Method and apparatus for measuring edge ring temperature

By using the filtering, collimation, and focusing of infrared radiation in the optical tube pyrometer assembly, the temperature mismatch between the wafer and the chamber components was solved, enabling accurate measurement of the chamber component temperature, reducing the impact of thermal shock, and providing a cost-effective retrofit solution.

CN114787980BActive Publication Date: 2026-04-24APPLIED MATERIALS INC
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
APPLIED MATERIALS INC
Filing Date
2020-10-22
Publication Date
2026-04-24

AI Technical Summary

Technical Problem

In semiconductor processing, temperature mismatch between the wafer and the processing chamber components leads to thermal shock, causing the wafer to warp and jump off the holding surface. Existing methods are difficult to accurately measure the temperature of the chamber components, especially when affected by lamp radiation.

Method used

The photoluminescence pyrometer assembly, including a lamp radiation filter window, a photoluminescence tube, optical components, and a detector, reduces the influence of lamp radiation by filtering, collimating, and focusing infrared radiation using sapphire material and an anti-reflective coating. Combined with liquid cooling and purified gas flow, it improves the accuracy of temperature measurement.

Benefits of technology

It enables accurate measurement of chamber component temperatures, reduces temperature mismatch between wafers and components, provides a cost-effective retrofit method suitable for rapid heat treatment chambers, and reduces expensive modifications to the bottom of the chamber.

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Abstract

An apparatus for measuring the temperature of a component inside a process chamber. The apparatus can include a light pipe positioned between a lamp radiation filter window and the component, the light pipe having a first end portion with a beveled surface and having a second end portion distal from the first end portion, the beveled surface configured to redirect infrared radiation emitted from the component through the light pipe; an optical assembly configured to collimate, filter, and focus the infrared radiation from the second end portion of the light pipe; an optical detector configured to receive an output from the optical assembly and generate at least one signal representative of the infrared radiation; a temperature circuit to convert the at least one signal to a temperature value; and a controller configured to receive the temperature value and make adjustments to other process parameters of the process chamber based on the temperature value.
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Citation Information

Patent Citations

  • Methods and apparatus for wafer temperature measurement

    US20190228997A1

  • Temperature measurement method and temperature measurement device

    WO2013153876A1