Semiconductor device and method of manufacturing the same

Abstract

A semiconductor device capable of improving characteristics and a manufacturing method thereof are provided. According to an embodiment, a semiconductor device includes: first to third electrodes; first and second semiconductor regions; and first and second insulating members. The first semiconductor region includes Al x1 Ga 1‑x1 N (0 ≤ x1 < 1). The second semiconductor region includes Al x2 Ga 1‑x2 N (x1

Description

[0001] This application is based on Japanese Patent Application No. 2021-006881 (Filing date: January 20, 2021) and Japanese Patent Application No. 2021-115503 (Filing date: July 13, 2021) and claims priority benefit from these applications. This application incorporates the entire contents of these applications by reference. TECHNICAL FIELD

[0002] Embodiments of the present application relate to a semiconductor device and a method for manufacturing the same. BACKGROUND

[0003] For example, in a semiconductor device such as a transistor, improvement of characteristics is desired. SUMMARY

[0004] Embodiments of the present application provide a semiconductor device and a method for manufacturing the same, which can improve characteristics.

[0005] Means for solving the problem

[0006] According to an embodiment of the present application, a semiconductor device includes a first electrode, a second electrode, a third electrode, a first semiconductor region, a second semiconductor region, a first insulating member, and a second insulating member. A direction from the first electrode to the second electrode is along a first direction. The third electrode includes a first electrode portion. A position of the first electrode portion in the first direction is between a position of the first electrode in the first direction and a position of the second electrode in the first direction. The first semiconductor region includes Alx1Ga1-x1N (0 ≤ x1 < 1). The first semiconductor region includes a first partial region, a second partial region, a third partial region, a fourth partial region, and a fifth partial region. A direction from the first partial region to the first electrode is along a second direction intersecting the first direction. A direction from the second partial region to the second electrode is along the second direction. A direction from the third partial region to the first electrode portion is along the second direction. The fourth partial region is between the first partial region and the third partial region in the first direction. The fifth partial region is between the third partial region and the second partial region in the first direction. The second semiconductor region includes Alx2Ga1-x2N (0 ≤ x2 < 1). The second semiconductor region includes a sixth partial region, a seventh partial region, an eighth partial region, a ninth partial region, and a tenth partial region. A direction from the sixth partial region to the second electrode is along the second direction. A direction from the seventh partial region to the first electrode is along the second direction. The eighth partial region is between the sixth partial region and the seventh partial region in the first direction. The ninth partial region is between the seventh partial region and the eighth partial region in the first direction. The tenth partial region is between the eighth partial region and the seventh partial region in the first direction. x1 Ga 1-x1 N (0 ≤ x1 < 1). The first semiconductor region includes a first partial region, a second partial region, a third partial region, a fourth partial region, and a fifth partial region. A direction from the first partial region to the first electrode is along a second direction intersecting the first direction. A direction from the second partial region to the second electrode is along the second direction. A direction from the third partial region to the first electrode portion is along the second direction. The fourth partial region is between the first partial region and the third partial region in the first direction. The fifth partial region is between the third partial region and the second partial region in the first direction. The second semiconductor region includes Alx2Ga1-x2N (0 ≤ x2 < 1). The second semiconductor region includes a sixth partial region, a seventh partial region, an eighth partial region, a ninth partial region, and a tenth partial region. A direction from the sixth partial region to the second electrode is along the second direction. A direction from the seventh partial region to the first electrode is along the second direction. The eighth partial region is between the sixth partial region and the seventh partial region in the first direction. The ninth partial region is between the seventh partial region and the eighth partial region in the first direction. The tenth partial region is between the eighth partial region and the seventh partial region in the first direction. x2 Ga 1-x2N(x1 < x2 ≤ 1). The second semiconductor region includes a first semiconductor portion and a second semiconductor portion. A direction from the fourth partial region to the first semiconductor portion is along the second direction. A direction from the fifth partial region to the second semiconductor portion is along the second direction. The first insulating member includes at least any one of silicon and aluminum and oxygen. The first insulating member includes a first insulating portion. The first insulating portion is between the third partial region and the first electrode portion. The second insulating member includes silicon and nitrogen. The second insulating member includes a first insulating region and a second insulating region. A position of the first insulating region in the first direction is between the position of the first electrode in the first direction and the position of the first electrode portion in the first direction. A position of the second insulating region in the first direction is between the position of the first insulating region in the first direction and the position of the first electrode portion in the first direction. The first semiconductor portion is between the fourth partial region and the first insulating region and between the fourth partial region and the second insulating region. The second insulating region has at least any one of a second nitrogen concentration higher than a first nitrogen concentration in the first insulating region, a second hydrogen concentration lower than a first hydrogen concentration in the first insulating region, and a second density higher than a first density in the first insulating region.

[0007] According to the semiconductor device of the above structure, a semiconductor device and a manufacturing method thereof with improved characteristics can be provided. BRIEF DESCRIPTION OF DRAWINGS

[0008] Figure 1 is a schematic cross-sectional view illustrating a semiconductor device of a first embodiment.

[0009] Figure 2 is a schematic cross-sectional view illustrating a semiconductor device of a first embodiment.

[0010] Figure 3 (a) and Figure 3 (b) are graphs illustrating characteristics of a semiconductor device.

[0011] Figure 4 is a graph illustrating characteristics of a semiconductor device.

[0012] Figure 5 is a schematic cross-sectional view illustrating a semiconductor device of a first embodiment.

[0013] Figure 6 is a schematic cross-sectional view illustrating a semiconductor device of a first embodiment.

[0014] Figure 7 is a schematic cross-sectional view illustrating a semiconductor device of a first embodiment.

[0015] Figure 8 is a schematic cross-sectional view illustrating a semiconductor device of Embodiment 1.

[0016] Figure 9 is a schematic cross-sectional view illustrating a semiconductor device of Embodiment 1.

[0017] Figure 10 (a) ~ Figure 10 (d) are schematic cross-sectional views illustrating a method for manufacturing a semiconductor device of Embodiment 2.

[0018] Figure 11 (a) ~ Figure 11 (d) are schematic cross-sectional views illustrating a method for manufacturing a semiconductor device of Embodiment 2.

[0019] (Explanation of Reference Numerals)

[0020] 10: first semiconductor region; 10H: hole; 10M: semiconductor member; 11 to 15: first to fifth partial regions; 18b: nitride layer; 18s: base; 20: second semiconductor region; 21, 22: first and second semiconductor portions; 30: nitride member; 41: first insulating member; 41a to 41e: first to fifth insulating portions; 42: second insulating member; 42a to 42h: first to eighth insulating regions; 43: third insulating member; 51: first electrode; 52: second electrode; 52T: terminal; 53: third electrode; 53a to 53c: first to third electrode portions; 61: first conductive member; 61C: connecting member; 61T: terminal; 110 to 116: semiconductor device; F1, F2: first and second insulating films; IL: leakage current; M1: mask material; Rt1: thickness ratio; VC1: variation amount; t1 to t4: first to fourth thicknesses. DETAILED DESCRIPTION

[0021] Hereinafter, each embodiment of the present application will be described with reference to the drawings.

[0022] The drawings are schematic or conceptual, and the relationship between the thicknesses and widths of the respective portions, the ratios of the sizes among the portions, and the like, are not necessarily the same as those of the actual ones. On the occasion of indicating the same portions, according to the drawings, there are cases where the dimensions and the ratios are different from each other.

[0023] In the present application specification and the respective drawings, the same symbol is added to the same elements as those described with respect to the already appeared drawings, and the detailed description is appropriately omitted.

[0024] (Embodiment 1)

[0025] Figure 1is a schematic cross-sectional view illustrating a semiconductor device of Embodiment 1.

[0026] As Figure 1 illustrated, the semiconductor device 110 of the embodiment includes a first electrode 51, a second electrode 52, a third electrode 53, a first semiconductor region 10, a second semiconductor region 20, a first insulating member 41, and a second insulating member 42.

[0027] A direction from the first electrode 51 to the second electrode 52 is along a first direction. The first direction is taken as an X-axis direction. One direction perpendicular to the X-axis direction is taken as a Z-axis direction. A direction perpendicular to the X-axis direction and the Z-axis direction is taken as a Y-axis direction.

[0028] The third electrode 53 includes a first electrode portion 53a. A position of the first electrode portion 53a in the first direction (X-axis direction) is between a position of the first electrode 51 in the first direction and a position of the second electrode 52 in the first direction.

[0029] The first semiconductor region 10 includes Al x1 Ga 1-x1 N (0 ≤ x1 < 1). The composition ratio x1 is, for example, 0 or more and less than 0.1. The first semiconductor region 10 includes, for example, GaN.

[0030] The first semiconductor region 10 includes a first partial region 11, a second partial region 12, a third partial region 13, a fourth partial region 14, and a fifth partial region 15. A direction from the first partial region 11 to the first electrode 51 is along a second direction intersecting the first direction. The second direction is, for example, the Z-axis direction. A direction from the second partial region 12 to the second electrode 52 is along the second direction. A direction from the third partial region 13 to the first electrode portion 53a is along the second direction. The fourth partial region 14 is between the first partial region 11 and the third partial region 13 in the first direction (X-axis direction). The fifth partial region 15 is between the third partial region 13 and the second partial region 12 in the first direction.

[0031] The second semiconductor region 20 includes Al x2 Ga 1-x2 N (x1 < x2 ≤ 1). The composition ratio x2 is, for example, 0.1 or more and 0.35 or less. The second semiconductor region 20 is, for example, AlGaN. Between the first semiconductor region 10 and the second semiconductor region 20, a region including AlN can be provided. A thickness (length in the Z-axis direction) of the region including AlN is, for example, 1.5 nm or less.

[0032] The second semiconductor region 20 includes the first semiconductor portion 21 and the second semiconductor portion 22. The direction from the fourth partial region 14 to the first semiconductor portion 21 is along the second direction (for example, the Z-axis direction). The direction from the fifth partial region 15 to the second semiconductor portion 22 is along the second direction.

[0033] In this example, the semiconductor device 110 includes a base 18s and a nitride layer 18b. The base 18s can be a substrate, for example. The base 18s can be a silicon substrate or the like, for example. The nitride layer 18b is provided on the base 18s. The first semiconductor region 10 is provided on the nitride layer 18b. The second semiconductor region 20 is provided on the first semiconductor region 10. The nitride layer 18b is a buffer layer, for example. The nitride layer 18b includes Al, Ga, and nitrogen. The first semiconductor region 10 and the second semiconductor region 20 are included in the semiconductor member 10M, for example.

[0034] The first insulating member 41 includes at least either one of silicon and aluminum and oxygen. The first insulating member 41 includes SiO2, Al2O3, or AlSiO, for example. The first insulating member 41 can include nitrogen. The first insulating member 41 can include AlON or SiON. The thickness of the first insulating member 41 is 20 nm or more and 150 nm or less, for example. With such a thickness, a high insulating withstand voltage and a low channel resistance can be obtained.

[0035] The first insulating member 41 includes a first insulating portion 41a. The first insulating portion 41a is between the third partial region 13 and the first electrode portion 53a.

[0036] The second insulating member 42 includes silicon and nitrogen. The concentration of nitrogen in the second insulating member 42 is higher than the concentration of nitrogen in the first insulating member 41. The concentration of oxygen in the first insulating member 41 is higher than the concentration of oxygen in the second insulating member 42.

[0037] The second insulating member 42 includes a first insulating region 42a and a second insulating region 42b. The position of the first insulating region 42a in the first direction (X-axis direction) is between the position of the first electrode 51 in the first direction and the position of the first electrode portion 53a in the first direction. The position of the second insulating region 42b in the first direction is between the position of the first insulating region 42a in the first direction and the position of the first electrode portion 53a in the first direction. The first semiconductor portion 21 is between the fourth partial region 14 and the first insulating region 42a and between the fourth partial region 14 and the second insulating region 42b.

[0038] The distance between the first electrode 51 and the first electrode portion 53a is longer than the distance between the first electrode portion 53a and the second electrode 52, for example.

[0039] The first electrode 51 is electrically connected to at least either of the first partial region 11 and the first semiconductor portion 21, for example. The second electrode 52 is electrically connected to at least either of the second partial region 12 and the second semiconductor portion 22, for example.

[0040] The current flowing between the first electrode 51 and the second electrode 52 can be controlled by the potential of the third electrode 53. The potential of the third electrode 53 is a potential with respect to the potential of the second electrode 52, for example. The first electrode 51 is a drain electrode, for example. The second electrode 52 is a source electrode, for example. The third electrode 53 is a gate electrode, for example. The first insulating portion 41a functions as a gate insulating film, for example.

[0041] The semiconductor device 110 is a transistor, for example. A carrier region (for example, two-dimensional electron gas) is formed in a portion of the first semiconductor region 10 facing the second semiconductor region 20. The semiconductor device 110 is a HEMT (High Electron Mobility Transistor), for example.

[0042] In an embodiment, the material of the second insulating region 42b is different from the material of the first insulating region 42a, for example. In an embodiment, the second insulating region 42b has at least any one of a second nitrogen concentration higher than a first nitrogen concentration in the first insulating region 42a, a second hydrogen concentration lower than a first hydrogen concentration in the first insulating region 42a, and a second density higher than a first density in the first insulating region 42a. By such a second insulating member 42, for example, fluctuation of threshold voltage can be suppressed. The threshold voltage can be stabilized. For example, current collapse can be suppressed. For example, a high withstand voltage can be obtained.

[0043] For example, the second nitrogen concentration in the second insulating region 42b near the third electrode 53 is higher than the first nitrogen concentration in the first insulating region 42a. Thereby, a high withstand voltage can be easily obtained. For example, the second hydrogen concentration in the second insulating region 42b near the third electrode 53 is lower than the first hydrogen concentration in the first insulating region 42a. Thereby, a high withstand voltage can be easily obtained. For example, the second density in the second insulating region 42b near the third electrode 53 is higher than the first density in the first insulating region 42a. Thereby, a high withstand voltage can be easily obtained. According to the embodiment, a semiconductor device with improved characteristics can be provided.

[0044] For example, the first nitrogen concentration in the first insulating region 42a near the first electrode 51 is lower than the second nitrogen concentration in the second insulating region 42b. This makes it easier to suppress current collapse. For example, the first hydrogen concentration in the first insulating region 42a near the first electrode 51 is higher than the second hydrogen concentration in the second insulating region 42b. This makes it easier to suppress current collapse. For example, the first density in the first insulating region 42a near the first electrode 51 is lower than the second density in the second insulating region 42b. This makes it easier to suppress current collapse. According to the embodiment, a semiconductor device with improved characteristics can be provided.

[0045] For example, the ratio of the silicon concentration to the nitrogen concentration in the second insulating region 42b is less than 0.75. The second insulating region 42b is, for example, nitrogen-rich silicon nitride.

[0046] For example, the ratio of the silicon concentration to the nitrogen concentration in the first insulating region 42a is higher than 0.75. The first insulating region 42a is, for example, silicon-rich silicon nitride.

[0047] In one example, such a second insulating member 42 is obtained by separately forming a film to be the first insulating region 42 a and a film to be the second insulating region 42 b when forming the second insulating member 42 .

[0048] In the embodiment, the boundary between the first insulating region 42a and the second insulating region 42b may be clear or unclear. As will be described later, a region with intermediate characteristics may be provided between these insulating regions.

[0049] like Figure 1 As shown, the second insulating member 42 may also include a third insulating region 42c and a fourth insulating region 42d. The position of the third insulating region 42c in the first direction (X-axis direction) is between the position of the first electrode portion 53a in the first direction and the position of the second electrode 52 in the first direction. The position of the fourth insulating region 42d in the first direction is between the position of the third insulating region 42c in the first direction and the position of the second electrode 52 in the first direction. The second semiconductor portion 22 is between the fifth partial region 15 and the third insulating region 42c, and between the fifth partial region 15 and the fourth insulating region 42d.

[0050] The third insulating region 42c has at least one of a third nitrogen concentration higher than the fourth nitrogen concentration in the fourth insulating region 42d, a third hydrogen concentration lower than the fourth hydrogen concentration in the fourth insulating region 42d, and a third density higher than the fourth density in the fourth insulating region 42d. This third insulating region 42c facilitates achieving a high breakdown voltage. For example, gate leakage current can be reduced.

[0051] For example, the material of the third insulating region 42c can be substantially the same as the material of the second insulating region 42b. The material of the fourth insulating region 42d can be substantially the same as the material of the first insulating region 42a.

[0052] For example, the ratio of the concentration of silicon to the concentration of nitrogen in the third insulating region 42c is lower than 0.75. For example, the ratio of the concentration of silicon to the concentration of nitrogen in the fourth insulating region 42d is higher than 0.75.

[0053] As shown in FIG. 6, in this example, at least a part of the first electrode portion 53a is between the first semiconductor portion 21 and the second semiconductor portion 22 in the first direction (X-axis direction). For example, at least a part of the first electrode portion 53a is between the fourth partial region 14 and the fifth partial region 15 in the first direction. The third electrode 53 is, for example, a trench gate electrode. For example, a high threshold voltage is easily obtained. For example, a normally-off characteristic can be obtained. Figure 1

[0054] In this example, the third electrode 53 further includes a second electrode portion 53b. A part of the first semiconductor portion 21 is between the fourth partial region 14 and the second electrode portion 53b. The second electrode portion 53b is, for example, a eave portion. At least a part of the second insulating region 42b is between the part of the first semiconductor portion 21 and the second electrode portion 53b.

[0055] In this example, the third electrode 53 further includes a third electrode portion 53c. A part of the second semiconductor portion 22 is between the fifth partial region 15 and the third electrode portion 53c. The third electrode portion 53c is, for example, a eave portion. At least a part of the third insulating region 42c is between the part of the second semiconductor portion 22 and the third electrode portion 53c.

[0056] By providing the second electrode portion 53b and the third electrode portion 53c, for example, a low resistance can be obtained in the third electrode 53. In a case where such a eave portion is provided, by providing the second insulating region 42a and the third insulating region 42c described above, a high withstand voltage and a stable threshold voltage are easily obtained.

[0057] As shown in FIG. 6, in this example, at least a part of the first electrode portion 53a is between the first semiconductor portion 21 and the second semiconductor portion 22 in the first direction (X-axis direction). For example, at least a part of the first electrode portion 53a is between the fourth partial region 14 and the fifth partial region 15 in the first direction. The third electrode 53 is, for example, a trench gate electrode. For example, a high threshold voltage is easily obtained. For example, a normally-off characteristic can be obtained. Figure 1

[0058] As shown in FIG. 6, in this example, at least a part of the first electrode portion 53a is between the first semiconductor portion 21 and the second semiconductor portion 22 in the first direction (X-axis direction). For example, at least a part of the first electrode portion 53a is between the fourth partial region 14 and the fifth partial region 15 in the first direction. The third electrode 53 is, for example, a trench gate electrode. For example, a high threshold voltage is easily obtained. For example, a normally-off characteristic can be obtained. Figure 1 ​​As shown, the first insulating member 41 may include a fourth insulating portion 41d and a fifth insulating portion 41e. For example, the first insulating region 42a is between the first semiconductor portion 21 and the fourth insulating portion 41d, and the fourth insulating region 42d is between the second semiconductor portion 22 and the fifth insulating portion 41e.

[0059] like Figure 1 As shown, in this example, the semiconductor device 110 further includes a nitride component 30. The nitride component 30 includes Al x3 Ga 1-x3 N(x2 <x3≤1)。组成比x3例如是0.8以上且1以下。氮化物构件30例如是AlN。氮化物构件30的至少一部分在第3部分区域13与第1绝缘部分41a之间。通过设置氮化物构件30,能够获得更高的电子迁移率。例如,能够获得更低的导通电阻。氮化物构件30的厚度例如是1.5nm以上且10nm以下。通过氮化物构件30的厚度是1.5nm以上,例如能够获得高的沟道迁移率。通过氮化物构件30的厚度是10nm以下,例如,氮化物构件30变得稳定,栅泄漏电流被抑制。

[0060] For example, a portion of the nitride member 30 may be provided between the fourth partial region 14 and the first electrode portion 53a. For example, a portion of the nitride member 30 may be provided between the first electrode portion 53a and the fifth partial region 15. For example, a portion of the nitride member 30 may be provided between the first semiconductor portion 21 and the first electrode portion 53a. For example, a portion of the nitride member 30 may be provided between the second electrode portion 53a and the second semiconductor portion 22.

[0061] For example, the first insulating region 42a may be provided between the first semiconductor portion 21 and a portion of the nitride component 30. The second insulating region 42b may be provided between the first semiconductor portion 21 and a portion of the nitride component 30. The third insulating region 42c may be provided between the second semiconductor portion 22 and a portion of the nitride component 30. The fourth insulating region 42d may be provided between the second semiconductor portion 22 and a portion of the nitride component 30.

[0062] Figure 2 This is a schematic cross-sectional view illustrating the semiconductor device according to the first embodiment.

[0063] like Figure 2As shown, the semiconductor device 111 of the embodiment also includes a first electrode 51, a second electrode 52, a third electrode 53, a first semiconductor region 10, a second semiconductor region 20, a first insulating member 41, and a second insulating member 42. In the semiconductor device 111, the thickness of the first insulating region 42a is different from the thickness of the second insulating region 42b, and the thickness of the fourth insulating region 42d is different from the thickness of the third insulating region 42c. The remaining structure of the semiconductor device 111 can be the same as that of the semiconductor device 110.

[0064] like Figure 1 As shown, the thickness of the first insulating region 42a along the second direction (Z-axis direction) is set to a first thickness t1. The thickness of the second insulating region 42b along the second direction is set to a second thickness t2. The thickness of the third insulating region 42c along the second direction is set to a third thickness t3. The thickness of the fourth insulating region 42d along the second direction is set to a fourth thickness t4. In this example, the second thickness t2 is thinner than the first thickness t1. The third thickness t3 is thinner than the fourth thickness t4. The third thickness t3 can be substantially the same as the second thickness t2. The fourth thickness t4 can be substantially the same as the first thickness t1.

[0065] Since the second thickness t2 is thin, the variation of the threshold voltage can be further suppressed. Since the third thickness t3 is thin, the variation of the threshold voltage can be further suppressed.

[0066] For example, the second thickness t2 is 5 nm or less. For example, the ratio of the second thickness t2 to the first thickness t1 is 0.5 or less. For example, the first thickness t1 exceeds 5 nm and is 150 nm or less.

[0067] Figure 3 (a) and Figure 3 (b) is a graph illustrating the characteristics of a semiconductor device.

[0068] Figure 3 The horizontal axis of (a) represents the second thickness t2. Figure 3 The horizontal axis of (b) is the thickness ratio Rt1. The thickness ratio Rt1 is the ratio of the second thickness t2 to the first thickness t1 (i.e., t2 / t1). The vertical axis of these figures is the change in threshold voltage VC1 when voltage stress (voltage stress) is applied to the third electrode 53. In this example, as voltage stress, a voltage of +15V is applied to the third electrode 53 for 1000 seconds. The change VC1 is the difference between the threshold voltage before the voltage stress is applied and the threshold voltage after the voltage stress is applied. The measurement temperature is 150°C. In these figures, the condition where the second thickness t2 is 0 corresponds to the case where the second insulating region 42b is not provided.

[0069] like Figure 3As shown in (a), when the second thickness t2 is greater than 0, the larger the second thickness t2, the larger the variation VC1. The second thickness t2 is preferably 5 nm or less, for example. The second thickness t2 can also be 3.5 nm or less, for example. The variation VC1 can be small.

[0070] like Figure 3 As shown in (b), as the thickness ratio Rt1 increases, the variation VC1 increases. The thickness ratio Rt1 is preferably 0.5 or less, for example. The thickness ratio Rt1 may also be 0.3 or less, for example. The variation VC1 can be small.

[0071] Figure 4 is a graph illustrating the characteristics of a semiconductor device.

[0072] Figure 4 The characteristics when a negative voltage is applied to the third electrode 53 are exemplified. Figure 4 The horizontal axis is the negative voltage -Vg applied to the third electrode 53. The vertical axis is the leakage current IL between the third electrode 53 and the second electrode 52. In this measurement, the potential of the first electrode 51 is the same as the potential of the second electrode 52. Figure 4 , the characteristics when the second thickness t2 is changed are exemplified. The condition where the second thickness t2 is 0 corresponds to the case where the second insulating region 42b is not provided.

[0073] like Figure 4 As shown, when the second thickness t2 is 0 nm and the second insulating region 42b is not provided, the leakage current IL increases sharply when the absolute value of the negative voltage -Vg is approximately 145 V. This sharp increase in leakage current IL corresponds to damage to the semiconductor device. In embodiments, the second thickness t2 is preferably greater than 0 nm. For example, the second thickness t2 is preferably greater than 0.5 nm. For example, the second thickness t2 may also be greater than 1 nm.

[0074] Figure 5 This is a schematic cross-sectional view illustrating the semiconductor device according to the first embodiment.

[0075] like Figure 5 As shown, the semiconductor device 112 of the embodiment includes a first conductive member 61 and a third insulating member 43 in addition to the first electrode 51, the second electrode 52, the third electrode 53, the first semiconductor region 10, the second semiconductor region 20, the first insulating member 41, and the second insulating member 42. The remaining structure of the semiconductor device 112 may be the same as that of the semiconductor device 111.

[0076] In the semiconductor device 112 , at least a portion of the first insulating region 42 a is between the first semiconductor portion 21 and the first conductive member 61 .

[0077] The first conductive member 61 is electrically connected to any of the second electrode 52 and the third electrode 53. Alternatively, it can be electrically connected to any of the second electrode 52 and the third electrode 53. For example, the first conductive member 61 is electrically connected to any of the second electrode 52 and the third electrode 53 through a connection member 61C. In Figure 5 In the example, the first conductive member 61 is electrically connected to the second electrode 52 through the connection member 61C. The connection member 61C can be provided at a position different from the cross section of Figure 5 For example, a terminal 61T electrically connected to the first conductive member 61 can be provided. For example, a terminal 52T electrically connected to the second electrode 52 can be provided. These terminals can be electrically connected through the connection member 61C.

[0078] For example, the first conductive member 61 can function as a field plate. For example, concentration of an electric field can be suppressed. For example, high withstand voltage can be obtained. For example, current collapse can be suppressed.

[0079] For example, a capacitance is formed between the first conductive member 61 and the carrier region. Since the first insulating region 42a is thick, the distance between the first conductive member 61 and the carrier region becomes long. Since the first insulating region 42a is thick, the capacitance can be reduced. Parasitic capacitance can be reduced. For example, good switching characteristics are easily obtained. For example, switching loss can be reduced.

[0080] Figure 6 is a schematic cross-sectional view illustrating the semiconductor device of the first embodiment.

[0081] As Figure 6 indicated, the semiconductor device 113 of the embodiment also includes the first electrode 51, the second electrode 52, the third electrode 53, the first semiconductor region 10, the second semiconductor region 20, the first insulating member 41, and the second insulating member 42. In the semiconductor device 113, the second insulating member 42 includes a fifth insulating region 42e and a sixth insulating region 42f. The structures other than this in the semiconductor device 113 can be the same as those in the semiconductor device 111 (or the semiconductor device 110).

[0082] The first insulating region 42a is between the first semiconductor portion 21 and the fifth insulating region 42e. The fifth insulating region 42e has at least any of a fifth nitrogen concentration higher than the first nitrogen concentration, a fifth hydrogen concentration lower than the first hydrogen concentration, and a fifth density higher than the first density. The material of the fifth insulating region 42e can be the same as that of the second insulating region 42b, for example. The fifth insulating region 42e can be continuous with the second insulating region 42b.

[0083] The fourth insulating region 42d is between the second semiconductor portion 22 and a sixth insulating region 42f. The sixth insulating region 42f has at least any one of a sixth nitrogen concentration lower than the third nitrogen concentration, a sixth hydrogen concentration higher than the third hydrogen concentration, and a sixth density lower than the third density. The material of the sixth insulating region 42f can be the same as that of the third insulating region 42c, for example. The sixth insulating region 42f can be continuous with the third insulating region 42c.

[0084] A high withstand voltage can be obtained in the semiconductor devices 111 to 113. A stable threshold voltage can be obtained. Current collapse can be suppressed. Characteristics can be improved.

[0085] Figure 7 is a schematic cross-sectional view illustrating a semiconductor device of the first embodiment.

[0086] As Figure 7 indicated, the semiconductor device 114 of the embodiment also includes the first electrode 51, the second electrode 52, the third electrode 53, the first semiconductor region 10, the second semiconductor region 20, the first insulating member 41, and the second insulating member 42. In the semiconductor device 114, the shape of the third electrode 53 is different from that of the third electrode 53 in the semiconductor device 112. The structure of the semiconductor device 114 except for this can be the same as that of the semiconductor device 113.

[0087] As Figure 7 indicated, the third electrode 53 includes a second electrode portion 53b. A part of the first semiconductor portion 21 is between a fourth partial region 14 and the second electrode portion 53b. At least a part of the first insulating region 42a is between one part of the first semiconductor portion 21 and the second electrode portion 53b. At least a part of the second insulating region 42b is between another part of the first semiconductor portion 21 and the second electrode portion 53b.

[0088] In the semiconductor device 114, the first insulating region 42a overlaps with the second electrode portion 53b in the Z-axis direction. For example, a gate-drain capacitance can be reduced. For example, the second electrode portion 53b can function as a gate field plate. For example, a high withstand voltage can be easily obtained.

[0089] Figure 8 is a schematic cross-sectional view illustrating a semiconductor device of the first embodiment.

[0090] As Figure 8 indicated, a first conductive member 61 is provided in the semiconductor device 115 of the embodiment. The structure of the semiconductor device 115 except for this can be the same as that of the semiconductor device 113 (or the semiconductor device 114). For example, concentration of an electric field can be suppressed. For example, a high withstand voltage can be obtained.

[0091] Figure 9 is a schematic cross-sectional view illustrating a semiconductor device of Embodiment 1.

[0092] As Figure 9 illustrated, the semiconductor device 116 of the embodiment also includes the first electrode 51, the second electrode 52, the third electrode 53, the first semiconductor region 10, the second semiconductor region 20, the first insulating member 41, and the second insulating member 42. In the semiconductor device 116, the structure of the second insulating member 42 is different from that of the second insulating member 42 in the semiconductor device 113. The structures other than this in the semiconductor device 116 can be the same as those in the semiconductor device 113.

[0093] As Figure 9 illustrated, the second insulating member 42 includes a seventh insulating region 42g. At least a part of the seventh insulating region 42g is between the first insulating region 42a and the second insulating region 42b in the first direction (X-axis direction).

[0094] The seventh insulating region 42g has at least any one of a seventh nitrogen concentration between the first nitrogen concentration and the second nitrogen concentration, a seventh hydrogen concentration between the first hydrogen concentration and the second hydrogen concentration, and a seventh density between the first density and the second density.

[0095] As Figure 9 illustrated, the second insulating member 42 can also include an eighth insulating region 42h. At least a part of the eighth insulating region 42h is between the third insulating region 42c and the fourth insulating region 42d in the first direction (X-axis direction).

[0096] The eighth insulating region 42h has at least any one of an eighth nitrogen concentration between the third nitrogen concentration and the fourth nitrogen concentration, an eighth hydrogen concentration between the third hydrogen concentration and the fourth hydrogen concentration, and an eighth density between the third density and the fourth density.

[0097] Thus, the second insulating member 42 can also include an intermediate region (the seventh insulating region 42g and the eighth insulating region 42h). The number of the intermediate regions is arbitrary. For example, the boundaries between the plurality of insulating regions in the second insulating member 42 can be explicit or can be implicit.

[0098] In the semiconductor devices 114 to 116, a high withstand voltage can also be obtained. A stable threshold voltage can be obtained. Current collapse can be suppressed. Characteristics can be improved.

[0099] In the case where the second thickness t2 is thinner than the first thickness t1, as in the semiconductor device 111 or the semiconductor device 112, the properties (composition ratio or density, etc.) of the second insulating region 42b can also be substantially the same as the properties (composition ratio or density, etc.) of the first insulating region 42a. By virtue of the difference in thickness, a stable threshold voltage is easily obtained.

[0100] (Second Embodiment)

[0101] The second embodiment relates to a method for manufacturing a semiconductor device.

[0102] Figure 10 (a) to Figure 10 (d), and Figure 11 (a) to Figure 11 (d) are schematic cross-sectional views illustrating a method for manufacturing a semiconductor device according to the second embodiment.

[0103] As Figure 10 (a) shows, a semiconductor member 10M is prepared. The semiconductor member 10M includes: a first semiconductor region 10 including Al x1 Ga 1-x1 N (0 ≤ x1 < 1); and a second semiconductor region 20 including Al x2 Ga 1-x2 N (x1 < x2 ≤ 1) provided on the first semiconductor region 10.

[0104] As Figure 10 (a) shows, a first insulating film F1 is formed on the second semiconductor region 20. The first insulating film F1 includes at least either one of silicon and aluminum and oxygen.

[0105] As Figure 10 (b) shows, a mask material M1 is formed on the first insulating film F1. A portion of the first insulating film F1 is removed using the mask material M1 as a mask. The removal is performed, for example, by performing wet etching.

[0106] Thus, on a portion of the second semiconductor region 20 of the semiconductor member 10M, the first insulating film F1 including silicon and nitrogen is formed.

[0107] As Figure 10 (c) shows, on the other portion of the second semiconductor region 20, a second insulating film F2 including silicon and nitrogen is formed. The second insulating film F2 including silicon and nitrogen can also be formed on the other portion of the second semiconductor region 20 and the first insulating film F1.

[0108] As Figure 10(d) shown, a portion of the second insulating film F2 is removed, and a hole 10H is formed in the semiconductor member 10M exposed by the removal of the portion of the second insulating film F2. The hole 10H reaches the first semiconductor region 10.

[0109] As shown in (a), in the hole 10H, a first insulating member 41 including at least any one of silicon and aluminum and oxygen is formed. As needed, a film to be the nitride member 30 can also be formed before the formation of the first insulating member 41. Figure 11

[0110] As shown in (b), a third electrode 53 is formed in the remaining space of the hole 10H. Figure 11

[0111] As shown in (c), a portion of the first insulating film F1 and the second insulating film F2 is removed. Figure 11

[0112] As shown in (d), a first electrode 51 and a second electrode 52 are formed. Between the first electrode 51 and the third electrode 53 and between the second electrode 52 and the third electrode 53, there are the first insulating film F1 and the second insulating film F2. Figure 11

[0113] The second insulating film F2 has at least any one of a second nitrogen concentration higher than the first nitrogen concentration in the first insulating film F1, a second hydrogen concentration lower than the first hydrogen concentration in the first insulating film F1, and a second density higher than the first density in the first insulating film F1. For example, by the first insulating film F1, a first insulating region 42a and a fourth insulating region 42d can be obtained. For example, by the second insulating film F2, a second insulating region 42b and a third insulating region 42c can be obtained.

[0114] According to the manufacturing method of the embodiment, a semiconductor device in which characteristics can be improved can be obtained.

[0115] The first electrode 51 includes, for example, at least one selected from the group consisting of aluminum, titanium, nickel, and gold. The second electrode 52 includes, for example, at least one selected from the group consisting of aluminum, titanium, nickel, and gold. The third electrode 53 includes, for example, at least one selected from the group consisting of TiN, WN, Ni, Au, PT, and Ti. The first conductive member 61 includes, for example, a metal. The metal included in the first conductive member 61 includes, for example, at least one selected from the group consisting of aluminum, copper, and gold. The third electrode 53 and the first conductive member 61 can also include, for example, silicon or polysilicon having conductivity, or the like.

[0116] The embodiment can include the following technical solutions.

[0117] (Structure 1) ​​​​

[0118] A semiconductor device includes:

[0119] a first electrode;

[0120] a second electrode, a direction from the first electrode to the second electrode being along a first direction;

[0121] a third electrode including a first electrode portion, a position of the first electrode portion in the first direction being between a position of the first electrode in the first direction and a position of the second electrode in the first direction;

[0122] a first semiconductor region including Al x1 Ga 1-x1 N (0 ≤ x1 < 1), the first semiconductor region including a first partial region, a second partial region, a third partial region, a fourth partial region, and a fifth partial region, a direction from the first partial region to the first electrode being along a second direction intersecting the first direction, a direction from the second partial region to the second electrode being along the second direction, a direction from the third partial region to the first electrode portion being along the second direction, the fourth partial region being between the first partial region and the third partial region in the first direction, the fifth partial region being between the third partial region and the second partial region in the first direction;

[0123] a second semiconductor region including Al x2 Ga 1-x2 N (x1 < x2 ≤ 1), the second semiconductor region including a first semiconductor portion and a second semiconductor portion, a direction from the fourth partial region to the first semiconductor portion being along the second direction, a direction from the fifth partial region to the second semiconductor portion being along the second direction;

[0124] a first insulating member including at least either one of silicon and aluminum and oxygen, the first insulating member including a first insulating portion, the first insulating portion being between the third partial region and the first electrode portion; and

[0125] The second insulating member includes silicon and nitrogen, and includes a first insulating region and a second insulating region, a position of the first insulating region in the first direction is between the position of the first electrode in the first direction and the position of the first electrode portion in the first direction, a position of the second insulating region in the first direction is between the position of the first insulating region in the first direction and the position of the first electrode portion in the first direction, the first semiconductor portion is between the fourth partial region and the first insulating region and between the fourth partial region and the second insulating region, and the second insulating region has at least any one of a second nitrogen concentration higher than a first nitrogen concentration in the first insulating region, a second hydrogen concentration lower than a first hydrogen concentration in the first insulating region, and a second density higher than a first density in the first insulating region.

[0126] (structure 2)

[0127] The semiconductor device according to structure 1, wherein

[0128] The second insulating member includes a third insulating region and a fourth insulating region,

[0129] A position of the third insulating region in the first direction is between the position of the first electrode portion in the first direction and the position of the second electrode in the first direction,

[0130] A position of the fourth insulating region in the first direction is between the position of the third insulating region in the first direction and the position of the second electrode in the first direction,

[0131] The second semiconductor portion is between the fifth partial region and the third insulating region and between the fifth partial region and the fourth insulating region,

[0132] The third insulating region has at least any one of a third nitrogen concentration higher than a fourth nitrogen concentration in the fourth insulating region, a third hydrogen concentration lower than a fourth hydrogen concentration in the fourth insulating region, and a third density higher than a fourth density in the fourth insulating region.

[0133] (structure 3)

[0134] The semiconductor device according to structure 2, wherein a ratio of a concentration of silicon to a concentration of nitrogen in the third insulating region is lower than 0.75.

[0135] (structure 4)

[0136] The semiconductor device according to any one of Structures 2 to 3, wherein a ratio of a concentration of silicon to a concentration of nitrogen in the fourth insulating region is higher than 0.75.

[0137] (Structure 5)

[0138] The semiconductor device according to any one of Structures 2 to 4, wherein a third thickness of the third insulating region in the second direction is thinner than a fourth thickness of the fourth insulating region in the second direction.

[0139] (Structure 6)

[0140] The semiconductor device according to any one of Structures 2 to 5, wherein

[0141] the third electrode further includes a third electrode portion,

[0142] a part of the second semiconductor portion is between the fifth partial region and the third electrode portion,

[0143] at least a part of the third insulating region is between the part of the second semiconductor portion and the third electrode portion.

[0144] (Structure 7)

[0145] The semiconductor device according to any one of Structures 2 to 6, wherein

[0146] the second insulating member further includes a sixth insulating region,

[0147] the fourth insulating region is between the second semiconductor portion and the sixth insulating region,

[0148] the sixth insulating region has at least any one of a sixth nitrogen concentration lower than the third nitrogen concentration, a sixth hydrogen concentration higher than the third hydrogen concentration, and a sixth density lower than the third density.

[0149] (Structure 8)

[0150] The semiconductor device according to any one of Structures 1 to 7, wherein a ratio of a concentration of silicon to a concentration of nitrogen in the second insulating region is lower than 0.75.

[0151] (Structure 9)

[0152] The semiconductor device according to any one of Structures 1 to 8, wherein a ratio of a concentration of silicon to a concentration of nitrogen in the first insulating region is higher than 0.75.

[0153] (Structure 10)

[0154] The semiconductor device according to any one of Structures 1 to 9, wherein a second thickness of the second insulating region in the second direction is thinner than a first thickness of the first insulating region in the second direction.

[0155] (Structure 11)

[0156] The semiconductor device according to Structure 10, wherein a ratio of the second thickness to the first thickness is 0.5 or less.

[0157] (Structure 12)

[0158] The semiconductor device according to Structure 10 or 11, further comprising:

[0159] a first conductive member; and

[0160] a third insulating member,

[0161] at least a portion of the first insulating region is between the first semiconductor portion and the first conductive member,

[0162] at least a portion of the third insulating member is between the at least a portion of the first insulating member and the first conductive member,

[0163] the first conductive member is electrically connected to or capable of being electrically connected to any of the second electrode and the third electrode.

[0164] (Structure 13)

[0165] The semiconductor device according to any one of Structures 1 to 12, wherein

[0166] the second insulating member further includes a fifth insulating region,

[0167] the first insulating region is between the first semiconductor portion and the fifth insulating region,

[0168] the fifth insulating region has at least any one of a fifth nitrogen concentration higher than the first nitrogen concentration, a fifth hydrogen concentration lower than the first hydrogen concentration, and a fifth density higher than the first density.

[0169] (Structure 14)

[0170] The semiconductor device according to any one of Structures 1 to 13, wherein

[0171] the third electrode further includes a second electrode portion,

[0172] a portion of the first semiconductor portion is between the fourth partial region and the second electrode portion,

[0173] At least a part of the first insulating region is between the part of the first semiconductor portion and the second electrode portion.

[0174] (Structure 15)

[0175] The semiconductor device according to Structure 14, in which

[0176] At least a part of the first insulating region is between the part of the first semiconductor portion and the second electrode portion.

[0177] (Structure 16)

[0178] The semiconductor device according to any one of Structures 1 to 15, in which

[0179] The second insulating member further includes a seventh insulating region,

[0180] At least a part of the seventh insulating region is between the first insulating region and the second insulating region in the first direction.

[0181] The seventh insulating region has at least any one of a seventh nitrogen concentration between the first nitrogen concentration and the second nitrogen concentration, a seventh hydrogen concentration between the first hydrogen concentration and the second hydrogen concentration, and a seventh density between the first density and the second density.

[0182] (Structure 17)

[0183] The semiconductor device according to any one of Structures 1 to 16, further comprising:

[0184] a nitride member including Al x3 Ga 1-x3 N (x2 < x3 ≤ 1);

[0185] At least a part of the nitride member is between the third partial region and the first insulating portion.

[0186] (Structure 18)

[0187] The semiconductor device according to any one of Structures 1 to 17, in which

[0188] At least a part of the first electrode portion is between the first semiconductor portion and the second semiconductor portion in the first direction.

[0189] (Structure 19)

[0190] A semiconductor device comprising:

[0191] a first electrode;

[0192] a second electrode, a direction from the first electrode to the second electrode is along a first direction;

[0193] a third electrode including a first electrode portion, a position of the first electrode portion in the first direction is between a position of the first electrode in the first direction and a position of the second electrode in the first direction;

[0194] including Al x1 Ga 1-x1 a first semiconductor region including Alx1N (0 ≤ x1 < 1), the first semiconductor region including a first partial region, a second partial region, a third partial region, a fourth partial region, and a fifth partial region, a direction from the first partial region to the first electrode is along a second direction intersecting the first direction, a direction from the second partial region to the second electrode is along the second direction, a direction from the third partial region to the first electrode portion is along the second direction, the fourth partial region is between the first partial region and the third partial region in the first direction, the fifth partial region is between the third partial region and the second partial region in the first direction;

[0195] including Al x2 Ga 1-x2 a second semiconductor region including Alx2N (x1 < x2 ≤ 1), the second semiconductor region including a first semiconductor portion and a second semiconductor portion, a direction from the fourth partial region to the first semiconductor portion is along the second direction, a direction from the fifth partial region to the second semiconductor portion is along the second direction;

[0196] a first insulating member including at least one of silicon and aluminum and oxygen, the first insulating member including a first insulating portion, the first insulating portion being between the third partial region and the first electrode portion; and

[0197] a second insulating member including silicon and nitrogen, the second insulating member including a first insulating region and a second insulating region, a position of the first insulating region in the first direction is between the position of the first electrode in the first direction and the position of the first electrode portion in the first direction, a position of the second insulating region in the first direction is between the position of the first insulating region in the first direction and the position of the first electrode portion in the first direction, the first semiconductor portion is between the fourth partial region and the first insulating region and between the fourth partial region and the second insulating region, a second thickness of the second insulating region in the second direction is thinner than a first thickness of the first insulating region in the second direction.

[0198] (structure 20)

[0199] A method for manufacturing a semiconductor device, wherein

[0200] A first insulating film containing silicon and nitrogen is formed over a part of a second semiconductor region of a semiconductor member including a first semiconductor region containing Al and a second semiconductor region provided over the first semiconductor region x1 Ga 1-x1 N (0 < x1 < 1), the second semiconductor region containing Al x2 Ga 1-x2 N (x1 < x2 < 1),

[0201] A second insulating film containing silicon and nitrogen is formed over another part of the second semiconductor region,

[0202] A part of the second insulating film is removed, and a hole is formed in the semiconductor member exposed by the removal of the part of the second insulating film,

[0203] A first insulating member containing silicon and oxygen is formed in the hole,

[0204] A third electrode is formed in the remaining space of the hole,

[0205] A first electrode and a second electrode are formed with the first insulating film and the second insulating film between the first electrode and the third electrode and between the second electrode and the third electrode,

[0206] The second insulating film has at least any one of a second nitrogen concentration higher than a first nitrogen concentration in the first insulating film, a second hydrogen concentration lower than a first hydrogen concentration in the first insulating film, and a second density higher than a first density in the first insulating film.

[0207] According to the embodiment, a semiconductor device and a method for manufacturing the same which can improve characteristics can be provided.

[0208] The above, while referring to specific examples, describes embodiments of the present application. However, the present application is not limited to these specific examples. For example, as to the specific structure of each element such as a semiconductor member, a semiconductor region, a conductive member, an electrode, and an insulating member included in a semiconductor device, as long as a person skilled in the art can similarly implement the present application and obtain the same effects by appropriately selecting from the known range, it is included in the scope of the present application.

[0209] Further, a structure obtained by combining any two or more elements in each specific example in a technically possible range is also included in the scope of the present application as long as it includes the gist of the present application.

[0210] Further, all the semiconductor devices which can be implemented by appropriately making design changes by those skilled in the art based on the semiconductor device described as an embodiment of the present application are also within the scope of the present application as long as they include the gist of the present application.

[0211] Further, it should be understood that various changes and modifications can be made within the scope of the idea of the present application, which would be conceivable to those skilled in the art if it is the present application, and those changes and modifications are also within the scope of the present application.

[0212] While several embodiments of the present application have been described, these embodiments have been presented by way of example only, and are not intended to limit the scope of the application. The novel embodiments can be implemented in other various forms, and various omissions, substitutions and changes can be made without departing from the scope of the application. These embodiments or modifications thereof encompassed in the scope or spirit of the application, and are included in the scope of the application as recited in the claims and its equivalents.

Claims

1. A semiconductor device comprising: 1st electrode; a second electrode, wherein a direction from the first electrode to the second electrode is along a first direction; a third electrode including a first electrode portion, wherein a position of the first electrode portion in the first direction is between a position of the first electrode in the first direction and a position of the second electrode in the first direction; Contains Al x1 Ga 1-x1 N's first semiconductor region, the first semiconductor region includes a first partial region, a second partial region, a third partial region, a fourth partial region, and a fifth partial region, the direction from the first partial region to the first electrode is along a second direction intersecting the first direction, the direction from the second partial region to the second electrode is along the second direction, the direction from the third partial region to the first electrode portion is along the second direction, the fourth partial region is between the first partial region and the third partial region in the first direction, and the fifth partial region is between the third partial region and the second partial region in the first direction, wherein, 0≤x1<1； Contains Al x2 Ga 1-x2 N second semiconductor region, the second semiconductor region includes a first semiconductor portion and a second semiconductor portion, the direction from the fourth partial region to the first semiconductor portion is along the second direction, and the direction from the fifth partial region to the second semiconductor portion is along the second direction, wherein x1 <x2≤1; a first insulating member including at least one of silicon and aluminum and oxygen, the first insulating member including a first insulating portion, the first insulating portion being located between the third partial region and the first electrode portion; and a second insulating member including silicon and nitrogen, the second insulating member including a first insulating region and a second insulating region, the first insulating region being located between the position of the first electrode and the position of the first electrode portion in the first direction, the second insulating region being located between the position of the first insulating region and the position of the first electrode portion in the first direction, the first semiconductor portion being located between the fourth partial region and the first insulating region and between the fourth partial region and the second insulating region, the second insulating region having at least any one of a second nitrogen concentration higher than the first nitrogen concentration in the first insulating region, a second hydrogen concentration lower than the first hydrogen concentration in the first insulating region, and a second density higher than the first density in the first insulating region, The second insulating member includes a third insulating region and a fourth insulating region. The position of the third insulating region in the first direction is between the position of the first electrode portion in the first direction and the position of the second electrode in the first direction. The position of the fourth insulating region in the first direction is between the position of the third insulating region in the first direction and the position of the second electrode in the first direction. The second semiconductor portion is located between the fifth partial region and the third insulating region and between the fifth partial region and the fourth insulating region. the third insulating region having at least one of a third nitrogen concentration higher than a fourth nitrogen concentration in the fourth insulating region, a third hydrogen concentration lower than a fourth hydrogen concentration in the fourth insulating region, and a third density higher than a fourth density in the fourth insulating region; The second insulating member further includes a sixth insulating region, The fourth insulating region is between the second semiconductor portion and the sixth insulating region. The sixth insulating region has at least any one of a sixth nitrogen concentration lower than the third nitrogen concentration, a sixth hydrogen concentration higher than the third hydrogen concentration, and a sixth density lower than the third density.

2. A semiconductor device comprising: 1st electrode; a second electrode, wherein a direction from the first electrode to the second electrode is along a first direction; a third electrode including a first electrode portion, wherein a position of the first electrode portion in the first direction is between a position of the first electrode in the first direction and a position of the second electrode in the first direction; Contains Al x1 Ga 1-x1 N's first semiconductor region, the first semiconductor region includes a first partial region, a second partial region, a third partial region, a fourth partial region, and a fifth partial region, the direction from the first partial region to the first electrode is along a second direction intersecting the first direction, the direction from the second partial region to the second electrode is along the second direction, the direction from the third partial region to the first electrode portion is along the second direction, the fourth partial region is between the first partial region and the third partial region in the first direction, and the fifth partial region is between the third partial region and the second partial region in the first direction, wherein, 0≤x1<1； Contains Al x2 Ga 1-x2 N second semiconductor region, the second semiconductor region includes a first semiconductor portion and a second semiconductor portion, the direction from the fourth partial region to the first semiconductor portion is along the second direction, and the direction from the fifth partial region to the second semiconductor portion is along the second direction, wherein x1 <x2≤1; a first insulating member including at least one of silicon and aluminum and oxygen, the first insulating member including a first insulating portion, the first insulating portion being located between the third partial region and the first electrode portion; and a second insulating member including silicon and nitrogen, the second insulating member including a first insulating region and a second insulating region, the first insulating region being located between the position of the first electrode and the position of the first electrode portion in the first direction, the second insulating region being located between the position of the first insulating region and the position of the first electrode portion in the first direction, the first semiconductor portion being located between the fourth partial region and the first insulating region and between the fourth partial region and the second insulating region, the second insulating region having at least any one of a second nitrogen concentration higher than the first nitrogen concentration in the first insulating region, a second hydrogen concentration lower than the first hydrogen concentration in the first insulating region, and a second density higher than the first density in the first insulating region, The third electrode further includes a second electrode portion, A portion of the first semiconductor portion is between the fourth portion region and the second electrode portion. At least a portion of the second insulating region is between the portion of the first semiconductor portion and the second electrode portion. At least a portion of the first insulating region is between the portion of the first semiconductor portion and the second electrode portion.

3. The semiconductor device according to claim 2, wherein The second insulating member includes a third insulating region and a fourth insulating region. The position of the third insulating region in the first direction is between the position of the first electrode portion in the first direction and the position of the second electrode in the first direction. The position of the fourth insulating region in the first direction is between the position of the third insulating region in the first direction and the position of the second electrode in the first direction. The second semiconductor portion is located between the fifth partial region and the third insulating region and between the fifth partial region and the fourth insulating region. The third insulating region has at least any one of a third nitrogen concentration higher than the fourth nitrogen concentration in the fourth insulating region, a third hydrogen concentration lower than the fourth hydrogen concentration in the fourth insulating region, and a third density higher than the fourth density in the fourth insulating region.

4. The semiconductor device according to claim 3, wherein A ratio of a silicon concentration to a nitrogen concentration in the third insulating region is lower than 0.

75.

5. The semiconductor device according to claim 3, wherein A ratio of silicon concentration to nitrogen concentration in the fourth insulating region is higher than 0.

75. The semiconductor device according to claim 1 , wherein: A second thickness of the second insulating region along the second direction is thinner than a first thickness of the first insulating region along the second direction.

7. The semiconductor device according to claim 6, further comprising: a first conductive member; and The third insulating member, At least a portion of the first insulating region is located between the first semiconductor portion and the first conductive member. At least a portion of the third insulating member is located between the at least a portion of the first insulating member and the first conductive member. The first conductive member is electrically connected to any one of the second electrode and the third electrode, or can be electrically connected to any one of the second electrode and the third electrode.

8. The semiconductor device according to claim 1 or 2, further comprising: Contains Al x3 Ga 1-x3 N nitride member, wherein x2 <x3≤1, At least a portion of the nitride member is located between the third partial region and the first insulating portion.

9. A semiconductor device comprising: 1st electrode; a second electrode, wherein a direction from the first electrode to the second electrode is along a first direction; a third electrode including a first electrode portion, wherein a position of the first electrode portion in the first direction is between a position of the first electrode in the first direction and a position of the second electrode in the first direction; Contains Al x1 Ga 1-x1 N's first semiconductor region, the first semiconductor region includes a first partial region, a second partial region, a third partial region, a fourth partial region, and a fifth partial region, the direction from the first partial region to the first electrode is along a second direction intersecting the first direction, the direction from the second partial region to the second electrode is along the second direction, the direction from the third partial region to the first electrode portion is along the second direction, the fourth partial region is between the first partial region and the third partial region in the first direction, and the fifth partial region is between the third partial region and the second partial region in the first direction, wherein, 0≤x1<1； Contains Al x2 Ga 1-x2 N second semiconductor region, the second semiconductor region includes a first semiconductor portion and a second semiconductor portion, the direction from the fourth partial region to the first semiconductor portion is along the second direction, and the direction from the fifth partial region to the second semiconductor portion is along the second direction, wherein x1 <x2≤1; a first insulating member including at least one of silicon and aluminum and oxygen, the first insulating member including a first insulating portion, the first insulating portion being located between the third partial region and the first electrode portion; and a second insulating member comprising silicon and nitrogen, the second insulating member comprising a first insulating region and a second insulating region, the first insulating region being positioned in the first direction between the position of the first electrode and the position of the first electrode portion in the first direction, the second insulating region being positioned in the first direction between the position of the first insulating region and the position of the first electrode portion in the first direction, the first semiconductor portion being positioned between the fourth partial region and the first insulating region and between the fourth partial region and the second insulating region, the second thickness of the second insulating region along the second direction being thinner than the first thickness of the first insulating region along the second direction, At least a portion of the first electrode portion is between the first semiconductor portion and the second semiconductor portion in the first direction, The second thickness is less than 5 nm, The first thickness is greater than 5 nm and less than 150 nm, A ratio of the second thickness to the first thickness is 0.5 or less.

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