Radar device

Abstract

The present invention provides a radar device, comprising a base material having a plurality of high-frequency conductor layers arranged on a front surface, a semiconductor component in contact with the high-frequency conductor layers via a conductive component, and an adhesive for bonding the semiconductor component to the front surface of the base material. All of the plurality of high-frequency conductor layers are arranged from an inner end portion to an outer end portion in the front surface by bending at least any one of the high-frequency conductor layers in a plane of the front surface, wherein the inner end portion is opposite to the bottom surface of the semiconductor component, and the outer end portion is located closer to the first direction side than the first side surface of the semiconductor component facing the first direction. The adhesive is in contact with the front surface and the side surface of the semiconductor component except for the formation portion of the plurality of high-frequency conductor layers.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application is based on Japanese Patent Application No. 2019-215960 filed on November 29, 2019, and cites the contents thereof. Technical Field

[0003] The present invention relates to a radar device. Background Art

[0004] The radar device is used to confirm whether there is an object within the radar's irradiation range using high-frequency radar. For example, the radar device is used to detect whether there is another vehicle in front of the vehicle, the distance between the vehicle and the other vehicle, etc.

[0005] In the radar device, semiconductor components are arranged opposite to each other on the front surface of an insulating base material, and a plurality of high-frequency conductor layers are provided on the front surface of the base material for transmitting high-frequency signals in a state of being conductive with the semiconductor components. In addition, the semiconductor components are connected to the conductor layer including the high-frequency conductor layer via a solder material. Furthermore, in order to suppress the displacement of the semiconductor components relative to the base material due to temperature changes, the semiconductor components and the base material are bonded by an adhesive.

[0006] For example, in the semiconductor device having a high-frequency conduction element of Patent Document 1, a semiconductor package and a substrate are connected via a high-frequency conduction element, a connection element, etc., and the semiconductor package and the substrate are fixed by an underfill material. In addition, the high-frequency conduction element and the underfill material are provided at positions that do not overlap when orthogonally projected onto the main surface of the substrate.

[0007] Patent Document 1: Japanese Utility Model Registration No. 3221210

[0008] In the semiconductor device of Patent Document 1, no study is made on how to provide a high-frequency conductor layer for transmitting a high-frequency signal on a substrate in relation to the position of an underfill material as an adhesive.

[0009] The high-frequency conductor layer has the property of transmitting high-frequency signals, and there is a concern that the signal strength will be attenuated if the formation length becomes longer. Therefore, in order to make the strength of the high-frequency signal difficult to attenuate, it is considered to shorten the formation length of the high-frequency conductor layer as much as possible. In addition, as in Patent Document 1, in order to reduce the attenuation of the strength of the high-frequency signal, it is considered to prevent the bottom filling material from contacting the high-frequency conductive element.

[0010] If you want to shorten the formation length of the high-frequency conductor layer, you can consider distributing the high-frequency conductor layer around the semiconductor components in the base material (substrate). However, in this case, in the radar device, there is a concern that the proportion of the antenna layer connected to the high-frequency conductor layer increases, and the overall size of the radar device is increased. Due to the limitation of the space for configuring the radar device, it is necessary to miniaturize the device as a whole.

[0011] In addition, in Patent Document 1, the semiconductor package as a semiconductor component is fixed to the substrate by fixing the bottom surface of the semiconductor package to the surface of the substrate via the bottom filling material. However, in the semiconductor device, components made of various materials such as the substrate, semiconductor package, high-frequency conduction element, connection element, bottom filling material, etc. are used, and the linear expansion coefficients of the components are different from each other. Therefore, the thermal stresses acting on the components are different from each other due to the influence of temperature rise, etc., and the semiconductor package is displaced relative to the base material in a direction parallel to the surface of the base material, and there is a concern that cracks will occur in the high-frequency conduction element, the connection element, etc.

[0012] There is still room for further improvement in the method of arranging high-frequency conductor layers and adhesives relative to semiconductor components for the purpose of reducing attenuation of high-frequency signal intensity, miniaturizing devices, and reducing cracks caused by thermal stress. Summary of the invention

[0013] The present disclosure provides a radar device capable of appropriately setting the arrangement relationship between a high-frequency conductor layer and an adhesive with respect to a semiconductor component for the purpose of reducing attenuation of high-frequency signal intensity, miniaturizing the device, and reducing cracks caused by thermal stress.

[0014] One aspect of the present disclosure is a radar device comprising: a base material having a plurality of conductor layers provided on a front surface or a back surface, the plurality of conductor layers including a plurality of high-frequency conductor layers for transmitting high-frequency signals;

[0015] a semiconductor component that is opposed to the front surface of the base material, is in contact with the plurality of conductor layers in the base material via a conductive component, and generates a high-frequency signal; and

[0016] Adhesive for bonding the semiconductor component to the front surface of the base material.

[0017] The high-frequency conductor layer group is arranged from the inner end portion in the front surface or the back surface to the outer end portion by bending at least any one of the high-frequency conductor layers in the plane of the front surface or the back surface, wherein the high-frequency conductor layer is all of the plurality of high-frequency conductor layers or a part of the plurality of high-frequency conductor layers, the inner end portion is opposite to the bottom surface of the semiconductor component, and the outer end portion is located closer to the first direction side than the first side portion in the plurality of side surfaces of the semiconductor component that faces the first direction from the central portion in the plane of the front surface or the back surface to the edge portion,

[0018] The adhesive is in contact with the front surface excluding the formation sites of the plurality of high-frequency conductor layers and the side surfaces of the semiconductor component.

[0019] In the above-mentioned radar device, the arrangement relationship between the high-frequency conductor layer and the adhesive and the semiconductor component has been studied.

[0020] Specifically, the whole of the plurality of high-frequency conductor layers or at least any one of the high-frequency conductor layers in the high-frequency conductor layer group is bent in the plane of the front surface of the base material. As a result, the outer end of the whole of the plurality of high-frequency conductor layers or the high-frequency conductor layer group is located on the first direction side relative to the first side surface of the semiconductor component. According to this structure, the formation length of the high-frequency conductor layer can be shortened as much as possible, the attenuation of the intensity of the high-frequency signal can be reduced, and the high-frequency conductor layer can be arranged as concentratedly as possible to achieve miniaturization of the device.

[0021] In addition, the adhesive is in contact with the front surface of the base material and the side surface of the semiconductor component except for the formation portion of the multiple high-frequency conductor layers. According to this structure, even when thermal stress caused by the difference in linear expansion coefficients of each component such as the base material, the conductor layer, the semiconductor component, the conductive component, and the adhesive acts on the semiconductor component, the adhesive can also bear the side surface of the semiconductor component. Therefore, the semiconductor component cannot be displaced relative to the base material in a direction parallel to the front surface of the base material, and cracks in the conductive component and the like can be avoided.

[0022] Therefore, according to the radar device, the arrangement relationship between the high-frequency conductor layer and the adhesive and the semiconductor component can be appropriately set for the purpose of reducing attenuation of the high-frequency signal intensity, miniaturizing the device, and reducing cracks caused by thermal stress. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] The objects, features, advantages and the like of the present disclosure will become more apparent by referring to the accompanying drawings and the detailed description given below.

[0024] Figure 1This is a plan view showing the radar device according to the first embodiment as viewed from the front surface of the base material.

[0025] Figure 2 This is a plan view showing the periphery of the semiconductor component and the high-frequency conductor layer in the radar device according to the first embodiment, as viewed from the front surface of the base material.

[0026] Figure 3 This is a plan view showing the antenna conductor layer in the radar device according to the first embodiment as viewed from the back surface of the base material.

[0027] Figure 4 This is a plan view showing the periphery of the semiconductor component, the high-frequency conductor layer, and the adhesive in the radar device according to the first embodiment as viewed from the front surface of the base material.

[0028] Figure 5 This is an enlarged plan view showing the periphery of the adhesive in the radar device according to the first embodiment as viewed from the front surface of the base material.

[0029] Figure 6 This is a cross-sectional view showing the periphery of a semiconductor component, a high-frequency conductor layer, and an adhesive in the radar device according to the first embodiment.

[0030] Figure 7 This is a cross-sectional view showing the periphery of a semiconductor component, a high-frequency conductor layer, and an adhesive in another radar device according to the first embodiment.

[0031] Figure 8 This is a cross-sectional view showing the periphery of a semiconductor component, a high-frequency conductor layer, and an adhesive in another radar device according to the first embodiment.

[0032] Fig. 9 This is a cross-sectional view showing the periphery of a semiconductor component, a high-frequency conductor layer, and an adhesive in another radar device according to the first embodiment.

[0033] Fig.10 This is an enlarged plan view showing the periphery of the adhesive in another radar device according to the first embodiment as viewed from the front surface of the base material.

[0034] Fig.11 This is a plan view showing the periphery of the semiconductor component, the high-frequency conductor layer, and the adhesive in the radar device according to the second embodiment as viewed from the front surface of the base material.

[0035] Fig.12 This is a plan view showing the periphery of a semiconductor component, a high-frequency conductor layer, and an adhesive in another radar device according to the second embodiment, as viewed from the front surface of the base material.

[0036] Fig.13 This is a plan view showing the periphery of a semiconductor component, a high-frequency conductor layer, and an adhesive in another radar device according to the second embodiment, as viewed from the front surface of the base material. DETAILED DESCRIPTION

[0037] Preferred embodiments of the above-mentioned radar device will be described with reference to the drawings.

[0038] <Implementation method 1>

[0039] like Figure 1 to Figure 5 As shown, the radar device 1 of this embodiment includes a base material 2, a semiconductor component 3, and an adhesive 4. A plurality of conductor layers 20, 21, 22 including a plurality of high-frequency conductor layers 21, 22 for transmitting high-frequency signals are provided on the front surface 201 of the base material 2. The semiconductor component 3 faces the front surface 201 of the base material 2, contacts the plurality of conductor layers 20, 21, 22 in the base material 2 via the conductive component 35, and generates a high-frequency signal. The adhesive 4 bonds the semiconductor component 3 to the front surface 201 of the base material 2.

[0040] All of the plurality of high-frequency conductor layers 21 and 22 are provided from inner end portions 211 and 221 in the front surface 201 to outer end portions 212 and 222 by bending at least any one of the high-frequency conductor layers in the plane of the front surface 201, wherein the inner end portions 211 and 221 are opposed to the bottom surface 301 of the semiconductor component 3, and the outer end portions 212 and 222 are located closer to the first direction D1 side than the first side surface 302A in the plurality of side surfaces 302A, 302B, and 302C of the semiconductor component 3, which faces the first direction D1 from the center portion to the edge portion in the plane of the front surface 201. The adhesive 4 is in contact with the front surface 201 and the side surfaces 302A, 302B, and 302C of the semiconductor component 3 except for the formation portions of the plurality of high-frequency conductor layers 21 and 22.

[0041] Hereinafter, the radar device 1 of this embodiment will be described in detail.

[0042] (Radar device 1)

[0043] The radar device 1 is used to confirm whether there is an object within the radar's irradiation range using a high-frequency radar. The radar device 1 of this embodiment is a vehicle-mounted device used to detect whether there is another vehicle in front of the vehicle, how far the vehicle is from the vehicle to the other vehicle, etc. The radar device 1 is a millimeter wave radar that uses millimeter waves with a frequency in the range of 30 to 300 GHz. In addition, the high frequency can also be a frequency of 3 MHz to 300 GHz.

[0044] The radar device 1 is arranged in front of the vehicle. More specifically, the radar device 1 is arranged on the back side of a sign such as a front grille provided in front of the vehicle. In this embodiment, a vehicle equipped with the radar device 1 is formed. In addition, the radar device 1 is used in a vehicle-mounted radar monitoring system. The radar monitoring system uses a vehicle-mounted control device to perform object detection based on a high-frequency radar.

[0045] In the radar device 1, a direction in the plane of the front surface 201 of the base material 2 and a direction extending from the center portion of the base material 2 to the edge portion is referred to as a first direction D1. The first direction D1 is set to be a direction perpendicular to one side of the substantially quadrilateral base material 2. In addition, a direction orthogonal to the first direction D1 in the plane of the front surface 201 of the base material 2 is referred to as a second direction D2. The second direction D2 refers to a direction toward both sides orthogonal to the first direction D1.

[0046] In addition, the direction on the opposite side of the first direction D1 in the plane of the front surface 201 of the base material 2 is referred to as a third direction D3. In addition, the direction in which the semiconductor component 3 is opposite to the base material 2 and is perpendicular to the plane of the front surface 201 and the back surface 202 of the base material 2 is referred to as a height direction H. In addition, the side surface of the semiconductor component 3 on the first direction D1 side is referred to as a first side surface 302A, the pair of side surfaces on the second direction D2 side of the semiconductor component 3 is referred to as a second side surface 302B, and the side surface of the semiconductor component 3 on the third direction D3 side is referred to as a third side surface 302C.

[0047] (Base material 2)

[0048] like Figure 1 and Figure 3 As shown, the base material 2 includes an insulating base material body 200 , a plurality of conductor layers 20 , 21 , and 22 provided on a front surface 201 of the base material body 200 , and an antenna conductor layer 23 provided on a back surface 202 of the base material body 200 . Figure 1 represents the front surface 201 of the base material 2, Figure 3 2 shows the back surface 202 of the base material 2. The base material body 200 is formed of a flat plate-shaped substrate. The front surface 201 and the back surface 202 are formed as the main surfaces with the largest area in the base material body 200. The antenna conductor layer 23 is connected to the high-frequency conductor layers 21 and 22 among the plurality of conductor layers 20, 21, and 22.

[0049] (Antenna Conductor Layer 23)

[0050] like Figure 1 and Figure 3As shown, the antenna conductor layer 23 constitutes a transmitting antenna or a receiving antenna for high-frequency signals. In the antenna conductor layer 23, there is a transmitting antenna conductor layer 23 for transmitting the modulated wave (high frequency) generated in the semiconductor component 3 to the object as a transmitting wave, and a receiving antenna conductor layer 23 for receiving the reflected wave that the transmitting wave transmitted from the transmitting antenna hits the object and is reflected as a receiving wave. In the high-frequency conductor layers 21 and 22, there are a high-frequency conductor layer connected to the transmitting antenna conductor layer 23 and a high-frequency conductor layer connected to the receiving antenna conductor layer 23. The antenna conductor layer 23 of this embodiment is provided on the back surface 202 of the base material 2. Any one of the antenna conductor layers 23 can also be used as the transmitting antenna conductor layer 23 or the receiving antenna conductor layer 23, and the transmitting antenna conductor layer 23 and the receiving antenna conductor layer 23 are shown with the same figure mark.

[0051] (High-frequency conductor layers 21, 22)

[0052] like Figure 2 As shown, the high-frequency conductor layers 21 and 22 are conductor layers for transmitting high-frequency signals. The conductor layers 20, 21 and 22 including the high-frequency conductor layers 21 and 22 are composed of copper foils provided on the front surface 201 of the base material 2. In the high-frequency conductor layers 21 and 22 of this embodiment, there are high-frequency conductor layers for transmitting high-frequency signals from the semiconductor component 3 to the transmitting antenna conductor layer 23 and high-frequency conductor layers for transmitting high-frequency signals from the receiving antenna conductor layer 23 to the semiconductor component 3. The so-called inner end portions 211 and 221 of the high-frequency conductor layers 21 and 22 refer to the ends of the high-frequency conductor layers 21 and 22 that are opposite to the bottom surface 301 of the semiconductor component 3. The so-called outer end portions 212 and 222 of the high-frequency conductor layers 21 and 22 refer to the ends of the high-frequency conductor layers 21 and 22 that are opposite to the inner end portions 211 and 221, and are ends located away from the semiconductor component 3.

[0053] like Figure 1 and Figure 2 As shown, all of the plurality of high-frequency conductor layers 21 and 22 are arranged on the base material 2 in a manner biased from the semiconductor component 3 toward the first direction D1. The plurality of high-frequency conductor layers 21 and 22 include: a plurality of first high-frequency conductor layers 21 extending from the first side surface 302A of the semiconductor component 3 along the first direction D1, and a plurality of second high-frequency conductor layers 22 extending from a pair of second side surfaces 302B orthogonal to the first side surface 302A in the semiconductor component 3 toward the outside of the second direction D2 and bending toward the first direction D1. The plurality of second high-frequency conductor layers 22 are arranged on both sides of the second direction D2 sandwiching the plurality of first high-frequency conductor layers 21. All of the outer end portions 212 and 222 of the first high-frequency conductor layer 21 and the second high-frequency conductor layer 22 are located on the first direction D1 side of the first side surface 302A of the semiconductor component 3.

[0054] With these structures, the high-frequency conductor layers 21 and 22 can be collectively arranged in a state of being biased in the first direction D1, thereby achieving miniaturization of the device.

[0055] like Figure 3 As shown, any one of the plurality of first high-frequency conductor layers 21 and the plurality of second high-frequency conductor layers 22 can be connected to the transmitting antenna conductor layer 23, and any one of them can be connected to the receiving antenna conductor layer 23. The antenna conductor layer 23 connected to the first high-frequency conductor layer 21 of this embodiment is arranged from the first high-frequency conductor layer 21 toward the third direction D3 on the opposite side of the first direction D1. The antenna conductor layer 23 connected to the second high-frequency conductor layer 22 of this embodiment is arranged from the second high-frequency conductor layer 22 toward the first direction D1. In each antenna conductor layer 23, an extended protrusion 232 is formed that extends from a main body 231 arranged along the first direction D1 to both sides of the second direction D2.

[0056] According to these structures, the antenna conductor layer 23 on the back surface 202 of the base material 2 can be appropriately arranged in a limited space.

[0057] like Figure 2 As shown in FIG. 3 , the first high-frequency conductor layer 21 adjacent to the second high-frequency conductor layer 22 extends from the first side surface 302A along the first direction D1 and bends outward in the second direction D2 toward the second high-frequency conductor layer 22. More specifically, the first high-frequency conductor layer 21 adjacent to the second high-frequency conductor layer 22 located on the right side in the second direction D2 (at Figure 2 ) extends from the first side surface 302A along the first direction D1, and bends toward the right side, which is the outer side of the second direction D2, toward the second high-frequency conductor layer 22 on the right side. In other words, the first high-frequency conductor layer 21 located on the right side of the second direction D2 of this embodiment is formed to extend from the first side surface 302A along the first direction D1 near the inner end 211, bend toward the right side of the second direction D2 at the middle part between the inner end 211 and the outer end 212, and extend along the first direction D1 near the outer end 212. In addition, the right side of the second direction D2 is Figure 2 on the right side of the .

[0058] According to this structure, a space for applying the adhesive 4 can be formed between the first high-frequency conductor layer 21 on the right side in the second direction D2 and the second high-frequency conductor layer 22 on the right side in the second direction D2 on the front surface 201 of the base material 2 .

[0059] In addition, the first high-frequency conductor layer 21 located on the left side in the second direction D2 (at the left side in the second direction D2) adjacent to the second high-frequency conductor layer 22 located on the left side in the second direction D2 Figure 2) extends from the first side surface 302A along the first direction D1, and bends toward the outside of the second direction D2 toward the second high-frequency conductor layer 22 on the left side. In other words, the first high-frequency conductor layer 21 located on the left side of the second direction D2 of this embodiment is formed to extend from the first side surface 302A along the first direction D1 near the inner end 211, bend toward the left side of the second direction D2 at the middle part between the inner end 211 and the outer end 212, and extend along the first direction D1 near the outer end 212.

[0060] According to this structure, a space for applying the adhesive 4 can be formed between the first high-frequency conductor layer 21 on the left side in the second direction D2 and the second high-frequency conductor layer 22 on the left side in the second direction D2 on the front surface 201 of the base material 2 .

[0061] The first high-frequency conductor layer 21 located in the center of the second direction D2 between the first high-frequency conductor layer 21 on the right side of the second direction D2 and the first high-frequency conductor layer 21 on the left side of the second direction D2 (in the middle of the second direction D2) Figure 2 ) is linearly extended in the first direction D1.

[0062] like Figure 1 and Figure 2 As shown, at least two or more outer end portions 212, 222 of all high-frequency conductor layers 21, 22 are arranged along the second direction D2 perpendicular to the first direction D1 in the plane of the front surface 201 of the base material 2. In this embodiment, the outer end portions 212, 222 of all high-frequency conductor layers 21, 22 are arranged in a row along the second direction D2 perpendicular to the first direction D1 in the plane of the front surface 201 of the base material 2.

[0063] According to this configuration, the antenna conductor layer 23 can be connected to the outer ends 212 and 222 of the plurality of high-frequency conductor layers 21 and 22 aligned in a row. Therefore, the formation length of the antenna conductor layer 23 can be appropriately managed and the antenna conductor layer 23 can be compactly arranged in a limited space.

[0064] A grounding conductor layer 24 is provided around the high-frequency conductor layers 21 and 22 in the front surface 201 of the base material 2. The grounding conductor layer 24 surrounds the high-frequency conductor layers 21 and 22 and is connected to the ground. The grounding conductor layer 24 is arranged at the ends of the high-frequency conductor layers 21 and 22 and the entire circumference within the plane of the front surface 201 on both sides. According to this structure, the attenuation of the intensity of the high-frequency signal in the high-frequency conductor layers 21 and 22 can be suppressed. Figure 2 In FIG. 1 , the high-frequency conductor layers 21 and 22 are surrounded from both sides by the ground conductor layer 24 having the resist layer 25 provided on the surface.

[0065] In order to prevent unnecessary attenuation of high-frequency signals, the outer ends 212, 222 of the high-frequency conductor layers 21, 22 of this embodiment are also connected to the ground conductor layer 24 and to the antenna conductor layer 23. The outer ends 212, 222 may be formed as the ends 241 of the ground conductor layer 24 arranged in a row along the second direction D2.

[0066] (Other conductor layers 20)

[0067] like Figure 2 As shown, various conductor layers 20 other than the high-frequency conductor layers 21 and 22 are provided on the front surface 201 of the base material 2. Electronic components and the like electrically connected to the semiconductor component 3 are arranged on the front surface 201 or the back surface 202 of the base material 2. The conductor layers 20 other than the high-frequency conductor layers 21 and 22 are used to electrically connect the semiconductor component 3 to the electronic components. The conductor layers 20 other than the high-frequency conductor layers 21 and 22 are arranged on the front surface 201 of the base material 2 in a space on the third direction D3 side opposite to the space on the first direction D1 side where the high-frequency conductor layers 21 and 22 are arranged. In other words, the conductor layers 20 other than the high-frequency conductor layers 21 and 22 are arranged on the front surface 201 of the base material 2 from the third side surface 302C on the opposite side to the first side surface 302A of the semiconductor component 3 and the third direction D3 side of the pair of second side surfaces 302B to the outside.

[0068] like Figure 6 to Figure 8 As shown, on the front surface 201 of the base material 2, a resist layer 25 is provided on the surface of the remaining conductor layer 20 except the high-frequency conductor layers 21 and 22 and the surface of the ground conductor layer 24, and the resist layer 25 serves as a protective film for protecting the copper foil constituting the conductor layer 20 or the ground conductor layer 24. In order to suppress attenuation of the intensity of the high-frequency signal, the resist layer 25 is not provided on the surface of the high-frequency conductor layers 21 and 22 and the antenna conductor layer 23. Figure 6 to Figure 8 The diagram is a schematic diagram showing a cross section orthogonal to the first direction D1 or the second direction D2.

[0069] (Conductive member 35)

[0070] like Figure 6 to Figure 8 As shown, the conductive component 35 is also called a bump, etc., and is composed of a solder material, etc., for electrically connecting the conductor portion of the semiconductor component 3 to the conductor layers 20, 21, 22. The conductive component 35 is provided in the conductor portion of the bottom surface 301 of the semiconductor component 3, and when the semiconductor component 3 is arranged on the base material 2, the conductive component 35 contacts the conductor layers 20, 21, 22 of the base material 2 and is bonded to the conductor layers 20, 21, 22.

[0071] (Semiconductor component 3)

[0072] like Figure 6 to Figure 8 As shown, the semiconductor component 3 has a circuit portion 31 that generates a high-frequency signal, a molded resin portion 32 composed of a resin covering the circuit portion 31, and a bottom surface resin portion 33 provided on a bottom surface 301 of the semiconductor component 3. In the circuit portion 31, semiconductor elements are formed: a synthesizer that generates a high-frequency signal, a mixer that mixes a transmission wave and a reception wave, an analog / digital converter that converts an analog signal into a digital signal, a digital signal processor that analyzes a digital signal, and the like.

[0073] The bottom surface resin portion 33 is made of a material different from that of the molded resin portion 32, and is made of a resin having a lower elastic modulus than that of the molded resin portion 32. The molded resin portion 32 and the bottom surface resin portion 33 are made of a thermosetting resin or the like. The elastic modulus indicates the ease with which an object can be deformed. The elastic modulus E is expressed by E=σ / ε, and is a value obtained by dividing the stress σ applied to an object by the strain ε generated in the object. The bottom surface resin portion 33 is easily deformed due to its low elastic modulus and is difficult to be restrained by the adhesive 4.

[0074] like Figure 4 As shown, the semiconductor component 3 is formed into a rectangular parallelepiped shape, having a bottom surface 301 opposite to the front surface 201 of the base material 2, a top surface 303 located on the opposite side of the bottom surface 301, and four side surfaces 302A, 302B, and 302C located between the bottom surface 301 and the top surface 303. The semiconductor component 3 is formed into a plate shape, and the bottom surface 301 and the top surface 303 have the largest area.

[0075] The arithmetic mean roughness Ra of the surface roughness of the resin constituting the base material 2 is within the range of 0.4 to 0.6 [μm], and the maximum height Rz of the resin constituting the base material 2 is within the range of 2 to 3 [μm]. The arithmetic mean roughness Ra of the resin constituting the molded resin portion 32 of the semiconductor component 3 is within the range of 0.6 to 1.0 [μm], and the maximum height Rz of the resin constituting the molded resin portion 32 of the semiconductor component 3 is within the range of 3 to 6 [μm]. When the arithmetic mean roughness Ra and the maximum height Rz of the front surface 201 of the base material 2 and the molded resin portion 32 of the semiconductor component 3 are within the above ranges, the adhesive 4 can be easily bonded to the base material 2 and the molded resin portion 32.

[0076] (Adhesive 4)

[0077] like Figure 4 and Figure 5As shown, the adhesive 4 strengthens the bonding state of the conductor part of the semiconductor component 3 to the conductor layers 20, 21, 22 of the base material 2 through the conductive component 35, and prevents the displacement of the semiconductor component 3 relative to the base material 2. The adhesive 4 is composed of a curable resin that is almost not plastically deformed even when heated. In the adhesive 4 of this embodiment, an epoxy resin is used as a thermosetting resin. The adhesive 4 can also be composed of a photocurable resin. In order to prevent the semiconductor component 3 from being displaced in the plane direction of the front surface 201 relative to the base material 2, the adhesive 4 is also provided on the side surfaces 302A, 302B, 302C of the semiconductor component 3.

[0078] like Figure 6 to Figure 8 As shown, the adhesive 4 is continuously provided from the bottom surface 301 of the semiconductor component 3 to the side surfaces 302A, 302B, and 302C, and the bottom surface 301 and the side surfaces 302A, 302B, and 302C of the semiconductor component 3 are bonded to the front surface 201 of the base material 2. In other words, the adhesive 4 is continuously provided from between the bottom surface 301 of the semiconductor component 3 and the front surface 201 of the base material 2 to the side surfaces 302A, 302B, and 302C of the semiconductor component 3. The adhesive 4 may also be in contact not only with the front surface 201 of the base material 2, but also with the surface of the resist layer 25 protecting the conductor layer 20 in the front surface 201 of the base material 2.

[0079] like Figure 4 As shown in FIG. 1 , the adhesive 4 of this embodiment is dispersedly provided around the four corners 301A of the bottom surface 301 of the semiconductor component 3. Specifically, the adhesive 4 contacts the four corners 301A of the bottom surface 301 of the semiconductor component 3, the side surfaces 302A, 302B, and 302C on both sides of the semiconductor component 3 adjacent to each of the four corners 301A, and the front surface 201 of the base material 2 around the opposing portions including the four corners 301A. According to this structure, the adhesive 4 is arranged in a balanced manner with respect to the semiconductor component 3, and the semiconductor component 3 can be stably supported with respect to the base material 2 by using a small amount of the adhesive 4. The adhesive 4 provided at each corner 301A of the bottom surface 301 of the semiconductor component 3 bonds the bottom surface 301 and the side surfaces 302A, 302B, and 302C of the semiconductor component 3 to the front surface 201 of the base material 2.

[0080] Around the four corners 301A of the semiconductor component 3, the linear continuous coating length L of the adhesive 4 along one side surface 302A, 302B, 302C in the plane direction of the front surface 201 of the base material 2 is set in the range of 0.5 to 1.2 mm. In the case where the continuous coating length L of the adhesive 4 is less than 0.5 mm, there is a concern that the adhesive 4 cannot sufficiently obtain the strength for bonding the semiconductor component 3 to the base material 2. In the case where the continuous coating length L of the adhesive 4 exceeds 1.2 mm, the range for setting the adhesive 4 becomes larger, making it difficult to set the semiconductor component 3 and the conductor layers 20, 21, 22 in a limited space.

[0081] The adhesive 4 does not contact the high-frequency conductor layers 21 and 22, and a gap of 0.1 mm or more is formed between the high-frequency conductor layers 21 and 22 and the adhesive 4. If the gap between the high-frequency conductor layers 21 and 22 and the adhesive 4 is less than 0.1 mm, the intensity of the high-frequency signal may be attenuated.

[0082] like Figure 4 as well as Figure 5 As shown, a part of the adhesive 4 continuously contacts the side surfaces 302A and 302B of the semiconductor component 3 from the front surface 201 of the base material 2 except for the formation portion of the plurality of high-frequency conductor layers 21 and 22 and the portion sandwiched by the first high-frequency conductor layer 21 and the second high-frequency conductor layer 22. According to this structure, the adhesive 4 can be provided at an appropriate position on the front surface 201 of the base material 2 avoiding contact with each high-frequency conductor layer 21 and 22.

[0083] A portion of the adhesive 4 extends continuously from a portion of the front surface 201 that includes the periphery of the portion opposing the corner 301A in the bottom surface 301 of the semiconductor component 3, excluding the portion where the plurality of high-frequency conductor layers 21 and 22 are formed, and that is sandwiched between the first high-frequency conductor layer 21 and the second high-frequency conductor layer 22, to the side surfaces 302A and 302B on both sides of the semiconductor component 3 adjacent to the corner 301A. By contacting a portion of the adhesive 4 with the side surfaces 302A and 302B on both sides adjacent to the corner 301A of the semiconductor component 3, displacement of the semiconductor component 3 in the planar direction toward the front surface 201 with respect to the base material 2 can be effectively prevented.

[0084] like Figure 6 to Figure 8As shown, in order to effectively prevent the displacement of the semiconductor component 3 in the plane direction toward the front surface 201 relative to the base material 2, it is preferred that the adhesive 4 is provided at a position as high as possible in the height direction H from the bottom surface 301 of the semiconductor component 3 to the side surfaces 302A, 302B, and 302C of the semiconductor component 3. When the thickness of the semiconductor component 3 in the height direction H perpendicular to the bottom surface 301 is set to T, the adhesive 4 is in contact within the range of the thickness from the bottom surface 301 to the side surface, which is greater than 1 / 3T and less than T. According to this structure, the displacement of the semiconductor component 3 in the plane direction toward the front surface 201 relative to the base material 2 can be effectively prevented.

[0085] When the thickness of the adhesive 4 in the height direction H in contact with the side surfaces 302A, 302B, and 302C ranges from the bottom surface 301 to less than 1 / 3T of the side surface, there is a concern that the displacement of the semiconductor component 3 in the planar direction toward the front surface 201 relative to the base material 2 cannot be fully suppressed.

[0086] like Fig. 9 As shown, the adhesive 4 may also be in continuous contact with the entire side surfaces 302A, 302B, 302C of the semiconductor component 3 in the height direction H, in other words, with the side surfaces 302A, 302B, 302C and the bottom surface 301 and the top surface 303 of the semiconductor component 3. The adhesive 4 may also be provided continuously from the side surfaces 302A, 302B, 302C of the semiconductor component 3 to the top surface 303 of the semiconductor component 3.

[0087] The adhesive 4 is in contact with the bottom surface resin portion 33 located on the bottom surface 301 and the side surfaces 302A, 302B, and 302C of the semiconductor component 3 and the molded resin portion 32 located on the side surfaces of the semiconductor component 3. The thickness of the bottom surface resin portion 33 in the semiconductor component 3 is very small, and the bottom surface resin portion 33 is provided within a range from the bottom surface 301 to a thickness less than 1 / 3T of the side surfaces 302A, 302B, and 302C.

[0088] The bottom surface resin portion 33 is easily deformed due to its low elastic modulus and is difficult to be restrained by the adhesive 4. On the other hand, the molded resin portion 32 is more easily restrained by the adhesive 4 than the bottom surface resin portion 33 due to its higher elastic modulus than the bottom surface resin portion 33. Therefore, by the adhesive 4 being in contact with not only the bottom surface resin portion 33 but also the molded resin portion 32, the effect of restraining the semiconductor component 3 by the adhesive 4 can be improved.

[0089] In order to constrain the side surfaces 302A, 302B, and 302C of the semiconductor component 3 to the highest possible position, the adhesive 4 of this embodiment has the highest viscosity possible, making it difficult to spread on the front surface 201 of the base material 2. In this embodiment, in order to indicate that the adhesive 4 does not spread much in the horizontal direction but remains in the vertical direction, the aspect ratio of the dimension in the height direction H of the adhesive 4 to the dimension in the first direction D1 or the second direction D2 is specified.

[0090] Generally, the aspect ratio is expressed by the ratio of the longitudinal dimension to the lateral dimension in the cross section. However, the adhesive 4 is partially provided on the bottom surface 301 and the side surfaces 302A, 302B, and 302C of the semiconductor component 3. Moreover, the aspect ratio varies depending on the cross section of the adhesive 4. Therefore, the aspect ratio of the adhesive 4 is not expressed by the value in the cross section, but is expressed by the ratio of the maximum value of the dimension in the height direction H of the portion in contact with the side surfaces 302A, 302B, and 302C in the total length in the height direction H of the adhesive 4 and the maximum value of the dimension in the first direction D1 or the second direction D2 in the total length in the lateral direction of the adhesive 4.

[0091] like Figure 6 to Figure 8 As shown, the aspect ratio Y / X of the adhesive 4 is defined as follows. The lateral dimension of the adhesive 4 is the maximum width X from the side surfaces 302A, 302B, 302C of the semiconductor component 3 to the end in the first direction D1 or the second direction D2 perpendicular to the side surfaces 302A, 302B, 302C of the adhesive 4 in contact with the front surface 201 of the base material 2. In addition, the maximum height of the adhesive 4 in contact with the side surfaces 302A, 302B, 302C of the semiconductor component 3 from the bottom surface 301 to the height direction H perpendicular to the bottom surface 301 is set to Y.

[0092] Moreover, the aspect ratio Y / X of the adhesive 4 is greater than or equal to 0.3. This aspect ratio Y / X=0.3 represents the value of the limit to which the adhesive 4 can extend on the front surface 201. When the aspect ratio Y / X of the adhesive 4 is less than 0.3, it is difficult to set the adhesive 4 as high as possible in the side surfaces 302A, 302B, and 302C of the semiconductor component 3. The aspect ratio Y / X of the adhesive 4 is preferably greater than or equal to 1.

[0093] like Figure 8 As shown in FIG. 1 , the adhesive 4 may also have the highest maximum height Y in the height direction H at the portion in contact with the side surfaces 302A, 302B, and 302C of the semiconductor component 3. Figure 6 or Figure 7As shown, the adhesive 4 may be highest in the height direction H at a location away from the location in contact with the side surfaces 302A, 302B, 302C of the semiconductor component 3. In this case, the maximum height Y of the adhesive 4 is also the maximum height at the location in contact with the side surfaces 302A, 302B, 302C of the semiconductor component 3.

[0094] The aspect ratio Y / X of the adhesive 4 can be increased by increasing the viscosity of the adhesive 4 when applied to the base material 2 and the semiconductor component 3. The viscosity of the adhesive 4 can be set, for example, in the range of 217 to 743 [Pa·s]. The adhesive 4 contains a resin component and a filler as a filler. The viscosity of the adhesive 4 is adjusted by adjusting the content of the filler in the adhesive 4. That is, the greater the content of the filler in the adhesive 4, the higher the viscosity of the adhesive 4.

[0095] As a value according to JIS K6800, the value of thixotropy of the adhesive 4 may also be 3.1 or more. Thixotropy is also called thixotropy, and is a measure of the property that viscosity decreases due to stirring and increases by leaving the mixture to stand after stirring. Thixotropy is expressed by the ratio of the viscosity in two states with different stirring speeds, and the greater the thixotropy, the greater the change in viscosity caused by stirring. In order to ensure fluidity, the value of thixotropy is 4.1 or less.

[0096] exist Figure 6 to Figure 9 , a structure for mounting a semiconductor component 3 on a base material 2 with adhesives 4 having different viscosities and different aspect ratios of the adhesives 4 is shown. Figure 6 , the aspect ratio Y / X of the adhesive is slightly larger than 0.3, and the adhesive 4 contacts a large area from the bottom surface 301 and the side surfaces 302A, 302B, 302C of the semiconductor component 3 to the front surface 201 of the base material 2. Fig. 9 , the adhesive 4 is shown to be arranged over the entire side surfaces 302A, 302B, and 302C of the semiconductor component 3 in the height direction H, and is provided from the bottom surface 301 of the semiconductor component 3 to a height reaching the top surface 303 . Figure 6 as well as Fig. 9 The adhesive 4 in the film reaches the surface of the resist layer 25 on the ground conductor layer 24 surrounding the high-frequency conductor layers 21 and 22 .

[0097] exist Figure 7, the aspect ratio Y / X of the adhesive 4 is about 0.5, and the adhesive 4 is blocked by the ground conductor layer 24 surrounding the high-frequency conductor layers 21 and 22 in the front surface 201 of the base material 2. In this case, a part of the adhesive 4 is blocked by the blocking portion 26 formed by the edge of the ground conductor layer 24 and the edge of the anti-etching layer 25 around the corner 301A of the bottom surface 301 of the semiconductor component 3 on the front surface 201 of the base material 2. According to this structure, the infiltration and diffusion of the adhesive 4 in the front surface 201 of the base material 2 is suppressed, and the adhesive 4 is prevented from contacting with the high-frequency conductor layers 21 and 22.

[0098] exist Figure 8 , the aspect ratio Y / X of the adhesive 4 is about 2, and the adhesive 4 is provided as high as possible on the side surfaces 302A, 302B, 302C of the semiconductor component 3. In this case, the adhesive 4 is also prevented from contacting the high-frequency conductor layers 21, 22.

[0099] The adhesive 4 may be provided in a dispersed manner around the four corners 301A of the bottom surface 301 of the semiconductor component 3, or may be provided in a dispersed manner around the four corners 301A of the bottom surface 301 of the semiconductor component 3. Fig.10 As shown, the bottom surface 301 and the side surfaces 302A and 302B are dividedly provided at the parts adjacent to the two sides of the four corners 301A of the bottom surface 301 of the semiconductor component 3. In addition, the breakwater protrusions for preventing the adhesive 4 from flowing out may be formed into a dam shape (a shape surrounding the corners 301A) by an inkjet printer or the like around the parts opposing the four corners 301A of the bottom surface 301 of the semiconductor component 3 in the front surface 201 of the base material 2. Furthermore, the adhesive 4 may also flow into the inner side of the breakwater protrusions.

[0100] (Application of Adhesive 4)

[0101] In this method, in order to prevent the adhesive 4 from adhering to the high-frequency conductor layers 21 and 22, the method of applying the adhesive 4 to the base material 2 and the semiconductor component 3 is also studied. After the conductive component 35 provided on the bottom surface 301 of the semiconductor component 3 is bonded to each conductor layer 20, 21, 22 of the base material 2, the adhesive 4 is ejected from the nozzle and applied around the semiconductor component 3 in the base material 2.

[0102] When applying the adhesive 4, in order to improve the problem of wire drawing caused by the adhesive 4 extending from the front end of the nozzle, after applying the adhesive 4 from the nozzle, the nozzle may be temporarily returned to the adhesive 4 so that the filaments fall on the adhesive 4. In this way, the filaments of the adhesive 4 can be prevented from contacting the high-frequency conductor layers 21 and 22. By preventing the adhesive 4 from contacting the high-frequency conductor layers 21 and 22, the attenuation of the intensity of the high-frequency signal caused by the high-frequency conductor layers 21 and 22 can be suppressed, in other words, the wiring loss of the high-frequency conductor layers 21 and 22 can be suppressed.

[0103] In order to improve the dispersion of coating, the adhesive 4 discharged from the nozzle may be applied from the side close to the high-frequency conductor layers 21 and 22 .

[0104] (Difference in linear expansion coefficient)

[0105] The components of the radar device 1, such as the base material 2, the conductor layers 20, 21, 22, the semiconductor component 3, the conductive component 35, and the adhesive 4, are made of different materials and have different linear expansion coefficients. When the radar device 1 is heated and cooled, thermal stress caused by the difference in linear expansion coefficients of the components acts on the semiconductor component 3.

[0106] (Effect)

[0107] In the radar device 1 of the present embodiment, the arrangement relationship between the high-frequency conductor layers 21 and 22 and the adhesive 4 with respect to the semiconductor component 3 has been studied.

[0108] The plurality of second high-frequency conductor layers 22 extend from the second side surface 302B of the semiconductor component 3 to the outside in the second direction D2 as a whole, and are bent toward the first direction D1 of the front surface 201 of the base material 2, and extend further in the first direction D1 than the first side surface 302A of the semiconductor component 3. Furthermore, all the outer end portions 212 of the first high-frequency conductor layers 21 and all the outer end portions 222 of the second high-frequency conductor layers 22 are arranged in a row along the second direction D2 on the first direction D1 side of the first side surface 302A of the semiconductor component 3.

[0109] According to this structure, the formation length of the plurality of high-frequency conductor layers 21 and 22 can be shortened as much as possible, reducing attenuation of the intensity of the high-frequency signal, and the plurality of high-frequency conductor layers 21 and 22 can be arranged compactly as a whole, thereby achieving miniaturization of the device.

[0110] In addition, the adhesive 4 is in contact with the four corners 301A of the bottom surface 301 of the semiconductor component 3, the side surfaces 302A, 302B, 302C adjacent to the four corners 301A, and the front surface 201 of the base material 2 except for the formation portion of the plurality of high-frequency conductor layers 21, 22. According to this structure, even when thermal stress caused by the difference in linear expansion coefficients of the components such as the base material 2, the conductor layers 20, 21, 22, the semiconductor component 3, the conductive component 35, and the adhesive 4 acts on the semiconductor component 3, the adhesive 4 can bear the side surfaces 302A, 302B, 302C of the semiconductor component 3. Therefore, the semiconductor component 3 cannot be displaced in the direction parallel to the front surface 201 of the base material 2 relative to the base material 2, and cracks can be avoided in the conductive component 35 and the like. In addition, the life of the conductive component 35 composed of the solder material can be extended.

[0111] Therefore, according to the radar device 1 of this embodiment, the arrangement relationship between the high-frequency conductor layers 21 and 22 and the adhesive 4 relative to the semiconductor component 3 can be appropriately set for the purpose of reducing attenuation of the high-frequency signal intensity, miniaturizing the device, and reducing cracks caused by thermal stress.

[0112] The radar device 1 of this embodiment is mounted on a vehicle as a vehicle-mounted radar monitoring system. In the vehicle-mounted environment, in order to avoid interference with other mounted items, the radar device 1 is also required to be further miniaturized. Moreover, in the vehicle-mounted environment, the effect brought by the radar device 1 in which the arrangement relationship between the high-frequency conductor layers 21 and 22 and the adhesive 4 is appropriately set is more significantly obtained. In addition, in the vehicle-mounted environment, since the radar device 1 is more strongly affected by heat, vibration, etc., the effect of preventing cracks from occurring in the conductive component 35, etc. is more significantly obtained.

[0113] <Implementation method 2>

[0114] This embodiment shows a radar device 1 in which the arrangement relationship between the high-frequency conductor layers 21 and 22 and the adhesive 4 is different from that in the first embodiment.

[0115] like Fig.11 As shown, the adhesive 4 may also be provided around the bottom surface 301 of the semiconductor component 3 except for the four corners 301A. In this case, the adhesive 4 is also bonded to the bottom surface 301 and the side surfaces 302A, 302B, 302C of the semiconductor component 3 and the front surface 201 of the base material 2. In this case, the amount of adhesive 4 used can be reduced, and the application of the adhesive 4 can be performed more simply.

[0116] In addition, the adhesive 4 may be provided at the four corners 301A of the bottom surface 301 of the semiconductor component 3 and the four sides of the bottom surface 301 of the semiconductor component 3 except for the portion where the high-frequency conductor layers 21 and 22 are provided. In this case, the adhesive 4 is also bonded to the bottom surface 301 and the side surfaces 302A, 302B, 302C of the semiconductor component 3 and the front surface 201 of the base material 2. In this case, the semiconductor component 3 can be bonded to the base material 2 more firmly by the adhesive 4.

[0117] like Fig.12 As shown, the high-frequency conductor layers 21 and 22 may be provided on the back surface 202 of the base material 2. In this case, the conductive component 35 from the bottom surface 301 of the semiconductor component 3 is electrically connected to the high-frequency conductor layers 21 and 22 on the back surface 202 of the base material 2 via the conductor portion provided in the through hole of the base material 2. In this case, the antenna conductor layer 23 may also be provided on the front surface 201 of the base material 2. In this case, the adhesive 4 is also bonded to the bottom surface 301 and the side surfaces 302A, 302B, and 302C of the semiconductor component 3 and the front surface 201 of the base material 2. In this case, the space on the front surface 201 of the base material 2 can be ensured, and the degree of freedom of arrangement of the antenna conductor layer 23 and the like is improved.

[0118] like Fig.13 As shown, the high-frequency conductor layer 28, which is a part of the plurality of high-frequency conductor layers 21 and 22, may not be arranged toward the first direction D1 of the front surface 201 and the back surface 202 of the base material 2. In this case, the high-frequency conductor layer group 27 composed of the plurality of high-frequency conductor layers 21 and 22 may be arranged toward the first direction D1 on the front surface 201 or the back surface 202 of the base material 2, and the remaining high-frequency conductor layers 28 may be arranged toward the second direction D2 or the third direction D3 on the front surface 201 or the back surface 202 of the base material 2. In addition, the outer ends 212 and 222 of the high-frequency conductor layers 21 and 22 in the high-frequency conductor layer group 27 may be arranged on the first direction D1 side of the first side surface 302A of the semiconductor component 3, and the outer ends of the remaining high-frequency conductor layers 28 may be arranged on the third direction D3 side of the first side surface 302A. In this case, there is a case where the degree of freedom of arrangement of the high-frequency conductor layers 21, 22, 28, the antenna conductor layer 23, etc. is improved.

[0119] The other structures, effects, etc. of the radar device 1 of this embodiment are the same as those of Embodiment 1. In this embodiment, components denoted by the same reference numerals as those in Embodiment 1 are also the same as those in Embodiment 1.

[0120] The radar device 1 may also be mounted on multiple locations of a vehicle. In this case, a plurality of radar devices 1 may be used to form a vehicle-mounted radar monitoring system. In addition, as a non-vehicle-mounted application, the radar device 1 may also be used in transportation vehicles such as trains and airplanes.

[0121] The present disclosure is not limited to the various embodiments, and different embodiments can be further constituted within the scope of the present disclosure. In addition, the present disclosure includes various modified examples, modified examples within the equivalent scope, etc. In addition, the structures in the various embodiments can also be combined. Moreover, the combination and mode of the various constituent elements envisioned by the present disclosure are also included in the technical concept of the present disclosure.

Claims

1. A radar device comprising: The base material has a plurality of conductor layers disposed on the front surface or the back surface, wherein the plurality of conductor layers include a plurality of high-frequency conductor layers for transmitting high-frequency signals; a semiconductor component that is opposed to the front surface of the base material, is in contact with the plurality of conductor layers in the base material via a conductive component, and generates a high-frequency signal; and Adhesive for bonding the semiconductor component to the front surface of the base material. The high-frequency conductor layer group is arranged from the inner end to the outer end of the front surface or the back surface by bending at least any one of the high-frequency conductor layers in the plane of the front surface or the back surface, wherein: The high-frequency conductor layer group is all of the plurality of high-frequency conductor layers or a part of the plurality of high-frequency conductor layers, the inner end portion is opposite to the bottom surface of the semiconductor component, and the outer end portion is located closer to the first direction side than a first side surface in the plurality of side surfaces of the semiconductor component that faces the first direction from the center portion in the plane of the front surface or the back surface to the edge portion, The adhesive is in contact with the front surface excluding the formation sites of the plurality of high-frequency conductor layers and the side surfaces of the semiconductor component.

2. The radar device according to claim 1, wherein: The plurality of high frequency conductor layers include: One or more first high-frequency conductor layers extending from the first side surface along the first direction; and One or more second high-frequency conductor layers extend from a pair of second side surfaces orthogonal to the first side surface to the outside of a second direction in the plane of the front surface and bend toward the first direction, wherein the second direction is orthogonal to the first direction. All of the outer end portions of the first high-frequency conductor layer and the second high-frequency conductor layer are located on the first direction side relative to the first side surface of the semiconductor component.

3. The radar device according to claim 1, wherein: The plurality of high-frequency conductor layers or the high-frequency conductor layer group comprises: One or more first high-frequency conductor layers extending from the first side surface along the first direction; and One or more second high-frequency conductor layers extend from a pair of second side surfaces orthogonal to the first side surface to the outside of a second direction in the plane of the front surface and bend toward the first direction, wherein the second direction is orthogonal to the first direction. A portion of the adhesive continuously contacts the side surface of the semiconductor component from a portion of the front surface of the base material excluding a portion where the plurality of high-frequency conductor layers are formed and sandwiched between the first high-frequency conductor layer and the second high-frequency conductor layer.

4. The radar device according to claim 2, wherein: The first high-frequency conductor layer adjacent to the second high-frequency conductor layer extends from the first side surface along the first direction and is bent outward in the second direction toward the second high-frequency conductor layer. A portion of the adhesive continuously contacts the side surfaces on both sides adjacent to the corner portion from the front surface surrounding the opposing portions of the bottom surface of the semiconductor component excluding the formation portions of the plurality of high-frequency conductor layers and including the portion sandwiched by the first high-frequency conductor layer and the second high-frequency conductor layer.

5. The radar device according to claim 3, wherein: The first high-frequency conductor layer adjacent to the second high-frequency conductor layer extends from the first side surface along the first direction and is bent outward in the second direction toward the second high-frequency conductor layer. A portion of the adhesive continuously contacts the side surfaces on both sides adjacent to the corner portion from the front surface surrounding the opposing portions of the bottom surface of the semiconductor component excluding the formation portions of the plurality of high-frequency conductor layers and including the portion sandwiched by the first high-frequency conductor layer and the second high-frequency conductor layer.

6. The radar device according to any one of claims 1 to 5, wherein: At least any one of the outer end portions of the plurality of high-frequency conductor layers or the high-frequency conductor layer group is arranged in a direction perpendicular to the first direction within a plane of the front surface of the base material.

7. The radar device according to any one of claims 1 to 5, wherein: The semiconductor component comprises: a circuit portion generating the high-frequency signal; a molded resin portion formed of a resin covering the circuit portion; and a bottom surface resin portion provided on the bottom surface of the semiconductor component and formed of a material different from that of the molded resin portion and formed of a resin having an elastic modulus lower than that of the molded resin portion. The adhesive is in contact with the bottom surface resin portion and the mold resin portion, wherein the bottom surface resin portion is located on the bottom surface and the side surface of the semiconductor component, and the mold resin portion is in contact with the side surface of the semiconductor component.

8. The radar device according to any one of claims 1 to 5, wherein: The outer end portions of the plurality of high-frequency conductor layers are connected to an antenna conductor layer provided on the front surface or the back surface of the base material.

9. The radar device according to any one of claims 1 to 5, wherein: On the front surface of the base material, a resist layer is provided on the surface of the remaining conductor layers except for the plurality of high-frequency conductor layers, and the resist layer protects the conductor layers. At least a portion of the adhesive is stopped by a stopper around a corner of the bottom surface of the semiconductor component on the front surface of the base material, and the stopper is formed by an edge of the conductor layer and an edge of the resist layer.

10. The radar device according to any one of claims 1 to 5, wherein: When the thickness of the semiconductor component in a direction perpendicular to the bottom surface is defined as T, the adhesive is in contact with the side surface over a thickness of 1 / 3T or more from the bottom surface to the side surface.

11. The radar device according to any one of claims 1 to 5, wherein: When the maximum width of the portion of the adhesive in contact with the front surface of the substrate from the side surface of the semiconductor component to the end in a direction perpendicular to the side surface is set as X, and the maximum height of the portion of the adhesive in contact with the side surface of the semiconductor component from the bottom surface of the semiconductor component to the direction perpendicular to the bottom surface is set as Y, The adhesive has an aspect ratio, ie, Y / X, of 0.3 or more.

12. The radar device according to any one of claims 1 to 5, wherein: The semiconductor component is formed into a rectangular parallelepiped shape. The adhesive contacts the four corners of the bottom surface of the semiconductor component, the side surfaces on both sides of the semiconductor component adjacent to each of the four corners, and the front surface of the base material including the periphery of the opposing portions of the four corners.

13. The radar device according to any one of claims 1 to 5, wherein: The outer end portions of all the high-frequency conductor layers of the plurality of high-frequency conductor layers are arranged in a direction perpendicular to the first direction within a plane of the front surface of the base material.

14. A vehicle equipped with the radar device according to any one of claims 1 to 13.

15. A radar monitoring system comprising the radar device according to any one of claims 1 to 13.

Images