Intelligent power module, frequency converter and air conditioner

Abstract

The application discloses an intelligent power module, a frequency converter and an air conditioner, and relates to the technical field of intelligent power modules, and discloses the intelligent power module, which comprises a metal substrate, a circuit wiring layer arranged on one side surface of the metal substrate, a plurality of mounting positions provided in the circuit wiring layer, a power module arranged in the mounting position corresponding to the circuit wiring layer, a multilayer insulation layer arranged between the metal substrate and the circuit wiring layer, and a conductive layer arranged between the multilayer insulation layer. The application is beneficial to improving the yield of the intelligent power module, and is beneficial to improving the stability and reliability of the intelligent power module.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of electronic circuit, in particular to a kind of intelligent power module, frequency converter and air conditioner. BACKGROUND

[0002] At present, intelligent power module mostly adopts in metal heat dissipation substrate, and through the way of single surface heat dissipation of insulating layer and metal heat dissipation substrate, the heat generated in the operation process of power module is radiated outward. However, the insulating property of the insulating layer is relatively high, once the insulating layer fails, it will lead to short circuit of intelligent power module, and even easily be high-voltage breakdown. SUMMARY

[0003] The main purpose of the present application is to provide an intelligent power module, frequency converter and air conditioner, to improve the yield of intelligent power module, and improve the stability and reliability of intelligent power module.

[0004] To achieve the above purpose, the present application provides an intelligent power module, which comprises:

[0005] Metal substrate;

[0006] Circuit wiring layer, arranged on one side surface of the metal substrate, the circuit wiring layer is provided with a plurality of mounting positions;

[0007] Power module, arranged in the mounting position corresponding to the circuit wiring layer;

[0008] Multi-layer insulating layer, the insulating layer is arranged between the metal substrate and the circuit wiring layer;And,

[0009] Conductive layer, arranged between the multi-layer insulating layer.

[0010] Optionally, the glass transition temperature of the multi-layer insulating layer increases in turn along the direction away from the circuit wiring layer.

[0011] Optionally, the glass transition temperature of the multi-layer insulating layer decreases in turn along the direction away from the circuit wiring layer.

[0012] Optionally, the insulating layer comprises a plurality of first insulating layers and a plurality of second insulating layers, and the plurality of first insulating layers and the plurality of second insulating layers are arranged alternately;Wherein, the glass transition temperature of the first insulating layer is different from that of the second insulating layer.

[0013] Optionally, the first insulating layer is arranged close to the circuit wiring layer;

[0014] The second insulating layer is arranged close to the metal substrate.

[0015] Optionally, the number of conductive layers is multi-layer.

[0016] Each two layers of the insulating layer is sandwiched by one layer of the conductive layer.

[0017] Optionally, the power module comprises:

[0018] a driving chip arranged at the mounting position corresponding to the circuit wiring layer; and

[0019] an inverter power module arranged at the mounting position corresponding to the circuit wiring layer, and the inverter power module is electrically connected to the output end of the driving chip.

[0020] Optionally, the intelligent power module further comprises a packaging shell, which is arranged on the metal substrate to package the power module.

[0021] The application further provides a frequency converter, which is the intelligent power module as described above.

[0022] The application further provides an air conditioner, which comprises the intelligent power module as described above or the frequency converter as described above.

[0023] The intelligent power module of the application is provided with the insulating layers with different glass transition temperatures between the circuit wiring layer and the metal substrate, so that when the intelligent power module is subjected to thermal stress and / or mechanical force, the insulating layer with a low glass transition temperature can be delaminated under the action of external force and / or high temperature, and the insulating layer with a high glass transition temperature can be ensured not to be affected by external force and / or high temperature and not to be broken, so as to continue to play the insulating role. The conductive layer sandwiched between the insulating layers can divide the voltage applied to the insulating sheet to reduce the electric field of the gap, so as to avoid the partial discharge caused by delamination and improve the voltage resistance and electromagnetic interference resistance of the intelligent power module.

[0024] The application is advantageous in improving the yield of the intelligent power module and improving the stability and reliability of the intelligent power module. BRIEF DESCRIPTION OF DRAWINGS

[0025] In order to more clearly illustrate the technical solutions in the embodiments of the application or the prior art, the following will briefly introduce the drawings needed to be used in the embodiments or the prior art description. Obviously, the drawings in the following description only show some embodiments of the application, and for those skilled in the art, other drawings can also be obtained from the structures shown in the drawings without creative labor.

[0026] Figure 1 FIG. 1 is a structural schematic diagram of an embodiment of the intelligent power module of the application;

[0027] Figure 2 Structure diagram of another embodiment of the intelligent power module of the present application;

[0028] Figure 3 Structure diagram of the circuit of an embodiment of the power module in the intelligent power module of the present application.

[0029] Explanation of reference numerals:

[0030] Reference numeral Name; 10 Metal substrate; 42 Second insulating layer; 20 Circuit wiring layer; 50 Conductive layer; 30 Power module; 60 Encapsulation shell; 40 Insulating layer; 70 Heat sink; 41 First insulating layer; 80 Pin.

[0031] The implementation, functional features and advantages of the present application will be further described with reference to the embodiments in combination with the accompanying drawings. DETAILED DESCRIPTION

[0032] The technical solutions in the embodiments of the present application will be clearly and completely described below in combination with the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all the other embodiments obtained by those skilled in the art without any creative work fall within the protection scope of the present application.

[0033] The present application provides an intelligent power module.

[0034] The intelligent power module is suitable for driving inverters of motors and various inverter power supplies to realize functions of variable frequency speed regulation, metallurgical machinery, electric traction, servo driving and the like. Especially, the intelligent power module is suitable for driving motors of compressors of air conditioners, refrigerators and the like. When applied to variable frequency air conditioners, since algorithms of the variable frequency driving are basically fixed in most cases, in order to save volume, improve anti-interference ability and reduce design workload of peripheral electric control boards, the driving circuit and power devices are integrated on the same substrate to form a high-integration intelligent power module. When the intelligent power module works, the power elements generate relatively serious heat. In order to accelerate heat dissipation, a metal substrate such as an aluminum metal substrate is usually used for heat dissipation. However, since the aluminum metal substrate is a metal substrate, an insulating layer needs to be arranged between the metal substrate and the device layer to avoid short circuit, so that the upper and lower bridge arms of the inverter bridge are simultaneously turned on to cause short circuit, thereby burning the intelligent power module. Therefore, how to arrange the insulating layer is particularly important in the intelligent power module. In an ideal case, the device layer, the insulating layer and the metal substrate should be tightly combined. However, in the module packaging process, the insulating layer is subjected to thermal stress and mechanical force, especially in the module plastic packaging process, the temperature may reach the glass transition temperature of the insulating resin, which is easy to cause delamination between the insulating layer and the metal substrate and the device. Once the three layers are delaminated, water vapor will enter the delamination gap, affecting the reliability, seriously damaging the insulating property between the device layer and the metal substrate, causing the insulating property between the device layer and the metal layer to decrease, and even causing failure. Or, the insulating layer cracks due to stress. Once the crack occurs, the insulating property between the device layer and the metal layer will also decrease, and even failure occurs, causing short circuit between the devices, so that the intelligent power module cannot work normally. In addition, the crack is easy to produce a sharp end voltage, causing the intelligent power module to be not pressure-resistant and unable to be applied to a high-pressure environment.

[0035] Reference Figures 1 to 3 In an embodiment of the present application, the intelligent power module comprises:

[0036] a metal substrate 10;

[0037] a circuit wiring layer 20 arranged on one side surface of the metal substrate 10, the circuit wiring layer 20 being provided with a plurality of mounting positions;

[0038] a power module 30 arranged in the mounting position corresponding to the circuit wiring layer 20;

[0039] a multilayer insulating layer 40 arranged between the metal substrate 10 and the circuit wiring layer 20; and

[0040] a conductive layer 50 arranged between the multilayer insulating layer 40.

[0041] In the embodiment, the power module 30 includes a driving chip and power devices, wherein the power devices can be gallium nitride (GaN) power devices, Si-based power devices or SiC-based power devices, and the gallium nitride (GaN) power devices are preferably adopted in the embodiment. A plurality of power devices, for example, four or six, form a power inverter bridge circuit for driving a fan, a compressor or other load to work. The driving chip is arranged on the mounting position of the circuit wiring layer 20 and is electrically connected with the circuit wiring layer 20 and the power devices through a conductive material such as solder to form a current loop. The power devices are arranged on the corresponding mounting positions of the circuit wiring layer 20, and the heat generated during work is conducted to the insulating layer 40 through the metal wiring layer and is conducted to the metal base plate 10 through the insulating layer 40 to be dissipated through the metal base plate 10. Each power device can be a surface-mounted electronic component or a bare die wafer with pads arranged on a plurality of aluminum base plates, and a plurality of power components can be bonded to the corresponding mounting positions through solder, conductive adhesive or the like.

[0042] In the embodiment, the metal base plate 10 can adopt an aluminum profile material or a copper profile material, and the metal base plate 10 can be implemented by any one of an aluminum base plate, an aluminum alloy base plate, a copper base plate or a copper alloy base plate. Compared with other metal base plates 10, the aluminum base plate has the advantages of light weight and strong heat conduction performance, can be used to manufacture a heat sink panel, has a lighter weight under the same volume, and the light weight aluminum profile can be used to manufacture a light and thin metal base plate 10, which is beneficial to meet the light and thin requirements of products. In addition, the aluminum base plate has strong corrosion resistance, the working environment of the intelligent power module is complex, the aluminum metal base plate 10 can form a dense oxide film on the surface to effectively prevent further corrosion of the inside. In addition, the aluminum base plate can also ensure the EMS performance of the intelligent power module, and can effectively reduce the electromagnetic interference between the intelligent power module and the external environment. The circuit wiring layer 20 forms corresponding lines and mounting positions, i.e. pads, for mounting each electronic component on the metal base plate 10 according to the circuit design of the intelligent power module. Specifically, after the insulating layer 40 is arranged on the metal base plate 10, a copper foil is laid on the insulating layer 40, and the copper foil is etched according to the preset circuit design to form the circuit wiring layer 20. The shape of the metal base plate 10 can be determined according to the specific positions and sizes of the circuit wiring layer 20, the driving chip and other electronic components in the intelligent power module, and can be a square shape, but is not limited to a square shape.

[0043] The metal base plate 10 can be a single-sided wiring board, i.e. the circuit wiring layer 20 is arranged on one side surface of the metal base plate 10, and the plurality of insulating layers 40 are arranged between the circuit wiring layer 20 and the metal base plate 10. After the metal base plate 10, the insulating layer 40 and the circuit wiring layer 20 are formed in one body, the metal base plate 10 serves as a mounting carrier for power switching tubes and driving devices, i.e. as a mounting base plate for the power module 30.

[0044] The insulating layer 40 is used to realize electrical isolation and electromagnetic shielding between the circuit wiring layer 20 and the metal mounting substrate, and to reflect external electromagnetic interference, thereby avoiding external electromagnetic radiation interference with the normal operation of the power switch tube and reducing the interference of electromagnetic radiation in the surrounding environment on the electronic components in the high-integration intelligent power module. The insulating layer 40 can be made of thermoplastic glue or thermosetting glue and the like to realize fixed connection and insulation between the mounting substrate and the circuit wiring layer 20. Specifically, it can be made of epoxy resin, silicon dioxide, aluminum oxide, high-thermal-conductivity filling material and the like. The high-thermal-conductivity filling material can be boron nitride or aluminum nitride. Aluminum nitride and boron nitride have good insulation and high thermal conductivity, and have good heat resistance and thermal conductivity, so that aluminum nitride and boron nitride have high heat transfer capacity. In this way, during the operation of the intelligent power module, the power module 30 outputs driving power according to the received control signal to drive the motor and other loads to work. During this process, the heat generated by the power module 30 during operation is conducted to the metal substrate 10 by the insulating layer 40, and then quickly dissipated by the metal substrate 10 to improve the heat dissipation speed of the power device. Since the insulating layer 40 doped with boron nitride or aluminum nitride has good heat conduction effect, the problem of slow heat dissipation or poor heat dissipation effect during the operation of the intelligent power module is solved, and the intelligent power module is prevented from being burned out.

[0045] In the process of manufacturing the insulating layer 40, the epoxy resin, silicon dioxide, aluminum oxide, boron nitride, aluminum nitride and the like can be mixed, and then the mixed insulating layer 40 material is heated. After cooling, the insulating layer 40 material is crushed, and then rolled into shape by the ingot granulation process to form the insulating layer 40.

[0046] In the process of manufacturing the power module 30 mounting substrate, after the insulating layer 40 is arranged on the metal substrate 10, the copper foil is laid on the insulating layer 40, and the copper foil is etched according to the predetermined circuit design, thereby forming the circuit wiring layer 20. Alternatively, copper or copper alloy can be directly calendered to form circuit lines and mounting positions, and then the lines and mounting positions are pressed on the insulating layer 40 by a device through a hot pressing process. Alternatively, the insulating layer 40 formed with the circuit wiring layer 20 can be integrated with the metal substrate 10 by a hot pressing process or using heat-conducting adhesive to realize the manufacturing of the mounting substrate.

[0047] It can be understood that, with different materials of the insulating layer 40 and different proportions of various materials, the glass transition temperature of the insulating layer 40 (the temperature at which the insulating layer 40 changes from a glass state to a high-elastic state is referred to as the glass transition temperature) is different. The insulating layer 40 with a low glass transition temperature is prone to change in shape as the temperature rises, that is, it is prone to softening. The softened insulating layer 40 can withstand a larger stress without being prone to cracking and generating a gap. The insulating layer 40 with a high glass transition temperature is less prone to softening as the temperature rises, and thus is prone to deformation. Therefore, the adhesion between the insulating layer 40 and the metal substrate 10 and between the insulating layer 40 and the circuit wiring layer 20 can be increased, the circuit wiring layer 20 and the metal substrate 10 can be well fastened, delamination is less likely to occur, and the bonding force between the circuit wiring layer 20 and the metal substrate 10 can be improved. In the embodiment, the material of the insulating layer 40 and the proportions of various materials are adjusted to form insulating layers 40 with different glass transition temperatures. Thus, multiple insulating layers 40 with different glass transition temperatures are arranged between the circuit wiring layer 20 and the metal substrate 10, and the insulating layers 40 cooperate with each other to ensure that at least one of the insulating layers 40 can stably play an insulating role. Even if delamination occurs between one of the insulating layers 40 and the metal substrate 10 (or the circuit wiring layer 20 or the insulating layer 40 in contact therewith), the reliability is not affected. The number of layers of the insulating layer 40 can be two or more. The more the number of layers of the insulating layer 40, the better the insulation, and the more the number of layers of the insulating layer 40, the lower the heat dissipation performance. In order to balance the insulation and heat dissipation efficiency of the intelligent power module, the number of layers of the insulating layer 40 can be set according to actual application requirements, which is not limited herein.

[0048] The conductive layer 50 is arranged between the insulating layer 40 and the circuit wiring layer 20. Even if a gap occurs in the insulating layer 40, that is, the insulating layer 40 is locally delaminated to generate a gap, when the voltage applied to the air layer of the gap is higher than the dielectric breakdown voltage of air, partial discharge occurs. The electric field of the gap is reduced by dividing the voltage applied to the insulating sheet by the conductive foil. The potential of the conductive foil is fixed as the intermediate potential by dividing the potential difference between the conductive foil, the circuit layer and the aluminum layer to the upper and lower insulating sheets. The partial discharge characteristics of the insulating layer 40 are improved, the partial discharge caused by delamination is avoided, and the voltage resistance of the intelligent power module can be improved. The conductive layer 50 can be implemented by using a metal material such as an aluminum film or a copper film. When the conductive layer 50 is implemented by using a metal material, the metal conductive material can also consume the energy generated by dielectric breakdown in the form of heat. At the same time, the heat dissipation efficiency of the power device on the circuit wiring layer 20 can be accelerated.

[0049] The circuit wiring layer 20 and the conductive layer 50 made of metal are communicated through the gap, which is also beneficial to increase the area of electromagnetic shielding, and the conductive layer 50 can also be used as a shielding plate to shield the electromagnetic radiation generated by the circuit elements in the intelligent power module, thereby preventing the radiation and interference of electromagnetic waves. Moreover, the grounding area of the circuit wiring layer 20 communicated with the conductive layer 50 can also increase the common ground area of the circuit wiring layer 20, which is beneficial to the circuit wiring layer 20 to set a large-area shielding ground wire, effectively suppressing the electromagnetic interference transmitted through space. Specifically, the circuit wiring layer 20 is communicated with the conductive layer 50 through the insulating layer 40, so that the circuit elements on the circuit wiring layer 20 have the same potential, and the switching devices in the internal circuit do not interfere with each other, which is beneficial to reduce the generation of internal electromagnetic interference. The setting of the metal heat dissipation substrate can effectively absorb and shield external electromagnetic waves, thereby cutting off the propagation path of electromagnetic waves. The metal heat dissipation substrate can limit the radiation of the internal electromagnetic energy of the intelligent power module to the outside of the module, and also prevent external radiation from entering the intelligent power module.

[0050] The intelligent power module of the present application sets the insulating layers 40 with different glass transition temperatures between the circuit wiring layer 20 and the metal substrate 10, so that when the intelligent power module is subjected to thermal stress and / or mechanical force, the insulating layer 40 with a low glass transition temperature can be delaminated under the action of external force and / or high temperature. Under the action of the insulating layer 40 with a low glass transition temperature, the insulating layer 40 with a high glass transition temperature can be ensured not to be affected by external force and / or high temperature, and will not be broken, and can continue to play an insulating role. The present application also divides the voltage applied to the insulating sheet by the conductive layer 50 interposed between the insulating layers 40 to reduce the electric field of the gap, thereby avoiding local discharge caused by delamination, and improving the voltage resistance and electromagnetic interference resistance of the intelligent power module. The present application is beneficial to improve the yield of the intelligent power module, and is also beneficial to improve the stability and reliability of the intelligent power module.

[0051] Reference Figures 1 to 3 In an embodiment, the glass transition temperatures of the multiple layers of the insulating layer 40 are sequentially increased in the direction away from the circuit wiring layer 20.

[0052] Alternatively, the glass transition temperatures of the multiple layers of the insulating layer 40 are sequentially decreased in the direction away from the circuit wiring layer 20.

[0053] In this embodiment, the glass transition temperatures of the multiple insulation layers 40 are not the same, and are arranged in an increasing or decreasing order from the circuit wiring layer 20 to the metal substrate 10, so that at least one insulation layer 40 can be tightly combined with the circuit wiring layer 20, or at least one insulation layer 40 can be tightly combined with the metal substrate 10, so that even if the insulation layers 40 are delaminated due to thermal stress and / or mechanical force, the delaminated insulation layers 40 can withstand greater stress without causing the insulation layers 40 that are tightly combined with the metal substrate 10 or the insulation layers 40 that are tightly combined with the circuit wiring layer 20 to break, so that the insulation effect can be maintained, and insulation between the circuit wiring layer 20 and the metal substrate 10 can still be achieved.

[0054] It should be noted that when the power module 30 and the mounting substrate are encapsulated, the circuit elements and pins need to be welded on the circuit wiring layer 20, i.e., the circuit elements and pins are welded on the circuit wiring layer 20, and the metal substrate 10, the insulation layers 40, the circuit wiring layer 20, the circuit elements and the pins need to be encapsulated by an encapsulation material such as sealing resin. During the installation of the circuit elements and the pins and the plastic encapsulation, a high-temperature environment is needed, and the mounting substrate needs to be fixed and subjected to a certain mechanical force.

[0055] In the embodiment in which the glass transition temperatures of the multiple insulation layers 40 increase in the direction away from the circuit wiring layer 20, under high temperature, the insulation layer 41 arranged close to the circuit wiring layer 20 softens first, and the pins, devices, etc. during plastic encapsulation generate stress on the insulation layer 41 below the circuit wiring layer 20, and the insulation layer 41 bears this part of stress. At this time, due to the high temperature, the insulation layer 41 can cause delamination at the upper and lower interfaces. However, the glass transition temperature of the insulation layer 42 close to the mounting substrate is higher, and the insulation layer 41 acts as a buffer layer, and the main stress has been buffered and absorbed by the insulation layer 41 above, so the insulation layer 42 can remain intact and continue to play an insulation effect.

[0056] In the embodiment where the glass transition temperatures of the multiple layers of the insulating layer 40 decrease in turn in the direction away from the circuit wiring layer 20, in the case of high temperature, the insulating layer 41 close to the metal substrate 10 softens first, and the pins, devices and the like will generate stress on the insulating layer 41 above the metal substrate 10 during the plastic packaging, and the insulating layer 41 bears the stress. At this time, due to the effect of high temperature, the insulating layer 41 can cause delamination at the upper and lower interfaces. However, the glass transition temperature of the insulating layer 42 close to the circuit wiring layer 20 is higher, and the pins, devices and the like will play a buffering effect on the insulating layer 41 close to the metal substrate 10 through the multiple layers of the insulating layer 40, and the main stress has been buffered and absorbed by the insulating layer 41 below, that is, the insulating layer 40 with high glass transition temperature will not contact the harder metal substrate 10 to cause fission due to external stress, so the insulating layer 42 can remain intact and continue to play the effect of insulation.

[0057] With reference to Figures 1 to 3 In an embodiment, the insulating layer 40 comprises multiple layers of a first insulating layer 41 and multiple layers of a second insulating layer 42, and the multiple layers of the first insulating layer 41 and the multiple layers of the second insulating layer 42 are arranged alternately; wherein the glass transition temperature of the first insulating layer 41 is different from the glass transition temperature of the second insulating layer 42.

[0058] In an embodiment, the insulating layer 40 comprises multiple layers of a first insulating layer 41 and multiple layers of a second insulating layer 42, and the multiple layers of the first insulating layer 41 and the multiple layers of the second insulating layer 42 are arranged alternately; wherein the glass transition temperature of the first insulating layer 41 is different from the glass transition temperature of the second insulating layer 42. Wherein the first insulating layer 41 is arranged close to the circuit wiring layer 20; the second insulating layer 42 is arranged close to the metal substrate 10, or the first insulating layer 41 is arranged close to the metal substrate 10; and the second insulating layer 42 is arranged close to the circuit wiring layer 20.

[0059] In this embodiment, the insulation layers 40 are arranged in groups, each group having two insulation layers 40 with different glass transition temperatures. The insulation layers 40 in each group are stacked, and the glass transition temperature of the first insulation layer 41 is lower than that of the second insulation layer 42. In a high-temperature condition, the first insulation layer 41 with a lower glass transition temperature softens before the second insulation layer 42 with a higher glass transition temperature. At this time, if an external force (for example, a stress on the lower insulation layer 40 caused by a pin during plastic packaging) is applied, the first insulation layer 41 with a lower glass transition temperature bears the stress, and the first insulation layer 41 acts as a buffer layer. However, due to the change in the shape of the first insulation layer 41, delamination may occur at the upper and lower interfaces. At this time, since the glass transition temperature of the second insulation layer 42 is higher, the shape of the second insulation layer 42 does not change with the increase in temperature. In addition, the external force is mainly buffered by the first insulation layer 41, so the second insulation layer 42 remains intact and does not crack due to the external force. Thus, the second insulation layer 42 can continue to play an insulating effect.

[0060] Of course, in other embodiments, the second insulation layer 42, i.e., the insulation layer 40 with a higher glass transition temperature, can be arranged in close contact with the metal substrate 10 and the circuit wiring layer 20, and the first insulation layer 41 with a lower glass transition temperature can be arranged in the middle. When an external stress is applied, the first insulation layer 41 deforms and acts as a buffer to ensure that the second insulation layer 42 does not crack. Thus, the two second insulation layers 42 can be tightly combined with the metal substrate 10 and the circuit wiring layer 20 without breaking, so that they can maintain an insulating effect and still insulate the circuit wiring layer 20 from the metal substrate 10.

[0061] Referring to Figures 1 to 3 In an embodiment, the number of the conductive layers 50 is multiple.

[0062] Each two insulation layers 40 are arranged with a conductive layer 50 in between.

[0063] In this embodiment, the insulating layers 40 and the conductive layers 50 are arranged alternately to form a composite structure of insulating layer 40-conductive layer 50-insulating layer 40-conductive layer 50-insulating layer 40-…-insulating layer 40, wherein the number of layers of the insulating layers 40 and the conductive layers 50 can be the same or different, for example, both are three layers, or the number of layers of the insulating layers 40 is more than that of the conductive layers 50, so that the connection contact between the metal substrate 10 and the circuit wiring layer 20 is the insulating layer 40. It can be understood that the more the number of layers of the insulating layers 40 and the conductive layers 50, the greater the thickness of the mounting substrate, and the better the effect of gap discharge absorption on the circuit wiring layer 20. The less the number of layers of the insulating layers 40 and the conductive layers 50, the smaller the thickness of the mounting substrate, and the smaller the size of the intelligent power module. The number of layers of the insulating layers 40 and the conductive layers 50 is set according to the actual effect, which is not limited here. The number of layers of the insulating layers 40 and the conductive layers 50 is set according to the actual effect, which is not limited here. The material of the conductive layer 50 can be a conductive material such as metal nickel, aluminum, copper, and ferromagnetic material, and is arranged on the insulating layer 40 by electroplating or physical deposition method.

[0064] With reference to Figure 3 In an embodiment, the power module 30 comprises:

[0065] a drive chip IC1 arranged at the mounting position corresponding to the circuit wiring layer 20; and

[0066] an inverter power module 31 arranged at the mounting position corresponding to the circuit wiring layer 20, wherein the output end of the inverter power module 31 is electrically connected to the drive chip IC1.

[0067] In this embodiment, the number of driving chips IC1 can be one, for example, the driving chip IC1 is an integrated chip, in which four-way, six-way driving circuits are integrated, and the number of driving chips IC1 can be set according to the number of driving power switches. The number of driving chips IC1 can also correspond to the number of power switches, that is, each driving chip IC1 corresponds to a power switch. The driving chip IC1 is used to output corresponding control signals when the intelligent power module is working, to control the conduction of the corresponding power switch, so as to output driving power to drive the load such as motor to work. When the driving power switch is turned on, the power switch is provided with a charging current, so that the voltage between the gate and the source of the power switch rises rapidly to the required value, ensuring that the power switch can be quickly turned on. And during the conduction of the power switch, the voltage between the gate and the source of the power switch is maintained stable, so that the power switch can be reliably turned on. The driving chip IC1 can also be provided with two driving chips IC1, one for driving the upper arm power device and the other for driving the lower arm power device in the inverter power module 31. The inverter power module 31 and the driving chip IC1 can be electrically connected through circuit wiring and metal lead 21 to form a current loop. When one driving chip IC1 is used, the driving chip IC1 is integrated with a high-voltage side driving unit and a low-voltage side driving circuit, and the high-voltage side driving unit and the low-voltage side driving unit are used to drive the upper arm power device and the lower arm power device in the inverter power module 31, respectively. The input end of the driving chip IC1 is connected with the main controller in the frequency converter or air conditioner, that is, the MCU, which is integrated with a logic controller, a memory, a data processor, and a software program and / or module stored in the memory and executable on the data processor. The MCU outputs corresponding control signals to the driving chip IC1 by running or executing the software program and / or module stored in the memory and calling the data stored in the memory, to drive the power switch in the inverter power module 31 to turn on / off according to the control signal of the main controller, so as to drive the load such as fan, compressor, motor to work. The main controller can be independent of the intelligent power module, or can be integrated in the intelligent power module. In actual application, the main controller and the intelligent power module are arranged on the electronic control board and are electrically connected through circuit wiring or wire. Of course, in other embodiments, the main controller can be integrated in the intelligent power module to improve the integration of the intelligent power module.

[0068] The inverter power module 31 is provided with a plurality of power switch tubes, which can be gallium nitride (GaN) power switch tubes, Si-based power switch tubes or SiC-based power switch tubes. In actual application, the number of power switch tubes can be four or a multiple of four, or six or a multiple of six. Six power switch tubes (T1-T6) form an inverter circuit to drive the compressor to work.

[0069] With reference to Figure 1 And Figure 2 In an embodiment, the smart power module further comprises a packaging shell 60, which covers the metal substrate 10 to package the power module 30.

[0070] In the embodiment, the packaging shell 60 can be made of epoxy resin, aluminum oxide, thermally conductive filling material, etc. The thermally conductive filling material can be boron nitride or aluminum nitride. The insulation of aluminum nitride and boron nitride is good, and the thermal conductivity is high, and the heat resistance and thermal conductivity are better, so that the heat transfer capacity of aluminum nitride and boron nitride is high. When making the packaging shell 60, the materials such as epoxy resin, aluminum oxide, boron nitride or aluminum nitride can be mixed, and then the mixed packaging material is heated. After cooling, the packaging material is crushed, and then the packaging shell 60 material is rolled into shape by ingot granulation process to form the packaging shell 60, and the circuit wiring layer 20, the metal substrate 10, the drive chip IC1 and the power switch tube are packaged in the packaging shell 60. Or through the process of multiple injection molding, the temperature sensor is fixed on the packaging shell 60, and then the circuit wiring layer 20, the metal substrate 10, the drive chip IC1 and the power switch tube are packaged in the packaging shell 60.

[0071] In order to improve the heat dissipation efficiency of the smart power module, when a semi-encapsulated package is used, part of the metal substrate 10 of the smart power module can be exposed outside the packaging shell 60, that is, the packaging shell 60 covers the metal substrate 10 and the power module 30. The lower surface of the metal substrate 10 is exposed outside the packaging, and the heat dissipation of the power element is accelerated. If the smart power module is also provided with a heat sink 70 to dissipate heat for the power switch tube, the surface of the metal substrate 10 exposed outside the packaging shell 60 of the smart power module can better adhere to the heat sink 70, thereby further improving the heat dissipation efficiency of the smart power module. Of course, in other embodiments, the metal substrate 10 can also be molded into the packaging shell 60 to form a full-encapsulated package structure.

[0072] With reference to Figure 1 And Figure 2 In an embodiment, the smart power module further comprises a heat sink 70, which is arranged on the side of the metal substrate 10 away from the power module 30.

[0073] In the embodiment, the heat sink 70 can be made of aluminum, aluminum alloy or other high-thermal-conductivity material with good heat dissipation effect, so that the heat generated by the electronic components in the power switch tube is conducted to the heat sink 70 through the insulating layer 40 and the metal substrate 10, further increasing the contact area of the heat generated by the power switch tube and the air, and improving the heat dissipation rate. The heat sink 70 can also be provided with a heat sink body and a plurality of heat dissipation fins, and the plurality of heat dissipation fins are arranged at one side of the heat sink body. In this way, the contact area of the heat sink 70 and the air can be increased, that is, the contact area of the heat on the heat sink 70 and the air is increased when the heat sink 70 is working, so as to speed up the heat dissipation rate of the heat sink 70. At the same time, the material of the heat sink 70 can also be reduced, avoiding the cost being too high due to too much material of the heat dissipation fins.

[0074] Referring to Figure 1 and Figure 2 In an embodiment, the smart power module further includes pins 80 arranged on the circuit wiring layer 20 and electrically connected to the power module 30 through metal wires.

[0075] In the embodiment, the pins 80 can be implemented in a gull-wing type or a straight-in type. The straight-in type is preferred in the embodiment. The pins 80 are welded on the pads at the corresponding mounting positions of the circuit wiring layer 20, and are electrically connected to the power switch tube and the driving chip IC 130 through metal wires.

[0076] In another embodiment, one end of each pin 80 is fixed to the metal substrate 10, and the other end of the pin 80 extends away from the metal substrate 10, and the extension direction of the pin 80 is parallel to the plane where the metal substrate 10 is located.

[0077] Compared with the gull-wing type pin 80, the pin 80 in the embodiment is arranged parallel to the metal substrate 10, that is, the pin 80 is in a flat structure. In this way, the smart power module can be embedded in the electric control board of the air conditioner, and can be attached to the electric control board. The pins 80 of the smart power module are fixed to the electric control board by soldering and conductive glue, and the extension section of the pin 80 is attached to the electric control board, so as to prevent the pin 80 from being broken when the electric control board falls. Part of the metal substrate 10 is embedded in the electric control board, so that the smart power module is installed on the electric control board, and the fastening of the smart power module and the electric control board is better, thereby preventing the smart power module and the electric control board from moving relative to each other in the process of carrying or falling, so that the electric control board cannot work normally, or the smart power module is broken and damaged.

[0078] Referring to Figures 1 to 3In an embodiment, the power switch tube is an IGBT;

[0079] The intelligent power module further comprises fast recovery diodes, the number and position of which correspond to the IGBTs;

[0080] The fast recovery diodes and the IGBTs are connected in anti-parallel.

[0081] In the embodiment, the number and position of the fast recovery diodes correspond to each power switch tube. In the embodiment, the number of the fast recovery diodes can be six, and the six fast recovery diodes are marked as D1, D2, D3, D4, D5 and D6. In the embodiment, the fast recovery diodes are high-power anti-parallel diodes, which are used to realize the fast turn-off of the power switch tube. When the power switch tube is set as SiC MOSFET or SiC IGBT, or GaN HEMT device, the switching loss of the intelligent power module is reduced to be low, and then the fast recovery diode can be made of a fast recovery diode or a Schottky diode made of Si material to realize the fast recovery diode, which can ensure that the power consumption of the intelligent power module is low while reducing the production cost of the intelligent power module.

[0082] Reference Figures 1 to 3 In some embodiments, the power element can also be realized by using an inverse-IGBT. The inverse-IGBT integrates the fast recovery diode FRD which is packaged together with the IGBT power switch tube in an anti-parallel manner on the same chip, thereby reducing the size of the inverter bridge circuit. In this way, the power density is improved, the size, manufacturing cost and packaging process of the high-integration intelligent power module are reduced, and the reliability of the intelligent power module is also improved.

[0083] The application further provides a frequency converter comprising the intelligent power module.

[0084] The detailed structure of the intelligent power module can refer to the above embodiments, which will not be described here again. It can be understood that, since the above intelligent power module is used in the frequency converter of the application, the embodiments of the frequency converter of the application include all the technical solutions of all the embodiments of the above intelligent power module, and the same technical effects are also achieved, which will not be described here again.

[0085] The frequency converter of the application can be applied to air conditioners, such as central air conditioners, wall-mounted air conditioners, cabinet air conditioners, mobile air conditioners, window air conditioners and the like, and can also be applied to refrigeration equipment such as refrigerators and refrigerators.

[0086] The application provides an air conditioner comprising the intelligent power module or the frequency converter.

[0087] The detailed structure of the intelligent power module and the frequency converter can refer to the above-mentioned embodiments, and will not be described here again. It can be understood that, since the above-mentioned intelligent power module and the frequency converter are used in the air conditioner of the present application, the embodiments of the air conditioner of the present application include all the technical solutions of all the embodiments of the above-mentioned intelligent power module and the frequency converter, and the technical effects achieved are also completely the same, and will not be described here again.

[0088] The above-mentioned is only the optional embodiment of the present application, and does not limit the patent scope of the present application, and any equivalent structural transformation made by using the content of the present application specification and drawings, or directly / indirectly applied in other related technical fields under the inventive concept of the present application is included in the patent protection scope of the present application.

Claims

1. A smart power module, characterized in that, The intelligent power module includes: metal substrate; A circuit wiring layer is disposed on one side surface of the metal substrate, and the circuit wiring layer is provided with multiple mounting positions; The power module is disposed at the mounting position corresponding to the circuit wiring layer; A multilayer insulating layer, the insulating layer being sandwiched between the metal substrate and the circuit wiring layer; and, A conductive layer is sandwiched between the multiple insulating layers; The insulating layer undergoes local delamination, creating gaps, through which the circuit wiring layer and the conductive layer made of metal are connected. The insulating layer comprises multiple first insulating layers and multiple second insulating layers, with the multiple first insulating layers and multiple second insulating layers alternately arranged; wherein the glass transition temperature of the first insulating layer is different from that of the second insulating layer. The conductive layer is multi-layered; a conductive layer is sandwiched between every two insulating layers.

2. The intelligent power module as described in claim 1, characterized in that, The glass transition temperature of the multiple insulating layers increases sequentially in the direction away from the circuit wiring layers.

3. The intelligent power module as described in claim 1, characterized in that, The glass transition temperature of the multiple insulating layers decreases sequentially in the direction away from the circuit wiring layers.

4. The intelligent power module as described in claim 1, characterized in that, The first insulating layer is disposed close to the circuit wiring layer; The second insulating layer is disposed close to the metal substrate.

5. The intelligent power module as described in any one of claims 1 to 4, characterized in that, The power module includes: The driver chip is disposed at the mounting position corresponding to the circuit wiring layer; and, An inverter power module is disposed at the mounting position corresponding to the circuit wiring layer, and the inverter power module is electrically connected to the output terminal of the driver chip.

6. The intelligent power module as described in any one of claims 1 to 4, characterized in that, The intelligent power module also includes a packaging shell, which is placed on the metal substrate to encapsulate the power module.

7. A frequency converter, characterized in that, Includes the intelligent power module as described in any one of claims 1 to 6.

8. An air conditioner, characterized in that, It includes the intelligent power module as described in any one of claims 1 to 6; or, it includes the frequency converter as described in claim 7.

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