A silicon reaction apparatus

Abstract

The present application relates to a kind of silicon reaction devices, including cavity, silicon wafer and multiple air inlet parts, silicon wafer is arranged in the inside of cavity, multiple air inlet parts are all arranged in the top of cavity, the inner wall of air inlet part is configured as cambered surface, the inner wall of air inlet part has the same center as silicon wafer, multiple air inlet holes are arranged on the inner wall of air inlet part.The present application can improve the uniformity distribution of gas in silicon reaction device.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor manufacturing, in particular to a silicon reaction device. BACKGROUND

[0002] For the silicon reaction device under the prior art, the chamber is usually rectangular, the gas inlet structure is arranged on the inner wall of the top of the chamber, and the gas inlet structure is also usually rectangular. However, due to the process requirement, the silicon wafer is manufactured in a circular shape, which causes the distance between the gas inlet hole on each gas inlet structure and the center of the silicon wafer to be different, thereby causing poor gas uniformity in the silicon reaction device, and the nitrogen doping concentration result of the silicon wafer is not distributed in concentric circles. To solve the existing problems, it is necessary to provide a silicon reaction device for improving the uniformity of gas distribution, so as to improve the uniformity of gas distribution in the silicon reaction device and optimize the nitrogen doping concentration result. SUMMARY

[0003] The purpose of the present application is to provide a silicon reaction device to improve the uniformity of gas distribution in the silicon reaction device.

[0004] The purpose of the present application is achieved by the following technical solution. According to the silicon reaction device provided by the present application, the silicon reaction device comprises a cavity, a silicon wafer and a plurality of gas inlet parts. The silicon wafer is arranged inside the cavity, the plurality of gas inlet parts are arranged on the top of the cavity, the inner wall of the gas inlet part is formed as an arc surface, the inner wall of the gas inlet part has the same center as the silicon wafer, and a plurality of gas inlet holes are arranged on the inner wall of the gas inlet part.

[0005] In some embodiments, the plurality of gas inlet holes have the same length and shape.

[0006] In some embodiments, the diameter of the inner wall of the gas inlet part is greater than the diameter of the silicon wafer.

[0007] In some embodiments, the plurality of gas inlet holes are arranged at an angle of 0-45° with the top plane of the cavity.

[0008] In some embodiments, the silicon reaction device further comprises a buffer tail cavity and a gas extraction pipeline, a plurality of gas outlet holes are arranged on the side wall of the cavity, and the plurality of gas outlet holes are respectively communicated to the buffer tail cavity through the gas extraction pipeline.

[0009] In some embodiments, the gas extraction pipeline comprises a main pipeline and a plurality of branch pipelines. Each of the plurality of gas outlet holes is respectively communicated to the first end of each of the plurality of branch pipelines, the second end of each of the plurality of branch pipelines is communicated to the first end of the main pipeline, the second end of the main pipeline is communicated to the first end of the buffer tail cavity, and the second end of the buffer tail cavity is communicated to the gas extraction device.

[0010] In some embodiments, the silicon reaction device further comprises a carrier, which is arranged inside the cavity, and the silicon wafer is placed on the carrier, and the plurality of gas outlets are arranged at positions below the level of the carrier on the sidewall of the cavity.

[0011] In some embodiments, the plurality of gas outlets are located in regions outside the vertical projection of the carrier.

[0012] In some embodiments, the silicon reaction device further comprises an upper cover plate, which covers the top of the cavity, and the gas inlet part is fixed on the upper cover plate.

[0013] The beneficial effects of the present application at least include:

[0014] 1. By configuring the inner wall of the gas inlet part as a curved surface and making the inner wall of the gas inlet part have the same center as the silicon wafer, the orientation of the gas inlet holes arranged on the inner wall of the gas inlet part can be directed to the center of the silicon wafer, so that the process gas flows to the center of the silicon wafer immediately after being sprayed from the gas inlet holes, ensuring that the nitrogen doping concentration is distributed in concentric circles concentric with the center of the silicon wafer, and improving the uniformity of the gas in the cavity.

[0015] 2. By configuring each of the plurality of gas inlet holes to have the same length and shape, the flow path length of the process gas in the gas inlet holes can be made the same, which maximizes the consistency of the gas outlet amount and speed of each gas inlet hole, and is beneficial to the uniform distribution of the gas in the cavity.

[0016] 3. By arranging the gas outlets at positions below the carrier, the process gas can flow smoothly over the entire silicon wafer in cooperation with the gravitational action of the process gas, improving the uniform distribution of the gas on the surface of the silicon wafer.

[0017] 4. By arranging the buffer tail cavity, and the buffer tail cavity being connected in communication with the first, second, third and fourth gas outlets through the gas extraction pipeline, the buffer tail cavity can effectively prevent the pressure in the cavity from changing suddenly, avoid the particles in the cavity from being raised, and improve the uniform distribution of the gas in the cavity.

[0018] The above description is only a summary of the technical solutions of the present application. In order to more clearly understand the technical means of the present application, the content of the specification can be implemented, and in order to make the above and other purposes, features and advantages of the present application more obvious and easy to understand, the following preferred embodiments are described in detail below, and the accompanying drawings are described as follows. BRIEF DESCRIPTION OF DRAWINGS

[0019] Figure 1 The structure diagram of the silicon reaction device according to an embodiment of the present application;

[0020] Figure 2 A schematic diagram of the cavity and air outlet according to an embodiment of the present invention;

[0021] Figure 3 This is another schematic diagram of a silicon reactor according to one embodiment of the present invention. Detailed Implementation

[0022] To further illustrate the technical means of the present invention, the following detailed description of the specific implementation of the silicon reactor proposed according to the present invention is provided in conjunction with the accompanying drawings and preferred embodiments.

[0023] like Figure 1 As shown, the silicon reactor of the present invention includes a cavity 1, a silicon wafer 2, and multiple gas inlets 3. The cavity 1 is constructed in a rectangular shape, but it is understood that the present invention does not impose a specific limitation on the shape of the cavity 1. In one or more other embodiments, the shape of the cavity 1 may also be prismatic or cylindrical. To ensure process requirements, the silicon wafer 2 is constructed in a circular shape and is disposed in the center of the cavity 1 and placed on a stage 6. As shown in the figure, to achieve gas uniformity within the cavity 1, the present invention provides four gas inlets 3, which are respectively disposed on the four sides of the rectangular cavity 1. However, it is understood that the present invention does not impose a specific limitation on the number of gas inlets 3, and in one or more other embodiments, the number of gas inlets 3 may also be different. In a preferred embodiment, each of the plurality of air inlets 3 is disposed at the top of the cavity 1. The air inlet 3 has an irregular shape, and its inner wall is connected to the internal space of the cavity. The inner wall of the air inlet 3 is constructed as an arc surface, and the inner wall of the air inlet 3 has the same center as the silicon wafer 2. A plurality of air inlets 31 are provided on the inner wall of the air inlet 3, and the plurality of air inlets 31 are connected to the cavity 1 for introducing process gas (e.g., nitrogen) into the cavity 1. By constructing the inner wall of the air inlet 3 as an arc surface and making the inner wall of the air inlet 3 have the same center as the silicon wafer 2, the present invention allows the air inlets 31 on the inner wall of the air inlet 3 to face the center of the silicon wafer 2. This ensures that the process gas flows immediately to the center of the silicon wafer 2 after being ejected from the air inlets 31, guaranteeing that the nitrogen doping concentration is distributed in a concentric circle with the center of the silicon wafer 2, thereby improving the uniformity of the gas in the cavity 1.

[0024] In one or more embodiments, the silicon reactor of the present invention further includes a plurality of air inlet channels (not shown in the figure), each of which is connected to an air inlet 31. Each of the plurality of air inlets 31 has the same length and shape, which enables the flow path length of the process gas within the air inlet 31 to be the same, maximizing the consistency of the gas output and velocity of each air inlet 31, and facilitating the uniform distribution of gas within the cavity 1.

[0025] likeFigure 1 As shown, in one or more embodiments, the diameter of the arc-shaped inner wall of the air intake 3 is larger than the diameter of the silicon wafer 2. Since the size of the silicon wafer 2 varies, the diameter of the arc-shaped inner wall of the air intake 3 can be adjusted accordingly. The diameter of the arc-shaped inner wall of the air intake 3 can be adjusted within the range of 100mm-600mm.

[0026] In one or more embodiments, the air inlet 31 may be arranged parallel to the top plane of the cavity 1, which is also the plane where the air inlet 3 is located. In a preferred embodiment, to prevent airflow collision between the various air inlets 31, each air inlet 31 is configured to be at an angle of 0-45° (excluding 0°) to the top plane of the cavity 1. By configuring the air inlets 31 to be at an angle of 0-45° to the top plane of the cavity 1, the present invention further improves the uniformity of gas in the cavity 1.

[0027] In one or more embodiments, the silicon reactor of the present invention further includes an upper cover plate (not shown in the figure), which covers the top of the cavity 1. The air inlet 3 is fixed to the upper cover plate. In one or more embodiments, the air inlet 3 and the upper cover plate can be fixedly connected by threaded fittings. In some other embodiments, the air inlet 3 and the upper cover plate can be fixedly connected by snap-fit ​​fasteners. The outer wall of the cavity 1 is fixedly connected to the upper cover plate. In one or more embodiments, the outer wall of the cavity 1 and the upper cover plate can be fixedly connected by threaded fittings. In some other embodiments, the outer wall of the cavity 1 and the upper cover plate can be fixedly connected by snap-fit ​​fasteners.

[0028] like Figure 1 As shown, in one or more embodiments, the outer wall of the air intake 3 of the present invention is configured to conform to the shape of the cavity 1, because Figure 1 The cavity 1 described herein is rectangular in shape, so the outer wall of the air intake 3 is also constructed in a similar rectangular shape. In one or more embodiments, the present invention provides multiple air intakes 3 instead of constructing the air intakes 3 as a single unit, which facilitates the installation of the air intakes 3 and improves the installation efficiency of the air intakes 3.

[0029] like Figure 2 As shown, in one or more embodiments, a plurality of vent holes 11 are provided on the sidewall of the cavity 1, and the plurality of vent holes 11 can be evenly distributed on the four sides of the rectangular cavity 1. The present invention provides a plurality of vent holes 11 on the sidewall of the cavity 1, and the plurality of vent holes 11 are evenly distributed around the perimeter of the cavity 1. By having the plurality of vent holes 11 work simultaneously, a uniform negative pressure is formed around the perimeter of the cavity 1, thereby drawing the process gas from the center of the cavity 1 to the perimeter, ensuring that the process gas actually in contact with the silicon wafer 2 can be evenly distributed.

[0030] Specifically, such as Figure 2As shown, four gas outlets 11 can be arranged on the side wall of the cavity 1, which are respectively a first gas outlet 111, a second gas outlet 112, a third gas outlet 113 and a fourth gas outlet 114. The first gas outlet 111, the second gas outlet 112, the third gas outlet 113 and the fourth gas outlet 114 are uniformly distributed on the side wall of the cavity 1. It should be noted that the above only provides a preferred embodiment, and the number and arrangement of the gas outlets 11 are not limited in the present application. When implementing the technical solutions of the present application, the number and arrangement of the gas outlets 11 can be adjusted according to actual conditions. Preferably, the horizontal height of the first gas outlet 111, the second gas outlet 112, the third gas outlet 113 and the fourth gas outlet 114 is lower than the horizontal height of the carrier 6. The present application sets the gas outlets 11 at a position lower than the carrier 6, which can cooperate with the gravity of the process gas to make the process gas flow smoothly through the entire silicon wafer 2, thereby improving the uniform distribution of the gas on the surface of the silicon wafer 2.

[0031] As shown in the drawings, Figure 3 In one or more embodiments, the silicon reaction device of the present application further comprises a buffer tail cavity 4, which is a sealed cavity. The first gas outlet 111, the second gas outlet 112, the third gas outlet 113 and the fourth gas outlet 114 are respectively connected to the buffer tail cavity 4 through the gas extraction pipeline, and the buffer tail cavity 4 is connected to the gas extraction device (not shown in the figure), which is used to extract the process gas in the cavity 1. By arranging the buffer tail cavity 4 and connecting the buffer tail cavity 4 to the first gas outlet 111, the second gas outlet 112, the third gas outlet 113 and the fourth gas outlet 114 through the gas extraction pipeline, the buffer tail cavity 4 can effectively prevent the pressure in the cavity 1 from changing suddenly and avoid the particles in the cavity 1 from being raised, thereby improving the uniform distribution of the gas in the cavity.

[0032] The air extraction pipeline comprises a first branch pipeline 51, a second branch pipeline 52, a third branch pipeline 53, a fourth branch pipeline (not shown in the figure) and a main pipeline 54. The first ends of the first branch pipeline 51, the second branch pipeline 52, the third branch pipeline 53 and the fourth branch pipeline are respectively connected with the first gas outlet hole 111, the second gas outlet hole 112 and the third gas outlet hole 113 and the fourth gas outlet hole 114, the second ends of the first branch pipeline 51, the second branch pipeline 52, the third branch pipeline 53 and the fourth branch pipeline are connected with the first end of the main pipeline 54, the second end of the main pipeline 54 is connected with the first end of the buffer tail cavity 4, and the second end of the buffer tail cavity 4 is connected with the air extraction device. According to the present application, the first branch pipeline 51, the second branch pipeline 52, the third branch pipeline 53 and the fourth branch pipeline are connected with the first gas outlet hole 111, the second gas outlet hole 112 and the third gas outlet hole 113 and the fourth gas outlet hole 114 respectively, so that the first gas outlet hole 111, the second gas outlet hole 112 and the third gas outlet hole 113 and the fourth gas outlet hole 114 can form negative pressure at the same time, and the process gas can uniformly pass through the silicon wafer 2 and be taken out from the cavity 1 in multiple directions.

[0033] Preferably, a pressure control valve (not shown in the figure) is arranged on the air extraction pipeline, and the pressure control valve is electrically connected with the air extraction device. The pressure control valve can adjust the opening degree and the working state of the air extraction device according to the air pressure of the cavity 1, so as to control the air extraction amount and the air extraction speed of the air extraction device. When the air pressure in the cavity 1 is large, the pressure control valve can increase the opening to improve the power of the air extraction device, so as to improve the air extraction amount and the air extraction speed of the air extraction device; when the air pressure in the cavity 1 is small, the pressure control valve can reduce the opening to reduce the power of the air extraction device, so as to reduce the air extraction amount and the air extraction speed of the air extraction device. Preferably, the pressure control valve is arranged on the main pipeline 54. By arranging the pressure control valve on the main pipeline 54, the first branch pipeline 51, the second branch pipeline 52, the third branch pipeline 53 and the fourth branch pipeline can simultaneously extract air through the pressure control valve.

[0034] Preferably, in one or more embodiments, the gas outlet 11 is located in a region outside the vertical projection of the carrier 6, that is, when the gas outlet 11 and the carrier 6 are vertically projected on the bottom of the cavity 1, the gas outlet 11 is located outside the projected range of the carrier 6. If the gas outlet 11 is located within the projected range of the carrier 6, the negative pressure formed by the gas outlet 11 will make the process gas bypass the edge of the silicon wafer 2 first, then move downward and then enter the gas outlet 11, which will cause the gas path of the process gas to be very tortuous, and the carrier 6 will cause a certain buffering effect on the process gas. If the gas outlet 11 is located in a region outside the vertical projection of the carrier 6, the gas path of the process gas will be more direct, which can directly avoid the carrier 6 and slow down the buffering effect of the carrier 6 on the process gas, thereby effectively forming a negative pressure and enabling the process gas mixed with particulate matter to be smoothly guided out of the cavity 1.

[0035] The terms such as "comprise", "include", "have", and the like in the present disclosure are open-ended terms that mean "including but not limited to", and can be used interchangeably. The terms "or" and "and" used herein refer to the term "and / or", and can be used interchangeably unless the context clearly indicates otherwise.

[0036] The above description of the disclosed aspects is provided so that any person skilled in the art can carry out the present application. Various modifications to these aspects will be apparent to those skilled in the art, and the general principles defined herein can be applied to other aspects without departing from the scope of the present application. Therefore, the present application is not intended to be limited to the aspects shown herein, but is intended to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A silicon reaction apparatus, characterized in that, The device includes a cavity, a silicon wafer, and multiple air inlets. The silicon wafer is disposed inside the cavity, and the multiple air inlets are disposed at the top of the cavity. The inner wall of each air inlet is constructed as an arc surface, and the inner wall of the air inlet has the same center as the silicon wafer. Multiple air inlets are provided on the inner wall of each air inlet. All of the aforementioned air inlets have the same length and shape; The diameter of the inner wall of the air intake is larger than the diameter of the silicon wafer; Each of the multiple air inlets is configured such that the angle with the top plane of the cavity is greater than 0° and less than or equal to 45°. The silicon reaction apparatus further includes an upper cover plate, which covers the top of the cavity, and the air inlet is fixed to the upper cover plate; The silicon reaction apparatus further includes a buffer tail chamber and an exhaust pipe. Multiple exhaust holes are provided on the side wall of the chamber, and the multiple exhaust holes are respectively connected to the buffer tail chamber through the exhaust pipe. The silicon reaction apparatus further includes a stage, which is disposed inside the cavity. The silicon wafer is placed on the stage, and the plurality of vent holes are disposed on the side wall of the cavity at a position lower than the horizontal height of the stage.

2. The silicon reactor according to claim 1, characterized in that, The air extraction pipeline includes a main pipeline and multiple branch pipelines. Each of the multiple air outlets is connected to a first end of each of the multiple branch pipelines. The second end of each of the multiple branch pipelines is connected to the first end of the main pipeline. The second end of the main pipeline is connected to the first end of the buffer tail cavity. The second end of the buffer tail cavity is connected to the air extraction device.

3. The silicon reactor according to claim 1, characterized in that, All of the aforementioned air outlets are located outside the area of ​​the vertical projection of the stage.

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