Negative voltage rapid self-establishment circuit and gate drive circuit based on bootstrap boost

Abstract

The present invention provides a negative voltage rapid self - establishment circuit and a gate driving circuit based on bootstrap boost, including: a bootstrap boost unit, a signal generation unit, a negative voltage self - establishment and gate driving unit, and a switching device unit; The bootstrap boost unit is used to provide a high - voltage voltage source; One side of the signal generation unit is connected to the bootstrap boost unit, and is used to convert the received control signal into a unipolar gate driving signal; One side of the negative voltage self - establishment and gate driving unit is connected to the other side of the signal generation unit, and is used to receive the unipolar gate signal and convert it into a bipolar gate driving signal with a negative voltage; The switching device unit is connected to the other side of the negative voltage self - establishment and gate driving unit, and is used to apply the bipolar gate driving signal to the switching device unit. Thus, the bootstrap unipolar voltage signal can be converted into a bipolar gate driving signal, increasing the voltage difference from the negative potential to the gate threshold of the switching power device, enhancing the anti - interference ability, and improving the usage reliability.

Description

Technical Field

[0001] The present invention relates to the field of power electronics technology, and in particular, to a negative voltage rapid self - establishment circuit and a gate drive circuit based on bootstrap boost. Background Art

[0002] In the field of power electronics technology, bridge or half - bridge circuits, or Buck - type chopper circuits are often encountered. At this time, the power supply of the upper bridge arm needs to be galvanically isolated.

[0003] In the related art, an isolated power supply is used. However, due to the characteristics of low cost, small volume, high reliability, etc. of the bootstrap boost method, it is increasingly widely used in fields such as motor drive, variable - frequency air conditioner, high - frequency switching power supply, vehicle power supply, etc. However, the bootstrap boost method in the related art does not have the function of supplying power with a negative voltage power supply, and the reliability of use is relatively poor. Summary of the Invention

[0004] The present invention aims to solve at least one of the technical problems in the related art to some extent.

[0005] The present invention proposes a negative voltage rapid self - establishment circuit and a gate drive circuit based on bootstrap boost to convert a bootstrap unipolar voltage signal into a bipolar gate drive signal, increase the voltage difference from the negative potential to the gate threshold of the switching power device, improve the anti - interference ability, and improve the reliability of use.

[0006] The first - aspect embodiment of the present invention proposes a negative voltage rapid self - establishment circuit and a gate drive circuit based on bootstrap boost, including:

[0007] A bootstrap boost unit, a signal generation unit, a negative voltage self - establishment and gate drive unit, and a switching device unit;

[0008] The bootstrap boost unit is used to provide a high - voltage voltage source;

[0009] One side of the signal generation unit is connected to the bootstrap boost unit, and is used to convert the received control signal into a unipolar gate drive signal;

[0010] One side of the negative voltage self - establishment and gate drive unit is connected to the other side of the signal generation unit, and is used to receive the unipolar gate signal and convert it into a bipolar gate drive signal with a negative voltage;

[0011] The switching device unit is connected to the other side of the negative voltage self - establishment and gate drive unit, and is used to apply the bipolar gate drive signal to the switching device unit.

[0012] The negative voltage rapid self - establishment circuit and gate drive circuit based on bootstrap boost in the embodiments of the present invention use a bootstrap boost unit to provide a high - voltage power source. One side of the signal generation unit is connected to the bootstrap boost unit and is used to convert the received control signal into a unipolar gate drive signal. One side of the negative voltage self - establishment and gate drive unit is connected to the other side of the signal generation unit and is used to receive the unipolar gate signal and convert it into a bipolar gate drive signal with a negative voltage. The switching device unit is connected to the other side of the negative voltage self - establishment and gate drive unit and is used to apply the bipolar gate drive signal to the switching device unit. Thus, the bootstrap unipolar voltage signal can be converted into a bipolar gate drive signal, increasing the voltage difference from the negative potential to the gate threshold of the switching power device, enhancing the anti - interference ability, and improving the reliability of use.

[0013] Optionally, in an embodiment of the present invention, the negative voltage self - establishment and gate drive unit includes: a first capacitor, a first voltage - stabilizing diode, a first diode, a first resistor, and a second voltage - stabilizing diode;

[0014] Wherein, one end of the first capacitor is connected to the cathode of the first voltage - stabilizing diode and is connected to the output end of the signal generation unit;

[0015] The other end of the first capacitor is connected to the anode of the first voltage - stabilizing diode and is connected to the anode of the first diode as the output end of the negative voltage self - establishment and gate drive unit;

[0016] The cathode of the second voltage - stabilizing diode is connected to one end of the first resistor and is connected to the cathode of the first diode. The other end of the first resistor is connected to the anode of the second voltage - stabilizing diode and is connected to the feedback reference ground end of the drive circuit.

[0017] Optionally, in an embodiment of the present invention, the negative voltage self - establishment and gate drive unit further includes: a second capacitor;

[0018] One end of the second capacitor is connected to the cathode of the first diode, the cathode of the second voltage - stabilizing diode, and one end of the first resistor;

[0019] The other end of the second capacitor is connected to the anode of the second voltage - stabilizing diode, the other end of the first resistor, and is connected to the feedback reference ground end of the drive circuit.

[0020] Optionally, in an embodiment of the present invention, the negative voltage self - establishment and gate drive unit further includes: a second resistor;

[0021] One end of the second resistor is connected to the first capacitor and the anode of the first voltage - stabilizing diode, and the other end of the second resistor is connected to the anode of the first diode as the output end of the negative voltage self - establishment and gate drive unit; or,

[0022] One end of the second resistor is connected to the output end of the signal generating unit, and the other end of the second resistor is connected to one end of the first capacitor and simultaneously connected to the cathode of the first voltage stabilizing diode.

[0023] Optionally, in an embodiment of the present invention, the negative voltage self - establishment and gate driving unit further includes: a third diode;

[0024] The cathode of the third diode is connected to one end of the second resistor, one end of the first capacitor, and the anode of the first voltage stabilizing diode, and the anode of the third diode is connected to the other end of the second resistor and the anode of the first diode as the output end of the negative voltage self - establishment and gate driving unit; or,

[0025] The cathode of the third diode is connected to one end of the second resistor and the output end of the signal generating unit, and the anode of the third diode is connected to the other end of the second resistor, one end of the first capacitor, and the anode of the first voltage stabilizing diode.

[0026] Optionally, in an embodiment of the present invention, the signal generating unit includes: a first switch and a second switch;

[0027] Wherein, one end of the first switch is connected to the high potential of the high - voltage power supply, the other end of the first switch is connected to one end of the second switch and serves as the output end of the signal generating unit, and the other end of the second switch is connected to the low potential of the high - voltage power supply and connected to the feedback reference ground end of the driving circuit; or,

[0028] One end of the first switch is connected to the high potential of the high - voltage power supply, the other end of the first switch serves as the high - level signal output end of the signal generating unit, one end of the second switch is connected to the low potential of the high - voltage power supply and the feedback reference ground end of the driving circuit, and the other end of the second switch serves as the low - level signal output end of the signal generating unit;

[0029] Both the first switch and the second switch are controlled by the upper computer to generate a unipolar pulse signal for gate driving.

[0030] Optionally, in an embodiment of the present invention, the negative voltage self - establishment and gate driving unit further includes: a second resistor;

[0031] One end of the second resistor is connected to the first switch as the high - level signal output end of the signal generating unit, and the other end of the second resistor is connected to one end of the first capacitor, the cathode of the first voltage stabilizing diode, and the second switch as the low - level signal output end of the signal generating unit.

[0032] Optionally, in an embodiment of the present invention, the negative pressure self - establishment and gate driving unit further includes: a fourth resistor;

[0033] One end of the fourth resistor is connected to one end of the second resistor, one end of the first capacitor, and the cathode of the first voltage - stabilizing diode, and the other end of the fourth resistor is connected to the second switch as the low - level output end of the signal generating unit.

[0034] Optionally, in an embodiment of the present invention, the bootstrap boosting unit includes: a second diode and a third capacitor;

[0035] Wherein, one end of the third capacitor is connected to the cathode of the second diode as the high potential of the high - voltage power source, and is connected to one end of the first switch. The anode of the second diode is connected to the high - potential end of the low - voltage power supply.

[0036] Optionally, in an embodiment of the present invention, the bootstrap boosting unit further includes: a third resistor;

[0037] One end of the third resistor is connected to the cathode of the second diode, and the other end of the third resistor is connected to the third capacitor as the high potential of the high - voltage power source.

[0038] Optionally, in an embodiment of the present invention, when the gate driving circuit is two - way or drives a bridge circuit, the low - voltage power supply includes: a first voltage source;

[0039] The first voltage source is used to provide the power supply voltage for the two - way gate driving circuit. The high potential of the first voltage source is connected to the anode of the second diode as the high - potential power supply of the low - voltage end, and the low potential of the first voltage source is connected to the driving feedback loop of the low - voltage end as the reference ground end of the gate driving loop of the low - voltage end.

[0040] Optionally, in an embodiment of the present invention, the switching device unit includes one or more switches selected from, but not limited to, metal - oxide - semiconductor field - effect transistors (MOSFETs), insulated - gate bipolar transistors (IGBTs), thyristors, and high - electron - mobility transistors (HEMTs); the manufacturing materials of the switches include one or more selected from, but not limited to, silicon, compound silicon carbide, gallium nitride, gallium oxide, aluminum nitride, and diamond.

[0041] Additional aspects and advantages of the present invention will be given in part in the following description, become apparent in part from the following description, or be understood through the practice of the present invention. Description of the Drawings

[0042] The above and / or additional aspects and advantages of the present invention will become apparent and be readily understood from the following description of embodiments in conjunction with the accompanying drawings, where:

[0043] Figure 1 FIG. 4 is a schematic structural diagram of a negative voltage rapid self - establishment circuit and a gate drive circuit based on bootstrap boost according to Embodiment 1 of the present invention;

[0044] Figure 2 FIG. 8 is a schematic structural diagram of a negative voltage rapid self - establishment circuit and a gate drive circuit based on bootstrap boost according to Embodiment 2 of the present invention;

[0045] Figure 3 FIG. 12 is a schematic structural diagram of a negative voltage rapid self - establishment circuit and a gate drive circuit based on bootstrap boost according to Embodiment 3 of the present invention;

[0046] Figure 4 FIG. 16 is a schematic structural diagram of a negative voltage rapid self - establishment circuit and a gate drive circuit based on bootstrap boost according to Embodiment 4 of the present invention;

[0047] Figure 5 FIG. 20 is a schematic structural diagram of a negative voltage rapid self - establishment circuit and a gate drive circuit based on bootstrap boost according to Embodiment 5 of the present invention;

[0048] Figure 6 FIG. 24 is a schematic structural diagram of a negative voltage rapid self - establishment circuit and a gate drive circuit based on bootstrap boost according to Embodiment 6 of the present invention;

[0049] Figure 7 FIG. 28 is a schematic structural diagram of a negative voltage rapid self - establishment circuit and a gate drive circuit based on bootstrap boost according to Embodiment 7 of the present invention;

[0050] Figure 8 FIG. 32 is a schematic structural diagram of a negative voltage rapid self - establishment circuit and a gate drive circuit based on bootstrap boost according to Embodiment 8 of the present invention;

[0051] Figure 9 FIG. 36 is a schematic structural diagram of a negative voltage rapid self - establishment circuit and a gate drive circuit based on bootstrap boost according to Embodiment 9 of the present invention;

[0052] Figure 10 FIG. 40 is a waveform conversion schematic diagram of a negative voltage rapid self - establishment circuit and a gate drive circuit based on bootstrap boost according to an embodiment of the present invention;

[0053] Figure 11 FIG. 44 is an unfolded diagram of a negative voltage rapid self - establishment circuit and a gate drive circuit based on bootstrap boost according to an embodiment of the present invention;

[0054] Figure 12It is an expanded view of a negative voltage rapid self - establishment circuit and a gate drive circuit based on bootstrap boost according to an embodiment of the present invention. Detailed implementation manners

[0055] The embodiments of the present invention will be described in detail below. The examples of the embodiments are shown in the accompanying drawings, where the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and are intended to explain the present invention, and should not be construed as a limitation of the present invention.

[0056] The negative voltage rapid self - establishment circuit and the gate drive circuit based on bootstrap boost according to the embodiments of the present invention will be described below with reference to the accompanying drawings.

[0057] Figure 1 It is a schematic structural diagram of a negative voltage rapid self - establishment circuit and a gate drive circuit provided by Embodiment 1 of the present invention.

[0058] As Figure 1 shown, the negative voltage rapid self - establishment circuit and the gate drive circuit based on bootstrap boost may include: a bootstrap boost unit 100, a signal generation unit 200, a negative voltage self - establishment and gate drive unit 300, and a switching device unit 400.

[0059] Among them, the bootstrap boost unit 100 is used to provide a high - voltage power source.

[0060] One side of the signal generation unit 200 is connected to the bootstrap boost unit 100, and is used to convert the received control signal into a unipolar gate drive signal.

[0061] One side of the negative voltage self - establishment and gate drive unit 300 is connected to the other side of the signal generation unit 200, and is used to receive the unipolar gate signal and convert it into a bipolar gate drive signal with a negative voltage.

[0062] The switching device unit 400 is connected to the other side of the negative voltage self - establishment and gate drive unit 300, and is used to apply the bipolar gate drive signal to the switching device unit 400.

[0063] In a possible implementation manner of the present invention, as Figure 2 shown, the negative voltage self - establishment and gate drive unit 300 includes: a first capacitor C1, a first voltage - stabilizing diode Z1, a first diode D1, a first resistor R1, and a second voltage - stabilizing diode Z2.

[0064] Among them, one end of the first capacitor C1 is connected to the cathode of the first voltage - stabilizing diode Z1 and is connected to the output end of the signal generation unit 200.

[0065] The other end of the first capacitor C1 is connected to the anode of the first voltage regulator Z1 and is connected to the anode of the first diode D1 as the output terminal of the negative voltage self - establishment and gate drive unit 300.

[0066] The cathode of the second voltage regulator Z2 is connected to one end of the first resistor R1 and is connected to the cathode of the first diode D1. The other end of the first resistor R1 is connected to the anode of the second voltage regulator Z2 and is connected to the feedback reference ground terminal of the drive circuit.

[0067] In a possible implementation manner of the present invention, as Figure 3 shown, the negative voltage self - establishment and gate drive unit 300 further includes: a second capacitor C2.

[0068] Wherein, one end of the second capacitor C2 is connected to the cathode of the first diode D1, the cathode of the second voltage regulator Z2, and one end of the first resistor R1.

[0069] The other end of the second capacitor C2 is connected to the anode of the second voltage regulator Z2, the other end of the first resistor R1, and is connected to the feedback reference ground terminal of the drive circuit.

[0070] In a possible implementation manner of the present invention, as Figure 3 shown, on the basis of Figure 2 , the negative voltage self - establishment and gate drive unit 300 further includes: the negative voltage self - establishment and gate drive unit 300 further includes: a second resistor R2.

[0071] One end of the second resistor R2 is connected to the first capacitor C1 and the anode of the first voltage regulator Z1. The other end of the second resistor R2 is connected to the anode of the first diode D1 as the output terminal of the negative voltage self - establishment and gate drive unit 300. Or,

[0072] In a possible implementation manner of the present invention, as Figure 4 shown, on the basis of Figure 3 , the negative voltage self - establishment and gate drive unit 300 further includes: a third diode D3.

[0073] Wherein, the cathode of the third diode D3 is connected to one end of the second resistor R2, one end of the first capacitor C1, and the anode of the first voltage regulator Z1. The anode of the third diode D3 is connected to the other end of the second resistor R2 and the anode of the first diode D1 as the output terminal of the negative voltage self - establishment and gate drive unit 300.

[0074] In a possible implementation manner of the present invention, as Figure 5 shown, on the basis of Figure 2 , one end of the second resistor R2 is connected to the output terminal of the signal generation unit 200. The other end of the second resistor R2 is connected to one end of the first capacitor C1 and is simultaneously connected to the cathode of the first voltage regulator Z1.

[0075] The cathode of the third diode D3 is connected to one end of the second resistor R2 and the output end of the signal generating unit 200, and the anode of the third diode D3 is connected to the other end of the second resistor R2, one end of the first capacitor C1, and the anode of the first voltage stabilizing diode Z1.

[0076] In a possible implementation manner of the present invention, as Figures 2 - 5 shown, the signal generating unit 100 includes: a first switch S1 and a second switch S2.

[0077] Wherein, one end of the first switch S1 is connected to the high potential of the high-voltage power supply, the other end of the first switch S1 is connected to one end of the second switch S2 and serves as the output end of the signal generating unit 200, and the other end of the second switch S2 is connected to the low potential of the high-voltage power supply, connecting the feedback reference ground end of the drive loop.

[0078] Wherein, both the first switch and the second switch are controlled by the upper computer to generate a unipolar pulse signal for gate drive.

[0079] In a possible implementation manner of the present invention, as Figure 6 shown, on the basis of Figure 5 , one end of the first switch S1 is connected to the high potential of the high-voltage power supply, the other end of the first switch S1 serves as the high-level signal output end of the signal generating unit, one end of the second switch S2 is connected to the low potential of the high-voltage power supply and the feedback reference ground end of the drive loop, the other end of the second switch S2 serves as the low-level signal output end of the signal generating unit, one end of the second resistor R2 is connected to the first switch S1 serving as the high-level signal output end of the signal generating unit, and the other end of the second resistor R2 is connected to one end of the first capacitor C1, the cathode of the first voltage stabilizing diode Z1, and the second switch S2 serving as the low-level signal output end of the signal generating unit 200.

[0080] In a possible implementation manner of the present invention, as Figure 7 shown, on the basis of Figure 6 , the negative voltage self-establishing and gate driving unit 300 further includes: a fourth resistor R4.

[0081] One end of the fourth resistor R4 is connected to one end of the second resistor R2, one end of the first capacitor C1, and the cathode of the first voltage stabilizing diode Z1, and the other end of the fourth resistor R4 is connected to the second switch S2 serving as the low-level output end of the signal generating unit 200.

[0082] In a possible implementation manner of the present invention, as Figures 1 - 7 shown, the bootstrap boosting unit 100 includes: a second diode D2 and a third capacitor C3.

[0083] Among them, one end of the third capacitor C3 is connected to the cathode of the second diode D2 as the high potential of the high-voltage power source, and is also connected to one end of the first switch S1. The anode of the second diode D2 is connected to the high-potential end of the low-voltage power supply.

[0084] In a possible implementation manner of the present invention, as Figures 3 - 7 shown, the bootstrap boost unit 100 further includes: a third resistor R3.

[0085] Among them, the third resistor R3 is inserted as a current-limiting resistor into the connection end of the second diode D2 and the third capacitor C3, that is, one end of the third resistor R3 is connected to the cathode of the second diode D2, and the other end of the third resistor R3 is connected to the third capacitor C3 as the high potential of the high-voltage power source.

[0086] In a possible implementation manner of the present invention, as Figure 8 or Figure 9 shown, when the gate drive circuit is two-way or drives a bridge circuit, the low-voltage power supply includes: a first voltage source V1.

[0087] The first voltage source V1 is used to provide the power supply voltage for the two-way gate drive circuit. The high potential of the first voltage source V1 is connected to the anode of the second diode D2 as the high-potential power supply of the low-voltage end, and the low potential of the first voltage source V1 is connected to the drive feedback loop of the low-voltage end as the reference ground end of the gate drive loop of the low-voltage end.

[0088] In a possible implementation manner of the present invention, the switching device unit 400 includes one or more switches such as, but not limited to, a metal-oxide-semiconductor field-effect transistor (MOSFET), an insulated-gate bipolar transistor (IGBT), a thyristor, and a high electron mobility transistor (HEMT); the manufacturing materials of the switches include one or more of, but not limited to, silicon, compound silicon carbide, gallium nitride, gallium oxide, aluminum nitride, and diamond.

[0089] In a possible implementation manner of the present invention, as Figure 10 shown, it is a schematic diagram of waveform conversion of the negative-voltage fast self-establishment circuit based on bootstrap boost and the gate drive circuit. Figure 10 In the horizontal axis is the time value, with the unit of ms, and the vertical axis is the voltage value, with the unit of V. As Figure 10 shown, the waveform of the unipolar gate drive signal output by the signal generation unit 200 only includes positive voltage values, and the waveform of the bipolar gate drive signal output by the negative-voltage self-establishment and gate drive unit 300 includes both positive voltage values and negative voltage values.

[0090] Furthermore, the waveform conversion of the negative-voltage fast self-establishment circuit based on bootstrap boost and the gate drive circuit in Figure 10 is expanded to obtain as Figure 11For the unfolded diagram shown, continue to unfold the waveform unfolded diagram in Figure 11 to obtain the waveform unfolded diagram as shown in Fig. 12.

[0091] The negative voltage rapid self - establishment circuit and gate drive circuit based on bootstrap boost in the embodiments of the present invention use a bootstrap boost unit to provide a high - voltage voltage source. One side of the signal generation unit is connected to the bootstrap boost unit and is used to convert the received control signal into a unipolar gate drive signal. One side of the negative voltage self - establishment and gate drive unit is connected to the other side of the signal generation unit and is used to receive the unipolar gate signal and convert it into a bipolar gate drive signal with a negative voltage. The switching device unit is connected to the other side of the negative voltage self - establishment and gate drive unit and is used to apply the bipolar gate drive signal to the switching device unit. Thus, the bootstrap unipolar voltage signal can be converted into a bipolar gate drive signal, increasing the voltage difference from the negative potential to the gate threshold of the switching power device, enhancing the anti - interference ability, and improving the reliability of use.

[0092] In the description of this specification, the description with reference to terms such as "one embodiment", "some embodiments", "example", "specific example", or "some examples" means that the specific features, structures, materials, or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representations of the above - mentioned terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials, or characteristics described can be combined in a suitable manner in any one or more embodiments or examples. In addition, without contradiction, those skilled in the art can combine and combine the different embodiments or examples described in this specification and the features of different embodiments or examples.

[0093] In addition, the terms "first" and "second" are only used for descriptive purposes and cannot be understood as indicating or implying relative importance or implicitly indicating the quantity of the indicated technical features. Thus, the features defined with "first" and "second" can explicitly or implicitly include at least one of the features. In the description of the present invention, the meaning of "a plurality" is at least two, such as two, three, etc., unless otherwise specifically and clearly defined.

[0094] It should be understood that various parts of the present invention can be implemented by hardware, software, firmware or a combination thereof. In the above embodiments, multiple steps or methods can be implemented by software or firmware stored in a memory and executed by a suitable instruction execution system. For example, if implemented by hardware, as in another embodiment, any one of the following techniques known in the art or a combination thereof can be used: discrete logic circuits having logic gate circuits for implementing logical functions on data signals, application specific integrated circuits having appropriate combinational logic gate circuits, programmable gate arrays (PGAs), field programmable gate arrays (FPGAs), etc.

[0095] Those of ordinary skill in the art can understand that all or part of the steps carried by the method of implementing the above embodiments can be completed by instructing relevant hardware through a program, and the program can be stored in a computer-readable storage medium. When the program is executed, it includes one or a combination of the steps of the method embodiments.

[0096] In addition, each functional unit in various embodiments of the present invention can be integrated into a processing module, or each unit can exist physically alone, or two or more units can be integrated into one module. The above integrated module can be implemented in the form of hardware or in the form of a software functional module. When the above integrated module is implemented in the form of a software functional module and sold or used as an independent product, it can also be stored in a computer-readable storage medium.

[0097] The above-mentioned storage medium can be a read-only memory, a magnetic disk or an optical disc, etc. Although the embodiments of the present invention have been shown and described above, it can be understood that the above embodiments are exemplary and should not be construed as limiting the present invention. Those of ordinary skill in the art can make changes, modifications, substitutions and variations to the above embodiments within the scope of the present invention.

Claims

1. A negative voltage rapid self - establishment circuit and a gate drive circuit based on bootstrap boost, characterized in that, Comprising: A bootstrap boost unit, a signal generation unit, a negative voltage self - establishment and gate drive unit, and a switching device unit; The bootstrap boost unit is used to provide a high - voltage power source; One side of the signal generation unit is connected to the bootstrap boost unit and is used to convert the received control signal into a unipolar gate drive signal; One side of the negative voltage self - establishment and gate drive unit is connected to the other side of the signal generation unit and is used to receive the unipolar gate drive signal and convert it into a bipolar gate drive signal with a negative voltage; The switching device unit is connected to the other side of the negative voltage self - establishment and gate drive unit and is used to apply the bipolar gate drive signal to the switching device unit; The negative voltage self - establishment and gate drive unit includes: a first capacitor, a first voltage - stabilizing diode, a first diode, a first resistor, and a second voltage - stabilizing diode; Wherein, one end of the first capacitor is connected to the cathode of the first voltage - stabilizing diode and is connected to the output end of the signal generation unit; The other end of the first capacitor is connected to the anode of the first voltage - stabilizing diode and is connected to the anode of the first diode as the output end of the negative voltage self - establishment and gate drive unit; The cathode of the second voltage - stabilizing diode is connected to one end of the first resistor and is connected to the cathode of the first diode. The other end of the first resistor is connected to the anode of the second voltage - stabilizing diode and is connected to the feedback reference ground end of the drive circuit; The negative voltage self - establishment and gate drive unit further includes: a second capacitor; One end of the second capacitor is connected to the cathode of the first diode, the cathode of the second voltage - stabilizing diode, and one end of the first resistor; The other end of the second capacitor is connected to the anode of the second voltage - stabilizing diode, the other end of the first resistor, and is connected to the feedback reference ground end of the drive circuit.

2. The negative-pressure rapid self-establishment circuit and gate drive circuit based on bootstrap boost as claimed in claim 1, wherein The negative voltage self - establishment and gate drive unit further includes: a second resistor; One end of the second resistor is connected to the first capacitor and the anode of the first voltage - stabilizing diode, and the other end of the second resistor is connected to the anode of the first diode as the output end of the negative voltage self - establishment and gate drive unit; or, One end of the second resistor is connected to the output end of the signal generation unit, and the other end of the second resistor is connected to one end of the first capacitor and is simultaneously connected to the cathode of the first voltage - stabilizing diode.

3. The negative pressure rapid self-establishment circuit and gate drive circuit based on bootstrap boost as claimed in claim 2, wherein The negative voltage self - establishment and gate drive unit further includes: a third diode; The cathode of the third diode is connected to one end of the second resistor, one end of the first capacitor, and the anode of the first voltage - stabilizing diode, and the anode of the third diode is connected to the other end of the second resistor and the anode of the first diode as the output end of the negative voltage self - establishment and gate drive unit; or, The cathode of the third diode is connected to one end of the second resistor and the output end of the signal generation unit, and the anode of the third diode is connected to the other end of the second resistor, one end of the first capacitor, and the anode of the first voltage - stabilizing diode.

4. The negative pressure rapid self - establishment circuit and gate drive circuit based on bootstrap boost as claimed in claim 3, wherein The signal generation unit includes: a first switch and a second switch; One end of the first switch is connected to the high potential of the high-voltage power supply. The other end of the first switch is connected to one end of the second switch and serves as the output end of the signal generation unit. The other end of the second switch is connected to the low potential of the high-voltage power supply and is connected to the feedback reference ground end of the drive circuit; or, One end of the first switch is connected to the high potential of the high-voltage power supply. The other end of the first switch serves as the high-level signal output end of the signal generation unit. One end of the second switch is connected to the low potential of the high-voltage power supply and the feedback reference ground end of the drive circuit. The other end of the second switch serves as the low-level signal output end of the signal generation unit; Both the first switch and the second switch are controlled by the host computer to generate unipolar pulse signals for gate driving.

5. The negative-pressure rapid self-establishment circuit and gate driving circuit based on bootstrap boost as claimed in claim 4, wherein The negative voltage self-establishment and gate drive unit further includes: a second resistor; One end of the second resistor is connected to the high-level signal output end of the first switch serving as the signal generation unit. The other end of the second resistor is connected to one end of the first capacitor, the cathode of the first voltage regulator tube, and the low-level signal output end of the second switch serving as the signal generation unit.

6. The negative pressure rapid self - establishment circuit and gate driving circuit based on bootstrap boost as claimed in claim 5, wherein The negative voltage self-establishment and gate drive unit further includes: a fourth resistor; One end of the fourth resistor is connected to one end of the second resistor, one end of the first capacitor, and the cathode of the first voltage regulator tube. The other end of the fourth resistor is connected to the low-level output end of the second switch serving as the signal generation unit.

7. The negative-pressure rapid self-establishment circuit and gate drive circuit based on bootstrap boost according to claim 6, characterized in that The bootstrap boost unit includes: a second diode and a third capacitor; One end of the third capacitor is connected to the cathode of the second diode to serve as the high potential of the high-voltage voltage source and is connected to one end of the first switch. The anode of the second diode is connected to the high potential end of the low-voltage power supply.

8. The negative pressure rapid self - establishment circuit and gate drive circuit based on bootstrap boost as claimed in claim 7, wherein The bootstrap boost unit further includes: a third resistor; One end of the third resistor is connected to the cathode of the second diode. The other end of the third resistor is connected to the third capacitor to serve as the high potential of the high-voltage voltage source.

9. The negative-pressure rapid self-establishment circuit and gate driving circuit based on bootstrap boost as claimed in claim 7, wherein When the gate drive circuit is two-way or drives a bridge circuit, the low-voltage power supply includes: a first voltage source; The first voltage source is used to provide the power supply voltage for the two-way gate drive circuit. The high potential of the first voltage source is connected to the anode of the second diode to serve as the high potential power supply of the low-voltage end. The low potential of the first voltage source is connected to the drive feedback loop of the low-voltage end to serve as the reference ground end of the gate drive loop of the low-voltage end.

10. The negative voltage rapid self-establishment circuit and gate drive circuit based on bootstrap boost according to any one of claims 1-8, characterized in that The switching device unit includes, but is not limited to, one or more switches such as metal oxide semiconductor field effect transistor (MOSFET), insulated gate bipolar transistor (IGBT), thyristor, and high electron mobility transistor (HEMT); the manufacturing materials of the switches include, but are not limited to, one or more of silicon, compound silicon carbide, gallium nitride, gallium oxide, aluminum nitride, and diamond.

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