Power amplifier and RF circuit module

Abstract

This invention provides a power amplifier device and an RF circuit module that suppresses harmonics contained in the amplified signal from the amplifier from entering other devices. The power amplifier device includes: a first component having a first circuit; a second component having a second circuit; and an intercomponent connecting conductor electrically connecting the first circuit and the second circuit. The second component is mounted on the first component. The second circuit includes a first amplifier that amplifies a radio frequency signal and outputs a first amplified signal. The first circuit includes a control circuit that controls the operation of the second circuit. At least a portion of a first terminal circuit is formed in the first component. The first terminal circuit is connected to the first amplifier via the intercomponent connecting conductor, thereby attenuating the harmonic components of the first amplified signal.

Description

Technical Field

[0001] This disclosure relates to power amplifier devices and RF circuit modules. Background Technology

[0002] Traditionally, electronic devices such as mobile communications or satellite communications have embedded RF (Radio Frequency) front-ends that integrate the transmission and reception of high-frequency signals. The RF front-end consists of a high-frequency amplifier, a control IC (Integrated Circuit) that controls the high-frequency amplifier, a switching IC, and a duplexer, all mounted on a packaging substrate and molded in resin.

[0003] High-frequency amplifiers are, for example, monolithic microwave ICs (MMICs) formed on gallium arsenide (GaAs) substrates. Control ICs and switching ICs are, for example, MMICs formed on silicon (Si) substrates. These are independently mounted on the surface of the package substrate.

[0004] On the other hand, Patent Document 1 discloses a structure in which control ICs and the like are stacked on a high-frequency amplifier and their leads are connected to electrodes on the package substrate in order to reduce the size of the package substrate.

[0005] Patent Document 1: U.S. Patent Application Publication No. 2015 / 0303971

[0006] Patent Document 1 discloses a component on a laminated substrate in which an HBT (Heterojunction Bipolar Transistor) chip with a high-frequency amplifier and a Si die with a control IC are stacked. Additionally, an output matching circuit and a band selection switch are stacked on the laminated substrate at a location different from where the HBT die and Si die are located. The amplified signal, after being amplified by the high-frequency amplifier, is transmitted to the band selection switch via the output matching circuit.

[0007] However, in such a configuration, there is a possibility of harmonics radiating from the high-frequency amplifier back to the output matching circuit. These radiated harmonics can enter other devices and become noise, thus requiring techniques to suppress harmonics from entering other devices. Summary of the Invention

[0008] The present invention was made in view of the following, and its object is to provide a power amplifier device and an RF circuit module that suppresses harmonics contained in the amplified signal after being amplified by the amplifier from entering other devices.

[0009] One aspect of the present invention relates to a power amplification device comprising: a first component having a first circuit; a second component having a second circuit; and an intercomponent connecting conductor electrically connecting the first circuit and the second circuit, wherein the second component is mounted on the first component, the second circuit includes a first amplifier that amplifies a radio frequency signal and outputs a first amplified signal, the first circuit includes a control circuit that controls the operation of the second circuit, and at least a portion of a first terminal circuit is formed in the first component, the first terminal circuit being connected to the first amplifier via the intercomponent connecting conductor, thereby attenuating the harmonic components of the first amplified signal.

[0010] Invention Effects

[0011] According to the present invention, a power amplifier device and an RF circuit module are provided that suppress harmonics contained in the amplified signal after being amplified by the amplifier from entering other devices. Attached Figure Description

[0012] Figure 1 (A) is a top view of the RF circuit module 300. Figure 1 (B) is shown schematically. Figure 1 (A) is a cross-sectional view of the RF circuit module 300 along line II-II.

[0013] Figure 2 (A) and (B) are diagrams illustrating the manufacturing process of the RF circuit module 300.

[0014] Figure 3 This is a diagram showing two heat conduction paths in the RF circuit module 300, which serve as heat dissipation paths from the circuit elements formed in the second component 210.

[0015] Figure 4 This is a diagram showing the manufacturing method of PA circuit element 301.

[0016] Figure 5 This is a diagram used to illustrate the manufacturing method of the second component 210 and the joining method of the second component 210 to the first component 110.

[0017] Figure 6 This is the circuit diagram of power amplifier circuit 61.

[0018] Figure 7 This is a diagram used to illustrate the configuration of the power amplifier device 11 in the power amplifier circuit 61.

[0019] Figure 8 This is a diagram showing an example of the layout of the first circuit 400 in the first component 110.

[0020] Figure 9 This is a diagram showing an example of the layout of electrodes disposed on the z-axis side of the first component 110 and the second component 210.

[0021] Figure 10 This is a diagram showing an example of the layout of the second circuit 500 in the second component 210.

[0022] Figure 11 It is a magnified view of the area around amplifier 501 and heat sink 131.

[0023] Figure 12 yes Figure 11 The sectional view shown along the cut line XII-XII.

[0024] Figure 13 yes Figure 11 The sectional view shown is along the cut line XIIV-XIIV.

[0025] Figure 14 It is a magnified view of the area surrounding the terminal circuit 411.

[0026] Figure 15 yes Figure 14 The cross-sectional view shown along the cut line XV-XV.

[0027] Figure 16 yes Figure 14 The sectional view shown is along the cut line XVI-XVI.

[0028] Figure 17 This is the circuit diagram of power amplifier circuit 62.

[0029] Figure 18 This is a diagram showing an example of the layout of the first circuit 400 in the first component 110.

[0030] Figure 19 This is a diagram showing an example of the layout of electrodes disposed on the z-axis side of the first component 110 and the second component 210.

[0031] Figure 20 This is a diagram showing an example of the layout of the second circuit 500 in the second component 210.

[0032] Figure 21 It's enlarged. Figure 19 The diagram around the matching circuit 703 in the diagram.

[0033] Figure 22 yes Figure 21 The sectional view shown is along the cut line XXII-XXII.

[0034] Figure 23 It's enlarged. Figure 19The diagram around the terminal circuit 701 in the diagram.

[0035] Figure 24 yes Figure 23 The sectional view shown is along the cut line XXIV-XXIV.

[0036] Figure 25 yes Figure 23 The sectional view shown is along the cut line XXV-XXV.

[0037] Figure 26 This is a diagram used to illustrate the configuration of the power amplifier device 13 in the power amplifier circuit 63.

[0038] Figure 27 This is a diagram used to illustrate the configuration of the power amplifier device 14 in the power amplifier circuit 64.

[0039] Figure 28 This is a diagram used to illustrate a modified example of the matching circuit 441c in the power amplifier circuit 64.

[0040] Figure 29 This is a diagram used to illustrate the configuration of the power amplifier device 15 in the power amplifier circuit 65.

[0041] Figure 30 This is a diagram used to illustrate the configuration of the power amplifier device 16 in the power amplifier circuit 66.

[0042] Figure 31 This is a diagram used to illustrate a modified example of the matching circuit 441c in the power amplifier circuit 66.

[0043] Figure 32 This is a diagram used to illustrate the configuration of the power amplifier device 17 in the power amplifier circuit 67.

[0044] Figure 33 This is a diagram used to illustrate the configuration of the power amplifier device 18 in the power amplifier circuit 68.

[0045] Figure 34 This is a diagram used to illustrate the configuration of the power amplifier device 19 in the power amplifier circuit 69.

[0046] Figure 35 This is a diagram used to illustrate the configuration of the power amplifier device 20 in the power amplifier circuit 70.

[0047] Figure 36 This is a diagram used to illustrate the configuration of the power amplifier device 21 in the power amplifier circuit 71.

[0048] Figure 37It means Figure 36 Detailed diagrams of the 90-degree phase shift circuit 444 and the output matching circuit 445 are shown.

[0049] Figure 38 This is a diagram used to illustrate the configuration of the power amplifier device 22 in the power amplifier circuit 72.

[0050] Figure 39 This is a diagram illustrating a modified configuration of the power amplifier device 18 in the power amplifier circuit 68.

[0051] Figure 40 This is a diagram used to illustrate a modified example of the configuration in the power amplifier device 21 of the power amplifier circuit 71.

[0052] Explanation of reference numerals in the attached figures

[0053] 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22… Power amplifier; 31… Input terminal; 32… Output terminal; 33… Power supply terminal; 61, 62, 63, 64, 65, 66, 67, 68, 69, 70, 71, 72… Power amplifier circuit; 110… First component; 111… Adhesive layer; 113… Side electrode of the first component; 114… Conductor post; 115… Solder layer; 116… First conductor protrusion; 119… Resist film; 121… Substrate; 122… First insulating film; 123… Second insulating film; 124… Third insulating film; 131… Heat sink; 132a, 132b, 132cb, 132cd, 132d b, 132dd, 132de… First component electrodes; 132ca, 132cc, 132ce, 132da, 132dc, 132e, 132ia, 132ib, 132ic, 132id, 132ie, 132if… First component metal wiring; 133… First component via; 210… Second component; 211… Mother substrate; 212… Release layer; 213… Second component side electrode; 213a… Emitter pad; 214… Conductor post; 215… Solder layer; 216… Second conductor protrusion; 221B… Base layer; 221C… Collector layer; 221E… Emitter layer; 222B… Base electrode; 222C… Collector electrode; 222E… Emitter electrode; 22 3E…Emitter wiring; 224…Interlayer insulating film; 225…First insulating film; 226…Second insulating film; 300…RF circuit module; 301…PA circuit element; 310…Module substrate; 311…Substrate-side electrode; 312…Substrate-side electrode; 313…Molding resin; 351a, 351b, 351c, 351d, 351i, 351j, 351k, 351m, 351n, 351p…Inter-component connection conductors; 351aa, 351da, 351e, 351f, 351g…Rewiring; 351ab, 351db, 351h…Rewiring vias; 400…First circuit; 401…Amplifier control circuit; 402…Switch control circuit; 411, 41 2, 413…Terminal circuit; 431, 432, 433, 434, 435, 436…Switches; 441, 442, 443, 443a…Matching circuit; 444…90-degree phase shift circuit; 445…Output matching circuit; 500…Secondary circuit; 501, 501c…Amplifier; 501a…Transistor; 502…Bias circuit; 503…Bias transistor; 504, 505…Transistor; 506…Resistor; 507…Current source; 601…Matching circuit; 602…Balance converter; 651, 652, 653…Inductors; 651a, 652a, 653a…Intermediate tap; 701…Terminal circuit; 702, 703…Matching circuit; 751…Power supply. Detailed Implementation

[0054] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. Furthermore, the same reference numerals will be used to label the same elements, and repetitive descriptions will be omitted whenever possible.

[0055] [First Implementation Method]

[0056] An overview of the RF circuit unit involved in the first embodiment will be described.

[0057] Figure 1 (A) is a top view of the RF circuit module 300. Figure 1 (B) is shown schematically. Figure 1 (A) is a cross-sectional view of the RF circuit module 300 along line II-II.

[0058] like Figure 1 (A) and Figure 1 As shown in (B), the RF circuit module 300 includes a power amplifier 11 and a molding resin 313. The power amplifier 11 includes a power amplifier (PA) circuit element 301 and a module substrate 310. The PA circuit element 301 includes a first component 110, a second component 210, a first component-side electrode 113, a first conductor protrusion 116 (first component-side conductor protrusion portion), a second component-side electrode 213, a second conductor protrusion 216 (second component-side conductor protrusion portion), and an inter-component connecting conductor (not shown). The first conductor protrusion 116 includes a conductor post 114 and a solder layer 115. The second conductor protrusion 216 includes a conductor post 214 and a solder layer 215.

[0059] The attached diagram shows the x-axis, y-axis, and z-axis. The x-axis, y-axis, and z-axis form a right-handed, three-dimensional orthogonal coordinate system. Hereinafter, the direction of the arrow on the z-axis will be called the z-axis + side, and the direction opposite to the arrow will be called the z-axis - side; the same applies to the other axes. Furthermore, the z-axis + side and z-axis - side will be referred to as the "upper side" and "lower side," respectively.

[0060] The module substrate 310 is, for example, a printed circuit board (PCB) such as a glass substrate or an epoxy resin substrate, and has a cuboid shape. The module substrate 310 includes substrate-side electrodes 311 and 312 for mounting components. The molding resin 313 is, for example, epoxy resin.

[0061] The thermal conductivity of the first component 110 is greater than that of the second component 210. Furthermore, the thickness of the second component 210 is thinner than that of the first component 110. In this embodiment, the first component 110 is, for example, a component of an elemental semiconductor and has a cuboid shape. Specifically, the first component 110 is manufactured through an integrated circuit process (hereinafter referred to as the first integrated circuit process) using semiconductors with group IV elements as the main component material.

[0062] Here, the semiconductor using group IV elements as the main component is, for example, a semiconductor using Si (silicon) as the main component. The first integrated circuit process is, for example, CMOS (Complementary Metal Oxide Semiconductor) or BiCMOS (Bipolar-CMOS). In other words, a circuit (hereinafter referred to as the first circuit) is formed on a semiconductor using Si (silicon) as the main component through the first integrated circuit process. Furthermore, the first component 110 can also be manufactured by the first integrated circuit process using a semiconductor using SiGe (silicon germanium), C (carbon), or SiC (silicon carbide) as the main component material.

[0063] In this embodiment, the second component 210 is, for example, a compound semiconductor component having a cuboid shape. Specifically, the second component 210 is manufactured through an integrated circuit process (hereinafter referred to as the second integrated circuit process) using a semiconductor primarily composed of compounds of group III and group V elements as the material. This semiconductor is, for example, a GaAs (gallium arsenide) semiconductor. The second integrated circuit process is, for example, a GaAs heterojunction bipolar transistor (HBT) or a GaAs pHEMT (pseudo-morphic high electron mobility transistor). In other words, a circuit (hereinafter referred to as the second circuit) is formed on a GaAs-based semiconductor using a GaAs HBT or GaAs pHEMT. The second circuit includes, for example, an amplifier that amplifies RF signals (radio frequency signals).

[0064] In addition, the second component 210 can also be manufactured by a second integrated circuit process (e.g., InP HBT or InP pHEMT) using semiconductors with InP (indium phosphide) as the main component, or by a second integrated circuit process (e.g., GaN HBT or GaN HEMT) using semiconductors with GaN (gallium nitride) as the main component.

[0065] The first circuit in the first component 110 and the second circuit in the second component 210 are electrically connected via an inter-component connection conductor (not shown) without passing through the module substrate 310. In this embodiment, the inter-component connection conductor may be formed on either the first component 110 or the second component 210.

[0066] Figure 2 (A) and Figure 2 (B) is a diagram showing the manufacturing process of the RF circuit module 300. Figure 2 (A) is a cross-sectional view showing the state before the PA circuit element 301 is mounted on the module substrate 310. Figure 2 (B) is a cross-sectional view showing the state in which the PA circuit element 301 is mounted on the module substrate 310.

[0067] The method of forming PA circuit element 301 will be described later. A first conductor protrusion 116 and a second conductor protrusion 216 are formed on the lower surface of PA circuit element 301. By aligning the first conductor protrusion 116 and the second conductor protrusion 216 of PA circuit element 301 to the substrate-side electrode 311 and substrate-side electrode 312 in the module substrate 310, respectively, and then heating and pressurizing them, as shown... Figure 2 As shown in (B), the solder layer 115 of the first conductor protrusion 116 and the solder layer 215 of the second conductor protrusion 216 of the PA circuit element 301 are respectively connected to the substrate side electrode 311 and the substrate side electrode 312.

[0068] Figure 3 This is a diagram showing two heat conduction paths in the RF circuit module 300, serving as heat dissipation paths from the circuit elements formed in the second component 210. Figure 3 In the diagram, the dashed arrows indicate two heat conduction paths. The first heat conduction path is formed by the second component-side electrode 213 and the second conductor protrusion 216. Heat generated by the circuit elements is dissipated and dissipated through this first heat conduction path to the substrate-side electrode 312 and the module substrate 310. The second heat conduction path is from the second component 210 to the first component 110. Heat generated by the circuit elements is dissipated and dissipated through this second heat conduction path.

[0069] Figure 4 This is a diagram showing the manufacturing method of PA circuit element 301. Figure 4 Steps S1 to S7 are cross-sectional views during the intermediate stages of manufacturing PA circuit element 301, and step S8 is a cross-sectional view of the completed PA circuit element 301. Actual manufacturing is carried out on a wafer-by-wafer basis, but... Figure 4 The image shows a single semiconductor device.

[0070] like Figure 4As shown, firstly, a first component 110 is configured. Circuit elements and electrodes have already been formed on the first component 110 through other processes. Additionally, if necessary, a bonding layer can be formed on the surface of the first component 110 using a conventional semiconductor process. This bonding layer is a metal film such as an Au film, a polyimide (PI) film, an organic material film such as polybenzoxazole (PBO) or benzocyclobutene (BCB), or an insulator such as AlN, SiC, or diamond (step S1).

[0071] Next, the second component 210 is joined to the first component 110. In the second component 210, circuit elements and electrodes have been formed through other processes described later (step S2).

[0072] Next, a second component-side electrode 213 is formed on the second component 210 using a standard semiconductor process, and a first component-side electrode 113 is formed on the first component 110. Additionally, an inter-component connection conductor (not shown) is formed to electrically connect the first component 110 and the second component 210. Furthermore, if there are no issues with the manufacturing process, the second component-side electrode 213, the first component-side electrode 113, and the inter-component connection conductor can be formed simultaneously (step S3).

[0073] Next, a resist film 119 is formed so that the first conductor protrusion 116 and the second conductor protrusion 216 should be formed (see reference). Figure 2 (A) and Figure 2 The region (B) has an opening. The first component side electrode 113 or the second component side electrode 213 is exposed from the opening in the resist film 119 (step S4).

[0074] Next, conductor pillars 114 and 214 are deposited on the first component-side electrode 113 and the second component-side electrode 213 exposed within the opening of the resist film 119, respectively, by electroplating. The conductor pillars 114 and 214 are formed, for example, by Cu. The thickness of the conductor pillars 114 and 214 is, for example, 40 μm (step S5).

[0075] Next, solder layers 115 and 215 are deposited on the conductor pillars 114 and 214 deposited within the openings of the resist film 119 by electroplating. Solder layers 115 and 215 are formed, for example, from a SnAg alloy. The thickness of solder layers 115 and 215 is, for example, 30 μm. This forms a first conductor protrusion 116 and a second conductor protrusion 216 (step S6).

[0076] Next, the resist film 119 is removed. Finally, the solder layers 115 and 215 are melted by reflow treatment and then cured (step S7). Thus, the PA circuit element 301 is completed (step S8).

[0077] Similar to the first conductor protrusion 116, the structure in which a conductor pillar 114 is formed from Cu in step S5 and a solder layer 115 is placed on the conductor pillar 114 in step S6 is also called a "Cu pillar bump (CPB)". Furthermore, as the first conductor protrusion 116, a component with a structure where no solder is placed on the upper surface, such as an Au bump, can also be used. Such a protrusion is also called a "pillar". Additionally, as the first conductor protrusion 116, a component with a structure where a conductor pillar is erected on a pad can also be used. Such a conductor protrusion is also called a "post". Furthermore, as the first conductor protrusion 116, a ball bump that forms a spherical shape by reflowing solder can also be used. In addition to these various structures, components with various structures including conductors protruding from the substrate can also be used as conductor protrusions. The second conductor protrusion 216 can also have the same structure as the first conductor protrusion 116.

[0078] Figure 5 This is a diagram used to illustrate the manufacturing method of the second component 210 and the joining method of the second component 210 with respect to the first component 110. Figure 5 The diagram shows a 3D view of each process step. Actual manufacturing is carried out on a wafer-by-wafer basis, but... Figure 5 The image shows a single semiconductor device.

[0079] like Figure 5 As shown, firstly, a release layer 212 is formed on the mother substrate 211, which serves as a compound semiconductor component. A semiconductor thin film is then formed on the z-axis side of this release layer 212 using an epitaxial growth method. Furthermore, multiple circuit elements and electrodes connected to these circuit elements are formed on the semiconductor thin film. This portion becomes the second component 210 (step S11).

[0080] Next, by selectively etching the release layer 212, the second component 210 (semiconductor thin film) is peeled off from the mother substrate 211 (step S12).

[0081] Next, the second component 210 is bonded to the first component 110. In other words, the semiconductor thin film is transferred from the mother substrate 211 to the first component 110, even if it moves and is fixed. In this embodiment, the first component 110 and the second component 210 are bonded by van der Waals bonds or hydrogen bonds (step S13).

[0082] Furthermore, the first component 110 and the second component 210 can also be bonded by electrostatic force, covalent bonds, or eutectic alloy bonds. Alternatively, the first component 110 and the second component 210 can also be eutectic bonded using an Au film. Specifically, in other processes, an Au film is formed on the first component 110 as a bonding layer. The second component 210 is pressed and pressed against the surface of the bonding layer, causing the Au in the bonding layer to diffuse into the GaAs layer of the second component, resulting in a eutectic Au-GaAs bond. Thus, the first component 110 and the second component 210 are bonded.

[0083] The formation of the circuit elements and electrodes of the second component 210 can be performed not only through the stage shown in step S11, but also through a process (photolithography and etching process) for the second component 210 after the second component 210 is bonded to the first component 110, as shown in step S14.

[0084] Hereinafter, the wiring formed after the second component 210 and the first component 110 are joined will be referred to as rewiring. Furthermore, in rewiring, there is wiring that electrically connects the first circuit in the first component 110 and the second circuit in the second component 210 without passing through the module substrate 310. This type of rewiring is one way to connect conductors between components.

[0085] The methods for peeling and transferring the aforementioned semiconductor thin film can be applied, for example, by the following methods. That is, in Figure 5 In step S11, a support body is attached to the z-axis side of the formed second component 210. Furthermore, as... Figure 5 As shown in step S12, when the second component 210 (semiconductor thin film) is peeled off from the mother substrate 211, the second component 210 is peeled off from the mother substrate 211 while being supported by the support body. Additionally, as... Figure 5 As shown in step S13, the engagement of the second component 210 with the first component 110 is performed while the second component 210 is supported by the aforementioned support body. After the second component 210 is engaged with the first component 110, the support body is detached from the second component 210. Figure 5 In steps S11 to S13, the illustration of the support body is omitted for the convenience of clearly showing the second component 210.

[0086] The RF circuit module 300 configured in this embodiment achieves the following effects.

[0087] (a) The first component 110 is flip-mounted onto the module substrate 310 (mounted face down), so there is no need to configure pads for wire bonding and space for wires, thus reducing the overall size of the RF circuit module 300.

[0088] (b) The first component 110 has a first conductor protrusion 116 connected to the substrate-side electrode 311 of the module substrate 310, and the second component 210 has a second conductor protrusion 216 connected to the substrate-side electrode 312 of the module substrate 310. Therefore, the first circuit formed in the first component 110 and the second circuit formed in the second component 210 are electrically connected to the module substrate 310, respectively. Furthermore, the first circuit and the second circuit are electrically connected via inter-component connection conductors without passing through the module substrate 310, so it is not necessary to form wiring for connecting the first circuit and the second circuit on the module substrate 310. This reduces the overall size of the RF circuit module 300.

[0089] (c) It can efficiently dissipate and expel heat generated by amplifiers and the like in the second circuit formed in the second component 210, so it can realize an RF circuit module 300 that is not limited by heat dissipation and can be miniaturized, or a small RF circuit module 300 with high heat dissipation.

[0090] [Power Amplifier Circuit]

[0091] The power amplifier circuit according to the first embodiment will be described.

[0092] Figure 6 This is the circuit diagram of power amplifier circuit 61. (For example...) Figure 6 As shown, the power amplifier circuit 61 includes a first circuit 400, a second circuit 500, and a matching circuit 601 (first matching circuit). The first circuit 400 includes an amplifier control circuit 401 and a termination circuit 411 (first termination circuit). The second circuit 500 includes an amplifier 501 (first amplifier) ​​and a bias circuit 502. The bias circuit 502 includes bias transistors 503, 504, and 505, a resistor element 506, and a current source 507.

[0093] The power amplifier circuit 61 is a circuit that amplifies the input signal RFin (RF signal) input from the input terminal 31 and outputs the output signal RFout from the output terminal 32.

[0094] In this embodiment, amplifier 501, bias transistor 503, transistors 504 and 505 are described as components composed of bipolar transistors such as HBTs. However, amplifier 501, bias transistor 503, transistors 504 and 505 may also be composed of other transistors such as MOSFETs (Metal-oxide-semiconductor Field-Effect Transistors). In this case, the base, collector, and emitter may be referred to as the gate, drain, and source, respectively.

[0095] Amplifier 501 has: a base connected to input terminal 31; a collector connected to power supply voltage supply node N2, which supplies power supply voltage Vcc1, and connected to output terminal 32 via matching circuit 601; and a grounded emitter. Amplifier 501 amplifies the input signal RFin supplied through input terminal 31 and outputs the amplified signal (first amplified signal).

[0096] The bias circuit 502 supplies a bias voltage to the base of amplifier 501 via a bias transistor 503 connected to the base of amplifier 501 through its emitter. Specifically, the bias transistor 503 has: a collector connected to the power supply voltage supply node N1 that supplies the power supply voltage Vcc0; a base; and an emitter connected to the base of amplifier 501 via a resistor element 506.

[0097] Transistors 504 and 505, along with current source 507, supply a bias voltage of a specified level to the base of bias transistor 503. Specifically, current source 507 is connected to the base of bias transistor 503. Transistor 504 has: a collector connected to current source 507 and the base of bias transistor 503; a base connected to the collector; and an emitter. Hereinafter, the connection between the collector and base of the transistor is referred to as a diode connection. Transistor 505 has: a collector connected by a diode and connected to the emitter of transistor 504; and an emitter grounded. Transistors 504 and 505 function as diodes, thus generating a voltage drop equivalent to two diodes in the paths between the collector and emitter of transistor 504 and between the collector and emitter of transistor 505. In other words, the voltage between the collector and base of transistor 504, with ground as a reference, is a voltage equivalent to a voltage drop of two diodes. This voltage is supplied to the base of the bias transistor 503.

[0098] Amplifier control circuit 401 controls the amplification operation of second circuit 500. In this embodiment, amplifier control circuit 401 controls the power supply voltage Vcc1 applied to the collector of amplifier 501. Additionally, amplifier control circuit 401 controls the power supply voltage Vcc0 applied to the collector of bias transistor 503 and the current Ib output by current source 507. Thus, the level of bias voltage supplied to the base of amplifier 501 is controlled.

[0099] The termination circuit 411 attenuates harmonic components at integer multiples (e.g., more than twice) of the fundamental frequency of the output signal RFout. In this embodiment, the termination circuit 411 is an LC series circuit having a capacitor 411a and an inductor 411b (first inductor). The capacitor 411a has a first terminal connected to the collector of the amplifier 501 and a second terminal. The inductor 411b has a first terminal connected to the second terminal of the capacitor 411a and a second terminal grounded.

[0100] Matching circuit 601 adjusts the impedance of the fundamental frequency of the output signal RFout when observing the subsequent stage circuit of amplifier 501 from amplifier 501. In other words, matching circuit 601 is disposed between amplifier 501 and the subsequent stage circuit to match the impedance between amplifier 501 and the subsequent stage circuit. In this embodiment, matching circuit 601 is disposed between the collector of amplifier 501 and output terminal 32, and is an LC series circuit having capacitor 601a and inductor 601b. Capacitor 601a has a first terminal connected to the collector of amplifier 501 and a second terminal. Inductor 601b has a first terminal connected to the second terminal of capacitor 601a and a second terminal connected to output terminal 32.

[0101] Figure 7 This is a diagram illustrating the configuration of the power amplifier device 11 within the power amplifier circuit 61. Figure 7 The configuration of the power amplifier circuit 61 in a cross-section of the power amplifier device 11 is schematically shown.

[0102] like Figure 7 As shown, the amplifier control circuit 401 and the terminal circuit 411 are disposed in the first component 110. The amplifier 501 and the bias circuit 502 are disposed in the second component 210. The input terminal 31, the output terminal 32, and the matching circuit 601 are disposed, for example, on the module substrate 310.

[0103] The terminal circuit 411 is connected to the collector of amplifier 501 via inter-component connection conductor 351a. Inter-component connection conductor 351a is one type of inter-component connection conductor. The base of amplifier 501 is connected to bias circuit 502 and to input terminal 31 via second conductor protrusion 216. The emitter of amplifier 501 is grounded in module substrate 310 via second conductor protrusion 216. The collector of amplifier 501 is connected to output terminal 32 via second conductor protrusion 216 and matching circuit 601.

[0104] Furthermore, while the configuration of the power amplifier circuit 61 including one amplifier 501 has been described, it is not limited thereto. The power amplifier circuit 61 may also be configured to include multiple amplifiers 501. Specifically, for example, it may be configured such that a primary amplifier is provided between the input terminal 31 and the amplifier 501.

[0105] [layout]

[0106] The layout of the power amplifier device according to the first embodiment will be described. Figure 8 This is a diagram showing an example of the layout of the first circuit 400 in the first component 110. Figure 9 This is a diagram showing an example of the layout of electrodes disposed on the z-axis side of the first component 110 and the second component 210. Figure 10 This is a diagram showing an example of the layout of the second circuit 500 in the second component 210. Figure 11 It is a magnified view of the area around amplifier 501 and heat sink 131. Figures 8-11 For example, a top view of the first component 110 or the second component 210 viewed from the z-axis side.

[0107] like Figures 8-11 As shown, the capacitor 411a constituting the terminal circuit 411 in the first circuit 400 is disposed approximately at the center of the first component 110 (see reference). Figure 8 An inductor 411b is provided on the y-axis side of capacitor 411a.

[0108] The generally rectangular region 252, to which the second component 210 is joined, is located on the y-axis+ side of the capacitor 411a (see reference). Figure 8 An amplifier control circuit 401 is provided on the y-axis + side and x-axis + side of capacitor 411a, a portion of which overlaps with region 252. A heat sink 131 is provided on the x-axis side of amplifier control circuit 401. Details of heat sink 131 will be described later. Amplifier 501 is configured to overlap a portion of heat sink 131 when viewed from the z-axis - side of first component 110 (see reference). Figure 11 ).

[0109] A plurality of first conductor protrusions 116 are provided on the inner side of the edge of the first component 110 (see reference). Figure 9 Alternatively, the first component 110 may be configured to have a first conductor protrusion 116. A plurality of second conductor protrusions 216 are provided inside region 252. The second conductor protrusion 216a of the plurality of second conductor protrusions 216 is configured to overlap with amplifier 501 when the first component 110 is viewed from the z-axis side (see reference). Figure 11The inter-component connecting conductor 351a connects the collector of amplifier 501 to the first end of capacitor 411a. Alternatively, a second conductor protrusion 216 may be provided in the second component 210.

[0110] A bias circuit 502 (see reference) in the second circuit 500 is provided on the x-axis+ side of the second component 210. Figure 10 Amplifier 501 is positioned on the x-axis side of bias circuit 502.

[0111] Specifically, transistors 504 and 505 are disposed near the edge of the second component 210 on the x-axis + side. A bias transistor 503 is disposed on the x-axis - side of transistors 504 and 505. A resistor element 506 is disposed on both the x-axis - side and the y-axis - side of the bias transistor 503, extending toward the y-axis - side.

[0112] An amplifier 501 is formed on the x-axis side of the resistor element 506. The amplifier 501 includes a plurality of transistor elements arranged along the y-axis direction. Here, the transistor element located on the y-axis side is referred to as transistor element 501a.

[0113] Figure 12 yes Figure 11 The sectional view shown is along the cut line XII-XII. (See figure.) Figure 11 as well as Figure 12 As shown, the first component 110 includes a Si substrate 121, a first insulating film 122, a second insulating film 123 and a third insulating film 124, which are stacked sequentially toward the z-axis.

[0114] An amplifier 501 is formed in the second component 210. An interlayer insulating film 224 is provided on the z-axis side of the amplifier 501. In detail, the transistor element (e.g., transistor element 501a) included in the amplifier 501 includes a collector layer 221C, a base layer 221B, and an emitter layer 221E stacked sequentially from the substrate 121 side.

[0115] More specifically, the collector layer 221C is bonded to the z-axis side of the first component 110. A base layer 221B and a collector electrode 222C connected to the collector layer 221C are provided on the z-axis side of the collector layer 221C. An emitter layer 221E and a base electrode 222B connected to the base layer 221B are provided on the z-axis side of the base layer 221B. An emitter electrode 222E connected to the emitter layer 221E is provided on the z-axis side of the emitter electrode 222E. For example, an emitter wiring 223E electrically connects the emitter electrodes 222E of transistor elements arranged along the y-axis is provided on the z-axis side of the emitter electrode 222E.

[0116] The collector layer 221C, base layer 221B, and emitter layer 221E are formed, for example, of n-type GaAs, p-type GaAs, and n-type InGaP, respectively. Alternatively, these semiconductor layers can also be formed of other compound semiconductors, such as InP, GaN, SiGe, and SiC.

[0117] A first insulating film 225 is provided on the z-axis side of the third insulating film 124 to cover the interlayer insulating film 224. Openings are provided in both the interlayer insulating film 224 and the first insulating film 225, allowing communication from the z-axis side to the emitter wiring 223E. An emitter pad 213a is electrically connected to the emitter wiring 223E through these openings. The emitter pad 213a protrudes from the first insulating film 225 towards the z-axis side. The emitter pad 213a is one form of the second component-side electrode 213 and is also part of the rewiring.

[0118] A second insulating film 226 is provided on the z-axis side of the first insulating film 225. An opening is provided in the second insulating film 226, allowing communication from the z-axis side to the emitter pad 213a. A second conductor protrusion 216a is connected to the emitter pad 213a through this opening. The second conductor protrusion 216a protrudes from the second insulating film 226 onto the z-axis side.

[0119] In the first component 110, a heat sink 131 is provided on the z-axis+ side of the amplifier 501. The heat sink 131 is formed by stacking a conductor layer and an insulating layer. Specifically, the heat sink 131 includes first component electrodes 132a and 132b extending substantially parallel to the xy plane, and rod-shaped first component through holes 133a and 133b extending along the z-axis. The first component electrode 132a is formed on the z-axis-side surface of the second insulating film 123. The first component electrode 132b is formed on the z-axis-side surface of the first insulating film 122. The first component through hole 133a connects the first component electrode 132a and the first component electrode 132b. The first component through hole 133b protrudes from the first component electrode 132b toward the z-axis+ side.

[0120] The heat generated in amplifier 501 is directed to module substrate 310 via emitter electrode 222E, emitter wiring 223E, emitter pad 213a, and second conductor protrusion 216a. Figure 12 Heat is dissipated (not shown in the figure), and heat is also dissipated to the substrate 121 through the third insulating film 124 and the heat sink 131. The substrate 121 is formed of Si, which has a high thermal conductivity, so the heat from the amplifier 501 is well dissipated in the first component 110.

[0121] Figure 13 yes Figure 11 The sectional view shown is along the cut line XIIV-XIIV. (See attached image.) Figure 11 as well as Figure 13 As shown, a first conductor protrusion 116a is provided on the y-axis + side of amplifier 501. The first conductor protrusion 116a is connected to the first component electrode 132a of heat sink 131 via a first component-side electrode 113a. The first component-side electrode 113a is part of the rewiring.

[0122] In detail, the first component side electrode 113a is connected to the first component electrode 132a of the heat sink 131 through openings provided in the first insulating film 225 and the third insulating film 124. The first conductor protrusion 116a is connected to the first component side electrode 113a through an opening provided in the second insulating film 226.

[0123] The heat generated in amplifier 501 is conducted to heat sink 131 and dissipated not only by moving to substrate 121 of Si, but also by passing through first component side electrode 113a and first conductor protrusion 116a to module substrate 310. Figure 13 (Not shown in the figure) It moves to dissipate heat. In this way, by setting up a path that allows heat to be efficiently conducted from the heat sink 131 to the module substrate 310, the heat generated in the amplifier 501 can be effectively dissipated.

[0124] Figure 14 It is a magnified view of the area surrounding the terminal circuit 411. Figure 15 yes Figure 14 The sectional view shown is along the cut line XV-XV. (See figure.) Figure 14 as well as Figure 15 As shown, the inter-component connecting conductor 351a has a rewiring 351aa and a rewiring through-hole 351ab, and is connected to the capacitor 411a.

[0125] In detail, the capacitor 411a has a MIM (Metal-Insulator-Metal) structure formed by a first component metal wiring 132ca extending parallel to the xy plane, a first component electrode 132cb, and a second insulating film 123 filling therebetween.

[0126] More specifically, a first component metal wiring 132ca is formed on the z-axis side of the first insulating film 122. This first component metal wiring 132ca is rectangular when viewed from the z-axis+ side and serves as the z-axis+ side electrode of the capacitor 411a. On the z-axis side of the first component metal wiring 132ca, a first component electrode 132cb is formed at a predetermined distance from the first component metal wiring 132ca. This first component electrode 132cb is rectangular when viewed from the z-axis+ side and serves as the z-axis side electrode of the capacitor 411a. When viewed from the z-axis+ side, the outline of the first component electrode 132cb is located inside the outline of the first component metal wiring 132ca. A second insulating film 123 is filled around the first component metal wiring 132ca and the first component electrode 132cb.

[0127] A first component electrode 132cd is formed on the z-axis side of the second insulating film 123. The first component electrode 132cd is rectangular when viewed from the z-axis side. A first component through hole 133ca is provided in the opening of the second insulating film 123 to connect the first component electrode 132cd and the first component electrode 132cb.

[0128] A rewiring 351aa, constituting an inter-component connecting conductor 351a, is provided on the z-axis side of the first insulating film 225. A rewiring through hole 351ab, connecting the rewiring 351aa to the first component electrode 132cd, is provided in the openings provided in the third insulating film 124 and the first insulating film 225.

[0129] Figure 16 yes Figure 14 The sectional view shown is along the cut line XVI-XVI. (See figure.) Figure 14 as well as Figure 16 As shown, the inductor 411b is formed by a first component metal wiring 132ce. Specifically, the first component metal wiring 132ce is formed on the z-axis side of the first insulating film 122, and the first component metal wiring 132ce is wound in the xy plane.

[0130] A first component metal wiring 132cc is formed on the z-axis side of the second insulating film 123, and the first component metal wiring 132cc extends along the y-axis when viewed from the z-axis+ side. An opening is provided in the second insulating film 123 to connect the first component metal wiring 132ca from the z-axis side. A first component through hole 133cb is provided in the opening to connect the first component metal wiring 132ca and the first component metal wiring 132cc.

[0131] The second insulating film 123 is also provided with an opening, which connects from the z-axis side to the vicinity of one end (first end) of the first component metal wiring 132ce. A first component through hole 133cc is provided in the opening to connect one end of the first component metal wiring 132ce to the first component metal wiring 132cc.

[0132] A wound first component metal wire 132ce is provided between one end of the first component metal wire 132ce and the first component metal wire 132ca.

[0133] [Second Implementation]

[0134] The power amplification device and power amplification circuit according to the second embodiment will be described. In the second embodiment and thereafter, descriptions of matters common to the first embodiment will be omitted, and only the differences will be described. In particular, the same effects resulting from the same configuration will not be mentioned sequentially in each embodiment.

[0135] Figure 17 This is the circuit diagram of power amplifier circuit 62. (For example...) Figure 17 As shown, the power amplifier circuit 62 according to the second embodiment differs from the power amplifier circuit 61 according to the first embodiment in that it also includes an input-side matching circuit, a termination circuit, an output-side matching circuit, and the frequency band of the input-side matching circuit can be changed.

[0136] The power amplifier circuit 62 includes a first circuit 400, a second circuit 500, inductors 651 (third inductor), 652 (fourth inductor), and 653 (fifth inductor). The first circuit 400 includes an amplifier control circuit 401, a switch control circuit 402, capacitors 421, 422, and 423, and switches 431, 432, 433, 434, 435, and 436. The second circuit 500 includes an amplifier 501 and a bias circuit 502.

[0137] Amplifier control circuit 401, switch control circuit 402, capacitors 421, 422, and 423, and switches 431, 432, 433, 434, 435, and 436 are formed in the first component 110. Amplifier 501 and bias circuit 502 are formed in the second component 210. Inductors 651, 652, and 653 are formed by rewiring, details of which will be described later. Switches 431, 432, 433, 434, 435, and 436 are, for example, field-effect transistors.

[0138] A termination circuit 701 (first termination circuit) is constituted by capacitor 421, inductor 651, and switches 431 and 432. The termination circuit 701 attenuates harmonic components at integer multiples (e.g., more than twice) of the frequency of the output signal RFout. In the termination circuit 701, the frequencies of the harmonic components to be attenuated are switched by switches 431 and 432.

[0139] In detail, capacitor 421 has a first terminal connected to the collector of amplifier 501 and a second terminal. Inductor 651 has a first terminal connected to the second terminal of capacitor 421, a center tap 651a, and a second terminal. Switch 431 has a first terminal connected to center tap 651a and a second terminal grounded. Switch 432 has a first terminal connected to the second terminal of inductor 651 and a second terminal grounded.

[0140] Switches 431 and 432 operate based on signals B1 and B2 received from the switch control circuit 402, respectively. Specifically, switches 431 and 432 switch their first and second terminals on and off, respectively. In this embodiment, switches 431 and 432 operate exclusively. Specifically, there is a first state where switch 431 is off (first and second terminals are not connected), and a second state where switch 432 is on (first and second terminals are connected), and a second state where switch 431 is on, and switch 432 is off.

[0141] The resonant frequency in the first state of the terminal circuit 701 is lower than the resonant frequency in the second state. Therefore, the first state is suitable for attenuating the lower frequency components, while the second state is suitable for attenuating the higher frequency components.

[0142] In this embodiment, the switch control circuit 402 performs the following control: for example, when the frequency band to which the output signal RFout belongs is low, it causes the terminal circuit 701 to transition to a first state, and when the frequency band to which the output signal RFout belongs is high, it causes the terminal circuit 701 to transition to a second state. Alternatively, the switch control circuit 402 may also perform the following control: when the frequency band to which the output signal RFout belongs is low, it causes the terminal circuit 701 to transition to a second state, and when the frequency band to which the output signal RFout belongs is high, it causes the terminal circuit 701 to transition to a first state.

[0143] Alternatively, the terminal circuit 701 can also be configured such that the second terminal of the inductor 651 is directly grounded, excluding the switch 432. In such a configuration, the frequency of the harmonic components to be attenuated can also be switched.

[0144] Matching circuit 702 (first matching circuit) is constructed using capacitor 422, inductor 652, and switches 433 and 434. Matching circuit 702 adjusts the impedance (hereinafter referred to as the first impedance) of the fundamental frequency of the output signal RFout when viewed from the amplifier 501's downstream circuitry. In matching circuit 702, the first impedance is switched via switches 433 and 434.

[0145] In detail, capacitor 422 has a first terminal and a second terminal connected to the collector of amplifier 501. Inductor 652 has a first terminal connected to the second terminal of capacitor 422, a center tap 652a, and a second terminal. Switch 433 has a first terminal connected to the center tap 652a and a second terminal connected to output terminal 32. Switch 434 has a first terminal connected to the second terminal of inductor 652 and a second terminal connected to output terminal 32.

[0146] Switches 433 and 434 operate based on signals B3 and B4 received from the switch control circuit 402, respectively. In this embodiment, switches 433 and 434 operate exclusively. Specifically, they are in a third state where switch 433 is off and switch 434 is on, and in a fourth state where switch 433 is on and switch 434 is off.

[0147] Generally, the impedance of inductor 652 increases at higher frequencies, so the first impedance of matching circuit 702 in the third state is greater than the first impedance of matching circuit 702 in the fourth state. In other words, the third state is suitable for impedance matching between amplifier 501 and subsequent circuits when the frequency band to which the output signal RFout belongs is lower, while the fourth state is suitable for impedance matching between amplifier 501 and subsequent circuits when the frequency band to which the output signal RFout belongs is higher.

[0148] In this embodiment, the switch control circuit 402 performs the following control: when the frequency band to which the output signal RFout belongs is low, the matching circuit 702 is switched to the third state; when the frequency band to which the output signal RFout belongs is high, the matching circuit 702 is switched to the fourth state. Alternatively, the switch control circuit 402 may also perform the following control: when the frequency band to which the output signal RFout belongs is low, the matching circuit 702 is switched to the fourth state; when the frequency band to which the output signal RFout belongs is high, the matching circuit 702 is switched to the third state.

[0149] Alternatively, the matching circuit 702 can also be configured to directly connect the second terminal of the inductor 652 to the output terminal 32 without the switch 434. In such a configuration, the first impedance can also be switched.

[0150] Matching circuit 703 (second matching circuit) is constructed using capacitor 423, inductor 653, and switches 435 and 436. Matching circuit 703 adjusts the impedance (hereinafter referred to as the second impedance) of the fundamental frequency of the input signal RFin when the amplifier 501 is viewed from input terminal 31. In matching circuit 703, the second impedance is switched by switches 435 and 436.

[0151] Specifically, switch 435 has a first terminal and a second terminal connected to input terminal 31. Switch 436 has a first terminal and a second terminal connected to input terminal 31. Inductor 653 has a first terminal connected to the second terminal of switch 436, a center tap 653a connected to the second terminal of switch 435, and a second terminal. Capacitor 423 has a first terminal connected to the second terminal of inductor 653 and a second terminal connected to the base of amplifier 501.

[0152] Switches 435 and 436 operate based on signals B5 and B6 received from the switch control circuit 402, respectively. In this embodiment, switches 435 and 436 operate exclusively. Specifically, it is a fifth state where switch 435 is off and switch 436 is on, and a sixth state where switch 435 is on and switch 436 is off.

[0153] Generally, the impedance of inductor 653 increases at higher frequencies, so the second impedance of matching circuit 703 in its fifth state is greater than that in its sixth state. In other words, the fifth state is suitable for impedance matching between amplifier 501 and the preamplifier circuit when the input signal RFin belongs to a lower frequency band, while the sixth state is suitable for impedance matching between amplifier 501 and the preamplifier circuit when the input signal RFin belongs to a higher frequency band.

[0154] In this embodiment, the switch control circuit 402 performs the following control: when the frequency band to which the input signal RFin belongs is low, the matching circuit 703 is switched to the fifth state; when the frequency band to which the input signal RFin belongs is high, the matching circuit 703 is switched to the sixth state. Alternatively, the switch control circuit 402 may also perform the following control: when the frequency band to which the input signal RFin belongs is low, the matching circuit 703 is switched to the sixth state; when the frequency band to which the input signal RFin belongs is high, the matching circuit 703 is switched to the fifth state.

[0155] Alternatively, the matching circuit 703 can be configured to directly connect the input terminal 31 to the first terminal of the inductor 653 without the switch 436. In such a configuration, the second impedance can also be switched.

[0156] [layout]

[0157] The layout of the power amplifier device 12 according to the second embodiment will be described.

[0158] Figure 18 This is a diagram showing an example of the layout of the first circuit 400 in the first component 110. Figure 19 This is a diagram showing an example of the layout of electrodes disposed on the z-axis side of the first component 110 and the second component 210. Figure 18 as well as Figure 19 For example, a top view of the first component 110 or the second component 210 viewed from the z-axis side. Furthermore, to make the explanation easier, in Figure 18 The location of amplifier 501 in the second circuit 500 is shown. Figure 19 The locations of capacitors 421, 422, and 423 are shown.

[0159] like Figure 18 as well as Figure 19 As shown, in the power amplifier device 12, capacitor 421 in the first circuit 400 is located approximately at the center of the first component 110 on the x-axis side. Inductor 651 and switches 431 and 432 are located on the y-axis side of capacitor 421. Capacitor 423 is located approximately at the center of the first component 110 on the x-axis+ side. Inductor 653 and switches 435 and 436 are located on the y-axis side of capacitor 423. Capacitor 422 is located approximately at the center of the first component 110 on the y-axis+ side. Inductor 652 and switches 433 and 434 are located on the x-axis side of capacitor 422.

[0160] A switch control circuit 402 is provided on the y-axis + side of capacitor 423 (see reference). Figure 18 A generally rectangular region 253, to which the second component 210 is joined, is located on the y-axis+ side of the switch control circuit 402. Additionally, an amplifier control circuit 401 is provided on the y-axis+ side of the switch control circuit 402, a portion of which overlaps with region 253. A heat sink 131 is provided on the x-axis-side of the amplifier control circuit 401. The amplifier 501 is configured to overlap a portion of the heat sink 131 when viewed from the z-axis-side top view of the first component 110.

[0161] Switches 431 and 432 are connected to the switch control circuit 402 via first component metal wiring 132ia and 132ib, respectively. Signals B1 and B2 are transmitted via first component metal wiring 132ia and 132ib, respectively. Switches 433 and 434 are connected to the switch control circuit 402 via first component metal wiring 132ic and 132id, respectively. Signals B3 and B4 are transmitted via first component metal wiring 132ic and 132id, respectively. Switches 435 and 436 are connected to the switch control circuit 402 via first component metal wiring 132ie and 132if, respectively. Signals B5 and B6 are transmitted via first component metal wiring 132ie and 132if, respectively.

[0162] Inter-component connecting conductor 351b connects the collector of amplifier 501 to the first terminal of capacitor 421 (see reference). Figure 19 Inter-component connection conductor 351c connects the collector of amplifier 501 to the first terminal of capacitor 422. Inter-component connection conductor 351d connects the base of amplifier 501 to the second terminal of capacitor 423. Inter-component connection conductors 351b, 351c, and 351d represent one method of inter-component connection.

[0163] Inductors 651, 652, and 653 are formed by redistribution 351e, 351f, and 351g, respectively. Details of redistribution 351e, 351f, and 351g will be described later.

[0164] Figure 20 This is a diagram showing an example of the layout of the second circuit 500 in the second component 210. Figure 20 Observation methods and Figure 18 Same. For example... Figure 20 As shown, the layout of the second circuit 500 is the same as that of the second circuit 500 in the first embodiment (refer to...). Figure 10 They are roughly the same.

[0165] Figure 21 It's enlarged. Figure 19 The diagram around the matching circuit 703 in the diagram. Figure 22 yes Figure 21 The sectional view shown is along the cut lines XXII-XXII. (See attached image.) Figure 21 as well as Figure 22 As shown, the inter-component connecting conductor 351d has a rewiring 351da and a rewiring via 351db, and is connected to the first end of the capacitor 423. The shape and configuration of the rewiring 351da and the rewiring via 351db are similar to those of the capacitor 423. Figure 14 as well as Figure 15 The rewiring 351aa and the rewiring via 351ab shown are the same.

[0166] Capacitor 423 has a MIM structure formed by a first component metal wiring 132da extending parallel to the xy plane, a first component electrode 132db, and a second insulating film 123 filling therebetween. The first component metal wiring 132da and the first component electrode 132db are... Figures 14-16 The first component metal wiring 132ca and the first component electrode 132cb shown are the same.

[0167] Additionally, the first component metal wiring 132dc, the first component electrode 132dd, and the first component via 133da and 133db (see reference) are located around them. Figure 22 )and Figure 14 as well as Figure 15 The first component metal wiring 132cc, the first component electrode 132cd, and the first component through holes 133ca and 133cb shown are all the same.

[0168] The first component has a through hole of 133dc (refer to...) Figure 21 The first component metal wiring 132dc, which is disposed on the z-axis side of the second insulating film 123, is connected to the rewiring 351g that constitutes the inductor 653. The rewiring 351g is disposed on the z-axis side of the first insulating film 225, and will be described in detail later.

[0169] The construction and surrounding electrodes of capacitors 421 and 422 are the same as those of capacitor 423.

[0170] Figure 23 It's enlarged. Figure 19 The diagram around the terminal circuit 701 in the diagram. Figure 24 yes Figure 23 The sectional view shown is along the cut lines XXIV-XXIV. (See attached image.) Figure 23 as well as Figure 24 As shown, the rewiring 351e constituting the inductor 651 is configured to be wound in the xy plane in the z-axis side of the first insulating film 225. The switch 431 is disposed on the substrate 121, the first insulating film 122, and the second insulating film 123.

[0171] Figure 25 yes Figure 23 The sectional view shown is along the cut line XXV-XXV. (See attached image.) Figure 23 as well as Figure 25 As shown, the center tap 651a of the inductor 651 is connected to the switch 431 through the rewiring via 351h, the first component metal wiring 132e, and the first component via 133e.

[0172] In detail, a first component metal wiring 132e is formed on the z-axis side of the second insulating film 123. A first component through-hole 133e is provided in the openings provided in the first insulating film 122 and the second insulating film 123, connecting the first component metal wiring 132e to the first end of the switch 431. A rewiring through-hole 351h is provided in the openings provided in the first insulating film 225 and the third insulating film 124, connecting the intermediate tap 651a to the first component metal wiring 132e.

[0173] The structures and surrounding electrodes of inductors 652 and 653 are the same as those of inductor 651.

[0174] [Third Implementation Method]

[0175] The power amplification device and power amplification circuit involved in the third embodiment will be described.

[0176] Figure 26 This is a diagram illustrating the configuration of the power amplifier device 13 within the power amplifier circuit 63. Figure 26 The configuration of the power amplifier circuit 63 in a cross-section of the power amplifier device 13 is schematically shown. Figure 26 As shown, the power amplifier circuit 63 of the third embodiment differs from the power amplifier circuit 61 of the first embodiment in that the capacitance of the capacitor in the terminal circuit can be changed.

[0177] The first circuit 400 in power amplifier circuit 63 and the first circuit 400 in power amplifier circuit 61 (see reference) Figure 7 In contrast, the alternative to the terminal circuit 411 includes the terminal circuit 412 and also includes the switch control circuit 402.

[0178] The terminal circuit 412 includes capacitors 412aa and 412ab, inductor 412b, switch 412ca and 412cb.

[0179] Inductor 412b has a first terminal and a second terminal connected to the collector of amplifier 501 in second component 210 via inter-component connection conductor 351i. Capacitor 412aa has a first terminal and a second terminal connected to the second terminal of inductor 412b. Switch 412ca has a first terminal connected to the second terminal of capacitor 412aa and a second terminal grounded. Capacitor 412ab has a first terminal connected to the second terminal of inductor 412b and a second terminal. Switch 412cb has a first terminal connected to the second terminal of capacitor 412ab and a second terminal grounded. Inter-component connection conductor 351i is, for example, inter-component connection conductor 351a (see reference). Figure 9 This is the wiring.

[0180] Switches 412ca and 412cb are the same switches as switch 431, and are activated based on signals B7 and B8 received from switch control circuit 402, respectively. In this embodiment, switch control circuit 402 controls switches 412ca and 412cb, for example, so that the combined capacitance of capacitors 412aa and 412ab increases when the frequency band of the output signal RFout is low. Specifically, switch control circuit 402 turns on both switches 412ca and 412cb.

[0181] On the other hand, the switch control circuit 402 controls switches 412ca and 412cb, such that the combined capacitance of capacitors 412aa and 412ab is reduced when the frequency band to which the output signal RFout belongs is high. Specifically, the switch control circuit 402 turns on either switch 412ca or 412cb.

[0182] In addition, the switch control circuit 402 can also be configured to control switches 412ca and 412cb so that the combined capacitance of capacitors 412aa and 412ab is smaller when the frequency band to which the output signal RFout belongs is lower, and the combined capacitance is larger when the frequency band to which the output signal RFout belongs is higher.

[0183] Furthermore, the configuration of the terminal circuit 412, which includes two groups of capacitors 412aa and switches 412ca, and another group of capacitors 412ab and switches 412cb, has been described. However, the terminal circuit 412 may also be configured to include three or more groups.

[0184] Alternatively, in the terminal circuit 412, an inductor may be provided instead of a capacitor, and a capacitor may be provided instead of an inductor.

[0185] Alternatively, a portion of the terminal circuit 412 may be disposed outside the first component 110. Specifically, for example, this could be achieved by providing rewiring 351e (see reference). Figure 19 In one configuration, an inductor (the second inductor) serves as an inter-component connection conductor 351i, thereby placing a portion of the inductor outside the first component 110. Alternatively, for example, an inductor 412b can be omitted, and instead, the first terminals of capacitors 412aa and 412ab are connected to the inter-component connection conductor 351i, which serves as a rewiring 351e, thereby placing the entire inductor outside the first component 110.

[0186] [Fourth Implementation Method]

[0187] The power amplification device and power amplification circuit according to the fourth embodiment will be described.

[0188] Figure 27 This is a diagram illustrating the configuration of the power amplifier device 14 within the power amplifier circuit 64. Figure 27 The diagram schematically illustrates the configuration of the power amplifier circuit 64 in a cross-section of the power amplifier device 14. For example... Figure 27 As shown, the power amplifier device 14 according to the fourth embodiment differs from the power amplifier device 11 according to the first embodiment in that the matching circuit is provided at the point on the first component 110.

[0189] The first circuit 400 in power amplifier circuit 64 and the first circuit 400 in power amplifier circuit 61 (see reference) Figure 7 In contrast, the alternative to the terminal circuit 411 includes the terminal circuit 411r and also includes the matching circuit 441.

[0190] The terminal circuit 411r is with Figure 7 The terminal circuit 411 shown is the same LC series circuit, but the order in which the capacitor and inductor are connected is different. That is, the inductor 411b in the terminal circuit 411r has a first terminal and a second terminal connected to the collector of the amplifier 501 in the second component 210 via the inter-component connection conductor 351i. The capacitor 411a has a first terminal connected to the second terminal of the inductor 411b and a second terminal grounded.

[0191] Matching circuit 441 is, for example, with Figure 7 The matching circuit 601 shown is the same LC series circuit, including capacitor 441a and inductor 441b.

[0192] Inductor 441b has a first end and a second end connected to the collector of amplifier 501 in second component 210 via inter-component connection conductor 351j. Capacitor 441a has a first end connected to the second end of inductor 441b and a second end connected to output terminal 32 in module substrate 310 via first conductor protrusion 116.

[0193] Furthermore, a portion of the matching circuit 441 may also be configured to be located outside the first component 110. Specifically, for example, this could be achieved by providing rewiring 351f (see reference). Figure 19 In this configuration, an inductor serves as an inter-component connection conductor 351j, thereby partially disposed outside the first component 110. Alternatively, for example, an inductor 441b may not be provided, but the first terminal of the capacitor 441a may be connected to the inter-component connection conductor 351j, which serves as an inductor such as a rewiring 351f, thereby entirely disposed outside the first component 110.

[0194] Figure 28 This is a diagram used to illustrate a modified example of the matching circuit 441c in the power amplifier circuit 64. For example... Figure 28 As shown, the matching circuit 441c and Figure 27 Compared to the matching circuit 441 shown, the circuit also includes inductor 441d, and the connection method of the subsequent stage of inductor 441b is different.

[0195] Specifically, capacitor 441a has a first end connected to the second end of inductor 441b and a second end grounded. Inductor 441d has a first end connected to the second end of inductor 441b and a second end connected to the output terminal 32 in module substrate 310 via a first conductor protrusion 116.

[0196] [Fifth Implementation]

[0197] The power amplification device and power amplification circuit according to the fifth embodiment will be described.

[0198] Figure 29 This is a diagram illustrating the configuration of the power amplifier device 15 within the power amplifier circuit 65. Figure 29 The diagram schematically illustrates the configuration of the power amplifier circuit 65 in a cross-section of the power amplifier device 15. For example... Figure 29 As shown, the power amplifier circuit 65 according to the fifth embodiment differs from the power amplifier circuit 64 according to the fourth embodiment in that the capacitance of the capacitor in the matching circuit can be changed.

[0199] The first circuit 400 in power amplifier circuit 65 and the first circuit 400 in power amplifier circuit 64 (see reference) Figure 27 In contrast, the alternative to matching circuit 441 includes matching circuit 442, and also includes switch control circuit 402. Matching circuit 442 includes capacitors 442a, 442b, 442c and 442d, inductors 442e and 442f, and switch 442g.

[0200] Matching circuit 442 adjusts the first impedance. Switch 442g switches the first impedance. Specifically, inductor 442e has a first terminal and a second terminal connected to the collector of amplifier 501 in second component 210 via inter-component connection conductor 351j. Capacitor 442a has a first terminal connected to the second terminal of inductor 442e and a second terminal grounded. Inductor 442f has a first terminal and a second terminal connected to the second terminal of inductor 442e. Capacitor 442b has a first terminal and a second terminal connected to the second terminal of inductor 442f. Switch 442g has a first terminal connected to the second terminal of capacitor 442b and a second terminal grounded. Capacitor 442c has a first terminal connected to the second terminal of inductor 442f and a second terminal grounded. Capacitor 442d has a first terminal connected to the second terminal of inductor 442f and a second terminal connected to output terminal 32 in module substrate 310 via first conductor protrusion 116.

[0201] Switch 442g is the same switch as switch 431, and it operates based on signal B9 received from switch control circuit 402. In this embodiment, switch control circuit 402 turns on switch 442g, for example, when the frequency band to which the output signal RFout belongs is low. On the other hand, switch control circuit 402 turns off switch 442g, for example, when the frequency band to which the output signal RFout belongs is high.

[0202] In addition, the switch control circuit 402 can also perform the following control: when the frequency band to which the output signal RFout belongs is low, the switch 442g is turned off, and when the frequency band to which the output signal RFout belongs is high, the switch 442g is turned on.

[0203] Alternatively, in the matching circuit 442, an inductor may be provided instead of a capacitor, and a capacitor may be provided instead of an inductor.

[0204] [Sixth Implementation Method]

[0205] The power amplification device and power amplification circuit according to the sixth embodiment will be described.

[0206] Figure 30 This is a diagram illustrating the configuration of the power amplifier device 16 within the power amplifier circuit 66. Figure 30 The diagram schematically illustrates the configuration of the power amplifier circuit 66 in a cross-section of the power amplifier device 16. For example... Figure 30 As shown, the power amplifier circuit 66 of the sixth embodiment differs from the power amplifier circuit 64 of the fourth embodiment at the point where the terminal circuit and the matching circuit are connected to the amplifier in the second component 210 via the same inter-component connecting conductor.

[0207] In this embodiment, the first component 110 is provided with a node N3 that is connected to the collector of the amplifier 501 in the second component 210 via an inter-component connecting conductor 351i. The first end of the inductor 411b in the terminal circuit 411r is connected to node N3. The first end of the inductor 441b in the matching circuit 441 is connected to node N3.

[0208] For example, by setting up rerouting 351e (see reference) Figure 19 Such an inductor (the second inductor) serves as the component connection conductor 351i, and can share a portion of the inductor of the terminal circuit 411r and a portion of the inductor of the matching circuit 441. Therefore, it is possible to reduce the space required for the inductor in the first component 110, making the power amplifier device 16 more compact.

[0209] Alternatively, instead of inductors 411b and 441b, the first ends of capacitors 411a and 441a can be connected to the inter-component connection conductor 351i, which serves as a rewiring 351e. With this configuration, all the inductors in the terminal circuit 411r and the matching circuit 441 can be shared, thus further reducing the space required for inductors in the first component 110 and making the power amplifier device 16 more compact.

[0210] Figure 31 This is a diagram used to illustrate a modified example of the matching circuit 441c, which is the matching circuit 441 in the power amplifier circuit 66. For example... Figure 31 As shown, the matching circuit 441c has a matching circuit with... Figure 28 The matching circuit 441c shown has the same configuration. In this modified example, the first terminal of the inductor 441b in the matching circuit 441c is connected to node N3.

[0211] [Seventh Implementation Method]

[0212] The power amplification device and power amplification circuit according to the seventh embodiment will be described.

[0213] Figure 32 This is a diagram illustrating the configuration of the power amplifier device 17 within the power amplifier circuit 67. Figure 32 The diagram schematically illustrates the configuration of the power amplifier circuit 67 in a cross-section of the power amplifier device 17. (See diagram for reference.) Figure 32 As shown, the power amplifier circuit 67 of the seventh embodiment differs from the power amplifier circuit 61 of the first embodiment at the point where the input signal is amplified by the differential amplifier circuit.

[0214] Power amplifier circuit 67 and power amplifier circuit 61 (refer to) Figure 7 Compared to the power amplifier circuit 61, it also includes a balanced converter 602. The first circuit 400 in the power amplifier circuit 67 is the same as the first circuit 400 in the power amplifier circuit 61 (see reference). Figure 7 Compared to the previous method, the alternative to the termination circuit 411 includes termination circuit 411r, and also includes termination circuit 413 (second termination circuit). The second circuit 500 in the power amplifier circuit 67 is different from the second circuit 500 in the power amplifier circuit 61 (see reference). Figure 7 Compared to the previous version, it also includes amplifier 501c (second amplifier).

[0215] In this embodiment, a balance converter 602 is disposed on the module substrate 310. Figure 32 The bias circuit 502 and input terminal 31 are omitted from the diagram. The amplifier control circuit 401 also controls the operation of amplifier 501c. Thus, a bias voltage is supplied to the base of amplifier 501c, similar to that supplied to the base of amplifier 501.

[0216] For example, at the base of amplifier 501 and the base of amplifier 501c, input signals RFin1 (first signal) and RFin2 (second signal) constituting balanced signals are supplied, respectively. Input signals RFin1 and RFin2 are generated, for example, by the input signal RFin, which is an unbalanced signal, being distributed into two signals with a phase difference of approximately 180° by a balancing converter.

[0217] Amplifier 501 amplifies the input signal RFin1 and outputs an amplified signal ARF1 (first amplified signal). Amplifier 501c has a base to which the input signal RFin2 is supplied, a power supply voltage supply node (not shown), a collector connected to the termination circuit 413 and the balancing converter 602, and an emitter grounded through a second conductor protrusion 216. Amplifier 501c amplifies the input signal RFin2 and outputs an amplified signal ARF2 (second amplified signal).

[0218] The terminating circuit 413 is an LC series circuit with the same configuration as the terminating circuit 411r, including a capacitor 413a and an inductor 413b. The inductor 413b has a first terminal and a second terminal connected to the collector of the amplifier 501c in the second component 210 via an inter-component connection conductor 351m. The capacitor 413a has a first terminal connected to the second terminal of the inductor 413b and a second terminal grounded. The inter-component connection conductor 351m has, for example, the same configuration as the inter-component connection conductor 351i.

[0219] The balanced converter 602 converts the amplified signals ARF1 from amplifier 501 and ARF2 from amplifier 501c into an unbalanced output signal RFout (the third amplified signal). Specifically, the balanced converter 602 synthesizes the amplified signals ARF1 and ARF2 to generate the output signal RFout. The balanced converter 602 outputs the output signal RFout to the output terminal 32 through the matching circuit 601.

[0220] In this embodiment, the balancing converter 602 has an inductor 602a (primary winding) and an inductor 602b (secondary winding). Inductor 602a has a first terminal connected to the collector of amplifier 501 via a second conductor protrusion 216, and a second terminal connected to the collector of amplifier 501c via a second conductor protrusion 216. Inductor 602b is electromagnetically coupled to inductor 602a, and has a first terminal grounded and a second terminal connected to matching circuit 601.

[0221] Matching circuit 601 adjusts the third impedance of the fundamental frequency of the output signal RFout when observing the subsequent circuit of balancing converter 602 from the perspective of balancing converter 602.

[0222] In this way, by configuring a large-sized balance converter 602 on the module substrate 310, the degree of freedom in the layout of the first component 110 and the second component 210 can be increased.

[0223] Furthermore, by configuring the terminal circuit 411r and the terminal circuit 413 in the first component 110, which is separate from the module substrate 310 that transmits the output signal RFout, isolation can be ensured, thus suppressing the mixing of harmonic components into the output signal RFout.

[0224] [Eighth Implementation Method]

[0225] The power amplification device and power amplification circuit according to the eighth embodiment will be described.

[0226] Figure 33 This is a diagram illustrating the configuration of the power amplifier device 18 within the power amplifier circuit 68. Figure 33 The diagram schematically illustrates the configuration of the power amplifier circuit 68 in a cross-section of the power amplifier device 18. For example... Figure 33 As shown, the power amplifier device 18 of the eighth embodiment differs from the power amplifier device 17 of the seventh embodiment in that the matching circuit is provided at the first component 110.

[0227] Power amplifier circuits 68 and 67 (see reference) Figure 32In contrast, the matching circuit 601 is replaced by the matching circuit 443 included in the first circuit 400. The matching circuit 443 includes capacitors 443aa, 443ab, and 443ac. Capacitor 443aa has a first terminal connected to the second terminal of the inductor 602b of the balance converter 602 in the module substrate 310 via a first conductor protrusion 116, and a second terminal grounded.

[0228] Capacitor 443ab has a first end connected to a first end of capacitor 443aa and a second end grounded. Capacitor 443ac has a first end connected to the first end of capacitor 443aa and a second end connected to an output terminal 32 in module substrate 310 via a first conductor protrusion 116.

[0229] [Ninth Implementation Method]

[0230] The power amplification device and power amplification circuit according to the ninth embodiment will be described.

[0231] Figure 34 This is a diagram illustrating the configuration of the power amplifier device 19 within the power amplifier circuit 69. Figure 34 The diagram schematically illustrates the configuration of the power amplifier circuit 69 in a cross-section of the power amplifier device 19. For example... Figure 34 As shown, the power amplifier circuit 69 according to the ninth embodiment differs from the power amplifier circuit 68 according to the eighth embodiment in that the capacitance of the capacitor in the matching circuit can be changed.

[0232] The first circuit 400 in power amplifier circuit 69 and the first circuit 400 in power amplifier circuit 68 (see reference) Figure 33 Compared to the first matching circuit, the alternative matching circuit 443 includes matching circuit 443a (first matching circuit) and also includes switch control circuit 402. Matching circuit 443a and matching circuit 443 (see reference) Figure 33 Compared to 443, it also includes switches 43ba and 443bb. Matching circuit 443a adjusts the third impedance in the same way as matching circuit 443. Switches 443ba and 443bb switch the third impedance.

[0233] Specifically, switch 443ba has a second terminal connected to the inductor 602b of the balance converter 602 in module substrate 310 via a first conductor protrusion 116, a first terminal connected to the first terminal of capacitor 443ac, and a second terminal connected to the first terminal of capacitor 443aa. Switch 443bb has a first terminal connected to the first terminal of switch 443ba, and a second terminal connected to the first terminal of capacitor 443ab.

[0234] Switches 443ba and 443bb are the same switches as switch 431, and are activated based on signals B10 and B11 received from switch control circuit 402, respectively. In this embodiment, switch control circuit 402 controls switches 443ba and 443bb such that the combined capacitance of capacitors 443aa and 443ab increases when the frequency band of the output signal RFout is low. Specifically, switch control circuit 402 turns on both switches 443ba and 443bb.

[0235] On the other hand, the switch control circuit 402 controls switches 443ba and 443bb, such that when the frequency band to which the output signal RFout belongs is high, the combined capacitance of capacitors 443aa and 443ab decreases. Specifically, the switch control circuit 402 turns on either switch 443ba or 443bb.

[0236] In addition, the switch control circuit 402 can also be configured to control switches 443ba and 443bb, so that when the frequency band to which the output signal RFout belongs is low, the combined capacitance of capacitors 443aa and 443ab becomes smaller, and when the frequency band to which the output signal RFout belongs is higher, the combined capacitance becomes larger.

[0237] Furthermore, the configuration of the matching circuit 443a, which includes two sets of capacitors 443aa and switches 443ba, has been described. However, the matching circuit 443a may also be configured to include three or more sets of capacitors.

[0238] [Tenth Implementation Method]

[0239] The power amplification device and power amplification circuit according to the tenth embodiment will be described.

[0240] Figure 35 This is a diagram illustrating the configuration of the power amplifier device 20 within the power amplifier circuit 70. Figure 35 The diagram schematically illustrates the configuration of the power amplifier circuit 70 in a cross-section of the power amplifier device 20. (See diagram for reference.) Figure 35 As shown, the power amplifier circuit 70 of the tenth embodiment differs from the power amplifier circuit 61 of the first embodiment in that it supplies power to the amplifier 501 via APT (Average Power Tracking) or ET (Envelope Tracking).

[0241] Power amplifier 20 and power amplifier 11 (see reference) Figure 7 Compared to the power amplifier circuit 70, it also includes a power supply 751. The first circuit 400 in the power amplifier circuit 70 is similar to the first circuit 400 in the power amplifier circuit 61 (see reference). Figure 7 In contrast, the alternative to the terminal circuit 411 includes the terminal circuit 411r.

[0242] Power supply 751 applies a power supply voltage to the collector of amplifier 501, for example, according to APT (Average Power Tracking) or ET (Envelope Tracking) methods.

[0243] Specifically, a node N4 is provided on the module substrate 310, which is connected to the collector of the amplifier 501 via a second conductor protrusion 216. The input terminal of the matching circuit 601 is the first terminal of the capacitor 601a (see reference). Figure 6 The power supply 751 is located outside the module substrate 310 and is connected to node N4 in the module substrate 310 via power supply terminal 33.

[0244] This configuration reduces the power consumption of amplifier 501, making amplifier 501 operate more efficiently.

[0245] [Eleventh Implementation Method]

[0246] The power amplification device and power amplification circuit according to the eleventh embodiment will be described.

[0247] Figure 36 This is a diagram used to illustrate the configuration of the power amplifier device 21 in the power amplifier circuit 71. Figure 37 It means Figure 36 Detailed diagrams of the 90-degree phase shift circuit 444 and the output matching circuit 445 are shown. Figure 36 as well as Figure 37 The diagram schematically illustrates the configuration of the power amplifier circuit 71 in a cross-section of the power amplifier device 21. For example... Figure 36 as well as Figure 37 As shown, the power amplifier circuit 71 of the eleventh embodiment differs from the power amplifier circuit 61 of the first embodiment at the point where it is amplified by the Dougherty amplifier.

[0248] The first circuit 400 in power amplifier circuit 71 and the first circuit 400 in power amplifier circuit 61 (refer to...) Figure 7 Compared to the previous method, the alternative to the terminal circuit 411 includes a terminal circuit 411r, and also includes a switch control circuit 402, a terminal circuit 413 (second terminal circuit), a 90-degree phase shift circuit 444, and an output matching circuit 445 (first matching circuit). The second circuit 500 in the power amplifier circuit 71 and the second circuit 500 in the power amplifier circuit 61 (see reference...) Figure 7 Compared to the previous version, it also includes amplifier 501c (second amplifier).

[0249] exist Figure 36 The bias circuit 502 and input terminal 31 are omitted from the diagram. In this embodiment, a distributor is provided in the pre-amplifier stage of amplifiers 501 and 501c, although not shown. The distributor distributes the input signal RFI into input signal RFI3 (first signal) and input signal RFI4 (second signal), which is approximately 90 degrees out of phase with respect to input signal RFI3.

[0250] Amplifier 501 is, for example, a peak amplifier, biased to Class C. When the power level of the input signal RFin4 indicates a specified power level, amplifier 501 amplifies the input signal RFin4 and outputs an amplified signal ARF4 (the second amplified signal).

[0251] The amplifier control circuit 401 also controls the operation of the amplifier 501c. Therefore, the base of the amplifier 501c is biased in the same way as the base of the amplifier 501. In this embodiment, the amplifier 501c is, for example, a carrier amplifier, and is biased to level A, level AB, or level B. That is, the amplifier 501 amplifies the input signal RFin3 and outputs the amplified signal ARF3 (first amplified signal) regardless of the power level of the input signal RFin3, such as the relatively small instantaneous input power of the tube.

[0252] The 90-degree phase shift circuit 444 shifts the phase of the amplified signal ARF3. Specifically, the 90-degree phase shift circuit 444 delays the phase of the amplified signal ARF3 by approximately 90°. Thus, in the subsequent stage of the 90-degree phase shift circuit 444, the phase of the amplified signal ARF3 can be aligned with the phase of the amplified signal ARF4.

[0253] The output matching circuit 445 combines the amplified signal ARF4 supplied from amplifier 501 via node N5 and the input signal RFin3 supplied from amplifier 501c via 90-degree phase shift circuit 444 and node N5 to generate the output signal RFout (the third amplified signal). Additionally, the output matching circuit 445 adjusts the fourth impedance of the fundamental frequency of the output signal RFout when observing the subsequent circuitry of amplifiers 501 and 501c. The output matching circuit 445 outputs the output signal RFout to the output terminal 32 through the first conductor protrusion 116.

[0254] In detail, the 90-degree phase-shifting circuit 444 includes capacitors 444aa, 444ab, 444ac, and 444ad, inductor 444b, and switches 444ca and 444cb (see reference). Figure 37 ).

[0255] The capacitor 444aa in the 90-degree phase-shifting circuit 444 has a first terminal connected to the collector of the amplifier 501c in the second component 210 via an inter-component connection conductor 351m, and a second terminal grounded via a first conductor protrusion 116. The capacitor 444ab has a first terminal connected to the first terminal of the capacitor 444aa, and a second terminal. The switch 444ca has a first terminal connected to the second terminal of the capacitor 444ab, and a second terminal connected to the second terminal of the capacitor 444aa.

[0256] Inductor 444b has a first terminal connected to the first terminal of capacitor 444aa and a second terminal connected to node N5.

[0257] Capacitor 444ac has a first terminal connected to node N5 and a second terminal grounded through a first conductor protrusion 116. Capacitor 444ad has a first terminal connected to node N5 and a second terminal. Switch 444cb has a first terminal connected to the second terminal of capacitor 444ad and a second terminal connected to the second terminal of capacitor 444ac.

[0258] Switches 444ca and 444cb are the same switches as switch 431, and are activated based on signals B12 and B13 received from switch control circuit 402, respectively. In this embodiment, switch control circuit 402 turns on switches 444ca and 444cb, for example, when the frequency band to which amplified signal ARF3 belongs is low. On the other hand, switch control circuit 402 turns off switches 444ca and 444cb, for example, when the frequency band to which amplified signal ARF3 belongs is high.

[0259] In addition, the switch control circuit 402 can also be configured to disconnect switches 444ca and 444cb when the frequency band to which the amplified signal ARF3 belongs is low, and to turn on switches 444ca and 444cb when the frequency band to which the amplified signal ARF3 belongs is high.

[0260] The output matching circuit 445 includes capacitors 445aa, 445ab, 445ac, 445ad, 445ae, 445af, and 445ag; inductors 445ba and 445bb; and switches 445ca, 445cb, and 445cc (see reference). Figure 37 ).

[0261] The capacitor 445aa in the output matching circuit 445 has a first terminal connected to node N5 and a second terminal grounded through the first conductor protrusion 116. The capacitor 445ab has a first terminal connected to the first terminal of the capacitor 445aa and a second terminal. The switch 445ca has a first terminal connected to the second terminal of the capacitor 445ab and a second terminal connected to the second terminal of the capacitor 445aa.

[0262] Inductor 445ba has a first terminal and a second terminal connected to node N5. Capacitor 445ac has a first terminal connected to the second terminal of inductor 445ba and a second terminal grounded through a first conductor protrusion 116. Capacitor 445ad has a first terminal connected to the first terminal of capacitor 445ac and a second terminal. Switch 445cb has a first terminal connected to the second terminal of capacitor 445ad and a second terminal connected to the second terminal of capacitor 445ac.

[0263] Inductor 445bb has a first terminal connected to the second terminal of inductor 445ba, and a second terminal. Capacitor 445ae has a first terminal connected to the second terminal of inductor 445bb, and a second terminal grounded through a first conductor protrusion 116. Capacitor 445af has a first terminal connected to the first terminal of capacitor 445ae, and a second terminal. Switch 445cc has a first terminal connected to the second terminal of capacitor 445af, and a second terminal connected to the second terminal of capacitor 445ae.

[0264] The capacitor 445ag has a first end connected to the second end of the inductor 445bb, and a second end connected to the output terminal 32 in the module substrate 310 via the first conductor protrusion 116.

[0265] Switches 445ca, 445cb, and 445cc are the same switches as switch 431, and are activated based on signals B14, B15, and B17 received from switch control circuit 402, respectively. In this embodiment, switch control circuit 402 turns on switches 445ca, 445cb, and 445cc, for example, when the frequency band to which the output signal RFout belongs is low. On the other hand, switch control circuit 402 turns off switches 445ca, 445cb, and 445cc, for example, when the frequency band to which the output signal RFout belongs is high.

[0266] In addition, the switch control circuit 402 can also be configured to disconnect switches 445ca, 445cb and 445cc when the frequency band to which the output signal RFout belongs is low, and to turn on switches 445ca, 445cb and 445cc when the frequency band to which the output signal RFout belongs is high.

[0267] [Twelfth Implementation Method]

[0268] The power amplification device and power amplification circuit according to the twelfth embodiment will be described.

[0269] Figure 38 This diagram illustrates the configuration of the power amplifier device 22 within the power amplifier circuit 72. Figure 38 The diagram schematically illustrates the configuration of the power amplifier circuit 72 in a cross-section of the power amplifier device 22. For example... Figure 38 As shown, the power amplifier circuit 72 of the twelfth embodiment differs from the power amplifier circuit 65 of the fifth embodiment at the point where the terminal circuit 411r and the matching circuit 442 are grounded externally to the first component 110.

[0270] In the second circuit 500 of the second component 210, a node N6 is provided between the emitter of the amplifier 501 and the second conductor protrusion 216.

[0271] In the first circuit 400 of the first component 110, the second end of the capacitor 442a constituting the matching circuit 442 is grounded in the module substrate 310 through the first conductor protrusion 116. Additionally, the second end of the capacitor 442c is grounded in the module substrate 310 through the first conductor protrusion 116.

[0272] The second terminal of capacitor 411a, which constitutes the terminal circuit 411r, is connected to node N6 via inter-component connection conductor 351n. In other words, the terminal circuit 411r is grounded in the module substrate 310 via inter-component connection conductor 351n, node N6, and the second conductor protrusion 216. Inter-component connection conductor 351n has, for example, the same configuration as inter-component connection conductor 351i.

[0273] For example, consider a configuration where the terminating circuit 411r and the matching circuit 442 are grounded to a common ground wire provided in the first component 110. However, in such a configuration, the possibility of harmonics transmitted by the terminating circuit 411r mixing into the matching circuit 442 through the common ground wire increases, so it is not preferred.

[0274] In contrast, as with the power amplifier circuit 72, by grounding the terminating circuit 411r in the module substrate 310 via the inter-component connection conductor 351n, the second component 210, and the second conductor protrusion 216, the path length between the terminating circuit 411r and the matching circuit 442 via the ground wire can be increased. This suppresses harmonics from the terminating circuit 411r entering the matching circuit 442 via the ground wire, thus enabling the supply of a lower-noise-level, higher-quality output signal RFout to the subsequent circuitry.

[0275] Furthermore, the configuration in which amplifier 501 and terminal circuit 411r are grounded in module substrate 310 via a common second conductor protrusion 216 has been described, but it is not limited to this. Amplifier 501 and terminal circuit 411r may also be configured to be grounded in module substrate 310 via separate second conductor protrusions 216.

[0276] Figure 39This is a diagram illustrating a modified configuration of the power amplifier device 18 in the power amplifier circuit 68. Figure 40 This is a diagram illustrating a modified arrangement of the power amplifier device 21 in the power amplifier circuit 71. For example... Figure 39 as well as Figure 40 As shown, power amplifier 22 (refer to) Figure 38 The grounding method of the terminal circuit 411r in ) can also be applied to the power amplifier device 18. Figure 33 (Ref.) and power amplifier 21 (Ref.) Figure 36 The terminal circuits 411r and 413 in )

[0277] In this case, in the second circuit 500 of the second component 210, a node N7 is provided between the emitter of the amplifier 501c and the second conductor protrusion 216.

[0278] The second terminal of capacitor 413a, which constitutes the terminal circuit 413, is connected to node N7 via inter-component connection conductor 351p. In other words, the terminal circuit 413 is grounded in the module substrate 310 via inter-component connection conductor 351p, node N7, and the second conductor protrusion 216. Inter-component connection conductor 351p has, for example, the same configuration as inter-component connection conductor 351i.

[0279] Furthermore, the configuration in which amplifier 501c and terminal circuit 413 are grounded in module substrate 310 via a common second conductor protrusion 216 has been described, but it is not limited to this. Amplifier 501c and terminal circuit 413 may also be configured to be grounded in module substrate 310 via separate second conductor protrusions 216.

[0280] Furthermore, in the power amplifier devices 11 to 22, the configuration in which the first circuit 400 in the first component 110 and the second circuit 500 in the second component 210 are electrically connected by a conductor formed in either the first component 110 or the second component 210, such as an inter-component connecting conductor, has been described, but the configuration is not limited to this. The first circuit 400 and the second circuit 500 may also be electrically connected by a bump or a wire connection.

[0281] Furthermore, the layout of the power amplifier circuits 63 to 72 in the power amplifier devices 13 to 22 can be achieved by appropriately combining the various parts of the layout of the power amplifier circuit 61 in the power amplifier device 11 and the various parts of the layout of the power amplifier circuit 62 in the power amplifier device 12.

[0282] Furthermore, the configuration of power amplifier devices 11-22 including module substrate 310 has been described, but it is not limited to this. Power amplifier devices 11-22 may also be configured without module substrate 310.

[0283] The exemplary embodiments of the present invention have been described above. Power amplifier devices 11-22 include a first component 110 having a first circuit 400, a second component 210 having a second circuit 500, and an inter-component connecting conductor electrically connecting the first circuit 400 and the second circuit 500. The second component 210 is mounted on the first component 110. The second circuit 500 includes an amplifier 501 that amplifies an RF signal and outputs an output signal RFout. The first circuit 400 includes an amplifier control circuit 401 that controls the operation of the second circuit 500. At least a portion of a termination circuit 411 is formed in the first component 110, and this termination circuit 411 is connected to the amplifier 501 via the inter-component connecting conductor, causing attenuation of harmonic components in the output signal RFout.

[0284] For example, when the termination circuit 411 is located in the second component 210, the termination circuit 411 is physically close to the transmission path of the output signal RFout, increasing the likelihood of harmonic components entering the transmission path. In contrast, by forming at least a portion of the termination circuit 411 in the first component 110, which is different from the second component 210 where the amplifier 501 is located, the termination circuit 411 can be located away from the transmission path of the output signal RFout. This suppresses the entry of harmonic components into the transmission path of the output signal RFout, thus suppressing the emission of harmonic components from the transmission path, and allowing the output signal RFout, with its harmonic components suppressed, to be supplied to subsequent circuits and other devices. Therefore, it is possible to suppress harmonics contained in the amplified signal amplified by the amplifier from entering other devices.

[0285] Additionally, in the power amplifier device 11, the terminal circuit 411 includes an inductor 411b formed in the first component 110.

[0286] In this way, by forming a large inductor 411b in the first component 110, most of the terminal circuit 411 can be formed in the first component 110, so that most of the terminal circuit 411 can be kept away from the transmission path of the output signal RFout.

[0287] Additionally, in the power amplifier device 12, the terminal circuit 701 includes a second inductor formed by an inter-component connecting conductor 351i, such as a rewiring 351e.

[0288] This configuration allows the second inductor to be easily positioned away from the transmission path of the output signal RFout. Furthermore, the inter-component connection conductor 351i functions as an inductor, thus effectively utilizing its space and increasing layout flexibility.

[0289] Additionally, in power amplifier 12, the terminating circuit 701 includes switches 431 and 432 for switching the frequency of the harmonic components to be attenuated. Furthermore, in power amplifier 13, the terminating circuit 412 includes switches 412ca and 412cb for switching the frequency of the harmonic components to be attenuated.

[0290] Generally, the frequency band of harmonics that a terminal circuit can attenuate is limited to a certain frequency range. With the above configuration, the frequency range of harmonics that can be effectively attenuated can be expanded by using switches 431 and 432 and switches 412ca and 412cb, so that power amplifier devices 12 and 13 can provide a high-quality output signal RFout with a wider frequency band and suppressing the mixing of harmonic components.

[0291] Additionally, in the power amplifier 12, a portion of a matching circuit 702 is formed in the first component 110. This matching circuit 702 adjusts the first impedance of the fundamental frequency of the output signal RFout when viewed from the amplifier 501's subsequent circuitry. The matching circuit 702 includes switches 433 and 434 for switching the first impedance. Furthermore, in the power amplifier 15, at least a portion of a matching circuit 442 for adjusting the first impedance is formed in the first component 110. The matching circuit 442 includes a switch 442g for switching the first impedance.

[0292] Generally, the frequency band that a matching circuit can match the impedance between circuits is limited to a certain frequency range. With the above configuration, the frequency range that can effectively match the impedance between amplifier 501 and its subsequent circuits can be expanded by switches 433 and 434 and switch 442g, thus enabling the power amplifier 12 to operate efficiently across a wider frequency band.

[0293] Additionally, in the power amplifier device 16, a portion of a termination circuit 411r is formed in the first component 110. A portion of a matching circuit 441 is also formed in the first component 110, which adjusts the first impedance of the fundamental frequency of the output signal RFout when viewed from the amplifier 501's subsequent circuitry. The termination circuit 411r and the matching circuit 441 are formed by inter-component connecting conductors 351i, such as the rewiring 351e, and include a second inductor connected to the amplifier 501.

[0294] With this configuration, a portion of the inductor in the terminal circuit 411r and a portion of the inductor in the matching circuit 441 can be shared, thus reducing the space required for the inductor in the first component 110 and making the power amplifier device 16 more compact.

[0295] Additionally, in the power amplifier 17, the RF signal includes input signals RFin1 and RFin2, which constitute a balanced signal. Amplifier 501 amplifies the input signal RFin1 and outputs an amplified signal ARF1. The second circuit 500 also includes amplifier 501c, which amplifies the input signal RFin2 and outputs an amplified signal ARF2. Amplifier control circuit 401 also controls the operation of amplifier 501c. At least a portion of a termination circuit 413 is formed in the first component 110, which is connected to amplifier 501c via inter-component connection conductor 351m, causing attenuation of harmonic components in the amplified signal ARF2.

[0296] Thus, in the configuration for differential amplification, by forming at least a portion of the termination circuit 413 in the first component 110, which is different from the second component 210 where the amplifier 501c is located, the termination circuit 413 can be moved away from the transmission path of the amplified signal ARF2. This suppresses the mixing of harmonic components into the amplified signal ARF2.

[0297] Additionally, the RF circuit module 300 includes a power amplifier 17 and a module substrate 310 having a substrate-side electrode 312. The second component 210 has a second conductor protrusion 216 connected to the substrate-side electrode 312 in the module substrate 310, and is flip-chip bonded to the module substrate 310 via the second conductor protrusion 216. A balanced converter 602 is provided on the module substrate 310 to convert the amplified signals ARF1 and ARF2 supplied through the second conductor protrusion 216 into an output signal RFout as an unbalanced signal.

[0298] In this way, by setting a larger balancing converter 602 on the module substrate 310, it is not necessary to ensure space for balancing converters in the second component 210 or the first component 110, so the size of the second component 210 and the first component 110 can be reduced.

[0299] Additionally, in the power amplifier device 19, the first component 110 has a first conductor protrusion 116 connected to the substrate-side electrode 311 in the module substrate 310, and is flip-chip bonded to the module substrate 310 via the first conductor protrusion 116. A matching circuit 443a is formed in the first component 110. This matching circuit 443a receives an output signal RFout from the balanced converter 602 via the first conductor protrusion 116, and adjusts the third impedance of the fundamental frequency of the output signal RFout when observing the subsequent circuitry of the balanced converter 602 from the balanced converter 602. The matching circuit 443a includes switches 443ba and 443bb for switching the third impedance.

[0300] Generally, the frequency range within which a matching circuit can match the impedance between circuits is limited. With the above configuration, the frequency range within which the impedance between the balanced converter 602 and its subsequent circuitry can be effectively matched can be expanded by switches 443ba and 443bb, thus enabling the power amplifier 19 to operate efficiently across a wider frequency band.

[0301] Additionally, in the power amplification device 21, the RF signal includes the assigned input signal RFin3 and an input signal RFin4 with a phase different from that of the input signal RFin3. When the power level of the input signal RFin4 indicates a predetermined power level or higher, the amplifier 501 amplifies the input signal RFin4 and outputs the amplified signal ARF4. The second circuit 500 also includes an amplifier 501c that amplifies the input signal RFin3 and outputs the amplified signal ARF3. The amplifier control circuit 401 further controls the operation of the amplifier 501c. At least a portion of a termination circuit 413 is formed in the first component 110, which is connected to the amplifier 501c via an inter-component connection conductor 351m, causing attenuation of the harmonic components of the amplified signal ARF3.

[0302] Thus, in the configuration of the Dougherty amplifier circuit, by forming at least a portion of the termination circuit 413 in the first component 110, which is separate from the second component 210 where the amplifier 501c is located, the termination circuit 413 can be moved away from the transmission path of the amplified signal ARF3. This suppresses the mixing of harmonic components into the amplified signal ARF3.

[0303] Furthermore, in the power amplifier device 21, the first circuit 400 includes a 90-degree phase shift circuit 444 that shifts the phase of the amplified signal ARF3. Moreover, the 90-degree phase shift circuit 444 includes switches 444ca and 444cb that switch the amount of phase shift.

[0304] Generally, phase-shifting circuits can only shift the phase of a signal by 90° within a narrow frequency range. In other words, it is difficult to shift the phase of a signal by 90° over a wider frequency band. With the above configuration, the amount of phase shift of the amplified signal ARF3 can be switched by switches 444ca and 444cb. Therefore, the shift amount can be switched according to the frequency of the amplified signal ARF3, and the phase of the amplified signal ARF3 can be shifted by, for example, 90° over a wider frequency band.

[0305] Furthermore, in the power amplifier device 21, an output matching circuit 445 is formed in the first component 110. This output matching circuit 445 synthesizes the amplified signals ARF3 and ARF4 to generate an output signal RFout, and adjusts the fourth impedance of the fundamental frequency of the output signal RFout when observing the subsequent circuits of amplifiers 501 and 501c. The output matching circuit 445 includes switches 445ca, 445cb, and 445cc for switching the fourth impedance.

[0306] Generally, the frequency range within which a matching circuit can match the impedance between circuits is limited. With the above configuration, even in the configuration of the Dougherty amplifier circuit, the frequency range within which the impedance between amplifiers 501 and 501c and their subsequent circuits can be effectively matched can be expanded by switches 445ca, 445cb, and 445cc. Therefore, a wider frequency band can be covered, enabling the power amplifier 21 to operate efficiently.

[0307] Additionally, the RF circuit module 300 includes a power amplifier 22 and a module substrate 310 having a substrate-side electrode 312. The second component 210 has a second conductor protrusion 216 connected to the substrate-side electrode 312 in the module substrate 310. The amplifier 501 is grounded through the second conductor protrusion 216. The terminal circuit 411r is grounded through the second component 210 and the second conductor protrusion 216.

[0308] For example, when a matching circuit is provided in the first component 110, a configuration is considered where the termination circuit 411r and the matching circuit are grounded to a common ground wire provided in the first component 110. However, in such a configuration, the possibility of harmonics transmitted by the termination circuit 411r entering the matching circuit through the common ground wire increases, so it is not preferred. As described above, by grounding the termination circuit 411r in the module substrate 310 through the second component 210 and the second conductor protrusion 216, the length of the path between the grounded termination circuit 411r and the matching circuit can be increased. As a result, harmonics can be suppressed from entering the matching circuit from the termination circuit 411r through the ground wire, so a high-quality output signal RFout with a low harmonic noise level can be supplied to the subsequent circuit. In addition, for example, the ground path of the amplifier 501 and the ground path of the termination circuit 411r can share the second conductor protrusion 216, so the number of second conductor protrusions 216 can be reduced.

[0309] Additionally, the RF circuit module 300 includes a power amplifier device 18 or 21, and a module substrate 310 having a substrate-side electrode 312. The second component 210 has a second conductor protrusion 216 connected to the substrate-side electrode 312 in the module substrate 310. The amplifier 501c is grounded via the second conductor protrusion 216. The terminal circuit 413 is grounded via the second component 210 and the second conductor protrusion 216.

[0310] For example, when a matching circuit is provided in the first component 110, a configuration is considered where the termination circuit 413 and the matching circuit are grounded to a common ground wire provided in the first component 110. However, in such a configuration, the possibility of harmonics transmitted by the termination circuit 413 entering the matching circuit through the common ground wire increases, so it is not preferred. As described above, by configuring the termination circuit 413 to be grounded in the module substrate 310 through the second component 210 and the second conductor protrusion 216, the path length between the termination circuit 413 and the matching circuit through the ground wire can be increased. As a result, harmonics can be suppressed from entering the matching circuit from the termination circuit 413 through the ground wire, so a lower noise level and higher quality output signal RFout can be supplied to the subsequent circuit. In addition, for example, the ground path of the amplifier 501c and the ground path of the termination circuit 413 can share the second conductor protrusion 216, so the number of second conductor protrusions 216 can be reduced.

[0311] Additionally, the RF circuit module 300 includes any one of the power amplifier devices 11 to 22, and a module substrate 310 having substrate-side electrodes 311 and 312. The first component 110 has a first conductor protrusion 116 connected to the substrate-side electrode 311 in the module substrate 310, and is flip-chip bonded to the module substrate 310 via the first conductor protrusion 116. The inter-component connection conductor is a conductor formed on either the first component 110 or the second component 210, and electrically connects the first circuit 400 and the second circuit 500 without passing through the module substrate 310. The second component 210 has a second conductor protrusion 216 connected to the substrate-side electrode 312 in the module substrate 310.

[0312] Thus, by flip-chip bonding the first component 110 to the module substrate 310, there is no need for solder pads for wire bonding and space for wires, thereby reducing the overall size of the power amplifier devices 11-22. Furthermore, by having a first conductor protrusion 116 connected to the substrate-side electrode 311 of the module substrate 310 in the first component 110, and a second conductor protrusion 216 connected to the substrate-side electrode 312 of the module substrate 310 in the second component 210, the first circuit 400 and the second circuit 500 can be electrically connected to the module substrate 310 respectively. Moreover, by using inter-component connection conductors to electrically connect the first circuit 400 and the second circuit 500 without passing through the module substrate 310, it is not necessary to form wiring on the module substrate 310 to connect the first circuit 400 and the second circuit 500. Therefore, the overall size of the power amplifier devices 11-22 can be reduced. Furthermore, the heat generated by the amplifier 501 and the like in the second circuit 500 formed in the second component 210 can be conducted along two paths: a heat dissipation path toward the first component 110 and a heat dissipation path toward the module substrate 310, thus enabling efficient heat dissipation and heat removal. As a result, it is possible to realize power amplifier devices 11-22 that are miniaturized without being limited by heat dissipation, or power amplifier devices 11-22 that are small and have high heat dissipation.

[0313] Additionally, the RF circuit module 300 includes any one of the power amplifiers 11 to 22 and a module substrate 310 having a substrate-side electrode 312. The second component 210 has one or more second conductor protrusions 216 connected to the substrate-side electrode 312 in the module substrate 310. The second conductor protrusion 216a of the one or more second conductor protrusions 216 is configured to overlap with the amplifier 501 when the second component 210 is viewed from the z-axis side.

[0314] With this configuration, the heat generated in the amplifier 501 can be efficiently conducted to the module substrate 310 through the second conductor protrusion 216a and dissipated through the module substrate 310, thus effectively suppressing the temperature rise of the amplifier 501.

[0315] In addition, in the power amplifier devices 11 to 22, a heat sink 131 is provided in the first component 110 at a position that overlaps with the amplifier 501 when the second component 210 is viewed from the z-axis side.

[0316] With this configuration, the heat generated in amplifier 501 can be efficiently conducted to heat sink 131 and dissipated efficiently in heat sink 131, thus effectively suppressing the temperature rise of amplifier 501.

[0317] Additionally, in the power amplifier device 12, the terminating circuit 701 includes an inductor 651 having a first terminal connected to the amplifier 501, a center tap 651a, and a grounded second terminal. Furthermore, the terminating circuit 701 includes a switch 431, which is a switch having a first terminal connected to the center tap 651a and a grounded second terminal, switching between the conduction and deconduction of the first and second terminals.

[0318] With this configuration, the effective length of the inductor 651 can be switched by a simple configuration based on the switch 431 connected to the center tap 651a, thus the switching of the inductor in the terminal circuit 701 can be easily realized.

[0319] Additionally, in the power amplifier 12, the matching circuit 702 includes an inductor 652 having a first terminal connected to the amplifier 501, a center tap 652a, and a second terminal connected to the output terminal 32. Furthermore, the matching circuit 702 includes a switch 433, which is a switch having a first terminal connected to the center tap 652a and a second terminal connected to the output terminal 32, switching between the conduction and deconduction of the first and second terminals.

[0320] With this configuration, the effective length of the inductor 652 can be switched by a simple configuration based on the switch 433 connected to the center tap 652a, thus the switching of the inductor in the matching circuit 702 can be easily realized.

[0321] Additionally, in the power amplifier device 12, at least a portion of a matching circuit 703 is formed in the first component 110. This matching circuit 703 adjusts the second impedance of the amplifier 501 relative to the fundamental frequency of the input signal RFin when viewed from the input terminal 31. The matching circuit 703 includes an inductor 653 having a first terminal connected to the input terminal 31, a center tap 653a, and a second terminal connected to the amplifier 501 via a capacitor 423. Furthermore, the matching circuit 703 includes a switch 435, which is a switch having a first terminal connected to the input terminal 31 and a second terminal connected to the center tap 653a, switching the first terminal and the second terminal between conduction and deconduction.

[0322] With this configuration, the effective length of the inductor 653 can be switched by a simple configuration based on the switch 435 connected to the center tap 653a, thus the switching of the inductor in the matching circuit 703 can be easily realized.

[0323] Furthermore, in the power amplifier devices 11-22, the first component 110 is an elemental semiconductor component, and the second component 210 is a compound semiconductor component.

[0324] With this configuration, a high-performance amplifier 501 can be formed from a compound semiconductor in the second component 210. Furthermore, in the first component 110, an elemental semiconductor suitable for forming FETs or the like can be used as the material, thus enabling the formation of switches or the like in the first component 110.

[0325] In addition, in the power amplifier devices 11 to 22, the thermal conductivity of the first component 110 is greater than that of the second component 210.

[0326] With this configuration, the amount of heat dissipated from the amplifier 501 in the second component 210, which has lower thermal conductivity, is smaller. However, this heat is conducted to the first component 110 through the inter-component connecting conductor, thereby enabling the heat to be dissipated in the first component 110. As a result, the temperature rise of the amplifier 501 can be effectively suppressed.

[0327] In addition, in the power amplifier devices 11 to 22, the thickness of the second component 210 is thinner than the thickness of the first component 110.

[0328] In this way, by mounting the thinner second component 210 onto the thicker first component 110, the overall thickness can be reduced even if the power amplifier devices 11-22 are a stacked structure of two chips.

[0329] Furthermore, the embodiments described above are for the purpose of facilitating understanding of the present invention and are not intended to limit or interpret the scope of the invention. The present invention can be modified / improved without departing from its spirit, and the present invention also includes its equivalents. That is, any appropriate design changes made to the embodiments by those skilled in the art that possess the features of the present invention are included within the scope of the present invention. For example, the elements, their configurations, materials, conditions, shapes, dimensions, etc., of each embodiment are not limited to the illustrative content and can be appropriately modified. In addition, the embodiments are illustrative, and of course, partial substitutions or combinations of the structures shown in different embodiments are possible; such substitutions or combinations that include the features of the present invention are included within the scope of the present invention.

Claims

1. An RF circuit module, comprising: The module substrate has electrodes for mounting components; The first component has a first circuit. The second component has a second circuit; and The connecting conductors between components electrically connect the first circuit and the second circuit without passing through the aforementioned module substrate. The second component is installed on the first component. The second circuit described above includes a first amplifier that amplifies the radio frequency signal to output a first amplified signal. The first circuit mentioned above includes a control circuit that controls the operation of the second circuit mentioned above. The first component is flip-mounted onto the module substrate. The first component described above has a first component-side conductor protrusion that connects to the electrode in the module substrate described above. The second component has a second component-side conductor protrusion that connects to the electrode in the module substrate. At least a portion of the first component has a first terminal circuit, which is connected to the first amplifier via an inter-component connecting conductor, thereby attenuating the harmonic components of the first amplified signal.

2. The RF circuit module according to claim 1, wherein, The aforementioned first terminal circuit includes a first inductor formed in the aforementioned first component.

3. The RF circuit module according to claim 1 or 2, wherein, The aforementioned first terminal circuit includes a second inductor formed by the connecting conductors between the aforementioned components.

4. The RF circuit module according to claim 1 or 2, wherein, The aforementioned first terminal circuit includes a switch for switching the frequency of the harmonic components to be attenuated.

5. The RF circuit module according to claim 1 or 2, wherein, At least a portion of the first component is formed with a first matching circuit, which adjusts the impedance of the fundamental frequency of the first amplified signal when viewed from the perspective of the subsequent stage circuit of the first amplifier. The first matching circuit includes a switch that switches the aforementioned impedance.

6. The RF circuit module according to claim 1 or 2, wherein, The first component is formed as a part of the first terminal circuit. The first component is formed as part of a first matching circuit, which adjusts the impedance of the fundamental frequency of the first amplified signal when viewed from the perspective of the subsequent stage circuit of the first amplifier. The aforementioned first terminal circuit and the aforementioned first matching circuit include a second inductor, which is formed by the inter-component connecting conductor and is connected to the aforementioned first amplifier.

7. The RF circuit module according to claim 1 or 2, wherein, The aforementioned wireless frequency signals include a first signal and a second signal that constitute a balanced signal. The first amplifier amplifies the first signal and outputs the amplified first signal. The second circuit further includes a second amplifier, which amplifies the second signal and outputs a second amplified signal. The aforementioned control circuit also controls the operation of the aforementioned second amplifier. At least a portion of the first component has a second terminal circuit, which is connected to the second amplifier via an inter-component connecting conductor, thereby attenuating the harmonic components of the second amplified signal.

8. The RF circuit module according to claim 1 or 2, wherein, The aforementioned wireless frequency signal includes a first assigned signal and a second signal with a phase different from the first signal. When the power level of the second signal is above a specified power level, the first amplifier amplifies the second signal and outputs a second amplified signal. The second circuit further includes a second amplifier, which amplifies the first signal and outputs the amplified first signal. The aforementioned control circuit also controls the operation of the aforementioned second amplifier. At least a portion of the first component has a second terminal circuit, which is connected to the second amplifier via an inter-component connecting conductor, thereby attenuating the harmonic components of the second amplified signal.

9. The RF circuit module according to claim 8, wherein, The first circuit mentioned above includes a phase-shifting circuit that shifts the phase of the first amplified signal. The phase-shifting circuit described above includes a switch that changes the amount of phase shift.

10. The RF circuit module according to claim 8, wherein, The first component includes a first matching circuit that combines the first amplified signal and the second amplified signal to generate a third amplified signal. Furthermore, the impedance of the fundamental frequency of the third amplified signal is adjusted when viewing the subsequent circuitry of the first and second amplifiers from their respective perspectives. The first matching circuit mentioned above includes a switch that switches the impedance.

11. The RF circuit module according to claim 1 or 2, wherein, A heat sink is provided in the first component at a position that overlaps with the first amplifier when viewed from above.

12. The RF circuit module according to claim 1 or 2, wherein, The aforementioned first terminal circuit includes: The third inductor has a first terminal connected to the first amplifier, a center tap, and a grounded second terminal; and A switch having a first terminal connected to the center tap of the third inductor and a grounded second terminal, the switch switching the first terminal and the second terminal between conduction and non-conduction.

13. The RF circuit module according to claim 1 or 2, wherein, At least a portion of the first component is formed with a first matching circuit, which adjusts the impedance of the fundamental frequency of the first amplified signal when viewed from the perspective of the subsequent stage circuit of the first amplifier. The first matching circuit mentioned above includes: The fourth inductor has a first terminal connected to the first amplifier, a center tap, and a second terminal connected to the output terminal; and A switch having a first end connected to the center tap of the fourth inductor and a second end connected to the output terminal, the switch switching the first end and the second end between being on and off.

14. The RF circuit module according to claim 1 or 2, wherein, At least a portion of the first component is formed with a second matching circuit, which adjusts the impedance of the first amplifier with respect to the fundamental frequency of the radio signal when viewed from the input terminal. The second matching circuit mentioned above includes: The fifth inductor has a first terminal connected to the first amplifier, a center tap, and a second terminal connected to the input terminal; and A switch having a first end connected to the center tap of the fifth inductor and a second end connected to the input terminal, the switch switching the first end and the second end between being on and off.

15. The RF circuit module according to claim 1 or 2, wherein, The first component mentioned above is a component of an elemental semiconductor. The second component mentioned above is a component of a compound semiconductor.

16. The RF circuit module according to claim 1 or 2, wherein, The thermal conductivity of the first component is greater than that of the second component.

17. The RF circuit module according to claim 1 or 2, wherein, The thickness of the second component is thinner than that of the first component.

18. An RF circuit module, which is the RF circuit module according to claim 7. A balance converter is provided on the above-mentioned module substrate. The balance converter converts the first amplified signal and the second amplified signal supplied through the second component side conductor protrusion into a third amplified signal as an unbalanced signal.

19. The RF circuit module according to claim 18, wherein, The first component has a first component-side conductor protrusion that connects to the electrode in the substrate, and the first component is flip-mounted to the substrate via the first component-side conductor protrusion. A first matching circuit is formed in the first component. The third amplified signal is supplied from the balanced converter through the conductor protrusion on the side of the first component. The impedance of the fundamental frequency of the third amplified signal is adjusted when observing the subsequent circuit of the balanced converter from the balanced converter. The first matching circuit includes a switch that switches the aforementioned impedance.

20. An RF circuit module, which is the RF circuit module according to any one of claims 7 to 10. The aforementioned second amplifier is grounded through the protruding conductor on the side of the aforementioned second component. The aforementioned second terminal circuit is grounded through the aforementioned second component and the protruding side conductor of the aforementioned second component.

21. An RF circuit module, which is the RF circuit module according to any one of claims 1 to 17; and The aforementioned first amplifier is grounded through the aforementioned second component side conductor protrusion. The aforementioned first terminal circuit is grounded through the aforementioned second component and the protruding side conductor of the aforementioned second component.

22. An RF circuit module, as described in any one of claims 1 to 17, wherein the first component is flip-mounted to the module substrate via a first component side conductor protrusion. The connecting conductor between the aforementioned components is a conductor formed in either the first component or the second component.

23. An RF circuit module, which is the RF circuit module according to any one of claims 1 to 17. The aforementioned second component has one or more second component side conductor protrusions. The aforementioned one second component side conductor protrusion or at least one of the aforementioned plurality of second component side conductor protrusions is configured to overlap with the aforementioned first amplifier when the aforementioned second component is viewed from above.

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