A low-temperature ion implantation method and device

Abstract

The present invention provides a low-temperature ion implantation method and apparatus. The apparatus includes a pre-cooling stage, a pre-heating stage connected to the pre-cooling stage, and a transfer section. The transfer section is configured to transfer the silicon wafer to the pre-cooling stage before performing the low-temperature ion implantation process on the silicon wafer; the pre-cooling stage is configured to pre-cool the silicon wafer; the transfer section is further configured to transfer the silicon wafer into the process chamber for low-temperature ion implantation treatment, and after completing the low-temperature ion implantation treatment, transfer the silicon wafer to the pre-heating stage; the pre-heating stage is configured to pre-heat the silicon wafer; the pre-cooling stage and the pre-heating stage are interconnected through a semiconductor temperature control device, the hot end of the semiconductor temperature control device is connected to the pre-heating stage, and the cold end of the semiconductor temperature control device is connected to the pre-cooling stage. The apparatus is used to improve the ion implantation effect of ultra-shallow junctions of devices at low temperatures.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor integrated circuit manufacturing, and particularly to a low-temperature ion implantation method and apparatus. Background Art

[0002] With the rapid development of complementary metal oxide semiconductor (CMOS) technology according to Moore's law, the requirements for ultra-shallow junctions in CMOS devices are getting higher and higher, and low-temperature implantation technology has thus developed. During traditional low-temperature ion implantation, since the temperature of the process chamber is relatively low, the silicon wafer needs to be pre-cooled before entering the process chamber to improve the process effect and production capacity and avoid the efficiency reduction caused by directly cooling in the process chamber. At the same time, after the process is completed, if the silicon wafer is directly removed from the process chamber and the equipment, due to its low temperature, when it contacts the external air, water vapor will condense, causing a series of process problems. Although traditional low-temperature ion implanters will cool the silicon wafer by injecting liquid nitrogen or liquid helium into the bottom of the stage that holds the silicon wafer through a cooling pipe and perform the low-temperature ion implantation process. However, due to the low temperature requirements of the low-temperature implantation technology and the rotation of the silicon wafer stage according to the process requirements, which will drive the cooling pipe to twist, it is easy to cause the cooling pipe to crack and leakage problems.

[0003] Therefore, it is necessary to develop a new type of low-temperature ion implantation device to improve the above problems existing in the prior art. Summary of the Invention

[0004] The present invention provides a low-temperature ion implantation device for improving the ion implantation effect of ultra-shallow junctions in devices at low temperatures.

[0005] In a first aspect, the present invention provides a low-temperature ion implantation device, which includes: a pre-cooling stage, a pre-heating stage connected to the pre-cooling stage, and a transfer unit. The transfer unit is configured to transfer the silicon wafer to the pre-cooling stage before performing the low-temperature ion implantation process on the silicon wafer; the pre-cooling stage is configured to pre-cool the silicon wafer; the transfer unit is further configured to transfer the silicon wafer into the process chamber for low-temperature ion implantation processing, and after the low-temperature ion implantation processing is completed, transfer the silicon wafer to the pre-heating stage; the pre-heating stage is configured to pre-heat the silicon wafer; the pre-cooling stage and the pre-heating stage are interconnected through a semiconductor temperature control device, the hot end of the semiconductor temperature control device is connected to the pre-heating stage, and the cold end of the semiconductor temperature control device is connected to the pre-cooling stage.

[0006] The beneficial effects of the low-temperature ion implantation device provided by the embodiments of the present invention are as follows: A preheating table and a precooling table are provided in the device. The precooling table and the preheating table are interconnected through a semiconductor temperature control device. The hot end of the semiconductor temperature control device is connected to the preheating table, and the cold end of the semiconductor temperature control device is connected to the precooling table. Therefore, there is no need to design a complex heat dissipation structure to dissipate the heat of the device. In the present invention, both its heating and cooling ends are utilized, and the overall effect is better and more energy-efficient. Moreover, it can avoid the condensation problem of water vapor caused by the silicon wafer contacting the external air when the temperature of the silicon wafer is relatively low, thereby further avoiding a series of process problems and improving the ion implantation effect of the ultra-shallow junction at low temperature of the device.

[0007] In a possible implementation, the device further includes a transfer chamber, which is connected to the process chamber. The preheating table and the precooling table are both arranged in the transfer chamber of the device, and the transfer chamber is in a vacuum environment. While the transfer part transfers the current silicon wafer from the precooling table to the process chamber of the device for low-temperature ion implantation treatment, it is also used to transfer another silicon wafer to the precooling table and transfer the silicon wafer that has completed the low-temperature ion implantation treatment process to the preheating table. It can be seen that in this solution, when the silicon wafer is transferred, when the current silicon wafer is transferred from the precooling table to the process chamber for processing, the next silicon wafer starts to be placed on the precooling table for processing. At the same time, the previous silicon wafer that has completed the process is preheated at the preheating end. In this way, the efficiency and productivity of the entire process are optimal, and the vacuum environment is more energy-efficient.

[0008] In another possible implementation, the device further includes a precooling chamber and a transfer chamber. The precooling chamber is connected to the transfer chamber, and the transfer chamber is connected to the process chamber. The precooling table is arranged in the precooling chamber of the device, and the preheating table is arranged in the transfer chamber of the device. When the transfer part transfers the current Nth silicon wafer from the precooling table to the process chamber for low-temperature ion implantation treatment, it is also used to transfer the (N + 1)th silicon wafer to the precooling table and transfer the (N - 1)th silicon wafer that has completed the low-temperature ion implantation treatment process to the preheating table, where N is a positive integer greater than 1. In this solution, the precooling table is separately placed in the precooling chamber. Compared with the case where the preheating table and the precooling table are both arranged in the transfer chamber of the device, the efficiency can be further saved. Similarly, the silicon wafer processing process forms a chain, and the efficiency and productivity of the entire process are optimal and more energy-efficient.

[0009] In a possible implementation, the device further includes a precooling chamber, which is connected to the process chamber. The precooling table is arranged in the precooling chamber of the device, and the preheating table is arranged in the process chamber of the device. The process chamber is in a vacuum.

[0010] In a possible implementation, the device further includes a transfer chamber and a pre-cooling chamber. The pre-cooling chamber is connected to the transfer chamber, and the transfer chamber is connected to the process chamber. The pre-cooling stage is disposed in the pre-cooling chamber of the device, a pre-heating stage is disposed in the process chamber of the device, and another pre-heating stage is disposed in the transfer chamber of the device. The temperature of the pre-heating stage in the process chamber is lower than that of the pre-heating stage in the transfer chamber. When the transfer unit transfers the current Mth silicon wafer from the pre-cooling stage to the process chamber for low-temperature ion implantation treatment, it simultaneously transfers the (M + 1)th silicon wafer to the pre-cooling stage; and transfers the (M - 1)th silicon wafer that has completed the low-temperature ion implantation treatment process to the first pre-heating stage in the process chamber, and simultaneously transfers the (M - 2)th silicon wafer to another pre-heating stage in the silicon wafer transfer chamber for pre-heating, where M is a positive integer greater than 2. In this solution, the silicon wafer processing process forms a chain, and the efficiency and productivity of the entire process are optimal, and it is more energy-saving.

[0011] In a possible implementation, a refrigerating end of a semiconductor refrigerator is disposed inside the silicon wafer carrier stage of the process chamber and is connected to a heating end of an external heating stage. In this solution, a refrigerating end of a semiconductor refrigerator is disposed inside the silicon wafer carrier stage of the process chamber and is connected to a heating end of an external heating stage, which is used to quickly cool the silicon wafer carrier stage through the refrigerating end after equipment maintenance.

[0012] In a possible implementation, the silicon wafer carrier stage includes a silicon wafer carrier stage surface, a high thermal conductivity material layer below the silicon wafer carrier stage surface, a refrigerating liquid channel below the high thermal conductivity material layer, and a refrigerating end of a semiconductor refrigerator arranged at intervals with the channel.

[0013] In a second aspect, an embodiment of the present invention further provides a low-temperature ion implantation method, and the method includes:

[0014] Providing a silicon wafer; before performing a low-temperature ion implantation process on the silicon wafer, pre-cooling the silicon wafer by using a pre-cooling stage; transferring the silicon wafer to a process chamber for low-temperature ion implantation treatment, and after completing the low-temperature ion implantation treatment, pre-heating the silicon wafer by using a pre-heating stage; wherein, the pre-cooling stage and the pre-heating stage are interconnected through a semiconductor temperature control device, a hot end of the semiconductor temperature control device is connected to the pre-heating stage, and a cold end of the semiconductor temperature control device is connected to the pre-cooling stage. This method introduces a low-temperature ion implantation process, which can ensure the ion implantation effect of ultra-shallow junctions at low temperatures and improve product performance.

[0015] In a possible implementation manner, when the above method transfers the current Nth silicon wafer from the pre-cooling stage to the process chamber for low-temperature ion implantation treatment, it simultaneously transfers the (N + 1)th silicon wafer to the pre-cooling stage, and transfers the (N - 1)th silicon wafer that has completed the low-temperature ion implantation treatment process to the pre-heating stage. In this way, the silicon wafer processing process forms a chain, and the efficiency and productivity of the entire process are optimal, and it is more energy-saving. Brief Description of the Drawings

[0016] Figure 1 Schematic diagram of a low-temperature ion implantation device provided by an embodiment of the present invention;

[0017] Figure 2 Schematic cross-sectional structure diagram of a carrier provided by an embodiment of the present invention;

[0018] Figure 3A Schematic assembly structure diagram of a pre-cooling table and a pre-heating table placed in a transfer chamber provided by an embodiment of the present invention;

[0019] Figure 3B Schematic assembly structure diagram of a pre-cooling table placed in a pre-cooling chamber provided by an embodiment of the present invention;

[0020] Figure 3C Schematic assembly structure diagram of a pre-cooling table placed in a pre-cooling chamber and a pre-heating table placed in a process chamber provided by an embodiment of the present invention;

[0021] Figure 3D Schematic assembly structure diagram of a pre-cooling table placed in a pre-cooling chamber, one pre-heating table placed in a process chamber, and another pre-heating table placed in a transfer chamber provided by an embodiment of the present invention;

[0022] Figure 4 Schematic flow chart of a low-temperature ion implantation method provided by an embodiment of the present invention. Detailed Embodiments

[0023] The following describes the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Among them, in the description of the embodiments of the present invention, the terms used in the following embodiments are only for the purpose of describing specific embodiments and are not intended to limit the present invention. As used in the specification and the appended claims of the present invention, the singular forms "a", "the", "above-mentioned", "this" and "such" are also intended to include, for example, the expression form of "one or more", unless there is a clear indication to the contrary in the context. It should also be understood that in the following embodiments of the present invention, "at least one" and "one or more" mean one or more than two (including two).

[0024] References to "one embodiment" or "some embodiments" etc. described in this specification mean that specific features, structures, or characteristics described in connection with that embodiment are included in one or more embodiments of the present invention. Thus, statements such as "in one embodiment", "in some embodiments", "in other some embodiments", "in still other embodiments", etc. that appear in different places in this specification do not necessarily all refer to the same embodiment, but mean "one or more but not all embodiments", unless otherwise specifically emphasized. The terms "comprising", "including", "having" and their variants all mean "including but not limited to", unless otherwise specifically emphasized. The term "connection" includes direct connection and indirect connection, unless otherwise stated. "First" and "second" are only used for descriptive purposes and should not be construed as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features.

[0025] In the embodiments of the present invention, words such as "exemplarily" or "for example" are used to represent examples, illustrations, or explanations. Any embodiment or design described as "exemplarily" or "for example" in the embodiments of the present invention should not be construed as being more preferred or having more advantages than other embodiments or designs. Rather, the use of words such as "exemplarily" or "for example" is intended to present relevant concepts in a specific manner.

[0026] As Figure 1 shown, the present invention provides a low-temperature ion implantation device, and the device includes a process chamber 10. A carrier table 203 is provided in the process chamber 10. The process chamber 10 is used to complete the low-temperature ion treatment of the silicon wafer. The device further includes a pre-cooling table 201 and a pre-heating table 202 connected to the pre-cooling table 201.

[0027] The pre-cooling table 201 is used to pre-cool the silicon wafer. The pre-heating table 202 is used to pre-heat the silicon wafer.

[0028] Wherein, the pre-cooling table 201 and the pre-heating table 202 are interconnected through a semiconductor temperature control device, the hot end of the semiconductor temperature control device is connected to the pre-heating table 202, and the cold end of the semiconductor temperature control device is connected to the pre-cooling table 201.

[0029] In some embodiments, the semiconductor temperature control device may be a thermoelectric cooler (TEC), which can achieve heating and cooling by changing the direction of the current, and has the advantages of no need for refrigerant, no noise, small size, short response time, precise temperature control, etc. Exemplarily, the heating end of the TEC is connected to the side where the pre-heating table 202 is located to realize the decrease of the temperature of the TEC itself; the cooling end of the semiconductor cooler is connected to the pre-cooling table 201 to quickly cool down the silicon wafer carried by the pre-cooling table 201.

[0030] In Figure 1 , the pre-cooling stage 201 and the pre-heating stage 202 may be disposed in the transfer chamber 20 (see Figure 3A ). It should be understood that the pre-cooling stage 201 and the pre-heating stage 202 may also be partially disposed in the transfer chamber 20 (see Figure 3B ), or entirely disposed in the process chamber 10. The specific setting scheme can be referred to below.

[0031] In addition, the device further includes a transfer unit 300. The transfer unit 300 is used to transfer wafers. Specifically, before the low-temperature ion implantation process of the wafer, the wafer is transferred to the pre-cooling stage 201. After the pre-cooling stage 201 completes the pre-cooling of the wafer, the wafer is transferred into the process chamber 10 for low-temperature ion implantation treatment, and after the low-temperature ion implantation treatment is completed, the wafer is transferred to the pre-heating stage 202. After the pre-heating stage 202 pre-heats the wafer, the wafer is transferred out of the low-temperature ion implantation device.

[0032] In the above device, a cooling end of a semiconductor refrigerator is disposed inside the carrier stage 203 of the process chamber 10 and is connected to a heating end of an external heating stage. See Figure 2 . The carrier stage 203 includes a wafer carrier stage support material layer 301, a cooling channel 302 located above the wafer carrier stage support material layer 301, and a semiconductor refrigerator cooling end 303 arranged at intervals with the cooling channel 302. The carrier stage 203 further includes a high thermal conductivity material layer 304 and a wafer carrier stage surface 305 above the high thermal conductivity material layer 304. The cooling channel 302 can accommodate a low-temperature coolant 306. The semiconductor refrigerator cooling end 303 is connected to the heating end of the external heating stage and is used to quickly cool the wafer carrier stage through the cooling end after equipment maintenance.

[0033] The device further includes a transfer chamber 20 and a wafer inlet / outlet port 30. Below, in combination with Figures 3A to 3D , several possible assembly positions of the pre-cooling stage 201 and the pre-heating stage 202 in the device are exemplarily listed as follows:

[0034] Exemplarily, see Figure 3A, the preheating stage 202 and the precooling stage 201 are jointly arranged in the transfer chamber 20 of the device, and the transfer chamber 20 is in a vacuum environment. The process chamber 10 is connected to the transfer chamber 20. When the transfer unit 300 transfers the current Nth silicon wafer from the precooling stage 201 to the process chamber 10 for low-temperature ion implantation treatment, it is also used for: simultaneously transferring the (N + 1)th silicon wafer to the precooling stage 201, and transferring the (N - 1)th silicon wafer that has completed the low-temperature ion implantation treatment process to the preheating stage 202, where N is a positive integer greater than 1. In this assembly structure, the preheating stage 202 and the precooling stage 201 are arranged in the silicon wafer transfer chamber 20, and the vacuum degree of the silicon wafer transfer chamber 20 is set within 100 Torr. On the one hand, it can prevent the efficiency reduction caused by thermal radiation; on the other hand, it helps to optimize the efficiency and productivity of the entire process.

[0035] Exemplarily, refer to Figure 3B , the precooling stage 201 is arranged in the precooling chamber 40 of the device, the preheating stage 202 is arranged in the transfer chamber 20 of the device, the precooling chamber 40 is connected to the transfer chamber 20, and the transfer chamber 20 is connected to the process chamber 10. When the transfer unit 300 transfers the current Nth silicon wafer from the precooling stage 201 to the process chamber 10 for low-temperature ion implantation treatment, it is also used for: simultaneously transferring the (N + 1)th silicon wafer to the precooling stage 201, and transferring the (N - 1)th silicon wafer that has completed the low-temperature ion implantation treatment process to the preheating stage 202. In this assembly structure, a separate precooling chamber 40 is provided, and the preheating stage 202 is arranged in the silicon wafer transfer chamber 20. On the one hand, it is beneficial for temperature control and energy consumption saving; on the other hand, it helps to optimize the efficiency and productivity of the entire process.

[0036] Exemplarily, refer to Figure 3C , the precooling stage 201 is arranged in the precooling chamber 40 of the device, the preheating stage 202 is arranged in the process chamber 10 of the device, the process chamber 10 is in a vacuum environment, the precooling chamber 40 is connected to the transfer chamber 20, and the transfer chamber 20 is connected to the process chamber 10. When the transfer unit 300 transfers the current Nth silicon wafer from the precooling stage 201 to the process chamber 10 for low-temperature ion implantation treatment, it is also used for: simultaneously transferring the (N + 1)th silicon wafer to the precooling stage 201, and transferring the (N - 1)th silicon wafer that has completed the low-temperature ion implantation treatment process to the preheating stage 202. In this assembly structure, a separate precooling chamber 40 is provided, and the preheating stage 202 is arranged in the high-vacuum process chamber 10; on the one hand, it is beneficial for temperature control and energy consumption saving; on the other hand, it helps to optimize the efficiency and productivity of the entire process.

[0037] Exemplarily, refer to Figure 3D, the pre-cooling table 201 is disposed in the pre-cooling chamber 40 of the device, a pre-heating table 202 is disposed in the process chamber 10 of the device, and another pre-heating table 202 is disposed in the transfer chamber 20 of the device. Among them, the temperature of the pre-heating table 202 in the process chamber 10 is lower than that of the pre-heating table 202 in the transfer chamber 20. The pre-cooling chamber 40 is connected to the transfer chamber 20, and the transfer chamber 20 is connected to the process chamber 10. When the transfer unit 300 transfers the current Mth silicon wafer from the pre-cooling table 201 to the process chamber 10 for low-temperature ion implantation treatment, it simultaneously transfers the (M + 1)th silicon wafer to the pre-cooling table 201; and transfers the (M - 1)th silicon wafer that has completed the low-temperature ion implantation treatment process to a pre-heating table 202 in the process chamber, and at the same time transfers the (M - 2)th silicon wafer to another pre-heating table 202 in the silicon wafer transfer chamber 20 for pre-heating, where M is a positive integer greater than 2. In this assembly structure, a separate pre-cooling chamber 40 is provided, and the two pre-heating tables 202 are respectively disposed in the high-vacuum process chamber 10 and the transfer chamber 20. The temperature of the pre-heating table in the process chamber 10 is lower than that of the pre-heating table in the transfer chamber 20, avoiding mutual influence in the process chamber; in addition, it also helps to optimize the efficiency and productivity of the entire process.

[0038] It should be understood that the above Figures 3A to 3D illustrates several possible assembly positions of the pre-cooling table 201 and the pre-heating table 202 in the device, but is not limited to the above examples. The process chamber 10 can also be connected to the pre-cooling chamber 40. The positions of the pre-cooling table 201 and the pre-heating table 202 in the device are not limited to the above embodiments, and the connection manners of the process chamber 10, the transfer chamber 20, and the pre-cooling chamber 40 are also not limited to the above embodiments, and can be set according to actual needs.

[0039] In addition, an embodiment of the present invention also provides a low-temperature ion implantation method, which can be performed by Figure 1 the device shown. As Figure 4 shown, an embodiment of the present invention provides a low-temperature ion implantation method, which includes:

[0040] S401, providing a silicon wafer.

[0041] S402, before performing the low-temperature ion implantation process on the silicon wafer, pre-cooling the silicon wafer by using a pre-cooling table.

[0042] S403, transferring the silicon wafer to the process chamber for low-temperature ion implantation treatment, and after completing the low-temperature ion implantation treatment, pre-heating the silicon wafer by using a pre-heating table.

[0043] Optionally, the method further includes S404, after the silicon wafer is pre-heated, transferring the silicon wafer out of the low-temperature ion implantation device.

[0044] Wherein, the pre-cooling table and the pre-heating table are interconnected through a semiconductor temperature control device, the hot end of the semiconductor temperature control device is connected to the pre-heating table, and the cold end of the semiconductor temperature control device is connected to the pre-cooling table.

[0045] The method further includes: when transferring the current Nth silicon wafer from the pre-cooling table to the process chamber for low-temperature ion implantation treatment, simultaneously transferring the (N + 1)th silicon wafer to the pre-cooling table, and transferring the (N - 1)th silicon wafer that has completed the low-temperature ion implantation treatment process to the pre-heating table.

[0046] In summary, the device is provided with a pre-heating table and a pre-cooling table. The pre-cooling table and the pre-heating table are interconnected through a semiconductor temperature control device. The hot end of the semiconductor temperature control device is connected to the pre-heating table, and the cold end of the semiconductor temperature control device is connected to the pre-cooling table. Therefore, there is no need to design a complex heat dissipation structure to dissipate the heat of the device. The present invention utilizes both its heating and cooling ends, with a better overall effect, more energy-efficient, and can avoid the condensation problem of water vapor caused by the silicon wafer contacting the external air when the temperature of the silicon wafer is relatively low, thereby further avoiding a series of process problems and improving the ion implantation effect of the ultra-shallow junction at low temperature of the device.

[0047] The above is only the specific implementation manner of the present invention, but the protection scope of the present invention is not limited thereto. Any person skilled in the art within the technical scope disclosed by the present invention can easily think of changes or substitutions, which should all be covered by the protection scope of the present invention. Therefore, the protection scope of the present invention should be subject to the protection scope of the claims.

[0048] In short, the above is only the preferred embodiment of the technical solution of the present invention, and is not used to limit the protection scope of the present invention. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principle of the present invention shall be included in the protection scope of the present invention.

Claims

1. A low-temperature ion implantation device, characterized in that, The device includes a process chamber, a pre-cooling stage, a pre-heating stage connected to the pre-cooling stage, and a transfer unit: The process chamber includes a wafer carrier. The wafer carrier includes a wafer carrier surface, a high thermal conductivity material layer below the wafer carrier surface, a refrigerating liquid channel below the high thermal conductivity material layer, and the refrigerating ends of semiconductor refrigerators arranged at intervals with the channels. The refrigerating ends are connected to the heating ends of an external heating stage; The transfer unit is used to transfer the wafer to the pre-cooling stage before the low-temperature ion implantation process for the wafer; The pre-cooling stage is used to pre-cool the wafer; The transfer unit is also used to transfer the wafer into the process chamber for low-temperature ion implantation treatment, and after the low-temperature ion implantation treatment is completed, transfer the wafer to the pre-heating stage; The pre-heating stage is used to pre-heat the wafer; Wherein, the pre-cooling stage and the pre-heating stage are interconnected through a semiconductor temperature control device. The hot end of the semiconductor temperature control device is connected to the pre-heating stage, and the cold end of the semiconductor temperature control device is connected to the pre-cooling stage.

2. The device according to claim 1, characterized in that, The device further includes a transfer chamber connected to the process chamber. The pre-heating stage and the pre-cooling stage are jointly arranged in the transfer chamber of the device, and the transfer chamber is in a vacuum environment.

3. The device according to claim 1, characterized in that, The device further includes a pre-cooling chamber and a transfer chamber. The pre-cooling chamber is connected to the transfer chamber, the transfer chamber is connected to the process chamber, the pre-cooling stage is arranged in the pre-cooling chamber of the device, and the pre-heating stage is arranged in the transfer chamber of the device.

4. The device according to claim 1, characterized in that, The device further includes a pre-cooling chamber connected to the process chamber. The pre-cooling stage is arranged in the pre-cooling chamber of the device, and the pre-heating stage is arranged in the process chamber of the device. The process chamber is in a vacuum environment.

5. The device according to any one of claims 2 to 4, characterized in that, When the transfer unit transfers the current Nth wafer from the pre-cooling stage to the process chamber for low-temperature ion implantation treatment, it is also used to: simultaneously transfer the (N + 1)th wafer to the pre-cooling stage, and transfer the (N - 1)th wafer that has completed the low-temperature ion implantation treatment process to the pre-heating stage, where N is a positive integer greater than 1.

6. The device according to claim 1, characterized in that, The device further includes a transfer chamber and a pre-cooling chamber. The pre-cooling chamber is connected to the transfer chamber, the transfer chamber is connected to the process chamber, the pre-cooling stage is arranged in the pre-cooling chamber of the device, one pre-heating stage is arranged in the process chamber of the device, and the other pre-heating stage is arranged in the transfer chamber of the device. The temperature of the pre-heating stage in the process chamber is lower than that of the pre-heating stage in the transfer chamber; When the transfer unit transfers the current Mth wafer from the pre-cooling stage to the process chamber for low-temperature ion implantation treatment, it simultaneously transfers the (M + 1)th wafer to the pre-cooling stage; and transfers the (M - 1)th wafer that has completed the low-temperature ion implantation treatment process to the first pre-heating stage in the process chamber, and simultaneously transfers the (M - 2)th wafer to the other pre-heating stage in the wafer transfer chamber for pre-heating, where M is a positive integer greater than 2.

7. A low-temperature ion implantation method, applied to the low-temperature ion implantation device according to any one of claims 1 to 6, characterized in that, The method includes: Providing a wafer; Before the low-temperature ion implantation process for the wafer, pre-cooling the wafer using a pre-cooling stage; Transferring the wafer into the process chamber for low-temperature ion implantation treatment, and after the low-temperature ion implantation treatment is completed, pre-heating the wafer using a pre-heating stage; Among them, the pre-cooling table and the pre-heating table are interconnected through a semiconductor temperature control device. The hot end of the semiconductor temperature control device is connected to the pre-heating table, and the cold end of the semiconductor temperature control device is connected to the pre-cooling table.

8. The method according to claim 7, characterized in that, The method further includes: When transferring the current Nth silicon wafer from the pre-cooling table to the process chamber for low-temperature ion implantation treatment, simultaneously transferring the (N + 1)th silicon wafer to the pre-cooling table, and transferring the (N - 1)th silicon wafer that has completed the low-temperature ion implantation treatment process to the pre-heating table.

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