Ion implantation defined nanorods in suspended Majorana fermion devices

Abstract

Devices, systems, methods, computer-implemented methods, apparatus, and / or computer program products that can facilitate a suspended Majorana fermion device (2206) including ion implant defined nanorods (406) in a semiconductive device are provided. According to embodiments, a quantum computing device can include a Majorana fermion device coupled to an ion implant region (404). The quantum computing device can further include an encapsulation film (1404) coupled to the ion implant region and a substrate layer. The encapsulation film suspends the Majorana fermion device in the quantum computing device.

Description

Background Art

[0001] The present disclosure relates to Majorana fermion devices and methods for forming the same. More particularly, the present disclosure relates to ion implantation-defined nanorods in suspended Majorana fermion devices and methods for forming the same. Summary of the Invention

[0002] The following is presented to provide a basic understanding of one or more embodiments of the present invention. This summary is not intended to identify key or critical elements or to delineate any scope of a particular embodiment or any scope of the claims. Its sole purpose is to present concepts in a simplified form as a prelude to the more detailed description that is presented later. In one or more embodiments described herein, devices, systems, methods, computer-implemented methods, devices, and / or computer program products are described that facilitate suspended Majorana fermion devices comprising ion-implantation-confined nanorods in semiconducting devices.

[0003] According to an embodiment, a quantum computing device may include a Majorana fermion device coupled to an ion implantation region. The quantum computing device may also include an encapsulation film coupled to the ion implantation region and the substrate layer. The encapsulation film suspends the Majorana fermion device in the quantum computing device.

[0004] According to an embodiment, a method may include forming an ion implantation region coupled to a Majorana fermion device in a quantum computing device. The method may also include forming an encapsulation film coupled to the ion implantation region and the substrate layer to suspend the Majorana fermion device in the quantum computing device.

[0005] According to an embodiment, a device may include a Majorana fermion device including nanorods defined by ion implantation. The device may also include a superconducting layer coupled to the nanorods defined by ion implantation. BRIEF DESCRIPTION OF THE DRAWINGS

[0006] Figure 1 A cross-sectional side view of an example non-limiting device that may include multiple semiconductor layers formed on a substrate layer according to one or more embodiments described herein is shown.

[0007] Figure 2 shows a superconducting layer after forming it according to one or more embodiments described herein. Figure 1 A cross-sectional side view of an example non-limiting device.

[0008] Figure 3A and 3B and FIG. 1 respectively show the steps after forming a first resist layer according to one or more embodiments described herein. Figure 2Top view and cross-sectional views of example non-limiting devices.

[0009] Figure 4A and 4B ion implantation-defined nanorods and an ion implantation-defined sensing region according to one or more embodiments described herein. Figure 3A and 3B Top view and cross-sectional views of example non-limiting devices.

[0010] Figure 5A and 5B and FIG. 1 respectively show a superconducting layer after performing a wet etching process to remove a portion of the superconducting layer according to one or more embodiments described herein. Figure 4A and 4B Top view and cross-sectional views of example non-limiting devices.

[0011] Figure 6A and 6B and FIG. 1 respectively show a first resist layer after forming a second resist layer on and / or around the first resist layer according to one or more embodiments described herein. Figure 5A and 5B Top view and cross-sectional views of example non-limiting devices.

[0012] Figure 7A and 7B 1 and 2 respectively show the structure of the superconducting layer after performing a wet etching process to remove portions of the superconducting layer from the nanorods defined by ion implantation and after stripping the first and second resist layers according to one or more embodiments described herein. Figure 6A and 6B Top view and cross-sectional views of example non-limiting devices.

[0013] Figure 8A and 8B and FIG. 1 respectively show the structure of the substrate after forming a resist layer according to one or more embodiments described herein. Figure 7A and 7B Top view and cross-sectional views of example non-limiting devices.

[0014] Figure 9A and 9B and FIG. 1 , respectively, after performing a wet etching process to remove a portion of the superconducting layer from the semiconducting layer according to one or more embodiments described herein. Figure 8A and 8B Top view and cross-sectional views of example non-limiting devices.

[0015] Figure 10A and 10B Figures 1 and 2 respectively show the structure of the substrate after stripping the resist layer according to one or more embodiments described herein. Figure 9A and9B Top view and cross-sectional views of example non-limiting devices.

[0016] Figure 11A and 11B and FIG. 1 respectively show the structure of the substrate after forming a resist layer according to one or more embodiments described herein. Figure 10A and 10B Top view and cross-sectional views of example non-limiting devices.

[0017] Figure 12A and 12B Figures 1 and 2 respectively show the process of depositing a metal layer to form one or more wirings according to one or more embodiments described herein. Figure 11A and 11B Top view and cross-sectional views of example non-limiting devices.

[0018] Figure 13A and 13B Figures 1 and 2 respectively show the structure of the substrate after removing the resist layer and / or the metal layer according to one or more embodiments described herein. Figure 12A and 12B Top view and cross-sectional views of example non-limiting devices.

[0019] Figure 14A and 14B The following diagrams respectively show the process of forming a packaging film according to one or more embodiments described herein. Figure 13A and 13B Top view and cross-sectional views of example non-limiting devices.

[0020] Figure 15A and 15B and FIG. 1 respectively show the second substrate layer after bonding to the packaging film according to one or more embodiments described herein. Figure 14A and 14B Top view and cross-sectional views of example non-limiting devices.

[0021] Figure 16A and 16B Figures 1 and 2 respectively show the structure of the substrate after removing the substrate layer according to one or more embodiments described herein. Figure 15A and 15B Top view and cross-sectional views of example non-limiting devices.

[0022] Figure 17A and 17B and FIG. 1 respectively show the structure of the semiconductor layer after removing the semiconductor layer according to one or more embodiments described herein. Figure 16A and 16B Top view and cross-sectional views of example non-limiting devices.

[0023] Figure 18A and18B and FIG. 1 respectively show the structure of the substrate after spinning and forming a resist layer according to one or more embodiments described herein. Figure 17A and 17B Top view and cross-sectional views of example non-limiting devices.

[0024] Figure 19A and 19B Figures 1 and 2 respectively show the process of depositing a metal layer to form one or more wirings according to one or more embodiments described herein. Figure 18A and 18B Top view and cross-sectional views of example non-limiting devices.

[0025] Figure 20A and 20B Figures 1 and 2 respectively show the structure of the substrate after removing the resist layer and the metal layer according to one or more embodiments described herein. Figure 19A and 19B Top view and cross-sectional views of an exemplary non-limiting device.

[0026] Figure 21A and 21B Figures 1 and 2 respectively show the steps after removing one or more portions of the ion implantation region from the packaging film to form one or more openings according to one or more embodiments described herein. Figure 20A and 20B Top view and cross-sectional views of example non-limiting devices.

[0027] Figure 22A and 22B Figures 1 and 2 respectively show the structure of a device after removing one or more portions of an encapsulating film to form one or more hollow spaces and a suspended Majorana fermion device according to one or more embodiments described herein. Figure 21A and 21B Top view and cross-sectional views of example non-limiting devices.

[0028] Figure 23A and 23B Figures 1 and 2 respectively show the structure of the packaging film after removing one or more portions of the packaging film and depositing one or more metal pads according to one or more embodiments described herein. Figure 21A and 21B Top view and cross-sectional views of example non-limiting devices.

[0029] Figure 24 A top view of an example non-limiting device that can facilitate a suspended Majorana fermion device including ion-implantation-defined nanorods in a semiconducting device according to one or more embodiments described herein is shown.

[0030] Figure 25A flow chart illustrating an example non-limiting method that can facilitate a suspended Majorana fermion device including ion implantation-defined nanorods in a semiconducting device according to one or more embodiments described herein.

[0031] Figure 26 A block diagram illustrating an example non-limiting operating environment that can facilitate one or more embodiments described herein is shown. DETAILED DESCRIPTION

[0032] The following detailed description is illustrative only and is not intended to limit the embodiments and / or the application or uses of the embodiments. In addition, it is not intended to be bound by any explicit or implicit information presented in the previous background or summary sections or detailed description sections.

[0033] One or more embodiments will now be described with reference to the accompanying drawings, wherein like reference numerals are used throughout to refer to like elements. In the following description, for purposes of explanation, numerous specific details are set forth to provide a more thorough understanding of one or more embodiments. However, it will be apparent that, in various circumstances, one or more embodiments may be practiced without these specific details. It should be noted that the drawings provided herein are for illustrative purposes only and, therefore, are not drawn to scale.

[0034] Some existing quantum computing technologies attempt to utilize the potential advantages of Majorana fermions by incorporating the quantum phenomenon of Majorana fermions. Majorana fermions (also known as Majorana particles (quasiparticles)) are fermions that have the properties of being their own antiparticles. Majorana fermion devices (e.g., Majorana fermion-based devices) may include structures of semiconducting and / or superconducting materials that can simulate Majorana fermions and / or facilitate measurements that can be observed as characteristics of Majorana fermions (e.g., behavior, function, properties, etc.). For example, at the interface of a semiconducting nanorod and a superconducting material, superconducting behavior can be observed in the surface of the semiconducting nanorod, which simulates the characteristics of Majorana fermions.

[0035] The aforementioned Majorana fermion devices can be implemented as Majorana qubits in quantum devices and / or quantum computing devices. Such quantum devices and / or Majorana qubits offer the potential for long coherence times and / or fast and potentially universal quantum computing. However, given the delicate nature of Majorana fermions, it is very difficult to fabricate efficient and / or robust Majorana fermion devices that can simulate Majorana fermions using existing semiconductor and / or superconductor fabrication techniques. Some examples of such challenges may include:

[0036] a) Produce extremely high quality interfaces and membranes.

[0037] b) Conventional processing damages the film (eg, reactive ion etching (RIE), rinsing, air oxidation, etc.).

[0038] c) Dielectrics quench coherence, so the challenge is to make wiring structures without dielectric films separating the structures (e.g. if they have trapped charge and can create quasiparticles, this could lead to uncontrolled electron density).

[0039] d) integrating multiple components, for example, integrating nanorods (e.g., III-V semiconducting nanorods, such as indium arsenide (InAs), etc.) in contact with a superconductor (e.g., aluminum (Al)) to create a Majorana fermion device that behaves like Majorana fermions; a sensing region (e.g., a quantum dot structure adjacent to the nanorods); a tunnel junction gate (e.g., to control the interaction between the quantum dot structure and the nanorods); a chemical potential control gate (e.g., to change the chemical potential of the nanorods by changing the voltage on the gate to facilitate setting the nanorods to the zero energy point required to simulate the characteristics of Majorana fermions); contacts and circuit wiring; semiconducting connections for the sensing region; and / or other components.

[0040] Figure 1-24 An exemplary, non-limiting, multi-step manufacturing sequence is shown that may be implemented to manufacture one or more embodiments of the present disclosure described herein and / or shown in the accompanying drawings. For example, Figure 1-24 The non-limiting multi-step fabrication sequence shown in FIG. 1 is used to fabricate a suspended Majorana fermion device comprising one or more ion-implanted nanorods in a semiconducting device. For example, according to one or more embodiments described herein, it is possible to achieve Figure 1-24 , to fabricate devices 100 through 2400, wherein devices 100 through 2100 and / or 2300 can be developed into devices 2200 and / or 2400 as described below. Devices 2200 and / or 2400 may include quantum computing devices (e.g., quantum circuits, quantum hardware, quantum processors, quantum computers, etc.) including one or more Majorana fermion devices 2206 (e.g., as shown in FIG. 1 ) having one or more ion-implanted confined nanorods 406. Figure 22A 、 22B , 24A, and 24B), where the Majorana fermion device 2206 may include a suspended Majorana fermion device. In one example, the device 2200 may include the Majorana fermion device 2206, which may be implemented as a Majorana qubit in the device 2400, where the device 2400 may include a quantum processor.

[0041] See below for reference Figure 1-24As described, the fabrication of the various embodiments of the present disclosure described herein and / or shown in the accompanying figures (e.g., device 2200, Majorana fermion device 2206, ion implantation defined nanorods 406, etc.) may include a multi-step sequence of, for example, photolithography and / or chemical processing steps that facilitate the stepwise creation of electronic-based systems, devices, components, and / or circuits in semiconducting devices (e.g., integrated circuits). For example, various embodiments of the present disclosure described herein and / or shown in the figures (e.g., device 2200, Majorana fermion device 2206, ion implantation defined nanorods 406, etc.) can be manufactured by using techniques including, but not limited to: photolithography, microlithography, nanolithography, nanoimprint lithography, photomask technology, patterning technology, photoresist technology (e.g., positive tone photoresist, negative tone photoresist, mixed tone photoresist, etc.), etching technology (e.g., reactive ion etching (RIE), dry etching, wet etching, ion beam etching, plasma etching, laser ablation, etc.), evaporation technology, sputtering technology, plasma ashing technology, thermal treatment (e.g., rapid thermal annealing, furnace annealing, thermal oxidation, etc.), chemical vapor deposition (CVD), atomic layer deposition (ALD), physical vapor deposition (PVD), molecular beam epitaxy (MBE), electrochemical deposition (ECD), chemical mechanical planarization (CMP), back grinding technology and / or other technologies for manufacturing integrated circuits.

[0042] See below for reference Figure 1-24 As mentioned, the various embodiments of the present disclosure described herein and / or shown in the figures (e.g., device 2200, Majorana fermion device 2206, ion implantation-defined nanorods 406, etc.) can be fabricated using a variety of materials. For example, the various embodiments of the present disclosure described herein and / or shown in the figures (e.g., device 2200, Majorana fermion device 2206, ion implantation-defined nanorods 406, etc.) can be fabricated using one or more different material classes, including, but not limited to, conductive materials, semiconductive materials, superconductive materials, dielectric materials, polymeric materials, organic materials, inorganic materials, non-conductive materials, and / or other materials that can be used with one or more of the techniques described above for fabricating integrated circuits.

[0043] It will be understood that when an element as a layer (also referred to as a film), region and / or substrate is referred to as being “on” or “above” another element, it may be directly on the other element, or there may be an intermediate element. In contrast, when an element is referred to as being “directly on” or “directly above” another element, there are no intermediate elements. It will also be understood that when an element is referred to as being “under” or “below” another element, it may be directly under or below the other element, or there may be an intermediate element. In contrast, when an element is referred to as being “directly under” or “directly below” another element, there are no intermediate elements. It will also be understood that when an element is referred to as being “coupled” to another element, it may describe one or more different types of couplings, including but not limited to chemical coupling, communication coupling, electrical coupling, physical coupling, operational coupling, optical coupling, thermal coupling and / or another type of coupling.

[0044] Figure 1 A cross-sectional side view of an example non-limiting device 100 is shown that may include multiple semiconductor layers formed on a substrate layer according to one or more embodiments described herein. The device 100 may include one or more III-V semiconductor compound layers formed on the substrate layer, as described below.

[0045] Device 100 may include a substrate layer 102. Substrate layer 102 may include any material having semiconductor properties, including but not limited to silicon (Si), sapphire (e.g., aluminum oxide (Al2O3)), silicon germanium (SiGe), silicon germanium carbon (SiGeC), silicon carbide (SiC), germanium (Ge) alloys, III / V compound semiconductors, II / VI compound semiconductors, and / or other materials. In some embodiments, substrate layer 102 may include a layered semiconductor, including but not limited to silicon / silicon germanium (Si / SiGe), silicon / silicon carbide (Si / SiC), silicon on insulator (SOI), silicon germanium on insulator (SGOI), and / or other layered semiconductors. Substrate layer 102 may include a thickness ranging from about 200 micrometers (μm) to about 750 μm.

[0046] The device 100 may also include a first III-V semiconductor compound layer 104 (referred to herein as first III-V layer 104) formed on the substrate layer 102. The first III-V layer 104 may include a III-V semiconductor compound, including but not limited to indium aluminum arsenide (InAlAs) and / or other III-V semiconductor compounds. The first III-V layer 104 may be formed on the substrate 102 using one or more deposition processes, including but not limited to PVD, CVD, ALD, PECVD, spin coating, sputtering, and / or other deposition processes. In one embodiment, the first III-V layer 104 may include a buffer layer. In another embodiment, the first III-V layer 104 may include a thickness (e.g., height) ranging from about 200 nanometers (nm) to about 2 μm.

[0047] The device 100 may also include one or more additional III-V semiconductor compound layers, which may include one or more epitaxial films formed (e.g., grown) on the first III-V family layer 104. For example, the device 100 may include a second III-V semiconductor compound layer 106 (referred to herein as the second III-V family layer 106) formed on the first III-V family layer 104. In this example, the second III-V family layer 106 may include a III-V semiconductor compound including an epitaxial film including, but not limited to, indium gallium arsenide (InGaAs) and / or other epitaxial films. In one embodiment, the second III-V family layer 106 may include a protective layer.

[0048] In another example, the device 100 may include a third III-V semiconductor compound layer 108 (referred to herein as the third III-V layer 108) formed on the second III-V layer 106. In this example, the third III-V layer 108 may include a III-V semiconductor compound including an epitaxial film including, but not limited to, indium arsenide (InAs) and / or other epitaxial films.

[0049] In another example, device 100 may include a fourth III-V semiconductor compound layer 110 (referred to herein as fourth III-V layer 110) formed on third III-V layer 108. In this example, fourth III-V layer 110 may include a III-V semiconductor compound including an epitaxial film including, but not limited to, indium gallium arsenide (InGaAs) and / or other epitaxial films. In one embodiment, fourth III-V layer 110 may include a protective layer.

[0050] An epitaxial film growth process (e.g., epitaxial deposition) performed in an epitaxial growth furnace may be used to grow the second III-V family layer 106, the third III-V family layer 108, and / or the fourth III-V family layer 110, which may include epitaxial films, as defined above, on the first III-V family layer 104. For example, during the same manufacturing stage, the second III-V family layer 106, the third III-V family layer 108, and / or the fourth III-V family layer 110 may be grown together in situ on the first III-V family layer 104 (e.g., in situ epitaxial film growth performed in an epitaxial growth furnace). Utilizing such an in-situ epitaxial film growth process to grow the second III-V family layer 106, the third III-V family layer 108, and / or the fourth III-V family layer 110 on the first III-V family layer 104 in such a manner can facilitate the desired crystallinity of each layer (film), as well as prevent oxidation and / or defects at the interface between each of such layers (e.g., at the interface between the second III-V family layer 106, the third III-V family layer 108, and / or the fourth III-V family layer 110) and / or at the interface between the first III-V family layer 104 and the second III-V family layer 106.

[0051] The second III-V family layer 106, the third III-V family layer 108, and / or the fourth III-V family layer 110 defined above can be formed as one or more semiconductor nanorods comprising one or more quantum wells of a Majorana fermion device as described below, wherein the third III-V family layer 108 can include an active layer. For example, the second III-V family layer 106, the third III-V family layer 108, and / or the fourth III-V family layer 110 can be formed as one or more ion-implanted nanorods of a Majorana fermion device suspended in a semiconductor device, wherein the third III-V family layer 108 can include an active layer. For example, the second III-V family layer 106, the third III-V family layer 108, and / or the fourth III-V family layer 110 can be formed as described below and in Figure 22A and 22B One or more ion implantation-defined nanorods 406 are shown in the Majorana fermion device 2206 , where the third III-V family layer 108 may comprise an active layer.

[0052] A first III-V family layer 104 (epitaxial semiconductor) can be epitaxially grown on substrate layer 102. The material for first III-V family layer 104 can be selected based on the composition of substrate layer 102 and second III-V family layer 106. In one embodiment, first III-V family layer 104 is formed of indium aluminum arsenide (InAlAs) to match the lattice of adjacent second III-V family layer 106. In one embodiment, the composition of first III-V family layer 104 gradually changes from substrate layer 102 to second III-V family layer 106 to avoid the generation of crystal defects (e.g., dislocations) in second III-V family layer 106. In one embodiment, the gradual change in composition is a linear change. For example, if substrate layer 102 includes gallium arsenide (GaAs) and second III-V family layer 106 includes indium arsenide (InAs), it is difficult to grow a sufficiently high-quality InAs layer directly on the GaAs of substrate layer 102. Thus, the first III-V family layer 104 begins at the substrate layer 102 with GaAs, and the gallium is gradually replaced by indium to ultimately match the InAs of the second III-V family layer 106. These examples of materials are not intended to be limiting. In light of this disclosure, one of ordinary skill in the art will be able to envision many other materials suitable for forming the first III-V family layer 104, and such materials are contemplated within the scope of the exemplary embodiments.

[0053] The second III-V family layer 106 (epitaxial semiconductor) can be epitaxially grown on the first III-V family layer 104. The materials for the second III-V family layer 106 and the fourth III-V family layer 110 are selected based on the composition of the third III-V family layer 108 to provide a crystal quality above a certain quality threshold. In one embodiment, InAs is used for the third III-V family layer 108 in a one-to-one ratio, and indium gallium arsenide (InGaAs) is used for the second III-V family layer 106 and the fourth III-V family layer 110 in a ratio of 0.8 In to 1 Ga to 0.2 As. In one embodiment, indium gallium arsenide (InGaAs) is used for the third III-V family layer 108 in a ratio of 0.7 In to 1 Ga to 0.3 As, and indium gallium arsenide (InGaAs) is used for the second III-V family layer 106 and the fourth III-V family layer 110 in a ratio of 0.53 In to 1 Ga to 0.47 As or 0.52 In to 1 Ga to 0.48 As. In one embodiment, indium antimonide (InSb) is used for the third III-V family layer 108, and In0.80-0.90Al0.1-0.2Sb (indium aluminum antimonide (InAlSb) using a ratio of 1 In to 0.8-0.9 Al to 0.1-0.2 Sb) is used for the second III-V family layer 106 and the fourth III-V family layer 110. In one embodiment, indium phosphide (InP) is used as the substrate, and the second III-V family layer 106 is lattice matched to the InP of the substrate layer 102. However, the second III-V family layer 106 and the fourth III-V family layer 110 can be formed using the same material or different materials. Moreover, in some embodiments, the fourth III-V family layer 110 is not formed. These examples of materials are not intended to be limiting. Based on this disclosure, one of ordinary skill in the art will be able to envision many other materials suitable for forming the second III-V family layer 106 and the fourth III-V family layer 110, and these materials are envisioned within the scope of the illustrative embodiments. In one embodiment, the second III-V family layer 106 is approximately 4 nm thick, although thicker or thinner layers are possible and contemplated within the scope of the exemplary embodiments.

[0054] The third III-V family layer 108 can be epitaxially grown on the second III-V family layer 106. In one embodiment, the third III-V family layer 108 is formed of indium arsenide (InAs) using a one-to-one In:As ratio, indium gallium arsenide (InGaAs) using a ratio of 0.7In to 1Ga to 0.3As, or indium antimonide (InSb). These examples of substrate materials are not intended to be limiting. In light of this disclosure, one of ordinary skill in the art will be able to identify many other materials suitable for forming the substrate layer 102, and they are also contemplated within the scope of the illustrative embodiments. In one embodiment, the third III-V family layer 108 is approximately 7 nm thick, but thicker or thinner layers are possible and contemplated within the scope of the exemplary embodiments.

[0055] A fourth III-V family layer 110 (epitaxial semiconductor) can be epitaxially grown on the third III-V family layer 108. In one embodiment, the fourth III-V family layer 110 is approximately 5 nm thick, but thicker or thinner layers are possible and contemplated within the scope of exemplary embodiments. The second III-V family layer 106 and the fourth III-V family layer 110 protect the surface of the third III-V family layer 108 from damage during manufacturing. Damaged portions of the third III-V family layer 108 can degrade device characteristics. Thus, if the risk of damage during manufacturing is sufficiently low, the fourth III-V family layer 110 may not be formed on the third III-V family layer 108. Furthermore, the second III-V family layer 106 and the fourth III-V family layer 110 can be the same material or different materials.

[0056] Figure 2 FIG. 1 shows a schematic diagram of a Majorana fermion device after forming a superconducting layer to form a Majorana fermion device according to one or more embodiments described herein. Figure 1 1 is a cross-sectional side view of an example non-limiting device 100. For the sake of brevity, repeated descriptions of similar elements and / or processes employed in other embodiments described herein are omitted.

[0057] Device 200 may include an example, non-limiting alternative embodiment of device 100 after forming a superconducting layer 202. Superconducting layer 202 may include one or more superconducting materials, including but not limited to aluminum (AL) and / or other superconducting materials. In one embodiment, superconducting layer 202 may include a thickness (e.g., height) ranging from about 5 nm to about 50 nm.

[0058] Superconducting layer 202 may be formed (e.g., grown) on fourth III-V family layer 110 using an epitaxial film growth process (e.g., epitaxial deposition) performed in an epitaxial growth furnace. In one embodiment, superconducting layer 202 may be grown on fourth III-V family layer 110 using the same epitaxial film growth process performed in the same epitaxial growth furnace that may be used to grow second III-V family layer 106, third III-V family layer 108, and / or fourth III-V family layer 110, as described above. For example, second III-V family layer 106, third III-V family layer 108, fourth III-V family layer 110, and / or superconducting layer 202 may be grown together in situ during the same manufacturing stage (e.g., in situ epitaxial film growth performed in an epitaxial growth furnace). Utilizing such an in-situ epitaxial film growth process to grow the second III-V family layer 106, the third III-V family layer 108, the fourth III-V family layer 110, and / or the superconducting layer 202 in such a manner can facilitate the desired crystallinity of each layer and prevent oxidation and / or defects at the interface between each of such layers (e.g., at the interface between the second III-V family layer 106, the third III-V family layer 108, and / or the fourth III-V family layer 110) and / or at the interface between the fourth III-V family layer 110 and the superconducting layer 202.

[0059] As described above, the second III-V family layer 106, the third III-V family layer 108, and / or the fourth III-V family layer 110 may be formed into one or more semiconductor nanorods of a Majorana fermion device (e.g., formed into the nanorods described below and described in Figure 22A and 22B 2 and 3). FIGURE 2 illustrates an example of a Majorana fermion device 2206 shown in FIGURE 2. The formation of the superconducting layer 202 on the fourth III-V family layer 110 may provide for the formation of a superconducting material on such one or more semiconductor nanorods, which may enable observation of one or more Majorana fermion behaviors and / or properties at the interface of the superconducting layer 202 and the fourth III-V family layer 110.

[0060] Figure 3A shows a structure after forming a resist layer according to one or more embodiments described herein. Figure 2 A top view of a first side of an example non-limiting device 200. In one example, the first side of the device 200 may include Figure 3A , which may include a top side of the device 300 . Figure 3B A cross-sectional side view of the device 300 is shown as viewed along a plane defined by line 302. For the sake of brevity, repeated descriptions of similar elements and / or processes employed in other embodiments described herein are omitted.

[0061] Device 300 may include an example, non-limiting alternative embodiment of device 200 after forming a first resist layer 304. First resist layer 304 may include a photoresist material that may be formed on superconducting layer 202 using one or more photolithography, patterning, and / or photoresist techniques (e.g., a photolithography patterning process) as defined above. First resist layer 304 may include a photoresist including, but not limited to, positive-tone photoresist, negative-tone photoresist, mixed-tone photoresist, and / or other photoresists.

[0062] The first resist layer 304 may include a pattern resist that can be used to define regions of the device 300 that can be developed into a Majorana fermion device and / or one or more components thereof. For example, the first resist layer 304 may include a pattern resist that can be used as an ion implantation mask to define superconductor regions and / or quantum well regions for Majorana nanowires (e.g., nanorods) and / or quantum dots, as well as regions for semiconductor links between quantum dots (e.g., as described below).

[0063] In one example, the first resist layer 304 may be used as an ion implantation mask to define Figure 3A Region 306 is shown in FIG. 306 , which comprises a “U” shaped region of device 300 that can be developed into a Majorana fermion device comprising one or more ion implantation defined nanorods and / or one or more ion implantation defined sensing regions. In this example, “U” shaped region 306 can include one or more sub-regions 308 that can be formed such that they are aligned along the Figure 3A 302 (e.g., parallel to the plane defined by line 302), wherein such sub-region 308 can be developed into one or more ion-implanted nanorods defined by Majorana fermion devices (e.g., one or more ion-implanted nanorods 406 of Majorana fermion device 2206). In these examples, the "U"-shaped region 306 can also include a sub-region 310, which can be formed such that it extends perpendicular to the plane defined by line 302. Figure 3A , wherein such a sub-region 310 can be developed into one or more ion-implantation-defined sensing regions of a Majorana fermion device including one or more quantum dots (e.g., one or more ion-implantation-defined sensing regions 408 of the Majorana fermion device 2206).

[0064] Although Figure 3ARegion 306 is described in a "U" shaped configuration, but it should be understood that the various embodiments of the present disclosure described herein are not limited to this. For example, region 306 may include various different configurations (e.g., "E", "F", "H", "K", "L", "T", etc.) that can be used to define a Majorana fermion device and / or one or more components thereof, as described above according to one or more embodiments described herein. Additionally or alternatively, although the "U" shaped configuration of region 306 can produce two (2) such ion-implantation-defined nanorods and one (1) such ion-implantation-defined sensing region, it should be understood that the various embodiments of the present disclosure described herein are not limited to this. For example, using different configurations to form region 306 can produce various numbers of such ion-implantation-defined nanorods and / or such ion-implantation-defined sensing regions described above, respectively.

[0065] Figure 4A FIG. 1 shows a schematic diagram of a nanorod structure after performing an ion implantation process to form ion implantation-defined nanorods and an ion implantation-defined sensing region according to one or more embodiments described herein. Figure 3A and 3B A top view of a first side of an example non-limiting device 300. In one example, the first side of the device 300 may include Figure 4A 4. A first side of the device 400 is shown in FIG. 4, which may include a top side of the device 400. Figure 4B A cross-sectional side view of the device 400 is shown as viewed along a plane defined by line 402. For the sake of brevity, repeated descriptions of similar elements and / or processes employed in other embodiments described herein are omitted.

[0066] The apparatus 400 may include performing an ion implantation process to form Figure 4A and 4B An exemplary, non-limiting alternative embodiment of the device 300 is shown following the ion implantation region 404, thereby facilitating the definition of one or more circuit regions of the device 400. For example, an ion implantation process can be performed to implant low-dose ions into the second III-V family layer 106, the third III-V family layer 108, and / or the fourth III-V family layer 110 to define a circuit region of a Majorana fermion device (e.g., Majorana fermion device 2206). For example, an ion implantation process can be performed to implant low-dose ions, including, but not limited to, helium (He), hydrogen (H2), oxygen (O2), argon (Ar), gallium (Ga), and / or other ions, into the second III-V family layer 106, the third III-V family layer 108, and / or the fourth III-V family layer 110 to define one or more ion-implanted nanorods including one or more quantum dots as described above and / or one or more ion-implanted sensing regions.

[0067] The ion implantation process described above can be used to define such a circuit region of a Majorana fermion device (e.g., Majorana fermion device 2206) because the ion implantation deactivates the conductivity of the III-V semiconductor compound material (e.g., by destroying the crystal structure of the III-V semiconductor compound material), thereby effectively making such a material an insulator. Based on using the "U"-shaped first resist layer 304 to perform such an ion implantation process as described above to define the region 306, it is possible to Figure 4A The sub-area 308 shown is defined Figure 4B Additionally or alternatively, based on performing such an ion implantation process using a "U" shaped first resist layer 304 to define the region 306, it is possible to Figure 4A The sub-area 310 shown in FIG is defined in Figure 4B An ion implantation-defined sensing region 408 is shown as a dashed line in FIG. 4 , wherein such an ion implantation-defined sensing region 408 may include one or more quantum dots.

[0068] For example, the ion implantation defined nanorods 406 may include portions of the second III-V family layer 106, the third III-V family layer 108, and / or the fourth III-V family layer 110. Figure 4B 308. In this example, since such regions of the second III-V family layer 106, the third III-V family layer 108, and / or the fourth III-V family layer 110 will remain conductive after ion implantation of all other regions of the device 400, they can be defined as circuit regions of the Majorana fermion device. In another example, the sensing region 408 defined by the ion implantation can include portions of the second III-V family layer 106, the third III-V family layer 108, and / or the fourth III-V family layer 110 that are within the device 400. Figure 4B 310. In this example, since such regions of the second III-V family layer 106, the third III-V family layer 108, and / or the fourth III-V family layer 110 will remain conductive after ion implantation of all other regions of the device 400, they can be defined as circuit regions of the Majorana fermion device. In the examples provided above, the ion implantation-defined nanorods 406 and / or the ion implantation-defined sensing region 408 can be defined as circuit regions of the Majorana fermion device because performing such an ion implantation process can enable the nanorods 406 to be electrically conductive as described above. Figure 4A and 4BThe conductivity of the second III-V family layer 106, the third III-V family layer 108 and / or the fourth III-V family layer 110 in all areas of the ion implantation shown in the ion implantation region 404 is deactivated (e.g., by destroying their crystal structure), because such ion implantation region 404 has dielectric properties after the ion implantation is performed.

[0069] Performing the above-described ion implantation process can effectively produce an ion implantation region 404 coupled to the superconducting layer 202, the ion implantation-defined nanorods 406, and / or the ion implantation-defined sensing region 408, which may comprise components of a Majorana fermion device. Such formation of the ion implantation region 404 coupled to the superconducting layer 202, the ion implantation-defined nanorods 406, and / or the ion implantation-defined sensing region 408 can enable the suspension of a Majorana fermion device in a quantum computing device. For example, referring to Figure 22A and 22B The formation of the ion implantation region 404 coupled to the superconducting layer 202, the ion implantation-defined nanorods 406, and / or the ion implantation-defined sensing region 408 may enable suspension of the Majorana fermion device 2206 in the device 2200 after removal of a portion of the encapsulating film 1404 as described below.

[0070] Utilizing such an ion implantation process can prevent damage to the materials of device 400 that may be caused by using other techniques to define such circuit regions, such as reactive ion etching (RIE) and / or cleaning processes. For example, such an ion implantation process can prevent damage to the second III-V family layer 106, the third III-V family layer 108, and / or the fourth III-V family layer 110, including the ion implanted nanorods 406 and / or the ion implanted sensing region 408. In this example, such an ion implantation process can also prevent damage to superconducting layer 202.

[0071] In one embodiment, subregion 308 and / or ion implantation-defined nanorods 406 may each comprise a length ranging from about 20 nm to about 1,000 nm and / or a width ranging from about 5 nm to about 200 nm. In another embodiment, subregion 310 and / or ion implantation-defined sensing region 408 may each comprise a length ranging from about 20 nm to about 1,000 nm and / or a width ranging from about 5 nm to about 200 nm.

[0072] Figure 5A shows a schematic diagram of a superconducting layer after performing a wet etching process to remove portions of the superconducting layer according to one or more embodiments described herein. Figure 4A and 4B A top view of a first side of an example non-limiting device 400. In one example, the first side of the device 400 may include Figure 5A, which may include a top side of the device 500 . Figure 5B A cross-sectional side view of the device 500 is shown as viewed along a plane defined by line 502. For the sake of brevity, repeated descriptions of similar elements and / or processes employed in other embodiments described herein are omitted.

[0073] The apparatus 500 may include an example non-limiting alternative embodiment of the apparatus 400 after performing a wet etching process on the superconducting layer 202 to remove all portions of the superconducting layer 202 except for portions remaining under the first resist layer 304, as shown in FIG. Figure 5A and 5B For example, a wet etching process using tetramethylammonium hydroxide (TMAH) can be performed to remove such portions of the superconducting layer 202 , thereby facilitating alignment of the superconducting layer 202 over the ion-implanted nanorods 406 and / or the ion-implanted sensing region 408 .

[0074] Figure 6A FIG. 1 shows a first resist layer after forming a second resist layer on and / or around the first resist layer according to one or more embodiments described herein. Figure 5A and 5B A top view of a first side of an example non-limiting device 500. In one example, the first side of the device 500 may include Figure 6A , which may include a top side of the device 600 . Figure 6B A cross-sectional side view of the device 600 is shown as viewed along a plane defined by line 602. For the sake of brevity, repeated descriptions of similar elements and / or processes employed in other embodiments described herein are omitted.

[0075] The apparatus 600 may include an example non-limiting alternative embodiment of the apparatus 500 after forming a second resist layer 604 on and / or around the first resist layer 304, such as Figure 6A and 6B The second resist layer 604 may include one or more of the photoresist materials defined above, which may be formed on and / or around the first resist layer 304 using one or more photolithography, patterning, and / or photoresist techniques (e.g., a photolithography patterning process) as defined above. Figure 6A and 6B shown.

[0076] The second resist layer 604 may include a pattern resist, which may be used to pattern Figure 6A, which defines a portion of superconducting layer 202 that will be removed to enable one or more control gates to be formed vertically across ion-implanted nanorods 406. In some embodiments (not shown), for example, embodiments employing a bonding method, second resist layer 604 is not applied.

[0077] The openings 606 defined by the second resist layer 604 can enable the removal of portions of the superconducting layer 202 from one side (e.g., the surface) of each ion-implanted nanorod 406, thereby exposing such a side of each ion-implanted nanorod 406 while leaving all other portions of the superconducting layer 202 undisturbed (e.g., maintaining portions of the superconducting layer 202 coupled (e.g., communicatively, electrically, operatively, optically, physically, etc.) to the ion-implanted nanorod 406). The openings 606 defined by the second resist layer 604 can enable the removal of the superconducting layer 202 described above and described in Figure 6A 202 to enable the formation of one or more control gates (e.g., described below and in Figure 22A and 22B 1206b) so that a voltage can be applied to the ion-implantation-defined nanorods 406 that are not blocked by the superconducting layer 202 (e.g., the electric field will not be shielded by the superconducting layer 202). Such a voltage can be applied to the ion-implantation-defined nanorods 406 to adjust the potential of the ion-implantation-defined nanorods 406.

[0078] Figure 7A FIG. 1 shows a structure of a nanorod after performing a wet etching process to remove portions of the superconducting layer from the nanorods defined by ion implantation and after stripping the first and second resist layers according to one or more embodiments described herein. Figure 6A and 6B A top view of a first side of an example non-limiting device 600. In one example, the first side of the device 600 may include Figure 7A A first side of the device 700 is shown in , which may include a top side of the device 700 . Figure 7B A cross-sectional side view of the device 700 is shown as viewed along a plane defined by line 702. For the sake of brevity, repeated descriptions of similar elements and / or processes employed in other embodiments described herein are omitted.

[0079] Apparatus 700 may include an example non-limiting alternative embodiment of apparatus 600 after performing a wet etching process to remove portions of superconducting layer 202 from ion implantation-defined nanorods 406 as described above and after stripping first and second resist layers 304 and 604 .

[0080] In one example, a wet etching process using tetramethylammonium hydroxide (TMAH) can be performed to remove portions of the superconducting layer 202 from the ion-implanted defined nanorods 406, thereby exposing a surface of each ion-implanted defined nanorod 406 to which the one or more control gates can be coupled (e.g., as described below and in Figure 22A and 22B For example, a wet etching process using TMAH may be performed to remove such portions of the superconducting layer 202 from the nanorods 406 defined by the ion implantation, thereby Figure 7A The surface of the fourth III-V family layer 110 in each of the ion-implanted nanorods 406 is shown exposed, wherein the one or more control gates described above can be coupled to such a surface of the fourth III-V family layer 110 in one or two of the ion-implanted nanorods 406. Upon performing such a wet etching process, an organic solvent can be used to strip (e.g., remove and / or rinse away) the first resist layer 304 and the second resist layer 604.

[0081] Figure 8A shows a structure after forming a resist layer according to one or more embodiments described herein. Figure 7A and Figure 7B A top view of a first side of an example non-limiting device 700 is shown. In one example, the first side of the device 700 may include Figure 8A 800 , which may include a top side of the device 800 . Figure 8B A cross-sectional side view of device 800 is shown, viewed along a plane defined by line 802. For the sake of brevity, repeated descriptions of similar elements and / or processes employed in other embodiments described herein are omitted.

[0082] The device 800 may include an example non-limiting alternative embodiment of the device 700 after forming a resist layer, which may include the first resist layer 304, on portions of the device 700, such as Figure 8A and 8B As shown. The first resist layer 304 may include one or more of the above-defined photoresist materials that can be formed using one or more of the above-defined photolithography, patterning, and / or photoresist techniques (e.g., photolithography patterning processes). The first resist layer 304 may include a pattern resist that can be used to pattern Figure 8A , which defines a portion of the superconducting layer 202 that will be removed from the fourth III-V family layer 110, thereby enabling further development of the ion implantation defined sensing region 408 by exposing a surface (e.g., a top surface) of the ion implantation defined sensing region 408.

[0083] Figure 9A FIG. 1 shows a semiconductor layer after performing a wet etching process to remove portions of the superconducting layer according to one or more embodiments described herein. Figure 8A and 8B A top view of a first side of an example non-limiting device 800 is shown. In one example, the first side of the device 800 may include Figure 9A The first side of the device 900 shown in FIG. 9 may include the top side of the device 900 . Figure 9B A cross-sectional side view of the device 900 is shown as viewed along a plane defined by line 902. For the sake of brevity, repeated descriptions of similar elements and / or processes employed in other embodiments described herein are omitted.

[0084] The apparatus 900 may include an example non-limiting alternative embodiment of the apparatus 800 after performing a wet etching process to remove a portion of the superconducting layer 202 from the fourth III-V family layer 110, such as Figure 8A 、 8B , 9A and 9B. Removing such portions of the superconducting layer 202 from the fourth III-V family layer 110 can enable further development of the ion implantation-defined sensing region 408 as described below. In one example, a wet etching process using TMAH can be performed to remove these portions of the superconducting layer 202 from the fourth III-V family layer 110.

[0085] Figure 10A shows the structure of the substrate after stripping the resist layer according to one or more embodiments described herein. Figure 9A and 9B A top view of a first side of an example non-limiting device 900 is shown. In one example, the first side of the device 900 may include Figure 10A , which may include a top side of the device 1000 . Figure 10B A cross-sectional side view of device 1000 is shown as viewed along a plane defined by line 1002. For the sake of brevity, repeated descriptions of similar elements and / or processes employed in other embodiments described herein are omitted.

[0086] The apparatus 1000 may include an example non-limiting alternative embodiment of the apparatus 900 after stripping the first resist layer 304. In one example, the first resist layer 304 may be stripped (eg, removed and / or rinsed away) using an organic solvent.

[0087] Figure 11A shows a structure after forming a resist layer according to one or more embodiments described herein. Figure 10A and Figure 10BA top view of a first side of an example non-limiting device 1000. In one example, the first side of the device 1000 may include Figure 11A 1100 , which may include a top side of the device 1100 . Figure 11B A cross-sectional side view of the device 1100 is shown as viewed along a plane defined by line 1102. For the sake of brevity, repeated descriptions of similar elements and / or processes employed in other embodiments described herein are omitted.

[0088] The device 1100 may include, for example, an example non-limiting alternative embodiment of the device 1000 after forming a resist layer, which may include the first resist layer 304, on portions of the device 1000, such as Figure 11A and 11B As shown. The first resist layer 304 may include one or more of the above-defined photoresist materials that can be formed using one or more of the above-defined photolithography, patterning, and / or photoresist techniques (e.g., a photolithography patterning process). The first resist layer 304 may include a pattern resist that can be used to pattern one or more openings 1104, such as Figure 11A and 11B As shown, the opening 1104 defines an area of ​​the device 1100 to which one or more contact gates (e.g., electrical contacts) may be coupled (e.g., communicatively, electrically, operatively, optically, physically, etc.). For example, the first resist layer 304 may include a pattern resist that can be used to pattern the one or more openings 1104, e.g., Figure 11A and 11B As shown, openings 1104 define regions on one or more surfaces (e.g., top surfaces) of the ion-implanted nanorods 406 and / or the ion-implanted sensing region 408, to which one or more contact gates may be coupled. In one example, the first resist layer 304 may include a lift-off structure having an undercut profile, wherein a metal may be evaporated onto such a lift-off structure to enable formation of the one or more contact gates.

[0089] Figure 12A FIG. 1 shows a schematic diagram of a circuit diagram of a circuit after depositing a metal layer to form one or more wirings according to one or more embodiments described herein. Figure 11A and 11B A top view of a first side of an example non-limiting device 1100. In one example, the first side of the device 1100 may include Figure 12A 1200 , which may include a top side of the device 1200 . Figure 12BA cross-sectional side view of the device 1200 is shown as viewed along a plane defined by line 1202. For the sake of brevity, repeated descriptions of similar elements and / or processes employed in other embodiments described herein are omitted.

[0090] Device 1200 may include an example non-limiting alternative embodiment of device 1100 after the following steps: cleaning the surfaces (e.g., the top surface) of the fourth III-V family layer 110 and the superconducting layer 202; depositing a metal layer 1204 on the device 1100; and / or rinsing the device 1100 with a solvent, thereby forming one or more wirings 1206 coupled to one or more surfaces of the device 1100. For example, the device 1200 may include an example non-limiting alternative embodiment of the device 1100 after the following steps: cleaning the top surfaces of the fourth III-V family layer 110 and the superconducting layer 202; depositing a metal layer 1204 on the top surface of the fourth III-V family layer 110 (e.g., the top surface of the ion implantation-defined nanorods 406 and / or the top surface of the ion implantation-defined sensing region 408) using a metal evaporation process; and / or rinsing the device 1100 with an organic solvent to form one or more wires 1206 coupled to the top surface of the fourth III-V family layer 110 (e.g., the top surface of the ion implantation-defined nanorods 406 and / or the top surface of the ion implantation-defined sensing region 408). The metal layer 1204 may be formed such that the wires 1206 may include a thickness (e.g., a height) ranging from about 5 nm to about 100 nm and / or a width ranging from about 5 nm to about 50 nm. As described below with reference to Figure 22A 、 22B As described in conjunction with FIG. 24 , the wiring 1206 may include wirings 1206 a , 1206 b that may be coupled to the Majorana fermion device 2206 and one or more conductive features in a supporting region 2402 on the device 2400 , where the device 2400 may include a quantum computing device.

[0091] The metal layer 1204 and / or the one or more wires 1206 may include conductive features through which current (e.g., alternating current and / or direct current), electrical signals (e.g., microwave frequency signals, etc.), and / or optical signals may flow. The metal layer 1204 and / or the one or more wires 1206 may be deposited (e.g., via a metal evaporation process) on the first resist layer 304, the fourth III-V family layer 110, and / or the superconducting layer 202 of the device 1100 using one or more materials including, but not limited to, aluminum (Al), copper, copper alloys (e.g., copper-nickel), gold, platinum, palladium, gold alloys (e.g., gold-palladium), brass, and / or any other conductive metal or alloy. In one example, the one or more wires 1206 may include one or more conductive features including, but not limited to, control wires, tunnel junction gates, pinch gates, chemical potential control gates, sensing wires, semiconductor connectors, electrodes, circuit wires, contacts, and / or other conductive features.

[0092] Figure 13A shows a structure after removing the resist layer and / or the metal layer according to one or more embodiments described herein. Figure 12A and 12B A top view of a first side of an example non-limiting device 1200. In one example, the first side of the device 1200 may include Figure 13A 1300 , which may include a top side of the device 1300 . Figure 13B A cross-sectional side view of device 1300 is shown as viewed along a plane defined by line 1302. For the sake of brevity, repeated descriptions of similar elements and / or processes employed in other embodiments described herein are omitted.

[0093] The device 1300 may include an example non-limiting alternative embodiment of the device 1200 after the device 1200 is rinsed with a solvent to remove the first resist layer 304 and / or the metal layer 1204. For example, the device 1300 may include an example non-limiting alternative embodiment of the device 1200 after the device 1200 is rinsed with an organic solvent to remove the first resist layer 304 (e.g., a lift-off structure previously formed using the first resist layer 304) and / or the metal layer 1204. Removal of such layers may produce the device 1300 including one or more wires 1206 coupled to the top surface of the fourth III-V family layer 110 (e.g., coupled to the top surface of the ion-implantation-defined nanorods 406 and / or the ion-implantation-defined sensing region 408), as shown. Figure 13A and 13B shown.

[0094] Figure 14A FIG. 1 shows a schematic diagram of a packaging film after forming the packaging film according to one or more embodiments described herein. Figure 13A and 13BA top view of a first side of an example non-limiting device 1300. In one example, the first side of the device 1300 may include Figure 14A 1400 , which may include a top side of the device 1400 . Figure 14B A cross-sectional side view of device 1400 is shown as viewed along a plane defined by line 1402. For the sake of brevity, repeated descriptions of similar elements and / or processes employed in other embodiments described herein are omitted.

[0095] Device 1400 may include an example, non-limiting alternative embodiment of device 1300 after forming packaging film 1404. In one example, packaging film 1404 may be formed on device 1300 using one or more of the material deposition techniques defined above (e.g., evaporation, sputtering, chemical vapor deposition (CVD), atomic layer deposition (ALD), physical vapor deposition (PVD), molecular beam epitaxy (MBE), electrochemical deposition (ECD), etc.). In another example, packaging film 1404 may be formed on device 1300 using an assembly process (e.g., a packaging process, a sealing process, etc.) capable of packaging an integrated circuit (e.g., a semiconductor device).

[0096] The formation of the encapsulation film 1404 on the device 1300 can enable coupling of the encapsulation film 1404 to one or more elements (e.g., layers, films, components, etc.) of the device 1300. For example, the formation of the encapsulation film 1404 on the device 1300 can enable coupling of the encapsulation film 1404 to the ion implantation region 404, which can be coupled to the superconducting layer 202, the ion implantation-defined nanorods 406, and / or the ion implantation-defined sensing region 408, which can include components of a Majorana fermion device as described above. In this example, such formation of the encapsulation film 1404 coupled to the ion implantation region 404 can enable suspension of a Majorana fermion device in a quantum computing device. For example, referring to Figure 22A and 22B Such formation of the encapsulation film 1404 coupled to the ion implantation region 404 can enable the Majorana fermion device 2206 to be suspended in the device 2200 after removing a portion of the encapsulation film 1404 as described below.

[0097] The formation of encapsulation film 1404 on device 1300 may enable flipping device 1400 to access a second side of device 1400. For example, the formation of encapsulation film 1404 on device 1300 may enable flipping device 1400 to access a bottom side of device 1400 to form one or more additional contact gates (e.g., one or more wirings 1206) on such bottom side of device 1400, as described below.

[0098] The packaging film 1404 may include one or more materials, including but not limited to germanium (Ge), silicon germanium (SiGe), oxides, tungsten oxide, silicon dioxide (SiO2), gallium arsenide (GaAs) and / or other materials. In one example (not shown in the figure), the packaging film 1404 may include a multi-layer packaging film. For example, the packaging film 1404 may include an atomic layer deposition (ALD) film and an amorphous layer. In another example, the packaging film 1404 may include one or more of the materials defined above and / or other materials that can be formed on the device 1300 to achieve such flipping of the device 1400 as described above and / or can be further removed using an aqueous solution.

[0099] Figure 15A FIG. 1 shows a schematic diagram of a second substrate layer after bonding the second substrate layer to the packaging film according to one or more embodiments described herein. Figure 14A and 14B A top view of a first side of an example non-limiting device 1400. In one example, the first side of the device 1400 may include Figure 15A 1500 , which may include a top side of the device 1500 . Figure 15B A cross-sectional side view of device 1500 is shown as viewed along a plane defined by line 1502. For the sake of brevity, repeated descriptions of similar elements and / or processes employed in other embodiments described herein are omitted.

[0100] The device 1500 may include example non-limiting alternative embodiments of the device 1400 after planarizing the encapsulation film 1404 and / or bonding the second substrate layer 1504 to the encapsulation film 1404. For example, the device 1500 may include example non-limiting alternative embodiments of the device 1400 after performing chemical mechanical planarization (CMP) to planarize the encapsulation film 1404 and / or bonding the second substrate layer 1504 to the encapsulation film 1404 using a wafer bonding process (e.g., direct bonding, plasma activated bonding, anodic bonding, eutectic bonding, glass frit bonding, adhesive bonding, thermocompression bonding, transient liquid phase diffusion bonding, surface activated bonding, etc.).

[0101] In one embodiment, the second substrate layer 1504 may include one or more of the same materials as the substrate layer 102 defined above (e.g., Si, Al2O3, SiGe, SiGeC, SiC, Ge alloys, III / V compound semiconductors, II / VI compound semiconductors, etc.). The second substrate layer 1504 may include a thickness ranging from about 200 μm to about 750 μm.

[0102] Figure 16A shows the substrate layer after removal according to one or more embodiments described herein. Figure 15A and 15B A top view of a first side of an example non-limiting device 1500. In one example, the first side of the device 1500 may include Figure 16A 1600 , which may include a top side of the device 1600 . Figure 16B A cross-sectional side view of device 1600 is shown as viewed along a plane defined by line 1602. For the sake of brevity, repeated descriptions of similar elements and / or processes employed in other embodiments described herein are omitted.

[0103] The apparatus 1600 may include the example non-limiting alternative embodiment of the apparatus 1500 after removing the substrate layer 102. For example, the apparatus 1600 may include the example non-limiting alternative embodiment of the apparatus 1500 after separating the substrate layer 102 from the first III-V family layer 104 using one or more material removal techniques defined above (e.g., CMP, etching, back grinding, etc.).

[0104] Figure 17A shows the structure after removing the semiconducting layer according to one or more embodiments described herein. Figure 16A and 16B A top view of a first side of an example non-limiting device 1600. In one example, the first side of the device 1600 may include Figure 17A A first side of device 1700 is shown, which may include a top side of device 1700 . Figure 17B A cross-sectional side view of device 1700 is shown as viewed along a plane defined by line 1702. For the sake of brevity, repeated descriptions of similar elements and / or processes employed in other embodiments described herein are omitted.

[0105] Device 1700 may include an example non-limiting alternative embodiment of device 1600 after removing first III-V family layer 104. For example, device 1700 may include an example non-limiting alternative embodiment of device 1600 after removing first III-V family layer 104 from second III-V family layer 106 using one or more material removal techniques defined above (e.g., CMP, etching, back grinding, etc.).

[0106] Figure 18A shows a process of spinning and forming a resist layer according to one or more embodiments described herein. Figure 17A and 17B A top view of a second side of an example non-limiting device 1700. In one example, the second side of the device 1700 may include Figure 18A , which may include a bottom side of device 1800 . Figure 18BA cross-sectional side view of device 1800 is shown as viewed along a plane defined by line 1802. For the sake of brevity, repeated descriptions of similar elements and / or processes employed in other embodiments described herein are omitted.

[0107] Device 1800 may include an example non-limiting alternative embodiment of device 1700 after flipping device 1700 (e.g., rotating 180 degrees about an axis perpendicular to the page) and forming a resist layer that may include first resist layer 304 on portions of device 1700, such as Figure 18A and 18B As shown. The first resist layer 304 may include one or more of the above-defined photoresist materials that may be formed using one or more of the above-defined photolithography, patterning, and / or photoresist techniques (e.g., a photolithography patterning process). The first resist layer 304 may include a pattern resist that may be used to pattern one or more openings 1804, such as Figure 18A and 18B As shown, the opening 1804 defines an area of ​​the device 1800 to which one or more contact gates (e.g., electrical contacts) and / or in some embodiments, an extended electrode layer can be coupled (e.g., communicatively, electrically, operatively, optically, physically, etc.). For example, the first resist layer 304 may include a pattern resist that can be used to pattern the one or more openings 1804, such as Figure 18A and 18B As shown, the opening 1804 defines an area on one or more surfaces (e.g., bottom surface) of the ion-implanted nanorods 406 and / or the ion-implanted sensing region 408, to which one or more contact gates and / or, in some embodiments, an extended electrode layer can be coupled. In one example, the first resist layer 304 can include a lift-off structure having an undercut profile, wherein a metal can be evaporated onto such a lift-off structure to achieve the formation of the one or more contact gates.

[0108] Figure 19A FIG. 1 shows a schematic diagram of a circuit diagram of a circuit after depositing a metal layer to form one or more wirings according to one or more embodiments described herein. Figure 18A and 18B A top view of a second side of an example non-limiting device 1800. In one example, the second side of the device 1800 may include Figure 19A , which may include a bottom side of the device 1900 . Figure 19B A cross-sectional side view of the device 1900 is shown as viewed along a plane defined by line 1902. For the sake of brevity, repeated descriptions of similar elements and / or processes employed in other embodiments described herein are omitted.

[0109] Device 1900 may include an example non-limiting alternative embodiment of device 1800 after: cleaning a surface (e.g., a bottom surface) of second III-V family layer 106; depositing a metal layer 1204 on device 1800; and / or rinsing device 1800 with a solvent, thereby forming one or more wirings 1206 coupled to one or more surfaces of device 1800 (e.g., in addition to one or more wirings 1206 formed on device 1200 as described above) and / or forming an extended electrode layer 1904 coupled to such one or more surfaces of device 1800 in some embodiments (e.g., forming extended electrode layer 1904 on device 1900 may be optional). Because forming extended electrode layer 1904 on device 1900 may be optional, for clarity, the following description is omitted. Figure 19B In one example, device 1900 can include a non-limiting alternative embodiment of device 1800 after the following steps: cleaning the bottom surface of second III-V family layer 106; depositing a metal layer 1204 on the bottom surface of second III-V family layer 106 (e.g., the bottom surface of ion-implantation-defined nanorods 406 and / or the bottom surface of ion-implantation-defined sensing region 408) using a metal evaporation process; and / or rinsing device 1800 with an organic solvent to form one or more wires 1206 and / or, in some embodiments, an extended electrode layer 1904 coupled to the bottom surface of second III-V family layer 106 (e.g., the bottom surface of ion-implantation-defined nanorods 406 and / or the bottom surface of ion-implantation-defined sensing region 408).

[0110] As described above, the metal layer 1204 and / or the one or more wires 1206 may include conductive features through which current (e.g., alternating current and / or direct current), electrical signals (e.g., microwave frequency signals, etc.), and / or optical signals may flow. The metal layer 1204 and / or the one or more wires 1206 may be deposited (e.g., via a metal evaporation process) onto the first resist layer 304 and / or the second III-V family layer 106 of the device 1100 using one or more materials including, but not limited to, aluminum (Al), copper, copper alloys (e.g., copper-nickel), gold, platinum, palladium, gold alloys (e.g., gold-palladium), brass, and / or any other conductive metal or alloy. In one example, the one or more wires 1206 may include one or more conductive features including, but not limited to, control wires, tunnel junction gates, pinch gates, chemical potential control gates, sensing wires, semiconductor connectors, electrodes, circuit wires, contacts, and / or other conductive features. The metal layer 1204 may be formed such that the wiring 1206 may include a thickness (e.g., height) ranging from about 5 nm to about 100 nm and / or a width ranging from about 5 nm to about 50 nm. In one embodiment, the metal layer 1204 may be formed such that the wiring 1206 may include a thickness (e.g., height) ranging from 20 nm to 50 nm.

[0111] In embodiments where the extended electrode layer 1904 is coupled to one or more surfaces (e.g., bottom surfaces) of the second III-V family layer 106 (e.g., the bottom surfaces of the ion-implantation-defined nanorods 406 and / or the ion-implantation-defined sensing region 408), the extended electrode layer 1904 can include a quasiparticle gettering structure that can repel undesirable quasiparticles from one or more components of the device 1900 (e.g., the ion-implantation-defined nanorods 406, the ion-implantation-defined sensing region 408, the Majorana fermion device 2206, etc.). For example, the extended electrode layer 1904 can include a quasiparticle gettering structure that can enable the application of an electric charge on the ion-implantation-defined nanorods 406, wherein such an electric charge can act as a barrier to repel quasiparticle electrons that can approach the ion-implantation-defined nanorods 406 and / or the ion-implantation-defined sensing region 408. The extended electrode layer 1904 can thereby facilitate reduced defects and / or improved lifetime of the ion-implanted confined nanorods 406 and / or the ion-implanted confined sensing region 408 by preventing quasiparticle electrons from migrating to the ion-implanted confined nanorods 406 and / or the ion-implanted confined sensing region 408 and quenching Majorana fermions (which can destroy its coherence). Since the extended electrode layer 1904 is optional, it is only shown for illustrative purposes. Figure 19A It should be understood that the present disclosure according to one or more embodiments described herein is not limited thereto.

[0112] In embodiments where the extended electrode layer 1904 is coupled to one or more surfaces (e.g., bottom surface) of the second III-V family layer 106 as described above (e.g., the bottom surface of the ion-implantation-defined nanorods 406 and / or the ion-implantation-defined sensing region 408), the extended electrode layer 1904 can include the same type of conductive features and / or the same material used to form the metal layer 1204 and / or the wiring 1206. In one example, the extended electrode layer 1904 can be formed simultaneously with the metal layer 1204 and / or the wiring 1206 and / or using the same metal deposition process as that used to form the metal layer 1204 and / or the wiring 1206 as described above. In another example, the extended electrode layer 1904 may be formed at a different time than the metal layer 1204 and / or the wiring 1206, may be formed using a different metal deposition process than the metal deposition process described above for forming the metal layer 1204 and / or the wiring 1206, and / or may be formed using a different material than the materials described above for forming the metal layer 1204 and / or the wiring 1206. In some embodiments, the extended electrode layer 1904 may include a width ranging from about 300 nm to about 5,000 nm and / or a length ranging from about 300 nm to about 5,000 nm.

[0113] Figure 20A shows the structure of the substrate after removing the resist and metal layers according to one or more embodiments described herein. Figure 19A and 19B A top view of a second side of an example non-limiting device 1900. In one example, the second side of the device 1900 may include Figure 20A The second side of the device 2000 shown in FIG. 2 , which may include the bottom side of the device 2000 . Figure 20B A cross-sectional side view of the device 2000 as viewed along a plane defined by line 2002 is shown. For the sake of brevity, repeated descriptions of similar elements and / or processes employed in other embodiments described herein are omitted. Because the extended electrode layer 1904 is optional, it is only included for illustrative purposes. Figure 20A and Figure 20B It is shown in the figure, and it should be understood that the present disclosure according to one or more embodiments described herein is not limited thereto.

[0114] The device 2000 may include an example non-limiting alternative embodiment of the device 1900 after the device 1900 is rinsed with a solvent to remove the first resist layer 304 and / or the metal layer 1204. For example, the device 2000 may include an example non-limiting alternative embodiment of the device 1900 after the device 1900 is rinsed with an organic solvent to remove the first resist layer 304 (e.g., a lift-off structure previously formed using the first resist layer 304) and / or the metal layer 1204. Removal of such layers may result in the device 2000 including one or more wires 1206 and / or, in some embodiments, an extended electrode layer 1904 coupled to a top surface of the fourth III-V family layer 110 (e.g., coupled to a top surface of the ion-implantation-defined nanorods 406 and / or the ion-implantation-defined sensing region 408).

[0115] In some embodiments, as Figure 20A and 20B As shown, one or more wirings 1206 may include wirings 1206a, 1206b that may be coupled to the second III-V family layer 106 and / or the fourth III-V family layer 110 (e.g., coupled to the top and / or bottom surfaces of the ion-implanted nanorods 406 and / or the ion-implanted sensing region 408). The wirings 1206a, 1206b may include control wiring structures (e.g., electrodes). For example, the wiring 1206a may include a chemical potential control electrode that is capable of applying a voltage to the wiring 1206a to change the energy of the ion-implanted nanorods 406 to a zero-energy state to form Majorana fermions (e.g., to facilitate observation of Majorana fermion characteristics, behavior, etc.). In another example, the wiring 1206b may include a pinch gate that allows such Majorana fermions to interact with a quantum structure (e.g., a quantum well including quantum dots of the device 2000, the ion-implanted sensing region 408, etc.). For example, changing the voltage of the pinch gate allows current to flow through one or more components of the device 2000 (e.g., the second III-V family layer 106, the third III-V family layer 108, the fourth III-V family layer 110, the superconducting layer 202, the ion-implantation-defined nanorods 406, the ion-implantation-defined sensing region 408, etc.), and enables sensing of the Majorana fermion structure (e.g., facilitating the observation of Majorana fermion characteristics, behavior, etc.).

[0116] Figure 21A FIG. 1 shows a schematic diagram of a packaging film after removing one or more portions of the ion implantation region to form one or more openings according to one or more embodiments described herein. Figure 20A and 20B A top view of a second side of an example non-limiting device 2000. In one example, the second side of the device 2000 may include Figure 21AThe second side of the device 2100 shown in FIG. 2 may include the bottom side of the device 2100 . Figure 21B A cross-sectional side view of device 2100 is shown as viewed along a plane defined by line 2102. For the sake of brevity, repeated descriptions of similar elements and / or processes employed in other embodiments described herein are omitted.

[0117] Since the extended electrode layer 1904 is optional, it is only shown for illustration purposes. Figure 21A , and it should be understood that the present disclosure according to one or more embodiments described herein is not limited thereto. Figure 21B The extended electrode layer 1904 is not shown.

[0118] The device 2100 may include example non-limiting alternative embodiments of the device 2000 after removing one or more portions of the ion implantation region 404 from the encapsulation film 1404 to form one or more openings 2104, such as Figure 21A and 21B For example, the device 2100 may include an example non-limiting alternative embodiment of the device 2000 after forming a patterned resist (e.g., the first resist layer 304 using one or more of the above-described photolithography techniques) on the surface of the ion implantation region 404 and / or removing one or more portions of the ion implantation region 404 from the encapsulation film 1404 to form one or more openings 2104 (e.g., using one or more of the above-described material removal techniques (e.g., CMP, etching, etc.)). In this example, the formation of such openings 2104 can expose the surface of the encapsulation film 1404 to enable removal of one or more portions of the encapsulation film 1404, as described below.

[0119] Figure 22A FIG. 1 shows a structure after removing one or more portions of an encapsulating film to form one or more hollow spaces and a suspended Majorana fermion device according to one or more embodiments described herein. Figure 21A and 21B A top view of a second side of an example non-limiting device 2100. In one example, the second side of the device 2100 may include Figure 22A The second side of the device 2200 shown in FIG. 2 , which may include the bottom side of the device 2200 . Figure 22B A cross-sectional side view of device 2200 is shown as viewed along a plane defined by line 2202. For the sake of brevity, repeated descriptions of similar elements and / or processes employed in other embodiments described herein are omitted.

[0120] Since the extended electrode layer 1904 is optional, it is only shown for illustration purposes. Figure 22A, and it should be understood that the present disclosure according to one or more embodiments described herein is not limited thereto. Figure 22B The extended electrode layer 1904 is not shown.

[0121] The device 2200 may include example non-limiting alternative embodiments of the device 2100 after removing one or more portions of the encapsulation film 1404 from the device 2100 to form one or more hollow spaces 2204, such as Figure 22A and 22B For example, device 2200 may include example non-limiting alternative embodiments of device 2100 after removing one or more portions of encapsulation film 1404 from device 2100 using, for example, a wet etching process (e.g., using a mild wet etching solution such as, for example, water, an organic solvent, etc.), a plasma treatment (e.g., mild plasma material removal), and / or other material removal techniques.

[0122] Since the packaging film 1404 is Figure 21A and 21B 406, and / or the ion-implantation-defined sensing region 408, and because the encapsulating film 1404 may include an amorphous and / or dielectric film as described above, it may have defects that may cause quenching of Majorana fermions that may be formed in the device 2100. Therefore, removing the encapsulating film 1404 may prevent such direct coupling, thereby preventing quenching of such Majorana fermions that may be formed in the device 2100.

[0123] In one embodiment, the device 2200 may include a quantum computing device (e.g., quantum circuit, quantum hardware, quantum processor, quantum computer, etc.) Figure 22A and 22B 206 is shown as a Majorana fermion device 2206 in bold dashed lines. Removing such a portion of the encapsulating film 1404 to form the hollow space 2204 as described above can thereby expose one or more sides of the Majorana fermion device 2206 to the hollow space 2204 of the device 2200. For example, the Majorana fermion device 2206 can include the second III-V family layer 106, the third III-V family layer 108, the fourth III-V family layer 110, the superconducting layer 202, the ion-implantation-defined nanorods 406, and / or a portion of the ion-implantation-defined sensing region 408, as shown in FIG. Figure 22A and 22B In this example, one or more surfaces of one or more such elements may include one or more sides of the Majorana fermion device 2206, which may be exposed to the hollow space 2204. For example, Figure 22B As shown, one or more surfaces of the fourth III-V group layer 110 , the superconducting layer 202 , the ion-implantation-defined nanorods 406 , and / or the ion-implantation-defined sensing region 408 of the Majorana fermion device 2206 may include one or more sides of the Majorana fermion device 2206 that may be exposed to the hollow space 2204 .

[0124] In another example (not shown), one or more surfaces of the second III-V family layer 106, the ion-implantation-defined nanorods 406, and / or the ion-implantation-defined sensing region 408 of the Majorana fermion device 2206 may include one or more sides of the Majorana fermion device 2206 that may be exposed to the hollow space 2204, which may be located above the second III-V family layer 106 (e.g., relative to the hollow space 2204). Figure 22B , is located “above” the second III-V family layer 106). In one or more of the examples described above, such formation of the hollow space 2204 above and / or below the Majorana fermion device 2206 can enable the Majorana fermion device 2206 to be suspended in the device 2200 (e.g., relative to the device 2200). Figure 22B , "above" and / or "below"). For example, Figure 21A 、 21B , 22A and 22B, after forming the opening 2104, a portion of the ion implanted region 404 may remain coupled to the Majorana fermion device 2206. Such remaining portion of the ion implanted region 404 may further be coupled to the Majorana fermion device 2206 above and / or below (e.g., relative to) the Majorana fermion device 2206. Figure 22B , the portion of the packaging film 1404 remaining after the hollow space 2204 is formed ("above" and / or "below"), as shown in FIG. Figure 22A and 22B As shown. Figure 22A and Figure 22B As shown, above and / or below the Majorana fermion device 2206 (e.g., relative to Figure 22B After the hollow space 2204 is formed ("above" and / or "below"), such remaining portion of the encapsulation film 1404 may also remain coupled to the second substrate layer 1504. The ion implantation region 404 and / or such remaining portion of the encapsulation film 1404 remaining after forming the opening 2104 and / or the hollow space 2204, respectively, may provide physical (e.g., mechanical) support for the Majorana fermion device 2206, such that the Majorana fermion device 2206 may be provided. Figure 22A and 22BAs shown, the Majorana fermion device 2206 can be suspended above and / or below the hollow space 2204 in the device 2200 (e.g., relative to Figure 22B Layout of elements shown in , “above” and / or “below”).

[0125] In another example, Figure 22A and 22B As shown in FIG, one or more wirings 1206a, 1206b can be coupled to such one or more sides of the Majorana fermion device 2206 that can be exposed to the hollow space 2204 of the device 2200. In this example, such wirings 1206a, 1206b can be coupled to multiple sides of the Majorana fermion device 2206 in the hollow space 2204 of the device 2200. Figure 24 As depicted, the wiring 1206a, 1206b may be further coupled to one or more conductive features of a support region 2402 on the device 2400, where the device 2400 may include a quantum computing device.

[0126] As described above, in some embodiments, the formation of the extended electrode layer 1904 may be optional. In embodiments where the extended electrode layer 1904 is formed in the device 2200, the extended electrode layer 1904 may be coupled to one or more surfaces (e.g., bottom surface) of the second III-V family layer 106 (e.g., the bottom surface of the nanorods 406 defined by the ion implantation), such as Figure 22A In another embodiment (not shown) in which the extended electrode layer 1904 is formed in the device 2200, the extended electrode layer 1904 can be coupled to one or more surfaces (e.g., top surfaces) of the fourth III-V family layer 110 and / or the superconducting layer 202 (e.g., the top surfaces of the ion-implantation-defined nanorods 406 and / or the ion-implantation-defined sensing region 408).

[0127] Figure 23A FIG. 1 shows a schematic diagram of a device after removing one or more portions of an encapsulation film and depositing one or more metal pads according to one or more embodiments described herein. Figure 21A and 21B A top view of a second side of an example non-limiting device 2100. In one example, the second side of the device 2100 may include Figure 23A The second side of the device 2300 shown in FIG. 2 , which may include the bottom side of the device 2300 . Figure 23B A cross-sectional side view of the device 2300 as viewed along a plane defined by line 2302 is shown. For the sake of brevity, repeated descriptions of similar elements and / or processes employed in other embodiments described herein are omitted. Since the extended electrode layer 1904 is optional, it is only described for illustrative purposes. Figure 23A and23B It is shown in the figure, and it should be understood that the present disclosure according to one or more embodiments described herein is not limited thereto.

[0128] Device 2300 may include an example, non-limiting, alternative embodiment of device 2100 after removing one or more portions of encapsulation film 1404 from device 2100 and / or depositing one or more metal pads 2304, which may include metal layer 1204 and / or metal wiring 1206. For example, device 2300 may include an example, non-limiting, alternative embodiment of device 2100 after removing one or more portions of encapsulation film 1404 from device 2100 using openings 2104 (e.g., wet etching using water, an organic solvent, etc.) and depositing metal pads 2304 using one or more material deposition techniques described above. In one embodiment (not shown), metal pads 2304 may be formed such that they couple to wiring 1206 (e.g., wiring 1206a, 1206b). Metal pads 2304 may include one or more of the materials defined above that may be used to form metal layer 1204 and / or wiring 1206.

[0129] Figure 24 A top view of an example non-limiting device 2400 that can facilitate a suspended Majorana fermion device including ion-implantation-defined nanorods in a semiconducting device according to one or more embodiments described herein is shown. For the sake of brevity, repetitive descriptions of similar elements and / or processes employed in other embodiments described herein are omitted.

[0130] Device 2400 may include an example, non-limiting alternative embodiment of device 2200, wherein device 2400 may include a quantum computing device comprising a plurality of devices 2200 and / or one or more support regions 2402. For example, device 2400 may include a plurality of devices 2200, wherein each such device 2200 may include a Majorana fermion device 2206 that may be suspended in a hollow space 2204 of device 2200 as described above. In this example, each such device 2200 may also include wiring 1206a, 1206b coupled to the Majorana fermion device 2206 in the hollow space 2204 of device 2200.

[0131] The one or more support regions 2402 of the device 2400 may include one or more support elements and / or one or more wiring structures of the device 2400. For example, the support region 2402 may include other portions of the ion implantation region 404 and / or the packaging film 1404 that remain after portions of the ion implantation region 404 and / or the packaging film 1404 have been removed to form the hollow space 2204 as described above. In another example, the support region 2402 may include one or more metallization layers having wiring structures, such as, for example, conductive components that can be coupled to the wiring 1206a, 1206b, the metal pad 2304, and / or other components of the device 2200 to facilitate performing one or more operations of the device 2200 according to one or more embodiments of the present disclosure described herein.

[0132] Device 2200 and / or Majorana fermion device 2206 can be associated with various technologies. For example, device 2200 and / or Majorana fermion device 2206 can be associated with semiconductor and / or superconductor device technology, semiconductor and / or superconductor device manufacturing technology, quantum computing device technology, quantum computing device manufacturing technology, Majorana fermion device technology, Majorana fermion device manufacturing technology, and / or other technologies.

[0133] The device 2200 and / or Majorana fermion device 2206 can provide technical improvements to the various techniques listed above. For example, the formation of the Majorana fermion device 2206 including ion-implantation-defined nanorods 406 that can be defined using an ion implantation process can prevent damage to the material of the device 2200 that may be caused by defining the circuit area of ​​the Majorana fermion device using other techniques (e.g., reactive ion etching (RIE) and / or cleaning processes). For example, such an ion implantation process can prevent damage to the second III-V family layer 106, the third III-V family layer 108, and / or the fourth III-V family layer 110 that include the ion-implantation-defined nanorods 406 and / or the ion-implantation-defined sensing region 408. Such an ion implantation process can also prevent damage to the superconducting layer 202.

[0134] In another example, placing separate types of electrodes (e.g., wiring 1206a, 1206b) above and below the ion-implanted nanorods 406 and / or Majorana fermion devices 2206 using a substrate bonding process can facilitate an improved wiring layout for a semiconducting and / or superconducting device (e.g., device 2200) including the Majorana fermion devices 2206 and / or the ion-implanted nanorods 406 by avoiding the use of competing substrate areas. In another example, separating the Majorana fermion devices 2206 using a wafer (substrate) bonding technique to create a suspended Majorana fermion device in the device 2200 having one or more sides exposed to the hollow space 2204 of the device 2200 enables the Majorana fermion devices 2206 to avoid contact with the silicon wafer or dielectric film of the device 2200. Such a suspension has the advantage of minimizing contact with other membranes of the device 2200, which can be a source of defects, and also provides an area for forming wiring patterns (e.g., wiring 1206a, 1206b) on at least two sides of the Majorana fermion device 2206 (e.g., in at least two planes).

[0135] In another example, the device 2200 and / or the Majorana fermion device 2206 can include one or more extended electrode layers 1904, which can include a quasiparticle gettering structure that can enable the application of a charge on the ion-implantation-defined nanorods 406, wherein such charge can serve as a barrier to repel quasiparticle electrons that can approach the ion-implantation-defined nanorods 406 and / or the ion-implantation-defined sensing region 408. By preventing the quasiparticle electrons from migrating to the ion-implantation-defined nanorods 406 and / or the ion-implantation-defined sensing region 408 and quenching Majorana fermions (which can destroy its coherence), the device 2200 and / or the Majorana fermion device 2206 including such an extended electrode layer 1904 can thereby facilitate reduced defects and / or improved lifetime of the ion-implantation-defined nanorods 406 and / or the ion-implantation-defined sensing region 408.

[0136] The device 2200 and / or Majorana fermion device 2206 can provide technical improvements to processing units associated with the device 2200 and / or Majorana fermion device 2206. For example, based on the examples provided above describing the use of methods and / or materials to fabricate the device 2200 and / or Majorana fermion device 2206 using methods and / or materials that protect elements of such devices (e.g., ion-implantation-defined nanorods 406, ion-implantation-defined sensing regions 408, extended electrode layer 1208, Majorana fermion device 2206 suspended in the device 2200, etc.) from defects and / or damage, the device 2200 and / or Majorana fermion device 2206 can prevent quenching of Majorana fermions. Based on such prevention of Majorana fermion quenching, the device 2200 and / or the Majorana fermion device 2206 can achieve improved (e.g., longer) coherence time of such Majorana fermions, thereby facilitating improved processing performance of a quantum computing device (e.g., a quantum processor) including the device 2200 and / or the Majorana fermion device 2206. Such improved processing performance of a quantum computing device (e.g., a quantum processor) including the device 2200 and / or the Majorana fermion device 2206 can further facilitate fast and / or potentially universal quantum computing.

[0137] The device 2200 and / or the Majorana fermion device 2206 can be coupled to hardware and / or software to solve problems that are highly technical in nature, not abstract, and not capable of being performed by a person as a set of mental acts. For example, the device 2200 and / or the Majorana fermion device 2206 can be employed in a semiconductor device (e.g., an integrated circuit) used to implement a quantum computing device that can process information and / or perform computations that are not abstract and not capable of being performed by a person as a set of mental acts.

[0138] It should be understood that device 2200 and / or Majorana fermion device 2206 can utilize various combinations of electronic components, mechanical components, and circuits that cannot be replicated or performed by a human mind. For example, a Majorana fermion device comprising a suspension of ion-implanted nanorods in a semiconducting device can facilitate the operation of a quantum computing device (e.g., a quantum processor of a quantum computing device) that is greater than the capabilities of the human brain. For example, the amount of data processed by such a quantum computing device utilizing device 2200 and / or Majorana fermion device 2206 in a certain period of time, the speed at which such data is processed, and / or the type of data processed can be greater, faster, and / or different than the amount, speed, and / or type of data that can be processed by the human brain in the same period of time.

[0139] According to several embodiments, the device 2200 and / or Majorana fermion device 2206 may also be fully operational (e.g., fully powered, fully executed, etc.) with respect to performing one or more other functions while performing the above-described operations. It should also be understood that such simultaneous multi-operation execution is beyond the capabilities of the human brain. It should also be understood that the device 2200 and / or Majorana fermion device 2206 may include information that is impossible for an entity (e.g., a human user) to manually obtain. For example, the type, amount, and / or variety of information included in the device 2200 and / or Majorana fermion device 2206 may be more complex than information manually obtained by a human user.

[0140] Figure 25 A flow chart is shown of an exemplary non-limiting method 2500 that can facilitate implementation of a Majorana fermion device comprising suspended nanorods defined by ion implantation in a semiconducting device, according to one or more embodiments described herein. For the sake of brevity, repetitive descriptions of similar elements and / or processes employed in other embodiments described herein are omitted.

[0141] Method 2500 may be performed by a computing system (e.g., Figure 26 ) and / or a computing device (e.g., an operating environment 2600 as shown in and described below). Figure 26 In a non-limiting example embodiment, such a computing system (e.g., operating environment 2600) and / or such a computing device (e.g., computer 2612) may include one or more processors and one or more memory devices on which executable instructions may be stored that, when executed by the one or more processors, may facilitate the operations described herein (including Figure 25 As a non-limiting example, one or more processors may facilitate performance of the operations described herein (e.g., method 2500) by directing and / or controlling one or more systems and / or devices operable to perform semiconductor manufacturing.

[0142] At 2502, method 2500 may include forming (e.g., via computer 2612) an ion implantation region (e.g., ion implantation region 404) in a quantum computing device (e.g., device 220, device 2400, etc.) coupled to a Majorana fermion device (e.g., Majorana fermion device 2206).

[0143] At 2504, method 2500 may include forming (e.g., via computer 2612) an encapsulation film (e.g., encapsulation film 1404) coupled to the ion implantation region and the substrate layer (e.g., second substrate layer 1504) to suspend the Majorana fermion device in the quantum computing device (e.g., as described above with reference to Figure 22A and 22B described).

[0144] For simplicity of explanation, the method described herein (for example, computer-implemented method) is shown and described as a series of actions. It should be understood and recognized that this subject innovation is not limited by the order of the actions shown and / or actions, and for example actions can occur in different orders and / or occur simultaneously, and occur together with other actions not presented and described herein. In addition, according to the disclosed subject matter, not all actions shown are necessary for realizing the method described herein (for example, computer-implemented method). In addition, it will be understood and appreciated by those skilled in the art that such method may alternatively be represented as a series of interrelated states via state diagrams or events. In addition, it should also be understood that the method disclosed hereinafter and throughout this specification (for example, computer-implemented method) can be stored on goods to facilitate such method (for example, computer-implemented method) transmission and delivery to a computer. As used herein, the term goods is intended to encompass a computer program accessible from any computer-readable device or storage medium.

[0145] To provide context for various aspects of the disclosed subject matter, Figure 26 The following discussion is intended to provide a general description of a suitable environment in which various aspects of the disclosed subject matter may be implemented. Figure 26 A block diagram of an example non-limiting operating environment that may facilitate one or more embodiments described herein is shown. For example, operating environment 2600 may be used to implement Figure 25 The present invention provides an example non-limiting method 2500 that can be used to implement one or more embodiments of the present disclosure described herein. For the sake of brevity, repeated descriptions of similar elements and / or processes used in other embodiments described herein are omitted.

[0146] refer to Figure 26A suitable operating environment 2600 for implementing various aspects of the present disclosure may also include a computer 2612. The computer 2612 may also include a processing unit 2614, a system memory 2616, and a system bus 2618. The system bus 2618 couples system components, including but not limited to the system memory 2616, to the processing unit 2614. The processing unit 2614 may be any of a variety of available processors. Dual microprocessors and other multi-processor architectures may also be used as the processing unit 2614. The system bus 2618 may be any of several types of bus structures, including a memory bus or memory controller, a peripheral bus or external bus, and / or a local bus using various available bus architectures, including but not limited to the Industry Standard Architecture (ISA), Micro Channel Architecture (MSA), Extended ISA (EISA), Intelligent Drive Electronics (IDE), VESA Local Bus (VLB), Peripheral Component Interconnect (PCI), card bus, Universal Serial Bus (USB), Advanced Graphics Port (AGP), FireWire (IEEE 1394), and Small Computer System Interface (SCSI).

[0147] The system memory 2616 may also include volatile memory 2620 and non-volatile memory 2622. The basic input / output system (BIOS) contains basic routines for transferring information between elements within the computer 2612, such as during startup, and is stored in the non-volatile memory 2622. The computer 2612 may also include removable / non-removable, volatile / non-volatile computer storage media. For example, Figure 26 Disk storage 2624 is shown. Disk storage 2624 may also include, but is not limited to, devices such as a disk drive, a floppy disk drive, a tape drive, a Jaz drive, a Zip drive, an LS-100 drive, a flash memory card, or a memory stick. Disk storage 2624 may also include storage media, either alone or in combination with other storage media. To facilitate connecting disk storage 2624 to system bus 2618, a removable or non-removable interface, such as interface 2626, is typically used. Figure 26 Also shown is software that acts as an intermediary between a user and the basic computer resources described in a suitable operating environment 2600. Such software may also include, for example, an operating system 2628. The operating system 2628, which may be stored on disk storage 2624, is used to control and allocate the resources of the computer 2612.

[0148] System applications 2630 utilize operating system 2628 to manage resources through, for example, program modules 2632 and program data 2634 stored in system memory 2616 or disk storage 2624. It should be understood that the present disclosure can be implemented using various operating systems or combinations of operating systems. A user inputs commands or information to computer 2612 via input device 2636. Input device 2636 includes, but is not limited to, pointing devices such as a mouse, trackball, stylus, touchpad, keyboard, microphone, joystick, game pad, satellite dish, scanner, TV tuner card, digital camera, digital video camera, webcam, etc. These and other input devices are connected to processing unit 2614 via interface port 2638 via system bus 2618. Interface port 2638 includes, for example, a serial port, parallel port, game port, and universal serial bus (USB). Output device 2640 uses some of the same types of ports as input device 2636. Thus, for example, a USB port can be used to provide input to computer 2612 and output information from computer 2612 to output device 2640. Output adapters 2642 are provided to illustrate that there are some output devices 2640, such as monitors, speakers, and printers, as well as other output devices 2640, that require special adapters. By way of illustration and not limitation, output adapters 2642 include graphics cards and sound cards that provide a means of connecting output devices 2640 to the system bus 2618. It should be noted that other devices and / or device systems provide input and output capabilities, such as remote computers 2644.

[0149] Computer 2612 can operate in a networked environment using logical connections to one or more remote computers, such as remote computer 2644. Remote computer 2644 can be a computer, server, router, network PC, workstation, microprocessor-based appliance, peer device, or other common network node, and may also typically include many of the elements described above with respect to computer 2612. For simplicity, only memory storage device 2646 and remote computer 2644 are shown. Remote computer 2644 is logically connected to computer 2612 via network interface 2648, and then physically connected via communication connection 2650. Network interface 2648 encompasses wired and / or wireless communication networks, such as local area networks (LANs), wide area networks (WANs), cellular networks, and the like. LAN technologies include fiber distributed data interface (FDDI), copper distributed data interface (CDDI), Ethernet, token ring, and the like. WAN technologies include, but are not limited to, point-to-point links, circuit-switched networks such as Integrated Services Digital Network (ISDN) and its variants, packet-switched networks, and digital subscriber lines (DSL). Communication connection 2650 refers to the hardware / software used to connect the network interface 2648 to the system bus 2618. Although the communication connection 2650 is shown as being internal to the computer 2612 for clarity of illustration, it may also be external to the computer 2612. For exemplary purposes only, the hardware / software used to connect to the network interface 2648 may also include internal and external technologies, such as, including conventional telephone-grade modems, cable and DSL modems, ISDN adapters, and Ethernet cards.

[0150] The present invention may be a system, method, and / or computer program product at any possible level of technical detail integration. The computer program product may include a computer-readable storage medium having computer-readable program instructions thereon, the computer-readable program instructions being used to cause a processor to perform various aspects of the present invention. The computer-readable storage medium may be a tangible device that can hold and store instructions used by an instruction execution device. The computer-readable storage medium may be, for example, but not limited to, an electronic storage device, a magnetic storage device, an optical storage device, an electromagnetic storage device, a semiconductor storage device, or any suitable combination of the foregoing storage devices. A non-exhaustive list of more specific examples of computer-readable storage media includes the following: a portable computer disk, a hard disk, a random access memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or flash memory), a static random access memory (SRAM), a portable compact disc read-only memory (CD-ROM), a digital versatile disk (DVD), a memory stick, a floppy disk, a mechanical encoding device such as a punch card or a raised structure in a groove on which instructions are recorded, and any suitable combination of the above devices. Computer-readable storage media as used herein should not be construed as transitory signals per se, such as radio waves or other freely propagating electromagnetic waves, electromagnetic waves propagating through waveguides or other transmission media (e.g., light pulses through fiber optic cables), or electrical signals transmitted through wires.

[0151] Computer-readable program instructions described herein can be downloaded to corresponding computing / processing equipment from computer-readable storage media, or downloaded to external computers or external storage devices via a network (such as the Internet, local area network, wide area network and / or wireless network).Network can include copper transmission cables, optical transmission optical fibers, wireless transmission, routers, firewalls, switches, gateway computers and / or edge servers.Network adapter card or network interface in each computing / processing equipment receive computer-readable program instructions from the network, and forward computer-readable program instructions to be stored in the computer-readable storage media in the corresponding computing / processing equipment.The computer-readable program instructions for performing operation of the present invention can be assembly instructions, instruction set architecture (ISA) instructions, machine instructions, machine-related instructions, microcode, firmware instructions, state setting data, configuration data of integrated circuits or source code or object code written in any combination of one or more programming languages ​​(including object-oriented programming languages, such as Smalltalk, C++ etc.) and procedural programming languages ​​(such as " C " programming language or similar programming languages). The computer-readable program instructions can be executed entirely on the user's computer, partially on the user's computer, as an independent software package, partially on the user's computer and partially on a remote computer, or entirely on a remote computer or server. In the latter scenario, the remote computer can be connected to the user's computer via any type of network, including a local area network (LAN) or a wide area network (WAN), or can be connected to an external computer (e.g., via the Internet using an Internet service provider). In some embodiments, an electronic circuit comprising, for example, a programmable logic circuit, a field programmable gate array (FPGA), or a programmable logic array (PLA) can execute the computer-readable program instructions to personalize the electronic circuit by utilizing the state information of the computer-readable program instructions to perform various aspects of the present invention.

[0152] Reference is made to the flowchart and / or block diagram of the method, device (system) and computer program product according to an embodiment of the present invention to describe various aspects of the present invention at this.It will be understood that each frame of flowchart and / or block diagram and the combination of the frame in flowchart and / or block diagram can be realized by computer-readable program instructions.These computer-readable program instructions can be provided to the processor of general-purpose computer, special-purpose computer or other programmable data processing device to produce machine, so that the instruction executed via the processor of computer or other programmable data processing device creates the device for realizing the function / action specified in one or more frames of flowchart and / or block diagram.These computer-readable program instructions can also be stored in computer-readable storage medium, which can guide computer, programmable data processing device and / or other equipment to work in an ad hoc manner, so that the computer-readable storage medium having instruction stored therein includes product, and this product includes the instruction of various aspects of the function / action specified in one or more frames of flowchart and / or block diagram. The computer-readable program instructions may also be loaded onto a computer, other programmable data processing apparatus, or other device, so that a series of operational steps will be performed on the computer, other programmable apparatus, or other device to produce a computer-implemented process, so that the instructions executed on the computer, other programmable apparatus, or other device implement the functions / actions specified in one or more boxes of the flowchart and / or block diagram.

[0153] The flow charts and block diagrams in the accompanying drawings illustrate the possible architecture, function and operation of the system, method and computer program product according to various embodiments of the present invention. In this regard, each frame in the flow chart or block diagram can represent a module, segment or part of an instruction, which includes one or more executable instructions for realizing the specified logical function. In some alternative embodiments, the function noted in the frame may not occur in the order noted in the figure. For example, the two frames shown in succession can actually be performed substantially simultaneously, or these frames can sometimes be performed in reverse order, depending on the function involved. It will also be noted that the combination of each frame of the block diagram and / or flow chart illustration and the frame in the block diagram and / or flow chart illustration can be realized by a dedicated hardware-based system that performs a specified function or action or performs a combination of special-purpose hardware and computer instructions.

[0154] Although the present invention is described above in the general context of the computer executable instructions of the computer program product running on one and / or multiple computers, it will be appreciated by those skilled in the art that the present invention can also be implemented in conjunction with other program modules. Typically, a program module includes routines, programs, components, data structures, etc. that perform specific tasks and / or implement specific abstract data types. In addition, it will be appreciated by those skilled in the art that the computer-implemented method of the present invention can be implemented with other computer system configurations, including single-processor or multi-processor computer systems, small computing devices, mainframe computers, and computers, handheld computing devices (e.g., PDAs, phones), microprocessor-based or programmable consumer or industrial electronic products, etc. The various aspects shown can also be put into practice in a distributed computing environment in which tasks are performed by a remote processing device linked by a communication network. However, if not all aspects, some aspects of the present invention can be put into practice on a stand-alone computer. In a distributed computing environment, program modules can be located in local and remote memory storage devices.

[0155] As used in this application, the terms "component", "system", "platform", "interface" and the like may refer to and / or may include computer-related entities or entities related to an operating machine having one or more specific functions. The entities disclosed herein may be hardware, a combination of hardware and software, software, or software in execution. For example, a component may be, but is not limited to, a process, a processor, an object, an executable file, an execution thread, a program and / or a computer running on a processor. As an illustration, both an application running on a server and a server may be a component. One or more components may reside within an executed process and / or thread, and a component may be located on a computer and / or distributed between two or more computers. In another example, the corresponding component may be executed from various computer-readable media having various data structures stored thereon. These components may communicate via local and / or remote processes, for example, according to a signal having one or more data packets (for example, data from a component, which interacts with another component in a local system, a distributed system and / or interacts with other systems via a network such as the Internet). As another example, a component may be a device having a specific function provided by a mechanical component operated by an electrical or electronic circuit, which is operated by a software or firmware application executed by a processor. In this case, the processor can be internal or external to the device and can execute at least a portion of a software or firmware application. As another example, the component can be a device that provides a specific function through electronic components rather than mechanical components, where the electronic component can include a processor or other device to execute the software or firmware that at least partially imparts the function to the electronic component. In one aspect, the component can emulate the electronic component via a virtual machine, such as within a cloud computing system.

[0156] In addition, the term "or" is intended to mean an inclusive "or" rather than an exclusive "or". That is, unless specified otherwise or clear from the context, "X employs A or B" is intended to mean any natural inclusive arrangement. That is, if X employs A; X employs B; or X employs both A and B, then "X employs A or B" is satisfied under any of the foregoing instances. In addition, the articles "a" and "an" as used in this specification and the drawings should generally be interpreted to mean "one or more" unless specified otherwise or clear from the context to refer to the singular form. As used herein, the terms "example" and / or "exemplary" are used to mean serving as an example, instance, or illustration. For the avoidance of doubt, the subject matter disclosed herein is not limited to these examples. In addition, any aspect or design described herein as "example" and / or "exemplary" is not necessarily to be construed as preferred or advantageous over other aspects or designs, nor is it meant to exclude equivalent exemplary structures and techniques known to those of ordinary skill in the art.

[0157] As used in this specification, the term "processor" may refer to essentially any computational processing unit or device, including but not limited to a single-core processor; a single processor with software multi-threaded execution capability; a multi-core processor; a multi-core processor with software multi-threaded execution capability; a multi-core processor with hardware multi-threading technology; a parallel platform; and a parallel platform with distributed shared memory. In addition, a processor may refer to an integrated circuit, an application-specific integrated circuit (ASIC), a digital signal processor (DSP), a field programmable gate array (FPGA), a programmable logic controller (PLC), a complex programmable logic device (CPLD), discrete gate or transistor logic, discrete hardware components, or any combination thereof, designed to perform the functions described herein. In addition, the processor may employ nanoscale architectures, such as, but not limited to, transistors, switches, and gates based on molecules and quantum dots, in order to optimize space usage or enhance the performance of user devices. The processor may also be implemented as a combination of computational processing units. In this disclosure, terms such as "storage," "storage device," "data storage," "data storage device," "data storage device," "database," and any other information storage component that is substantially related to the operation and functionality of the component are used to refer to a "memory component," an entity embodied in a "memory," or a component that includes a memory. It should be understood that the memory and / or memory components described herein can be volatile memory or non-volatile memory, or can include both volatile and non-volatile memory. By way of illustration and not limitation, non-volatile memory can include read-only memory (ROM), programmable ROM (PROM), electrically programmable ROM (EPROM), electrically erasable ROM (EEPROM), flash memory, or non-volatile random access memory (RAM) (e.g., ferroelectric RAM (FeRAM)). Volatile memory can include, for example, RAM that can be used as external cache memory. By way of illustration and not limitation, RAM is available in many forms, such as synchronous RAM (SRAM), dynamic RAM (DRAM), synchronous DRAM (SDRAM), double data rate SDRAM (DDR SDRAM), enhanced SDRAM (ESDRAM), synchronous link DRAM (SLDRAM), direct Rambus RAM (DRRAM), Direct Rambus Dynamic RAM (DRDRAM), and Rambus Dynamic RAM (RDRAM).

[0158] The above description includes only examples of systems and computer-implemented methods. Of course, it is not possible to describe every conceivable combination of components or computer-implemented methods for purposes of describing the present disclosure, but one of ordinary skill in the art will recognize that many further combinations and permutations of the present disclosure are possible. Furthermore, to the extent that the terms "including," "having," "having," and the like are used in the detailed description, claims, appendices, and figures, these terms are intended to be inclusive in a manner similar to that in which the term "comprising" is interpreted when used as a transitional word in the claims.

[0159] The descriptions of various embodiments have been presented herein for illustrative purposes, but are not intended to be exhaustive or limited to the disclosed embodiments. Many modifications and variations will be apparent to those of ordinary skill in the art without departing from the scope and spirit of the described embodiments. The terminology used herein was chosen to best explain the principles of the embodiments, practical applications, or improvements over existing technologies in the marketplace, or to enable others of ordinary skill in the art to understand the embodiments disclosed herein.

Claims

1. A quantum computing device comprising: a Majorana fermion device coupled to the ion implantation region, wherein the Majorana fermion device comprises at least one ion implantation-defined sensing region including at least one quantum dot; and An encapsulation film is coupled to the ion implantation region and the substrate layer, wherein the encapsulation film suspends the Majorana fermion device in the quantum computing device.

2. The device according to the preceding claim, wherein The Majorana fermion device includes nanorods confined by ion implantation.

3. The device according to any one of the preceding claims 1 to 2, wherein: The Majorana fermion device includes a superconducting layer.

4. The device according to any one of the preceding claims 1 to 2, wherein: The Majorana fermion device comprises: a superconducting layer coupled to the ion-implanted confined nanorods; and An oxidation-free interface between the ion-implanted nanorods and the superconducting layer.

5. The device according to any one of the preceding claims 1-2, further comprising: An extended electrode layer coupled to the Majorana fermion device, the extended electrode layer repels undesired quasiparticles from the Majorana fermion device.

6. Device according to the preceding claim 5, wherein The extended electrode layer includes a quasiparticle gettering structure.

7. The device according to claim 5, wherein The extended electrode layer includes a width ranging from about 300 nm to about 5,000 nm and / or a length ranging from about 300 nm to about 5,000 nm.

8. The device according to any one of the preceding claims 1-2, 6-7, further comprising: One or more wirings coupled to the Majorana fermion device, wherein the one or more wirings are selected from the group consisting of: control wiring, a tunnel junction gate, a pinch gate, a chemical potential control gate, a sense wiring, a semiconductor connector, an electrode, a circuit wiring of the device, and a contact.

9. The device according to any one of the preceding claims 1-2, 6-7, wherein: One or more sides of the Majorana fermion device are exposed to the hollow space of the quantum computing device to prevent the Majorana fermion device from directly contacting at least one of the substrate layer or dielectric film of the quantum computing device, thereby facilitating at least one of: reduced quasiparticle generation in the Majorana fermion device; improved performance of the Majorana fermion device; or improved lifetime of the Majorana fermion device.

10. A method for forming a quantum computing device, comprising: forming an ion implantation region coupled to a Majorana fermion device in a quantum computing device; forming an encapsulation film coupled to the ion implantation region and the substrate layer so as to suspend the Majorana fermion device in the quantum computing device; as well as At least one sensing region including at least one quantum dot is defined on the nanorod of the Majorana fermion device using an ion implantation process.

11. The method according to the preceding claim, further comprising: growing nanorods on a semiconductor layer of the quantum computing device using an epitaxial film growth process; as well as A superconducting layer is grown on the nanorods using the epitaxial film growth process to form an oxidation-free interface between the nanorods and the superconducting layer.

12. The method according to any one of the preceding claims 10 to 11, further comprising: At least one conductive region of the nanorods of the Majorana fermion device is defined using an ion implantation process.

13. The method according to any one of the preceding claims 10 to 11, further comprising: An extended electrode layer is coupled to the Majorana fermion device to repel undesired quasiparticles from the Majorana fermion device.

14. The method according to any one of the preceding claims 10 to 11, further comprising: One or more portions of at least one of the ion implantation region or the encapsulation film are removed from the quantum computing device to expose one or more sides of the Majorana fermion device to the hollow space of the quantum computing device to prevent the Majorana fermion device from directly contacting at least one of the substrate layer or the dielectric film of the quantum computing device, thereby facilitating at least one of: reduced quasiparticle generation in the Majorana fermion device; improved performance of the Majorana fermion device; or improved lifetime of the Majorana fermion device.

15. A quantum device comprising: A Majorana fermion device comprising ion-implantation-defined nanorods, wherein the ion-implantation-defined nanorods include at least one ion-implantation-defined sensing region comprising at least one quantum dot; and A superconducting layer is coupled to the ion-implanted confined nanorods.

16. The apparatus according to claim 15, wherein The Majorana fermion device includes a Majorana qubit.

17. The apparatus according to any one of the preceding claims 15 to 16, further comprising: An oxidation-free interface between the ion-implanted nanorods and the superconducting layer.

18. The apparatus according to any one of the preceding claims 15 to 16, further comprising: An extended electrode layer coupled to the Majorana fermion device, the extended electrode layer repels undesired quasiparticles from the Majorana fermion device.

19. The device according to the preceding claim, wherein The extended electrode layer includes a quasiparticle gettering structure.

20. The apparatus according to any one of the preceding claims 15-16, 19, further comprising: One or more wirings coupled to at least one of the Majorana fermion device, the ion implantation defined nanorods, or the superconducting layer, wherein the one or more wirings are selected from the group consisting of: control wiring, a tunnel junction gate, a pinch gate, a chemical potential control gate, a sense wiring, a semiconductor connector, an electrode, a circuit wiring of the device, and a contact.

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