Optoelectronic semiconductor component with individually controllable contact elements and method for producing an optoelectronic semiconductor component

Abstract

An optoelectronic semiconductor component (10) has a plurality of light emitting devices (15), each comprising a first resonator mirror (115), a second resonator mirror (120), an active region (110) and a second contact element (130). The active region (110) is arranged between the first and second resonator mirrors (115, 120) and is adapted to emit electromagnetic radiation (30). The second contact element (130) and a first contact element (125) which are electrically connected to a first semiconductor layer (111) of a first conductivity type of the light emitting device (15) are accessible from a first main surface (101) of the light emitting device. At least two of the second contact elements (130) are individually controllable, respectively.

Description

[0001] Surface-emitting lasers, which are laser devices in which the generated laser is emitted perpendicular to a surface arranged with semiconductor layers, can be used, for example, in 3D sensor systems, such as for facial recognition or for distance measurement in autonomous driving.

[0002] Efforts are underway to improve this type of surface-emitting laser.

[0003] The purpose of this invention is to provide an improved surface-emitting laser device.

[0004] According to the present invention, this objective is achieved by the subject matter and method of the independent claims.

[0005] According to the design, the optoelectronic semiconductor component has multiple light emitting devices. Each light emitting device includes a first resonant mirror, a second resonant mirror, an active region disposed between the first and second resonant mirrors and adapted to emit electromagnetic radiation, and a second contact element. This second contact element, in contact with a first contact element of a first conductivity type semiconductor layer electrically connected to the light emitting device, can make contact from the first main surface of the light emitting device. At least two second contact elements can be individually driven. This means that the second contact elements can be individually driven. According to a further design, the contact elements can also be driven in groups. These groups can each contain the same or different numbers of light emitting devices.

[0006] According to the design scheme, the optoelectronic semiconductor component also has a circuit arrangement, wherein the circuit is adapted to drive the second contact element of the light emitting device.

[0007] For example, the circuitry is arranged in a circuit board. The circuit board can be arranged adjacent to the first main surface.

[0008] For example, the first conductivity type can be p-type conductivity type.

[0009] According to the design, the optoelectronic semiconductor assembly also includes multiple optical elements arranged on the side of the light emitting device facing away from the first main surface. Here, at least two of the optical elements are designed differently, so that the emitted radiation is emitted in different spatial directions.

[0010] According to the design, the optical elements are arranged spaced apart from the second main surface of the light emitting device. This can be achieved using suitable spacers. The space between the optical elements and the second main surface can contain, for example, air or a transparent material, such as a polymer or oxide. In this way, the radiation emitted by each optoelectronic device can be further shaped or deflected. According to a further design, the optical elements can also be directly adjacent to the second main surface of the light emitting device.

[0011] According to the design, each optoelectronic device adjacent to a different optical element can be individually controlled. This allows for targeted illumination of different spatial regions, for example. Furthermore, different emission modes can be generated over time.

[0012] The optoelectronic semiconductor component may also have a first contact layer connected to the first semiconductor layer. The first contact layer may be disposed between the active region and the first resonant mirror.

[0013] Alternatively, the optoelectronic semiconductor assembly may include a first connecting wire adapted to connect the first semiconductor layers of adjacent light emitting devices to each other.

[0014] According to the design, the electronic device includes the optoelectronic semiconductor component and the detector as described above. Due to the special structure of the optoelectronic semiconductor component as described above, the detector can have a simpler structure. For example, the detector can have a single photosensitive surface.

[0015] A method for manufacturing an optoelectronic semiconductor assembly having multiple light-emitting devices includes forming a first resonant mirror, a second resonant mirror, an active region between the first and second resonant mirrors, and forming second contact elements. The active region is suitable for emitting electromagnetic radiation. The second contact elements and the first contact elements electrically connected to a first semiconductor layer of a first conductivity type of the light-emitting devices are capable of contacting a first main surface of the light-emitting devices. At least two of the second contact elements are individually controllable. This means that each second contact element can be individually or in groups.

[0016] For example, the first resonant mirror can be formed first, then the active region can be formed, and finally the second resonant mirror can be formed. Alternatively, the second resonant mirror can be formed first, then the active region can be formed, and finally the first resonant mirror can be formed.

[0017] The method may also include applying a circuit board to a first main surface of the light emitting device, wherein a circuit arrangement is disposed in the circuit board, the circuit distribution being adapted to drive a second contact element of the light emitting device.

[0018] According to the design scheme, the first resonant mirror, the second resonant mirror, and the active region are grown on the growth substrate and removed after the circuit substrate is applied.

[0019] After reading the following detailed description and reviewing the accompanying drawings, those skilled in the art will recognize the additional features and advantages.

[0020] The accompanying drawings are provided for understanding embodiments of the invention. The drawings illustrate embodiments and, together with the description, serve to explain these embodiments. Further design options and numerous anticipated advantages arise directly from the following detailed description. The elements and structures shown in the drawings are not necessarily drawn to scale relative to each other. The same reference numerals refer to the same or corresponding elements and structures.

[0021] Figure 1 A schematic cross-sectional view of an optoelectronic semiconductor assembly according to a design scheme is shown.

[0022] Figures 2A to 2D A schematic cross-sectional view of a further design scheme for an optoelectronic semiconductor component is shown.

[0023] Figure 3A and Figure 3B A vertical cross-sectional view of an optoelectronic semiconductor assembly according to a further design scheme is shown.

[0024] Figures 4A to 4G A cross-sectional view of a workpiece is shown when a method for manufacturing an optoelectronic semiconductor component is performed.

[0025] Figure 5 The methods based on the design scheme are summarized.

[0026] Figure 6 A schematic diagram of an electronic device according to a design scheme is shown.

[0027] In the following detailed description, reference is made to the accompanying drawings, which form a part thereof, and specific embodiments are illustrated by way of illustration. In this context, directional terms such as “top,” “bottom,” “front,” “back,” “above,” “up,” “in front,” and “back” are related to the orientation of the figures just described. Because the components of the embodiments can be positioned in different orientations, the directional terms are used for explanatory purposes and not for limitation.

[0028] The description of the embodiments is not limiting, as other embodiments exist and structural or logical changes can be made without departing from the scope of the claims. In particular, unless the context otherwise requires, elements of the embodiments described below can be combined with elements of other embodiments described.

[0029] The terms "wafer" or "semiconductor substrate" as used in the following description can include any semiconductor-based structure having a semiconductor surface. Wafers and structures are understood to include doped and undoped semiconductors, epitaxial semiconductor layers optionally supported by a base substrate, and other semiconductor structures. For example, a first semiconductor material layer can be grown on a growth substrate of a second semiconductor material such as a GaAs substrate, a GaN substrate, or a Si substrate, or an insulating material such as a sapphire substrate.

[0030] Depending on the intended use, semiconductors can be based on direct or indirect semiconductor materials. Examples of semiconductor materials particularly suitable for generating electromagnetic radiation include nitride semiconductor compounds, such as GaN, InGaN, AlN, AlGaN, AlGaInN, AlGaBN, and phosphide semiconductor compounds, such as GaAsP, AlGaInP, GaP, AlGaP, InGaAsP, and other semiconductor materials such as GaAs, AlGaAs, InGaAs, AlInGaAs, SiC, ZnSe, ZnO, Ga2O3, diamond, hexagonal boron nitride, and combinations thereof. The stoichiometry of compound semiconductor materials can be varied. Other examples of semiconductor materials can include silicon, silicon-germanium, and germanium. In the context of this specification, the term "semiconductor" also includes organic semiconductor materials.

[0031] The term "substrate" typically includes insulating, conductive, or semiconductor substrates.

[0032] The terms “lateral” and “horizontal” as used in this specification are intended to describe an orientation or arrangement that is substantially parallel to a first surface of a substrate or semiconductor body. For example, this could be the surface of a wafer or chip (die).

[0033] For example, the horizontal direction can lie in a plane perpendicular to the growth direction during layer growth.

[0034] The term "vertical" as used in this specification is intended to describe an orientation that is substantially perpendicular to the first surface of the substrate or semiconductor body. For example, a vertical direction can correspond to the growth direction during layer growth.

[0035] With regard to the terms “having,” “containing,” “including,” etc., as used herein, these are open terms indicating the presence of the stated element or feature, but the presence of other elements or features does not exclude them. Indefinite and definite articles include both plural and singular forms unless the context clearly indicates otherwise.

[0036] In the context of this specification, the term "electrical connection" refers to a low-impedance electrical connection between connected components. Components in an electrical connection do not necessarily have to be directly connected to each other. Additional components can be arranged between the electrically connected components.

[0037] The term "electrical connection" also includes tunneling contact between connecting elements.

[0038] Figure 1A vertical cross-sectional view of a photoelectric semiconductor assembly according to a design is shown. The photoelectric semiconductor element 10 includes a plurality of light emitting devices 15. Each light emitting device 15 includes a first resonant mirror 115, a second resonant mirror 120, and an active region 110 disposed between the first and second resonant mirrors 115 and 120 and adapted to emit electromagnetic radiation 30. Each light emitting device also includes a second contact element 130. The second contact element 130 and a first contact element 125 electrically connected to a semiconductor layer of a first conductivity type of the light emitting device 15 are capable of contacting a first main surface 101 of the photoelectric semiconductor assembly 10. At least two of the second contact elements 130 of the plurality of light emitting devices 15 can be individually driven. For example, each light emitting device 15 in a group of light emitting devices can be individually driven. According to a further design, all light emitting devices 15 can also be individually driven.

[0039] Figure 1 The optoelectronic semiconductor assembly 10 shown represents a so-called VCSEL, namely a surface-emitting semiconductor laser with a vertical resonator (“vertical-cavity surface-emitting laser”). A layer stack 123, including layers for forming a second resonant mirror 120 and an active region 110, is structured into a plurality of mesa 114 by separation trenches 113. Here, the separation trenches 113 are arranged such that they extend, for example, in the x and y directions and define a plurality of mesa 114. For example, the mesa 114 can have a rectangular, square, hexagonal, or circular shape in top view. The individual mesa 114, and therefore the light emitting devices 15, can be arranged, for example, regularly, such as in rows and columns. According to further design options, they can also be arranged in a checkerboard pattern. According to further design options, they can also be arranged quasi-randomly. For example, the optoelectronic semiconductor assembly 10 can include more than 10 or more than 100 light emitting devices 15, for example, the number of light emitting devices 15 can be less than 100,000 or less than 50,000.

[0040] The separation trenches 113 are sized, for example, such that they separate the active regions 110 of adjacent light emitting devices 15. Furthermore, the layer used to form the second resonant mirror 120 is cut off by the separation trenches 113. Figure 1 As shown, according to the design scheme, the separation trench 113 does not cut through the layer of the first resonant mirror 115.

[0041] The semiconductor layer stack 123 can include a first semiconductor layer 111 of a first conductivity type, such as n or p, and a second semiconductor layer 112 of a second conductivity type, such as p or n. A first contact element 125 is connected to the first semiconductor layer 111 of the first conductivity type. A second contact element is connected to the second semiconductor layer 112 of the second conductivity type. An active region 110 is disposed between the first semiconductor layer 111 and the second semiconductor layer 112. The active region 110 can have, for example, a quantum well structure, such as a simple quantum well structure (SQW, single quantum well) or a multiple quantum well structure (MQW, multiple quantum well) for generating radiation. The term "quantum well structure" has no meaning in terms of quantization dimension here. Therefore, it specifically includes quantum wells, quantum wires, and quantum dots, as well as any combination of these layers.

[0042] The first resonant mirror 115 may have a first layer 115a of an alternating first component and a second layer 115b of a second component. The second resonant mirror 120 may also have alternating layers 120a and 120b, each layer having a different composition.

[0043] The alternating stacked layers of the first or second resonant mirrors 115, 120 each have different refractive indices. For example, these layers can alternately have high refractive indices (n>3.1) and low refractive indices (n<3.1) and are designed as Bragg reflectors.

[0044] For example, the layer thickness can be λ / 4 or a multiple of λ / 4, where λ represents the wavelength of light to be reflected in the corresponding medium. The first or second resonant mirror 115, 120 can have, for example, 2 to 50 individual layers. A typical layer thickness can be approximately 30 to 150 nm, for example, 50 nm. The layer stack can also contain one, two, or more layers thicker than approximately 180 nm, for example, thicker than 200 nm. For example, the second resonant mirror 120 can have a total reflectivity of 99.8% or higher for laser radiation. The first resonant mirror 115 can be designed as a decoupling mirror for radiation from the resonator and, for example, has a lower reflectivity than the second resonant mirror.

[0045] The electromagnetic radiation generated in the active region 110 can be reflected between the first resonant mirror 115 and the second resonant mirror 120, thereby forming a radiation field 21 in the active region of the resonator for generating coherent radiation (laser radiation) through induced emission. In general, the distance between the first and second resonant mirrors 115 and 120 corresponds to at least half of the effective emission wavelength (λ / 2h, where n corresponds to the refractive index of the active region), allowing standing waves to form inside the resonator. For example, the generated laser radiation 30 can be coupled to the output resonator via the first resonant mirror 115. The semiconductor laser device 10 thus forms a so-called VCSEL, i.e., a vertical-cavity surface-emitting laser.

[0046] According to the design, the layers for forming the alternating stacks of the first and / or second resonator mirrors 115, 120 can have semiconductor layers, where at least one layer is doped. For example, at least one semiconductor layer in the layer stack of the first resonator mirror 115 can be doped with a first conduction type, such as p-type or n-type. Correspondingly, at least one semiconductor layer of the second resonator mirror 120 can be doped with a dopant of a second conduction type different from the first conduction type, such as n-type or p-type.

[0047] According to a further design, at least the first or second resonator mirror 115, 120 can be specifically composed of dielectric layers. In this case, the layer stack 123 also has a first semiconductor layer (not shown) of the first conduction type and a second semiconductor layer (not shown) of the second conduction type. In this case, for example, the alternately arranged dielectric layers can alternately have a high refractive index (n>1.7) and a low refractive index (n<1.7), and are designed as a Bragg reflector.

[0048] For example, the semiconductor layers of the first resonator mirror and the second resonator mirror 115, 120 and the active region 110 can be based on an InGaAlP material system and include semiconductor layers with an InxGayAli-x-yP composition where 0<x, y<1 and x + y<1.

[0049] According to a further design, the semiconductor layers of the first resonator mirror and the second resonator mirror 115, 120 and the active region 110 can be based on an AlGaAs layer system and each contain a layer with a composition of AlxGai-xAs, where 0<x<1.

[0050] The emission wavelength of the optoelectronic semiconductor component 10 can be, for example, less than 1000 nm. For example, the wavelength can be greater than 800 nm.

[0051] Figure 1 The illustrated light-emitting devices 15 are not, for example, connected in parallel, and the second contact elements 130 are, for example, isolated from each other. As a result, the light-emitting devices 15 can be driven separately. According to the design, the semiconductor layers of the second conduction type of each light-emitting device 15 can be connected to each other through the first contact layer 118. For example, the first contact layer 118 can be arranged between the active region 110 and the first resonator mirror 115, as Figure 1 shown. For example, the first contact layer 118 can be a highly doped semiconductor layer of the first conduction type. For example, the first contact layer 118 can have a very high lateral conductivity. The material of the first contact layer 118 is, for example, GaAs or InGaAs. According to Figure 1 the shown design, the first conduction type can be the n conduction type. The substrate 100 can be a growth substrate for growing the semiconductor layer stack 123. For example, the substrate 100 can be a GaAs substrate.

[0052] like Figure 1 As shown, the layer of the first resonant mirror 115 can be disposed above the growth substrate 100. For example, the layer of the first resonant mirror 115 can be doped with a first conductivity type. The first contact layer 118 can be disposed above the first resonant mirror 115. The layer of the active region 110 is disposed above the first contact layer 118, followed by the layer of the second resonant mirror 120. For example, the layer of the second resonant mirror 120 can be doped with a second conductivity type.

[0053] An embedded insulating layer, such as oxide layer 126, can be arranged in the edge region of mesa 114, thereby forming an aperture 127 in the central region of mesa 114 in each case. This aperture 127 generates a cluster of charge carriers and an optical enclosure of the generated electromagnetic power.

[0054] The separation trench 113 can extend to the top side of the first contact layer 118. For example, the separation trenches can be filled with an insulating material, or they can be filled with a conductive material that is insulated from adjacent mesa surfaces by the insulating material. Figure 1 As shown, the first connecting element 124 can be connected to the first contact layer 118. The first connecting element 124 can be connected to the first contact element 125 via a conductive filler 135 (e.g., a metal filler). The first contact element 125 and a plurality of second contact elements 130 are all arranged on the first main surface 101 of the optoelectronic semiconductor assembly. In this way, each light emitting device 15 can be driven by the first main surface 101 of the optoelectronic semiconductor assembly. According to a further design, the contact trench 113 can also extend deeper into the semiconductor layer stack 123. For example, the electrical connection of the semiconductor layer of the first conductivity type can also be achieved by an alternative structure.

[0055] By filling the separation trench 113, particularly stable optoelectronic semiconductor components, especially planar parallel and compact optoelectronic semiconductor components, can be manufactured. By filling the separation trench 113 with insulating material, the risk of short circuits between light emitting devices 15 is reduced.

[0056] Figure 2A A schematic cross-sectional view of an optoelectronic semiconductor assembly according to a further design scheme is shown. Besides... Figure 1 In addition to the components shown, Figure 2A The optoelectronic semiconductor component 10 shown also includes circuits 1421, 1422, ... 142 n The arrangement of these circuits is such that they are respectively adapted to drive the second contact element 130 of the optical emitting device 15 for use as... Figure 2AAs shown, each of these circuits is assigned to exactly one light emitting device. For example, the circuit arrangement can be arranged or formed in a circuit board. For example, circuit board 140 can include a semiconductor substrate, for example, made of silicon, in which the various switching elements are implemented. For example, circuits 1421 and 1422 can be designed as integrated circuits, such as CMOS circuits (Complementary Metal-Oxide-Semiconductor). The driving circuits or driver circuits, in addition to serving as power supplies for the various light emitting devices 15, also fulfill additional functions. For example, they can include shift registers, memory cells, or digital data interfaces. Depending on the design, algorithms for evaluating detector signals (time-to-digital converter, histogram processing) can be integrated.

[0057] Furthermore, the corresponding supply line to the first contact element 125 can also be implemented as a common connection conductor 147 in the circuit board 140. The common connection conductor 147 can, for example, be connected to a first connection area 146, which is connected to the first contact element 125. Circuits 1421, 1422, ... 142 are arranged therein. n The circuit components or circuit board 140 can be arranged adjacent to the first main surface 1 of the light emitting device.

[0058] In this way, optoelectronic semiconductor components can be implemented in a particularly compact manner. As a result, extremely compact VCSEL emitters can be provided. Furthermore, individual light-emitting devices can be driven separately via short connecting wires, thereby avoiding the generation of additional inductance or reducing inductance. In particular, any potential inductance does not cause frequency limitation. Consequently, extremely short pulses can be generated. For example... Figure 2A As shown, the generated electromagnetic radiation can be emitted through the growth substrate 100 and the second main surface 102 of the optoelectronic semiconductor component.

[0059] Because both the first and second contact elements can contact the first main surface of the light-emitting device, optoelectronic semiconductor components can be manufactured in a simple manner. For example, further semiconductor processing methods can be omitted after the optoelectronic device is bonded to the circuit board. As a result, process-related damage to the circuit device is avoided, for example.

[0060] Because the second contact elements can be individually driven, additional functions can be easily integrated into optoelectronic semiconductor components. Furthermore, the radiation power can be easily adjusted by purposefully operating a selected number of light emitting devices.

[0061] The first contact element 125 is connected to the semiconductor layer 111 of the first conductivity type, and the second contact elements 130 are all connected to the semiconductor layer 112 of the second conductivity type. According to the design, the first conductivity type can be n-type and the second conductivity type can be p-type. These designs simplify the manufacturing process. According to a further design, the first conductivity type can be p-type and the second conductivity type can be n-type. In these designs, CMOS circuits 1421, 1422, ... 142... n It is possible to drive optoelectronic devices through n-doped semiconductor regions, which can be achieved more efficiently.

[0062] according to Figure 2B The design shown also allows for the removal of the growth substrate 100. Since the layer stack 123 is connected to the circuit board 140, arrangement stability is achieved. This enables the realization of a thin-film flip-chip VCSEL assembly. Figure 2B Other components of the optoelectronic semiconductor assembly and Figure 2A The components of the optoelectronic semiconductor device 10 are similar. By removing the growth substrate from the thermal path, the array of light emitting devices 15 is cooled more effectively. For example, silicon has a much higher thermal conductivity than GaAs and can be used as a growth substrate material. As a result, the optoelectronic semiconductor device 10 can operate at a higher power density, which leads to an increased range. Furthermore, the optoelectronic semiconductor device 10 can operate over a wider temperature range. In addition, removing the growth substrate (e.g., GaAs) also enables the emission of electromagnetic radiation with wavelengths shorter than the wavelength corresponding to the bandgap of the growth substrate material (860 nm in the case of GaAs).

[0063] according to Figure 2C In the illustrated design, the electrical connection of the semiconductor layer of the first conductivity type of the light emitting device can be achieved through first connecting wires 149, which are arranged on the side of the semiconductor layer stack 123 facing away from the first main surface 101. In this case, for example, the first contact layer 118 can be manufactured very thin or can also be removed in the region of the optoelectronic semiconductor assembly. An insulating material 151 can be placed on each of the first connecting wires 149 to insulate them from the outside. For example, the first connecting wires 149 are arranged such that they each exist in a region where little light emission is expected. For example, the first connecting wires 149 can overlap with the separation trench 113 and the embedded insulating layer 126.

[0064] according to Figure 2D In the designs shown in 3A and 3B, the optoelectronic semiconductor assembly can additionally have a layer 156 for beam shaping. The beam shaping layer 156 can have, for example, multiple optical elements 1531, 1532, ..., 153. nOptical elements can be arranged on one side of the second main surface 102 of the optoelectronic semiconductor assembly. According to the design, optical elements 1531, 1532, ..., 153... n They are designed differently, thus enabling the emission of electromagnetic radiation at correspondingly different spatial angles. For example, optical elements 1531, 1532, ..., 153 n These elements can be integrated into the transparent carrier 154 to form a multi-lens array. In this way, the beam-shaping layer 156 can be easily connected to the semiconductor layer stack 123. It includes optical elements 1531, 1532, ..., 153. n The transparent carrier 154 can be applied such that an air gap 155 is formed between the layer stack 153 and the transparent carrier 154. This allows for further adjustment of the emission characteristics of the optoelectronic semiconductor device. According to further design options, the air gap 155 can also be filled with an insulating transparent material, such as a polymer or oxide. Therefore, Figure 2D The arrangement shown enables the use of associated circuits 1421, 1422, ... 142 n Each optoelectronic device with different emission characteristics can be selectively driven. For example, each optoelectronic device or group of them with different emission characteristics can be powered sequentially. This improves the spatial resolution of the detector that detects the radiation from optoelectronic semiconductor components. Furthermore, the detector can be significantly simplified, thereby reducing the overall system cost and the required space. The detector can even have only a single photosensitive surface and still be able to record three-dimensional images by sequentially powering the optoelectronic devices.

[0065] Typically, the beam-shaping layer 156 described in the context of this specification can include refractive optics, such as a multi-lens array, or diffractive optics, such as a metallic lens. The beam-shaping layer 156 can be applied in a tailored manner to a separately manufactured wafer, for example, made of glass, quartz, silicon, or other suitable materials. According to further design options, the beam-shaping layer 156 can be made from a liquid resin (spin-coated glass, silicone, epoxy, acrylate, polyurethane, polycarbonate, polybenzocyclobutene) by molding or multiphoton absorption.

[0066] Figure 3A A schematic cross-sectional view of an optoelectronic semiconductor assembly according to a further design scheme is shown. Figure 2D The design shown differs in that the conductive fillers 135 in the separation trench 113 are connected to each other via first connecting elements 124. This improves the electrical connectivity between the portions of the first conductive semiconductor layer of each light emitting device. The first connecting elements 124 form a grid extending along the x-direction in front of and behind the plane shown.

[0067] according to Figure 3A The design shown includes a beam shaping layer 156, for example, having multiple optical elements 1531, 1532, ..., 153. n The transparent carrier 154 is directly adjacent to or spaced apart from the semiconductor layer stack 123 by a spacer 152. The spacer 152 can be made of conductive or insulating material and is arranged such that the area emitting electromagnetic radiation is exposed and not covered by the spacer 152. In this way, an interface is formed between the adjacent medium and the air gap, which further affects the optical characteristics of the light emitting device. Here, it is also possible to design the individual optical elements 1531, 1532, ..., 153 separately. n .

[0068] according to Figure 3B In the illustrated design, a portion of the conductive filler 135 in the connection trench 116 that connects the first connecting element 124 to the first contact element 125 can be replaced by an insulating material 157. This, for example, reduces mechanical stress within the optoelectronic semiconductor assembly. In particular, such mechanical stress can cause considerable wafer bending when individual optoelectronic semiconductor elements are fabricated at the wafer level, making the fabrication of these elements more difficult. Therefore, filling the edge regions of the connection trench 116 with potting material or spin-coated glass is advantageous. Electrical contact is also achieved by the conductive filler 135 having a smaller horizontal dimension. Figure 3B As shown, each of the separation trenches 113 is filled with insulating material 157. The fact that each of the separation trenches 113 is filled with insulating material 157 results in the additional advantage of being able to avoid short circuits between individual platform 114.

[0069] The following describes in more detail the method for manufacturing optoelectronic semiconductor components according to the design scheme.

[0070] Figure 4AA schematic cross-sectional view of workpiece 108 is shown when this method is performed. A semiconductor layer stack 123 is applied to a growth substrate 100, such as a GaAs substrate. In the context of this specification, the layer stack deposited over the growth substrate 100 is generally referred to as the “semiconductor layer stack” 123. Materials other than semiconductor materials can also be arranged in this semiconductor layer stack 123. For example, layers for constructing the first resonant mirror 115 and the first contact layer 118 can be arranged in the semiconductor layer stack 123. Furthermore, layers for forming the active region 110 and layers for forming the second resonant mirror 120 are arranged in the semiconductor layer stack 123. Depending on the design, the first contact layer 118 can be very thin or absent. The first main surface 101 of the semiconductor layer stack 123 represents the first main surface of the optoelectronic semiconductor assembly and is not covered. For example, a first semiconductor layer of a first conductivity type, such as n-type, can be included in the region of the first resonant mirror 115. The layers of the second resonant mirror 120 can include one or more second semiconductor layers of a second conductivity type, such as p-type.

[0071] According to the alternative design scheme ( Figure 4B The first conductivity type layer can be p-conductive and the second conductivity type layer can be n-conductive. In this case, for example, a semiconductor layer stack 123 can be grown first on a growth substrate, thereby growing an n-type layer first and then a p-type layer. The generated semiconductor layer stack 123 can then be applied to a processing carrier 107, such as a silicon carrier, and connected thereto by a bonding material 105. As a result, a p-type layer is located between the active region 110 and the processing carrier 107. In this design, for example, circuits applied later can control individual optoelectronic devices via n-contacts, which can be achieved more efficiently.

[0072] from Figure 4A The structure shown begins with the formation of separation trenches 113 within the semiconductor layer stack 123, as described above. Figure 4C As shown, a large number of mesa 114 are constructed. Separation trenches 113 extend, for example, in the x and y directions. In addition to the structuring of the separation trenches 113, connection trenches 116 are defined, which, for example, expose the first contact layer 118 in the region, such as the edge region of an electronic semiconductor element. Contact with a first semiconductor layer of a first conductivity type can be made via the connection trenches 116, for example, via the first contact layer 118. For example, the semiconductor layer stack 123 can additionally include an etch stop layer (not shown). For example, this can be disposed on the first contact layer 118.

[0073] In subsequent steps, a buried insulating layer 126 is formed in the edge region of the platform 114, for example as... Figure 4DAs shown. This defines an aperture 127 in the central region of each mesa. For example, the buried insulating layer can be an oxide layer. However, according to a further design, an insulating layer, such as a SiO2 layer, can also be formed on the first main surface 101 of each mesa, resulting in an aperture as well.

[0074] According to the design, a passivation layer 132 can then be formed, for example, from Al2O3, Si3N4, SiO2, or a combination of these materials. Furthermore, a second connection element 129 is formed on the first main surface 101 of the layer stack 123. Additionally, a first connection element 124 is formed over the first contact layer 118 in the region of the connection trench 116. For example, the first and / or second connection elements 124, 129 can be made of ZnO, gold, or AuGe.

[0075] According to the design, the separation trench 113 and the connection trench 116 are then filled with conductive filler 135. This can be achieved, for example, using an electric current method. Examples of materials for the conductive filler 135 include, for example, copper, gold, silver, nickel, or tungsten. Filling with conductive filler 135 achieves height compensation outside the light emitting device 15. Alternatively, as... Figure 3B As shown, height compensation can also be achieved using insulators such as SiO2, spin-coated glass (SOG), casting compounds or molding compounds, or other suitable insulating materials. For example, an insulating material can be applied to the connection trench 116 after the conductive filler 135 is deposited. After the insulating material is deposited, a planarization step can be performed, for example by chemical mechanical polishing (CMP).

[0076] Subsequently, as Figure 4G As shown, a passivation layer 137 is applied. Furthermore, openings are formed in the passivation layer 137. Subsequently, conductive material is filled into the openings. As a result, a first contact element 125 is formed in the region of the connecting trench 116. Furthermore, second contact elements 130 are all formed above the mesa 114. For example, the conductive material used to form the first and second contact elements 125, 130 can include gold, copper, or nickel. Furthermore, a CMP (chemical mechanical polishing) process can be performed. In this way, a very flat surface of the workpiece 108 is obtained. Therefore, in subsequent steps, the workpiece 108 can be connected to a circuit board 140, in which multiple circuits 1421, 1422, ... 142 are implemented. n .

[0077] like Figure 4G As shown, a first connection region 145 is arranged on the side of the circuit board 140 facing the workpiece 108. Furthermore, a large number of second connection regions 1461, 1462, ... 146 are also present. nArranged on this side. For example, the first and second connection areas can be made of gold, copper, or nickel. Circuits 1421, 1422, ... 142 n They can be connected to the second contact elements 1301, 1302, ... 130 respectively. n According to a further design, a circuit 1421 can also be connected to an associated second contact element in such a manner that a group of light emitting devices is driven by the circuit 1421.

[0078] In principle, workpiece 108 can be transferred via chip-to-wafer, wafer-to-wafer, or thin-film transfer methods, such as μ-transfer methods, with drive circuit 142 or drive circuits 1421, 1422, ... 142. n The arrangement and connection. For example, drive control circuits 1421, 1422, ... 142 n The arrangement can be connected to the workpiece at the wafer level. For example, connections can be made through a hybrid direct bonding method, thermoforming, or structured solder metal.

[0079] For example, the growth substrate 100 can be removed by grinding / polishing, wet or dry etching, or a combination of these methods.

[0080] As a result, for example, it is possible to obtain Figure 2A The optoelectronic semiconductor components shown are 2B, 3A, 3B, 2C, and 2D.

[0081] Figure 5 The method according to the design scheme is summarized. A method for producing an optoelectronic semiconductor assembly having multiple light emitting devices includes forming (S100) a first resonant mirror, a second resonant mirror, and an active region between the first and second resonant mirrors. The active region is suitable for emitting electromagnetic radiation. The method further includes forming (S130) a second contact element. The second contact element and the first contact element electrically connected to a first semiconductor layer of a first conductivity type of the light emitting device can contact from a first main surface of the light emitting device, and the second contact element can be individually driven. Here, the first resonant mirror can be formed first, then the active region can be formed, and finally the second resonant mirror can be formed. According to a further design scheme, the second resonant mirror can be formed first, then the active region can be formed, and finally the first resonant mirror can be formed.

[0082] Figure 6An electronic device 20 according to a design is shown. Electronic device 20 includes the optoelectronic semiconductor component 10 as described above. For example, the electronic device can be a sensor, such as a sensor for facial recognition or for distance measurement in autonomous driving. According to the design, electronic device 20 can also include a suitable detector device 25. For example, electromagnetic laser radiation emitted by the optoelectronic semiconductor component 10 can be reflected by an object 200. The reflected radiation can be detected by the detector 35. The object 200 can be, for example, a human face or a vehicle, or it can be the lens of a mobile phone or other electronic device. According to further designs, the object 200 can also be something else.

[0083] The electronic device 20 may also include circuitry 35 for processing the acquired measurement results. For example, circuitry 35 may be adapted to control various circuits 1421, 1422, ... 142 of the optoelectronic semiconductor assembly. n Alternatively, it can receive control signals from them. Furthermore, circuitry 35 can receive signals from sensor device 25 and extract information from or further process these signals. For example, electronic device 20 can be a ToF (“Time-of-Flight”) sensor or other sensors used to generate 3D information about an object. By selectively controlling a single laser or a group of lasers, as described above, to illuminate them in targeted directions in different spaces, the spatial resolution of the detector can be improved and / or the detector can be significantly simplified. In particular, depending on the design, the detector can even have only a single photosensitive surface and still map a space using sequential power-on of optoelectronic devices.

[0084] As a result, the system cost can be significantly reduced, and the installation space can be further minimized. Due to its compact design, the electronic device 20 can be adapted for mobile terminals such as mobile phones, PDAs (“Personal Digital Assistants”), etc. Furthermore, the electronic device 20 can be easily integrated into the vehicle's housing.

[0085] Although specific design solutions have been illustrated and described herein, those skilled in the art will recognize that various alternatives and / or equivalent configurations can be used instead of the illustrated and described designs without departing from the scope of the invention. This application is intended to cover any modifications or variations of the specific design solutions discussed herein. Therefore, the invention is limited only by the claims and their equivalents.

[0086] The various devices, arrangements, and manufacturing methods are listed in paragraphs below. The following paragraphs introduce different aspects and implementation schemes of the proposed principles and concepts, which can be combined in various ways.

[0087] Such combinations are not limited to the following:

[0088] 1. A photoelectric semiconductor assembly (10) having multiple light-emitting devices (15), wherein the light-emitting devices are respectively

[0089] Including the first resonant mirror (115),

[0090] The second resonant mirror (120) and the active region (110), the active region

[0091] Arranged between the first resonant mirror and the second resonant mirror (115, 120) and suitable for emitting electromagnetic radiation (30), and

[0092] Second contact element (130),

[0093] The second contact element (130) and the first contact element (125) are capable of contacting the first main surface (101) of the light emitting device, wherein the first contact element is electrically connected to the first semiconductor layer (111) of the light emitting device (15), and

[0094] At least two of the second contact elements (130) can be driven individually.

[0095] 2. The optoelectronic semiconductor component (10) according to paragraph 1 further comprises circuits (1421, 1422, ... 142...). n The circuits are arranged such that they are respectively adapted to drive the second contact element (130) of the light emitting device (15).

[0096] 3. The optoelectronic semiconductor assembly (10) according to paragraph 2, wherein the circuit (1421, 1422, ... 142...) n The arrangement of the components is arranged in the circuit board (140).

[0097] 4. The optoelectronic semiconductor assembly (10) according to paragraph 3, wherein the circuit substrate (140) is arranged adjacent to the first main surface (101).

[0098] 5. The optoelectronic semiconductor component (10) according to any one of the preceding paragraphs, wherein the first conductivity type is a p-conductivity type.

[0099] 6. The optoelectronic semiconductor assembly (10) according to any one of the preceding paragraphs further comprises a plurality of optical elements (1531, 1532, ... 153...). n These optical elements are arranged on the side of the light emitting device (15) opposite to the first main surface (101), wherein optical elements (1531, 1532, ... 153...) nAt least two optical elements in the device are designed differently, so that the emitted radiation is emitted in different spatial directions.

[0100] 7. The optoelectronic semiconductor assembly (10) according to paragraph 6, wherein the optical elements (1531, 1532, ... 153...) n The light emitting device (15) is arranged at a distance from the second main surface (102) of the light emitting device (15).

[0101] 8. The optoelectronic semiconductor assembly (10) according to paragraph 6 or 7, wherein, respectively, it is coupled with different optical elements (1531, 1532, ... 153...). n Adjacent photoelectric devices (15) can be driven and controlled individually.

[0102] 9. The optoelectronic semiconductor component (10) according to any one of the preceding paragraphs further comprises a first contact layer (118) connected to a first semiconductor layer (111), wherein the first contact layer (118) is disposed between the active region (110) and the first resonant mirror (115).

[0103] 10. The optoelectronic semiconductor assembly (10) according to any one of the preceding paragraphs further comprises a first connecting wire (149) adapted to connect the first semiconductor layers (111) of adjacent light emitting devices (15) to each other.

[0104] 11. An electronic device (20) having a photoelectric semiconductor assembly (10) and a detector (200) according to any one of the preceding paragraphs.

[0105] 12. The electronic device according to paragraph 11, wherein the detector (200) has a unique photosensitive surface (210).

[0106] 13. A method for manufacturing an optoelectronic semiconductor assembly (10) having multiple light emitting devices, the method comprising:

[0107] Forming (S100) one or more first resonant mirrors (115), second resonant mirrors (120), and an active region (110) between the first and second resonant mirrors (115, 120), wherein the active region (110) is suitable for emitting electromagnetic radiation (30), and

[0108] Forming (S130) a plurality of second contact elements (130),

[0109] The second contact element (130) and the first contact element (125) are capable of contacting the first main surface (101) of the light emitting device (15), and the first contact element is electrically connected to the first semiconductor layer (111) of the first conductivity type of the light emitting device.

[0110] The second contact element (130) can be individually driven.

[0111] 14. The method according to paragraph 13 further includes applying a circuit board (140) over the first main surface (101) of the light emitting device, wherein circuits (1421, 1422, ... 142) are arranged in the circuit board. n The circuits are arranged such that they are respectively adapted to drive the second contact element (130) of the light emitting device.

[0112] 15. The method according to paragraph 14, wherein the first resonant mirror and the second resonant mirror (115, 120) and the active region (110) are grown over a growth substrate (100), which is removed after the circuit board (140) is applied.

[0113] Reference number list

[0114] 10 Optoelectronic Semiconductor Components

[0115] 15. Light emitting device

[0116] 20 Electronic devices

[0117] 25 Sensor Equipment

[0118] 30 Emitted Radiation

[0119] 35 Processing Unit

[0120] 100 growth substrate

[0121] 101 First Primary Surface

[0122] 102 Second Main Surface

[0123] 105 Connecting Materials

[0124] 107 Processing Carrier

[0125] 108 workpieces

[0126] 110 Active Area

[0127] 111 First Semiconductor Layer

[0128] 112 Second Semiconductor Layer

[0129] 113 Separation trench

[0130] 114 Countertop

[0131] 115 First Resonant Mirror

[0132] 116 Connecting trench

[0133] 118 First Contact Layer

[0134] 120 Second Resonant Mirror

[0135] 123 layers stacked

[0136] 124 First connecting element

[0137] 125 First contact element

[0138] 126 Embedded insulation layer

[0139] 127 aperture

[0140] 129 Second connecting element

[0141] 130, 1301, 1302, ... 130 n Second contact element

[0142] 132 Passivation layer

[0143] 135 Conductive Filler

[0144] 137 Insulation Layer

[0145] 140 Circuit Board

[0146] 1421, 1422, ... 142 n circuit

[0147] 1451, 1452, ... 145 n Second connection area

[0148] 146 First Connection Area

[0149] 147 Common connection wire

[0150] 149 First connecting wire

[0151] 151 Insulation Materials

[0152] 152 gasket

[0153] 1531, 1532, ... 153 n Optical components

[0154] 154 Transparent Carrier

[0155] 155 air gap

[0156] 156 beam shaping layer

[0157] 157 Insulation Materials

[0158] 200 detectors

[0159] 210 Photosensitive surface.

Claims

1. A photoelectric semiconductor assembly (10) having multiple light-emitting devices (15), wherein the light-emitting devices are individually or jointly It has a first resonant mirror (115) and includes: The second resonant mirror (120) and the active region (110), the active region Arranged between the first resonant mirror and the second resonant mirror (115, 120) and suitable for emitting electromagnetic radiation (30). First semiconductor layer (111) of first conductivity type. The second semiconductor layer (112) of the second conductivity type, and The second contact element (130) is connected to the second semiconductor layer (112). The second contact element (130) and the first contact element (125) are capable of contacting the first main surface (101) of the light emitting device, wherein the first contact element is electrically connected to the first semiconductor layer (111) of the light emitting device (15). The first semiconductor layer (111) is disposed on the side of the active region (110) opposite to the first main surface (101), and is electrically connected to each other on the side of the active region (110) opposite to the first main surface (101). The light emitting device is configured to couple generated laser radiation (30) onto a second main surface (102) arranged on the side of the active region (110) opposite to the first main surface (101), and At least two of the second contact elements (130) can be individually driven. A first contact layer (118) electrically connecting the first semiconductor layers (111) to each other is disposed between the active region (110) of the light emitting device (15) and one or more of the first resonant mirrors (115) of the light emitting device (15). The optoelectronic semiconductor component (10) also has a separation trench (113) arranged between the light emitting devices (15). The light emitting device has a common first resonant mirror (115) that is not cut off by the separation trench (113), wherein the separation trench (113) is filled with insulating material (157).

2. The optoelectronic semiconductor component (10) according to claim 1 further comprises circuits (1421, 1422, ... 142...). n The circuits are arranged such that they are respectively adapted to drive the second contact element (130) of the light emitting device (15).

3. The optoelectronic semiconductor component (10) according to claim 2, wherein, The circuit (1421, 1422, ... 142) n The arrangement of the components is arranged in the circuit board (140).

4. The optoelectronic semiconductor component (10) according to claim 3, wherein, The circuit board (140) is arranged adjacent to the first main surface (101).

5. The optoelectronic semiconductor component (10) according to any one of the preceding claims, wherein, The first conductivity type is the n conductivity type.

6. The optoelectronic semiconductor assembly (10) according to any one of claims 1 to 4 further comprises a plurality of optical elements (1531, 1532, ... 153...). n The optical elements are arranged on the side of the light emitting device (15) opposite to the first main surface (101), wherein, The optical elements (1531, 1532, ... 153) n At least two optical elements in the device are designed differently, so that the emitted radiation is emitted in different spatial directions.

7. The optoelectronic semiconductor component (10) according to claim 6, wherein, The optical elements (1531, 1532, ... 153) n The light emitting device (15) is arranged at a distance from the second main surface (102) of the light emitting device (15).

8. The optoelectronic semiconductor component (10) according to claim 6, wherein, Each with different optical elements (1531, 1532, ... 153) n Adjacent photoelectric devices (15) can be driven and controlled individually.

9. The optoelectronic semiconductor component according to claim 6, wherein, The optical elements (1531, 1532, ... 153) n They share a common transparent carrier (154), thus these optical elements form a multi-lens array.

10. The optoelectronic semiconductor assembly (10) according to any one of claims 1 to 4 further comprises a first connecting wire (149) that electrically connects the first semiconductor layers (111) of adjacent light emitting devices (15) to each other.

11. The optoelectronic semiconductor component (10) according to claim 10, wherein, The connecting wire (149) is arranged on the second main surface (102).

12. An electronic device (20) having an optoelectronic semiconductor component (10) and a detector (200) according to any one of the preceding claims.

13. The electronic device according to claim 12, wherein, The detector (200) has a unique photosensitive surface (210).

14. A method for manufacturing a photoelectric semiconductor component (10) according to any one of claims 1 to 11, the method comprising: Form (S100) one or more first resonant mirrors (115), second resonant mirrors (120), an active region (110) between the first resonant mirrors and the second resonant mirrors (115, 120), a first semiconductor layer (111) and a second semiconductor layer (112) of the light emitting device (15), and a separation trench (113), such that the light emitting device is configured to couple and output generated laser radiation (30) through a second main surface (102) arranged on the side of the active region (110) opposite to the first main surface (101), wherein the separation trench (113) is filled with an insulating material (157). The first semiconductor layer (111) is electrically connected on the side of the active region opposite to the first main surface (101). Form (S130) the second contact element (130) and the first contact element (125), such that at least two of the second contact elements (130) can be driven individually, the first contact element being electrically connected to the first semiconductor layer (111) of the light emitting device and thus the first contact element and the second contact element can contact the first main surface (101) of the light emitting device (15).

15. The method of claim 14, further comprising applying a circuit board (140) over the first main surface (101) of the light emitting device, wherein circuits (1421, 1422, ... 142) are arranged in the circuit board. n The circuits are arranged such that they are respectively adapted to drive the second contact element (130) of the light emitting device.

16. The method according to claim 15, wherein, The first resonant mirror and the second resonant mirror (115, 120) and the active region (110) are grown over a growth substrate (100) which is removed after the circuit board (140) is applied.

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