Perovskite solar cells and their fabrication methods

Abstract

This invention discloses a perovskite solar cell and its fabrication method. The perovskite solar cell includes a conductive glass substrate and a non-metallic electrode disposed on the surface of the substrate; a perovskite light-absorbing layer disposed on the side of the non-metallic electrode away from the glass substrate; a first electron transport layer disposed on the side of the perovskite light-absorbing layer away from the conductive glass; and a metal electrode disposed on the side of the first electron transport layer away from the conductive glass. The first electron transport layer is made of a metal oxide doped with a metal element, the metal oxide including at least one of SnO2, WO3, TiO2, ZnO, ZTO, MZO, and Nb2O5, and the metal element including at least one of W, Mo, Nb, Mn, and Y. Doping the metal oxide with a metal element can effectively improve the electron mobility of the electron transport layer, effectively reduce hysteresis, and improve the photoelectric conversion efficiency and stability of the cell.

Description

Technical Field

[0001] This invention relates to the field of perovskite solar cells, and more specifically, to perovskite solar cells and their fabrication methods. Background Technology

[0002] Due to its low binding energy, tunable direct bandgap of 1.2 eV–1.6 eV, long carrier lifetime, and long diffusion length, perovskite has become a highly anticipated material in optoelectronic devices, including solar cells. Perovskite solar cells are relatively simple to fabricate and have low cost. Furthermore, they exhibit high photoelectric conversion efficiency, leading many researchers to consider them promising new types of solar cells, comparable to commercially available crystalline silicon and CdTe cells.

[0003] The stability of perovskite solar cells has long been criticized, and they exhibit a significant hysteresis effect. The most commonly used electron transport layer for inverted perovskite solar cells is fullerene and its derivatives. However, these materials are expensive, have poor long-term stability in water and oxygen, and have limited preparation methods, making them unsuitable for industrial production.

[0004] Therefore, current perovskite solar cells and their fabrication methods still need improvement. Summary of the Invention

[0005] The present invention aims to at least alleviate or resolve at least one of the aforementioned problems to some extent.

[0006] In one aspect of the present invention, a perovskite solar cell is provided, the perovskite solar cell comprising: a conductive glass, the conductive glass including a glass substrate and a non-metallic electrode disposed on the surface of the glass substrate; a perovskite light-absorbing layer disposed on the side of the non-metallic electrode away from the glass substrate; a first electron transport layer disposed on the side of the perovskite light-absorbing layer away from the conductive glass; and a metal electrode disposed on the side of the first electron transport layer away from the conductive glass; wherein the first electron transport layer is made of a metal oxide doped with a metal element, the metal oxide including at least one of SnO2, WO3, TiO2, ZnO, ZTO, MZO, and Nb2O5, and the metal element including at least one of W, Mo, Nb, Mn, and Y. Therefore, by doping metal elements into metal oxides, the electron mobility of the first electron transport layer can be effectively improved, resulting in good bandgap matching between the metal oxide and the perovskite light-absorbing layer. The conduction band position of the metal oxide can also be adjusted to lower the electron transport barrier, reduce the recombination of electrons and holes at the interface between the electron transport layer and the light-absorbing layer, effectively reduce hysteresis, and thus improve the photoelectric conversion efficiency and stability of the battery. The first electron transport layer is formed of inorganic materials, which has good stability and low cost, making it conducive to large-scale production.

[0007] According to an embodiment of the present invention, the mass percentage of the metal element is 5 wt% to 20 wt% based on the total mass of the first electron transport layer. This is beneficial for further improving the electron mobility of the first electron transport layer and for better band matching between the first electron transport layer and the light-absorbing layer, thereby further improving the photoelectric conversion efficiency of the battery.

[0008] According to embodiments of the present invention, the perovskite solar cell satisfies at least one of the following conditions: the non-metallic electrode is made of FTO or ITO; the thickness of the perovskite light-absorbing layer is 500nm-600nm; the thickness of the first electron transport layer is 10nm-30nm; the metallic electrode is made of Au, Al, or Cu; and the thickness of the metallic electrode is 80nm-90nm. This is beneficial for further improving the overall performance of the cell.

[0009] According to an embodiment of the present invention, the perovskite solar cell further comprises: a hole transport layer disposed between the non-metallic electrode and the perovskite light-absorbing layer, wherein the hole transport layer is made of Cu2O, CuI, or nickel oxide; and a second electron transport layer disposed between the first electron transport layer and the metal electrode, wherein the material of the second electron transport layer includes at least one of SnO2, WO3, TiO2, ZnO, ZTO, MZO, and Nb2O5. This is beneficial for further improving the overall performance of the cell.

[0010] According to an embodiment of the present invention, the perovskite solar cell satisfies at least one of the following conditions: the thickness of the hole transport layer is 20 nm-30 nm; and the thickness of the second electron transport layer is 10 nm-20 nm. This is beneficial for further improving the photoelectric conversion efficiency of the cell.

[0011] In another aspect of the present invention, a method for preparing the aforementioned perovskite solar cell is provided. The method includes: providing a conductive glass comprising a glass substrate and a non-metallic electrode disposed on the surface of the glass substrate; forming a perovskite light-absorbing layer on the side of the non-metallic electrode away from the glass substrate; forming a first electron transport layer on the side of the perovskite light-absorbing layer away from the conductive glass, wherein the first electron transport layer is formed by electron beam deposition, thermal evaporation, or magnetron sputtering deposition of a metal oxide doped with a metal element, or by simultaneously depositing a metal element and a metal oxide using one or both of electron beam deposition, thermal evaporation, or magnetron sputtering; and forming a metal electrode on the side of the first electron transport layer away from the conductive glass. Therefore, the perovskite solar cell prepared using the above method possesses all the characteristics and advantages of the aforementioned perovskite solar cell, which will not be repeated here. Using the above method to prepare perovskite solar cells is beneficial for improving product yield and reducing production costs, and can be used for the large-scale production of perovskite solar cells.

[0012] According to an embodiment of the present invention, the first electron transport layer is formed by depositing a metal oxide doped with a metal element, and the deposition rate of the first electron transport layer is [missing information].

[0013] According to an embodiment of the present invention, the first electron transport layer is formed by simultaneously depositing a metal element and a metal oxide using one or two of electron beam deposition, thermal evaporation, or magnetron sputtering, wherein the deposition rate of the metal element is [missing information]. The deposition rate of the metal oxide is

[0014] According to an embodiment of the present invention, the first electron transport layer is formed by magnetron sputtering, and the power of magnetron sputtering is 60W-100W.

[0015] According to an embodiment of the present invention, before forming the perovskite light-absorbing layer, a hole transport layer is formed on the side of the non-metallic electrode away from the glass substrate; and before forming the metallic electrode, a second electron transport layer is formed on the side of the first electron transport layer away from the conductive glass. This is beneficial for further improving the overall performance of the perovskite solar cell. Attached Figure Description

[0016] The above and / or additional aspects and advantages of the present invention will become apparent and readily understood from the description of the embodiments taken in conjunction with the following drawings, in which:

[0017] Figure 1 A schematic diagram of a perovskite solar cell according to an embodiment of the present invention is shown;

[0018] Figure 2 A schematic diagram of a perovskite solar cell structure according to another embodiment of the present invention is shown;

[0019] Figure 3 A flowchart of a method for fabricating a perovskite solar cell according to an embodiment of the present invention is shown;

[0020] Figure 4 The results of the hysteresis effect (hysteresis factor) test of the perovskite solar cell samples of Examples 1-3 and Comparative Example 1 are shown.

[0021] Figure 5 The photoelectric conversion efficiency test results of the perovskite solar cell samples of Examples 1-3 and Comparative Example 1 are shown;

[0022] Figure 6 The photoelectric conversion efficiency test results of the perovskite solar cell samples of Examples 1, 4-6 and Comparative Example 1 are shown.

[0023] Figure 7 The photoelectric conversion efficiency test results of the perovskite solar cell samples of Examples 7-9 and Comparative Example 1 are shown;

[0024] Figure 8 The curves showing the photoelectric conversion efficiency of the perovskite solar cell samples of Examples 1-3 and Comparative Example 1 as a function of time under high temperature and high humidity test conditions are displayed.

[0025] Figure 9 The curves showing the photoelectric conversion efficiency of the perovskite solar cell samples of Examples 1-3 and Comparative Example 1 as a function of time under simulated sunlight test conditions are displayed.

[0026] Explanation of reference numerals in the attached figures:

[0027] 100: Conductive glass; 110: Glass substrate; 120: Non-metallic electrode; 200: Perovskite light-absorbing layer; 300: First electron transport layer; 400: Metallic electrode; 500: Hole transport layer; 600: Second electron transport layer. Detailed Implementation

[0028] Embodiments of the present invention are described in detail below. Examples of these embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present invention, and should not be construed as limiting the present invention.

[0029] In one aspect of the invention, a perovskite solar cell is provided. According to an embodiment of the invention, reference is made to... Figure 1 A perovskite solar cell may include a conductive glass 100, a perovskite light-absorbing layer 200, a first electron transport layer 300, and a metal electrode 400. The conductive glass 100 includes a glass substrate 110 and a non-metallic electrode 120 disposed on the surface of the glass substrate 110. The perovskite light-absorbing layer 200 is disposed on the side of the non-metallic electrode 120 away from the glass substrate 110. The first electron transport layer 300 is disposed on the side of the perovskite light-absorbing layer 200 away from the conductive glass 100. The metal electrode 400 is disposed on the side of the first electron transport layer 300 away from the conductive glass 100. The first electron transport layer 300 is made of a metal oxide doped with a metal element, including at least one of SnO2, WO3, TiO2, ZnO, ZTO, MZO, and Nb2O5, and the metal element including at least one of W, Mo, Nb, Mn, and Y. Therefore, this perovskite solar cell effectively improves the electron mobility of the first electron transport layer, reduces electron transport resistance, and increases the short-circuit current by doping the metal oxide with metal elements. Doping with metal elements shifts the conduction band of the metal oxide, resulting in good band matching between the first electron transport layer material and the light-absorbing layer. This allows for the construction of a larger built-in electric field, reducing the electron barrier height and increasing the open-circuit voltage of the cell. Metal doping of the metal oxide also reduces electron-hole recombination at the interface between the first electron transport layer and the light-absorbing layer, effectively reducing hysteresis and improving the photoelectric conversion efficiency of the cell. Furthermore, the first electron transport layer is formed from inorganic materials, exhibiting good stability and low cost, which is beneficial for improving the stability of the cell and facilitating the large-scale production of perovskite solar cells.

[0030] It should be noted that the metal oxide includes at least one of SnO2, WO3, TiO2, ZnO, ZTO (zinc tin oxide), MZO (magnesium-doped zinc oxide), and Nb2O5, meaning that the metal oxide can be SnO2, WO3, TiO2, ZnO, ZTO, MZO, or Nb2O5, or the metal oxide can be composed of two or more of SnO2, WO3, TiO2, ZnO, ZTO, MZO, and Nb2O5. The metallic element includes at least one of W, Mo, Nb, Mn, and Y, meaning that the metallic element can be W, Mo, Nb, Mn, or Y, or the metallic element can be composed of two or more of W, Mo, Nb, Mn, and Y.

[0031] According to an embodiment of the present invention, based on the total mass of the first electron transport layer 300, the mass percentage of the metal element is 5wt% to 20wt%, for example, 5wt%, 8wt%, 10wt%, 13wt%, 15wt%, 18wt%, 20wt%, etc. The content of the metal element is set within the above range, which can effectively modify the metal oxide, making the first electron transport layer have a higher electron mobility and a higher degree of matching between the energy band of the first electron transport layer and the energy band of the light-absorbing layer, thereby reducing the electron barrier height, further improving the electron transport rate, reducing the recombination of electrons and holes at the interface between the electron transport layer and the light-absorbing layer, thereby further improving the photoelectric conversion efficiency of the battery; it can also further improve the stability of the battery.

[0032] According to an embodiment of the present invention, the thickness of the first electron transport layer 300 can be 10nm-30nm, for example, 10nm, 15nm, 20nm, 25nm, 30nm, etc. Thus, the first electron transport layer has a suitable thickness, which is beneficial to further improve the performance of the electron transport layer.

[0033] The specific composition of the glass substrate 110 is not particularly limited in this invention, as long as the glass substrate has good flatness and support performance.

[0034] According to an embodiment of the present invention, the non-metallic electrode 120 can be made of fluorine-doped tin oxide (FTO) or indium tin oxide (ITO). Thus, the non-metallic electrode has good conductivity and is a transparent material, which is beneficial to improving the overall performance of the perovskite solar cell.

[0035] According to an embodiment of the present invention, the perovskite light-absorbing layer 200 can be an ABX3 type perovskite material, wherein A is a monovalent cation, specifically, A can be CS. + MA + FA + 、Rb+ In this case, B is a divalent metal cation; specifically, B can be Pb. 2+ Sn 2+ In this context, X is a monovalent anion; specifically, X can be Cl-, Br-, etc. - I - 、(SCN)- etc.

[0036] According to an embodiment of the present invention, the thickness of the perovskite light-absorbing layer can be 500nm-600nm, for example, 500nm, 530nm, 550nm, 580nm, 600nm, etc. Therefore, the perovskite light-absorbing layer has a suitable thickness, which is beneficial to further improve the photoelectric conversion efficiency of the perovskite solar cell.

[0037] According to embodiments of the present invention, the metal electrode can be made of Au, Al, or Cu, thereby giving the metal electrode excellent conductivity, which is beneficial for further improving the performance of perovskite solar cells.

[0038] According to an embodiment of the present invention, the thickness of the metal electrode can be 80nm-90nm, for example, 80nm, 82nm, 85nm, 87nm, 90nm, etc. Therefore, the metal electrode has good light absorption, low resistance, and is not easy to break the circuit, which can improve the utilization rate of light by the battery, and thus help to further improve the performance of perovskite solar cells.

[0039] According to some embodiments of the present invention, the perovskite solar cell may further include a second electron transport layer 600, as referenced. Figure 2 A second electron transport layer 600 is disposed between the first electron transport layer 300 and the metal electrode 400. The material of the second electron transport layer 600 may include at least one of SnO2, WO3, TiO2, ZnO, ZTO, MZO, and Nb2O5. That is, the material of the second electron transport layer 600 may be SnO2, WO3, TiO2, ZnO, ZTO, MZO, or Nb2O5, or the second electron transport layer 600 may be composed of two or more of SnO2, WO3, TiO2, ZnO, ZTO, MZO, and Nb2O5. Therefore, the second electron transport layer formed by the above-mentioned materials has good electron mobility and can form good ohmic contact with the metal electrode, thereby further promoting electron transport to the metal electrode. According to some specific embodiments of the present invention, the thickness of the second electron transport layer 600 can be 10nm-20nm, for example, 10nm, 12nm, 15nm, 17nm, 20nm, etc., which is beneficial to further improve the overall performance of the battery.

[0040] According to other embodiments of the present invention, the perovskite solar cell may further include a hole transport layer 500, as shown in the reference. Figure 2 The hole transport layer 500 is disposed between the non-metallic electrode 120 and the perovskite light-absorbing layer 200. The hole transport layer 500 can be made of Cu2O, CuI or nickel oxide, which allows the hole transport rate to be more matched with the electron transport rate, thereby further improving the photoelectric conversion efficiency of the perovskite solar cell. Moreover, the above materials are all inorganic, low in cost and with good stability.

[0041] According to some embodiments of the present invention, the thickness of the hole transport layer 500 can be 20nm-30nm, for example, 20nm, 23nm, 25nm, 27nm, 30nm, etc. Thus, by setting the thickness of the hole transport layer within the above range, the matching degree of the transport rates of holes and electrons can be further improved, thereby improving the photoelectric conversion efficiency of the perovskite solar cell.

[0042] In summary, the perovskite solar cell proposed in this invention uses metal oxide as the main material of the first electron transport layer and doespes it with metal materials, which significantly improves the electron mobility of the metal oxide film. It also makes the energy bands of the metal oxide and the perovskite light-absorbing layer more matched, adjusts the conduction band position of the metal oxide, lowers the electron transport barrier, reduces the recombination of electrons and holes at the interface between the electron transport layer and the light-absorbing layer, improves the photoelectric conversion efficiency of the perovskite solar cell, and reduces interface defects. In addition, the electron transport layer formed by inorganic materials has good stability, which is beneficial to improving the overall stability of the perovskite solar cell.

[0043] In another aspect of the invention, a method for fabricating the aforementioned perovskite solar cell is provided, referring to... Figure 3 The method for preparing the aforementioned perovskite solar cell may include the following steps:

[0044] S100: Provides conductive glass.

[0045] In this step, conductive glass 100 is provided. The conductive glass 100 includes a glass substrate 110 and a non-metallic electrode 120 disposed on the surface of the glass substrate 110. The material of the non-metallic electrode has been described in detail above and will not be repeated here.

[0046] According to some embodiments of the present invention, before forming other layer structures on the conductive glass, the conductive glass can be cleaned to remove impurities such as organic matter and dust that may exist on the surface of the conductive glass.

[0047] S200: A perovskite light-absorbing layer is formed on the side of the non-metallic electrode away from the glass substrate.

[0048] After providing the conductive glass, a perovskite light-absorbing layer 200 is formed on the side of the non-metallic electrode 120 away from the glass substrate 110. The method for forming the perovskite light-absorbing layer is not particularly limited in this invention; those skilled in the art can select and set the method according to actual needs, as long as a perovskite light-absorbing layer with good performance can be formed. According to some embodiments of the present invention, the perovskite light-absorbing layer can be formed by solution spin coating, thereby forming a smooth and uniform perovskite light-absorbing layer. Furthermore, the preparation process is mature and beneficial to improving product yield.

[0049] According to some embodiments of the present invention, before forming the perovskite light-absorbing layer 200, a hole transport layer 500 can be formed on the side of the non-metallic electrode 120 away from the glass substrate 110 to further improve the hole transport rate. The material and thickness of the hole transport layer 500 have been described in detail above and will not be repeated here.

[0050] According to some embodiments of the present invention, a hole transport layer can be formed by magnetron sputtering, which can effectively control the film thickness and obtain a uniform film structure.

[0051] S300: A first electron transport layer is formed on the side of the perovskite light-absorbing layer away from the conductive glass.

[0052] After forming the perovskite light-absorbing layer 200, a first electron transport layer 300 is formed on the side of the perovskite light-absorbing layer 200 away from the conductive glass 100. The first electron transport layer 300 is made of a metal oxide doped with a metal element. The metal oxide includes at least one of SnO2, WO3, TiO2, ZnO, ZTO, MZO, and Nb2O5, and the metal element includes at least one of W, Mo, Nb, Mn, and Y. The mass percentage of the metal element has been explained above and will not be repeated here.

[0053] According to some embodiments of the present invention, the first electron transport layer can be formed by electron beam deposition, thermal evaporation, or magnetron sputtering of a metal oxide doped with a metal element. Specifically, the metal oxide is first doped with a certain amount of metal element, and then the metal oxide doped with the metal element is directly deposited to obtain the first electron transport layer. Using the above methods, a film structure with uniform thickness and material can be formed, and the first electron transport layer has a large electron mobility, which is beneficial for improving the efficiency and stability of the battery.

[0054] According to some specific embodiments of the present invention, the first electron transport layer is formed by depositing a metal oxide doped with a metal element, wherein the deposition rate of the first electron transport layer is... For example, it can be... This facilitates the production of a first electron transport layer with consistent thickness and uniform material, thereby improving the overall performance of the battery.

[0055] According to some specific embodiments of the present invention, a first electron transport layer can be formed by magnetron sputtering. Specifically, the magnetron sputtering power is 60W-100W, for example, the magnetron sputtering power can be 60W, 70W, 80W, 90W, 100W, etc. By sputtering and depositing the first electron transport layer with the above power, a film structure with uniform material and consistent thickness can be obtained, thereby improving the overall performance of the battery.

[0056] According to some embodiments of the present invention, the first electron transport layer may be formed by simultaneously depositing a metal element and a metal oxide using one or both of electron beam deposition, thermal evaporation, or magnetron sputtering. According to some embodiments of the present invention, the first electron transport layer can be formed using a co-evaporation method; specifically, an evaporation boat can be used to evaporate the metal element, and the deposition rate of the metal element is... (for example, it can be) (etc.), metal oxides were deposited using electron beam deposition, and the deposition rate of the metal oxides was... (for example, it can be) By adjusting and controlling the deposition rates of metal elements and metal oxides, the desired doping level can be achieved. According to other embodiments of the present invention, electron beam deposition, thermal evaporation, or magnetron sputtering can also be used to simultaneously deposit metal elements and metal oxides to achieve doping of the metal oxide and preparation of the first electron transport layer.

[0057] S400: A metal electrode is formed on the side of the first electron transport layer away from the conductive glass.

[0058] In this step, a metal electrode 400 is formed on the side of the first electron transport layer 300 away from the conductive glass 100. According to some embodiments of the present invention, the metal electrode can be formed by thermal evaporation. The specific material and thickness of the metal electrode have been described above and will not be repeated here.

[0059] According to some embodiments of the present invention, after the formation of the first electron transport layer 300 and before the formation of the metal electrode 400, a second electron transport layer 600 may be formed on the side of the first electron transport layer 300 away from the conductive glass 100, and the metal electrode is formed on the surface of the second electron transport layer 600 away from the conductive glass 100, so that a good ohmic contact is formed between the second electron transport layer 600 and the metal electrode 400, thereby promoting the transport of electrons to the metal electrode.

[0060] In summary, the method for preparing perovskite solar cells proposed in this invention can produce perovskite solar cells with high electron mobility, high photoelectric conversion efficiency, and good stability. Furthermore, this method can significantly reduce the production cost of perovskite solar cells, improve product yield, and realize the large-scale production of perovskite solar cells.

[0061] The present invention will be described below through specific embodiments. Those skilled in the art will understand that the specific embodiments below are merely illustrative and do not limit the scope of the invention in any way. Furthermore, in the following embodiments, unless otherwise specified, the materials and equipment used are commercially available. If specific processing conditions and methods are not explicitly described in the later embodiments, conditions and methods known in the art can be used for processing.

[0062] Example 1

[0063] A conductive glass is provided and cleaned to remove impurities from its surface. The conductive glass includes a glass substrate and a non-metallic electrode disposed on the surface of the glass substrate. The non-metallic electrode is made of FTO. A 20 nm thick nickel oxide layer is deposited on the side of the non-metallic electrode away from the glass substrate using magnetron sputtering to obtain a hole transport layer. A perovskite light-absorbing layer solution is spin-coated onto the side of the hole transport layer away from the conductive glass using a solution method. After annealing, a perovskite light-absorbing layer of FAPbI3 material with a thickness of 500 nm is obtained. After forming the perovskite light-absorbing layer, Mo-doped WO3 is deposited using electron beam deposition at a deposition rate of [missing information]. A first electron transport layer with a thickness of 10 nm was obtained (based on the total mass of the first electron transport layer, the mass percentage of the metal element Mo is 5 wt%). ZTO was deposited on the side of the first electron transport layer away from the conductive glass using electron beam deposition at a deposition rate of [missing information]. A second electron transport layer with a thickness of 20 nm was obtained; a Cu metal electrode with a thickness of 80 nm was deposited on the side of the second electron transport layer away from the conductive glass by thermal evaporation, thus completing the preparation of the perovskite solar cell sample.

[0064] Example 2

[0065] Unlike Example 1, the first electron transport layer and the second electron transport layer are formed by thermal evaporation.

[0066] Example 3

[0067] Unlike Example 1, the first electron transport layer and the second electron transport layer are formed by magnetron sputtering, wherein the power of radio frequency magnetron sputtering is 60W.

[0068] Example 4

[0069] Unlike Example 1, after forming the perovskite light-absorbing layer, Mo-doped WO3 was deposited using electron beam deposition to obtain a first electron transport layer with a thickness of 10 nm. Based on the total mass of the first electron transport layer, the mass percentage of the metal element Mo was 10 wt%.

[0070] Example 5

[0071] Unlike Example 1, after forming the perovskite light-absorbing layer, Mo-doped WO3 was deposited using electron beam deposition to obtain a first electron transport layer with a thickness of 10 nm. Based on the total mass of the first electron transport layer, the mass percentage of the metal element Mo was 15 wt%.

[0072] Example 6

[0073] Unlike Example 1, after forming the perovskite light-absorbing layer, Mo-doped WO3 was deposited using electron beam deposition to obtain a first electron transport layer with a thickness of 10 nm. Based on the total mass of the first electron transport layer, the mass percentage of the metal element Mo was 20 wt%.

[0074] Example 7

[0075] Unlike Example 1, after forming the perovskite light-absorbing layer, a co-evaporation method was used to deposit the first electron transport layer, and a metal Mo was evaporated using an evaporation boat (deposition rate of ). ), using electron beam deposition of WO3 (deposition rate of ), A first electron transport layer with a thickness of 10 nm was obtained, and the mass percentage of the metal element Mo based on the total mass of the first electron transport layer was 10 wt%.

[0076] Example 8

[0077] Unlike Example 1, after forming the perovskite light-absorbing layer, a co-evaporation method was used to deposit the first electron transport layer, and a metal Nb was evaporated using an evaporation boat (deposition rate of ). Electron beam deposition of SnO2 was performed (deposition rate was...). A first electron transport layer with a thickness of 10 nm was obtained, and the mass percentage of the metal element Nb based on the total mass of the first electron transport layer was 10 wt%.

[0078] Example 9

[0079] Unlike Example 1, after forming the perovskite light-absorbing layer, a first electron transport layer was deposited using a co-evaporation method, and metal Y was evaporated using an evaporation boat (deposition rate of ). ), using electron beam deposition of WO3 (deposition rate of ), A first electron transport layer with a thickness of 10 nm was obtained, and the mass percentage of the metal element Y based on the total mass of the first electron transport layer was 10 wt%.

[0080] Comparative Example 1

[0081] Unlike Example 1, a C60 layer with a thickness of 30 nm and a BCP (bath copper spirit) layer with a thickness of 10 nm were formed by thermal evaporation. C60 served as the first electron transport layer, and the deposition rate was [missing information]. The BCP serves as the second electron transport layer, with a deposition rate of [missing value].

[0082] The perovskite solar cell samples from Examples 1-9 and Comparative Example 1 were tested, including hysteresis effect (hysteresis factor), photoelectric conversion efficiency, and aging experiments. The LS aging stability test (photo-aging stability test) method involved placing the perovskite solar cell sample in a simulated sunlight environment and detecting the change in photoelectric conversion efficiency over time. The DH stability test (high temperature and high humidity stability test) method involved placing the perovskite solar cell sample in a high temperature and high humidity environment and detecting the change in photoelectric conversion efficiency over time. The test temperature was 85°C and the humidity was 85% RH.

[0083] The test results of the hysteresis effect (hysteresis factor) of Examples 1-3 and Comparative Example 1 are as follows: Figure 4 As shown, the test results for photoelectric conversion efficiency (PCE) are as follows: Figure 5 As shown, by Figure 4 and Figure 5 It can be seen that the hysteresis factors of the samples in Examples 1-3 are all significantly smaller than those in Comparative Example 1, and the photoelectric conversion efficiencies of the samples in Examples 1-3 are all higher than those in Comparative Example 1. Among them, Example 1 has the highest photoelectric conversion efficiency, the best performance, and the smallest hysteresis factor. This indicates that by doping metal oxides with metal elements, the electron transport barrier can be lowered, the electron mobility can be increased, and the recombination of holes and electrons at the interface between the electron transport layer and the light-absorbing layer can be reduced, thereby improving the photoelectric conversion efficiency of the battery. Using metal oxides to form a second electron transport layer can further promote electron transport.

[0084] The photoelectric conversion efficiency test results of Examples 1, 4-6 and Comparative Example 1 are as follows: Figure 6 As shown, the photoelectric conversion efficiency of the samples in Examples 1 and 4-6 is higher than that of Comparative Example 1. Among them, the sample in Example 4 has the highest efficiency and the best performance.

[0085] The photoelectric conversion efficiency test results of Examples 7-9 and Comparative Example 1 are as follows: Figure 7As shown, the photoelectric conversion efficiency of Examples 7 to 9 is higher than that of Comparative Example 1. Among them, the sample of Example 7 has the highest efficiency and the best performance.

[0086] The test results of high temperature and high humidity stability tests for Examples 1-3 and Comparative Example 1 are as follows: Figure 8 As shown in the figures, the experimental results indicate that under high temperature and high humidity test conditions, the high temperature and high humidity stability of the battery samples in Examples 1-3 is superior to that of Comparative Example 1. Among them, the battery sample in Example 1 exhibits the lowest efficiency degradation and the best battery stability. The test results of the photo-aging stability of Examples 1-3 and Comparative Example 1 are shown in the figures. Figure 9 As shown in the experimental results, under simulated sunlight testing conditions, the stability of the battery samples in Examples 1-3 is superior to that in Comparative Example 1. Among them, the battery sample in Example 1 exhibits the lowest efficiency degradation and the best battery stability. The battery samples in Examples 1-3 demonstrate better stability under different aging conditions than the sample in Comparative Example 1. The use of electron beam deposition to form the first and second electron transport layers is particularly beneficial for improving the overall stability of the battery and extending its lifespan. Furthermore, the battery samples in Examples 4-9 also exhibit high high-temperature and high-humidity stability as well as photo-aging stability.

[0087] In the description of this specification, the terms "one embodiment," "another embodiment," "some embodiments," "some specific embodiments," "other specific embodiments," "yet another specific embodiment," etc., refer to specific features, structures, materials, or characteristics described in connection with that embodiment, which are included in at least one embodiment of the present invention. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples. Moreover, those skilled in the art can combine and integrate the different embodiments or examples described in this specification, as well as the features of different embodiments or examples, without contradiction. Additionally, it should be noted that in this specification, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features.

[0088] Although embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention. Those skilled in the art can make changes, modifications, substitutions and variations to the above embodiments within the scope of the present invention.

Claims

1. A perovskite solar cell, characterized in that, include: A conductive glass, the conductive glass comprising a glass substrate and non-metallic electrodes disposed on the surface of the glass substrate; A perovskite light-absorbing layer is disposed on the side of the non-metallic electrode away from the glass substrate; A first electron transport layer is disposed on the side of the perovskite light-absorbing layer away from the conductive glass. A metal electrode is disposed on the side of the first electron transport layer away from the conductive glass; The first electron transport layer is made of a metal oxide doped with a metal element, specifically WO3, and the metal element is Mo. Based on the total mass of the first electron transport layer, the mass percentage of the metal element is 5 wt% to 20 wt%.

2. The perovskite solar cell according to claim 1, characterized in that, At least one of the following conditions must be met: The non-metallic electrode is made of FTO or ITO. The thickness of the perovskite light-absorbing layer is 500nm-600nm; The thickness of the first electron transport layer is 10nm-30nm; The metal electrode is made of Au, Al, or Cu; The thickness of the metal electrode is 80nm-90nm.

3. The perovskite solar cell according to claim 1 or 2, characterized in that, Further includes: A hole transport layer is disposed between the non-metallic electrode and the perovskite light-absorbing layer, and the hole transport layer is made of Cu2O, CuI or nickel oxide. A second electron transport layer is disposed between the first electron transport layer and the metal electrode. The material of the second electron transport layer includes at least one of SnO2, WO3, TiO2, ZnO, ZTO, MZO, and Nb2O5.

4. The perovskite solar cell according to claim 3, characterized in that, At least one of the following conditions must be met: The thickness of the hole transport layer is 20nm-30nm; The thickness of the second electron transport layer is 10nm-20nm.

5. A method for preparing a perovskite solar cell according to any one of claims 1 to 4, characterized in that, include: A conductive glass is provided, the conductive glass comprising a glass substrate and non-metallic electrodes disposed on the surface of the glass substrate; A perovskite light-absorbing layer is formed on the side of the non-metallic electrode away from the glass substrate; A first electron transport layer is formed on the side of the perovskite light-absorbing layer away from the conductive glass. The first electron transport layer is formed by depositing a metal oxide doped with a metal element through electron beam deposition, thermal evaporation or magnetron sputtering. Alternatively, the first electron transport layer is formed by simultaneously depositing a metal element and a metal oxide through one or two of electron beam deposition, thermal evaporation or magnetron sputtering. A metal electrode is formed on the side of the first electron transport layer away from the conductive glass.

6. The method according to claim 5, characterized in that, The first electron transport layer is formed by depositing a metal oxide doped with a metal element, and the deposition rate of the first electron transport layer is [missing information].

7. The method according to claim 5, characterized in that, The first electron transport layer is formed by simultaneously depositing a metal element and a metal oxide using one or two of electron beam deposition, thermal evaporation, or magnetron sputtering, wherein the deposition rate of the metal element is [missing information]. The deposition rate of the metal oxide is 8. The method according to claim 5, characterized in that, The first electron transport layer is formed by magnetron sputtering with a power of 60W-100W.

9. The method according to any one of claims 5 to 8, characterized in that, Before forming the perovskite light-absorbing layer, a hole transport layer is formed on the side of the non-metallic electrode away from the glass substrate; Before forming the metal electrode, a second electron transport layer is formed on the side of the first electron transport layer away from the conductive glass.

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