Apt sample stage and apt sample preparation method
CN114720725BActive Publication Date: 2026-07-24CHANGXIN MEMORY TECH INC
View PDF 1 Cites 0 Cited by
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- CHANGXIN MEMORY TECH INC
- Filing Date
- 2022-04-08
- Publication Date
- 2026-07-24
AI Technical Summary
Technical Problem
Traditional APT sample stages have poor conductivity, making it difficult for atoms at the sample tip to evaporate and easy to break.
Method used
The APT sample stage design employs a metal support and a silicon substrate stage. By depositing a metal thin film and a metal support on the sample stage, the conductivity and thermal conductivity are improved, and the sample is connected by depositing metal materials using a focused ion beam.
Benefits of technology
It improves the evaporation efficiency of atoms at the sample tip, reduces the probability of sample and sample stage breakage, saves sample material, and shortens sampling time.
✦ Generated by Eureka AI based on patent content.
Smart Images
Figure CN114720725B_ABST
Abstract
The present disclosure relates to an APT sample stage for testing semiconductor devices and an APT sample preparation method, and relates to the technical field of semiconductor testing. The APT sample stage for testing semiconductor devices comprises a sample support for carrying a sample, and a sample stage for carrying the sample support, wherein the sample support is a metal support, and the sample stage is a silicon substrate stage. The present disclosure improves the electrical conductivity of the sample stage.
Need to check novelty before this filing date? Find Prior Art