Light emitting device and method of manufacturing the same

Abstract

A light-emitting device and a manufacturing method thereof, the light-emitting device comprising a substrate, a conductive circuit layer, a plurality of conductive connecting parts and a plurality of semiconductor light-emitting sources. The conductive circuit layer is located on the substrate. The conductive circuit layer comprises a plurality of conductive structures, wherein each conductive structure has at least one soldering pad, and there is a gap between two adjacent conductive structures. Each conductive connecting part is arranged on each corresponding soldering pad. Each semiconductor light-emitting source is arranged across two adjacent conductive connecting parts corresponding to each gap, and is then electrically connected to the soldering pads of two adjacent ones of the plurality of conductive structures. In this way, the conductive connecting part can make the connection between the semiconductor light-emitting source of the light-emitting device and the soldering pad more stable, thereby improving the conductive properties and mechanical properties of the light-emitting device.

Description

Technical Field

[0001] The present invention relates to a light emitting device and a manufacturing method thereof, and in particular to a semiconductor light emitting device and a manufacturing method thereof. Background Art

[0002] Light emitting diode devices have been widely used in a variety of products. In order to meet the development trend of many products to be light, thin and small, the printed circuit boards used to carry and conduct the light emitting diodes also need to be thinner.

[0003] In many cases, traditional printed circuit boards can no longer meet the increasingly sophisticated and demanding process and technical requirements, and the light-emitting diodes soldered on the printed circuit boards may sometimes fall off. Therefore, it is necessary to improve the printed circuit boards of light-emitting devices. Summary of the invention

[0004] In view of this, an object of the present invention is to provide a light-emitting device that can solve the above-mentioned problems. The light-emitting device includes a substrate, a conductive circuit layer, a plurality of conductive connecting parts and a plurality of semiconductor light-emitting sources. The conductive circuit layer is located on the substrate. The conductive circuit layer includes a plurality of conductive structures, each of which has at least one soldering pad, and there is a gap between two adjacent conductive structures. Each conductive connecting part is arranged on each corresponding soldering pad. Each semiconductor light-emitting source corresponds to each gap and is arranged across two adjacent conductive connecting parts, thereby being electrically connected to the soldering pads of two adjacent ones of the conductive structures.

[0005] In one or more embodiments of the present invention, the light-emitting device further comprises a reflective layer, which is disposed on the conductive circuit layer and covers the conductive structure, wherein the reflective layer comprises a plurality of openings corresponding to the intervals respectively, and the pads of two adjacent ones in the conductive structure are located in one of the openings.

[0006] In one or more embodiments of the present invention, the conductive connection portion contacts a side surface of the reflective layer.

[0007] In one or more embodiments of the present invention, the conductive connection portion is spaced apart from a side surface of the reflective layer.

[0008] In one or more embodiments of the present invention, the material of the conductive connection portion includes copper, nickel, tantalum, silver, gold, tin or alloys thereof.

[0009] In one or more embodiments of the present invention, the conductive connection portion is made of copper paste, silver paste, gold-tin paste or solder paste.

[0010] In one or more embodiments of the present invention, the semiconductor light source is a light emitting diode chip, which includes two electrodes respectively located on two adjacent conductive connecting parts.

[0011] In one or more embodiments of the present invention, the horizontal position of the electrode does not exceed the horizontal position of the reflective layer.

[0012] In one or more embodiments of the present invention, the reflective layer is a white reflective layer or a metal reflective layer.

[0013] Another object of the present invention is to provide a method for manufacturing a light-emitting device, comprising the following steps: providing a substrate; forming a conductive circuit layer on the substrate, the conductive circuit layer comprising a plurality of conductive structures, wherein each conductive structure has at least one soldering pad, and there is a gap between two adjacent conductive structures; forming a plurality of conductive connecting portions, wherein each conductive connecting portion is located on each soldering pad; and providing a plurality of semiconductor light-emitting sources, each semiconductor light-emitting source corresponding to each gap to span between two adjacent conductive connecting portions, and thereby electrically connected to the soldering pads of two adjacent ones of the conductive structures.

[0014] In one or more embodiments of the present invention, forming a conductive connection portion includes the following steps: providing a reflective layer to cover the conductive structure, wherein the reflective layer includes a plurality of openings corresponding to the intervals, each opening being used to expose two adjacent pads in the conductive structure; forming a seed layer to cover the top surface of the reflective layer and to cover the exposed pad surface along the side walls of these openings; forming a photoresist layer on the surface of the seed layer, wherein the photoresist layer exposes a portion of the seed layer above the pad; and forming a conductive connection portion through the seed layer.

[0015] In one or more embodiments of the present invention, the photoresist layer covers a portion of the seed layer on the top surface of the reflective layer.

[0016] In one or more embodiments of the present invention, the photoresist layer covers a portion of the seed layer extending from the top surface of the reflective layer to the sidewall of the opening.

[0017] In one or more embodiments of the present invention, forming the conductive connection parts includes the following steps: forming a plurality of thickened parts on the seed layer; and removing the photoresist layer and partially removing the seed layer to form the conductive connection parts.

[0018] In one or more embodiments of the present invention, forming these conductive connections includes the following steps: forming a plurality of thickened portions on the seed layer; and removing the photoresist layer and at least a portion of the seed layer on the top surface of the reflective layer to obtain the conductive connections.

[0019] In one or more embodiments of the present invention, the material of the seed layer includes copper, nickel, tantalum, silver, gold, tin or alloys thereof.

[0020] In one or more embodiments of the present invention, forming the conductive connection portion includes the following steps: forming a conductive paste on each pad by a printing process or a spraying process to form the conductive connection portion.

[0021] In one or more embodiments of the present invention, forming the at least two conductive connection parts includes: providing a reflective layer to cover the conductive structure, wherein the reflective layer includes a plurality of openings corresponding to the intervals, each opening being used to expose two adjacent pads in the conductive structure; and in each opening, a conductive paste is formed on each pad using a printing process or a spraying process to form a conductive connection part, wherein the conductive connection part contacts the side of the reflective layer.

[0022] In one or more embodiments of the present invention, the printing process is a stencil printing process.

[0023] In one or more embodiments of the present invention, the semiconductor light source is a light emitting diode chip, which includes two electrodes electrically connected to two adjacent conductive connection parts in a flip chip manner.

[0024] In summary, the present invention provides a light emitting device having a special conductive connection portion and a manufacturing method thereof. The conductive connection portion can make the connection between the semiconductor light source of the light emitting device and the bonding pad more stable, thereby improving the conductive properties and mechanical properties of the light emitting device.

[0025] The above description is only used to illustrate the problems to be solved by the present invention, the technical means to solve the problems, and the effects produced, etc. The specific details of the present invention will be introduced in detail in the following implementation methods and related drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] To achieve the above advantages and features, the principles briefly described above will be explained in more detail with reference to embodiments, which are presented in the accompanying drawings. These drawings are only illustrative of the present invention and therefore do not limit the scope of the invention. The principles of the present invention will be clearly explained through the accompanying drawings, and additional features and details will be fully described, in which:

[0027] Figure 1A According to one or more embodiments of the present invention, a three-dimensional schematic diagram of a light-emitting device of the present invention is depicted;

[0028] Figure 1B According to one or more embodiments of the present invention, a three-dimensional schematic diagram of a light-emitting device of the present invention is depicted;

[0029] Figure 2A and Figure 2B Plotted as Figure 1A A flow chart of a method for manufacturing a light emitting device;

[0030] FIG. 3A to FIG. 3H Based on Figure 2A and Figure 2B The manufacturing method in the embodiment of the present invention is shown in cross-sectional views at different stages, wherein Figure 3H for Figure 1AA cross-sectional view of the light emitting device taken along the AA section line;

[0031] 4A to 4H Based on Figure 2A and Figure 2B The manufacturing method in the embodiment of the present invention is shown in cross-sectional views at different stages, wherein Figure 4H for Figure 1A A cross-sectional view of the light emitting device taken along the AA section line; and

[0032] FIG. 5A to FIG. 5E Based on Figure 2A The manufacturing method in the embodiment of the present invention is shown in cross-sectional views at different stages, wherein Figure 5E for Figure 1A A cross-sectional view of the light emitting device in FIG. 1 is drawn along the AA cross-sectional line.

[0033]

Explanation of symbols

[0034] 100: Light emitting device

[0035] 110:Substrate

[0036] 120: Conductive circuit layer

[0037] 121: Conductive structure

[0038] 123: Solder pad

[0039] 123a: first pad

[0040] 123b: Second pad

[0041] 130: Reflection layer

[0042] 131: Opening

[0043] 131a: Side wall

[0044] 140a, 140b: seed layer

[0045] 141a, 141b: thickened part

[0046] 150a, 150b: photoresist layer

[0047] 160a, 160b, 160c: conductive connection part

[0048] 170:Semiconductor light source

[0049] 200: Method

[0050] 210,230,250,270: Steps

[0051] 251,253,255,257: Steps

[0052] T: Transparent encapsulation layer

[0053] D: Interval DETAILED DESCRIPTION

[0054] The following will disclose multiple embodiments of the present invention with the accompanying drawings. For the purpose of clear description, many practical details will be described together in the following description. However, it should be understood that these practical details should not be used to limit the present invention. That is, in some embodiments of the present invention, these practical details are not necessary. In addition, in order to simplify the drawings, some known and commonly used structures and elements will be depicted in a simple schematic manner in the drawings.

[0055] Please refer to Figure 1A , Figure 1A A three-dimensional schematic diagram of a light emitting device 100 in one or more embodiments of the present invention is shown, wherein the light emitting device 100 includes a substrate 110, a conductive circuit layer 120, and a plurality of semiconductor light emitting sources 170, wherein the conductive circuit layer 120 is located on the substrate 110, and the semiconductor light emitting source 170 is located on the conductive circuit layer 120. The semiconductor light emitting source 170 is electrically connected to the circuit structure of the conductive circuit layer 120, and the semiconductor light emitting source 170 can be, for example, a light emitting diode light source, such as a light emitting diode chip, or even a sub-millimeter light emitting diode chip or a micro light emitting diode chip of a smaller size, but the present invention is not limited thereto. In addition, as Figure 1B As shown, the light emitting device 100 may further include a transparent encapsulation layer T, which is used to cover the conductive circuit layer 120 and the semiconductor light source 170, and the refractive index of the transparent encapsulation layer T may be, for example, between 1.49 and 1.6, and the material thereof may include silicone resin, epoxy resin or acrylic, but the present invention is not limited thereto. The manufacturing method and other structural details of the light emitting device 100 in the present invention will be further described in detail below.

[0056] Please refer to Figure 2A , Figure 2A Plotted as Figure 1A and Figure 1B Flow chart of the manufacturing method of the light emitting device 100. In some embodiments of the present invention, FIG. 3A to FIG. 3H Based on Figure 2A The manufacturing method 200, cross-sectional views at various stages, Figure 3H It can be expressed as Figure 1AA cross-sectional view of the light-emitting device 100 drawn along the AA section line. In some embodiments of the present invention, the manufacturing method 200 of the light-emitting device 100 begins with step 210, and step 210 is to provide a substrate. Then, step 230 is performed to form a conductive circuit layer on the substrate, and the conductive circuit layer includes a plurality of conductive structures, each of which has at least one soldering pad, and there is a gap between two adjacent conductive structures. Then, step 250 is performed to form a plurality of conductive connecting parts, each of which is located on each soldering pad. Then, step 270 is performed to provide a plurality of semiconductor light-emitting sources, each of which corresponds to each gap to be arranged across two adjacent conductive connecting parts, and then electrically connected to the soldering pads of two adjacent ones of the conductive structure.

[0057] Please refer to Figure 2A and Figure 3A , Figure 3A A substrate 110 is provided according to step 210. The substrate 110 may be a light-transmitting substrate or an opaque substrate, and the substrate 110 may be, for example, a rigid substrate, a flexible substrate, a glass substrate, a sapphire substrate, a silicon substrate, a printed circuit board, a metal substrate, or a ceramic substrate, but is not limited thereto. In addition, the thickness of the substrate 110 may be, for example, between 0.1 mm and 0.6 mm, but the present invention is not limited thereto.

[0058] Please refer to Figure 2A and Figure 3B , Figure 3BAccording to step 230, a conductive circuit layer 120 is formed on the substrate 110. The conductive circuit layer 120 includes a plurality of conductive structures 121, wherein each conductive structure 121 has at least one pad 123. Specifically, the plurality of conductive structures 121 are regularly and continuously spaced in at least one direction, and there is a spacing D between two adjacent conductive structures 121 (for example, there is a spacing D between two adjacent conductive structures 121), and each conductive structure 121 has a first pad 123a and a second pad 123b disposed on opposite sides. The pad 123 has a thickness less than or equal to 1.5 μm. For example, the thickness of the pad 123 is less than or equal to 1.4 μm. In some embodiments of the present invention, the material of the conductive circuit layer 120 includes titanium copper alloy, molybdenum copper alloy or platinum. A conductive layer can be formed on the substrate 110 by a sputtering process or a vapor deposition process, and then the conductive layer is coated with a photoresist and subjected to a lithography and etching process, thereby obtaining a patterned conductive circuit layer 120 and a conductive structure 121. In some other embodiments of the present invention, the steps of forming a conductive layer, coating with a photoresist and etching process can be repeated to obtain a multi-layered patterned conductive circuit layer 120 and a conductive structure 121. In addition, an insulating film can be formed in the multi-layered conductive circuit layer 120 to further define the circuit structure of the conductive circuit layer 120. The material of the insulating film includes silicon dioxide or aluminum nitride, but the present invention is not limited thereto.

[0059] Please refer to Figure 2A , Figure 2B and Figures 3C to 3G . Figure 2B Further disclosure Figure 2A Detailed steps 251 to 257 regarding step 250. Figures 3C to 3G Based on Figure 2B Steps 251 to 257 are cross-sectional views at different stages. In one or more embodiments of the present invention, Figure 3C As shown, according to step 251, a reflective layer 130 is provided to cover the conductive structure 121, wherein the reflective layer 130 includes a plurality of openings 131, wherein the openings 131 respectively correspond to each interval D and are located above the interval D, and each opening 131 exposes the pads 123 of two adjacent ones of the plurality of conductive structures 121 (for example, two adjacent ones of the plurality of conductive structures 121), that is, the opening 131 exposes the first pad 123a of one conductive structure 121 and exposes the second pad 123b of another conductive structure 121 adjacent thereto.

[0060] In addition, the reflectivity of the reflective layer 130 is higher than 85%. In one embodiment, the thickness of the reflective layer is, for example, between 20 μm and 30 μm, for example, the thickness of the reflective layer 130 is 25 μm. In one embodiment, the material of the reflective layer 130 includes metal, such as silver, aluminum, chromium or an alloy thereof, or a metal mirror (such as a silver mirror, an aluminum mirror, a chromium mirror, etc.), but the present invention is not limited thereto. In one embodiment, the reflective layer 130 is a white material with high reflectivity, such as a white reflective layer made of titanium dioxide and silicone or a white reflective layer made of titanium dioxide and epoxy, but the present invention is not limited thereto. In step 251 , the reflective layer 130 is formed on the conductive circuit layer 120 . An anisotropic etching process may be used to form a plurality of openings 131 in the reflective layer 130 , thereby exposing the pads 123 on the conductive structure 121 , but the present invention is not limited thereto.

[0061] In one or more embodiments of the present invention, Figure 3D As shown, a seed layer 140a is formed according to step 253. The seed layer 140a covers the top surface of the reflective layer 130 and covers the exposed surface of the bonding pad 123 along the sidewall 131a of the opening 131, that is, the seed layer 140a covers the top surface and the side surface of the reflective layer 130, and the seed layer 140a further covers the surface of the bonding pad 123, but the present invention is not limited thereto. The material of the seed layer 140a includes copper, nickel, tantalum, silver, gold, tin or alloys thereof, and the seed layer 140a can be formed by chemical vapor deposition, such as atomic layer deposition, but the present invention is not limited thereto.

[0062] In one or more embodiments of the present invention, Figure 3E As shown, according to step 255, a photoresist layer 150a is formed on the surface of the seed layer 140a, wherein the photoresist layer 150a exposes a portion of the seed layer 140a located above the pad 123, that is, the photoresist layer 150a does not shield the pad 123 nor overlap the pad 123 in the vertical direction at least. In addition, the photoresist layer 150a covers a portion of the seed layer 140a located above the top surface of the reflective layer 130, wherein the photoresist layer 150a is completely located on the top surface of the reflective layer 130, but the present invention is not limited thereto.

[0063] In one or more embodiments of the present invention, Figure 3F and Figure 3GAs shown, according to step 257, a plurality of conductive connecting portions 160a are formed through the seed layer 140a, wherein each conductive connecting portion 160a is located on each pad 123 of the conductive structure 121. Figure 3F In the process, the seed layer 140a is subjected to a sputtering process, an electroplating process or a chemical plating process, wherein the portion of the seed layer 140a not covered by the photoresist layer 150a is thickened, thereby forming the seed layer 140a having a plurality of thickened portions 141a, wherein the thickened portions 141a are integrally formed on the seed layer 140a. Figure 3G In the embodiment of the present invention, the photoresist layer 150a is removed by a suitable solvent, and the seed layer 140a is partially removed to form the conductive connection portion 160a, for example, a portion of the seed layer 140a on the top surface and the side surface of the reflective layer 130 is removed. For example, an isotropic etching process can be used in combination with a suitable etching liquid to partially remove the seed layer 140a having a plurality of thickened portions 141a, thereby obtaining the conductive connection portion 160a, but the present invention is not limited thereto. In some other embodiments, an anisotropic etching process can be used to partially remove the seed layer 140a, thereby forming the conductive connection portion 160a. Since the conductive connection portion 160a is generated corresponding to the seed layer 140a, the material of the conductive connection portion 160a may include copper, nickel, tantalum, silver, gold, tin or alloys thereof (for example, tin alloy, silver alloy or copper alloy), but the present invention is not limited thereto. In addition, the thickness of the conductive connection portion 160 a is between 8 μm and 15 μm. The conductive connection portion 160 a contacts the side surface of the reflective layer 130 . The conductive connection portion 160 a is located in the opening 131 and contacts the side wall 131 a of the opening 131 .

[0064] Please refer to Figure 3H , based on Figure 2A In step 270 of method 200, a plurality of semiconductor light sources 170 are provided. Each semiconductor light source 170 is arranged across two adjacent conductive connecting portions 160a corresponding to each interval D. Each semiconductor light source 170 is located above each interval D, so that each semiconductor light source 170 is electrically connected to the pads 123 of two adjacent ones of the plurality of conductive structures 121, thereby completing the light-emitting device 100a.

[0065] In addition, the semiconductor light source 170 may be, for example, a light emitting diode light source, such as a light emitting diode chip. The light emitting diode chip includes a nitride semiconductor stack and two electrodes 171. The nitride semiconductor stack may include an n-type semiconductor layer, an activation layer, and a p-type semiconductor layer, wherein the semiconductor layer may be formed, for example, of semiconductor materials such as group III-V compound semiconductors and group II-VI compound semiconductors, such as GaN, InGaN, AlN, InN, AlGaN, InGaAlN and other nitride semiconductor materials. The two electrodes 171 (positive and negative electrodes) are located on the same side of the nitride semiconductor stack, the n-electrode is located on the n-type semiconductor layer, and the p-electrode is located on the p-type semiconductor layer. As Figure 3H As shown, the two electrodes 171 of the light-emitting diode chip 170 are connected to the two conductive connecting parts 160a in a flip-chip manner. Specifically, the two electrodes 171 of each light-emitting diode chip 170 are a conductive connecting part 160a arranged across the first bonding pad 123a of a conductive structure 121 and the conductive connecting part 160a on the second bonding pad 123b of another conductive structure 121 adjacent thereto. The material of the electrode 171 can be, for example, a metal material, such as gold, silver, tin, etc. The method of fixing the electrode 171 to the conductive connecting part 160a can adopt, for example, welding or eutectic process, so as to firmly fix the semiconductor light source 170 on the conductive connecting part 160a. Since the conductive connecting part 160a can be firmly bonded between the semiconductor light source 170 and the bonding pad 123, the conductive connecting part 160a can improve the conductive properties and mechanical properties between the conductive circuit layer 120 and the semiconductor light source 170.

[0066] In some embodiments of the present invention, 4A to 4H Based on Figure 2A A manufacturing method 200, with cross-sectional views at various stages, wherein Figure 4H for Figure 1A A cross-sectional view of the light emitting device 100 taken along the AA cross-sectional line. FIG. 4A to FIG. 4D and FIG. 3A to FIG. 3D The steps are similar, so I will not repeat them here. Figure 4E ,according to Figure 2BIn step 255, a photoresist layer 150b is formed on the surface of the seed layer 140b, wherein the photoresist layer 150b exposes a portion of the seed layer 140b located above the pad 123, that is, the photoresist layer 150b does not shield the pad 123 and the portion of the seed layer 140b above the pad 123 at least in the vertical direction. In addition, the photoresist layer 150b covers a portion of the seed layer 140b located on the reflective layer 130, and the photoresist layer 150b extends from the top surface of the reflective layer 130 to the side surface of the reflective layer 130. In other words, the photoresist layer 150b extends from the top surface of the reflective layer 130 to the side wall 131a of the opening 131, and a portion of the photoresist layer 150b is parallel to the side wall 131a of the opening 131, and the photoresist layer 150b covers a portion of the seed layer 140b extending from the top surface of the reflective layer 130 to the side wall 131a of the opening 131, but the present invention is not limited thereto. Specifically, the material of the seed layer 140b includes copper, nickel, tantalum, silver, gold, tin or alloys thereof, and the seed layer 140b is made by chemical vapor deposition, for example, the seed layer 140b is made by atomic layer deposition, but the invention is not limited thereto.

[0067] In one or more embodiments of the present invention, Figure 4F and Figure 4G As shown, according to step 257, a plurality of conductive connecting portions 160b are formed through the seed layer 140b, wherein each conductive connecting portion 160b is located on the pad 123 of each conductive structure 121. Figure 4F In the process, the seed layer 140b is subjected to a sputtering process, an electroplating process or a chemical plating process, and the portion of the seed layer 140b not covered by the photoresist layer 150a is thickened, thereby forming a seed layer 140b having a plurality of thickened portions 141b, wherein the thickened portions 141b are integrally formed on the seed layer 140b. Since the photoresist layer 150b covers a portion of the seed layer 140b from the top surface of the reflective layer 130 to the sidewall 131a of the opening 131, a recessed portion 143b is formed between the thickened portion 141b of the seed layer 140b and the reflective layer 130, but the present invention is not limited thereto.

[0068] exist Figure 4G In some embodiments of the present invention, the photoresist layer 150b is removed by a suitable solvent, and the seed layer 140b is partially removed to form the conductive connection portion 160b, for example, a portion of the seed layer 140b on the top surface and the side surface of the reflective layer 130 is removed. In some embodiments of the present invention, an isotropic etching process can be used in combination with a suitable etching liquid to partially remove the seed layer 140b to obtain the conductive connection portion 160b, but the present invention is not limited thereto. In other embodiments of the present invention, an anisotropic etching process is used to partially remove the seed layer 140b to form the conductive connection portion 160b. Figure 4GAs can be seen from the figure, the conductive connection portion 160b is spaced apart from the reflective layer 130, wherein the conductive connection portion 160b is located in the opening 131 and is separated from the sidewall 131a of the opening 131. Since the conductive connection portion 160b is generated through the seed layer 140b, the material of the conductive connection portion 160b may include copper, nickel, rhodium, silver, gold, tin or alloys thereof (such as tin alloy, silver alloy or copper alloy), but the present invention is not limited thereto.

[0069] Please refer to Figure 4H , based on Figure 2A In step 270 of the method 200, a plurality of semiconductor light sources 170 are provided, each semiconductor light source 170 is arranged across two adjacent conductive connection parts 160b corresponding to each interval D, so that each semiconductor light source 170 is electrically connected to the pads 123 of two adjacent ones of the plurality of conductive structures 121, thereby completing the light emitting device 100b. Specifically, each semiconductor light source 170 is a conductive connection part 160b arranged across the first pad 123a of a conductive structure 121 and the conductive connection part 160b on the second pad 123b of another conductive structure 121 adjacent thereto. In addition, the semiconductor light source 170 includes two electrodes 171 connected to the two conductive connection parts 160b in a flip chip manner, and a welding process can be performed on the pads 123, the conductive connection part 160b and the semiconductor light source 170 to firmly fix the semiconductor light source 170 on the conductive connection part 160b. Since the conductive connection portion 160b can be firmly bonded between the semiconductor light source 170 and the pad 123, the conductive connection portion 160b can improve the conductive properties and mechanical properties between the conductive circuit layer 120 and the semiconductor light source 170. Specifically, the width of the conductive connection portion 160b is substantially the same as the width of the electrode 171, so when the conductive connection portion 160b and the electrode 171 are welded by a welding furnace, the semiconductor light source 170 can be accurately aligned at a specific position on the conductive circuit layer 120, and even if the size of the semiconductor light source 170 is very small, it can be correctly arranged on the conductive circuit layer 120.

[0070] In some embodiments of the present invention, FIG. 5A to FIG. 5E Based on Figure 2A The manufacturing method 200, cross-sectional views at various stages, Figure 5E for Figure 1A A cross-sectional view of the light emitting device 100 taken along the AA cross-sectional line. FIG. 5A to FIG. 5B and FIG. 3A to FIG. 3B The steps are similar, so I will not repeat them here. FIG. 5C to FIG. 5D , FIG. 5C to FIG. 5D According to step 250 of the manufacturing method 200, a plurality of conductive connecting portions 160c are formed, wherein each conductive connecting portion 160c is located on each bonding pad 123. Figure 5C In the embodiment, the reflective layer 130 covers the conductive structure 121, wherein the reflective layer 130 includes a plurality of openings 131 corresponding to the intervals D, each of which is used to expose the pads 123 of two adjacent conductive structures 121. Figure 5D In each opening 131, a conductive paste is formed on each pad 123 by a printing process or a spraying process. The conductive paste is, for example, a copper paste, a silver paste, a gold-tin paste, or a solder paste. Then, a heat drying process is performed on the conductive paste to form a conductive connection portion 160c. The conductive connection portion 160c contacts the side of the reflective layer 130, so that the conductive connection portion 160c contacts the side wall 131a of the opening 131. In some embodiments of the present invention, the process for printing the conductive paste is a steel plate printing process, which can accurately control the size and shape of the conductive connection portion 160c so as to effectively join the pad 123 and the electrode 171.

[0071] Please refer to Figure 5E , based on Figure 2A In step 270, a plurality of semiconductor light sources 170 are provided, each semiconductor light source 170 is arranged across two adjacent conductive connection parts 160c corresponding to each interval D, so that each semiconductor light source 170 is electrically connected to the pads 123 of two adjacent ones of the plurality of conductive structures 121, thereby obtaining a light-emitting device 100c. Specifically, each semiconductor light source 170 is a conductive connection part 160c arranged across the first pad 123a of a conductive structure 121 and the conductive connection part 160c on the second pad 123b of another conductive structure 121 adjacent thereto. In addition, the two electrodes 171 of the semiconductor light source 170 are connected to the two conductive connection parts 160c in a flip chip manner, and a welding process can be performed on the pads 123, the conductive connection part 160c and the semiconductor light source 170 to firmly fix the semiconductor light source 170 on the conductive connection part 160c. Since the conductive connection portion 160 c can be firmly bonded between the semiconductor light source 170 and the pad 123 , the conductive connection portion 160 c can improve the conductive properties and mechanical properties between the conductive circuit layer 120 and the semiconductor light source 170 .

[0072] The following paragraphs introduce Figure 1A and Figure 1B In the different embodiments of the light emitting device 100, some details have been introduced in detail in the previous paragraphs and will not be repeated. Figure 3H, the light emitting device 100a includes a substrate 110, a conductive circuit layer 120, a plurality of conductive connection parts 160a and a plurality of semiconductor light sources 170. The conductive circuit layer 120 is located on the substrate 110, and the conductive circuit layer 120 includes a plurality of conductive structures 121, wherein each conductive structure 121 has at least one pad 123, and there is a gap D between two adjacent conductive structures 121. In addition, each conductive connection part 160a is disposed on each corresponding pad 123, and each semiconductor light source 170 is disposed across two adjacent conductive connection parts 160a corresponding to each gap D, and is electrically connected to the pads 123 of two adjacent conductive structures 121. The plurality of conductive structures 121 are regularly and continuously spaced in at least one direction, and there is a gap D between adjacent conductive structures 121, and each conductive structure 121 has a first pad 123a and a second pad 123b disposed on opposite sides.

[0073] In some embodiments of the present invention, the light emitting device 100a further includes a reflective layer 130, which is disposed on the conductive circuit layer 120 and covers the conductive structure 121, wherein the reflective layer 130 includes a plurality of openings 131, which correspond to and are connected above each interval D, and each opening 131 exposes the pads of two adjacent conductive structures, that is, the opening 131 exposes the first pad 123a of a conductive structure 121 and exposes the second pad 123b of another conductive structure 121 adjacent thereto. Specifically, each semiconductor light emitting source 170 is a conductive connecting portion 160a disposed across the first pad 123a of a conductive structure 121 and the conductive connecting portion 160a on the second pad 123b of another conductive structure 121 adjacent thereto. In addition, the conductive connecting portion 160a contacts the side surface of the reflective layer 130, so that the conductive connecting portion 160a contacts the side wall 131a of the opening 131, so as to fix the semiconductor light emitting source 170. The reflective layer 130 may be a metal reflective layer (including a metal mirror reflective layer) or a white reflective layer. The manufacturing method and other details of the reflective layer 130 have been introduced in detail in the previous paragraphs and will not be repeated here.

[0074] In one or more embodiments of the present invention, the two electrodes 171 of the semiconductor light emitting source 170 are respectively located on two adjacent conductive connecting portions 160a, and the two electrodes 171 are electrically connected to the two adjacent conductive connecting portions 160a in a flip chip manner, and further electrically connected to the pads 123 of two adjacent ones of the plurality of conductive structures 121. In addition, the horizontal position of the electrode 171 does not exceed the horizontal position of the reflective layer 130, and the contact surface between the electrode 171 and the conductive connecting portion 160a is lower than the top surface of the reflective layer 130, so the reflective layer 130 can effectively adjust the light emitted by the semiconductor light emitting source 170, but the present invention is not limited thereto.

[0075] Please refer to Figure 4H , the light emitting device 100b includes a substrate 110, a conductive circuit layer 120, a plurality of conductive connecting parts 160b and a plurality of semiconductor light emitting sources 170. The light emitting device 100b is substantially the same as the light emitting device 100a, and the main difference is that the conductive connecting part 160b is spaced apart from the side of the reflective layer 130, that is, the conductive connecting part 160b is spaced apart from the side wall 131a of the opening 131. The width of the conductive connecting part 160b is substantially the same as the width of the electrode 171, so when the conductive connecting part 160b and the electrode 171 are welded by a welding furnace, the semiconductor light emitting source 170 can be accurately aligned at a specific position on the conductive circuit layer 120, and even if the size of the semiconductor light emitting source 170 is very small, it can be accurately arranged on the conductive circuit layer 120. The manufacturing method and other details of the conductive connecting part 160b have been introduced in the previous paragraphs, so they will not be repeated.

[0076] Please refer to Figure 5E , the light emitting device 100c includes a substrate 110, a conductive circuit layer 120, a plurality of conductive connection parts 160c and a plurality of semiconductor light sources 170. The light emitting device 100b is substantially the same as the light emitting device 100c, and the main difference is the conductive connection part 160c. The conductive connection part 160c is made of a conductive paste, which can be a copper paste, a silver paste, a gold-tin paste or a solder paste. The conductive paste can be formed on the pad 123 by printing or spraying, and the conductive paste is subjected to a thermal drying process to form the conductive connection part 160c. In some embodiments of the present invention, the process for printing the conductive paste is a steel plate printing process, and the steel plate printing process can very accurately control the size and shape of the conductive connection part 160c, so as to effectively bond the pad 123 and the electrode 171. In addition, the conductive connection part 160c contacts the side of the reflective layer 130, and the conductive connection part 160c contacts the side wall 131a of the opening 131, but the present invention is not limited thereto. In one embodiment, the conductive connection portion 160 c is spaced apart from the reflective layer 130 , that is, the conductive connection portion 160 c is spaced apart from the sidewall 131 a of the opening 131 , so as to facilitate fixing the semiconductor light source 170 .

[0077] In summary, the present invention provides a light-emitting device having a special conductive connection portion and a manufacturing method thereof, wherein the conductive connection portion can make the connection between the semiconductor light source of the light-emitting device and the solder pad more stable, thereby improving the conductive properties and mechanical properties of the light-emitting device. In addition, the light-emitting device of the present invention can be applied to a variety of light-emitting devices, a variety of displays or backlight modules of liquid crystal displays.

Claims

1. A light emitting device, characterized in that: include: a substrate; A conductive circuit layer is located on the substrate, the conductive circuit layer includes a plurality of conductive structures, each of which has at least one pad, and there is a gap between two adjacent conductive structures; A plurality of conductive connecting portions, each of which is disposed on a corresponding bonding pad; A plurality of semiconductor light sources, each of which corresponds to each of the intervals and is arranged across two adjacent conductive connecting portions, and is further electrically connected to the pads of two adjacent conductive structures; and A reflective layer is disposed on the conductive circuit layer and covers the plurality of conductive structures, wherein the reflective layer comprises a plurality of openings respectively corresponding to the intervals, and the pads of the two adjacent ones are located in one of the plurality of openings.

2. The light emitting device according to claim 1, characterized in that: The plurality of conductive connection portions contact a side surface of the reflective layer.

3. The light emitting device according to claim 1, characterized in that: The plurality of conductive connection portions are spaced apart from the side surface of the reflective layer.

4. The light emitting device according to claim 1, characterized in that: The material of the plurality of conductive connection parts includes copper, nickel, tantalum, silver, gold, tin or alloys thereof.

5. The light emitting device according to claim 1, characterized in that: The plurality of conductive connection parts are made of copper paste, silver paste, gold-tin paste or solder paste.

6. The light emitting device according to claim 1, characterized in that: Each of the semiconductor light emitting sources is a light emitting diode chip, which includes two electrodes respectively located on two adjacent conductive connecting parts.

7. The light emitting device according to claim 6, characterized in that: The horizontal position of the electrode does not exceed the horizontal position of the reflective layer.

8. The light emitting device according to claim 1, characterized in that: The reflective layer is a white reflective layer or a metal reflective layer.

9. A method for manufacturing a light emitting device, characterized in that: The following steps are involved: providing a substrate; Forming a conductive circuit layer on the substrate, the conductive circuit layer comprising a plurality of conductive structures, wherein each of the conductive structures has at least one pad, and there is a gap between two adjacent conductive structures; Forming a plurality of conductive connection portions, wherein each of the conductive connection portions is located on each of the bonding pads, wherein forming the plurality of conductive connection portions comprises providing a reflective layer covering the plurality of conductive structures, wherein the reflective layer comprises a plurality of openings respectively corresponding to the intervals, and each of the openings is used to expose the two adjacent bonding pads; and A plurality of semiconductor light sources are provided. Each semiconductor light source corresponds to each of the intervals and is arranged across two adjacent conductive connecting portions, and is further electrically connected to the pads of two adjacent conductive structures.

10. The manufacturing method according to claim 9, characterized in that: Forming the plurality of conductive connecting parts further comprises the following steps: forming a seed layer, the seed layer covering the top surface of the reflective layer and covering the exposed surface of the pad along the sidewalls of the plurality of openings; forming a photoresist layer on the surface of the seed layer, wherein the photoresist layer exposes a portion of the seed layer above the bonding pad; and The plurality of conductive connecting parts are formed through the seed layer.

11. The manufacturing method according to claim 10, characterized in that: The photoresist layer covers a portion of the seed layer located on the top surface of the reflective layer.

12. The manufacturing method according to claim 10, characterized in that: The photoresist layer covers a portion of the seed layer extending from the top surface of the reflective layer to the sidewalls of the plurality of openings.

13. The manufacturing method according to claim 10, characterized in that: Forming the plurality of conductive connecting parts further comprises the following steps: forming a plurality of thickened portions on the seed layer; and The photoresist layer is removed and the seed layer is partially removed to obtain the plurality of conductive connection portions.

14. The manufacturing method according to claim 10, characterized in that: Forming the plurality of conductive connecting parts further comprises the following steps: forming a plurality of thickened portions on the seed layer; and The photoresist layer is removed and at least a portion of the seed layer on the top surface of the reflective layer is removed, thereby obtaining the plurality of conductive connection portions.

15. The manufacturing method according to claim 10, characterized in that: The material of the seed layer includes copper, nickel, tantalum, silver, gold, tin or alloys thereof.

16. The manufacturing method according to claim 9, characterized in that: Forming the plurality of conductive connecting parts further comprises the following steps: Conductive paste is formed on each of the pads by a printing process or a spraying process to form the plurality of conductive connecting portions.

17. The manufacturing method according to claim 9, characterized in that: Forming the plurality of conductive connection portions comprises: In each of the openings, a conductive paste is formed on each of the pads by a printing process or a spraying process to form the plurality of conductive connecting portions, wherein the plurality of conductive connecting portions contact the side surface of the reflective layer.

18. The manufacturing method according to claim 16 or 17, characterized in that: The printing process is a steel plate printing process.

19. The manufacturing method according to claim 9, characterized in that: Each of the semiconductor light emitting sources is a light emitting diode chip, which includes two electrodes electrically connected to two adjacent conductive connection parts in a flip chip manner.

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