Biometric recognition module and sensing electrode circuit thereof, display device

Abstract

The present application provides a kind of biometric recognition module, comprising: a thin film transistor array substrate, with multiple pixels, each pixel has a thin film transistor and a pixel data electrode;And a sensing sub-module, disposed on the thin film transistor array substrate and electrically coupled to the thin film transistor array substrate, the sensing sub-module has multiple sensing electrodes and multiple composite circuit structures;Wherein, each composite circuit structure has a metal wire, and each metal wire is configured to be electrically coupled to each sensing electrode and can pass through other pixels to different positions, so that the sensing electrodes can be executed in other pixels a biometric recognition.

Description

Technical Field

[0001] This invention relates to an identification module, and more particularly to a biometric identification module and its sensing electrode circuit and display device. Background Technology

[0002] Figure 1 This is a cross-sectional view of the structure of a fingerprint recognition module in the prior art. Figure 2 This is a schematic diagram illustrating the pixel design of a fingerprint recognition module in the prior art. For example... Figure 1 As shown, the fingerprint recognition module 1 includes: a thin-film transistor array substrate 20, and a stack 10 located on the thin-film transistor array substrate 20. The stack 10 has a thin film 10a, a silver electrode 10b, a piezoelectric material layer 10c, a protective layer (Primer C) 10d, and an ITO electrode 10e. The thin-film transistor array substrate 20 includes an insulating layer 20b, an insulating layer 20c, an insulating layer 20d, a buffer layer 20e, a substrate 20f, and a metal conductor 20a. The thin-film transistor 30 has a gate 30a, source / drain electrodes 30b and 30c, signal lines 30d and 30e, and a channel region 30f; there is conductive metal below the thin-film transistor 30. Additionally, as... Figure 2 As shown in the top view, the ITO electrode 10e of pixel 2 between scan line S1 and scan line S2 receives the signal from the silver electrode 10b through the piezoelectric material 10c.

[0003] However, the recognition area and effect of current fingerprint recognition devices are often limited by the pixel shape, size and circuit design of the existing fingerprint recognition module 1 and thin film transistor array substrate 20.

[0004] Therefore, how to provide a biometric identification module and its sensing electrode circuit and display device that can solve the above problems is an important issue that the industry needs to consider. Summary of the Invention

[0005] In view of the above, one embodiment of the present disclosure provides a biometric identification module, comprising: a thin-film transistor array substrate having a plurality of pixels, each pixel having a thin-film transistor and a pixel data electrode; and a sensing sub-module disposed on and electrically coupled to the thin-film transistor array substrate, the sensing sub-module having a plurality of sensing electrodes and a plurality of composite circuit structures; wherein each composite circuit structure has a metal wire, and each metal wire is disposed electrically coupled to each sensing electrode and can pass through the other pixels to different positions, so that the sensing electrodes can perform a biometric identification on the other pixels.

[0006] According to one or more embodiments of the present disclosure, each of the composite line structures is electrically coupled to one of the pixel data electrodes through the metal wire, and some of the pixel data electrodes are electrically coupled to the composite line structures in a one-to-many manner.

[0007] According to one or more embodiments of the present disclosure, one or more of the sensing electrodes are configured to form a sensing region through the metal wire, and the sensing region covers a pixel region formed by one or more of the pixels and / or a non-pixel region outside the pixel region.

[0008] According to one or more embodiments of the present disclosure, the shape of the sensing region is configured to be different from the shape of the pixel region.

[0009] According to one or more embodiments of the present disclosure, each of the composite line structures includes the sensing electrode, the metal wire, and an insulating layer, and the sensing electrode passes through the insulating layer to be electrically coupled to the metal wire.

[0010] In addition, another aspect of the present disclosure provides a display device, including: a display module; and a biometric recognition module configured to be electrically coupled to the display module, the biometric recognition module including: a thin film transistor array substrate having a plurality of pixels, each of the pixels having a thin film transistor and a pixel data electrode; and a plurality of sensing sub-modules configured on and electrically coupled to the thin film transistor array substrate, each of the sensing sub-modules having a plurality of sensing electrodes and a plurality of composite line structures; wherein each of the composite line structures has a metal wire, and each of the metal wires is configured to be electrically coupled to each of the sensing electrodes and to pass through other pixels to different positions, so that the sensing electrodes can perform a biometric recognition on other pixels.

[0011] In addition, another aspect of the present disclosure provides a sensing electrode circuit of a biometric recognition module, including: one or more sensing units, each of the sensing units being electrically coupled to a first end of a different capacitance, and being electrically coupled to a first end of a first transistor and a control end of a second transistor, respectively; wherein each of the sensing units has a first parasitic capacitance and a second parasitic capacitance, respectively; wherein each of the first parasitic capacitances is a parasitic capacitance generated by each sensing electrode at a sensing position and nearby other first pixels; and wherein each of the second parasitic capacitances is a parasitic capacitance generated by each metal wire and other second pixels passing through.

[0012] According to one or more embodiments of the present disclosure, a first end of each of the sensing electrodes is electrically coupled to the first end of each of the capacitances.

[0013] According to one or more embodiments of the present disclosure, a second end of each of the sensing electrodes is electrically coupled to a first end of each of the metal wires, and a second end of each of the metal wires is electrically coupled to the first end of the first transistor and the control end of the second transistor.

[0014] According to one or more embodiments of the present disclosure, the one or more sensing units are configured to be linked to one or more groups of signals. BRIEF DESCRIPTION OF DRAWINGS

[0015] In order to make the above and other objects, features, advantages and embodiments of the present application more comprehensible, the following description is provided:

[0016] Figure 1 FIG. 1 is a schematic diagram illustrating a cross-sectional view of a conventional fingerprint recognition module.

[0017] Figure 2 FIG. 2 is a schematic diagram illustrating a pixel design of the conventional fingerprint recognition module.

[0018] Figure 3 FIG. 3 is a schematic diagram illustrating a cross-sectional view of a biometric recognition module according to an embodiment of the present disclosure.

[0019] Figures 4 to 7 FIG. 4 is a schematic diagram illustrating a pixel design of the biometric recognition module according to different embodiments of the present disclosure.

[0020] Figure 8 FIG. 5 is a schematic diagram illustrating a top view of the biometric recognition module according to an embodiment of the present disclosure.

[0021] Figure 9 FIG. 6 is a schematic diagram illustrating a partial enlarged view of the biometric recognition module. Figure 8

[0022] Figure 10 FIG. 7 is a schematic diagram illustrating a sensing electrode circuit of the biometric recognition module according to an embodiment of the present disclosure.

[0023] Figure 11 FIG. 8 is a schematic diagram illustrating a display device according to an embodiment of the present disclosure.

[0024] In accordance with common practice the various features and elements described with reference to the drawings can not be drawn to scale but are drawn in such a way as to emphasize specific features relevant to the present application. Moreover, the same or similar elements and / or components are denoted by the same or similar reference symbols throughout the drawings.

[0025] The reference signs in the drawings are:

[0026] 1: Fingerprint recognition module

[0027] 2: Pixel

[0028] 10: Stacking layer​

[0029] 10a: thin film

[0030] 10b: silver electrode

[0031] 10c: piezoelectric material layer

[0032] 10d: primer C

[0033] 10e: ITO electrode

[0034] 11, 12, 13, 14, 21, 22, 31: pixel

[0035] 20: thin film transistor array substrate

[0036] 20a: metal conductor

[0037] 20b: insulating layer

[0038] 20c: insulating layer

[0039] 20d: insulating layer

[0040] 20e: buffer layer

[0041] 20f: substrate

[0042] 30: thin film transistor

[0043] 30a: gate

[0044] 30b, 30c: source / drain

[0045] 30d, 30e: signal line

[0046] 30f: channel region

[0047] S1, S2: scan line

[0048] 300: biometric recognition module

[0049] 301: sensing sub-module

[0050] 301a, 301b: stack

[0051] 302: thin film transistor array substrate

[0052] 310: silver electrode layer

[0053] 312: piezoelectric material layer

[0054] 314: primer C

[0055] 316: insulating layer

[0056] 318: insulating layer

[0057] 320: insulating layer

[0058] 322: insulating layer

[0059] 324: buffer layer

[0060] 326: substrate

[0061] 800, 810: piezoelectric material

[0062] 900: driving circuit

[0063] 1000: sensing electrode circuit of biometric recognition module

[0064] 1100: display device

[0065] 1000a, 1000b: sensing unit

[0066] 2000: display module

[0067] D1, D2, D3, D4: pixel data electrode

[0068] P1, P2, P3, P4: pixel

[0069] M1, M2, M3: metal wire

[0070] M11: transistor

[0071] MA1, MA2, MA3: metal wire

[0072] MA_N: metal wire

[0073] P_N: pixel

[0074] SE1, SE2, SE3, SE4: sensing electrode

[0075] SE_N: sensing region

[0076] STR1, STR2, STR3, STR4: composite line structure

[0077] T1, T2, T3, T4: thin film transistor

[0078] T100, T200: transistor

[0079] TG: gate

[0080] TRX_1, TRX_2: signal

[0081] TS, TD: source / drain

[0082] TSM: conductive metal

[0083] C12, C22: first parasitic capacitance

[0084] C13, C23: second parasitic capacitance

[0085] A-ITO-1, A-ITO-2: sensing electrode

[0086] P_K1, P_K2: first pixel

[0087] A-M-1, A-M-2: metal wire

[0088] P_L1, P_L2: second pixel

[0089] C11, C21: capacitance DETAILED DESCRIPTION

[0090] In order to enable the examiners to further understand and appreciate the objectives, shapes, structural features and effects of the present application, embodiments are described in detail below with reference to the accompanying drawings.

[0091] The following disclosure provides different embodiments or examples to build different features of the provided objects. The specific examples of the components and arrangements described below are intended to simplify the disclosure, and are not intended to constitute a limitation; the dimensions and shapes of the elements are also not limited by the ranges or values disclosed, but can depend on the process conditions or desired characteristics of the elements. For example, the technical features of the present application are described using cross-sectional views, which are idealized embodiment schematic views. Thus, variations in the shapes of the illustrations due to manufacturing processes and tolerances are foreseeable, and should not be limited.

[0092] Furthermore, spatially relative terms, such as "below", "under", "lower", "above", "upper", and the like, are used for ease of description to describe the relationship of one element or another in the drawings. In addition, spatially relative terms include different directions of the elements when used or operated.

[0093] First of all, it should be pointed out that in the following embodiments of the present application, for the sake of convenience and brevity, sometimes only a limited number of elements are illustrated, but this is not intended to limit the present application, and the number can be appropriately adjusted according to design requirements.

[0094] Next, please refer to Figure 3 , Figure 3 is a cross-sectional view of the structure of a biometric recognition module according to an embodiment of the present application. As Figure 3 shown, the biometric recognition module 300 according to an embodiment of the present application includes a thin film transistor array substrate 302 and a sensing sub-module 301.

[0095] AsFigure 3 As shown, in an embodiment of the present invention, the thin-film transistor array substrate 302 has a plurality of pixels P1, P2, P3, and P4. Pixel P1 has a thin-film transistor T1 and a pixel data electrode D1; pixel P2 has a thin-film transistor T2 and a pixel data electrode D2; pixel P3 has a thin-film transistor T3 and a pixel data electrode D3; and pixel P4 has a thin-film transistor T4 and a pixel data electrode D4. For example, thin-film transistor T1 has a gate TG, a source / drain TS, a TD, and a channel region TG; a conductive metal TSM is located below thin-film transistor T1. Thin-film transistors T2, T3, and T4 have the same structure as thin-film transistor T1 and will not be described further. In addition, the thin-film transistor array substrate 302 also includes an insulating layer 318, an insulating layer 320, an insulating layer 322, a buffer layer 324, and a substrate 326. The buffer layer 324 has the functions of planarization, shielding, and insulation. The conductive metal TSM has a light-shielding function to prevent light leakage in the channel area TG.

[0096] like Figure 3 As shown, in an embodiment of the present invention, the sensing sub-module 301 is disposed on and electrically coupled to the thin-film transistor array substrate 302. It should be noted that the sensing sub-module 301 includes a stack 301a and a stack 301b. Stack 301a contains a silver electrode layer 310, a piezoelectric material layer 312, and a primer layer 314.

[0097] It should be noted that the stack 301b has a plurality of sensing electrodes SE1, SE2, SE3, SE4 made of transparent conductive materials such as ITO, and a plurality of composite circuit structures STR1, STR2, STR3, STR4. Each composite circuit structure STR1, STR2, STR3, STR4 has a metal wire MA1, MA2, MA3, and each metal wire MA1, MA2, MA3 is configured to be electrically coupled to each of the sensing electrodes SE1, SE2, SE3, SE4 and can pass through other pixels (e.g., pixels P1, P2, P3, P4 or pixels other than P1, P2, P3, P4) to different locations, so that the sensing electrodes SE1, SE2, SE3, SE4 can perform a biometric identification on pixels P1, P2, P3, P4 or pixels other than P1, P2, P3, P4. Furthermore, each of the composite circuit structures STR1, STR2, STR3, and STR4 includes each of the sensing electrodes SE1, SE2, SE3, and SE4, each of the metal wires MA1, MA2, and MA3, and an insulating layer 316. Each of the sensing electrodes SE1, SE2, SE3, and SE4 passes through the insulating layer 316 and is electrically coupled to each of the metal wires MA1, MA2, and MA3.

[0098] like Figure 3 As shown, in an embodiment of the present invention, each composite circuit structure STR1, STR2, STR3, STR4 is electrically coupled to one of the pixel data electrodes D1, D2, D3, D4 through each of the metal wires MA1, MA2, MA3, and the pixel data electrodes D1-D4 are electrically coupled to the composite circuit structures STR1, STR2, STR3, STR4 in a one-to-many manner.

[0099] Additionally, please refer to Figures 4 to 7 , Figures 4 to 7 The illustration shows a pixel design schematic of a biometric identification module in different embodiments of the present invention.

[0100] like Figure 4 As shown, in a pixel P_N of an embodiment of the present invention, through as... Figure 3 A metal wire MA_N of any composite circuit structure STR1, STR2, STR3 or STR4, and a sensing electrode SE1, SE2, SE3 or SE4 are configured to form a sensing region SE_N, which covers a portion of pixel P_N (i.e. pixel region) and a portion outside pixel P_N (i.e. non-pixel region).

[0101] like Figure 5 As shown, in a pixel P_N of an embodiment of the present invention, through as... Figure 3One of the metal wires MA_N of any of the composite line structures STR1, STR2, STR3, or STR4, one of the sensing electrodes SE1, SE2, SE3, or SE4 is configured to form a sensing region SE_N, and the sensing region SE_N can be outside the pixel P_N (i.e. non-pixel region).

[0102] As shown in FIG. 1, in the pixel P_N of an embodiment of the present disclosure, two of the sensing electrodes SE1, SE2, SE3, or SE4 are configured to form one or more independent sensing regions SE_N through one of the metal wires MA_N of any of the composite line structures STR1, STR2, STR3, or STR4, and the one or more independent sensing regions SE_N can be a portion outside the pixel P_N (i.e. non-pixel region). Figure 6 Figure 3 As shown in FIG. 1, in the pixel P_N of an embodiment of the present disclosure, two of the sensing electrodes SE1, SE2, SE3, or SE4 are configured to form one or more independent sensing regions SE_N through one of the metal wires MA_N of any of the composite line structures STR1, STR2, STR3, or STR4, and the one or more independent sensing regions SE_N can be a portion outside the pixel P_N (i.e. non-pixel region).

[0103] As shown in FIG. 1, in the pixel P_N of an embodiment of the present disclosure, two of the sensing electrodes SE1, SE2, SE3, or SE4 are configured to form one or more independent sensing regions SE_N through one of the metal wires MA_N of any of the composite line structures STR1, STR2, STR3, or STR4, and the one or more independent sensing regions SE_N can be a portion outside the pixel P_N (i.e. non-pixel region). Figure 7 Figure 3 As shown in FIG. 1, in the pixel P_N of an embodiment of the present disclosure, two of the sensing electrodes SE1, SE2, SE3, or SE4 are configured to form one or more independent sensing regions SE_N through one of the metal wires MA_N of any of the composite line structures STR1, STR2, STR3, or STR4, and the one or more independent sensing regions SE_N can be a portion outside the pixel P_N (i.e. non-pixel region).

[0104] From the layout of the sensing electrodes SE1, SE2, SE3, SE4 of an embodiment of the present disclosure, the ultrasonic wave can be detected through a metal wire MA_N to different locations across other pixels, achieving a fingerprint detection range different from the shape and size of the thin film transistor array substrate 302. That is, in an embodiment of the present disclosure, the shape of the sensing region SE_N can be configured to be different from the shape of the pixel region formed by the pixel P_N. Figures 4 to 7 In addition, please refer to

[0105] and Figure 8 , Figure 9 , Figure 8 is a top view of a biometric recognition module of an embodiment of the present disclosure. Figure 9 is a partially enlarged schematic view of the biometric recognition module of Figure 8 .

[0106] As shown in FIG. 1, in the pixel P_N of an embodiment of the present disclosure, two of the sensing electrodes SE1, SE2, SE3, or SE4 are configured to form one or more independent sensing regions SE_N through one of the metal wires MA_N of any of the composite line structures STR1, STR2, STR3, or STR4, and the one or more independent sensing regions SE_N can be a portion outside the pixel P_N (i.e. non-pixel region). Figure 8 ​​As shown, in an embodiment of the present invention, from a top view, the pixel region formed by pixels P_N on the thin-film transistor array substrate 302 is rectangular; the shape of the sensing region SE_N can be designed as a circle, semi-circle, ellipse, trapezoid or other arbitrary shape by arbitrarily configuring sensing electrodes SE1, SE2, SE3, SE4, etc. with the metal wire MA_N, or it can be a collection of sensing regions or multiple independent sensing regions.

[0107] In addition, such as Figure 9 As shown, from Figure 8 From the enlarged view, pixels 11, 12, 13, 14, 21, 22, 31... driven by a driving circuit 900 (note: symbol 11 represents the pixel in the first column and first row, and so on), are electrically coupled to corresponding sensing electrodes SE1, SE2, SE3, SE4... via metal wires M1, M2, and M3, respectively. It should be noted that metal wire M1 is the gate line of the thin-film transistor; metal wire M2 is the data line; and metal wire M3 is the metal wire MA_N in this embodiment of the invention. From... Figure 9 It can be understood that, in the embodiments of the present invention, the sensing electrodes SE1, SE2, SE3, and SE4 within each irregularly shaped design are connected to the pixels within the thin-film transistor array substrate 302 via metal wires MA_N for data transmission. When within the pixel area of ​​the thin-film transistor array substrate 302, routing must be performed via metal wires MA_N; when outside the pixel area of ​​the thin-film transistor array substrate 302, a transition layer design can be used to traverse other sets of metal wires MA_N.

[0108] Next, please refer to Figure 10 , Figure 10 This diagram illustrates a sensing electrode circuit of a biometric identification module according to an embodiment of the present invention.

[0109] like Figure 10 As shown, in one embodiment of the present invention, the sensing electrode circuit 1000 of the biometric identification module includes one or more sensing units 1000a and 1000b. Here, two sensing units 1000a and 1000b are used as an example for explanation.

[0110] like Figure 10 As shown, each of the sensing units 1000b and 1000a is electrically coupled to a first terminal of a different capacitor C11 and C21, respectively, and is also electrically coupled to a first terminal of a first transistor T100 (i.e., whose control terminal is connected to the scan line S_N+1) and a control terminal of a second transistor M11, respectively. Figure 10As shown, each of the sensing units 1000b and 1000a has a first parasitic capacitance C12, C22 and a second parasitic capacitance C13, C23. The first parasitic capacitances C12 and C22 are the parasitic capacitances generated by the sensing electrodes A-ITO-1 and A-ITO-2 at the sensing position and with other nearby first pixels P_K1 and P_K2. The second parasitic capacitances C13 and C23 are the parasitic capacitances generated by the metal wires AM-1 and AM-2 and other second pixels P_L1 and P_L2 that cross the wires.

[0111] In addition, such as Figure 10 As shown, the sensing electrode circuit 1000 of the biometric identification module further includes scan line S_N, scan line S_N+1, piezoelectric materials 800 and 810, ground VP, communication output TRX_1, communication output TRX_2, readout line, and a D-bias.

[0112] In addition, such as Figure 10 As shown, the sensing electrode circuit 1000 of the biometric identification module further includes a transistor T200 whose control terminal is electrically coupled to the scan line S_N, and a diode whose end is electrically coupled to the D-bias. Here, the two ends of the transistor T200 are respectively electrically coupled to one end of a second transistor M11 and the readout line, while the other end of the second transistor M11 is electrically coupled to ground VP. The other end of the diode is electrically coupled to the control terminal of the second transistor M11. A second end of the first transistor T100 is electrically coupled to one end of the diode and the D-bias. One end of the piezoelectric material 800 is electrically coupled to a second end of the capacitor C21, while the other end of the piezoelectric material 800 is electrically coupled to the communication output TRX_2; one end of the piezoelectric material 810 is electrically coupled to a second end of the capacitor C11, while the other end of the piezoelectric material 810 is electrically coupled to the communication output TRX_1.

[0113] In an embodiment of the present invention, a first end of each of the sensing electrodes A-ITO-1 and A-ITO-2 is electrically coupled to the first end of each of the capacitors C11 and C21.

[0114] In an embodiment of the present invention, a second end of each sensing electrode A-ITO-1, A-ITO-2 is electrically coupled to a first end of each metal wire AM-1, AM-2, and a second end of each metal wire AM-1, AM-2 is electrically coupled to the first end of the first transistor T100 and the control end of the second transistor M11.

[0115] In an embodiment of the present invention, the one or more sensing units 1000a, 1000b are configured to be linked to one or more sets of signals TRX_1, TRX_2.

[0116] Finally, please refer to Figure 3 with Figure 11 , Figure 11 is a schematic diagram of a display device according to an embodiment of the present application. As shown in Figure 11 ,

[0117] In addition, in an embodiment of the present application, the display device 1100 comprises a display module 2000 and a biometric recognition module. The biometric recognition module is configured to be electrically coupled to the display module 1000. The biometric recognition module is similar to the biometric recognition module 300 shown in Figure 3 , but comprises two sensing sub-modules 301, which are described as follows.

[0118] As shown in Figure 3 and Figure 11 , the biometric recognition module comprises a thin film transistor array substrate 302 and two sensing sub-modules 301.

[0119] The thin film transistor array substrate 302 has a plurality of pixels P1, P2, P3, P4, each of which has a thin film transistor T1, T2, T3, T4 and a pixel data electrode D1, D2, D3, D4.

[0120] The two sensing sub-modules 301 are configured on and electrically coupled to the thin film transistor array substrate 302. Each of the sensing sub-modules 301 has a plurality of sensing electrodes SE1, SE2, SE3, SE4 and a plurality of composite line structures STR1, STR2, STR3, STR4. Each of the composite line structures STR1, STR2, STR3, STR4 has a metal wire MA1, MA2, MA3, and each of the metal wires MA1, MA2, MA3 is configured to be electrically coupled to each of the sensing electrodes SE1, SE2, SE3, SE4 and can pass through other pixels P1, P2, P3, P4 to different positions, so that the sensing electrodes SE1, SE2, SE3, SE4 can perform a biometric recognition on other pixels P1, P2, P3, P4.

[0121] The above embodiments are only used to illustrate the technical solutions of the present application rather than limit the present application. Although the present application has been described in detail with reference to the preferred embodiments, those skilled in the art should understand that the technical solutions of the present application can be modified or equivalent replaced without departing from the spirit and scope of the technical solutions of the present application.

Claims

1. A biometric recognition module, characterized in that, A thin film transistor array substrate having a plurality of pixels, each of the pixels having a thin film transistor and a pixel data electrode; and A sensing sub-module disposed on and electrically coupled to the thin film transistor array substrate, the sensing sub-module having a plurality of sensing electrodes and a plurality of composite line structures; Each of the composite line structures has a metal wire, and each of the metal wires is configured to electrically couple to each of the sensing electrodes and to pass through other pixels to different positions, so that the sensing electrodes can perform biometric recognition in other pixels. Through each of the metal wires, one or more of the sensing electrodes are configured to form a sensing area, and the sensing area covers a pixel area formed by one or more of the pixels and / or a non-pixel area outside the pixel area. Through each of the metal wires, each of the composite line structures is electrically coupled to one of the pixel data electrodes, and part of the pixel data electrodes are electrically coupled to the composite line structures in a one-to-many manner.

2. The biometric recognition module of claim 1, wherein The shape of the sensing area is configured to be different from the shape of the pixel area.

3. The biometric recognition module of claim 1, wherein Each of the composite line structures includes each of the sensing electrodes, each of the metal wires, and an insulating layer, and each of the sensing electrodes passes through the insulating layer to electrically couple to each of the metal wires.

4. The biometric recognition module of claim 1, wherein A display module; and 5. A display device, characterized by comprising: A biometric recognition module configured to be electrically coupled to the display module, the biometric recognition module including: A thin film transistor array substrate having a plurality of pixels, each of the pixels having a thin film transistor and a pixel data electrode; and A plurality of sensing sub-modules disposed on and electrically coupled to the thin film transistor array substrate, each of the sensing sub-modules having a plurality of sensing electrodes and a plurality of composite line structures; Each of the composite line structures has a metal wire, and each of the metal wires is configured to electrically couple to each of the sensing electrodes and to pass through other pixels to different positions, so that the sensing electrodes can perform biometric recognition in other pixels. Through each of the metal wires, one or more of the sensing electrodes are configured to form a sensing area, and the sensing area covers a pixel area formed by one or more of the pixels and / or a non-pixel area outside the pixel area. ​ ​ ​

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