Side injection design for improving radical concentration

Abstract

In one example, a chamber inlet assembly includes a chamber inlet, an outer coupling for a delivery line, and an inner coupling for a processing region of a processing chamber. The inner and outer couplings are on an inner end and an outer end, respectively, of the chamber inlet, with a cross-sectional area of the inner coupling being greater than a cross-sectional area of the outer coupling. The chamber inlet assembly also includes a longitudinal profile that includes the inner and outer ends and a first side and a second side on opposite sides of the chamber inlet, with a shape of the longitudinal profile including at least one of a triangle, a modified triangle, a trapezoid, a modified trapezoid, a rectangle, a modified rectangle, a diamond, and a modified diamond. The chamber inlet assembly also includes a box that includes the chamber inlet and is configured to be disposed into a sidewall of the processing chamber.

Description

[0001] This application is a divisional application of the invention patent application filed on January 16, 2019, with application number 201980009302.6 and entitled "Side Injection Design for Improving Free Radical Concentration". Technical Field

[0002] Embodiments of this disclosure generally relate to the fabrication of semiconductor devices. More specifically, the embodiments described herein relate to the fabrication of floating-gate NAND memory devices and other transistor gate structures using improved side-implantation of ions, radicals, and electrons from a remote plasma source. Background Technology

[0003] Flash memory (such as NAND flash memory devices) is a common type of non-volatile memory widely used in high-capacity storage applications. NAND flash memory devices typically have a stacked gate structure, where tunnel oxide (TO), floating gate (FG), inter-polysilicon dielectric (IPD), and control gate (CG) are sequentially stacked on a semiconductor substrate. The floating gate, tunnel oxide, and the lower portion of the substrate generally form the cell (or memory cell) of the NAND flash memory device. Shallow trench isolation (STI) regions are provided in the substrate between each adjacent cell of the tunnel oxide and the floating gate to isolate that cell from its neighboring cells. During writing to the NAND flash memory device, a positive voltage is applied to the control gate, which attracts electrons from the substrate into the floating gate. To erase data from the NAND flash memory device, a positive voltage is applied to the substrate to release electrons from the floating gate and through the tunnel oxide. The electron flow is sensed by sensing circuitry, resulting in a return of "0" or "1" as the current indication. The amount of electrons in the floating gate and the "0" or "1" characteristic form the basis for storing data in NAND flash memory devices.

[0004] Floating gates are typically isolated from the semiconductor substrate by tunnel oxide and from the control gate by an inter-polysilicon dielectric. This prevents electron leakage, for example, between the substrate and the floating gate or between the floating gate and the control gate. To enable continuous physical scaling of NAND flash memory devices, the industry has used nitriding processes to bond nitrogen to the surface of the floating gate to improve the reliability of the tunnel oxide or to suppress dopant diffusion outside the floating gate. However, nitriding processes also undesirably bond nitrogen to shallow trench isolation regions. Nitrogen bonded in shallow trench isolation regions between adjacent floating gate structures creates charge leakage paths, which can negatively impact the final device performance.

[0005] Generally, plasmas generated by the energy excitation of gas molecules, for example, contain charged ions, free radicals, and electrons. Compared to ions or mixtures of free radicals and ions, the free radicals in plasma typically react with the silicon, polycrystalline silicon, or silicon nitride material on the substrate in a more desirable manner. In this respect, eliminating most of the ions in the plasma is beneficial, allowing only the free radicals in the plasma to react with the silicon, polycrystalline silicon, or silicon nitride material on the substrate, thereby achieving higher processing selectivity for the silicon or polycrystalline silicon material on the substrate.

[0006] Many current substrate processing systems include a remote plasma source coupled to a processing chamber via side injection. Ideally, radicals from the remote plasma source travel via side injection into the processing chamber and then flow across and through the surface of the substrate. In many current substrate processing systems, the side injection configuration can lead to significant radical loss, at least in part due to the constrained shape / size of the coupling adapter (between the side injection and the processing chamber). For example, this configuration can result in substantial volume-surface recombination before the radicals reach the processing chamber. Some current substrate processing systems can exacerbate volume-surface recombination by generating back pressure from the RPS to the processing chamber (see U.S. Patent No. 6,450,116 to Nobel et al.).

[0007] Improving the configuration of side-injection and / or adapters by reducing or minimizing volume-surface recombination to provide greater free radical availability on the substrate would be beneficial. Summary of the Invention

[0008] A chamber inlet assembly for a substrate processing system includes: a chamber inlet; an external coupling for a delivery pipeline; an internal coupling for a processing area of ​​the processing chamber, the internal coupling and the external coupling being located at an inner end and an outer end of the chamber inlet, respectively, wherein the cross-sectional area of ​​the internal coupling is larger than the cross-sectional area of ​​the external coupling; a longitudinal profile including an inner end and an outer end, as well as a first side and a second side, the first side and the second side being located on opposite sides of the chamber inlet, wherein the shape of the longitudinal profile includes at least one of the following: a triangle, a modified triangle, a trapezoid, a modified trapezoid, a rectangle, a modified rectangle, a rhombus, and a modified rhombus; and a box including the chamber inlet and configured to be disposed in the sidewall of the processing chamber.

[0009] An inlet member for a delivery line in a substrate processing system includes: a first end for coupling to a mounting sleeve of the delivery line; a second end for coupling to a processing chamber; and an inlet passage extending from the first end to the second end, wherein: the inlet passage includes a cylindrical portion near the first end, the inlet passage includes a tapered portion near the second end, and a first cross-sectional area at the first end is smaller than a second cross-sectional area at the second end.

[0010] The substrate processing system includes: a delivery line coupled between a processing chamber and a remote plasma source; the processing chamber including sidewalls; and a chamber inlet assembly disposed in the sidewalls, the chamber inlet assembly including: a chamber inlet; an external coupling coupled to the delivery line; an internal coupling for a processing area of ​​the processing chamber, the internal coupling and the external coupling being located at an inner end and an outer end of the chamber inlet, respectively, wherein the cross-sectional area of ​​the internal coupling is larger than the cross-sectional area of ​​the external coupling; a longitudinal section including an inner end and an outer end, and a first side and a second side, the first side and the second side being located on opposite sides of the chamber inlet, wherein the shape of the longitudinal section includes at least one of the following: triangle, modified triangle, trapezoid, modified trapezoid, rectangle, modified rectangle, rhombus, and modified rhombus; and a box including the chamber inlet and configured to be disposed in the sidewalls.

[0011] A substrate processing system includes: a processing chamber; and a delivery line coupled between the processing chamber and a remote plasma source; the delivery line includes: a mounting sleeve coupled to the remote plasma source; and an inlet member including: a first end coupled to the mounting sleeve; a second end coupled to the processing chamber; and an inlet channel extending from the first end to the second end, wherein: the inlet channel includes a cylindrical portion near the first end, the inlet channel includes a tapered portion near the second end, and a first cross-sectional area at the first end is smaller than a second cross-sectional area at the second end. Attached Figure Description

[0012] The features of this disclosure have been briefly summarized above and are discussed in more detail below, which can be understood by referring to the embodiments of this disclosure illustrated in the accompanying drawings. However, it should be noted that the accompanying drawings illustrate only exemplary embodiments and should not be considered as limiting its scope; other equivalent embodiments are permissible with respect to this disclosure.

[0013] Figure 1 A substrate processing system according to an embodiment disclosed herein is illustrated.

[0014] Figure 2 Draw Figure 1A schematic cross-sectional view of the delivery pipeline of the substrate processing system.

[0015] Figure 3 yes Figure 1 A schematic top view of the substrate processing system.

[0016] Figure 4 This is a schematic top view of the alternative substrate processing system.

[0017] Figure 5 This is a schematic top view of another alternative substrate processing system.

[0018] Figure 6 This is a schematic top view of another alternative substrate processing system.

[0019] Figure 7 This is a schematic top view of another alternative substrate processing system.

[0020] Figure 8 yes Figures 4 to 7 The results of the modeling experiments of the substrate processing system are plotted as curves, showing the surface reaction measured by the concentration of O free radicals at various points on the substrate surface.

[0021] Figure 9 yes Figures 4 to 7 The graph shows the area-weighted average of the O radical concentration in the simulation experiment results of the substrate processing system.

[0022] Figure 10 The diagram illustrates representative results from the oxide growth rate experiment.

[0023] For ease of understanding, the same figures are used to represent the same elements in the figures where possible. It is contemplated that elements and features in one embodiment may be advantageously used in other embodiments without further description. Detailed Implementation

[0024] This patent application describes an apparatus and method for incorporating plasma radicals into a material on a substrate or semiconductor substrate using a precursor activator, such as a remote plasma source (“RPS”). Generally, plasma is a gaseous material composed of ions, radicals, electrons, and neutral molecules. Plasma radicals typically react with silicon or polycrystalline silicon material on a substrate in a more desirable manner compared to ions or mixtures of radicals and ions. In this respect, the apparatus and method described herein eliminates most of the ions in the plasma, resulting in a reaction primarily of plasma radicals with the silicon or polycrystalline silicon material on the substrate, thereby improving the process selectivity of the silicon or polycrystalline silicon material on the substrate.

[0025] The apparatus and methods described herein can be used to fabricate semiconductor devices and structures suitable for narrow-pitch applications. Narrow-pitch applications, as used herein, include half-pitches of 32 nm or smaller (e.g., device nodes of 32 nm or smaller). As used herein, the term "pitch" refers to a measured distance between parallel or adjacent structures of a semiconductor device. This pitch can be measured from one side to the other on the same side of adjacent or substantially parallel structures. The semiconductor device and structure can also be used in applications with larger pitches. The semiconductor device can be, for example, NAND or NOR flash memory, or other suitable devices.

[0026] Plasma typically contains charged gaseous matter (e.g., ions-cations or anions) and uncharged gaseous matter (e.g., free radicals, excited neutral matter, and unexcited neutral matter). In many embodiments, charged gaseous matter can be reduced or removed from the plasma material before the substrate is processed to the stabilization process described herein. In the stabilization process, uncharged gaseous matter is used for nitriding or oxidation of doped layers and other material layers. Uncharged gaseous matter includes, but is not limited to, free radicals (e.g., atoms-N, NH2, NH, N3, atoms-O, O3) and excited neutral matter (e.g., N2). * NH3 * or O2 * ) and non-excited neutral substances (e.g., N2, NH3, or O2). Excited neutral substances within non-charged substances can be excited by thermal excitation, electronic excitation, or a combination thereof through excitation processes that can form plasma or activated gas mixtures.

[0027] As used in this specification, the term "radical" or "free radical" refers to an uncharged or valence-neutral atom, molecule, or segment of a molecule having at least one unpaired electron.

[0028] As used in this specification, the term "ion" refers to a charged atom, molecule, or molecular segment formed by gaining or losing at least one electron from a neutral valence state.

[0029] Compared to free radicals and the bond energies listed above (first ionization energy of N2 = 1402 kJ / mol; atomization energy of N2 = 473 kJ / mol), ions are highly chemically reactive, and therefore typically initiate more chemical reactions than free radicals. Free radicals can be selected based on their chemical potential and reaction energy to initiate or participate in certain chemical reactions without participating in others.

[0030] High radical density versus ion density can be achieved using high-pressure plasma processes, for example, pressures from about 0.3 Torr to about 20 Torr (e.g., about 5 Torr or higher). High pressure promotes rapid recombination of ions with electrons, leaving behind neutral radicals and inactivated matter. In some embodiments, a radical gas is formed. In some embodiments, RPS can be used to generate radical matter through various methods. RPS (such as microwave, RF, or thermal systems) can be connected to the processing chamber via delivery lines.

[0031] Demonstration substrate processing system

[0032] Figure 1 The illustration shows a substrate processing system 100. The substrate processing system 100 includes a processing chamber 102 and a precursor activator 180, the precursor activator 180 being coupled to the chamber 102 and used to remotely supply free radicals (such as O2) of plasma to the chamber 102. * The precursor activator 180 can also be used to provide a non-plasma-activated gas mixture, for example, by applying energy to the gas without significantly ionizing it. The chamber 102 has a processing area 113 surrounded by one or more sidewalls 114 (e.g., four sidewalls) and a base 115. The upper portion of the sidewalls 114 can be sealed to the window assembly 117 (e.g., using an O-ring). A radiation energy assembly 118 is positioned on and coupled to the window assembly 117. The radiation energy assembly 118 has a plurality of lamps 119 (which may be halogen tungsten lamps), each lamp mounted in a socket 121 and positioned to emit electromagnetic radiation into the processing area 113. Figure 1 The window assembly 117 has a plurality of short light tubes 141, but the window assembly 117 may be a flat, solid window without any light tubes. The window assembly 117 has an outer wall 116 (such as a cylindrical outer wall) that forms around the periphery of the window assembly 117 and surrounds its edge. The window assembly 117 also has a first window 120 and a second window 122, the first window 120 covering a first end of the light tubes 141 and the second window 122 covering a second end of the light tubes 141 opposite to the first end. The first window 120 and the second window 122 extend to and engage with the outer wall 116 of the window assembly 117 to surround and seal the interior of the window assembly 117, which contains the light tubes 141. In this case, when using light tubes, a vacuum can be created in one of the light tubes 141 by passing through the outer wall 116 via the conduit 153, and that one light tube is then fluidly connected to the rest of the light tubes 141.

[0033] Within chamber 102, substrate 101 is supported by a support ring 162 within processing region 113. The support ring 162 is mounted on a rotatable cylinder 163. During processing, the support ring 162 and substrate 101 are rotated by rotating cylinder 163. The base 115 of chamber 102 has a reflective surface 111 for reflecting energy onto the back side of substrate 101 during processing. Alternatively, a separate reflector (not shown) may be positioned between the base 115 of chamber 102 and the support ring 162. Chamber 102 may include a plurality of temperature probes 171 disposed through the base 115 of chamber 102 to detect the temperature of substrate 101. When using a separate reflector, as described above, the temperature probes 171 are also disposed through the separate reflector for optically receiving electromagnetic radiation from substrate 101.

[0034] The cylinder 163 is supported by a magnetic rotor 164, which is a cylindrical member with a ledge 165 on which the cylinder 163 rests when both members are installed in the chamber 102. The magnetic rotor 164 has a plurality of magnets in a magnet region 166 below the ledge 165. The magnetic rotor 164 is disposed in an annular well 160 located along the base 115 in the peripheral region of the chamber 102. A cover 173 rests on the peripheral portion of the base 115 and extends above the well 160 toward the cylinder 163 and the support ring 162, leaving a tolerance clearance between the cover 173 and the cylinder 163 and / or the support ring 162. The cover 173 generally protects the magnetic rotor 164 from exposure to the process conditions in the processing area 113.

[0035] The magnetic rotor 164 is rotated by magnetic energy from a magnetic stator 167, which is arranged around a base 115. The magnetic stator 167 has a plurality of electromagnets 168, which are powered according to a rotation pattern during processing of the substrate 101 to form a rotating magnetic field that provides magnetic energy to rotate the magnetic rotor 164. The magnetic stator 167 is coupled to a linear actuator 169 by a support 170; in this example, the linear actuator 169 is a screw drive. Operating the linear actuator 169 moves the magnetic stator 167 along an axis 172 of the chamber 102, which in turn moves the magnetic rotor 165, cylinder 163, support ring 162, and substrate 101 along the axis 172.

[0036] Processing gas is supplied to chamber 102 through chamber inlet 175 and discharged through chamber outlet facing outwards, typically along the same plane as chamber inlet 175 and support ring 162. Figure 1(Not shown in the diagram). The substrate enters and exits the chamber 102 through the inlet / outlet 174, which is formed in the sidewall 114 and is shown in the diagram. Figure 1 The following section describes the substrate transport process.

[0037] The precursor activator 180 has a body 182 surrounding an internal space 184 in which an activated precursor mixture 183 of ions, radicals, and electrons can be formed by applying plasma formation energy. A liner 185 made of quartz or sapphire protects the body 182 from the chemical attack of the plasma. The internal space 184 preferably does not have any potential gradient that could attract charged particles, such as ions. A gas inlet 186 is located at a first end 187 of the body 182 and opposite a gas outlet 188 located at a second end 189 of the body 182. When the precursor activator 180 is coupled to a chamber 102, the gas outlet 188 is in fluid communication with the chamber 102 via a delivery line 190 to the chamber inlet 175, such that the radicals of the activated precursor mixture 183 generated within the internal space 184 are supplied to the processing area 113 of the chamber 102. The diameter of gas outlet 188 may be larger than that of gas inlet 186 to allow excited free radicals to be effectively discharged at the desired flow rate and to minimize contact between free radicals and liner 185. If necessary, a separate orifice may be inserted into liner 185 at gas outlet 188 to reduce the internal dimensions of internal space 184 at gas outlet 188. The diameter of gas outlet 188 (or orifice, if used) may be selected to provide a pressure differential between processing zone 113 and precursor activator 180. The pressure differential may be selected to generate a composition of ions, free radicals, and molecules flowing into chamber 102, suitable for the process performed in chamber 102.

[0038] To provide gas for plasma processing, gas source 192 is coupled to gas inlet 186 via a first input of three-way valve 194 and valve 197 for controlling the flow rate of gas released from gas source 192. A second input of three-way valve 194 may be coupled to a second gas source 198. Each of the first gas source 192 and the second gas source 198 may be one or more of, or include one or more of, nitrogen-containing gas, oxygen-containing gas, hydrogen-containing gas, silicon-containing gas, or plasma-forming gas (such as argon or helium). Flow controller 196 is connected to three-way valve 194 to switch the valve between different positions depending on the process to be performed. Flow controller 196 also controls the switching of three-way valve 194.

[0039] Precursor activator 180 can be coupled to an energy source (not shown) to provide excitation energy (such as energy with microwave or RF frequencies) to the precursor activator 180 to activate the process gas moving from gas source 192 into an activated precursor mixture 183. In an example using a nitrogen-containing gas (such as N2), activation in the precursor activator 180 produces N in the internal space 184. * Free radicals, positively charged ions (such as N) + and N2 + And electrons. By positioning the precursor activator 180 away from the processing region 113 of the chamber 102, the substrate's exposure to ions can be minimized. Ions can damage sensitive structures on a semiconductor substrate, while free radicals are reactive and can be used to carry out beneficial chemical reactions. The use of RPS (such as the precursor activator 180) promotes the exposure of the substrate 101 to free radicals and minimizes the substrate 101's exposure to ions.

[0040] Using an angled delivery line 190 promotes ion collisions and reduces the ion concentration in the plasma flowing from the precursor activator 180 to the chamber 102. By using the angled delivery line 190, all or most of the ions generated by the excitation of the process gas become charge-neutral before reaching the processing region 113. Figure 2 A schematic cross-sectional view of delivery line 190 is shown. Delivery line 190 has a mounting sleeve 202 and an inlet member 204 connected to the mounting sleeve 202. Each of the mounting sleeve 202 and inlet member 204 is a hollow body defining a longitudinally extending space, such as a sleeve channel 206 and an inlet channel 208. The cross-sectional profiles of channels 206, 208 can be of any shape, symmetrical or asymmetrical, including but not limited to circular, oval, square, rectangular, or irregular shapes. One end of the mounting sleeve 202 is attached to a gas outlet 188 (partially illustrated) of the body 182 of the precursor activator 180, such that the sleeve channel 206 of the mounting sleeve 202 is aligned with and fluidly coupled to the internal space 184 at the gas outlet 188. The other end of the mounting sleeve 202 is connected to the inlet member 204, such that the inlet channel 208 of the inlet member 204 is substantially aligned with and fluidly coupled to the sleeve channel 206 of the mounting sleeve 202. The inner diameter of the mounting sleeve 202 can be reduced along the longitudinal axis of the mounting sleeve 202 to match both the inner diameter of the precursor activator 180 and the inner diameter of the inlet member 204. The mounting sleeve 202 and the inlet member 204 can be made of materials that do not induce free radicals (such as nitrogen oxides). * O * or H *Materials composed of free radicals. For example, the mounting sleeve 202 and the inlet member 204 may be made of, provided by, or be a liner made of: silicon, silicon oxide (such as quartz), silicon nitride, boron nitride, carbon nitride, sapphire, or aluminum oxide (Al2O3). Although the delivery line 190 is shown and described as two separate components connected to each other (i.e., the mounting sleeve 202 and the inlet member 204), the delivery line 190 may be a single integrated body having a passage connected to the chamber inlet 175 of the chamber 102.

[0041] Figure 3 This is a schematic top view of the substrate processing system 100. An inlet member 204 can be configured as an adapter to couple to a chamber inlet 175 at a sidewall 114 of the chamber 102. The inlet member 204 includes a flange 310 that connects to and extends completely around the outer surface of a delivery line 190 at the sidewall 114. A portion of the inlet member 204 can extend into a recess (not shown) formed in the sidewall 114, such that a surface 312 of the flange 310 is bolted to the recess in the sidewall 114. Alternatively, the recess can be omitted, and the surface 312 of the flange 310 can be bolted to an outer surface 114a of the sidewall 114 and configured such that an inlet passage 208 is fluidly coupled to the chamber inlet 175. In either case, the delivery line 190 is coupled to the chamber inlet 175 in an angled tubular configuration such that the longitudinal axis “A” of the inlet passage 208 in the inlet member 204 and the longitudinal axis “B” of the chamber inlet 175 intersect at an angle θ. The flange 310 extends relative to the longitudinal axis “A” of the inlet passage 208 at the desired angle “α”. When the flange 310 is coupled to the chamber 102 in the recess, the angle α can be selected to provide a clearance between the inlet member 204 and the sidewall 114. The angle α can range from about 20 degrees to about 80 degrees, such as from about 45 degrees to about 70 degrees. The angle θ can range from about 10 degrees to about 70 degrees, such as from about 20 degrees to about 45 degrees. In one example, the angle α is about 45 degrees or higher, for example, about 60 degrees. Positioning the delivery line 190 at an angle relative to the chamber inlet 175 promotes collisions or reactions between ions and electrons or other charged particles during collisions at the inner surface of the chamber inlet 175. As a result, the ion concentration entering the processing region 113 is reduced, and in some cases, substantially reduced to zero.

[0042] In addition to the angled tube structure described above, the length of the delivery line 190 can be selected to promote ion collisions such that, for a given processing gas flow rate (e.g., a given plasma generation rate), the residence time of the plasma in the delivery line 190 is substantially longer than the average recombination time of ions with electrons in the plasma. The length of the delivery line 190 (and / or the internal space 184 of the precursor activator 180) required to eliminate substantially all ions from the plasma at a given source gas flow rate can be determined experimentally or through lifecycle calculations. In one embodiment, the length of the internal space 184 is from about 5 inches to about 12 inches, for example, about 8 inches, and the inner diameter is from about 0.5 inches to about 3 inches, for example, about 2 inches. The length of the delivery line 190 (including the sleeve and inlet channels 206, 208) can be from 5 inches to about 25 inches, for example, about 12 inches. The diameters of channels 206, 208 can be selected to optimize the pressure differential between the precursor activator 180 and the processing region 113. In one embodiment, each of channels 206, 208 has a diameter of approximately 0.5 inches to approximately 2 inches, for example, approximately 0.6 inches for inlet channel 208 and approximately 0.8 inches for sleeve channel 206. One or both of channels 206, 208 may have a diameter that gradually decreases, gradually increases, or is uniform in the flow direction to facilitate ion loss. The total length of the internal space 184 and the delivery line 190 is between approximately 8 inches and approximately 35 inches, for example, approximately 20 inches.

[0043] Figure 4 This is a schematic top view of a portion of the substrate processing system 100 near the chamber inlet. (See diagram.) Figure 3 As shown, the chamber entrance 175 can be approximately cylindrical. Figure 4An alternative chamber inlet 475 is illustrated, which is generally elongated or flattened conical in shape. Box 430 includes chamber inlet 475. Chamber inlet 475 is an airflow passage from inlet channel 208 to processing space 113. Box 430 is disposed within the sidewall 114 of chamber 102. As shown, the longitudinal section of chamber inlet 475 generally defines an isosceles triangle (or a portion thereof) centered on the longitudinal axis "B" and having sides 478 and 479 of equal length. The longitudinal axis "B" extends along the radius of processing area 113. The vertices of the isosceles triangle lie on axis "B," and the axis bisects the base of the isosceles triangle. Therefore, the height of the isosceles triangle is measured along the longitudinal axis "B," and sides 478 and 479 bisect from axis "B" at equal angles. As previously described, chamber inlet 475 is fluidly coupled to inlet passage 208 of inlet member 204 at an opening 476, approximately near the vertex of the isosceles triangle. The lateral dimension of chamber inlet 475 at opening 476 can be approximately 0.6 inches to approximately 1.0 inch, for example, approximately 0.8 inches. Chamber inlet 475 is fluidly coupled to processing area 113 at or near the base of the isosceles triangle at the inner end 477. The length of the base of the isosceles triangle can be measured along the inner end 477 between the intersection of sides 478 and 479 and the inner end 477. Chamber inlet 475 may have a cross-sectional area at the inner end 477, which can be of any shape, symmetrical or asymmetrical, including but not limited to generally oval, ellipsoidal, oblong, stadium-shaped, and / or rounded-rectangular shapes. The cross-sectional area at the inner end 477 may have a bottom edge length of about 2.5 inches to about 3.5 inches (e.g., about 3 inches) and a width of about 0.4 inches to about 0.8 inches (e.g., about 0.6 inches).

[0044] Gas outlet 188 ( Figure 2The chamber 102 is maintained in fluid communication via delivery line 190 (here coupled to chamber inlet 475) so that the free radicals of the activated precursor mixture 183 generated within the internal space 184 are supplied to the processing region 113 of chamber 102. In some embodiments, the longitudinal section of chamber inlet 475 defines a scalene triangle, wherein sides 478 and 479 have unequal lengths and are bisected at angles unequal to the longitudinal axis “B”, such that the longitudinal axis “B” passes through the vertex but does not bisect the inner end 477. As previously stated, the diameter of each channel 206, 208 is approximately 0.5 inches to approximately 2 inches, for example, approximately 0.6 inches for inlet channel 208 and approximately 0.8 inches for cannulated channel 206. It is currently believed that the delivery line 190, having a larger diameter than inlet channel 208, could create a choke point at the junction between channels 206, 208. This blockage point can increase the pressure in the precursor activator 180 and / or cause or increase volume-surface recombination.

[0045] The delivery line 190 is coupled to the chamber inlet 475 in an angled configuration such that the longitudinal axis "A" of the inlet channel 208 and the longitudinal axis "B" of the chamber inlet 475 intersect at an angle θ. The angle θ can range from approximately 10 degrees to approximately 70 degrees, for example, approximately 20 degrees and approximately 45 degrees. The longitudinal axis "A" intersects the side 478 of the triangular longitudinal section of the chamber inlet 475 at a point 478-p near the opening 476. Positioning the delivery line 190 at an angle relative to the chamber inlet 475 promotes collisions or reactions between ions and electrons or other charged particles during collisions at the inner surface of the chamber inlet 475. Therefore, the ion concentration entering the processing region 113 is reduced, and in some cases, substantially reduced to zero.

[0046] It should be understood that box 430 (and boxes 530, 630, and 730 discussed below) traverses the side wall 114 with the chamber entrance 175. Figure 1 It is set in the same way in the side wall 114 of the chamber 102.

[0047] The inlet channel 208 and / or chamber inlet 475 can be made from a solid quartz sheet using a drilling process. Multiple holes can be used to accommodate the required drill depth and / or entry angle, resulting in one or more surface irregularities. For example, as... Figure 4As shown, the vertex of the triangular longitudinal section of the chamber inlet 475 is not a singular point. Instead, a protruding irregular portion 476-b can be seen at the coupling between the inlet channel 208 and the chamber inlet 475. These irregular features can be convex or concave. Compared to the proximal solid features, such irregular features are expected to be small (e.g., 10% or less in size). For clarity, the discussion of such irregular features will be limited in the remainder of this disclosure. However, it should be understood that the use of terms such as “straight” or “smooth” or similar terms takes into account the presence of small irregular features.

[0048] Figure 5 This is another schematic top view of the chamber inlet portion of the substrate processing system 100. (See attached image.) Figure 3 As shown, the entrance channel 208 can be approximately cylindrical. Figure 5 An alternative inlet channel 508 for inlet member 504 is illustrated, which typically includes a cylindrical portion 507 and a tapered portion 509, the tapered portion 509 being generally elongated or flattened in cone shape. The cylindrical portion 507 transitions to the tapered portion 509 such that the cross-sectional area of ​​the inlet channel 508 increases monotonically from the coupling with mounting sleeve 202 to the coupling with chamber 102. As shown, the transition from the cylindrical portion 507 to the tapered portion 509 can create a transition point 508-p, which can manifest as a corner or angle in the wall of the inlet channel 508. Mounting sleeve 202 is connected to inlet member 504 such that the cylindrical portion 507 of the inlet channel 508 is substantially aligned with and fluidly coupled to the sleeve channel 206 of mounting sleeve 202.

[0049] Figure 5An alternative chamber inlet 575 with a longitudinal section is illustrated, which generally defines a trapezoidal shape. A housing 530 includes the chamber inlet 575. The housing 530 is disposed within the sidewall 114 of the chamber 102. A longitudinal axis “B” extends along the radius of the processing area 113 and bisects the inner end 577 of the trapezoid. The length of the base of the trapezoid can be measured along the inner end 577. The height of the trapezoid can be measured along the longitudinal axis “B”. The chamber inlet 575 is connected to the inlet member 504 such that the tapered portion 509 of the inlet passage 508 is substantially aligned with and fluidly coupled to the outer end 576 of the trapezoidal longitudinal section of the chamber inlet 575. The top length of the trapezoid can be measured along the outer end 576. The top length of the trapezoid may be less than or equal to its base length. The chamber inlet 575 may have a cross-sectional area at its outer end 576, which may be of any shape, symmetrical or asymmetrical, including but not limited to generally oval, elliptical, oblong, stadium-shaped, and / or rounded rectangular shapes. The chamber inlet 575 is coupled and fluidly connected to the processing area 113 at the trapezoidal inner end 577. The chamber inlet 575 may have a cross-sectional area at its inner end 577, which may be of any shape, symmetrical or asymmetrical, including but not limited to generally oval, elliptical, oblong, stadium-shaped, and / or rounded rectangular shapes. The cross-sectional area at the outer end 576 may be less than or equal to the cross-sectional area at the inner end 577. The wall of the tapered portion 509 may be aligned with the edge 579 of the chamber inlet 575. For example, the wall of the tapered portion 509 of the inlet channel 508 may be aligned with the edge 579 of the chamber inlet 575 to form a smooth, linear surface from point 508-p to the inner end 577. In some embodiments, the smooth, linear surface is aligned with the radius passing through the center of the processing region 113. In the illustrated embodiment, the side 579 of the trapezoidal longitudinal section of the chamber inlet 575 forms a right angle with both the outer end 576 and the inner end 577. In other embodiments, the side 579 may form an angle between about 75° and about 105° with the outer end 576 and / or the inner end 577.

[0050] The delivery line 190 is coupled to the chamber inlet 575 in an angled configuration such that the longitudinal axis "A" of the cylindrical portion 507 of the inlet channel 508 and the longitudinal axis "B" of the chamber inlet 575 intersect at an angle θ. The angle θ can range from about 10 degrees to about 70 degrees, for example, about 20 degrees and about 45 degrees. In some embodiments, the longitudinal axis "A" is parallel to and aligned with the axis "C" of the side 578 of the trapezoidal longitudinal section of the chamber inlet 575. In other embodiments (not shown), the longitudinal axis "A" forms an angle between about 160° and about 200° with the axis "C". In embodiments where the longitudinal axis "A" forms an angle less than about 180° with the axis "C", the longitudinal axis "A" intersects the side 578 of the trapezoidal longitudinal section of the chamber inlet 575 at a point 578-p near the outer end 576. In embodiments where the vertical axis "A" and axis "C" form an angle greater than approximately 180°, the vertical axis "A" will not intersect with the side 578 of the trapezoid. Positioning the delivery line 190 at an angle relative to the chamber inlet 575 promotes collisions or reactions between ions and electrons or other charged particles during collisions at the inner surface of the chamber inlet 575. Therefore, the ion concentration entering the processing region 113 is reduced, and in some cases substantially reduced to zero.

[0051] It should be understood that the inlet member 504 is coupled to the mounting sleeve 202 in the same manner as the inlet member 204 is coupled to the mounting sleeve 202. Therefore, it is expected that the mounting sleeve 202 can undergo minimal (if any) modifications to accommodate the inlet member 504.

[0052] Figure 6 Another schematic top view is a part of the substrate processing system 100 near the chamber inlet. Figure 6An alternative chamber inlet 675 with a longitudinal section is illustrated, which generally defines a modified trapezoidal shape with a curved edge 678. A housing 630 includes the chamber inlet 675. The housing 630 is disposed within the sidewall 114 of the chamber 102. The curved edge 678 is aligned with the wall of the tapered portion 509 at its outer end 676, and curves inward toward edge 679 as it approaches the inner end 677. A longitudinal axis “B” extends along the radius of the processing area 113 and bisects the inner end 677. The length of the base of the modified trapezoid can be measured along the inner end 677. The height of the modified trapezoid can be measured along the longitudinal axis “B”. The chamber inlet 675 is connected to the inlet member 504 such that the tapered portion 509 of the inlet channel 508 is substantially aligned with and fluidly coupled to the outer end 676 of the trapezoidal longitudinal section of the chamber inlet 675. The top length of the modified trapezoid can be measured along the outer end 676. The top length of the modified trapezoid may be less than or equal to its base length. Note that, compared to the chamber inlet 575, the base length measured along the inner end 677 may be less than the base length measured along the inner end 577 due to the intrusion of the curved edge 678. The chamber inlet 675 may have a cross-sectional area at the outer end 676, which can be of any shape, symmetrical or asymmetrical, including but not limited to generally oval, elliptical, oblong, stadium-shaped, and / or rounded rectangular shapes. The chamber inlet 675 is coupled and fluidly connected to the processing area 113 at the inner end 677 of the modified trapezoid. The chamber inlet 675 may have a cross-sectional area at its inner end 677, which may be of any shape, symmetrical or asymmetrical, including but not limited to generally oval, elliptical, oblong, stadium-shaped, and / or rounded rectangular shapes. The cross-sectional area at the outer end 676 may be less than or equal to the cross-sectional area at the inner end 677. The wall of the tapered portion 509 may be aligned with the edge 679 of the chamber inlet 675. For example, the wall of the tapered portion 509 of the inlet channel 508 may be aligned with the edge 679 of the chamber inlet 675 to form a smooth linear surface from point 508-p to the inner end 677. In some embodiments, the smooth linear surface is aligned with a radius passing through the center of the processing region 113. In the illustrated embodiment, the edge 679 of the modified trapezoidal longitudinal section of the chamber inlet 675 forms a right angle with both the outer end 676 and the inner end 677. In other embodiments, edge 679 may form an angle between about 75° and about 105° with outer end 676 and / or inner end 677.

[0053] The delivery line 190 is coupled to the chamber inlet 675 in an angled configuration such that the longitudinal axis "A" of the cylindrical portion 507 of the inlet channel 508 and the longitudinal axis "B" of the chamber inlet 675 intersect at an angle θ. The angle θ can be in the range of approximately 10 degrees to approximately 70 degrees, for example, approximately 20 degrees and approximately 45 degrees. The curvature of the bend 678 can at least partially determine the point 678-p, where the longitudinal axis "A" of the cylindrical portion 507 of the inlet channel 508 intersects the bend 678 at point 678-p. For example, when the bend 678 is only slightly curved, the longitudinal axis "A" intersects the bend 678 near the inner end 677. When the bend 678 has a larger curvature, the longitudinal axis "A" intersects the bend 678 near the outer end 676. Measured along the longitudinal axis "B", point 678-p can be approximately 10% to approximately 60% of the height of the modified trapezoid starting from the outer end 676. Positioning the delivery line 190 at an angle relative to the chamber inlet 675 promotes collisions or reactions between ions and electrons or other charged particles during collisions at the inner surface of the chamber inlet 675. Therefore, the ion concentration entering the processing region 113 is reduced, in some cases substantially reduced to zero.

[0054] Figure 7 Another schematic top view is a part of the substrate processing system 100 near the chamber inlet. Figure 7An alternative chamber inlet 775 with a longitudinal section that generally defines a rectangular shape is illustrated. A housing 730 includes the chamber inlet 775. The housing 730 is disposed within the sidewall 114 of the chamber 102. A longitudinal axis “B” extends along the radius of the processing area 113 and bisects the inner end 777. The length of the base of the rectangle can be measured along the inner end 777. The height of the rectangle can be measured along the longitudinal axis “B”. The chamber inlet 775 is connected to the inlet member 504 such that the tapered portion 509 of the inlet passage 508 is substantially aligned with and fluidly coupled to a portion of the outer end 776 of the rectangular longitudinal section of the chamber inlet 775. The top length of the rectangle can be measured along the outer end 776, from side 778 to side 779. The top length of the rectangle may be equal to its base length. The chamber inlet 775 may have a cross-sectional area at its outer end 776, which may be of any shape, symmetrical or asymmetrical, including but not limited to generally oval, elliptical, oblong, stadium-shaped, and / or rounded rectangular shapes. The chamber inlet 775 is coupled and fluidly connected to the processing area 113 at its rectangular inner end 777. The chamber inlet 775 may have a cross-sectional area at its inner end 777, which may be of any shape, symmetrical or asymmetrical, including but not limited to generally oval, elliptical, oblong, stadium-shaped, and / or rounded rectangular shapes. The cross-sectional area of ​​the coupling at the outer end 776 may be less than or equal to the cross-sectional area at the inner end 777. Note that the cross-sectional area of ​​the inner end 777 may be approximately equal to, and greater than, the cross-sectional area of ​​the inner end 677, compared to chamber inlets 575 and 675. The wall of the tapered portion 509 may be aligned with the edge 779 of the chamber inlet 775. For example, the wall of the tapered portion 509 of the inlet channel 508 may be aligned with the edge 779 of the chamber inlet 775 to form a smooth linear surface from point 508-p to the inner end 777. In some embodiments, the smooth linear surface is aligned with a radius passing through the center of the processing region 113. In the illustrated embodiment, the edge 779 of the rectangular longitudinal section of the chamber inlet 775 forms a right angle with both the outer end 776 and the inner end 777. In other embodiments, the edge 779 may form an angle between about 75° and about 105° with the outer end 776 and / or the inner end 777. In other embodiments, both sides 778 and 779 may form an angle between about 75° and about 105° with the outer end 776 and / or the inner end 777, thereby creating a rhomboid longitudinal section of the chamber inlet 775.

[0055] The delivery line 190 is coupled to the chamber inlet 775 in an angled configuration, such that the longitudinal axis "A" of the cylindrical portion 507 of the inlet channel 508 and the longitudinal axis "B" of the chamber inlet 775 intersect at an angle θ. The angle θ can range from approximately 10 degrees to approximately 70 degrees, such as from approximately 20 degrees to approximately 45 degrees. In some embodiments, the height of the trapezoidal longitudinal section of the chamber inlet 575 is approximately equal to the height of the rectangular longitudinal section of the chamber inlet 775, and the length of the base measured along the inner end 577 is approximately equal to the length of the base measured along the inner end 777. In such embodiments, it should be understood that the longitudinal axis "A" of the cylindrical portion 507 of the inlet channel 508 may not intersect with the side 778, or may intersect with the side 778 only at the inner end 777 or at a point near the inner end 777 (e.g., point 778-p). In some embodiments, the length of the base measured along the inner end 777 is less than the length of the base measured along the inner end 577, and the longitudinal axis "A" may intersect the edge 778 at a point substantially far from the inner end 777. Positioning the delivery line 190 at an angle relative to the chamber inlet 775 promotes collisions or reactions between ions and electrons or other charged particles during collisions at the inner surface of the chamber inlet 775. Therefore, the ion concentration entering the processing region 113 is reduced, in some cases substantially reduced to zero.

[0056] Other configurations of delivery lines 190 and chamber 102 that provide similar benefits are conceivable. When the precursor activator 180 is coupled to chamber 102, gas outlet 188 is in fluid communication with chamber 102 via delivery line 190 to chamber inlets (e.g., chamber inlets 175, 475, 575, 675, 775), such that free radicals of the activated precursor mixture 183 generated within internal space 184 are supplied to processing region 113 of chamber 102. Each configuration may include an inlet member (e.g., inlet member 204, 504) serving as an adapter, fluidly coupling the tubular sleeve passage 206 of mounting sleeve 202 to the chamber inlet of chamber 102. The diameter and / or internal volume of the inlet member may be selected to optimize the pressure differential between precursor activator 180 and processing region 113. Selectable pressure differentials can be used to generate a composition of ions, radicals, and molecules flowing into chamber 102, suitable for a process performed in chamber 102. Each configuration may also include a chamber inlet that receives and distributes the process gas to the processing region 113 of chamber 102. Delivery line 190 may be positioned at an angle relative to the chamber inlet. For example, the longitudinal axis “A” of delivery line 190 may be positioned at an angle θ to the longitudinal axis “B” of the chamber inlet, wherein the longitudinal axis “B” extends along the radius of the processing region 113 and typically passes through the midpoint (e.g., bisecting point) of the inner end (e.g., base) of the longitudinal profile (e.g., triangle, modified triangle, trapezoid, modified trapezoid, rectangle, modified rectangle, rhombus, modified rhombus) of the chamber inlet. Positioning delivery line 190 at an angle relative to the chamber inlet promotes collisions or reactions of ions with electrons or other charged particles during collisions at the inner surface of the chamber inlet. Therefore, the ion concentration entering the treatment zone 113 is reduced, and in some cases, it is reduced to virtually zero.

[0057] Experimental results

[0058] Already tested using simulated scenarios, such as Figures 4 to 7 The hardware and components are shown. To gain additional confidence in the simulation results, they have been adjusted based on flow trends and overall O. * The trend of pressure and flow changes in the free radical area-weighted average was validated using the same 3D model. Figure 8 This is a graph showing the results of a simulation experiment, plotted at various points on the substrate surface of chamber 102 in the substrate processing system 100, measured by the concentration of O free radicals. Result 804 is from... Figure 4 The model of the substrate processing system 100 shown has an inlet member 204 (i.e., a generally cylindrical inlet channel) and a chamber inlet 475 (i.e., a generally triangular longitudinal section). Result 805 is from... Figure 5The model of the substrate processing system 100 shown has an inlet member 504 (i.e., an inlet channel having a generally cylindrical portion and a generally conical portion) and a chamber inlet 575 (i.e., a generally trapezoidal longitudinal section). Result 806 is from Figure 6 The model shown is of a substrate processing system 100, which includes an inlet member 504 and a chamber inlet 675 (i.e., a modified trapezoidal longitudinal section). Result 807 is from... Figure 7 The model of the substrate processing system 100 shown has an inlet member 504 and a chamber inlet 775 (i.e., a generally rectangular longitudinal section). Figure 9 This is a plot showing the area-weighted average of the O radical concentrations for each model. Result 904 is from... Figure 4 The model shown is of a substrate processing system 100, which includes an inlet member 204 and a chamber inlet 475. Result 905 is from... Figure 5 The model shown is of a substrate processing system 100, which includes an inlet member 504 and a chamber inlet 575. Result 906 is from... Figure 6 The model shown is of a substrate processing system 100, which includes an inlet member 504 and a chamber inlet 675. Result 907 is from... Figure 7 The model of the substrate processing system 100 shown has an inlet member 504 and a chamber inlet 775. As can be seen in each graph, the model with inlet member 504 and chamber inlet 775 provides the highest O radical concentration in the processing space. It is currently believed that increasing the internal cross-sectional area of ​​the inlet member and increasing the internal cross-sectional area of ​​the coupling element to the chamber inlet can reduce the back pressure at the RPS outlet by up to 50%. Furthermore, the reduced back pressure can help increase the O radical concentration on the wafer due to less gas phase recombination.

[0059] Experimental simulation drawing Figures 4 to 7 A comparison of velocities at the entry point (above the wafer) within the chambers of the substrate processing system 100 shown. This simulation represents... Figures 5 to 7 The lower speed in the model can help to better diffuse the gas onto the wafer, which will increase the number of O radicals on the wafer.

[0060] Experimental simulation drawing Figures 4 to 7 A comparison of the velocities on the cutting plane of the chambers between the substrate processing systems 100 shown. This simulation indicates that, due to... Figure 4 In the substrate processing system 100, the direct line of sight from the RPS to the chamber (along the longitudinal axis "A") shows that only a portion of the cone is utilized, while the other half flows back from the chamber. These velocity profiles indicate that altering the geometry of the inlet member can help reduce the velocity at the entry point within the chamber, resulting in better flow and higher O2 on the wafer.* Free radical concentration.

[0061] These experimental results indicate that the disclosed configuration of the inlet components and chamber inlets improves the availability of free radicals on the wafer by reducing or minimizing volume-surface recombination. Specifically, the experimental results show that... Figure 6 The disclosed configuration has an inlet member 504 (i.e., an inlet channel having a generally cylindrical portion and a generally conical portion) and a chamber inlet 675 (i.e., a modified trapezoidal longitudinal section), which provides a higher... Figure 4 The disclosed configuration showed a high oxide growth rate of 17.2%.

[0062] These experimental results indicate that the increased cross-sectional area from the delivery line end at the chamber inlet to the processing volume end reduces O during substrate processing. * Free radical volume-surface recombination and / or increased oxide growth rate. These experimental results indicate that, as described herein, the use of chamber inlets and / or inlet components can improve wafer uniformity.

[0063] Further experimental results indicate that the oxide growth rate can be improved, and / or the oxide thickness can be increased within the same processing time. Figure 10 The diagram shows representative results from the oxide growth rate experiment. The Y-axis represents the oxide thickness after the same treatment time. The left side represents... Figure 4 The configuration result, the right side represents Figure 6 The result of the configuration.

[0064] In one embodiment, the substrate processing system includes: a delivery line coupled between a processing chamber and a remote plasma source; the processing chamber including sidewalls; and a chamber inlet assembly disposed in the sidewalls, the chamber inlet assembly including: a chamber inlet; an external coupling coupled to the delivery line; an internal coupling for a processing area of ​​the processing chamber, the internal coupling and the external coupling being located at an inner end and an outer end of the chamber inlet, respectively, wherein the cross-sectional area of ​​the internal coupling is larger than the cross-sectional area of ​​the external coupling; a longitudinal section including an inner end and an outer end, and a first side and a second side located on opposite sides of the chamber inlet, wherein the shape of the longitudinal section includes at least one of the following: triangle, modified triangle, trapezoid, modified trapezoid, rectangle, modified rectangle, rhombus, and modified rhombus; and a box including the chamber inlet and configured to be disposed in the sidewalls.

[0065] In one or more embodiments disclosed herein, the longitudinal axis of the chamber inlet extends from the center of the processing area through the inner end and to the external coupling, the longitudinal axis of the delivery line is parallel to the delivery line, the longitudinal axis of the delivery line extends from the delivery line and through the external coupling, and the longitudinal axis of the chamber inlet forms an angle between 10 degrees and 70 degrees with the longitudinal axis of the delivery line.

[0066] In one or more embodiments disclosed herein, the longitudinal axis of the delivery line intersects the first side at a point between the inner and outer ends.

[0067] In one or more embodiments disclosed herein, the first side is curved.

[0068] In one or more embodiments disclosed herein, when the first side approaches the internal coupling member, the first side aligns with the delivery line at the external coupling member and bends toward the second side.

[0069] In one or more embodiments disclosed herein, the first side is straight and aligned with the inner wall of the delivery pipeline.

[0070] In one or more embodiments disclosed herein, the first side is straight and forms an angle of less than 180° with the inner wall of the delivery pipeline.

[0071] In one or more embodiments disclosed herein, the length of the external coupling is less than the length of the external end.

[0072] In one or more embodiments disclosed herein, the cross-sectional area of ​​the internal coupling is larger than that of the external coupling, which reduces volume-surface rebonding during substrate processing.

[0073] In one or more embodiments disclosed herein, the cross-sectional area of ​​the internal coupling is larger than that of the external coupling, which increases the oxide growth rate during substrate processing.

[0074] In one embodiment, a substrate processing system includes: a processing chamber; and a delivery line coupled between the processing chamber and a precursor activator, the delivery line including: a mounting sleeve coupled to the precursor activator; and an inlet member including: a first end coupled to the mounting sleeve; a second end coupled to the processing chamber; and an inlet channel extending from the first end to the second end, wherein: the inlet channel includes a cylindrical portion near the first end, the inlet channel includes a tapered portion near the second end, and a first cross-sectional area at the first end is smaller than a second cross-sectional area at the second end.

[0075] In one or more embodiments disclosed herein, the inner wall of the entrance channel includes an angle from which a cylindrical portion transitions to a tapered portion.

[0076] In one or more embodiments disclosed herein, the substrate processing system further includes: a chamber inlet disposed in a sidewall of a processing chamber, the chamber inlet including: an external coupling to a delivery line; an internal coupling for a processing area of ​​the processing chamber, the internal coupling and the external coupling being located at an inner end and an outer end of the chamber inlet, respectively; and a longitudinal section including an inner end and an outer end, as well as a first side and a second side, the first side and the second side being located on opposite sides of the chamber inlet, wherein the wall of the tapered portion is aligned with the second side of the chamber inlet to form a linear surface from that angle to the inner end.

[0077] Although the foregoing description relates to the implementation of this disclosure, other and further implementations of this disclosure may be designed without departing from the basic scope of this disclosure, and the scope of this disclosure is determined by the appended claims.

Claims

1. A chamber inlet assembly for coupling a delivery pipeline fluid to a processing area of ​​a processing chamber, the chamber inlet assembly comprising: The main entrance includes: Height dimensions; The axial dimension perpendicular to the height dimension; The width dimension that is perpendicular to both the height dimension and the axial dimension; The central plane at the center of the inlet body along the height and axial dimensions; The first end has a first opening; and The second end has a second opening, wherein: The first end is positioned opposite the second end along the axial dimension. The first cross-sectional area of ​​the first opening is smaller than the second cross-sectional area of ​​the second opening. The first opening is asymmetrical with respect to the central plane, having a larger portion of the first cross-sectional area on a first side of the central plane, and The second opening is symmetrical with respect to the central plane; and An internal cavity is disposed within the inlet body to fluidly couple the first opening to the second opening, the internal cavity comprising: The first edge extending between the first opening and the second opening along the axial and width dimensions; and A second edge extending between the first opening and the second opening along the axial and width dimensions, wherein: The first edge is positioned opposite the second edge along the width dimension. The first edge is on the first side of the central plane, and The first edge is shorter than the second edge.

2. The chamber inlet assembly of claim 1, wherein the second edge is curved.

3. The chamber inlet assembly of claim 2, wherein the second edge is aligned with the delivery line at the first end, and the second edge bends toward the first edge as it approaches the second end.

4. The chamber inlet assembly of claim 1, wherein the second edge is straight and aligned with the inner wall of the delivery line.

5. The chamber inlet assembly of claim 1, wherein the second edge is straight and forms an angle of less than 180° with the inner wall of the delivery line.

6. The chamber entrance assembly of claim 1, wherein the length of the first opening is less than the length of the first end.

7. The chamber entrance assembly of claim 1, wherein the second end of the entrance body is concave along the axial and width dimensions.

8. An inlet component assembly for fluidly coupling a mounting sleeve of a delivery line to a processing chamber, the inlet component assembly comprising: The main entrance component includes: Height dimensions; The axial dimension perpendicular to the height dimension; The width dimension that is perpendicular to both the height dimension and the axial dimension; The first end having a first opening; The second end has a second opening; and Along the axial dimension at the center of the first opening and perpendicular to the central axis of the first opening, wherein: The first end is positioned opposite the second end along the axial dimension, and The first cross-sectional area of ​​the first opening is smaller than the second cross-sectional area of ​​the second opening; and An internal cavity is provided within the main body of the inlet component and fluidly couples the first opening to the second opening, wherein: The central axis and the second opening form an acute angle along the axial dimension and the width dimension, and the acute angle is located within the internal cavity. The first portion of the internal cavity near the second end is asymmetrical relative to the central axis, with a larger cross-sectional dimension on the side of the central axis corresponding to the acute angle. The second portion of the internal cavity near the first end is symmetrical with respect to the central axis.

9. The inlet component assembly of claim 8, wherein the cross-sectional area of ​​the internal cavity increases monotonically from the coupling member with the mounting sleeve to the coupling member with the processing chamber.

10. The inlet component assembly of claim 9, wherein the wall of the internal cavity includes an angle from the first portion to the second portion.

11. The inlet component assembly of claim 8, wherein the first cross-sectional area is circular.

12. A chamber inlet assembly for coupling a delivery pipeline fluid to a processing area of ​​a processing chamber, the chamber inlet assembly comprising: The entrance body includes: The first end defines a first opening, which is asymmetrically arranged with respect to the axial center line of the entrance body; The second end is disposed opposite to the first end along the axial centerline, and the second end defines a second opening. The second opening is symmetrically positioned relative to the axial centerline and has a cross-sectional area larger than that of the first opening. An internal cavity, disposed within the inlet body, includes: A first inner sidewall extends from the first end along a first direction to the second end; and A second inner sidewall extends from the first end along a second direction to the second end, the second inner sidewall being opposite to the first inner sidewall and positioned not parallel to the first inner sidewall.

13. The chamber entrance assembly of claim 12, wherein the first inner sidewall is shorter than the second inner sidewall.

14. The chamber inlet assembly of claim 13, wherein: The first inner sidewall is on the first side of the axial centerline, and The first portion of the cross-sectional area of ​​the first opening on the first side of the axial centerline is larger.

15. The chamber entrance assembly of claim 13, wherein the second inner sidewall is curved.

16. The chamber inlet assembly of claim 15, wherein the second inner sidewall is aligned with the delivery line at the first end, and the second inner sidewall bends toward the first inner sidewall as it approaches the second end.

17. The chamber inlet assembly of claim 13, wherein the second inner sidewall is straight and aligned with the inner wall of the delivery line.

18. The chamber inlet assembly of claim 13, wherein the second inner sidewall is straight and forms an angle of less than 180° with the inner wall of the delivery line.

19. The chamber entrance assembly of claim 13, wherein the length of the first opening is less than the length of the first end.

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