Vibration sensor and microphone

Abstract

The vibration sensor and microphone provided in this specification are composed of a piezoelectric system and a capacitor system. The piezoelectric system includes a vibrating component and a piezoelectric sensing component that collects a first electrical signal generated by the deformation of the vibrating component. The capacitor system uses the vibrating component in the piezoelectric system as a movable capacitor plate in the capacitor system, and sets the fixed substrate and the vibrating component relative to each other to form a capacitive vibration sensor. The deformation of the vibrating component causes the distance between the vibrating component and the fixed substrate to change, and the capacitor sensing component collects the second electrical signal generated by the distance change. The capacitor sensing component is arranged in an area where the first electrical signal in the piezoelectric system is low, thereby rationally utilizing the space of the vibration sensor, increasing the second electrical signal collected by the capacitor system without affecting the output of the first electrical signal of the piezoelectric system, thereby improving the sensitivity of the vibration sensor while increasing space utilization.

Description

Technical Field

[0001] This specification relates to the field of audio acquisition technology, and in particular to a vibration sensor and a microphone. Background Art

[0002] Currently, microphones often use vibration sensors to receive external vibration signals, convert the vibration signals into electrical signals, and output the electrical signals after processing by the back-end circuit, thereby collecting sound signals. Air conduction microphones can collect air vibration signals caused by the user making sounds and convert the air vibration signals into electrical signals. Bone conduction microphones can collect mechanical vibration signals of the bones and skin caused by the user speaking and convert the mechanical vibration signals into electrical signals. In existing piezoelectric vibration sensors, the strain of the piezoelectric layer at the edge connection is large, the piezoelectric effect is obvious, and the output voltage of the effective electrical signal is high, while the strain in the middle area is small, and the output voltage of the effective electrical signal is low. In particular, for piezoelectric vibration sensors connected to a counterweight block, the output voltage of the effective electrical signal is low in the area where the counterweight block is installed. The above phenomenon leads to low microphone sensitivity and a certain amount of space waste.

[0003] Therefore, it is necessary to provide a vibration sensor and a microphone with high sensitivity and high space utilization. Summary of the Invention

[0004] This specification provides a vibration sensor and a microphone with high sensitivity and high space utilization.

[0005] In the first aspect, the present specification provides a vibration sensor comprising a base, a vibration component, a piezoelectric sensing component, a fixed substrate and a capacitive sensing component, wherein the vibration component is connected to the base and generates a target displacement and a target deformation in response to the vibration of the base; the piezoelectric sensing component is connected to the vibration component and converts the target deformation into a first electrical signal; the fixed substrate and the vibration component are arranged relative to each other at a distance; the capacitive sensing component is connected to the fixed substrate and the vibration component and converts the change in distance between the fixed substrate and the vibration component caused by the target displacement into a second electrical signal.

[0006] In some embodiments, the vibration component includes an elastic layer and a counterweight block, the elastic layer is connected to the base and generates the target deformation in response to the excitation of the base vibration; the counterweight block is connected to the elastic layer and generates the target displacement based on the target deformation.

[0007] In some embodiments, the base includes a through cavity, and at least a portion of the vibration component is suspended in the cavity.

[0008] In some embodiments, the elastic layer includes a fixed end and a free end, the fixed end is fixedly connected to the base; the free end is suspended in the cavity, wherein the counterweight is fixedly connected to the free end of the elastic layer and suspended in the cavity.

[0009] In some embodiments, the elastic layer includes a plurality of elastic support beams, one end of which is fixedly connected to the base, and the other end of which is connected to the counterweight block and suspended in the cavity.

[0010] In some embodiments, the elastic layer includes a suspended membrane structure, the peripheral side of the suspended membrane structure is fixedly connected to the base, and the central area of ​​the suspended membrane structure is connected to the counterweight block and suspended in the cavity.

[0011] In some embodiments, the capacitive sensing component is aligned with the counterweight and covers an area corresponding to the counterweight.

[0012] In some embodiments, the capacitive sensing component includes a first capacitive electrode plate and a second capacitive electrode plate, wherein the first capacitive electrode plate is attached to a side of the fixed substrate close to the vibration component; the second capacitive electrode plate is attached to a side of the vibration component close to the fixed substrate and is arranged opposite to the first capacitive electrode plate.

[0013] In some embodiments, the second capacitor electrode sheet is aligned with the counterweight and covers the area where the counterweight is located.

[0014] In some embodiments, the first capacitor electrode sheet includes a limiting protection structure, which is located on the first capacitor electrode sheet and protrudes toward a side close to the vibration component, thereby limiting the target displacement of the vibration component and preventing the second capacitor electrode sheet from contacting the first capacitor electrode sheet.

[0015] In some embodiments, the fixed substrate includes an upper fixed substrate, which is located on the side of the vibrating component away from the counterweight block; the first capacitor electrode sheet includes a first upper capacitor electrode sheet, which is attached to the side of the upper fixed substrate close to the vibrating component; the second capacitor electrode sheet includes a second upper capacitor electrode sheet, which is attached to the side of the vibrating component close to the upper fixed substrate and is arranged opposite to the first upper capacitor electrode sheet.

[0016] In some embodiments, the fixed substrate further includes a lower fixed substrate, located on the side of the vibrating component close to the counterweight block; the first capacitor electrode sheet further includes a first lower capacitor electrode sheet, attached to the side of the lower fixed substrate close to the vibrating component; and the second capacitor electrode sheet further includes a second lower capacitor electrode sheet, attached to the side of the vibrating component close to the lower fixed substrate, and arranged opposite to the first lower capacitor electrode sheet.

[0017] In some embodiments, the piezoelectric sensing component is located in at least one of the following areas: a circumferential area close to and surrounding the counterweight; and an area close to a connection between the elastic layer and the base.

[0018] In some embodiments, the piezoelectric sensing component includes a piezoelectric layer fixedly connected to the base, attached to the surface of the elastic layer, and generates a voltage based on the target deformation.

[0019] In some embodiments, the piezoelectric sensing component also includes a first piezoelectric electrode layer and a second piezoelectric electrode layer, which are respectively distributed on the two side surfaces of the piezoelectric layer and convert the voltage into the first electrical signal. The first piezoelectric electrode layer and the second piezoelectric electrode layer are aligned and located in at least one of the following areas: a circumferential area close to and surrounding the counterweight block; and an area close to the connection between the elastic layer and the base.

[0020] In some embodiments, the first piezoelectric electrode layer includes at least one first piezoelectric electrode sheet, the second piezoelectric electrode layer includes at least one second piezoelectric electrode sheet, and each of the at least one first piezoelectric electrode sheet is aligned with at least one of the at least one second piezoelectric electrode sheet.

[0021] In the second aspect, this specification also provides a microphone, comprising a shell, the vibration sensor described in the first aspect of this specification, and a signal synthesis circuit, wherein the vibration sensor is installed in the shell, and the base is fixedly connected to the shell; the signal synthesis circuit is connected to the piezoelectric sensing component and the capacitive sensing component, and during operation, a third electrical signal is synthesized based on the first electrical signal and the second electrical signal, and the signal strength of the third electrical signal is greater than the signal strength of the first electrical signal and the signal strength of the second electrical signal.

[0022] As can be seen from the above technical solution, the vibration sensor and microphone provided in this specification are composed of a piezoelectric system and a capacitor system. The piezoelectric system includes a vibrating component and a piezoelectric sensing component for collecting electrical signals. The vibrating component may include an elastic layer and a counterweight connected to the elastic layer. The elastic layer deforms under the stimulation of the base vibration. The counterweight displaces under the action of this deformation. The piezoelectric sensing component collects a first electrical signal generated by the deformation of the vibrating component. The capacitor system is directly connected to the piezoelectric system and includes a fixed substrate and a capacitor sensing component for collecting electrical signals. The capacitor system uses the vibrating component in the piezoelectric system as a movable capacitor plate in the capacitor system. On this basis, a fixed substrate is added and arranged opposite to the movable capacitor plate composed of the vibrating component to form a capacitive vibration sensor. The displacement of the counterweight in the vibrating component causes the distance between the vibrating component and the fixed substrate to change. The capacitor sensing component collects a second electrical signal generated by this distance change in the capacitor system. The piezoelectric sensing component is arranged in an area of ​​the piezoelectric system where the output intensity of the first electrical signal is high, such as the area around the counterweight and the area where the elastic layer is connected to the base. The capacitive sensing component is placed in an area of ​​the piezoelectric system where the first electrical signal output strength is low, such as the area corresponding to the location of the counterweight. By distributing the piezoelectric and capacitive sensing components in different areas, the space of the vibration sensor is rationally utilized. The capacitive system is added without affecting the first electrical signal output strength of the piezoelectric system, increasing the second electrical signal collected by the capacitive system, thereby improving the overall electrical signal output strength of the vibration sensor. This improves the sensitivity of the vibration sensor while increasing space utilization and reducing the size of the device.

[0023] Other features of the vibration sensor and microphone provided in this specification are partially outlined in the following description. The following figures and examples will be readily apparent to those skilled in the art based on the description. The inventive aspects of the vibration sensor and microphone provided in this specification can be fully explained through practice or use of the methods, devices, and combinations described in the following detailed examples. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] In order to more clearly illustrate the technical solutions in the embodiments of this specification, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of this specification. For ordinary technicians in this field, other drawings can be obtained based on these drawings without any creative work.

[0025] Figure 1 shows a cross-sectional view of a vibration sensor provided according to an embodiment of this specification;

[0026] Figure 2 Shown Figure 1 Cross-section view in the AA direction;

[0027] Figure 3 shows a cross-sectional view of another vibration sensor provided according to an embodiment of this specification;

[0028] Figure 4 shows a cross-sectional view of another vibration sensor provided according to an embodiment of this specification;

[0029] Figure 5 A cross-sectional view showing another vibration sensor provided according to an embodiment of this specification; and

[0030] Figure 6 A flow chart of a method for manufacturing a vibration sensor provided in accordance with an embodiment of this specification is shown. DETAILED DESCRIPTION

[0031] The following description provides specific application scenarios and requirements for this specification, with the goal of enabling those skilled in the art to make and use the contents of this specification. Various modifications to the disclosed embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be applied to other embodiments and applications without departing from the spirit and scope of this specification. Therefore, this specification is not limited to the embodiments shown, but is intended to be accorded the broadest scope consistent with the claims.

[0032] The terms used herein are for the purpose of describing specific example embodiments only and are not intended to be limiting. For example, as used herein, the singular forms "a," "an," and "the" may also include the plural forms unless the context clearly indicates otherwise. When used in this specification, the terms "comprise," "include," and / or "contain" are intended to refer to the presence of the associated integers, steps, operations, elements, and / or components, but do not preclude the presence of one or more other features, integers, steps, operations, elements, components, and / or groups or the addition of other features, integers, steps, operations, elements, components, and / or groups in the system / method.

[0033] These and other features of this specification, as well as the operation and function of the associated elements of the structure, and the economical assembly and manufacture of the components, can be significantly improved with consideration of the following description. Reference is made to the accompanying drawings, all of which form a part of this specification. However, it should be expressly understood that the drawings are for illustration and description purposes only and are not intended to limit the scope of this specification. It should also be understood that the drawings are not drawn to scale.

[0034] It should be understood that, for the convenience of describing this specification, the terms "center", "upper surface", "lower surface", "up", "lower", "top", "bottom", "inside", "outside", "axial", "radial", "periphery", "outside", etc. indicate positional relationships based on the positional relationships shown in the accompanying drawings, and do not indicate that the devices, components or units referred to must have a specific positional relationship, and should not be understood as limitations on this specification.

[0035] It should be understood that the terms "system," "device," "unit," and / or "module" used herein are a method for distinguishing different components, elements, parts, portions, or assemblies at different levels. However, if other terms can achieve the same purpose, the terms may be replaced by other expressions.

[0036] The flowcharts used in this specification illustrate operations implemented by systems according to some embodiments of the present specification. It should be clearly understood that the operations of the flowcharts may not be implemented in sequence. Rather, the operations may be implemented in reverse order or simultaneously. Furthermore, one or more additional operations may be added to the flowcharts. One or more operations may be removed from the flowcharts.

[0037] The vibration sensor and microphone provided in this specification can be used to collect external vibration signals and convert them into electrical signals. The vibration sensor and microphone can be used not only to collect air vibration signals, but also mechanical vibration signals, such as bone vibration and skin vibration when a person speaks. The vibration sensor and microphone can be used not only as air conduction microphones, but also as bone conduction microphones.

[0038] The vibration sensor and microphone provided in this specification add a capacitor system to the piezoelectric system, effectively utilizing the area with smaller effective electrical signal output in the piezoelectric system as the electrical signal output area of ​​the capacitor system, thereby rationally utilizing the space of the vibration sensor, increasing the electrical signal collected by the capacitor system without affecting the electrical signal output strength of the piezoelectric system, improving the overall electrical signal output strength of the vibration sensor, increasing the sensitivity of the vibration sensor while increasing space utilization and reducing the size of the equipment.

[0039] Figure 1 A cross-sectional view of a vibration sensor 001 provided according to an embodiment of this specification is shown. Figure 2 Shown Figure 1 The cross-section in the AA direction. Figures 1 to 2 As shown, the vibration sensor 001 may include a base 200 , a piezoelectric system 400 , and a capacitive system 600 .

[0040] Base 200 may be a mounting base for vibration sensor 001. Other components of vibration sensor 001, such as piezoelectric system 400 and capacitor system 600, may be directly or indirectly connected to base 200. Such connection may be by any method, such as welding, riveting, clamping, bolting, or other fixed connection methods, or by physical deposition (e.g., physical vapor deposition) or chemical deposition (e.g., chemical vapor deposition). Piezoelectric system 400 may be spaced apart from capacitor system 600.

[0041] The base 200 may be a structure of any shape, for example, a cube, a cuboid, a cylinder, a prism, a truncated cone or any other regular shape, or any irregular shape. In some embodiments, the base 200 may include a through cavity 220. Figures 1 to 2 In the exemplary embodiment shown, the cavity 220 may penetrate the upper surface and the lower surface of the base 200. The cross-section of the cavity 220 may be any shape, for example, a regular shape such as a square, rectangle, circle, polygon, or any irregular shape.

[0042] The piezoelectric system 400 can be connected to the base 200. The connection can be direct or indirect. As previously described, the vibration sensor 001 can receive an external vibration signal and convert the external vibration signal into an electrical signal. For the piezoelectric system 400 of the vibration sensor 001, the external vibration signal can generate pressure on the piezoelectric material in the piezoelectric system 400, causing the piezoelectric material to generate a voltage, thereby converting the external vibration signal into an electrical signal.

[0043] The piezoelectric system 400 can be connected to one side of the base 200. For example, at least part of the structure of the piezoelectric system 400 can be fixed to the upper surface or lower surface of the base 200. The piezoelectric system 400 can also be connected to other parts of the base 200. For example, the piezoelectric system 400 can also be connected to the side wall of the base 200. At least part of the structure of the piezoelectric system 400 can be fixed to the inner wall of the cavity 220 of the base 200. The piezoelectric system 400 can be located in the cavity 220. At least a part of the piezoelectric system 400 is not connected to the base 200. That is, at least a part of the piezoelectric system 400 is suspended in the cavity 220. The "suspended in the cavity 220" can mean suspended inside, below or above the cavity 220 of the base 200, without contacting the base 200. For the convenience of display, as shown in FIG. Figure 1 As shown, for exemplary purposes only, the piezoelectric system 400 may be coupled to the upper surface of the base 200 .

[0044] like Figures 1 to 2As shown, the piezoelectric system 400 may include a vibration component 420 and a piezoelectric sensing component 440. The piezoelectric system 400 may be a stacked structure consisting of the vibration component 420 and the piezoelectric sensing component 440.

[0045] The vibration component 420 can be connected to the base 200 and generate a target displacement and target deformation in response to the vibration of the base 200. The connection can be any connection method, such as a fixed connection method such as welding, riveting, clamping, bolting, etc., or a connection deposited by physical deposition (for example, physical vapor deposition) or chemical deposition (for example, chemical vapor deposition). Specifically, the base 200 can generate vibration based on an external vibration signal, and the vibration component 420 generates the target deformation in response to the vibration of the base 200, and the target deformation further generates the target displacement. It should be noted that the vibration component 420 includes the aforementioned piezoelectric material. The piezoelectric material is subjected to pressure under the target deformation, thereby generating a voltage. The piezoelectric sensing component 440 can be connected to the vibration component 420 and convert the target deformation of the vibration component 420 into a first electrical signal. Specifically, the piezoelectric sensing component 440 can be connected to the vibration component 420 and collect the voltage generated in the piezoelectric material and convert the voltage into the first electrical signal for output. The vibration component 420 and the base 200 may be insulated, for example, the vibration component 420 is connected to the base 200 via the first insulating layer 201. The vibration component 420 may be a portion that is easily deformed by an external force. At least a portion of the vibration component 420 is suspended in the cavity 220. Figures 1 to 2 As shown, the vibration component may include an elastic layer 424. In some embodiments, the vibration component 420 may further include a counterweight 426.

[0046] The elastic layer 424 can be directly or indirectly fixedly connected to the base 200. The connection can be any connection method, such as welding, riveting, clamping, bolting and other fixed connection methods, or a connection deposited by physical deposition (for example, physical vapor deposition) or chemical deposition (for example, chemical vapor deposition). When the base 200 is subjected to an external vibration signal, the elastic layer 424 produces the target deformation based on the vibration excitation of the base 200. The elastic layer 424 is made of a material that is easily deformed under the action of an external force. The elastic layer 424 can be a deformable structure made of a semiconductor material. In some embodiments, the semiconductor material can include silicon dioxide, silicon nitride, gallium nitride, zinc oxide, silicon carbide, etc. The elastic layer 424 can include a fixed end and a free end. The fixed end can be directly or indirectly fixedly connected to the base 200. The free end can be suspended in the cavity 220.

[0047] In some embodiments, the elastic layer 424 may be a support beam structure. Figures 1 to 2As shown, the elastic layer 424 may include a plurality of elastic support beams 424-1. One end of the elastic support beam 424-1 may be fixedly connected to the upper surface, lower surface or inner wall of the cavity 220 of the base 200. The other end of the elastic support beam 424-1 may be connected to the counterweight 426 and suspended in the cavity 220. That is, the two ends of each elastic support beam 424-1 are the fixed end and the free end, respectively. The elastic support beam 424-1 may be a plate-like structure of any shape. For example, its shape may be a rectangular beam, a trapezoidal beam, an L-shaped beam or other shapes, and so on. The elastic layer 424 may include any number of elastic support beams 424-1, and may be distributed circumferentially around the center of the cavity 220. For example, 2, 3, 4, 5, 6, 7, 8, 10. As Figure 2 As shown, the elastic layer 424 may include four elastic support beams 424 - 1 .

[0048] Figure 3 FIG. 1 shows a cross-sectional view of another vibration sensor 001 provided according to an embodiment of the present specification. Figure 3As shown, the elastic layer 424 can also be a suspended membrane structure 424-2. The circumferential side of the suspended membrane structure 424-2 is connected to the base 200 and fixed on the base 200. The central area of ​​the suspended membrane structure 424-2 can be connected to the counterweight 426 and suspended above the cavity 220 of the base 200. That is, the fixed end includes the circumferential side of the suspended membrane structure 424-2, and the free end includes the central area of ​​the suspended membrane structure 424-2. In some embodiments, the shape of the suspended membrane structure 424-2 can be circular, elliptical, triangular, quadrilateral, polygonal, or other arbitrary shapes. In some embodiments, the suspended membrane structure 424-2 can include at least one hole. The at least one hole can be located near the free end of the suspended membrane structure 424-2 and can be distributed circumferentially around the center of the counterweight 426. Providing the at least one hole on the suspension membrane structure 424-2 allows for adjustment of the stiffness of the suspension membrane structure 424-2 at different locations, such that the stiffness of the suspension membrane structure 424-2 near the at least one hole is reduced, while the stiffness of the suspension membrane structure 424-2 away from the at least one hole is relatively increased. When the suspension membrane structure 424-2 and the base 200 undergo relative motion, the suspension membrane structure 424-2 near the at least one hole deforms more significantly, while the suspension membrane structure 424-2 away from the at least one hole deforms less significantly. Placing the piezoelectric sensing component 440 near the at least one hole on the suspension membrane structure 424-2 facilitates the piezoelectric sensing component 440 in collecting vibration signals, thereby effectively improving the sensitivity of the vibration sensor 001. Furthermore, the components of the vibration sensor 001 are relatively simple in structure, making them easier to manufacture or assemble. In some embodiments, the at least one hole can be any shape, such as a circular hole, an elliptical hole, a square hole, or another polygonal hole. In some embodiments, the vibration sensor 001 can also adjust the resonant frequency and stress distribution of the vibration sensor 001 by changing the size, number, spacing, and position of the at least one hole to improve the sensitivity of the vibration sensor 001.

[0049] In some embodiments, the vibration sensor 001 can also adjust the thickness or density of different regions of the suspended membrane structure 424-2 to change the deformation stress at different locations of the suspended membrane structure. In some embodiments, the piezoelectric sensing component 440 can be configured as an annular structure. The thickness of the suspended membrane structure 424-2 located inside the annular structure is greater than the thickness of the region outside the annular structure. In other embodiments, the density of the suspended membrane structure 424-2 located inside the annular structure is greater than the density of the region outside the annular structure. The vibration sensor 001 can adjust the density or thickness of different locations of the suspended membrane structure 424-2 so that the mass of the suspended membrane located inside the annular structure is greater than the mass of the suspended membrane located outside the annular structure. When the suspended membrane structure 424-2 and the base 200 undergo relative motion, the suspended membrane structure 424-2 near the annular structure of the piezoelectric sensing component 440 experiences greater deformation and generates greater deformation stress, thereby increasing the output electrical signal of the vibration sensor 001.

[0050] Figure 4 FIG. 1 shows a cross-sectional view of another vibration sensor 001 provided according to an embodiment of the present specification. Figure 4 As shown, the elastic layer 424 can also be a cantilever beam structure 424-3. The elastic layer 424 can include a cantilever beam 424-3. One end of the cantilever beam 424-3 can be fixedly connected to the upper surface, lower surface of the base 200 or the inner wall of the cavity 220. The other end of the cantilever beam 424-3 can be suspended in the cavity 220. The other end of the cantilever beam 424-3 can be connected to the counterweight block 426 or not. That is, the two ends of the cantilever beam 424-3 are the fixed end and the free end, respectively. The cantilever beam 424-3 can be a plate-like structure of any shape. For example, its shape can be a rectangular beam, a trapezoidal beam, an L-shaped beam or other shapes, etc.

[0051] Elastic layer 424 can also have other structural forms capable of deforming in response to external vibration signals, and this specification does not limit this. For ease of illustration, the following description will assume that elastic layer 424 is a support beam structure. Those skilled in the art will understand that other structures of elastic layer 424 are also within the scope of protection of this specification.

[0052] In some embodiments, the vibration component 420 may further include a counterweight 426. The counterweight 426 may be directly connected to the elastic layer 424 or indirectly connected to the elastic layer 424. When the base 200 is subjected to an external vibration signal, the elastic layer 424 generates the target deformation based on the vibration excitation of the base 200, and the counterweight 426 generates the target displacement based on the target deformation. The counterweight 426 may be fixedly connected to the free end of the elastic layer 424. In some embodiments, the counterweight 426 may protrude to one side relative to the elastic layer 424 and be suspended in the cavity 220. For example, the counterweight 426 may protrude upward relative to the elastic layer 424 and be suspended in the cavity 220. The counterweight 426 may also protrude downward relative to the elastic layer 424 and be suspended in the cavity 220.

[0053] The counterweight 426 can make the elastic layer 424 more easily deformed under the action of external force, thereby increasing the output voltage of the first electrical signal of the piezoelectric sensing component 440. The counterweight 426 can be located at the center of the cavity 220. The planar shape of the counterweight 426 can be circular, triangular, quadrilateral, polygonal, etc. In some embodiments, the voltage of the first electrical signal output by the piezoelectric sensing component 440 can be increased by changing the size, shape, and position of the counterweight 426. The setting of the counterweight 426 can change the natural frequency and vibration amplitude of the vibration component 420 during vibration. In some embodiments, the first electrical signal can be increased by changing the size, shape, and position of the counterweight 426.

[0054] The piezoelectric sensing component 440 may include a piezoelectric layer 441. The piezoelectric layer 441 refers to a structure that can generate a voltage at its two end surfaces when subjected to an external force. The piezoelectric layer 441 can be directly or indirectly fixedly connected to the base 200. The connection can be any connection method, such as a fixed connection method such as welding, riveting, clamping, bolting, or a connection deposited by physical deposition (e.g., physical vapor deposition) or chemical deposition (e.g., chemical vapor deposition). In some embodiments, the piezoelectric layer 441 can undergo the target deformation when subjected to a vibration signal, and generate a voltage based on the target deformation.

[0055] The piezoelectric layer 441 can be directly or indirectly attached to the surface of the elastic layer 424. In some embodiments, the elastic layer 424 can be directly connected to the base 200, and the piezoelectric layer 441 is indirectly connected to the base 200 through the elastic layer 424. Taking the vibration component 420 being located on the upper surface of the base 200 as an example, in some embodiments, the piezoelectric layer 441 can be located on the side of the elastic layer 424 away from the base 200, and the laminated structure composed of the vibration component 420 and the piezoelectric sensing component 440 includes, from top to bottom, a piezoelectric layer 441, an elastic layer 424, and a counterweight 426. In some embodiments, the piezoelectric layer 441 can be located on the side of the elastic layer 424 close to the base 200, and the laminated structure composed of the vibration component 420 and the piezoelectric sensing component 440 includes, from top to bottom, a counterweight 426, an elastic layer 424, and a piezoelectric layer 441. Figures 1 to 2 In the exemplary embodiment shown, the elastic layer 424 is directly connected to the base 200, and the piezoelectric layer 441 is connected to the elastic layer 424 and located on the side of the elastic layer 424 away from the base 200, i.e., above the elastic layer 424. The counterweight 426 is connected to the elastic layer 424 and located below the elastic layer 424. When the base 200 is subjected to an external vibration signal, the elastic layer 424 generates the target deformation based on the vibration signal. The piezoelectric layer 441 can generate a voltage (potential difference) due to the stress caused by the target deformation of the elastic layer 424, based on the piezoelectric effect.

[0056] In some embodiments, the piezoelectric layer 441 may be a piezoelectric polymer film obtained by a semiconductor deposition process (e.g., magnetron sputtering, MOCVD). In some embodiments, the material of the piezoelectric layer 441 may include piezoelectric crystal materials and piezoelectric ceramic materials. Piezoelectric crystal refers to a piezoelectric single crystal. In some embodiments, the piezoelectric crystal material may include crystal, sphalerite, borate, tourmaline, zincite, GaAs, barium titanate and its derivative structure crystals, KH2PO4, NaKC4H4O6·4H2O (Rohi salt), etc., or any combination thereof. Piezoelectric ceramic material refers to a piezoelectric polycrystal formed by a random collection of fine grains obtained by solid-phase reaction and sintering between powders of different materials. In some embodiments, the piezoelectric ceramic material may include barium titanate (BT), lead zirconate titanate (PZT), lead barium lithium niobate (PBLN), modified lead titanate (PT), aluminum nitride (AIN), zinc oxide (ZnO), or any combination thereof. In some embodiments, the material of the piezoelectric layer 441 may also be a piezoelectric polymer material, such as polyvinylidene fluoride (PVDF).

[0057] The piezoelectric sensing component 440 may also include a first piezoelectric electrode layer 442 and a second piezoelectric electrode layer 444. The first piezoelectric electrode layer 442 and the second piezoelectric electrode layer 444 are respectively distributed on the two side surfaces of the piezoelectric layer 441. The piezoelectric layer 441 may be located between the first piezoelectric electrode layer 442 and the second piezoelectric electrode layer 444. Under the action of an external vibration signal, the piezoelectric layer 441 may deform along with the target deformation of the elastic layer 424, and generate a voltage under the action of the deformation stress. The first piezoelectric electrode layer 442 and the second piezoelectric electrode layer 444 may collect the voltage to generate the first electrical signal. The positions of the first piezoelectric electrode layer 442 and the second piezoelectric electrode layer 444 are aligned.

[0058] As previously described, the piezoelectric layer 441 is connected to the elastic layer 424, and the piezoelectric layer 441 is distributed on one side of the elastic layer 424. In some embodiments, the first piezoelectric electrode layer 442 can be distributed between the piezoelectric layer 441 and the elastic layer 424, and the second piezoelectric electrode layer 444 can be distributed on the side of the piezoelectric layer 441 away from the elastic layer 424. In other embodiments, the second piezoelectric electrode layer 444 can be distributed between the piezoelectric layer 441 and the elastic layer 424, and the first piezoelectric electrode layer 442 can be distributed on the side of the piezoelectric layer 441 away from the elastic layer 424.

[0059] In some embodiments, the first piezoelectric electrode layer 442 and the second piezoelectric electrode layer 444 are made of a conductive material. Exemplary conductive materials may include metals, alloys, metal oxides, graphene, or any combination thereof. In some embodiments, the metal and alloy materials may include nickel, iron, lead, platinum, titanium, copper, molybdenum, zinc, or any combination thereof. In some embodiments, the alloy material may include copper-zinc alloy, copper-tin alloy, copper-nickel-silicon alloy, copper-chromium alloy, copper-silver alloy, or any combination thereof. In some embodiments, the metal oxide material may include RuO2, MnO2, PbO2, NiO, or any combination thereof.

[0060] When relative motion occurs between the vibration component 420 and the base 200, the degree of deformation at different positions of the vibration component 420 is different. That is, the deformation stress generated on the piezoelectric layer 441 at different positions of the vibration component 420 is different. In order to improve the sensitivity of the vibration sensor 001, in some embodiments, the piezoelectric sensing component 440 can be set only at the position where the vibration component 420 has a larger degree of deformation, thereby improving the sensitivity of the vibration sensor 001. For the convenience of description, we define the position where the vibration component 420 has a larger degree of deformation as the first area, and the position where the vibration component 420 has a smaller degree of deformation as the second area. The voltage of the first electrical signal in the first area is higher than that in the second area. In some embodiments, the piezoelectric sensing component 440 can be set only in the first area. It should be noted that the first area and the second area refer to the areas corresponding to the cavity 220, and do not include the area where the vibration component 420 is connected to the base 200.

[0061] To improve the sensitivity of the vibration sensor 001, the vibration component 420 may include a counterweight 426. Because the counterweight 426 is rigidly connected to the elastic layer 424, the deformation of the piezoelectric layer 441 corresponding to the location of the counterweight 426 is small, and the voltage of the effective electrical signal is small. In contrast, near the counterweight 426 or near the connection between the elastic layer 424 and the base 200, the deformation of the piezoelectric layer 441 is large, and the voltage of the effective electrical signal is also large. Therefore, the piezoelectric sensing component 440 may not be located where the counterweight 426 is located. The first area may include at least one of a circumferential area near and surrounding the counterweight 426 and an area near the connection between the elastic layer 424 and the base 200. The second area may include the area corresponding to the location of the counterweight 426. The second area may substantially cover the surface area of ​​the counterweight 426. That is, the area of ​​the second area may be equal to, slightly smaller than, or slightly larger than the surface area of ​​the counterweight 426. The piezoelectric sensing component 440 may be located in the first area. That is, the piezoelectric sensing component 440 can be disposed in at least one of a circumferential region near and surrounding the counterweight 426 and a region near the connection between the elastic layer 424 and the base 200. Specifically, the first piezoelectric electrode layer 442 and the second piezoelectric electrode layer 444 can be disposed in at least one of a circumferential region near and surrounding the counterweight 426 and a region near the connection between the elastic layer 424 and the base 200.

[0062] The first piezoelectric electrode layer 442 may include at least one first piezoelectric electrode sheet. The second piezoelectric electrode layer 444 may include at least one second piezoelectric electrode sheet. Each of the at least one first piezoelectric electrode sheet is aligned with at least one position of the at least one second piezoelectric electrode sheet. In some embodiments, the position of each first piezoelectric electrode sheet corresponds to a second piezoelectric electrode sheet. In some embodiments, the position of each first piezoelectric electrode sheet corresponds to multiple second piezoelectric electrode sheets, such as 2, 3, 4, etc. The multiple second piezoelectric electrode sheets form a series output unit with the first piezoelectric electrode sheet as the common end to increase the output voltage and improve sensitivity. The multiple second piezoelectric electrode sheets can also form a parallel output unit with the first piezoelectric electrode sheet to increase the output charge and improve sensitivity. Taking the example of the elastic layer 424 including four elastic support beams 424-1, the combination of the first piezoelectric electrode sheet and the second piezoelectric electrode sheet in the piezoelectric sensing component 440 can be different between different elastic support beams. The piezoelectric sensing component 440 may include only series output units, only parallel output units, or both series output units and parallel output units.

[0063] In some embodiments, the first piezoelectric electrode layer 442 and the second piezoelectric electrode layer 444 may also be spaced apart and arranged on the same side of the piezoelectric layer 441. For example, the first piezoelectric electrode layer 442 and the second piezoelectric electrode layer 444 may be spaced apart and arranged on the side of the piezoelectric layer 441 close to the vibration component 420, or may be spaced apart and arranged on the side away from the vibration component 420. When the first piezoelectric electrode layer 442 and the second piezoelectric electrode layer 444 are spaced apart and arranged on the same side of the piezoelectric layer 441, the first piezoelectric electrode sheet may be bent into a first comb-tooth structure, and the second piezoelectric electrode sheet may be bent into a second comb-tooth structure ( Figures 1 to 4(not shown in the figure). The first comb-tooth structure may include a plurality of comb-tooth structures. There is a first spacing between adjacent comb-tooth structures of the first comb-tooth structure. The first spacing may be the same or different. The second comb-tooth structure may include a plurality of comb-tooth structures. There is a second spacing between adjacent comb-tooth structures of the second comb-tooth structure. The second spacing may be the same or different. The first comb-tooth structure may cooperate with the second comb-tooth structure to form a piezoelectric sensing component 440. Further, the comb-tooth structure of the first comb-tooth structure may extend into the second spacing of the second comb-tooth structure. The comb-tooth structure of the second comb-tooth structure may extend into the first spacing of the first comb-tooth structure, thereby cooperating with each other to form the piezoelectric sensing component 440. The first comb-tooth structure and the second comb-tooth structure cooperate with each other so that the first piezoelectric electrode layer 442 and the second piezoelectric electrode layer 444 are arranged compactly but do not intersect. In some embodiments, the first comb-tooth structure and the second comb-tooth structure extend along the length direction of the cantilever arm 424-3 (for example, from the fixed end to the free end).

[0064] In some embodiments, the piezoelectric sensing component 440 may further include a first connection terminal 446 connected to the first piezoelectric electrode layer 442 or the second piezoelectric electrode layer 444 to output the first electrical signal to an external processing circuit.

[0065] The capacitor system 600 can be directly or indirectly fixedly connected to the base 200 and arranged in a spaced relationship with the piezoelectric system 400. The capacitor system 600 can include a fixed substrate 620 and a capacitive sensing component 640. The capacitor system 600 can utilize the vibrating component 420 in the piezoelectric system 400 as a movable capacitor plate in the capacitor system 600. Based on the target displacement of the vibrating component 420, the capacitor system 600 can change the distance between the vibrating component 420 and the fixed substrate 620, thereby generating a voltage, and converting the voltage into the second electrical signal.

[0066] The fixed substrate 620 can be directly or indirectly connected to the base 200. Taking the connection between the piezoelectric system 400 and the upper surface of the base 200 as an example, the fixed substrate 620 can be located above the piezoelectric system 400 (e.g. Figures 1 to 4 As shown), that is, the side of the piezoelectric system 400 away from the base 200, it can also be located below the piezoelectric system 400, that is, the side of the piezoelectric system 400 close to the base 200, or it can be located above and below the piezoelectric system 400 at the same time (as shown). Figure 5The connection may be any connection method, such as a fixed connection method such as welding, riveting, clamping, bolting, or a connection by physical deposition (e.g., physical vapor deposition) or chemical deposition (e.g., chemical vapor deposition). The fixed substrate 620 and the base 200 may be insulated, for example, the fixed substrate 620 is connected to the base 200 via the second insulating layer 202. The fixed substrate 620 may be a structure of any shape, such as a regular shape such as a cube, a cuboid, a cylinder, a prism, or a truncated cone, or any irregular shape.

[0067] The fixed substrate 620 can be arranged relative to the vibrating component 420 at a distance to form a set of parallel plate capacitors. The vibrating component 420 can serve as a movable capacitor plate in the parallel plate capacitor. When the vibrating component 420 generates relative motion relative to the base 200 and the fixed substrate 620 based on the vibration excitation of the base 200, and the target deformation and the target displacement occur, the distance between the vibrating component 420 and the fixed substrate 620 changes, thereby causing a change in the capacitance value in the parallel plate capacitor. Under a given bias voltage, the change in the capacitance value can be further converted into a change in the electrical signal, thereby achieving force-to-electricity conversion and generating the second electrical signal.

[0068] The distance between the fixed substrate 620 and the vibrating component 420 can be pre-set, or can be changed or adjusted. The distance between the fixed substrate 620 and the vibrating component 420 can be set or changed according to the parameters of the vibrating component 420.

[0069] The capacitive sensing component 640 can be connected to the fixed substrate 620 and the vibration component 420, and generate the second electrical signal based on the change in the distance between the fixed substrate 620 and the vibration component 420 caused by the target displacement. As mentioned above, the vibration component 420 in the first area has a larger deformation degree, and the vibration component 420 in the second area has a smaller deformation degree. The piezoelectric sensing component 440 can be set only in the first area. In order to improve space utilization and reduce the spatial volume of the vibration sensor 001 as much as possible, the capacitive sensing component 640 can be located in the second area of ​​the vibration component 420. That is, the position of the capacitive sensing component 640 can be aligned with the position of the counterweight 426 and cover the area corresponding to the counterweight 426. That is, the capacitive sensing component 640 can be set directly above or directly below the counterweight 426.

[0070] The vibration sensor 001 can distribute the piezoelectric sensing component 440 and the capacitive sensing component 640 in different areas within the space based on the distribution characteristics of the electrical signal. The piezoelectric sensing component 440 can be distributed in the area where the first electrical signal is stronger, and the capacitive sensing component 640 can be distributed in the area where the first electrical signal is weaker and the second electrical signal is stronger, so as to improve the space utilization in the vibration sensor 001, reduce space waste, and at the same time improve the sensitivity of the vibration sensor 001.

[0071] by Figures 1 to 2 As an example, the second area may include an area within a preset range near the center of the cavity 220. That is, the second area may include the area corresponding to the location of the counterweight 426. The second area may substantially cover the surface area of ​​the counterweight 426. The first area may include at least one of a circumferential area near and surrounding the second area and an area near the connection between the elastic layer 424 and the base 200. The piezoelectric sensing component 440 may be provided in the first area. The capacitive sensing component 640 may be provided in the second area. The piezoelectric sensing components 440 may be distributed circumferentially around the capacitive sensing component 640. In addition, during the movement of the vibration component 420 relative to the base 200, the position located in the center area of ​​the vibration component 420 experiences a greater displacement, and the position where the counterweight 426 is located also experiences a greater displacement. Therefore, the second area may include the center area of ​​the vibration component 420. Distributing the capacitive sensing components 640 in the center area of ​​the vibration component 420 or the area corresponding to the location of the counterweight 426 can obtain a greater distance variation, thereby increasing the output voltage of the second electrical signal.

[0072] The capacitive sensing component 640 may include a first capacitor electrode sheet 642 and a second capacitor electrode sheet 644. The first capacitor electrode sheet 642 and the second capacitor electrode sheet 644 may be arranged relative to each other. The first capacitor electrode sheet 642 may be attached to a side of the fixed substrate 620 close to the vibration component 420. The first capacitor electrode sheet 642 may be insulated and connected to the fixed substrate 620. That is, the first capacitor electrode sheet 642 may be connected to the fixed substrate 620 via the third insulating layer 203. The second capacitor electrode sheet 644 may be attached to a side of the vibration component 420 close to the fixed substrate 620. The position of the second capacitor electrode sheet 644 may be aligned with the position of the counterweight 426 and cover the area corresponding to the counterweight 426. The piezoelectric sensing component 440 is distributed circumferentially around the second capacitor electrode sheet 644. The first capacitor electrode sheet 642 and the second capacitor electrode sheet 644 are patterned and etched to make their patterns completely consistent so as to completely correspond.

[0073] In some embodiments, the first capacitor electrode sheet 642 may include a limiting protection structure 6421, which is located on the first capacitor electrode sheet 642 and protrudes toward the side close to the vibrating component 420. The limiting protection structure 6421 can be located at any position on the first capacitor electrode sheet 642. The limiting protection structure 6421 can play a limiting protection role. When subjected to a large impact, the limiting protection structure 6421 can limit the amplitude of the vibrating component 420 to prevent severe vibration and damage to the device (such as the elastic layer 424). In some embodiments, the limiting protection structure 6421 can be located on the first capacitor electrode sheet 642 at a position opposite to the second capacitor electrode sheet 644 to prevent the first capacitor electrode sheet 642 and the second capacitor electrode sheet 644 from contacting and causing a short circuit, and to prevent the first capacitor electrode sheet 642 and the second capacitor electrode sheet 644 from adsorbing and bonding. In some embodiments, the limiting protection structure can be a rigid structure (for example, a limiting block) or a structure with a certain degree of elasticity (for example, an elastic cushion, a buffer cantilever beam, or a buffer support arm and a limiting block are provided at the same time). The material of the position limiting protection structure 6421 can be a polymer material such as polyimide and parylene.

[0074] In some embodiments, the first capacitor electrode plate 642 and the second capacitor electrode plate 644 are made of a conductive material. Exemplary conductive materials may include metals, alloy materials, metal oxide materials, graphene, etc., or any combination thereof. In some embodiments, the metal and alloy materials may include nickel, iron, lead, platinum, titanium, copper, molybdenum, zinc, or any combination thereof. In some embodiments, the alloy material may include copper-zinc alloy, copper-tin alloy, copper-nickel-silicon alloy, copper-chromium alloy, copper-silver alloy, etc., or any combination thereof. In some embodiments, the metal oxide material may include RuO2, MnO2, PbO2, NiO, etc., or any combination thereof.

[0075] In some embodiments, the capacitive sensing component 640 may further include a second connection terminal 646 connected to the second capacitive electrode plate 644 to output the second electrical signal to an external processing circuit.

[0076] As previously mentioned, in some embodiments, the fixed substrate 620 can be located both above and below the piezoelectric system 400 . Figure 5 FIG1 shows a cross-sectional view of a vibration sensor 001 provided according to an embodiment of the present specification. Figure 5 As shown, the fixed substrate 620 can be located above and below the piezoelectric system 400 at the same time. Figure 5As shown, the fixed substrate 620 may include an upper fixed substrate 621 and a lower fixed substrate 622. The first capacitor electrode plate 642 may include a first upper capacitor electrode plate 6423 and a first lower capacitor electrode plate 6424. The second capacitor electrode plate 644 may include a second upper capacitor electrode plate 6443 and a second lower capacitor electrode plate 6444.

[0077] The upper fixed substrate 621 and the lower fixed substrate 622 can be fixedly connected to the base 200 and located on either side of the vibration component 420. For example, the upper fixed substrate 621 can be located on the side of the vibration component 420 away from the counterweight 426, that is, the upper fixed substrate 621 is located above the vibration component 420. The lower fixed substrate 622 can be located on the side of the vibration component 420 close to the counterweight 426, and the lower fixed substrate 622 is located below the vibration component 420.

[0078] The first upper capacitor electrode 6423 can be attached to a side of the upper fixed substrate 621 close to the vibration component 420. The second upper capacitor electrode 6443 can be attached to a side of the vibration component 420 close to the upper fixed substrate 621 and disposed opposite to the first upper capacitor electrode 6423.

[0079] The first lower capacitor electrode piece 6424 can be attached to a side of the lower fixed substrate 622 close to the vibration component 420. The second lower capacitor electrode piece 6444 can be attached to a side of the vibration component 420 close to the lower fixed substrate 622 and disposed opposite to the first lower capacitor electrode piece 6424.

[0080] When the vibration component 420 generates the target displacement based on the vibration of the base 200, the distance of the vibration component 420 relative to the upper fixed substrate 621 and the lower fixed substrate 622 changes simultaneously. When the distance of the vibration component 420 relative to the upper fixed substrate 621 decreases, the distance relative to the lower fixed substrate 622 increases. When the distance of the vibration component 420 relative to the upper fixed substrate 621 increases, the distance relative to the lower fixed substrate 622 decreases. The first upper capacitor electrode sheet 6423 and the second upper capacitor electrode sheet 6443 collect the upper second electrical signal generated by the change in the distance of the vibration component 420 relative to the upper fixed substrate 621. The first lower capacitor electrode sheet 6424 and the second lower capacitor electrode sheet 6444 collect the lower second electrical signal generated by the change in the distance of the vibration component 420 relative to the lower fixed substrate 622. The second electrical signal includes the upper second electrical signal and the lower second electrical signal.

[0081] The first upper capacitor electrode plate 6423 may include a position limiting protection structure 6421, which is located on the first upper capacitor electrode plate 6423 and protrudes toward the side closer to the vibration component 420. The first lower capacitor electrode plate 6424 may also include a position limiting protection structure 6421, which is located on the first lower capacitor electrode plate 6424 and protrudes toward the side closer to the vibration component 420.

[0082] The second connection terminal 646 outputs the upper second electrical signal and the lower second electrical signal to an external processing circuit for synthesis through a differential algorithm to increase the second electrical signal output by the capacitor system 600 , thereby further improving the sensitivity of the vibration sensor 001 .

[0083] This specification also provides a microphone, which may include a shell and a vibration sensor 001 provided in this specification. The vibration sensor 001 may be installed in the shell. The shell may be fixedly connected to the base 200. The shell and the base 200 may be an integral structure or a split structure, and are connected together by a fixed connection method, such as welding, riveting, bolting, bonding, etc. When the shell is vibrated by an external force (for example, the vibration of the face of a person when speaking drives the shell to vibrate), the vibration of the shell drives the base 200 to vibrate. Due to the different properties of the vibration component 420 and the shell structure (or base 200), the vibration component 420 and the shell structure (or base 200) cannot maintain completely consistent movement, thereby generating relative motion, and then causing the vibration component 420 to generate the target deformation and the target displacement. The piezoelectric sensing component 440 and the capacitive sensing component 640 convert the target deformation and the target displacement into the first electrical signal and the second electrical signal.

[0084] In some embodiments, the microphone may further include a signal synthesis circuit. The signal synthesis circuit is connected to the piezoelectric sensing component 440 and the capacitive sensing component 640, and during operation, synthesizes the first electrical signal and the second electrical signal into a third electrical signal. The signal strength of the third electrical signal is greater than the signal strength of the first electrical signal and the signal strength of the second electrical signal. In some embodiments, the signal synthesis circuit may further synthesize the upper second electrical signal and the lower second electrical signal into the second electrical signal. The strength of the second electrical signal is greater than that of the upper second electrical signal and the lower second electrical signal.

[0085] For illustrative purposes only, the microphone described in this specification can be applied to various electronic products, such as headphones (e.g., bone conduction headphones or air conduction headphones, wireless headphones, wired headphones), smart glasses, smart wearable devices, smart helmets, smart watches, and other devices with voice collection capabilities.

[0086] In summary, the vibration sensor 001 and microphone 002 provided in this specification are composed of a piezoelectric system 400 and a capacitor system 600. The vibration component 420 in the piezoelectric system 400 is deformed under the action of external vibration excitation and moves up and down relative to the base 200. The piezoelectric sensing component 440 collects the first electrical signal generated based on the target deformation. The capacitor system 600 uses the vibration component 420 as the movable capacitor plate in the capacitor system 600. When the vibration component 420 moves up and down relative to the base 200, the distance between the vibration component 420 and the fixed substrate 620 changes accordingly, and the capacitance also changes accordingly. The capacitor system 600 respectively sets a relative first capacitor electrode sheet 642 and a second capacitor electrode sheet 644 on the vibration component 420 and the fixed substrate 620 to collect the second electrical signal in the capacitor system 600 and obtain the voltage output of the second electrical signal. The vibration sensor 001 outputs the first electrical signal and the second electrical signal to the external processing circuit. The external processing circuit performs signal processing on the first electrical signal and the second electrical signal so that the first electrical signal and the second electrical signal are superimposed, thereby increasing the overall voltage of the output electrical signal of vibration sensor 001 and improving the sensitivity of vibration sensor 001. Furthermore, by distributing piezoelectric sensing components 440 at locations where the output voltage of the first electrical signal is relatively high and distributing capacitive sensing components 640 at locations where the output voltage of the second electrical signal is relatively high, the internal space of vibration sensor 001 is rationally utilized, avoiding space waste while improving the sensitivity of vibration sensor 001.

[0087] The connection relationship between the base 200, the piezoelectric system 400 and the capacitor system 600 in the vibration sensor 001 can be achieved through mechanical fixing connection methods such as welding, riveting, clamping, bolts, etc., or through deposition connection methods such as physical deposition (for example, physical vapor deposition) or chemical deposition (for example, chemical vapor deposition).

[0088] Figure 6 FIG1 shows a flow chart of a method P100 for manufacturing a vibration sensor 001 according to an embodiment of the present specification. In the method P100, the vibration sensor 001 is manufactured by deposition. Figures 1 to 2 Take the vibration sensor 001 shown as an example, Figure 6 As shown, the method P100 may include:

[0089] S120 : manufacturing the base 200 , the vibration component 420 , the piezoelectric sensor component 440 and the second capacitor electrode sheet 644 .

[0090] Specifically, step S120 may involve etching the entire structure of the base 200 and the vibration component 420 formed of a Si substrate. Step S120 may include sequentially depositing and etching the second capacitor electrode 644, the first piezoelectric electrode layer 442, the piezoelectric layer 224, and the second piezoelectric electrode layer 444 on the upper surface of the SOI silicon wafer, and performing corresponding patterned etching after each deposition to obtain a designed electrode and lead pattern; etching the elastic layer 424 to the first insulating layer 201; depositing a SiO2 insulating layer material on the surface of the elastic layer 424, performing patterned etching, and polishing to obtain the second insulating layer 202.

[0091] In some embodiments, the vibration component 420 may further include a seed layer ( Figures 1 to 2 The seed layer is not shown in the figure and is used to provide a good growth surface structure for other layers. The seed layer can be located on the surface of the piezoelectric layer 441. In some embodiments, the material of the seed layer can be the same as that of the piezoelectric layer 441. For example, when the material of the piezoelectric layer 441 is AlN, the material of the seed layer is also AlN. In other embodiments, the material of the seed layer can also be different from that of the piezoelectric layer 122.

[0092] S140 : manufacturing a fixed substrate 620 and a first capacitor electrode sheet 642 .

[0093] Specifically, step S140 may include depositing a SiO2 layer (third insulating layer 203) and a polysilicon layer in sequence on a Si substrate; patterning and etching the polysilicon layer to obtain a first capacitor electrode plate 642; depositing and etching a polymer material on the surface of the polysilicon to obtain a limiting protection structure 6421; and combining the fixed substrate 620 with the third insulating layer 203, such as wafer bonding.

[0094] S160: Making the first connecting terminal 446 and the second connecting terminal 646:

[0095] Specifically, step S160 may include performing patterned through-hole etching on the fixed substrate 620 to obtain installation positions of the first connection terminal 446 and the second connection terminal 646 ; and manufacturing the first connection terminal 446 and the second connection terminal 646 .

[0096] S180: manufacturing the cavity 220.

[0097] Specifically, step S180 may include patterning and etching the Si substrate of the base 200 to obtain the cavity 220 and the counterweight 426 ; etching the SiO 2 in the first insulating layer 201 to release the elastic layer 424 to obtain a free end of the elastic layer 424 .

[0098] The foregoing description of this specification describes specific embodiments. Other embodiments are within the scope of the appended claims. In some cases, the actions or steps recited in the claims can be performed in an order different from that described in the embodiments and still achieve the desired results. Furthermore, the processes depicted in the accompanying drawings do not necessarily require the particular order or sequential order shown to achieve the desired results. In certain embodiments, multitasking and parallel processing are also possible or may be advantageous.

[0099] In summary, after reading this detailed disclosure, those skilled in the art will appreciate that the foregoing detailed disclosure may be presented by way of example only and may not be limiting. Although not expressly stated herein, those skilled in the art will understand that this specification encompasses various reasonable changes, improvements, and modifications to the embodiments. Such changes, improvements, and modifications are intended to be suggested by this specification and are within the spirit and scope of the exemplary embodiments of this specification.

[0100] Furthermore, certain terms in this specification have been used to describe embodiments of this specification. For example, “one embodiment,” “an embodiment,” and / or “some embodiments” mean that a particular feature, structure, or characteristic described in connection with that embodiment may be included in at least one embodiment of this specification. Therefore, it is emphasized and should be understood that two or more references to “an embodiment,” “one embodiment,” or “an alternative embodiment” in various parts of this specification do not necessarily refer to the same embodiment. Furthermore, particular features, structures, or characteristics may be appropriately combined in one or more embodiments of this specification.

[0101] It should be understood that in the foregoing descriptions of the embodiments of this specification, to facilitate understanding of a feature and to simplify this specification, various features are combined in a single embodiment, figure, or description thereof. However, this does not necessarily mean that these features are combined. When reading this specification, those skilled in the art may extract some of the features and understand them as separate embodiments. In other words, the embodiments of this specification can also be understood as the integration of multiple sub-embodiments. This also applies when each sub-embodiment contains fewer than all the features of a single previously disclosed embodiment.

[0102] Each patent, patent application, patent application publication, and other materials, such as articles, books, specifications, publications, documents, articles, etc., cited herein is hereby incorporated by reference in its entirety for all purposes, except for any prosecution document history related thereto, any equivalent that may be inconsistent or conflicting with this document, or any equivalent prosecution document history that may have a limiting effect on the broadest scope of the claims now or hereafter associated with this document. For example, if there is any inconsistency or conflict between the description, definition, and / or use of terms associated with any incorporated material and the terminology, description, definition, and / or use associated with this document, the terminology in this document shall control.

[0103] Finally, it should be understood that the embodiments of the application disclosed herein are illustrative of the principles of the embodiments of this specification. Other modified embodiments are also within the scope of this specification. Therefore, the embodiments disclosed in this specification are merely examples and not limitations. Those skilled in the art can adopt alternative configurations based on the embodiments in this specification to implement the application in this specification. Therefore, the embodiments of this specification are not limited to the embodiments precisely described in the application.

Claims

1. A vibration sensor, characterized in that: include: base; a vibrating component connected to the base and generating a target displacement and a target deformation in response to vibration of the base, the vibrating component comprising at least a first region and a second region, wherein when the vibrating component vibrates, the target deformation of the first region is greater than the target deformation of the second region, and the target displacement of the first region is less than the target displacement of the second region; a piezoelectric sensing component connected to the first region of the vibration component and converting the target deformation into a first electrical signal, wherein the piezoelectric sensing component is not distributed in the second region; a fixed substrate, spaced apart and arranged opposite to the vibration component; and A capacitive sensing component is connected to the fixed substrate and the vibrating component in the second area, and converts the distance change between the fixed substrate and the vibrating component caused by the target displacement into a second electrical signal. The capacitive sensing component is not distributed in the first area.

2. The vibration sensor according to claim 1, wherein The vibration component comprises: an elastic layer connected to the base and generating the target deformation in response to excitation of vibration of the base; and A counterweight block is connected to the elastic layer and generates the target displacement based on the target deformation.

3. The vibration sensor according to claim 2, wherein The base includes a penetrating cavity, and at least a portion of the vibration component is suspended in the cavity.

4. The vibration sensor according to claim 3, wherein The elastic layer comprises: a fixed end, fixedly connected to the base; and The free end is suspended in the cavity, Wherein, the counterweight block is fixedly connected to the free end of the elastic layer and suspended in the cavity.

5. The vibration sensor according to claim 4, wherein The elastic layer comprises: A plurality of elastic support beams have one end fixedly connected to the base and the other end connected to the counterweight block and suspended in the cavity.

6. The vibration sensor according to claim 4, wherein The elastic layer comprises: A suspended membrane structure, wherein the peripheral side of the suspended membrane structure is fixedly connected to the base, and the central area of ​​the suspended membrane structure is connected to the counterweight block and suspended in the cavity.

7. The vibration sensor according to claim 2, wherein The position of the capacitive sensing component is aligned with the position of the counterweight block and covers the area corresponding to the counterweight block.

8. The vibration sensor according to claim 7, wherein The capacitive sensing component includes: A first capacitor electrode sheet is attached to a side of the fixed substrate close to the vibration component; and The second capacitor electrode sheet is attached to a side of the vibration component close to the fixed substrate and is arranged opposite to the first capacitor electrode sheet.

9. The vibration sensor according to claim 8, wherein The position of the second capacitor electrode sheet is aligned with the position of the counterweight block and covers the area where the counterweight block is located.

10. The vibration sensor according to claim 8, wherein The first capacitor electrode sheet includes: The limiting protection structure is located on the first capacitor electrode sheet and protrudes toward a side close to the vibration component, thereby limiting the target displacement of the vibration component and preventing the second capacitor electrode sheet from contacting the first capacitor electrode sheet.

11. The vibration sensor according to claim 8, wherein The fixed base plate includes an upper fixed base plate located on a side of the vibrating component away from the counterweight; The first capacitor electrode sheet includes a first upper capacitor electrode sheet attached to a side of the upper fixed substrate close to the vibration component; and The second capacitor electrode plate includes a second upper capacitor electrode plate, which is attached to a side of the vibration component close to the upper fixed substrate and is arranged opposite to the first upper capacitor electrode plate.

12. The vibration sensor according to claim 8, wherein The fixed base plate further comprises a lower fixed base plate, which is located on a side of the vibrating component close to the counterweight block; The first capacitor electrode sheet further includes a first lower capacitor electrode sheet attached to a side of the lower fixed substrate close to the vibration component; and The second capacitor electrode sheet further includes a second lower capacitor electrode sheet attached to a side of the vibration component close to the lower fixed substrate and arranged opposite to the first lower capacitor electrode sheet.

13. The vibration sensor according to claim 7, wherein The piezoelectric sensing component is located in at least one of the following areas: a circumferential region adjacent to and surrounding the counterweight; and an area near the connection between the elastic layer and the base.

14. The vibration sensor according to claim 13, wherein The piezoelectric sensing component comprises: The piezoelectric layer is fixedly connected to the base, attached to the surface of the elastic layer, and generates a voltage based on the target deformation.

15. The vibration sensor according to claim 14, wherein The piezoelectric sensing component also includes: The first piezoelectric electrode layer and the second piezoelectric electrode layer are respectively distributed on both sides of the piezoelectric layer and convert the voltage into the first electrical signal. The first piezoelectric electrode layer and the second piezoelectric electrode layer are aligned and located in at least one of the following areas: a circumferential region adjacent to and surrounding the counterweight; and an area near the connection between the elastic layer and the base.

16. The vibration sensor according to claim 15, wherein The first piezoelectric electrode layer includes at least one first piezoelectric electrode sheet, and the second piezoelectric electrode layer includes at least one second piezoelectric electrode sheet. Each of the at least one first piezoelectric electrode sheet is aligned with at least one of the at least one second piezoelectric electrode sheet.

17. A microphone, characterized in that: include: case; The vibration sensor according to any one of claims 1 to 16, mounted in the housing, wherein the base is fixedly connected to the housing; as well as A signal synthesis circuit is connected to the piezoelectric sensing component and the capacitive sensing component, and during operation, synthesizes the first electrical signal and the second electrical signal into a third electrical signal, wherein the signal strength of the third electrical signal is greater than the signal strength of the first electrical signal and the signal strength of the second electrical signal.

Images