Transparent display panel and its manufacturing method

Abstract

An embodiment of the present application provides a transparent display panel and a method for manufacturing the same. The transparent display panel includes: a substrate having a transparent region and a display region; a light-emitting device layer disposed on the display region on one side of the substrate; a black matrix spaced apart and distributed on the side of the light-emitting device layer away from the substrate; and a packaging layer, with a part of the packaging layer disposed on the transparent region of the substrate and another part of the packaging layer disposed on the light-emitting device layer and the black matrix. By directly disposing the packaging layer on the transparent region of the substrate, the transmittance of the transparent region is increased, the haze is reduced, and a sacrificial layer is prepared and removed, so that the step difference between the transparent region and the display region becomes smaller or flush, thereby avoiding defects such as residue of the black matrix at the bottom of the step difference and thinning of the thickness at the top of the step difference, improving the light-shielding ability of the display region, and further improving the transmittance and display effect of the transparent display panel at the same time.

Description

Technical Field

[0001] This application relates to the field of display technologies. Specifically, this application relates to a transparent display panel and a method for manufacturing the same. Background Art

[0002] With the continuous development of display technologies, various new technologies have emerged. Due to the application of the transparent display panel feature, the transparent display technology has attracted increasing attention. However, the transmittance of existing transparent display devices is relatively low, generally less than 60%. Therefore, improving the transmittance of transparent display devices and the performance of products is a top priority in current transparent display technologies.

[0003] The key device of the transparent display technology is the transparent display panel. When the panel is in the off state, it resembles a transparent glass; when it is working, the viewer can not only see the content displayed on the panel but also see the object behind the panel through the panel. Therefore, it is required that the transparent display panel not only has an ultra-high transmittance but also has excellent display effects.

[0004] In summary, the transparent display panels in the prior art have the technical problem that they cannot balance the transmittance and the display effects. Summary of the Invention

[0005] In view of the shortcomings of the existing methods, this application provides a transparent display panel and a method for manufacturing the same, to solve the technical problem that the transparent display panels in the prior art cannot balance the transmittance and the display effects.

[0006] In a first aspect, an embodiment of this application provides a transparent display panel, including:

[0007] A substrate, having a transparent area and a display area;

[0008] A light-emitting device layer, disposed on the display area on one side of the substrate;

[0009] A black matrix, spaced apart and distributed on the side of the light-emitting device layer away from the substrate;

[0010] An encapsulation layer, with a part of the encapsulation layer disposed on the transparent area of the substrate, and another part of the encapsulation layer disposed on the light-emitting device layer and the black matrix.

[0011] In some embodiments of this application, the transparent display panel further includes a first conductive seed layer, and the first conductive seed layer is located between the black matrix and the light-emitting device layer.

[0012] In some embodiments of this application, the orthographic projection of the black matrix on the substrate covers the orthographic projection of the first conductive seed layer on the substrate.

[0013] In a second aspect, an embodiment of this application provides a transparent display panel, including:

[0014] Provide a substrate, the substrate having a display region and a transparent region;

[0015] Prepare a light-emitting device layer in the display region of the substrate;

[0016] Prepare a sacrificial layer in the transparent region of the substrate;

[0017] Prepare a light-shielding material layer on the side of both the light-emitting device layer and the sacrificial layer away from the substrate;

[0018] Pattern the light-shielding material layer to form a black matrix, the black matrix being located on the side of a part of the light-emitting device layer away from the substrate;

[0019] Remove the sacrificial layer.

[0020] In some embodiments of the present application, the step of preparing a sacrificial layer in the transparent region of the substrate includes:

[0021] Prepare a conductive seed layer on one side of the substrate, the conductive seed layer including a first conductive seed layer covering the light-emitting device layer and a second conductive seed layer covering the transparent region of the substrate;

[0022] Prepare a barrier wall on the side of the first conductive seed layer away from the substrate;

[0023] Prepare a conductive growth layer on the side of the second conductive seed layer away from the substrate, the second conductive seed layer and the conductive growth layer forming a sacrificial layer.

[0024] In some embodiments of the present application, when preparing a conductive growth layer in the transparent region of the substrate, the upper surface height of the conductive growth layer is not less than 1 / 2 of the upper surface height of the first conductive seed layer and not greater than 3 / 2 of the upper surface height of the first conductive seed layer.

[0025] In some embodiments of the present application, the step of preparing a light-shielding material on the side of both the light-emitting device layer and the sacrificial layer away from the substrate includes:

[0026] Remove the barrier wall;

[0027] Prepare a light-shielding material on the side of both the first conductive seed layer and the sacrificial layer away from the substrate.

[0028] In some embodiments of the present application, when preparing a conductive growth layer in the transparent region of the substrate, the upper surface height of the conductive growth layer is not less than 1 / 2 of the upper surface height of the light-emitting device layer and not greater than 3 / 2 of the upper surface height of the light-emitting device layer.

[0029] In some embodiments of the present application, the step of preparing a light-shielding material on the side of both the light-emitting device layer and the sacrificial layer away from the substrate includes:

[0030] Remove the barrier wall and the first conductive seed layer;

[0031] A light-shielding material is prepared on a side of both the light-emitting device layer and the sacrificial layer away from the substrate.

[0032] In some embodiments of the present application, in the step of preparing a conductive growth layer on a side of the second conductive seed layer away from the substrate, it includes:

[0033] A metal layer is prepared on a side of the second conductive seed layer away from the substrate, the metal layer forms the conductive growth layer, and the metal layer includes at least one of copper, nickel, gold, palladium-nickel, tin-lead, and silver.

[0034] In some embodiments of the present application, in the step of preparing a barrier wall on a side of the first conductive seed layer away from the substrate, it includes:

[0035] A positive photoresist is coated on a side of both the first conductive seed layer and the second conductive seed layer away from the substrate to form a barrier wall material layer;

[0036] The barrier wall material layer is patterned to expose the second conductive seed, and a barrier wall located on a side of the first conductive seed layer away from the substrate is obtained.

[0037] In some embodiments of the present application, in the step of preparing a light-shielding material on a side of both the light-emitting device layer and the sacrificial layer away from the substrate, it includes:

[0038] A negative photoresist is coated on a side of both the light-emitting device layer and the sacrificial layer away from the substrate to form a light-shielding material layer.

[0039] In some embodiments of the present application, after the step of removing the sacrificial layer, it includes:

[0040] An encapsulation layer is prepared on a side of the substrate, and the encapsulation layer covers the transparent region of the substrate, the light-emitting device layer, and the black matrix.

[0041] The beneficial technical effects brought by the technical solution provided by the embodiments of the present application include: by directly covering the encapsulation layer on the transparent region of the substrate, the transmittance of the transparent region is increased and the haze is reduced; the sacrificial layer is prepared and removed in the transparent region of the substrate, so that in the step of preparing the black matrix, the step difference between the transparent region and the display region becomes smaller or flush, thereby avoiding defects such as residue at the bottom of the step difference and thinning of the thickness at the top of the step difference of the black matrix, improving the light-shielding ability of the display region, and further improving the transmittance and display effect of the transparent display panel at the same time. The additional aspects and advantages of the present application will be partially given in the following description, and these will become obvious from the following description, or will be understood through the practice of the present application. Description of the Drawings

[0042] The above and / or additional aspects and advantages of the present application will become obvious and easy to understand from the following description of the embodiments in conjunction with the drawings, where:

[0043] Figure 1Schematic structural diagram of a transparent display panel in an embodiment of the present application;

[0044] Figure 2 Schematic flow diagram of a method for manufacturing a transparent display panel in an embodiment of the present application;

[0045] Figure 3 Schematic flow diagram of a method for manufacturing a transparent display panel in another embodiment of the present application;

[0046] Figures 4A - 4G Schematic step - by - step diagram of a method for manufacturing a transparent display panel in another embodiment of the present application;

[0047] Figure 5 Schematic flow diagram of a method for manufacturing a transparent display panel in yet another embodiment of the present application;

[0048] Figures 6A - 6E Schematic step - by - step diagram of a method for manufacturing a transparent display panel in yet another embodiment of the present application.

[0049] In the figure:

[0050] 1 - Substrate; 101 - Transparent region; 102 - Display region;

[0051] 2 - Light - emitting device layer; 201 - Buffer layer; 202 - First gate insulating layer; 203 - Second gate insulating layer; 204 - Interlayer dielectric layer; 205 - First planarization layer; 206 - First passivation layer; 207 - Second passivation layer; 208 - Second planarization layer; 209 - Semiconductor layer; 210 - First gate layer; 211 - Second gate layer; 212 - Data layer; 213 - Source - drain layer;

[0052] 3 - Sacrificial layer; 31 - Conductive seed layer; 301 - First conductive seed layer; 302 - Second conductive seed layer; 303 - Conductive growth layer; 304 - Dam;

[0053] 4 - Black matrix; 5 - Light - emitting diode; 6 - Encapsulation layer Detailed implementation manners

[0054] The following details the present application. Examples of embodiments of the present application are shown in the accompanying drawings, where the same or similar reference numerals denote the same or similar components or components with the same or similar functions throughout. In addition, if the detailed description of the known technology is unnecessary for showing the features of the present application, it will be omitted. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present application, and should not be construed as limiting the present application.

[0055] Those skilled in the art can understand that, unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by those of ordinary skill in the art to which this application belongs. It should also be understood that terms such as those defined in a general dictionary should be understood to have a meaning consistent with their meaning in the context of the prior art, and will not be interpreted in an idealized or overly formal sense unless specifically defined as here.

[0056] Those skilled in the art can understand that, unless specifically stated, the singular forms "a", "an", "above-mentioned" and "the" used herein may also include the plural forms. It should be further understood that the term "including" used in the description of this application means the presence of the described features, integers, steps, operations, elements and / or components, but does not exclude the presence or addition of one or more other features, integers, steps, operations, elements, components and / or their groups. It should be understood that when we say an element is "connected" or "coupled" to another element, it can be directly connected or coupled to other elements, or there may also be intermediate elements. In addition, "connected" or "coupled" used herein may include wireless connection or wireless coupling. The phrase "and / or" used herein includes all or any unit and all combinations of one or more related listed items.

[0057] Research has found that there are technical problems in the transparent display panels in the prior art that cannot balance the transmittance and display effect.

[0058] A transparent display panel and a preparation method thereof provided by this application aim to solve the above technical problems in the prior art. The technical solution of this application and how the technical solution of this application solves the above technical problems will be described in detail below with specific embodiments.

[0059] In a first aspect, an embodiment of this application provides a transparent display panel, as Figure 1 shown, Figure 1 is a schematic structural diagram of a transparent display panel in an embodiment of this application. The transparent display panel includes:

[0060] A substrate 1 having a transparent area 101 and a display area 102;

[0061] A light-emitting device layer 2 disposed on the display area 102 on one side of the substrate 1;

[0062] A black matrix 4 is spaced apart and distributed on the side of the light-emitting device layer 2 away from the substrate 1;

[0063] An encapsulation layer 6, a part of the encapsulation layer 6 is disposed on the transparent area 101 of the substrate 1, and another part of the encapsulation layer 6 is disposed on the light-emitting device layer 2 and the black matrix 4.

[0064] In this embodiment, the transparent region 101 of the substrate 1 is in direct contact with the encapsulation layer 6, and there is no other colored film layer between the two. The material of the encapsulation layer 6 is a transparent material, which can improve the transmittance of the transparent display panel.

[0065] In some embodiments of the present application, the transparent display panel further includes a first conductive seed layer 301, and the first conductive seed layer 301 is located between the black matrix 4 and the light-emitting device layer 2.

[0066] In one embodiment of the present application, a first conductive seed layer 301 is provided between the black matrix 4 and the light-emitting device layer 2.

[0067] In another embodiment of the present application, the black matrix 4 is in direct contact with the optical device layer.

[0068] In some embodiments of the present application, the orthographic projection of the black matrix 4 on the substrate 1 covers the orthographic projection of the first conductive seed layer 301 on the substrate 1.

[0069] In one embodiment, the step of removing the first conductive seed layer 301 is after the step of preparing the black matrix 4. The black matrix 4 actually becomes a mask for the first conductive seed layer 301. The orthographic projection of the black matrix 4 on the first conductive seed layer 301 covers a certain area, and the area of the first conductive seed layer 301 covered by the above projection is not removed. Then, the orthographic projection of the black matrix 4 on the substrate 1 covers the orthographic projection of the first conductive seed layer 301 on the substrate 1.

[0070] Based on the same inventive concept, in a second aspect, embodiments of the present application provide a method for manufacturing a transparent display panel. As Figure 2 shown, Figure 2 is a schematic flowchart of a method for manufacturing a transparent display panel in an embodiment of the present application. The method for manufacturing a transparent display panel includes the following steps:

[0071] S101. Provide a substrate 1, where the substrate 1 has a display region 102 and a transparent region 101;

[0072] S102. Prepare a light-emitting device layer 2 in the display region 102 of the substrate 1;

[0073] S103. Prepare a sacrificial layer 3 in the transparent region 101 of the substrate 1;

[0074] S104. Prepare a light-shielding material layer on the sides of both the light-emitting device layer 2 and the sacrificial layer 3 away from the substrate 1;

[0075] S105. Pattern the light-shielding material layer to form a black matrix 4, where the black matrix 4 is located on one side of a part of the light-emitting device layer 2 away from the substrate 1;

[0076] S106. Remove the sacrificial layer 3.

[0077] In this embodiment, the transmittance of the transparent display panel is improved by removing at least part of the film layer in the transparent region 101. A black matrix 4 (Black Matrix, BM) is disposed between adjacent sub-pixels to block metal traces, reduce reflectivity, improve contrast, and also reduce color deviation to improve the display effect of the transparent display panel.

[0078] Based on the above embodiment, to avoid: the method of removing at least part of the film layer in the transparent region 101 causes a large step difference between the display region 102 and the transparent region 101, resulting in residues of the black matrix 4 at the bottom of the step difference, reducing the transmittance of the panel and increasing the haze. At the top of the step difference, the thickness of the black matrix 4 is relatively thin, and the light-shielding ability is insufficient, affecting the light-shielding effect.

[0079] The preparation method in this embodiment also provides: after the step of removing at least part of the film layer in the transparent region 101 and before the step of preparing the black matrix 4, a sacrificial layer 3 is prepared in the transparent region 101 of the substrate 1. Due to the presence of the sacrificial layer 3, the step difference between the transparent region 101 and the display region 102 becomes smaller or flush, thereby avoiding defects such as residues of the black matrix 4 at the bottom of the step difference and thinning of the thickness at the top of the step difference. Removing the sacrificial layer 3 in subsequent steps can also increase the transmittance of the transparent region 101, reduce the haze, improve the light-shielding ability of the display region 102, and thus improve the transmittance and display effect of the transparent display panel simultaneously.

[0080] In some embodiments of the present application, the step of preparing the sacrificial layer 3 in the transparent region 101 of the substrate 1 includes:

[0081] A conductive seed layer 31 is prepared on one side of the substrate 1. The conductive seed layer 31 includes a first conductive seed layer 301 covering the light-emitting device layer 2 and a second conductive seed layer 302 covering the transparent region 101 of the substrate 1;

[0082] A barrier wall 304 is prepared on the side of the first conductive seed layer 301 away from the substrate 1;

[0083] A conductive growth layer 303 is prepared on the side of the second conductive seed layer 302 away from the substrate 1. The second conductive seed layer 302 and the conductive growth layer 303 form the sacrificial layer 3.

[0084] In this embodiment, before the step of preparing the sacrificial layer 3 in the transparent region 101 of the substrate 1: at least part of the film layer in the transparent region 101 is removed, and there is a large step difference between the transparent region 101 and the display region 102 of the substrate 1. To avoid defects, in this step, a conductive seed layer 31 is prepared on the side of the substrate 1 close to the light-emitting device layer 2. The conductive seed layer 31 covers the entire surface of the substrate 1. The conductive seed layer 31 covering the light-emitting device layer 2 on the substrate 1 is defined as the first conductive seed layer 301, and the conductive seed layer 31 directly covering the transparent region 101 of the substrate 1 is defined as the second conductive seed layer 302.

[0085] Since the height of the display region 102 of the substrate 1 is greater than the height of the transparent region 101, in order to prevent the height of the display region 102 from increasing further, the sacrificial layer 3 is only prepared in the transparent region 101, and a barrier 304 is prepared on the side of the first conductive seed layer 301 away from the substrate 1. To prevent the disordered growth of the conductive growth layer 303 on the first conductive seed layer 301, a barrier 304 covering the first conductive seed layer 301 is prepared.

[0086] After the barrier 304 is prepared, electroplating is performed on the side of the conductive seed layer 31 away from the substrate 1. The exposed conductive seed layer 31 will grow an electroplated layer. The first conductive seed layer 301 will not grow or grow less due to the coverage of the barrier 304. The electroplated layer will grow outward on the surface of the seed lead of the second conductive seed layer 302 to form a conductive growth layer 303.

[0087] In some embodiments of the present application, the conductive growth layer 303 is prepared in the transparent region 101 of the substrate 1, such that the upper surface height of the conductive growth layer 303 is not less than 1 / 2 of the upper surface height of the first conductive seed layer 301 and not greater than 3 / 2 of the upper surface height of the first conductive seed layer 301.

[0088] To ensure that the step difference between the transparent region 101 and the display region 102 of the substrate 1 is small, that is, the height difference between the upper surfaces of the film layers respectively carrying the light-shielding material in the transparent region 101 and the display region 102 is small, so as to effectively avoid the residue of the black matrix 4 at the bottom of the step difference and the thinning at the top of the step difference. This embodiment makes the height difference between the upper surfaces of the film layers respectively carrying the light-shielding material in the transparent region 101 and the display region 102 small, even 0.

[0089] In this embodiment, the film layer carrying the light-shielding material in the display area 102 is the first conductive seed layer 301, and the film layer carrying the light-shielding material in the transparent area 101 is the conductive growth layer 303, that is, the sacrificial layer 3. When the substrate 1, the sacrificial layer 3, and the first conductive seed layer 301 are all planarized, the upper surface height D1 of the conductive growth layer 303 refers to the distance between the upper surface of the conductive growth layer 303 and the upper surface of the substrate 1, and the upper surface height D2 of the first conductive seed layer 301 refers to the distance between the upper surface of the first conductive seed layer 301 and the upper surface of the substrate 1, and 1 / 2*D2 ≤ D1 ≤ 3 / 2*D2. Thereby, the residue of the black matrix 4 is reduced and the thinning is improved.

[0090] In an alternative embodiment, the upper surface height D1 of the conductive growth layer 303 is equal to the upper surface height D2 of the first conductive seed layer 301, D1 = D2. That is, the upper surface of the conductive growth layer 303 is flush with the upper surface of the first conductive seed layer 301. In the step of preparing the black matrix 4, the light-shielding material falls on the upper surface of the first conductive seed layer 301 in the display area 102 and the upper surface of the conductive growth layer 303 in the transparent area 101 respectively. There is no step difference between the display area 102 and the transparent area 101, and the black matrix 4 will not have residue and thinning.

[0091] In some embodiments of the present application, in the step of preparing the light-shielding material on the side of the light-emitting device layer 2 and the sacrificial layer 3 away from the substrate 1, it includes:

[0092] Removing the barrier wall 304;

[0093] Preparing the light-shielding material on the side of the first conductive seed layer 301 and the sacrificial layer 3 away from the substrate 1.

[0094] On the basis of the above embodiment, after the conductive growth layer 303 is prepared, in order to prevent the light-shielding material from falling on the barrier wall 304 and forming a new step difference, the barrier wall 304 is removed. The light-shielding material is prepared on the upper surfaces of the first conductive seed layer 301 and the sacrificial layer 3.

[0095] Compared with the embodiment of removing the first conductive seed layer 301 below, under the same other conditions, in this embodiment, the first conductive seed layer 301 is not completely removed, one process is reduced, the manufacturing time is saved, and the production efficiency is improved.

[0096] In some embodiments of the present application, the conductive growth layer 303 is prepared in the transparent area 101 of the substrate 1 such that the upper surface height of the conductive growth layer 303 is not less than 1 / 2 of the upper surface height of the light-emitting device layer 2 and not greater than 3 / 2 of the upper surface height of the light-emitting device layer 2.

[0097] In order to ensure that the step difference between the transparent region 101 and the display region 102 of the substrate 1 is small, that is, the height difference between the upper surfaces of the film layers carrying the light-shielding material in the transparent region 101 and the display region 102 is small, it is possible to effectively avoid the residue of the black matrix 4 at the bottom of the step difference and the thinning at the top of the step difference. In this embodiment, the height difference between the upper surfaces of the film layers carrying the light-shielding material in the transparent region 101 and the display region 102 is small, even zero.

[0098] In another embodiment of the present application, the film layer carrying the light-shielding material in the display region 102 is the light-emitting device layer 2, and the film layer carrying the light-shielding material in the transparent region 101 is the conductive growth layer 303, that is, the sacrificial layer 3. When the substrate 1, the sacrificial layer 3, and the light-emitting device layer 2 are all planarized, the upper surface height D3 of the conductive growth layer 303 refers to the distance between the upper surface of the conductive growth layer 303 and the upper surface of the substrate 1, and the upper surface height D4 of the light-emitting device layer 2 refers to the distance between the upper surface of the light-emitting device layer 2 and the upper surface of the substrate 1, and 1 / 2*D4 ≤ D3 ≤ 3 / 2*D4. Thereby reducing the residue of the black matrix 4 and improving the thinning.

[0099] In an alternative embodiment, the upper surface height D3 of the conductive growth layer 303 is equal to the upper surface height D4 of the light-emitting device layer 2, D3 = D4. That is, the upper surface of the conductive growth layer 303 is flush with the upper surface of the light-emitting device layer 2. In the step of preparing the black matrix 4, the light-shielding material falls on the upper surface of the light-emitting device layer 2 in the display region 102 and the upper surface of the conductive growth layer 303 in the transparent region 101 respectively. There is no step difference between the display region 102 and the transparent region 101, and the black matrix 4 will not have residue and thinning.

[0100] In some embodiments of the present application, in the step of preparing the light-shielding material on the side of the light-emitting device layer 2 and the sacrificial layer 3 away from the substrate 1, it includes:

[0101] Removing the barrier wall 304 and the first conductive seed layer 301;

[0102] Preparing the light-shielding material on the side of the light-emitting device layer 2 and the sacrificial layer 3 away from the substrate 1.

[0103] On the basis of the above embodiment, after the conductive growth layer 303 is prepared, in order to prevent the light-shielding material from falling on the barrier wall 304 and the first conductive seed layer 301 to form a new step difference, the barrier wall 304 is removed. The light-shielding material is prepared on the upper surfaces of the light-emitting device layer 2 and the sacrificial layer 3.

[0104] Compared with the above embodiments in which at least part of the first conductive seed layer 301 is retained, under the same other conditions, in this embodiment, the first conductive seed layer 301 is removed. On the one hand, the height D3 of the required sacrificial layer 3 becomes smaller, saving materials to a certain extent and reducing costs; on the other hand, the number of film layers in the display area 102 decreases, and the overall height also decreases, which is beneficial to the thinning and lightening of the transparent display panel.

[0105] In some embodiments of the present application, in the step of preparing the conductive growth layer 303 on the side of the second conductive seed layer 302 away from the substrate 1, it includes:

[0106] A metal layer is prepared on the side of the second conductive seed layer 302 away from the substrate 1, and the metal layer forms the conductive growth layer 303.

[0107] The metal layer includes at least one of copper, nickel, gold, palladium-nickel, tin-lead, and silver.

[0108] In a specific embodiment, the metal copper layer has advantages such as good electrical conductivity, thermal conductivity, and ductility. The electroplating material is metal copper. The conductive seed layer 31 is coated or immersed in the electroplating solution, the conductive seed layer 31 is connected to the cathode, and the electroplating solution is connected to the anode, and an electric current is applied between the cathode and the anode. Under the action of the electric field, the conductive growth layer 303 grows on the contact surface between the conductive seed layer 31 and the electroplating solution.

[0109] In some embodiments of the present application, in the step of preparing the barrier 304 on the side of the first conductive seed layer 301 away from the substrate 1, it includes:

[0110] A positive photoresist is coated on the sides of both the first conductive seed layer 301 and the second conductive seed layer 302 away from the substrate 1 to form a barrier 304 material layer;

[0111] The barrier 304 material layer is patterned to expose the second conductive seed, and the barrier 304 located on the side of the first conductive seed layer 301 away from the substrate 1 is obtained.

[0112] In some embodiments of the present application, in the step of preparing the light-shielding material layer on the sides of both the light-emitting device layer 2 and the sacrificial layer 3 away from the substrate 1, it includes:

[0113] A negative photoresist is coated on the sides of both the light-emitting device layer 2 and the sacrificial layer 3 away from the substrate 1 to form a light-shielding material layer.

[0114] In this embodiment, the barrier 304 material and the light-shielding material use photoresist materials with opposite optical properties.

[0115] In one embodiment, the material of the retaining wall 304 is negative photoresist, and the black matrix 4 is positive photoresist.

[0116] In another embodiment, since the light-shielding material is simultaneously prepared in the display area 102 and the transparent area 101 of the substrate 1, and the film height of the transparent area 101 is less than or equal to the film height of the display area 102, the thickness of the light-shielding material in the transparent area 101 is greater than or equal to the film thickness of the display area 102. If the light-shielding material uses positive photoresist, when removing the light-shielding material in the transparent area 101 in the subsequent process, the developing time is long, and inevitably part of the light-shielding material in the display area 102 will be peeled off, resulting in the risk of the black matrix 4 being too thin.

[0117] Also, since the black matrix 4 formed by the light-shielding material will remain in the transparent display panel and is often exposed to light during subsequent use, in order to prevent the morphology and properties of the black matrix 4 from changing, positive photoresist cannot be used. In this embodiment, the black matrix 4 uses negative photoresist.

[0118] Correspondingly, the retaining wall 304 uses positive photoresist.

[0119] The material of the black matrix 4 includes chromium, chromium oxide or black resin.

[0120] The black matrix 4 is located on the side of the partial light-emitting device layer 2 away from the substrate 1, that is, the black matrix 4 is arranged at intervals in some areas of the display area 102. Specifically, it includes the transition area between adjacent sub-pixels, but cannot directly block the light-emitting sub-pixels, and the sub-pixels are located between adjacent black matrices 4.

[0121] In some embodiments of the present application, after the step of removing the sacrificial layer 3, it includes:

[0122] A packaging layer 6 is prepared on one side of the substrate 1, and the packaging layer 6 covers the transparent area 101 of the substrate 1, the light-emitting device layer 2 and the black matrix 4.

[0123] After the step of removing the sacrificial layer 3 and before the step of preparing the packaging layer 6, in this embodiment, it further includes preparing light-emitting diodes 5 in the areas of the display area 102 not covered by the black matrix 4. Specifically, it includes small light-emitting diodes 5 (micro-LED) or micro light-emitting diodes 5 (mini-LED).

[0124] In order to prevent the light-emitting diodes 5 and the light-emitting device layer 2 from being eroded by water and oxygen and changing their properties, a packaging layer 6 is prepared on the side of the substrate 1 close to the light-emitting device layer 2, and the packaging layer 6 covers the transparent area 101 of the substrate 1, the light-emitting device layer 2 and the black matrix 4.

[0125] The embodiments of the present application provide an extended method for a method of manufacturing a transparent display panel, such asFigure 3 and Figures 4A - 4G as shown Figure 3 is a schematic flow chart of a method for manufacturing a transparent display panel according to another embodiment of the present application; Figures 4A - 4G is a schematic step-by-step diagram of a method for manufacturing a transparent display panel according to another embodiment of the present application. The manufacturing method includes the following steps:

[0126] S201. Provide a substrate 1, where the substrate 1 has a display area 102 and a transparent area 101;

[0127] S202. Fabricate a light-emitting device layer 2 in the display area 102 of the substrate 1;

[0128] Optionally, the light-emitting device layer 2 includes: a buffer layer, a first gate insulating layer, a second gate insulating layer, an interlayer dielectric layer, a first planarization layer, a first passivation layer, a second passivation layer, and a second planarization layer, which are stacked in sequence from bottom to top. The light-emitting device layer 2 further includes: a semiconductor layer, a first gate layer, a second gate layer, a data layer, and a source-drain layer, which are stacked in sequence from bottom to top.

[0129] S203. Remove the film layer in the transparent area 101 of the substrate 1; as Figure 4A shown

[0130] S204. Fabricate a conductive seed layer 31 on one side of the substrate 1. The conductive seed layer 31 includes a first conductive seed layer 301 covering the light-emitting device layer 2 and a second conductive seed layer 302 covering the transparent area 101 of the substrate 1; as Figure 4B shown

[0131] S205. Fabricate a barrier wall 304 on the side of the first conductive seed layer 301 away from the substrate 1; as Figure 4C shown

[0132] S206. Fabricate a conductive growth layer 303 on the side of the second conductive seed layer 302 away from the substrate 1. The second conductive seed layer 302 and the conductive growth layer 303 form the sacrificial layer 3; as Figure 4D shown

[0133] S207. Remove the barrier wall 304; as Figure 4E shown

[0134] S208. Fabricate the light-shielding material on the side of both the first conductive seed layer 301 and the sacrificial layer 3 away from the substrate 1;

[0135] S209. Pattern the light-shielding material layer to form a black matrix 4, where the black matrix 4 is located on the side of a part of the light-emitting device layer 2 away from the substrate 1; as Figure 4F shown

[0136] S210. Remove the sacrificial layer 3, as Figure 4G shown.

[0137] Optionally, simultaneously remove the portion of the first conductive seed layer 301 that is not covered by the black matrix 4.

[0138] S211. Fabricate a light-emitting diode 5 in the area of the display region 102 that is not covered by the black matrix 4;

[0139] S212. Fabricate a packaging layer 6 on the side of the substrate 1 close to the light-emitting device layer 2, and the packaging layer 6 covers the transparent region 101 of the substrate 1, the light-emitting device layer 2, and the black matrix 4. As Figure 1 shown.

[0140] The embodiment of the present application provides an extended method for preparing another transparent display panel, as Figure 5 and Figures 6A - 6E shown, Figure 5 which is a schematic flow diagram of the method for preparing a transparent display panel in another embodiment of the present application; Figures 6A - 6E which is a schematic step-by-step diagram of the method for preparing a transparent display panel in another embodiment of the present application. The preparation method includes the following steps:

[0141] S301. Provide a substrate 1, and the substrate 1 has a display region 102 and a transparent region 101;

[0142] S302. Fabricate a light-emitting device layer 2 in the display region 102 of the substrate 1;

[0143] Optionally, the light-emitting device layer 2 includes: a buffer layer, a first gate insulating layer, a second gate insulating layer, an interlayer dielectric layer, a first planarization layer, a first passivation layer, a second passivation layer, and a second planarization layer that are stacked in sequence from bottom to top. The light-emitting device layer 2 further includes: a semiconductor layer, a first gate layer, a second gate layer, a data layer, and a source-drain layer that are stacked in sequence from bottom to top.

[0144] S303. Remove the film layer of the transparent region 101 of the substrate 1;

[0145] S304. Fabricate a conductive seed layer 31 on one side of the substrate 1, and the conductive seed layer 31 includes a first conductive seed layer 301 covering the light-emitting device layer 2 and a second conductive seed layer 302 covering the transparent region 101 of the substrate 1;

[0146] S305. Fabricate a barrier wall 304 on the side of the first conductive seed layer 301 away from the substrate 1;

[0147] S306. Prepare a conductive growth layer 303 on the side of the second conductive seed layer 302 away from the substrate 1. The second conductive seed layer 302 and the conductive growth layer 303 form the sacrificial layer 3;

[0148] S307. Remove the barrier wall 304 and the first conductive seed layer 301; as Figure 6A and 6B shown.

[0149] S308. Prepare the light-shielding material on the side of both the light-emitting device layer 2 and the sacrificial layer 3 away from the substrate 1;

[0150] S309. Pattern the light-shielding material layer to form a black matrix 4, and the black matrix 4 is located on the side of a part of the light-emitting device layer 2 away from the substrate 1; as Figure 6C shown.

[0151] S310. Remove the sacrificial layer 3. As Figure 6D shown.

[0152] S311. Prepare a light-emitting diode 5 in the area of the display region 102 not covered by the black matrix 4;

[0153] S312. Prepare a packaging layer 6 on the side of the substrate 1 close to the light-emitting device layer 2, and the packaging layer 6 covers the transparent region 101 of the substrate 1, the light-emitting device layer 2, and the black matrix 4. As Figure 6E shown.

[0154] Applying the embodiments of the present application can at least achieve the following beneficial effects: By directly covering the packaging layer on the transparent region of the substrate, the transmittance of the transparent region is increased, the haze is reduced, and the sacrificial layer is prepared and removed in the transparent region of the substrate, so that in the step of preparing the black matrix, the step difference between the transparent region and the display region becomes smaller or flush, thereby avoiding defects such as residue at the bottom of the step difference and thinning of the thickness at the top of the step difference of the black matrix, improving the light-shielding ability of the display region, and further improving the transmittance and display effect of the transparent display panel at the same time.

[0155] Those skilled in the art of the present technology can understand that the steps, measures, and solutions in the various operations, methods, and processes discussed in the present application can be alternated, changed, combined, or deleted. Further, other steps, measures, and solutions in the various operations, methods, and processes discussed in the present application can also be alternated, changed, rearranged, decomposed, combined, or deleted. Further, those in the prior art having steps, measures, and solutions in the various operations, methods, and processes disclosed in the present application can also be alternated, changed, rearranged, decomposed, combined, or deleted.

[0156] In the description of the present application, it should be understood that the orientation or positional relationships indicated by the terms "center", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc. are based on the orientation or positional relationships shown in the drawings, and are only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be construed as a limitation to the present application.

[0157] The terms "first" and "second" are only used for descriptive purposes, and cannot be construed as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, the features defined with "first" and "second" may explicitly or implicitly include one or more of such features. In the description of the present application, unless otherwise specified, the meaning of "a plurality" is two or more.

[0158] In the description of the present application, it should be noted that unless otherwise clearly specified and limited, the terms "installed", "connected" and "coupled" should be understood in a broad sense. For example, it may be a fixed connection, a detachable connection, or an integral connection; it may be directly connected, or indirectly connected through an intermediate medium, and it may be the communication inside two elements. For those of ordinary skill in the art, the specific meanings of the above terms in the present application can be understood according to specific circumstances.

[0159] In the description of this specification, specific features, structures, materials, or characteristics may be combined in a suitable manner in any one or more embodiments or examples.

[0160] It should be understood that although the steps in the flowchart of the drawings are shown in sequence according to the indication of the arrows, these steps are not necessarily executed in the sequence indicated by the arrows. Unless otherwise clearly stated in this application, the execution of these steps is not strictly limited in order, and they may be executed in other orders. Moreover, at least a part of the steps in the flowchart of the drawings may include multiple sub-steps or multiple stages. These sub-steps or stages are not necessarily executed at the same moment, but may be executed at different moments, and their execution order is not necessarily sequential, but may be executed alternately or in turn with at least a part of other steps or sub-steps or stages of other steps.

[0161] The above are only some embodiments of the present application. It should be noted that for those of ordinary skill in the art, without departing from the principle of the present application, several improvements and refinements can be made, and these improvements and refinements should also be regarded as the protection scope of the present application.

Claims

1. A method for preparing a transparent display panel, characterized in that, Comprising: Providing a substrate having a display region and a transparent region; Preparing a light-emitting device layer in the display region of the substrate; Preparing a sacrificial layer in the transparent region of the substrate; Preparing a light-shielding material layer on a side of both the light-emitting device layer and the sacrificial layer away from the substrate; Patterning the light-shielding material layer to form a black matrix, the black matrix being located on a side of a part of the light-emitting device layer away from the substrate; Removing the sacrificial layer; The step of preparing the sacrificial layer in the transparent region of the substrate includes: Preparing a conductive seed layer on one side of the substrate, the conductive seed layer including a first conductive seed layer disposed on the light-emitting device layer and a second conductive seed layer disposed on the transparent region of the substrate; Preparing a barrier wall on a side of the first conductive seed layer away from the substrate; Preparing a conductive growth layer on a side of the second conductive seed layer away from the substrate, the second conductive seed layer and the conductive growth layer forming the sacrificial layer.

2. The manufacturing method of the transparent display panel according to claim 1, characterized in that, Preparing the conductive growth layer in the transparent region of the substrate such that an upper surface height of the conductive growth layer is not less than 1 / 2 of an upper surface height of the first conductive seed layer and not greater than 3 / 2 of the upper surface height of the first conductive seed layer.

3. The manufacturing method of the transparent display panel according to claim 2, wherein, The step of preparing the light-shielding material on a side of both the light-emitting device layer and the sacrificial layer away from the substrate includes: Removing the barrier wall; Preparing the light-shielding material on a side of both the first conductive seed layer and the sacrificial layer away from the substrate.

4. The manufacturing method of the transparent display panel according to claim 1, characterized in that, Preparing the conductive growth layer in the transparent region of the substrate such that an upper surface height of the conductive growth layer is not less than 1 / 2 of an upper surface height of the light-emitting device layer and not greater than 3 / 2 of the upper surface height of the light-emitting device layer.

5. The preparation method of the transparent display panel according to claim 4, characterized in that, The step of preparing the light-shielding material on a side of both the light-emitting device layer and the sacrificial layer away from the substrate includes: Removing the barrier wall and the first conductive seed layer; Preparing the light-shielding material on a side of both the light-emitting device layer and the sacrificial layer away from the substrate.

6. The manufacturing method of the transparent display panel according to claim 1, characterized in that, The step of preparing the conductive growth layer on a side of the second conductive seed layer away from the substrate includes: Preparing a metal layer on a side of the second conductive seed layer away from the substrate, the metal layer forming the conductive growth layer, the metal layer including at least one of copper, nickel, gold, palladium nickel, tin lead, and silver.

7. The manufacturing method of the transparent display panel according to claim 1, characterized in that, The step of preparing the barrier wall on a side of the first conductive seed layer away from the substrate includes: Coating a positive photoresist on a side of both the first conductive seed layer and the second conductive seed layer away from the substrate to form a barrier wall material layer; Patterning the barrier wall material layer to expose the second conductive seed, obtaining the barrier wall located on a side of the first conductive seed layer away from the substrate.

8. The manufacturing method of the transparent display panel according to claim 1, wherein, The step of preparing the light-shielding material on a side of both the light-emitting device layer and the sacrificial layer away from the substrate includes: Coating a negative photoresist on a side of both the light-emitting device layer and the sacrificial layer away from the substrate to form a light-shielding material layer.

9. The manufacturing method of the transparent display panel according to claim 1, wherein, After the step of removing the sacrificial layer includes: Preparing a packaging layer on one side of the substrate, the packaging layer covering the transparent region of the substrate, the light-emitting device layer, and the black matrix.

10. A transparent display panel, characterized in that, Manufactured by using the manufacturing method described in any one of claims 1-9, the transparent display panel includes: A substrate having a transparent region and a display region; A light-emitting device layer disposed on the display region on one side of the substrate; A black matrix spaced apart on the side of the light-emitting device layer away from the substrate; A packaging layer, a part of the packaging layer is disposed on the transparent region of the substrate, and another part of the packaging layer is disposed on the light-emitting device layer and the black matrix.

11. The transparent display panel according to claim 10, wherein The transparent display panel further includes a first conductive seed layer located between the black matrix and the light-emitting device layer.

12. The transparent display panel according to claim 11, wherein The orthographic projection of the black matrix on the substrate covers the orthographic projection of the first conductive seed layer on the substrate.

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