A coating for improving the aluminum environment of a cavity and its deposition method
By depositing multiple layers of GaN and AlN on the cavity surface and combining this with a baking process, the problem of restoring the aluminum-rich state of the cavity was solved, thus improving the crystal surface quality of silicon-based LEDs.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- GUANGZHOU ZHONGTUO PHOTOELECTRIC TECH CO LTD
- Filing Date
- 2022-03-08
- Publication Date
- 2026-06-30
AI Technical Summary
Depositing high-quality GaN films on silicon substrates is difficult, and the cavity crystal deposition environment has a significant impact on silicon-based LEDs. How to restore the aluminum-rich state of the cavity to improve the surface cracking of LEDs is a key question.
By depositing multiple layers of GaN and AlN on the cavity surface, including baking, depositing GaN, p-GaN and AlN layers, and combining a secondary baking process, the coating adhesion is ensured to be strong and the adsorption of aluminum components in the cavity is increased.
This achieves an aluminum-rich cavity environment, providing a better cavity environment and improving the crystal surface quality for subsequent GaN or LED structure growth.
Abstract
Description
Technical Field
[0001] This invention belongs to the field of semiconductor materials technology, specifically relating to an epitaxial deposition method and epitaxial structure for improving the aluminum environment in a cavity. Background Technology
[0002] Silicon substrates are increasingly favored in semiconductor device applications due to their excellent electrical and thermal conductivity, high crystal quality, large size, low cost, and ease of processing. Furthermore, silicon technology is quite mature in the semiconductor industry. Using silicon as a substrate material for GaN epitaxial deposition is highly noteworthy because it offers the potential for integrating semiconductor devices with silicon devices. However, due to the lattice and thermal stress mismatch between GaN and silicon materials, depositing high-quality GaN thick films on silicon substrates is extremely difficult.
[0003] The crystal deposition environment of the reaction chamber has a significant impact on silicon-based LEDs. Generally, a relatively aluminum-rich environment is beneficial for the growth of silicon-based LEDs and can improve the surface cracking of LEDs. Therefore, how to quickly restore the aluminum environment of the chamber after maintenance to achieve an aluminum-rich state is a direction worthy of research. Summary of the Invention
[0004] In order to overcome the shortcomings of the prior art, one of the objectives of the present invention is to provide a coating deposition method that improves the aluminum environment of the cavity, which enables the aluminum components to adhere better to the cavity, stabilizes the deposition environment in the cavity, and puts the cavity in an aluminum-rich state.
[0005] The second objective of this invention is to provide a coating for a cavity that can be attached to the cavity, thereby producing a better aluminum-rich effect.
[0006] One of the objectives of this invention is achieved through the following technical solution:
[0007] A coating deposition method for improving the aluminum environment of a cavity includes the following steps:
[0008] 1) Bake the cavity;
[0009] 2) A first GaN layer is deposited on the surface of the baked cavity;
[0010] 3) Deposit a p-GaN layer on the first GaN layer;
[0011] 4) Turn off the MO source and introduce hydrogen gas to perform a second baking of the cavity;
[0012] 5) Deposit a second GaN layer on the p-GaN layer;
[0013] 6) Deposit an AlN layer on the second GaN layer.
[0014] Further, in step 1), the specific steps of baking are as follows: turn off the MO source and introduce hydrogen gas to raise the temperature of the cavity to 1000-1100℃, the pressure to 50-100 torr, and the baking time to 30-60min.
[0015] Further, in step 2), the deposition temperature of the first GaN layer is 1010-1080℃, the pressure is 100-200 torr, the NH3 flow rate is 30-100 slm, the TMGa flow rate is 50-400 sccm, and the deposition time is 30-50 min.
[0016] Further, in step 3), the deposition temperature of the p-GaN layer is 900-1000℃, the pressure is 100-200 torr, the flow rate of TMGa is 50-200 sccm, the flow rate of NH3 is 30-100 slm, the flow rate of Cp2Mg (magnesium pyrocene) is 200-1200 sccm, and the deposition time is 25-35 min.
[0017] Further, in step 4), the specific steps of the secondary baking are as follows: turn off the MO source and introduce hydrogen gas to raise the temperature of the cavity to 1000-1100℃, the pressure to 50-100 torr, and the baking time to 30-60min.
[0018] Further, in step 5), the deposition temperature of the second GaN layer is 1010-1080℃, the pressure is 100-200 torr, the flow rate of TMGa is 50-400 sccm, the flow rate of NH3 is 30-100 slm, and the deposition time is 15-25 min.
[0019] Further, in step 6), the growth temperature of the AlN layer is 1000-1150℃, the TMAl source flow rate of the AlN layer is 100-500 sccm, the pressure is 50-100 torr, and the deposition time is 30-60 min.
[0020] The second objective of this invention is achieved by the following technical solution:
[0021] A coating for a cavity is prepared by the aforementioned coating deposition method for improving the aluminum environment of the cavity.
[0022] Compared with the prior art, the beneficial effects of the present invention are as follows:
[0023] This invention provides a coating deposition method to improve the aluminum environment of a cavity. After depositing the p-GaN layer, a secondary baking process is added to remove the incompletely attached coating layer in the cavity, leaving a coating nucleus with strong adhesion. In the subsequent coating process, more coating can adhere to the cavity wall, thereby allowing more aluminum components to be adsorbed in the cavity, making the cavity aluminum-rich. This provides a better cavity environment for the subsequent growth of gallium nitride or LED structures and improves the crystal surface.
[0024] The present invention provides a cavity coating that can be attached to the cavity to produce a better aluminum-rich effect. Detailed Implementation
[0025] The present invention will now be further described in conjunction with specific embodiments. It should be noted that, without conflict, the various embodiments or technical features described below can be arbitrarily combined to form new embodiments.
[0026] Example 1
[0027] A coating deposition method for improving the aluminum environment of a cavity includes the following steps:
[0028] 1) After maintenance of the chamber, place the Coating stone grinding disc into the reaction chamber and start the Bake1 program to bake the chamber; the Bake1 program is as follows: turn off the MO source and introduce hydrogen gas to raise the temperature of the chamber to 1000℃, the pressure to 50 torr, and the baking time to 60min.
[0029] 2) Start the GaN Coating1 program to deposit the first GaN layer on the surface of the cavity; the deposition temperature of the first GaN layer is 1010℃, the pressure is 100 torr, the NH3 flow rate is 30 slm, the TMGa flow rate is 50 sccm, and the deposition time is 50 min.
[0030] 3) Start the p-GaN Coating program to deposit a p-GaN layer on the first GaN layer; the deposition temperature of the p-GaN layer is 900℃, the pressure is 100-200 torr, the flow rate of TMGa is 50 sccm, the flow rate of NH3 is 30 slm, the flow rate of Cp2Mg is 200 sccm, and the deposition time is 35 min.
[0031] 4) Start the Bake2 program to bake the cavity a second time; the start of the Bake2 program is as follows: turn off the MO source and introduce hydrogen gas to raise the temperature of the cavity to 1000℃, the pressure to 50 torr, and the baking time to 60min.
[0032] 5) Start the GaN Coating2 program to deposit a second GaN layer on the p-GaN layer; the specific steps of the secondary baking are as follows: turn off the MO source and introduce hydrogen gas to raise the temperature of the chamber to 1000℃, the pressure to 50 torr, and the baking time to 60min.
[0033] 6) Start the AlN Coating program to deposit an AlN layer on the second GaN layer; the growth temperature of the AlN layer is 1000℃, the TMAl source flow rate of the AlN layer is set to 100 sccm, the NH3 flow rate is 30 slm, the pressure is 50 torr, and the deposition time is 60 min.
[0034] The coating deposition method of this embodiment, which improves the aluminum environment of the cavity, results in a coating that adheres to the cavity wall, thereby allowing more aluminum components to be adsorbed into the cavity, making the cavity aluminum-rich.
[0035] Example 2
[0036] A coating deposition method for improving the aluminum environment of a cavity includes the following steps:
[0037] 1) After maintenance of the chamber, place the Coating stone grinding disc into the reaction chamber and start the Bake1 program to bake the chamber; the Bake1 program is as follows: turn off the MO source and introduce hydrogen gas to raise the temperature of the chamber to 1050°C, the pressure to 75 torr, and the baking time to 45 minutes.
[0038] 2) Start the GaN Coating1 program to deposit the first GaN layer on the surface of the cavity; the deposition temperature of the first GaN layer is 1050℃, the pressure is 150 torr, the flow rate of TMGa is 200 sccm, the flow rate of NH3 is 60 slm, and the deposition time is 40 min.
[0039] 3) Start the p-GaN Coating program to deposit a p-GaN layer on the first GaN layer; the deposition temperature of the p-GaN layer is 950℃, the pressure is 150 torr, the flow rate of TMGa is 120 sccm, the flow rate of NH3 is 50 slm, the flow rate of Cp2Mg is 500 sccm, and the deposition time is 30 min.
[0040] 4) Start the Bake2 program to bake the cavity a second time; the start of the Bake2 program is as follows: turn off the MO source and introduce hydrogen gas to raise the temperature of the cavity to 1050°C, the pressure to 70 torr, and the baking time to 45 minutes.
[0041] 5) Start the GaN Coating2 program to deposit a second GaN layer on the p-GaN layer; the specific steps of the secondary baking are as follows: turn off the MO source and introduce hydrogen gas to raise the temperature of the chamber to 1050°C, the pressure to 75 torr, and the baking time to 45 min.
[0042] 6) Start the AlN Coating program to deposit an AlN layer on the second GaN layer; the growth temperature of the AlN layer is 1100℃, the TMAl source flow rate of the AlN layer is set to 300 sccm, the NH3 flow rate is 60 slm, the pressure is 80 torr, and the deposition time is 45 min.
[0043] The coating deposition method of this embodiment, which improves the aluminum environment of the cavity, results in a coating that adheres to the cavity wall, thereby allowing more aluminum components to be adsorbed into the cavity, making the cavity aluminum-rich.
[0044] Example 3
[0045] A coating deposition method for improving the aluminum environment of a cavity includes the following steps:
[0046] 1) After maintenance of the chamber, place the Coating stone grinding disc into the reaction chamber and start the Bake1 program to bake the chamber; the Bake1 program is as follows: turn off the MO source and introduce hydrogen gas to raise the temperature of the chamber to 1100℃, the pressure to 100 torr, and the baking time to 30min.
[0047] 2) Start the GaN Coating1 program to deposit the first GaN layer on the surface of the cavity; the deposition temperature of the first GaN layer is 1080℃, the pressure is 200 torr, the flow rate of TMGa is 400 sccm, the flow rate of NH3 is 100 slm, and the deposition time is 30 min.
[0048] 3) Start the p-GaN Coating program to deposit a p-GaN layer on the first GaN layer; the deposition temperature of the p-GaN layer is 1000℃, the pressure is 200 torr, the flow rate of TMGa is 200 sccm, the flow rate of NH3 is 80 slm, the flow rate of Cp2Mg is 1200 sccm, and the deposition time is 25 min.
[0049] 4) Start the Bake2 program to bake the cavity a second time; the start of the Bake2 program is as follows: turn off the MO source and introduce hydrogen gas to raise the temperature of the cavity to 1100℃, the pressure to 100 torr, and the baking time to 30min.
[0050] 5) Start the GaN Coating2 program to deposit a second GaN layer on the p-GaN layer; the specific steps of the secondary baking are as follows: turn off the MO source and introduce hydrogen gas to raise the temperature of the chamber to 1100℃, the pressure to 100 torr, and the baking time to 60min.
[0051] 6) Start the AlN Coating program to deposit an AlN layer on the second GaN layer; the growth temperature of the AlN layer is 1150℃, the TMAl source flow rate of the AlN layer is set to 500 sccm, the NH3 flow rate is 100 slm, the pressure is 100 torr, and the deposition time is 30 min.
[0052] The coating deposition method of this embodiment, which improves the aluminum environment of the cavity, results in a coating that adheres to the cavity wall, thereby allowing more aluminum components to be adsorbed into the cavity, making the cavity aluminum-rich.
[0053] The above embodiments are merely preferred embodiments of the present invention and should not be construed as limiting the scope of protection of the present invention. Any non-substantial changes and substitutions made by those skilled in the art based on the present invention shall fall within the scope of protection claimed by the present invention.
Claims
1. A method of improving plating deposition in an aluminum cavity environment, comprising: Includes the following steps: 1) Bake the cavity; 2) A first GaN layer is deposited on the surface of the baked cavity; 3) Deposit a p-GaN layer on the first GaN layer; 4) Turn off the MO source and introduce hydrogen gas to perform a second baking of the cavity; 5) Deposit a second GaN layer on the p-GaN layer; 6) Deposit an AlN layer on the second GaN layer.
2. The coating deposition method for improving the aluminum environment of a cavity as described in claim 1, characterized in that, In step 1), the specific baking steps are as follows: turn off the MO source and introduce hydrogen gas to raise the temperature of the cavity to 1000-1100℃, the pressure to 50-100 torr, and the baking time to 30-60 minutes.
3. The coating deposition method for improving the aluminum environment of a cavity as described in claim 1, characterized in that, In step 2), the deposition temperature of the first GaN layer is 1010-1080℃, the pressure is 100-200 torr, the NH3 flow rate is 30-100 slm, the TMGa flow rate is 50-400 sccm, and the deposition time is 30-50 min.
4. The coating deposition method for improving the aluminum environment of a cavity as described in claim 1, characterized in that, In step 3), the deposition temperature of the p-GaN layer is 900-1000℃, the pressure is 100-200 torr, the flow rate of TMGa is 50-200 sccm, the flow rate of NH3 is 30-100 slm, the flow rate of Cp2Mg is 200-1200 sccm, and the deposition time is 25-35 min.
5. The coating deposition method for improving the aluminum environment of a cavity as described in claim 1, characterized in that, In step 4), the specific steps of the secondary baking are as follows: turn off the MO source and introduce hydrogen gas to raise the temperature of the cavity to 1000-1100℃, the pressure to 50-100 torr, and the baking time to 30-60 minutes.
6. The coating deposition method for improving the aluminum environment of a cavity as described in claim 1, characterized in that, In step 5), the deposition temperature of the second GaN layer is 1010-1080℃, the pressure is 100-200 torr, the flow rate of TMGa is 50-400 sccm, the flow rate of NH3 is 30-100 slm, and the deposition time is 15-25 min.
7. The coating deposition method for improving the aluminum environment of a cavity as described in claim 1, characterized in that, In step 6), the growth temperature of the AlN layer is 1000-1150℃, the TMAl source flow rate is 100-500 sccm, the pressure is 50-100 torr, and the deposition time is 30-60 min.
8. A coating for a cavity, characterized in that, It is made by the coating deposition method for improving the aluminum environment of the cavity as described in any one of claims 1-7.