Display panel, manufacturing method thereof, and display device

Abstract

The present disclosure provides a display panel and a manufacturing method thereof, a display device, and relates to the field of display technology. The display panel includes: a driving backplane, having a display area and a peripheral area; a first electrode layer, including a switching electrode whose orthographic projection is located in the peripheral area; a pixel definition layer, located on the side of the first electrode layer away from the driving backplane; a light-emitting functional layer, located on the side of the pixel definition layer away from the driving backplane, and the orthographic projection of the switching electrode is located outside the orthographic projection of the light-emitting functional layer; a second electrode layer, located on the side of the light-emitting functional layer away from the driving backplane. In the embodiment of the present disclosure, when making the light-emitting functional layer, the overlapping area in the thickness direction between the portion of the first mask near the edge of the hole and the switching electrode can be effectively reduced, so that the formation of equivalent capacitance can be weakened, so as to weaken the phenomenon of releasing static charge at the edge of the hole when the first mask is removed, thereby improving the yield of the display panel.

Description

Technical Field

[0001] The present disclosure relates to the field of display technology, and in particular to a display panel and a manufacturing method thereof, and a display device. Background Art

[0002] In display technology, organic light emitting diode (OLED) display panels are recognized by the industry as the third generation display technology after liquid crystal displays (LCD) due to their many advantages, such as light weight, active luminescence, fast response speed, wide viewing angle, rich colors and high brightness, low power consumption, and high and low temperature resistance.

[0003] To enhance the display quality of display devices, during the manufacturing process of existing display panels, the mask for the light-emitting functional layer is placed as close to the substrate as possible to ensure the accuracy of the vapor deposition position. While this improves the accuracy of the vapor deposition position and the display quality of the display device, it also creates some new problems.

[0004] It should be noted that the information disclosed in the above background technology section is only used to enhance the understanding of the background of the present disclosure, and therefore may include information that does not constitute prior art known to ordinary technicians in the field. Summary of the Invention

[0005] The present disclosure aims to provide a display panel, a manufacturing method thereof, and a display device, which can improve the yield while ensuring the display effect.

[0006] According to a first aspect of the present disclosure, there is provided a display panel, comprising:

[0007] A driving backplane having a display area and a peripheral area located outside the display area;

[0008] A first electrode layer is located on one side of the driving backplane and includes a switching electrode whose orthographic projection is located in the peripheral area;

[0009] a pixel definition layer, located on a side of the first electrode layer facing away from the driving backplane;

[0010] a light-emitting functional layer, located on a side of the pixel definition layer facing away from the driving backplane, wherein the orthographic projection of the light-emitting functional layer covers the display area, and an edge of the orthographic projection of the light-emitting functional layer is located in the non-display area, and the orthographic projection of the switching electrode is located outside the orthographic projection of the light-emitting functional layer;

[0011] The second electrode layer is located on a side of the light-emitting functional layer away from the driving backplane and is connected to the switching electrode.

[0012] According to any one of the display panels described in the present disclosure, the light-emitting functional layer includes:

[0013] a first common film layer, located on a side of the pixel definition layer facing away from the driving backplane, wherein an orthographic projection of the first common film layer covers the display area, an edge of the orthographic projection of the first common film layer is located in the non-display area, and the orthographic projection of the switching electrode is located outside the orthographic projection of the first common film layer;

[0014] a luminescent material layer, located on a side of the first common film layer facing away from the driving backplane, and comprising a plurality of luminescent material units whose orthographic projections are located in the display area;

[0015] The second common film layer is located on the side of the light-emitting layer material layer away from the driving backplane, the orthographic projection of the second common film layer covers the display area, and the edge of the orthographic projection of the second common film layer is located in the non-display area, and the orthographic projection of the switching electrode is located outside the orthographic projection of the second common film layer.

[0016] According to any one of the display panels of the present disclosure, the switching electrode has a first edge close to the display area and a second edge away from the display area;

[0017] A distance between an edge of an orthographic projection of the light-emitting functional layer and an orthographic projection of the first edge is greater than or equal to 20 micrometers.

[0018] According to any display panel described in the present disclosure, the distance between the edge of the orthographic projection of the light-emitting functional layer and the edge of the display area is greater than or equal to 60 micrometers and less than or equal to 180 micrometers.

[0019] According to any display panel described in the present disclosure, the distance between the orthographic projection of the first edge and the edge of the display area is greater than or equal to 160 micrometers and less than or equal to 200 micrometers.

[0020] According to any display panel described in the present disclosure, the edge of the orthographic projection of the pixel definition layer is located between the orthographic projections of the first edge and the second edge.

[0021] According to any display panel described in the present disclosure, the distance between the edge of the orthographic projection of the pixel definition layer and the orthographic projection of the first edge is greater than or equal to 20 microns.

[0022] According to any one of the display panels of the present disclosure, the switching electrode has a first edge close to the display area;

[0023] The distance between the edge of the orthographic projection of the light-emitting functional layer and the edge of the display area is a first distance, and the distance between the orthographic projection of the first edge and the edge of the display area is a second distance;

[0024] The second distance is greater than the first distance, and a ratio of the second distance to the first distance is greater than or equal to 1.1 and less than or equal to 1.5.

[0025] According to any one of the display panels of the present disclosure, a distance between an edge of the orthographic projection of the pixel definition layer and an edge of the display area is a third distance;

[0026] The third distance is greater than the second distance, and a ratio of the third distance to the second distance is greater than or equal to 1.1 and less than or equal to 1.5.

[0027] According to a second aspect of the present disclosure, a method for manufacturing a display panel is provided, the method comprising:

[0028] Manufacturing a driving backplane, wherein the driving backplane has a display area and a peripheral area located outside the display area;

[0029] A first electrode layer is formed on one side of the driving backplane, wherein the first electrode layer includes a switching electrode whose orthographic projection is located in the peripheral area;

[0030] forming a pixel definition layer on a side of the first electrode layer facing away from the driving backplane;

[0031] A light-emitting functional layer is formed on a side of the pixel definition layer facing away from the driving backplane using at least one mask, wherein the orthographic projection of the light-emitting functional layer covers the display area, and the edge of the orthographic projection of the light-emitting functional layer is located in the non-display area, and the orthographic projection of the switching electrode is located outside the orthographic projection of the light-emitting functional layer;

[0032] A second electrode layer is formed on a side of the light-emitting functional layer away from the driving backplane. The second electrode layer at least covers the light-emitting functional layer and is connected to the switching electrode.

[0033] According to any of the methods described in the present disclosure, the step of forming a light-emitting functional layer on a side of the pixel definition layer facing away from the driving backplane using a mask comprises:

[0034] A first mask is provided on a side of the pixel definition layer facing away from the driving backplane, and a first common film layer is formed using the first mask, wherein the first mask has a first evaporation hole, an orthographic projection of the first evaporation hole covers the display area, an edge of the orthographic projection of the first evaporation hole is located in the non-display area, and an orthographic projection of the transfer electrode is located outside the orthographic projection of the first evaporation hole;

[0035] A second mask is provided on a side of the first common film layer facing away from the driving backplane, and a light-emitting material layer is formed through the second mask, wherein the second mask has a plurality of second evaporation holes, and the orthographic projections of the plurality of second evaporation holes are located in the display area;

[0036] A third mask is set on the side of the light-emitting material layer away from the driving backplane, and a second common film layer is produced through the third mask, the third mask has a third evaporation hole, the orthographic projection of the third evaporation hole covers the display area, and the edge of the orthographic projection of the third evaporation hole is located in the non-display area, and the orthographic projection of the switching electrode is located outside the orthographic projection of the third evaporation hole.

[0037] According to a third aspect of the present disclosure, a display device is provided, comprising the display panel described in the first aspect.

[0038] The embodiments of the present disclosure include at least the following technical effects:

[0039] In the embodiment of the present disclosure, when producing the light-emitting functional layer, the distance between the first mask and the substrate is shortened to ensure the accuracy of the evaporation position. At the same time, since the orthographic projection of the transfer electrode is located outside the orthographic projection of the light-emitting functional layer, the overlapping area between the portion of the first mask close to the edge of the hole and the transfer electrode in the thickness direction of the driving backplane can be effectively reduced. This can weaken the formation of the equivalent capacitance, so as to weaken the phenomenon of releasing static charge at the edge of the hole when the first mask is removed, thereby reducing the situation of static charge damaging the related film layer and improving the yield of the display panel.

[0040] It is to be understood that the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the disclosure. BRIEF DESCRIPTION OF THE DRAWINGS

[0041] The accompanying drawings are incorporated into and constitute a part of the specification, illustrate embodiments consistent with the present disclosure, and together with the specification, are used to explain the principles of the present disclosure. Obviously, the drawings described below are only some embodiments of the present disclosure, and those skilled in the art can derive other drawings based on these drawings without inventive effort.

[0042] Figure 1 A schematic cross-sectional structure diagram of a display panel provided in an embodiment of the present disclosure.

[0043] Figure 2 This is a schematic diagram of the cross-sectional structure of a display panel when manufacturing a light-emitting functional layer according to an embodiment of the present disclosure.

[0044] Figure 3 A schematic diagram of a cross-sectional structure of a display panel provided in the related art.

[0045] Figure 4 A schematic diagram of a top view structure of a display panel provided in the related art.

[0046] Figure 5 A schematic top view of a display panel provided in an embodiment of the present disclosure.

[0047] Figure 6 A schematic flow chart of a method for manufacturing a display panel provided in an embodiment of the present disclosure. DETAILED DESCRIPTION

[0048] Example embodiments will now be described more fully with reference to the accompanying drawings. However, the example embodiments can be implemented in many forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete and will fully convey the concepts of the example embodiments to those skilled in the art. Like reference numerals in the figures represent identical or similar structures, and thus their detailed descriptions will be omitted. Furthermore, the figures are merely schematic illustrations of the present disclosure and are not necessarily drawn to scale.

[0049] Although relative terms such as "upper" and "lower" are used in this specification to describe the relationship of one illustrated component to another, these terms are used herein for convenience only, such as in accordance with the orientation of the illustrations in the accompanying drawings. It will be understood that if the illustrated device were flipped upside down, the component described as "upper" would become the component "lower." When a structure is referred to as "on" another structure, this may mean that the structure is integrally formed with the other structure, that the structure is "directly" disposed on the other structure, or that the structure is "indirectly" disposed on the other structure via the other structure.

[0050] The terms "a", "an", "the", "said" and "at least one" are used to indicate the presence of one or more elements / components / etc.; the terms "including" and "having" are used to express open-ended inclusion and mean that additional elements / components / etc. may be present in addition to the listed elements / components / etc.; the terms "first", "second" and "third" etc. are used only as labels and are not intended to limit the quantity of their objects.

[0051] The present disclosure provides a display panel, such as Figure 1As shown, the display panel includes a driving backplane BM and a light-emitting layer EE. The driving backplane BM has a display area AA and a peripheral area WA located outside the display area AA. The driving backplane BM includes a plurality of pixel circuits located in the display area AA; the light-emitting layer EE is located on one side of the driving backplane BM, and includes a plurality of light-emitting devices whose orthographic projections are located in the display area AA. The plurality of pixel circuits correspond one-to-one to the plurality of light-emitting devices, and a light-emitting device is connected to a corresponding pixel circuit. In this way, the corresponding light-emitting device can be controlled to emit light under the drive of the pixel circuit to realize the display of the picture on the display panel.

[0052] Among them, the orthographic projections involved in the present disclosure all refer to orthographic projections on the driving backplane BM. The driving backplane BM includes a substrate BP and a driving layer DR, and the driving layer DR is located between the substrate BP and the light-emitting layer EE. The driving layer DR can be formed in the substrate BP, that is, the driving backplane BM can be a silicon substrate BP; or the driving layer DR is set independently of the substrate BP. In this case, in some embodiments, the material of the substrate BP can be a glass material such as soda-lime glass, quartz glass, sapphire glass, or can be a metal material such as stainless steel, aluminum, nickel, etc. In other embodiments, the material of the substrate BP may be polymethyl methacrylate (PMMA), polyvinyl alcohol (PVA), polyvinyl phenol (PVP), polyether sulfone (PES), polyimide, polyamide, polyacetal, polycarbonate (PC), polyethylene terephthalate (PET), polyethylene naphthalate (PEN), or a combination thereof.

[0053] Alternatively, the substrate BP may be a single layer material or a composite of multiple layers. For example, in some embodiments, the substrate BP includes a base film layer, a pressure-sensitive adhesive layer, a first polyimide layer, and a second polyimide layer stacked in sequence.

[0054] In the embodiment of the present disclosure, a pixel circuit may include multiple transistors and storage capacitors.

[0055] The transistor may be a thin film transistor, which may be selected from a top-gate thin film transistor, a bottom-gate thin film transistor, or a dual-gate thin film transistor; the storage capacitor may be a bipolar plate capacitor or a triple-plate capacitor; the active layer of the thin film transistor may be made of amorphous silicon semiconductor material, low-temperature polysilicon semiconductor material, metal oxide semiconductor material, organic semiconductor material, or other types of semiconductor materials; and the thin film transistor may be an N-type thin film transistor or a P-type thin film transistor.

[0056] It is understood that among the multiple transistors included in a pixel circuit, the types of any two transistors may be the same or different. For example, in some embodiments, some transistors in a pixel circuit may be N-type transistors and some transistors may be P-type transistors. For example, in other embodiments, the material of the active layer of some transistors in a pixel circuit may be a low-temperature polysilicon semiconductor material, and the material of the active layer of some transistors may be a metal oxide semiconductor material.

[0057] In the embodiment of the present disclosure, Figure 1 or Figure 2 As shown, the driving layer DR includes an insulating buffer layer BUF, a transistor layer, an interlayer dielectric layer ILD, a source / drain metal layer SD, and a planar layer PLN, which are sequentially distributed in a direction away from the substrate BP.

[0058] The interlayer dielectric layer ILD and the planarization layer PLN can both be made of organic insulating materials to ensure a flat surface. The interlayer dielectric layer ILD is provided with first vias, allowing the transistor layer to connect to the source or drain of the source / drain metal layer SD through the first vias. The planarization layer PLN is provided with multiple second vias, with the multiple pixel circuits, the multiple second vias, and the multiple light-emitting devices corresponding one to one. Each light-emitting device is connected to the corresponding pixel circuit through the corresponding second via.

[0059] The insulating buffer layer BUF may be made of an inorganic insulating material such as silicon oxide or silicon nitride. The insulating buffer layer BUF may be a single inorganic material layer or a plurality of stacked inorganic material layers.

[0060] In some embodiments, the source / drain metal layer SD can be used to form source / drain metal layer SD traces such as power lines, data lines, and connection lines, and can also be used to form the other electrode plate for a storage capacitor. The source / drain metal layer SD can be a single source / drain metal layer, or can be two or three source / drain metal layers. Exemplarily, the source / drain metal layer SD included in the drive layer DR includes a single source / drain metal layer.

[0061] In the embodiment of the present disclosure, the transistor layer includes a semiconductor layer ACT, a gate insulating layer GI, and a gate metal layer Ga stacked between the substrate BP and the interlayer dielectric layer ILD. The positional relationship of the various film layers included in the transistor layer can be determined according to the film layer structure of the thin film transistor.

[0062] In some embodiments, as Figure 1 or Figure 2 As shown, the transistor layer includes a semiconductor layer ACT, a gate insulating layer GI, and a gate metal layer Ga stacked in sequence in a direction away from the substrate BP. The thin film transistor thus formed is a top-gate thin film transistor. In other embodiments, the transistor layer includes a gate metal layer Ga, a gate insulating layer GI, and a semiconductor layer ACT stacked in sequence in a direction away from the substrate BP. The thin film transistor thus formed is a bottom-gate thin film transistor.

[0063] In some embodiments, the semiconductor layer ACT can be used to form the active portion of each transistor included in the pixel circuit. Each active portion includes a channel region and two connecting portions (i.e., a source and a drain) located on both sides of the channel region. The channel region can maintain semiconductor properties, and the semiconductor material corresponding to the two connecting portions is partially or completely conductive. The semiconductor layer ACT can be a single semiconductor layer or two semiconductor layers. Exemplarily, the semiconductor layer ACT includes a low-temperature polycrystalline silicon semiconductor layer.

[0064] In some embodiments, the gate metal layer Ga can be used to form metal traces such as scan lines, and can also be used to form a plate of a storage capacitor. The gate metal layer Ga can be a single gate metal layer, or can be two or three gate metal layers. Exemplarily, the gate metal layer Ga includes a single gate metal layer.

[0065] It is understood that when the gate metal layer Ga or the semiconductor layer ACT has a multi-layer structure, the gate insulating layer GI in the transistor layer can be adaptively increased or decreased. For example, in some embodiments, the transistor layer included in the driving layer DR includes a low-temperature polycrystalline silicon semiconductor layer ACT, a gate insulating layer GI, and a gate metal layer Ga, which are sequentially stacked on the substrate BP.

[0066] Optionally, the driving layer DR further includes a passivation layer disposed between the source / drain metal layer SD and the planar layer PLN, so as to protect the source / drain metal layer SD through the provision of the passivation layer.

[0067] Optionally, the driving layer DR further includes a shielding layer disposed between the insulating buffer layer BUF and the substrate BP. The shielding layer may overlap with at least a portion of the channel region of the transistor to shield light directed toward the transistor, thereby stabilizing the electrical characteristics of the transistor.

[0068] In the embodiments of the present disclosure, the light-emitting device may be an organic light-emitting diode, a micro light-emitting diode, a quantum dot-organic light-emitting diode, a quantum dot light-emitting diode, or other types of light-emitting devices.

[0069] For example, in some embodiments, the light emitting device is an organic light emitting diode, and the display panel is an OLED display panel. Below, taking the light emitting device as an organic light emitting diode as an example, a feasible structure of the light emitting device is exemplarily introduced.

[0070] like Figure 1 As shown, the light-emitting layer EE includes a first electrode layer An, a pixel definition layer PDL, a light-emitting function layer EL and a second electrode layer COM stacked in sequence along a direction away from the driving backplane BM. The first electrode layer An includes a plurality of first electrodes that are spaced apart and whose orthographic projections are located in the display area AA. The light-emitting function layer EL includes light-emitting units corresponding one-to-one to the plurality of first electrodes. The second electrode layer COM includes second electrodes corresponding one-to-one to the plurality of first electrodes. The first electrode, the light-emitting unit and the second electrode constitute a light-emitting device.

[0071] The pixel definition layer PDL has a plurality of pixel openings corresponding to the plurality of first electrodes one by one, and the first electrodes include exposed areas exposed at the corresponding pixel openings, and the exposed areas form light-emitting areas of the corresponding light-emitting devices.

[0072] The light-emitting functional layer EL may include a light-emitting material layer ELa, and one or more of a hole injection layer, a hole transport layer, an electron blocking layer, a hole blocking layer, an electron transport layer and an electron injection layer.

[0073] For any of the film layers among the hole injection layer, the hole transport layer, the electron blocking layer, the hole blocking layer, the electron transport layer and the electron injection layer, since any of the film layers can be used as a common film layer for multiple light-emitting devices, a mask having an evaporation hole that can completely cover the display area can be used for its production. Specifically, the first mask OM has a first evaporation hole corresponding to the entire display area AA, and the first evaporation hole on the first mask OM can be used to produce any of the film layers in the entire display area AA. In this way, the orthographic projection of the common film layer included in the light-emitting functional layer EL covers the display area AA, and the edge of the orthographic projection is located in the non-display area AA, that is, the orthographic projection of the light-emitting functional layer EL covers the display area AA, and the edge of the orthographic projection of the light-emitting functional layer EL is located in the non-display area AA. Of course, when the light-emitting functional layer EL includes multiple common film layers, for some of the common film layers, in addition to using the first mask OM for evaporation, the second mask can also be used to directly evaporate in the pixel opening, and the embodiments of the present disclosure are not limited to this.

[0074] The luminescent material layer ELa can be produced using a second reticle. Specifically, the second reticle has a plurality of second evaporation holes corresponding one-to-one with the plurality of pixel openings. Through these holes, luminescent material units can be evaporated within each pixel opening. In this case, the luminescent material units include red, green, and blue units. Of course, the luminescent material layer ELa can also be produced using the first reticle described above, in which case the luminescent material layer is a white material layer.

[0075] In some embodiments, as Figure 1 As shown, the display panel may further include a thin-film encapsulation layer TEF. The thin-film encapsulation layer TEF is disposed on the side of the light-emitting layer EE facing away from the substrate BP, and may include inorganic encapsulation layers and organic encapsulation layers alternately stacked. Exemplarily, the thin-film encapsulation layer TEF includes a first inorganic encapsulation layer, an organic encapsulation layer, and a second inorganic encapsulation layer sequentially stacked on the side of the light-emitting layer EE facing away from the substrate BP.

[0076] The inorganic encapsulation layer can effectively block external moisture and oxygen, preventing water and oxygen from invading the organic light-emitting functional layer EL and causing material degradation; the organic encapsulation layer is located between two adjacent inorganic encapsulation layers to achieve flatness and reduce stress between the inorganic encapsulation layers.

[0077] The orthographic projection of the edge of the inorganic encapsulation layer may extend from the display area AA to the peripheral area WA, and the orthographic projection of the edge of the organic encapsulation layer may be located between the edge of the display area AA and the edge of the inorganic encapsulation layer.

[0078] In the embodiment of the present disclosure, Figure 1 or Figure 2 As shown, the light emitting layer EE further includes a switching electrode PA whose orthographic projection is located in the peripheral area WA, and the second electrode layer COM is electrically connected to the switching electrode PA, thereby facilitating conduction between the second electrode layer and the external circuit.

[0079] The transfer electrodes PA can be fabricated in the same layer as the first electrodes, that is, the first electrode layer An includes not only the first electrodes but also the transfer electrodes PA. Of course, the transfer electrodes PA can also be located in different film layers from the first electrodes.

[0080] Among them, taking the example of the transfer electrode PA and the first electrode being produced in the same layer, the first electrode and the transfer electrode PA can be formed by whole-layer evaporation and then etching, or by patterned evaporation. Of course, they can also be formed by other methods, as long as the orthographic projection of the first electrode is located in the display area AA and the orthographic projection of the transfer electrode PA is located in the peripheral area WA.

[0081] In combination with the film structure of the light-emitting functional layer EL described above, in the related art, the inventors have found after careful study that: when making part of the common film layer of the light-emitting functional layer EL, such as Figure 3 and Figure 4 As shown, a first mask OM with a first evaporation hole is usually used. Since the first mask OM is close to the substrate BP, and the portion of the first mask OM close to the hole edge overlaps with the transfer electrode PA in the thickness direction of the substrate BP, an equivalent capacitor is formed to achieve charge accumulation. When the first mask OM is removed, as the distance between the first mask OM and the transfer electrode PA increases, the ability of the equivalent capacitor to store net charge gradually weakens. When the distance between the first mask OM and the transfer electrode PA increases to a certain value, the hole edge of the first mask OM releases static charge, thereby damaging related film layers (such as the insulating buffer layer BUF, the gate insulating layer GI, the interlayer dielectric layer ILD, the passivation layer PVX, etc.) and forming cracks in the related film layers. This can easily cause water vapor to penetrate along the cracks, leading to failure of the light-emitting functional layer EL, etc., reducing the yield of the display panel.

[0082] In the present disclosure, when the common film layer of the light-emitting functional layer EL is evaporated using the first mask OM, in order to avoid the formation of an equivalent capacitance between the portion of the first mask OM close to the edge of the hole and the transfer electrode PA, as shown in FIG. Figure 5 As shown, the orthographic projection of the switching electrode PA is located outside the orthographic projection of the light-emitting functional layer EL, that is, the edge of the orthographic projection of the switching electrode PA is located within the orthographic projection of the first mask OM.

[0083] In this way, when making the light-emitting functional layer EL, the distance between the first mask OM and the substrate BP is shortened to ensure the accuracy of the evaporation position. At the same time, since the orthographic projection of the transfer electrode PA is located outside the orthographic projection of the light-emitting functional layer EL, the overlapping area between the part close to the edge of the hole on the first mask OM and the transfer electrode PA in the thickness direction of the driving backplane BM can be effectively reduced. In this way, the formation of the equivalent capacitance can be weakened, so as to weaken the phenomenon of releasing static charge at the edge of the hole when the first mask OM is removed, thereby reducing the situation of static charge damaging the related film layer and improving the yield of the display panel.

[0084] In combination with the above-mentioned case where the light-emitting functional layer EL includes a common film layer, in some embodiments, as Figure 1 or Figure 2As shown, the light-emitting functional layer EL includes: a first common film layer ELb, a light-emitting material layer ELa and a second common film layer ELc. The first common film layer ELb is located on the side of the pixel definition layer away from the driving backplane BM; the light-emitting material layer ELa is located on the side of the first common film layer ELb away from the driving backplane BM, and includes a plurality of light-emitting material units whose orthographic projections are located in the display area AA; the second common film layer ELc is located on the side of the light-emitting layer EE material layer away from the driving backplane BM.

[0085] The first common film layer ELb may be one or more of a hole injection layer, a hole transport layer, and an electron blocking layer, and the second common film layer ELc may be one or more of a hole blocking layer, an electron transport layer, and an electron injection layer.

[0086] In combination with the above, the first common film layer ELb may be evaporated using the first mask OM, and the second common film layer ELc may be evaporated using the second mask; the first common film layer ELb may be evaporated using the second mask, and the second common film layer ELc may be evaporated using the first mask OM; or both the first common film layer ELb and the second common film layer ELc may be evaporated using the first mask OM. In the case where the first common film layer ELb and the second common film layer ELc include multiple film layers, some of the multiple film layers may be evaporated using the first mask OM, and the remaining film layers may be evaporated using the second mask.

[0087] For example, the first common film layer ELb and the second common film layer ELc are both evaporated using the first mask OM. At this time, the orthographic projection of the first common film layer ELb covers the display area AA, and the edge of the orthographic projection of the first common film layer ELb is located in the non-display area AA, and the orthographic projection of the transfer electrode PA is located outside the orthographic projection of the first common film layer ELb; the orthographic projection of the second common film layer ELc covers the display area AA, and the edge of the orthographic projection of the second common film layer ELc is located in the non-display area AA, and the orthographic projection of the transfer electrode PA is located outside the orthographic projection of the second common film layer ELc.

[0088] In this way, when producing the first common film layer ELb and the second common film layer ELc, the overlapping area between the portion close to the edge of the hole on the first mask plate OM and the transfer electrode PA in the thickness direction of the driving backplane BM can be effectively reduced, thereby weakening the formation of the equivalent capacitance, thereby weakening the phenomenon of releasing static charge at the edge of the hole when removing the first mask plate OM, and improving the yield of the display panel.

[0089] In some embodiments, as Figure 1 、 Figure 2 or Figure 5As shown, the switching electrode PA has a first edge PA1 close to the display area AA and a second edge PA2 away from the display area AA, and the distance between the edge of the orthographic projection of the light-emitting functional layer EL and the orthographic projection of the first edge PA1 (the difference between L2 and L1) is greater than or equal to 20 microns.

[0090] In this way, when manufacturing the light-emitting functional layer EL, the length of the hole edge of the first mask OM extending from the first edge PA1 is greater than or equal to 20 microns, thereby further reducing the overlapping area between the portion of the first mask OM near the hole edge and the transfer electrode PA in the thickness direction of the driving backplane BM, thereby weakening or even avoiding the formation of equivalent capacitance near the hole edge of the first mask OM, thereby further improving the yield of the display panel. For example, the distance between the edge of the orthographic projection of the light-emitting functional layer EL and the orthographic projection of the first edge PA1 (the difference between L2 and L1) is 20 microns, 30 microns, 40 microns, 50 microns, etc., that is, when manufacturing the light-emitting functional layer EL, the length of the hole edge of the first mask OM extending from the first edge PA1 is 20 microns, 30 microns, 40 microns, 50 microns, etc.

[0091] Continuing with the above example, the first common film layer ELb and the second common film layer ELc are both evaporated using the first mask OM. In this case, the distance between the edge of the orthographic projection of the first common film layer ELb, the edge of the orthographic projection of the second common film layer ELc, and the orthographic projection of the first edge PA1 (the difference between L2 and L1) is greater than or equal to 20 microns. In other words, when forming the first common film layer ELb and depositing the common film layer, the length of the edge of the hole in the first mask OM extending beyond the first edge PA1 is greater than or equal to 20 microns. For example, when forming the first common film layer ELb and depositing the common film layer, the length of the edge of the hole in the first mask OM extending beyond the first edge PA1 is 20 microns, 30 microns, 40 microns, 50 microns, and so on.

[0092] It should be noted that when adjusting the distance between the edge of the orthographic projection of the light-emitting functional layer EL and the orthographic projection of the first edge PA1, the greater the distance between the edge of the orthographic projection of the light-emitting functional layer EL and the orthographic projection of the first edge PA1, the larger the gap between the transfer electrode PA and the display area AA, thereby increasing the width of the peripheral area WA of the display panel. Thus, to avoid a wide peripheral area WA of the display panel, the distance between the edge of the orthographic projection of the light-emitting functional layer EL and the orthographic projection of the first edge PA1 can be less than a certain distance. For example, the distance between the edge of the orthographic projection of the light-emitting functional layer EL and the orthographic projection of the first edge PA1 is less than 140 microns.

[0093] Optionally, the distance L1 between the edge of the orthographic projection of the light-emitting functional layer EL and the edge of the display area AA is greater than or equal to 60 micrometers and less than or equal to 180 micrometers. For example, the distance L1 between the edge of the orthographic projection of the light-emitting functional layer EL and the edge of the display area AA is 120 micrometers.

[0094] In this way, by limiting the minimum distance between the edge of the orthographic projection of the light-emitting functional layer EL and the edge of the display area AA, it is possible to ensure that the edge of the light-emitting functional layer EL extends beyond the edge of the display area AA, thereby avoiding uneven thickness of the light-emitting functional layer EL at the edge of the display area AA; and by limiting the maximum distance between the edge of the orthographic projection of the light-emitting functional layer EL and the edge of the display area AA, since it is necessary to ensure that the orthographic projection of the transfer electrode PA is located outside the orthographic projection of the light-emitting functional layer EL, the problem of a larger gap between the orthographic projection of the second edge PA2 of the transfer electrode PA and the display area AA, which leads to a wider border of the display panel, is avoided.

[0095] Optionally, a distance L2 between the orthographic projection of the first edge PA1 and the edge of the display area AA is greater than or equal to 160 micrometers and less than or equal to 200 micrometers. For example, the distance L2 between the orthographic projection of the first edge PA1 and the edge of the display area AA is 180 micrometers.

[0096] In this way, by limiting the minimum distance between the orthographic projection of the first edge PA1 and the edge of the display area AA, a large gap between the orthographic projection of the first edge PA1 of the switching electrode PA and the display area AA can be avoided, thereby achieving a narrow frame of the display panel; and by limiting the maximum distance between the orthographic projection of the first edge PA1 and the edge of the display area AA, it can be ensured that the light-emitting functional layer EL has sufficient setting space, thereby ensuring that the thickness of the light-emitting functional layer EL at the edge of the display area AA is uniform, and at the same time achieving that the orthographic projection of the light-emitting functional layer EL is located outside the orthographic projection of the switching electrode PA.

[0097] Furthermore, in the embodiment of the present disclosure, the pixel definition layer may not cover the transfer electrode PA, or may only cover a portion of the transfer electrode PA, or of course may completely cover the transfer electrode PA.

[0098] When the pixel definition layer does not cover the transfer electrode PA, or only covers a part of the transfer electrode PA, the second electrode layer COM can directly cover the transfer electrode PA to achieve the connection between the second electrode layer COM and the transfer electrode PA; when the pixel definition layer completely covers the transfer electrode PA, or only covers a part of the transfer electrode PA, the second electrode layer COM can be connected to the transfer electrode PA through a via hole passing through the pixel definition layer.

[0099] Among them, Figure 1 or Figure 2As shown, the pixel definition layer covers a portion of the transfer electrode PA, that is, Figure 5 As shown, the edge of the orthographic projection of the pixel definition layer is located between the orthographic projections of the first edge PA1 and the second edge PA2.

[0100] Optionally, a distance between an edge of the orthographic projection of the pixel definition layer and an orthographic projection of the first edge PA1 (a difference between L3 and L2 ) is greater than or equal to 20 micrometers.

[0101] In other embodiments, the transfer electrode PA has a first edge PA1 close to the display area AA, the distance between the edge of the orthographic projection of the light-emitting functional layer EL and the edge of the display area AA is a first distance L1, and the distance between the orthographic projection of the first edge PA1 and the edge of the display area AA is a second distance L2; the second distance L2 is greater than the first distance L1, and the ratio of the second distance L2 to the first distance L1 is greater than or equal to 1.1 and less than or equal to 1.5.

[0102] Combined with the fabrication of the light-emitting functional layer EL, it is known that the distance between the orthographic projection of the aperture edge of the first mask OM and the edge of the display area AA is the first distance L1. This ensures that the length of the aperture edge of the first mask OM extending beyond the transfer electrode PA is at least 0.1 times the first distance L1. This reduces the overlap between the portion of the first mask OM near the aperture edge and the transfer electrode PA in the thickness direction of the driver backplane BM, thereby weakening or even preventing the formation of equivalent capacitance near the aperture edge of the first mask OM, further improving the yield of the display panel. Furthermore, because the ratio of the second distance L2 to the first distance L1 is less than or equal to 1.5, the first distance L1 is fixed, thus preventing the second distance L2 from being too large, thereby preventing the display panel's peripheral area WA from being too wide, and ensuring a narrow bezel.

[0103] Further, in combination with the coverage of the pixel definition layer on the transfer electrode PA described in the above embodiment, optionally, the distance between the edge of the positive projection of the pixel definition layer and the edge of the display area AA is a third distance L3, the third distance L3 is greater than the second distance L2, and the ratio between the third distance L3 and the second distance L2 is greater than or equal to 1.1 and less than or equal to 1.5.

[0104] The present disclosure also provides a method for manufacturing a display panel, which can be used to manufacture the display panel described in the above embodiment. Figure 6 As shown, the method includes the following steps S610 to S650.

[0105] Step S610: manufacturing a driving backplane, wherein the driving backplane has a display area and a peripheral area located outside the display area.

[0106] Step S620 : manufacturing a first electrode layer on one side of the driving backplane, wherein the first electrode layer includes a switching electrode whose orthographic projection is located in the peripheral area.

[0107] Step S630 : forming a pixel definition layer on a side of the first electrode layer facing away from the driving backplane.

[0108] Step S640: A light-emitting functional layer is made on the side of the pixel definition layer facing away from the driving backplane through at least one mask plate, wherein the orthographic projection of the light-emitting functional layer covers the display area, and the edge of the orthographic projection of the light-emitting functional layer is located in the non-display area, and the orthographic projection of the switching electrode is located outside the orthographic projection of the light-emitting functional layer.

[0109] Step S650: forming a second electrode layer on a side of the light-emitting functional layer away from the driving backplane, wherein the second electrode layer at least covers the light-emitting functional layer and is connected to the transfer electrode.

[0110] In the embodiment of the present disclosure, when producing the light-emitting functional layer, the distance between the first mask and the substrate is shortened to ensure the accuracy of the evaporation position. At the same time, since the orthographic projection of the transfer electrode is located outside the orthographic projection of the light-emitting functional layer, the overlapping area between the portion of the first mask close to the edge of the hole and the transfer electrode in the thickness direction of the driving backplane can be effectively reduced. This can weaken the formation of the equivalent capacitance, so as to weaken the phenomenon of releasing static charge at the edge of the hole when the first mask is removed, thereby reducing the situation of static charge damaging the related film layer and improving the yield of the display panel.

[0111] In step S610, the specific structure of the driver backplane described in the above embodiment and the manufacturing process of each film layer of the driver backplane in the related art can be combined to manufacture the device, and the present embodiment does not limit this. In step S620, the positional relationship between the transfer electrode and the first electrode, that is, the manufacturing method, described in the above embodiment can be combined to manufacture the device, and the present embodiment does not limit this.

[0112] In step S640, the film structure of the light-emitting functional layer described in the above embodiment can be combined to form the film structure of the light-emitting functional layer. When forming the light-emitting functional layer, a common mask can be used to form each film layer of the light-emitting functional layer, or multiple masks can be used to form each film layer of the light-emitting functional layer.

[0113] Taking the light-emitting functional layer including a first common film layer, a light-emitting material layer and a second common film layer arranged in a stacked manner as an example, a first mask is set on the side of the pixel definition layer away from the driving backplane, and the first common film layer is manufactured through the first mask, the first mask has a first evaporation hole, the orthographic projection of the first evaporation hole covers the display area, and the edge of the orthographic projection of the first evaporation hole is located in the non-display area, and the orthographic projection of the switching electrode is located outside the orthographic projection of the first evaporation hole; a second mask is set on the side of the first common film layer away from the driving backplane, and the light-emitting material layer is manufactured through the second mask, the second mask has multiple second evaporation holes, and the orthographic projections of the multiple second evaporation holes are located in the display area; a third mask is set on the side of the light-emitting material layer away from the driving backplane, and the second common film layer is manufactured through the third mask, the third mask has a third evaporation hole, the orthographic projection of the third evaporation hole covers the display area, and the edge of the orthographic projection of the third evaporation hole is located in the non-display area, and the orthographic projection of the switching electrode is located outside the orthographic projection of the third evaporation hole.

[0114] The first and third masks can be the same mask, but are referred to differently when used to make the first and second common film layers. Of course, the first and third masks can also be different masks, which is not limited in the present disclosure.

[0115] It should be noted that although the steps of the method for manufacturing a display panel in the present disclosure are described in a specific order in the accompanying drawings, this does not require or imply that the steps must be performed in this specific order, or that all steps must be performed to achieve the desired results. Additionally or alternatively, certain steps may be omitted, multiple steps may be combined into one step, and / or one step may be broken down into multiple steps.

[0116] An embodiment of the present disclosure further provides a display device, comprising the display panel described in the above embodiment.

[0117] In combination with the display panel described in the above embodiment, a display device using the display panel can improve the display effect while increasing the yield, thereby avoiding the risk of market withdrawal.

[0118] Those skilled in the art will readily appreciate other embodiments of the present disclosure after considering the specification and practicing the invention disclosed herein. This application is intended to cover any variations, uses, or adaptations of the present disclosure that follow the general principles of the present disclosure and include common knowledge or customary techniques in the art not disclosed herein. The description and examples are to be considered as exemplary only, with the true scope and spirit of the present disclosure being indicated by the appended claims.

Claims

1. A display panel, characterized in that: include: A driving backplane having a display area and a peripheral area located outside the display area; A first electrode layer is located on one side of the driving backplane and includes a switching electrode whose orthographic projection is located in the peripheral area; a pixel definition layer, located on a side of the first electrode layer facing away from the driving backplane; a light-emitting functional layer, located on a side of the pixel definition layer facing away from the driving backplane, wherein the orthographic projection of the light-emitting functional layer covers the display area, and the edge of the orthographic projection of the light-emitting functional layer is located in the non-display area, and the orthographic projection of the switching electrode is located outside the orthographic projection of the light-emitting functional layer; a second electrode layer, located on a side of the light-emitting functional layer away from the driving backplane, and connected to the transfer electrode; The switching electrode has a first edge close to the display area and a second edge away from the display area, and the distance between the edge of the orthographic projection of the light-emitting functional layer and the orthographic projection of the first edge is greater than or equal to 20 microns; the distance between the orthographic projection of the first edge and the edge of the display area is greater than or equal to 160 microns and less than or equal to 200 microns.

2. The display panel according to claim 1, wherein The light-emitting functional layer includes: a first common film layer, located on a side of the pixel definition layer facing away from the driving backplane, wherein an orthographic projection of the first common film layer covers the display area, an edge of the orthographic projection of the first common film layer is located in the non-display area, and the orthographic projection of the switching electrode is located outside the orthographic projection of the first common film layer; a luminescent material layer, located on a side of the first common film layer facing away from the driving backplane, and comprising a plurality of luminescent material units whose orthographic projections are located in the display area; The second common film layer is located on the side of the light-emitting material layer away from the driving backplane, the orthographic projection of the second common film layer covers the display area, and the edge of the orthographic projection of the second common film layer is located in the non-display area, and the orthographic projection of the switching electrode is located outside the orthographic projection of the second common film layer.

3. The display panel according to claim 1, wherein A distance between an edge of an orthographic projection of the light-emitting functional layer and an edge of the display area is greater than or equal to 60 micrometers and less than or equal to 180 micrometers.

4. The display panel according to claim 1, wherein: The edge of the orthographic projection of the pixel definition layer is located between the orthographic projections of the first edge and the second edge.

5. The display panel according to claim 4, wherein: A distance between an edge of an orthographic projection of the pixel definition layer and an orthographic projection of the first edge is greater than or equal to 20 micrometers.

6. The display panel according to claim 1 or 2, wherein: The switching electrode has a first edge close to the display area; The distance between the edge of the orthographic projection of the light-emitting functional layer and the edge of the display area is a first distance, and the distance between the orthographic projection of the first edge and the edge of the display area is a second distance; The second distance is greater than the first distance, and a ratio of the second distance to the first distance is greater than or equal to 1.1 and less than or equal to 1.

5.

7. The display panel according to claim 6, wherein: The distance between the edge of the orthographic projection of the pixel definition layer and the edge of the display area is a third distance; The third distance is greater than the second distance, and a ratio of the third distance to the second distance is greater than or equal to 1.1 and less than or equal to 1.

5.

8. A method for manufacturing a display panel, characterized in that: The method comprises: Manufacturing a driving backplane, wherein the driving backplane has a display area and a peripheral area located outside the display area; A first electrode layer is formed on one side of the driving backplane, wherein the first electrode layer includes a switching electrode whose orthographic projection is located in the peripheral area; forming a pixel definition layer on a side of the first electrode layer facing away from the driving backplane; A light-emitting functional layer is formed on a side of the pixel definition layer facing away from the driving backplane using at least one mask, wherein the orthographic projection of the light-emitting functional layer covers the display area, the edge of the orthographic projection of the light-emitting functional layer is located in the non-display area, and the orthographic projection of the switching electrode is located outside the orthographic projection of the light-emitting functional layer; A second electrode layer is formed on a side of the light-emitting functional layer away from the driving backplane, wherein the second electrode layer at least covers the light-emitting functional layer and is connected to the transfer electrode; In which, the switching electrode has a first edge close to the display area and a second edge away from the display area, the distance between the edge of the orthographic projection of the light-emitting functional layer and the orthographic projection of the first edge is greater than or equal to 20 microns; the distance between the orthographic projection of the first edge and the edge of the display area is greater than or equal to 160 microns and less than or equal to 200 microns.

9. The method according to claim 8, wherein The method of forming a light-emitting functional layer on a side of the pixel definition layer away from the driving backplane by using a mask plate includes: A first mask is provided on a side of the pixel definition layer facing away from the driving backplane, and a first common film layer is formed using the first mask, wherein the first mask has a first evaporation hole, an orthographic projection of the first evaporation hole covers the display area, an edge of the orthographic projection of the first evaporation hole is located in the non-display area, and an orthographic projection of the transfer electrode is located outside the orthographic projection of the first evaporation hole; A second mask is provided on a side of the first common film layer facing away from the driving backplane, and a light-emitting material layer is formed through the second mask, wherein the second mask has a plurality of second evaporation holes, and the orthographic projections of the plurality of second evaporation holes are located in the display area; A third mask is set on the side of the light-emitting material layer away from the driving backplane, and a second common film layer is produced through the third mask, the third mask has a third evaporation hole, the orthographic projection of the third evaporation hole covers the display area, and the edge of the orthographic projection of the third evaporation hole is located in the non-display area, and the orthographic projection of the switching electrode is located outside the orthographic projection of the third evaporation hole.

10. A display device, characterized in that: The display panel comprises any one of claims 1 to 7.

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