A method for rapid evaporation of electrodes and its use in optoelectronic devices

Abstract

The application discloses a method for rapidly evaporating electrodes and application of the method in photoelectric devices. The preparation method of the photoelectric device comprises the following steps: using a solution method, sequentially preparing a first interface layer, a functional material layer and a second interface layer on a substrate, and then rapidly evaporating and depositing a counter electrode on the second interface layer; the photoelectric device is a reverse structure; and the spin coating preparation of the second interface layer is completed in 0.5-1 min. The method is suitable for the preparation of reverse, rapidly evaporated photoelectric devices such as organic solar cells, perovskite solar cells, quantum dot cells, organic electroluminescent displays and organic field effect transistors, and is suitable for large-scale production and preparation of applications in clothes, vehicle windows, wall surfaces, windows and electronic products.

Description

Technical Field

[0001] This invention relates to a method for rapid electrode deposition and its application in optoelectronic devices, belonging to the field of optoelectronic devices. Background Technology

[0002] Organic photovoltaics (OPV) has attracted extensive research and development due to its potential as a low-cost renewable energy source. The emergence of organic solar cells based on solution processing represents a transformative technology for manufacturing solar energy. These cells are fabricated from low-energy-input, non-toxic, and globally abundant materials using a roll-to-roll process that can be mass-produced. Currently, organic solar cells have achieved significant progress, with energy conversion efficiencies exceeding 18% in small-area devices [Sci. Bull. 2020. 65, 272–275.]. Furthermore, due to its mechanical flexibility and lightweight properties, roll-to-roll manufacturing has been initially applied to portable battery chargers. However, its application on large-area rooftops in residential and commercial buildings has not yet been implemented. Therefore, the large-scale production of organic photovoltaic cells remains a pressing issue.

[0003] To achieve these performance goals, progress is needed in the design of novel photoactive materials, as well as the development of more efficient device processing methods and stable device structures. Furthermore, interface engineering plays a crucial role in the performance of organic photovoltaic devices. Developing novel interface materials with the required electrical properties and compatibility for large-scale fabrication for solution-processed multilayer devices, along with new active materials, are essential for further improving the efficiency and stability of organic photovoltaics, and enabling the rapid deposition of counter electrodes on solution-processed interface layers.

[0004] However, current interface layer materials used in organic solar cells cannot meet the requirements for rapid deposition of counter electrodes and high photoelectric conversion efficiency. The main reason is that these interface layer materials are not resistant to high temperatures and rapid metal atom bombardment, leading to structural damage. This results in the loss of interface modification function, which is detrimental to achieving high photoelectric conversion efficiency.

[0005] Therefore, it is necessary to develop a novel interface layer that is compatible with solution processing methods and can withstand rapid evaporation of the counter electrode on it, which would greatly save the processing time of solar cells and enable large-scale fabrication. Summary of the Invention

[0006] The purpose of this invention is to provide a method for rapid electrode deposition and its application in large-scale production. This invention uses a solution processing method, which is convenient to operate and can rapidly deposit electrodes on the interface layer. This invention has the characteristics of simple process, good air stability, and mass production capability, and can be used in the large-scale production and preparation process of optoelectronic devices.

[0007] The method for fabricating an optoelectronic device provided by this invention includes the following steps:

[0008] A solution method was used to sequentially prepare a first interface layer, a functional material layer, and a second interface layer on a substrate, and then a counter electrode was rapidly deposited by vapor evaporation on the second interface layer.

[0009] The optoelectronic device has a reverse structure.

[0010] In the above preparation method, the spin-coating of the second interface layer can be completed in 0.5 to 1 minute, under the following conditions:

[0011] The spin coating speed is 1000–3000 rpm. For example, at 3000 rpm, the solution concentration can be 0.1–10 mg / mL, such as 5 mg / mL.

[0012] The second interface layer prepared by solution method can withstand rapid evaporation of the counter electrode on it, and the evaporation deposition rate of the counter electrode can be [missing information]. For example, the deposition of the 100nm thick counter electrode can be completed within 0.5 minutes. However, when depositing the second interface layer, it can only be done at a slow speed (e.g., The deposition process is performed, but the resulting interface layer cannot withstand rapid deposition of the counter electrode on top of it. The deposition rate of the counter electrode needs to be controlled. For example, the deposition of the counter electrode with a thickness of 100 nm can be completed in about 30 minutes.

[0013] In the above preparation method, the thickness of the first interface layer and the second interface layer is 0-200 nm, but not zero, preferably 10-30 nm;

[0014] The thickness of the functional material layer is 10–1000 nm, such as 90–130 nm or 100 nm;

[0015] The thickness of the counter electrode is 0–3000 nm, but not zero, preferably 50–100 nm or 100 nm.

[0016] In the above preparation method, the substrate material is selected from any of the following:

[0017] Silicon (Si), indium tin oxide (ITO), fluorine-doped tin oxide (FTO), aluminum-doped zinc oxide (AZO), gold (Au), silver (Ag) nanowires and composite electrodes;

[0018] The material of the first interface layer is selected from any of the following:

[0019] Lithium fluoride, zinc oxide, tungsten oxide, molybdenum trioxide, vanadium pentoxide, nickel oxide, titanium complexes, PEDOT:PSS, PFN, calcium, magnesium, barium, aluminum, silver, gold, copper, nickel, zinc, titanium, manganese, iron, platinum and molybdenum;

[0020] The second interface layer is made of an organic-inorganic composite material;

[0021] The organic phase in the organic-inorganic composite material can be PCP3B (poly[4,4”-terphenyl-alt-cyclopenta[2,1-b:3,4-b']dithiophene-4,4-diyl)bis(propane-1-sulfonate)]), PCP2B4FLi (poly[2,6-cyclopenta[2,1-b:3,4-b']dithiophene-4,4-bis(propane-1-sulfoniclithium)]-alt-[4,4'-(2,2',5,5'-tetrafluoro-1,1'-biphenyl)]) or PCP2FLi (poly[2,6-cyclopenta[2,1-b:3,4-b']dithiophene-4,4-bis(propane-1-sulfonate)]-alt-[4,4'-(2,2'-difluoro-1,1'-biphenyl)]);

[0022] The inorganic phase in the organic-inorganic composite material can be POM1(H3PW) 12 O 40 ), POM2(H3PMo3W9O 40 ), POM3(H3PMo6W6O 40 ), POM4(H3PMo9W3O) 40 ) or POM5 (H3PMo 12 O 40 ).

[0023] The organic phase and the inorganic phase can be mixed in a mass ratio of 1:10 to 10:1, preferably 1:1 to 5, 1:1 to 3 or 1:1.5.

[0024] The material of the counter electrode is selected from any of the following:

[0025] Calcium, magnesium, barium, aluminum, silver, gold, copper, nickel, zinc, titanium, manganese, iron, platinum, and molybdenum.

[0026] Specifically, the functional active layer is a photoactive layer, wherein the electron donor material is selected from any of the following:

[0027] Poly(p-phenylenevinylene) polymers, poly(arylvinylene) polymers, poly(p-phenylene) polymers, poly(aryl) polymers, polythiophene polymers, polyquinoline polymers, porphyrin polymers, phthalocyanine polymers, and copolymers composed of electron-withdrawing conjugated units coupled with electron-donating conjugated units;

[0028] The electron acceptor material is selected from any one of the following:

[0029] Non-fullerenes (such as IT-4F), fullerenes or their derivatives, perylene or their derivatives, naphthalene or their derivatives;

[0030] The electron-withdrawing conjugated unit may be pyrrolopyrrole dione (DPP), benzothiadiazole (BT), benzodithiaphenidene dione (BDD), thiophenolopyrrole dione (TPD), or thiophenothiaphene (TT);

[0031] The electron-donating conjugated unit may be carbazole (Cz), fluorene (F), benzodithiophene (BDT), benzodithiophene (BDT), dithiophene-2-benzene (BDP), or indole (IDT);

[0032] For example, copolymer P141-2F is formed by coupling BDD electron-withdrawing conjugated units and BDT electron-donating conjugated units;

[0033] The mass ratio of the electron donor material to the electron acceptor material can be 1:0.2 to 5, or 1:1.

[0034] The method of this invention is applicable to the preparation of optoelectronic devices such as organic solar cells, perovskite solar cells, quantum dot cells, organic electro-laser displays, and organic field-effect transistors by reverse rapid evaporation, as well as the large-scale production of these devices for use in clothing, car windows, wall surfaces, windows, and electronic products. Attached Figure Description

[0035] Figure 1 The following are schematic diagrams illustrating the general structure of the fast evaporation optoelectronic devices of the present invention: schematic diagram of an organic solar cell; schematic diagram of a perovskite solar cell; schematic diagram of a quantum dot cell; schematic diagram of an organic electro-laser display; and schematic diagram of an organic field-effect transistor.

[0036] Figure 2The current-voltage curves (simulating standard sunlight) of a conventional and fast-deposited organic solar cell with the structure ITO / PEDOT:PSS / P141-2F:IT-4F (1:1, weight ratio) / PFN-Br / Al (100 nm) are shown.

[0037] Figure 3 The current-voltage curves (simulating standard sunlight) of a conventional and fast-deposited organic solar cell with a forward structure of ITO / PEDOT:PSS / P141-2F:IT-4F (1:1, weight ratio) / PDINO / Al (100nm) are shown.

[0038] Figure 4 The structure shown is ITO / ZnO / P141-2F:IT-4F (1:1, weight ratio) / deposited molybdenum trioxide (MoO3) (10nm) / Al (100nm) (different deposition rates: Current-voltage curves of reverse-structure organic solar cells (simulating standard sunlight).

[0039] Figure 5 The structure shown is ITO / ZnO / P141-2F:IT-4F (1:1, weight ratio) / PCP3B:POM5 / Al (100nm) (evaporation rate: Current-voltage curves of reverse-structure organic solar cells (simulating standard sunlight).

[0040] Figure 6 The structure shown is ITO / ZnO / P141-2F:IT-4F (1:1, weight ratio) / PCP3B / Al (100nm) (evaporation rate: Current-voltage curves of reverse-structure organic solar cells (simulating standard sunlight).

[0041] Figure 7 The structure shown is ITO / ZnO / P141-2F:IT-4F (1:1, weight ratio) / POM5 / Al (100nm) (evaporation rate: Current-voltage curves of reverse-structure organic solar cells (simulating standard sunlight).

[0042] Figure 8 The structure shown is ITO / ZnO / P141-2F:IT-4F (1:1, weight ratio) / PCP3B+POM1 / Al (100nm) (evaporation rate: Current-voltage curves of reverse-structure organic solar cells (simulating standard sunlight).

[0043] Figure 9The structure shown is ITO / ZnO / P141-2F:IT-4F (1:1, weight ratio) / PCP3B+POM2 / Al (100nm) (evaporation rate: Current-voltage curves of reverse-structure organic solar cells (simulating standard sunlight).

[0044] Figure 10 The structure shown is ITO / ZnO / P141-2F:IT-4F (1:1, weight ratio) / PCP3B+POM3 / Al (100nm) (evaporation rate: Current-voltage curves of reverse-structure organic solar cells (simulating standard sunlight).

[0045] Figure 11 The structure shown is ITO / ZnO / P141-2F:IT-4F (1:1, weight ratio) / PCP3B+POM4 / Al (100nm) (evaporation rate: Current-voltage curves of reverse-structure organic solar cells (simulating standard sunlight).

[0046] Figure 12 The structure shown is ITO / ZnO / P141-2F:IT-4F (1:1, weight ratio) / PCP3B+POM5 / Al (100nm) (evaporation rate: Current-voltage curves of reverse-structure organic solar cells (simulating standard sunlight).

[0047] Figure 13 The structure shown is ITO / ZnO / P141-2F:BTP-eC9 (1:1, weight ratio) / PCP2B4FH+POM5 / Al (100nm) (evaporation rate: Current-voltage curves of reverse-structure organic solar cells (simulating standard sunlight).

[0048] Figure 14 The structure shown is ITO / ZnO / P141-2F:BTP-eC9 (1:1, weight ratio) / PCP2FLi+POM5 / Al (100nm) (evaporation rate: Current-voltage curves of reverse-structure organic solar cells (simulating standard sunlight).

[0049] Figure 15 The structure shown is ITO / ZnO / P141-2F:BTP-eC9 (1:1, weight ratio) / PCP3B+POM5 / Al (100nm) (evaporation rate: Current-voltage curves of reverse-structure organic solar cells (simulating standard sunlight). Detailed Implementation

[0050] Unless otherwise specified, the experimental methods used in the following comparative examples and embodiments are conventional methods.

[0051] Unless otherwise specified, all materials and reagents used in the following comparative examples and embodiments are commercially available.

[0052] This invention discloses a method for fabricating optoelectronic devices, and the results of the optoelectronic devices involved are as follows: Figure 1 As shown, the structure includes a substrate, a first interface layer 1, a functional material layer 2, a second interface layer 3, and a counter electrode 4 stacked sequentially, and illustrates the structures of various optoelectronic devices: organic solar cell structure; perovskite solar cell structure schematic diagram; quantum dot cell structure schematic diagram; organic electro-laser display structure schematic diagram; organic field-effect transistor structure schematic diagram.

[0053] The polymer active layer material used in the following examples is P141-2F(poly[(2,6-(4,8-bis(5-(2-ethylhexyl-3-fluoro)thiophen-2-yl)-benzo][1,2-b:4,5-b']dithiophene))-alt-(5,5-(1',3'-di-2-thienyl-5',7'-bis(2-ethylhexyl)benzo[1',2'-c:4',5'-c')). ]dithiophene-4,8-dione) and IT-4F(3,9-bis(2-methylene-((3-(1,1-dicyanomethylene)-6,7-difluoro)-indan one))-5,5,11,11-tetrakis(4-hexylphenyl)-dithieno[2,3-d:2',3'-d']-s-indaceno[1,2-b:5,6-b']dithiop (hene) can be prepared according to the method described in the literature [Adv. Mater. 2018, 30, 1707-170.]; BTP-eC9(2,2'-((2Z,2'Z)-((12,13-bis(2-butyloctyl)-3,9-dinonyl-12,13-dihydro-[1,2,5]thiadiazolo[3,4-e]thieno[2”,3”:4',5']thieno[2',3':4,5]pyrrolo[ 3,2-g]thieno[2',3':4,5]thieno[3,2-b]indole-2,10-diyl)bis(methanylylidene))bis(5,6-dichloro-3-oxo-2,3-dihydro-1H-indene-2,1-diylidene))dimalononitrile) can be prepared according to the method described in the literature [Adv. Mater. 2020, 32, 1908205.].

[0054] The PCP3B, PCP2B4FH and PCP2FLi used in the following examples were prepared according to the methods described in the literature ([ACS Appl. Mater. Interfaces 2019, 11, 20205-20213.] and [Adv. Energy Mater. 2019, 9, 1803826.]).

[0055] In the following examples, POM1, POM2, POM3, POM4 and POM5 were prepared according to the method described in the literature (J. Mater. Chem. A2020, 8, 5580–5586.).

[0056] Comparative Example 1:

[0057] Polymers P141-2F and IT-4F were blended and dissolved in chlorobenzene at a weight ratio of 1:1 to prepare a 10 g / L blended active layer solution.

[0058] 1) Forward Reference Device: A commonly used anode modification layer, PEDOT:PSS, was spin-coated onto a transparent ITO glass substrate. The thickness of the PEDOT:PSS layer was measured to be 30 nm using a Dektak XT film thickness gauge. Next, a thin layer of the aforementioned blended active layer solution, with a thickness of 100 nm, was spin-coated onto the PEDOT:PSS layer. Then, a cathode modification layer, PFN-Br, with a thickness of approximately 3 nm, was spin-coated. Then, approximately 10... -4 Under Pa pressure, with A thin layer of 100 nm aluminum was deposited at a high speed to obtain an organic solar cell with a forward structure.

[0059] 2) Rapid Evaporation Device Deposition: A commonly used anode modification layer, PEDOT:PSS, was spin-coated onto the surface of a transparent ITO glass substrate. The thickness of the PEDOT:PSS layer was measured to be 30 nm using a Dektak XT film thickness gauge. Next, a thin layer of the aforementioned blended active layer solution, with a thickness of 100 nm, was spin-coated onto the PEDOT:PSS layer. Then, a cathode modification layer, PFN-Br, with a thickness of approximately 3 nm, was spin-coated. Then, approximately 10... -4 Under Pa pressure, with A 100nm aluminum thin layer was deposited at a high speed to obtain a fast-deposited solar cell device with a forward structure.

[0060] In a glove box filled with N2, an A+A+A class solar simulator AM 1.5G was used at 100mW / cm². 2 The open-circuit voltage, short-circuit current, fill factor, and energy conversion efficiency of the prepared organic solar cells were tested under high intensity. The current density-voltage curves after the tests are shown in Figure 1. Figure 2 It can be seen that when PFN-Br is used as the second interface layer, the power conversion efficiency of the fast evaporation device is significantly reduced compared with the reference device, indicating that when PFN-Br is used as the second interface layer, metal electrodes cannot be rapidly evaporated on it.

[0061] Comparative Example 2:

[0062] Polymers P141-2F and IT-4F were blended and dissolved in chlorobenzene at a weight ratio of 1:1 to prepare a 10 g / L blended active layer solution.

[0063] 1) Forward Reference Device: A commonly used anode modification layer, PEDOT:PSS, was spin-coated onto a transparent ITO glass substrate. The thickness of the PEDOT:PSS layer was measured to be 30 nm using a Dektak XT film thickness meter. Next, a thin layer of the aforementioned blended active layer solution, with a thickness of 100 nm, was spin-coated onto the PEDOT:PSS layer. Then, a cathode modification layer, PDINO, with a thickness of approximately 3 nm, was spin-coated. Then, approximately 10... -4 Under Pa pressure, with A thin layer of 100 nm aluminum was deposited at a high speed to obtain an organic solar cell with a forward structure.

[0064] 2) Rapid Evaporation Device Deposition: A commonly used anode modification layer, PEDOT:PSS, was spin-coated onto the surface of a transparent ITO glass substrate. The thickness of the PEDOT:PSS layer was measured to be 30 nm using a Dektak XT film thickness gauge. Next, a thin layer of the aforementioned blended active layer solution, with a thickness of 100 nm, was spin-coated onto the PEDOT:PSS layer. Then, a cathode modification layer, PDINO, with a thickness of approximately 3 nm, was spin-coated. Then, approximately 10... -4 Under Pa pressure, with A 100nm aluminum thin layer was deposited at a high speed to obtain a fast-deposited solar cell device with a forward structure.

[0065] In a glove box filled with N2, an A+A+A class solar simulator AM 1.5G was used at 100mW / cm². 2 The open-circuit voltage, short-circuit current, fill factor, and energy conversion efficiency of the prepared organic solar cells were tested under high intensity. The current density-voltage curves after the tests are shown in Figure 1. Figure 3 It can be seen that when PDINO is used as the second interface layer, the power conversion efficiency of the fast evaporation device is significantly reduced compared with the reference device, indicating that when PDINO is used as the second interface layer, metal electrodes cannot be rapidly evaporated on it.

[0066] Comparative Example 3:

[0067] Polymers P141-2F and IT-4F were blended and dissolved in chlorobenzene at a weight ratio of 1:1 to prepare a 10 g / L blended active layer solution.

[0068] Reverse devices fabricated by evaporating electrodes at different speeds: A commonly used cathode modification layer, ZnO, was spin-coated onto the surface of a transparent ITO glass substrate. The thickness of the ZnO layer was measured to be 30 nm using a Dektak XT film thickness gauge. Next, a thin layer of the aforementioned blended active layer solution, with a thickness of 100 nm, was spin-coated onto the ZnO layer. Then, at approximately 10... -4 Under a pressure of Pa, a 10 nm thick molybdenum trioxide anode interface layer was successively deposited. (speed) and 100nm thick counter electrode aluminum (at different speeds: This yields an organic solar cell device with a reverse structure.

[0069] In a glove box filled with N2, an A+A+A class solar simulator AM 1.5G was used at 100mW / cm². 2 The open-circuit voltage, short-circuit current, fill factor, and energy conversion efficiency of the fabricated organic solar cells were tested under varying intensity. The current density-voltage curves after the tests are shown below. Figure 4 It can be seen that the power conversion efficiency of the device prepared by rapid aluminum electrode deposition is significantly lower than that of the reference device, indicating that when molybdenum trioxide is used as the second interface layer, metal electrodes cannot be rapidly deposited on it.

[0070] Comparative Example 4:

[0071] Polymers P141-2F and IT-4F were blended and dissolved in chlorobenzene at a weight ratio of 1:1 to prepare a 10 g / L blended active layer solution.

[0072] Reverse devices fabricated by evaporating the counter electrode at different speeds: A commonly used cathode modification layer, ZnO, was spin-coated onto a transparent ITO glass substrate. The thickness of the ZnO layer was measured to be 30 nm using a Dektak XT film thickness meter. Next, a thin layer of the aforementioned blended active layer solution, with a thickness of 100 nm, was spin-coated onto the ZnO layer. Then, a mixed solution of PCP3B and POM5 and a 100 nm thick counter electrode aluminum were spin-coated at 3000 rpm (at a speed of: This yields an organic solar cell device with a reverse structure.

[0073] In a glove box filled with N2, an A+A+A class solar simulator AM 1.5G was used at 100mW / cm². 2 The open-circuit voltage, short-circuit current, fill factor, and energy conversion efficiency of the fabricated organic solar cells were tested under varying intensity. The current density-voltage curves after the tests are shown below. Figure 5It can be seen that the efficiency of the battery device prepared by the mixed solution of PCP3B and POM5 as the anode interface layer is comparable to that prepared by the vapor deposition method of molybdenum trioxide anode interface layer. This indicates that the mixed solution of PCP3B and POM5 can be used as the anode interface layer processed by solution method in the reverse device structure.

[0074] Comparative Example 5:

[0075] Polymers P141-2F and IT-4F were blended and dissolved in chlorobenzene at a weight ratio of 1:1 to prepare a 10 g / L blended active layer solution.

[0076] Reverse devices fabricated by evaporating the counter electrode at different speeds: A commonly used cathode modification layer, ZnO, was spin-coated onto a transparent ITO glass substrate. The thickness of the ZnO layer was measured to be 30 nm using a Dektak XT film thickness meter. Next, a thin layer of the aforementioned blended active layer solution, with a thickness of 100 nm, was spin-coated onto the ZnO layer. Then, a PCP3B solution and a 100 nm thick counter electrode aluminum were spin-coated at 3000 rpm (at a speed of: This yields an organic solar cell device with a reverse structure.

[0077] In a glove box filled with N2, an A+A+A class solar simulator AM 1.5G was used at 100mW / cm². 2 The open-circuit voltage, short-circuit current, fill factor, and energy conversion efficiency of the fabricated organic solar cells were tested under varying intensity. The current density-voltage curves after the tests are shown below. Figure 6 It can be seen that spin-coating PCP3B solution alone as the anodic interface layer is very ineffective.

[0078] Comparative Example 6:

[0079] Polymers P141-2F and IT-4F were blended and dissolved in chlorobenzene at a weight ratio of 1:1 to prepare a 10 g / L blended active layer solution.

[0080] Reverse devices fabricated by evaporating the counter electrode at different speeds: A commonly used cathode modification layer, ZnO, was spin-coated onto the surface of a transparent ITO glass substrate. The thickness of the ZnO layer was measured to be 30 nm using a Dektak XT film thickness meter. Next, a thin layer of the aforementioned blended active layer solution, with a thickness of 100 nm, was spin-coated onto the ZnO layer. Then, a POM5 solution and a 100 nm thick counter electrode aluminum were spin-coated at 3000 rpm (at a speed of: This yields an organic solar cell device with a reverse structure.

[0081] In a glove box filled with N2, an A+A+A class solar simulator AM 1.5G was used at 100mW / cm². 2The open-circuit voltage, short-circuit current, fill factor, and energy conversion efficiency of the fabricated organic solar cells were tested under varying intensity. The current density-voltage curves after the tests are shown below. Figure 7 It can be seen that spin-coating only POM5 solution as the anode interface layer is very ineffective.

[0082] Example 1:

[0083] Polymers P141-2F and IT-4F were blended and dissolved in chlorobenzene at a weight ratio of 1:1 to prepare a 10 g / L blended active layer solution.

[0084] Reverse devices fabricated by evaporating the counter electrode at different speeds: A commonly used cathode modification layer, ZnO, was spin-coated onto a transparent ITO glass substrate. The thickness of the ZnO layer was measured to be 30 nm using a Dektak XT film thickness gauge. Next, a thin layer of the aforementioned blended active layer solution, with a thickness of 100 nm, was spin-coated onto the ZnO layer. Then, a mixed solution of PCP3B + POM1 (a mixture obtained by adding POM1 solid powder to a 2 mg / mL methanol solution of PCP3B, with a mass ratio of PCP3B to POM1 of 2:3) was spin-coated at 3000 rpm for 1 min to obtain an anode modification layer of approximately 20 nm. A 100 nm thick counter electrode aluminum was then deposited (at different speeds). This yields an organic solar cell device with a reverse structure.

[0085] In a glove box filled with N2, an A+A+A class solar simulator AM 1.5G was used at 100mW / cm². 2 The open-circuit voltage, short-circuit current, fill factor, and energy conversion efficiency of the fabricated organic solar cells were tested under varying intensity. The current density-voltage curves after the tests are shown below. Figure 8 It can be seen that spin-coating a mixed solution of PCP3B and POM1 as the anode interface layer improves the device fabrication effect compared to spin-coating only PCP3B or POM5 as the anode interface layer.

[0086] Example 2:

[0087] Polymers P141-2F and IT-4F were blended and dissolved in chlorobenzene at a weight ratio of 1:1 to prepare a 10 g / L blended active layer solution.

[0088] Reverse devices fabricated by evaporating the counter electrode at different speeds: A commonly used cathode modification layer, ZnO, was spin-coated onto the surface of a transparent ITO glass substrate. The thickness of the ZnO layer was measured to be 30 nm using a Dektak XT film thickness gauge. Next, a thin layer of the aforementioned blended active layer solution, with a thickness of 100 nm, was spin-coated onto the ZnO layer. Then, a mixed solution of PCP3B + POM2 (a mixture obtained by adding POM2 solid powder to a 2 mg / mL methanol solution of PCP3B, with a mass ratio of PCP3B to POM2 of 2:3) was spin-coated at 3000 rpm for 1 min to obtain an anode modification layer of approximately 20 nm. A 100 nm thick counter electrode aluminum was then deposited (at different speeds). This yields an organic solar cell device with a reverse structure.

[0089] In a glove box filled with N2, an A+A+A class solar simulator AM 1.5G was used at 100mW / cm². 2 The open-circuit voltage, short-circuit current, fill factor, and energy conversion efficiency of the fabricated organic solar cells were tested under varying intensity. The current density-voltage curves after the tests are shown below. Figure 9 It can be seen that the spin-coated PCP3B+POM2 mixed solution can function normally as the anode interface layer.

[0090] Example 3:

[0091] Polymers P141-2F and IT-4F were blended and dissolved in chlorobenzene at a weight ratio of 1:1 to prepare a 10 g / L blended active layer solution.

[0092] Reverse devices fabricated by evaporating the counter electrode at different speeds: A commonly used cathode modification layer, ZnO, was spin-coated onto the surface of a transparent ITO glass substrate. The thickness of the ZnO layer was measured to be 30 nm using a Dektak XT film thickness gauge. Next, a thin layer of the aforementioned blended active layer solution, with a thickness of 100 nm, was spin-coated onto the ZnO layer. Then, a mixed solution of PCP3B + POM3 (a mixture obtained by adding POM3 solid powder to a 2 mg / mL methanol solution of PCP3B, with a mass ratio of PCP3B to POM3 of 2:3) was spin-coated at 3000 rpm for 1 min to obtain an anode modification layer of approximately 20 nm. A 100 nm thick counter electrode aluminum was then deposited (at different speeds). This yields an organic solar cell device with a reverse structure.

[0093] In a glove box filled with N2, an A+A+A class solar simulator AM 1.5G was used at 100mW / cm². 2 The open-circuit voltage, short-circuit current, fill factor, and energy conversion efficiency of the fabricated organic solar cells were tested under varying intensity. The current density-voltage curves after the tests are shown below. Figure 10 It can be seen that the spin-coated PCP3B+POM3 mixed solution can function normally as the anode interface layer.

[0094] Example 4:

[0095] Polymers P141-2F and IT-4F were blended and dissolved in chlorobenzene at a weight ratio of 1:1 to prepare a 10 g / L blended active layer solution.

[0096] Reverse devices fabricated by evaporating the counter electrode at different speeds: A commonly used cathode modification layer, ZnO, was spin-coated onto the surface of a transparent ITO glass substrate. The thickness of the ZnO layer was measured to be 30 nm using a Dektak XT film thickness gauge. Next, a thin layer of the aforementioned blended active layer solution, with a thickness of 100 nm, was spin-coated onto the ZnO layer. Then, a mixed solution of PCP3B + POM4 (a mixture obtained by adding POM4 solid powder to a 2 mg / mL methanol solution of PCP3B, with a mass ratio of PCP3B to POM4 of 2:3) was spin-coated at 3000 rpm for 1 min to obtain an anode modification layer of approximately 20 nm. A 100 nm thick counter electrode aluminum was then deposited (at different speeds). This yields an organic solar cell device with a reverse structure.

[0097] In a glove box filled with N2, an A+A+A class solar simulator AM 1.5G was used at 100mW / cm². 2 The open-circuit voltage, short-circuit current, fill factor, and energy conversion efficiency of the fabricated organic solar cells were tested under varying intensity. The current density-voltage curves after the tests are shown below. Figure 11 It can be seen that the spin-coated PCP3B+POM4 mixed solution can function normally as the anode interface layer.

[0098] Example 5:

[0099] Polymers P141-2F and IT-4F were blended and dissolved in chlorobenzene at a weight ratio of 1:1 to prepare a 10 g / L blended active layer solution.

[0100] Reverse devices fabricated by evaporating the counter electrode at different speeds: A commonly used cathode modification layer, ZnO, was spin-coated onto the surface of a transparent ITO glass substrate. The thickness of the ZnO layer was measured to be 30 nm using a Dektak XT film thickness gauge. Next, a thin layer of the aforementioned blended active layer solution, with a thickness of 100 nm, was spin-coated onto the ZnO layer. Then, a mixed solution of PCP3B + POM5 (a mixture of POM5 solid powder in a 2 mg / mL methanol solution of PCP3B, with a mass ratio of PCP3B to POM5 of 2:3) was spin-coated at 3000 rpm for 1 min to obtain an anode modification layer of approximately 20 nm. A 100 nm thick counter electrode aluminum was then deposited (at a speed of: This yields an organic solar cell device with a reverse structure.

[0101] In a glove box filled with N2, an A+A+A class solar simulator AM 1.5G was used at 100mW / cm². 2 The open-circuit voltage, short-circuit current, fill factor, and energy conversion efficiency of the fabricated organic solar cells were tested under varying intensity. The current density-voltage curves after the tests are shown below. Figure 12 It can be seen that the spin-coated PCP3B+POM5 mixed solution can function normally as the anode interface layer.

[0102] Example 6:

[0103] Polymer P141-2F and BTP-eC9 were blended and dissolved in chloroform at a weight ratio of 1:1.2 to prepare an 8 g / L blended active layer solution.

[0104] Reverse devices fabricated by evaporating the counter electrode at different speeds: A commonly used cathode modification layer, ZnO, was spin-coated onto the surface of a transparent ITO glass substrate. The thickness of the ZnO layer was measured to be 30 nm using a Dektak XT film thickness gauge. Next, a thin layer of the aforementioned blended active layer solution, with a thickness of 100 nm, was spin-coated onto the ZnO layer. Then, a mixed solution of PCP2B4FH + POM5 (a mixture obtained by adding POM5 solid powder to a 2 mg / mL methanol solution of PCP2B4FH, with a mass ratio of PCP2B4FH to POM5 of 2:3) was spin-coated at 3000 rpm for 1 min to obtain an anode modification layer of approximately 20 nm. A 100 nm thick counter electrode aluminum was then deposited (at different speeds). This yields an organic solar cell device with a reverse structure.

[0105] In a glove box filled with N2, an A+A+A class solar simulator AM 1.5G was used at 100mW / cm². 2 The open-circuit voltage, short-circuit current, fill factor, and energy conversion efficiency of the fabricated organic solar cells were tested under varying intensity. The current density-voltage curves after the tests are shown below. Figure 13 It can be seen that the spin-coated PCP2B4FH+POM5 mixed solution can work normally as the anode interface layer.

[0106] Example 7:

[0107] Polymer P141-2F and BTP-eC9 were blended and dissolved in chloroform at a weight ratio of 1:1.2 to prepare an 8 g / L blended active layer solution.

[0108] Reverse devices fabricated by evaporating the counter electrode at different speeds: A commonly used cathode modification layer, ZnO, was spin-coated onto a transparent ITO glass substrate. The thickness of the ZnO layer was measured to be 30 nm using a Dektak XT film thickness gauge. Next, a thin layer of the aforementioned blended active layer solution, with a thickness of 100 nm, was spin-coated onto the ZnO layer. Then, a mixed solution of PCP2FLi + POM5 (a mixture obtained by adding POM5 solid powder to a 2 mg / mL methanol solution of PCP2FLi, with a mass ratio of PCP2FLi to POM5 of 2:3) was spin-coated at 3000 rpm for 1 min to obtain an anode modification layer of approximately 20 nm. A 100 nm thick counter electrode aluminum was then deposited (at different speeds). This yields an organic solar cell device with a reverse structure.

[0109] In a glove box filled with N2, an A+A+A class solar simulator AM 1.5G was used at 100mW / cm². 2 The open-circuit voltage, short-circuit current, fill factor, and energy conversion efficiency of the fabricated organic solar cells were tested under varying intensity. The current density-voltage curves after the tests are shown below. Figure 14 It can be seen that the spin-coated PCP2FLi+POM5 mixed solution can function normally as the anode interface layer.

[0110] Example 8:

[0111] Polymer P141-2F and BTP-eC9 were blended and dissolved in chloroform at a weight ratio of 1:1.2 to prepare an 8 g / L blended active layer solution.

[0112] Reverse devices fabricated by evaporating the counter electrode at different speeds: A commonly used cathode modification layer, ZnO, was spin-coated onto a transparent ITO glass substrate. The thickness of the ZnO layer was measured to be 30 nm using a Dektak XT film thickness gauge. Next, a thin layer of the aforementioned blended active layer solution, with a thickness of 100 nm, was spin-coated onto the ZnO layer. Then, a mixed solution of PCP3B + POM5 (a mixture obtained by adding POM5 solid powder to a 2 mg / mL methanol solution of PCP3B, with a mass ratio of PCP3B to POM5 of 2:3) was spin-coated at 3000 rpm for 1 min to obtain an anode modification layer of approximately 20 nm. A 100 nm thick counter electrode aluminum was then deposited (at different speeds). This yields an organic solar cell device with a reverse structure.

[0113] In a glove box filled with N2, an A+A+A class solar simulator AM 1.5G was used at 100mW / cm². 2 The open-circuit voltage, short-circuit current, fill factor, and energy conversion efficiency of the fabricated organic solar cells were tested under varying intensity. The current density-voltage curves after the tests are shown below. Figure 15 It can be seen that the spin-coated PCP3B+POM5 mixed solution can function normally as the anode interface layer.

[0114] This invention has been described with reference to specific embodiments and examples. However, the invention is not limited to the embodiments and examples described above. Those skilled in the art will recognize that many substitutions and changes can be made based on the guidance herein without departing from the scope of the invention as defined in the claims.

Claims

1. A method for fabricating an optoelectronic device, comprising the following steps: A solution method was used to sequentially prepare a first interface layer, a functional material layer, and a second interface layer on a substrate, and then a counter electrode was rapidly deposited by vapor evaporation on the second interface layer. The optoelectronic device has a reverse structure; The spin coating of the second interface layer is completed in 0.5 to 1 minute. The conditions for preparing the second interface layer by solution method are as follows: The spin coating speed is 1000~3000 rpm, and the solution concentration is 0.1~10 mg / mL; The deposition rate of the counter electrode is 100~150 Å / s; The second interface layer is made of an organic-inorganic composite material; The organic phase in the organic-inorganic composite material is PCP3B, PCP2B4FH or PCP2FLi; The inorganic phase in the organic-inorganic composite material is POM1, POM2, POM3, POM4 or POM5.

2. The preparation method according to claim 1, characterized in that: The thickness of both the first interface layer and the second interface layer is 0~200 nm, but not zero; The thickness of the functional material layer is 10~1000 nm; The thickness of the counter electrode is 0~3000 nm, but not zero.

3. The preparation method according to claim 1 or 2, characterized in that: The substrate material is selected from any of the following: Silicon, indium tin oxide, fluorine-doped tin oxide, aluminum-doped zinc oxide, gold, silver nanowires and composite electrodes; The material of the first interface layer is selected from any of the following: Lithium fluoride, zinc oxide, tungsten oxide, molybdenum trioxide, vanadium pentoxide, nickel oxide, titanium complexes, PEDOT:PSS, PFN, calcium, magnesium, barium, aluminum, silver, gold, copper, nickel, zinc, titanium, manganese, iron, platinum and molybdenum; The material of the counter electrode is selected from any of the following: Calcium, magnesium, barium, aluminum, silver, gold, copper, nickel, zinc, titanium, manganese, iron, platinum, and molybdenum.

4. The preparation method according to claim 1 or 2, characterized in that: The functional material layer is a photoactive layer, wherein the electron donor material is selected from any of the following: Poly(p-phenylenevinylene) polymers, poly(arylvinylene) polymers, poly(p-phenylene) polymers, poly(aryl) polymers, polythiophene polymers, polyquinoline polymers, porphyrin polymers, phthalocyanine polymers, and copolymers composed of electron-withdrawing conjugated units coupled with electron-donating conjugated units; The electron acceptor material is selected from any one of the following: Fullerenes or their derivatives, perylene or its derivatives, naphthalene or its derivatives.

5. The preparation method according to claim 4, characterized in that: The electron-withdrawing conjugated unit is pyrrolopyrroledione, benzothiadiazole, thienopyrroledione, or thienothiaphene; The electron-donating conjugated unit is carbazole, fluorene, benzodithiophene, benzodifuran, dithiophene, or benzo[a]benzene.

6. The preparation method according to claim 5, characterized in that: The mass ratio of the electron donor material to the electron acceptor material is 1:0.2~5.

7. The preparation method according to claim 1 or 2, characterized in that: The optoelectronic devices are organic solar cells, perovskite solar cells, quantum dot cells, organic electro-laser displays, or organic field-effect transistors.

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