Wafer calibration apparatus and chamber, semiconductor process apparatus and calibration method

Abstract

The application discloses a wafer calibration device, a wafer calibration chamber, a semiconductor process equipment and a calibration method. The wafer calibration device comprises a bearing mechanism and a guiding and centering mechanism. The bearing mechanism has a first bearing surface for bearing a wafer. The guiding and centering mechanism comprises a lifting assembly and a guiding bearing part. The lifting assembly is connected with the guiding bearing part and is used for driving the guiding bearing part to lift so as to make the guiding bearing part be located at a first position or a second position. The guiding bearing part is arranged around the bearing mechanism. The guiding bearing part has a guiding inclined surface and a second bearing surface parallel to the first bearing surface. The guiding inclined surface is used for guiding the wafer to the second bearing surface and realizing centering in the process. When the guiding bearing part is at the first position, the second bearing surface is higher than the first bearing surface. When the guiding bearing part is at the second position, the second bearing surface is lower than the first bearing surface. The application preliminarily calibrates the position of the wafer and improves the compatibility and safety of the wafer calibration device.

Description

Technical Field

[0001] This invention relates to the field of semiconductor technology, and in particular to a wafer calibration device, a wafer calibration chamber, semiconductor process equipment, and a calibration method. Background Technology

[0002] Semiconductor process equipment includes process chambers and wafer carrier chambers. During operation, a robotic arm transfers wafers stored in the wafer carrier chambers to the process chambers, where they undergo processing.

[0003] However, due to deviations in the robot's station calibration and the wafer's position within the wafer carrier chamber, the wafer's positional accuracy within the process chamber is poor when it is transferred from the wafer carrier chamber to the process chamber, thus affecting the wafer's process performance.

[0004] Therefore, in related technologies, semiconductor process equipment also includes a wafer calibration device. This device comprises a support mechanism and a detection mechanism. The support mechanism holds the wafer, and the detection mechanism detects the wafer's external shape and structure, thereby calibrating the wafer's relative position. The robotic arm adjusts its gripping position based on the detection signal from the detection mechanism, compensating for any positional deviations in the wafer and calibrating its position so that it can be accurately positioned before being transferred into the process cavity.

[0005] However, when the center of the carrier mechanism deviates significantly from the center of the wafer, it can easily exceed the calibration range of the wafer calibration device, rendering it unable to perform calibration operations. Therefore, the calibration range of wafer calibration devices in related technologies is relatively small. Furthermore, a large deviation between the center of the carrier mechanism and the center of the wafer can also easily cause the wafer to fall off the carrier mechanism, resulting in wafer damage. Therefore, the compatibility and safety of wafer calibration devices are both poor. Summary of the Invention

[0006] This invention discloses a wafer calibration device, a wafer calibration chamber, semiconductor process equipment, and a calibration method to solve the problems of poor compatibility and safety of wafer calibration devices.

[0007] To solve the above problems, the present invention adopts the following technical solution:

[0008] A wafer calibration device includes a support mechanism and a guiding alignment mechanism;

[0009] The support mechanism has a first support surface, which is used to support the wafer;

[0010] The guiding centering mechanism includes a lifting assembly and a guiding support part. The lifting assembly is connected to the guiding support part and is used to drive the guiding support part to rise and fall so that the guiding support part is in a first position or a second position. The guiding support part is arranged around the support mechanism.

[0011] The guide bearing portion has a guide ramp and a second bearing surface parallel to the first bearing surface. The guide ramp is used to guide the wafer into the second bearing surface and achieve centering in the process.

[0012] When the guide bearing part is in the first position, the second bearing surface is higher than the first bearing surface; when the guide bearing part is in the second position, the second bearing surface is lower than the first bearing surface.

[0013] A wafer calibration chamber includes the wafer calibration device described above. The wafer calibration chamber also includes a chamber body. The guide support and the support mechanism are both disposed within the chamber body, and the lifting assembly is disposed below the chamber body.

[0014] A semiconductor process apparatus includes a wafer carrier chamber, a process chamber, a transfer chamber, and the aforementioned wafer calibration chamber. A robotic arm is disposed in the transfer chamber, and the robotic arm is used to transfer the wafer in the wafer carrier chamber to the wafer calibration chamber for calibration, and then transfer the calibrated wafer into the process chamber.

[0015] A wafer calibration method, applied to the aforementioned semiconductor process equipment, the calibration method comprising:

[0016] Drive the robotic arm carrying the wafer to move to the wafer transfer position;

[0017] The robotic arm is driven to descend, so that the wafer is transferred to the guide ramp of the guide bearing portion located at the first position;

[0018] The guide bearing is driven to move downward from the first position, and the wafer is guided into the second bearing surface through the guide ramp and centered in the process;

[0019] The guide carrier is driven to continue moving downward so that the wafer is transferred from the second carrier surface to the first carrier surface.

[0020] The technical solution adopted in this invention can achieve the following beneficial effects:

[0021] In the wafer calibration apparatus disclosed in this invention, a robotic arm first transfers the wafer to a guide carrier. The guide carrier has a guide ramp, which, under the weight of the wafer, centers the wafer, thus performing preliminary calibration of its position. When the guide carrier moves from a first position to a second position, the wafer is transferred to a carrier mechanism. In this design, when the wafer has a large deviation, the guide ramp can center the wafer to perform preliminary calibration, allowing the wafer to be carried on the carrier mechanism with a smaller deviation. The wafer calibration apparatus of this application can accommodate a wide range of deviations. Furthermore, the wafer is carried on the carrier mechanism with a smaller deviation, making it less likely to fall off. Therefore, this solution improves the compatibility and safety of the wafer calibration apparatus. Attached Figure Description

[0022] The accompanying drawings, which are included to provide a further understanding of the invention and form part of this invention, illustrate exemplary embodiments of the invention and are used to explain the invention, but do not constitute an undue limitation of the invention. In the drawings:

[0023] Figure 1 This is a schematic diagram of the structure of the wafer calibration device disclosed in an embodiment of the present invention;

[0024] Figure 2 This is a top view of the wafer calibration apparatus disclosed in an embodiment of the present invention;

[0025] Figures 3 to 5 This is a schematic diagram of wafer transfer in the wafer calibration device disclosed in an embodiment of the present invention;

[0026] Figures 6 to 14 This is a partial structural schematic diagram of the wafer calibration device disclosed in an embodiment of the present invention;

[0027] Figure 15 This is a schematic diagram of the structure of the semiconductor process equipment disclosed in an embodiment of the present invention;

[0028] Figure 16 and Figure 17 This is a flowchart of the calibration method disclosed in an embodiment of the present invention.

[0029] Explanation of reference numerals in the attached figures:

[0030] 100-Wafer calibration cavity, 101-Cavity body, 110-Mounting base, 120-Rotation mechanism, 130-Bearing mechanism, 131-Base body, 132-Ejector pin, 140-Detection mechanism, 141-Emitter, 142-Receiver, 150-Guiding alignment mechanism, 151-Lifting assembly, 1511-Drive source, 1512-Lifting platform, 1513-Support rod, 1514-Mounting plate, 1515-Screw drive 1516-Coupling, 1517a-First detection switch, 1517b-Second detection switch, 1518a-First limit switch, 1518b-Second limit switch, 1519-Switch trigger, 152-Guide bearing part, 1521-Guide inclined surface, 1522-Second bearing surface, 200-Wafer bearing chamber, 300-Process chamber, 400-Transfer chamber, 410-Robot arm, 500-Wafer. Detailed Implementation

[0031] To make the objectives, technical solutions, and advantages of this invention clearer, the technical solutions of this invention will be clearly and completely described below in conjunction with specific embodiments and corresponding drawings. Obviously, the described embodiments are only a part of the embodiments of this invention, and not all of them. Based on the embodiments of this invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this invention.

[0032] The technical solutions disclosed in the various embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0033] like Figures 1 to 14 As shown, this embodiment of the invention discloses a wafer calibration device for calibrating the relative position of a wafer 500. The disclosed wafer calibration device includes a mounting base 110, a support mechanism 130, a detection mechanism 140, and a guiding alignment mechanism 150.

[0034] Mounting base 110 provides mounting positions for components such as bearing mechanism 130, detection mechanism 140, and guiding centering mechanism 150.

[0035] The support mechanism 130 has a first support surface for supporting the wafer 500. Optionally, the support mechanism 130 can be a frustum-shaped or columnar structure. Of course, the support mechanism 130 can also be other structures, which are not limited herein.

[0036] The inspection mechanism 140 is disposed on the mounting base 110 and is used to inspect the position and contour shape of the wafer 500. At this time, the inspection mechanism 140 obtains the position and contour information of the wafer 500, and transmits the position and contour information of the wafer 500 to the control device of the semiconductor process equipment. The control device obtains the compensation information of the robot arm 410 based on the information transmitted by the inspection mechanism 140, thereby driving the robot arm 410 to correct the gripping position to compensate for the position deviation of the wafer 500.

[0037] The guiding centering mechanism 150 includes a lifting assembly 151 and a guiding support portion 152. The guiding support portion 152 is connected to the lifting assembly 151. The lifting assembly 151 is used to drive the guiding support portion 152 to rise and fall, so that the guiding support portion 152 is located in a first position or a second position. The guiding support portion 152 is arranged around the support mechanism 130.

[0038] The guide bearing portion 152 has a guide slope 1521 and a second bearing surface 1522 parallel to the first bearing surface. The guide slope 1521 is used to guide the wafer 500 into the second bearing surface 1522 and achieve centering in the process.

[0039] When the wafer 500 is placed into the guide support portion 152, the guide ramp 1521 centers the wafer 500 while guiding it into the second support surface 1522. If there is a positional deviation of the wafer 500 on the robot arm 410, the wafer 500 will tilt itself when it first falls into the guide support portion 152 due to the deviation, and the edge of the wafer 500 will overlap the guide ramp 1521. The guide ramp 1521 will provide a support force perpendicular to the guide ramp 1521 for the wafer 500. The support force perpendicular to the guide ramp 1521 is decomposed into an upward vertical component and a component pointing towards the center of the guide support portion 152. The component pointing towards the guide support portion 152 can make the wafer 500 slide towards the center of the guide support portion 152, thereby eliminating part of the positional deviation of the wafer 500.

[0040] like Figure 10 As shown, F1 is the gravity of wafer 500, F2 is the support force provided by guide slope 1521 to wafer 500 perpendicular to guide slope 1521, F3 is the vertically upward component force, and F4 is the component force pointing towards the center of guide bearing part 152.

[0041] When the guide bearing part 152 is in the first position, the second bearing surface 1522 is higher than the first bearing surface; when the guide bearing part 152 is in the second position, the second bearing surface 1522 is lower than the first bearing surface.

[0042] In the specific operation, the guide carrier 152 first moves to the first position, at which point the second carrier surface 1522 is higher than the first carrier surface. The robot arm 410 then transfers the wafer 500 to the guide carrier 152. After the wafer 500 is initially calibrated on the guide carrier 152, it is transferred to the carrier mechanism 130. During this process, the second carrier surface 1522 moves from a position higher than the first carrier surface to a position lower than the first carrier surface, thus transferring the wafer 500 to the carrier mechanism 130. Then, the inspection mechanism 140 recalibrates the wafer 500.

[0043] In the embodiments disclosed in this application, the robotic arm 410 can first transfer the wafer 500 to the guide support portion 152. The guide support portion 152 has a guide slope 1521. Under the gravity of the wafer 500, the guide slope 1521 can center the wafer 500, thereby performing preliminary calibration of the wafer 500's position. As the guide support portion 152 moves from the first position to the second position, the wafer 500 is transferred to the support mechanism 130. When the deviation of the wafer 500 is large, the guide slope 1521 can center the wafer 500 to perform preliminary calibration of the wafer's position, thereby allowing the wafer 500 to be supported on the support mechanism 130 with a smaller deviation. Therefore, the wafer calibration device in this application can accommodate a large range of deviations. Furthermore, the wafer 500 being supported on the support mechanism 130 with a smaller deviation makes it less likely for the wafer 500 to fall off the support mechanism 130. Therefore, this solution improves the compatibility and safety of the wafer calibration device.

[0044] Furthermore, when the deviation between the robotic arm 410 and the wafer 500 exceeds the calibration range of the detection mechanism 140, the guiding alignment mechanism 150 can perform preliminary calibration of the wafer 500, thereby adjusting the deviation of the wafer 500 to within the calibration range of the detection mechanism 140, before further calibration. Therefore, the wafer calibration device disclosed in this application allows for a relatively large range of wafer 500 positional deviations that can be calibrated.

[0045] In the above embodiments, the guide support portion 152 can be a ring structure. The size of the ring structure guide support portion 152 is relatively large, thus occupying a large internal space of the wafer calibration device.

[0046] Based on this, in another optional embodiment, the guide support portion 152 may include at least three guide support blocks, which are distributed circumferentially along the support mechanism 130. Each of the at least three guide support blocks may have a guide ramp 1521 and a second support surface 1522. In this solution, at least three guide support blocks are supported at at least three locations on the wafer 500. Compared to the annular structure of the guide support portion 152, the volume of the at least three guide support blocks is smaller, thus occupying less internal space in the wafer calibration chamber 100.

[0047] The center of the aforementioned guide bearing part 152 can be the center of the circumference of at least three guide bearing blocks.

[0048] In another optional embodiment, the lifting assembly 151 may include a drive source 1511, a lifting platform 1512, and multiple support rods 1513. The drive source 1511 may be connected to the lifting platform 1512, and the multiple support rods 1513 may be spaced apart on the lifting platform 1512. Each support rod 1513 may be connected to a guide support block. In this scheme, the drive source 1511 drives multiple support rods 1513 to rise and fall simultaneously through the lifting platform 1512, thus enabling multiple guide support blocks to rise and fall simultaneously, thereby reducing the likelihood of multiple guide support blocks rising and falling at different heights.

[0049] Furthermore, the lifting assembly 151 also includes multiple mounting plates 1514, each of which can be disposed at the end of the support rod 1513 opposite to the lifting platform 1512. Guide bearing blocks can be mounted on the mounting plates 1514, and the mounting position of the guide bearing blocks on the mounting plates 1514 can be adjusted radially along the bearing mechanism 130. In this way, the adjustable mounting position of the guide bearing blocks on the mounting plates 1514 can meet the calibration requirements of wafers 500 of different sizes, thereby improving the compatibility of the wafer calibration device.

[0050] Furthermore, by adjusting the installation position of the guide block, the calibration accuracy of the wafer 500 can be further improved.

[0051] Optionally, the mounting plate 1514 has multiple slots along the radial direction of the bearing mechanism 130, and the guide bearing block can be snapped into one of the slots. Alternatively, the mounting plate 1514 has threaded holes along the radial direction of the bearing mechanism 130, and the guide bearing block is fixed in one of the threaded holes by bolts.

[0052] In the above embodiment, the lifting assembly 151 further includes a lead screw transmission mechanism 1515 and a coupling 1516, both located below the bearing mechanism 130. The lead screw transmission mechanism 1515 is connected to the drive source 1511 via the coupling 1516, and the lifting platform 1512 is connected to the lead screw transmission mechanism 1515. The drive source 1511 drives the lead screw transmission mechanism 1515 to rotate via the coupling 1516, and the lead screw transmission mechanism 1515 drives the lifting platform 1512 to rise and fall.

[0053] In another optional embodiment, the lifting assembly 151 may further include a first detection switch 1517a, a second detection switch 1517b, and a switch trigger 1519. The switch trigger 1519 may be disposed on the lifting platform 1512, and both the first detection switch 1517a and the second detection switch 1517b may be fixedly disposed below the supporting mechanism 130. Optionally, a fixed bracket may be disposed below the supporting mechanism 130, and the first detection switch 1517a and the second detection switch 1517b may be fixed on the fixed bracket, or the first detection switch 1517a and the second detection switch 1517b may be fixed on the mounting base 110, or the first detection switch 1517a and the second detection switch 1517b may be fixed on the chamber body 101 described below.

[0054] When the switch trigger 1519 triggers the first detection switch 1517a, the guide carrier 152 is in the first position. At this time, when the first detection switch 1517a outputs a signal, the guide carrier 152 is in the first position, and the wafer 500 can be transferred. When the switch trigger 1519 triggers the second detection switch 1517b, the guide carrier 152 is in the second position. At this time, when the second detection switch 1517b outputs a signal, the guide carrier 152 is in the second position, and the wafer 500 is transferred onto the carrier mechanism 130.

[0055] In this scheme, the first detection switch 1517a and the second detection switch 1517b can output the position of the guide support part 152, so that there is no need for manual judgment of the position of the guide support part 152, thus avoiding human error.

[0056] Optionally, the first detection switch 1517a and the second detection switch 1517b can be contact switches, whereby the switch trigger key contacts the first detection switch 1517a or the second detection switch 1517b to output a signal. Alternatively, the first detection switch 1517a and the second detection switch 1517b can be photoelectric sensors, whereby the switch trigger element 1519 blocks the light source signal of the photoelectric sensor, thereby causing the photoelectric sensor to output a signal.

[0057] To prevent the guide support portion 152 from colliding with other components of the wafer calibration device due to excessive travel, in another optional embodiment, the lifting assembly 151 may further include a first limit switch 1518a and a second limit switch 1518b. A first detection switch 1517a and a second detection switch 1517b may be fixedly disposed between the first limit switch 1518a and the second limit switch 1518b. A switch trigger 1519 may trigger either the first limit switch 1518a or the second limit switch 1518b. The first limit switch 1518a and the second limit switch 1518b are used to limit the travel of the guide support portion 152.

[0058] In this design, due to the limitations imposed by the first limit switch 1518a and the second limit switch 1518b, the moving distance of the guide support part 152 is the distance between the first limit switch 1518a and the second limit switch 1518b. Therefore, it is possible to prevent collisions with other components due to the longer distance of the guide support part 152.

[0059] Specifically, when the first limit switch 1518a or the second limit switch 1518b sends a signal, the motor of the drive source 1511 locks up and stops working, and the guide bearing part 152 no longer moves.

[0060] Optionally, the first limit switch 1518a and the second limit switch 1518b can be contact switches or photoelectric sensors. Of course, other structures are also possible, and this article does not impose any limitations.

[0061] In another alternative embodiment, the angle between the guide ramp 1521 and the second bearing surface 1522 can be greater than or equal to 120° and less than or equal to 150°. In this embodiment, the component force pointing towards the center of the guide bearing portion 152 is larger, thus the guiding performance of the guide bearing portion 152 is better.

[0062] Optionally, such as Figure 12 As shown, the projected length L1 of the second bearing surface 1522 can be 5.5mm, the projected length L2 of the guide slope 1521 can be 4.5mm, and the distance L3 from the edge of the second bearing surface 1522 to the mounting point of the guide bearing block can be 20mm. Here, L3 can also be understood as the length of the guide bearing block.

[0063] like Figure 13As shown, wafer 500 is supported on the second support surface 1522. When the center of wafer 500 coincides with the center point of guide support portion 152, the positional deviation of wafer 500 can be assumed to be 0. Here, R1 represents the radius of the smallest inscribed circle between the center points of the second support surface 1522 and guide support portion 152, R2 represents the radius of wafer 500, R3 is the radius of the largest inscribed circle between the center points of the second support surface 1522 and guide support portion 152, R4 represents the radius of the inscribed circle between the intersection of guide slope 1521 and the second support surface 1522 and the center point of guide support portion 152, and R5 represents the radius of the inscribed circle between the mounting point of guide support block and the center point of guide support portion 152. At this point, the maximum allowable deviation of the wafer 500 by the guiding alignment mechanism 150 is related to R2 and R1. The maximum allowable deviation of the wafer 500 by the guiding alignment mechanism 150 can be the distance from the outer diameter of the wafer 500 to the inner edge of the second bearing surface 1522, i.e., ΔL1 = R1 - R2. ΔL1 is the maximum allowable deviation of the wafer 500 by the guiding alignment mechanism 150. When the wafer 500 is mounted on the second bearing surface 1522, the deviation of the wafer 500 after alignment can be expressed as ΔL2, ΔL2 = R2 - R4. According to the attached figures, the following formulas can also be derived: R1 = R5 - L3, R3 = R1 + L1 + L3, R4 = R1 + L1.

[0064] Taking a wafer 500 with a radius R2 of 100mm as an example, R5 can be 115mm, L1 can be 5.5mm, L2 can be 4.5mm, and L3 can be 20mm. This results in an R1 of 95mm, where ΔL1 is 5mm. Similarly, an R4 of 100.5mm results in ΔL2 of 0.5mm. Therefore, if the positional deviation ΔL1 of wafer 500 before being placed in the guide alignment mechanism 150 is less than 5mm, after automatic alignment by the guide alignment mechanism 150, the positional deviation ΔL2 of wafer 500 will not exceed 0.5mm. To further reduce ΔL2, the installation position of the guide support block can be adjusted to correct ΔL2, i.e., adjust the size of R5.

[0065] To prevent interference between the robot arm 410 and the guide support block, in another optional embodiment, the distance between two adjacent guide support blocks is greater than the width of the robot arm 410. In this case, the robot arm 410 can extend between two adjacent guide support blocks during the placement process, thus making it less likely to interfere with the guide support block.

[0066] In the above embodiments, when the robotic arm 410 picks up the calibrated wafer 500, it is easy to interfere with the guide bearing part 152.

[0067] Based on this, in another optional embodiment, the mounting base is composed of at least three sector plates sequentially spliced ​​together, with mounting gaps between adjacent sector plates. The lifting assembly 151 can be located below the mounting base 110, and the support rod 1513 can pass through the mounting gaps and connect to the guide support block. When the guide support part 152 is in the second position, each guide support block can be located within its corresponding mounting gap. In this scheme, when the robot arm 410 grips the calibrated wafer 500, each guide support block can be located within its corresponding mounting gap, and the guide support block is hidden within the corresponding mounting gap, making it less likely to interfere with the robot arm 410. In addition, the lifting assembly 151 can be located below the mounting base 110, thereby making it less likely for the lifting assembly 151 to interfere with the components above the mounting base 110.

[0068] In another alternative embodiment, the support mechanism 130 may include a base body 131 and a plurality of ejector pins 132. The ejector pins 132 may be spaced apart on the base body 131, and the tips of the ejector pins 132 form a first support surface. In this embodiment, the base body 131 is used to support the plurality of ejector pins 132, which form a hollow structure, thus providing a larger space for the robot arm 410 to grip the wafer 500. Simultaneously, the ejector pins 132 are typically elongated structures, thus providing a larger gripping space, thereby facilitating the robot arm 410 to grip the wafer 500.

[0069] Optionally, when each guide block can be located within its corresponding installation gap, the upper surface of the guide block is at least flush with the upper surface of the base body 131.

[0070] In the above embodiments, when the detection mechanism 140 detects the position and outline shape of the wafer 500, the wafer 500 can remain stationary. At this time, the detection mechanism 140 needs to have a large detection range to cover the entire outline of the wafer 500, so the detection is difficult and the detection accuracy is poor.

[0071] Based on this, in another optional embodiment, the wafer calibration apparatus may further include a rotation mechanism 120, the drive end of which is rotatably connected to the base body 131 for driving the base body 131 to rotate around its central axis. The detection mechanism 140 can be used to detect the position and contour shape of the wafer 500 during the rotation of the wafer 500.

[0072] In the specific operation process, when the wafer 500 is transferred to the carrier mechanism 130, the rotation mechanism 120 drives the wafer 500 to rotate through the carrier mechanism 130, and the detection mechanism 140 recalibrates the wafer 500.

[0073] In this scheme, during the rotation of the wafer 500, the detection mechanism 140 can obtain the position and outline shape of the entire wafer 500. The detection mechanism 140 does not need to cover the entire wafer 500, so the detection mechanism 140 does not need a large detection range, which makes the detection difficulty lower and the detection accuracy higher.

[0074] Optionally, the aforementioned rotating mechanism 120 can be a drive motor, pneumatic cylinder, hydraulic cylinder, or other components. Of course, it can also be other power structures, which are not limited in this article.

[0075] In an optional embodiment, the detection mechanism 140 may include a transmitter 141 and a receiver 142. The transmitter 141 may be disposed opposite to the receiver 142. A receiving groove is formed on the upper surface of one of the sector plates. One of the transmitter 141 and the receiver 142 is disposed in the receiving groove, and the other may be disposed on the chamber body 101 mentioned below, or on a mounting bracket disposed on the sector plate. When the first bearing surface carries the wafer 500, the edge of the wafer 500 may be located between the transmitter 141 and the receiver 142.

[0076] The transmitter 141 can transmit signals, and the receiver 142 receives the signals transmitted by the transmitter 141. During the rotation of the wafer 500, the receiver 142 collects the signals of the transmitter 141 that are blocked by the wafer 500, and obtains the position and outline shape of the wafer 500.

[0077] Specifically, such as Figure 14 As shown, when wafer 500 is circular and coincides with the center of the support mechanism 130, meaning there is no positional offset, the portion of the signal emitted by transmitter 141 that is blocked by wafer 500 is exactly the same as the set comparison value when wafer 500 rotates. When wafer 500 is circular and deviates from the support mechanism 130, the signal emitted by transmitter 141 blocked by wafer 500 changes when wafer 500 rotates. By comparing the blocked signal with the set comparison value, the positional deviation of wafer 500 can be determined. If wafer 500 has feature points, such as flat edges or "V"-shaped openings, a sudden change in signal will occur at the feature points, which can then be identified by the detection mechanism 140.

[0078] In this scheme, the transmitter 141 can transmit signals and the receiver 142 can receive signals. By observing the changes in the received signals, the shape and position of the wafer 500 can be identified, thereby making the structure of the detection mechanism 140 simple and reliable.

[0079] Optionally, the transmitter 141 can be an infrared light transmitter or other light source transmitter, which is not limited herein.

[0080] In the above embodiment, when the detection mechanism 140 detects the position and outline shape information of the wafer 500, the detection mechanism 140 transmits the position and outline shape information of the wafer 500 to the controller of the semiconductor process equipment, and the controller adjusts the wafer picking position of the robot arm 410. For example, when the wafer 500 has feature points, the wafer picking direction of the robot arm 410 is consistent with the direction of the feature points of the wafer 500.

[0081] Based on the wafer calibration apparatus of any of the above embodiments of this application, this application also discloses a wafer calibration chamber, wherein the disclosed semiconductor chamber has the wafer calibration chamber of any of the above embodiments.

[0082] The wafer calibration chamber 100 disclosed in this application may further include a chamber body 101, which serves as the mounting base for the wafer calibration chamber 100. The aforementioned guide support 152, support mechanism 130, mounting base 110, and detection mechanism 140 may all be located within the chamber body 101, and the aforementioned lifting assembly 151 may be located below the chamber body 101.

[0083] Specifically, the mounting base 110 can be disposed on the bottom wall of the chamber body 101, and a portion of the lifting assembly 151 can pass through the bottom wall of the chamber body 101 and connect to the guide support portion 152. When the lifting assembly 151 includes a support rod, the support rod passes through the bottom wall of the chamber body 101 and connects to the guide support portion 152.

[0084] Based on the wafer calibration chamber 100 of any of the above embodiments of this application, this application also discloses a semiconductor process apparatus, wherein the disclosed semiconductor chamber has the wafer calibration chamber 100 of any of the above embodiments.

[0085] like Figure 15 As shown, the semiconductor process equipment disclosed in this application also includes a wafer carrier chamber 200, a process chamber 300, and a transfer chamber 400. The wafer carrier chamber 200 is used to carry the wafer 500, the process chamber 300 is used to process the wafer 500, and the transfer chamber 400 realizes the transfer of the wafer 500 between chambers. A robot arm 410 can be provided in the transfer chamber 400. The robot arm 410 can be used to transfer the wafer 500 in the wafer carrier chamber 200 to the wafer calibration chamber 100 for calibration, and then transfer the calibrated wafer into the process chamber 300.

[0086] Based on the semiconductor process equipment described in the above embodiments of the present invention, the present invention also discloses a wafer calibration method, which is applied to the semiconductor process equipment described above, such as... Figure 16 As shown, the calibration method for this wafer includes:

[0087] S100 drives the robotic arm 410 carrying the wafer 500 to move to the wafer transfer position.

[0088] The wafer transfer position here refers to the position of the robot arm 410 within the wafer calibration chamber 100. The wafer transfer position should be higher than the first position of the guide carrier 152.

[0089] S200, drive the robotic arm 410 to descend, so that the wafer 500 is transferred to the guide ramp 1521 of the guide support part 152 located in the first position.

[0090] During the descent of the robotic arm 410, its position gradually decreases below the first position, allowing the wafer 500 to be transferred onto the guide support 152. When the wafer 500 deviates from its intended path, its edge overlaps with the guide ramp 1521. The wafer 500 is then aligned under the influence of gravity.

[0091] S300, the drive guide bearing part 152 moves downward from the first position, and the wafer 500 is guided into the second bearing surface 1522 via the guide slope 1521 and is centered in the process.

[0092] When wafer 500 is transferred onto guide carrier 152, guide carrier 152 begins to move. Therefore, guide carrier 152 completes centering before it begins to move downwards, or before it moves to the second position. During its downward movement, guide carrier 152 can accelerate the centering of wafer 500.

[0093] S400, the drive guide bearing 152 continues to move downward so that the wafer 500 is transferred from the second bearing surface 1522 to the first bearing surface.

[0094] At this time, the drive guide bearing 152 moves from the first position to the second position, so that the wafer 500 is transferred to the bearing mechanism 130. The second position can be the position where the aforementioned guide bearing block is located within the mounting gap. This document does not impose specific limitations on the second position; in the second position, it is sufficient that the second bearing surface 1522 is lower than the first bearing surface.

[0095] After initial calibration by the guiding alignment mechanism 150, the wafer 500 is transferred to the carrier mechanism 130 for further calibration.

[0096] In this design, when the wafer 500 has a large deviation, the guide ramp 1521 can center the wafer 500 to perform preliminary calibration of its position, thereby allowing the wafer 500 to be supported on the support mechanism 130 with a smaller deviation. The wafer calibration device in this application can accommodate a wide range of deviations. Furthermore, the small deviation of the wafer 500 on the support mechanism 130 makes it less likely for the wafer 500 to fall off. Therefore, this design improves the compatibility and safety of the wafer calibration device.

[0097] In another alternative embodiment, such as Figure 17 As shown, after step S400, the calibration method may further include:

[0098] S500, the control guide bearing 152 continues to descend to a position lower than the take-up position of the robot arm 410.

[0099] Simply move the guide support 152 down to a position that does not affect the robot arm 410's gripping of the wafer 500.

[0100] S600, the control rotation mechanism 120 drives the bearing mechanism 130 to rotate the wafer 500, and the detection mechanism 140 detects the position and outline shape of the wafer 500.

[0101] S700: Based on the detection information from the detection agency 140, obtain the positional deviation of the wafer 500 to adjust the coordinates of the wafer pick-up position of the robot arm 410.

[0102] Based on the obtained wafer position deviation, the wafer picking position data of the robot 410 is adjusted to compensate for the position deviation of the wafer 500.

[0103] S800: Control the robot arm 410 to move to the wafer picking position according to the adjusted coordinates, and control the robot arm 410 to rise to the gripping position so that the wafer 500 is transferred from the first bearing surface to the robot arm 410.

[0104] The rotating mechanism 120 drives the wafer 500 to rotate via the carrying mechanism 130, and the detection mechanism 140 detects the position and outline shape of the wafer 500. Based on the detection information from the detection mechanism 140, the picking position of the robot arm 410 is adjusted to compensate for the positional deviation of the wafer 500.

[0105] In this scheme, during the rotation of the wafer 500, the detection mechanism 140 can obtain the position and outline shape of the entire wafer 500. The detection mechanism 140 does not need to cover the entire wafer 500, so the detection mechanism 140 does not need a large detection range, which makes the detection difficulty lower and the detection accuracy higher.

[0106] The above embodiments of the present invention focus on describing the differences between the various embodiments. As long as the different optimization features between the various embodiments are not contradictory, they can be combined to form a better embodiment. For the sake of brevity, they will not be described in detail here.

[0107] The above description is merely an embodiment of the present invention and is not intended to limit the invention. Various modifications and variations can be made to the present invention by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principle of the present invention should be included within the scope of the claims of the present invention.

Claims

1. A wafer calibration chamber, applied in semiconductor process equipment, wherein a robotic arm (410) is provided in a transfer chamber (400) of the semiconductor process equipment, the robotic arm (410) being used to transfer a wafer (500) in a wafer carrier chamber (200) to the wafer calibration chamber (100) for calibration, and to transfer the calibrated wafer (500) into a process chamber (300), characterized in that, The wafer calibration chamber (100) includes a chamber body (101) and a wafer calibration device, the wafer calibration device including a support mechanism (130), a guiding alignment mechanism (150) and a detection mechanism (140). The carrier mechanism (130) has a first carrier surface for carrying a wafer (500). The guiding centering mechanism (150) includes a lifting assembly (151) and a guiding support part (152). The lifting assembly (151) is connected to the guiding support part (152) and is used to drive the guiding support part (152) to rise and fall so that the guiding support part (152) is located in a first position or a second position. The guiding support part (152) is arranged around the support mechanism (130). The guiding support part (152) and the support mechanism (130) are both arranged inside the chamber body (101), and the lifting assembly (151) is arranged below the chamber body (101). The guide bearing portion (152) has a guide slope (1521) and a second bearing surface (1522) parallel to the first bearing surface. The guide slope (1521) is used to guide the wafer (500) into the second bearing surface (1522) and achieve centering in the process. When the guide bearing part (152) is in the first position, the second bearing surface (1522) is higher than the first bearing surface; when the guide bearing part (152) is in the second position, the second bearing surface (1522) is lower than the first bearing surface. The guide carrier (152) first moves to the first position, and the robot transfers the wafer (500) to the guide carrier (152). The wafer (500) is initially calibrated on the guide carrier (152). Then it is transferred to the carrier mechanism (130). The detection mechanism (140) is used to detect the position and contour information of the wafer (500) on the first carrier surface. The position and contour information detected by the detection mechanism (140) is transmitted to the control device of the semiconductor process equipment so that the control device can obtain the compensation information of the robot (410) that grips the wafer (500) according to the position and contour information, thereby correcting the position information of the robot (410) gripping the wafer (500) to compensate for the position deviation of the wafer (500) and to recalibrate the wafer (500).

2. The wafer calibration chamber according to claim 1, characterized in that, The guide bearing part (152) includes at least three guide bearing blocks, which are distributed circumferentially along the bearing mechanism (130). Each of the at least three guide bearing blocks has the guide inclined surface (1521) and the second bearing surface (1522). The lifting assembly (151) includes a drive source (1511), a lifting platform (1512), and a plurality of support rods (1513). The drive source (1511) is connected to the lifting platform (1512), and the plurality of support rods (1513) are spaced apart on the lifting platform (1512). Each support rod (1513) is connected to a guide support block.

3. The wafer calibration chamber according to claim 2, characterized in that, The lifting assembly (151) also includes a plurality of mounting plates (1514), each of the mounting plates (1514) being disposed at one end of the support rod (1513) away from the lifting platform (1512), the guide bearing block being mounted on the mounting plate (1514), and the mounting position of the guide bearing block on the mounting plate (1514) being adjustable radially along the bearing mechanism (130).

4. The wafer calibration chamber according to claim 2, characterized in that, The lifting assembly (151) further includes a first detection switch (1517a), a second detection switch (1517b), and a switch trigger (1519). The switch trigger (1519) is disposed on the lifting platform (1512). The first detection switch (1517a) and the second detection switch (1517b) are both fixedly disposed below the bearing mechanism (130). When the switch trigger (1519) triggers the first detection switch (1517a), the guide support (152) is in the first position; when the switch trigger (1519) triggers the second detection switch (1517b), the guide support (152) is in the second position.

5. The wafer calibration chamber according to claim 4, characterized in that, The lifting assembly (151) further includes a first limit switch (1518a) and a second limit switch (1518b). The first detection switch (1517a) and the second detection switch (1517b) are fixedly disposed between the first limit switch (1518a) and the second limit switch (1518b). The switch trigger (1519) can trigger the first limit switch (1518a) or the second limit switch (1518b). The first limit switch (1518a) and the second limit switch (1518b) are used to limit the stroke of the guide bearing part (152).

6. The wafer calibration chamber according to claim 1, characterized in that, The angle between the guide ramp (1521) and the second bearing surface (1522) is greater than or equal to 120° and less than or equal to 150°.

7. The wafer calibration chamber according to claim 2, characterized in that, The wafer calibration device further includes a mounting base (110), and the support mechanism (130) includes a base body (131) and a plurality of ejector pins (132). The plurality of ejector pins (132) are spaced apart on the base body (131), and the top ends of the plurality of ejector pins (132) form the first support surface. The mounting base (110) is arranged around the base body (131), and the mounting base (110) is composed of at least three sector plates spliced ​​together in sequence. There is an installation gap between adjacent sector plates. The lifting assembly (151) is located below the mounting base (110). The support rod (1513) passes through the installation gap and is connected to the guide bearing block. When the guide bearing part (152) is in the second position, each guide bearing block is located in its corresponding installation gap.

8. The wafer calibration chamber according to claim 7, characterized in that, The wafer calibration device also includes a rotating mechanism (120), the driving end of which is rotatably connected to the base body (131) for driving the base body (131) to rotate around its central axis; The detection mechanism (140) is disposed on the mounting base (110) and is used to detect the position and outline shape of the wafer (500) during the rotation of the wafer (500).

9. The wafer calibration chamber according to claim 8, characterized in that, The detection mechanism (140) includes a transmitter (141) and a receiver (142), the transmitter (141) and the receiver (142) are arranged opposite to each other, and a receiving groove is provided on the upper surface of one of the sector plates, and one of the transmitter (141) and the receiver (142) is disposed in the receiving groove; When the first bearing surface carries the wafer (500), the edge of the wafer (500) is located between the transmitter (141) and the receiver (142). The transmitter (141) transmits a signal, and the receiver (142) receives the signal transmitted by the transmitter (141). During the rotation of the wafer (500), the receiver (142) collects the signal of the transmitter (141) blocked by the wafer (500) and obtains the position and outline shape of the wafer (500).

10. A semiconductor process apparatus, characterized in that, The device includes a wafer carrier chamber (200), a process chamber (300), a transfer chamber (400), and a wafer calibration chamber (100) according to any one of claims 1 to 9. A robot (410) is provided in the transfer chamber (400). The robot (410) is used to transfer the wafer (500) in the wafer carrier chamber (200) to the wafer calibration chamber (100) for calibration, and to transfer the calibrated wafer into the process chamber (300).

11. A wafer calibration method, applied to the semiconductor process equipment of claim 10, characterized in that, The calibration method includes: Drive the robotic arm (410) carrying the wafer (500) to move to the wafer transfer position; The robotic arm (410) is driven to descend, so that the wafer (500) is transferred to the guide ramp (1521) of the guide support (152) located in the first position; The guide support (152) is driven to move downward from the first position, and the wafer (500) is guided into the second support surface (1522) through the guide ramp (1521) and centered in the process; The guide carrier (152) is driven to continue moving downward so that the wafer (500) is transferred from the second carrier surface (1522) to the first carrier surface.

12. The calibration method according to claim 11, characterized in that, After transferring the wafer (500) from the second carrier surface (1522) to the first carrier surface, the process further includes: The guide support (152) is controlled to continue descending to a position lower than the take-up position of the robot (410); The control rotation mechanism (120) drives the support mechanism (130) to rotate the wafer (500), and the detection mechanism (140) detects the position and outline shape of the wafer (500); Based on the detection information from the detection mechanism (140), the positional deviation of the wafer (500) is obtained to adjust the coordinates of the wafer picking position of the robotic arm (410); The robot (410) is controlled to move to the wafer picking position according to the adjusted coordinates, and the robot (410) is controlled to rise to the gripping position so that the wafer (500) is transferred from the first bearing surface to the robot (410).

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