Magnetic recording array and reservoir element

Abstract

The magnetic recording array (200) of the present embodiment includes: a plurality of spin elements (100) each having a wiring (20) and a laminate (10) including a first ferromagnetic layer (1) laminated on the wiring, and arranged in a matrix; a plurality of write wirings (Wp1-Wpn) connected to first ends of the wirings of the respective spin elements; a plurality of read wirings (Rp1-Rpn) connected to the laminates of the respective spin elements; and a plurality of common wirings (Cm1-Cmn) connected to second ends of the wirings of the respective spin elements belonging to the same column, the common wirings having a resistance lower than the write wirings or the read wirings.

Description

Technical Field

[0001] This invention relates to magnetic recording arrays and reservoir elements. Background Technology

[0002] Next-generation non-volatile memories, such as flash memory, which have reached their miniaturization limits, are attracting attention. Examples of next-generation non-volatile memories include MRAM (Magnetoresistive Random Access Memory), ReRAM (Resistance Random Access Memory), and PCRAM (Phase Change Random Access Memory).

[0003] MRAM is a memory element that uses a magnetoresistive element. The resistance of the magnetoresistive element varies depending on the relative angle between the magnetization directions of the two magnetic films. MRAM records the resistance value of the magnetoresistive element as data.

[0004] Among spin elements that utilize magnetoresistive variations, spin-orbit torque type magnetoresistive effect elements that utilize spin-orbit torque (SOT) (e.g., Patent Document 1) or domain wall moving type magnetic recording elements that utilize the movement of domain walls (e.g., Patent Document 2) have attracted attention. These spin elements are controlled by connecting to semiconductor devices such as transistors via wiring. For example, Patent Document 3 describes a technique for improving the electromigration resistance of wiring by forming a barrier metal film on the wiring in a semiconductor device.

[0005] Existing technical documents

[0006] Patent documents

[0007] Patent Document 1: Japanese Patent Application Publication No. 2017-216286

[0008] Patent Document 2: Japanese Patent No. 5441005

[0009] Patent Document 3: Japanese Patent Application Publication No. 2016-21530 Summary of the Invention

[0010] The technical problem the invention aims to solve

[0011] In a magnetic recording array where multiple spin elements are arranged in a matrix, or in a reservoir element using such a magnetic recording array, the writing and reading operations of the spin elements are performed by combining three types of wiring: write wiring, read wiring, and common wiring. In this case, the common wiring becomes the most susceptible to degradation because it is used for both the writing and reading operations of the spin elements.

[0012] The present invention was made in view of the above-mentioned technical problems, and its purpose is to provide a magnetic recording array and a reservoir element whose shared wiring is not easily degraded.

[0013] Means for solving technical problems

[0014] In order to solve the above-mentioned technical problems, the present invention provides the following technical means.

[0015] (1) A magnetic recording array comprising: a plurality of spin elements, each having wiring and a stack containing a first ferromagnetic layer stacked on the wiring, arranged in a matrix; a plurality of write wirings connected to a first end of the wiring of each of the plurality of spin elements; a plurality of read wirings connected to the stack of each of the plurality of spin elements; and a plurality of common wirings connected to a second end of the wiring of each spin element belonging to the same column, the resistance of the common wirings being lower than that of the write wirings or the read wirings.

[0016] (2) The magnetic recording array as described in (1), wherein the resistance of the common wiring is lower than that of the write wiring and the read wiring, and the resistance of the write wiring is lower than that of the read wiring.

[0017] (3) The magnetic recording array as described in (1), wherein the resistance of the common wiring is lower than that of the write wiring and the read wiring, and the resistance of the read wiring is lower than that of the write wiring.

[0018] (4) The magnetic recording array as described in (1), wherein the cross-sectional area of ​​the common wiring relative to the direction of current application is larger than that of the write wiring or the read wiring.

[0019] (5) The magnetic recording array as described in (4), wherein the cross-sectional area of ​​the common wiring relative to the direction of application of the current is larger than that of the write wiring and the read wiring, and the cross-sectional area of ​​the write wiring relative to the direction of application of the current is larger than that of the read wiring.

[0020] (6) The magnetic recording array as described in (4), wherein the cross-sectional area of ​​the common wiring relative to the direction of application of the current is larger than that of the write wiring and the read wiring, and the cross-sectional area of ​​the read wiring relative to the direction of application of the current is larger than that of the write wiring.

[0021] (7) The magnetic recording array as described in (1), wherein the resistivity of the common wiring is lower than that of the write wiring or the read wiring.

[0022] (8) The magnetic recording array as described in (7), wherein the resistivity of the common wiring is lower than that of the write wiring and the read wiring, and the resistivity of the write wiring is lower than that of the read wiring.

[0023] (9) The magnetic recording array as described in (7), wherein the resistivity of the common wiring is lower than that of the write wiring and the read wiring, and the resistivity of the read wiring is lower than that of the write wiring.

[0024] (10) A magnetic recording array comprising: a plurality of spin elements, each having wiring and a stack containing a first ferromagnetic layer stacked on the wiring, arranged in a matrix; a plurality of write wirings connected to a first end of the wiring of each of the plurality of spin elements; a plurality of read wirings connected to the stack of each of the plurality of spin elements; and a plurality of common wirings connected to a second end of the wiring of each spin element belonging to the same column, the activation energy of the common wirings being higher than that of the write wirings or the read wirings.

[0025] (11) The magnetic recording array as described in (10), wherein the activation energy of the common wiring is higher than that of the write wiring and the read wiring, and the activation energy of the write wiring is higher than that of the read wiring.

[0026] (12) The magnetic recording array as described in (10), wherein the activation energy of the common wiring is higher than that of the write wiring and the read wiring, and the activation energy of the read wiring is higher than that of the write wiring.

[0027] (13) The magnetic recording array as described in any one of (10) to (12), wherein the common wiring comprises a material with an activation energy of 300 kJ / mol or more.

[0028] (14) The magnetic recording array as described in any one of (10) to (13), wherein the common wiring comprises at least one metal selected from Si, Ti, Cr, Ta, W and Ir.

[0029] (15) The magnetic recording array described in any one of (1) to (14), wherein the write wiring extends in one direction, the read wiring extends in a direction different from the one direction, and the common wiring extends in a direction different from the extension direction of the write wiring and the extension direction of the read wiring.

[0030] (16) The magnetic recording array as described in any one of (1) to (15), wherein the wiring of the spin element and the common wiring are connected via a control element.

[0031] (17) The magnetic recording array described in any one of (1) to (16), wherein the wiring is any one of a metal, alloy, intermetallic compound, metal boride, metal carbide, metal silicide and metal phosphide that has the function of generating spin current by utilizing the spin Hall effect when current flows.

[0032] (18) A magnetic recording array as described in any one of (1) to (17), wherein the stack comprises a non-magnetic layer and the first ferromagnetic layer from the side closest to the wiring, and the wiring is a ferromagnetic layer capable of having magnetic domain walls inside.

[0033] (19) A reservoir element comprising: a magnetic recording array as described in any one of (1) to (18); and a spin conduction layer connecting the first ferromagnetic layer of the plurality of spin elements.

[0034] The effects of the invention

[0035] According to the present invention, a magnetic recording array and a reservoir element whose shared wiring is not easily degraded can be provided. Attached Figure Description

[0036] Figure 1 This is a schematic diagram of the magnetic recording array according to the first embodiment.

[0037] Figure 2 This is a schematic diagram of another example of the magnetic recording array of the first embodiment.

[0038] Figure 3 This is a cross-sectional view of the feature portion of the magnetic recording array according to the first embodiment.

[0039] Figure 4 This is a cross-sectional view of the spin element in the first embodiment.

[0040] Figure 5 This is a top view of the spin element in the first embodiment.

[0041] Figure 6 This is a cross-sectional view of the spin element in the second embodiment.

[0042] Figure 7 This is a cross-sectional view of the spin element in the third embodiment.

[0043] Figure 8 This is a perspective view of the reservoir element in the fourth embodiment.

[0044] Explanation of symbols

[0045] 1, 4... First ferromagnetic layer

[0046] 2...Second ferromagnetic layer

[0047] 3, 5... Non-magnetic layers

[0048] 10, 11...Layered structures

[0049] 20, 21... wiring

[0050] 20a…Side 1

[0051] 20b……Page 2

[0052] 21A...First Magnetic Region

[0053] 21B...Second Magnetic Region

[0054] 30……First conductive part

[0055] 40……Second conductive part

[0056] 70……Spin conduction layer

[0057] 90, 91, 92... Insulation layer

[0058] 100, 102... Magnetoresistive elements

[0059] 101……Magnetized Rotating Element

[0060] 103……Reservoir Components

[0061] 110……First Switching Element

[0062] 120……Second Switching Element

[0063] 130……Third Switching Element

[0064] 140……Common switching element

[0065] 200, 201... magnetic recording arrays

[0066] C1, C2, C3, C4... Center

[0067] Cm1~Cm n ...shared wiring

[0068] Cw……Conductive part

[0069] D...Drain electrode

[0070] E……Conductive layer

[0071] G……gate electrode

[0072] GI... Gate insulating film

[0073] Rp1~Rp n ...read wiring

[0074] S……Source

[0075] Sub…Substrate

[0076] Tr……transistor

[0077] Wp1~Wp n ...written into wiring Detailed Implementation

[0078] Hereinafter, this embodiment will be described in detail with reference to the accompanying drawings. The drawings used in the following description may sometimes show enlarged portions of features for easier understanding, and there may be discrepancies between the actual dimensions and proportions of the constituent elements. The materials, dimensions, etc., illustrated in the following description are examples, and the present invention is not limited thereto; appropriate modifications can be made to achieve the effects of the present invention.

[0079] First, the orientation is defined. Let the substrate Sub (refer to...) be described later. Figure 3 Let the x-direction be one direction of one face of the wiring diagram, and let the y-direction be the direction orthogonal to the x-direction. The x-direction is the direction in which wiring 20 extends, as described later, and is the length direction of wiring 20. The x-direction is an example of the first direction. The y-direction is an example of the second direction. The z-direction is the direction orthogonal to both the x-direction and the y-direction. The z-direction is an example of the stacking direction. Hereinafter, the +z-direction will sometimes be represented as "up" and the -z-direction as "down". Up and down are not necessarily consistent with the direction in which gravity is applied.

[0080] In this specification, "extending along the x-direction" means, for example, that the dimension in the x-direction is larger than the smallest dimension among the dimensions in the x, y, and z directions. The same applies to extensions in other directions.

[0081] Implementation Method 1

[0082] Figure 1 This is a structural diagram of the magnetic recording array 200 according to the first embodiment. The magnetic recording array 200 includes: a plurality of magnetoresistive effect elements 100 and a plurality of write lines Wp1 to Wp1. n Multiple shared wiring Cm1~Cmn Multiple read wirings Rp1~Rp n The magnetic recording array 200 includes a plurality of first switching elements 110, a plurality of second switching elements 120, and a plurality of third switching elements 130. The magnetic recording array 200 can be used, for example, in magnetic memory. The magnetoresistive element 100 is an example of a spin element.

[0083] Figure 1 The multiple magnetoresistive elements 100 shown are arranged in a matrix of n rows and m columns. n and m are arbitrary integers. Here, "matrix" does not mean that the actual elements are arranged in a matrix, but also includes the case where they can be recorded in a matrix in the circuit diagram.

[0084] Write wiring Wp1~Wp n This is the wiring connected to the first terminal of the wiring described later for the magnetoresistive element 100. Write the wiring Wp1 to Wp1. n For example, it can be used when writing data. Figure 1 The write wiring Wp1~Wp shown n There are n lines. Write the wiring information from line Wp1 to line Wp. n Connect the power supply (illustration omitted) to one or more magnetoresistive effect elements 100. Figure 1 The write wiring Wp1~Wp shown n Connect the power supply (illustration omitted) to the magnetoresistive element 100 in the same row. Write the wiring diagram Wp1 to Wp. n It can be connected to each magnetoresistive element 100 by connecting one wire to each magnetoresistive element 100, or it can be connected to all magnetoresistive elements 100 belonging to the same column.

[0085] Read wiring Rp1~Rp n This is the wiring connected to the laminated structure of the magnetoresistive element 100, described later. Read the wiring Rp1 to Rp... n For example, wiring used when reading data. Figure 1 The read wiring diagram shown is Rp1~Rp n There are n lines. Read the wiring Rp1 to Rp n Connect the power supply (illustration omitted) to one or more magnetoresistive effect elements 100. Figure 1 The read wiring diagram shown is Rp1~Rp n Connect the power supply (illustration omitted) to the magnetoresistive element 100 in the same row. Read the wiring Rp1 to Rp n It can be connected to each magnetoresistive element 100 by connecting one wire to each magnetoresistive element 100, or it can be connected to all magnetoresistive elements 100 belonging to the same column.

[0086] Common wiring Cm1~Cm m This is the wiring connected to the second terminal of the wiring described later for the magnetoresistive element 100. Common wiring Cm1~Cm m For example, the wiring used during data writing and reading. Figure 1 The common wiring Cm1~Cm shown m There are m lines. They share wiring Cm1 to Cm. m Connect the reference potential to the magnetoresistive element 100 belonging to the same column. The reference potential is, for example, ground.

[0087] Common wiring Cm1~Cm m For example, the resistance ratio is written into the wiring Wp1~Wp n Or read wiring Rp1~Rp n Low-level configuration. Shared wiring Cm1~Cm m The preferred resistance ratio is written into the wiring Wp1~Wp n And read wiring Rp1~Rp n Low. Shared wiring Cm1~Cm m Preferred resistors relative to write wiring Wp1~Wp n and read wiring Rp1~Rp n Lower than 80%, more preferably lower than 50%. Write to wiring Wp1~Wp n With read wiring Rp1~Rp n The resistors can be the same or different, and can be written into wiring Wp1~Wp. n The resistance ratio is read from the wiring Rp1~Rp n Low, or read wiring Rp1~Rp n The resistance ratio is written into the wiring Wp1~Wp n Low.

[0088] Common wiring Cm1~Cm m Write to wiring Wp1~Wp n Read wiring Rp1~Rp n The resistance can be adjusted, for example, by means of the cross-sectional area or resistivity relative to the direction of current application. Common wiring Cm1 to Cm is preferred. m The cross-sectional area ratio relative to the direction of current application is written into the wiring Wp1~Wp n Or read wiring Rp1~Rp n Larger. A more preferred option is to use shared wiring Cm1 to Cm. m The cross-sectional area ratio relative to the direction of current application is written into the wiring Wp1~Wp n And read wiring Rp1~Rp n Large. Preferred common wiring Cm1~Cm m Relative to the write wiring Wp1~Wpn And read wiring Rp1~Rp n Its cross-sectional area relative to the direction of current application is 25% or more, more preferably 100% or more. Write the wiring Wp1 to Wp n And read wiring Rp1~Rp n The cross-sectional areas relative to the direction of current application can be the same, or they can be written into wiring Wp1~Wp n The cross-sectional area ratio relative to the direction of current application is used to read the wiring Rp1~Rp. n Large, or read wiring Rp1~Rp n The cross-sectional area ratio relative to the direction of current application is written into the wiring Wp1~Wp n big.

[0089] Preferred common wiring Cm1~Cm m The resistivity ratio is written into the wiring Wp1~Wp n Or read wiring Rp1~Rp n Low. A shared wiring configuration (Cm1~Cm) is preferred. m The resistivity ratio is written into the wiring Wp1~Wp n And read wiring Rp1~Rp n Low. Preferred common wiring Cm1~Cm m Relative to the write wiring Wp1~Wp n And read wiring Rp1~Rp n The resistivity is lower than 80%, more preferably lower than 50%. Write the wiring Wp1 to Wp. n With read wiring Rp1~Rp n The resistivity can be the same, or it can be written in the wiring Wp1~Wp n The resistivity ratio of the wiring Rp1 to Rp n Low, or read wiring Rp1~Rp n The resistivity ratio is written into the wiring Wp1~Wp n Low.

[0090] In addition, the common wiring Cm1~Cm m For example, the configuration is such that the activation energy ratio is written into the wiring Wp1~Wp n Or read wiring Rp1~Rp n High. Preferred common wiring Cm1~Cm m The activation energy ratio is written into the wiring Wp1~Wp n And read wiring Rp1~Rp n High. Preferred common wiring Cm1~Cm m Relative to the write wiring Wp1~Wp n And read wiring Rp1~Rp nThe activation energy is more than 50% higher, and even more preferably more than 100% higher. Write the wiring Wp1~Wp n With read wiring Rp1~Rp n The activation energies can be the same, or they can be written into wiring Wp1~Wp n The activation energy ratio is read from wiring Rp1 to Rp n High, or read wiring Rp1~Rp n The activation energy ratio is written into the wiring Wp1~Wp n high.

[0091] Common wiring Cm1~Cm m The activation energy can be utilized to form a common wiring Cm1~Cm m The materials are adjusted. A shared wiring Cm1~Cm is preferred. m Materials containing activation energies of 300 kJ / mol or higher are included. Furthermore, shared wiring Cm1 to Cm is preferred. m It contains at least one metal selected from Si, Ti, Cr, Ta, W, and Ir. Common wiring Cm1 to Cm m It can be the aforementioned metal monomer, a laminated structure of the aforementioned metal and other conductive metals, or an alloy containing the aforementioned metals. In the case of an alloy, it is preferable that it contains the aforementioned metals in a range of 10% to 80% compared to the base material. Common wiring Cm1 to Cm m The basic materials can include conductive metals such as Cu, Ag, and Au. Write the wiring Wp1~Wp n And read wiring Rp1~Rp n The materials can be selected from these conductive metals.

[0092] The first switching element 110, the second switching element 120, and the third switching element 130 are connected to each magnetoresistive effect element 100. The first switching element 110 is connected between the magnetoresistive effect element 100 and the write lines Wp1 to Wp1. n Between. The second switching element 120 is connected between the magnetoresistive effect element 100 and the common wiring Cm1~Cm. n Between. The third switching element 130 is connected between the magnetoresistive effect element 100 and the reading wiring Rp1~Rp. n between.

[0093] When the first switching element 110 and the second switching element 120 are turned on, the write lines Wp1 to Wp connected to the specified magnetoresistive effect element 100... n With shared wiring Cm1~Cm nA write current flows between them. When the second switching element 120 and the third switching element 130 are turned on, the common wiring Cm1 to Cm1 connected to the specified magnetoresistive effect element 100 flows through them. n With read wiring Rp1~Rp n Current is read from between them.

[0094] The first switching element 110, the second switching element 120, and the third switching element 130 are control elements that control the flow of current. The first switching element 110, the second switching element 120, and the third switching element 130 are, for example, elements that utilize phase changes in the crystal layer, such as transistors and bidirectional threshold switches (OTS); elements that utilize changes in the band structure, such as metal-insulator transition (MIT) switches; elements that utilize breakdown voltage, such as Zener diodes and avalanche breakdown diodes; or elements whose conductivity changes with atomic positions.

[0095] Yes, any one of the first switching element 110, the second switching element 120, and the third switching element 130 can also be shared by the magnetoresistive effect element 100 connected to the same wiring. For example, in the case of sharing the first switching element 110, in the write wiring Wp1 to Wp n A first switching element 110 is provided upstream of the common second switching element 120. For example, in the case of sharing the common wiring Cm1 to Cm n A second switching element 120 is provided upstream of the connection. For example, in the case of sharing a third switching element 130, when reading wiring Rp1 to Rp... n A third switching element 130 is set upstream. Figure 2 This illustrates an example of a magnetic recording array 201 sharing a second switching element 120. In Figure 2 In the magnetic recording array 201 shown, a common wiring Cm1 connected to the magnetoresistive effect elements 100 belonging to the same column is connected to a common switching element 140, and the magnetoresistive effect elements 100 belonging to the same column share the common switching element 140.

[0096] Here, the resistance of each wiring is explained. Write the wiring details Wp1 to Wp... n Read wiring Rp1~Rp n and shared wiring Cm1~Cm m The resistance is the resistance between the magnetoresistive element 100 and the switching element. For example, in Figure 1 In the case of the magnetic recording array 200 shown, the write lines Wp1 to Wp nThe resistance is the resistance between the magnetoresistive element 100 and the first switching element 110. Read the wiring Rp1~Rp n The resistance is the resistance between the magnetoresistive element 100 and the third switching element 130. Common wiring Cm1~Cm m The resistance is the resistance between the magnetoresistive element 100 and the second switching element 120. Figure 2 In the case of the magnetic recording array 201 shown, the resistance of the common wiring Cm1 is the resistance between each magnetoresistive element 100 and the common switching element 140.

[0097] Figure 3 This is a cross-sectional view of the main parts of the magnetic recording array 200 according to the first embodiment. Figure 3 It is the cross section when the magnetoresistive element 100 is cut off by the xz plane, which is the center of the width of the wiring 20 in the y direction described later.

[0098] Figure 3 The first switching element 110 and the second switching element 120 shown are transistors Tr. The third switching element 130 is electrically connected to the conductive layer E, for example, located at... Figure 3 The y-direction. The transistor Tr is, for example, a field-effect transistor, having a gate electrode G, a gate insulating film GI, and source electrodes S and drain electrodes D formed on a substrate Sub. The substrate Sub is, for example, a semiconductor substrate.

[0099] The transistor Tr and the magnetoresistive element 100 are electrically connected via a first conductive portion 30 or a second conductive portion 40. Furthermore, the transistor Tr is connected to the write wiring Wp or the common wiring Cm via a conductive portion Cw. The first conductive portion 30, the second conductive portion 40, and the conductive portion Cw are sometimes referred to as connection wiring or via wiring. The first conductive portion 30, the second conductive portion 40, and the conductive portion Cw extend, for example, along the z-direction.

[0100] The magnetoresistive element 100 and the transistor Tr are surrounded by an insulating layer 90. The insulating layer 90 is used to insulate between wirings in a multilayer wiring system or between components. The insulating layer 90 is, for example, silicon oxide (SiO2). x ), silicon nitride (SiN) x Silicon carbide (SiC), chromium nitride, silicon carbonitride (SiCN), silicon oxynitride (SiON), aluminum oxide (Al2O3), zirconium oxide (ZrO2) x )wait.

[0101] Figure 4 This is a cross-sectional view of the magnetoresistive effect element 100 according to the first embodiment. Figure 5 This is a top view of the magnetoresistive effect element 100 according to the first embodiment. Figure 4It is the cross section when the magnetoresistive element 100 is cut off by the xz plane, which is the center of the width of the wiring 20 in the y direction.

[0102] The magnetoresistive element 100 has a laminate 10 and wiring 20. Insulating layers 91 and 92 are part of insulating layer 90. The resistance in the z-direction of the laminate 10 is changed by injecting spin from wiring 20 into the laminate 10. The magnetoresistive element 100 is a spin element utilizing spin-orbit torque (SOT), and can be referred to as a spin-orbit torque type magnetoresistive element, a spin-injection type magnetoresistive element, or a spin-current magnetoresistive element. Furthermore, wiring 20 can be referred to as a spin-orbit torque wiring.

[0103] The laminate 10 is stacked on the wiring 20. Other layers are present between the laminate 10 and the wiring 20. The laminate 10 is sandwiched between the wiring 20 and the conductive layer E in the z-direction. The laminate 10 is electrically connected to the read wiring. The laminate 10 is cylindrical. Its top-view shape when viewed in the z-direction is, for example, circular, elliptical, or quadrilateral.

[0104] The laminate 10 has a first ferromagnetic layer 1, a second ferromagnetic layer 2, and a nonmagnetic layer 3. The first ferromagnetic layer 1 is in contact with, for example, wiring 20 and is laminated on wiring 20. Spin is injected from wiring 20 into the first ferromagnetic layer 1. The magnetization of the first ferromagnetic layer 1 is subjected to spin-orbit torque (SOT) due to the injected spin, and its orientation direction changes. The second ferromagnetic layer 2 is in the z-direction of the first ferromagnetic layer 1. The first ferromagnetic layer 1 and the second ferromagnetic layer 2 sandwich the nonmagnetic layer 3 in the z-direction.

[0105] The first ferromagnetic layer 1 and the second ferromagnetic layer 2 are each magnetized. The orientation of the magnetization of the second ferromagnetic layer 2 is less likely to change compared to the magnetization of the first ferromagnetic layer 1 when a specified external force is applied. There are cases where the first ferromagnetic layer 1 is referred to as a magnetized free layer, and the second ferromagnetic layer 2 is referred to as a magnetized fixed layer or a magnetized reference layer. The resistance of the laminate 10 varies depending on the relative angle of magnetization between the first ferromagnetic layer 1 and the second ferromagnetic layer 2, which are sandwiched between non-magnetic layers 3.

[0106] The first ferromagnetic layer 1 and the second ferromagnetic layer 2 contain ferromagnetic materials. Ferromagnetic materials may include, for example, metals selected from Cr, Mn, Co, Fe, and Ni; alloys containing one or more of these metals; or alloys containing these metals and at least one of the elements selected from B, C, and N. Examples of ferromagnetic materials include Co-Fe, Co-Fe-B, Ni-Fe, Co-Ho alloys, Sm-Fe alloys, Fe-Pt alloys, Co-Pt alloys, and CoCrPt alloys.

[0107] The first ferromagnetic layer 1 and the second ferromagnetic layer 2 may also contain Whistler alloys. Whistler alloys contain intermetallic compounds with a chemical composition of XYZ or X2YZ. X is a transition metal or noble metal element from the Co, Fe, Ni, or Cu group in the periodic table; Y is a transition metal from the Mn, V, Cr, or Ti group, or an element of X; and Z is a typical element from Groups III to V. Examples of Whistler alloys include Co2FeSi, Co2FeGe, Co2FeGa, Co2MnSi, and Co2Mn. 1-a Fe a Al b Si 1-b Co2FeGe 1-c Ga c Etc. Whistler alloys have high spin polarization.

[0108] The laminate 10 may also have an antiferromagnetic layer on the side of the second ferromagnetic layer 2 opposite to the non-magnetic layer 3, separated by a spacer layer. The second ferromagnetic layer 2, the spacer layer, and the antiferromagnetic layer constitute a synthetic antiferromagnetic structure (SAF structure). The synthetic antiferromagnetic structure consists of two magnetic layers sandwiching a non-magnetic layer. The second ferromagnetic layer 2 and the antiferromagnetic layer are coupled by antiferromagnetism, and the coercivity of the second ferromagnetic layer 2 is increased compared to the case without an antiferromagnetic layer. The antiferromagnetic layer is, for example, IrMn, PtMn, etc. The spacer layer contains, for example, at least one selected from Ru, Ir, and Rh.

[0109] The laminate 10 may also have layers other than the first ferromagnetic layer 1, the second ferromagnetic layer 2, and the nonmagnetic layer 3. For example, a base layer may be present between the wiring 20 and the laminate 10. The base layer improves the crystallinity of the layers constituting the laminate 10.

[0110] Wiring 20, for example, contacts one side of the laminate 10. Wiring 20 is a write wiring for writing data to the magnetoresistive element 100. Wiring 20 extends in the x-direction. At least a portion of wiring 20 sandwiches the first ferromagnetic layer 1 together with the non-magnetic layer 3 in the z-direction. The area of ​​the first surface 20a of wiring 20 away from the substrate Sub is, for example, smaller than the area of ​​the second surface 20b opposite to the first surface 20a. Wiring 20, for example, increases in circumference from the first surface 20a toward the second surface 20b.

[0111] The wiring 20 generates a spin current due to the spin Hall effect when a current I flows through it, injecting spin into the first ferromagnetic layer 1. For example, the wiring 20 applies a spin-orbit torque (SOT) to the magnetization of the first ferromagnetic layer 1, capable of reversing the magnetization. The spin Hall effect is the phenomenon of spin current being generated in a direction orthogonal to the direction of current flow based on spin-orbit interaction when a current flows through it. The spin Hall effect is the same as the ordinary Hall effect in that the direction of motion of the moving charges (electrons) is bent. In the ordinary Hall effect, the direction of motion of a charged particle moving in a magnetic field is bent by the Lorentz force. In contrast, in the spin Hall effect, even in the absence of a magnetic field, the direction of spin movement is bent solely by the movement of electrons (current flow).

[0112] For example, when current flows through wiring 20, the first spin oriented in one direction and the second spin oriented in the opposite direction to the first spin bend in a direction orthogonal to the direction of current I through the spin Hall effect. For example, the first spin oriented in the -y direction bends in the +z direction, and the second spin oriented in the +y direction bends in the -z direction.

[0113] In nonmagnetic materials (materials that are not ferromagnetic), the number of electrons with the first spin and the second spin, generated by the spin Hall effect, are the same. That is, the number of electrons with the first spin in the +z direction is the same as the number of electrons with the second spin in the -z direction. The first and second spins flow in the direction that eliminates spin inhomogeneity. Since the flow of charge cancels each other out during the movement of the first and second spins in the z direction, the current is zero. In particular, the spin current without accompanying current is called a pure spin current.

[0114] If the flow of electrons with the first spin is represented as J ↑ The flow of electrons with the second spin is represented as J. ↓ When representing spin flow as JS, it is defined as J S =J ↑ -J ↓ A spin flow J is generated in the z-direction. S The first spin is injected from wiring 20 into the first ferromagnetic layer 1.

[0115] Wiring 20 includes any one of the following: metal, alloy, intermetallic compound, metal boride, metal carbide, metal silicide, and metal phosphide, which has the function of generating spin current due to the spin Hall effect when current I flows.

[0116] The wiring 20 may contain, for example, a non-magnetic heavy metal as the main element. The main element is the element with the highest proportion among the elements constituting the wiring 20. The wiring 20 may contain, for example, at least any element selected from W, Ta, Pt, Mo, Ir, Zr, Re, Y, Os, Ru, Rh, Pd, and Mn. These elements have strong spin-orbit interactions due to having d or f electrons in their outermost shell, resulting in increased spin injection into the first ferromagnetic layer 1.

[0117] Wiring 20 may also contain magnetic metal. Magnetic metal is either ferromagnetic or antiferromagnetic. The trace amounts of magnetic metal contained in a non-magnetic body become a spin scattering factor. A trace amount, for example, means less than 3% of the total molar ratio of the elements constituting wiring 20. When spin is scattered by the magnetic metal, spin-orbit interaction is enhanced, and the efficiency of spin current generation relative to electric current becomes higher.

[0118] Wiring 20 may also include topological insulators. A topological insulator is a material whose interior is an insulator or high-resistivity material, but whose surface exhibits a spin-polarized metallic state. Topological insulators generate an internal magnetic field due to spin-orbit interactions. Even without an external magnetic field, topological insulators can generate new topological phases due to the effects of spin-orbit interactions. Topological insulators can efficiently generate pure spin currents due to strong spin-orbit interactions and the breaking of inversion symmetry at their edges.

[0119] Topological insulators include SnTe and Bi. 1.5 Sb 0.5 Te 1.7 Se 1.3 ,TlBiSe2,Bi2Te3,Bi 1-x Sb x 、(Bi 1-x Sb x )2Te3, etc. Topological insulators can efficiently generate spin currents.

[0120] In a top view from the z-direction, the first conductive portion 30 and the second conductive portion 40 sandwich the laminate 10 in the x-direction. The first conductive portion 30 and the second conductive portion 40 are wirings that connect the magnetoresistive effect element 100 to the transistor Tr. The first conductive portion 30 and the second conductive portion 40, for example, electrically connect components or wiring located on different layers.

[0121] The first conductive part 30 and the second conductive part 40 are made of a material with excellent conductivity. The first conductive part 30 and the second conductive part 40 may contain, for example, any one selected from Ag, Cu, Co, Al, and Au.

[0122] The magnetoresistive element 100 can be formed by a layer stacking process and a process of machining a portion of each layer into a specified shape. The layer stacking can be performed using sputtering, chemical vapor deposition (CVD), electron beam evaporation (EB evaporation), atomic laser deposition, etc. The machining of each layer can be performed using photolithography, etc.

[0123] First, impurities are doped at designated locations on the substrate Sub to form the source (S) and drain (D). Next, a gate insulating film (GI) and a gate electrode (G) are formed between the source (S) and drain (D). The source (S), drain (D), gate insulating film (GI), and gate electrode (G) together form the transistor Tr.

[0124] Next, an insulating layer 91 is formed to cover the transistor Tr. Furthermore, by forming openings in the insulating layer 91 and filling the openings with conductors, a first conductive portion 30, a second conductive portion 40, and a conductive portion Cw can be formed. The wiring Wp and the common wiring Cm are formed by stacking the insulating layer 91 to a predetermined thickness, forming grooves in the insulating layer 91, and filling the grooves with conductors.

[0125] Next, a wiring layer, a ferromagnetic layer, a non-magnetic layer, and a ferromagnetic layer are sequentially stacked on the surfaces of the insulating layer 91, the first conductive portion 30, and the second conductive portion 40. The wiring layer is then processed into a predetermined shape. The wiring layer becomes wiring 20 by being processed into a predetermined shape. Next, by processing the laminate formed on the wiring layer into a predetermined shape, a laminate 10 is formed, thereby enabling the fabrication of a magnetoresistive element 100.

[0126] Next, the operation of the magnetoresistive element 100 according to the first embodiment will be described. The magnetoresistive element 100 has a data writing operation and a data reading operation.

[0127] First, the operation of recording data to the magnetoresistive effect element 100 will be explained. First, the first switching element 110 and the second switching element 120, which are connected to the magnetoresistive effect element 100 to which data is to be recorded, are turned on. When the first switching element 110 and the second switching element 120 are turned on, a write current flows into the write lines Wp1 to Wp1. n With shared wiring Cm1~Cm n The wiring 20 between the layers. When a write current flows through the wiring 20, a spin Hall effect occurs, and spins are injected into the first ferromagnetic layer 1. The spins injected into the first ferromagnetic layer 1 exert a spin-orbit torque (SOT) on the magnetization of the first ferromagnetic layer 1, changing the orientation direction of the magnetization of the first ferromagnetic layer 1. When the direction of current flow is reversed, the direction of the spins injected into the first ferromagnetic layer 1 is reversed, thus the orientation direction of the magnetization can be freely controlled.

[0128] The resistance value in the stacking direction of the laminate 10 decreases when the magnetization of the first ferromagnetic layer 1 is parallel to the magnetization of the second ferromagnetic layer 2, and increases when the magnetization of the first ferromagnetic layer 1 is antiparallel to the magnetization of the second ferromagnetic layer 2. This resistance value in the stacking direction of the laminate 10 is recorded in the magnetoresistive effect element 100.

[0129] Next, the operation of reading data from the magnetoresistive element 100 will be explained. First, the first switching element 110, the second switching element 120, and the third switching element 130 connected to the magnetoresistive element 100 to which data is to be recorded are turned on (ON). When each switching element is set in this way, the data is read from the common wiring Cm1 to Cm2. n With read wiring Rp1~Rp n A read current flows through the stacking direction of the stacked bodies 10. According to Ohm's law, the output voltage differs when the resistance in the stacking direction of the stacked bodies 10 is different. Therefore, for example, by reading the voltage in the stacking direction of the stacked bodies 10, data recorded in the magnetoresistive element 100 can be read.

[0130] In the magnetic recording array 200 of the first embodiment, the common wiring Cm1 to Cm n When the resistance is low, the common wiring Cm1~Cm n Electromigration (EM) is difficult to occur, and degradation is not easily achieved. Generally speaking, the common wiring Cm1~Cm n In the write and read operations of the spin element, it is used for both writing and reading, therefore it is associated with the write wiring Wp1~Wp n And read wiring Rp1~Rp n In contrast, they generally tend to deteriorate easily. In the magnetic recording array 200 of the first embodiment, it is considered that common wiring Cm1 to Cm is unlikely to occur. n The reason for electromigration (EM) is the reduced probability of void formation, which is one of the causes of EM. Void formation is caused by ion movement, and the force exerted on the ions is defined by the Hungtington model. According to this model, with a constant write current, the probability of void formation can be reduced by decreasing the force exerted on the ions by decreasing the resistance. This tendency is observed in the common wiring Cm1~Cm n The same applies when the cross-sectional area relative to the direction of current application is large, and when the resistivity is low.

[0131] Furthermore, in the magnetic recording array 200 of the first embodiment, the common wiring Cm1 to Cm n The resistance ratio is written into the wiring Wp1~Wp n And read wiring Rp1~Rp nLow, and written to wiring Wp1~Wp n The resistance ratio is read from the wiring Rp1~Rp n In low-temperature conditions, the common wiring Cm1~Cm n More reliable and less prone to degradation. Furthermore, because compared to reading wiring Rp1~Rp n Write the wiring with a larger current flow into the wiring Wp1~Wp. n The resistance is low, so it is written into wiring Wp1~Wp n It is less prone to degradation, thus extending the lifespan of the magnetic recording array 200. This tendency is evident in the write lines Wp1 to Wp. n The cross-sectional area ratio relative to the direction of current application is used to read the wiring Rp1~Rp. n In large cases, and writing to wiring Wp1~Wp n The resistivity ratio of the wiring Rp1 to Rp n The same applies in low-temperature conditions.

[0132] Furthermore, in the magnetic recording array 200 of the first embodiment, the common wiring Cm1 to Cm n The resistance ratio is written into the wiring Wp1~Wp n And read wiring Rp1~Rp n Low, read wiring Rp1~Rp n The resistance ratio is written into the wiring Wp1~Wp n In low-temperature conditions, the common wiring Cm1~Cm n More reliably, it is less prone to degradation. Furthermore, because the wiring Rp1~Rp... n The low resistance of the magnetoresistive element 100 further improves its MR ratio. This tendency is evident when reading wiring Rp1 to Rp. n The cross-sectional area ratio relative to the direction of current application is written into the wiring Wp1~Wp n In large cases, and when reading the resistivity of the wiring compared to writing to the wiring Wp1~Wp n The same applies in low-temperature conditions.

[0133] In the magnetic recording array 200 of the first embodiment, the common wiring Cm1 to Cm n When the activation energy is high, the common wiring Cm1~Cm n It becomes less prone to degradation. Generally, the known wiring life can be calculated using Black's empirical formula. According to this formula, the common wiring Cm1~Cm n When selecting materials with high activation energy, the wiring Cm1~Cm is shared. n The lifespan is extended. In the magnetic recording array 200 of the first embodiment, the common wiring Cm1 to Cm2 is used. nBy incorporating materials with activation energies of 300 kJ / mol or higher, lifetime is reliably improved. Furthermore, the shared wiring Cm1~Cm n By including at least one metal selected from Si, Ti, Cr, Ta, W and Ir, the lifespan is reliably improved.

[0134] Implementation Method 2

[0135] Figure 6 This is a cross-sectional view of the magnetized rotating element 101 in the second embodiment. Figure 6 The cross-section is obtained by cutting the magnetizing rotating element 101 with an xz plane that passes through the center of the width in the y direction of the wiring 20. The magnetizing rotating element 101 of the second embodiment differs from the magnetoresistive effect element 100 of the first embodiment in that it does not have a non-magnetic layer 3 and a second ferromagnetic layer 2. The other structures are the same as those of the magnetoresistive effect element 100 of the first embodiment, and the description is omitted.

[0136] The magnetization rotation element 101 is an example of a spin element. For example, the magnetization rotation element 101 evaluates the light reflected from the first ferromagnetic layer 1 when incident light is received from the first ferromagnetic layer 1. When the orientation direction of magnetization changes due to the magnetoptical Kerr effect, the deflection state of the reflected light changes. The magnetization rotation element 101 can be used, for example, as an optical element in an image display device that utilizes the difference in the deflection state of light.

[0137] In addition, the magnetized rotating element 101 can also be used independently as an anisotropic magnetic sensor, an optical element utilizing the magnetic Faraday effect, etc.

[0138] The magnetizing rotating element 101 of the second embodiment only removes the non-magnetic layer 3 and the second ferromagnetic layer 2, and can obtain the same effect as the magnetoresistive effect element 100 of the first embodiment. In addition, the same variant as the magnetoresistive effect element 100 of the first embodiment can be selected.

[0139] Third implementation method

[0140] Figure 7 This is a cross-sectional view of the magnetoresistive effect element 102 in the third embodiment. Figure 7 The cross-section is obtained by cutting the magnetoresistive element 102 with an xz plane passing through the center of the width of the wiring 21 in the y direction. The magnetoresistive element 102 differs from the magnetoresistive element 100 in that the laminate 11 is composed of a non-magnetic layer 5 and a first ferromagnetic layer 4 from the side closest to the wiring 21. For structures identical to those of the magnetoresistive element 100, the same reference numerals are given, and descriptions are omitted.

[0141] The magnetoresistive effect element 102 includes a laminate 11, wiring 21, a first conductive portion 30, and a second conductive portion 40. The laminate 11 is composed of a non-magnetic layer 5 and a first ferromagnetic layer 4 from the side closest to the wiring 21. The magnetoresistive effect element 102 is an element whose resistance value changes according to the movement of the domain wall DW, and is sometimes referred to as a domain wall moving element or a domain wall moving type magnetoresistive effect element.

[0142] Wiring 21 is a magnetic layer. Wiring 21 contains a ferromagnetic material. The magnetic material constituting wiring 21 can be a metal selected from Cr, Mn, Co, Fe, and Ni, an alloy containing one or more of these metals, or an alloy containing these metals and at least one of the elements B, C, and N. Specifically, examples include Co-Fe, Co-Fe-B, and Ni-Fe.

[0143] Wiring 21 is a layer capable of magnetically recording information using changes in its internal magnetic state. Wiring 21 internally has a first magnetic region 21A and a second magnetic region 21B. The magnetization of the first magnetic region 21A and the magnetization of the second magnetic region 21B are, for example, oriented in opposite directions. The boundary between the first magnetic region 21A and the second magnetic region 21B is a domain wall DW. Wiring 21 can internally have a domain wall DW.

[0144] The magnetoresistive element 102 can record data in multiple or continuously using the position of the domain wall DW of the wiring 21. The data recorded by the wiring 21 is read as a change in the resistance of the magnetoresistive element 102 when a read current is applied.

[0145] The domain wall DW moves by the flow of a write current in the x-direction of wiring 21 or by the application of an external magnetic field. For example, when a write current (e.g., a current pulse) is applied in the +x direction of wiring 21, the domain wall DW moves in the -x direction because electrons flow in the opposite direction to the current. When a current flows from the first magnetic region 21A toward the second magnetic region 21B, the spin-polarized electrons in the second magnetic region 21B cause the magnetization of the first magnetic region 21A to be reversed. By reversing the magnetization of the first magnetic region 21A, the domain wall DW moves in the -x direction.

[0146] The first ferromagnetic layer 4 and the non-magnetic layer 5 are each the same as the first ferromagnetic layer 1 and the non-magnetic layer 3 in the first embodiment.

[0147] The magnetoresistive element 102 of the third embodiment can also achieve the same effect as the magnetoresistive element 100 of the first embodiment. In addition, the same variant as the magnetoresistive element 100 of the first embodiment can be selected.

[0148] Implementation Method 4

[0149] Figure 8This is a perspective view of the reservoir element 103 according to the fourth embodiment. The reservoir element 103 includes a plurality of magnetized rotating elements 101 and a spin-conducting layer 70 connecting the plurality of magnetized rotating elements 101 to the first ferromagnetic layers 1. The spin-conducting layer 70 is, for example, made of a non-magnetic conductor. The spin-conducting layer 70 transmits the spin flow that seeps out from the first ferromagnetic layer 1.

[0150] A reservoir element is a component used in a reservoir computer as a neuromorphic element. A neuromorphic element is a component that uses neural networks to mimic the human brain. A neuromorphic element is used, for example, as a recognizer. A recognizer, for example, identifies (image recognition) an input image and classifies it.

[0151] The reservoir element 103 converts the input signal into other signals. Within the reservoir element 103, the signals only interact and do not learn. When the input signals interact with each other, the input signals change non-linearly. That is, the input signals retain source information while simultaneously replacing the source information with other signals. The input signals change over time by interacting with each other within the reservoir element 103. In the reservoir element 103, the first ferromagnetic layers 1 corresponding to multiple neurons are interconnected. Therefore, for example, there is a case where a signal output from a neuron at a certain time t returns to the original neuron at a certain time t+1. Within the neuron, signal processing based on time t and time t+1 is possible, enabling regressive information processing.

[0152] The spin-conducting layer 70 is, for example, a metal or a semiconductor. The metal used for the spin-conducting layer 70 is, for example, a metal or alloy containing any element selected from Cu, Ag, Al, Mg, and Zn. The semiconductor used for the spin-conducting layer 70 is, for example, a monomer or alloy of any element selected from Si, Ge, GaAs, and C. Examples include Si, Ge, Si-Ge compounds, GaAs, and graphene.

[0153] When a current I flows in wiring 20, a spin is injected into the first ferromagnetic layer 1, applying a spin-orbit torque to the magnetization of the first ferromagnetic layer 1. When a high-frequency current is applied to wiring 20, the direction of the spin injected into the first ferromagnetic layer 1 changes, and the magnetization of the first ferromagnetic layer 1 oscillates.

[0154] The spin current flows from the first ferromagnetic layer 1 to the spin conduction layer 70. Because the magnetization of the first ferromagnetic layer 1 causes it to vibrate, the spin current flowing in the spin conduction layer 70 also vibrates in accordance with the magnetization. The spin accumulated at the interface between the first ferromagnetic layer 1 and the spin conduction layer 70 is transmitted as a spin current within the spin conduction layer 70.

[0155] The spin currents generated by the magnetization of the two first ferromagnetic layers 1 converge and interfere within the spin conduction layer 70. The interference of the spin currents affects the vibration of the magnetization of their respective first ferromagnetic layers 1, causing the vibrations of the two first ferromagnetic layers 1 to resonate. The vibrations of the two magnetizations are either synchronized or staggered by half a wavelength (π).

[0156] When the current I applied to wiring 20 is stopped, the magnetization vibration of the first ferromagnetic layer 1 ceases. After resonance, the magnetization of the first ferromagnetic layer 1 can be parallel or antiparallel. When the phases of the two vibrations are synchronized, the directions of the two magnetizations are aligned and become parallel. When the phases of the two vibrations are offset by half a wavelength (π), the directions of the two magnetizations are opposite and become antiparallel.

[0157] When the magnetization of the two first ferromagnetic layers 1 is parallel, the resistance of the reservoir element 103 becomes smaller than when they are antiparallel. For example, when the resistance of the reservoir element 103 is larger (when the two magnetizations are antiparallel), it outputs a "1" signal, and when it is smaller (when the two magnetizations are parallel), it outputs a "0" signal.

[0158] The current I input to wiring 20 has various information. For example, it has the frequency, current density, and current quantity of current I. On the other hand, the reservoir element 103 outputs "1" and "0" information as resistance values. That is, the reservoir element 103 of the first embodiment converts the magnetization vibration of the plurality of first ferromagnetic layers 1 into a spin current, and converts the information by interfering within the spin conduction layer 70.

[0159] The reservoir element 103 of the fourth embodiment includes the magnetic recording array 200 of the first embodiment and is able to achieve the same effects as the first embodiment.

[0160] Thus far, preferred embodiments of the present invention have been illustrated based on embodiments 1 to 4, but the present invention is not limited to these embodiments. For example, the feature structures of each embodiment may be applied to other embodiments.

[0161] Furthermore, in the magnetic recording array 200 of this embodiment 1, write lines Wp1 to Wp n With read wiring Rp1~Rp n Extending in the same direction, sharing wiring Cm1 to Cm n Along and write wiring Wp1~Wp n and read wiring Rp1~Rp n The wiring extends in mutually orthogonal directions, but the direction of each wiring is not limited to this. For example, it can also be configured such that wirings Wp1 to Wp are written. n Extending in one direction, read wiring Rp1~Rp nExtending in a direction different from this one, sharing wiring Cm1 to Cm n Along and write wiring Wp1~Wp n Extension direction and reading wiring Rp1~Rp n The extension directions are different. In this case, it is preferable to write the wiring Wp1 to Wp n Extend along the x-direction and read wiring Rp1 to Rp n Extending along the y-direction.

Claims

1. A magnetic recording array, wherein, have: Multiple spin elements, each having wiring and a stack containing a first ferromagnetic layer stacked on the wiring, are arranged in a matrix; Multiple write lines are connected to the first end of the respective write lines of the multiple spin elements; Multiple readout wirings are connected to the stack of each of the multiple spin elements; as well as Multiple common wirings are connected to the second end of the wirings of individual spin elements belonging to the same column. The resistance of the shared wiring is lower than that of the write wiring or the read wiring. The resistance of the shared wiring is lower than that of the write wiring and the read wiring, and the resistance of the read wiring is lower than that of the write wiring.

2. The magnetic recording array as claimed in claim 1, wherein, The cross-sectional area of ​​the common wiring relative to the direction of current application is larger than that of the write wiring or the read wiring.

3. The magnetic recording array as described in claim 2, wherein, The cross-sectional area of ​​the common wiring relative to the direction of current application is larger than that of the write wiring and the read wiring, and the cross-sectional area of ​​the write wiring relative to the direction of current application is larger than that of the read wiring.

4. The magnetic recording array as described in claim 2, wherein, The cross-sectional area of ​​the common wiring relative to the direction of current application is larger than that of the write wiring and the read wiring, and the cross-sectional area of ​​the read wiring relative to the direction of current application is larger than that of the write wiring.

5. The magnetic recording array as claimed in claim 1, wherein, The resistivity of the common wiring is lower than that of the write wiring or the read wiring.

6. The magnetic recording array as claimed in claim 5, wherein, The resistivity of the common wiring is lower than that of the write wiring and the read wiring, and the resistivity of the write wiring is lower than that of the read wiring.

7. The magnetic recording array as claimed in claim 5, wherein, The resistivity of the common wiring is lower than that of the write wiring and the read wiring, and the resistivity of the read wiring is lower than that of the write wiring.

8. A magnetic recording array, wherein, have: Multiple spin elements, each having wiring and a stack containing a first ferromagnetic layer stacked on the wiring, are arranged in a matrix; Multiple write lines are connected to the first end of the respective write lines of the multiple spin elements; Multiple readout wirings are connected to the stack of each of the multiple spin elements; as well as Multiple common wirings are connected to the second end of the wirings of individual spin elements belonging to the same column. The activation energy of the shared wiring is higher than that of the write wiring or the read wiring.

9. The magnetic recording array as claimed in claim 8, wherein, The activation energy of the shared wiring is higher than that of the write wiring and the read wiring, and the activation energy of the write wiring is higher than that of the read wiring.

10. The magnetic recording array of claim 8, wherein, The activation energy of the shared wiring is higher than that of the write wiring and the read wiring, and the activation energy of the read wiring is higher than that of the write wiring.

11. The magnetic recording array as claimed in any one of claims 8, wherein, The shared wiring contains materials with an activation energy of 300 kJ / mol or higher.

12. The magnetic recording array as claimed in any one of claims 8, wherein, The common wiring comprises at least one metal selected from Si, Ti, Cr, Ta, W and Ir.

13. The magnetic recording array as claimed in any one of claims 1 to 12, wherein, The write wiring extends in one direction, the read wiring extends in a direction different from the one direction, and the common wiring extends in a direction different from the extension direction of the write wiring and the extension direction of the read wiring.

14. The magnetic recording array as claimed in any one of claims 1 to 12, wherein, The wiring of the spin element and the common wiring are connected via a control element.

15. The magnetic recording array as claimed in any one of claims 1 to 12, wherein, The wiring is any one of metals, alloys, intermetallic compounds, metal borides, metal carbides, metal silicides, and metal phosphides that has the function of generating spin current using the spin Hall effect when current flows.

16. The magnetic recording array as claimed in any one of claims 1 to 12, wherein, The laminate, starting from the side closest to the wiring, includes a non-magnetic layer and the first ferromagnetic layer. The wiring is a ferromagnetic layer capable of having magnetic domain walls inside.

17. A reservoir element, wherein, have: The magnetic recording array according to any one of claims 1 to 16; and A spin conduction layer that connects the first ferromagnetic layer of the plurality of spin elements.

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