How to measure the bevel angle

Abstract

The present application provides a method for measuring a bevel angle, comprising: providing a substrate to be tested; selecting a scanning point on the surface of the substrate to be tested; using an XRD single crystal tester to perform a rocking curve scan on a preset crystal plane of the substrate to be tested based on the scanning point to obtain a measurement value; adjusting and setting the XRD single crystal tester so that the incident light used for performing a rocking curve scan on the substrate to be tested is only emitted on the surface of the substrate to be tested without diffraction; using the adjusted XRD single crystal tester to perform a rocking curve scan on the preset crystal plane of the substrate to be tested to obtain a placement deviation; based on the measurement value and the placement deviation, obtaining the bevel angle of the substrate to be tested. In the above bevel angle measurement method, a precise bevel angle can be obtained.

Description

Technical Field

[0001] The present application relates to the field of semiconductor technology, and in particular to a method for measuring a bevel angle. Background Art

[0002] At present, it is generally necessary to use an XRD single crystal tester to measure the offcut angle of the substrate. However, in the process of measuring the offcut angle of the substrate, since the substrate itself has a certain warping, and after the substrate is placed on the stage of the XRD single crystal tester, the substrate and the stage of the XRD single crystal tester are not completely fitted, the measurement result is inevitably biased, and it is impossible to obtain an accurate offcut angle. Summary of the invention

[0003] In view of the problem that when measuring the bevel angle of a substrate in the prior art, the measurement result inevitably has deviations and the accurate bevel angle cannot be obtained, a method for measuring the bevel angle is provided.

[0004] The present application provides a method for measuring a bevel angle, comprising:

[0005] Providing a substrate to be tested;

[0006] Selecting a scanning point on the surface of the substrate to be tested;

[0007] Using an XRD single crystal tester to perform a rocking curve scan on a preset crystal plane of the substrate to be tested based on the scanning point to obtain a measurement value;

[0008] The XRD single crystal tester is adjusted and set so that the incident light used for performing rocking curve scanning on the substrate to be tested is only emitted on the surface of the substrate to be tested without diffraction;

[0009] Using an XRD single crystal tester with adjusted settings to perform a rocking curve scan on the preset crystal plane of the substrate to be tested to obtain a placement deviation;

[0010] Based on the measurement value and the placement deviation, the bevel angle of the substrate to be measured is obtained.

[0011] In the above-mentioned bevel angle measurement method, after using the XRD single crystal tester to measure the bevel angle of the substrate to be tested to obtain the measured value, the XRD single crystal tester is adjusted and set to measure the placement deviation, and then the accurate bevel angle can be obtained based on the measured value and the placement deviation.

[0012] In one embodiment, the XRD single crystal tester includes a light source generator, a distance is provided between the light source generator and the substrate to be tested, and the light source generator is used to emit the incident light; the incident angle of the incident light incident on the upper surface of the substrate to be tested is greater than 0° and less than or equal to 1°; adjusting and setting the XRD single crystal tester includes:

[0013] A slit device is placed between the light source generator and the substrate to be tested, and the slit width of the slit device is 1 / 32 to 1 / 8 of the wavelength of the incident light.

[0014] In one embodiment, the step of using an XRD single crystal tester to perform a rocking curve scan on a preset crystal plane of the substrate to be tested based on the scanning point to obtain a measurement value includes:

[0015] Rotating the substrate to be tested by a first preset angle in the XY plane, using an XRD single crystal tester to perform a rocking curve scan of the preset crystal plane on the substrate to be tested based on the scanning point to obtain a rocking curve of this step, and recording a first scanning angle corresponding to a peak value of the rocking curve obtained in this step;

[0016] Rotating the substrate to be tested after being rotated by the first preset angle by a second preset angle in the XY plane, and again using the XRD single crystal tester to perform a rocking curve scan of the preset crystal plane on the substrate to be tested based on the scanning point to obtain a rocking curve of this step, and recording a second scanning angle corresponding to a peak value of the rocking curve obtained in this step;

[0017] The first scanning angle is subtracted from the correction coefficient to obtain a first measurement value; and the second scanning angle is subtracted from the correction coefficient to obtain a second measurement value.

[0018] In one embodiment, the step of performing a rocking curve scan on the preset crystal plane of the substrate to be tested using an XRD single crystal tester with adjusted settings to obtain a placement deviation includes:

[0019] Rotate the substrate to be tested by the first preset angle in the XY plane, use an XRD single crystal tester to perform a rocking curve scan of the preset crystal plane on the substrate to be tested based on the scanning point to obtain a rocking curve of this step, and record a third scanning angle corresponding to a peak value of the rocking curve obtained in this step, wherein the third scanning angle is a first placement deviation corresponding to the first measurement value;

[0020] The substrate to be tested is rotated by the second preset angle in the XY plane after being rotated by the first preset angle, and the XRD single crystal tester is used again to scan the rocking curve of the preset crystal plane of the substrate to be tested based on the scanning point to obtain the rocking curve of this step, and the fourth scanning angle corresponding to the peak value of the rocking curve obtained in this step is recorded, and the fourth scanning angle is the second placement deviation corresponding to the second measurement value.

[0021] In one of the embodiments, the preset crystal plane is a (002) crystal plane; the first preset angle is 0° to 270°, the second preset angle is 90°; and the correction coefficient is 17.28335.

[0022] In one embodiment, obtaining the bevel angle of the substrate to be tested based on the measurement value and the placement deviation includes:

[0023] Subtracting the first placement deviation from the first measurement value to obtain a first corrected bevel angle;

[0024] Subtracting the second placement deviation from the second measured value to obtain a second corrected bevel angle;

[0025] The first corrected bevel angle and the second corrected bevel angle are vector-converted to obtain the bevel angle of the substrate to be measured.

[0026] In one embodiment, performing vector conversion on the first corrected bevel angle and the second corrected bevel angle to obtain the bevel angle of the substrate to be measured includes: performing vector conversion on the first corrected bevel angle and the second corrected bevel angle based on the following formula:

[0027]

[0028] Wherein, offcut is the bevel angle of the substrate to be measured; 17.28335 is the correction coefficient; θ1 is the first scanning angle; θ 1' is the third scanning angle; θ2 is the second scanning angle; θ 2' is the fourth scanning angle.

[0029] In one embodiment, the step of using an XRD single crystal tester to perform a rocking curve scan on a preset crystal plane of the substrate to be tested based on the scanning point to obtain a measurement value includes:

[0030] Rotating the substrate to be tested by a first preset angle in the XY plane, using an XRD single crystal tester to perform a rocking curve scan of the preset crystal plane on the substrate to be tested based on the scanning point to obtain a rocking curve of this step, and recording a first scanning angle corresponding to a peak value of the rocking curve obtained in this step;

[0031] Rotating the substrate to be tested after rotating the first preset angle by a second preset angle in the XY plane, and performing a rocking curve scan of the preset crystal plane on the substrate to be tested based on the scanning point using an XRD single crystal tester again to obtain a rocking curve of this step, and recording a second scanning angle corresponding to a peak value of the rocking curve obtained in this step;

[0032] After rotating the substrate to be tested once by the second preset angle, the substrate to be tested is rotated again by the second preset angle in the XY plane, and the XRD single crystal tester is used again to perform a rocking curve scan of the preset crystal plane on the substrate to be tested based on the scanning point to obtain a rocking curve of this step, and a third scanning angle corresponding to the peak value of the rocking curve obtained in this step is recorded;

[0033] After rotating the substrate to be tested twice by the second preset angle, the substrate to be tested is rotated again by the second preset angle in the XY plane, and the XRD single crystal tester is used again to perform a rocking curve scan of the preset crystal plane on the substrate to be tested based on the scanning point to obtain a rocking curve of this step, and a fourth scanning angle corresponding to the peak value of the rocking curve obtained in this step is recorded;

[0034] The first scanning angle is subtracted from the correction coefficient to obtain a first measurement value; the second scanning angle is subtracted from the correction coefficient to obtain a second measurement value; the third scanning angle is subtracted from the correction coefficient to obtain a third measurement value; and the fourth scanning angle is subtracted from the correction coefficient to obtain a fourth measurement value.

[0035] In one embodiment, the step of performing a rocking curve scan on the preset crystal plane of the substrate to be tested using an XRD single crystal tester with adjusted settings to obtain a placement deviation includes:

[0036] Rotate the substrate to be tested by the first preset angle in the XY plane, use an XRD single crystal tester to perform a rocking curve scan of the preset crystal plane on the substrate to be tested based on the scanning point to obtain a rocking curve of this step, and record a fifth scanning angle corresponding to a peak value of the rocking curve obtained in this step, wherein the fifth scanning angle is a first placement deviation corresponding to the first measurement value;

[0037] Rotating the substrate to be tested after being rotated by the first preset angle in the XY plane by the second preset angle, and again using the XRD single crystal tester to perform a rocking curve scan of the preset crystal plane on the substrate to be tested based on the scanning point to obtain the rocking curve of this step, and recording a sixth scanning angle corresponding to the peak value of the rocking curve obtained in this step, wherein the sixth scanning angle is the second placement deviation corresponding to the second measurement value;

[0038] After rotating the substrate to be tested once by the second preset angle, the substrate to be tested is rotated again by the second preset angle in the XY plane, and the XRD single crystal tester is used again to perform a rocking curve scan of the preset crystal plane on the substrate to be tested based on the scanning point to obtain the rocking curve of this step, and a seventh scanning angle corresponding to the peak value of the rocking curve obtained in this step is recorded, and the seventh scanning angle is the third placement deviation corresponding to the third measurement value;

[0039] After rotating the substrate to be tested twice by the second preset angle, the substrate to be tested is rotated again by the second preset angle in the XY plane, and the XRD single crystal tester is used again to perform a rocking curve scan of the preset crystal plane on the substrate to be tested based on the scanning point to obtain the rocking curve of this step, and the eighth scanning angle corresponding to the peak value of the rocking curve obtained in this step is recorded, and the eighth scanning angle is the fourth placement deviation corresponding to the fourth measurement value.

[0040] In one example, the preset crystal plane is the (002) crystal plane; the first preset angle is 0° to 90°, and the second preset angle is 90°; and the correction coefficient is 17.28335.

[0041] In one example, obtaining the bevel angle of the substrate to be tested based on the measurement value and the placement deviation includes:

[0042] Subtracting the first placement deviation from the first measurement value to obtain a first corrected bevel angle;

[0043] Subtracting the second placement deviation from the second measured value to obtain a second corrected bevel angle;

[0044] Subtracting the third placement deviation from the third measurement value to obtain a third corrected bevel angle;

[0045] Subtracting the fourth placement deviation from the fourth measurement value to obtain a fourth corrected bevel angle;

[0046] The first corrected bevel angle, the second corrected bevel angle, the third corrected bevel angle and the fourth corrected bevel angle are vector-converted to obtain the bevel angle of the substrate to be measured.

[0047] In one example, performing vector conversion on the first corrected bevel angle, the second corrected bevel angle, the third corrected bevel angle, and the fourth corrected bevel angle to obtain the bevel angle of the substrate to be measured includes: performing vector conversion on the first corrected bevel angle, the second corrected bevel angle, the third corrected bevel angle, and the fourth corrected bevel angle based on the following formula:

[0048]

[0049] Wherein, offcut is the bevel angle of the substrate to be tested; 17.28335 is the correction coefficient; θ n° is the first scanning angle; θ (n+90)° is the second scanning angle; θ (n+180)° is the third scanning angle; θ (n+270) ° is the fourth scanning angle; θ n°‘ is the fifth scanning angle; θ (n+90)°’ is the sixth scanning angle; θ (n+180)°’ is the seventh scanning angle; θ (n+270)°’ It is the eighth scanning angle. BRIEF DESCRIPTION OF THE DRAWINGS

[0050] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the conventional technology, the drawings required for use in the embodiments or the conventional technology descriptions are briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0051] Figure 1 A flow chart of a method for measuring a bevel angle provided in the present application;

[0052] Figure 2 This is a flow chart of step S30 in the bevel angle measurement method provided in one embodiment of the present application;

[0053] Figure 3 This is a flow chart of step S50 in the bevel angle measurement method provided in one embodiment of the present application;

[0054] Figure 4 This is a flow chart of step S30 in the bevel angle measurement method provided in another embodiment of the present application;

[0055] Figure 5 This is a flowchart of step S50 in a method for measuring a bevel angle provided in another embodiment of the present application. DETAILED DESCRIPTION

[0056] In order to facilitate understanding of the present application, the present application will be described more fully below with reference to the relevant drawings. Embodiments of the present application are provided in the drawings. However, the present application can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the disclosure of the present application more thorough and comprehensive.

[0057] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art to which this application belongs. The terms used herein in the specification of this application are only for the purpose of describing specific embodiments and are not intended to limit this application.

[0058] It can be understood that the terms "first", "second", etc. used in the present application can be used in this article to describe various elements, but these elements are not limited by these terms. These terms are only used to distinguish the first element from another element.

[0059] It can be understood that the “connection” in the following embodiments should be understood as “electrical connection”, “communication connection”, etc. if the connected circuits, modules, units, etc. have electrical signals or data transmission between each other.

[0060] When used herein, the singular forms "a", "an", and "said / the" may also include plural forms, unless the context clearly indicates otherwise. It should also be understood that the terms "include / comprise" or "have" etc. specify the presence of stated features, wholes, steps, operations, components, parts or combinations thereof, but do not exclude the possibility of the presence or addition of one or more other features, wholes, steps, operations, components, parts or combinations thereof.

[0061] See also Figure 1 The present application provides a method for measuring a bevel angle, and the method for measuring a bevel angle may include the following steps:

[0062] S10: providing a substrate to be tested;

[0063] S20: Selecting a scanning point on the surface of the substrate to be tested;

[0064] S30: using an XRD single crystal tester to perform a rocking curve scan on a preset crystal plane of the substrate to be tested based on a scanning point to obtain a measurement value;

[0065] S40: adjusting and setting the XRD single crystal tester so that the incident light for performing rocking curve scanning on the substrate to be tested is only emitted on the surface of the substrate to be tested, and no diffraction occurs;

[0066] S50: using the XRD single crystal tester with adjusted settings to perform a rocking curve scan on the preset crystal plane of the substrate to be tested to obtain a placement deviation;

[0067] S60: Obtaining the bevel angle of the substrate to be measured based on the measurement value and the placement deviation.

[0068] In the above-mentioned bevel angle measurement method, after using the XRD single crystal tester to measure the bevel angle of the substrate to be tested to obtain the measured value, the XRD single crystal tester is adjusted and set to measure the placement deviation, and then the accurate bevel angle can be obtained based on the measured value and the placement deviation.

[0069] In step S10, refer to Figure 1 In step S10, a substrate to be tested is provided.

[0070] Specifically, the substrate to be tested has a bevel angle.

[0071] More specifically, the substrate to be tested may include but is not limited to a gallium nitride substrate.

[0072] In step S20, refer to Figure 1 In step S20, a scanning point is selected on the surface of the substrate to be tested.

[0073] Specifically, in one example, any point on the upper surface of the substrate to be tested can be selected as the scanning point; for example, the center point of the upper surface of the substrate to be tested can be selected as the scanning point; of course, in other examples, the scanning point can also be any point on the upper surface of the substrate to be tested, which is not limited here.

[0074] More specifically, in one example, the scanning point may be recorded as point A, and in the XY plane, the coordinates of point A are (x, y). It should be noted that the XY plane may be the plane where the upper surface of the substrate to be measured is located.

[0075] In step S30, refer to Figure 1 In S30, a rocking curve scan is performed on a preset crystal plane of the substrate to be tested based on a scanning point using an XRD single crystal tester to obtain a measurement value.

[0076] In an alternative example, see Figure 2 In step S30, using an XRD single crystal tester to perform a rocking curve scan on a preset crystal plane of the substrate to be tested based on a scanning point to obtain a measurement value may include the following steps:

[0077] S301: rotating the substrate to be tested by a first preset angle in the XY plane, using an XRD single crystal tester to perform a rocking curve scan of a preset crystal plane on the substrate to be tested based on a scanning point to obtain a rocking curve of this step, and recording a first scanning angle corresponding to a peak value of the rocking curve obtained in this step;

[0078] S302: rotating the substrate to be tested after being rotated by the first preset angle by a second preset angle in the XY plane, and again using the XRD single crystal tester to perform a rocking curve scan of a preset crystal plane on the substrate to be tested based on the scanning point to obtain a rocking curve of this step, and recording the second scanning angle corresponding to the peak value of the rocking curve obtained in this step;

[0079] S303: Using the correction coefficient to subtract the first scanning angle to obtain a first measurement value; using the correction coefficient to subtract the second scanning angle to obtain a second measurement value.

[0080] Specifically, in step S301, the substrate to be tested is first placed on an XRD single crystal tester, and then the substrate to be tested is rotated by a first preset angle in an XY plane.

[0081] In one example, the value range of the first preset angle can be 0° to 270°; specifically, the first preset angle can be 10°, 30°, 60°, 90°, 120°, 150°, 180°, 200°, 230° or 270°, etc.

[0082] In one example, the preset crystal plane may be but is not limited to a (002) crystal plane.

[0083] Specifically, in this embodiment, the first preset angle may be m°, and the first scanning angle may be recorded as θ1.

[0084] Specifically, in step S302, the second preset angle may be 90°.

[0085] More specifically, the second preset angle may be recorded as (m+90)°, and the second scanning angle may be recorded as θ2.

[0086] In step S303, the correction coefficient may be 17.28335.

[0087] Specifically, the first measured value is 17.28335-θ1, and the second measured value is 17.28335-θ2. The first measured value and the second measured value are inaccurate bevel angle values ​​in two directions perpendicular to each other.

[0088] It should be noted that, in the process of measuring the bevel angle of the substrate to be tested, since the substrate to be tested itself has a certain warping, and after the substrate to be tested is placed on the stage of the XRD single crystal tester, the substrate to be tested and the stage of the XRD single crystal tester are not completely in contact, there will inevitably be a placement deviation; the measurement value at this time is the sum of the bevel angle of the substrate to be tested and the placement deviation; specifically, the first measurement value and the second measurement value are respectively the sum of the bevel angle of the substrate to be tested in two directions perpendicular to each other and the placement deviation.

[0089] In step S40, refer to Figure 1 In S40, the XRD single crystal tester is adjusted and set so that the incident light used for rocking curve scanning of the substrate to be tested is only emitted on the surface of the substrate to be tested without diffraction.

[0090] In one example, an XRD single crystal tester includes a light source generator, a distance between the light source generator and the substrate to be tested is provided, and the light source generator is used to emit incident light; the incident angle of the incident light incident on the upper surface of the substrate to be tested is greater than 0° and less than or equal to 1°.

[0091] In one example, in step S40, adjusting and setting the XRD single crystal tester includes:

[0092] A slit device is placed between the light source generator and the substrate to be tested, and the slit width of the slit device is 1 / 32 to 1 / 8 of the wavelength of the incident light.

[0093] Specifically, the slit device can be arranged close to the light source generator.

[0094] Specifically, the slit width of the slit device may be 1 / 32, 1 / 16 or 1 / 8 of the wavelength of the incident light, etc.

[0095] In the above example, by providing a slit device and setting the incident angle of the incident light to the above smaller range, it can be ensured that the incident light only forms reflected light on the substrate to be tested, and no diffracted light is formed.

[0096] In step S50, refer to Figure 1 In step S50, a rocking curve scan is performed on the preset crystal plane of the substrate to be tested using an XRD single crystal tester with adjusted settings to obtain a placement deviation.

[0097] In an example, see Figure 3 In step S50, a rocking curve scan is performed on a preset crystal plane of the substrate to be tested using an XRD single crystal tester with adjusted settings to obtain a placement deviation, including:

[0098] S501: rotating the substrate to be tested by a first preset angle in the XY plane, using an XRD single crystal tester to perform a rocking curve scan of a preset crystal plane on the substrate to be tested based on a scanning point, so as to obtain a rocking curve of this step, and recording a third scanning angle corresponding to a peak value of the rocking curve obtained in this step, where the third scanning angle is a first placement deviation corresponding to the first measurement value;

[0099] S502: Rotate the substrate to be tested by a first preset angle to a second preset angle in the XY plane, and use the XRD single crystal tester again to scan the rocking curve of the preset crystal plane of the substrate to be tested based on the scanning point to obtain the rocking curve of this step, and record the fourth scanning angle corresponding to the peak value of the rocking curve obtained in this step. The third scanning angle is the second placement deviation corresponding to the second measurement value.

[0100] In one example, the first placement deviation can be denoted as θ 1' , the second placement deviation can be recorded as θ 2' The first placement deviation and the second placement deviation are two placement deviations of the substrate to be measured in two directions perpendicular to each other.

[0101] In step S60, refer to Figure 1 In step S60, the bevel angle of the substrate to be measured is obtained based on the measurement value and the placement deviation.

[0102] In one example, in step S60, obtaining the bevel angle of the substrate to be measured based on the measurement value and the placement deviation may include:

[0103] S601: subtracting a first placement deviation from a first measurement value to obtain a first corrected bevel angle;

[0104] S602: Subtracting a second placement deviation from a second measured value to obtain a second corrected bevel angle;

[0105] S603: performing vector conversion on the first corrected bevel angle and the second corrected bevel angle to obtain the bevel angle of the substrate to be measured.

[0106] Specifically, the first scanning angle is recorded as θ1, the first measured value is recorded as 17.28335-θ1, and the third scanning angle can be recorded as θ 1' For example, the first corrected bevel angle is 17.28335-θ1-θ 1' The second scanning angle is recorded as θ2, the second measured value is recorded as 17.28335-θ2, and the fourth scanning angle can be recorded as θ 2' For example, the second corrected bevel angle is 17.28335-θ2-θ 2' .

[0107] In one example, in step S603, performing vector conversion on the first corrected bevel angle and the second corrected bevel angle to obtain the bevel angle of the substrate to be measured includes: performing vector conversion on the first corrected bevel angle and the second corrected bevel angle based on the following formula:

[0108]

[0109] Wherein, offcut is the bevel angle of the substrate to be measured; 17.28335 is the correction coefficient; θ1 is the first scanning angle; θ 1' is the third scanning angle; θ2 is the second scanning angle; θ 2' is the fourth scanning angle.

[0110] Specifically, the direction of the coordinate formed by the two perpendicular directions of the bevel angle at the scanning point A is & = sin(17.28335-θ2-θ 2' ) / (17.28335-θ1-θ 1' ).

[0111] In another embodiment, see Figure 4 In step S30, using an XRD single crystal tester to perform a rocking curve scan on a preset crystal plane of the substrate to be tested based on a scanning point to obtain a measurement value may include the following steps:

[0112] S301: rotating the substrate to be tested by a first preset angle in the XY plane, using an XRD single crystal tester to perform a rocking curve scan of a preset crystal plane on the substrate to be tested based on a scanning point to obtain a rocking curve of this step, and recording a first scanning angle corresponding to a peak value of the rocking curve obtained in this step;

[0113] S302: rotating the substrate to be tested after being rotated by the first preset angle by a second preset angle in the XY plane, and performing a rocking curve scan of the preset crystal plane on the substrate to be tested based on the scanning point using the XRD single crystal tester again to obtain a rocking curve of this step, and recording the second scanning angle corresponding to the peak value of the rocking curve obtained in this step;

[0114] S303: rotating the substrate to be tested once by the second preset angle by another second preset angle in the XY plane, and performing a rocking curve scan of a preset crystal plane on the substrate to be tested based on the scanning point using the XRD single crystal tester again to obtain a rocking curve of this step, and recording a third scanning angle corresponding to the peak value of the rocking curve obtained in this step;

[0115] S304: rotating the substrate to be tested twice by the second preset angle again by the second preset angle in the XY plane, and performing a rocking curve scan of a preset crystal plane on the substrate to be tested based on the scanning point using the XRD single crystal tester again to obtain a rocking curve of this step, and recording a fourth scanning angle corresponding to the peak value of the rocking curve obtained in this step;

[0116] S305: Use the correction coefficient to subtract the first scanning angle to obtain a first measurement value; use the correction coefficient to subtract the second scanning angle to obtain a second measurement value; use the correction coefficient to subtract the third scanning angle to obtain a third measurement value; use the correction coefficient to subtract the fourth scanning angle to obtain a fourth measurement value.

[0117] Specifically, in step S301, the substrate to be tested is first placed on an XRD single crystal tester, and then the substrate to be tested is rotated by a first preset angle in an XY plane.

[0118] In one example, the first preset angle is 0° to 90°; specifically, the first preset angle may be 0°, 10°, 20°, 30°, 40°, 50°, 60°, 70°, 80° or 90°, etc.

[0119] Specifically, in this embodiment, the first preset angle may be n°, and the first scanning angle may be denoted as θ n° .

[0120] Specifically, in step S302, the second preset angle may be 90°.

[0121] More specifically, the second preset angle may be recorded as (n+90)°, and the second scanning angle may be recorded as θ (n+90)° .

[0122] Specifically, in step S303, the third preset angle can be recorded as (n+180)°, and the third scanning angle can be recorded as θ (n+180)° .

[0123] Specifically, in step S304, the fourth preset angle can be recorded as (n+270)°, and the fourth scanning angle can be recorded as θ (n+270)° .

[0124] In step S305, the correction coefficient may be 17.28335.

[0125] Specifically, the first measured value is 17.28335-θ n° , the second measured value is 17.28335-θ (n+90)° , the third measured value is 17.28335-θ (n+180)° , the fourth measured value is 17.28335-θ (n+270)° The first measurement value and the second measurement value are inaccurate bevel angle values ​​in four directions perpendicular to each other.

[0126] The first measurement value, the second measurement value, the third measurement value and the fourth measurement value are respectively the sum of the bevel angles of the substrate to be measured in four directions perpendicular to each other and the placement deviations.

[0127] In one embodiment, see Figure 5 In step S50, using the adjusted XRD single crystal tester to perform rocking curve scanning on the preset crystal plane of the substrate to be tested to obtain the placement deviation may include the following steps:

[0128] S501: rotating the substrate to be tested by a first preset angle in the XY plane, using an XRD single crystal tester to perform a rocking curve scan of the preset crystal plane on the substrate to be tested based on a scanning point to obtain a rocking curve of this step, and recording a fifth scanning angle corresponding to a peak value of the rocking curve obtained in this step, where the fifth scanning angle is a first placement deviation corresponding to the first measurement value;

[0129] S502: rotating the substrate to be tested after being rotated by the first preset angle by a second preset angle in the XY plane, and performing a rocking curve scan of a preset crystal plane on the substrate to be tested based on the scanning point using the XRD single crystal tester again to obtain a rocking curve of this step, and recording a sixth scanning angle corresponding to the peak value of the rocking curve obtained in this step, where the sixth scanning angle is the second placement deviation corresponding to the second measurement value;

[0130] S503: rotating the substrate to be tested once at the second preset angle again at the second preset angle in the XY plane, and performing a rocking curve scan of a preset crystal plane on the substrate to be tested based on the scanning point using the XRD single crystal tester again to obtain the rocking curve of this step, and recording a seventh scanning angle corresponding to the peak value of the rocking curve obtained in this step, where the seventh scanning angle is the third placement deviation corresponding to the third measurement value;

[0131] S504: After rotating the substrate to be tested twice by the second preset angle, rotate it again by the second preset angle in the XY plane, and use the XRD single crystal tester again to scan the rocking curve of the preset crystal plane of the substrate to be tested based on the scanning point to obtain the rocking curve of this step, and record the eighth scanning angle corresponding to the peak value of the rocking curve obtained in this step, where the eighth scanning angle is the fourth placement deviation corresponding to the fourth measurement value.

[0132] In one example, the first placement deviation can be denoted as θ n°‘ , the second placement deviation can be recorded as θ (n+90)°’ , the third placement deviation can be recorded as θ (n+180)°’ , the fourth placement deviation can be recorded as θ (n+270)°’ The first placement deviation, the second placement deviation, the third placement deviation and the fourth placement deviation are placement deviations of the substrate to be tested in four directions perpendicular to each other.

[0133] In one example, in step S60, obtaining the bevel angle of the substrate to be measured based on the measurement value and the placement deviation may include:

[0134] S601: subtracting a first placement deviation from a first measurement value to obtain a first corrected bevel angle;

[0135] S602: Subtracting a second placement deviation from a second measured value to obtain a second corrected bevel angle;

[0136] S603: Subtracting a third placement deviation from the third measurement value to obtain a third corrected bevel angle;

[0137] S604: Subtracting a fourth placement deviation from the fourth measurement value to obtain a fourth corrected bevel angle;

[0138] S605: performing vector conversion on the first corrected bevel angle, the second corrected bevel angle, the third corrected bevel angle, and the fourth corrected bevel angle to obtain the bevel angle of the substrate to be measured.

[0139] Specifically, the first scanning angle is denoted as θ n° , the first measured value is recorded as 17.28335-θ n° , the fifth scanning angle can be recorded as θ n°‘ For example, the first corrected bevel angle is 17.28335-θ n° -θ n°‘' The second scanning angle is denoted as θ (n+90)° , the second measured value is recorded as 17.28335-θ (n+90)° , the sixth scanning angle can be recorded as θ (n+90)°’ For example, the second corrected bevel angle is 17.28335-θ (n+90)° -θ (n+90)°’' The third scanning angle is denoted as θ (n+180)° , the third measurement value is recorded as 17.28335-θ (n+180)° , the seventh scanning angle can be recorded as θ (n+180)°’ For example, the third corrected bevel angle is 17.28335-θ (n+180)° -θ (n+180)°’' The fourth scanning angle is denoted as θ (n+270)° , the fourth measurement value is recorded as 17.28335-θ (n+270)° , the eighth scanning angle can be recorded as θ (n+270)°’ For example, the fourth modified bevel angle is 17.28335-θ (n+270)° -θ (n+270)°’' .

[0140] In step S605, performing vector conversion on the first corrected bevel angle, the second corrected bevel angle, the third corrected bevel angle, and the fourth corrected bevel angle to obtain the bevel angle of the substrate to be measured may include: converting the first corrected bevel angle, the second corrected bevel angle, the third corrected bevel angle, and the fourth corrected bevel angle in four mutually perpendicular directions into values ​​in two mutually perpendicular directions, and then performing vector conversion.

[0141] Specifically, the first corrected bevel angle, the second corrected bevel angle, the third corrected bevel angle, and the fourth corrected bevel angle may be converted into vectors based on the following formula:

[0142]

[0143] Where, offcut is the bevel angle of the substrate to be measured; 17.28335 is the correction factor; θ n° is the first scanning angle; θ (n+90)° is the second scanning angle; θ (n+180)° is the third scanning angle; θ (n+270)° is the fourth scanning angle; θ n°‘ is the fifth scanning angle; θ (n+90)°’ is the sixth scanning angle; θ (n+180)°’ is the seventh scanning angle; θ (n+270)°’ It is the eighth scanning angle.

[0144] In the description of this specification, the description with reference to the terms "one of the embodiments", "other embodiments", etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic description of the above terms does not necessarily refer to the same embodiment or example.

[0145] The technical features of the above-mentioned embodiments can be combined arbitrarily. To make the description concise, not all possible combinations of the technical features in the above-mentioned embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0146] The above-mentioned embodiments only express several implementation methods of the present invention, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as limiting the scope of the invention patent. It should be pointed out that, for ordinary technicians in this field, several variations and improvements can be made without departing from the concept of the present invention, and these all belong to the protection scope of the present invention. Therefore, the protection scope of the patent of the present invention shall be subject to the attached claims.

Claims

1. A method for measuring a bevel angle, characterized in that: include: Providing a substrate to be tested; Selecting a scanning point on the surface of the substrate to be tested; Using an XRD single crystal tester to perform a rocking curve scan on a preset crystal plane of the substrate to be tested based on the scanning point to obtain a measurement value; The XRD single crystal tester is adjusted and set so that the incident light used for performing rocking curve scanning on the substrate to be tested is only reflected on the surface of the substrate to be tested without diffraction; Using an XRD single crystal tester with adjusted settings to perform a rocking curve scan on the preset crystal plane of the substrate to be tested to obtain a placement deviation; Based on the measurement value and the placement deviation, the bevel angle of the substrate to be measured is obtained.

2. The method for measuring the bevel angle according to claim 1, characterized in that: The XRD single crystal tester comprises a light source generator, wherein there is a distance between the light source generator and the substrate to be tested, and the light source generator is used to emit the incident light; The incident angle of the incident light incident on the upper surface of the substrate to be measured is greater than 0° and less than or equal to 1°; Adjusting and setting the XRD single crystal tester includes: A slit device is placed between the light source generator and the substrate to be tested, and the slit width of the slit device is 1 / 32 to 1 / 8 of the wavelength of the incident light.

3. The method for measuring the bevel angle according to claim 1 or 2, characterized in that: The method of using an XRD single crystal tester to perform a rocking curve scan on a preset crystal plane of the substrate to be tested based on the scanning point to obtain a measurement value includes: Rotating the substrate to be tested by a first preset angle in the XY plane, using an XRD single crystal tester to perform a rocking curve scan of the preset crystal plane on the substrate to be tested based on the scanning point to obtain a rocking curve of this step, and recording a first scanning angle corresponding to a peak value of the rocking curve obtained in this step; Rotating the substrate to be tested after being rotated by the first preset angle by a second preset angle in the XY plane, and again using the XRD single crystal tester to perform a rocking curve scan of the preset crystal plane on the substrate to be tested based on the scanning point to obtain a rocking curve of this step, and recording a second scanning angle corresponding to a peak value of the rocking curve obtained in this step; The first scanning angle is subtracted from the correction coefficient to obtain a first measurement value; and the second scanning angle is subtracted from the correction coefficient to obtain a second measurement value.

4. The method for measuring the bevel angle according to claim 3, characterized in that: The step of using the XRD single crystal tester with adjusted settings to perform rocking curve scanning on the preset crystal plane of the substrate to be tested to obtain the placement deviation includes: Rotate the substrate to be tested by the first preset angle in the XY plane, use an XRD single crystal tester to perform a rocking curve scan of the preset crystal plane on the substrate to be tested based on the scanning point to obtain a rocking curve of this step, and record a third scanning angle corresponding to a peak value of the rocking curve obtained in this step, wherein the third scanning angle is a first placement deviation corresponding to the first measurement value; The substrate to be tested is rotated by the second preset angle in the XY plane after being rotated by the first preset angle, and the XRD single crystal tester is used again to scan the rocking curve of the preset crystal plane of the substrate to be tested based on the scanning point to obtain the rocking curve of this step, and the fourth scanning angle corresponding to the peak value of the rocking curve obtained in this step is recorded, and the fourth scanning angle is the second placement deviation corresponding to the second measurement value.

5. The method for measuring the bevel angle according to claim 4, characterized in that: The preset crystal plane is the (002) crystal plane; the first preset angle is 0° to 270°, and the second preset angle is 90°; and the correction coefficient is 17.28335.

6. The method for measuring the bevel angle according to claim 4, characterized in that: The step of obtaining the bevel angle of the substrate to be measured based on the measurement value and the placement deviation comprises: Subtracting the first placement deviation from the first measurement value to obtain a first corrected bevel angle; Subtracting the second placement deviation from the second measured value to obtain a second corrected bevel angle; The first corrected bevel angle and the second corrected bevel angle are vector-converted to obtain the bevel angle of the substrate to be measured.

7. The method for measuring the bevel angle according to claim 6, characterized in that: The performing vector conversion on the first corrected bevel angle and the second corrected bevel angle to obtain the bevel angle of the substrate to be measured comprises: performing vector conversion on the first corrected bevel angle and the second corrected bevel angle based on the following formula: Wherein, offcut is the bevel angle of the substrate to be measured; 17.28335 is the correction coefficient; θ1 is the first scanning angle; θ 1' is the third scanning angle; θ2 is the second scanning angle; θ 2' is the fourth scanning angle.

8. The method for measuring the bevel angle according to claim 1 or 2, characterized in that: The method of using an XRD single crystal tester to perform a rocking curve scan on a preset crystal plane of the substrate to be tested based on the scanning point to obtain a measurement value includes: Rotating the substrate to be tested by a first preset angle in the XY plane, using an XRD single crystal tester to perform a rocking curve scan of the preset crystal plane on the substrate to be tested based on the scanning point to obtain a rocking curve of this step, and recording a first scanning angle corresponding to a peak value of the rocking curve obtained in this step; Rotating the substrate to be tested after rotating the first preset angle by a second preset angle in the XY plane, and performing a rocking curve scan of the preset crystal plane on the substrate to be tested based on the scanning point using an XRD single crystal tester again to obtain a rocking curve of this step, and recording a second scanning angle corresponding to a peak value of the rocking curve obtained in this step; After rotating the substrate to be tested once by the second preset angle, the substrate to be tested is rotated again by the second preset angle in the XY plane, and the XRD single crystal tester is used again to perform a rocking curve scan of the preset crystal plane on the substrate to be tested based on the scanning point to obtain a rocking curve of this step, and a third scanning angle corresponding to the peak value of the rocking curve obtained in this step is recorded; After rotating the substrate to be tested twice by the second preset angle, the substrate to be tested is rotated again by the second preset angle in the XY plane, and the XRD single crystal tester is used again to perform a rocking curve scan of the preset crystal plane on the substrate to be tested based on the scanning point to obtain a rocking curve of this step, and a fourth scanning angle corresponding to the peak value of the rocking curve obtained in this step is recorded; The first scanning angle is subtracted from the correction coefficient to obtain a first measurement value; the second scanning angle is subtracted from the correction coefficient to obtain a second measurement value; the third scanning angle is subtracted from the correction coefficient to obtain a third measurement value; and the fourth scanning angle is subtracted from the correction coefficient to obtain a fourth measurement value.

9. The method for measuring the bevel angle according to claim 8, characterized in that: The step of using the XRD single crystal tester with adjusted settings to perform rocking curve scanning on the preset crystal plane of the substrate to be tested to obtain the placement deviation includes: Rotate the substrate to be tested by the first preset angle in the XY plane, use an XRD single crystal tester to perform a rocking curve scan of the preset crystal plane on the substrate to be tested based on the scanning point to obtain a rocking curve of this step, and record a fifth scanning angle corresponding to a peak value of the rocking curve obtained in this step, wherein the fifth scanning angle is a first placement deviation corresponding to the first measurement value; Rotating the substrate to be tested after being rotated by the first preset angle in the XY plane by the second preset angle, and again using the XRD single crystal tester to perform a rocking curve scan of the preset crystal plane on the substrate to be tested based on the scanning point to obtain the rocking curve of this step, and recording a sixth scanning angle corresponding to the peak value of the rocking curve obtained in this step, wherein the sixth scanning angle is the second placement deviation corresponding to the second measurement value; After rotating the substrate to be tested once by the second preset angle, the substrate to be tested is rotated again by the second preset angle in the XY plane, and the XRD single crystal tester is used again to perform a rocking curve scan of the preset crystal plane on the substrate to be tested based on the scanning point to obtain the rocking curve of this step, and a seventh scanning angle corresponding to the peak value of the rocking curve obtained in this step is recorded, and the seventh scanning angle is the third placement deviation corresponding to the third measurement value; After rotating the substrate to be tested twice by the second preset angle, the substrate to be tested is rotated again by the second preset angle in the XY plane, and the XRD single crystal tester is used again to perform a rocking curve scan of the preset crystal plane on the substrate to be tested based on the scanning point to obtain the rocking curve of this step, and the eighth scanning angle corresponding to the peak value of the rocking curve obtained in this step is recorded, and the eighth scanning angle is the fourth placement deviation corresponding to the fourth measurement value.

10. The method for measuring the bevel angle according to claim 9, characterized in that: The preset crystal plane is the (002) crystal plane; the first preset angle is 0° to 90°, and the second preset angle is 90°; and the correction coefficient is 17.28335.

11. The method for measuring the bevel angle according to claim 9, characterized in that: The step of obtaining the bevel angle of the substrate to be measured based on the measurement value and the placement deviation comprises: Subtracting the first placement deviation from the first measurement value to obtain a first corrected bevel angle; Subtracting the second placement deviation from the second measured value to obtain a second corrected bevel angle; Subtracting the third placement deviation from the third measurement value to obtain a third corrected bevel angle; Subtracting the fourth placement deviation from the fourth measurement value to obtain a fourth corrected bevel angle; The first corrected bevel angle, the second corrected bevel angle, the third corrected bevel angle and the fourth corrected bevel angle are vector-converted to obtain the bevel angle of the substrate to be measured.

12. The method for measuring the bevel angle according to claim 11, characterized in that: The step of performing vector conversion on the first corrected bevel angle, the second corrected bevel angle, the third corrected bevel angle, and the fourth corrected bevel angle to obtain the bevel angle of the substrate to be measured comprises: performing vector conversion on the first corrected bevel angle, the second corrected bevel angle, the third corrected bevel angle, and the fourth corrected bevel angle based on the following formula: Wherein, offcut is the bevel angle of the substrate to be tested; 17.28335 is the correction coefficient; θ n° is the first scanning angle; θ (n+90)° is the second scanning angle; θ (n+180)° is the third scanning angle; θ (n+270)° is the fourth scanning angle; θ n°‘ is the fifth scanning angle; θ (n+90)°’ is the sixth scanning angle; θ (n+180)°’ is the seventh scanning angle; θ (n+270)°’ It is the eighth scanning angle.

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