Charge loss scan operation management in memory devices
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- MICRON TECHNOLOGY INC
- Filing Date
- 2022-01-24
- Publication Date
- 2026-06-26
AI Technical Summary
In the prior art, the slow charge loss of memory devices causes the threshold voltage to drift over time, affecting the accuracy and efficiency of read operations. Furthermore, existing block family scan frequency adjustments fail to effectively cope with temperature changes, resulting in reduced performance or increased bit error rate.
By identifying the operating temperature of the memory device, the frequency parameters of the block scan operation are adjusted, and the scan frequency is dynamically adjusted according to the temperature range to ensure proper block scan and calibration under different temperature conditions, thereby reducing read errors.
It improves the performance and accuracy of the memory subsystem, reduces read errors and system latency, optimizes resource utilization, and avoids performance degradation caused by frequent scanning.
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Figure CN114792545B_ABST