Light emitting diode display panel

Abstract

A light emitting diode display panel includes a light emitting diode substrate and a light penetrating structure. The light penetrating structure is located on the light emitting diode substrate. A first surface of the light penetrating structure is an outer surface of the light emitting diode display panel. The first surface of the light penetrating structure has a plurality of raised microstructures or a plurality of recessed microstructures.

Description

TECHNICAL FIELD

[0001] The present application relates to a light emitting diode display panel. BACKGROUND

[0002] A light emitting diode is a kind of electroluminescent semiconductor element, which has the advantages of high efficiency, long life, not easy to break, fast response, high reliability, etc. With a large amount of time and money investment, light emitting diode display panels have been successfully used in many display devices. However, there are still many things to be improved in the current light emitting diode display panel. For example, in the existing light emitting diode display panel, when there is no display screen, if the external light shines on the light emitting diode display panel, it is likely to be reflected by the elements in the light emitting diode display panel. At this time, if the elements or ink layer in the light emitting diode display panel are not evenly distributed, it will cause the light emitting diode display panel to present uneven black color. SUMMARY

[0003] The present application provides a light emitting diode display panel, which has the advantage of low reflectivity.

[0004] At least one embodiment of the present application provides a light emitting diode display panel, which includes a light emitting diode substrate and a light penetration structure. The light penetration structure is located on the light emitting diode substrate. The first surface of the light penetration structure is the outer surface of the light emitting diode display panel. The first surface of the light penetration structure has a plurality of convex microstructures or a plurality of concave microstructures. BRIEF DESCRIPTION OF DRAWINGS

[0005] Figure 1 FIG. 1 is a cross-sectional schematic view of a light emitting diode display panel according to an embodiment of the present application.

[0006] Figure 2 FIG. 2 is a cross-sectional schematic view of a light emitting diode display panel according to an embodiment of the present application.

[0007] Figure 3 FIG. 3 is a line graph of simulation data of the average reflectivity of a light emitting diode display panel as a whole and the incident angle of incident light according to an embodiment of the present application.

[0008] Figure 4 FIG. 4 is a line graph of simulation data of the average reflectivity of a light emitting diode display panel as a whole and the proportion of the occupied area of convex microstructures or concave microstructures according to an embodiment of the present application.

[0009] Figure 5 FIG. 5 is a line graph of simulation data of the average reflectivity of a light emitting diode display panel as a whole and the proportion of the occupied area of convex microstructures or concave microstructures according to an embodiment of the present application.

[0010] Figure 6 is a line graph of simulation data of average reflectivity of a light emitting diode display panel as a whole and a ratio of a depth of a recessed microstructure to half of a maximum width according to an embodiment of the present invention.

[0011] Figure 7 is a perspective view of a recessed microstructure according to an embodiment of the present invention.

[0012] Figure 8 is a perspective view of a recessed microstructure according to an embodiment of the present invention.

[0013] Figure 9A is a perspective view of a recessed microstructure according to an embodiment of the present invention.

[0014] Figure 9B is a top view of a recessed microstructure of Figure 9A

[0015] Figure 9C is a side view of a recessed microstructure of Figure 9A

[0016] Figure 9D is a front view of a recessed microstructure of Figure 9A

[0017] Figure 10A is a perspective view of a recessed microstructure according to an embodiment of the present invention.

[0018] Figure 10B is a cross-sectional view of a recessed microstructure of Figure 10A

[0019] Figure 11 is a perspective view of a recessed microstructure according to an embodiment of the present invention.

[0020] Figure 12 is a perspective view of a recessed microstructure according to an embodiment of the present invention.

[0021] Figure 13 is a bar graph of average reflectivity of light emitting diode display panels according to embodiments of the present invention having different recessed microstructures.

[0022] Figure 14 is a cross-sectional view of a light emitting diode display panel according to an embodiment of the present invention.

[0023] Figure 15 is a cross-sectional view of a light emitting diode display panel according to an embodiment of the present invention.

[0024] Figure 16 ​​​​FIG. 1 is a cross-sectional schematic view of a light emitting diode substrate according to an embodiment of the present application.

[0025] Figure 17 FIG. 2 is a cross-sectional schematic view of a light emitting diode substrate according to an embodiment of the present application.

[0026] Figure 18 FIG. 3 is a line graph of simulation data of an average reflectance of a light emitting diode display panel as a whole and a reflectance of a light emitting diode substrate according to an embodiment of the present application.

[0027] Figure 19 FIG. 4 is a cross-sectional schematic view of a light emitting diode display panel according to an embodiment of the present application.

[0028] BRIEF DESCRIPTION OF DRAWINGS

[0029] 10a, 10b, 10c, 10d, 10e: light emitting diode display panel

[0030] 100, 100a, 100b: light emitting diode substrate

[0031] 110: substrate

[0032] 120: light emitting diode package structure

[0033] 121, P: electrode

[0034] 122, 124, 126: light emitting diode

[0035] 127: encapsulation material

[0036] 128: interposer substrate

[0037] 130a, 130b: light absorbing layer

[0038] 200a, 200b: light transmitting structure

[0039] 202a, 202b: first surface

[0040] 210a, 210b: main body portion

[0041] 212b: groove

[0042] 220a: granular structure

[0043] 230a, 230b: coating layer

[0044] 300a, 300b: light absorbing structure

[0045] 310a: light absorbing layer

[0046] 310b: linear polarizer

[0047] 320b: quarter-wave plate

[0048] D1: thickness

[0049] D2, d: depth

[0050] PM: protruding microstructure

[0051] R, R1, R2: half of maximum width

[0052] RM, RM1, RM2, RM3, RM4, RM5, RM6: recessed microstructure

[0053] r1, r2: radius

[0054] SL: substrate layer

[0055] SW1: first side

[0056] SW2: second side

[0057] SW3: third side

[0058] SW4: fourth side

[0059] PR, TR: rounding

[0060] w1: first width

[0061] w2: second width

[0062] θ1, θ2: included angle DETAILED DESCRIPTION

[0063] Figure 1 is a cross-sectional schematic view of a light-emitting diode display panel according to an embodiment of the present application.

[0064] Reference is made to Figure 1 , the light-emitting diode display panel 10a includes a light-emitting diode substrate 100 and a light-transmitting structure 200a. In Figure 1 , the specific structure in the light-emitting diode substrate 100 is omitted. The structure of the light-emitting diode substrate 100 can be referred to the embodiments of Figure 16 or Figure 17 and will not be described in detail here.

[0065] The light penetration structure 200a is located on top of the light emitting diode substrate 100. The first surface 202a of the light penetration structure 200a is an outer surface of the light emitting diode display panel 10a. For example, the first surface 202a of the light penetration structure 200a is a surface of the light emitting diode display panel 10a facing a user, and the first surface 202a of the light penetration structure 200a contacts air. The light penetration structure 200a includes a bulk portion 210a and a plurality of particle structures 220a. The particle structures 220a are inlaid on a surface of the bulk portion 210a, such that the first surface 202a of the light penetration structure 200a has a plurality of protruding microstructures PM. In some embodiments, the shape of the protruding microstructures PM includes a hemisphere, a semi-ellipsoid, a cube, a cuboid, a hexagonal column, a roof, a cone, a ring, or other geometric shapes.

[0066] In some embodiments, the light penetration structure 200a selectively includes a coating layer 230a. The coating layer 230a is conformal to the bulk portion 210a and the particle structures 220a to form the protruding microstructures PM on the first surface 202a of the light penetration structure 200a. The coating layer 230a is, for example, a low reflectance (LR) layer. In this embodiment, the coating layer 230a of the light penetration structure 200a contacts air, but the present disclosure is not limited thereto. In other embodiments, the light penetration structure 200a does not include the coating layer 230a, and the bulk portion 210a and the particle structures 220a contact air.

[0067] In some embodiments, the material of the bulk portion 210a includes an organic material or an inorganic material, such as poly(methyl methacrylate) (PMMA), polyethyleneterephthalate (PET), Cellulose Triacetate (TAC), Cycloolefin polymer (COP), or the like. In some embodiments, the refractive index of the bulk portion 210a is less than 1.4, such as 1.3 to 1.4. In some embodiments, the particle structures 220a include the same or different material as the bulk portion 210a. In some embodiments, the refractive index of the particle structures 220a is less than 1.4, such as 1.3 to 1.4. In some embodiments, the refractive index of the coating layer 230a is 1.3 to 1.4.

[0068] In some embodiments, the thickness D1 of the protruding microstructure PM is 0.5 micrometers to 10 micrometers. In some embodiments, the thickness D1 of the protruding microstructure PM is defined by the height difference between the position of the topmost end of the particle structure 220a and the top surface of the portion of the main body 210a where the particle structure 220a is not embedded. In other embodiments, when the light penetration structure 200a does not include the coating layer 230a, the thickness D1 of the protruding microstructure PM is defined by the height difference between the position of the topmost end of the particle structure 220a and the top surface of the portion of the main body 210a where the particle structure 220a is not embedded. In some embodiments, the half of the maximum width R1 of the protruding microstructure PM is 0.5 micrometers to 10 micrometers. In some embodiments, the thickness of the coating layer 230a is 5 micrometers to 6 micrometers. In some embodiments, the half of the maximum width R1 of the protruding microstructure PM is approximately equal to the radius of the particle structure 220a plus the thickness of the coating layer 230a.

[0069] In some embodiments, the main body 210a is formed on a substrate layer SL. In some embodiments, the substrate layer SL includes a material different from the main body 210a, and the refractive index of the main body 210a is less than the refractive index of the substrate layer SL. In some embodiments, the refractive index of the substrate layer SL is greater than or equal to 1.4, for example, 1.5 or 1.53.

[0070] In the present embodiment, the substrate layer SL is not a film layer in the light-emitting diode substrate 100, but the present application is not limited thereto. In other embodiments, the substrate layer SL is an encapsulation material and / or a light-absorbing layer in the light-emitting diode substrate 100. In other words, the main body 210a can be directly formed on the light-emitting diode substrate 100.

[0071] Based on the above, the first surface 202a of the light penetration structure 200a has the protruding microstructure PM, and the first surface 202a of the light penetration structure 200a is the outer surface of the light-emitting diode display panel 10a, so that the problem of excessively high reflectivity of the light-emitting diode display panel 10a can be improved by the light penetration structure 200a. In addition, in some embodiments, the light from the outside that is reflected by the reflective elements in the light-emitting diode substrate 100 can be avoided without the need to set a light-absorbing structure (such as a polarizer or a light-absorbing layer) between the light penetration structure 200a and the light-emitting diode substrate 100, so that the light emitted by the light-emitting diode substrate 100 can be prevented from being absorbed by the aforementioned light-absorbing structure, thereby improving the brightness of the light-emitting diode display panel 10a.

[0072] Figure 2 is a cross-sectional view of a light-emitting diode display panel according to an embodiment of the present application. It must be noted that, Figure 2 the embodiments of Figure 1The element numbers and some contents of the embodiments are partially the same as those of the foregoing embodiments, in which the same or similar element numbers are used to represent the same or similar elements, and the description of the same technical contents is omitted. The description of the omitted parts can refer to the foregoing embodiments, which will not be described herein.

[0073] Figure 2 The light-emitting diode display panel 10b of the present embodiment differs from the light-emitting diode display panel 10a of the foregoing embodiment mainly in that: Figure 1 The light-emitting diode display panel 10b of the present embodiment differs from the light-emitting diode display panel 10a of the foregoing embodiment mainly in that: Figure 2 The first surface 202b of the light-transmitting structure 200b of the light-emitting diode display panel 10b has a plurality of recessed microstructures RM.

[0074] Please refer to Figure 2 The light-transmitting structure 200b is located on the light-emitting diode substrate 100. The first surface 202b of the light-transmitting structure 200b is the outer surface of the light-emitting diode display panel 10b. For example, the first surface 202b of the light-transmitting structure 200b is the surface of the light-emitting diode display panel 10b facing the user, and the first surface 202b of the light-transmitting structure 200b contacts the air. The surface of the main body 210b of the light-transmitting structure 200b includes a plurality of grooves 212b, so that the first surface 202b of the light-transmitting structure 200b has a plurality of recessed microstructures RM. In some embodiments, the shape of the recessed microstructure RM includes a hemisphere, a semi-ellipsoid, a cube, a cuboid, a hexagonal column, a roof, a cone, a ring, or other geometric shapes.

[0075] In some embodiments, the light-transmitting structure 200b selectively includes a coating layer 230b. The coating layer 230b is conformal to the grooves 212b of the main body 210b to constitute the recessed microstructures RM located on the first surface 202b of the light-transmitting structure 200b. The coating layer 230b is, for example, an anti-reflection layer. In the present embodiment, the coating layer 230b of the light-transmitting structure 200b contacts the air, but the present application is not limited thereto. In other embodiments, the light-transmitting structure 200b does not include the coating layer 230b, and the main body 210b contacts the air.

[0076] In some embodiments, the material of the main body 210b includes an organic material or an inorganic material, such as poly(methyl methacrylate) (PMMA), polyethyleneterephthalate (PET), Cellulose Triacetate (TAC), Cycloolefin polymer (COP), etc. In some embodiments, the refractive index of the main body 210b is less than 1.4, for example, 1.3 to 1.4. In some embodiments, the refractive index of the coating layer 230b is 1.3 to 1.4.

[0077] In some embodiments, the depth D2 of the recessed microstructure RM is 0.5 micrometers to 10 micrometers. In some embodiments, the depth D2 of the recessed microstructure RM is defined by the height difference between the position where the coating layer 230b is located at the bottom end of the groove 212b and the top surface of the portion of the coating layer 230a that is not formed in the groove 212b, but the present application is not limited thereto. In other embodiments, when the light penetration structure 200b does not include the coating layer 230b, the depth D2 of the recessed microstructure RM is defined by the height difference between the position of the bottom end of the groove 212b and the top surface of the body portion 210b. In some embodiments, the half of the maximum width R2 of the recessed microstructure RM is 0.5 micrometers to 10 micrometers. In some embodiments, the thickness of the coating layer 230b is 5 micrometers to 6 micrometers. In some embodiments, the half of the maximum width R2 of the recessed microstructure RM is approximately equal to the radius of the groove 212b minus the thickness of the coating layer 230b.

[0078] In some embodiments, the body portion 210b is formed on a substrate layer SL. In some embodiments, the substrate layer SL includes a material that is different from the body portion 210b, and the refractive index of the body portion 210b is less than the refractive index of the substrate layer SL. In some embodiments, the refractive index of the substrate layer SL is greater than or equal to 1.4, for example, 1.5 or 1.53.

[0079] In the present embodiment, the substrate layer SL is not a film layer in the light-emitting diode substrate 100, but the present application is not limited thereto. In other embodiments, the substrate layer SL is an encapsulation material and / or a light-absorbing layer in the light-emitting diode substrate 100. In other words, the body portion 210b can be directly formed on the light-emitting diode substrate 100.

[0080] Based on the above, the first surface 202b of the light penetration structure 200b has the recessed microstructure RM, and the first surface 202b of the light penetration structure 200b is the outer surface of the light-emitting diode display panel 10b, so that the problem of excessively high reflectivity of the light-emitting diode display panel 10b can be improved by the light penetration structure 200b. In addition, in the present embodiment, the light from the outside that is reflected by the reflective elements in the light-emitting diode substrate 100 does not need to pass through the light-absorbing structure (such as a polarizer or a light-absorbing layer) between the light penetration structure 200b and the light-emitting diode substrate 100, so that the light emitted by the light-emitting diode substrate 100 can be prevented from being absorbed by the aforementioned light-absorbing structure, thereby improving the brightness of the light-emitting diode display panel 10b.

[0081] Figure 3 is a line graph of simulation data of the average reflectivity of a light-emitting diode display panel as a whole and the incident angle of incident light according to an embodiment of the present application. In Figure 3In some embodiments, the reflectivity of the light-absorbing layer (e.g., black ink) in the LED substrate is less than 5%, and the overall reflectivity of the LED substrate is less than 10%.

[0082] Please refer to Figure 1 、 Figure 2 and Figure 3 , in Figure 3 , the vertical axis refers to the average reflectivity of the overall LED display panel, and in Figure 3 , the horizontal axis refers to the incident angle of the incident light.

[0083] In Figure 3 , different lines are used to represent the data of the LED display panel 10a with the convex microstructure PM and the LED display panel 10b with the concave microstructure RM. In Figure 3 , the D1 / R1 of the convex microstructure PM of the LED display panel 10a is 0.5, and the D2 / R2 of the concave microstructure RM of the LED display panel 10b is 0.5. In Figure 3 , the vertical projection of the convex microstructure PM or the concave microstructure RM on the LED substrate 100 occupies 90% of the vertical projection of the light-transmitting structure on the LED substrate 100.

[0084] From Figure 3 , it can be seen that for the incident light of large angle, the concave microstructure RM can reduce the average reflectivity of the overall LED display panel more than the convex microstructure PM. The simulation data of the average reflectivity of the overall LED display panel and the area proportion of the convex microstructure or the concave microstructure are shown in Table 1.

[0085] Table 1

[0086]

[0087] Figure 4 is a line graph of the simulation data of the average reflectivity of the overall LED display panel and the area proportion of the convex microstructure or the concave microstructure according to an embodiment of the present application. In Figure 4 , the reflectivity of the light-absorbing layer (e.g., black ink) in the LED substrate is less than 5%, and the overall reflectivity of the LED substrate is less than 10%. In Figure 4 , the refractive index of the main part (and the particle structure) of the light-transmitting structure is 1.3, and the refractive index of the substrate layer is 1.5.

[0088] Please refer to Figure 1 、 Figure 2 and Figure 4 , in Figure 4the vertical axis in FIG. 8 refers to the average reflectance of the light-emitting diode display panel as a whole, and in Figure 4 the horizontal axis in FIG. 8 refers to the proportion of the area of the vertical projection of the protruding microstructures PM or the recessed microstructures RM on the light-emitting diode substrate 100 to the area of the vertical projection of the light-transmitting structures on the light-emitting diode substrate 100.

[0089] in FIG. 8, the vertical axis refers to the average reflectance of the light-emitting diode display panel as a whole, and in Figure 4 in FIG. 8, the vertical axis refers to the average reflectance of the light-emitting diode display panel as a whole, and in

[0090] in FIG. 8, the vertical axis refers to the average reflectance of the light-emitting diode display panel as a whole, and in Figure 4 It can be seen that as the proportion of the area occupied by the protruding microstructures or the recessed microstructures increases, the average reflectance of the light-emitting diode display panel as a whole generally exhibits a decreasing trend. In addition, the recessed microstructures can better reduce the average reflectance of the light-emitting diode display panel as a whole than the protruding microstructures. The simulation data of the average reflectance of the light-emitting diode display panel as a whole and the proportion of the area occupied by the protruding microstructures are shown in Table 2. The simulation data of the average reflectance of the light-emitting diode display panel as a whole and the proportion of the area occupied by the recessed microstructures are shown in Table 3.

[0091] Table 2

[0092]

[0093] Table 3

[0094]

[0095] Figure 5 is a line graph of simulation data of the average reflectance of a light-emitting diode display panel as a whole and the proportion of the area occupied by protruding microstructures or recessed microstructures according to an embodiment of the present application. In Figure 5 in FIG. 8, the vertical axis refers to the average reflectance of the light-emitting diode display panel as a whole, and in Figure 5 in FIG. 8, the vertical axis refers to the average reflectance of the light-emitting diode display panel as a whole, and in

[0096] Please refer to Figure 1 , Figure 2 and Figure 5 in FIG. 8, the vertical axis refers to the average reflectance of the light-emitting diode display panel as a whole, and in Figure 5 in FIG. 8, the vertical axis refers to the average reflectance of the light-emitting diode display panel as a whole, and in Figure 5 the horizontal axis in FIG. 8 refers to the proportion of the area of the vertical projection of the protruding microstructures PM or the recessed microstructures RM on the light-emitting diode substrate 100 to the area of the vertical projection of the light-transmitting structures on the light-emitting diode substrate 100.

[0097] In Figure 5 , data of the convex microstructure PM with different values of bidirectional reflectance distribution function (BRDF) are represented by different lines. The physical meaning of bidirectional reflectance distribution function is the ratio of a small increment of surface irradiance from an incident direction to the corresponding increment of reflected radiance in a reflected direction. Different values of BRDF can be obtained by changing the material of the coating layer 230a on the particle structure 220a or by not disposing the coating layer 230a on the particle structure 220a. In addition, data of the convex microstructure PM and the recessed microstructure RM without scattering are also included in Figure 5 .

[0098] It can be known from Figure 5 that the lower the value of BRDF of the convex microstructure PM, the lower the average reflectance of the whole light emitting diode display panel. In addition, when the area of the vertical projection of the convex microstructure PM or the recessed microstructure RM on the light emitting diode substrate 100 accounts for more than 90% of the area of the vertical projection of the light penetration structure on the light emitting diode substrate 100, the recessed microstructure RM can reduce the average reflectance of the whole light emitting diode display panel more than the convex microstructure PM. The simulation data of the average reflectance of the whole light emitting diode display panel and the proportion of the occupied area of the convex microstructure or the recessed microstructure are shown in Table 4.

[0099] Table 4

[0100]

[0101] Figure 6 is a line graph of simulation data of the average reflectance of the whole light emitting diode display panel and the ratio of the depth of the recessed microstructure to half of the maximum width according to an embodiment of the present application. In Figure 6 , the reflectance of the light absorbing layer (for example, black ink) in the light emitting diode substrate in the light emitting diode display panel is less than 5%, and the reflectance of the whole light emitting diode substrate is less than 10%.

[0102] Please refer to Figure 2 and Figure 6 , the vertical axis in Figure 6 indicates the average reflectance of the whole light emitting diode display panel, and the horizontal axis in Figure 6 indicates the ratio D2 / R2 of the depth D2 to half of the maximum width R2 of the recessed microstructure RM.

[0103] In Figure 6In some embodiments, the data of the recessed microstructures RM with different proportions of occupied area are represented by different lines, where the proportion of occupied area refers to the proportion of the area of the vertical projection of the recessed microstructures RM on the light-transmitting structure 200b on the light-emitting diode substrate 100.

[0104] By Figure 6 It can be seen that the higher the proportion of occupied area of the recessed microstructures RM, the lower the average reflectivity of the overall light-emitting diode display panel. In some embodiments, when the proportion of the area of the vertical projection of the recessed microstructures RM on the light-transmitting structure 200b on the light-emitting diode substrate 100 is greater than or equal to 75%, the average reflectivity of the overall light-emitting diode display panel can be preferably reduced.

[0105] In addition, the higher the D2 / R2 of the recessed microstructures RM, the lower the average reflectivity of the overall light-emitting diode display panel. In other words, the recessed microstructures RM that are deep and narrow can preferably reduce the average reflectivity of the overall light-emitting diode display panel. In some embodiments, when the D2 / R2 of the recessed microstructures RM is greater than or equal to 0.4, the average reflectivity of the overall light-emitting diode display panel can be preferably reduced.

[0106] Figure 7 is a perspective view of a recessed microstructure according to an embodiment of the present application. In Figure 7 In some embodiments, the recessed microstructures RM1, for example, are one of the shapes of the recessed microstructures of the first surface of the light-transmitting structure of the light-emitting diode display panel of the foregoing embodiments. For other descriptions of the light-emitting diode display panel, please refer to the foregoing embodiments, which will not be described here again.

[0107] For reference Figure 7 The recessed microstructures RM1 of the first surface of the light-transmitting structure include a cuboid. The depth d of the recessed microstructures RM1 is 1-100 microns, the first width w1 of two sides of the recessed microstructures RM1 is 1-100 microns, and the second width w2 of the other two sides of the recessed microstructures RM1 is 1-100 microns.

[0108] Figure 8 is a perspective view of a recessed microstructure according to an embodiment of the present application. In Figure 8 In some embodiments, the recessed microstructures RM2, for example, are one of the shapes of the recessed microstructures of the first surface of the light-transmitting structure of the light-emitting diode display panel of the foregoing embodiments. For other descriptions of the light-emitting diode display panel, please refer to the foregoing embodiments, which will not be described here again.

[0109] For reference Figure 8The recessed microstructure RM2 of the first surface of the light penetration structure comprises a semi-ellipsoid. The depth d of the recessed microstructure RM2 is 1-25 microns, the first width w1 of the major axis of the recessed microstructure RM2 is 1-50 microns, and the second width w2 of the minor axis of the recessed microstructure RM2 is 1-50 microns.

[0110] Figure 9A is a perspective view of a recessed microstructure according to an embodiment of the present application. Figure 9B is Figure 9A is a top view of the recessed microstructure of Figure 9C is Figure 9A is a side view of the recessed microstructure of Figure 9D is Figure 9A is a front view of the recessed microstructure of

[0111] In Figure 9A to Figure 9D , the recessed microstructure RM3 is, for example, one of the shapes of the recessed microstructure of the first surface of the light penetration structure of the light-emitting diode display panel of the aforementioned embodiments. For other descriptions of the light-emitting diode display panel, please refer to the foregoing embodiments, which will not be described here again.

[0112] Please refer to Figure 9A to Figure 9D , the recessed microstructure RM3 of the first surface of the light penetration structure comprises a roof shape. The recessed microstructure RM3 comprises a first side SW1, a second side SW2, a third side SW3, and a fourth side SW4 connected in sequence. The first side SW1 is opposite to the third side SW3, and the second side SW2 is opposite to the fourth side SW4. The included angle θ1 between the first side SW1 and the first surface of the light penetration structure and the included angle θ1 between the third side SW3 and the first surface of the light penetration structure are 30-60 degrees. The included angle θ2 between the second side SW2 and the first surface of the light penetration structure and the included angle θ2 between the fourth side SW4 and the first surface of the light penetration structure are 30-60 degrees.

[0113] The depth d of the recessed microstructure RM3 is 1-25 microns, the first width w1 of the first side SW1 and the third side SW3 is 1-50 microns, and the second width w2 of the second side SW2 and the fourth side SW4 is 1-50 microns.

[0114] Figure 10A is a perspective view of a recessed microstructure according to an embodiment of the present application. Figure 10B is Figure 10A is a sectional view of the recessed microstructure of

[0115] In Figure 10A and Figure 10BIn this context, the recessed microstructure RM4 is, for example, one of the shapes of the recessed microstructure on the first surface of the light-transmitting structure of the light-emitting diode display panel in the aforementioned embodiment. For other descriptions of the light-emitting diode display panel, please refer to the preceding embodiments, which will not be repeated here.

[0116] Please refer to Figure 10A and Figure 10B The recessed microstructure RM4 is conical in shape. The sidewalls of the recessed microstructure RM4 selectively have rounded corners TR between themselves and the first surface of the light-transmitting structure, with the radius of curvature of the rounded corners TR ranging from 1 μm to 10 μm. The depth d of the recessed microstructure RM4 ranges from 1 μm to 25 μm, and the first width w1 of the recessed microstructure RM4 ranges from 1 μm to 50 μm. The bottom of the recessed microstructure RM4 selectively has rounded corners PR, with the radius of curvature of the rounded corners PR ranging from 1 μm to 10 μm.

[0117] Figure 11 This is a three-dimensional schematic diagram of a recessed microstructure according to an embodiment of the present invention.

[0118] exist Figure 11 In this context, the recessed microstructure RM5 is, for example, one of the shapes of the recessed microstructure on the first surface of the light-transmitting structure of the light-emitting diode display panel in the aforementioned embodiment. For other descriptions of the light-emitting diode display panel, please refer to the preceding embodiments, which will not be repeated here.

[0119] Please refer to Figure 11 The recessed microstructure RM5 is annular. In this embodiment, the depth d of the recessed microstructure RM5 is 1 micrometer to 25 micrometers. The inner side of the recessed microstructure RM5 is a circle with radius r1, where radius r1 is 5 micrometers to 500 micrometers. The cross-section of the recessed microstructure RM5 is a portion (e.g., a semicircle) of a circle with radius r2, where radius r2 is 1 micrometer to 25 micrometers.

[0120] Figure 12 This is a three-dimensional schematic diagram of a recessed microstructure according to an embodiment of the present invention.

[0121] exist Figure 12 In this context, the recessed microstructure RM6 is, for example, one of the shapes of the recessed microstructure on the first surface of the light-transmitting structure of the light-emitting diode display panel in the aforementioned embodiment. For other descriptions of the light-emitting diode display panel, please refer to the preceding embodiments, which will not be repeated here.

[0122] Please refer to Figure 12 The recessed microstructure RM6 is hexagonal prism-shaped. In this embodiment, the depth d of the recessed microstructure RM6 is 1 micrometer to 25 micrometers. Half of the maximum width R of the recessed microstructure RM5 is 1 micrometer to 25 micrometers.

[0123] Figure 13is a histogram of average reflectance of the overall light-emitting diode display panel with different recessed microstructures. In Figure 13 , the reflectance of the light-absorbing layer (e.g., black ink) in the light-emitting diode substrate in the light-emitting diode display panel is less than 5%, and the reflectance of the overall light-emitting diode substrate is less than 10%. In Figure 13 , the depth of the recessed microstructure is 2.165 microns.

[0124] Please refer to Figure 13 , the long column with different fill patterns represents the data of the recessed microstructure with different area ratios, where the area ratio refers to the ratio of the area of the vertical projection of the recessed microstructure on the light-emitting diode substrate to the area of the vertical projection of the light-transmitting structure on the light-emitting diode substrate.

[0125] It can be seen from Figure 13 that when the area ratio of the recessed microstructure is 90%, the average reflectance of the overall light-emitting diode display panel is low. In addition, the average reflectance of the overall light-emitting diode display panel will change due to the shape of the recessed microstructure.

[0126] Figure 14 is a cross-sectional schematic diagram of a light-emitting diode display panel according to an embodiment of the present application. It must be pointed out that, Figure 14 the embodiment uses the element numbers and part of the content of Figure 2 the embodiment, where the same or similar numbers are used to represent the same or similar elements, and the description of the same technical content is omitted. For the description of the omitted part, please refer to the foregoing embodiment, which will not be described here.

[0127] Figure 14 The main difference between the light-emitting diode display panel 10c of Figure 2 and the light-emitting diode display panel 10b of Figure 14 is that:

[0128] Please refer to Figure 14The light-absorbing structure 300a includes a light-absorbing layer 310a. In some embodiments, the light-absorbing layer 310a contains carbon black or other black material, for example. When the light-absorbing layer 310a is a film layer containing carbon black or other black material, the specular component included / excluded (SCI / SCE) of the light-emitting diode display panel 10c is 1.0 to 2.5, and the light-absorbing layer 310a can absorb 50% to 90% of light. In other embodiments, the light-absorbing layer 310a is a linear polarizer. When the light-absorbing layer 310a is a linear polarizer, the SCI / SCE of the light-emitting diode display panel 10c is 1.8 to 2.2, and the light-absorbing layer 310a can absorb 50% of light.

[0129] The light-absorbing layer 310a can be used to absorb light passing through the light-transmitting structure 200b and light reflected by the light-emitting diode substrate 100. However, the light-absorbing layer 310a also absorbs light emitted by the light-emitting diode substrate 100 itself. When the light-absorbing layer 310a is a film layer containing carbon black or other black material, the light-emitting efficiency of the light-emitting diode display panel 10c itself is 30% to 70%. When the light-absorbing layer 310a is a linear polarizer, the light-emitting efficiency of the light-emitting diode display panel 10c itself is 50%.

[0130] In the present embodiment, the substrate layer SL is located between the light-transmitting structure 200b and the light-absorbing structure 300a, and the main body portion 210b of the light-transmitting structure 200b is directly formed on the substrate layer SL, but the present application is not limited thereto. In other embodiments, the main body portion 210b of the light-transmitting structure 200b is directly formed on the light-absorbing layer 310a, wherein the light-absorbing layer 310a includes a material different from the main body portion 210b, and the refractive index of the main body portion 210b is less than the refractive index of the light-absorbing layer 310a. In the embodiment in which the main body portion 210b is directly formed on the light-absorbing layer 310a, the refractive index of the light-absorbing layer 310a is greater than or equal to 1.4, for example 1.5 or 1.53.

[0131] Figure 15 is a cross-sectional view of a light-emitting diode display panel according to an embodiment of the present application. It must be noted that, Figure 15 embodiments of Figure 2 embodiments of the present application, the same or similar reference numerals are used to represent the same or similar elements, and the description of the same technical content is omitted. For the omitted part, refer to the foregoing embodiments, which will not be described here.

[0132] Figure 15 The light-emitting diode display panel 10d of Figure 2 The main difference between the light-emitting diode display panel 10d of Figure 15The light emitting diode display panel 10d further comprises a light absorbing structure 300b, wherein the light absorbing structure 300b is located between the light penetrating structure 200b and the light emitting diode substrate 100.

[0133] Please refer to Figure 15 The light absorbing structure 300b comprises a stack of a linear polarizer 310b and a quarter wavelength wave plate 320b. The light from the outside becomes first linearly polarized light with a first polarization direction after passing through the linear polarizer 310b. The first linearly polarized light becomes first circularly polarized light after passing through the quarter wavelength wave plate 320b. The first circularly polarized light becomes second circularly polarized light with a second polarization direction opposite to the first polarization direction after being reflected by the light emitting diode substrate 100. The second circularly polarized light becomes second linearly polarized light with a second polarization direction perpendicular to the first polarization direction after passing through the quarter wavelength wave plate 320b. The second linearly polarized light cannot pass through the linear polarizer 310b, and thus the light absorbing structure 300b can effectively reduce the overall reflectivity of the light emitting diode display panel 10d. In the embodiment, the SCI / SCE of the light emitting diode display panel 10d is less than 1, and the light absorbing structure 300b can almost completely absorb the light from the outside which is incident into the light emitting diode display panel 10d and reflected by the light emitting diode substrate 100. The light absorbing structure 300b also absorbs the light emitted by the light emitting diode substrate 100, and the light emitting efficiency of the light emitting diode display panel 10d is 50%.

[0134] In the embodiment, the substrate layer SL is located between the light penetrating structure 200b and the light absorbing structure 300b, and the main body part 210b of the light penetrating structure 200b is directly formed on the substrate layer SL, but the present application is not limited thereto. In other embodiments, the main body part 210b of the light penetrating structure 200b is directly formed on the linear polarizer 310b, wherein the linear polarizer 310b comprises a material different from the main body part 210b, and the refractive index of the main body part 210b is less than the refractive index of the linear polarizer 310b. In the embodiment in which the main body part 210b is directly formed on the linear polarizer 310b, the refractive index of the linear polarizer 310b is greater than or equal to 1.4, for example, 1.5 or 1.53.

[0135] Figure 14 And Figure 15 The light emitting diode display panel 10c comprising the light absorbing structure 300a and the light emitting diode display panel 10d comprising the light absorbing structure 300b are respectively proposed, but the present application is not limited to the light emitting diode display panel comprising the light absorbing structure. When the light emitting diode display panel does not comprise the light absorbing structure, for example, Figure 1 Or Figure 2As shown, the SCI / SCE of the light emitting diode display panel can be about 2.0, and the light emitting efficiency of the light emitting diode display panel can be close to 100%, i.e. the light emitted by the light emitting diodes in the light emitting diode display panel can be almost not absorbed by other components in the light emitting diode display panel.

[0136] Figure 16 is a schematic cross-sectional view of a light emitting diode substrate according to an embodiment of the present application. In Figure 16 , the light emitting diode substrate 100b is, for example, one of the structures of the light emitting diode substrate 100 of the light emitting diode display panel of the foregoing embodiments. For other descriptions of the light emitting diode display panel, please refer to the foregoing embodiments, which will not be described herein again.

[0137] Please refer to Figure 16 , the light emitting diode substrate 100b includes a substrate 110, a plurality of light emitting diode package structures 120, and a light absorbing layer 130b. The light emitting diode package structures 120 are disposed on the substrate 110. Each of the light emitting diode package structures 120 includes one or more light emitting diodes 122, 124, 126, an interposer 128, and a package material 127 encapsulating the light emitting diodes 122, 124, 126. The package material 127 is, for example, a transparent package material. The light emitting diodes 122, 124, 126 include light emitting diodes of the same or different colors. For example, the light emitting diodes 122, 124, 126 are red light emitting diodes, green light emitting diodes, and blue light emitting diodes, respectively. Electrodes 121 of the light emitting diodes 122, 124, 126 are electrically connected to the interposer 128 through solder, conductive adhesive, or other conductive structures, and the package material 127 encapsulates the light emitting diodes 122, 124, 126 on the interposer 128.

[0138] In the present embodiment, the substrate 110 is a circuit board, and electrodes P of the light emitting diode package structures 120 are electrically connected to the substrate 110 through solder, conductive adhesive, or other conductive structures. The light emitting diode package structures 120 are encapsulated on the substrate 110 through a package on board (POB) technology.

[0139] The light-absorbing layer 130b is located on the substrate 110 and between the adjacent LED package structures 120. In some embodiments, the light-absorbing layer 130b has a reflectivity less than or equal to 10%. The light-absorbing layer 130b is, for example, black ink or other black material. In the present embodiment, the light-absorbing layer 130b is a single layer structure, but the present application is not limited thereto. In other embodiments, the light-absorbing layer 130b is a multi-layer structure, and the light-absorbing layer 130b includes a stack of a transparent encapsulation material layer and a black material layer. In the present embodiment, the top surface of the light-absorbing layer 130b is flush with the top surface of the LED package structure 120, but the present application is not limited thereto. In other embodiments, the top surface of the light-absorbing layer 130b is lower than the top surface of the LED package structure 120.

[0140] Figure 17 FIG. 1 is a schematic cross-sectional view of an LED substrate according to an embodiment of the present application. Figure 17 In the present embodiment, the LED substrate 100a is, for example, one of the structures of the LED substrate 100 of the LED display panel of the foregoing embodiments. For other descriptions of the LED display panel, please refer to the foregoing embodiments, which will not be repeated here.

[0141] Please refer to Figure 17 The LED substrate 100a includes a substrate 110, a plurality of LEDs 122, 124, 126, and a light-absorbing layer 130a. The LEDs 122, 124, 126 are disposed on the substrate 110. The LEDs 122, 124, 126 include LEDs of the same or different colors. For example, the LEDs 122, 124, 126 are red LEDs, green LEDs, and blue LEDs, respectively.

[0142] In the present embodiment, the substrate 110 is a circuit board, and the electrodes P of the LEDs 122, 124, 126 are electrically connected to the substrate 110 through solder, conductive adhesive, or other conductive structures. The LEDs 122, 124, 126 are packaged on the substrate 110 through a chip on board (COB) technology.

[0143] A light-absorbing layer 130a is located on the substrate 110 and between adjacent light-emitting diodes 122, 124, and 126. In some embodiments, the reflectivity of the light-absorbing layer 130a is less than or equal to 10%. In some embodiments, the light-absorbing layer 130a is, for example, black ink or other black material. In this embodiment, the light-absorbing layer 130a is a single-layer structure, but the invention is not limited thereto. In other embodiments, the light-absorbing layer 130a is a multilayer structure, and the light-absorbing layer 130a includes a stacked layer of transparent encapsulation material layer and black material layer. In this embodiment, the top surface of the light-absorbing layer 130a is flush with the top surface of the light-emitting diodes 122, 124, and 126, but the invention is not limited thereto. In other embodiments, the top surface of the light-absorbing layer 130a is lower than the top surface of the light-emitting diodes 122, 124, and 126.

[0144] In this embodiment, compared to the light-emitting diode substrate 100b manufactured using on-board packaging technology (such as...), Figure 16 As shown, the area of ​​the light-absorbing layer 130a of the light-emitting diode substrate 100a can be relatively large, thereby obtaining a lower reflectivity.

[0145] Figure 18 This is a line graph showing simulated data of the average reflectance of the entire light-emitting diode display panel and the reflectance of the light-emitting diode substrate according to an embodiment of the present invention. Figure 18 In the light-transmitting structure 200a of the LED display panel, there are raised microstructures PM, such as... Figure 1 As shown. In Figure 18 In this structure, the refractive index of the main body 210a (and the particle structure 220a) of the light-transmitting structure 200a is 1.3, and the refractive index of the substrate layer SL is 1.5. Figure 18 In this embodiment, the area of ​​the raised microstructure PM projected vertically onto the light-emitting diode substrate 100 occupies 90% of the area of ​​the light-transmitting structure 200a projected vertically onto the light-emitting diode substrate 100. Figure 18 In this context, the D1 / R1 ratio of the protruding microstructure PM is set to 1.

[0146] Please also refer to Figure 1 and Figure 18 ,exist Figure 18 The vertical axis in the figure refers to the average reflectivity of the entire LED display panel. Figure 18 The horizontal axis in the figure refers to the reflectivity of the LED substrate 100. The average reflectivity of the entire LED display panel 10a decreases as the reflectivity of the LED substrate 100 decreases. Therefore, selecting an LED substrate 100 with lower reflectivity helps to reduce the overall average reflectivity of the LED display panel 10a. In some embodiments, the reflectivity of the LED substrate 100 is less than 10%, thereby reducing the overall average reflectivity of the LED display panel 10a.

[0147] Figure 19 FIG. 1 is a schematic cross-sectional view of a light-emitting diode display panel according to an embodiment of the present application. It must be noted that, Figure 19 Embodiments of the present application will be described below with reference to Figure 16 Embodiments of the present application will be described below with reference to

[0148] Please refer to Figure 19 In the present embodiment, the main body 210b of the light-transmitting structure 200b of the light-emitting diode display panel 10e is directly formed on the encapsulation material 127 of the light-emitting diode substrate 100b. In the present embodiment, the recessed microstructure RM of the light-transmitting structure 200b overlaps the light-emitting diode encapsulation structure 120 but does not overlap the gap between the two adjacent light-emitting diode encapsulation structures 120, but the present application is not limited thereto. In other embodiments, the recessed microstructure RM of the light-transmitting structure 200b overlaps the light-emitting diode encapsulation structure 120 and the gap between the two adjacent light-emitting diode encapsulation structures 120.

Claims

1. A light emitting diode display panel, comprising: a light emitting diode substrate, wherein the light emitting diode substrate comprises: a substrate and a plurality of light emitting diodes disposed on the substrate, the substrate being a circuit board, and an electrode of each of the light emitting diodes being electrically connected to the circuit board by solder or conductive adhesive; and a light absorbing layer located on the circuit board and between adjacent ones of the light emitting diodes, wherein a top surface of the light absorbing layer is flush with or lower than a top surface of the light emitting diodes; and a light penetrating structure located on the light emitting diode substrate, wherein a first surface of the light penetrating structure is an external surface of the light emitting diode display panel, and the first surface of the light penetrating structure has a plurality of protruding microstructures or a plurality of recessed microstructures, wherein the light penetrating structure comprises a main body portion, wherein a surface of the main body portion comprises a plurality of grooves, wherein a material of the main body portion comprises polymethyl methacrylate, polyethylene terephthalate, cellulose triacetate or cyclic olefin polymer, and wherein a refractive index of the main body portion is less than 1.

4. 2.The light emitting diode display panel of claim 1, wherein the light penetrating structure further comprises: a coating layer conformally disposed in the grooves of the main body portion to form the recessed microstructures on the first surface, each of the recessed microstructures having a depth of 0.5 micrometers to 10 micrometers, a half of a maximum width of each of the recessed microstructures being 0.5 micrometers to 10 micrometers, and each of the recessed microstructures having a shape of a hemisphere, a semi-ellipsoid, a cube, a cuboid, a hexagonal prism, a roof, a cone or a ring. 3.The light emitting diode display panel of claim 2, wherein the main body portion is formed on a substrate layer, and a refractive index of the main body portion is less than a refractive index of the substrate layer, the refractive index of the substrate layer being 1.5 or 1.

53. 4.The light emitting diode display panel of claim 1, wherein the light penetrating structure comprises: a plurality of particle structures respectively embedded in the grooves of the surface of the main body portion; and a coating layer conformally disposed on the main body portion and the particle structures to form the protruding microstructures on the first surface, each of the protruding microstructures having a shape of a hemisphere, a semi-ellipsoid, a cube, a cuboid, a hexagonal prism, a roof, a cone or a ring, a thickness of each of the protruding microstructures being 0.5 micrometers to 10 micrometers, a half of a maximum width of each of the protruding microstructures being 0.5 micrometers to 10 micrometers, and an area of a vertical projection of the protruding microstructures on the light emitting diode substrate occupying a proportion of 90% of an area of a vertical projection of the light penetrating structure on the light emitting diode substrate. 5.The light emitting diode display panel of claim 4, wherein the main body portion is formed on a substrate layer, and a refractive index of the main body portion is less than a refractive index of the substrate layer, the refractive index of the substrate layer being 1.5 or 1.

53. 6.The light emitting diode display panel of claim 1, wherein each of the light emitting diodes of the light emitting diode substrate is a red light emitting diode, a green light emitting diode or a blue light emitting diode, and the light absorbing layer is black ink. ​ 7. The light emitting diode display panel of claim 1, wherein the light absorbing layer has a reflectivity less than or equal to 10%, and wherein the light absorbing layer comprises a stack of a transparent encapsulation material layer and a black material layer.

8. The light emitting diode display panel of claim 1, wherein the first surface of the light penetrating structure is provided with the recessed microstructures, wherein a ratio of an area of a vertical projection of the recessed microstructures on the light emitting diode substrate to an area of a vertical projection of the light penetrating structure on the light emitting diode substrate is greater than or equal to 75%, wherein the body portion is formed on a substrate layer, and a refractive index of the body portion is less than a refractive index of the substrate layer, the refractive index of the substrate layer being 1.5 or 1.53, and wherein the light emitting diode display panel further comprises a light absorbing structure between the substrate layer and the light emitting diode substrate, the light absorbing structure comprising a stack of a linear polarizer and a quarter wavelength waveplate, the linear polarizer being between the substrate layer and the quarter wavelength waveplate, the quarter wavelength waveplate being between the light emitting diode substrate and the linear polarizer, and the refractive index of the body portion being less than a refractive index of the linear polarizer.

9. The light emitting diode display panel of claim 1, wherein the first surface of the light penetrating structure is provided with the recessed microstructures, and a ratio D2 / R2 of a depth D2 of one of the recessed microstructures to half R2 of a maximum width of the one of the recessed microstructures is greater than or equal to 0.4.

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