Light-emitting diode and light-emitting device

Abstract

The present invention relates to the field of semiconductor manufacturing technology, and more particularly to a light-emitting diode (LED) comprising an epitaxial structure, a first electrode, a second electrode, and an insulating structure. The epitaxial structure has opposing upper and lower surfaces, and comprises, in order from the upper surface to the lower surface, a first semiconductor layer, a light-emitting layer, and a second semiconductor layer. The first electrode is electrically connected to the first semiconductor layer, the second electrode is electrically connected to the second semiconductor layer, and the insulating structure covers a portion of the epitaxial structure. The epitaxial structure emits light having a first wavelength and a second wavelength at a first temperature and a second temperature, respectively, the second temperature being greater than the first temperature, and the second wavelength being greater than the first wavelength. The insulating structure has a transmittance of at least 90% for light having the second wavelength. Thus, the LED can have sufficient light output and brightness in a hot state, meeting usage requirements.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor manufacturing technology, and in particular to a light emitting diode and a light emitting device. Background Art

[0002] A light-emitting diode (LED) is a semiconductor light-emitting element typically made of semiconductors such as GaN, GaAs, GaP, and GaAsP. Its core is a PN junction, which is responsible for the light-emitting properties of the diode. LEDs offer advantages such as high luminous intensity, high efficiency, compact size, and long life, making them considered one of the most promising light sources. They are widely used in lighting, surveillance and control, high-definition broadcasting, high-end cinemas, office displays, interactive conferences, and virtual reality.

[0003] Currently, LED designs are all designed for normal temperatures, without considering thermal requirements. However, with the development of the LED industry, more and more users are beginning to have new needs. The inventors have discovered that at hot temperatures (e.g., 85°C), the wavelength of light emitted by current LED structures undergoes a redshift. This causes the PV layer (insulating layer) to absorb a large amount of this redshifted light, resulting in insufficient brightness and impaired operation of the LED. Summary of the Invention

[0004] To address the technical problems in the above-mentioned background technology, the inventors designed a PV layer with a DBR structure based on the wavelength in the hot state to ensure that the PV layer (insulating structure) does not absorb light in the hot state, thereby ensuring that the LED still has sufficient light output and luminous brightness in the hot state.

[0005] The present invention provides a light emitting diode, which comprises an epitaxial structure, a first electrode, a second electrode and an insulating structure.

[0006] The epitaxial structure has opposing upper and lower surfaces. The epitaxial structure includes, in order from the upper surface to the lower surface, a first semiconductor layer, a light-emitting layer, and a second semiconductor layer. A first electrode is electrically connected to the first semiconductor layer. A second electrode is electrically connected to the second semiconductor layer. An insulating structure covers a portion of the epitaxial structure. The epitaxial structure emits light having a first wavelength at a first temperature and emits light having a second wavelength at a second temperature, the second temperature being greater than the first temperature and the second wavelength being greater than the first wavelength. The insulating structure has a transmittance of at least 90% for the light having the second wavelength.

[0007] The present invention further provides a light emitting diode, which includes an epitaxial structure, a first electrode, a second electrode and an insulating structure.

[0008] The epitaxial structure has an upper surface and an upper surface facing each other. The epitaxial structure includes, in order from the upper surface to the lower surface, a first semiconductor layer, a light-emitting layer, and a second semiconductor layer. A first electrode is electrically connected to the first semiconductor layer. A second electrode is electrically connected to the second semiconductor layer. An insulating structure covers a portion of the epitaxial structure. The insulating structure has a transmittance of at least 90% for light emitted by the epitaxial structure in a hot state.

[0009] In some embodiments, the insulating structure includes m first sublayers and n second sublayers stacked alternately, where m and n are both positive integers and greater than 1, and the refractive index of the first sublayer is different from the refractive index of the second sublayer.

[0010] In some embodiments, the refractive index of the second sub-layer is at least 1.2 times the refractive index of the first sub-layer.

[0011] In some embodiments, the material of the first sub-layer includes silicon oxide, and the material of the second sub-layer includes silicon nitride or titanium oxide.

[0012] In some embodiments, the optical thickness of the first sublayer is H1 = λ / 4n1, and the optical thickness of the second sublayer is H2 = λ / 4n2, where λ is the emission wavelength of the light-emitting layer, n1 is the refractive index of the first sublayer, and n2 is the refractive index of the second sublayer.

[0013] In some embodiments, the first temperature ranges from 10 to 30°C, and the second temperature ranges from 50 to 100°C.

[0014] In some embodiments, the insulating structure completely covers the exposed surface of the first semiconductor layer, and the insulating structure also covers the sidewalls and a portion of the upper surface of the first electrode.

[0015] In some embodiments, the light emitting diode further includes a reflective layer, and the reflective layer covers the insulating structure.

[0016] In some embodiments, the reflective layer is a Ti metal reflective layer or an Au metal reflective layer.

[0017] In some embodiments, the reflective layer has a thickness ranging from 1000 to 2000 angstroms.

[0018] In some embodiments, the reflective layer completely covers the sidewalls of the insulating structure.

[0019] In some embodiments, the first electrode is located on a side of an upper surface of the epitaxial structure, and the second electrode is located on a side of a lower surface of the epitaxial structure.

[0020] In some embodiments, the light-emitting diode further includes a current blocking layer, an ohmic contact layer, a metal reflective layer, a bonding layer and a substrate, the current blocking layer is connected to the second semiconductor layer, the current blocking layer has an opening exposing the second semiconductor layer, the ohmic contact layer is connected to the second semiconductor layer through the opening, the metal reflective layer covers the lower surface of the current blocking layer and the lower surface of the second electrode, the bonding layer covers the lower surface of the metal reflective layer, the substrate covers the lower surface of the bonding layer, and the second electrode covers the lower surface of the substrate.

[0021] In some embodiments, the first semiconductor layer is an N-type semiconductor layer, the second semiconductor layer is a P-type semiconductor layer, and the P-type semiconductor layer includes a P-type cap layer, a P-type transition layer, and a P-type current spreading layer in sequence from the upper surface to the lower surface.

[0022] The present invention also provides a light-emitting device, which uses the light-emitting diode provided by any of the above embodiments.

[0023] An embodiment of the present invention provides a light-emitting diode and a light-emitting device. By optimizing the design of the insulation structure, the insulation structure has a high light transmittance even in a hot state and does not absorb light, thereby ensuring that the light-emitting diode has sufficient light output and brightness in a hot state to meet usage requirements.

[0024] Other features and advantages of the present invention will be set forth in the following description, and in part will be obvious from the description, or may be learned by practicing the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following is a brief introduction to the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0026] Figure 1 is a schematic structural diagram of a light emitting diode provided by a first embodiment of the present invention;

[0027] Figure 2 It is a structural diagram of the insulation structure;

[0028] Figure 3 is a schematic structural diagram of a light emitting diode provided by a second embodiment of the present invention;

[0029] Figure 4 is a schematic structural diagram of a light emitting diode provided by a third embodiment of the present invention;

[0030] Figures 5 and 6 yes Figure 1The schematic diagram of the structure of the light emitting diode at each stage of the manufacturing process is shown;

[0031] Figure 7 Schematic diagram of the optical performance of the insulating structure provided by one embodiment of the present invention.

[0032] Reference numerals:

[0033] 1, 2, 3 - light-emitting diode; 12 - epitaxial structure; 121 - upper surface; 122 - lower surface; 123 - first semiconductor layer; 124 - light-emitting layer; 125 - second semiconductor layer; 1251 - P-type cap layer; 1252 - P-type transition layer; 1253 - P-type current spreading layer; 14 - insulating structure; 141 - first sublayer; 142 - second sublayer; 16 - reflective layer; 21 - first electrode; 22 - second electrode; 24 - current blocking layer; 241 - opening; 26 - metal reflective layer; 28 - bonding layer; 30 - substrate; 32 - ohmic contact layer; 40 - growth substrate. DETAILED DESCRIPTION

[0034] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments; the technical features designed in different implementation modes of the present invention described below can be combined with each other as long as they do not conflict with each other; based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present invention.

[0035] In the description of the present invention, it should be understood that the terms "center", "lateral", "up", "down", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or component referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore cannot be understood as limiting the present invention. In addition, the terms "first" and "second" are used for descriptive purposes only, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, features defined as "first" and "second" may explicitly or implicitly include one or more of the features. In the description of the present invention, unless otherwise specified, "multiple" means two or more. In addition, the term "including" and any variations thereof all mean "at least including".

[0036] See also Figure 1 and Figure 2 , Figure 1 is a schematic structural diagram of a light emitting diode 1 provided in the first embodiment of the present invention, Figure 2 is a schematic structural diagram of the insulating structure 14. To achieve at least one of the aforementioned advantages or other advantages, a first embodiment of the present invention provides a light-emitting diode 1. As shown in the figure, the light-emitting diode 1 may include an epitaxial structure 12, a first electrode 21, a second electrode 22, and an insulating structure 14.

[0037] The epitaxial structure 12 has an upper surface 121 and a lower surface 122 opposite to each other. Figure 1 The structure includes, from top to bottom in sequence, a first semiconductor layer 123, a light emitting layer 124 and a second semiconductor layer 125.

[0038] The first semiconductor layer 123 can be an N-type semiconductor layer that can provide electrons to the light-emitting layer 124 under the action of a power source. In some embodiments, the first semiconductor layer 123 includes an N-type doped nitride layer, an arsenide layer, or a phosphide layer. The N-type doped nitride layer, arsenide layer, or phosphide layer may include one or more N-type impurities of Group IV elements. The N-type impurities may include one or a combination of Si, Ge, and Sn.

[0039] The light-emitting layer 124 may be a quantum well structure (Quantum Well, abbreviated as QW). In some embodiments, the light-emitting layer 124 may also be a multiple quantum well structure (Multiple Quantum Well, abbreviated as MQW), wherein the multiple quantum well structure includes multiple quantum well layers (Well) and multiple quantum barrier layers (Barrier) alternately arranged in a repeated manner, for example, it may be a multiple quantum well structure of GaN / AlGaN, InAlGaN / InAlGaN, InGaN / AlGaN, GaInP / AlGaInP, InGaAs / AlInGaAs. In addition, the composition and thickness of the well layer in the light-emitting layer 124 determine the wavelength of the generated light. In order to improve the luminous efficiency of the light-emitting layer 124, it can be achieved by changing the depth of the quantum well, the number of layers, thickness and / or other characteristics of the paired quantum wells and quantum barriers in the light-emitting layer 124.

[0040] The second semiconductor layer 125 can be a P-type semiconductor layer, which can provide holes to the light-emitting layer 124 under the action of a power supply. In some embodiments, the second semiconductor layer 125 includes a P-type doped nitride layer, an arsenide layer or a phosphide. The P-type doped nitride layer, the arsenide layer or the phosphide may include one or more P-type impurities of Group II elements. The P-type impurities may include one or a combination of Mg, Zn, Be. The second semiconductor layer 125 can be a single-layer structure or a multi-layer structure, and the multi-layer structure has different compositions. In addition, the setting of the epitaxial structure 12 is not limited to this, and other types of epitaxial structures 12 can be selected according to actual needs.

[0041] The N-type semiconductor layer, the light-emitting layer 124, and the P-type semiconductor layer can be made of materials such as aluminum gallium indium nitride, gallium nitride, aluminum gallium nitride, aluminum indium phosphide, aluminum gallium indium phosphide, gallium arsenide, or aluminum gallium arsenide. The N-type semiconductor layer or the P-type semiconductor layer includes a cover layer that provides electrons or holes, and may include other layer materials such as a current spreading layer, a window layer, etc., which are arranged into different multilayers according to different doping concentrations or component contents. In some embodiments, such as Figure 1 As shown, the first semiconductor layer 123 is an N-type semiconductor layer, and the second semiconductor layer 125 is a P-type semiconductor layer. The P-type semiconductor layer includes, in order from the upper surface 121 to the lower surface 122, a P-type cap layer 1251, a P-type transition layer 1252, and a P-type current spreading layer 1253. The P-type transition layer 1252 allows for a smooth transition from the P-type cap layer 1251 to the P-type current spreading layer 1253, reducing lattice defects and potential barriers, lowering voltage, and reducing light absorption points. The P-type current spreading layer 1253 is designed to achieve good current spreading.

[0042] The first electrode 21 is electrically connected to the first semiconductor layer 123. The first electrode 21 can have a single-layer, double-layer, or multi-layer structure, such as a stacked structure of Ti / Al, Ti / Al / Ti / Au, Ti / Al / Ni / Au, or V / Al / Pt / Au. In some embodiments, the first electrode 21 can be formed directly on the upper surface 121 of the epitaxial structure 12, forming a good ohmic contact with the first semiconductor layer 123.

[0043] The second electrode 22 is electrically connected to the second semiconductor layer 125. The second electrode 22 can be made of a transparent conductive material or a metal material, and can be adaptively selected according to the doping conditions of the surface layer of the second semiconductor layer 125. In some embodiments, the second electrode 22 is made of a transparent conductive material, and the material may include indium tin oxide (ITO), indium zinc oxide (IZO), indium oxide (InO), tin oxide (SnO), cadmium tin oxide (CTO), antimony tin oxide (ATO), aluminum zinc oxide (AZO), zinc tin oxide (ZTO), gallium doped zinc oxide (GZO), tungsten doped indium oxide (IWO), or zinc oxide (ZnO), but the embodiments of the present disclosure are not limited thereto.

[0044] The insulating structure 14 covers a portion of the epitaxial structure 12. The insulating structure 14 covers at least the sidewalls of the first semiconductor layer 123, the sidewalls of the light-emitting layer 124, and a portion of the sidewalls of the second semiconductor layer 125. The epitaxial structure 12 emits light with a first wavelength at a first temperature, and emits light with a second wavelength at a second temperature. The second temperature is greater than the first temperature, and the second wavelength is greater than the first wavelength. In other words, as the temperature increases, the wavelength of the light emitted by the epitaxial structure 12 will change. For example, at a first temperature of 25°C, the epitaxial structure 12 emits red light with a wavelength of 630nm. As the temperature increases to a second temperature of 85°C, the wavelength of the light emitted by the same epitaxial structure 12 undergoes a red shift, emitting red light with a wavelength of 640nm. The insulating structure 14 has a transmittance of at least 90% for light with the second wavelength. Continuing with the above example, the insulating structure 14 maintains at least 90% transmittance for red light with a wavelength of 640 nm emitted by the epitaxial structure 12 at 85°C. This means that the structure does not absorb light, thereby ensuring that the LED 1 has sufficient light output and brightness in the hot state to meet operational requirements. Preferably, the insulating structure 14 has at least 95% transmittance for light with the second wavelength, such as 98%, 99%, or nearly 100%.

[0045] In some embodiments, to ensure that the light emitting diode 1 has sufficient light output and brightness in the hot state, the insulating structure 14 can be configured to have a transmittance of at least 90% for the light emitted by the epitaxial structure 12 in the hot state, which can also solve the above-mentioned technical problem. The epitaxial structure 12 in the hot state can be understood as the epitaxial structure 12 in the hot state after the ambient temperature is raised to a certain level (e.g., from a normal temperature of 25°C to a hot state of 85°C) relative to the working condition of the epitaxial structure 12 in the normal state. The normal temperature is generally the temperature in the natural environment, such as around 10 to 30°C, and the hot state temperature range is generally 50 to 100°C.

[0046] In some embodiments, the first temperature ranges from 10° C. to 30° C., and the second temperature ranges from 50° C. to 100° C. The second temperature is at least 1.2 times the first temperature, and the second temperature is at least 10° C. higher than the first temperature.

[0047] In some embodiments, as Figure 2 As shown, the insulating structure 14 includes m first sublayers 141 and n second sublayers 142 stacked alternately, where m and n are both positive integers and greater than 1. The refractive index of the first sublayer 141 is different from the refractive index of the second sublayer 142, and the materials of the first sublayer 141 and the second sublayer 142 are different. In other words, the insulating structure 14 is a Bragg reflector structure (DBR) formed by repeatedly stacking two materials with different refractive indices. Preferably, the refractive index of the second sublayer 142 is at least 1.2 times the refractive index of the first sublayer 141, for example, 1.3 times, 1.4 times, 1.5 times, etc. In some embodiments, the material of the first sublayer 141 may include silicon oxide, such as SiO2, and the material of the second sublayer 142 may include silicon nitride or titanium oxide, such as Si3N4 or TiO2. In some embodiments, the optical thickness of the first sublayer 141 is H1 = λ / 4n1, and the optical thickness of the second sublayer 142 is H2 = λ / 4n2, where λ is the emission wavelength (peak wavelength) of the light-emitting layer 124, n1 is the refractive index of the first sublayer 141, and n2 is the refractive index of the second sublayer 142. By adjusting parameters such as the refractive index, thickness, and stacking number of the first and second sublayers 141, 142, the transmittance of the insulating structure 14 to light emitted by the hot epitaxial structure 12 can be further adjusted to meet actual usage requirements.

[0048] In some embodiments, as Figure 1As shown, the light-emitting diode 1 is a vertical structure light-emitting diode 1, with the first electrode 21 and the second electrode 22 located on the upper and lower sides of the epitaxial structure 12, respectively. That is, the first electrode 21 is located on the upper surface 121 of the epitaxial structure 12, and the second electrode 22 is located on the lower surface 122 of the epitaxial structure 12. However, the present invention is not limited to this. In other embodiments, the light-emitting diode 1 can also be a face-up structure light-emitting diode or a flip-chip structure light-emitting diode, with the first electrode 21 and the second electrode 22 located on the same side of the epitaxial structure 12.

[0049] In some embodiments, as Figure 1 As shown, the LED 1 may further include a current blocking layer 24, a metal reflective layer 26, a bonding layer 28, a substrate 30, and an ohmic contact layer 32. The current blocking layer 24 is connected to the second semiconductor layer 125 and has an opening 241 exposing the second semiconductor layer 125. The current blocking layer 24 is used to block current. The ohmic contact layer 32 is connected to the second semiconductor layer 125 through the opening 241 of the current blocking layer 24 to form a good ohmic contact with the second semiconductor layer 125. The metal reflective layer 26 covers the lower surface of the current blocking layer 24 and the lower surface of the second electrode 22. It is used to reflect light to improve the light extraction performance of the LED 1. The bonding layer 28 covers the lower surface of the metal reflective layer 26 to tightly connect the metal reflective layer 26 to the substrate 30. The substrate 30 covers the lower surface of the bonding layer 28. The second electrode 22 covers the lower surface of the substrate 30.

[0050] See also Figure 3 , Figure 3 FIG. 2 is a schematic diagram of the structure of the light emitting diode 2 provided in the second embodiment of the present invention. Figure 1 Compared to the light-emitting diode 1 shown in the first embodiment, the light-emitting diode 2 provided in the second embodiment differs primarily in that the insulating structure 14 completely covers the exposed surface of the first semiconductor layer 123. The insulating structure 14 also covers the sidewalls and a portion of the upper surface of the first electrode 21. The exposed surface of the first semiconductor layer 123 refers to the upper surface of the first semiconductor layer 123 not covered by the first electrode 21 in the figure. This arrangement helps prevent corrosion from moisture, chemicals, and other substances while ensuring sufficient light output and brightness from the light-emitting diode 2, further improving the thermal stability of the light-emitting diode 2.

[0051] See also Figure 4 , Figure 4 FIG. 3 is a schematic diagram of the structure of the light emitting diode 3 provided in the third embodiment of the present invention. Figure 3Compared to the LED 2 shown in the second embodiment, the LED 3 provided in the third embodiment differs primarily in that it further includes a reflective layer 16. Reflective layer 16 covers the insulating structure 14 and reflects light, directing sidewall light into the LED 3, thereby reducing sidewall light emission and increasing frontal light emission. This embodiment utilizes reflective layer 16 to reduce sidewall light emission from the epitaxial structure 12, allowing more light to escape from the front, thereby increasing the brightness of the LED 3 in its hot state.

[0052] In some embodiments, the reflective layer 16 is primarily disposed at the edges of the cutting lanes and the light-emitting area. Preferably, the reflective layer 16 completely covers the sidewalls of the insulating structure 14, reducing side light emission and allowing more light to be emitted from the front. In some embodiments, the reflective layer 16 can be a metal layer with high reflectivity, such as a Ti metal reflective layer or an Au metal reflective layer. In some embodiments, the thickness of the reflective layer 16 ranges from 1000 to 2000 angstroms.

[0053] It's worth noting that 95% of the light emitted by LEDs 1, 2, and 3 is emitted from the front. However, in current LED structures, after the PV layer is deposited, this frontal light output decreases by approximately 5% (at 25°C). The wavelength undergoes a red shift in the hot state, resulting in even greater light loss. Therefore, a high-transmittance insulating structure 14 is designed to maximize the amount of light emitted from the front. Furthermore, a reflective layer 16 is added to allow the small amount of light from the sidewalls to be emitted from the front as much as possible, thereby increasing the brightness of LED 3.

[0054] The following discloses a method for making Figure 1 The method shown in FIG1 is for light emitting diodes. Figures 5 and 6 , Figures 5 and 6 yes Figure 1 The structure diagram of the light emitting diode 1 at each stage of the manufacturing process is shown.

[0055] First, refer to Figure 5 As shown, a growth substrate 40 is provided. Then, a first semiconductor layer 123, a light-emitting layer 124, and a second semiconductor layer 125 are sequentially grown on the growth substrate 40. Specifically, the second semiconductor layer 125 includes, from bottom to top, a P-type cap layer 1251, a P-type transition layer 1252, and a P-type current spreading layer 1253.

[0056] Next, refer to Figure 6As shown, a current blocking layer 24 is first formed below the second semiconductor layer 125 and etched to form an opening 241 to facilitate electrical conduction. An ohmic contact layer 32 is then provided at the opening 241 of the current blocking layer 24. This forms a good ohmic contact with the second semiconductor layer 125, enhancing the input and output of current. A metal reflective layer 26 is then formed below the second electrode 22. This metal reflective layer 26 reflects light, enhancing the overall light output. The metal reflective layer 26 is then connected to the substrate 30 via a bonding layer 28. The second electrode 22 is then provided on the side of the substrate 30 away from the bonding layer 28. Next, the growth substrate 40 is removed, and the first electrode 21 is formed on the first semiconductor layer 123. The epitaxial structure 12 is then partially etched, and then an insulating structure 14 is formed over the epitaxial structure 12.

[0057] The above is only a public one for making Figure 1 The method for manufacturing the light emitting diode 1 shown is not limited to this case, and is only used to illustrate a method for manufacturing the light emitting diode 1 .

[0058] See also Figure 7 , Figure 7 FIG. 1 is a schematic diagram of the optical performance of the insulating structure 14 provided by an embodiment of the present invention. Figure 7 As shown in , the insulating structure 14 can achieve approximately 100% transmittance for heat-redshifted light (the redshifted wavelength is approximately 640 nm). This means that there is virtually no absorption of the redshifted light. The transmittance can be calculated through optical simulation using the n values ​​(refractive indices) of the light-emitting surface, the insulating structure 14, and air.

[0059] The present invention further provides a light-emitting device, which uses the light-emitting diodes 1, 2, and 3 provided in any one of the above embodiments.

[0060] In summary, an embodiment of the present invention provides a light-emitting diode 1, 2, 3 and a light-emitting device, which optimizes the design of the insulating structure 14 so that the insulating structure 14 has high light transmittance even in a hot state, thereby ensuring that the light-emitting diode 1 has sufficient light output and luminous brightness in a hot state to meet usage requirements.

[0061] In addition, those skilled in the art should understand that, although there are many problems in the prior art, each embodiment or technical solution of the present invention may be improved in only one or several aspects, without having to simultaneously solve all the technical problems listed in the prior art or background art. Those skilled in the art should understand that any content not mentioned in a claim should not be construed as limiting the claim.

[0062] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the above embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the above embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A light emitting diode, characterized in that: The light emitting diode comprises: An epitaxial structure having an upper surface and a lower surface opposite to each other, wherein the epitaxial structure includes a first semiconductor layer, a light emitting layer, and a second semiconductor layer in sequence from the upper surface to the lower surface; a first electrode electrically connected to the first semiconductor layer; a second electrode electrically connected to the second semiconductor layer; an insulating structure covering a portion of the epitaxial structure; The epitaxial structure emits light with a first wavelength at a first temperature, and emits light with a second wavelength at a second temperature, the second temperature is greater than the first temperature, the second wavelength is greater than the first wavelength, and the insulating structure has a transmittance of at least 90% for light with the second wavelength; the first temperature range is 10~30℃, and the second temperature range is 50~100℃.

2. The light emitting diode according to claim 1, wherein: The insulating structure includes m first sublayers and n second sublayers stacked alternately, where m and n are both positive integers and greater than 1, and the refractive index of the first sublayer is different from the refractive index of the second sublayer.

3. The light emitting diode according to claim 2, wherein: The refractive index of the second sub-layer is at least 1.2 times the refractive index of the first sub-layer.

4. The light emitting diode according to claim 3, wherein: The material of the first sub-layer includes silicon oxide, and the material of the second sub-layer includes silicon nitride or titanium oxide.

5. The light emitting diode according to claim 2, wherein: The optical thickness of the first sublayer is H1=λ / 4n1, and the optical thickness of the second sublayer is H2=λ / 4n2, wherein λ is the emission wavelength of the light-emitting layer, n1 is the refractive index of the first sublayer, and n2 is the refractive index of the second sublayer.

6. The light emitting diode according to claim 1, wherein: The insulating structure completely covers the exposed surface of the first semiconductor layer, and the insulating structure also covers the sidewalls and a portion of the upper surface of the first electrode.

7. The light emitting diode according to claim 1 or 6, characterized in that: The light emitting diode further includes a reflective layer, and the reflective layer covers the insulating structure.

8. The light emitting diode according to claim 7, wherein: The reflective layer is a Ti metal reflective layer or an Au metal reflective layer.

9. The light emitting diode according to claim 7, wherein: The thickness of the reflective layer ranges from 1000 to 2000 angstroms.

10. The light emitting diode according to claim 7, characterized in that: The reflective layer completely covers the sidewalls of the insulating structure.

11. The light emitting diode according to claim 1, wherein: The first electrode is located on the upper surface of the epitaxial structure, and the second electrode is located on the lower surface of the epitaxial structure.

12. A light emitting diode, characterized in that: The light emitting diode comprises: An epitaxial structure having an upper surface and a lower surface opposite to each other, wherein the epitaxial structure includes a first semiconductor layer, a light emitting layer, and a second semiconductor layer in sequence from the upper surface to the lower surface; a first electrode electrically connected to the first semiconductor layer; a second electrode electrically connected to the second semiconductor layer; an insulating structure covering a portion of the epitaxial structure; The insulating structure has a light transmittance of at least 90% for light emitted by the epitaxial structure in a hot state, and the temperature range of the hot state is 50-100°C.

13. The light emitting diode according to claim 12, characterized in that: The insulating structure includes m first sublayers and n second sublayers stacked alternately, where m and n are both positive integers and greater than 1, and the refractive index of the first sublayer is different from the refractive index of the second sublayer.

14. The light emitting diode according to claim 13, wherein: The refractive index of the second sub-layer is at least 1.2 times that of the first sub-layer. The material of the first sub-layer includes silicon oxide, and the material of the second sub-layer includes silicon nitride or titanium oxide.

15. The light emitting diode according to claim 12, wherein: The light emitting diode further includes a reflective layer, and the reflective layer covers the insulating structure.

16. The light emitting diode according to claim 15, characterized in that: The reflective layer is a Ti metal reflective layer or an Au metal reflective layer, and the thickness of the reflective layer ranges from 1000 to 2000 angstroms.

17. A light emitting device, characterized in that: The light emitting device adopts the light emitting diode according to any one of claims 1 to 16.

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