Transmission array, radiation unit, transmission array antenna and etching method

Abstract

The present application provides a transmission array, a radiation unit, a transmission array antenna and an etching method, comprising: at least one hundred closely arranged radiation units; the radiation unit comprises: a first dielectric substrate and a second dielectric substrate; the orthographic projections of the first dielectric substrate and the second dielectric substrate overlap; the first end face of the first dielectric substrate is etched with a cross-shaped metal layer; the second end face of the first dielectric substrate opposite to the first end face or the third end face of the second dielectric substrate is etched with a square embedded cross-shaped metal layer; the fourth end face of the second dielectric substrate opposite to the third end face is etched with a rectangular metal layer; the rectangular metal layer is provided with four inner chamfers; the transmission array is configured to determine the etching positions of the cross-shaped metal layer, the square embedded cross-shaped metal layer and the rectangular metal layer according to a phase compensation algorithm. The transmission array antenna provided by the present application has a large bandwidth, a low profile, maintains a high transmittance in a wide frequency band, and converts the incident wave into a vortex beam carrying orbital angular momentum.

Description

Technical Field

[0001] The present application relates to the field of antenna technology, and in particular to a transmission array surface, a radiation unit, a transmission array antenna and an etching method. Background Art

[0002] With the rapid development of wireless communications, more and more attention is focused on how to achieve larger bandwidth and higher transmission efficiency in communication systems.

[0003] However, the existing multi-layer frequency selective surface type transmission unit is composed of multiple layers of dielectric substrates, which has the problem of large dielectric loss, resulting in low transmittance, and ultimately causing low efficiency of the transmission array antenna; at the same time, stacking multiple layers of dielectric substrates will also increase processing costs and the profile height of the transmission array.

[0004] At present, the phase modulation technology based on the size transformation of the metal layer of the transmission-type radiation unit has become mature, which can enable the antenna to radiate vortex electromagnetic waves carrying orbital angular momentum (OAM for short). Because different modes of OAM are orthogonal, and vortex electromagnetic waves carrying different OAM modes can be transmitted at the same frequency and at the same time without interfering with each other. Therefore, under the same spectrum resource conditions, vortex electromagnetic waves can carry more information, which can improve spectrum efficiency and communication capacity in the communication field, and can improve radar resolution in the field of radar imaging. However, in the field of transmission-type radiation units, there is not much research on the phase modulation technology of the rotation angle method. Summary of the invention

[0005] In view of this, the purpose of the present application is to provide a transmission array, a radiation unit, a transmission array antenna and an etching method.

[0006] Based on the above purpose, the present application provides a transmission array, comprising: at least one hundred closely arranged radiation units;

[0007] The radiation unit comprises: a first dielectric substrate and a second dielectric substrate;

[0008] The orthographic projections of the first dielectric substrate and the second dielectric substrate overlap;

[0009] A cross-shaped metal layer is etched on the first end surface of the first dielectric substrate;

[0010] A square embedded cross-shaped metal layer is etched on a second end surface of the first dielectric substrate opposite to the first end surface or a third end surface of the second dielectric substrate;

[0011] A rectangular metal layer is etched on a fourth end surface of the second dielectric substrate opposite to the third end surface; the rectangular metal layer is provided with four inner chamfers;

[0012] The transmission array is configured to determine etching positions of the cross-shaped metal layer, the square-embedded cross-shaped metal layer, and the rectangular metal layer according to a phase compensation algorithm.

[0013] Based on the same inventive concept, the present application also provides a radiation unit, including:

[0014] a first dielectric substrate and a second dielectric substrate;

[0015] The orthographic projections of the first dielectric substrate and the second dielectric substrate overlap;

[0016] A cross-shaped metal layer is etched on the first end surface of the first dielectric substrate;

[0017] A square embedded cross-shaped metal layer is etched on a second end surface of the first dielectric substrate opposite to the first end surface or a third end surface of the second dielectric substrate;

[0018] A rectangular metal layer is etched on a fourth end surface of the second dielectric substrate opposite to the third end surface; the rectangular metal layer is provided with four inner chamfers;

[0019] The transmission array is configured to determine etching positions of the cross-shaped metal layer, the square-embedded cross-shaped metal layer, and the rectangular metal layer according to a phase compensation algorithm.

[0020] In a possible implementation, the method further includes:

[0021] a third dielectric substrate and a fourth dielectric substrate;

[0022] The orthographic projections of the third dielectric substrate and the fourth dielectric substrate overlap with the orthographic projections of the first dielectric substrate and the second dielectric substrate;

[0023] The rectangular metal layer is etched on the fifth end surface of the third dielectric substrate;

[0024] The square-embedded cross-shaped metal layer is etched on a sixth end face of the third dielectric substrate opposite to the fifth end face or a seventh end face of the fourth dielectric substrate;

[0025] The cross-shaped metal layer is etched on an eighth end surface of the fourth dielectric substrate opposite to the seventh end surface.

[0026] In a possible implementation, the cross-shaped metal layer is composed of two rectangular metal patches of the same shape and overlapping centers crossing at a preset angle; or the cross-shaped metal layer is composed of two elliptical metal patches of the same shape and overlapping centers crossing at a preset angle;

[0027] The square-embedded cross-shaped metal layer is composed of a square metal patch embedded in a cross-shaped structure, and the embedded cross-shaped structure is composed of a cross-shaped structure and a square structure; the cross-shaped structure overlaps with the center of the square structure, and the side of the square is perpendicular or parallel to one arm of the cross-shaped structure; or the embedded cross-shaped structure is composed of a cross-shaped structure and a circular structure, and the circular structure overlaps with the center of the cross-shaped structure;

[0028] The inner chamfer of the rectangular metal layer is a quarter circular structure or a triangular structure.

[0029] In a possible implementation manner, the radiation unit further includes at least one air layer.

[0030] The air layer is disposed between the first dielectric substrate and the second dielectric substrate, between the second dielectric substrate and the third dielectric substrate, and / or between the third dielectric substrate and the fourth dielectric substrate.

[0031] Based on the same inventive concept, the present application also provides a transmission array antenna, comprising:

[0032] A transmission array and a circularly polarized feed source opposite to the transmission array;

[0033] The transmission array comprises at least one hundred closely arranged radiation units according to any one of claims 2 to 5.

[0034] Based on the same inventive concept, the present application also provides a method for etching a radiation unit metal layer, comprising:

[0035] Get the transmission array antenna parameters;

[0036] According to the transmission array antenna parameters, the etching positions of the cross-shaped metal layer, the square embedded cross-shaped metal layer and the rectangular metal layer of each radiation unit of the transmission array are obtained by a phase compensation algorithm;

[0037] The radiation unit is etched according to the etching position.

[0038] In a possible implementation, the phase compensation formula includes:

[0039] A phase compensation algorithm for generating a single vortex electromagnetic wave beam and a phase compensation algorithm for generating multiple vortex electromagnetic wave beams.

[0040] In a possible implementation, the phase compensation algorithm for generating a single vortex electromagnetic wave beam is specifically:

[0041]

[0042] l=0,±1,±2…

[0043] Among them, φ mn represents the phase compensation required by the radiating element in the mth row and nth column, k0 represents the wave number in free space corresponding to the operating frequency, represents the position vector of the radiation unit in the mth row and nth column on the transmission array, Represents the vector from the phase center of the circularly polarized feed source adapted to the transmission array antenna to the center of the transmission array plane, represents the desired direction of the vortex beam carrying OAM, l represents the desired OAM mode, Represents the azimuth angle of the radiating element in the mth row and nth column on the normal plane of the beam.

[0044] In a possible implementation, the phase compensation algorithm for generating multiple vortex electromagnetic wave beams is specifically:

[0045]

[0046] in, represents the phase compensation required by the radiating element in the mth row and nth column, k represents the number of beams, k0 represents the wave number in free space corresponding to the operating frequency, represents the position vector of the radiation unit in the mth row and nth column on the transmission array, Represents the vector from the phase center of the circularly polarized feed source adapted to the transmission array antenna to the center of the transmission array plane, is the direction of the i-th beam, l i represents the OAM mode of the ith beam, Represents the azimuth angle of the radiation element in the mth row and nth column on the normal plane of the i-th beam.

[0047] As can be seen from the above, the transmission array, radiation unit, transmission array antenna and etching method provided by the present application, by setting the number of dielectric substrate layers of the radiation unit, setting the number and position of the air layer, setting the metal layer on each dielectric substrate of the radiation unit, and setting the position of the metal layer according to the phase compensation algorithm, finally obtain a transmission array antenna with a larger bandwidth, higher transmission efficiency, high transmittance and low profile. For the radiation unit, the setting of the number of its dielectric substrates, the setting of the metal layer on the dielectric substrate and the setting of the air layer enable the radiation unit to have a low profile while ensuring high transmittance, so that its transmission efficiency is effectively improved. In addition, the metal layer of the radiation unit is etched using a phase compensation algorithm, so that the transmission array composed of at least one hundred radiation units has high gain and broadband characteristics, can maintain high transmittance within a wide frequency band, and achieve a phase shift range of 360°. In addition, it is possible to effectively convert left-handed / right-handed circularly polarized incident waves into right-handed / left-handed circularly polarized vortex electromagnetic waves within a wide bandwidth, so that it can carry more information and improve transmission efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0048] In order to more clearly illustrate the technical solutions in the present application or related technologies, the drawings required for use in the embodiments or related technical descriptions are briefly introduced below. Obviously, the drawings described below are only embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0049] Figure 1 A schematic diagram of a transmission array antenna according to an embodiment of the present application;

[0050] Figure 2 This is a schematic diagram of the three-dimensional structure of the radiation unit in an embodiment of the present application;

[0051] Figure 3 A cross-sectional schematic diagram of a radiation unit according to an embodiment of the present application;

[0052] Figure 4 A schematic diagram of a cross-shaped metal layer of a radiation unit according to an embodiment of the present application;

[0053] Figure 5 This is a schematic diagram of a cross-shaped metal layer embedded in a square of a radiation unit according to an embodiment of the present application;

[0054] Figure 6 A schematic diagram of a rectangular metal layer of a radiation unit according to an embodiment of the present application;

[0055] Figure 7 A curve diagram showing changes in transmission coefficient, reflection coefficient and frequency in an embodiment of the present application;

[0056] Figure 8 Graphs of transmission coefficient amplitude and phase at different incident angles according to an embodiment of the present application. DETAILED DESCRIPTION

[0057] In order to make the objectives, technical solutions and advantages of the present application more clearly understood, the present application is further described in detail below in combination with specific embodiments and with reference to the accompanying drawings.

[0058] It should be noted that, unless otherwise defined, the technical terms or scientific terms used in the embodiments of the present application should be the usual meanings understood by people with ordinary skills in the field to which the present application belongs. The "first", "second" and similar words used in the embodiments of the present application do not represent any order, quantity or importance, but are only used to distinguish different components. "Including" or "comprising" and similar words mean that the elements or objects appearing in front of the word cover the elements or objects listed after the word and their equivalents, without excluding other elements or objects. "Connect" or "connected" and similar words are not limited to physical or mechanical connections, but can include electrical connections, whether direct or indirect. "Up", "down", "left", "right" and the like are only used to indicate relative positional relationships. When the absolute position of the described object changes, the relative positional relationship may also change accordingly.

[0059] As described in the background technology section, in the conventional units using the size-changing phase modulation technology in the related art, generally, an air layer with a thickness of one quarter wavelength needs to be inserted between two dielectric plates, resulting in a higher overall profile. In addition, the dielectric substrate has a large number of layers, resulting in a large dielectric loss problem, and the increase in the number of air layers has a very limited effect on the improvement of transmittance, which ultimately results in a low efficiency of the transmission array antenna, and the multi-layer dielectric substrate also increases the processing cost.

[0060] Based on the above considerations, the embodiment of the present application proposes a transmission array, a radiation unit, a transmission array antenna and an etching method. By setting the number of dielectric substrate layers of the radiation unit, setting the number and position of the air layer, setting the metal layer on each dielectric substrate of the radiation unit, and setting the position of the metal layer according to the phase compensation algorithm, the radiation unit adopts the rotation angle method phase modulation technology to reduce the radiation unit's dependence on the number and height of the air layer, thereby reducing the profile height, and finally obtaining a transmission array antenna with a larger bandwidth, higher transmission efficiency, high transmittance and low profile, so that the radiation unit has a low profile while ensuring high transmittance, so that its transmission efficiency is effectively improved, and because the number of dielectric substrate layers is reduced, the manufacturing cost is also effectively reduced. The metal layer of the radiation unit is etched by the phase compensation algorithm, so that the transmission array composed of at least one hundred radiation units has high gain and broadband characteristics, can maintain high transmittance in a wide frequency band, and achieve a 360° phase shift range. So that it can carry more information and improve transmission efficiency.

[0061] The technical solution of the present application is described in detail below through specific embodiments.

[0062] refer to Figure 1 , is a schematic diagram of the transmission array antenna of an embodiment of the present application.

[0063] Figure 1 The medium transmission array antenna is composed of a circularly polarized feed source 1 and a transmission array plane 2, wherein the transmission array plane 2 has at least one hundred radiation units 3 arranged closely.

[0064] A transmission array 2, comprising: at least one hundred closely arranged radiation units 3;

[0065] The radiation unit 3 includes: a first dielectric substrate 31 and a second dielectric substrate 32;

[0066] The orthographic projections of the first dielectric substrate 31 and the second dielectric substrate 32 overlap;

[0067] A cross-shaped metal layer 41 is etched on the first end surface of the first dielectric substrate 31;

[0068] A square embedded cross-shaped metal layer 42 is etched on the second end surface of the first dielectric substrate 31 opposite to the first end surface or the third end surface of the second dielectric substrate 32;

[0069] A rectangular metal layer 43 is etched on a fourth end surface of the second dielectric substrate 32 opposite to the third end surface; the rectangular metal layer 43 is provided with four inner chamfers 431;

[0070] The transmission array 2 is configured to determine the etching positions of the cross-shaped metal layer 41 , the square-embedded cross-shaped metal layer 42 , and the rectangular metal layer 43 according to a phase compensation algorithm.

[0071] refer to Figure 2 and Figure 3 , Figure 2 is a schematic diagram of the three-dimensional structure of the radiation unit in an embodiment of the present application, Figure 3 It is a schematic cross-sectional diagram of a radiation unit according to an embodiment of the present application.

[0072] Figure 3 The middle radiation unit 3 includes a first dielectric substrate 31 , a second dielectric substrate 32 , a third dielectric substrate 33 , a fourth dielectric substrate 34 and an air layer 5 .

[0073] It should be noted that the radiation unit 3 shown in this embodiment is composed of four layers of dielectric substrate and one air layer 5, but the present application can also achieve the corresponding technical effect when there are only two layers of dielectric substrate. This embodiment shows the optimal technical solution after testing.

[0074] Based on the same inventive concept, the embodiment of the present application further provides a radiation unit 3, including:

[0075] A first dielectric substrate 31 and a second dielectric substrate 32;

[0076] The orthographic projections of the first dielectric substrate 31 and the second dielectric substrate 32 overlap;

[0077] A cross-shaped metal layer 41 is etched on the first end surface of the first dielectric substrate 31;

[0078] A square embedded cross-shaped metal layer 42 is etched on the second end surface of the first dielectric substrate 31 opposite to the first end surface or the third end surface of the second dielectric substrate 32;

[0079] A rectangular metal layer 43 is etched on a fourth end surface of the second dielectric substrate 32 opposite to the third end surface; the rectangular metal layer 43 is provided with four inner chamfers 431;

[0080] The transmission array 2 is configured to determine the etching positions of the cross-shaped metal layer 41 , the square-embedded cross-shaped metal layer 42 , and the rectangular metal layer 43 according to a phase compensation algorithm.

[0081] In a possible implementation, the method further includes:

[0082] A third dielectric substrate 33 and a fourth dielectric substrate 34;

[0083] The orthographic projections of the third dielectric substrate 33 and the fourth dielectric substrate 34 overlap with the orthographic projections of the first dielectric substrate 31 and the second dielectric substrate 32;

[0084] The rectangular metal layer 43 is etched on the fifth end surface of the third dielectric substrate 33;

[0085] The square embedded cross-shaped metal layer 42 is etched on the sixth end face of the third dielectric substrate 33 opposite to the fifth end face or the seventh end face of the fourth dielectric substrate 34;

[0086] The cross-shaped metal layer 41 is etched on an eighth end surface of the fourth dielectric substrate 34 opposite to the seventh end surface.

[0087] In this embodiment, the cross-shaped metal layer 41 is etched on the upper surface of the first dielectric substrate 31 and the lower surface of the fourth dielectric substrate 34, the square embedded cross-shaped metal layer 42 is etched on the upper surface of the second dielectric substrate 32 and the lower surface of the third dielectric substrate 33, and the rectangular metal layer 43 is etched on the lower surface of the second dielectric substrate 32 and the upper surface of the third dielectric substrate 33.

[0088] It should be noted that the order of different metal layers can be interchanged, and the metal layer etching method shown in this embodiment is the optimal embodiment, and does not mean that the present application only has the above-mentioned implementation method.

[0089] In a possible implementation, the cross-shaped metal layer 41 is composed of two rectangular metal patches of the same shape and overlapping centers crossing at a preset angle; or the cross-shaped metal layer 41 is composed of two elliptical metal patches of the same shape and overlapping centers crossing at a preset angle;

[0090] refer to Figure 4 , is a schematic diagram of the cross-type metal layer of the radiation unit 3 of the embodiment of the present application. The cross-type metal layer 41 is composed of two rectangular metal patches of the same shape and overlapping centers crossing at a preset angle. The length of the rectangular metal patch is 2.3 mm and the width is 0.85 mm. It should be noted that the length and width shown in this embodiment are the optimal technical effect embodiments, and do not mean that the present application is limited to the use of rectangular metal patches, and the length and width thereof are not limited to the above dimensions.

[0091] The square-embedded cross-shaped metal layer 42 is composed of a square metal patch embedded in a cross-shaped structure, and the embedded cross-shaped structure is composed of a cross-shaped structure 421 and a square structure 422; the cross-shaped structure 421 overlaps with the center of the square structure 422, and the side of the square structure 422 is perpendicular or parallel to one arm of the cross-shaped structure 421; or the embedded cross-shaped structure is composed of a cross-shaped structure and a circular structure, and the circular structure overlaps with the center of the cross-shaped structure;

[0092] refer to Figure 5 , is a schematic diagram of a square-embedded cross-shaped metal layer of a radiation unit in an embodiment of the present application. The square-embedded cross-shaped metal layer 42 is composed of a square metal patch embedded in a cross-shaped structure, and the embedded cross-shaped structure is composed of a cross-shaped structure and a square structure. The arm length of the cross-shaped structure is 2.6 mm, and the arm width is 0.58 mm; the side length of the square structure is 2 mm.

[0093] It should be noted that the square embedded cross-shaped metal layer 42 shown in this embodiment is an embodiment with the best technical effect. The square structure can also be a prototype structure, and the sizes of the cross-shaped structure and the square structure are not limited to the sizes shown in the above embodiments.

[0094] The inner chamfer 431 of the rectangular metal layer 43 is a quarter of a circular structure or a triangular structure.

[0095] refer to Figure 6 , is a schematic diagram of a rectangular metal layer 43 of a radiation unit 3 of an embodiment of the present application. The rectangular metal layer 43 is composed of a rectangular inner chamfer 431, the width of the rectangular metal layer 43 is 1.7 mm, and the length is 2.8 mm; the inner chamfer 431 is a quarter-circular structure with a radius of 1 mm.

[0096] It should be noted that the rectangular metal layer 43 shown in this embodiment is an embodiment with the best technical effect, the inner chamfer 431 can also be a triangular structure, and the size of the rectangle and the inner chamfer 431 is not limited to the size shown in the above embodiment.

[0097] In a possible implementation, the radiation unit 3 further includes at least one air layer 5 .

[0098] The air layer 5 is disposed between the first dielectric substrate 31 and the second dielectric substrate 32 , between the second dielectric substrate 32 and the third dielectric substrate 33 , and / or between the third dielectric substrate 33 and the fourth dielectric substrate 34 .

[0099] In this embodiment, the thickness of the air layer 5 is 0.5 mm, and the air layer 5 is disposed between the second dielectric substrate 32 and the third dielectric substrate 33 .

[0100] It should be noted that the air layer 5 shown in this embodiment is an embodiment with the best technical effect. The thickness of the air layer 5 is not limited to 0.5 mm, and the number of air layers 5 can also be multiple.

[0101] Based on the same inventive concept, the embodiment of the present application further proposes a transmission array antenna, including:

[0102] A transmission array 2 and a circularly polarized feed source 1 opposite to the transmission array 2;

[0103] The transmission array 2 includes at least one hundred closely arranged radiation units 3 according to any one of claims 2 to 5 .

[0104] refer to Figure 1 , is a schematic diagram of the transmission array antenna of an embodiment of the present application.

[0105] Figure 1 The medium transmission array antenna is composed of a circularly polarized feed source 1 and a transmission array plane 2, wherein the transmission array plane 2 has at least one hundred radiation units 3 arranged closely.

[0106] Based on the same inventive concept, the embodiment of the present application further proposes an etching method for the metal layer of the radiation unit 3, comprising:

[0107] Get the transmission array antenna parameters;

[0108] According to the transmission array antenna parameters, the etching positions of the cross-shaped metal layer 41, the square embedded cross-shaped metal layer 42 and the rectangular metal layer 43 of each radiation unit 3 of the transmission array face 2 are obtained by a phase compensation algorithm;

[0109] The radiation unit 3 is etched according to the etching position.

[0110] In a possible implementation, the phase compensation formula includes:

[0111] A phase compensation algorithm for generating a single vortex electromagnetic wave beam and a phase compensation algorithm for generating multiple vortex electromagnetic wave beams.

[0112] In a possible implementation, the phase compensation algorithm for generating a single vortex electromagnetic wave beam is specifically:

[0113]

[0114] l=0,±1,±2…

[0115] Among them, φ mn represents the phase compensation required by the radiating element in the mth row and nth column, represents the position vector of the radiation unit in the mth row and nth column on the transmission array, Represents the vector from the phase center of the circularly polarized feed source adapted to the transmission array antenna to the center of the transmission array plane, represents the desired direction of the vortex beam carrying OAM, l represents the desired OAM mode, Indicates the azimuth angle corresponding to the radiation unit in the mth row and nth column.

[0116] In a possible implementation, the phase compensation algorithm for generating multiple vortex electromagnetic wave beams is specifically:

[0117]

[0118] in, represents the phase compensation required by the radiating element in the mth row and nth column, k represents the number of beams, k0 represents the wave number in free space corresponding to the operating frequency, represents the position vector of the radiation unit in the mth row and nth column on the transmission array, Represents the vector from the phase center of the circularly polarized feed source adapted to the transmission array antenna to the center of the transmission array plane, is the direction of the i-th beam, l i represents the OAM mode of the ith beam, Represents the azimuth angle of the radiation element in the mth row and nth column on the normal plane of the i-th beam.

[0119] In this embodiment, the following formula is used to calculate

[0120]

[0121] Among them, x imn It represents the horizontal coordinate of the mnth unit on the normal plane of the i-th beam, y imn It represents the ordinate of the mn-th element on the normal plane of the i-th beam.

[0122] In this embodiment, by calculating the etching position of the metal layer of each radiation unit of the transmission array through a phase compensation algorithm, the left-handed / right-handed circularly polarized incident wave can be effectively converted into a right-handed / left-handed circularly polarized vortex electromagnetic wave carrying OAM. Vortex electromagnetic waves carrying different OAM modes can be transmitted at the same frequency and at the same time without interfering with each other. Therefore, under the same spectrum resource conditions, vortex electromagnetic waves can carry more information. It can improve spectrum efficiency and communication capacity in the field of communications, and can improve the resolution of radar in the field of radar imaging.

[0123] refer to Figure 7 The transmission coefficient, reflection coefficient and frequency curve of the embodiment of the present application are shown in FIG. The horizontal axis is the frequency, the vertical axis is the amplitude, and t LR represents the transmission coefficient amplitude of left-handed incident and right-handed outgoing, t LL represents the transmission coefficient amplitude of left-handed incident and left-handed outgoing, r LL The magnitude of the left-handed reflection coefficient for a left-handed incident reflection, r LR It represents the magnitude of the reflection coefficient of the right-handed reflection for a left-handed incident object.

[0124] from Figure 7 It can be seen that when the center frequency is 32.5 GHz, the -1dB bandwidth is 8.4 GHz, covering the frequency band range of 28.3 GHz-36.7 GHz, and the relative bandwidth is 25.9%, indicating that the radiation unit has the characteristics of broadband and high transmittance.

[0125] refer to Figure 8 The transmission coefficient amplitude and phase curves of the embodiment of the present application at different incident angles are shown in FIG. The horizontal axis is the rotation angle, the left vertical axis is the amplitude, and the right vertical axis is the phase.

[0126] from Figure 8 It can be seen that at the center frequency of 32.5 GHz, when the incident angle is less than 30 degrees, the phase curves almost overlap, and the transmission coefficient amplitudes are all less than -1 dB, indicating that the radiation unit has the characteristic of being insensitive to the incident angle.

[0127] It can be seen from the above embodiments that the transmission array, radiation unit, transmission array antenna and etching method described in the embodiments of the present application are finally obtained by setting the number of dielectric substrate layers of the radiation unit, setting the number and position of the air layer, setting the metal layer on each dielectric substrate of the radiation unit, and setting the position of the metal layer according to the phase compensation algorithm. A transmission array antenna with a larger bandwidth, higher transmission efficiency, high transmittance and low profile is obtained. For the radiation unit, the setting of the number of its dielectric substrates, the setting of the metal layer on the dielectric substrate and the setting of the air layer ensure that the radiation unit has a low profile while ensuring high transmittance, so that its transmission efficiency is effectively improved. In addition, the metal layer of the radiation unit is etched using a phase compensation algorithm, so that the transmission array composed of at least one hundred radiation units has high gain and broadband characteristics, can maintain high transmittance in a wide frequency band, and achieve a phase shift range of 360°. In addition, it is possible to effectively convert left-handed / right-handed circularly polarized incident waves into right-handed / left-handed circularly polarized vortex electromagnetic waves in a broadband range, so that it can carry more information and improve transmission efficiency.

[0128] Compared with the prior art, the transmission array of the present application has a lower cross-section, higher transmittance, larger bandwidth and higher transmission efficiency.

[0129] It should be noted that the method of the embodiment of the present application can be performed by a single device, such as a computer or server. The method of this embodiment can also be applied to a distributed scenario and completed by multiple devices cooperating with each other. In the case of such a distributed scenario, one of the multiple devices can only perform one or more steps in the method of the embodiment of the present application, and the multiple devices will interact with each other to complete the described method.

[0130] It should be noted that the above describes some embodiments of the present application. Other embodiments are within the scope of the appended claims. In some cases, the actions or steps recorded in the claims can be performed in an order different from that in the above embodiments and still achieve the desired results. In addition, the processes depicted in the accompanying drawings do not necessarily require the specific order or continuous order shown to achieve the desired results. In some embodiments, multitasking and parallel processing are also possible or may be advantageous.

[0131] Those skilled in the art should understand that the discussion of any of the above embodiments is merely illustrative and is not intended to imply that the scope of the present application (including the claims) is limited to these examples. In line with the concept of the present application, the technical features in the above embodiments or different embodiments may be combined, the steps may be implemented in any order, and there are many other variations of the different aspects of the embodiments of the present application as described above, which are not provided in detail for the sake of simplicity.

[0132] In addition, to simplify the description and discussion, and in order not to make the embodiments of the present application difficult to understand, the known power supply / ground connection with the integrated circuit (IC) chip and other components may or may not be shown in the provided drawings. In addition, the device can be shown in the form of a block diagram to avoid making the embodiments of the present application difficult to understand, and this also takes into account the fact that the details of the implementation of these block diagram devices are highly dependent on the platform to be implemented in the embodiments of the present application (that is, these details should be fully within the scope of understanding of those skilled in the art). In the case of elaborating specific details (e.g., circuits) to describe exemplary embodiments of the present application, it is obvious to those skilled in the art that the embodiments of the present application can be implemented without these specific details or when these specific details are changed. Therefore, these descriptions should be considered to be illustrative rather than restrictive.

[0133] Although the present application has been described in conjunction with specific embodiments of the present application, many replacements, modifications and variations of these embodiments will be apparent to those skilled in the art from the foregoing description. For example, other memory architectures (e.g., dynamic RAM (DRAM)) may use the embodiments discussed.

[0134] The embodiments of the present application are intended to cover all such substitutions, modifications and variations that fall within the broad scope of the appended claims. Therefore, any omissions, modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the embodiments of the present application should be included in the scope of protection of the present application.

Claims

1. A transmission array, characterized in that: include: At least one hundred closely spaced radiating elements; The radiation unit comprises: a first dielectric substrate and a second dielectric substrate; The orthographic projections of the first dielectric substrate and the second dielectric substrate overlap; A cross-shaped metal layer is etched on the first end surface of the first dielectric substrate; A square embedded cross-shaped metal layer is etched on a second end surface of the first dielectric substrate opposite to the first end surface or a third end surface of the second dielectric substrate; A rectangular metal layer is etched on a fourth end surface of the second dielectric substrate opposite to the third end surface; the rectangular metal layer is provided with four inner chamfers; The transmission array is configured to determine the etching positions of the cross-shaped metal layer, the square-embedded cross-shaped metal layer and the rectangular metal layer according to a phase compensation algorithm; The radiation unit also includes: a third dielectric substrate and a fourth dielectric substrate; The orthographic projections of the third dielectric substrate and the fourth dielectric substrate overlap with the orthographic projections of the first dielectric substrate and the second dielectric substrate; The rectangular metal layer is etched on the fifth end surface of the third dielectric substrate; The square-embedded cross-shaped metal layer is etched on a sixth end face of the third dielectric substrate opposite to the fifth end face or a seventh end face of the fourth dielectric substrate; The cross-shaped metal layer is etched on an eighth end surface of the fourth dielectric substrate opposite to the seventh end surface.

2. A radiation unit, characterized in that: include: a first dielectric substrate and a second dielectric substrate; The orthographic projections of the first dielectric substrate and the second dielectric substrate overlap; A cross-shaped metal layer is etched on the first end surface of the first dielectric substrate; A square embedded cross-shaped metal layer is etched on a second end surface of the first dielectric substrate opposite to the first end surface or a third end surface of the second dielectric substrate; A rectangular metal layer is etched on a fourth end surface of the second dielectric substrate opposite to the third end surface; the rectangular metal layer is provided with four inner chamfers; The radiation unit also includes: a third dielectric substrate and a fourth dielectric substrate; The orthographic projections of the third dielectric substrate and the fourth dielectric substrate overlap with the orthographic projections of the first dielectric substrate and the second dielectric substrate; The rectangular metal layer is etched on the fifth end surface of the third dielectric substrate; The square-embedded cross-shaped metal layer is etched on a sixth end face of the third dielectric substrate opposite to the fifth end face or a seventh end face of the fourth dielectric substrate; The cross-shaped metal layer is etched on an eighth end surface of the fourth dielectric substrate opposite to the seventh end surface.

3. The radiation unit according to claim 2, characterized in that: The cross-shaped metal layer is composed of two rectangular metal patches of the same shape and overlapping centers crossing at a preset angle; or the cross-shaped metal layer is composed of two elliptical metal patches of the same shape and overlapping centers crossing at a preset angle; The square-embedded cross-shaped metal layer is composed of a square metal patch embedded in a cross-shaped structure, and the embedded cross-shaped structure is composed of a cross-shaped structure and a square structure; the cross-shaped structure overlaps with the center of the square structure, and the side of the square is perpendicular or parallel to one arm of the cross-shaped structure; or the embedded cross-shaped structure is composed of a cross-shaped structure and a circular structure, and the circular structure overlaps with the center of the cross-shaped structure; The inner chamfer of the rectangular metal layer is a quarter circular structure or a triangular structure.

4. The radiation unit according to claim 2, characterized in that: The radiation unit further comprises at least one air layer; The air layer is disposed between the first dielectric substrate and the second dielectric substrate, between the second dielectric substrate and the third dielectric substrate, and / or between the third dielectric substrate and the fourth dielectric substrate.

5. A transmission array antenna, characterized in that: include: A transmission array and a circularly polarized feed source opposite to the transmission array; The transmission array comprises at least one hundred closely arranged radiation units according to any one of claims 2 to 4.

6. A method for etching a metal layer of a radiation unit according to any one of claims 2 to 4, characterized in that: include: Get the transmission array antenna parameters; According to the transmission array antenna parameters, the etching positions of the cross-shaped metal layer, the square embedded cross-shaped metal layer and the rectangular metal layer of each radiation unit of the transmission array are obtained by a phase compensation algorithm; The radiation unit is etched according to the etching position.

7. The method according to claim 6, characterized in that The phase compensation formula includes: A phase compensation algorithm for generating a single vortex electromagnetic wave beam and a phase compensation algorithm for generating multiple vortex electromagnetic wave beams.

8. The method according to claim 7, characterized in that The phase compensation algorithm for generating a single vortex electromagnetic wave beam is specifically as follows: in, represents the phase compensation required by the radiating element in the mth row and nth column, represents the wave number in free space corresponding to the operating frequency, represents the position vector of the radiation unit in the mth row and nth column on the transmission array, Represents the vector from the phase center of the circularly polarized feed source adapted to the transmission array antenna to the center of the transmission array plane, represents the desired direction of the vortex beam carrying OAM, represents the desired OAM mode, Represents the azimuth angle of the radiating element in the mth row and nth column on the normal plane of the beam.

9. The method according to claim 7, characterized in that: The phase compensation algorithm for generating multiple vortex electromagnetic wave beams is specifically: in, represents the phase compensation required by the radiating element in the mth row and nth column, represents the number of beams, represents the wave number in free space corresponding to the operating frequency, represents the position vector of the radiation unit in the mth row and nth column on the transmission array, Represents the vector from the phase center of the circularly polarized feed source adapted to the transmission array antenna to the center of the transmission array plane, For the The direction of the beam, It means the The OAM mode of the beam, The radiation unit representing the mth row and nth column is The azimuth of the beam in the normal plane.

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