Hole transport layer material, perovskite solar cell and preparation method and application

Abstract

The embodiment of the application provides a kind of hole transport layer material, perovskite solar cell and preparation method and application, it is related to solar cell field.The hole transport layer material includes nickel oxide NiO n Or doped nickel oxide M:NiO n ;Nickel oxide or doped nickel oxide contains Ni 2+ And Ni 3+ , and the molar ratio of Ni 2+ And Ni 3+ It is 0.5:1~5:1, and doping element M is selected from at least one of Ag, Co, Li, Cs, Cu, Cu, Mg, Zn, Sr, Y, La, Nb.The hole transport layer material, the appropriate proportion of Ni 3+ Can effectively improve the conductivity of hole transport layer material, and does not affect the light transmittance of hole transport layer material.In addition, after doping specific kind of element, the conductivity of hole transport layer material can be further improved, so as to improve the photoelectric conversion efficiency of perovskite solar cell.

Description

Technical Field

[0001] This application relates to the field of solar cells, and more specifically, to a hole transport layer material, a perovskite solar cell, its preparation method, and its application. Background Technology

[0002] Halide perovskite materials possess excellent photoelectric properties, making them suitable for fabricating solar cells. The structure of halide perovskite materials can be represented as ABX3, where A is a monovalent cation (primarily methylamine ion MA). + Formamidinium ion (FA) + Cs + 、Rb + (etc.), B is a divalent metal cation (mainly Pb) 2+ Sn 2+ X is a monovalent anion (mainly I-, Br-, Cl-). Perovskite solar cells, due to their advantages such as high absorption coefficient, long diffusion length, high defect tolerance, tunable bandgap, and low cost, have experienced rapid efficiency development since their introduction in 2009. Currently, the highest efficiency of perovskite solar cells has reached 25.7%, comparable to that of commercially available crystalline silicon solar cells.

[0003] In perovskite solar cells, the hole transport layer is a crucial component, responsible for transporting holes and blocking electrons, thus ensuring high efficiency. Currently, commonly used hole transport layer materials are primarily organic, such as sprio-OMeTAD, PEDOT:PSS, and PTAA. However, these organic hole transport layer materials typically involve complex manufacturing processes, are expensive, and suffer from poor thermal stability, hindering large-scale industrialization. Compared to organic materials, inorganic p-type nickel oxide offers advantages such as bandgap matching, wide band gap, high stability, and low cost, making it a highly promising hole transport layer material. However, the conductivity of inorganic p-type materials remains relatively lower than that of organic hole transport layer materials. Summary of the Invention

[0004] The purpose of this application is to provide a hole transport layer material, a method for preparing perovskite solar cells, and its application. This hole transport layer material not only has good conductivity, but also high stability and low cost, and can be used to prepare high-efficiency perovskite solar cells.

[0005] In a first aspect, embodiments of this application provide a hole transport layer material, which includes nickel oxide (NiO). n Or doped nickel oxide M: NiO n Nickel oxide or doped nickel oxide contains Ni 2+ and Ni 3+ , and Ni2+ Ni 3+ The molar ratio of Ni

[0006] In the above technical solution, the molar ratio of Ni 2+ can ensure that the hole transport layer material has good light transmittance, and the appropriate proportion of Ni 3+ can effectively improve the conductivity of the hole transport layer material without affecting the light transmittance of the hole transport layer material. The proportion of Ni 2+ and Ni 3+ in the nickel oxide or doped nickel oxide is 0.5:1-5:1, which can ensure that the hole transport layer material has good light transmittance and good conductivity. In addition, after doping a specific type of element M, the conductivity of the hole transport layer material can be further improved, thereby improving the photoelectric conversion efficiency of the perovskite solar cell.

[0007] In one possible implementation, the molar percentage of M in the total amount of M and Ni in the doped nickel oxide is 0%-20%.

[0008] In the above technical solution, when the molar percentage of M / (M+Ni) is 0%, it means that the hole transport layer material does not contain a doping element M, and the hole transport layer material still has good conductivity and light transmittance at this time.

[0009] In a second aspect, the embodiments of the present application provide a preparation method of the above hole transport layer material, which includes the following steps: mixing and grinding NiO particles and hydrogen peroxide, and then calcining; or grinding NiO particles, M x O y particles and a hydrogen peroxide solution, and then calcining; x and y are respectively any integer between 1 and 5.

[0010] In the above technical solution, the NiO particles, M x O y particles and hydrogen peroxide are mixed and ground and calcined. Since hydrogen peroxide has appropriate oxidizing properties, it can not only well inhibit oxygen vacancy defects in nickel oxide and other oxides, but also oxidize a certain proportion of Ni 2+ to Ni 3+ , so that the prepared hole transport layer material has good conductivity. Moreover, since the product after the reaction of hydrogen peroxide is water, it is also easy to remove, and does not need additional cleaning and purification treatment, and the operation method is simple and easy to operate.

[0011] In a possible implementation, the concentration of the hydrogen peroxide is 20wt%-50wt%, and / or the calcination temperature is 80-800 DEG C, and the calcination time is 0.5-24h.

[0012] In the technical solution, the concentration of the hydrogen peroxide is too low to eliminate the oxygen vacancy defects, and it is difficult to fully dope the nickel oxide with the doping elements. 2+ In the technical solution, the concentration of the hydrogen peroxide is too low to eliminate the oxygen vacancy defects, and it is difficult to fully dope the nickel oxide with the doping elements. 3+ In the technical solution, the concentration of the hydrogen peroxide is too low to eliminate the oxygen vacancy defects, and it is difficult to fully dope the nickel oxide with the doping elements.

[0013] In a possible implementation, when the NiO particles and the hydrogen peroxide are mixed and ground, the mass of the hydrogen peroxide accounts for 5%-20% of the total mass of the NiO particles; or when the NiO particles, the M x O y particles and the hydrogen peroxide are mixed and ground, the mass of the hydrogen peroxide accounts for 5%-20% of the total mass of the NiO particles and the M x O y particles.

[0014] In the technical solution, the mass of the hydrogen peroxide is too large to be decomposed, and the hydrogen peroxide cannot play a good oxidation role.

[0015] In a possible implementation, the particle size of the NiO particles is 10-150nm; and / or the particle size of the M x O y particles is 10-150nm.

[0016] In a third aspect, the application provides an application of the hole transport layer material in the hole transport layer of the solar cell.

[0017] In a fourth aspect, the application provides a perovskite solar cell, which comprises a conductive glass layer, a hole transport layer, a perovskite absorption layer, an electron transport layer and an electrode layer which are arranged in a stack, and the material of the hole transport layer is the hole transport layer material in the first aspect.

[0018] In the technical solution, the perovskite solar cell prepared by using the hole transport layer material in the first aspect has a high photoelectric conversion efficiency and a low preparation cost.

[0019] In a fifth aspect, the application provides a preparation method of the perovskite solar cell in the third aspect, which comprises the following steps: spin-coating a hole transport layer precursor solution on a conductive glass and annealing to form a hole transport layer, and the solute in the hole transport layer precursor solution is the hole transport layer material; forming a perovskite absorption layer on the surface of the hole transport layer; forming an electron transport layer on the surface of the perovskite absorption layer; and forming an electrode layer on the surface of the electron transport layer.

[0020] In a possible implementation, the concentration of the hole transport layer material in the hole transport layer precursor solution is 10-100 mg / mL; the solvent of the hole transport layer precursor solution is one or both of water and an organic solvent; optionally, the organic solvent includes at least one of isopropyl alcohol, ethanol, acetone, ethylene glycol, N,N-dimethylformamide, and dimethyl sulfoxide.

[0021] In the technical solution, the hole transport layer precursor solution with the concentration of 10-100 mg / mL can ensure that the thickness of the hole transport layer is within a proper range, and the hole transport layer has good light transmittance and excellent hole transport capacity. BRIEF DESCRIPTION OF DRAWINGS

[0022] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the following will briefly introduce the drawings needed to be used in the embodiments of the present application. It should be understood that the following drawings only show some embodiments of the present application, and therefore should not be regarded as a limitation on the scope. For those skilled in the art, other related drawings can also be obtained without creative labor on the basis of these drawings.

[0023] Figure 1 SEM images of the hole transport layers of the perovskite solar cells in Example 1 and Comparative Example 1 of the present application;

[0024] Figure 2 XPS images of the hole transport layers of the perovskite solar cells in Example 1 of the present application;

[0025] Figure 3 XPS images of the hole transport layers of the perovskite solar cells in Comparative Example 1 of the present application;

[0026] Figure 4 J-V curve graphs of the perovskite solar cells in Example 1 and Comparative Example 1 of the present application. DETAILED DESCRIPTION

[0027] In order to make the purpose, technical solutions and advantages of the embodiments of the present application more clear, the technical solutions in the embodiments of the present application will be clearly and completely described below. If the specific conditions are not specified in the embodiments, the conventional conditions or the conditions suggested by the manufacturers are adopted. If the reagents or instruments used are not specified by the manufacturers, they are all conventional products that can be purchased in the market.

[0028] The hole transport layer material, the preparation method thereof, the perovskite solar cell and the preparation method thereof of the embodiments of the present application will be specifically described below.

[0029] The embodiments of the present application provide a preparation method of a hole transport layer material, specifically including the following steps: mixing NiO particles, M x O yThe particles and hydrogen peroxide are mixed and ground, and then calcined, wherein the element M is selected from at least one of Ag, Co, Li, Cs, Cu, Cu, Mg, Zn, Sr, Y, La, Nb, and the molar percentage of M / (M+Ni) is 0% to 20% in terms of the mole percentage; specifically, the concentration of the hydrogen peroxide is generally 20wt% to 50wt%, and the mass of the hydrogen peroxide is generally 5% to 20% of the total mass of the NiO particles and M x O y The particles and hydrogen peroxide are mixed and ground, and then calcined, wherein the element M is selected from at least one of Ag, Co, Li, Cs, Cu, Cu, Mg, Zn, Sr, Y, La, Nb, and the molar percentage of M / (M+Ni) is 0% to 20% in terms of the mole percentage; specifically, the concentration of the hydrogen peroxide is generally 20wt% to 50wt%, and the mass of the hydrogen peroxide is generally 5% to 20% of the total mass of the NiO particles and M x O y The particles and hydrogen peroxide are mixed and ground, and then calcined, wherein the element M is selected from at least one of Ag, Co, Li, Cs, Cu, Cu, Mg, Zn, Sr, Y, La, Nb, and the molar percentage of M / (M+Ni) is 0% to 20% in terms of the mole percentage; specifically, the concentration of the hydrogen peroxide is generally 20wt% to 50wt%, and the mass of the hydrogen peroxide is generally 5% to 20% of the total mass of the NiO particles and M

[0030] After the grinding and calcining, the oxygen vacancy defects in the NiO particles are effectively inhibited, and part of the Ni 2+ will be oxidized to Ni 3+ , forming nickel oxide NiO n The molar ratio of Ni n to Ni 2+ in the nickel oxide NiO 3+ should be specifically 0.5:1 to 5:1, which is beneficial to increasing the conductivity of the hole transport layer material. In order to ensure that the oxygen vacancy defects are inhibited to the greatest extent, and also to successfully oxidize the Ni 2+ to Ni 3+ , the concentration and mass of the hydrogen peroxide cannot be too low; at the same time, they also cannot be too high, otherwise the hydrogen peroxide is easy to decompose.

[0031] In addition, in the above steps, the particle size of the NiO particles and M x O y particles is generally 10nm to 150nm, and specifically, it can be any value or a range between any two values of 10nm, 20nm, 50nm, 70nm, 100nm, 120nm, 140nm, and 150nm.

[0032] The above method has simple steps, and the oxidant is easy to obtain and inexpensive, and can prepare a hole transport layer material with good conductivity.

[0033] The embodiment of the present application also provides a perovskite solar cell, which contains the hole transport layer material in a hole transport layer, has good electric conductivity and high light transmittance, and has excellent photoelectric conversion efficiency. The preparation steps of the perovskite solar cell are as follows.

[0034] The hole transport layer material is configured as a hole transport layer precursor solution, the concentration of the hole transport layer precursor solution is generally within 10-100 mg / mL, the hole transport layer precursor solution is convenient for subsequent preparation of a hole transport layer with a proper thickness, and the solvent of the hole transport layer precursor solution is generally one or two of water and an organic solvent, and the organic solvent includes at least one of isopropyl alcohol, ethanol, acetone, ethylene glycol, N,N-dimethylformamide and dimethyl sulfoxide.

[0035] The hole transport layer precursor solution is spin-coated on the surface of a transparent conductive glass such as FTO (Fluorine Doped Tin Oxide) or ITO (Indium Tin Oxide) and is annealed to form a hole transport layer; then a perovskite absorption layer is formed on the surface of the hole transport layer by spin coating or evaporation; then an electron transport layer is formed on the surface of the perovskite absorption layer by deposition or the like; and then an electrode layer is formed by thermal evaporation or the like, and the material of the electrode layer is generally a metal.

[0036] The hole transport layer material in the embodiment of the present application can be used not only to form a hole transport layer in a perovskite solar cell, but also to form a hole transport layer in an organic solar cell.

[0037] The features and performances of the present application are further described in detail in combination with the embodiments.

[0038] Embodiment 1

[0039] The embodiment provides a Cs 0.05 FA 0.8 MA 0.15 Pb(I 0.75 Br 0.25 )3 perovskite solar cell, and a preparation method thereof is as follows.

[0040] (1) The etched FTO glass is ultrasonically cleaned in acetone, isopropyl alcohol and ethanol for 20 minutes respectively, is dried by blowing nitrogen, and is then placed in a plasma processor for ultraviolet ozone cleaning for 10 minutes; the hole transport layer precursor solution is spin-coated on the cleaned FTO substrate at 3000 rpm for 40 seconds, and then is annealed at 100 DEG C for 1 hour to obtain a nickel oxide hole transport layer, and is quickly moved into a glove box.

[0041] The hole transport layer precursor solution in the embodiment is formed by dissolving the hole transport layer material in deionized water at a concentration of 20 mg / mL, and then fully ultrasonic oscillation and stirring, wherein the preparation steps of the hole transport layer material are as follows: disperse the nickel oxide nanoparticles with a particle size of 50 nm into a grinding container, add a hydrogen peroxide solution with a concentration of 30% for dispersion grinding, and the addition mass ratio of hydrogen peroxide to nickel oxide nanoparticles is 10%.

[0042] (2) 22.1 mg of CsI, 233.8 mg of FAI, 25.2 mg of MABr, 322.7 mg of PbI2, and 110.1 mg of PbBr2 were dissolved in 800 μl of a DMF and 200 μl of DMSO mixture, and stirred at room temperature for 1 h to obtain a perovskite absorption layer precursor solution. 50 μl of the perovskite absorption layer precursor solution was spin-coated at 4500 rpm for 35 s, and 300 ul of ethyl acetate was added dropwise after 10 s of spin-coating, followed by annealing at 100°C for 1 h to obtain a CsMAFA perovskite absorption layer.

[0043] (3) SnO2 was deposited on the perovskite absorption layer by ALD (Atomic layer deposition) method to form an electron transport layer with a thickness of 20 nm.

[0044] (4) Finally, the sample was transferred to a thermal evaporation system, and a 100 nm Ag electrode was deposited through a mask to obtain a single perovskite solar cell with an effective area of 0.09 cm 2 .

[0045] Example 2

[0046] The present embodiment provides a MAPbI3 perovskite solar cell, and the preparation method is as follows:

[0047] (1) The etched FTO glass was ultrasonically cleaned in acetone, isopropanol and ethanol for 20 min, respectively, and then dried by nitrogen blowing and placed in a plasma processor for ultraviolet ozone cleaning for 10 min. The hole transport layer precursor solution was spin-coated on the cleaned FTO substrate at a speed of 3500 rpm for 35 s, and then annealed at 100°C for 1 h to obtain a hole transport layer, and then quickly transferred into a glove box.

[0048] The hole transport layer precursor solution in this embodiment is formed by dissolving the hole transport layer material in isopropanol at a concentration of 30 mg / mL, and then fully ultrasonic oscillation and stirring, wherein the preparation steps of the hole transport layer material are as follows: NiO nanoparticles with a particle size of 70 nm and Ag2O nanoparticles with a particle size of 50 nm are dispersed and mixed into a grinding container to form a mixed powder (molar ratio of 97:3), and a hydrogen peroxide solution with a concentration of 20% is added for dispersion grinding, and the addition amount of hydrogen peroxide is 5% of the mass of the mixed powder; the mixed powder after sufficient grinding is dried and calcined at 300°C for 1 hour to obtain the hole transport layer material.

[0049] (2) MAI and PbI2(molar ratio 1:1) were dissolved in a mixed solution of DMF and DMSO (volume ratio 4:1), stirred at 60°C for 12h to obtain a perovskite absorption layer precursor solution, 70μl of the perovskite absorption layer precursor solution was spin-coated at 4000rpm for 30s, 150ul of chlorobenzene was added after 10s of spin-coating, and then annealed at 100°C for 1h to obtain a MAPbI3 perovskite absorption layer.

[0050] (3) SnO2 was deposited on the perovskite absorption layer by ALD to form an electron transport layer with a thickness of 20nm.

[0051] (4) Finally, the sample was transferred to a thermal evaporation system, and a 100nm Ag electrode was deposited through a mask, and the effective area of the single perovskite cell obtained was 0.09cm 2 .

[0052] Example 3

[0053] This embodiment provides a CsPbI3 perovskite solar cell, and the preparation method is as follows:

[0054] (1) The etched FTO glass was ultrasonically cleaned in acetone, isopropanol and ethanol for 20min respectively, and then dried by nitrogen blowing and placed in a plasma processor for ultraviolet ozone cleaning for 10min; the hole transport layer precursor solution was spin-coated on the cleaned FTO substrate at a speed of 3000rpm for 40s, and then annealed at 100°C for 1h to obtain a nickel oxide hole transport layer, which was quickly transferred into a glove box.

[0055] The hole transport layer precursor solution in this embodiment is formed by dissolving the hole transport layer material in de-ethylene glycol at a concentration of 40 mg / mL, and then fully ultrasonic oscillation and stirring, wherein the preparation steps of the hole transport layer material are as follows: the nickel oxide nanoparticles with a particle size of 10 nm and the Y2O3 nanoparticles with a particle size of about 20 nm are dispersed and mixed into a grinding container to form a mixed powder (molar ratio of 92:8), and a hydrogen peroxide solution with a concentration of 20% is added for dispersion grinding, and the addition amount of the hydrogen peroxide is 20% of the mass of the mixed powder; the mixture after sufficient grinding is subjected to dry calcination treatment at 700°C for 1 hour to obtain the hole transport layer material.

[0056] (2) CsI and PbI2(molar ratio 1:1) were dissolved in a mixed solution of DMF and DMSO (volume ratio 4:1), and stirred at room temperature for 6 h to obtain a perovskite absorption layer precursor solution. 90 μl of the perovskite absorption layer precursor solution was spin-coated at 4000 rpm for 30 s, followed by pre-annealing at 70°C for 5 min, and then annealing at 190°C for 10 min to obtain a CsPbI3 perovskite absorption layer.

[0057] (3) SnO2 was deposited on the perovskite absorption layer by ALD to form an electron transport layer with a thickness of 20 nm.

[0058] (4) Finally, the sample was transferred to a thermal evaporation system, and a 100 nm Ag electrode was deposited through a mask to obtain a single perovskite solar cell with an effective area of 0.09 cm 2 .

[0059] Example 4

[0060] This embodiment provides a FAPbI3 perovskite solar cell, and the preparation method is as follows:

[0061] (1) The etched FTO glass was ultrasonically cleaned in acetone, isopropanol and ethanol for 20 min, respectively, and then dried by blowing nitrogen and placed in a plasma processor for ultraviolet ozone cleaning for 10 min. The hole transport layer precursor solution was spin-coated on the cleaned FTO substrate at 3000 rpm for 30 s, and then annealed at 100°C for 1 h to obtain a nickel oxide hole transport layer, which was quickly transferred into a glove box.

[0062] The hole transport layer precursor solution in the embodiment is formed by dissolving the hole transport layer material in propyl alcohol at a concentration of 15 mg / mL after sufficient ultrasonic oscillation and stirring, wherein the preparation steps of the hole transport layer material are as follows: nickel oxide nanoparticles with a particle size of 30 nm and Nb2O5nanoparticles with the same particle size are dispersed and mixed into a grinding container to form a mixed powder (molar ratio of 95:5), a 50% hydrogen peroxide solution is added for dispersion grinding, and the addition amount of hydrogen peroxide is 5% of the mass of the mixed powder; the mixture after sufficient grinding is subjected to dry calcination treatment at 500 ℃ for 1 hour to obtain the hole transport layer material.

[0063] (2) Dissolve FAI and PbI2(molar ratio 1:1) in a mixed solution of DMF and NMP (volume ratio 7:3), stir at 50 ℃ for 2 h to obtain a perovskite absorption layer precursor solution, take 40 μl of the perovskite absorption layer precursor solution, spin coat at 3600 rpm for 20 s, add 500 μl of ether at the 9th s of spin coating, then pre-anneal at 100 ℃ for 2 min, and then anneal at 150 ℃ for 20 min to obtain a FAPbI3perovskite absorption layer.

[0064] (3) Use ALD to deposit SnO2on the perovskite absorption layer to form an electron transport layer with a thickness of 20 nm.

[0065] (4) Finally, transfer the sample to a thermal evaporation system, deposit a 100 nm Ag electrode through a mask, and obtain a single perovskite solar cell with an effective area of 0.09 cm 2 .

[0066] Comparative Example 1

[0067] The present comparative example provides a Cs 0.05 FA 0.8 MA 0.15 Pb(I 0.75 Br 0.25 )3perovskite solar cell, and the main difference between the preparation method thereof and that of Example 1 is as follows:

[0068] The hole transport layer material used is different, and the preparation steps of the hole transport layer material in the present comparative example are as follows: dissolve nickel oxide nanoparticles with a particle size of 50 nm in deionized water at a concentration of 20 mg / mL after sufficient ultrasonic oscillation and stirring.

[0069] Application Example

[0070] Use SEM (scanning electron microscope) to test the hole transport layers in Example 1 and Comparative Example 1, respectively, and the results are as follows: Figure 1As shown. (a) is a SEM image of the hole transport layer of the perovskite solar cell in Example 1, and (b) is a SEM image of the hole transport layer of the perovskite solar cell in Comparative Example 1. From... Figure 1 It can be seen that the hole transport layer of the perovskite solar cell in Example 1 is more dense.

[0071] The hole transport layers in Example 1 and Comparative Example 1 were tested using XPS (X-ray photoelectron spectroscopy), and the results are as follows: Figure 2 and Figure 3 As shown.

[0072] Depend on Figure 2 and Figure 3 It can be seen that Ni 3+ / Ni 2+ The ratio was 1.01:1 for the untreated hydrogen peroxide. Figure 3 Increased to 2.57:1 Figure 2 This indicates that some Ni was treated with hydrogen peroxide. 2+ Oxidized into Ni 3+ .

[0073] The electrical performance of the perovskite solar cells in Example 1 and Comparative Example 1 was tested using a solar simulator at AM 1.5, and the data are shown in Table 1. The JV curves obtained from the tests are shown in Table 1. Figure 4 As shown.

[0074] Table 1. Electrical performance of perovskite solar cells in Example 1 and Comparative Example 1.

[0075]

[0076] From Table 1 and Figure 4 It can be seen that the perovskite solar cell in Example 1 has a higher short-circuit current density and fill factor, and its photoelectric conversion efficiency is improved by 0.75% compared with Comparative Example 1.

[0077] The above description is merely an embodiment of this application and is not intended to limit the scope of protection of this application. Various modifications and variations can be made to this application by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the scope of protection of this application.

Claims

1. A hole transport layer material, characterized in that, It includes nickel oxide (NiO). n Or doped nickel oxide M: NiO n The nickel oxide or the doped nickel oxide contains Ni. 2+ and Ni 3+ , and Ni 2+ with Ni 3+ The molar ratio is 0.5:1 to 5:1, and the dopant element M is selected from at least one of Ag, Co, Li, Cs, Cu, Cu, Mg, Zn, Sr, Y, La, and Nb; The method for preparing the hole transport layer material includes the following steps: NiO particles and hydrogen peroxide are mixed and ground, and then calcined. Alternatively, NiO particles, M x O y The particles and hydrogen peroxide are mixed and ground, and then calcined; x and y are selected from any integers between 1 and 5. The concentration of the hydrogen peroxide is 20wt%~50wt%; and / or the calcination temperature is 80~800℃ and the calcination time is 0.5~24h.

2. The hole transport layer material according to claim 1, characterized in that, The molar percentage of M in the total amount of M and Ni in the doped nickel oxide is 0%~20%.

3. The hole transport layer material according to claim 1, characterized in that, When NiO particles and hydrogen peroxide are mixed and ground, the mass of hydrogen peroxide accounts for 5% to 20% of the mass of NiO particles. Alternatively, the NiO particles, M x O y When the NiO particles and hydrogen peroxide are mixed and ground, the mass ratio of the hydrogen peroxide to the mass ratio of the NiO particles and the M... x O y 5% to 20% of the total mass of particles.

4. The hole transport layer material according to claim 1, characterized in that, The NiO particles have a particle size of 10~150 nm; and / or, the M x O y The particle size is 10~150nm.

5. The use of the hole transport layer material as described in claim 1 in forming a hole transport layer in a solar cell.

6. A perovskite solar cell, characterized in that, It includes a conductive glass layer, a hole transport layer, a perovskite absorption layer, an electron transport layer, and an electrode layer stacked together, wherein the hole transport layer is made of the hole transport layer material as described in claim 1.

7. A method for preparing a perovskite solar cell as described in claim 6, characterized in that, It includes the following steps: A hole transport layer precursor solution is spin-coated onto conductive glass and annealed to form a hole transport layer, wherein the solute in the hole transport layer precursor solution is the hole transport layer material. A perovskite absorber layer is formed on the surface of the hole transport layer; an electron transport layer is formed on the surface of the perovskite absorber layer; and an electrode layer is formed on the surface of the electron transport layer.

8. The method for preparing a perovskite solar cell according to claim 7, characterized in that, In the hole transport layer precursor solution, the concentration of the hole transport layer material is 10~100 mg / mL; the solvent of the hole transport layer precursor solution is one or two of water and organic solvents.

9. The method for preparing a perovskite solar cell according to claim 8, characterized in that, The organic solvent includes at least one of isopropanol, ethanol, acetone, ethylene glycol, N,N-dimethylformamide, and dimethyl sulfoxide.

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