A terahertz signal detection device and a method for preparing the same

Abstract

The present invention provides a terahertz signal detection device and a preparation method thereof, comprising: a substrate; a first electrode formed on the substrate and located on one side of the substrate. A second electrode formed on the substrate and symmetrically arranged with the first electrode about the center of the substrate. A first semiconductor layer is formed between the first electrode and the second electrode and connects the first electrode and the second electrode. An insulating layer is formed on the first semiconductor layer. A third electrode is formed on the insulating layer and located on one side of the insulating layer. A fourth electrode is formed on the insulating layer and symmetrically arranged with the third electrode about the center of the substrate. A second semiconductor layer is formed between the third electrode and the fourth electrode and connects the third electrode and the fourth electrode. The center line of the first electrode and the second electrode is perpendicular to the center line of the third electrode and the fourth electrode. The terahertz signal detection device and the preparation method thereof provided by the present invention have novel structure, simple preparation, and production and application value.

Description

Technical Field

[0001] The present invention relates to the field of detection technology, and in particular to a terahertz signal detection device and a preparation method thereof. Background Art

[0002] Terahertz waves are electromagnetic waves with a frequency range of 0.1 to 10 THz, which can cover the characteristic spectra of semiconductors, organisms, biomacromolecules, etc. Due to the low output power of terahertz radiation sources and the high thermal radiation background noise in the terahertz frequency range, various terahertz detection devices need to complement each other in different applicable environments and working ranges.

[0003] Terahertz signal detection technology is divided into coherent pulse time domain continuous wave detection technology and incoherent direct energy detection technology. Terahertz signal detection technology based on incoherent technology absorbs thermal radiation energy for detection, and generally can only measure the intensity of terahertz radiation, but cannot provide its phase information. Summary of the invention

[0004] In view of the above-mentioned defects of the prior art, the present invention proposes a terahertz signal detection device and a preparation method thereof, which improves the absorption rate of the detection device to infrared and terahertz radiation, thereby achieving the advantages of polarization insensitivity, fast response, high sensitivity, wide bandwidth, low signal-to-noise ratio and room temperature working environment, thereby improving work efficiency.

[0005] To achieve the above and other purposes, the present invention provides a terahertz signal detection device, comprising:

[0006] substrate;

[0007] A first electrode is formed on the substrate and is located on one side of the substrate;

[0008] A second electrode is formed on the substrate and is symmetrically arranged with the first electrode about the center of the substrate;

[0009] a first semiconductor layer formed between the first electrode and the second electrode and connecting the first electrode and the second electrode;

[0010] an insulating layer formed on the first semiconductor layer;

[0011] a third electrode formed on the insulating layer and located on one side of the insulating layer;

[0012] a fourth electrode, formed on the insulating layer and arranged symmetrically with the third electrode about the center of the substrate;

[0013] a second semiconductor layer formed between the third electrode and the fourth electrode and connecting the third electrode and the fourth electrode;

[0014] The center line connecting the first electrode and the second electrode is perpendicular to the center line connecting the third electrode and the fourth electrode.

[0015] In one embodiment of the present invention, the substrate includes a silicon-based base and a base covering layer, and the base covering layer covers the upper surface of the silicon-based base.

[0016] In one embodiment of the present invention, the first electrode, the second electrode, the third electrode and the fourth electrode are arranged in a fan shape.

[0017] In one embodiment of the present invention, the first electrode, the second electrode, the third electrode and the fourth electrode have the same structure and size.

[0018] In one embodiment of the present invention, the radius of the first electrode is in the range of 80 μm-120 μm.

[0019] In one embodiment of the present invention, the opening angle of the first electrode is in the range of 60°-90°.

[0020] In one embodiment of the present invention, the thickness of the first electrode is in the range of 20 nm-300 nm.

[0021] In one embodiment of the present invention, the orthographic projections of the first electrode, the second electrode, the third electrode and the fourth electrode on the substrate do not overlap.

[0022] In one embodiment of the present invention, the insulating layer covers the first semiconductor layer.

[0023] The present invention also provides a method for preparing a terahertz signal detection device, comprising:

[0024] providing a substrate;

[0025] forming a first electrode on the substrate, located on one side of the substrate;

[0026] forming a second electrode on the substrate, which is symmetrically arranged with respect to the center of the substrate with respect to the first electrode;

[0027] forming a first semiconductor layer between the first electrode and the second electrode to connect the first electrode and the second electrode;

[0028] forming an insulating layer on the first semiconductor layer;

[0029] forming a third electrode on the insulating layer, located on one side of the insulating layer;

[0030] forming a fourth electrode on the insulating layer, the fourth electrode being symmetrically arranged with respect to the center of the substrate with respect to the third electrode;

[0031] forming a second semiconductor layer between the third electrode and the fourth electrode to connect the third electrode and the fourth electrode;

[0032] The center line connecting the first electrode and the second electrode is perpendicular to the center line connecting the third electrode and the fourth electrode.

[0033] In summary, the present invention proposes a terahertz signal detection device and a preparation method thereof, which have the following beneficial effects: the antenna is designed into a special vertical cross structure, which improves the response time and achieves high sensitivity, wide bandwidth and low signal-to-noise ratio of the detection device. Compared with the traditional field effect structure, the terahertz signal detection device provided by the present invention has a novel structure, excellent performance, simple preparation, and can work in the infrared and terahertz bands. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0035] Figure 1 Schematic diagram of a log-periodic antenna.

[0036] Figure 2 This is the longitudinal cross-section of the log-periodic antenna.

[0037] Figure 3 This is a top view of the log-periodic antenna.

[0038] Figure 4 Schematic diagram of the log-periodic antenna angle.

[0039] Figure 5 This is a local enlarged view of the center of the log-periodic antenna channel.

[0040] Figure 6 This is a top view of the butterfly antenna.

[0041] Figure 7 This is a top view of the strip antenna.

[0042] Figure 8 The figure is a flow chart of the preparation process.

[0043] Fig. 9 This is the local electric field enhancement diagram of the log-periodic antenna channel obtained by electromagnetic simulation.

[0044] Fig.10 This is the local electric field enhancement diagram of the butterfly antenna channel obtained by electromagnetic simulation.

[0045] Fig.11 This is the local electric field enhancement diagram of the strip antenna channel obtained by electromagnetic simulation.

[0046] Description of labels:

[0047] 1 detection device; 2 substrate; 21 silicon base; 22 silicon dioxide layer; 3 first electrode; 4 second electrode; 5 first semiconductor layer; 6 insulating layer; 7 third electrode; 8 fourth electrode; 9 second semiconductor layer. DETAILED DESCRIPTION

[0048] The following describes the embodiments of the present invention through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and the details in this specification can also be modified or changed in various ways based on different viewpoints and applications without departing from the spirit of the present invention.

[0049] It should be noted that the illustrations provided in this embodiment are only used to illustrate the basic concept of the present invention in a schematic manner. Therefore, the drawings only show components related to the present invention rather than being drawn according to the number, shape and size of components in actual implementation. In actual implementation, the type, quantity and proportion of each component may be changed arbitrarily, and the component layout may also be more complicated.

[0050] The present invention proposes a terahertz signal detection device and a preparation method thereof, wherein the antenna is designed into a special vertical cross structure, which improves the response time and realizes high sensitivity, wide bandwidth and low signal-to-noise ratio of the detection device. Compared with the traditional field effect structure, it has excellent performance, simple preparation and can work in the infrared and terahertz bands.

[0051] See also Figure 1 In one embodiment of the present invention, the terahertz signal detection device includes a substrate 2, and the substrate 2 includes, for example, a silicon-based base 21 and a base covering layer 22. The silicon-based base 21 can be a rectangular parallelepiped structure, which is arranged at the bottom as a support. The bottom surface of the base covering layer 22 is in contact with the upper surface of the silicon-based base 21. The base covering layer 22 can completely cover the upper surface of the silicon-based base 21. The thickness range of the substrate 2 is, for example, 50μm-500μm. The material of the substrate 2 can be high-resistance silicon, silicon carbide, quartz, glass resin, sapphire, polyimide, etc., and the base covering layer can be set to a silicon dioxide layer with a thickness range of 100nm-300nm.

[0052] See also Figure 1-Figure 5In one embodiment of the present invention, the first electrode 3 is formed on the substrate 2. The first electrode 3 is arranged on the upper surface of the substrate 2 and contacts the base cover layer 22. The first electrode 3 is arranged on one side of the upper surface of the substrate 2 as a signal antenna. The first electrode can be a logarithmic periodic antenna, and its shape can be a sector. The sector is divided into three equal parts about the center of the sector, and the two outer sectors are staggered with gaps along different radius lengths. The second electrode 4 is formed on the substrate 2 and is symmetrically arranged with the first electrode 3 about the center of the substrate 2. The antenna composed of the first electrode 3 and the second electrode 4 can be perpendicular to the side of the upper surface of the substrate 2, or form a certain angle with the side of the upper surface of the substrate 2. The first electrode 3 and the second electrode 4 are manufactured by photolithography technology and thin film manufacturing technology, and the structure, size and material of the second electrode 4 can be the same as those of the first electrode 3. The material of the second electrode 4 can be a combination of titanium (Ti) and gold (Au) or one of them. The thickness of the first electrode 3 is, for example, in the range of 20 nm-300 nm, the radius is, for example, in the range of 80 μm-120 μm, the opening angle θ1 is, for example, in the range of 60°-90°, and the scale factor τ is, for example, in the range of 0.707-0.8.

[0053] See also Figure 6 In one embodiment of the present invention, the first electrode 3 may also be a butterfly antenna structure. The first electrode 3 may be fan-shaped, and the second electrode 4 is formed on the substrate 2 and is symmetrically arranged with the first electrode 3 about the center of the substrate 2. The longest dimension of the antenna formed by the first electrode 3 and the second electrode 4 in the horizontal direction is smaller than the length of each side of the substrate 2. The antenna formed by the first electrode 3 and the second electrode 4 may be perpendicular to the side of the upper surface of the substrate 2, or form a certain angle with the side of the upper surface of the substrate 2. The first electrode 3 and the second electrode 4 are manufactured by photolithography technology and thin film manufacturing technology, and the structure, size and material of the second electrode 4 may be the same as those of the first electrode 3. The material of the second electrode 4 may be a combination of titanium (Ti) and gold (Au) or one of them. The thickness of the first electrode 3 is, for example, in the range of 20nm-300nm, the radius is, for example, in the range of 80μm-120μm, and the opening angle θ2 is, for example, in the range of 30°-90°.

[0054] See also Figure 7In one embodiment of the present invention, the first electrode 3 may also be a strip antenna structure, and the first electrode 3 may be a long strip. A funnel-shaped contraction structure is formed near the center of the substrate 2. The length of the first electrode 3 is less than half the length of each side of the substrate 2. The second electrode 4 is formed on the substrate 2 and is symmetrically arranged with the first electrode 3 about the center of the substrate 2. The antenna composed of the first electrode 3 and the second electrode 4 may be perpendicular to the side of the upper surface of the substrate 2, or form a certain angle with the side of the upper surface of the substrate 2. The first electrode 3 and the second electrode 4 are manufactured by photolithography technology and thin film manufacturing technology, and the structure, size and material of the second electrode 4 may be the same as those of the first electrode 3. The material of the second electrode 4 may be a combination of titanium (Ti) and gold (Au) or one of them. The thickness of the first electrode 3 ranges from 20nm to 300nm, for example.

[0055] See also Figure 1-Figure 5 In one embodiment of the present invention, the first semiconductor layer 5 is formed between the first electrode 3 and the second electrode 4, and connects the first electrode 3 and the second electrode 4. The first semiconductor layer 5 connects the first electrode 3 and the second electrode 4 respectively by different channel structures, such as Figure 5 As shown. The two-dimensional material transfer platform is used to transfer the first semiconductor layer 5 two-dimensional material to the first electrode 3 and the second electrode 4 through thin film transfer technology. The material of the first semiconductor layer 5 can be molybdenum disulfide / graphene, tungsten disulfide / graphene, molybdenum diselenide / graphene and other materials.

[0056] See also Figure 1-Figure 5 In one embodiment of the present invention, an insulating layer 6 is formed on the first semiconductor layer 5. The insulating layer 6 covers the first semiconductor layer 5. The channel region of the first semiconductor layer 5 is patterned by electron beam lithography to form a patterned insulating layer 6 region. The patterned substrate 2 is immersed in deionized water, the residual developer is washed away, and the solid film is dried. The insulating layer 6 is grown in the patterned area. In this embodiment, the atomic layer deposition method and magnetron sputtering method in the thin film manufacturing technology are used. For example, an ALD device can be used to form a film at 150°C to form the insulating layer 6. The insulating layer 6 can be made of materials such as silicon dioxide, hafnium dioxide, aluminum oxide, and boron nitride. The thickness of the insulating layer 6 ranges from 20nm to 300nm, for example.

[0057] See also Figure 1-Figure 5In one embodiment of the present invention, the third electrode 7 is formed on the insulating layer 6 and is located on one side of the insulating layer 6. The fourth electrode 8 is formed on the insulating layer 6 and is symmetrically arranged with the third electrode 7 about the center of the substrate 2. The structure, size and material of the third electrode 7 and the fourth electrode 8 can be the same as those of the first electrode 3 and the second electrode 4. The third electrode 7 and the fourth electrode 8 are manufactured by photolithography technology and thin film manufacturing technology, and the center line of the first electrode 3 and the second electrode 4 is perpendicular to the center line of the third electrode 7 and the fourth electrode 8. The third electrode 7 and the fourth electrode 8 can be a logarithmic periodic antenna, a butterfly antenna structure, or a strip antenna structure.

[0058] See also Figure 1-Figure 5 In one embodiment of the present invention, the second semiconductor layer 9 is formed between the third electrode 7 and the fourth electrode 8, and connects the third electrode 7 and the fourth electrode 8. The second semiconductor layer 9 is connected to the third electrode 7 and the fourth electrode 8 by different channel structures, such as Figure 5 As shown. The second semiconductor layer 9 two-dimensional material is transferred to the third electrode 7 and the fourth electrode 8 by thin film transfer technology using a two-dimensional material transfer platform. The material of the second semiconductor layer 9 can be molybdenum disulfide / graphene, tungsten disulfide / graphene, molybdenum diselenide / graphene and the like.

[0059] See also Figure 9-11 In one embodiment of the present invention, different vertically crossed antenna structures are designed in this embodiment. The results of the electromagnetic simulation directional diagram can be used to determine whether the design meets the requirements, and the infrared and terahertz waves can be gathered by using the super hemispherical lens. The infrared and terahertz waves are coupled to the detection area as much as possible, such as Figure 9-11 As shown, the simulation results of different antenna structures show that the designed different antenna structures can meet the technical requirements.

[0060] The present invention also provides a method for preparing a terahertz signal detection device, comprising the following steps:

[0061] S1. providing a substrate;

[0062] S2, forming a first electrode on the substrate, located on one side of the substrate;

[0063] S3, forming a second electrode on the substrate, which is symmetrically arranged with respect to the center of the substrate with respect to the first electrode;

[0064] S4, forming a first semiconductor layer between the first electrode and the second electrode to connect the first electrode and the second electrode;

[0065] S5, forming an insulating layer on the first semiconductor layer;

[0066] S6, forming a third electrode on the insulating layer, located on one side of the insulating layer; forming a fourth electrode on the insulating layer, symmetrically arranged with the third electrode about the center of the substrate;

[0067] S7. Form a second semiconductor layer between the third electrode and the fourth electrode to connect the third electrode and the fourth electrode; wherein a center line connecting the first electrode and the second electrode is perpendicular to a center line connecting the third electrode and the fourth electrode.

[0068] See also Figure 8 In one embodiment of the present invention, a tin diselenide / graphene heterojunction is used as the material of the first semiconductor layer 5, and a logarithmic periodic antenna is used as the first electrode 3. In step S1 of this embodiment, a substrate 2 is provided, and the substrate 2 is cleaned, for example, by using a stripping cleaning device and an ultrasonic device. The substrate 2 can be ultrasonically cleaned multiple times using acetone, ethanol, and deionized water, and the ultrasonic time range for each time is, for example, 10-15 minutes.

[0069] See also Figure 8 In one embodiment of the present invention, in step S2, nitrogen is used to remove moisture from the substrate 2 and dry it, and a positive photoresist is spin-coated on the substrate 2 using a spin coater. To ensure that the photoresist film is flat and free of bubbles, the rotation speed used in the spin coating process is, for example, 3000 rpm. After coating, it is heated on a high-temperature hot stage at, for example, 100°C for 10-15 minutes to evaporate the volatile part of the photoresist to form a solidified photoresist film on the substrate 2. A corresponding mask is used to cover the substrate 2 coated with the photoresist, and the photolithography process can be achieved, for example, using an ultraviolet exposure machine. The working wavelength range used is, for example, 350-450nm, and the graphic resolution is, for example, 0.2μm. Ultraviolet light is irradiated on the substrate 2 placed directly below the mask through the pattern area in the preset mask, and reacts with the positive photoresist exposed to ultraviolet light. The exposed photoresist area is washed away with a corresponding developer to form a patterned first electrode 3 area. Finally, the patterned substrate 2 is immersed in deionized water, the residual developer is washed off, and the solid film is dried. After the solid film is dried, the pattern area is plated. In this embodiment, for example, a magnetron sputtering method in thin film manufacturing technology is used. For example, a magnetron sputtering instrument can be used to generate incident ions using low-pressure inert gas glow power generation. The cathode target is made of a coating material, and the substrate serves as an anode. Argon or other inert gases with a pressure range of, for example, 0.1-10Pa are introduced into the vacuum chamber, and a voltage range of, for example, 1-3kV DC negative high voltage or a frequency of, for example, 13.56MHz radio frequency voltage is added to the cathode (target) to generate a glow discharge. The ionized argon ions bombard the target surface, causing the target atoms to sputter and deposit on the substrate to form a thin film, thereby obtaining a first electrode 3.

[0070] See also Figure 8 In one embodiment of the present invention, in step S3, a second electrode 4 is obtained, and a patterning process of the second electrode 4 is performed. The patterning process used in this embodiment may include one of ordinary ultraviolet lithography, electron beam lithography, atomic layer deposition, thermal evaporation, and magnetron sputtering. In this implementation, for example, electron beam lithography is used to pattern the electrode. A positive photoresist is spin-coated on the substrate 2 using a spin coater. To ensure that the prepared photoresist film is flat and free of bubbles, the rotation speed used in the spin coating process is, for example, 3000 rpm. After coating, it is heated on a high-temperature hot stage at, for example, 100°C for 10-15 minutes to evaporate the volatile part of the photoresist to form a cured photoresist film on the substrate 2. The corresponding mask is used to cover the substrate 2 coated with the photoresist, and the photolithography process can be implemented, for example, using an ultraviolet exposure machine. The working wavelength range used is, for example, 350-450nm, and the graphic resolution is, for example, 0.2μm. Ultraviolet light is irradiated on the substrate 2 placed directly below the mask through the pattern area in the preset mask, and reacts with the positive photoresist exposed to ultraviolet light. The exposed photoresist area is washed away with the corresponding developer to form a patterned second electrode 4 area. Finally, the patterned substrate 2 is immersed in deionized water, the residual developer is washed away, and the film is dried. After the film is dried, the pattern area is plated. In this embodiment, for example, a magnetron sputtering method in thin film manufacturing technology is used. For example, a magnetron sputtering instrument can be used to generate incident ions using low-pressure inert gas glow power generation. The cathode target is made of a coating material, and the substrate serves as an anode. Argon or other inert gases with a pressure range of, for example, 0.1-10Pa are introduced into the vacuum chamber, and a voltage range of, for example, 1-3kV DC negative high voltage or a frequency of, for example, 13.56MHz radio frequency voltage is added to the cathode (target) to generate a glow discharge. The ionized argon ions bombard the target surface, causing the target atoms to sputter and deposit on the substrate to form a thin film, thereby obtaining the second electrode 4.

[0071] See also Figure 8 In one embodiment of the present invention, in step S4, a two-dimensional material transfer platform is used to form the first semiconductor layer 5, and the material of the first semiconductor layer 5 is transferred to the first electrode 3 and the second electrode 4.

[0072] See also Figure 8In one embodiment of the present invention, in step S5, an insulating layer 6 is obtained on the basis of step S4, and a patterning process of the insulating layer 6 is performed. In the implementation, for example, electron beam lithography is used to pattern the channel region of the first semiconductor layer 5. For example, the same steps as in step S2 are used to form a patterned insulating layer 6 region. The patterned substrate 2 is immersed in deionized water, the residual developer is washed away, and the film is dried. After the film is dried and solidified, the insulating layer 6 needs to be grown in the pattern region. Thus, the insulating layer 6 is formed.

[0073] See also Figure 8 In one embodiment of the present invention, in step S6, a third electrode 7 and a fourth electrode 8 are formed on the insulating layer 6. Specifically, after drying and solidifying the film, the insulating layer 6 needs to be grown in the pattern area. In this embodiment, for example, the atomic layer deposition method and the magnetron sputtering method in the thin film manufacturing technology are used. For example, the ALD device can be used to form a film at 150°C. And in step S7, a second semiconductor layer 9 is formed between the third electrode 7 and the fourth electrode 8, and the third electrode 7 and the fourth electrode 8 are connected to obtain a terahertz signal detection device 1.

[0074] In summary, the present invention has the following beneficial effects: the antenna is designed into a special vertical cross structure, and a heterojunction formed by graphene or boron nitride with excellent electrical properties and some two-dimensional materials, such as tin diselenide / graphene heterojunction, is used to improve the response time and achieve high sensitivity, wide bandwidth and low signal-to-noise ratio of the detection device. Compared with the traditional field effect structure, the device has a novel structure, excellent performance, simple preparation, can work in the infrared and terahertz bands, and is easy to mass produce.

[0075] The above description is only a preferred embodiment of the present application and an explanation of the technical principles used. Those skilled in the art should understand that the scope of the invention involved in the present application is not limited to the technical solution formed by a specific combination of the above-mentioned technical features, but should also cover other technical solutions formed by any combination of the above-mentioned technical features or their equivalent features without departing from the inventive concept, such as a technical solution formed by replacing the above-mentioned features with (but not limited to) technical features with similar functions disclosed in this application.

[0076] Except for the technical features described in the specification, the remaining technical features are known technologies to those skilled in the art. In order to highlight the innovative features of the present invention, the remaining technical features will not be described here in detail.

Claims

1. A terahertz signal detection device, characterized in that: include: substrate; A first electrode is formed on the substrate and is located on one side of the substrate; A second electrode is formed on the substrate and is symmetrically arranged with the first electrode about the center of the substrate; a first semiconductor layer formed between the first electrode and the second electrode and connecting the first electrode and the second electrode; an insulating layer formed on the first semiconductor layer; a third electrode formed on the insulating layer and located on one side of the insulating layer; a fourth electrode, formed on the insulating layer and arranged symmetrically with the third electrode about the center of the substrate; a second semiconductor layer formed between the third electrode and the fourth electrode and connecting the third electrode and the fourth electrode; Wherein, the first electrode is arranged on one side of the upper surface of the substrate as a signal antenna; The first electrode, the second electrode, the third electrode and the fourth electrode have the same structure and size; The orthographic projections of the first electrode, the second electrode, the third electrode and the fourth electrode on the substrate do not overlap; A line connecting the centers of the first electrode and the second electrode is perpendicular to a line connecting the centers of the third electrode and the fourth electrode.

2. The terahertz signal detection device according to claim 1, characterized in that: The substrate comprises a silicon-based base and a base covering layer, and the base covering layer covers the upper surface of the silicon-based base.

3. The terahertz signal detection device according to claim 1, characterized in that: The first electrode, the second electrode, the third electrode and the fourth electrode are arranged in a fan shape.

4. The terahertz signal detection device according to claim 1, characterized in that: The radius of the first electrode is in the range of 80 μm-120 μm.

5. The terahertz signal detection device according to claim 1, characterized in that: The opening angle of the first electrode ranges from 60° to 90°.

6. The terahertz signal detection device according to claim 1, characterized in that: The thickness of the first electrode is in the range of 20nm-300nm.

7. The terahertz signal detection device according to claim 1, characterized in that: The insulating layer covers the first semiconductor layer.

8. A method for preparing a terahertz signal detection device, characterized in that: include: providing a substrate; forming a first electrode on the substrate, located on one side of the substrate; forming a second electrode on the substrate, which is symmetrically arranged with respect to the center of the substrate with respect to the first electrode; forming a first semiconductor layer between the first electrode and the second electrode to connect the first electrode and the second electrode; forming an insulating layer on the first semiconductor layer; forming a third electrode on the insulating layer, located on one side of the insulating layer; forming a fourth electrode on the insulating layer, the fourth electrode being symmetrically arranged with respect to the center of the substrate with respect to the third electrode; forming a second semiconductor layer between the third electrode and the fourth electrode to connect the third electrode and the fourth electrode; Wherein, the first electrode is arranged on one side of the upper surface of the substrate as a signal antenna; The first electrode, the second electrode, the third electrode and the fourth electrode have the same structure and size; the orthographic projections of the first electrode, the second electrode, the third electrode and the fourth electrode on the substrate do not overlap; A line connecting the centers of the first electrode and the second electrode is perpendicular to a line connecting the centers of the third electrode and the fourth electrode.

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