Intelligent power modules, inverters and air conditioners

Abstract

The present invention discloses an intelligent power module, a frequency converter and an air conditioner, wherein the intelligent power module comprises: a metal substrate; a circuit wiring layer, which is arranged on one side surface of the metal substrate, and the circuit wiring layer is provided with a plurality of mounting positions; a power module, which is arranged at the mounting position corresponding to the circuit wiring layer; and a multi-layer insulation layer, which is sandwiched between the metal substrate and the circuit wiring layer. The present invention is conducive to improving the yield rate of the intelligent power module, and is also conducive to improving the stability and reliability of the intelligent power module.

Description

Technical Field

[0001] The present invention relates to the technical field of electronic circuits, and in particular to an intelligent power module, a frequency converter and an air conditioner. Background Art

[0002] At present, most intelligent power modules are based on metal heat dissipation substrates, and the heat generated during the operation of the power module is radiated outwards through the insulation layer and the metal heat dissipation substrate. However, this requires a relatively high insulation performance of the insulation layer. Once the insulation layer fails, the intelligent power module will short-circuit or even be easily broken down by high voltage. Summary of the invention

[0003] The main purpose of the present invention is to provide an intelligent power module, a frequency converter and an air conditioner, aiming to improve the yield rate of the intelligent power module, and improve the stability and reliability of the intelligent power module.

[0004] To achieve the above object, the present invention provides an intelligent power module, the intelligent power module comprising:

[0005] metal substrate;

[0006] A circuit wiring layer is arranged on one side surface of the metal substrate, and the circuit wiring layer is provided with a plurality of mounting positions;

[0007] A power module is arranged at a mounting position corresponding to the circuit wiring layer; and

[0008] Multiple insulating layers are sandwiched between the metal substrate and the circuit wiring layer; and the glass transition temperatures of the multiple insulating layers are different.

[0009] Optionally, the glass transition temperatures of the multiple insulating layers increase successively in a direction away from the circuit wiring layer.

[0010] Optionally, the glass transition temperatures of the multiple insulating layers decrease gradually in a direction away from the circuit wiring layer.

[0011] Optionally, the insulating layer includes multiple first insulating layers and multiple second insulating layers, and the multiple first insulating layers and the multiple second insulating layers are alternately arranged; wherein the glass transition temperature of the first insulating layer is different from the glass transition temperature of the second insulating layer.

[0012] Optionally, the first insulating layer is disposed close to the circuit wiring layer;

[0013] The second insulating layer is disposed close to the metal substrate;

[0014] Alternatively, the first insulating layer is disposed close to the metal substrate; and the second insulating layer is disposed close to the circuit wiring layer.

[0015] Optionally, the power module includes:

[0016] A driver chip is arranged at a mounting position corresponding to the circuit wiring layer; and

[0017] The inverter power module is arranged at a mounting position corresponding to the circuit wiring layer, and the inverter power module is electrically connected to the output end of the driving chip.

[0018] Optionally, the intelligent power module further includes a packaging shell, and the packaging shell is covered on the metal substrate to package the power module.

[0019] Optionally, the intelligent power module further includes a heat sink, and the heat sink is arranged on a side of the metal substrate away from the power module.

[0020] The present invention also provides a frequency converter, comprising the intelligent power module as described above.

[0021] The present invention further provides an air conditioner, comprising the intelligent power module as described above; or, comprising the frequency converter as described above.

[0022] The intelligent power module of the present invention arranges insulating layers with different glass transition temperatures between the circuit wiring layer and the metal substrate, so that when the intelligent power module is packaged and used, when the intelligent power module is subjected to thermal stress and / or mechanical force, the insulating layer with a low glass transition temperature is delaminated under the action of external force and / or high temperature, and the insulating layer with a high glass transition temperature is not affected by external force and / or high temperature, and will not break, and can continue to play an insulating role. The present invention is conducive to improving the yield rate of the intelligent power module, and is also conducive to improving the stability and reliability of the intelligent power module. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on the structures shown in these drawings without paying creative work.

[0024] Figure 1 A schematic diagram of the structure of an embodiment of an intelligent power module of the present invention;

[0025] Figure 2 It is a structural schematic diagram of another embodiment of the intelligent power module of the present invention;

[0026] Figure 3A schematic structural diagram of another embodiment of the intelligent power module of the present invention;

[0027] Figure 4 The figure is a schematic diagram of the circuit structure of an embodiment of a power module in the intelligent power module of the present invention.

[0028] Description of Figure Numbers:

[0029] Label name Label name 10 metal substrate 42 Second insulation layer 20 Circuit wiring layer 50 Conductive layer 30 Power Module 60 Package shell 40 Insulation layer 70 heat sink 41 First insulation layer 80 Pinout

[0030] The realization of the purpose, functional features and advantages of the present invention will be further explained in conjunction with embodiments and with reference to the accompanying drawings. DETAILED DESCRIPTION

[0031] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0032] The present invention provides an intelligent power module.

[0033] The intelligent power module is suitable for the frequency converter of the drive motor and various inverter power supplies to realize the functions of variable frequency speed regulation, metallurgical machinery, electric traction, servo drive, etc. It is especially suitable for driving the motor of the compressor of air conditioners, refrigerators, etc. When applied to variable frequency air conditioners, since the algorithm of the variable frequency drive is basically solidified in most cases, in order to save volume, improve anti-interference ability, and reduce the workload of peripheral electronic control board design, the drive circuit and power device will be integrated on the same substrate to form a highly integrated intelligent power module. When the intelligent power module is working, its power components are seriously heated. In order to accelerate the heat dissipation, most metal substrates such as aluminum metal substrates are used for heat dissipation. However, since the aluminum metal substrate base material belongs to a metal substrate, an insulating layer needs to be set between the metal substrate and the device layer to avoid short circuit, so that the upper and lower bridge arms of the inverter bridge are turned on at the same time, causing a short circuit, thereby burning the intelligent power module. Therefore, how to set the insulating layer is particularly important in the intelligent power module. Ideally, the three layers of materials, the device layer, the insulating layer and the metal substrate, should be tightly combined. However, the module packaging process is subject to thermal stress and mechanical force, especially in the module plastic sealing process, the temperature may reach the glass transition temperature of the insulating resin, which can easily lead to delamination between the insulating layer and the metal substrate and the device. Once the three are delaminated, water vapor will invade the delamination gap, affecting reliability. In severe cases, the insulation performance between the device layer and the metal substrate is damaged, resulting in a decrease in the insulation between the device layer and the metal base layer, or even failure. Alternatively, the insulating layer may crack due to stress. Once cracks appear, the insulation between the device layer and the metal base layer will also decrease, or even fail, resulting in a short circuit between the devices, making the intelligent power module unable to work properly.

[0034] To solve the above problems, refer to Figures 1 to 4 In one embodiment of the present invention, the intelligent power module comprises:

[0035] metal substrate 10;

[0036] A circuit wiring layer 20 is disposed on one side surface of the metal substrate 10, and the circuit wiring layer 20 is provided with a plurality of mounting positions;

[0037] A power module 30 is disposed at a mounting position corresponding to the circuit wiring layer 20; and

[0038] Multiple insulating layers 40 are sandwiched between the metal substrate 10 and the circuit wiring layer 20 ; and the glass transition temperatures of the multiple insulating layers 40 are different.

[0039] In this embodiment, the power module 30 includes a driver chip IC1 and a power device, wherein the power device can be a gallium nitride (GaN) power device, a Si-based power device or a SiC-based power device. In this embodiment, a gallium nitride (GaN) power device is preferably used. A plurality of power devices, for example four or six, form a power inverter bridge circuit, which is used to drive loads such as fans and compressors to work. The driver chip IC1 is arranged on the mounting position of the circuit wiring layer 20, and the circuit wiring layer 20 and the power device are electrically connected through conductive materials such as solder to form a current loop. The power device is arranged at the mounting position corresponding to the circuit wiring layer 20, and the heat generated during operation is conducted to the insulating layer 40 through the metal wiring layer, and the heat is conducted to the metal substrate 10 through the insulating layer 40, and the heat is dissipated through the metal substrate 10. Each power device can be a patch-type electronic component, or a bare die wafer, and a solder pad is arranged on a plurality of aluminum substrates, and a plurality of power components can be bonded to the corresponding mounting position by solder, conductive glue, etc.

[0040] In this embodiment, the metal substrate 10 can be a substrate made of aluminum or copper. In this embodiment, any one of an aluminum substrate, an aluminum alloy substrate, a copper substrate or a copper alloy substrate can be selected to implement it. Compared with metal substrates 10 made of other materials, the aluminum substrate is light in weight and has strong thermal conductivity. It can be used to make the radiator 70 panel. The weight of the aluminum profile is lighter under the same volume, and the light aluminum profile can be used to make a thin metal substrate 10, which is conducive to meeting the requirements of thin and light products. In addition, the aluminum substrate has strong corrosion resistance. The working environment of the intelligent power module is complex. The aluminum metal substrate 10 can form a dense oxide film on the surface, which can effectively prevent further corrosion inside. In addition, the aluminum substrate can also ensure the anti-EMS performance of the intelligent power module, and can effectively reduce electromagnetic interference to the intelligent power module and the external environment. The circuit wiring layer 20 forms corresponding circuits and corresponding mounting positions for each electronic component, i.e., pads, on the metal substrate 10 according to the circuit design of the intelligent power module. Specifically, after the insulating layer 40 is set on the metal substrate 10, copper foil is laid on the insulating layer 40, and the copper foil is etched according to the preset circuit design, thereby forming the circuit wiring layer 20. The shape of the metal substrate 10 can be determined according to the specific positions and sizes of the circuit wiring layer 20, the driver chip IC1, and other electronic components in the intelligent power module, and can be square, but is not limited to square.

[0041] The metal substrate 10 can be selected as a single-sided wiring board, that is, the circuit wiring layer 20 is arranged on one side surface of the metal substrate 10, and the multi-layer insulation layer 40 is sandwiched between the circuit wiring layer 20 and the metal substrate 10. After the metal substrate 10, the insulation layer 40 and the circuit wiring layer 20 are formed into one body, they serve as a mounting carrier for power switching tubes and driving devices, that is, the mounting substrate of the power module 30.

[0042] The insulating layer 40 is used to achieve electrical isolation and electromagnetic shielding between the circuit wiring layer 20 and the metal mounting substrate, and to reflect external electromagnetic interference, so as to avoid external electromagnetic radiation interfering with the normal operation of the power switch tube, and reduce the interference effect of electromagnetic radiation in the surrounding environment on the electronic components in the highly integrated intelligent power module. The insulating layer 40 can be made of materials such as thermoplastic glue or thermosetting glue to achieve a fixed connection and insulation between the mounting substrate and the circuit wiring layer 20. Specifically, it can be made of materials such as epoxy resin, silicon dioxide, aluminum oxide, and high thermal conductivity filling materials, among which the high thermal conductivity filling material can be boron nitride or aluminum nitride. Aluminum nitride and boron nitride have good insulation, high thermal conductivity, good heat resistance and thermal conductivity, so that aluminum nitride and boron nitride have high heat transfer capacity. In this way, during the operation of the intelligent power module, the power module 30 outputs driving power according to the received control signal to drive the motor and other loads to work. In this process, the heat generated by the power module 30 when it is working is conducted to the metal substrate 10 through the insulating layer 40, and then quickly dissipated through the metal substrate 10 to improve the heat dissipation speed of the power device. Since the insulating layer 40 doped with materials such as boron nitride or aluminum nitride has a better thermal conductivity, the problem of untimely heat dissipation or poor heat dissipation during the operation of the intelligent power module, which may burn the intelligent power module, is solved.

[0043] When making the insulating layer 40, epoxy resin, silicon dioxide, aluminum oxide, boron nitride, aluminum nitride and other materials can be mixed, and then the mixed insulating layer 40 material is heated; after cooling, the insulating layer 40 material is crushed, and then the insulating layer 40 material is rolled into shape by an ingot forming process to form the insulating layer 40.

[0044] In the process of manufacturing the mounting substrate of the power module 30, after the insulating layer 40 is set on the metal substrate 10, copper foil can be laid on the insulating layer 40, and the copper foil can be etched according to the preset circuit design to form the circuit wiring layer 20, or copper or copper alloy can be directly rolled to form the circuit line and the mounting position, and then the line and the mounting position are pressed on the insulating layer 40 by a hot pressing process through equipment. Alternatively, the insulating layer 40 formed with the circuit wiring layer 20 can also be formed into a whole by a hot pressing process or by using a thermal conductive adhesive, etc., to achieve the manufacturing of the mounting substrate.

[0045] It is understandable that the glass transition temperature (the temperature at which the insulating layer 40 changes from a glass state to a highly elastic state) of the insulating layer 40 varies with the different materials used for the insulating layer 40 and the different ratios between the various materials. The insulating layer 40 with a low glass transition temperature is prone to change in shape as the temperature rises, that is, it is easy to soften. The softened insulating layer 40 can withstand greater stress and is not prone to cracking and generating gaps. The insulating layer 40 with a high glass transition temperature is relatively less likely to soften and deform as the temperature rises, so the adhesion between the insulating layer 40 and the metal substrate 10 and between the insulating layer 40 and the circuit wiring layer 20 can be increased, and the circuit wiring layer 20 and the metal substrate 10 can be well fastened, and delamination is not likely to occur, which is conducive to improving the bonding force between the circuit wiring layer 20 and the metal substrate 10. In this embodiment, the material of the insulating layer 40 and the ratio between the various materials are adjusted to form an insulating layer 40 with different glass transition temperatures. Thus, multiple layers of insulating layers 40 with different glass transition temperatures are arranged between the circuit wiring layer 20 and the metal substrate 10, and the insulating layers 40 cooperate with each other to ensure that at least one of the insulating layers 40 can stably play an insulating role. Even if delamination occurs between one of the insulating layers 40 and the metal substrate 10 (or the circuit wiring layer 20 in contact with it, or the insulating layer 40 in contact with it) in contact with it, the reliability will not be affected. Among them, the number of layers of the insulating layer 40 can be two layers, or more than two layers. The more layers of the insulating layer 40, the better its insulation. At the same time, as the number of layers of the insulating layer 40 increases, its heat dissipation performance will also decrease. In order to take into account the insulation and heat dissipation efficiency of the intelligent power module, it can be set according to actual application requirements, which is not limited here. In some embodiments, the intelligent power module further includes: a conductive layer 50, which is sandwiched between the multiple insulating layers. The conductive layer 50 is arranged between the insulating layer and the circuit wiring layer. Even if there is a gap on the insulating layer 12, that is, the insulating layer is partially delaminated and a gap is generated, when the voltage applied to the air layer of the gap is higher than the dielectric breakdown voltage of the air, local discharge will occur. The electric field of the gap is reduced by dividing the voltage applied to the insulating sheet with a conductive foil. The potential difference between the conductive foil, the circuit layer and the aluminum layer is divided to the upper and lower insulating sheets, and the potential of the conductor foil is fixed to the middle potential, thereby improving the local discharge characteristics of the insulating layer. By inserting the conductive foil between the insulating layers, the local discharge caused by delamination is avoided, and the withstand voltage of the intelligent power module can be improved. Among them, the conductive layer 50 can be implemented by a conductive material of a metal material such as an aluminum film or a pass film. When a conductive material of a metal material is used to implement it, the metal conductive material can also consume the energy generated by dielectric breakdown in the form of heat.

[0046] The circuit wiring layer and the conductive layer 50 made of metal material are connected through the gap, which is also conducive to increasing the area of ​​electromagnetic shielding. By utilizing the electromagnetic shielding performance of metal, the conductive layer 50 can also be used as a shielding plate to shield the electromagnetic radiation generated by the circuit elements in the electromagnetic wave intelligent power module, thereby preventing the radiation and interference of electromagnetic waves. In addition, the grounding area of ​​the circuit wiring layer 20 is connected to the conductive layer 50, which can also increase the common ground area of ​​the circuit wiring layer, which is conducive to setting a large area of ​​shielding ground wire in the circuit wiring layer 20, and effectively suppressing electromagnetic interference propagating through space. Specifically, the circuit wiring layer 20 passes through the insulating layer conductive layer 50, so that the circuit elements on the circuit wiring layer 20 have the same potential and the switching devices in the internal circuit do not interfere with each other, which is conducive to reducing the generation of internal electromagnetic interference. The setting of the metal heat dissipation substrate can effectively absorb and shield external electromagnetic waves, thereby cutting off the propagation path of electromagnetic waves. The metal heat dissipation substrate can limit the radiation of electromagnetic energy inside the intelligent power module to the outside of the module, and also prevent external radiation from entering the intelligent power module.

[0047] The intelligent power module of the present invention sets an insulating layer 40 with different glass transition temperatures between the circuit wiring layer 20 and the metal substrate 10, so that when the intelligent power module is packaged and used, when the intelligent power module is subjected to thermal stress and / or mechanical force, the insulating layer 40 with a low glass transition temperature is delaminated under the action of external force and / or high temperature, and the insulating layer 40 with a high glass transition temperature is not affected by external force and / or high temperature, and will not break, and can continue to play an insulating role. The present invention is conducive to improving the yield rate of the intelligent power module, and is also conducive to improving the stability and reliability of the intelligent power module.

[0048] Reference Figures 1 to 4 In one embodiment, the glass transition temperatures of the multiple insulating layers 40 increase gradually in a direction away from the circuit wiring layer 20 .

[0049] Alternatively, the glass transition temperatures of the multiple insulating layers 40 decrease in sequence in a direction away from the circuit wiring layer 20 .

[0050] In this embodiment, the glass transition temperatures of the multiple insulating layers 40 are different, and they are arranged in sequence from the circuit wiring layer 20 to the metal substrate 10 in an increasing or decreasing arrangement, so that at least one insulating layer 40 can be tightly combined with the circuit wiring layer 20, or at least one insulating layer 40 is tightly combined with the metal substrate 10, so that even if the insulating layers 40 are delaminated due to thermal stress and / or mechanical force, the delaminated insulating layers 40 can withstand greater stress without causing the insulating layer 40 tightly combined with the metal substrate 10 or the insulating layer 40 tightly combined with the circuit wiring layer 20 to break, so that the insulating layer 40 can maintain its insulation effect and can still insulate between the circuit wiring layer 20 and the metal substrate 10.

[0051] It should be noted that when packaging the power module 30 and the mounting substrate, it is necessary to weld the circuit elements and pins on the circuit wiring layer 20, that is, the circuit elements and pins are welded to the circuit wiring layer 20, and it is also necessary to package the metal substrate 10, the insulating layer 40, the circuit wiring layer 20, the circuit elements and pins by using a packaging material such as a sealing resin. During the installation of the circuit elements and pins and the plastic sealing process, they are in a high temperature environment, and the mounting substrate needs to be fixed, and a certain mechanical force needs to be applied to the mounting substrate.

[0052] In the embodiment where the glass transition temperature of the multiple layers of the insulating layer 40 increases in sequence in the direction away from the circuit wiring layer 20, under high temperature conditions, the insulating layer 41 disposed close to the circuit wiring layer 20 softens first, and during plastic sealing, the pins, devices, etc. will generate stress on the insulating layer 41 below the circuit wiring layer 20, and the insulating layer 41 bears this part of the stress. At this time, due to the high temperature, the insulating layer 41 may cause delamination at the upper and lower interfaces. However, the glass transition temperature of the insulating layer 42 close to the mounting substrate is higher, and the insulating layer 41 acts as a buffer layer. The main stress has been buffered and absorbed by the insulating layer 41 thereon, so the insulating layer 42 can remain intact and continue to play an insulating role.

[0053] In the embodiment where the glass transition temperature of the multiple layers of the insulating layer 40 decreases in sequence in the direction away from the circuit wiring layer 20, under high temperature conditions, the insulating layer 41 set close to the metal substrate 10 softens first, and during plastic packaging, the pins, devices, etc. will generate stress on the insulating layer 41 above the metal substrate 10, and the insulating layer 41 bears this part of the stress. At this time, due to the high temperature, the insulating layer 41 may cause delamination at the upper and lower interfaces. However, the glass transition temperature of the insulating layer 42 close to the circuit wiring layer 20 is higher, and the pins, devices, etc. will play the role of a buffer layer for the stress above the metal substrate 10 transmitted through each layer of the insulating layer 40 to the insulating layer 41 close to the metal substrate 10. The main stress has been buffered and absorbed by the insulating layer 41 below it, that is, the insulating layer 40 with a high glass transition temperature will not be contacted with the harder metal substrate 10 due to external stress and cracked, so the insulating layer 42 can remain intact and continue to play an insulating effect.

[0054] Reference Figures 1 to 4 In one embodiment, the insulating layer 40 includes multiple first insulating layers 41 and multiple second insulating layers 42, and the multiple first insulating layers 41 and the multiple second insulating layers 42 are alternately arranged; wherein the glass transition temperature of the first insulating layer 41 is different from the glass transition temperature of the second insulating layer 42. wherein the first insulating layer 41 is arranged close to the circuit wiring layer 20; the second insulating layer 42 is arranged close to the metal substrate 10, or the first insulating layer 41 is arranged close to the metal substrate 10; the second insulating layer 42 is arranged close to the circuit wiring layer 20.

[0055] In this embodiment, the insulating layer 40 is set as an insulating layer 40 group in which two insulating layers 40 with different glass transition temperatures are a group. The insulating layer 40 groups are stacked, and the glass transition temperature of the first insulating layer 41 is lower than that of the second insulating layer 42. Under high temperature conditions, the first insulating layer 41 with a low glass transition temperature softens earlier than the one with a high glass transition temperature. At this time, if it is subjected to external force (for example, the pin will generate stress on the lower insulating layer 40 during plastic sealing), the first insulating layer 41 with a low glass transition temperature bears this part of the stress, and the first insulating layer 41 plays the role of a buffer layer. However, due to the change in the morphology of the first insulating layer 41, delamination may occur at the upper and lower interfaces. At this time, since the glass transition temperature of the insulating layer 42 is higher, the morphology of the second insulating layer 42 does not change with the increase in temperature. In addition, the main stress of the external force has been buffered by the first insulating layer 41, so the second insulating layer 42 can remain intact and will not be fissioned due to the action of external force, so that the second insulating layer 42 can continue to play an insulating effect.

[0056] Of course, in other embodiments, the second insulating layer 42, that is, the insulating layer 40 with a higher glass transition temperature, which is close to the metal substrate 10 and the circuit wiring layer 20, can be sandwiched with the first insulating layer 41 with a lower glass transition temperature. When subjected to external stress, the first insulating layer deforms and can play a buffering role, thereby ensuring that the second insulating layer 42 will not crack, so that the two layers of the second insulating layer 42 can be closely combined with the metal substrate 10, and closely combined with the circuit wiring layer 20 and broken, so that it can maintain the insulation effect and still insulate between the circuit wiring layer 20 and the metal substrate 10.

[0057] In one embodiment, the number of the conductive layer 50 is multiple layers;

[0058] One conductive layer 50 is sandwiched between every two insulating layers 40 .

[0059] In this embodiment, the insulating layer 40 and the conductive layer 50 are alternately arranged to form a composite structure of insulating layer 40-conductive layer 50-insulating layer 40-conductive layer 50-insulating layer 40-...-insulating layer 40, wherein the number of layers of the insulating layer 40 and the conductive layer 50 can be set to be the same or different, for example, both are set to three layers, or the number of layers of the insulating layer 40 is more than the number of layers of the conductive layer 50, so that the insulating layer 40 is connected and contacted between the metal substrate 10 and the circuit wiring layer 20. It can be understood that the more layers of the insulating layer 40 and the conductive layer 50, the greater the thickness of the mounting substrate, and the better the effect of absorbing the gap discharge generated by the circuit wiring layer 20. The fewer layers of the insulating layer 40 and the conductive layer 50, the smaller the thickness of the mounting substrate, and the smaller the volume of the intelligent power module. The number of layers of the insulating layer 40 and the conductive layer 50 is specifically set according to the actual effect, and is not limited here. The number of layers of the insulating layer 40 and the conductive layer 50 is specifically set according to the actual effect, and is not limited here. The conductive layer 50 may be made of conductive materials such as nickel, aluminum, copper, ferromagnetic, etc., and is disposed on the insulating layer 40 by electroplating or physical deposition.

[0060] Reference Figure 4 In one embodiment, the power module 30 includes:

[0061] A driving chip IC1 is arranged at a mounting position corresponding to the circuit wiring layer 20; and

[0062] The inverter power module 31 is disposed at a mounting position corresponding to the circuit wiring layer 20 , and the inverter power module 31 is electrically connected to the output end of the driver chip IC1 .

[0063] In this embodiment, the number of driver chips IC1 can be one, such as HVIC driver chip IC1, which is an integrated chip, in which four-way or six-way driving circuits are integrated, and can be specifically integrated and set according to the number of driven power switch tubes. The number of driver chips IC1 can also correspond to the number of power switch tubes, that is, each driver chip IC1 corresponds to driving one power switch tube to work. The driver chip IC1 is used to output a corresponding control signal when the intelligent power module is working to control the corresponding power switch tube to turn on, so as to output driving power to drive loads such as motors to work. When driving the power switch tube to turn on, a charging current is provided to the power switch tube so that the gate-source voltage of the power switch tube rises rapidly to the required value to ensure that the power switch tube switch can be turned on quickly. And during the conduction of the power switch tube, the gate-source voltage of the power switch tube is ensured to remain stable so that the power switch tube can be reliably turned on. The driver chip IC1 can also be provided with two driver chips IC1, namely, an upper bridge arm driver chip IC1 and a lower bridge arm driver chip IC1, and respectively drive the upper bridge arm power device and the lower bridge arm power device in the inverter power module 31 to work, and the inverter power module 31 and the driver chip IC1 can be electrically connected through circuit wiring and metal leads 21 to form a current loop. When one driver chip IC1 is used to implement, the driver chip IC1 integrates a high-voltage side driver unit and a low-voltage side driver circuit, and the high-voltage side driver unit and the low-voltage side driver unit are respectively used to drive the upper bridge arm power device and the lower bridge arm power device in the inverter power module 31 to work. The input end of the driver chip IC1 is connected to the main controller in the inverter or air conditioner, that is, MCU. The MCU integrates a logic controller, a memory, a data processor, etc., and a software program and / or module stored in the memory and can be run on the data processor. The MCU outputs a corresponding control signal to the driver chip IC1 by running or executing the software program and / or module stored in the memory, and calling the data stored in the memory, so as to drive the power switch tube in the inverter power module 31 to turn on / off according to the control signal of the main controller, thereby driving the fan, compressor, motor and other loads to work. The main controller can be independent of the intelligent power module or integrated into the intelligent power module. In actual application, the main controller and the intelligent power module are arranged on the electric control board and are electrically connected through circuit wiring or wires. Of course, in other embodiments, the main controller can be integrated into the intelligent power module to improve the integration of the intelligent power module.

[0064] The inverter power module 31 is provided with a plurality of power switch tubes, which may be gallium nitride (GaN) power switch tubes, Si-based power switch tubes or SiC-based power switch tubes. In practical applications, the number of power switch tubes may be four, or a multiple of four, or six, or a multiple of six. The six power switch tubes (T1 to T6) form an inverter circuit to drive the compressor to work.

[0065] Reference Figures 1 to 3 In one embodiment, the intelligent power module further includes a packaging shell 60 , and the packaging shell 60 is covered on the metal substrate 10 to package the power module 30 .

[0066] In this embodiment, the packaging shell 60 can be made of materials such as epoxy resin, aluminum oxide, and thermal conductive filling materials, wherein the thermal conductive filling material can be boron nitride or aluminum nitride. Aluminum nitride and boron nitride have good insulation, high thermal conductivity, good heat resistance and thermal conductivity, so that aluminum nitride and boron nitride have high heat transfer capacity. When making the packaging shell 60, materials such as epoxy resin, aluminum oxide, boron nitride or aluminum nitride can be mixed, and then the mixed packaging material is heated; after cooling, the packaging material is crushed, and then the packaging shell 60 material is rolled into shape by an ingot forming process to form the packaging shell 60, and the circuit wiring layer 20, the metal substrate 10, the driver chip IC1 and the power switch tube are encapsulated in the packaging shell 60. Or after the temperature sensor is fixed on the packaging shell 60 by a multiple injection molding process, the circuit wiring layer 20, the metal substrate 10, the driver chip IC1 and the power switch tube are encapsulated in the packaging shell 60.

[0067] In order to improve the heat dissipation efficiency of the intelligent power module, when a semi-encapsulated package is used, the metal substrate 10 of the intelligent power module can be partially exposed outside the packaging shell 60, that is, the packaging shell 60 is covered on the metal substrate 10 and the power module 30. The lower surface of the metal substrate 10 is exposed outside the package, which accelerates the heat dissipation of the power element. If the intelligent power module is also provided with a heat sink 70 to dissipate heat for the power switch tube, the surface of the metal substrate 10 exposed outside the packaging shell 60 of the intelligent power module can better fit the heat sink 70, thereby further improving the heat dissipation efficiency of the intelligent power module. Of course, in other embodiments, the metal substrate 10 can also be plastic-encapsulated in the packaging shell 60 to form a fully encapsulated packaging structure.

[0068] Reference Figure 1 and Figure 3 In one embodiment, the intelligent power module further includes a heat sink 70 , and the heat sink 70 is disposed on a side of the metal substrate 10 away from the power module 30 .

[0069] In this embodiment, the heat sink 70 can be made of a high thermal conductivity material with good heat dissipation effect such as aluminum or aluminum alloy, so that the heat generated by the electronic components in the power switch tube is conducted to the heat sink 70 through the insulating layer 40 and the metal substrate 10, further increasing the contact area between the heat generated by the power switch tube and the air, and improving the heat dissipation rate. The heat sink 70 can also be provided with a heat sink 70 body and a plurality of heat dissipation blades, and the plurality of heat dissipation blades are arranged at intervals on one side of the heat sink 70 body. In this way, the contact area between the heat sink 70 and the air can be increased, that is, when the heat sink 70 is working, the contact area between the heat on the heat sink 70 and the air is increased to accelerate the heat dissipation rate of the heat sink 70. At the same time, the material of the heat sink 70 can be reduced to avoid excessive cost of the heat sink due to excessive use of materials.

[0070] Reference Figure 1 and Figure 2 In one embodiment, the intelligent power module further includes a pin 80 , which is disposed on the circuit wiring layer 20 and is electrically connected to the power module 30 through a metal wire.

[0071] In this embodiment, the pin 80 can be implemented by a gull-wing pin 80 or a straight-insert pin 80. The present embodiment preferably uses a straight-insert pin 80. The pin 80 is welded on a low-thermal-conductivity insulating substrate, and the pad position on the mounting position corresponding to the circuit wiring layer 20 is electrically connected to the power switch tube and the driver chip IC130 through metal wires.

[0072] In another embodiment, one end of each pin 80 is fixed on the metal substrate 10 , and the other end of the pin 80 extends away from the metal substrate 10 , and the extension direction of the pin 80 is parallel to the plane where the metal substrate 10 is located.

[0073] Compared with the gull-wing pin 80, the pin 80 of this embodiment is arranged in parallel with the metal substrate 10, that is, the pin 80 is in a flat structure, so that the package shell 70 is embedded in the electric control board in the air conditioner and can fit with the electric control board. In addition, the pin 80 of the intelligent power module is fixed to the electric control board by soldering and conductive glue, and the extension section of the pin 80 fits with the electric control board, thereby preventing the pin 80 from breaking when the electric control board falls. In addition, the metal substrate 10 is partially embedded in the electric control board, so that the intelligent power module is installed on the electric control board, and the fastening of the intelligent power module and the electric control board is better, thereby preventing the intelligent power module and the electric control board from moving relative to each other during transportation or falling, so that the electric control board cannot work normally, or the intelligent power module is broken and damaged.

[0074] Reference Figures 1 to 4In one embodiment, the power switch tube is an IGBT;

[0075] The intelligent power module further includes a fast recovery diode, the number and position of the fast recovery diodes correspond to the IGBT;

[0076] The fast recovery diode and the IGBT are connected in anti-parallel.

[0077] In this embodiment, the number and position of the fast recovery diodes correspond to each power switch tube. In this embodiment, the number of fast recovery diodes can be selected as six, and the six fast recovery diodes are marked as D1, D2, D3, D4, D5, and D6 respectively. In this embodiment, the fast recovery diode is a high-power anti-parallel diode, which is used to achieve fast shutdown of the power switch tube. Among them, when the power switch tube is set as SiC MOSFET or SiC IGBT, or GaN HEMT device, the switching loss of the intelligent power module is reduced to a lower level, which is beneficial to saving energy and reducing module heating. The fast recovery diode can be selected to be a fast recovery diode made of Si material or a Schottky diode to achieve, which can ensure that the power consumption of the intelligent power module itself is low while reducing the production cost of the intelligent power module.

[0078] Reference Figures 1 to 4 In some embodiments, the power element can also be implemented by using a reverse-conducting IGBT, which integrates the fast recovery diode FRD packaged in anti-parallel with the IGBT power switch tube on the same chip, thereby reducing the volume of the inverter bridge circuit. Such a setting is conducive to improving power density, reducing the volume, manufacturing cost and packaging process of the highly integrated intelligent power module, and also helps to improve the reliability of the intelligent power module.

[0079] The present invention also provides a frequency converter, comprising the intelligent power module as described above.

[0080] The detailed structure of the intelligent power module can refer to the above-mentioned embodiment, which will not be repeated here; it can be understood that since the above-mentioned intelligent power module is used in the inverter of the present invention, the embodiments of the inverter of the present invention include all technical solutions of all the embodiments of the above-mentioned intelligent power module, and the technical effects achieved are also exactly the same, which will not be repeated here.

[0081] The frequency converter of the present invention can be applied to air conditioners, such as central air conditioners, wall-mounted air conditioners, cabinet air conditioners, mobile air conditioners, window air conditioners, etc., and can also be applied to refrigeration equipment such as refrigerators and freezers.

[0082] The present invention further provides an air conditioner, comprising the intelligent power module as described above; or, comprising the frequency converter as described above.

[0083] The detailed structure of the intelligent power module and the inverter can be referred to the above-mentioned embodiments, which will not be described in detail here; it can be understood that since the above-mentioned intelligent power module and the inverter are used in the air conditioner of the present invention, the embodiments of the air conditioner of the present invention include all technical solutions of all embodiments of the above-mentioned intelligent power module and the inverter, and the technical effects achieved are also exactly the same, which will not be described in detail here.

[0084] The above descriptions are only optional embodiments of the present invention, and are not intended to limit the patent scope of the present invention. All equivalent structural changes made using the contents of the present invention's specification and drawings, or directly / indirectly applied in other related technical fields, are included in the patent protection scope of the present invention.

Claims

1. An intelligent power module, characterized in that: The intelligent power module comprises: metal substrate; A circuit wiring layer is arranged on one side surface of the metal substrate, and the circuit wiring layer is provided with a plurality of mounting positions; A power module is arranged at a mounting position corresponding to the circuit wiring layer; and Multiple insulating layers, wherein the multiple insulating layers are sandwiched between the metal substrate and the circuit wiring layer; the glass transition temperatures of the multiple insulating layers are different; A conductive layer is sandwiched between the multiple insulating layers.

2. The intelligent power module according to claim 1, characterized in that: The glass transition temperatures of the multiple insulating layers increase gradually in a direction away from the circuit wiring layer.

3. The intelligent power module according to claim 1, characterized in that: The glass transition temperatures of the multiple insulating layers decrease in sequence in a direction away from the circuit wiring layer.

4. The intelligent power module according to claim 1, characterized in that: The insulating layer comprises a plurality of first insulating layers and a plurality of second insulating layers, wherein the plurality of first insulating layers and the plurality of second insulating layers are alternately arranged; wherein the glass transition temperature of the first insulating layer is different from the glass transition temperature of the second insulating layer.

5. The intelligent power module according to claim 4, characterized in that: The first insulating layer is disposed close to the circuit wiring layer; The second insulating layer is disposed close to the metal substrate; Alternatively, the first insulating layer is disposed close to the metal substrate; and the second insulating layer is disposed close to the circuit wiring layer.

6. The intelligent power module according to claim 1, characterized in that: The power module comprises: A driver chip is arranged at a mounting position corresponding to the circuit wiring layer; and The inverter power module is arranged at a mounting position corresponding to the circuit wiring layer, and the inverter power module is electrically connected to the output end of the driving chip.

7. The intelligent power module according to any one of claims 1 to 6, characterized in that: The intelligent power module further comprises a packaging shell, and the packaging shell is covered on the metal substrate to package the power module.

8. The intelligent power module according to claim 7, characterized in that: The intelligent power module further includes a heat sink, which is arranged on a side of the metal substrate away from the power module.

9. A frequency converter, characterized in that: Comprising the intelligent power module as claimed in any one of claims 1 to 8.

10. An air conditioner, characterized in that: It comprises the intelligent power module as claimed in any one of claims 1 to 8; or, it comprises the frequency converter as claimed in claim 9.

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