A cadmium zinc telluride polycrystal synthesis apparatus and method

Abstract

The application discloses a kind of tellurium zinc cadmium polycrystal synthesis device and method thereof, specifically related to crystal preparation technical field, including installation base, the four corners of the upper surface of the installation base are all fixedly connected with support column, and the bottom of four support columns is fixedly connected with the four corners of the lower surface of installation top plate respectively, the inner wall of installation top plate is fixedly connected with the outer surface of fixed frame.The application is provided with heat preservation water tank, heating furnace, annular flow guide pipe and vacuum cover, the liquid in the heat preservation water tank is injected into the annular flow guide pipe by the water pump arranged in the heat preservation water tank, at the same time, the heat absorbed by the liquid is used to assist the temperature rise of the vacuum cover, so that the resources required for improving the temperature inside the vacuum cover are reduced, the consumption of resources during use of the synthesis device is effectively reduced, the cost of producing tellurium zinc cadmium is reduced, and the processing quality of tellurium zinc cadmium is guaranteed by the way of auxiliary temperature rise and temperature drop.

Description

Technical Field

[0001] This invention relates to the field of crystal preparation technology, and more specifically, to an apparatus and method for the synthesis of polycrystalline cadmium zinc telluride. Background Technology

[0002] Currently, large-area infrared focal plane array devices require larger-sized cadmium zinc telluride (CZT) single-crystal substrates. In the CdZnTe single-crystal preparation process, the successful synthesis of large-diameter polycrystalline materials is a key prerequisite for obtaining large-sized CZT single-crystal substrates. At present, the large-scale industrial synthesis of CZT often encounters the problem of quartz crucible explosions caused by violent chemical reactions, resulting in material oxidation and equipment damage, causing significant economic losses. Furthermore, rapid heating and cooling are required during the processing, but a large amount of heat resources are lost during the heat dissipation process, making it difficult to utilize the heat resources in subsequent CZT processing, and the heat dissipation efficiency is also affected. This not only has a certain impact on the environment, but also makes it difficult to ensure the processing efficiency of CZT, causing the processing quality of CZT to be reduced due to failure to cool down in time. Summary of the Invention

[0003] To overcome the aforementioned deficiencies of the prior art, the present invention provides a polycrystalline synthesis apparatus and method for zinc cadmium telluride. The technical problem to be solved by the present invention is that rapid heating and cooling are required during the processing and preparation process. However, a large amount of heat resources are lost during the heat dissipation process, making it difficult to utilize the heat resources in the subsequent processing of zinc cadmium telluride, and the heat dissipation efficiency is also affected. This not only has a certain impact on the environment, but also makes it difficult to ensure the processing efficiency of zinc cadmium telluride, resulting in the problem that the processing quality of zinc cadmium telluride is easily reduced due to failure to cool down in time.

[0004] To achieve the above objectives, the present invention provides the following technical solution: a polycrystalline synthesis device for zinc cadmium telluride, comprising a mounting base, wherein support columns are fixedly connected to the four corners of the upper surface of the mounting base, and the bottom ends of the four support columns are respectively fixedly connected to the four corners of the lower surface of a mounting top plate; the inner wall of the mounting top plate is fixedly connected to the outer surface of a fixing frame; a driving device is fixedly connected to the upper surface of the fixing frame; the top end of the bottom screw of the driving device is fixedly connected; the outer surface of the screw is sleeved in a bearing; the bearing is engaged with the lower surface of the fixing frame; and the outer surface of the screw is screwed... The system is connected by a lead screw and nut. The left and right sides of the lead screw and nut are fixedly connected to the opposite surfaces of two retainers, and telescopic rods are fixedly connected to the upper surfaces of both retainers. The top ends of the two telescopic rods are fixedly connected to the lower surfaces of the retainers. The bottom ends of the telescopic rods pass through the retainers and are fixedly connected to the upper surface of the heating furnace. The bottom end of the lead screw is fixedly connected to the upper surface of the growth furnace. The lower surface of the growth furnace is fixedly connected to the top end of an auxiliary rod. The bottom end of the auxiliary rod is clamped to the upper surface of the mounting base by a sleeve. A vacuum hood is fixedly connected to the upper surface of the mounting base.

[0005] As a further embodiment of the present invention: the fixing frame is configured as a cross shape, the telescopic rod is configured as a multi-section telescopic rod, the outer surface of the growth furnace is provided with a sealing door, and the lower surfaces of the two heating furnaces are fixedly connected to the same support frame.

[0006] As a further embodiment of the present invention: the outer surface of the vacuum shroud is provided with a plurality of annular guide tubes, and two corresponding annular guide tubes are connected by a connecting device. The outer surface of the upper annular guide tube is connected to one end of the back of the second conduit, and the other end of the second conduit is connected to the upper surface of the insulated water tank located in front.

[0007] As a further embodiment of the present invention: the number of insulated water tanks is two, and the lower surfaces of the two insulated water tanks are respectively fixedly connected to the upper surfaces of the two mounting plates. The opposite surfaces of the two mounting plates are respectively fixedly connected to the front and back of the mounting base. The outer surface of the insulated water tank located at the rear is connected to the annular guide pipe located below through a pipe. Suction cups are provided at the four corners of the lower surface of the mounting base, and a water pump is provided in both insulated water tanks.

[0008] As a further aspect of the present invention: the driving device includes a mounting frame, the lower surface of the mounting frame is fixedly connected to the upper surface of the fixed frame, the inner wall of the mounting frame is fixedly connected to the outer surface of the driving device, and the bottom end of the driving device is fixedly connected to the top end of the lead screw.

[0009] As a further aspect of the present invention: the connecting device includes two tees, and the two tees are respectively sleeved on the outer surfaces of the corresponding two annular guide tubes, and one end of the opposite face of the two tees is connected through a first conduit.

[0010] As a further aspect of the present invention: the vacuum shroud includes a sealing layer, the outer surface of the sealing layer is provided with a heat dissipation layer, the back sides of the sealing layer and the heat dissipation layer are fixedly connected to the upper surface of the mounting base, and the outer surface of the heat dissipation layer overlaps with the outer surface of the annular guide tube.

[0011] A synthesis method for a polycrystalline cadmium zinc telluride (CdZZ) synthesis apparatus, the synthesis method comprising the following steps:

[0012] S1. Weigh out three high-purity raw materials, Te, Cd, and Zn, according to the proportions, and load them into a carbon-coated quartz crucible from bottom to top.

[0013] S2. Place the seed crystal at the bottom of the crucible, fill an appropriate amount of solvent above the seed crystal, place the pre-synthesized polycrystalline material above the solvent zone, and compact the material in the solvent zone to prevent the dissolved polycrystalline material above from falling directly onto the surface of the seed crystal. Then install the crucible in the growth furnace.

[0014] S3. When the gas inside the vacuum chamber is extracted by an external vacuum pump and the crucible is placed into the crystal growth furnace, the solvent zone should be located at the position with the highest furnace temperature. Start the drive device. When the drive motor is running, it will quickly drive the lead screw to rotate. During the rotation of the lead screw, the furnace is moved by driving the lead screw nut to move up or down. When the furnace moves upward, the polycrystalline raw material dissolves and enters the solvent zone to form a solution. In the lower low-temperature zone, the solution is supersaturated, and the dissolved solute is re-precipitated and deposited on the growth interface below the solution. By adjusting the forward and reverse rotation time of the drive motor, the furnace is moved up and down in a cycle.

[0015] S4. When starting the heating furnace, first heat up at a rate of 1-5℃ / min. When the temperature reaches the melting point of Cd, hold it for 0.5-2 hours. Then heat up at a rate of 1-5℃ / min. When the temperature reaches the melting point of Zn, hold it for 0.5-2 hours. Then heat up to the melting point of Te (449℃) at a rate of 0.2-2℃ / min and hold it for 0.5-10 hours. Finally, heat up to 900℃ at a rate of 0.5-5℃ / min.

[0016] S5. When the drive motor is running continuously, the drive motor will drive the growth furnace and the crucible inside the growth furnace to rotate through the lead screw. The rotation speed is 0.01-30 rpm and the rotation time is 50-500 min.

[0017] S6. After the synthesis of zinc cadmium telluride is completed, the liquid in the insulated water tank is injected into the annular guide pipe by a water pump installed inside one side of the insulated water tank. During the injection process, the liquid will absorb the temperature of the heat dissipation layer along the annular guide pipe, thereby accelerating the cooling effect inside the vacuum chamber. After the zinc cadmium telluride is completely cooled, it is taken out. When it is necessary to process zinc cadmium telluride again, the liquid in the insulated water tank is injected into the annular guide pipe by a water pump installed inside the other side of the insulated water tank. The heat absorbed by the liquid assists in heating up the vacuum chamber.

[0018] The beneficial effects of this invention are as follows:

[0019] 1. This invention, by setting up an insulated water tank, a heating furnace, an annular guide pipe, and a vacuum hood, allows the liquid in the insulated water tank to be injected into the annular guide pipe after the synthesis of zinc cadmium telluride (ZC) is completed, simply by using a water pump inside one side of the insulated water tank. During the injection process, the liquid absorbs the temperature of the heat dissipation layer along the annular guide pipe, thereby accelerating the cooling effect inside the vacuum hood. After complete cooling, the ZC is removed. When it is necessary to process the ZC again, the liquid in the insulated water tank is injected into the annular guide pipe by a water pump inside the other side of the insulated water tank. The heat absorbed by the liquid assists in heating the vacuum hood, reducing the resources required to raise the internal temperature of the vacuum hood. This allows the synthesis device to effectively reduce resource consumption during use, lower the production cost of ZC, and ensure the processing quality of ZC by assisting in accelerating heating and cooling.

[0020] 2. This invention, by setting up a heating furnace, telescopic rod, and lead screw, allows the heating furnace to move back and forth during use. The polycrystalline material does not melt but only dissolves at the polycrystalline material dissolution interface. The dissolved solute is transported downwards through the solvent zone, crystallizing at the lower crystal growth interface. The temperature field of the heating furnace continuously moves upwards, and the solvent zone also slowly moves upwards, causing the lower crystal to grow continuously, eventually completing the crystal growth process. This reduces defects such as dislocation density and twinning. The open growth method easily obtains high-quality, uniformly composed zinc-cadmium telluride crystals. This method requires careful control of the matching relationship between the temperature field movement speed and the crystal growth rate. The use of a rotating growth furnace removes excess solvent, reducing the density of zinc-cadmium telluride precipitates in the crystal. Simultaneously, the crystal absorbs some Te precipitate, accelerating the uniformity of crystallization and the reaction rate. This improves the size and purity of the processed zinc-cadmium telluride polycrystalline material and reduces the occurrence of low dislocation densities. Attached Figure Description

[0021] Figure 1 This is a three-dimensional structural schematic diagram of the present invention;

[0022] Figure 2This is a three-dimensional structural diagram of the mounting base of the present invention;

[0023] Figure 3 This is a three-dimensional structural schematic diagram of the annular guide tube of the present invention;

[0024] Figure 4 This is a three-dimensional structural diagram of the fixing frame of the present invention;

[0025] Figure 5 This is a three-dimensional structural schematic diagram of the vacuum hood of the present invention;

[0026] Figure 6 This is a flowchart of the present invention;

[0027] In the diagram: 1. Mounting base, 2. Support column, 3. Mounting top plate, 4. Fixing frame, 5. Drive device, 51. Mounting bracket, 52. Drive motor, 6. Bearing, 7. Lead screw, 8. Lead screw nut, 9. Retainer, 10. Telescopic rod, 11. Heating furnace, 12. Support frame, 13. Growth furnace, 14. Auxiliary rod, 15. Vacuum hood, 151. Heat dissipation layer, 152. Sealing layer, 16. Annular guide pipe, 17. Connecting device, 171. T-joint, 172. First guide pipe, 18. Second guide pipe, 19. Insulated water tank, 20. Mounting plate, 21. Suction cup. Detailed Implementation

[0028] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0029] like Figure 1-6As shown, this invention provides a polycrystalline synthesis device for zinc cadmium telluride, including a mounting base 1. Support columns 2 are fixedly connected to the four corners of the upper surface of the mounting base 1, and the bottom ends of the four support columns 2 are respectively fixedly connected to the four corners of the lower surface of a mounting top plate 3. The inner wall of the mounting top plate 3 is fixedly connected to the outer surface of a fixing frame 4. A driving device 5 is fixedly connected to the upper surface of the fixing frame 4. The top end of a lead screw 7 at the bottom of the driving device 5 is fixedly connected to the drive screw 7. The outer surface of the lead screw 7 is sleeved within a bearing 6, which is engaged with the lower surface of the fixing frame 4. A lead screw nut 8 is threaded onto the outer surface of the lead screw 7. The left and right sides of the nut 8 are fixedly connected to the opposite sides of the two retainers 9, and the upper surfaces of the two retainers 9 are fixedly connected to the telescopic rods 10. The top ends of the two telescopic rods 10 are fixedly connected to the lower surface of the fixed frame 4. The bottom end of the telescopic rod 10 passes through the retainer 9 and is fixedly connected to the upper surface of the heating furnace 11. The bottom end of the lead screw 7 is fixedly connected to the upper surface of the growth furnace 13. The lower surface of the growth furnace 13 is fixedly connected to the top end of the auxiliary rod 14. The bottom end of the auxiliary rod 14 is clamped to the upper surface of the mounting base 1 through a sleeve. The upper surface of the mounting base 1 is fixedly connected to the vacuum cover 15.

[0030] The fixed frame 4 is set in a cross shape, the telescopic rod 10 is set in a multi-section telescopic rod, the outer surface of the growth furnace 13 is provided with a sealed door, the lower surfaces of the two heating furnaces 11 are fixedly connected to the same support frame 12, the outer surface of the vacuum hood 15 is provided with several annular guide pipes 16, and two corresponding annular guide pipes 16 are connected by a connecting device 17. The outer surface of the upper annular guide pipe 16 is connected to one end of the back of the second conduit 18, and the other end of the second conduit 18 is connected to the upper surface of the insulated water tank 19 located in front.

[0031] There are two insulated water tanks 19, and the lower surfaces of the two insulated water tanks 19 are fixedly connected to the upper surfaces of the two mounting plates 20 respectively. The opposite surfaces of the two mounting plates 20 are fixedly connected to the front and back of the mounting base 1 respectively. The outer surface of the insulated water tank 19 located at the rear is connected to the annular guide pipe 16 located below through a pipe. Suction cups 21 are provided at the four corners of the lower surface of the mounting base 1. A water pump is provided in each of the two insulated water tanks 19. The drive device 5 includes a mounting frame 51. The lower surface of the mounting frame 51 is fixedly connected to the upper surface of the fixed frame 4. The inner wall of the mounting frame 51 is fixedly connected to the outer surface of the drive device 5. The bottom end of the drive device 5 is fixedly connected to the top end of the lead screw 7.

[0032] The connecting device 17 includes two tees 171, and the two tees 171 are respectively sleeved on the outer surfaces of the corresponding two annular guide tubes 16. One end of the two tees 171 facing each other is connected through the first conduit 172. The vacuum shroud 15 includes a sealing layer 152. A heat dissipation layer 151 is provided on the outer surface of the sealing layer 152. The back sides of the sealing layer 152 and the heat dissipation layer 151 are fixedly connected to the upper surface of the mounting base 1. The outer surface of the heat dissipation layer 151 overlaps with the outer surface of the annular guide tube 16.

[0033] A method for synthesizing polycrystalline cadmium zinc telluride using an apparatus, the method comprising the following steps:

[0034] S1. Weigh out three high-purity raw materials, Te, Cd, and Zn, according to the proportions, and load them into a carbon-coated quartz crucible from bottom to top.

[0035] S2. Place the seed crystal at the bottom of the crucible, fill an appropriate amount of solvent above the seed crystal, place the pre-synthesized polycrystalline material above the solvent zone, and compact the material in the solvent zone to prevent the dissolved polycrystalline material above from falling directly onto the surface of the seed crystal. Then, install the crucible inside the growth furnace 13.

[0036] S3. When the gas inside the vacuum hood 15 is extracted by an external vacuum pump and the crucible is placed into the crystal growth furnace 13, the solvent zone should be located at the position with the highest furnace temperature. Start the drive device 5. When the drive motor 52 is running, the drive motor 52 will quickly drive the lead screw 7 to rotate. During the rotation of the lead screw 7, the heating furnace 11 will be moved by driving the lead screw nut 8 to move up or down. When the heating furnace 11 moves upward, the polycrystalline raw material dissolves and enters the solvent zone to form a solution. In the lower low temperature zone, the solution is supersaturated, and the dissolved solute is re-precipitated and deposited on the growth interface below the solution. By adjusting the forward and reverse rotation time of the drive motor 52, the heating furnace 11 is moved up and down in a cycle.

[0037] S4. When heating furnace 11 is started, the temperature is first increased at a rate of 1-5℃ / min. When the temperature reaches the melting point of Cd, it is held for 0.5-2 hours. Then the temperature is increased at a rate of 1-5℃ / min. When the temperature reaches the melting point of Zn, it is held for 0.5-2 hours. Then the temperature is increased at a rate of 0.2-2℃ / min to the melting point of Te (449℃), and held for 0.5-10 hours. Finally, the temperature is increased to 900℃ at a rate of 0.5-5℃ / min.

[0038] S5. When the drive motor 52 is running continuously, the drive motor 52 will drive the growth furnace 13 and the crucible inside the growth furnace 13 to rotate through the lead screw 7. The rotation speed is 0.01-30 rpm and the rotation time is 50-500 min.

[0039] S6. After the synthesis of zinc cadmium telluride is completed, the liquid in the insulated water tank 19 is injected into the annular guide pipe 16 by a water pump installed inside the insulated water tank 19 on one side. During the injection process, the liquid will absorb the temperature of the heat dissipation layer 151 along the annular guide pipe 16, thereby accelerating the cooling effect inside the vacuum chamber 15. After the cooling is complete, the zinc cadmium telluride is taken out. When the zinc cadmium telluride needs to be processed again, the liquid in the insulated water tank 19 is injected into the annular guide pipe 16 by a water pump installed inside the insulated water tank 19 on the other side. The heat absorbed by the liquid assists in heating the vacuum chamber 15.

[0040] By setting up an insulated water tank 19, a heating furnace 11, an annular guide pipe 16, and a vacuum hood 15, when it is necessary to process cadmium zinc telluride again, the liquid in the insulated water tank 19 is injected into the annular guide pipe 16 by a water pump installed inside the insulated water tank 19 on the other side. The heat absorbed by the liquid assists in heating the vacuum hood 15, reducing the resources required to raise the internal temperature of the vacuum hood 15. This allows the synthesis device to effectively reduce resource consumption during use, lower the cost of producing cadmium zinc telluride, and ensure the processing quality of cadmium zinc telluride by assisting in accelerating heating and cooling.

[0041] By setting up a heating furnace 11, a telescopic rod 10, and a lead screw 7, defects such as dislocation density and twinning are reduced. The open growth method makes it easy to obtain high-quality zinc-cadmium crystals with uniform composition. This method requires reasonable control of the matching relationship between the temperature field movement speed and the crystal growth rate. The use of a rotary growth furnace 13 removes excess solvent, reduces the precipitate density of zinc-cadmium telluride in the crystal, and allows the crystal to absorb some Te precipitate, accelerating the uniformity of crystallization and the reaction rate. This improves the size and purity of the processed zinc-cadmium telluride polycrystalline material and reduces the occurrence of low dislocation density in the zinc-cadmium telluride polycrystalline material.

[0042] Finally, the following points should be noted: First, in the description of this application, it should be noted that, unless otherwise specified and limited, the terms "installation", "connection", and "linkage" should be interpreted broadly, and can be mechanical or electrical connections, or internal connections between two components, or direct connections. "Up", "down", "left", "right", etc. are only used to indicate relative positional relationships. When the absolute position of the described object changes, the relative positional relationship may change.

[0043] Secondly: The accompanying drawings of the embodiments disclosed in this invention only involve the structures involved in the embodiments disclosed in this invention. Other structures can refer to the general design. In the absence of conflict, the same embodiment and different embodiments of this invention can be combined with each other.

[0044] In conclusion, the above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the protection scope of the present invention.

Claims

1. A method for synthesizing polycrystalline zinc cadmium telluride, characterized in that, The polycrystalline cadmium zinc telluride synthesis device used in this synthesis method includes a mounting base (1). Support columns (2) are fixedly connected to the four corners of the upper surface of the mounting base (1), and the bottom ends of the four support columns (2) are fixedly connected to the four corners of the lower surface of the mounting top plate (3). The inner wall of the mounting top plate (3) is fixedly connected to the outer surface of the fixing frame (4). A driving device (5) is fixedly connected to the upper surface of the fixing frame (4). The driving device (5) includes a mounting frame (51) and a driving motor (52). The top end of the bottom lead screw (7) of the driving device (5) is fixedly connected. The outer surface of the lead screw (7) is sleeved in a bearing (6). The bearing (6) is snapped into the lower surface of the fixing frame (4). The outer surface of the lead screw (7) is threaded with... The screw nut (8) has its left and right sides fixedly connected to the opposite sides of the two retainers (9), and the upper surfaces of the two retainers (9) are fixedly connected to telescopic rods (10). The top ends of the two telescopic rods (10) are fixedly connected to the lower surface of the fixed frame (4). The bottom ends of the two telescopic rods (10) pass through the retainers (9) and are fixedly connected to the upper surfaces of the corresponding two heating furnaces (11). The bottom end of the screw (7) is fixedly connected to the upper surface of the growth furnace (13). The lower surface of the growth furnace (13) is fixedly connected to the top end of the auxiliary rod (14). The bottom end of the auxiliary rod (14) is clamped to the upper surface of the mounting base (1) by a sleeve. The upper surface of the mounting base (1) is fixedly connected to a vacuum cover (15). The synthesis method includes the following steps: S1. Weigh out three high-purity raw materials, Te, Cd, and Zn, according to the proportions, and load them into a carbon-coated quartz crucible from bottom to top. S2. Place the seed crystal at the bottom of the crucible, fill an appropriate amount of solvent above the seed crystal, place the pre-synthesized polycrystalline material above the solvent zone, and compact the material in the solvent zone to prevent the dissolved polycrystalline material above from falling directly onto the surface of the seed crystal. Then install the crucible in the growth furnace (13). S3. When the gas in the vacuum hood (15) is extracted by an external vacuum pump and the crucible is placed in the growth furnace (13), the solvent zone should be located at the position with the highest furnace temperature. Start the drive device (5). When the drive motor (52) is running, the drive motor (52) will quickly drive the lead screw (7) to rotate. During the rotation of the lead screw (7), the heating furnace (11) will be moved by driving the lead screw nut (8) to move up or down. When the heating furnace (11) moves up, the polycrystalline raw material dissolves and enters the solvent zone to form a solution. In the lower low temperature zone, the solution is supersaturated, and the dissolved solute is re-precipitated and deposited on the growth interface below the solution. By adjusting the forward and reverse rotation time of the drive motor (52), the heating furnace (11) moves up and down repeatedly. S4. When the heating furnace (11) is started, it first heats up at a rate of 1-5℃ / min. When the temperature reaches the melting point of Cd, it is held for 0.5-2 hours. Then it heats up at a rate of 1-5℃ / min. When the temperature reaches the melting point of Zn, it is held for 0.5-2 hours. Then it heats up to the melting point of Te (449℃) at a rate of 0.2-2℃ / min and is held for 0.5-10 hours. Finally, it heats up to 900℃ at a rate of 0.5-5℃ / min. S5. When the drive motor (52) runs continuously, the drive motor (52) will drive the growth furnace (13) and the crucible inside the growth furnace (13) to rotate through the lead screw (7). The rotation speed is 0.01-30 rpm and the rotation time is 50-500 min. S6. After the zinc-cadmium telluride is processed and synthesized, the liquid in the insulated water tank (19) is injected into the annular guide pipe (16) by the water pump installed inside the insulated water tank (19) on one side. During the injection process, the liquid will absorb the temperature of the heat dissipation layer (151) along the annular guide pipe (16), thereby accelerating the cooling effect inside the vacuum chamber (15). After the liquid is completely cooled, the zinc-cadmium telluride is taken out. When the zinc-cadmium telluride needs to be processed again, the liquid in the insulated water tank (19) is injected into the annular guide pipe (16) by the water pump installed inside the insulated water tank (19) on the other side. The heat absorbed by the liquid helps the vacuum chamber (15) to heat up.

2. The method for synthesizing polycrystalline zinc-cadmium telluride according to claim 1, characterized in that: The fixed frame (4) is set in a cross shape, the telescopic rod (10) is set in a multi-section telescopic rod, the outer surface of the growth furnace (13) is provided with a sealing door, and the lower surfaces of the two heating furnaces (11) are fixedly connected to the same support frame (12).

3. The method for synthesizing polycrystalline zinc cadmium telluride according to claim 1, characterized in that: The outer surface of the vacuum hood (15) is provided with a number of annular guide tubes (16). Two annular guide tubes (16) are connected by a connecting device (17). The outer surface of the upper annular guide tube (16) is connected to one end of the back of the second conduit (18). The other end of the second conduit (18) is connected to the upper surface of the insulated water tank (19) located in front.

4. The method for synthesizing polycrystalline zinc cadmium telluride according to claim 3, characterized in that: There are two insulated water tanks (19), and the lower surfaces of the two insulated water tanks (19) are fixedly connected to the upper surfaces of the two mounting plates (20), respectively. The opposite surfaces of the two mounting plates (20) are fixedly connected to the front and back of the mounting base (1), respectively. The outer surface of the insulated water tank (19) located at the rear is connected to the annular guide pipe (16) located below through a pipe. Suction cups (21) are provided at the four corners of the lower surface of the mounting base (1), and water pumps are provided in both insulated water tanks (19).

5. The method for synthesizing polycrystalline zinc cadmium telluride according to claim 1, characterized in that: The lower surface of the mounting bracket (51) is fixedly connected to the upper surface of the fixing bracket (4), the inner wall of the mounting bracket (51) is fixedly connected to the outer surface of the drive motor (52), and the bottom end of the drive device (5) is fixedly connected to the top end of the lead screw (7).

6. The method for synthesizing polycrystalline zinc-cadmium telluride according to claim 3, characterized in that: The connecting device (17) includes two tees (171), and the two tees (171) are respectively sleeved on the outer surfaces of the corresponding two annular guide tubes (16), and one end of the opposite face of the two tees (171) is connected through the first conduit (172).

7. The method for synthesizing polycrystalline zinc cadmium telluride according to claim 1, characterized in that: The vacuum shroud (15) includes a sealing layer (152), and a heat dissipation layer (151) is provided on the outer surface of the sealing layer (152). The back of the sealing layer (152) and the heat dissipation layer (151) are fixedly connected to the upper surface of the mounting base (1). The outer surface of the heat dissipation layer (151) overlaps with the outer surface of the annular guide tube (16).

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