Temperature compensated resonator and method of manufacturing the same

Abstract

The temperature compensation type resonator (10) of the present invention comprises a piezoelectric substrate layer (1); a first bus bar (2a) and a second bus bar (2b) formed on the piezoelectric substrate layer in parallel with each other; a plurality of first interdigitated electrodes (3a) formed on the first bus bar; a plurality of second interdigitated electrodes (3b) formed on the second bus bar; a plurality of first thickened layers (4a) formed on the ends of the plurality of first interdigitated electrodes away from the first bus bar and on the ends of the second interdigitated electrodes away from the second bus bar; a plurality of second thickened layers (4b) formed on the plurality of first interdigitated electrodes at locations flush with the ends of adjacent second interdigitated electrodes and on the plurality of second interdigitated electrodes at locations flush with the ends of adjacent first interdigitated electrodes; and a temperature compensation layer (5) covering the piezoelectric substrate layer, the first bus bar, the second bus bar, the first interdigitated electrodes and the second interdigitated electrodes, wherein the bus bar regions between adjacent first interdigitated electrodes and the bus bar regions between adjacent second interdigitated electrodes are both arc-shaped.

Description

Technical Field

[0001] The present invention relates to a temperature compensated resonator and a manufacturing method thereof, and in particular to a temperature compensated resonator applied to a radio frequency front-end filter and a manufacturing method thereof. Background Art

[0002] Surface acoustic wave devices (SAW: Surface Acoustic Wave) are a type of resonator. For surface acoustic wave devices, their operating frequency is very sensitive to temperature and has the characteristic of frequency drifting with the operating temperature. Since the specified operating temperature range of the device is large, usually -20℃ to 85℃, this limitation has an increasingly serious impact on the device. In the 5G communication era where frequency bands are becoming increasingly crowded, it is difficult to meet the requirements of RF terminals for filters. Therefore, in order to improve the temperature stability of surface acoustic wave devices and reduce the impact of temperature on their operating frequency, the demand for TC-SAW (Temperature Compensated Surface Acoustic Wave: temperature compensated surface acoustic wave filter) in the mobile phone RF front end itself is increasing.

[0003] For temperature-compensated resonators, interdigital electrodes are usually formed on a lithium niobate (LiNbO3) piezoelectric substrate layer, and then a layer of temperature compensation material with a positive temperature coefficient, such as silicon dioxide (SiO2), is covered on the interdigital electrodes to suppress the frequency drift caused by temperature changes. However, due to the difference in acoustic impedance between the piezoelectric substrate layer and the temperature compensation material with a large positive temperature coefficient, a strong stray response will be generated when the positive temperature coefficient material is introduced.

[0004] For the above-mentioned spurious responses, the prior art generally adopts the weighting method or the end piston method, that is, the end is thickened and widened to suppress the spurious responses. However, when the weighting method is adopted, on the one hand, the effective aperture of the resonator will be reduced, resulting in a lower Q value, and on the other hand, the size of the device will be increased, which is not conducive to the miniaturization of the device. When the end piston method is adopted, Figure 8 As shown in the figure, although the spurious response can be effectively suppressed, there are many limitations when using the end piston method in higher frequency bands. This is because the high frequency band means that the finger spacing of the interdigitated electrode will be greatly reduced. Limited by the accuracy of the lithography machine, widening the ends of each finger can easily cause a short circuit between the fingers, resulting in device failure. However, if only the ends of the interdigitated electrode are thickened, it is often impossible to completely suppress the spurious response and ensure a higher Q value.

[0005] In addition, a curved resonator structure is proposed in the research report "A Novel Structure to Suppress Transverse Modes in Radio Frequency TC-SAW Resonators and Filters", such as Fig. 9 As shown in the study, it is pointed out that setting the entire busbar in an arc shape can suppress spurious responses. However, the study also pointed out that setting the center angle of the arc shape within 20° will have a better effect. Despite this, this method still cannot completely suppress spurious responses and will also increase the size of the device. Therefore, how to solve the above problems is particularly important in the design of temperature compensated resonators. Summary of the invention

[0006] Technical problem to be solved by the invention

[0007] The present invention is made to solve the above-mentioned problem, and its purpose is to provide a temperature compensated resonator without spurious response. Specifically, it is possible to provide a temperature compensated resonator that can suppress the spurious response caused by the introduction of temperature compensating materials while ensuring temperature stability, and can ensure that the temperature compensated resonator has a high Q value.

[0008] Technical means for solving technical problems

[0009] The temperature-compensated resonator of the present invention comprises: a piezoelectric substrate layer; a first bus bar and a second bus bar, wherein the first bus bar and the second bus bar are formed on the piezoelectric substrate layer in a manner parallel to each other; a plurality of first interdigital electrodes, wherein the plurality of first interdigital electrodes are formed on the first bus bar in a manner extending toward one side of the second bus bar; a plurality of second interdigital electrodes, wherein the plurality of second interdigital electrodes are formed on the second bus bar in a manner extending toward between adjacent first interdigital electrodes; and a plurality of first thickening layers, wherein the plurality of first thickening layers are formed on the ends of the plurality of first interdigital electrodes away from the first bus bar and on the ends of the plurality of second interdigital electrodes away from the first bus bar. An end away from the second bus bar; a plurality of second thickened layers, wherein the plurality of second thickened layers are formed on a plurality of first interdigitated electrodes at a position flush with the end of the adjacent second interdigitated electrodes, and on a plurality of second interdigitated electrodes at a position flush with the end of the adjacent first interdigitated electrodes; and a temperature compensation layer, wherein the temperature compensation layer covers the piezoelectric substrate layer, the first bus bar, the second bus bar, the first interdigitated electrodes and the second interdigitated electrodes, and the bus bar areas between the adjacent first interdigitated electrodes on the first bus bar are all arc-shaped, and the bus bar areas between the adjacent second interdigitated electrodes on the second bus bar are all arc-shaped.

[0010] Furthermore, the material of the piezoelectric substrate layer is lithium niobate.

[0011] Furthermore, the material of the first interdigital electrode and the second interdigital electrode is the same as the material of the first thickened layer and the second thickened layer, which are one or more of aluminum, copper, and platinum.

[0012] Furthermore, the cutting angle of the piezoelectric substrate layer is 130°±5°, and the corresponding Euler angle is (0°, 40.5°±5°, 0°).

[0013] Furthermore, the cutting angle of the piezoelectric substrate layer is 130.5°, and the corresponding Euler angle is (0°, 40.5°, 0°).

[0014] Furthermore, the central angles corresponding to the arc-shaped portion on the first bus bar and the arc-shaped portion on the second bus bar are both within a range of 10 to 240°.

[0015] Furthermore, the central angles corresponding to the arc-shaped portion on the first bus bar and the arc-shaped portion on the second bus bar are both within a range of 20 to 90 degrees.

[0016] Further, the material of the temperature compensation layer is silicon dioxide, and when the wavelength of the sound wave excited by the temperature compensation resonator is λ, the thickness of the temperature compensation layer is 0.03λ.

[0017] Furthermore, the thickness of the first thickened layer and the second thickened layer are both in the range of 40 to 90 nm.

[0018] Furthermore, the thickness of the first thickened layer and the second thickened layer are both 70 nm.

[0019] Furthermore, when the wavelength of the sound wave excited by the temperature compensation resonator is λ, the lengths of the first thickened layer and the second thickened layer are both in the range of 0.25λ to 2λ.

[0020] Further, when the wavelength of the sound wave excited by the temperature compensation resonator is λ, the lengths of the first thickened layer and the second thickened layer are both λ / 2.

[0021] Further, when the distance from the end of the first interdigital electrode to the second bus bar is set as a first gap and the distance from the end of the second interdigital electrode to the first bus bar is set as a second gap, the sizes of the first gap and the second gap are both within the range of 0 to 2λ.

[0022] Furthermore, the temperature compensation layer is also covered with a frequency adjustment layer, and the frequency adjustment layer is one or more of silicon nitride, silicon dioxide, aluminum nitride, and silicon carbide.

[0023] The manufacturing method of the temperature compensation resonator involved in the present invention comprises: a piezoelectric substrate layer forming step, forming a piezoelectric substrate layer; a first bus bar and a second bus bar forming step, forming the first bus bar and the second bus bar on the piezoelectric substrate layer in a manner parallel to each other; a first interdigitated electrode forming step, forming a plurality of first interdigitated electrodes on the first bus bar in a manner extending toward one side of the second bus bar; a second interdigitated electrode forming step, forming a plurality of second interdigitated electrodes on the second bus bar in a manner extending toward between adjacent first interdigitated electrodes; a first thickening layer forming step, thickening the end portions of the plurality of first interdigitated electrodes on the side away from the first bus bar to form a plurality of the first thickening layers, and thickening the end portions of the plurality of second interdigitated electrodes on the side away from the second bus bar to form A plurality of first thickened layers; a second thickened layer forming step, thickening the portions of the plurality of first interdigitated electrodes that are flush with the ends of adjacent second interdigitated electrodes to form the plurality of second thickened layers, and thickening the portions of the plurality of second interdigitated electrodes that are flush with the ends of adjacent first interdigitated electrodes to form the plurality of second thickened layers; and a temperature compensation layer forming step, covering the temperature compensation layer over the piezoelectric substrate layer, the first bus bar, the second bus bar, the first interdigitated electrodes and the second interdigitated electrodes, in the first bus bar and second bus bar forming step, on the first bus bar, the bus bar areas between adjacent first interdigitated electrodes are formed into arc shapes, and on the second bus bar, the bus bar areas between adjacent second interdigitated electrodes are formed into arc shapes.

[0024] Furthermore, in the piezoelectric base layer forming step, the piezoelectric base layer is formed of lithium niobate.

[0025] Furthermore, in the first interdigitated electrode forming step, the second interdigitated electrode forming step, the second thickened layer forming step and the second thickened layer forming step, the material of the first interdigitated electrode and the second interdigitated electrode is the same as the material of the first thickened layer and the second thickened layer, which are one or more of aluminum, copper and platinum.

[0026] Furthermore, in the step of forming the piezoelectric substrate layer, the cutting angle of the piezoelectric substrate layer is formed to be 130°±5°, and the corresponding Euler angle is (0°, 40.5°±5°, 0°).

[0027] Furthermore, in the step of forming the piezoelectric substrate layer, the cutting angle of the piezoelectric substrate layer is formed to be 130.5°, and the corresponding Euler angle is (0°, 40.5°, 0°).

[0028] Furthermore, in the step of forming the first bus bar and the second bus bar, the central angles of the arc-shaped portion on the first bus bar and the arc-shaped portion on the second bus bar are both formed within a range of 10 to 240°.

[0029] Furthermore, in the step of forming the first bus bar and the second bus bar, the central angles of the arc-shaped portion on the first bus bar and the arc-shaped portion on the second bus bar are both formed within a range of 20 to 90 degrees.

[0030] Furthermore, in the temperature compensation layer forming step, the temperature compensation layer is formed of silicon dioxide, and when the wavelength of the acoustic wave excited by the temperature compensation type resonator is λ, the thickness of the temperature compensation layer is formed to be 0.03λ.

[0031] Further, in the first thickened layer forming step and the second thickened layer forming step, the thickness of the first thickened layer and the second thickened layer are both in the range of 40 to 90 nm.

[0032] Further, in the first thickened layer forming step and the second thickened layer forming step, the thickness of the first thickened layer and the second thickened layer are both 70 nm.

[0033] Furthermore, when the wavelength of the sound wave excited by the temperature compensation resonator is λ, the lengths of the first thickened layer and the second thickened layer are both in the range of 0.25λ to 2λ.

[0034] Further, when the wavelength of the sound wave excited by the temperature compensation resonator is λ, the lengths of the first thickened layer and the second thickened layer are both λ / 2.

[0035] Further, when the distance from the end of the first interdigital electrode to the second bus bar is set as a first gap and the distance from the end of the second interdigital electrode to the first bus bar is set as a second gap, the sizes of the first gap and the second gap are both within the range of 0 to 2λ.

[0036] Furthermore, the method further comprises a frequency adjustment layer forming step, wherein the frequency adjustment layer is covered on the temperature compensation layer, and the frequency adjustment layer is one or more of silicon nitride, silicon dioxide, aluminum nitride, and silicon carbide.

[0037] Effects of the Invention

[0038] Firstly, in the temperature-compensated resonator and its manufacturing method involved in the present invention, the traditional end piston method is not adopted. Only the ends of the interdigital electrodes are thickened without widening the ends of the interdigital electrodes. Therefore, short circuits between the interdigital electrodes can be avoided.

[0039] Secondly, compared with the bending resonator structure and weighting method in the prior art, the temperature compensation resonator and the manufacturing method thereof involved in the present invention will not cause the size of the device to increase, and therefore, it is conducive to the miniaturization design of the device.

[0040] Finally, in the temperature-compensated resonator and its manufacturing method involved in the present invention, by adopting a method of combining the local arc-shaped bus bar and the thickening treatment of the interdigital electrode, the design of the temperature-compensated resonator is made more flexible, which can not only completely eliminate the spurious response of the temperature-compensated resonator, but also ensure that the temperature-compensated resonator has a higher Q value. BRIEF DESCRIPTION OF THE DRAWINGS

[0041] Figure 1 1 is a top cross-sectional view showing the structure of a temperature-compensated resonator according to the present invention.

[0042] Figure 2 It shows that from Figure 1 The diagram is a side cross-sectional view of the structure of the temperature-compensated resonator according to the present invention as viewed from the direction of the dashed line AA.

[0043] Figure 3 1 is a diagram showing the admittance curves that can be obtained by using different schemes in the temperature compensation resonator involved in the present invention when a piezoelectric substrate layer of 130.5°YX lithium niobate is used, wherein: Figure 3 (a) is a diagram showing the admittance curve that can be obtained when only the interdigital electrode thickening process is used, Figure 3 (b) is a diagram showing the admittance curve that can be obtained when only partially arc-shaped bus bars are used, Figure 3 (c) is a diagram showing the admittance curve that can be obtained when both the interdigital electrode thickening process and the partially arc-shaped bus bar are used.

[0044] Figure 4 1 is a diagram showing the admittance curves that can be obtained by using different schemes in the temperature compensation resonator involved in the present invention when a piezoelectric substrate layer of 128° YX lithium niobate is used, wherein: Figure 4 (a) is a diagram showing the admittance curve that can be obtained when only the interdigital electrode thickening process is used, Figure 4 (b) is a diagram showing the admittance curve that can be obtained when only partially arc-shaped bus bars are used, Figure 4(c) is a diagram showing the admittance curve that can be obtained when both the interdigital electrode thickening process and the partially arc-shaped bus bar are used.

[0045] Figure 5 1 is a diagram showing the admittance curves that can be obtained when the distances from the ends of the interdigital electrodes to the bus bar are different in the case of using a 130.5° YX lithium niobate piezoelectric substrate layer in the temperature compensation type resonator of the present invention, wherein: Figure 5 (a) is a diagram showing the admittance curve that can be obtained when the distance from the end of the interdigital electrode to the bus bar is 1.6 μm. Figure 5 (b) is a graph showing an admittance curve that can be obtained when the distance from the end of the interdigital electrode to the bus bar is 0.588 um.

[0046] Figure 6 is a diagram showing the admittance curves that can be obtained when the central angles of the arc-shaped portions on the busbars are different in the case of using a 130.5° YX lithium niobate piezoelectric substrate in the temperature compensation type resonator according to the present invention, Figure 6 (a) is a diagram showing the admittance curve that can be obtained when the central angle is 10°, Figure 6 (b) is a diagram showing the admittance curve that can be obtained when the central angle is 40°, Figure 6 (c) is a diagram showing the admittance curve that can be obtained when the central angle is 80°, Figure 6 (d) is a diagram showing the admittance curve that can be obtained when the central angle is 180°, Figure 6 (e) is a diagram showing the admittance curve that can be obtained when the central angle is 210°, Figure 6 (f) is a graph showing an admittance curve that can be obtained when the central angle is 240°.

[0047] Figure 7 1 is a diagram showing the admittance curves that can be obtained when the thickness of the thickened layer is different in the case of using a 130.5° YX lithium niobate piezoelectric substrate layer in the temperature compensation type resonator involved in the present invention, wherein: Figure 7 (a) is a diagram showing the admittance curve that can be obtained when the thickness of the thickened layer is 40 nm, Figure 7 (b) is a diagram showing the admittance curve that can be obtained when the thickness of the thickened layer is 50 nm. Figure 7 (c) is a graph showing the admittance curve that can be obtained when the thickness of the thickened layer is 70 nm. Figure 7 (d) is a graph showing an admittance curve that can be obtained when the thickness of the thickened layer is 90 nm.

[0048] Figure 8It is a top view showing a simplified structure of a resonator obtained by using a method of thickening and widening the ends of interdigital electrodes in the prior art.

[0049] Fig. 9 FIG. 1 is a top view showing a schematic structure of a resonator obtained by using a method of bending a resonator in the prior art. DETAILED DESCRIPTION

[0050] The temperature compensation resonator and the manufacturing method thereof involved in the present invention are further described in detail below through specific implementation methods and in combination with the accompanying drawings. Moreover, the following description of the implementation methods of the present invention with reference to the accompanying drawings is intended to explain the overall inventive concept of the present invention and should not be construed as a limitation of the present invention.

[0051] In addition, in the following description, the same or similar parts are marked with the same or similar figure numbers. It should be noted that the drawings are only schematic diagrams, and the relationship between thickness and plane size, the ratio of thickness of each layer, etc. are different from the actual situation. Therefore, the specific thickness or size should be judged by referring to the following description.

[0052] Furthermore, in the description of the present invention, it should be noted that the directions or positional relationships indicated by terms such as “upper”, “lower”, “front”, “backward”, “left” and “right” are based on the directions or positional relationships shown in the accompanying drawings. They are merely simplified descriptions for the convenience of describing the present invention. They do not indicate or imply that the device referred to must have a specific direction, be constructed and operated in a specific direction. Therefore, they cannot be understood as a limitation on the present invention.

[0053] [Structure of Temperature Compensation Resonator 10]

[0054] Below, refer to Figure 1 to Figure 2 , the structure of the temperature-compensated resonator 10 according to the present invention will be described in detail.

[0055] Figure 1 1 is a plan cross-sectional view showing the structure of a temperature-compensated resonator 10 according to the present invention. Figure 2 It shows that from Figure 1 The diagram is a side cross-sectional view of the structure of the temperature-compensated resonator 10 according to the present invention as viewed from the direction of the dashed line AA.

[0056] like Figure 1 to Figure 2 As shown, the temperature compensated resonator 10 includes: a piezoelectric substrate layer 1, a plurality of first bus bars 2a and a plurality of second bus bars 2b, a plurality of first interdigital electrodes 3a and a plurality of second interdigital electrodes 3b, a plurality of first thickened layers 4a and a plurality of second thickened layers 4b, and a temperature compensation layer 5.

[0057] Specifically, if Figure 2 As shown, when the temperature-compensated resonator 10 is observed from a side view, a piezoelectric substrate layer 1, a first interdigitated electrode 3a and a second interdigitated electrode 3b, a first thickened layer 4a and a second thickened layer 4b, and a temperature compensation layer 5 are sequentially formed from bottom to top in the figure.

[0058] In addition, in the temperature-compensated resonator 10 of the present invention, the piezoelectric crystal material constituting the piezoelectric base layer 1 may be one or more of aluminum, copper, and platinum. In the present invention, copper is used as an example for explanation.

[0059] In addition, in the temperature compensation type resonator 10 involved in the present invention, the material constituting the first interdigital electrode 3a and the second interdigital electrode 3b is the same as the material of the first thickened layer 4a and the second thickened layer 4b, which can be a quartz crystal, a lithium tantalate crystal, or a lithium niobate crystal. In the present invention, the lithium niobate crystal is used as an example for description.

[0060] In the temperature-compensated resonator 10 according to the present invention, the material constituting the temperature compensation layer 5 is generally silicon dioxide crystal. In the present invention, silicon dioxide crystal is used as an example for explanation.

[0061] First, if Figure 1 As shown, a first bus bar 2a and a second bus bar 2b are formed in parallel to each other on the surface of the piezoelectric substrate layer 1. Then, a plurality of first interdigital electrodes 3a are formed in parallel to each other from the first bus bar 2a in a manner extending toward the second bus bar 2b, and similarly, a plurality of second interdigital electrodes 3b are formed in parallel to each other from the second bus bar 2b in a manner extending toward the first bus bar 2a, wherein each of the plurality of second interdigital electrodes 2b is formed between two of the plurality of first interdigital electrodes 2a, so that the plurality of first interdigital electrodes 2a and the plurality of second interdigital electrodes 2b are formed in a shape similar to a cross of fingers.

[0062] Furthermore, if Figure 1 As shown in FIG. 1 , on the first bus bar 2a, the bus bar regions between adjacent first interdigital electrodes 3a are formed into arc shapes, and similarly, on the second bus bar 2b, the bus bar regions between adjacent second interdigital electrodes 3b are also formed into arc shapes. Figure 1 As shown, in the temperature-compensated resonator 10 of the present invention, the first bus bar 2a and the second bus bar 2b are not formed as a whole into an arc shape, but the bus bar area between adjacent first interdigitated electrodes 3a and the bus bar area between adjacent second interdigitated electrodes 3b are respectively formed into an arc shape.

[0063] Therefore, compared with the bending resonator structure and weighting method in the prior art, the temperature compensation resonator 10 involved in the present invention does not cause the size of the device to increase, and therefore is conducive to the miniaturization design of the device.

[0064] In addition, if Figure 1 As shown, the end portions of the plurality of first interdigitated electrodes 3a away from the first bus bar 2a are thickened to form a first thickened layer 4a, and the end portions of the second interdigitated electrodes 3b away from the second bus bar 2b are also thickened to form a first thickened layer 4a. Furthermore, the portions of the plurality of first interdigitated electrodes 3a that are flush with the ends of the adjacent second interdigitated electrodes 3b are thickened to form a second thickened layer 4b, and the portions of the plurality of second interdigitated electrodes 3b that are flush with the ends of the adjacent first interdigitated electrodes 3a are also thickened to form a second thickened layer 4b. Thus, as Figure 1 As shown, in the temperature compensation resonator 10 involved in the present invention, a first thickening layer 4a and a second thickening layer 4b are respectively formed on each of the multiple first interdigitated electrodes 3a, and a first thickening layer 4a and a second thickening layer 4b are also respectively formed on each of the multiple second interdigitated electrodes 3b.

[0065] Therefore, in the temperature compensation resonator 10 involved in the present invention, the traditional end piston method is not adopted. Only the ends of the interdigital electrodes are thickened without widening the ends of the interdigital electrodes. This can avoid short circuits between the interdigital electrodes.

[0066] Furthermore, considering the process error, in order to facilitate fine-tuning of the operating frequency, such as Figure 2 As shown, a frequency adjustment layer 6 may be further covered on the temperature compensation layer 5 , wherein the frequency adjustment layer 6 is one or more of silicon nitride, silicon dioxide, aluminum nitride, and silicon carbide.

[0067] For example, when the operating frequency is high, a frequency adjustment layer 6 made of silicon dioxide crystal can be covered on top of the temperature compensation layer 5 to lower the frequency, and when the operating frequency is low, a frequency adjustment layer 6 made of silicon nitride crystal can be covered on top of the temperature compensation layer 5 to increase the operating frequency.

[0068] Next, the cut angle γ of the piezoelectric substrate 1 and the corresponding Euler angle, the width α of the first interdigital electrode 3a and the second interdigital electrode 3b, the radius R of the arc-shaped portion on the first bus bar 2a and the second bus bar 2b and the corresponding central angle θ, the first gap L from the end of the first interdigital electrode 3a to the second bus bar 2b in the temperature compensation type resonator 10 of the present invention are described. gapand a second gap L from the end of the second interdigital electrode 3 b to the first bus bar 2 a. gap , the thickness h and length m of the first thickened layer 4a and the second thickened layer 4b, the thickness H of the temperature compensation layer 5, and the period p and aperture W of the temperature compensation type resonator 10, refer to Figure 1 to Figure 2 Provide specific instructions.

[0069] First, if Figure 1 As shown, in the temperature-compensated resonator 10 of the present invention, when the cutting angle of the piezoelectric base layer 1 is set to γ, it is preferred that the cutting angle γ of the piezoelectric base layer 1 is 130°±5°, and the corresponding Euler angle is (0°, 40.5°±5°, 0°). It is more preferred that the cutting angle γ of the piezoelectric base layer 1 is 130°, and the corresponding Euler angle is (0°, 40.5°, 0°).

[0070] Secondly, if Figure 1 As shown, in the temperature compensation type resonator 10 involved in the present invention, when the center angle of the arc-shaped portion on the first bus bar 2a and the second bus bar 2b is set to θ, it is preferred that the center angle θ corresponding to the arc-shaped portion on the first bus bar 2a and the arc-shaped portion on the second bus bar 2b are both within the range of 10 to 240°. It is more preferred that the center angle θ corresponding to the arc-shaped portion on the first bus bar 2a and the arc-shaped portion on the second bus bar 2b are both within the range of 20 to 90°.

[0071] In addition, if Figure 1 As shown, in the temperature compensation type resonator 10 involved in the present invention, when the lengths of the first thickened layer 4a and the second thickened layer 4b are set to m, if the wavelength of the sound wave excited by the temperature compensation type resonator 10 is set to λ, it is preferred that the lengths m of the first thickened layer 4a and the second thickened layer 4b are both within the range of 0.25λ to 2λ. It is more preferred that the lengths m of the first thickened layer 4a and the second thickened layer 4b are both λ / 2.

[0072] Furthermore, if Figure 1 As shown, in the temperature-compensated resonator 10 according to the present invention, the distance from the end of the first interdigital electrode 3a to the second bus bar 2b is set to the first gap L gap , and the distance from the end of the second interdigital electrode 3b to the first bus bar 2a is set to the second gap L gap In the case of gap and the second gap L gap The sizes are all in the range of 0 to 2λ.

[0073] Furthermore, if Figure 1 As shown, in the temperature compensation type resonator 10 of the present invention, for the first gap Lgap and the second gap L gap When the width of the first interdigital electrode 3a and the second interdigital electrode 3b is set to α, the period of the temperature compensation type resonator 10 is set to p, and the central angle of the arc-shaped portion on the first bus bar 2a and the second bus bar 2b is set to θ, it is more preferable that the first gap L gap and the second gap L gap The size of is calculated according to the following formula (1).

[0074]

[0075] Finally, if Figure 2 As shown, in the temperature compensation type resonator 10 involved in the present invention, when the thickness of the temperature compensation layer 5 is set to H, if the wavelength of the sound wave excited by the temperature compensation type resonator 10 is set to λ, it is preferred that the thickness H of the temperature compensation layer 5 is 0.03λ.

[0076] Likewise, if Figure 2 As shown, in the temperature compensation type resonator 10 involved in the present invention, when the thickness of the first thickened layer 4a and the second thickened layer 4b is set to h, it is preferred that the thickness h of the first thickened layer 4a and the second thickened layer 4b are both within the range of 40 to 90 nm. More preferably, the thickness h of the first thickened layer 4a and the second thickened layer 4b are both 70 nm.

[0077] [Examples 1 to 5 of the Structure of the Temperature Compensated Resonator 10]

[0078] Below, refer to Figures 3 to 7 , the structure of the temperature-compensated resonator 10 according to Embodiments 1 to 5 of the present invention will be described.

[0079] Example 1

[0080] Below, refer to Figure 3 Next, the structure of the temperature-compensated resonator 10 according to the first embodiment of the present invention will be described. Figure 3 1 is a diagram showing the admittance curves that can be obtained by using different schemes in the temperature compensation type resonator 10 of the present invention when using the piezoelectric substrate layer 1 of 130.5°YX lithium niobate, wherein: Figure 3 (a) is a diagram showing the admittance curve that can be obtained when only the interdigital electrode thickening process is used, Figure 3 (b) is a diagram showing the admittance curve that can be obtained when only partially arc-shaped bus bars are used, Figure 3 (c) is a diagram showing the admittance curve that can be obtained when both the interdigital electrode thickening process and the partially arc-shaped bus bar are used.

[0081] In the present embodiment 1, it is assumed that the piezoelectric substrate 1 is made of YX lithium niobate material with a cutting angle γ of 130.5°, the central angle θ corresponding to the arc-shaped portion on the first bus bar 2a and the second bus bar 2b is 20°, the first thickened layer 4a and the second thickened layer 4b are made of copper material, and the thickness h thereof is 70 nm, and the first gap L gap and the second gap L gap The size of is 1.6 um, and the temperature compensation layer 5 is made of silicon dioxide.

[0082] exist Figure 3 (a) Figure 3 (b) Figure 3 (c) shows the admittance curves that can be obtained when only the fork-finger electrode thickening treatment is used, the admittance curve that can be obtained when only the local arc-shaped bus bar is used, and the admittance curve that can be obtained when both the fork-finger electrode thickening treatment and the local arc-shaped bus bar are used. Obviously, only when both the fork-finger electrode thickening treatment and the local arc-shaped bus bar are used at the same time can the spurious response of the temperature-compensated resonator 10 be completely eliminated and its higher Q value be ensured.

[0083] Example 2

[0084] Below, refer to Figure 4 Next, the structure of the temperature-compensated resonator 10 according to the second embodiment of the present invention will be described. Figure 4 1 is a diagram showing the admittance curves that can be obtained by using different schemes in the temperature compensation type resonator 10 of the present invention when the piezoelectric substrate layer 1 of 128° YX lithium niobate is used, wherein: Figure 4 (a) is a diagram showing the admittance curve that can be obtained when only the interdigital electrode thickening process is used, Figure 4 (b) is a diagram showing the admittance curve that can be obtained when only partially arc-shaped bus bars are used, Figure 4 (c) is a diagram showing the admittance curve that can be obtained when both the interdigital electrode thickening process and the partially arc-shaped bus bar are used.

[0085] In the present embodiment 2, as a premise, the piezoelectric substrate 1 is made of YX lithium niobate material with a cutting angle γ of 128°, and the central angle θ corresponding to the arc-shaped portion on the first bus bar 2a and the second bus bar 2b is 20°, the thickness h of the first thickened layer 4a and the second thickened layer 4b is 70nm, and the first gap L gap and the second gap L gap The size is 1.6um.

[0086] exist Figure 4 (a) Figure 4 (b) Figure 4(c) shows the admittance curves that can be obtained when only the fork-finger electrode thickening treatment is used, the admittance curve that can be obtained when only the local arc-shaped bus bar is used, and the admittance curve that can be obtained when both the fork-finger electrode thickening treatment and the local arc-shaped bus bar are used. Obviously, only when both the fork-finger electrode thickening treatment and the local arc-shaped bus bar are used at the same time can the spurious response of the temperature-compensated resonator 10 be completely eliminated and its higher Q value be ensured.

[0087] Example 3

[0088] Below, refer to Figure 5 Next, the structure of the temperature-compensated resonator 10 according to the third embodiment of the present invention will be described. Figure 5 1 is a diagram showing the admittance curves that can be obtained when the distances from the ends of the interdigital electrodes to the bus bar are different in the case of using the piezoelectric substrate layer 1 of 130.5° YX lithium niobate in the temperature compensation type resonator 10 of the present invention, wherein: Figure 5 (a) is a diagram showing the admittance curve that can be obtained when the distance from the end of the interdigital electrode to the bus bar is 1.6 μm. Figure 5 (b) is a graph showing an admittance curve that can be obtained when the distance from the end of the interdigital electrode to the bus bar is 0.588 um.

[0089] In the present embodiment 3, as a premise, the piezoelectric substrate 1 is made of YX lithium niobate material with a cutting angle γ of 130.5°, and the central angle θ corresponding to the arc-shaped portion on the first bus bar 2a and the second bus bar 2b is 225°, the thickness h of the first thickened layer 4a and the second thickened layer 4b is 70nm, and the first gap L gap and the second gap L gap The size is calculated according to the above formula (1) to be 0.588um.

[0090] By comparison Figure 5 (a) and Figure 5 (b) It can be seen that when the central angle θ corresponding to the arc-shaped portion on the first bus bar 2a and the second bus bar 2b is large, the first gap L should be appropriately reduced. gap and the second gap L gap The size of can ensure that the spurious response of the temperature compensated resonator 10 can be completely eliminated.

[0091] Example 4

[0092] Below, refer to Figure 6 Next, the structure of the temperature-compensated resonator 10 according to the fourth embodiment of the present invention will be described. Figure 6is a diagram showing the admittance curves that can be obtained when the central angles of the arc-shaped portions on the busbars are different in the case of using the piezoelectric substrate layer 1 of 130.5° YX lithium niobate in the temperature compensation type resonator 10 of the present invention, Figure 6 (a) is a diagram showing the admittance curve that can be obtained when the central angle is 10°, Figure 6 (b) is a diagram showing the admittance curve that can be obtained when the central angle is 40°, Figure 6 (c) is a diagram showing the admittance curve that can be obtained when the central angle is 80°, Figure 6 (d) is a diagram showing the admittance curve that can be obtained when the central angle is 180°, Figure 6 (e) is a diagram showing the admittance curve that can be obtained when the central angle is 210°, Figure 6 (f) is a graph showing the admittance curve that can be obtained when the central angle is 240°.

[0093] In the present embodiment 4, as a premise, the piezoelectric substrate 1 is made of YX lithium niobate material with a cutting angle γ of 130.5°, and the central angles θ corresponding to the arc-shaped parts on the first bus bar 2a and the second bus bar 2b are 10°, 40°, 80°, 180°, 210°, and 240°, respectively, the thickness h of the first thickened layer 4a and the second thickened layer 4b is 70nm, and the first gap L gap and the second gap L gap The size of is calculated according to the above formula (1).

[0094] like Figure 6 (a) Figure 6 (b) Figure 6 (c) Figure 6 (d) Figure 6 (e) Figure 6 As shown in (f), the technical solution adopted in Example 4 of the present invention can effectively suppress the stray response of the temperature compensation type resonator 10, and because the central angle θ corresponding to the arc-shaped parts on the first bus bar 2a and the second bus bar 2b can be adjusted in a large range, it is also helpful to improve the design flexibility and process adaptability of the temperature compensation type resonator 10.

[0095] Example 5

[0096] Below, refer to Figure 7 Next, the structure of the temperature-compensated resonator 10 according to the fifth embodiment of the present invention will be described. Figure 7 1 is a diagram showing the admittance curves that can be obtained when the thickness of the thickened layer is different in the case of using the piezoelectric substrate layer 1 of 130.5° YX lithium niobate in the temperature compensation type resonator 10 of the present invention, wherein: Figure 7(a) is a diagram showing the admittance curve that can be obtained when the thickness of the thickened layer is 40 nm, Figure 7 (b) is a diagram showing the admittance curve that can be obtained when the thickness of the thickened layer is 50 nm. Figure 7 (c) is a graph showing the admittance curve that can be obtained when the thickness of the thickened layer is 70 nm. Figure 7 (d) is a graph showing an admittance curve that can be obtained when the thickness of the thickened layer is 90 nm.

[0097] In the present embodiment 5, as a premise, the piezoelectric substrate 1 is made of YX lithium niobate material with a cutting angle γ of 130.5°, and the central angle θ corresponding to the arc-shaped parts on the first bus bar 2a and the second bus bar 2b is 20°, the thickness h of the first thickened layer 4a and the second thickened layer 4b are 40nm, 50nm, 70nm, and 90nm respectively, and the first gap L gap and the second gap L gap The size is 1.6um.

[0098] By comparison Figure 7 (a) Figure 7 (b) Figure 7 (c) with Figure 7 (d) It can be seen that the technical solution adopted in Example 5 of the present invention can effectively suppress the stray response of the temperature compensation type resonator 10, and because the thickness h of the first thickened layer 4a and the second thickened layer 4b can be adjusted in a large range, it is also helpful to improve the design flexibility and process adaptability of the temperature compensation type resonator 10.

[0099] As described above, the temperature-compensated resonator 10 involved in embodiments 1-5 of the present invention makes the design of the temperature-compensated resonator 10 more flexible by adopting a method of combining local arc-shaped bus bars and interdigital electrode thickening treatment, which can not only completely eliminate the stray response of the temperature-compensated resonator 10, but also ensure that the temperature-compensated resonator 10 has a higher Q value.

[0100] [Method of Manufacturing Temperature Compensated Resonator 10]

[0101] Below, refer to Figure 1 to Figure 2 , a method for manufacturing the temperature-compensated resonator 10 according to the present invention will be described in detail.

[0102] like Figure 1 to Figure 2As shown, the manufacturing method of the temperature compensation type resonator 10 involved in the present invention includes: a piezoelectric substrate layer forming step, forming a piezoelectric substrate layer 1; a first bus bar and a second bus bar forming step, forming a first bus bar 2a and a second bus bar 2b on the piezoelectric substrate 1 in a manner parallel to each other; a first interdigital electrode forming step, forming a plurality of first interdigital electrodes 3a on the first bus bar 2a in a manner extending toward the second bus bar 2b; a second interdigital electrode forming step, forming a plurality of second interdigital electrodes 3b on the second bus bar 2b in a manner extending toward between adjacent first interdigital electrodes 3a; a first thickening layer forming step, thickening the end portions of the plurality of first interdigital electrodes 3a on the side away from the first bus bar 2a to form a plurality of first thickening layers 4a, and thickening the end portions of the plurality of second interdigital electrodes 3b on the side away from the second bus bar 2b Processing to form multiple first thickened layers 4a; a second thickened layer forming step, thickening the parts on the multiple first interdigitated electrodes 3a that are flush with the ends of the adjacent second interdigitated electrodes 3b to form multiple second thickened layers 4b, and thickening the parts on the multiple second interdigitated electrodes 3b that are flush with the ends of the adjacent first interdigitated electrodes 3a to form multiple second thickened layers 4b; and a temperature compensation layer forming step, covering the temperature compensation layer 5 above the piezoelectric substrate layer 1, the first bus bar 2a, the second bus bar 2b, the first interdigitated electrodes 3a and the second interdigitated electrodes 3b, in the first bus bar and the second bus bar forming steps, the bus bar areas between the adjacent first interdigitated electrodes 3a on the first bus bar 2a are all formed into arc shapes, and the bus bar areas between the adjacent second interdigitated electrodes 3b on the second bus bar 2b are all formed into arc shapes.

[0103] Furthermore, in the method for manufacturing the temperature-compensated resonator 10 according to the present invention, the cutting angle γ of the piezoelectric substrate 1 and the corresponding Euler angle, the width α of the first interdigital electrode 3a and the second interdigital electrode 3b, the radius R of the arc-shaped portion on the first bus bar 2a and the second bus bar 2b and the corresponding central angle θ, the first gap L from the end of the first interdigital electrode 3a to the second bus bar 2b, gap and a second gap L from the end of the second interdigital electrode 3 b to the first bus bar 2 a. gap The thickness h and length m of the first thickened layer 4a and the second thickened layer 4b, the thickness H of the temperature compensation layer 5, and the period p and aperture W of the temperature compensation type resonator 10 are the same as those described in the above [Structure of the temperature compensation type resonator 10], and therefore, the description is omitted here.

[0104] In summary, in the manufacturing method of the temperature compensated resonator 10 involved in the present invention, compared with the bending resonator structure and weighting method in the prior art, the temperature compensated resonator 10 involved in the present invention will not cause the device size to increase, and therefore is conducive to the miniaturization design of the device.

[0105] Moreover, in the manufacturing method of the temperature-compensated resonator 10 involved in the present invention, the traditional end piston method is not adopted. Only the ends of the interdigital electrodes are thickened, and there is no need to widen the ends of the interdigital electrodes. Therefore, short circuits between the interdigital electrodes can be avoided.

[0106] Finally, in the manufacturing method of the temperature-compensated resonator 10 involved in the present invention, by combining the local arc-shaped bus bar and the interdigital electrode thickening treatment, the design of the temperature-compensated resonator 10 is made more flexible, which can not only completely eliminate the stray response of the temperature-compensated resonator 10, but also ensure that the temperature-compensated resonator 10 has a higher Q value.

[0107] Although the present application describes various exemplary embodiments and examples, various features, methods, and functions described in one or more embodiments are not limited to application in specific embodiments and may be applied to the embodiments alone or in various combinations.

[0108] Therefore, it is considered that numerous modifications not shown in the examples are also included in the technical scope disclosed in the present specification, for example, including the case where at least one component is modified, added or omitted, and the case where at least one component is extracted and combined with components of other embodiments.

[0109] Industrial Applicability

[0110] The temperature-compensated resonator and the manufacturing method thereof involved in the present invention are widely used in the field of radio frequency front-end filters.

[0111] Description of symbols

[0112] 10 Temperature compensated resonator,

[0113] 1 Piezoelectric substrate layer,

[0114] 2a First busbar,

[0115] 2b Second bus bar,

[0116] 3a The first interdigitated electrode,

[0117] 3b The second interdigitated electrode,

[0118] 4a The first thickening layer,

[0119] 4b The second thickening layer,

[0120] 5 Temperature compensation layer,

[0121] 6 frequency adjustment layer,

[0122] α is the width of the first interdigital electrode 3a and the second interdigital electrode 3b,

[0123] γ is the cutting angle of the piezoelectric substrate layer 1,

[0124] θ The central angle of the arc-shaped portion on the first bus bar 2a and the second bus bar 2b,

[0125] R is the radius of the arc-shaped portion on the first bus bar 2a and the second bus bar 2b,

[0126] L gap First gap, second gap,

[0127] p is the period of the temperature-compensated resonator 10,

[0128] W is the aperture of the temperature-compensated resonator 10,

[0129] H is the thickness of the temperature compensation layer 5,

[0130] h the thickness of the first thickened layer 4a and the second thickened layer 4b,

[0131] m The length of the first thickened layer 4a and the second thickened layer 4b.

Claims

1. A temperature-compensated resonator, characterized in that: have: Piezoelectric substrate layer; a first bus bar and a second bus bar, wherein the first bus bar and the second bus bar are formed on the piezoelectric substrate layer in parallel with each other; A plurality of first interdigital electrodes, wherein the plurality of first interdigital electrodes are formed on the first bus bar in a manner of extending toward one side of the second bus bar; a plurality of second interdigital electrodes, wherein the plurality of second interdigital electrodes are formed on the second bus bar in a manner of extending toward between adjacent first interdigital electrodes; A plurality of first thickened layers, wherein the plurality of first thickened layers are formed on ends of the plurality of first interdigitated electrodes away from the first bus bar, and on ends of the plurality of second interdigitated electrodes away from the second bus bar; A plurality of second thickened layers, wherein the plurality of second thickened layers are formed on the plurality of first interdigital electrodes at locations flush with ends of adjacent second interdigital electrodes, and on the plurality of second interdigital electrodes at locations flush with ends of adjacent first interdigital electrodes; as well as a temperature compensation layer, the temperature compensation layer covering the piezoelectric substrate layer, the first bus bar, the second bus bar, the first interdigital electrode and the second interdigital electrode, The bus bar regions between the adjacent first interdigitated electrodes on the first bus bar are all arc-shaped, and the bus bar regions between the adjacent second interdigitated electrodes on the second bus bar are all arc-shaped.

2. The temperature compensated resonator according to claim 1, characterized in that: The material of the piezoelectric substrate layer is lithium niobate.

3. The temperature compensated resonator according to claim 1, wherein: The material of the first interdigital electrode and the second interdigital electrode is the same as that of the first thickened layer and the second thickened layer, which are one or more of aluminum, copper, and platinum.

4. The temperature compensated resonator according to claim 1, wherein: The cutting angle of the piezoelectric substrate layer is 130°±5°, and the corresponding Euler angle is (0°, 40.5°±5°, 0°).

5. The temperature compensated resonator according to claim 4, characterized in that: The cutting angle of the piezoelectric substrate layer is 130.5°, and the corresponding Euler angle is (0°, 40.5°, 0°).

6. The temperature compensated resonator according to claim 1, wherein: The central angles of the arc-shaped portion on the first bus bar and the arc-shaped portion on the second bus bar are both within a range of 10 to 240 degrees.

7. The temperature compensated resonator according to claim 6, characterized in that: The central angles of the arc-shaped portion on the first bus bar and the arc-shaped portion on the second bus bar are both within a range of 20 to 90 degrees.

8. The temperature compensated resonator according to claim 1, wherein: The material of the temperature compensation layer is silicon dioxide, and when the wavelength of the sound wave excited by the temperature compensation resonator is λ, the thickness of the temperature compensation layer is 0.03λ.

9. The temperature compensated resonator according to claim 1, wherein: The thickness of the first thickened layer and the second thickened layer are both in the range of 40 to 90 nm.

10. The temperature compensated resonator according to claim 9, characterized in that: The thickness of the first thickened layer and the second thickened layer are both 70 nm.

11. The temperature compensated resonator according to claim 1, wherein: When the wavelength of the sound wave excited by the temperature compensation resonator is λ, the lengths of the first thickened layer and the second thickened layer are both in the range of 0.25λ to 2λ.

12. The temperature compensated resonator according to claim 11, characterized in that: When the wavelength of the acoustic wave excited by the temperature compensation resonator is λ, the lengths of the first thickened layer and the second thickened layer are both λ / 2.

13. The temperature compensated resonator according to claim 1, wherein: When the distance from the end of the first interdigital electrode to the second bus bar is set as a first gap and the distance from the end of the second interdigital electrode to the first bus bar is set as a second gap, the sizes of the first gap and the second gap are both within the range of 0 to 2λ.

14. The temperature-compensated resonator according to any one of claims 1 to 13, characterized in that: The temperature compensation layer is also covered with a frequency adjustment layer, and the frequency adjustment layer is one or more of silicon nitride, silicon dioxide, aluminum nitride, and silicon carbide.

15. A method for manufacturing a temperature-compensated resonator, characterized in that: include: a piezoelectric substrate layer forming step of forming a piezoelectric substrate layer; a first bus bar and a second bus bar forming step of forming the first bus bar and the second bus bar on the piezoelectric substrate layer in parallel with each other; a first interdigital electrode forming step, forming a plurality of first interdigital electrodes on the first bus bar in a manner extending toward one side of the second bus bar; a second interdigital electrode forming step of forming a plurality of second interdigital electrodes on the second bus bar in a manner extending toward between adjacent first interdigital electrodes; A first thickening layer forming step, performing a thickening process on ends of a plurality of first interdigital electrodes away from the first bus bar to form a plurality of first thickening layers, and performing a thickening process on ends of a plurality of second interdigital electrodes away from the second bus bar to form a plurality of first thickening layers; a second thickening layer forming step, performing a thickening process on the portions of the plurality of first interdigital electrodes that are flush with the ends of the adjacent second interdigital electrodes to form the plurality of second thickening layers, and performing a thickening process on the portions of the plurality of second interdigital electrodes that are flush with the ends of the adjacent first interdigital electrodes to form the plurality of second thickening layers; as well as a temperature compensation layer forming step, covering the temperature compensation layer above the piezoelectric substrate layer, the first bus bar, the second bus bar, the first interdigital electrode and the second interdigital electrode, In the first bus bar and second bus bar forming steps, bus bar regions between adjacent first interdigital electrodes on the first bus bar are formed into arc shapes, and bus bar regions between adjacent second interdigital electrodes on the second bus bar are formed into arc shapes.

16. The method for manufacturing a temperature compensated resonator according to claim 15, wherein: In the piezoelectric base layer forming step, the piezoelectric base layer is formed of lithium niobate.

17. The method for manufacturing a temperature compensated resonator according to claim 15, wherein: In the first interdigitated electrode forming step, the second interdigitated electrode forming step, the first thickened layer forming step and the second thickened layer forming step, the material of the first interdigitated electrode and the second interdigitated electrode is the same as the material of the first thickened layer and the second thickened layer, which are one or more of aluminum, copper and platinum.

18. The method for manufacturing a temperature compensated resonator according to claim 16, wherein: In the step of forming the piezoelectric substrate layer, the cutting angle of the piezoelectric substrate layer is formed to be 130°±5°, and the corresponding Euler angle is (0°, 40.5°±5°, 0°).

19. The method for manufacturing a temperature compensated resonator according to claim 18, wherein: In the step of forming the piezoelectric base layer, the cutting angle of the piezoelectric base layer is formed to be 130.5°, and the corresponding Euler angle is (0°, 40.5°, 0°).

20. The method for manufacturing a temperature-compensated resonator according to claim 15, wherein: In the step of forming the first bus bar and the second bus bar, the central angles of the arc-shaped portion on the first bus bar and the arc-shaped portion on the second bus bar are both formed within a range of 10 to 240°.

21. The method for manufacturing a temperature-compensated resonator according to claim 20, wherein: In the step of forming the first bus bar and the second bus bar, the central angles of the arc-shaped portion on the first bus bar and the arc-shaped portion on the second bus bar are both formed within a range of 20 to 90 degrees.

22. The method for manufacturing a temperature compensated resonator according to claim 15, wherein: In the temperature compensation layer forming step, the temperature compensation layer is made of silicon dioxide, and when the wavelength of an acoustic wave excited by the temperature compensation type resonator is λ, the thickness of the temperature compensation layer is formed to be 0.03λ.

23. The method for manufacturing a temperature-compensated resonator according to claim 15, wherein: In the first thickened layer forming step and the second thickened layer forming step, the thickness of the first thickened layer and the second thickened layer are both in the range of 40 to 90 nm.

24. The method for manufacturing a temperature compensated resonator according to claim 23, wherein: In the first thickened layer forming step and the second thickened layer forming step, the thickness of the first thickened layer and the second thickened layer are both 70 nm.

25. The method for manufacturing a temperature-compensated resonator according to claim 15, wherein: When the wavelength of the sound wave excited by the temperature compensation resonator is λ, the lengths of the first thickened layer and the second thickened layer are both in the range of 0.25λ to 2λ.

26. The method for manufacturing a temperature-compensated resonator according to claim 25, wherein: When the wavelength of the acoustic wave excited by the temperature compensation resonator is λ, the lengths of the first thickened layer and the second thickened layer are both λ / 2.

27. The method for manufacturing a temperature-compensated resonator according to claim 15, wherein: When the distance from the end of the first interdigital electrode to the second bus bar is set as a first gap and the distance from the end of the second interdigital electrode to the first bus bar is set as a second gap, the sizes of the first gap and the second gap are both within the range of 0 to 2λ.

28. The method for manufacturing a temperature-compensated resonator according to any one of claims 15 to 27, characterized in that: The method also includes a frequency adjustment layer forming step, in which the frequency adjustment layer is covered on the temperature compensation layer, and the frequency adjustment layer is one or more of silicon nitride, silicon dioxide, aluminum nitride, and silicon carbide.

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