Array substrate and its display panel and manufacturing method

Abstract

This application discloses an array substrate, its display panel, and a manufacturing method thereof. The array substrate includes a display area, a bonding area, an extension area, and a cut end face. The array substrate includes at least one signal lead, at least one bonding terminal, and at least one anti-corrosion member. The signal lead extends from the display area into the extension area and is separated from the cut end face. The bonding terminal is disposed on the signal lead within the bonding area and is electrically connected to the signal lead. The anti-corrosion member is disposed between the signal lead and the cut end face and is electrically connected to the signal lead. The anti-corrosion member is in contact with the cut end face, and the corrosion rate of the anti-corrosion member is less than the corrosion rate of the signal lead. By providing an anti-corrosion member with a corrosion rate less than that of the signal lead between the signal lead and the cut end face, this application allows corrosion starting from the cut end face to be intercepted and prevented by the anti-corrosion member, effectively reducing the risk of display abnormalities caused by corrosion extending along the signal lead to the bonding area or even the display area.

Description

Technical Field

[0001] This application relates to the field of display technology, specifically to an array substrate, its display panel, and a method for manufacturing the same. Background Technology

[0002] During the manufacturing process of the display panel, test lines that are electrically connected to the driving circuit are usually set on the array substrate to detect the array substrate. After the detection is completed, the test lines are cut off.

[0003] However, after cutting, the ends of the signal leads connecting the drive circuit in the test circuit will be exposed at the cut surface. The exposed signal leads are susceptible to corrosion, and the corrosion will extend inward along the signal leads to the bonding area and even the display area, causing abnormal display on the display panel. Summary of the Invention

[0004] This application provides an array substrate, its display panel, and a manufacturing method thereof to improve the technical problem of display abnormalities caused by corrosion extending inward along the exposed signal leads to the bonding area or even the display area in current display panels.

[0005] To solve the above-mentioned technical problems, the technical solution provided in this application is as follows:

[0006] This application provides an array substrate, including a display area, a bonding area located on at least one side of the display area, and an extension area located on the side of the bonding area away from the display area, wherein a cut end face is formed on the side of the extension area away from the bonding area; the array substrate includes:

[0007] At least one signal lead extends from the display area into the extension area, and the signal lead is separately disposed from the cutting end face; and at least one anti-corrosion member is disposed between the signal lead and the cutting end face, and the anti-corrosion member is electrically connected to the signal lead;

[0008] The corrosion-resistant component is in contact with the cut end face, and the corrosion rate of the corrosion-resistant component is less than the corrosion rate of the signal lead.

[0009] In the array substrate of this application, the anti-corrosion component includes an anti-corrosion element disposed on the side of the signal lead near the cut end face;

[0010] The first end of the corrosion-resistant component is electrically connected to the signal lead, and the second end of the corrosion-resistant component is in contact with the cut end face.

[0011] In the array substrate of this application, the anti-corrosion component includes an anti-corrosion component and a conductive component disposed on the side of the signal lead near the cut end face;

[0012] The conductive element is in contact with the cut end face, the corrosion-resistant element is located between the signal lead and the conductive element, and the corrosion-resistant element is electrically connected to the conductive element and the signal lead.

[0013] In the array substrate of this application, a laser region is provided in the extension region, and the width of the laser region is smaller than the width of the extension region in the direction from the bonding region to the extension region;

[0014] The corrosion-resistant component is located in the bonding area outside the laser zone.

[0015] In the array substrate of this application, the array substrate further includes a substrate, and a conductive portion is disposed on the substrate in the extension region that contacts the cut end face. The conductive portion is disposed in a different layer from the anti-corrosion component.

[0016] The corrosion-resistant component is electrically connected to the conductive part through at least one through-hole or through the conductive component.

[0017] In the array substrate of this application, the array substrate further includes a buffer layer disposed on the conductive portion and an interlayer dielectric layer disposed on the buffer layer, and the anti-corrosion member is disposed between the buffer layer and the interlayer dielectric layer;

[0018] In this embodiment, at least a portion of the anti-corrosion component has its orthographic projection on the conductive portion located within the conductive portion, and the anti-corrosion component is electrically connected to the conductive portion through at least one through-hole.

[0019] In the array substrate of this application, the array substrate further includes a buffer layer disposed on the conductive portion and an interlayer dielectric layer disposed on the buffer layer, and the anti-corrosion member is disposed between the buffer layer and the interlayer dielectric layer;

[0020] Wherein, the orthographic projection of the anti-corrosion component onto the conductive part does not coincide with the conductive part, and the anti-corrosion component is electrically connected to the conductive part through the conductive component.

[0021] In the array substrate of this application, the array substrate further includes a buffer layer disposed on the conductive portion and an interlayer dielectric layer disposed on the buffer layer, and the anti-corrosion member is disposed on the surface of the conductive portion;

[0022] The signal lead is electrically connected to the corrosion-resistant component through at least one via.

[0023] In the array substrate of this application, the corrosion-resistant component includes at least one material selected from oxide semiconductor materials, metal materials, metal oxide materials, and alloy materials.

[0024] In the array substrate of this application, the array substrate further includes a plurality of thin film transistors disposed on the substrate, at least one bonding terminal is disposed in the bonding region, and the signal trace is electrically connected to the thin film transistors and the bonding terminal;

[0025] The corrosion-resistant component is disposed on the same layer as the active layer of the thin-film transistor.

[0026] This application also proposes a display panel comprising the array substrate described above.

[0027] This application also proposes a method for fabricating an array substrate, comprising:

[0028] Provide a substrate;

[0029] At least one signal lead and at least one corrosion-resistant component are formed on the substrate, and the signal lead is electrically connected to the corrosion-resistant component;

[0030] At least one bonding terminal is formed on the signal lead, and the bonding terminal is electrically connected to the signal lead;

[0031] The substrate is cut to form a cut end face, and the corrosion-resistant component is brought into contact with the cut end face.

[0032] In the method for fabricating the array substrate of this application, the step of forming at least one signal lead and at least one anti-corrosion component on the substrate, and electrically connecting the signal lead to the anti-corrosion component, includes:

[0033] A light-shielding layer, a conductive portion, and a buffer layer covering the light-shielding layer and the conductive portion are formed on the substrate.

[0034] An anti-corrosion component and a thin-film transistor are formed on the buffer layer, and the anti-corrosion component is electrically connected to the conductive part, and the source or drain of the thin-film transistor is electrically connected to the light-shielding layer.

[0035] A signal lead is formed on the corrosion-resistant component, and the signal lead is electrically connected to the light-shielding layer and the corrosion-resistant component; or a signal lead and a conductive component are formed on the corrosion-resistant component, and the signal lead is electrically connected to the light-shielding layer and the corrosion-resistant component, and the conductive component is electrically connected to the corrosion-resistant component.

[0036] Beneficial effects

[0037] This application provides an anti-corrosion component with a corrosion rate lower than that of the signal lead between the signal lead and the cut end face. The anti-corrosion component is in direct contact with the cut end face. The anti-corrosion component with a lower corrosion rate has stronger anti-corrosion performance. Therefore, corrosion starting from the cut end face can be intercepted and prevented by the anti-corrosion component, effectively reducing the risk of display abnormalities caused by corrosion extending along the signal lead to the bonding area or even the display area. Attached Figure Description

[0038] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0039] Figure 1 This is a schematic diagram of the overall structure of the semi-finished substrate before cutting, as described in this application;

[0040] Figure 2 This is a schematic diagram of the first overall structure of the array substrate described in this application;

[0041] Figure 3 This is a schematic diagram of a second overall structure of the array substrate described in this application;

[0042] Figure 4 This is a schematic diagram of the third overall structure of the array substrate described in this application;

[0043] Figure 5 This is a schematic diagram of the fourth overall structure of the array substrate described in this application;

[0044] Figure 6 This is a flowchart of the fabrication process of the array substrate described in this application.

[0045] Explanation of reference numerals in the attached figures:

[0046] Display area 101, bonding area 102, extension area 103, laser area 104, cutting end face 105, cutting area 106, test area 107, cutting substrate 108, array substrate 100, substrate 110, light-shielding layer 120, conductive part 121, buffer layer 130, interlayer dielectric layer 140, signal lead 150, bonding terminal 160, passivation layer 170, test lead 180, anti-corrosion component 300, corrosion-resistant component 310, conductive component 320. Detailed Implementation

[0047] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of the embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application. In addition, it should be understood that the specific embodiments described herein are only for illustration and explanation of this application and are not intended to limit this application. In this application, unless otherwise stated, directional terms such as "upper" and "lower" generally refer to the upper and lower positions of the device in actual use or operation, specifically the drawing directions in the accompanying drawings; while "inner" and "outer" refer to the outline of the device.

[0048] During the manufacturing process of a display panel, test lines electrically connected to the driving circuit are typically placed on the array substrate to test the substrate. After testing, the test lines are cut off. However, after cutting, the ends of the signal leads connecting to the driving circuit in the test lines are exposed at the cut surface. These exposed signal leads are susceptible to corrosion, and the corrosion can extend inward along the signal leads to the bonding area and even the display area, causing display abnormalities in the display panel. This application proposes the following solution based on the above-mentioned technical problems.

[0049] Please see Figures 1 to 6 This application provides an array substrate, including a display area 101, a bonding area 102 located on at least one side of the display area 101, and an extension area 103 located on the side of the bonding area 102 away from the display area 101. A cut end face 105 is formed on the side of the extension area 103 away from the bonding area 102. The array substrate 100 includes:

[0050] At least one signal lead 150 extends from the display area 101 into the extension area 103, and the signal lead 150 is separately disposed from the cutting end face 105;

[0051] At least one bonding terminal 160 is disposed on the signal lead 150 within the bonding area 102, and the bonding terminal 160 is electrically connected to the signal lead 150; and

[0052] At least one corrosion-resistant component 300 is disposed between the signal lead 150 and the cutting end face 105, and the corrosion-resistant component 300 is electrically connected to the signal lead 150;

[0053] The corrosion-resistant component 300 is in contact with the cut end face 105, and the corrosion rate of the corrosion-resistant component 300 is less than the corrosion rate of the signal lead 150.

[0054] This application provides an anti-corrosion component 300 with a corrosion rate lower than that of the signal lead 150 between the signal lead 150 and the cutting end face 105. The anti-corrosion component 300 is in direct contact with the cutting end face 105. The anti-corrosion component 300 with a lower corrosion rate has stronger anti-corrosion performance. Therefore, corrosion starting from the cutting end face 105 can be intercepted and prevented by the anti-corrosion component 300, effectively reducing the risk of display abnormalities caused by corrosion extending along the signal lead 150 to the bonding area 102 or even the display area 101.

[0055] The technical solutions of this application will now be described with reference to specific embodiments. It should be noted that the order of description of the following embodiments is not intended to limit the preferred order of the embodiments.

[0056] Please see Figure 1 , Figure 1 This is a schematic diagram of the overall structure of the semi-finished substrate before cutting, as described in this application. In the array substrate of this application, the array substrate 100 can be cut from the semi-finished substrate. The semi-finished substrate may include the integrally formed array substrate 100 and a cutting substrate 108 located on at least one side of the array substrate 100. The cutting substrate 108 may include a cutting area 106 that intersects with the extension area 103 of the array substrate 100 and a test area 107 located on the side of the cutting area 106 away from the extension area 103. The test area 107 may be provided with test terminals for performing lamp testing on the semi-finished substrate. After the lamp testing of the semi-finished substrate is completed and repaired, it is cut along the interface between the cutting area 106 and the extension area 103 to form the cutting end face 105.

[0057] Please see Figure 2 , Figure 2 This is a schematic diagram of the first overall structure of the array substrate 100 described in this application. In this embodiment, the array substrate 100 may further include a substrate 110, a light-shielding layer 120 disposed on the substrate 110, and a plurality of thin-film transistors (not shown in the figure) disposed on the light-shielding layer 120. The orthogonal projection of the active layer of the thin-film transistor on the light-shielding layer 120 may be located within the light-shielding layer 120 to reduce photogenerated leakage current.

[0058] In this embodiment, the light-shielding layer 120 can be made of opaque metal. One of the source or drain of the thin-film transistor can be electrically connected to the metal light-shielding layer 120, and the other of the drain or source of the thin-film transistor can be electrically connected to the pixel electrode of the display panel or the anode of the light-emitting device of the display panel. The signal lead 150 can extend into the display area 101 and be electrically connected to the light-shielding layer 120, thereby achieving electrical connection with the thin-film transistor through the light-shielding layer 120. This allows data signals and test signals to be transmitted to the pixel electrode or the anode of the light-emitting device through the signal lead 150, the light-shielding layer 120, and the source or drain of the thin-film transistor, thereby realizing data input and reliability testing of the array substrate 100.

[0059] Please see Figure 2 and Figure 3 , Figure 3 This is a schematic diagram of a second overall structure of the array substrate 100 described in this application. In the array substrate of this application, the anti-corrosion component 300 may include an anti-corrosion element 310 disposed on the side of the signal lead 150 near the cut end face 105. The anti-corrosion performance of the anti-corrosion element 310 is higher than that of the signal lead 150. In other words, under the same environmental conditions, the corrosion rate of the anti-corrosion element 310 is less than that of the signal lead 150.

[0060] In this embodiment, the first end of the anti-corrosion component 310 can be electrically connected to the signal lead 150, and the second end of the anti-corrosion component 310 can contact the cutting end face 105. That is, the anti-corrosion component 310 can directly extend to the cutting end face 105, thereby intercepting corrosion from the cutting end face 105 and effectively preventing corrosion from extending to the signal lead 150 in the bonding area 102.

[0061] Please see Figure 4 and Figure 5 , Figure 4 This is a schematic diagram of the third overall structure of the array substrate 100 described in this application. Figure 5 This is a schematic diagram of the fourth overall structure of the array substrate described in this application. In the array substrate of this application, the anti-corrosion component 300 may also include an anti-corrosion element 310 and a conductive element 320 disposed on the side of the signal lead 150 near the cut end face 105. The conductive element 320 may contact the cut end face 105, the anti-corrosion element 310 may be located between the signal lead 150 and the conductive element 320, and the anti-corrosion element 310 may be electrically connected to the conductive element 320 and the signal lead 150.

[0062] In this embodiment, since the anti-corrosion component 310 is located between the signal lead 150 and the conductive component 320, the corrosion starting from the cut end face 105 can only extend to the anti-corrosion component 310 through the conductive component 320. The anti-corrosion component 310 prevents the corrosion from extending further to the signal lead 150, thus also achieving a good anti-corrosion effect.

[0063] In this embodiment, the conductive element 320 can be disposed on the same layer as the signal lead 150, and the anti-corrosion element 310 can be disposed on a different layer from the conductive element 320 and the signal lead 150. The conductive element 320 and the signal lead 150 can both be electrically connected to the anti-corrosion element 310 through at least one via.

[0064] In this embodiment, the conductive element 320 can be formed in the same process as the signal lead 150. That is, in the manufacturing process of the signal lead 150, a continuous line can be made first, and then the separately arranged signal lead 150 and the conductive element 320 can be formed by patterning, so as to simplify the manufacturing process of the anti-corrosion component 300 and reduce costs.

[0065] Please see Figure 4 In the array substrate of this application, a laser area 104 may be provided within the extension area 103. Before performing a lamp-lighting test on the semi-finished substrate, the signal leads 150 within the laser area 104 can be electrically connected as a single unit using a conductive material, or the signal leads 150 within the laser area 104 can be integrally fabricated into a planar structure using a conductive material, allowing a single test signal to be simultaneously transmitted to multiple signal leads 150, thereby improving lamp-lighting detection efficiency. After completing the lamp-lighting test on the semi-finished substrate, the multiple signal leads 150 are then independently separated using a laser engraving process to achieve subsequent reliability testing and data transmission functions.

[0066] In this embodiment, the width of the laser region 104 may be smaller than the width of the extension region 103 in the direction from the bonding area 102 to the extension region 103. The anti-corrosion component 310 may be disposed within the bonding area 102 outside the laser region 104 to avoid damage to the anti-corrosion component 310 during laser engraving of the laser region 104 of the semi-finished substrate, thereby extending the service life of the anti-corrosion component 310.

[0067] Please see Figures 1 to 5In the array substrate of this application, the array substrate 100 may further include a conductive portion 121 disposed on the substrate 110. The conductive portion 121 may extend from the cutting area 106 of the semi-finished substrate to the extension area 103 and the test area 107. The conductive portion 121 may be disposed in the same layer as the light-shielding layer 120. Preferably, the conductive portion 121 may be integrally formed with the light-shielding layer 120 and then separated by patterning.

[0068] In this embodiment, the conductive part 121 can be disposed in a different layer from the anti-corrosion component 310. The first end of the anti-corrosion component 310 can be electrically connected to the signal lead 150 through at least one via, and the second end of the anti-corrosion component 310 can be electrically connected to the conductive part 121 through at least one via or through the conductive component 320. It should be noted that the number of vias connecting the anti-corrosion component 310 to the signal lead 150, the number of vias connecting the anti-corrosion component to the conductive component 320, and the number of vias connecting the conductive component 320 to the conductive part 121 can all be multiple to improve the stability of the electrical connection.

[0069] In this embodiment, the semi-finished substrate may further include test leads 180 located within the test area 107, and test terminals electrically connected to the test leads 180 may be provided thereon. The test leads 180 may be disposed in the same layer as the signal leads 150 and the conductive element 320. Further, the test leads 180 may be integrally formed with the signal leads 150 and the conductive element 320 and fabricated through patterning.

[0070] In this embodiment, the portion of the conductive part 121 extending into the extension area 103 can be electrically connected to the anti-corrosion component 310 or the conductive component 320 through a via, and the portion of the conductive part 121 extending into the test area 107 can be electrically connected to the test lead 180 through a via. During the illumination test of the semi-finished substrate, the test signal is transmitted to the thin-film transistor via the test lead 180, the conductive part 121, the anti-corrosion component 300, the signal lead 150, and the light-shielding layer 120, and then transmitted to the pixel electrode or the anode of the light-emitting device via the thin-film transistor.

[0071] In this embodiment, since the conductive portion 121 extends from the cutting area 106 into the extension area 103, when the boundary between the extension area 103 and the cutting area 106 is cut, the cutting end face 105 divides the conductive portion 121 on the semi-finished substrate into two parts, so that the conductive portion 121 remaining on the array substrate 100 comes into contact with the cutting end face 105.

[0072] Please see Figure 2 and Figure 3 In the array substrate of this application, the array substrate 100 may further include a buffer layer 130 disposed on the conductive portion 121 and the light-shielding layer 120 and an interlayer dielectric layer 140 disposed on the buffer layer 130. The anti-corrosion member 310 may be disposed between the buffer layer 130 and the interlayer dielectric layer 140. The signal lead 150, the conductive member 320 and the test lead 180 may be disposed on the interlayer dielectric layer 140.

[0073] In this embodiment, at least a portion of the anti-corrosion component 310 may have its orthographic projection on the conductive portion 121 located within the conductive portion 121, and the anti-corrosion component 310 may be electrically connected to the conductive portion 121 through at least one through-hole.

[0074] In this embodiment, please refer to Figure 3 When the orthographic projection of the anti-corrosion component 310 onto the conductive portion 121 is entirely within the conductive portion 121, the anti-corrosion component is a planar film layer with a smooth surface; please refer to Figure 2 When the orthographic projection of the anti-corrosion component 310 on the conductive part 121 is located inside the conductive part 121, the anti-corrosion component 310 has a "climbing" structure above the conductive part 121. At this time, the anti-corrosion component 310 is a stepped film layer, and the orthographic projection of the via connecting the signal lead 150 and the anti-corrosion component 310 on the conductive part 121 does not coincide with the conductive part 121, so that the signal lead 150 can be away from the cut end face 105, reducing the risk of corrosion of the signal lead 150.

[0075] Please see Figure 4 and Figure 5 In the array substrate of this application, the orthographic projection of the anti-corrosion component 310 onto the conductive portion 121 may not coincide with the conductive portion 121. In this case, the anti-corrosion component 310 can be electrically connected to the conductive portion 121 through the conductive component 320. In other words, when the orthographic projection of the anti-corrosion component 310 onto the conductive portion 121 does not coincide with the conductive portion 121, the anti-corrosion component 310 may not be directly connected to the conductive portion 121, but may be connected to the conductive component 320 through a via, and the conductive component 320 may then be electrically connected to the conductive portion 121 through the via.

[0076] In this embodiment, the anti-corrosion component 310 is located inside the array substrate 100, which is far from the cut end face 105. This provides a certain structural protection for the anti-corrosion component 310 and reduces the risk of structural damage and degradation of anti-corrosion performance caused by the exposed components being subjected to impacts.

[0077] Please see Figure 3 In the array substrate of this application, the anti-corrosion member 310 can be disposed on the surface of the conductive part 121. At this time, the partial orthographic projection of the signal lead 150 on the conductive part 121 can coincide with the conductive part 121, so that the signal lead 150 above the conductive part 121 can be electrically connected to the anti-corrosion member 310 through at least one via.

[0078] In this embodiment, by setting the anti-corrosion component 310 on the surface of the conductive part 121, the anti-corrosion component 310 can be positioned through the conductive part 121, thereby eliminating the need for separate positioning of the anti-corrosion component 310 and simplifying the manufacturing process.

[0079] Please see Figures 2 to 5 In the array substrate of this application, the corrosion-resistant component 310 may include at least one material selected from oxide semiconductor material, metal material, metal oxide material, and alloy material.

[0080] In this embodiment, the oxide semiconductor material may include at least one of indium gallium zinc oxide (IGZO), indium zinc tin oxide (IZTO), indium gallium zinc titanium oxide (IGZTO), indium tin oxide (ITO), indium zinc oxide (IZO), and indium gallium oxide (IGO).

[0081] In this embodiment, the metallic material may include at least one of nickel, zirconium, tantalum, etc.

[0082] In this embodiment, the metal oxide material may include at least one of zinc oxide, indium oxide, aluminum zinc oxide, etc.

[0083] In this embodiment, the alloy material may include at least one of the following: nickel-based alloys, copper-nickel alloys, zirconium alloys, stainless steel alloys, etc.

[0084] In this embodiment, by selecting the above-mentioned materials to manufacture the corrosion-resistant component 310, the corrosion-resistant component 310 has stronger corrosion resistance than the signal lead 150 (usually Mo, Al, Cu, Ti, etc.), effectively preventing or delaying the corrosion diffusion that begins at the cut end face 105.

[0085] In this embodiment, when the material used to manufacture the anti-corrosion component 310 is an oxide semiconductor material, the anti-corrosion component 310 can be disposed in the same layer as the active layer of the thin film transistor. Furthermore, the anti-corrosion component 310 can be integrally formed with the active layer of the thin film transistor in the same process, and then separated by patterning.

[0086] It should be noted that, since the active layer of the thin-film transistor needs to be doped to form the channel region and the doped regions on both sides of the channel region, the active layer in the channel region maintains the characteristics of the semiconductor material, while the active layer in the doped region is heavily doped to achieve conductivity. Therefore, in this embodiment, the oxide semiconductor material forming the corrosion-resistant component 310 can also be heavily doped during the active layer doping process to achieve conductivity, so as to overcome the problem of weak conductivity of oxide semiconductor materials, and thus simultaneously possess good conductivity and corrosion resistance.

[0087] This application provides an anti-corrosion component 300 with a corrosion rate lower than that of the signal lead 150 between the signal lead 150 and the cutting end face 105. The anti-corrosion component 300 is in direct contact with the cutting end face 105. The anti-corrosion component 300 with a lower corrosion rate has stronger anti-corrosion performance. Therefore, corrosion starting from the cutting end face 105 can be intercepted and prevented by the anti-corrosion component 300, effectively reducing the risk of display abnormalities caused by corrosion extending along the signal lead 150 to the bonding area 102 or even the display area 101.

[0088] This application embodiment also provides a display panel, which may include the array substrate 100 described in any of the above embodiments. In this embodiment, the display panel may be a liquid crystal display panel, an OLED display panel, an LED display panel, etc.

[0089] Please see Figure 6 This application also provides a method for manufacturing an array substrate, used to manufacture the array substrate 100 described in the above embodiments. The method for manufacturing the array substrate 100 may include:

[0090] S100, providing a substrate 110;

[0091] S200: At least one signal lead 150 and at least one anti-corrosion component 300 are formed on the substrate 110, and the signal lead 150 is electrically connected to the anti-corrosion component 300.

[0092] S300, at least one bonding terminal 160 is formed on the signal lead 150, and the bonding terminal 160 is electrically connected to the signal lead 150;

[0093] S400, the substrate 110 is cut to form a cut end face 105, and the corrosion-resistant member 300 is brought into contact with the cut end face 105.

[0094] Through the above steps, the anti-corrosion component 300 can be formed during the fabrication of the array substrate 100, so that the anti-corrosion component 300 and other film layers of the array substrate 100 form a stable overall structure. The process is simple, and it can not only provide good anti-corrosion effect, but also extend the service life of the anti-corrosion component 300.

[0095] In the method for manufacturing the array substrate 100 of this application, step S200 may include:

[0096] S210, Clean the glass substrate to serve as substrate 110, and deposit a layer with a thickness of [thickness missing] on the substrate 110. to A conductive material of a certain thickness serves as the light-shielding layer 120 and the conductive part 121.

[0097] S220. A layer of SiOx material, SiNx material, or a multilayer thin film is deposited on the light-shielding layer 120 and the conductive part 121 to serve as a buffer layer 130, and vias are formed on the buffer layer 130. The thickness of the buffer layer 130 can be [missing information]. to

[0098] S230. An oxide semiconductor material is deposited on the buffer layer 130 as the corrosion-resistant component 310 of the corrosion-resistant member 300. The corrosion-resistant component 310 is electrically connected to the conductive part 121 through a via on the buffer layer 130. The thickness of the corrosion-resistant component 310 can be [missing information]. to

[0099] S240, Sequentially deposit a SiO layer on the oxide semiconductor layer material. x and SiN x To serve as the gate insulating layer for thin-film transistors, each layer has a thickness of [missing information]. to

[0100] S250. A metal material is deposited on the gate insulating layer as the gate layer of the thin-film transistor. The metal material of the gate layer can be Mo, Al, Cu, Ti, etc., or an alloy. The thickness of the gate layer can be [missing information]. to

[0101] S260. First, use a yellow light to etch the gate pattern of the thin-film transistor, and then use the gate pattern as self-alignment to etch the gate insulating layer.

[0102] In this embodiment, the gate insulating layer is only present below the film layer with the gate pattern; the gate insulating layer is etched away in other places.

[0103] S270. Perform plasma surface treatment on the entire surface of the array substrate 100.

[0104] In this embodiment, only the oxide semiconductor material beneath the gate pattern and the corresponding gate insulating layer is not plasma-treated, thus maintaining its semiconductor properties to form the channel region of the active layer of the thin-film transistor. The oxide semiconductor material used to form the corrosion-resistant component 310, lacking the protection of the gate pattern and gate insulating layer, experiences a significant decrease in resistance after plasma treatment, forming an N+ type conductor material.

[0105] S280, deposit an interlayer dielectric layer 140 on the buffer layer 130, and make openings on the interlayer dielectric layer 140 corresponding to the source and drain contact areas of the TFT, and at the same time make openings at the positions corresponding to the conductive portion 121.

[0106] In this embodiment, the interlayer dielectric layer 140 can be SiOx, SiNx, or a multilayer thin film, and its thickness can be [missing information]. to

[0107] S290. A metal material is deposited on the interlayer dielectric layer 140 as the source and drain metal layer of the thin-film transistor. This material can be Mo, Al, Cu, Ti, or an alloy, and its thickness is [missing information]. to Then the pattern is defined to form signal lead 150, the corrosion-resistant component 300, the conductive component 320, and the test lead 180.

[0108] Please see Figure 6 In the method for manufacturing the array substrate 100 of this application, step S300 may include:

[0109] S310. A SiOx, SiNx, or multilayer thin film is deposited on the signal lead 150 as a passivation layer 170, and a cutout portion is defined on the passivation layer 170 to expose the signal lead 150. The thickness of the passivation layer 170 can be [missing information]. to

[0110] S320. A layer of metal material is deposited on the passivation layer 170, and the pattern of the metal material is defined in the hollow portion of the passivation layer 170 to form a bonding terminal 160 electrically connected to the signal lead 150.

[0111] In this embodiment, the corrosion-resistant component 310 in the corrosion-resistant component 300 is fabricated in the same process as the active layer of the thin-film transistor, and the semiconductor corrosion-resistant component 310 is made conductive by using the plasma treatment process of the active layer, thereby giving the corrosion-resistant component 310 excellent corrosion resistance and good conductivity, which stabilizes the test results and improves the display effect.

[0112] The above provides a detailed description of an array substrate, its display panel, and its manufacturing method provided in the embodiments of this application. Specific examples have been used to illustrate the principles and implementation methods of this application. The description of the above embodiments is only for the purpose of helping to understand the method and core ideas of this application. At the same time, for those skilled in the art, there will be changes in the specific implementation methods and application scope based on the ideas of this application. Therefore, the content of this specification should not be construed as a limitation of this application.

Claims

1. An array substrate, characterized in that, The array substrate includes a display area, a bonding area located on at least one side of the display area, and an extension area located on the side of the bonding area away from the display area. A cut end face is formed on the side of the extension area away from the bonding area. A laser area is disposed within the extension area, and the width of the laser area is smaller than the width of the extension area in the direction from the bonding area to the extension area. The array substrate includes: At least one signal lead, the signal lead extending from the display area into the extension area, and the signal lead being separately disposed from the cut end face; and At least one corrosion-resistant component is disposed between the signal lead and the cut end face, and the corrosion-resistant component is connected to the signal lead; Wherein, the corrosion-resistant component is in contact with the cut end face, and the corrosion rate of the corrosion-resistant component is less than the corrosion rate of the signal lead; The corrosion-resistant component includes a corrosion-resistant part disposed on the side of the signal lead near the cut end face, and the corrosion-resistant part is disposed in an area outside the laser area; multiple signal leads are divided and independent of each other corresponding to the laser area.

2. The array substrate according to claim 1, characterized in that, The first end of the corrosion-resistant component is electrically connected to the signal lead, and the second end of the corrosion-resistant component is in contact with the cut end face.

3. The array substrate according to claim 1, characterized in that, The corrosion-resistant component includes a conductive element disposed on the side of the signal lead near the cut end face; The conductive element is in contact with the cut end face, the corrosion-resistant element is located between the signal lead and the conductive element, and the corrosion-resistant element is electrically connected to the conductive element and the signal lead.

4. The array substrate according to claim 3, characterized in that, The array substrate further includes a substrate, and a conductive portion is disposed on the substrate within the extension region that contacts the cut end face. The conductive portion is disposed in a different layer from the anti-corrosion component. The corrosion-resistant component is electrically connected to the conductive part through the conductive component.

5. The array substrate according to claim 4, characterized in that, The array substrate further includes a buffer layer disposed on the conductive portion and an interlayer dielectric layer disposed on the buffer layer, and the anti-corrosion component is disposed between the buffer layer and the interlayer dielectric layer; Wherein, the orthographic projection of the anti-corrosion component onto the conductive part does not coincide with the conductive part, and the anti-corrosion component is electrically connected to the conductive part through the conductive component.

6. The array substrate according to claim 2, characterized in that, The array substrate further includes a substrate, and a conductive portion is disposed on the substrate within the extension region that contacts the cut end face. The conductive portion is disposed in a different layer from the anti-corrosion component. The corrosion-resistant component is electrically connected to the conductive part through at least one through hole.

7. The array substrate according to claim 6, characterized in that, The array substrate further includes a buffer layer disposed on the conductive portion and an interlayer dielectric layer disposed on the buffer layer, and the anti-corrosion component is disposed between the buffer layer and the interlayer dielectric layer; In this embodiment, at least a portion of the anti-corrosion component has its orthographic projection on the conductive portion located within the conductive portion, and the anti-corrosion component is electrically connected to the conductive portion through at least one through-hole.

8. The array substrate according to claim 2, characterized in that, The array substrate further includes a substrate, and a conductive portion that contacts the cut end face is disposed on the substrate within the extended region; the array substrate further includes a buffer layer disposed on the conductive portion and an interlayer dielectric layer disposed on the buffer layer, and the anti-corrosion component is disposed on the surface of the conductive portion; The signal lead is electrically connected to the corrosion-resistant component through at least one via.

9. The array substrate according to claim 1, characterized in that, The corrosion-resistant component includes at least one material selected from oxide semiconductor materials, metallic materials, metal oxide materials, and alloy materials.

10. The array substrate according to claim 1, characterized in that, The array substrate further includes a plurality of thin-film transistors disposed on the substrate, and at least one bonding terminal is disposed in the bonding region. The signal lead is electrically connected to the thin-film transistors and the bonding terminal. The corrosion-resistant component is disposed on the same layer as the active layer of the thin-film transistor.

11. A display panel, characterized in that, Includes the array substrate as described in any one of claims 1 to 10.

12. A method for fabricating an array substrate, characterized in that, include: Provide a substrate; At least one signal lead and at least one corrosion-resistant component are formed on the substrate, and the signal lead is electrically connected to the corrosion-resistant component; At least one bonding terminal is formed on the signal lead, and the bonding terminal is electrically connected to the signal lead; The substrate is cut to form a cut end face, and the corrosion-resistant member is brought into contact with the cut end face; The manufacturing method further includes: Multiple signal leads are independently divided in the laser area of ​​the corresponding array substrate to form multiple independent signal leads; wherein, the anti-corrosion component includes an anti-corrosion member disposed on the side of the signal lead near the cut end face, and the anti-corrosion member is disposed in an area outside the laser area.

13. The method for fabricating an array substrate according to claim 12, characterized in that, The step of forming at least one signal lead and at least one corrosion-resistant component on the substrate, and electrically connecting the signal lead to the corrosion-resistant component, includes: A light-shielding layer, a conductive portion, and a buffer layer covering the light-shielding layer and the conductive portion are formed on the substrate. An anti-corrosion component and a thin-film transistor are formed on the buffer layer, and the anti-corrosion component is electrically connected to the conductive part, and the source or drain of the thin-film transistor is electrically connected to the light-shielding layer. A signal lead is formed on the corrosion-resistant component, and the signal lead is electrically connected to the light-shielding layer and the corrosion-resistant component; or a signal lead and a conductive component are formed on the corrosion-resistant component, and the signal lead is electrically connected to the light-shielding layer and the corrosion-resistant component, and the conductive component is electrically connected to the corrosion-resistant component.

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