Method of forming micro light emitting device and method of forming light emitting panel

Abstract

This invention relates to a method for forming micro-light-emitting devices and a method for forming light-emitting panels. The method for forming micro-light-emitting devices includes: forming an initial epitaxial portion on a first substrate, the initial epitaxial portion including a second semiconductor layer, a light-generating layer, a first semiconductor layer, and a first electrode layer stacked thereon, the second semiconductor layer being located between the first substrate and the first electrode layer; stacking the initial epitaxial portion and a second substrate such that the first electrode layer is connected to the second substrate; peeling off the first substrate; the second electrode layer and the initial epitaxial portion together forming a device layer; etching through the device layer along the direction from the second electrode layer toward the first electrode layer to form a plurality of arrayed micro-light-emitting devices on the second substrate. The embodiments of this invention can reduce the probability of crystal breakage or edge chipping during the forming process of micro-light-emitting devices, and improve the yield of the formed micro-light-emitting devices.

Description

Technical Field

[0001] This invention relates to the field of display technology, and in particular to a method for molding a micro-light-emitting device and a method for molding a light-emitting panel. Background Technology

[0002] Micro LED technology refers to a high-density integrated array of tiny LEDs on a substrate. With its extremely high luminous efficiency and extremely long display life, micro LED is expected to lead the next generation of display technology.

[0003] Currently, there are defects in the molding method of micro-light-emitting devices, which makes them prone to crystal breakage or edge cracking during the molding process, affecting the yield of the molded micro-light-emitting devices. Summary of the Invention

[0004] This invention provides a method for molding a micro-light-emitting device and a method for molding a light-emitting panel. The method for molding the micro-light-emitting device can reduce the probability of crystal breakage or edge cracking during the molding process and improve the molding yield of the micro-light-emitting device.

[0005] On one hand, according to embodiments of the present invention, a method for forming a micro-light-emitting device is proposed, comprising:

[0006] An initial epitaxial portion is formed on a first substrate. The initial epitaxial portion includes a second semiconductor layer, a light generating layer, a first semiconductor layer, and a first electrode layer stacked together. The second semiconductor layer is located between the first substrate and the first electrode layer.

[0007] The initial epitaxial portion is stacked with the second substrate and the first electrode layer is connected to the second substrate.

[0008] Peel off the first substrate;

[0009] A second electrode layer is formed on the surface of the second semiconductor layer that is away from the first electrode layer. The second electrode layer and the initial epitaxial portion together constitute a device layer.

[0010] The device layer is etched through along the direction from the second electrode layer toward the first electrode layer to form multiple array-distributed micro-light-emitting devices on the second substrate.

[0011] According to one aspect of the present invention, prior to the step of stacking the initial epitaxial portion with the second substrate and connecting the first electrode layer with the second substrate, the method for forming the micro-light-emitting device further includes:

[0012] Provide a base;

[0013] A connection layer is formed on a substrate. The second substrate includes a substrate and a connection layer, which is used to connect to the first electrode layer.

[0014] According to one aspect of the present invention, before the step of forming an initial epitaxial portion on a first substrate, the forming method further includes:

[0015] Provide a first substrate;

[0016] A buffer layer is formed on the first substrate, which is used to provide a growth surface for the initial epitaxial portion.

[0017] According to one aspect of the present invention, the step of forming an initial epitaxial portion on a first substrate includes:

[0018] An n-type doped GaN thin film is grown on a first substrate to form a second semiconductor layer;

[0019] An InGaN / GaN quantum well is grown on the second semiconductor layer to form a light-generating layer;

[0020] A p-type doped GaN thin film is grown on the light-generating layer to form the first semiconductor layer;

[0021] A first metal layer is sputtered over the entire surface of the first semiconductor layer to form a first electrode layer.

[0022] According to one aspect of the present invention, the step of forming a second electrode layer on the side of the second semiconductor layer opposite to the first semiconductor layer includes:

[0023] A second metal layer is sputtered across the entire side of the second semiconductor layer away from the first semiconductor layer to form a second electrode layer.

[0024] On the other hand, according to an embodiment of the present invention, a method for forming a light-emitting panel is provided, comprising:

[0025] The micro-light-emitting device is formed using the above-mentioned molding method;

[0026] The micro-light-emitting device is transferred to the driving backplane and electrically connected to the array electrode layer disposed on the driving backplane.

[0027] A light blocking layer is formed on the driving backplate, the light blocking layer covers the micro-light-emitting device and the side of the micro-light-emitting device facing away from the driving backplate is exposed in the light blocking layer.

[0028] A common electrode layer is formed on the side of the light-blocking layer away from the driving backplate. The common electrode layer covers the light-blocking layer and the micro-light-emitting device and is electrically connected to the micro-light-emitting device.

[0029] According to another aspect of the present invention, prior to the step of transferring the micro-light-emitting device to the driving backplane and electrically connecting it to the array electrode layer disposed on the driving backplane, the method for forming the light-emitting panel further includes:

[0030] The second substrate containing the micro-light-emitting devices is carbonized so that the regions of the second substrate between each pair of adjacent micro-light-emitting devices are at least partially independent of each other.

[0031] According to another aspect of the present invention, the step of carbonizing the second substrate on which the micro-light-emitting device is located includes:

[0032] The second substrate is irradiated with a laser in the area between two adjacent micro-light-emitting devices, so that the area of ​​the second substrate irradiated by the laser and the portion of the substrate opposite to the micro-light-emitting devices are carbonized.

[0033] According to another aspect of the present invention, the second substrate after carbonization is subjected to plasma bombardment treatment to reduce the connection strength between the second substrate and the corresponding portions of each micro-light-emitting device.

[0034] According to another aspect of the present invention, the step of forming a light-blocking layer on a driving backplane includes:

[0035] A black coating is spin-coated onto the side of the drive backplate where the micro-light-emitting device is located;

[0036] Dry the black coating;

[0037] The dried black coating is patterned to expose the side of the micro-light-emitting device away from the driving backplate, thus forming a light-blocking layer.

[0038] According to the molding method of the micro-light-emitting device and the molding method of the light-emitting panel provided by the embodiments of the present invention, the molding method of the micro-light-emitting device involves molding an initial epitaxial portion on a first substrate, connecting its first electrode layer to a second substrate, then peeling off the first substrate to transfer the initial epitaxial portion from the first substrate to the second substrate, molding a second electrode layer on the transferred initial epitaxial portion, and then cutting the overall formed device layer to form the micro-light-emitting device. Because the micro-light-emitting device is transferred by peeling off the entire initial epitaxial portion during the molding process, the overall strength of the initial epitaxial portion is high, and it is not easily broken during peeling. This effectively reduces the probability of crystal breakage or edge breakage during the molding process of the micro-light-emitting device, and improves the yield of the molded micro-light-emitting device. Attached Figure Description

[0039] The features, advantages and technical effects of exemplary embodiments of the present invention will now be described with reference to the accompanying drawings.

[0040] Figure 1 This is a schematic flowchart of a method for forming a micro-light-emitting device according to an embodiment of the present invention;

[0041] Figures 2 to 6 This is a schematic diagram of the structure corresponding to each step of the molding method of a micro-light-emitting device according to an embodiment of the present invention;

[0042] Figure 7 This is a flowchart illustrating step 100 of the molding method for a micro-light-emitting device according to an embodiment of the present invention.

[0043] Figure 8 This is a schematic flowchart of a method for forming a light-emitting panel according to an embodiment of the present invention;

[0044] Figures 9 to 13 This is a schematic diagram of the structure corresponding to each step of the molding method of the light-emitting panel according to an embodiment of the present invention;

[0045] Figure 14 This is a flowchart illustrating step S30 of the method for forming a light-emitting panel according to an embodiment of the present invention.

[0046] Figure 15 This is a schematic diagram of the carbonization of the connecting layer in the molding method of the light-emitting panel according to another embodiment of the present invention.

[0047] in:

[0048] 1-Initial epitaxial layer; 10-First substrate; 20-Second semiconductor layer; 30-Light generating layer; 40-First semiconductor layer; 50-First electrode layer; 60-Second electrode layer; 70-Buffer layer; 80-Second substrate; 81-Substrate; 82-Connection layer; 100-Micro light-emitting device; 200-Driving backplane; 300-Array electrode layer; 400-Light blocking layer; 500-Common electrode layer; 600-Encapsulation layer; 700-Transfer head.

[0049] In the accompanying drawings, the same parts use the same reference numerals. The drawings are not drawn to scale. Detailed Implementation

[0050] The features and exemplary embodiments of various aspects of the present invention will now be described in detail. Numerous specific details are set forth in the following detailed description in order to provide a thorough understanding of the invention. However, it will be apparent to those skilled in the art that the invention may be practiced without requiring some of these specific details. The following description of embodiments is merely intended to provide a better understanding of the invention by illustrating examples of the invention. In the accompanying drawings and the following description, at least some well-known structures and techniques have not been shown in order to avoid unnecessarily obscuring the invention; and, for clarity, the dimensions of some structures may be exaggerated. Furthermore, the features, structures, or characteristics described below may be combined in any suitable manner in one or more embodiments.

[0051] The directional terms used in the following description refer to the directions shown in the figures and are not intended to limit the specific molding methods of the micro-light-emitting device and the light-emitting panel of the present invention.

[0052] In the molding process of existing micro-light-emitting devices, especially for vertically structured micro-light-emitting devices, the main molding method is to sequentially mold a second semiconductor layer, a light-generating layer, a first semiconductor layer, and a first electrode layer on a first substrate. Multiple stacked units are formed by sequentially etching through the second semiconductor layer, the light-generating layer, the first semiconductor layer, and the first electrode layer. After that, the multiple stacked units are transferred to a second substrate, and then a second electrode layer is formed on the second semiconductor layer portion corresponding to each stacked unit. Although this molding method can meet the molding requirements of vertically structured micro-light-emitting devices, since each layer structure is formed into a stacked unit on the first substrate and then transferred to the second substrate, the strength of a single stacked unit is limited during the peeling and transfer process, which easily leads to crystal breakage or edge breakage, affecting the yield of the molded micro-light-emitting devices.

[0053] To address the aforementioned technical problems, embodiments of the present invention provide a method for molding a micro-light-emitting device and a method for molding a light-emitting panel. This method reduces the probability of crystal breakage or edge chipping during the molding process, thereby improving the yield of the molded micro-light-emitting device. To better understand the present invention, the following describes the method in conjunction with... Figures 1 to 15 The molding method for micro-light-emitting devices and the molding method for light-emitting panels according to embodiments of the present invention will be described in detail.

[0054] like Figures 1 to 6 As shown, Figure 1 A schematic flowchart of a method for forming a micro-light-emitting device according to an embodiment of the present invention is shown. Figures 2 to 6 The diagram shows the structural schematics corresponding to each step of the molding method of a micro-light-emitting device according to an embodiment of the present invention.

[0055] The method for forming the micro-light-emitting device 100 provided in this embodiment of the invention includes:

[0056] S100, such as Figure 2 As shown, an initial epitaxial portion 1 is formed on a first substrate 10. The initial epitaxial portion 1 includes a second semiconductor layer 20, a light generating layer 30, a first semiconductor layer 40, and a first electrode layer 50 stacked together. The second semiconductor layer 20 is located between the first substrate 10 and the first electrode layer 50.

[0057] S200, such as Figure 3 As shown, the initial epitaxial portion 1 and the second substrate 80 are stacked and the first electrode layer 50 is connected to the second substrate 80. They can be connected to each other by direct or indirect connection.

[0058] S300, such as Figure 4 As shown, the first substrate 10 is peeled off so that the initial epitaxial portion 1 is transferred from the first substrate 10 to the second substrate 80.

[0059] S400, such as Figure 5 As shown, a second electrode layer 60 is formed on the surface of the second semiconductor layer 20 away from the first electrode layer 50, and the second electrode layer 60 and the initial epitaxial portion 1 together constitute a device layer.

[0060] S500, such as Figure 6 As shown, the device layer is etched through in the direction X from the second electrode layer 60 toward the first electrode layer 50 to form a plurality of arrayed micro-light-emitting devices 100 on the second substrate 80.

[0061] The method for forming a micro-light-emitting device 100 provided in this embodiment of the invention involves forming an initial epitaxial portion 1 on a first substrate 10, connecting its first electrode layer 50 to a second substrate 80, and then peeling off the first substrate 10 to transfer the initial epitaxial portion 1 from the first substrate 10 to the second substrate 80. Since the initial epitaxial portion 1 is peeled off as a whole during the transfer from the first substrate 10 to the second substrate 80 in the forming process, the overall strength of the initial epitaxial portion 1 is high. After the transfer, the second electrode layer 60 is formed and the overall device layer is cut, which can effectively reduce the probability of crystal breakage or edge breakage during the forming process of the micro-light-emitting device 100 and improve the yield of the formed micro-light-emitting device 100.

[0062] In some optional embodiments, the molding method of the micro-light-emitting device 100 provided in the embodiments of the present invention may have a first substrate 10 that can be a sapphire substrate and a second substrate 80 that can be at least partially a glass substrate.

[0063] like Figure 7 As shown, Figure 7 A flowchart illustrating step 100 of a method for molding a micro-light-emitting device 100 according to an embodiment of the present invention is shown. As an optional implementation, step S100 of the method for molding the micro-light-emitting device 100 provided in this embodiment of the present invention may include:

[0064] S110. An n-type doped GaN thin film is grown on the first substrate 10 to form a second semiconductor layer 20.

[0065] S120. An InGaN / GaN quantum well is grown on the second semiconductor layer 20 to form a light-generating layer 30.

[0066] S130. A p-type doped GaN thin film is grown on the light-generating layer 30 to form the first semiconductor layer 40.

[0067] S140, a first metal layer is sputtered over the entire surface of the first semiconductor layer 40 to form a first electrode layer 50.

[0068] Step S100 adopts the above-mentioned molding method, which is conducive to the molding of the initial epitaxial portion 1 and can ensure the performance requirements of the pre-molded micro-light-emitting device 100.

[0069] Continue reading Figures 2 to 6 As shown, in some optional embodiments, before step S100, the molding method further includes:

[0070] Provide a first substrate 10;

[0071] A buffer layer 70 is formed on the first substrate 10. The buffer layer 70 is used to provide a growth surface to the initial epitaxial portion 1.

[0072] By providing a first substrate 10 and pre-forming a buffer layer 70 on the first substrate 10 to provide a growth surface for the initial epitaxial portion 1, it is possible to avoid lattice mismatch caused by material mismatch with the first substrate 10 during the formation of the initial epitaxial portion 1.

[0073] Optionally, the step of forming a buffer layer 70 on the first substrate 10, wherein the buffer layer 70 is used to provide a growth surface for the initial epitaxial portion 1 includes: growing ALN and / or GaN thin films in an MOCVD chamber on the first substrate of a 4-inch or 8-inch sapphire wafer to form the buffer layer 70.

[0074] In some optional embodiments, the method for forming the micro-light-emitting device 100 provided in this embodiment of the invention further includes, before step S200:

[0075] Provides substrate 81;

[0076] A connection layer 82 is formed on a substrate 81. The second substrate 80 includes a substrate 81 and a connection layer 82, which is used to connect to the first electrode layer 50.

[0077] The method for forming the micro-light-emitting device provided in this embodiment of the invention, using the above-described implementation method, facilitates the connection with the first electrode layer 50.

[0078] In some alternative examples, a substrate 81 is provided, and the integral implementation step of forming the connection layer 82 on the substrate 81 can be performed before step S100, or between step S100 and step S200, as long as the connection with the first electrode layer 50 can be satisfied.

[0079] As an optional implementation, the provided substrate 81 can be a glass substrate, and the step of forming the bonding layer 82 on the substrate 81 may include spin-coating silicone liquid onto the substrate 81 and curing it to form the bonding layer 82. Of course, in some embodiments, adhesive tape of a predetermined thickness may also be adhered to the substrate 81 to form the bonding layer 82.

[0080] In some optional examples, the thickness of the formed connection layer 82 can be any value between 8um and 12um, including both 8um and 12um, and optionally 10um.

[0081] Optionally, when a connecting layer 82 is formed on the substrate 81, step S200 includes stacking the initial epitaxial portion 1 and the connecting layer 82 to connect the first electrode layer 50 to the connecting layer 82 of the second substrate 80.

[0082] Optionally, the first electrode layer 50 and the connecting layer 82 can be connected by bonding or adhesive bonding.

[0083] As an optional implementation, in the molding method of the micro-light-emitting device 100 provided in this embodiment of the invention, step S300 may employ laser lift-off to peel the first substrate 10 from the initial epitaxial portion 1. Optionally, step S300 may include:

[0084] The laser irradiates the surface of the first substrate 10 that is away from the initial epitaxial portion 1;

[0085] The first substrate 10 is peeled off under the action of external force so that the initial epitaxial portion 1 is transferred from the first substrate 10 to the second substrate 80.

[0086] In some optional embodiments, the forming method of the micro-light-emitting device 100 provided in the present invention includes step S400: sputtering a second metal layer on the side of the second semiconductor layer 20 away from the first semiconductor layer 40 to form a second electrode layer 60, wherein the sputtered metal can be aluminum or the like.

[0087] As an optional implementation, the molding method of the micro-light-emitting device 100 provided in this embodiment of the invention includes step S500:

[0088] Select a suitable mask structure based on the number and size of the pre-formed micro-light-emitting devices 100 and set it on the side of the entire device layer away from the second substrate 80.

[0089] X-ray etching is performed along the direction of the second electrode layer 60 toward the first electrode layer 50 to etch through the device layer until the device layer is etched through, so as to form multiple micro-light-emitting devices 100.

[0090] The molding method for the micro-light-emitting device 100 provided in this embodiment of the invention effectively reduces the probability of crystal breakage or edge breakage during the molding process of the micro-light-emitting device 100 by transferring the initial epitaxial portion 1 entirely from the first substrate 10 to the second substrate 80 and molding the second electrode layer 60 before cutting. This improves the yield of the molded micro-light-emitting device 100. Furthermore, in this application, both the first electrode layer 50 and the second electrode layer 60 are molded using a full-surface molding method, simplifying the electrode patterning process and improving the connection strength with the second substrate 80.

[0091] For example, 8 to Figure 13 As shown, Figure 8 A schematic flowchart of a method for forming a light-emitting panel according to an embodiment of the present invention is shown. Figures 9 to 13 A schematic diagram of the structure corresponding to each step of a method for forming a light-emitting panel according to an embodiment of the present invention is shown. On the other hand, an embodiment of the present invention also provides a method for forming a light-emitting panel, comprising:

[0092] S10, such as Figure 9 As shown, the micro-light-emitting device 100 is formed by the above-described molding method.

[0093] S20, such as Figure 10 As shown, the micro-light-emitting device 100 is transferred to the driving backplate 200 and electrically connected to the array electrode layer 300 disposed on the driving backplate 200.

[0094] S30, such as Figure 11 As shown, a light blocking layer 400 is formed on the driving backplate 200. The light blocking layer 400 covers the micro-light-emitting device 100, and the side of the micro-light-emitting device 100 facing away from the driving backplate 200 is exposed in the light blocking layer 400.

[0095] S40, such as Figure 12 As shown, a common electrode layer 500 is formed on the side of the light blocking layer 400 away from the driving backplate 200. The common electrode layer 500 covers the light blocking layer 400 and the micro-light-emitting device 100 and is electrically connected to the micro-light-emitting device 100.

[0096] Optionally, such as Figure 13 As shown, the method for forming the light-emitting panel further includes forming an encapsulation layer 600 on the side of the common electrode layer 500 away from the driving backplate 200, the encapsulation layer 600 covering the common electrode layer 500.

[0097] As an optional implementation, in step S20, a transfer head 700 is used to transfer micro-light-emitting devices 100 capable of emitting the same color of light to the driving backplate 200 and bond them to the array electrode layer 300 of the driving backplate 200 for electrical connection. For example, micro-light-emitting devices 100 emitting blue light can be transferred to the driving backplate 200 and electrically connected to the array electrode layer 300 in advance. The above operation is repeated to transfer micro-light-emitting devices 100 emitting other colors of light to the driving backplate 200 and electrically connect them to the array electrode layer 300 on the driving backplate 200. For example, the above process can be repeated to sequentially transfer each micro-light-emitting device 100 emitting red light and each micro-light-emitting device 100 emitting green light to the driving backplate 200 and electrically connect them to the array electrode layer 300.

[0098] Optionally, the array electrode layer 300 can be an anode layer, and the common electrode layer 500 can be a cathode layer.

[0099] like Figure 14 As shown, Figure 14 A flowchart illustrating step S30 of a method for forming a light-emitting panel according to an embodiment of the present invention is shown. In some optional embodiments, step S30 of the method for forming a light-emitting panel provided by the present invention includes:

[0100] S31. A black coating is spin-coated onto one side of the micro-light-emitting device 100 on the drive backplate 200.

[0101] S32, Dry the black coating;

[0102] S33. The dried black coating is patterned to expose the side of the micro-light-emitting device 100 facing away from the driving backplate 200, thereby forming a light-blocking layer 400. The method for forming a light-emitting panel provided in this embodiment of the invention, through the above-mentioned arrangement, facilitates the forming of the light-blocking layer 400 and effectively avoids light crosstalk problems between adjacent micro-light-emitting devices 100.

[0103] As an alternative implementation method, such as Figure 15 As shown, Figure 15 A schematic diagram of the carbonization of the connecting layer 82 is shown in another embodiment of the light-emitting panel forming method of the present invention. As an optional implementation, the light-emitting panel forming method provided in this embodiment further includes, before step S20, carbonizing the second substrate 80 where the micro-light-emitting devices 100 are located, so that the regions of the second substrate 80 between each pair of adjacent micro-light-emitting devices are at least partially independently disposed from each other. This arrangement reduces the connection strength between the connecting layer 82 and the first electrode layer 50, facilitating the peeling of the micro-light-emitting devices 100 from the second substrate 80 during batch transfer, thus ensuring better batch transfer of the micro-light-emitting devices 100.

[0104] In some alternative embodiments, when the second substrate 80 includes a substrate 81 and a connecting layer 82, the connecting layer 82 of the second substrate 80 may be carbonized during the step of carbonizing the second substrate 80 where the micro-light-emitting device 100 is located.

[0105] As an optional implementation, the carbonization process of the second substrate 80 includes: irradiating the area of ​​the second substrate 80 between two adjacent micro-light-emitting devices 100 with a laser, so that the irradiated area of ​​the second substrate 80 and the portion of the second substrate 80 opposite to the micro-light-emitting devices 100 are carbonized. Optionally, when the second substrate 80 includes a connecting layer 82, the area of ​​the connecting layer 82 between two adjacent micro-light-emitting devices 100 and the portion of the connecting layer 82 opposite to the micro-light-emitting devices 100 can be carbonized by laser irradiation. Using laser irradiation to carbonize the second substrate 80 is simple to operate and can ensure the carbonization effect on the connecting layer 82, facilitating the transfer of the micro-light-emitting devices 100.

[0106] As an optional implementation, the method for forming the micro-light-emitting device 100 provided in this embodiment of the invention can also continue to perform the above-described carbonization treatment of the second substrate 80 where the micro-light-emitting device 100 is located after performing the step of etching through the device layer along the direction X from the second electrode layer 60 toward the first electrode layer 50 in step S500. The specific operation and advantages are the same as those in the above embodiment, and will not be repeated here.

[0107] In some optional embodiments, the molding method of the micro-light-emitting device 100 provided in the present invention further includes: plasma bombardment treatment of the carbonized second substrate 80 to reduce the connection strength between the second substrate 80 and the corresponding part of each micro-light-emitting device 100, which is more conducive to the batch transfer of the molded micro-light-emitting device 100.

[0108] The method for forming a light-emitting panel provided in this embodiment of the invention produces micro-light-emitting devices 100 with good performance due to the use of the forming methods for the micro-light-emitting devices 100 provided in the above embodiments, and the probability of crystal breakage or edge breakage during batch transfer is low. Simultaneously, forming a light-blocking layer 400 on the driving backplate 200 can prevent crosstalk between the micro-light-emitting devices 100, thus improving the display color gamut when the formed light-emitting panel is used for display.

[0109] Although the invention has been described with reference to preferred embodiments, various modifications can be made and components can be replaced with equivalents without departing from the scope of the invention. In particular, the technical features mentioned in the various embodiments can be combined in any manner as long as there is no structural conflict. The invention is not limited to the specific embodiments disclosed herein, but includes all technical solutions falling within the scope of the claims.

Claims

1. A method for forming a micro-light-emitting device, characterized in that, include: An initial epitaxial portion is formed on a first substrate. The initial epitaxial portion includes a second semiconductor layer, a light generating layer, a first semiconductor layer, and a first electrode layer stacked together. The second semiconductor layer is located between the first substrate and the first electrode layer. The initial epitaxial portion is stacked with the second substrate, and the first electrode layer is connected to the second substrate. Peel off the first substrate; A second electrode layer is formed on the surface of the second semiconductor layer opposite to the first electrode layer, and the second electrode layer and the initial epitaxial portion together constitute a continuous device layer. The device layer is etched through along the direction of the second electrode layer toward the first electrode layer to form a plurality of array-distributed micro-light-emitting devices on the second substrate; The second substrate containing the micro-light-emitting devices is carbonized so that the regions of the second substrate between each pair of adjacent micro-light-emitting devices are at least partially independent of each other.

2. The method for forming a micro-light-emitting device according to claim 1, characterized in that, Before the step of stacking the initial epitaxial portion with the second substrate and connecting the first electrode layer with the second substrate, the method for forming the micro-light-emitting device further includes: Provide a base; A connection layer is formed on the substrate, the second substrate including the substrate and the connection layer, the connection layer being used to connect to the first electrode layer.

3. The method for forming a micro-light-emitting device according to claim 1, characterized in that, Prior to the step of forming the initial epitaxial portion on the first substrate, the forming method further includes: Provide a first substrate; A buffer layer is formed on the first substrate, the buffer layer being used to provide a growth surface to the initial epitaxial portion.

4. The method for forming a micro-light-emitting device according to any one of claims 1 to 3, characterized in that, The step of forming the initial epitaxial portion on the first substrate includes: An n-type doped GaN thin film is grown on the first substrate to form the second semiconductor layer; An InGaN / GaN quantum well is grown on the second semiconductor layer to form the light-generating layer; A p-type doped GaN thin film is grown on the light-generating layer to form the first semiconductor layer; A first metal layer is sputtered over the entire surface of the first semiconductor layer to form the first electrode layer.

5. The method for forming a micro-light-emitting device according to any one of claims 1 to 3, characterized in that, The step of forming a second electrode layer on the side of the second semiconductor layer opposite to the first semiconductor layer includes: A second metal layer is sputtered across the entire side of the second semiconductor layer away from the first semiconductor layer to form the second electrode layer.

6. A method for forming a light-emitting panel, characterized in that, include: A micro-light-emitting device formed by the molding method of any one of claims 1 to 5 is provided; The micro-light-emitting device is transferred to the driving backplane and electrically connected to the array electrode layer disposed on the driving backplane; A light blocking layer is formed on the driving backplate, the light blocking layer covers the micro-light-emitting device and the side of the micro-light-emitting device facing away from the driving backplate is exposed in the light blocking layer; A common electrode layer is formed on the side of the light-blocking layer opposite to the driving backplate. The common electrode layer covers the light-blocking layer and the micro-light-emitting device and is electrically connected to the micro-light-emitting device.

7. The method for forming a light-emitting panel according to claim 6, characterized in that, The step of carbonizing the second substrate on which the micro-light-emitting device is located includes: The second substrate is irradiated with a laser in the area between two adjacent micro-light-emitting devices, such that the area of ​​the second substrate irradiated by the laser and the portion of the substrate opposite to the micro-light-emitting devices are carbonized.

8. The method for forming a light-emitting panel according to claim 6, characterized in that, The second substrate, after carbonization, is subjected to plasma bombardment treatment to reduce the connection strength between the second substrate and the corresponding portions of each of the micro-light-emitting devices.

9. The method for forming a light-emitting panel according to claim 6, characterized in that, The step of forming a light-blocking layer on the drive backplane includes: A black coating is spin-coated on one side of the micro-light-emitting device on the drive backplate; Dry the black coating; The dried black coating is patterned to expose the side of the micro-light-emitting device facing away from the driving backplate, thereby forming the light-blocking layer.

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