Micro LED display panel, manufacturing method thereof, and display device

Abstract

The embodiments of the present invention disclose a micro-LED display panel, a method for manufacturing the same, and a display device. In one specific embodiment, the micro-LED display panel includes: a light-emitting device layer disposed on a substrate, including a plurality of micro-LED display units arranged in an array; a color conversion layer disposed on the light-emitting side of the light-emitting device layer, including a plurality of color conversion components corresponding one-to-one to the micro-LED display units; and an adhesive layer disposed between the light-emitting device layer and the color conversion layer; wherein the orthographic projection of the color conversion component on the substrate overlaps the orthographic projection of the adhesive layer on the substrate. This embodiment, by arranging the orthographic projection of the color conversion component on the substrate to overlap the orthographic projection of the adhesive layer on the substrate, is not affected by the adhesive material when cutting after the light-emitting device layer and the color conversion layer are bonded together, thereby reducing the cutting gap between the color conversion components corresponding to adjacent light-emitting units, improving the chip utilization rate of the light-emitting device, and has broad application prospects.

Description

Technical Field

[0001] The present invention relates to the field of display technology, and more specifically, to a micro-LED display panel, a manufacturing method thereof, and a display device. Background Art

[0002] With the rapid development of display technology and the eager pursuit of thin, high-resolution, wide-viewing-angle, and fast-response display panels, micro-light-emitting diode (LED) display panels have emerged on the market. The most important structures that distinguish micro-LED display panels from other display panels are the light-emitting device layer and the color conversion layer. Micro-LED display panels achieve multi-color illumination by combining light-emitting devices that emit light of a single wavelength with the color conversion layer.

[0003] Currently, there are two main methods for integrating a color conversion layer with a light-emitting device. The first is to fabricate the color conversion layer directly on the light-emitting device layer, while the second is to fabricate the light-emitting device layer and the color conversion layer separately and then bond them together with an adhesive. The latter method offers a higher yield and is more suitable for applications. However, both methods require cutting the light-emitting device and color conversion layer combination into discrete components, which are then bonded to the display panel's driver transistors. The second method currently involves filling adhesive between adjacent components, resulting in a large cutting width, which results in low chip utilization and high product costs. Summary of the Invention

[0004] In order to achieve the above object, the present invention adopts the following technical solutions:

[0005] A first aspect of the present invention provides a micro LED display panel, comprising:

[0006] A light-emitting device layer provided on the substrate includes a plurality of micro-LED display units arranged in an array;

[0007] A color conversion layer provided on the light-emitting side of the light-emitting device layer includes a plurality of color conversion components corresponding one-to-one to the micro-LED display units; and

[0008] an adhesive layer disposed between the light-emitting device layer and the color conversion layer;

[0009] The orthographic projection of the color conversion component on the substrate covers the orthographic projection of the adhesive layer on the substrate.

[0010] In some optional embodiments, each color conversion component includes a plurality of quantum dot color resistors and a barrier wall defining the quantum dot color resistors.

[0011] The height of the retaining wall is greater than or equal to 20 μm and less than or equal to 50 μm.

[0012] In some optional embodiments, the height of the retaining wall is greater than 30 μm and less than or equal to 50 μm.

[0013] In some optional embodiments, each color conversion component includes: a first quantum dot color resistor, a second quantum dot color resistor, a third quantum dot color resistor, and a retaining wall defining the quantum dot color resistor, wherein an opening is provided in the retaining wall.

[0014] The orthographic projection of the color conversion component on the substrate is a rectangle, and each color conversion component includes a first quantum dot color resistor and a third quantum dot color resistor arranged along the first diagonal of the rectangle, and a second quantum dot color resistor and an opening arranged along the second diagonal of the rectangle, and the second quantum dot color resistor and the opening are located on both sides of the first diagonal.

[0015] In some optional embodiments, the depth of the opening is greater than or equal to 2 μm and less than or equal to 30 μm, and the aperture of the opening is greater than or equal to 15 μm and less than or equal to 30 μm.

[0016] In some optional embodiments, each color conversion component includes: a first quantum dot color resistor, a second quantum dot color resistor, a third quantum dot color resistor, and a barrier wall defining the quantum dot color resistor.

[0017] The orthographic projection of the color conversion component on the substrate is a rectangle. Each color conversion component includes a first quantum dot color resistor and a third quantum dot color resistor arranged along the first diagonal of the rectangle, and a second quantum dot color resistor arranged on the second diagonal. The position on the second diagonal opposite to the second quantum dot color resistor is a solid retaining wall.

[0018] At least part of the color conversion components in the micro LED display panel include support columns, and the orthographic projection of the support columns on the substrate falls into the orthographic projection of the solid retaining wall on the substrate and does not overlap with the orthographic projection of the adhesive layer on the substrate.

[0019] In some optional embodiments, the height of the support pillar is greater than or equal to 1 μm and less than or equal to 10 μm.

[0020] A second aspect of the present invention provides a display device comprising the micro LED display panel described above.

[0021] A third aspect of the present invention provides a method for manufacturing the micro-LED display panel described above, comprising:

[0022] forming a light-emitting device layer, the light-emitting device layer including a plurality of micro LED display units arranged in an array;

[0023] forming a color conversion layer, the color conversion layer including a plurality of color conversion components corresponding one-to-one to the micro-LED display units;

[0024] An adhesive layer is formed on the light-emitting side of the color conversion layer or the light-emitting device layer, and the light-emitting device layer and the color conversion layer are bonded together using the adhesive layer to form a micro LED display panel.

[0025] In some optional embodiments, forming the color conversion layer further comprises:

[0026] forming a retaining wall on the glass cover plate, wherein the height of the retaining wall is greater than or equal to 20 μm and less than or equal to 50 μm;

[0027] A quantum dot color barrier is formed in the area defined by the barrier wall.

[0028] or

[0029] forming a retaining wall on the glass cover;

[0030] forming a quantum dot color barrier in the area defined by the barrier wall;

[0031] forming openings in retaining walls;

[0032] The orthographic projection of the color conversion component on the substrate is a rectangle. Each color conversion component includes a first quantum dot color resistor and a third quantum dot color resistor arranged along a first diagonal line of the rectangle, and a second quantum dot color resistor and an opening arranged along a second diagonal line of the rectangle. The second quantum dot color resistor and the opening are located on both sides of the first diagonal line.

[0033] or

[0034] forming a retaining wall on the glass cover;

[0035] forming a quantum dot color barrier in the area defined by the barrier wall;

[0036] forming support columns on retaining walls;

[0037] The orthographic projection of the color conversion component on the substrate is a rectangle. Each color conversion component includes a first quantum dot color resistor and a third quantum dot color resistor arranged along a first diagonal of the rectangle, and a second quantum dot color resistor arranged on a second diagonal. The position on the second diagonal opposite to the second quantum dot color resistor is a solid retaining wall.

[0038] The orthographic projection of the support column on the base plate falls into the orthographic projection of the solid retaining wall on the base plate and does not overlap with the orthographic projection of the adhesive layer on the base plate.

[0039] The beneficial effects of the present invention are as follows:

[0040] In response to the current existing problems, the present invention develops a micro-LED display panel, a manufacturing method thereof, and a display device, and provides a light-emitting device layer and a color conversion layer bonded by an adhesive layer. The color conversion layer includes multiple color conversion components corresponding one-to-one to the light-emitting units included in the light-emitting device layer. By making the orthographic projection of the color conversion component on the substrate cover the orthographic projection of the adhesive layer on the substrate, when the color conversion component bonded with the light-emitting unit is cut into discrete components, there is no adhesive at the cutting position between adjacent color conversion components, thereby reducing the cutting width, so that the distance between adjacent units can be reduced when manufacturing the light-emitting unit, thereby improving the chip utilization rate of the light-emitting unit and reducing product costs. It has broad application prospects. BRIEF DESCRIPTION OF THE DRAWINGS

[0041] The specific embodiments of the present invention will be further described in detail below with reference to the accompanying drawings.

[0042] Figure 1 A schematic cross-sectional view showing the bonding of a color conversion component and a light-emitting unit during the prior art micro-LED display panel manufacturing process;

[0043] Figure 2 A schematic cross-sectional view of a micro LED display panel according to an embodiment of the present invention is shown;

[0044] Figure 3 A schematic top view showing the bonding of a color conversion component and a light-emitting unit during the fabrication of a micro-LED display panel according to an embodiment of the present invention is shown;

[0045] Figure 4 Shown along Figure 3 A schematic cross-sectional view of the color conversion component and the light-emitting unit after bonding, taken along line AA′;

[0046] Figure 5 A schematic top view showing the bonding of a color conversion component and a light-emitting unit during the fabrication of a micro-LED display panel according to an embodiment of the present invention is shown;

[0047] Figure 6 Shown along Figure 3 A schematic cross-sectional view of the color conversion component and the light-emitting unit after bonding, taken along line BB′;

[0048] Figure 7 A schematic top view showing the bonding of a color conversion component and a light-emitting unit during the fabrication of a micro-LED display panel according to an embodiment of the present invention is shown;

[0049] Figure 8 Shown along Figure 3 A schematic cross-sectional view of the color conversion component and the light-emitting unit after bonding, taken along line CC′;

[0050] Figures 9 to 12 A schematic process flow chart showing a method for manufacturing a micro LED display panel according to an embodiment of the present invention is shown. DETAILED DESCRIPTION

[0051] In order to more clearly illustrate the present invention, the present invention is further described below in conjunction with the embodiments and drawings. Similar components in the drawings are represented by the same or similar reference numerals. It should be understood by those skilled in the art that the content described below is illustrative rather than restrictive and should not be used to limit the scope of protection of the present invention.

[0052] It should be noted that the terms "having," "including," and "comprising" described in the present invention are open-ended. That is, when describing a module as "having," "including," or "comprising" a first element, a second element, and / or a third element, it means that the module includes other elements in addition to the first element, the second element, and / or the third element. Furthermore, ordinal numbers such as "first," "second," and "third" in the present invention are not intended to limit a specific order but are merely used to distinguish between components.

[0053] The terms “on…”, “formed on…” and “disposed on…” used in the present invention may mean that one layer is directly formed or disposed on another layer, or may mean that one layer is indirectly formed or disposed on another layer, i.e., there are other layers between the two layers.

[0054] In addition, in the present invention, the term "co-layer arrangement" refers to two layers, components, members, elements, or parts that can be formed by the same manufacturing process (e.g., patterning process, etc.), and the two layers, components, members, elements, or parts are generally formed from the same material. For example, co-layer arrangement of two or more functional layers means that these co-layered functional layers can be formed using the same material layer and the same manufacturing process, thereby simplifying the manufacturing process of the display substrate.

[0055] In the prior art, when manufacturing micro-LED display panels, the light-emitting device layer and color conversion layer are separately fabricated and then bonded together using an adhesive. Compared to fabricating the color conversion layer directly on the light-emitting device layer, this method eliminates the risk of high-temperature corrosion and chemical corrosion of the light-emitting units in the light-emitting device layer, resulting in a higher product yield. However, because micro-LED display panels require the fabricated light-emitting device layer and color conversion layer to be cut into discrete components, each component includes a light-emitting unit and a color conversion component. In subsequent processes, these discrete components are bonded as pixels to the micro-LED display panel's driver circuit substrate.

[0056] The inventors have found that when bonding the color conversion layer to the light emitting device layer, it is necessary to apply an adhesive to one of the two to form a bonding layer, and to match the color conversion components in the color conversion layer to the light emitting units in the light emitting device layer. When bonding, apply appropriate pressing force and then cure. Figure 1 As shown, the adhesive flowing under pressure will flow into the gap between the color conversion components, which is the reserved cutting gap. Typically, the light-emitting units are discrete light-emitting units fabricated on a support plate, and the color conversion components are fabricated on a glass cover plate. After the light-emitting device layer and the color conversion layer are bonded, the support plate is removed, and cutting is performed starting from above the glass cover plate in the cutting gap. During the disconnection process, both laser cutting and blade wheel cutting have a cutting width. The laser spot is smaller than that of blade wheel cutting. When cutting only glass, the cutting width of laser cutting can be reduced to 5μm. However, when cutting organic adhesives, the cutting width requires tens of microns. Because the light-emitting units correspond one-to-one with the color conversion components, a larger cutting width limits the number of light-emitting units with larger gaps. In other words, a larger cutting width results in lower utilization of the entire chip substrate when manufacturing the light-emitting units, thereby increasing the production cost of the light-emitting units and, consequently, the cost of the micro-LED display panel.

[0057] In order to solve the above technical problems, refer to Figure 2 As shown, the embodiment of the present application provides a micro LED display panel, including:

[0058] The light emitting device layer provided on the substrate 10 includes a plurality of micro LED display units 20 arranged in an array;

[0059] A color conversion layer provided on the light-emitting side of the light-emitting device layer includes a plurality of color conversion components 30 corresponding one to one with the micro-LED display units; and

[0060] An adhesive layer 40 disposed between the light emitting device layer and the color conversion layer;

[0061] The orthographic projection of the color conversion component 30 on the substrate 10 covers the orthographic projection of the adhesive layer 40 on the substrate 10 .

[0062] In this embodiment, a light-emitting device layer and a color conversion layer bonded together by an adhesive layer are provided. The color conversion layer includes a plurality of color conversion components corresponding one-to-one to the light-emitting units included in the light-emitting device layer. Furthermore, the orthographic projections of the color conversion components on the substrate overlap the orthographic projections of the adhesive layer on the substrate. As a result, when the color conversion component bonded with the light-emitting units is cut into discrete components, no adhesive is present at the cutting positions between adjacent color conversion components, thereby reducing the cutting width. This allows the spacing between adjacent units to be reduced when manufacturing the light-emitting units, thereby improving the chip utilization rate in manufacturing the light-emitting units and reducing product costs. The embodiment has broad application prospects.

[0063] The structure of the micro LED display panel according to the embodiment of the present application will be described in detail below with reference to specific examples.

[0064] It should be noted that structural improvements to the micro-LED display panel will directly affect changes in the adhesive layer, and changes in the adhesive layer will directly affect the cutting gap reserved when manufacturing the micro-LED display panel. To demonstrate the structural advantages of the embodiments of the present application, the following embodiments will be described using an intermediate structure in the formation of a micro-LED display panel, that is, the intermediate structure obtained by bonding the light-emitting device layer formed on the glass cover plate and the color conversion layer formed on the support plate together via the adhesive layer and removing the support plate.

[0065] However, those skilled in the art should understand that the actual micro LED display panel should be Figure 2 As shown, the solder pads of the light-emitting units in the cut discrete components are bonded to the corresponding solder pads in the driver circuit layer on the substrate 10. In other words, the micro-LED display panel includes a light-emitting device layer formed on the substrate and a color conversion layer formed on the light-emitting side of the light-emitting device layer. The light-emitting device layer includes multiple light-emitting units 20, and the color conversion layer includes multiple color conversion components 30. The two are bonded together by an adhesive layer 40. The following description will focus on the intermediate structures used to form the micro-LED display panel and will not elaborate on the overall structure.

[0066] In a specific example, referring to Figure 3 and Figure 4 As shown, each color conversion component 30 bonded to a corresponding light-emitting unit 20 includes multiple quantum dot color resists 31 for converting the single color of light emitted by the light-emitting unit 20, and retaining walls 32 that confine the quantum dot color resists 31. In currently common products, a color conversion component 30 includes a first quantum dot color resist 31-1, a second quantum dot color resist 31-2, and a third quantum dot color resist 31-3. These three quantum dot color resists convert the light emitted by the light-emitting unit 20 into red, green, and blue light, respectively. If the light generated by the light-emitting unit 20 is blue, for example, if the luminescent material in the light-emitting unit is made of GaN, the quantum dot color resists that will emit blue light will not perform color conversion on the blue light. However, those skilled in the art should understand that the present application is not intended to limit the number of quantum dot color resists. If more light-emitting points are required for some products, the number of quantum dot color resists can be greater; and the colors are not limited to red, green and blue, and the light-emitting material in the light-emitting unit is not limited to GaN material; in addition, the light-emitting unit can also emit purple light or other colors of light if conditions permit, which will not be elaborated here.

[0067] In this example, continue to refer to Figure 4As shown, each light-emitting unit 20 includes a buffer layer 21, an N-type gallium nitride (GaN) layer 22, an N-type electrode 23, a P-type gallium nitride (GaN) layer 24, and a P-type electrode 25. A quantum well is also provided between the P-type gallium nitride (GaN) layer 24 and the N-type gallium nitride (GaN) layer 22. The buffer layer 21 can be an aluminum oxide substrate or a substrate made of other materials such as gallium nitride. When appropriate voltages are applied to the N-type electrode 23 and the P-type electrode 25, the light-emitting unit 20 near the light-emitting side of the color conversion layer 30 emits light.

[0068] Continue to refer to Figure 4 As shown, each color conversion component 30 includes a quantum dot color resist 31 and a retaining wall 32 for defining the quantum dot color resist 31. The color conversion component 30 also includes a color filter layer 33, which comprises a black matrix corresponding to the retaining wall and a color filter corresponding to the quantum dot color resist. The color of the color filter corresponds to the color of the output light after the quantum dot color resist is converted, thereby filtering out stray light. A glass cover 50 is also provided on the color filter layer 33, which serves as a protective plate for the color conversion component.

[0069] Of course, those skilled in the art should understand that because the color conversion components 30 are spaced apart, in the actual manufacturing process, the glass cover 50 will be used as the substrate to generate each layer from near to far. After the retaining wall 32 and the quantum dot color resist 31 are formed, an encapsulation layer 34 covering the retaining wall 32 and the quantum dot color resist 31 will be formed.

[0070] In particular, in this embodiment, the height of the retaining wall 32 is increased so that the height of the retaining wall 32 is much higher than the height of the quantum dot color resist, so that after the encapsulation layer 34 is formed, there is still a recessed space in the area corresponding to the quantum dot color resist 31.

[0071] Preferably, the height of the retaining wall 32 is greater than or equal to 20 μm and less than or equal to 50 μm. More preferably, the height of the retaining wall 32 is greater than or equal to 30 μm and less than or equal to 50 μm. It should be understood that the more preferred example can ensure that there is sufficient recessed space in the area corresponding to the quantum dot color resist 31 after the encapsulation layer 34 is formed.

[0072] With this arrangement, when the light-emitting units 20 in the light-emitting unit layer are bonded to the color conversion components 30 in the color conversion layer in a one-to-one correspondence, the adhesive applied to the surface of the light-emitting units 20 or color conversion components 30, under the action of pressure, tends to flow into the recessed space formed by the raised retaining wall 32. This prevents the formation of the adhesive layer 40 in the reserved cutting gap between adjacent color conversion components 30. This ensures that the orthographic projection of the color conversion components on the substrate 10 in the micro-LED display panel covers the orthographic projection of the adhesive layer 40 on the substrate 10. Furthermore, with this arrangement, when cutting from the side of the glass cover 50 away from the color conversion components 30, there is no adhesive interference, and the cutting gap W can be reduced to 5 μm. This significantly improves the utilization rate of the chip substrate used to manufacture the light-emitting units, reduces costs, and has broad application prospects.

[0073] In another example, referring to Figure 5 and Figure 6 As shown, each color conversion component 20 includes a first quantum dot color resist 31 - 1 , a second quantum dot color resist 31 - 2 , a third quantum dot color resist 31 - 3 , and a barrier 32 that defines the quantum dot color resist.

[0074] The three quantum dot color resists convert the light emitted by light-emitting unit 20 into red, green, and blue light, respectively. If the light generated by light-emitting unit 20 is blue, for example, the light-emitting material in the light-emitting unit is made of GaN material, the quantum dot color resist that will emit blue light will not perform color conversion on the blue light.

[0075] However, those skilled in the art should also understand that the present application is not intended to limit the luminescent colors of each quantum dot color resistor to red, green and blue, and the luminescent material in the light-emitting unit is not limited to GaN material; in addition, the light-emitting unit can also emit purple light or other colors of light if conditions permit, which will not be repeated here.

[0076] In addition, it should be noted that the structures of the light emitting unit 20, the color filter layer 33 in the color conversion component, and the glass cover 50 in this example are similar to those in the above examples and are not described in detail here.

[0077] In particular, in this example, an opening KK is provided in the retaining wall 32. Optionally, the depth of the opening is greater than or equal to 2 μm and less than or equal to 30 μm, and the aperture of the opening is greater than or equal to 15 μm and less than or equal to 30 μm.

[0078] Among them, the positive projection of the color conversion component 30 on the substrate 10 of the micro LED display panel is a rectangle, and each color conversion component 30 includes a first quantum dot color resistor 31-1 and a third quantum dot color resistor 31-3 arranged along the first diagonal of the rectangle, and a second quantum dot color resistor 31-2 and an opening KK arranged along the second diagonal of the rectangle. The second quantum dot color resistor 31-2 and the opening KK are located on both sides of the first diagonal.

[0079] With this arrangement, when the light-emitting units 20 in the light-emitting unit layer are bonded to the color conversion components 30 in the color conversion layer in a one-to-one correspondence, the adhesive applied to the surface of the light-emitting units 20 or color conversion components 30, under the action of pressure, tends to flow into the nearest opening KK, thereby preventing the formation of the adhesive layer 40 in the reserved cutting gap between adjacent color conversion components 30. This ensures that the orthographic projection of the color conversion components on the substrate 10 in the micro-LED display panel covers the orthographic projection of the adhesive layer 40 on the substrate 10. Furthermore, with this arrangement, when cutting from the side of the glass cover 50 away from the color conversion components 30, there is no interference from the adhesive, and the cutting gap W can be reduced to 5μm. This significantly improves the utilization rate of the chip substrate used to manufacture the light-emitting units, reduces costs, and has broad application prospects.

[0080] In addition, it is worth mentioning that this example is Figure 3 and Figure 4 Compared with the example, there is no need to increase the thickness of the device, which is more conducive to the thinning of the display panel.

[0081] In another example, referring to Figure 7 and Figure 8 As shown, each color conversion component 20 includes a first quantum dot color resist 31 - 1 , a second quantum dot color resist 31 - 2 , a third quantum dot color resist 31 - 3 , and a barrier 32 that defines the quantum dot color resist.

[0082] The three quantum dot color resists convert the light emitted by light-emitting unit 20 into red, green, and blue light, respectively. If the light generated by light-emitting unit 20 is blue, for example, the light-emitting material in the light-emitting unit is made of GaN material, the quantum dot color resist that will emit blue light will not perform color conversion on the blue light.

[0083] However, those skilled in the art should also understand that the present application is not intended to limit the luminescent colors of each quantum dot color resistor to red, green and blue, and the luminescent material in the light-emitting unit is not limited to GaN material; in addition, the light-emitting unit can also emit purple light or other colors of light if conditions permit, which will not be repeated here.

[0084] In addition, it should be noted that the structures of the light emitting unit 20, the color filter layer 33 in the color conversion component, and the glass cover 50 in this example are similar to those in the above examples and are not described in detail here.

[0085] In particular, in this example, the positive projection of the color conversion component 30 on the substrate 10 of the micro LED display panel is a rectangle, and each color conversion component 30 includes a first quantum dot color resist 31-1 and a third quantum dot color resist 31-3 arranged along the first diagonal of the rectangle, and a second quantum dot color resist 31-2 arranged on the second diagonal, and the position opposite to the second quantum dot color resist on the second diagonal is a solid retaining wall.

[0086] In addition, in this example, at least part of the color conversion component 30 in the micro LED display panel includes a support column 60, and the orthographic projection of the support column 60 on the substrate 10 falls into the orthographic projection of the solid retaining wall on the substrate 10 and does not overlap with the orthographic projection of the adhesive layer 40 on the substrate.

[0087] Optionally, when the height of the support pillar is greater than or equal to 1 μm and less than or equal to 10 μm, a better supporting effect can be provided.

[0088] With this arrangement, when the light-emitting units 20 in the light-emitting unit layer are bonded to the color conversion components 30 in the color conversion layer in a one-to-one correspondence, the space between each light-emitting unit 20 and color conversion component 30 in the light-emitting unit layer and the color conversion layer is supported by the support pillars 60. This prevents the adhesive applied to the surface of the light-emitting unit 20 or color conversion component 30 from overflowing due to pressure, thereby preventing the formation of the adhesive layer 40 in the reserved cutting gap between adjacent color conversion components 30. This ensures that the orthographic projection of the color conversion component on the substrate 10 in the micro-LED display panel covers the orthographic projection of the adhesive layer 40 on the substrate 10. Furthermore, with this arrangement, when cutting from the side of the glass cover 50 away from the color conversion component 30, without the influence of the adhesive, the cutting gap W can be reduced to 5 μm. This significantly improves the utilization rate of the chip substrate used to manufacture the light-emitting units, reduces costs, and has broad application prospects.

[0089] In addition, it is worth mentioning that this example is Figure 3 and Figure 4 Compared with the example, there is no need to increase the thickness of the device, which is more conducive to the thinning of the display panel.

[0090] It should be noted that although Figure 7 and Figure 8The figure shows a situation in which the solid retaining wall in each color conversion component 30 includes a support column 60, but the present application is not limited to this. In fact, it is only necessary for at least some color conversion components to include support columns. As long as support can be formed between some color conversion components and corresponding light-emitting units, the above-mentioned purpose of avoiding the formation of an adhesive layer in the reserved cutting gap between adjacent color conversion components 30 can be achieved.

[0091] Corresponding to the micro LED display panel, an embodiment of the present application further provides a method for manufacturing the micro LED display panel described in the above embodiment, comprising:

[0092] forming a light-emitting device layer, the light-emitting device layer including a plurality of micro LED display units arranged in an array;

[0093] forming a color conversion layer, the color conversion layer including a plurality of color conversion components corresponding one-to-one to the micro-LED display units;

[0094] An adhesive layer is formed on the light-emitting side of the color conversion layer or the light-emitting device layer, and the light-emitting device layer and the color conversion layer are bonded together using the adhesive layer to form a micro LED display panel.

[0095] In order to further explain the specific production method, refer to Figures 9 to 12 The flowchart shown specifically describes the production process involved Figure 3 and Figure 4 The production process of the example.

[0096] It should be noted that in the method part, because the various structures in the color conversion layer are formed sequentially with the glass cover as the support, the bottom-to-top direction of the following flow chart is opposite to the above embodiment, indicating the direction away from the glass cover 50.

[0097] In step S101 , a retaining wall 32 is formed on the glass cover 50 . The height of the retaining wall 32 is greater than or equal to 20 μm and less than or equal to 50 μm.

[0098] Specifically, refer to Figure 9 As shown, a color filter layer 33 is formed on the glass cover 50. The color filter layer 33 includes a black matrix and a color filter. In the area where the cutting gaps between the color conversion components are to be formed, neither the black matrix nor the color filter is formed.

[0099] Reference Figure 10 As shown, a retaining wall 32 for limiting the quantum dot color resist 31 is formed on the color filter layer 33, and the height of the retaining wall 32 is greater than or equal to 20 μm and less than or equal to 50 μm. Preferably, the height of the retaining wall 32 is greater than or equal to 30 μm and less than or equal to 50 μm.

[0100] In step S102, refer to Figure 11As shown, a quantum dot color resist 31 is formed in the area defined by the barrier wall 32 .

[0101] Those skilled in the art should understand that when the quantum dot color resists 31 are converted into quantum dot color resists of different colors, quantum dot color resists of different colors are formed in batches in steps, which will not be described in detail here.

[0102] In step S103, refer to Figure 12 As shown, an encapsulation layer is formed to cover the retaining wall 32 and the quantum dot color resist 31 . It should be understood that in order to simplify the process, the encapsulation layer also covers the cutting gaps between the color conversion components 30 .

[0103] At this point, the steps of making the color conversion component on the glass cover are completed. Afterwards, an adhesive is applied on the color conversion layer or on the light-emitting side surface of the micro LED light-emitting unit, and the color conversion component is bonded to the micro LED light-emitting unit one by one to form a Figure 4 The intermediate structure shown.

[0104] After that, laser cutting or knife wheel cutting is used to cut along the reserved cutting gap from the side of the glass cover away from the color conversion layer to cut the adhesive body of the color conversion component and the micro LED light-emitting unit made on a glass cover into discrete components; the discrete components are bound to the corresponding pads on the substrate including the driving circuit layer, and the necessary packaging is performed to form a micro LED display panel.

[0105] With this arrangement, when the light-emitting units 20 in the light-emitting unit layer are bonded to the color conversion components 30 in the color conversion layer in a one-to-one correspondence, the adhesive applied to the surface of the light-emitting units 20 or color conversion components 30, under the action of pressure, tends to flow into the recessed space formed by the raised retaining wall 32. This prevents the formation of the adhesive layer 40 in the reserved cutting gap between adjacent color conversion components 30. This ensures that the orthographic projection of the color conversion components on the substrate 10 in the micro-LED display panel covers the orthographic projection of the adhesive layer 40 on the substrate 10. Furthermore, with this arrangement, when cutting from the side of the glass cover 50 away from the color conversion components 30, the cutting gap W can be reduced to 5 μm because there is no adhesive interference. This significantly improves the utilization rate of the chip substrate used to manufacture the light-emitting units, reduces costs, and has broad application prospects.

[0106] for Figure 5 and Figure 6 In the example shown, the steps for forming the color conversion layer are similar to those in the above example, except that after forming the quantum dot color barrier in the area defined by the retaining wall, an opening is formed in the retaining wall.

[0107] The orthographic projection of the color conversion component on the substrate is a rectangle, and each color conversion component includes a first quantum dot color resistor and a third quantum dot color resistor arranged along the first diagonal of the rectangle, and a second quantum dot color resistor and an opening arranged along the second diagonal of the rectangle, and the second quantum dot color resistor and the opening are located on both sides of the first diagonal.

[0108] With this arrangement, when the light-emitting units in the light-emitting unit layer are bonded to the color conversion components in the color conversion layer in a one-to-one correspondence, the adhesive applied to the surfaces of the light-emitting units or color conversion components tends to flow into the nearest openings under the pressure, thereby preventing the formation of an adhesive layer in the reserved cutting gaps between adjacent color conversion components 30. Furthermore, with this arrangement, the cutting gap W can be reduced to 5 μm, which in turn greatly improves the utilization rate of the chip substrate used to manufacture the light-emitting units, reduces costs, and has broad application prospects.

[0109] for Figure 7 and Figure 8 In the example of , the steps of forming the color conversion layer are similar to the above example, except that after the quantum dot color barrier is formed in the area defined by the retaining wall, the support column is formed on the retaining wall;

[0110] The orthographic projection of the color conversion component on the substrate is a rectangle, and each color conversion component includes a first quantum dot color resistor and a third quantum dot color resistor arranged along a first diagonal of the rectangle, and a second quantum dot color resistor arranged on a second diagonal, and a position on the second diagonal opposite to the second quantum dot color resistor is a solid retaining wall;

[0111] The orthographic projection of the support column on the base plate falls into the orthographic projection of the solid retaining wall on the base plate and does not overlap with the orthographic projection of the adhesive layer on the base plate.

[0112] With this arrangement, when the light-emitting units in the light-emitting unit layer are bonded to the color conversion components in the color conversion layer in a one-to-one correspondence, the support provided by the support pillars prevents excessive pressure on the adhesive applied to the surfaces of the light-emitting units or color conversion components, preventing overflow. This prevents the formation of an adhesive layer in the reserved cut gaps between adjacent color conversion components 30. Furthermore, with this arrangement, the cut gap W can be reduced to 5 μm, significantly improving the utilization of the chip substrate used to manufacture the light-emitting units, reducing costs, and offering broad application prospects.

[0113] Based on the same inventive concept, an embodiment of the present invention further provides a display device, including the micro LED display panel described above.

[0114] Since the micro LED display panel included in the display device provided in the embodiment of the present application corresponds to the micro LED display panels provided in the above-mentioned embodiments, the previous implementation manner is also applicable to this embodiment and will not be described in detail in this embodiment.

[0115] In this embodiment, the display device can be any product or component with a display function, such as a mobile phone, tablet computer, television, monitor, laptop computer, car display, digital photo frame or navigation system. By loading the above micro LED display panel, the display device can have lower cost, higher competitiveness and broad application prospects.

[0116] In response to the current existing problems, the present invention develops a micro-LED display panel, a manufacturing method thereof, and a display device, and provides a light-emitting device layer and a color conversion layer bonded by an adhesive layer. The color conversion layer includes multiple color conversion components corresponding one-to-one to the light-emitting units included in the light-emitting device layer. By making the orthographic projection of the color conversion component on the substrate cover the orthographic projection of the adhesive layer on the substrate, when the color conversion component bonded with the light-emitting unit is cut into discrete components, there is no adhesive at the cutting position between adjacent color conversion components, thereby reducing the cutting width, so that the distance between adjacent units can be reduced when manufacturing the light-emitting unit, thereby improving the chip utilization rate of the light-emitting unit and reducing product costs. It has broad application prospects.

[0117] Obviously, the above embodiments of the present invention are merely examples for clearly illustrating the present invention, and are not limitations on the implementation methods of the present invention. For ordinary technicians in this field, other different forms of changes or modifications can be made based on the above description. It is impossible to list all the implementation methods here. All obvious changes or modifications derived from the technical solution of the present invention are still within the scope of protection of the present invention.

Claims

1. A micro LED display panel, characterized in that: include: A light-emitting device layer provided on the substrate includes a plurality of micro-LED display units arranged in an array; A color conversion layer provided on the light-emitting side of the light-emitting device layer includes a plurality of color conversion components corresponding one-to-one to the micro-LED display units; as well as an adhesive layer disposed between the light-emitting device layer and the color conversion layer; Wherein, the orthographic projection of the color conversion component on the substrate covers the orthographic projection of the adhesive layer on the substrate.

2. The micro LED display panel according to claim 1, wherein: Each color conversion component includes a plurality of quantum dot color blocks and a barrier wall defining the quantum dot color blocks. Wherein, the height of the retaining wall is greater than or equal to 20µm and less than or equal to 50µm.

3. The micro LED display panel according to claim 2, wherein: The height of the retaining wall is greater than 30 μm and less than or equal to 50 μm.

4. The micro LED display panel according to claim 1, wherein: Each color conversion component includes: a first quantum dot color resistor, a second quantum dot color resistor, a third quantum dot color resistor, and a retaining wall defining the quantum dot color resistor, wherein an opening is provided in the retaining wall. The orthographic projection of the color conversion component on the substrate is a rectangle, and each color conversion component includes the first quantum dot color resist and the third quantum dot color resist arranged along the first diagonal of the rectangle, and the second quantum dot color resist and the opening arranged along the second diagonal of the rectangle, and the second quantum dot color resist and the opening are located on both sides of the first diagonal.

5. The micro LED display panel according to claim 4, wherein: The depth of the opening is greater than or equal to 2 μm and less than or equal to 30 μm, and the aperture of the opening is greater than or equal to 15 μm and less than or equal to 30 μm.

6. The micro LED display panel according to claim 1, wherein: Each color conversion component includes: a first quantum dot color resistor, a second quantum dot color resistor, a third quantum dot color resistor, and a barrier wall defining the quantum dot color resistor. The orthographic projection of the color conversion component on the substrate is a rectangle. Each color conversion component includes a first quantum dot color resistor and a third quantum dot color resistor arranged along a first diagonal line of the rectangle, and the second quantum dot color resistor arranged on a second diagonal line. The position on the second diagonal line opposite to the second quantum dot color resistor is a solid retaining wall. At least part of the color conversion components in the micro LED display panel include support columns, and the orthographic projection of the support columns on the substrate falls within the orthographic projection of the solid retaining wall on the substrate and does not overlap with the orthographic projection of the adhesive layer on the substrate.

7. The micro LED display panel according to claim 6, wherein: The height of the support column is greater than or equal to 1µm and less than or equal to 10µm.

8. A display device, characterized in that: Comprising the micro LED display panel according to any one of claims 1-7.

9. A method for manufacturing the micro-LED display panel according to any one of claims 1 to 7, characterized in that: include: forming a light-emitting device layer, wherein the light-emitting device layer includes a plurality of micro LED display units arranged in an array; forming a color conversion layer, the color conversion layer including a plurality of color conversion components corresponding one-to-one to the micro-LED display units; An adhesive layer is formed on the light-emitting side of the color conversion layer or the light-emitting device layer, and the light-emitting device layer and the color conversion layer are bonded together using the adhesive layer to form the micro LED display panel.

10. The manufacturing method according to claim 9, characterized in that: The color conversion layer further comprises: forming a retaining wall on the glass cover plate, wherein the height of the retaining wall is greater than or equal to 20 μm and less than or equal to 50 μm; A quantum dot color barrier is formed in the area defined by the retaining wall. or forming a retaining wall on the glass cover; forming a quantum dot color resist in the area defined by the retaining wall; forming an opening in the retaining wall; The orthographic projection of the color conversion component on the substrate is a rectangle, and each color conversion component includes a first quantum dot color resistor and a third quantum dot color resistor arranged along a first diagonal line of the rectangle, and a second quantum dot color resistor and the opening arranged along a second diagonal line of the rectangle, wherein the second quantum dot color resistor and the opening are located on both sides of the first diagonal line. or forming a retaining wall on the glass cover; forming a quantum dot color resist in the area defined by the retaining wall; forming support columns on the retaining wall; The orthographic projection of the color conversion component on the substrate is a rectangle, and each color conversion component includes a first quantum dot color resistor and a third quantum dot color resistor arranged along a first diagonal line of the rectangle, and the second quantum dot color resistor arranged on a second diagonal line, and a position on the second diagonal line opposite to the second quantum dot color resistor is a solid retaining wall; The orthographic projection of the support column on the substrate falls within the orthographic projection of the solid retaining wall on the substrate and does not overlap with the orthographic projection of the adhesive layer on the substrate.

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