Support unit and substrate processing apparatus including the same

Abstract

A substrate support unit includes a chuck to support and rotate a substrate, and a lamp unit disposed below the substrate to heat the substrate, wherein the lamp unit includes a first lamp having a reflective layer on a surface thereof to block and / or reflect light emitted from the first lamp but not directed to the substrate to direct the light to the substrate.

Description

Technical Field

[0001] The embodiments of the inventive concept described herein relate to a support unit and a substrate processing apparatus including the support unit, and more specifically, to a support unit for performing a process while heating a substrate during a substrate processing process and a substrate processing apparatus including the support unit. Background Technology

[0002] Typically, various processes, such as photoresist coating, development, etching, and ashing, are performed to manufacture semiconductor devices or flat panel displays. In each process, cleaning processes using chemicals or deionized water are performed to remove various contaminants adhering to the substrate, and drying processes are performed to dry any remaining chemicals or deionized water on the substrate surface.

[0003] Recently, etching processes using high-temperature chemicals such as sulfuric acid and phosphoric acid to selectively remove silicon nitride and silicon oxide films have been implemented. In substrate processing apparatuses using high-temperature chemicals, the substrate processing apparatus for heating the substrate is used to increase the etching rate. U.S. Patent Application Publication No. 2016-0013079 discloses an embodiment of the aforementioned substrate processing apparatus. According to the patent, the substrate processing apparatus includes a lamp for heating the substrate in a rotating head and a reflector for reflecting the heat radiated by the lamp.

[0004] However, since the heat source in the form of a lamp emits heat in all directions, it emits heat waves of the same intensity in all directions. When using this patented device to process a substrate, a large amount of energy is wasted due to the omnidirectional nature of the lamp's heat waves.

[0005] In addition, the problem is that the heat emitted by the non-guided substrate of the lamp may heat adjacent components, thereby damaging and / or deforming them.

[0006] Furthermore, when all components adjacent to the lamp are made of heat-resistant materials to prevent damage and / or deformation, the material cost is very high, and even in this case, it is difficult to guarantee long-term reliability. Summary of the Invention

[0007] The present invention provides a support unit that can improve substrate processing efficiency and a substrate processing apparatus including the support unit.

[0008] The present invention provides a support unit that can improve the efficiency of a lamp and a substrate processing apparatus including the support unit.

[0009] Embodiments of the present invention provide a support unit capable of improving the thermal stability of components adjacent to or near a lamp, and a substrate processing apparatus including the support unit.

[0010] The purpose of this invention is not limited thereto, and other purposes not mentioned will be clearly understood by those skilled in the art from the following description.

[0011] The technical objectives of this invention are not limited to those described above. Other unmentioned technical objectives will be apparent to those skilled in the art from the following description.

[0012] The present invention provides a substrate support unit for supporting a substrate.

[0013] The substrate support unit includes a chuck that supports and rotates the substrate; and a lamp unit disposed below the substrate to heat the substrate, wherein the lamp unit includes a first lamp having a reflective layer on its surface to block and / or reflect light emitted from the first lamp but not directed to the substrate in order to direct the light to the substrate.

[0014] In one embodiment, when viewed in a vertical cross-section, the first end of the reflective layer is located on the first path of light emitted from the first lamp to the end of the substrate.

[0015] In one embodiment, the support unit further includes a reflector with protrusions that reflect light emitted from the first lamp to an edge region of the substrate, and a second end of the reflective layer is located on a second path of light emitted from the first lamp to the edge region of the reflector.

[0016] In one embodiment, the support unit further includes a reflector having protrusions that reflect light emitted from the first lamp to an edge region of the substrate, and the reflective layer is disposed on a surface of the first lamp opposite to the surface facing the protrusions.

[0017] In one embodiment, the reflective layer is disposed at a location that blocks light emitted from the first lamp but not directly directed to the substrate.

[0018] In one embodiment, the reflective layer is disposed at a location that blocks light reflected by the reflector and / or emitted from the first lamp but not directly directed to the substrate.

[0019] In one embodiment, the first lamp is configured as a ring, the lamp unit further includes one or more second lamps located inside the first lamp, and the reflective layer is disposed only at the first lamp among the first lamp and the second lamp.

[0020] The present invention provides a substrate processing apparatus.

[0021] The substrate processing apparatus includes: a bowl-shaped portion having an internal processing space; a support unit supporting a substrate within the processing space; a liquid supply unit supplying processing liquid to the substrate supported by the support unit, wherein the support unit includes: a chuck supporting and rotating the substrate; a heating unit heating the substrate supported by the chuck; the heating unit including a first lamp located below the substrate, the first lamp heating the substrate supported by the chuck, and having a reflective layer disposed on a portion of its surface to block and / or reflect light emitted from the first lamp but not directed to the substrate, so as to direct the light to the substrate.

[0022] In one embodiment, the first lamp is configured as an annular shape, the heating unit is configured as an annular shape and includes one or more second lamps located inside the first lamp, and the reflective layer is disposed only at the first lamp among the first lamp and the second lamps.

[0023] In one embodiment, the chuck includes a chuck stage and a transmission plate, the chuck stage and the transmission plate together defining an internal space, the transmission plate being adjacent to the substrate and transmitting light emitted from the heating unit to the substrate, and the lamp being disposed in the internal space of the chuck.

[0024] In one embodiment, a retaining pin may be provided that protrudes upward from the chuck table during processing and supports the edge of the substrate.

[0025] In one embodiment, the heating unit is configured not to rotate when the chuck rotates.

[0026] In one embodiment, the reflective layer is located such that, in the vertical cross-section viewed in the up / down direction, the first end of the reflective layer is located on a line passing through the center of the first lamp and the contact point between the retaining pin and the substrate supported by the retaining pin.

[0027] In one embodiment, the support unit further includes a reflector having protrusions that reflect light emitted from the first lamp to the edge region of the substrate, and the reflective layer is disposed on the surface of the first lamp that does not face the protrusions.

[0028] In one embodiment, the protrusion is positioned between the first lamp located at the outermost edge of the lamp and the second lamp adjacent to the first lamp.

[0029] In one embodiment, at least some of the protrusions include curved surfaces formed in a circular shape.

[0030] In one embodiment, the reflective layer is disposed on the surface of the first lamp opposite to the surface facing the protrusion.

[0031] The present invention provides a substrate processing apparatus.

[0032] The substrate processing apparatus includes: a bowl-shaped portion having an internal processing space; a support unit supporting a substrate within the processing space; a liquid supply unit supplying processing liquid to the substrate supported by the support unit, wherein the support unit includes: a chuck stage supporting and rotating the substrate; a heating unit heating the substrate supported by the chuck; and a transmission plate placed between the substrate supported by the support unit and the heating unit, transmitting light emitted from the heating unit, wherein the heating unit includes: a first lamp located between the chuck stage and the substrate supported by the chuck stage, configured as an annular shape, and having a reflective layer disposed on a portion of its surface; and one or more second lamps located inside the first lamp.

[0033] In one embodiment, the reflective layer is not disposed in the region of the surface of the first lamp that emits light directly toward the substrate.

[0034] In one embodiment, the substrate processing apparatus further includes a retaining pin located on the chuck stage and penetrating the transmissive plate, the retaining pin projecting upward from the transmissive plate during processing and supporting the edge of the substrate, and the reflective layer being positioned such that the first end of the reflective layer is located on a line passing through the center of the first lamp and the contact point between the retaining pin and the substrate supported by the retaining pin.

[0035] According to the concept of the present invention, substrate processing efficiency can be improved.

[0036] Furthermore, according to embodiments of the present invention, the efficiency of the lamp can be improved by returning energy from directions other than the guiding substrate to the substrate.

[0037] Furthermore, according to embodiments conceived in this invention, the thermal stability of peripheral components adjacent to the lamp can be improved by blocking energy directed in directions other than the substrate.

[0038] The effects of this invention are not limited to those described above; those skilled in the art will clearly understand any effects not mentioned based on this specification and the accompanying drawings. Attached Figure Description

[0039] The above and other objects and features will become apparent from the following description with reference to the following figures, wherein, unless otherwise stated, the same reference numerals refer to the same parts throughout the various figures, and wherein:

[0040] Figure 1 This is a schematic plan view illustrating a substrate processing apparatus equipped with a substrate processing device according to an embodiment of the present invention.

[0041] Figure 2 yes Figure 1 A plan view of the substrate processing apparatus;

[0042] Figure 3 yes Figure 1 A cross-sectional view of the substrate processing apparatus;

[0043] Figure 4 This is a cross-sectional view showing a support unit according to an embodiment of the concept of the present invention;

[0044] Figure 5 This is an enlarged view showing a portion of the support unit according to an embodiment of the concept of the present invention;

[0045] Figure 6 The figure illustrates the state of the heating unit heating substrate according to an embodiment of the present invention. Detailed Implementation

[0046] The inventive concept can be modified in various ways and can take many forms, and its specific embodiments will be shown and described in detail in the accompanying drawings. However, the embodiments of the inventive concept are not intended to limit the specific forms disclosed, and it should be understood that the inventive concept includes all variations, equivalents, and substitutions within the spirit and technical scope encompassed within it. In the description of the inventive concept, detailed descriptions of relevant known technologies may be omitted where the essence of the inventive concept may be unclear.

[0047] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the inventive concept. As used herein, the singular forms “a,” “an,” and “the” are also intended to include the plural forms, unless the context clearly indicates otherwise. It will be further understood that the terms “comprising” and / or “including”, when used in this specification, designate the presence of the stated features, integrals, steps, operations, elements, and / or components, but do not preclude the presence or addition of one or more other features, integrals, steps, operations, elements, components, and / or groups thereof. As used herein, the term “and / or” includes any and all combinations of one or more of the associated listed items. Furthermore, the term “exemplary” is intended to refer to an example or illustration.

[0048] It should be understood that although the terms "first," "second," "third," etc., may be used herein to describe various elements, components, regions, layers, and / or portions, these elements, components, regions, layers, and / or portions should not be limited by these terms. These terms are used only to distinguish one element, component, region, layer, or portion from another region, layer, or portion. Therefore, without departing from the teachings of the inventive concept, the first element, component, region, layer, or portion discussed below may be referred to as the second element, component, region, layer, or portion.

[0049] In the following text, reference will be made to Figures 1 to 6 The embodiments of the present invention will be described in detail.

[0050] Figure 1 This is a schematic plan view of a substrate processing apparatus equipped with a substrate processing device according to an embodiment of the present invention.

[0051] refer to Figure 1 The substrate processing apparatus 1 includes a transposition module 1000 and a processing module 2000. The transposition module 1000 includes a loading port 1200 and a transfer frame 1400. The loading port 1200, the transfer frame 1400, and the processing module 2000 are arranged in a row in sequence. In the following text, the arrangement direction of the loading port 1200, the transfer frame 1400, and the processing module 2000 is referred to as the first direction 12. Furthermore, the direction perpendicular to the first direction 12 when viewed from above is referred to as the second direction 14, and the direction perpendicular to the plane including the first direction 12 and the second direction 14 is referred to as the third direction 16.

[0052] A carrier 1300 for storing substrate W is mounted on loading port 1200. Multiple loading ports 1200 are provided, and they are arranged in a row along the second direction 14. Figure 1 The illustration shows four loading ports 1200. However, the number of loading ports 1200 can be increased or decreased depending on factors such as processing efficiency and the footprint of the processing module 2000. Grooves (not shown) for supporting the edges of the substrate W are formed in the carrier 1300. Multiple slots are provided in the carrier 1300 along a third direction 16. The substrate W is located within the carrier 1300 and is stacked vertically and horizontally, spaced apart from each other along the third direction 16. A front-opening standard box (FOUP) can be used as the carrier 1300.

[0053] The processing module 2000 includes a buffer unit 2200, a transfer chamber 2400, and a processing chamber 2600. The transfer chamber 2400 is configured such that its longitudinal direction is parallel to a first direction 12. Processing chambers 2600 are respectively arranged along a second direction 14 on one side and the other side of the transfer chamber 2400. The processing chambers 2600 located on one side and the processing chambers 2600 located on the other side of the transfer chamber 2400 are arranged symmetrically about the transfer chamber 2400. Multiple processing chambers 2600 are arranged along the length of the transfer chamber 2400. Furthermore, some processing chambers 2600 are stacked vertically on top of each other. That is, the processing chambers 2600 can be arranged in an A×B array (A and B are natural numbers 1 or greater) on one or both sides of the transfer chamber 2400. Here, A is the number of processing chambers 2600 arranged in rows along the first direction 12, and B is the number of processing chambers 2600 arranged in rows along a third direction 16. When four or six processing chambers 2600 are arranged on one side of the transmission chamber 2400, the processing chambers 2600 can be arranged in a 2×2 or 3×2 array. The number of processing chambers 2600 can be increased or decreased. The processing chambers 2600 can be arranged only on one side of the transmission chamber 2400. In addition, the processing chambers 2600 can be arranged in a single layer on one side and / or both sides of the transmission chamber 2400.

[0054] A buffer unit 2200 is disposed between the transfer frame 1400 and the transfer chamber 2400. The buffer unit 2200 provides space for holding the substrate W before transferring it between the transfer chamber 2400 and the transfer frame 1400. The buffer unit 2200 is provided with slots (not shown) for placing the substrate W, and a plurality of slots (not shown) are spaced apart along a third direction 16. Each of the surfaces of the buffer unit 2200 facing the transfer frame 1400 and facing the transfer chamber 2400 is open.

[0055] A transfer frame 1400 transfers substrate W between a carrier 1300 and a buffer unit 2200, both positioned on a loading port 1200. The transfer frame 1400 is provided with a transposition track 1420 and a transposition robot 1440. The transposition track 1420 is configured such that its longitudinal direction is parallel to a second direction 14. The transposition robot 1440 is mounted on the transposition track 1420 and moves linearly along the transposition track 1420 in the second direction 14. The transposition robot 1440 has a base 1441, a body 1442, and a transposition arm 1443. The base 1441 is mounted to be movable along the transposition track 1420. The body 1442 is coupled to the base 1441. The body 1442 is configured to be movable along a third direction 16 on the base 1441. Furthermore, the body 1442 is configured to be rotatable on the base 1441. The indexing arm 1443 is coupled to the body 1442 and configured to be movable back and forth relative to the body 1442. Multiple indexing arms 1443 are configured to be individually driven. The indexing arms 1443 are configured to be stacked vertically on top of each other at a distance from each other in a third direction 16. Some indexing arms 1443 are used to transfer the substrate W from the processing module 2000 to the carrier 1300, while others are used to transfer the substrate W from the carrier 1300 to the processing module 2000. This prevents particles generated from the substrate W before processing during the insertion and removal of the substrate by the indexing robot 1440 from adhering to the substrate W after processing.

[0056] The transfer chamber 2400 transfers substrate W between the buffer unit 2200 and the processing chamber 2600, and between the processing chambers 2600. The transfer chamber 2400 is provided with a guide rail 2420 and a main robot 2440. The guide rail 2420 is configured such that its length direction is parallel to a first direction 12. The main robot 2440 is mounted on the guide rail 2420 and moves linearly along the first direction 12 on the guide rail 2420. The main robot 2440 has a base 2441, a body 2442, and a main arm 2443. The base 2441 is mounted to be movable along the guide rail 2420. The body 2442 is coupled to the base 2441. The body 2442 is configured to be movable along a third direction 16 on the base 2441. Furthermore, the body 2442 is configured to be rotatable on the base 2441. The main arm 2443 is coupled to the body 2442 and is movable back and forth relative to the body 2442. Multiple main arms 2443 are configured to be driven individually. The main arms 2443 are stacked one on top of the other at a distance from each other on the third direction 16. The main arms 2443 used when transferring the substrate W from the buffer unit 2200 to the processing chamber 2600 and the main arms 2443 used when transferring the substrate W from the processing chamber 2600 to the buffer unit 2200 can be different from each other.

[0057] A substrate processing apparatus 10 for performing a cleaning process on substrate W is provided in processing chamber 2600. Depending on the type of cleaning process to be performed, the substrate processing apparatus 10 provided in each processing chamber 2600 may have different structures. Optionally, the substrate processing apparatus 10 in each processing chamber 2600 may have the same structure. Optionally, the processing chambers 2600 are divided into multiple groups, and the substrate processing apparatus 10 provided in processing chambers 2600 belonging to the same group may have the same structure, while the substrate processing apparatus 10 provided in processing chambers 2600 belonging to different groups may have different structures. For example, when the processing chambers 2600 are divided into two groups, the processing chambers 2600 of the first group may be provided on one side of the transfer chamber 2400, and the processing chambers 2600 of the second group may be provided on the other side of the transfer chamber 2400. Optionally, on one side and the other side of the transfer chamber 2400, the first group of processing chambers 2600 may be provided on the lower layer, and the second group of processing chambers 2600 may be provided on the upper layer, i.e., stacked on top of the first group of processing chambers 2600. The first group of treatment chambers 2600 and the second group of treatment chambers 2600 can be classified according to the type of chemicals used or the type of cleaning method.

[0058] In the following embodiments, an apparatus for cleaning substrate W using processing fluids such as high-temperature sulfuric acid, alkaline chemical liquids, acidic chemical liquids, rinsing liquids, and drying gases will be described as an example. However, the technical concept of the present invention is not limited thereto, and can be applied to various types of apparatuses that perform processes such as etching processes while rotating substrate W.

[0059] Figure 2 yes Figure 1 A plan view of the substrate processing apparatus. Figure 3 yes Figure 1 A cross-sectional view of the substrate processing apparatus.

[0060] refer to Figure 2 and Figure 3 The substrate processing apparatus 10 includes a chamber 100, a bowl-shaped portion 200, a support unit 300, a liquid supply unit 400, an exhaust unit 500, and a lifting / lowering unit 600.

[0061] Chamber 100 provides a sealed internal space. An airflow supply member 110 is mounted on top. The airflow supply member 110 forms a downward airflow inside chamber 100. The airflow supply member 110 filters high-humidity external air and supplies it into chamber 100. The high-humidity external air passes through the airflow supply member 110 and is supplied into chamber 100 to form a downward airflow. The downward airflow provides a uniform airflow to the top of substrate W, and contaminants generated during the process of treating the surface of substrate W with process fluid are discharged along with air to exhaust unit 500 through bowl-shaped portions 200 recovery containers 210, 220, and 230.

[0062] The interior space of chamber 100 is divided into a processing area 120 and a maintenance area 130 by a horizontal partition wall 102. The bowl-shaped section 200 and the support unit 300 are located in the processing area 120. Except for the recovery lines 241, 243, and 245 and the exhaust line 510 connected to the bowl-shaped section 200, the drive unit of the lifting / lowering unit 600, the drive unit of the liquid supply unit 400, and the supply lines are located in the maintenance area 130. The maintenance area 130 is isolated from the processing area 120.

[0063] The bowl-shaped portion 200 has a cylindrical shape with an open top and a processing space for processing the substrate W. The open top side of the bowl-shaped portion 200 is configured as a channel for taking out and feeding the substrate W. A support unit 300 is located in the processing space. The support unit 300 supports the substrate W while rotating the substrate W during the process.

[0064] The exhaust pipe 290 is connected to the lower end of the bowl-shaped portion 200, thereby performing forced exhaust at the bowl-shaped portion 200. In the bowl-shaped portion 200, the first recovery container 210, the second recovery container 220, and the third recovery container 230 for introducing and drawing in the processing liquid and gas scattered from the rotating substrate W are configured in multiple stages.

[0065] The annular first recycling container 210, second recycling container 220, and third recycling container 230 have an exhaust line H communicating with a common annular space. Specifically, each of the first to third recycling containers 210, 220, and 230 includes a bottom surface with an annular shape and cylindrical sidewalls extending upward from its bottom surface. The second recycling container 220 surrounds and is spaced apart from the first recycling container 210. The third recycling container 230 surrounds and is spaced apart from the second recycling container 220.

[0066] The first recovery container 210, the second recovery container 220, and the third recovery container 230 provide a first recovery space RS1, a second recovery space RS2, and a third recovery space RS3 for introducing an airflow containing processing liquid and fumes dispersed from the substrate W. The first recovery space RS1 is defined by the first recovery container 210, the second recovery space RS2 is defined by the space between the first recovery container 210 and the second recovery container 220, and the third recovery space RS3 is defined by the space between the second recovery container 220 and the third recovery container 230.

[0067] Each of the first recycling container 210, the second recycling container 220, and the third recycling container 230 has an open central portion on its top side. Each edge portion of the respective top side of the first recycling container 210, the second recycling container 220, and the third recycling container 230 slopes upward toward the respective open central portion. The processing liquid that spills from the substrate W is guided by the sloped edge portions into the first recycling space RS1, the second recycling space RS2, and / or the third recycling space RS3 of the first recycling container 210, the second recycling container 220, and the third recycling container 230.

[0068] The first treatment fluid introduced into the first recovery space RS1 is discharged to the outside through the first recovery line 241. The second treatment fluid introduced into the second recovery space RS2 is discharged to the outside through the second recovery line 143. The third treatment fluid introduced into the third recovery space RS3 is discharged to the outside through the third recovery line 145.

[0069] The liquid supply unit 400 can supply a processing liquid to the substrate W to process the substrate W. The liquid supply unit 400 can supply a heated processing liquid to the substrate W. The processing liquid can be a chemical used to process the surface of the substrate W. For example, it can be a high-temperature chemical used to etch the surface of the substrate W. For example, the chemical can be sulfuric acid, phosphoric acid, or a mixture of sulfuric acid and phosphoric acid. The liquid supply unit 400 may include a liquid nozzle member 410 and a supply unit 420.

[0070] The liquid nozzle assembly 410 may include a nozzle 411, a nozzle arm 413, a support rod 415, and a nozzle driver 417. The nozzle 411 can receive processing liquid from the supply unit 420. The nozzle 411 can discharge the processing liquid onto the surface of the substrate W. The nozzle arm 413 is an arm that extends in one direction, and the nozzle 411 is mounted on its front end. The nozzle arm 413 supports the nozzle 411. The support rod 415 is mounted on the rear end of the nozzle arm 413. The support rod 415 is located below the nozzle arm 413. The support rod 415 is arranged perpendicular to the nozzle arm 413. The nozzle driver 417 is located at the lower end of the support rod 415. The nozzle driver 417 rotates the support rod 415 about its longitudinal axis. The nozzle arm 413 and the nozzle 411 can swing about the support rod 416 as an axis by the rotation of the support rod 416. The nozzle 411 can swing between the outside and inside of the cup-shaped portion 200. In addition, the nozzle 411 can swing between the center region and the edge region of the substrate W and discharge the processing liquid.

[0071] The venting unit 500 can vent the interior of the bowl-shaped portion 200. For example, the venting unit 500 can provide venting pressure (suction pressure) to recovery containers used to recover process liquid in the first recovery container 210, the second recovery container 220, and the third recovery container 230 during the process. The venting unit 500 may include an vent line 510 and a damper 520 connected to the vent pipe 290. The vent line 510 receives venting pressure from an vent pump (not shown) and is connected to a main vent line embedded in the bottom space of the semiconductor production line.

[0072] Simultaneously, the bowl-shaped portion 200 is connected to the lifting / lowering unit 600 to change the vertical position of the bowl-shaped portion 200. The lifting / lowering unit 600 moves the bowl-shaped portion 200 linearly in the up / down direction. As the bowl-shaped portion 200 moves up and down, the relative height of the bowl-shaped portion 200 relative to the support unit 300 changes.

[0073] The lifting / lowering unit 600 includes a support 612, a moving shaft 614, and a driver 616. The support 612 is fixedly mounted on the outer wall of the chamber 100. The moving shaft 614, which moves in the up / down direction via the driver 616, is fixedly connected to the support 612. To load or unload the substrate W onto the support unit 300, the lifting / lowering unit 600 lowers the bowl-shaped portion 200, causing the support unit 300 to protrude upward from the bowl-shaped portion 200. Furthermore, during processing, the height of the bowl-shaped portion 200 is adjusted according to the type of processing liquid supplied to the substrate W, allowing the processing liquid to flow into preset recovery containers 210, 220, and 230. The bowl-shaped portion 200 can recover different types of processing liquids and contaminant gases for each of the recovery spaces RS1, RS2, and RS3.

[0074] Figure 4This is a cross-sectional view illustrating an embodiment of the support unit according to the present invention. Figure 5 This is an enlarged view of a portion of the support unit according to the present invention. Figure 6 This diagram illustrates a heating unit for a heating substrate according to a concept presented in this invention. Specifically, according to... Figure 6 The cross-sectional view shown is a cross-sectional view along the visible direction of the connection structure between the retaining pin 316 and the chuck 310.

[0075] refer to Figure 4 and Figure 5 The support unit 300 can support the substrate W and rotate the substrate W during processing.

[0076] The support unit 300 may include a chuck 310, a rotary drive unit 320, a rear nozzle unit 330, a heating unit 340, a cooling component 350, a reflector 360, a radiator 370, and a reflective layer 380.

[0077] The chuck 310 includes a chuck stage 312 and a transmission plate 314. The chuck stage 312 and the transmission plate 314 can be combined with each other to form an internal space. For example, the cross-section of the chuck stage 312 can be inverted "U" shaped. Furthermore, the transmission plate 314 can have a cover shape (e.g., an inverted "U" shaped cross-section) covering the chuck stage 312. Thus, the chuck stage 312 and the transmission plate 314 can be combined with each other to form an internal space. The transmission plate 314 is formed of a material capable of transmitting light emitted from the lamp 342, described later. For example, the transmission plate 314 can be formed of quartz.

[0078] The chuck stage 312 can be coupled to and rotated by the rotary drive unit 320. A retaining pin 316 can be mounted at the edge of the chuck stage 312. The retaining pin 316 protrudes upward from the chuck stage 312. In this case, the retaining pin 316 is configured to pass through and above the transmission plate 314. In this case, a through-hole is formed in the transmission plate 314 through which the retaining pin 316 passes. The diameter of the through-hole in the transmission plate 314 is formed larger than the diameter of the retaining pin 316, allowing the retaining pin 316 to move up and down through the through-hole between a processing position and a standby position of the substrate. The drive unit is coupled to the retaining pin 316. The drive unit provides power to the retaining pin 316, allowing it to move between the processing position and the standby position. The retaining pin 316 can align the substrate W, such that the substrate W, supported by a plurality of support pins 318 of the transmission plate 314, is placed in a precise position. During processing, the retaining pin 316 can contact the side of the substrate W to prevent the substrate W from detaching from the precise position. When the substrate W is in the processing position, the retaining pin 316 supports the substrate W by contacting the side of the substrate W.

[0079] A transmission plate 314 is located between the substrate W and the chuck stage 312. The transmission plate 314 is positioned above the chuck stage 312. The transmission plate 314 is positioned between the substrate W supported by the support unit 300 and the heating unit 340. The transmission plate 314 is positioned below the substrate W supported by the support unit 300. The transmission plate 314 is positioned between the substrate W supported by the support unit 300 and the chuck stage 312. The transmission plate 314 is positioned above the chuck stage 312. The transmission plate 314 is configured to protect the heating unit 340. The transmission plate 314 can be transparent. The transmission plate 314 can rotate together with the chuck stage 312. The transmission plate 314 includes support pins 318. The support pins 318 are spaced apart along the edge of the upper surface of the transmission plate 314. The support pins 318 are configured to project upwards from the transmission plate 314. The support pins 318 support the rear portion of the substrate W, such that the substrate W is supported while being spaced apart from the transmission plate 314.

[0080] The rotary drive unit 320 has a hollow shape and is connected to the chuck stage 312 to rotate the chuck stage 312. When the chuck stage 312 rotates, the transmissive plate 314 can rotate together with the chuck stage 312. Furthermore, components disposed within the internal space of the chuck 310 can be independent of the rotation of the chuck 310. For example, the heating unit 340, the reflector 360, and the radiator 370, which will be described later, can be independent of the rotation of the chuck 310. The heating unit 340 is configured not to move when the chuck 310 rotates. The reflector 360 and the radiator 370 are configured not to move when the chuck 310 rotates.

[0081] The rear nozzle unit 330 is configured to spray a chemical liquid onto the rear surface of the substrate W. The rear nozzle unit 330 includes a nozzle body 332 and a chemical liquid spraying unit 334. The chemical liquid spraying unit 334 is located above the center of the chuck stage 312 and the transmission plate 314. The nozzle body 332 is constructed via a hollow rotary drive unit 320, and chemical liquid transport lines, gas supply lines, and purge gas supply lines can be disposed within the nozzle body 332. The chemical liquid transport lines supply etchant to the chemical liquid spraying unit 334 for etching the rear surface of the substrate W; the gas supply lines supply nitrogen gas to the rear surface of the substrate W to control etching uniformity; and the purge gas supply lines supply nitrogen purge gas to prevent etchant from penetrating between the transmission plate 314 and the nozzle body 332.

[0082] The heating unit 340 can heat the substrate W during processing. The heating unit 340 can be disposed within the chuck 310. For example, the heating unit 340 can be disposed within the internal space of the chuck 310. The heating unit 340 includes a lamp 342 and a temperature control unit (not shown).

[0083] A lamp 342 is mounted above the chuck stage 312. The lamp 342 generates heat energy to heat the substrate W supported by the support unit 300. The lamp 342 heats the substrate W by irradiating it with light. The lamp 342 is typically arranged in a ring. Multiple lamps 342 can be provided. The lamps 342 can have different diameters. Each lamp 342 has a temperature control unit, allowing for individual temperature control. Furthermore, the lamp 342 can be an infrared lamp. Therefore, the lamp 342 irradiates infrared light to heat the substrate W. A reflective layer 380, which will be described later, can be provided at the lamp 342.

[0084] The heating unit 340 can define multiple concentric heating zones. Each heating zone can be equipped with a lamp 342, and each heating zone can be independently heated by its own lamp. At least some of the lamps 342 can have annular shapes. Furthermore, the lamps 342 can have different radii relative to the center of the chuck stage 312, but can be spaced apart so that their centers coincide with each other. Although six lamps 342 are shown in a cross-section of this embodiment, this is merely an example, and the number of lamps 342 in the cross-section can be increased or decreased depending on the desired temperature and degree of control. The heating unit 340 can independently control the temperature of each individual heating zone, thereby continuously raising or lowering the temperature along the radial direction of the substrate W during processing.

[0085] The plurality of lamps 342 includes a first lamp 342a disposed at the outermost portion of the plurality of lamps 342 and one or more remaining second lamps 342b. A reflector 360 may have a protrusion 364 disposed between the first lamp 342a and the second lamp 342b closest to the first lamp 342a. A reflective layer 380 is disposed on the surface of the first lamp 342a.

[0086] A reflective layer 380 is disposed at the position closest to the first lamp 342a of the heating unit 340. For example, the reflective layer 380 is disposed on the surface of the first lamp 342a. The reflective layer 380 blocks the light emitted from the first lamp 342a, thereby preventing it from being directed to adjacent components. More specifically, the reflective layer 380 can reflect the light emitted from the first lamp 342a to change the light path toward the substrate W.

[0087] A reflective layer 380 is disposed on at least a portion of the surface of the lamp 342. The reflective layer 380 may be disposed on the surface of the first lamp 342a that does not face the protrusion 346. In this case, the reflective layer 380 may be disposed on the opposite side of the protrusion 346. The reflective layer 380 is not disposed on the surface of the first lamp 342a in the region where light emitted from the first lamp 342a directly propagates to the substrate W. In other words, the reflective layer 380 may be disposed on the surface of the first lamp 342a in the portion where light emitted from the first lamp 342a is not guided to the substrate W.

[0088] The reflective layer 380 can be disposed on the surface of the lamp 342 opposite to the surface facing the protrusion 364, for example, on the surface of the first lamp 342a facing the retaining pin 316. The reflective layer 380 can also be disposed on the surface of the lamp 342 opposite to the surface of the curved surface R facing the protrusion 364. The reflective layer 380 is circular. In this case, the curvature of the inner surface of the reflective layer 380 can correspond to the curvature of the first lamp 342a.

[0089] The reflective layer 380 is made of a material with strong heat resistance to the heat emitted from the lamp 342. The reflective layer 380 is formed of a material with a high cutoff rate or high reflectivity to the heat emitted from the lamp 342. For example, the reflective layer 380 can be formed of a metallic material. For example, the reflective layer 380 can be formed of any of gold, silver, copper, aluminum, or ceramic. For example, the reflective layer 380 can be formed of the same material as the reflector 360. Alternatively, the reflective layer 380 can be formed of a material different from the material of the reflector 360.

[0090] A reflective layer 380 is disposed at a position that blocks light emitted from the first lamp 342a in a direction not toward the substrate W. The reflective layer 380 blocks light directly emitted from the first lamp 342a in a direction not toward the substrate W. The reflective layer 380 is disposed at a position capable of reflecting light directly emitted from the lamp 342a in a direction not toward the substrate W, and the light reflected by the reflective layer 380 illuminates the substrate W. The reflective layer 380 blocks light emitted from the lamp 342a and reflected by the reflective plate 360 ​​in a direction not toward the substrate W. In this case, the reflective layer 380 is disposed at a position capable of reflecting light emitted from the lamp 342a and reflected by the reflective plate 360 ​​in a direction not toward the substrate W, and the light reflected by the reflective layer 380 illuminates the substrate W. As described above, according to the present invention, by applying the reflective layer 380 to the surface of the lamp 342, the optical path of light emitted in a direction not toward the substrate W can be changed, thereby improving the efficiency of the lamp 342. Furthermore, light emitted in a direction not facing (not propagating to) the substrate W can be blocked, thereby preventing thermal deformation and thermal damage to the peripheral components of the substrate W.

[0091] refer to Figure 6 A reflective layer 380 is disposed between a first end P1 and a second end P2 on the surface of the lamp 342. When viewed in a vertical cross-section, the first end P1 of the reflective layer 380 is located on the first path L1 of light emitted from the first lamp 342a and illuminating a third point P3 on the substrate W described later. Furthermore, refer to... Figure 6When viewed from a vertical cross-section, with the substrate supported by the retaining pin 316, the first end P1 of the reflective layer 380 is located on the line passing through the center C of the first lamp 342a and the third point P3 of the substrate W. The second end P2 of the reflective layer 380 is located on the second path L2 of the light emitted from the first lamp 342a and illuminating the edge region P4 of the reflective plate 360.

[0092] Of the light emitted from the first lamp 342a, the light passing through the first end P1 of the first lamp 342a is illuminated. Figure 6 The third point P3. The third point P3 can refer to the end of the substrate W supported by the support unit 300. Furthermore, the third point P3 can represent the point where the substrate W supported by the support unit 300 contacts the retaining pin 316. The second end P2 of the reflective layer 380 is located on the second path L2 of the light emitted from the lamp 342 and illuminating the edge region P4 of the reflector 360. The second path L2 can be a path connecting the center C of the lamp 342 and the outer edge region P4 of the reflector 360. That is, among the light emitted from the first lamp 342a, the light passing through the second end P2 of the first lamp 342a illuminating the outer edge region P4 of the reflector 360 and being reflected by the reflector 360 to illuminating the substrate W.

[0093] Unlike the present invention, when the reflective layer 380 is not applied, light emitted between the first end P1 and the second end P2 illuminates adjacent components, causing thermal damage and / or thermal deformation. However, in the present invention, light emitted between the first end P1 and the second end P2 from the first lamp 342a is reflected by the reflective layer 380 and guided to the substrate W. Therefore, the efficiency of the lamp 342 can be improved by concentrating the heat radiated and uniformly from the first lamp 342a onto the substrate W, and thermal deformation and / or thermal damage to adjacent peripheral components can be prevented by suppressing the temperature rise of adjacent components due to thermal energy.

[0094] Cooling member 350 can supply cooling fluid to chuck 310. For example, cooling member 350 can supply cooling fluid to flow path 372 formed in radiator 370, which will be described later. Cooling fluid can be a gas. Cooling fluid can be an inert gas. For example, cooling fluid can be an inert gas containing nitrogen.

[0095] The reflector 360 can reflect the heat generated by the heating unit 342 to the substrate W. The reflector 360 can reflect the heat generated by the heating unit 342 to the edge region and / or the center region of the substrate W. The reflector 360 can be made of a material with high reflectivity to the heat generated by the heating unit 340. The reflector 360 can be made of a material with high reflectivity to the light irradiated by the lamp 342. For example, the reflector 360 can be made of a material including gold, silver, copper, and / or aluminum. The reflector 360 can be made of a material coated with gold, silver, copper, and / or aluminum on quartz. The reflector 360 can be made of a material coated with gold, silver, copper, and / or aluminum on quartz by physical vapor deposition (PVD).

[0096] The reflector 360 can be disposed within the chuck 310. The reflector 360 can be disposed within the internal space formed by the combination of the chuck stage 312 and the transmission plate 314. When viewed from above, the reflector 360 can have a basic disc shape. For example, when viewed from above, the reflector 360 can have a disc-shaped shape with an opening formed in its central region. The reflector 360 can be formed of a reflective material, or a reflective material can be coated on the surface of the reflector 360.

[0097] The reflector 360 may include a base 362 and a protrusion 364. The base 362 may be disposed below the heating unit 340. The base 362 may be disposed below the lamp 342. The protrusion 364 may project upward from the base 362. The protrusion 364 may be disposed between adjacent lamps 342. For example, when viewed from above, the protrusion 364 may be disposed between the outermost lamp 342 and the lamp 342 closest to the outermost lamp 342. Furthermore, the protrusion 364 may have an arcuate shape. Additionally, multiple protrusions 364 may be provided. When viewed from above, the protrusions 364 may be combined with each other to form a generally annular shape.

[0098] Furthermore, at least some of the surfaces of the base 362 and / or the protrusions 364 may be curved. For example, the surfaces of the base 362 and / or the protrusions 364 facing the heating unit 340 may be curved. For example, the surfaces of the base 362 and / or the protrusions 364 may include a curved surface R that reflects light irradiated by the lamp 342 onto the substrate W, such as an edge region of the substrate W. For example, the base 362 and the protrusions 364 may be joined together to form the curved surface R. When light for heating the substrate W is irradiated by the lamp 342, a portion of the light irradiated by the lamp 342 may directly irradiate the substrate W, and a portion of the light irradiated by the lamp 342 may be reflected by the reflective surface of the reflector 360 to indirectly irradiate the substrate W.

[0099] The radiator 370 can be disposed within the chuck 310. The radiator 370 can be disposed within the internal space formed by the combination of the chuck stage 312 and the transmission plate 314. When viewed from above, the radiator 370 can have a generally disc-shaped shape. A cooling flow path can be formed within the radiator 370 through which cooling fluid supplied by the cooling member 350 can flow. Furthermore, the radiator 370 can be made of a material with high thermal conductivity to minimize the heat rise generated by the heating unit 340 on the rotary drive unit 320. When the radiator 370 is made of a material with high thermal conductivity, the radiator 370 can quickly dissipate heat to the outside of the support unit 300. This is to prevent the rotary drive unit 320 from being improperly driven when its temperature becomes too high. The radiator 370 can be made of a material containing aluminum. Furthermore, compared to the reflector 360, the radiator 370 can be made of a material with even higher thermal conductivity.

[0100] The effects of this invention are not limited to those described above. Those skilled in the art can clearly understand the effects not mentioned from the specification and drawings.

[0101] Although preferred embodiments of the inventive concept have been illustrated and described to date, the inventive concept is not limited to the specific embodiments described above, and it should be noted that those skilled in the art to which the inventive concept pertains can implement the inventive concept in various ways without departing from the essence of the inventive concept claimed in the claims, and modifications should not be interpreted separately from the technical spirit or prospect of the inventive concept.

Claims

1. A substrate support unit for supporting a substrate, the substrate support unit comprising: A chuck that supports and rotates the substrate; Lamp unit, the lamp unit being disposed below the substrate to heat the substrate, and A reflector, the reflector including a base, the base being disposed below the lamp unit. The lamp unit includes a first lamp having a reflective layer on its surface to block and / or reflect light emitted from the first lamp but not directed to the substrate, thereby directing the light to the substrate. The reflective layer is disposed at a location that blocks light reflected by the reflector and emitted from the first lamp, but not directly directed to the substrate. When viewed in a vertical cross-section, the first end of the reflective layer is located on the first path of light emitted from the first lamp to the end of the substrate, and the second end of the reflective layer is located on the second path of light emitted from the first lamp to the edge region of the reflective plate.

2. The substrate support unit according to claim 1, wherein the reflector includes a protrusion that projects upward from the base and reflects light emitted from the first lamp to an edge region of the substrate.

3. The substrate support unit according to claim 1, wherein the reflector includes a protrusion that projects upward from the base and reflects light emitted from the first lamp to an edge region of the substrate, and the reflective layer is disposed on the surface of the first lamp opposite to the surface facing the protrusion.

4. The substrate support unit according to claim 3, wherein the reflective layer is disposed at a position that blocks light emitted from the first lamp but not directly directed to the substrate.

5. The substrate support unit according to any one of claims 1 to 4, wherein the first lamp is configured as an annular shape, the lamp unit further includes one or more second lamps located inside the first lamp, and the reflective layer is disposed only at the first lamp among the first lamp and the second lamp.

6. A substrate processing apparatus, comprising: A bowl-shaped portion, wherein the bowl-shaped portion has an internal processing space; Support unit, the support unit supports the substrate within the processing space; A liquid supply unit supplies processing liquid to the substrate supported by the support unit. The support unit includes: A chuck that supports and rotates the substrate; A heating unit that heats the substrate supported by the chuck; and A reflector, comprising a base disposed below the heating unit. The heating unit includes a first lamp located below the substrate, the first lamp heating the substrate supported by the chuck, and a reflective layer disposed on a portion of its surface to block and / or reflect light emitted from the first lamp but not directed to the substrate, thereby directing the light to the substrate. The reflective layer is disposed at a location that blocks light reflected by the reflector and emitted from the first lamp, but not directly directed to the substrate. When viewed in a vertical cross-section, the first end of the reflective layer is located on the first path of light emitted from the first lamp to the end of the substrate, and the second end of the reflective layer is located on the second path of light emitted from the first lamp to the edge region of the reflective plate.

7. The substrate processing apparatus of claim 6, wherein the first lamp is configured as an annular shape, the heating unit is configured as an annular shape and includes one or more second lamps located inside the first lamp, and the reflective layer is disposed only at the first lamp among the first lamp and the second lamps.

8. The substrate processing apparatus of claim 6, wherein the chuck includes a chuck stage and a transmission plate, the chuck stage and the transmission plate together defining an internal space, the transmission plate being adjacent to the substrate and transmitting light emitted from the heating unit to the substrate, and the lamp being disposed in the internal space of the chuck.

9. The substrate processing apparatus of claim 8 further includes a retaining pin that protrudes upward from the chuck table and supports the edge of the substrate during processing.

10. The substrate processing apparatus according to claim 8, wherein the heating unit is configured not to rotate when the chuck rotates.

11. The substrate processing apparatus of claim 9, wherein the reflective layer is located such that, in a vertical cross-section, a first end of the reflective layer is located on a line passing through the center of the first lamp and the contact point between the retaining pin and the substrate supported by the retaining pin.

12. The substrate processing apparatus of claim 11, wherein the reflector includes a protrusion that projects upward from the base and reflects light emitted from the first lamp to the edge region of the substrate, and the reflective layer is disposed on the surface of the first lamp that does not face the protrusion.

13. The substrate processing apparatus of claim 12, wherein the protrusion is positioned between the first lamp located at the outermost edge of the lamp and the second lamp adjacent to the first lamp.

14. The substrate processing apparatus of claim 12, wherein at least some of the protrusions include a curved surface formed in a circular shape.

15. The substrate processing apparatus according to claim 12, wherein the reflective layer is disposed on the surface of the first lamp opposite to the surface facing the protrusion.

16. A substrate processing apparatus, comprising: A bowl-shaped portion, wherein the bowl-shaped portion has an internal processing space; Support unit, the support unit supports the substrate within the processing space; A liquid supply unit supplies processing liquid to the substrate supported by the support unit. The support unit includes: A chuck stage that supports and rotates the substrate; A heating unit that heats the substrate supported by the chuck; A reflector, the reflector including a base disposed below the heating unit; and A transmissive plate, placed between the substrate supported by the support unit and the heating unit, transmits light emitted from the heating unit. The heating unit includes: A first lamp, located between the chuck stage and the substrate supported by the chuck stage, is annular in shape and has a reflective layer disposed on a portion of its surface; and One or more second lamps, the one or more second lamps being located inside the first lamp, The reflective layer is disposed at a location that blocks light reflected by the reflector and / or emitted from the first lamp but not directly directed to the substrate, among light reflected by the reflector and / or emitted from the first lamp. When viewed in a vertical cross-section, the first end of the reflective layer is located on the first path of light emitted from the first lamp to the end of the substrate, and the second end of the reflective layer is located on the second path of light emitted from the first lamp to the edge region of the reflective plate.

17. The substrate processing apparatus according to claim 16, wherein the reflective layer is not disposed in the region of the surface of the first lamp that emits light directly toward the substrate.

18. The substrate processing apparatus of claim 16, further comprising a retaining pin located on the chuck stage and penetrating the transmissive plate, the retaining pin projecting upward from the transmissive plate and supporting the edge of the substrate during processing, and the reflective layer being positioned such that the first end of the reflective layer is located on a line passing through the center of the first lamp and the contact point between the retaining pin and the substrate supported by the retaining pin.

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