Mask defect detection apparatus, mask defect detection system, and lithography system

Abstract

The application relates to a mask defect detection device, a mask defect detection system and a photolithography machine system, wherein the mask defect detection device comprises: a shell, the inside of the shell being provided with a vacuum cavity; a mask arranged in the vacuum cavity; a plane mirror arranged in the vacuum cavity and located at one side of the mask, the plane mirror being used for reflecting an extreme ultraviolet light beam and vertically irradiating the extreme ultraviolet light beam on the mask; a de-coherence reflection assembly arranged in the vacuum cavity, the de-coherence reflection assembly being used for reflecting the extreme ultraviolet light beam entering the vacuum cavity to the plane mirror after de-coherence; an imaging device, the imaging device being provided with an imaging plane; and a reflected light collecting device used for collecting the extreme ultraviolet light beam reflected by defects on the mask and outputting the extreme ultraviolet light beam to the imaging plane, so that bright spots are generated on the imaging plane. The mask defect detection device provided by the application can adopt the extreme ultraviolet light generated by a new type of particle accelerator EUV light source and having high output power, and the yield of mask defect detection is improved.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of semiconductor lithography technology, and in particular to a mask defect detection device, a mask defect detection system and a lithography machine system. BACKGROUND

[0002] The background provided in this section is merely for the purpose of enhancing the understanding of the present disclosure, and does not have to be the prior art.

[0003] EUV (Extreme Ultra-violet) lithography is the most promising technology to meet the 7nm and below technology nodes. In the semiconductor manufacturing process, extreme ultraviolet mask technology is considered to be one of the most critical technologies for the successful implementation and development of EUV lithography technology. Since extreme ultraviolet light is strongly absorbed by most materials, reflective optical elements must be used in the optical path, including the mask. Therefore, unlike traditional photomask, EUV mask adopts a multilayer film structure. The EUV mask preparation process is very complex, and each process step will inevitably introduce defects, and the defects on the EUV mask directly affect the yield of the lithography process and must be strictly controlled. Today, EUV mask defects are one of the main challenges related to EUV mask preparation. Therefore, EUV mask defect detection technology has become a core key technology for defect-free EUV mask preparation and EUV lithography production.

[0004] In related technologies, a light beam is reflected vertically to the mask through a mirror, and when the light beam is irradiated on the defect, the scattering light angle generated by the defect is large, part of the scattering light will not be blocked by the mirror and can be collected by the Schwarzschild objective to obtain the light beam reflected by the defect, thereby obtaining the defect information. However, the existing technical solutions adopt a discharge produced plasma (DPP) EUV light source or a laser produced plasma (LPP) EUV light source, and the power of the DPP and LPP light sources is relatively low, which to some extent affects the yield of mask defect detection, and the extreme ultraviolet light generated by the new type of particle accelerator EUV light source is coherent light, which will produce speckle in the imaging plane, affecting the imaging quality. SUMMARY

[0005] The purpose of the present application is to at least solve the problem that the extreme ultraviolet light with coherence will produce speckle in the imaging plane, affecting the imaging quality. The purpose is achieved by the following technical solutions:

[0006] The first aspect of the present application provides a mask defect detection device, which comprises: a shell, the shell has a vacuum cavity inside, a mask to be detected is arranged in the vacuum cavity, and the shell is provided with a shooting entrance and a shooting exit through which an extreme ultraviolet light beam passes; a plane mirror is arranged in the vacuum cavity and located on one side of the mask, and the plane mirror is used for reflecting the extreme ultraviolet light beam and vertically irradiating the extreme ultraviolet light beam on the mask; a de-coherence reflection assembly is arranged in the vacuum cavity and corresponds to the shooting entrance, and the de-coherence reflection assembly is used for reflecting the extreme ultraviolet light beam entering the vacuum cavity to the plane mirror after de-coherence; an imaging device is arranged on the shooting exit, and the imaging device has an imaging plane; and a reflected light collecting device is arranged on the side of the plane mirror away from the mask, and the reflected light collecting device is used for collecting the extreme ultraviolet light beam reflected by the defects on the mask and outputting the extreme ultraviolet light beam to the imaging plane to generate bright spots on the imaging plane.

[0007] According to the mask defect detection device provided by the present application, the extreme ultraviolet light propagates in a vacuum environment through the vacuum cavity, so that the loss of the extreme ultraviolet light caused by air absorption during the propagation of the extreme ultraviolet light in the mask defect detection device is reduced. In addition, the de-coherence reflection assembly is arranged to perform de-coherence processing on the extreme ultraviolet light beam with coherence, so that speckles are avoided on the imaging plane, and the imaging quality is improved. The mask defect detection device provided by the present application can use the extreme ultraviolet light with coherence generated by a new type of particle accelerator EUV light source for defect detection, the extreme ultraviolet wave band has a high output power, and the yield of mask defect detection is improved.

[0008] In addition, the mask defect detection device according to the present application can have the following additional technical features:

[0009] In some embodiments of the present application, the de-coherence reflection assembly comprises at least one de-coherence mirror, the de-coherence mirror comprises a plurality of sub-mirrors, the directions of the sub-mirrors are consistent, the extreme ultraviolet light beam is reflected by the plurality of sub-mirrors to form a plurality of sub-beams, and the optical path difference between any two adjacent sub-beams is greater than the coherence length.

[0010] In some embodiments of the present application, the plurality of sub-mirrors are distributed in a stepped manner along a preset direction.

[0011] In some embodiments of the present application, the mirror types of the plurality of sub-mirrors are at least one of a plane, a concave spherical surface, an irregular shape and a micro-electro-mechanical deformable mirror.

[0012] In some embodiments of the present application, the reflected light collecting device is a Schwarzschild lens, and the imaging device is a visible light wave band CCD camera or an EUV wave band CCD camera based on a scintillator.

[0013] In some embodiments of the present application, the mask defect detection device further comprises a driving device arranged in the vacuum cavity, the driving device being configured to carry the mask and drive the mask to move on a preset plane, the preset plane being perpendicular to the EUV light beam reflected by the plane mirror; and a vibration isolation platform configured to carry the shell.

[0014] In some embodiments of the present application, the mask defect detection device further comprises a light beam propagation pipeline in communication with the entrance, the light beam propagation pipeline being configured to propagate the EUV light beam; a light beam shaping device arranged on the light beam propagation pipeline, the light beam shaping device being configured to shape the diameter of the EUV light beam to a preset size; a four-jaw slit device arranged on the light beam propagation pipeline between the entrance and the light beam shaping device, the four-jaw slit device being configured to finely adjust the diameter of the EUV light beam passing therethrough; and a flange arranged on the light beam propagation pipeline between the four-jaw slit device and the light beam shaping device.

[0015] In some embodiments of the present application, the preset size ranges from 100 to 1000 um.

[0016] The second aspect of the present application provides a mask defect detection system, the mask defect detection system comprising: a plurality of mask defect detection devices according to the first aspect of the present application; an EUV light emitting device, the EUV light emitting device being provided with a light beam output pipeline, the EUV light emitting device outputting an EUV light beam through the light beam output pipeline; and a light splitting device, one end of the light splitting device being in communication with the light beam output pipeline, and the other end of the light splitting device being provided with a plurality of sub-light beam output pipelines, each light beam propagation pipeline of each mask defect detection device being in communication with one sub-light beam output pipeline, the light splitting device being configured to split the EUV light beam output by the EUV light emitting device and deliver the EUV light beam to each mask defect detection device.

[0017] The mask defect detection system according to the present application can simultaneously meet the EUV light beam irradiation requirements of multiple mask defect detection devices through one EUV light emitting device, the EUV light emitting device simultaneously outputting EUV light beams through multiple beam lines to serve more mask defect detection devices, thereby greatly reducing the average cost of the entire device, and the simultaneous operation of multiple mask defect detection devices can greatly improve the yield of mask defect detection, thereby meeting the mass production requirements of mask defect detection at present and in the future.

[0018] In some embodiments of the present application, the EUV light emitting device is a steady-state micro-bunch EUV light source or a free electron laser EUV light source.

[0019] The third aspect of the present application provides a photolithography system, which comprises the mask defect detection system according to the second aspect of the present application; a plurality of photolithography machines, each of which is in communication with one of the sub-beam output channels of the mask defect detection system, and the extreme ultraviolet light emitting device of the mask defect detection system supplies extreme ultraviolet light beams to the photolithography machines through the light splitting device.

[0020] The photolithography system according to the present application can meet the requirements of extreme ultraviolet light beam irradiation for a plurality of mask defect detection devices and a plurality of photolithography machines at the same time through one extreme ultraviolet light emitting device, and can provide illumination light sources for the mask defect detection devices or the photolithography machines, thereby greatly reducing the use cost of the extreme ultraviolet light emitting device, and greatly improving the yield of the photolithography machines when a plurality of photolithography machines are used at the same time. The scheme can finally realize the improvement of the yield of mask defect detection and the yield of chip manufacturing by several times, and greatly reduce the average cost of the device. BRIEF DESCRIPTION OF DRAWINGS

[0021] Various other advantages and benefits will become apparent to those of ordinary skill in the art upon reading the following detailed description of the preferred embodiments. The detailed description is made with reference to the accompanying drawings.

[0022] Figure 1 is a structural schematic diagram of a mask defect detection device according to an exemplary embodiment of the present application;

[0023] Figure 2 is a structural schematic diagram of a de-coherence mirror according to an exemplary embodiment of the present application;

[0024] Figure 3 is a structural schematic diagram of a de-coherence mirror according to an exemplary embodiment of the present application;

[0025] Figure 4 is a schematic diagram of a mask defect detection system according to an exemplary embodiment of the present application;

[0026] Figure 5 is a schematic diagram of a photolithography system according to an exemplary embodiment of the present application;

[0027] Figure 6 is a structural schematic diagram of a mask defect detection device according to an exemplary embodiment of the present application.

[0028] The reference signs are as follows:

[0029] 10 - housing, 11 - vacuum chamber, 12 - entrance aperture, 13 - exit aperture, 20 - plane mirror, 30 - de-coherence mirror assembly, 31 - de-coherence mirror, 311 - sub-mirror, 32 - plane mirror, 40 - imaging device, 50 - reflected light collection device, 61 - vibration isolation stage, 62 - drive device, 70 - beam propagation conduit, 71 - beam shaping device, 72 - flange, 73 - four-jaw slit device, 80 - extreme ultraviolet light emitting device, 81 - beam output conduit, 90 - light splitting device, 91 - sub-beam output conduit, 100 - mask defect detection device, 200 - mask, 300 - lithography machine. DETAILED DESCRIPTION

[0030] Example embodiments of the present disclosure will be described more fully hereinafter with reference to the accompanying drawings. While example embodiments of the present disclosure are shown in the drawings, it is understood that the present disclosure can be embodied in various forms and should not be limited by the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the present disclosure to those skilled in the art.

[0031] It is to be understood that the terminology used herein is for the purpose of describing particular example embodiments only and is not intended to be limiting. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. The terms "comprises", "comprising", "includes", "including" and "has" are inclusive and therefore specify the presence of stated features, steps, operations, elements, and / or components, but do not preclude the presence or addition of one or more other features, steps, operations, elements, components, and / or groups thereof. The method steps, processes, and operations described herein are not to be construed as necessarily requiring their performance in the particular order in which they are described, unless specifically identified as an order dependent step. It is also to be understood that additional or alternative steps can be employed.

[0032] Although the terms first, second, third, and the like can be used herein to describe various elements, components, regions, layers and / or sections, these elements, components, regions, layers and / or sections should not be limited by these terms. These terms can be only used to distinguish one element, component, region, layer or section from another region, layer or section. Terms such as "first", "second", and other numerical terms when used herein do not imply a sequence or order unless clearly indicated by the context. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the example embodiments.

[0033] For purposes of the description hereinafter, spatial or directional terms, such as, for example, "inner," "outer," "upper," "lower," "above," "below," "up," "down," "vertical," "horizontal," "left," "right," "front," "rear," "rearward," "forward," "top," "bottom," "under," "above," "on," "side" and the like, can be used where appropriate to describe the various embodiments. These spatial or directional terms are not to be interpreted as limiting the scope of the various embodiments to only a particular spatial or directional arrangement of the various components. Rather, these spatial or directional terms are to be interpreted in the context based on the particular application in which the embodiments are utilized. For example, if the various embodiments are utilized in the context of a device that is flipped over, then a component described as "below" or "under" another component would actually be oriented "above" or "over" the other component. Thus, the example term "below" can encompass both an up and a down orientation. The components can be oriented in other directions (rotated 90 degrees or otherwise) and the spatially relative descriptions used herein interpreted accordingly.

[0034] As Figure 1As shown, according to the embodiment of the present application, a mask defect detection device is provided, comprising: a housing 10, a plane mirror 20, a de-coherence reflection assembly 30, a reflected light collecting device 50 and an imaging device 40. Specifically, the housing 10 has a vacuum cavity 11 inside, which provides a vacuum environment for the propagation of extreme ultraviolet light. The vacuum degree of the vacuum cavity 11 is less than 10-6 hPa, so as to reduce the loss of the extreme ultraviolet light due to air absorption during the propagation of the extreme ultraviolet light in the mask defect detection device. The housing 10 is provided with a shooting entrance 12 for the extreme ultraviolet light beam to enter the vacuum cavity 11 and a shooting exit 13 for the extreme ultraviolet light beam to exit the vacuum cavity 11. A mask 200 is arranged in the vacuum cavity 11. The plane mirror 20 is arranged in the vacuum cavity 11 and located at one side of the mask 200. The plane mirror 20 is at a certain angle with the mask 200, so that the extreme ultraviolet light beam reflected by the plane mirror 20 is vertically irradiated on the mask 200. The de-coherence reflection assembly 30 is arranged in the vacuum cavity 11 corresponding to the shooting entrance 12. The reflected light collecting device 50 is arranged at the side of the mirror away from the mask 200. The imaging device 40 is arranged on the shooting exit 13 and has an imaging plane. The extreme ultraviolet light beam entering the vacuum cavity 11 from the shooting entrance 12 is first irradiated into the de-coherence reflection assembly 30. The de-coherence reflection assembly 30 reflects the extreme ultraviolet light beam entering the vacuum cavity 11 after de-coherence to the plane mirror 20. The plane mirror 20 reflects the extreme ultraviolet light beam to the mask 200 again. When there is no defect on the mask 200, since the extreme ultraviolet light beam is vertically irradiated on the mask 200, the extreme ultraviolet light beam reflected by the mask 200 is all blocked by the plane mirror 20. At this time, the imaging plane of the imaging device 40 does not generate a bright spot. When there is a defect on the mask 200, the extreme ultraviolet light beam irradiated to the defect is reflected from the defect site at multiple different angles. Part of the reflected light can be collected by the reflected light collecting device 50 and output to the imaging plane of the imaging device 40, so as to generate a bright spot on the imaging plane, thereby detecting whether the mask 200 has a defect.

[0035] The coherent extreme ultraviolet light beam is de-cohered by the de-coherence reflection assembly 30, so that speckle is avoided in the imaging plane, and the imaging quality is improved. In the embodiment, the extreme ultraviolet light generated by a new type of particle accelerator EUV light source (for example, a "steady-state micro-bunching" (SSMB) EUV light source, a free electron laser (FEL) EUV light source) is used for defect detection. The extreme ultraviolet light has a high output power in the extreme ultraviolet band, and the yield of mask defect detection is improved. In the embodiment, the reflection light collecting device 50 is a Schwarzschild lens. The imaging device 40 is a visible light band CCD camera based on a scintillator. Since the cost of the visible light band CCD camera is lower than that of the EUV band CCD camera, the cost of the mask defect detection device is reduced. In other examples, the mask defect detection device provided by the present application can also use the light beam generated by a DPP light source or an LPP light source. In this case, the imaging device 40 is an EUV band CCD camera.

[0036] It should be noted that the defect information carried by the scattered light reflected by the defects of the mask is received by the CCD camera. The scattered light intensity at the defects is greater than the background scattered light intensity at the non-defect positions. Therefore, a bright spot is obtained after CCD imaging. The intensity of the bright spot is related to the size and type of the defect, so that the information of the mask defect can be extracted by an image processing algorithm.

[0037] In some embodiments of the present application, as shown in Figure 1 and Figure 2 The de-coherence reflection assembly 30 includes at least one de-coherence reflection mirror 31. The mirror surface of the de-coherence reflection mirror 31 includes a plurality of sub-mirror surfaces 311. The orientations of the sub-mirror surfaces 311 are consistent. The extreme ultraviolet light beam is reflected by the plurality of sub-mirror surfaces 311 to form a plurality of sub-beams with the same propagation direction. The optical path difference between any two adjacent sub-beams is greater than the coherence length, so that the de-coherence purpose is achieved. After the plurality of sub-beams are reflected by the plane mirror 20, the reflected light (i.e., the plurality of sub-beams) does not have the original high coherence, so that speckle is not caused in the imaging plane, and the imaging resolution of the system is not affected.

[0038] In one example embodiment, the de-coherence reflection assembly 30 includes one de-coherence reflection mirror 31. The extreme ultraviolet light beam is reflected by the de-coherence reflection mirror 31 to the plane mirror 20.

[0039] In another example embodiment, as shown in Figure 1 The de-coherence reflection assembly 30 includes one de-coherence reflection mirror 31 and one plane mirror 32. The de-coherence reflection mirror 31 and the plane mirror 32 are arranged in parallel. The extreme ultraviolet light beam is reflected by the de-coherence reflection mirror 31 to the plane mirror 32, and then reflected by the plane mirror 32 to the plane mirror 20.

[0040] In another example embodiment, as shown inFigure 6 As shown in the figure, the decoherence reflection assembly 30 includes two decoherence mirrors 31, which are arranged in parallel, and the extreme ultraviolet light beam is irradiated to the plane mirror 20 after two reflections of the two decoherence mirrors 31, and the two decoherence mirrors 31 further decohere the illumination light.

[0041] In some embodiments of the present application, as Figure 2 As shown in the figure, among the plurality of sub-mirrors 311 of the decoherence mirror 31, the plurality of sub-mirrors 311 are distributed in a stepped manner along a preset direction. Specifically, the preset direction is parallel to the direction of propagation of the extreme ultraviolet light beam, so that each sub-mirror 311 is spaced apart by a certain distance along the direction of propagation of the extreme ultraviolet light beam. When the extreme ultraviolet light beam is irradiated to the decoherence mirror 31, there is also a gap between each sub-beam reflected by the sub-mirror 311, so that the optical path difference between any two adjacent sub-beams is greater than the coherence length, thereby achieving decoherence.

[0042] In one exemplary embodiment, as Figure 2 As shown in the figure, the mirror surface of the sub-mirror 311 is a plane, each sub-mirror 311 is parallel to each other, the plurality of sub-mirrors 311 are periodically distributed in a stepped manner, and the distance between each sub-mirror 311 along the direction of propagation of the extreme ultraviolet light beam is equal. In this embodiment, the sub-mirror 311 only changes the direction of the light path without changing the spot size, and the extreme ultraviolet light beam irradiated to the decoherence mirror 31 reflects a plurality of parallel sub-beams.

[0043] In another exemplary embodiment, as Figure 3 As shown in the figure, the mirror surface of the sub-mirror 311 is a concave spherical surface with focusing effect, each sub-mirror 311 has the same size, and each sub-mirror 311 is connected in sequence. In this embodiment, the sub-mirror 311 changes the direction of the light path while also having a focusing effect, so that the extreme ultraviolet light beam irradiated to the decoherence mirror 31 reflects a plurality of focused sub-beams.

[0044] In other embodiments, the mirror surface of the sub-mirror is irregularly shaped, or the sub-mirror is a small-sized micro-electro-mechanical deformable mirror (MEMS mirror), and a plurality of micro-electro-mechanical deformable mirrors form a mirror array to divide the incident extreme ultraviolet light beam into a plurality of sub-beams, so that the optical path difference between adjacent sub-beams is greater than the coherence length, thereby achieving decoherence.

[0045] In some embodiments of the present application, as Figure 1 and Figure 6As shown, the mask defect detection device further comprises a driving device 62 and a vibration isolation platform 61. The driving device 62 is a five-dimensional moving table for carrying the mask 200 and driving the mask 200 to move on a preset plane, wherein the preset plane is perpendicular to the extreme ultraviolet light beam reflected by the plane mirror 20, so as to realize defect scanning of the whole mask 200, and the mask 200 can also be focused and leveled. The vibration requirement of the system for the mask defect detection device is very strict, and therefore the whole device needs to be vibration-isolated, and the shell 10 is placed on the vibration isolation platform 61, so as to reduce the vibration amplitude of the mask defect detection device. In the embodiment, the mask 200 is horizontally placed, and the preset plane is a horizontal plane, and the vibration isolation platform 61 needs to provide 90% vibration isolation at 2 Hz.

[0046] In some embodiments of the present application, as Figure 1 As shown, the mask defect detection device further comprises a light beam propagation pipe 70, a light beam shaping device 71, a four-jaw slit device 73 and a flange 72. The light beam shaping device 71, the flange 72 and the four-jaw slit device 73 are sequentially arranged on the light beam propagation pipe 70 along the direction in which the extreme ultraviolet light beam propagates. The light beam propagation pipe 70 is in communication with the entrance 12, and the light beam propagation pipe 70 is used for the propagation of the extreme ultraviolet light beam. The extreme ultraviolet light propagates from the light beam propagation pipe 70 to the vacuum cavity 11. The light beam shaping device 71 is used for shaping the cross section of the extreme ultraviolet light beam to a preset size. The extreme ultraviolet light output by the new particle accelerator EUV light source forms an illumination spot of a required size after passing through the light beam shaping device 71. The light beam shaping device 71 can adopt a KB (Kirkpatrick-Baez) mirror. The cross section size (i.e. the illumination spot size) of the shaped extreme ultraviolet light beam is 100-1000 um. A larger spot size can faster complete the scanning of the whole mask 200, so as to improve the yield of mask defect detection. The flange 72 is used for quickly mounting or dismounting the light beam shaping device 71, so as to switch different specifications of the light beam shaping device 71 according to different illumination spot size requirements. The four-jaw slit device 73 is arranged on the light beam propagation pipe 70 close to the entrance 12. The shaped extreme ultraviolet light beam enters the vacuum cavity 11 of the mask defect detection device through the flange and the four-jaw slit device. The knife edge of the four-jaw slit device can move in two-dimensional directions, and is used for fine tuning the size of the shaped illumination spot (i.e. the cross section of the extreme ultraviolet light beam), so as to select a suitable spot size for different application scenarios. The illumination spot irradiates the de-coherence mirror 31 with a required spot size after passing through the four-jaw slit device.

[0047] According to the embodiments of the present application, as Figure 4As shown, a mask defect detection system is provided, which comprises a plurality of mask defect detection devices 100, an extreme ultraviolet light emitting device 80, and a beam splitting device 90. The extreme ultraviolet light emitting device 80 is provided with a light beam output channel 81, and the extreme ultraviolet light emitting device 80 outputs an extreme ultraviolet light beam through the light beam output channel 81. One end of the beam splitting device 90 is connected to the light beam output channel 81, and the other end is provided with a plurality of sub-beam output channels 91. Each sub-beam output channel 91 is in communication with a light beam propagation channel 70 of one mask defect detection device 100. The beam splitting device 90 splits the extreme ultraviolet light beam output by the extreme ultraviolet light emitting device 80 and transmits the extreme ultraviolet light beam to each mask defect detection device through the sub-beam output channel 91 and the light beam propagation channel 70. Thus, the extreme ultraviolet light emitting device 80 can simultaneously meet the extreme ultraviolet light beam irradiation requirements of a plurality of mask defect detection devices. The extreme ultraviolet light emitting device 80 simultaneously outputs extreme ultraviolet light beams through a plurality of beam lines to serve more mask defect detection devices, greatly reduce the average cost of the entire device, and greatly improve the yield of mask defect detection when a plurality of mask defect detection devices work simultaneously, thereby meeting the mass production requirements of mask defect detection at present and in the future.

[0048] In this embodiment, the extreme ultraviolet light emitting device 80 includes but is not limited to a steady-state microbunching EUV light source or a free-electron laser EUV light source. Specifically, the extreme ultraviolet light output by a steady-state microbunching (SSMB) EUV light source, a free-electron laser (FEL) EUV light source, etc. has very high power and brightness, which is much higher than that of extreme ultraviolet light output by a DPP, LPP, HHG, etc. High-brightness extreme ultraviolet light can improve the signal-to-noise ratio of the system, thereby greatly improving the defect detection rate of the system while obtaining higher resolution. The new particle accelerator light source "steady-state microbunching" and the free-electron laser can achieve very high monochromaticity under the premise of ensuring high power and high brightness. High monochromaticity can effectively avoid the influence of chromatic aberration of the imaging system on the imaging resolution, so that the imaging resolution of the CCD camera is higher. In this embodiment, each extreme ultraviolet light beam of the new particle accelerator EUV light source can be split according to the actual output power, and enough power of the illumination light source is provided for a plurality of mask defect detection devices,

[0049] According to the embodiment of the present application, a photolithography machine system is provided, which comprises a mask defect detection device 100, an extreme ultraviolet light emitting device 80, and a beam splitting device 90. Figure 5As shown, the lithography system comprises: a mask defect detection system, a plurality of lithography machines 300, each of which is in communication with one of the sub-beam output channels of the mask defect detection system, and an extreme ultraviolet light emitting device 80 in the mask defect detection system supplies an extreme ultraviolet light beam to the lithography machine 300 through a beam splitter 90. According to the lithography system provided by the present application, one extreme ultraviolet light emitting device 80 can simultaneously meet the extreme ultraviolet light beam irradiation requirements of a plurality of mask defect detection devices and a plurality of lithography machines 300, and at the same time, provide an illumination light source for the mask defect detection device or the lithography machine 300, thereby greatly reducing the use cost of the extreme ultraviolet light emitting device 80, and the simultaneous use of a plurality of lithography machines 300 can greatly improve the yield of the lithography machine 300. Ultimately, the scheme can achieve a number of times improvement in the mask defect detection yield and the chip manufacturing yield while greatly reducing the average cost of the device.

[0050] The above merely describes the preferred embodiments of the present application, but the protection scope of the present application is not limited thereto, and any person skilled in the art can easily think of changes or replacements within the technical range disclosed by the present application, which should be covered within the protection scope of the present application. Therefore, the protection scope of the present application should be subject to the protection scope of the claims.

Claims

1. A mask defect detection apparatus characterized by comprising: The mask defect detection device comprises: a housing, which has a vacuum cavity inside, a mask to be detected is arranged in the vacuum cavity, and the housing is provided with a shooting entrance and a shooting exit through which an extreme ultraviolet light beam passes; a plane mirror, which is arranged in the vacuum cavity and located on one side of the mask, and is used for reflecting the extreme ultraviolet light beam and vertically irradiating the extreme ultraviolet light beam on the mask; a de-coherence reflection assembly, which corresponds to the shooting entrance and is arranged in the vacuum cavity, and is used for reflecting the extreme ultraviolet light beam entering the vacuum cavity to the plane mirror after de-coherence; an imaging device, which is arranged on the shooting exit, and has an imaging plane; a reflected light collecting device, which is arranged on the side of the plane mirror away from the mask, and is used for collecting the extreme ultraviolet light beam reflected by the defect on the mask and outputting the extreme ultraviolet light beam to the imaging plane to generate a bright spot on the imaging plane; the de-coherence reflection assembly comprises: at least one de-coherence mirror, which comprises a plurality of sub-mirrors, the directions of the sub-mirrors are consistent, the extreme ultraviolet light beam is reflected by the plurality of sub-mirrors to generate a plurality of sub-beams, and the optical path difference between any two adjacent sub-beams is greater than the coherence length; the plurality of sub-mirrors are distributed in a stepped manner along a preset direction, the preset direction is parallel to the direction in which the extreme ultraviolet light beam propagates, and the sub-mirrors are arranged in an inclined manner with respect to the preset direction; the mirror types of the plurality of sub-mirrors are at least one of a plane, a concave spherical surface, an irregular shape and a micro-electro-mechanical deformable mirror; the distances between the sub-mirrors along the direction in which the extreme ultraviolet light beam propagates are equal.

2. The mask defect detection device according to claim 1, wherein: the reflected light collecting device is a Schwarzschild lens; the imaging device is a visible light band CCD camera based on a scintillator or an EUV band CCD camera.

3. The apparatus according to claim 1, wherein The mask defect detection device further comprises: a driving device, which is arranged in the vacuum cavity, is used for carrying the mask, and can drive the mask to move on a preset plane, the preset plane is perpendicular to the extreme ultraviolet light beam reflected by the plane mirror; a vibration isolation platform, which is used for carrying the housing.

4. The apparatus according to claim 1, wherein The mask defect detection device further comprises: a light beam propagation pipeline, which communicates with the shooting entrance, and is used for the propagation of the extreme ultraviolet light beam; a light beam shaping device, which is arranged on the light beam propagation pipeline, and is used for shaping the diameter of the extreme ultraviolet light beam to a preset size; a four-jaw slit device, which is arranged on the light beam propagation pipeline between the shooting entrance and the light beam shaping device, and is used for finely adjusting the diameter of the extreme ultraviolet light beam passing through the four-jaw slit device; a flange, which is arranged on the light beam propagation pipeline between the four-jaw slit device and the light beam shaping device.

5. The mask defect detection device according to claim 4, wherein: the preset size is in a range of 100-1000 um.

6. A system for mask defect detection, the system comprising: The mask defect detection system comprises: a plurality of mask defect detection devices according to any one of claims 1 to 5. An extreme ultraviolet light emitting device is provided with a light beam output conduit through which an extreme ultraviolet light beam is output; A beam splitting device is provided with one end in communication with the light beam output conduit and a plurality of sub-beam output conduits at the other end, each of the mask defect detection devices having a light beam propagation conduit in communication with one of the sub-beam output conduits, the beam splitting device being configured to split the extreme ultraviolet light beam output by the extreme ultraviolet light emitting device and to deliver the split light beams to each of the mask defect detection devices.

7. The mask defect detection system of claim 6, wherein: The extreme ultraviolet light emitting device is a steady-state micro-bunch EUV light source or a free electron laser EUV light source.

8. A lithographic system, characterized by, The lithography system includes: The mask defect detection system of claim 6; A plurality of lithography machines, each of the lithography machines being in communication with one of the sub-beam output conduits, the extreme ultraviolet light emitting device of the mask defect detection system being configured to supply extreme ultraviolet light beams to the lithography machines via the beam splitting device.

Images