Micro LED display panel, manufacturing method thereof, and display device

Abstract

The present application provides a Micro LED display panel, a preparation method thereof, and a display device, relating to the field of display technology. The Micro LED display panel includes: an array substrate having a driving circuit; a Micro LED layer, the Micro LED layer being arranged opposite to the array substrate and bonded to the driving circuit of the array substrate so that the driving circuit controls the Micro LED layer to display an image; and a light absorbing layer, the light absorbing layer being located between the array substrate and the Micro LED layer. The light absorbing layer can absorb stray light between the Micro LED layer and the array substrate through the light absorbing effect of the light absorbing layer and the position of the light absorbing layer, thereby improving the contrast of the Micro LED display panel.

Description

Technical Field

[0001] The present application relates to the field of display technology, and more specifically, to a Micro LED display panel, a preparation method thereof, and a display device. Background Art

[0002] Micro LED technology, or LED miniaturization and matrix technology, refers to a high-density, tiny LED array integrated on a single chip. In the new micro-display field, the Micro LED array can be connected to an array substrate to achieve high-resolution and high-brightness displays. Compared with other existing micro-display technologies, it has advantages such as low power consumption, high contrast, high stability, and high color protection. In fact, because the light-emitting layer of the LED pixels in Micro LED radiates light to the upper and lower sides, the microcavity effect between the Micro LED array and the array substrate causes the light emitted by the LED to be reflected multiple times between the two layers, forming stray light, which affects the contrast of the final display. Summary of the Invention

[0003] The purpose of this application is to address the deficiencies in the above-mentioned prior art and provide a Micro LED display panel and its preparation method, as well as a display device, which can effectively reduce the stray light between the Micro LED array and the array substrate and effectively improve the contrast of the Micro LED display panel.

[0004] To achieve the above objectives, the technical solutions adopted in the embodiments of the present application are as follows:

[0005] In one aspect of an embodiment of the present application, a Micro LED display panel is provided, comprising: an array substrate having a driving circuit; a Micro LED layer, the Micro LED layer being arranged opposite to the array substrate and bonded to the driving circuit of the array substrate so that the driving circuit controls the Micro LED layer to display an image; and a light absorbing layer, the light absorbing layer being located between the array substrate and the Micro LED layer.

[0006] Optionally, the array substrate includes a display area and a non-display area located outside the display area, and the light absorption layer at least covers the display area.

[0007] Optionally, the light absorbing layer is an insulating layer; or the material of the light absorbing layer is an inorganic material; or the material of the light absorbing layer is an organic material.

[0008] Optionally, the driving circuit is distributed in the display area and the non-display area, the driving circuit located in the display area includes a driving pixel electrode, and the driving circuit located in the non-display area includes a common electrode; the Micro LED layer includes a first electrode corresponding to the display area and a second electrode corresponding to the non-display area, the first electrode is electrically connected to the driving pixel electrode through a first pad, and the second electrode is electrically connected to the common electrode through a second pad.

[0009] Optionally, the material of the first pad and / or the second pad is one of tin, indium, copper and gold.

[0010] Optionally, the Micro LED layer further includes a substrate arranged opposite to the array substrate and an epitaxial layer arranged on a side of the substrate close to the array substrate, and the first electrode and the second electrode are arranged at intervals on a side of the epitaxial layer close to the array substrate.

[0011] Optionally, the driving circuit includes a plurality of driving pixel electrodes; the epitaxial layer includes an n-GaN layer arranged on a substrate and a plurality of pixel stacks spaced apart on the n-GaN layer; the Micro LED layer includes a plurality of first electrodes corresponding one-to-one to the plurality of driving pixel electrodes, and the plurality of first electrodes are respectively arranged one-to-one in the plurality of pixel stacks.

[0012] Optionally, each pixel stack includes a quantum well, a p-GaN layer, and a current spreading layer sequentially arranged on the n-GaN layer, and the first electrode is arranged on the current spreading layer.

[0013] Optionally, the material of the current spreading layer is one of indium tin oxide, nickel / gold, zinc oxide, graphene, aluminum and metal nanowires.

[0014] Optionally, the Micro LED display panel further includes a frame sealant located between the array substrate and the Micro LED layer, and the frame sealant ring is arranged on the periphery of the light absorbing layer.

[0015] Another aspect of an embodiment of the present application provides a method for preparing a Micro LED display panel, the method comprising: providing an array substrate and a Micro LED layer relative to each other, the array substrate having a driving circuit; aligning and connecting the Micro LED layer to the array substrate through a flip-chip process so that the Micro LED layer is bonded to the driving circuit of the array substrate; and filling a light absorbing layer between the array substrate and the Micro LED layer.

[0016] Optionally, the light absorbing layer is an inorganic material, and filling the light absorbing layer between the array substrate and the Micro LED layer includes: depositing the light absorbing layer on one side of the array substrate; forming a pad window on the light absorbing layer by etching, so that the electrode of the driving circuit is exposed in the pad window;

[0017] Aligning and connecting the Micro LED layer to the array substrate using a flip-chip process includes: depositing a third pad connected to an electrode of the driving circuit within a pad window; depositing a fourth pad on one side of the Micro LED layer; and aligning and bonding the fourth pad on the Micro LED layer to the third pad on the array substrate;

[0018] The method further includes applying a sealing glue around the periphery of the light absorbing layer between the Micro LED layer and the array substrate.

[0019] Optionally, the light absorbing layer is an organic material, and aligning and connecting the Micro LED layer to the array substrate through a flip-chip process includes: depositing a third pad connected to an electrode of the driving circuit on one side of the array substrate; depositing a fourth pad on one side of the Micro LED layer; and aligning and bonding the fourth pad on the Micro LED layer to the third pad on the array substrate.

[0020] Filling the light absorbing layer between the array substrate and the Micro LED layer includes: applying a frame sealant surrounding the periphery of the display area between the Micro LED layer and the array substrate, wherein the frame sealant has a gap; filling the light absorbing layer into the space enclosed by the frame sealant through the gap by a vacuum infusion process; and sealing the gap with a sealing glue.

[0021] In another aspect of the embodiments of the present application, a display device is provided, comprising any one of the above-mentioned Micro LED display panels.

[0022] The beneficial effects of this application include:

[0023] The present application provides a Micro LED display panel, a preparation method thereof, and a display device. The Micro LED display panel includes: an array substrate having a driving circuit; a Micro LED layer, the Micro LED layer is arranged opposite to the array substrate, and the Micro LED layer is bonded to the driving circuit of the array substrate so that the driving circuit controls the Micro LED layer to display an image; and a light absorbing layer, the light absorbing layer is located between the array substrate and the Micro LED layer, so that the light absorbing effect of the light absorbing layer and the position of the light absorbing layer can absorb stray light between the Micro LED layer and the array substrate, thereby improving the contrast of the Micro LED display panel. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the following is a brief introduction to the drawings required for use in the embodiments. It should be understood that the following drawings only show certain embodiments of the present application and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other relevant drawings can be obtained based on these drawings without creative work.

[0025] Figure 1 This is one of the structural schematic diagrams of a Micro LED display panel provided in an embodiment of the present application;

[0026] Figure 2 This is one of the structural schematic diagrams of a Micro LED layer provided in an embodiment of the present application;

[0027] Figure 3 A schematic structural diagram of an array substrate provided in an embodiment of the present application;

[0028] Figure 4 This is a second structural diagram of a Micro LED display panel provided in an embodiment of the present application;

[0029] Figure 5 This is a second structural diagram of a Micro LED layer provided in an embodiment of the present application;

[0030] Figure 6 A schematic diagram of a process for preparing a Micro LED display panel provided in an embodiment of the present application.

[0031] Icon: 110-array substrate; 111-common electrode; 112-display area; 120-substrate; 130-Micro LED layer; 131-n-GaN layer; 132-quantum well; 133-p-GaN layer; 134-current spreading layer; 135-first electrode; 136-second electrode; 137-dielectric layer; 138-window; 139-pixel stack; 140-light-absorbing layer; 150-frame sealing glue; 160-first pad; 161-fourth pad; 162-third pad; 170-second pad. DETAILED DESCRIPTION

[0032] To make the objectives, technical solutions, and advantages of the embodiments of the present application more clear, the technical solutions of the embodiments of the present application will be clearly and completely described below in conjunction with the accompanying drawings of the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, not all of the embodiments. Generally, in the absence of conflict, the various features of the embodiments of the present application can be combined with each other, and the combined embodiments are still within the scope of protection of the present application.

[0033] In the description of this application, it should be noted that the terms "center," "upper," "lower," "left," "right," "inner," and "outer," etc., are used solely to facilitate description and simplify the description of this application and are not to be construed as limiting this application. Furthermore, the terms "first," "second," and "third," etc., are used solely to distinguish descriptions and are not to be construed as indicating or implying relative importance.

[0034] It should also be noted that, in the description of this application, unless otherwise expressly specified or limited, the terms "disposed," "installed," "connected," and "connected" should be understood in a broad sense. For example, they can refer to fixed connections, detachable connections, or integral connections; they can refer to mechanical connections or electrical connections; they can refer to direct connections or indirect connections through an intermediate medium; and they can refer to internal connections between two components. Those skilled in the art will understand the specific meanings of the above terms in this application based on the specific circumstances.

[0035] Micro LED's high contrast ratio is reflected in its self-luminescence, which allows for independent control of the brightness of individual LED pixel arrays, achieving ultra-high black-to-white contrast. However, actual image display not only involves pure black and white, but also includes various grayscales, text, and complex images within each pixel. Therefore, improving the contrast ratio of Micro LED pixel arrays is crucial to improving overall contrast.

[0036] The present application provides a display device and a Micro LED display panel used in the display device. The Micro LED display panel can improve the contrast of the Micro LED display panel by effectively reducing stray light between the Micro LED layer 130 and the array substrate 110.

[0037] The display device can be any display device such as a smart phone, a tablet computer, a wearable device, a car computer, a desktop computer, a laptop computer, a smart TV, etc., and the embodiments of the present application are not limited to this.

[0038] The display device may include a housing and a Micro LED display panel. The Micro LED display panel is mounted on the housing, and the display surface of the Micro LED display panel is the light emitting area of ​​the display device.

[0039] In this embodiment, the Micro LED display panel is used to display corresponding image information for user viewing. Furthermore, the Micro LED display panel may also have a touch layer to recognize user operations, thereby enabling the displayed image information to change accordingly, thereby enabling the display device to have human-computer interaction capabilities.

[0040] It should be clear that this application does not limit the specific structure of the display device, as long as the display device has a MicroLED display panel that can display image information.

[0041] See also Figure 1 As shown, it is a Micro LED display panel provided by an embodiment of the present application, including: an array substrate 110, a Micro LED layer 130 and a light absorption layer 140, wherein the light absorption layer 140 is located between the array substrate 110 and the Micro LED layer 130, so that the stray light between the Micro LED layer 130 and the array substrate 110 can be absorbed by the light absorption effect of the light absorption layer 140 and the position of the light absorption layer 140, thereby improving the contrast of the Micro LED display panel.

[0042] The Micro LED layer 130 is a light-emitting layer in the Micro LED display panel, which is formed by a plurality of light-emitting pixel unit arrays.

[0043] The array substrate 110 is a substrate with a driving circuit. When the Micro LED layer 130 is electrically connected to the driving circuit on the array substrate 110, the driving circuit can provide a driving signal to the Micro LED layer 130, which controls the on / off switching of each light-emitting pixel unit in the Micro LED layer 130. It should be noted that when a light-emitting pixel unit is in the on state, it can emit light, and when it is in the off state, it does not emit light.

[0044] Please continue reading Figure 1 The Micro LED layer 130 is positioned opposite the array substrate 110 so that it can be directly bonded to the array substrate 110 via a flip chip process. This allows the Micro LED layer 130 to be electrically connected to the driving circuit. This allows the driving circuit to control the switching of each light-emitting pixel unit in the Micro LED layer 130 to display corresponding image information. A light absorption layer 140 is positioned between the array substrate 110 and the Micro LED layer 130. The light absorption effect and location of the light absorption layer 140 absorb stray light between the Micro LED layer 130 and the array substrate 110, thereby improving the contrast of the Micro LED display panel.

[0045] The light absorbing layer 140 can be located in the microcavity created by the flip chip connection between the Micro LED layer 130 and the array substrate 110. This allows the light absorbing layer 140 to be installed without increasing the thickness of the Micro LED display panel, helping to reduce design and production costs and facilitating rapid promotion.

[0046] See also Figure 2 As shown, the Micro LED layer 130 includes a display area 112 and a non-display area 112 , wherein the non-display area 112 is located at the periphery of the display area 112 , and the display area 112 has a corresponding array of light-emitting pixel units.

[0047] See also Figure 3 As shown, the array substrate 110 also includes a display area 112 and a non-display area 112 located outside the display area 112. The display area 112 of the array substrate 110 and the display area 112 of the Micro LED layer 130 overlap with each other from top to bottom, and the non-display area 112 of the array substrate 110 and the non-display area 112 of the Micro LED layer 130 also overlap with each other from top to bottom.

[0048] Since the Micro LED layer 130 emits light from both sides (perpendicular to the array substrate 110, with the direction from the Micro LED layer 130 to the array substrate 110 shown below) when actually emitting light, the light absorbing layer 140 can be configured in, but is not limited to, the following ways to reduce stray light between the Micro LED layer 130 and the array substrate 110:

[0049] In one embodiment, the light absorbing layer 140 can only cover the display area 112, that is, the light absorbing layer 140 is located directly below the display area 112 of the Micro LED layer 130. It can effectively absorb the radiated light from the lower side of the Micro LED layer 130, thereby reducing the stray light between the Micro LED layer 130 and the array substrate 110, thereby improving the contrast of the Micro LED display panel.

[0050] In another embodiment, the light absorbing layer 140 can cover the non-display area 112 and the display area 112, which can fully absorb the radiated light from the lower side of the Micro LED layer 130, thereby effectively reducing the stray light between the Micro LED layer 130 and the array substrate 110, thereby improving the contrast of the Micro LED display panel.

[0051] Optionally, the light absorbing layer 140 is an insulating layer, which can be mainly made of black non-conductive material.

[0052] Optionally, the light absorbing layer 140 is made of an inorganic material, such as titanium oxynitride or a titanium oxynitride-silicon dioxide composite material.

[0053] Optionally, the material of the light absorbing layer 140 may also be an organic material, such as aniline black, perylene-based materials, polyurethane-based materials, or a mixture of resin and black pigment.

[0054] Optional, see Figure 3 As shown, the driving circuit on the array substrate 110 is distributed in the display area 112 and the non-display area 112. The driving circuit located in the display area 112 includes a driving pixel electrode, and the driving circuit located in the non-display area 112 includes a common electrode 111. The driving pixel electrode and the common electrode 111 are both located on a side surface of the array substrate 110 close to the Micro LED layer 130, which facilitates the electrical connection between the Micro LED layer 130 and the driving circuit on the array substrate 110.

[0055] See also Figure 2 As shown, the Micro LED layer 130 includes a first electrode 135 located in the display area 112 and a second electrode 136 located in the non-display area 112. The first electrode 135 and the second electrode 136 are both located on a side surface of the Micro LED layer 130 close to the array substrate 110, which facilitates the electrical connection between the Micro LED layer 130 and the driving circuit on the array substrate 110.

[0056] Please refer to Figure 2 、 Figure 3 and Figure 4 When the Micro LED layer 130 is bonded to the array substrate 110 to be electrically connected to the driving circuit on the array substrate 110, the first electrode 135 of the display area 112 can be electrically connected to the driving pixel electrode of the display area 112 through the first pad 160. At the same time, the second electrode 136 of the non-display area 112 is electrically connected to the common electrode 111 of the non-display area 112 through the second pad 170. In this way, the Micro LED layer 130 is directly bonded to the array substrate 110 through the flip chip process, completing the electrical connection between the Micro LED layer 130 and the driving circuit.

[0057] It should be understood that when the Micro LED layer 130 is directly bonded to the array substrate 110 through the flip chip process, completing the electrical connection between the Micro LED layer 130 and the driving circuit, the occupied area of ​​the Micro LED display panel can be effectively reduced, meeting the miniaturization requirements of the device.

[0058] The first electrode 135 and the second electrode 136 can be formed by photolithography, evaporation, or lift-off.

[0059] Optionally, the material of the first pad 160 is one of tin, indium, copper and gold.

[0060] Optionally, the material of the second pad 170 is one of tin, indium, copper and gold.

[0061] Optional, please refer to Figure 2 and Figure 4 The Micro LED layer 130 also includes a substrate 120 and an epitaxial layer. The substrate 120 is disposed opposite the array substrate 110. The substrate 120 is a light-transmitting layer. This allows light radiated upward from the epitaxial layer in the Micro LED layer 130 to be smoothly emitted when the Micro LED display panel displays an image. The epitaxial layer is disposed on the side of the substrate 120 near the array substrate 110. A first electrode 135 and a second electrode 136 are spaced apart and disposed on the side of the epitaxial layer near the array substrate 110. The first electrode 135 and the second electrode 136 each form an ohmic contact with the epitaxial layer.

[0062] Optionally, the substrate 120 is one of sapphire, SiC, Si, AlN, GaN or quartz glass.

[0063] Optional, see Figure 2 As shown, after the first electrode 135 and the second electrode 136 are provided on the epitaxial layer, a prefabricated device is obtained, and then a dielectric layer 137 is formed on the surface of the prefabricated device on one side close to the array substrate 110 to cover the entire device. The dielectric layer 137 can well protect the prefabricated device. At the same time, the dielectric layer 137 can also be used to insulate and isolate the first electrode 135 and the second electrode 136 provided on the surface of the epitaxial layer.

[0064] See also Figure 2 As shown, in order to facilitate the electrical connection between the first electrode 135 and the second electrode 136 located between the dielectric layer 137 and the epitaxial layer and their corresponding driving pixel electrodes and common electrodes 111, the dielectric layer 137 can be etched to form a window 138 at the position corresponding to the dielectric layer 137 and the electrodes, so that each electrode can be exposed in the corresponding window 138, which is convenient for the deposition of the pad.

[0065] Optional, see Figure 3 As shown, there are multiple driving pixel electrodes, and the multiple driving pixel electrode arrays are distributed in the display area 112 , and the common electrode 111 is annular and located at the periphery of the display area 112 .

[0066] See also Figure 2As shown, the epitaxial layer includes an n-GaN layer 131 disposed on a substrate 120 and a plurality of pixel stacks 139 spaced apart on the n-GaN layer 131. Each pixel stack 139 corresponds to one of the aforementioned light-emitting pixel units. A first electrode 135 is disposed on the bottom surface of each pixel stack 139, forming an ohmic contact with the pixel stack 139. A second electrode 136 is disposed on the surface of the n-GaN layer 131 and forms an ohmic contact therewith.

[0067] See also Figure 4 As shown, the plurality of first electrodes 135 and the plurality of driving pixel electrodes are aligned one by one in the display area 112 , and each first electrode 135 is electrically connected to the corresponding driving pixel electrode through the first pad 160 .

[0068] See also Figure 5 As shown, the upward viewing angle of the Micro LED layer 130 shows that 24 first electrodes 135 (corresponding to 24 light-emitting pixel units) are distributed in an array in the middle display area 112. The 24 first electrodes 135 are arranged in 4 rows and 6 columns. Twenty second electrodes 136 are distributed in the non-display area 112 outside the display area 112. The 20 second electrodes 136 correspond to the aforementioned 4 rows and 6 columns, respectively. In this way, each light-emitting pixel unit can be controlled to be on or off through the first electrodes 135 and the second electrodes 136 in the rows and columns.

[0069] Optional, see Figure 2 As shown, each pixel stack 139 includes a quantum well 132, a p-GaN layer 133 and a current spreading layer 134 sequentially arranged on the n-GaN layer 131, a first electrode 135 is arranged on the current spreading layer 134, and the first electrode 135 forms an ohmic contact with the current spreading layer 134. The current spreading layer 134 can effectively improve the light extraction efficiency of the device. The formation of the pixel stack 139 can first form the quantum well 132, the p-GaN layer 133 and the current spreading layer 134 on the n-GaN layer 131 in sequence, and then define each pixel stack 139 by photolithography and etching, thereby forming a light-emitting pixel unit of the array.

[0070] Optionally, the first electrode 135 is a p-type electrode, and its material is Ni / Au, Cr / Au, Pt / Au or Ni / Al; the second electrode 136 is an n-type electrode, and its material is Al / Au, Cr / Au or Ti / Al / Ti / Au.

[0071] Optionally, the driving pixel electrode and the common electrode 111 may be made of Al or TiN.

[0072] Optionally, the material of the current spreading layer 134 is one of indium tin oxide, nickel / gold, zinc oxide, graphene, aluminum, and metal nanowires. The thickness of the current spreading layer 134 is 10 to 100 nm.

[0073] Optional, see Figure 1 As shown, the Micro LED display panel also includes a sealant 150 located between the array substrate 110 and the Micro LED layer 130. The sealant 150 is located in the non-display area 112 and is disposed around the periphery of the light absorbing layer 140. The formation and curing of the sealant 150 facilitates filling the light absorbing layer 140. Furthermore, the sealant 150 can seal the interior of the Micro LED display panel, thereby providing good protection.

[0074] Another aspect of the present invention provides a method for preparing a Micro LED display panel. Figure 6 As shown, the method includes:

[0075] S010: providing an array substrate 110 and a Micro LED layer 130 facing each other, wherein the array substrate 110 has a driving circuit.

[0076] S020: Aligning and connecting the Micro LED layer 130 and the array substrate 110 through a flip-chip process, so that the Micro LED layer 130 is bonded to the driving circuit of the array substrate 110 .

[0077] S030 : Filling the light absorption layer 140 between the array substrate 110 and the Micro LED layer 130 .

[0078] In this way, the light absorption effect of the light absorption layer 140 and the position of the light absorption layer 140 absorb the stray light between the Micro LED layer 130 and the array substrate 110, thereby improving the contrast of the Micro LED display panel.

[0079] In some embodiments, as Figure 2As shown, the Micro LED layer 130 includes, along the epitaxial growth direction, the following: a sapphire substrate 120, an n-GaN layer 131 with a thickness of 3μm; an InGaN / GaN multi-quantum well 132 with a thickness of 50nm; a p-GaN layer 133 with a thickness of 500nm; an ITO current spreading layer 134 with a thickness of 70nm is deposited by magnetron sputtering; each light-emitting pixel unit is subsequently separated by ICP etching; the n-type electrode is evaporated to be Ti / Al with a thickness of 500nm; the p-type electrode is Ni / Al with a thickness of 200nm; a SiO2 dielectric layer 137 is deposited for isolating the device, and the n-type electrode and p-type electrode are exposed by dry etching to form a complete Micro LED layer 130.

[0080] like Figure 4 As shown, metal indium balls (fourth pads 161) are first deposited on the n-electrode and p-type electrodes on the Micro LED layer 130. The indium balls are smaller than the electrodes. Then, metal indium balls (third pads 162) are deposited on the driving pixel electrodes and common electrode 111 on the driver circuit. The array substrate 110 and the Micro LED layer 130 are electrically connected using a flip chip process.

[0081] like Figure 4 As shown, the p-type electrode in the Micro LED layer 130 is electrically connected to the driving pixel electrode on the array substrate 110, and the n-type electrode in the Micro LED layer 130 is electrically connected to the common electrode 111 on the array substrate 110. Figure 3 and 4 As shown, the driving pixel electrodes and the common electrodes 111 in the array substrate 110 are both made of Al metal with a thickness of 200-300 nm, wherein the common electrode 111 is located at the periphery of the display area 112 .

[0082] like Figure 1 and Figure 4 As shown, after the flip chip process, a frame glue needs to be applied around the display area 112 to protect the Micro LED display panel. A gap needs to be reserved for the applied frame glue. After curing, the light absorbing layer 140 is injected into the frame glue. If the light absorbing layer 140 is made of an organic material, such as aniline black, the aniline black material is filled between the Micro LED layer 130 and the array substrate 110 through the gap by vacuum infusion in this embodiment. Finally, a sealing glue is used for sealing protection. The frame glue 150 and the sealing glue used in this embodiment are both UV glue, which is cured by ultraviolet light.

[0083] In some embodiments, the difference from the previous embodiment is that: if an inorganic material, such as titanium oxynitride-silicon dioxide, is used, a titanium oxynitride-silicon dioxide film layer is pre-deposited on the surface of the array substrate 110 on the side close to the Micro LED layer 130. The titanium oxynitride-silicon dioxide film layer can be patterned by photolithography and etching to form multiple pad windows thereon, and the common electrode 111 and the driving pixel electrode in the driving circuit are independently exposed through the multiple pad windows. Then, metal indium balls (third pads 162) are deposited in the pad windows on the array substrate 110 and metal indium balls (fourth pads 161) are deposited on the Micro LED layer 130, and bonding is achieved through a flip chip process. After bonding, a sealant 150 is applied to the non-display area 112 for fixed sealing and protection.

[0084] It should be understood that the fourth pad 161 located on the first electrode 135 and the third pad 162 located on the driving pixel electrode are bonded to form the first pad 160. Similarly, the fourth pad 161 located on the second electrode 136 and the third pad 162 located on the common electrode 111 are bonded to form the second pad 170.

[0085] In another aspect of the embodiments of the present application, a display device is provided, comprising any one of the above-mentioned Micro LED display panels, which can improve the contrast of the Micro LED display panel so that the display device has a better display effect.

[0086] The above description is merely a preferred embodiment of the present application and is not intended to limit the present application. Various modifications and variations are possible for those skilled in the art. Any modifications, equivalent substitutions, or improvements made within the spirit and principles of the present application shall be included within the scope of protection of the present application.

Claims

1. A Micro LED display panel, characterized in that: include: An array substrate having a driving circuit; a Micro LED layer, the Micro LED layer being disposed opposite the array substrate and bonded to a driving circuit of the array substrate so that the driving circuit controls the Micro LED layer to display an image; A light absorbing layer, the light absorbing layer being located between the array substrate and the Micro LED layer; the light absorbing layer being located in a microcavity formed by connecting the Micro LED layer and the array substrate via a flip-chip process; The Micro LED display panel also includes a frame sealant located between the array substrate and the Micro LED layer. The frame sealant is arranged around the outer periphery of the light absorbing layer. The frame sealant has a notch and a sealing glue that seals the notch. The light absorbing layer is filled into the microcavity through the notch.

2. The Micro LED display panel according to claim 1, wherein: The array substrate includes a display area and a non-display area located outside the display area, and the light absorption layer at least covers the display area.

3. The Micro LED display panel according to claim 1 or 2, wherein: The light absorbing layer is an insulating layer; Alternatively, the light absorbing layer is made of an inorganic material; Alternatively, the light absorbing layer is made of an organic material.

4. The Micro LED display panel according to claim 2, wherein: The driving circuit is distributed in the display area and the non-display area, the driving circuit located in the display area includes a driving pixel electrode, and the driving circuit located in the non-display area includes a common electrode; The Micro LED layer includes a first electrode corresponding to the display area and a second electrode corresponding to the non-display area, the first electrode is electrically connected to the driving pixel electrode through a first pad, and the second electrode is electrically connected to the common electrode through a second pad.

5. The Micro LED display panel according to claim 4, wherein: The Micro LED layer further includes a substrate arranged opposite to the array substrate and an epitaxial layer arranged on a side of the substrate close to the array substrate, and the first electrode and the second electrode are arranged at intervals on a side of the epitaxial layer close to the array substrate.

6. A method for preparing a Micro LED display panel, characterized in that: The method comprises: Providing an array substrate and a Micro LED layer facing each other, wherein the array substrate has a driving circuit; Aligning and connecting the Micro LED layer to the array substrate through a flip-chip process, so that the Micro LED layer is bonded to the driving circuit of the array substrate; A light absorbing layer is filled between the array substrate and the Micro LED layer, wherein the light absorbing layer is located in a microcavity formed by connecting the Micro LED layer and the array substrate through a flip-chip process; The light absorbing layer is made of an organic material, and the method of aligning and connecting the Micro LED layer and the array substrate by a flip-chip process includes: Depositing a third pad connected to the electrode of the driving circuit on one side of the array substrate; Depositing a fourth pad on one side of the Micro LED layer; Aligning and bonding the fourth pad on the Micro LED layer to the third pad on the array substrate; Filling a light absorbing layer between the array substrate and the Micro LED layer includes: Applying a sealant around the periphery of the display area between the Micro LED layer and the array substrate, wherein the sealant has a notch; Filling the light absorbing layer into the space enclosed by the frame sealing glue through the gap by a vacuum perfusion process; The gap is sealed with sealing glue.

7. A display device, characterized in that: Comprising the Micro LED display panel according to any one of claims 1 to 5.

Images