Temperature sensor

Abstract

A temperature sensor, used to detect the temperature of the circuit under test, includes a temperature coefficient component, a multiplier, an impedance component, and a node. The temperature coefficient component is positioned adjacent to the circuit under test. The control terminal of the multiplier is coupled to the second terminal of the temperature coefficient component. The impedance component is coupled between the second terminal of the temperature coefficient component and the control terminal of the multiplier, or between the second terminal of the multiplier and a third voltage terminal. A node is formed between the second terminal of the temperature coefficient component and the control terminal of the multiplier. The voltage at the node is positively correlated with the temperature of the circuit under test. The amplified detection current flowing to the first terminal of the multiplier is positively correlated with the temperature of the circuit under test.

Description

Technical Field

[0001] This invention relates to a temperature detector, and more particularly to a temperature detector that can be used to reflect the temperature change of a circuit under test in an amplified detection current. Background Technology

[0002] Since the performance of electronic devices can be affected by temperature changes, the magnitude of temperature change is one of the most important parameters to consider when designing electronic devices. Temperature sensors are typically used to obtain the magnitude of temperature change. However, improving the sensitivity and accuracy of temperature sensors is a crucial issue in their design. Summary of the Invention

[0003] A temperature sensor, used to detect the temperature of a circuit under test, includes a temperature coefficient component, a multiplier, an impedance component, and a node. The temperature coefficient component is disposed adjacent to the circuit under test and includes a first terminal coupled to either a first or second voltage terminal, and a second terminal. The multiplier includes a first terminal coupled to either the first or second voltage terminal, a second terminal coupled to a third voltage terminal, and a control terminal coupled to the second terminal of the temperature coefficient component. The impedance component is coupled between the second terminal of the temperature coefficient component and the control terminal of the multiplier, or coupled between the second terminal of the multiplier and the third voltage terminal. A node is formed between the second terminal of the temperature coefficient component and the control terminal of the multiplier. The voltage at the node is positively correlated with the temperature of the circuit under test, and the amplified detection current flowing to the first terminal of the multiplier is also positively correlated with the temperature of the circuit under test.

[0004] The bias generator includes a temperature sensor and a bias module. The temperature sensor, used to detect the temperature of the circuit under test, includes a temperature coefficient component, a multiplier, an impedance component, and a node. The temperature coefficient component is located adjacent to the circuit under test and includes a first terminal coupled to either a first or second voltage terminal, and a second terminal. The multiplier includes a first terminal coupled to either the first or second voltage terminal, a second terminal coupled to a third voltage terminal, and a control terminal coupled to the second terminal of the temperature coefficient component. The impedance component is coupled between the second terminal of the temperature coefficient component and the control terminal of the multiplier, or coupled between the second terminal and the third voltage terminal of the multiplier. A node is formed between the second terminal of the temperature coefficient component and the control terminal of the multiplier. The bias module includes an input terminal coupled to the first terminal of the multiplier and an output terminal coupled to the circuit under test. The voltage at the node is positively correlated with the temperature of the circuit under test, and the amplified detection current flowing to the first terminal of the multiplier is also positively correlated with the temperature of the circuit under test. Attached Figure Description

[0005] Figure 1 This is a circuit diagram of a temperature detector according to an embodiment of the present invention.

[0006] Figure 2 This is a circuit diagram of another temperature detector in an embodiment of the present invention.

[0007] Figure 3 This is a circuit diagram of another temperature detector in an embodiment of the present invention.

[0008] Figure 4 yes Figure 3 A circuit diagram of a type of operating voltage circuit.

[0009] Figure 5 yes Figure 3 A circuit diagram of another type of operating voltage circuit.

[0010] Figure 6 This is a circuit diagram of another temperature detector in an embodiment of the present invention.

[0011] Figure 7 This is a circuit diagram of another temperature detector in an embodiment of the present invention.

[0012] Figure 8 This is a schematic diagram illustrating the application of the temperature detector in an embodiment of the present invention.

[0013] Figure 9 This is a schematic diagram illustrating the application of another temperature detector in an embodiment of the present invention.

[0014] Figure 10 yes Figure 8 or Figure 9 Circuit diagram of the medium bias module.

[0015] [Symbol Explanation]

[0016] 1 to 3, 6, 7: Temperature detectors

[0017] 10, 40: Temperature coefficient components

[0018] 12: Multiplier

[0019] 30: Operating voltage circuit

[0020] 60: Current-to-voltage converter

[0021] 80, 90: Bias generator

[0022] 92: Operational amplifier

[0023] 82: Bias Module

[0024] 84: Circuit under test

[0025] 840: Power Amplifier

[0026] 1000: Reference source circuit

[0027] 1001, Q1 to Q3: Transistors

[0028] 1003, R1 to R3: Resistors

[0029] 1004, 1005: Diodes

[0030] Ibias: Bias current

[0031] Ia: Amplify the detected current

[0032] Icc: Supply current

[0033] Id, Id': Temperature detection current

[0034] If, Isq1, Isq2: Current

[0035] N1: Node

[0036] Sin: Input signal

[0037] Sout: Output signal

[0038] Va: Amplified detection voltage

[0039] Vref1 to Vref5, Vcsq1 to Vcsq3: Voltage

[0040] Z1, Z2: Impedance components

[0041] ΔV: Differential voltage Detailed Implementation

[0042] Figure 1 This is a circuit diagram of a temperature detector 1 according to an embodiment of the present invention. The temperature detector 1 can be used to detect the temperature of the circuit under test and generate an amplified detection current Ia accordingly. The temperature of the circuit under test can change over time. In other words, the temperature detector 1 can be used to reflect the temperature change of the circuit under test in the amplified detection current Ia.

[0043] Temperature sensor 1 may include a temperature coefficient component 10, a multiplier 12, and a node N1. The temperature coefficient component 10 may be positioned adjacent to the circuit under test, for example, within a range of 20 to 50 micrometers, to accurately detect the temperature of the circuit under test. The temperature coefficient component 10 may include a first terminal and a second terminal. The first terminal of the temperature coefficient component 10 may be coupled to a first voltage terminal or a second voltage terminal. The multiplier 12 may include a first terminal, a second terminal, and a control terminal. The first terminal of the multiplier 12 may be coupled to a first voltage terminal or a second voltage terminal, the second terminal may be coupled to a third voltage terminal, and the control terminal may be coupled to the second terminal of the temperature coefficient component 10. The first terminal of the temperature coefficient component 10 and the first terminal of the multiplier 12 may be selectively coupled to the same or different voltage terminals based on the actual application and design requirements. The first voltage terminal may be used to provide voltage Vref1. The second voltage terminal may be used to provide voltage Vref2. Voltages Vref1 and Vref2 may be the operating voltages of the system and may be substantially fixed. Furthermore, voltages Vref1 and Vref2 may have the same or different potentials. In some embodiments, voltages Vref1 and / or Vref2 may be provided by external circuitry, such as a low dropout regulator (LDO). A third voltage terminal may be used to provide voltage Vref3. Voltage Vref3 may be the system's ground voltage, such as 0V. Node N1 is formed between the second terminal of temperature coefficient component 10 and the control terminal of multiplier 12.

[0044] Temperature coefficient component 10 can be a negative temperature coefficient component, meaning its turn-on voltage is negatively correlated with the temperature of the circuit under test. Temperature coefficient component 10 may include transistor Q2. Transistor Q2 may include a first terminal coupled to the first terminal of temperature coefficient component 10, a second terminal coupled to the second terminal of temperature coefficient component 10, and a control terminal coupled to the first terminal of transistor Q2. In other words, transistor Q2 is a diode-connected transistor. The turn-on voltage of temperature coefficient component 10 can be considered as the voltage Vcsq2 between the control terminal and the second terminal of transistor Q2. When the temperature of the circuit under test rises, voltage Vcsq2 decreases; conversely, when the temperature of the circuit under test decreases, voltage Vcsq2 increases. For example, at high temperatures, voltage Vcsq2 may be 0.6 volts (V), while at low temperatures, voltage Vcsq2 may be 0.8 V. Transistor Q2 may be a bipolar junction transistor (BJT). The transistor Q2 may have a first terminal as the collector, a second terminal as the emitter, and a control terminal as the base. In some embodiments, the transistor Q2 may be replaced by a diode. The diode may include a first terminal coupled to a first terminal of the temperature coefficient component 10, and a second terminal coupled to a second terminal of the temperature coefficient component 10. The first terminal of the diode may be the anode, and the second terminal may be the cathode.

[0045] Multiplier 12 amplifies the temperature sensing current Id to generate an amplified sensing current Ia. Specifically, the temperature sensing current Id flows to the control terminal of multiplier 12, and the amplified sensing current Ia flows to the first terminal of multiplier 12. Multiplier 12 may include transistor Q1. Transistor Q1 may include a first terminal coupled to the first terminal of multiplier 12, a second terminal coupled to the second terminal of multiplier 12, and a control terminal coupled to the control terminal of multiplier 12. Transistor Q1 may be a BJT. The first terminal of transistor Q1 may be the collector, the second terminal may be the emitter, and the control terminal may be the base. Transistor Q1 substantially amplifies the temperature sensing current Id flowing to its control terminal by a factor of β to generate an amplified sensing current Ia at its first terminal, i.e., Ia = β * Id. β is the current gain of transistor Q1, for example, β may be between 10 and 100. For example, when the temperature of the circuit under test changes over time, the temperature detection current Id also changes accordingly. A small change in the temperature detection current Id can be amplified by transistor Q1 into a relatively large amplified detection current Ia. In this way, the temperature change of the circuit under test can be determined by amplifying the detection current Ia, which helps improve the temperature detection sensitivity and accuracy of the temperature detector 1. Transistors Q1 and Q2 can be the same type of transistor, for example, both can be NPN BJTs. In some embodiments, transistors Q1 and Q2 can both be PNP BJTs. In some embodiments, the multiplier 12 and the temperature coefficient component 10 can both be located adjacent to the circuit under test, and the same type of transistors, such as transistors Q1 and Q2, can have the same on-state voltage. In some embodiments, the multiplier 12 can be implemented by a digital multiplier.

[0046] The relationship between the current Isq2 flowing out of the second terminal of transistor Q2 and the voltage Vcsq2 can be approximated by the current-voltage characteristic curve (IV characteristic curve) of a typical diode. That is, when the temperature of the circuit under test rises, the voltage Vcsq2 decreases, and the current Isq2 increases. The temperature sensing current Id can be considered as the current Isq2, meaning the temperature sensing current Id also increases. The temperature sensing current Id is positively correlated with the temperature of the circuit under test. On the other hand, since the amplified sensing current Ia is positively correlated with the temperature sensing current Id, the amplified sensing current Ia also increases, and the amplified sensing current Ia is also positively correlated with the temperature of the circuit under test. Furthermore, the current Isq1 flowing out of the second terminal of transistor Q1 can be approximated as the sum of the temperature sensing current Id and the amplified sensing current Ia; therefore, the current Isq1 will also increase. Therefore, as the temperature of the circuit under test rises over time, the temperature detection current Id, the amplified detection current Ia, and the current Isq1 will increase continuously. As a result, the operating temperature of transistor Q1 will also rise, causing the temperature detection current Id, the amplified detection current Ia, and the current Isq1 to increase again, forming a vicious cycle that may lead to thermal runaway of transistor Q1.

[0047] To improve the above situation, the temperature detector 1 may further include an impedance component Z1. The impedance component Z1 is coupled between the second terminal of the temperature coefficient component 10 and the control terminal of the multiplier 12. That is, the control terminal of the multiplier 12 is coupled to the second terminal of the temperature coefficient component 10 through the impedance component Z1. The impedance component Z1 can serve as a current negative feedback component. In some embodiments, the impedance component Z1 may be a resistor, a capacitor, an inductor, or a combination thereof. Figure 1Taking impedance component Z1, including resistor R1, as an example, when the temperature of the circuit under test rises, the voltage Vcsq2 decreases, while the currents Isq2, temperature sensing current Id, amplified sensing current Ia, and Isq1 increase. The voltage at node N1 can be considered as voltage Vref1 or Vref2 minus voltage Vcsq2, thus increasing the voltage at node N1. The voltage at node N1 is positively correlated with the temperature of the circuit under test. The voltage at the control terminal of transistor Q1 can be considered as the voltage at node N1 minus the voltage drop across resistor R1, where the voltage drop across resistor R1 is the product of the temperature sensing current Id and the resistance of resistor R1. In other words, the temperature sensing current Id, which is proportional to the temperature of the circuit under test, allows resistor R1 to provide a larger voltage drop between node N1 and the control terminal of transistor Q1, thereby reducing the voltage at the control terminal of transistor Q1. For example, resistor R1 can be used to maintain the voltage at the control terminal of transistor Q1 from substantially increasing with rising temperature. On the other hand, the voltage Vcsq1 between the control terminal and the second terminal of transistor Q1 can be considered as the voltage at the control terminal of transistor Q1 minus the voltage at the second terminal of transistor Q1, while the voltage at the second terminal of transistor Q1 can be considered as voltage Vref3. Therefore, reducing the voltage at the control terminal of transistor Q1 will cause voltage Vcsq1 to also decrease. Furthermore, the amplified detection current Ia can also be expressed as... Where Is is the saturation current of transistor Q1, and Vt is the thermal voltage. That is, reducing the voltage Vcsq1 can further reduce the amplified detection current Ia, which would otherwise continue to increase, for example, reducing it to the linear operating range of the amplified detection current Ia. The temperature detection current Id and the current Isq1 will also relatively decrease to their linear operating range, thereby helping to reduce the risk of thermal runaway in transistor Q1. In some embodiments, the temperature coefficient component 10 and the impedance component Z1 can form a bias circuit to provide bias to the multiplier 12.

[0048] Figure 2 This is a circuit diagram of another temperature detector 2 in an embodiment of the present invention. The difference between temperature detector 2 and 1 lies in the position of the impedance component Z1. The impedance component Z1 can be coupled between the second terminal and the third voltage terminal of the multiplier 12. That is, the second terminal of the multiplier 12 is coupled to the third voltage terminal through the impedance component Z1. The resistance value of resistor R1 in temperature detector 2 can be less than the resistance value of resistor R1 in temperature detector 1. The resistance value of resistor R1 in temperature detector 1 can be (β+1) times the resistance value of resistor R1 in temperature detector 2.

[0049] When the temperature of the circuit under test rises, the voltage Vcsq2 decreases, while the currents Isq2, temperature sensing current Id, amplified sensing current Ia, and current Isq1 increase. The voltage at node N1 can be considered as voltage Vref1 or Vref2 minus voltage Vcsq2, thus increasing the voltage at node N1. The voltage at node N1 is positively correlated with the temperature of the circuit under test. Voltage Vcsq1 can be considered as the voltage at node N1 minus the voltage at the second terminal of transistor Q1, and the voltage at the second terminal of transistor Q1 can be considered as the voltage drop across resistor R1. Since the voltage drop across resistor R1 is the product of current Isq1 and resistance, current Isq1, which is proportional to the temperature of the circuit under test, provides a larger voltage drop across resistor R1 between the second and third terminals of transistor Q1, thereby reducing voltage Vcsq1. Furthermore, the amplified sensing current Ia can also be expressed as... The reduction of voltage Vcsq1 can further reduce the amplified detection current Ia, which would otherwise continue to increase, for example, to the linear operating range of the amplified detection current Ia. The temperature detection current Id and current Isq1 will also be reduced to their linear operating range. This will help reduce the risk of thermal runaway of transistor Q1.

[0050] Figure 3 This is a circuit diagram of another temperature detector 3 in an embodiment of the present invention. Temperature detector 3 is similar to 1, except that it further includes an operating voltage circuit 30. The operating voltage circuit 30 includes a first terminal coupled to node N1 and a second terminal coupled to a third voltage terminal.

[0051] The operating voltage circuit 30 may be disposed remotely from the circuit under test relative to the temperature coefficient component 10. For example, the temperature coefficient component 10 and the circuit under test may be disposed on a first die within a chip, and the operating voltage circuit 30 may be disposed on a second die within the chip. The first die may be a gallium arsenide (GaAs) die, and the second die may be a silicon-on-insulator (SOI) die. The operating voltage circuit 30 may include a temperature coefficient component and an impedance component connected in series between a first terminal and a second terminal of the operating voltage circuit 30. The temperature coefficient component may include a transistor or a diode. The impedance component may be a resistor, a capacitor, an inductor, or a combination thereof. In some embodiments, the temperature coefficient component 10, the impedance component Z1, and the operating voltage circuit 30 may form a bias circuit to provide a more stable bias to the multiplier 12. Furthermore, the operating voltage circuit 30 may also be used to improve the temperature detection sensitivity of the temperature sensor 3. In some embodiments, the temperature sensor 2 may also employ an operating voltage circuit 30 to provide a more stable bias voltage to the multiplier 12 and improve the temperature detection sensitivity of the temperature sensor 2. In some embodiments, the operating voltage circuit 30 is also disposed away from the circuit under test relative to the multiplier 12; for example, the multiplier 12, the temperature coefficient component 10, and the circuit under test may be disposed on a first die, while the operating voltage circuit 30 may be disposed on a second die. In some embodiments, the impedance component Z1 may also be selectively disposed on the first die based on actual application and design requirements.

[0052] Figure 4 yes Figure 3 A circuit diagram of an operating voltage circuit 30 is shown. The operating voltage circuit 30 is illustrated by an example in which impedance component Z2 and temperature coefficient component 40 are connected in series between the first and second terminals of the operating voltage circuit 30.

[0053] Impedance component Z2 may include resistor R2. Resistor R2 may include a first terminal coupled to a first terminal of operating voltage circuit 30 and a second terminal. Temperature coefficient component 40 may include transistor Q3. Transistor Q3 may include a first terminal coupled to the second terminal of resistor R2, a second terminal coupled to the second terminal of operating voltage circuit 30, and a control terminal coupled to the first terminal of transistor Q3. In other words, transistor Q3 is a transistor connected in a diode configuration. The forward voltage of transistor Q3 can be considered as the voltage Vcsq3 between the control terminal and the second terminal of transistor Q3. Transistor Q3 may be a BJT. The first terminal of transistor Q3 may be the collector terminal, the second terminal may be the emitter terminal, and the control terminal may be the base terminal. In some embodiments, transistor Q3 may be replaced by a diode. The diode may include a first terminal coupled to the second terminal of resistor R2 and a second terminal coupled to the second terminal of operating voltage circuit 30. The first terminal of the diode may be the anode, and the second terminal may be the cathode.

[0054] Since the operating voltage circuit 30 is located far from the circuit under test, for example at room temperature of 25°C, the voltage Vcsq3 can be substantially unaffected by temperature changes in the circuit under test. In other words, the voltage Vcsq3 can be substantially fixed and independent of temperature variations in the circuit under test. Please also refer to... Figure 3 and Figure 4 The temperature detection current Id' flowing to the operating voltage circuit 30 can be approximated by subtracting the voltage Vcsq3 from the voltage at node N1 and then dividing by the resistance value of resistor R2. Since the voltage at node N1 is positively correlated with the temperature of the circuit under test, the temperature detection current Id' will increase as the temperature of the circuit under test rises. On the other hand, in temperature detector 3, the current Isq2 can be approximated by the sum of the temperature detection currents Id and Id'. Therefore, the current value of Isq2 in temperature detector 3 will be greater than the current value of Isq2 in temperature detector 1. In other words, the operating voltage circuit 30 makes the change in current Isq2 more pronounced, thus helping to improve the temperature detection sensitivity of temperature detector 3.

[0055] Figure 5 yes Figure 3 The circuit diagram of another operating voltage circuit 30. Figure 5 and Figure 4 The difference between the operating voltage circuit 30 and the temperature coefficient component 40 and impedance component Z2 is that their coupling order is reversed. Figure 5 The operating voltage circuit 30 is exemplified by a temperature coefficient component 40 and an impedance component Z2 connected in series between the first and second terminals of the operating voltage circuit 30. The transistor Q3 in the temperature coefficient component 40 may include a first terminal coupled to the first terminal of the operating voltage circuit 30, a second terminal, and a control terminal coupled to the first terminal of the transistor Q3. The resistor R2 in the impedance component Z2 may include a first terminal coupled to the second terminal of the transistor Q3, and a second terminal coupled to the second terminal of the operating voltage circuit 30. Figure 5 and Figure 4 The operation of the operating voltage circuit 30 is similar, and will not be described in detail here.

[0056] Figure 6 This is a circuit diagram of another temperature detector 6 in an embodiment of the present invention. Temperature detector 6 is similar to 3, except that it further includes a current-to-voltage converter 60. The current-to-voltage converter 60 includes a first terminal and a second terminal. The first terminal of the current-to-voltage converter 60 is coupled to a first voltage terminal or a second voltage terminal, and the second terminal of the current-to-voltage converter 60 is coupled to the first terminal of the multiplier 12. That is, the first terminal of the multiplier 12 can be coupled to the first voltage terminal or the second voltage terminal through the current-to-voltage converter 60. The current-to-voltage converter 60 may include a resistor R3.

[0057] The current flowing through the current-to-voltage converter 60 can be considered as an amplified detection current Ia, which can be converted into an amplified detection voltage Va. Since the amplified detection current Ia is positively correlated with the temperature of the circuit under test, the amplified detection voltage Va is also positively correlated with the temperature of the circuit under test. In other words, the temperature sensor 6 can be used to reflect the temperature change of the circuit under test in the amplified detection voltage Va. In some embodiments, the operating voltage circuit 30 may be omitted from the temperature sensor 6 depending on the actual application and design requirements.

[0058] Figure 7 This is a circuit diagram of another temperature detector 7 in an embodiment of the present invention. Temperature detector 7 is similar to 6, except for the coupling method of the current-to-voltage converter 60. The first terminal of the current-to-voltage converter 60 is coupled to a first voltage terminal or a second voltage terminal, and the second terminal of the current-to-voltage converter 60 is coupled to the first terminal of the multiplier 12 and the first terminal of the temperature coefficient component 10. Furthermore, the first terminal of the multiplier 12 and the first terminal of the temperature coefficient component 10 can be coupled to the first voltage terminal or the second voltage terminal through the current-to-voltage converter 60. That is, the first terminal of the multiplier 12 and the first terminal of the temperature coefficient component 10 can be coupled to the same voltage terminal through the current-to-voltage converter 60.

[0059] The current If flowing to the first terminal of the temperature coefficient component 10 can be approximately equal to the current Isq2, while the current flowing through the current-to-voltage converter 60 can be considered as the sum of the current Isq2 and the amplified detection current Ia. Therefore, the current flowing through the current-to-voltage converter 60 in the temperature detector 7 is greater than the current flowing through the current-to-voltage converter 60 in the temperature detector 6. In other words, the change in current flowing through the current-to-voltage converter 60 in the temperature detector 7 is more significant, which helps to improve the temperature detection sensitivity of the temperature detector 7. The current-to-voltage converter 60 can be used to convert the current flowing through it into an amplified detection voltage Va. Since the current Isq2 and the amplified detection current Ia are positively correlated with the temperature of the circuit under test, the amplified detection voltage Va is also positively correlated with the temperature of the circuit under test. In other words, the temperature detector 7 can be used to reflect the temperature change of the circuit under test in the amplified detection voltage Va. In some embodiments, the operating voltage circuit 30 of the temperature detector 7 can be omitted depending on the actual application and design requirements. In some embodiments, the temperature detector 2 can also be... Figure 6 or Figure 7 The current-to-voltage converter 60 is used to reflect the temperature change of the circuit under test in the amplified detection voltage Va.

[0060] Figure 8 This is a schematic diagram illustrating the application of the temperature sensor 3 in an embodiment of the present invention. The temperature sensor 3 and the bias module 82 can be used to form part of the bias generator 80. Figure 8As shown, the bias generator 80 may include a temperature sensor 3 and a bias module 82. The bias generator 80 can not only detect the temperature of the circuit under test 84 through the temperature sensor 3 to generate an amplified detection current Ia, but also adjust the bias current Ibias according to the amplified detection current Ia through the bias module 82. Please also refer to... Figure 3 and Figure 8 The bias module 82 may include an input terminal, such as one coupled to the first terminal of the multiplier 12, for receiving the amplified detection current Ia, and an output terminal coupled to the circuit under test 84. The circuit under test 84 may include a power amplifier 840. The power amplifier 840 may include an input terminal for receiving an input signal Sin, an output terminal for outputting an output signal Sout, a bias terminal coupled to the output terminal of the bias module 82 for receiving a bias current Ibias, and a power supply terminal for receiving a supply current Icc. The power amplifier 840 may be biased by the bias current Ibias and the supply current Icc may be adjusted according to the bias current Ibias. The setup and operation of the temperature sensor 3 have been explained in the previous paragraphs and will not be repeated here.

[0061] The gain of power amplifier 840 can change with its temperature. For example, the temperature of power amplifier 840 can increase with its operating time, resulting in a decrease in gain. When the temperature of power amplifier 840 rises, bias module 82 can detect the amount of temperature change of power amplifier 840 by the increase in amplified detection current Ia as the temperature rises, and adjust the bias current Ibias accordingly, for example, by increasing the bias current Ibias. Power amplifier 840 can then adjust the supply current Icc according to the bias current Ibias, for example, by increasing the supply current Icc, and maintain the supply current Icc within the linear operating range. In this way, the gain change caused by the temperature change of power amplifier 840 can be compensated, thereby maintaining the gain of power amplifier 840 within a predetermined gain range, which helps to improve the performance of power amplifier 840. In some embodiments, temperature sensor 1 or 2 can also be used instead of temperature sensor 3 to detect the temperature of power amplifier 840 and generate amplified detection current Ia accordingly.

[0062] Figure 9 This is a schematic diagram illustrating the application of another temperature sensor 7 in an embodiment of the present invention. The difference between bias generators 90 and 80 lies in the inclusion of an operational amplifier 92 and the use of temperature sensor 7 instead of temperature sensor 3. Operational amplifier 92 includes a first input terminal coupled to a fourth voltage terminal for receiving voltage Vref4, a second input terminal coupled to the second terminal of current-to-voltage converter 60 for receiving and amplifying the detected voltage Va, and an output terminal coupled to the input terminal of bias module 82 for outputting a differential voltage ΔV. Figure 9In this configuration, the input terminal of the bias module 82 is coupled to the first terminal of the multiplier 12 through the operational amplifier 92. In some embodiments, the voltage Vref4 may have substantially the same potential as the voltages Vref1 and / or Vref2.

[0063] Operational amplifier 92 amplifies the difference between voltage Vref4 and the amplified detection voltage Va to generate a difference voltage ΔV at the output of operational amplifier 92. The difference voltage ΔV is positively correlated with the amplified detection current Ia. Bias module 82 adjusts the bias current Ibias based on the difference voltage ΔV. Power amplifier 840 is biased by the bias current Ibias and adjusts the supply current Icc based on the bias current Ibias. The setup and operation of temperature sensor 7 have been explained in previous paragraphs and will not be repeated here.

[0064] The gain of power amplifier 840 can change with its temperature. For example, the temperature of power amplifier 840 can increase with its operating time, resulting in a decrease in gain. When the temperature of power amplifier 840 rises, the amplification detection current Ia increases, and the differential voltage ΔV also increases. The bias module 82 can determine the amount of temperature change of power amplifier 840 from the increase in differential voltage ΔV with the temperature rise, and adjust the bias current Ibias accordingly, for example, by increasing the bias current Ibias. Power amplifier 840 can then adjust the supply current Icc according to the bias current Ibias, for example, by increasing the supply current Icc, and maintain the supply current Icc within the linear operating range. In this way, the gain change caused by the temperature change of power amplifier 840 can be compensated, thereby maintaining the gain of power amplifier 840 within a predetermined gain range, which helps to improve the performance of power amplifier 840. In some embodiments, temperature sensor 6 can also be used instead of temperature sensor 7 to detect the temperature of power amplifier 840 and generate amplification detection voltage Va accordingly.

[0065] Figure 10 yes Figure 8 or Figure 9A circuit diagram of the bias module 82. The bias module 82 may include a reference source circuit 1000, a resistor 1003, diodes 1004 and 1005, and a transistor 1001. The reference source circuit 1000 is coupled to the input terminal of the bias module 82. The resistor 1003 may include a first terminal coupled to the reference source circuit 1000 and a second terminal. The diode 1004 may include a first terminal coupled to the second terminal of the resistor 1003 and a second terminal. The diode 1005 may include a first terminal coupled to the second terminal of the diode 1004 and a second terminal coupled to a third voltage terminal. The transistor 1001 may include a first terminal coupled to a fifth voltage terminal, a second terminal coupled to the output terminal of the bias module 82, and a control terminal coupled to the second terminal of the resistor 1003 and the first terminal of the diode 1004. The fifth voltage terminal can be used to provide a voltage Vref5. The voltage Vref5 may have substantially the same potential as voltages Vref1 and / or Vref2. The first terminal of diodes 1004 and 1005 can be the anode, and the second terminal can be the cathode. In some embodiments, diodes 1004 and / or 1005 can be transistors connected in diode form.

[0066] The reference source circuit 1000 can be a voltage source or a current source. For example, when temperature sensors 1, 2, or 3 and bias module 82 are used to form part of bias generator 80, the reference source circuit 1000 can be a current source, thereby allowing bias module 82 to adjust bias current Ibias based on the amplified detection current Ia. When temperature sensors 6 or 7, bias module 82, and operational amplifier 92 are used to form part of bias generator 90, the reference source circuit 1000 can be a voltage source, thereby allowing bias module 82 to adjust bias current Ibias based on the difference voltage ΔV related to the amplified detection current Ia.

[0067] The temperature sensor provided in this embodiment can not only achieve a positive correlation between the temperature sensing current and the temperature of the circuit under test by appropriately designing temperature coefficient components, such as using a negative temperature coefficient component and placing it close to the circuit under test, but also amplify the small changes in the temperature sensing current into a relatively large amplified sensing current through a multiplier. This allows the temperature changes of the circuit under test to be more significantly reflected in the amplified sensing current, thus improving the temperature sensing sensitivity and accuracy of the temperature sensor. Furthermore, when the temperature sensor is part of a bias generator, the amplified sensing current can be further used to mitigate the effects of temperature changes on the circuit under test.

[0068] The above description is only a preferred embodiment of the present invention. All equivalent changes and modifications made within the scope of the claims of the present invention should be included within the scope of the present invention.

Claims

1. A temperature detector, characterized in that, Used to detect the temperature of a circuit under test, including: A first temperature coefficient component is disposed adjacent to the circuit under test, including a first terminal coupled to a first voltage terminal or a second voltage terminal, and a second terminal; A multiplier includes a first terminal coupled to the first voltage terminal or the second voltage terminal, a second terminal coupled to the third voltage terminal, and a control terminal coupled to the second terminal of the first temperature coefficient component. A first impedance component is coupled between the second terminal of the first temperature coefficient component and the control terminal of the multiplier, or coupled between the second terminal of the multiplier and the third voltage terminal. A node is formed between the second terminal of the first temperature coefficient component and the control terminal of the multiplier; and An operating voltage circuit includes a first terminal coupled to the node and a second terminal coupled to the third voltage terminal; The voltage at the node is positively correlated with the temperature of the circuit under test, and the amplified detection current flowing to the first terminal of the multiplier is positively correlated with the temperature of the circuit under test.

2. The temperature detector as described in claim 1, characterized in that, The multiplier includes a first transistor, which has a first terminal coupled to the first terminal of the multiplier, a second terminal coupled to the second terminal of the multiplier, and a control terminal coupled to the control terminal of the multiplier.

3. The temperature detector as described in claim 2, characterized in that, The first transistor is a bipolar junction transistor, the first terminal of the first transistor is the collector terminal, the second terminal of the first transistor is the emitter terminal, and the control terminal of the first transistor is the base terminal.

4. The temperature detector as described in claim 1, characterized in that, The relationship between the on-state voltage of the first temperature coefficient component and the temperature of the circuit under test is negatively correlated.

5. The temperature detector as described in claim 4, characterized in that, The first temperature coefficient component includes a second transistor, which has a first terminal coupled to the first terminal of the first temperature coefficient component, a second terminal coupled to the second terminal of the first temperature coefficient component, and a control terminal coupled to the first terminal of the second transistor.

6. The temperature detector as described in claim 4, characterized in that, The first temperature coefficient component includes a first diode, which has a first terminal coupled to the first terminal of the first temperature coefficient component and a second terminal coupled to the second terminal of the first temperature coefficient component.

7. The temperature detector as claimed in claim 1, characterized in that, The first impedance component includes a first resistor.

8. The temperature detector as claimed in claim 1, characterized in that, The operating voltage circuit is positioned far from the circuit under test relative to the first temperature coefficient component.

9. The temperature detector as claimed in claim 1, characterized in that, The first temperature coefficient component and the circuit under test are disposed in a first die, and the operating voltage circuit is disposed in a second die.

10. The temperature detector as claimed in claim 9, characterized in that, The first grain is a gallium arsenide grain, and the second grain is a silicon-on-insulator grain.

11. The temperature detector as claimed in claim 1, characterized in that, The operating voltage circuit includes: A second temperature coefficient component and a second impedance component are connected in series between the first terminal and the second terminal of the operating voltage circuit.

12. The temperature detector as claimed in claim 11, characterized in that, The second temperature coefficient component includes a third transistor or a second diode.

13. The temperature detector as claimed in claim 11, characterized in that, The second impedance component includes a second resistor.

14. The temperature detector as claimed in claim 1, characterized in that, Also includes: A current-to-voltage converter, comprising a first terminal and a second terminal; The first terminal of the current-to-voltage converter is coupled to either the first voltage terminal or the second voltage terminal, the second terminal of the current-to-voltage converter is coupled to the first terminal of the multiplier, and the first terminal of the multiplier is coupled to either the first voltage terminal or the second voltage terminal through the current-to-voltage converter; or The first terminal of the current-to-voltage converter is coupled to the first voltage terminal or the second voltage terminal, the second terminal of the current-to-voltage converter is coupled to the first terminal of the multiplier and the first terminal of the first temperature coefficient component, and the first terminal of the multiplier and the first terminal of the first temperature coefficient component are coupled to the first voltage terminal or the second voltage terminal through the current-to-voltage converter.

15. The temperature detector as claimed in claim 14, characterized in that, The current-to-voltage converter includes a third resistor.

16. A bias generator, characterized in that, include: A temperature sensor for detecting the temperature of a circuit under test, comprising: A first temperature coefficient component is disposed adjacent to the circuit under test, including a first terminal coupled to a first voltage terminal or a second voltage terminal, and a second terminal; A multiplier includes a first terminal coupled to the first voltage terminal or the second voltage terminal, a second terminal coupled to the third voltage terminal, and a control terminal coupled to the second terminal of the first temperature coefficient component. A first impedance component is coupled between the second terminal of the first temperature coefficient component and the control terminal of the multiplier, or coupled between the second terminal of the multiplier and the third voltage terminal. A node is formed between the second end of the first temperature coefficient component and the control end of the multiplier; and An operating voltage circuit includes a first terminal coupled to the node and a second terminal coupled to the third voltage terminal; and A bias module includes an input terminal coupled to the first terminal of the multiplier and an output terminal coupled to the circuit under test; wherein the voltage at the node is positively correlated with the temperature of the circuit under test, and an amplified detection current flowing to the first terminal of the multiplier is positively correlated with the temperature of the circuit under test.

17. The bias generator as claimed in claim 16, characterized in that, Also includes: A current-to-voltage converter, comprising a first terminal and a second terminal; The first terminal of the current-to-voltage converter is coupled to either the first voltage terminal or the second voltage terminal, the second terminal of the current-to-voltage converter is coupled to the first terminal of the multiplier, and the first terminal of the multiplier is coupled to either the first voltage terminal or the second voltage terminal through the current-to-voltage converter; or The first terminal of the current-to-voltage converter is coupled to the first voltage terminal or the second voltage terminal, the second terminal of the current-to-voltage converter is coupled to the first terminal of the multiplier and the first terminal of the first temperature coefficient component, and the first terminal of the multiplier and the first terminal of the first temperature coefficient component are coupled to the first voltage terminal or the second voltage terminal through the current-to-voltage converter.

18. The bias generator as claimed in claim 17, characterized in that, Also includes: An operational amplifier includes a first input terminal coupled to a fourth voltage terminal, a second input terminal coupled to the second terminal of the current-to-voltage converter, and an output terminal coupled to the input terminal of the bias module. The input terminal of the bias module is coupled to the first terminal of the multiplier through the operational amplifier.

19. The bias generator as claimed in claim 16, characterized in that, The circuit under test includes a power amplifier.

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