Charge loss scan operation management in memory devices

CN114792545BActive Publication Date: 2026-06-26MICRON TECHNOLOGY INC

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
MICRON TECHNOLOGY INC
Filing Date
2022-01-24
Publication Date
2026-06-26

AI Technical Summary

Technical Problem

In the prior art, the slow charge loss of memory devices causes the threshold voltage to drift over time, affecting the accuracy and efficiency of read operations. Furthermore, existing block family scan frequency adjustments fail to effectively cope with temperature changes, resulting in reduced performance or increased bit error rate.

Method used

By identifying the operating temperature of the memory device, the frequency parameters of the block scan operation are adjusted, and the scan frequency is dynamically adjusted according to the temperature range to ensure proper block scan and calibration under different temperature conditions, thereby reducing read errors.

Benefits of technology

It improves the performance and accuracy of the memory subsystem, reduces read errors and system latency, optimizes resource utilization, and avoids performance degradation caused by frequent scanning.

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Abstract

This application relates to charge loss scan operation management in memory devices. A memory system includes a memory device and a processing device operatively coupled to the memory device. The processing device performs operations including identifying an operating temperature of the memory device, determining that the operating temperature satisfies a temperature condition, modifying a scan frequency parameter for performing a scan operation on a representative block of a group of blocks in the memory device, and performing the scan operation at a frequency identified by the scan frequency parameter.
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