Semiconductor device manufacturing sheet

Abstract

A semiconductor device manufacturing sheet comprising a substrate, an adhesive layer, an intermediate layer, and a film-shaped adhesive, the semiconductor device manufacturing sheet being configured by sequentially stacking the adhesive layer, the intermediate layer, and the film-shaped adhesive on the substrate, the intermediate layer containing a non-silicon resin having a weight average molecular weight of 100,000 or less as a main component, and a maximum cross-sectional height of a surface of the substrate opposite to a side provided with the adhesive layer being 2,000 nm or less.

Description

Technical Field

[0001] This invention relates to wafers for manufacturing semiconductor devices. This application claims priority based on Japanese Patent Application No. 2020-058734, filed in Japan on March 27, 2020, the contents of which are incorporated herein by reference. Background Technology

[0002] In the manufacture of semiconductor devices, a semiconductor chip with a film-like adhesive is used, which includes a semiconductor chip and a film-like adhesive disposed on the back of the semiconductor chip.

[0003] As an example of a method for manufacturing a semiconductor chip with a film-like adhesive, the following method can be cited.

[0004] That is, firstly, a dicing die bonding sheet is attached to the back of the semiconductor wafer.

[0005] As a die-cutting fixture, examples include a die-cutting fixture having a support sheet and a film-like adhesive disposed on one side of the support sheet, where the support sheet can be used as a die-cutting fixture. Various support sheets with different structures exist, such as a support sheet having a substrate and an adhesive layer disposed on one side of the substrate; or a support sheet consisting only of a substrate. For a support sheet having an adhesive layer, the outermost surface of the adhesive layer side is the surface on which the film-like adhesive is disposed. The die-cutting fixture is attached to the back side of a semiconductor wafer by the film-like adhesive therein.

[0006] Next, the semiconductor wafer and the film adhesive on the support sheet are cut together using a blade. This "cutting" of the semiconductor wafer is also called "splitting," thereby singulating the semiconductor wafer into the target semiconductor chip. The film adhesive is cut along the outer periphery of the semiconductor chip. Thus, a semiconductor chip with film adhesive, comprising the semiconductor chip and the cut film adhesive disposed on the back of the semiconductor chip, can be obtained. Furthermore, a semiconductor chip assembly with film adhesive, consisting of multiple such semiconductor chips with film adhesive held in an orderly arrangement on the support sheet, can also be obtained.

[0007] Next, the semiconductor chip with the film-like adhesive is pulled away from the support sheet to pick it up. When using a support sheet with a curable adhesive layer, the adhesive layer is pre-cured to reduce adhesion, making it easier to pick up.

[0008] Thus, a semiconductor chip with a film-like adhesive can be obtained for manufacturing semiconductor devices.

[0009] Another example of a method for manufacturing a semiconductor chip with a film-like binder is the following method.

[0010] That is, firstly, a backing tape (sometimes also called "surface protection tape") is attached to the circuit forming surface of the semiconductor wafer.

[0011] Next, predetermined dicing positions are defined inside the semiconductor wafer. A laser is focused on the area encompassed by these positions and irradiated with laser light, thereby forming a modified layer inside the semiconductor wafer. Then, a grinder is used to grind the back side of the semiconductor wafer, thereby adjusting the thickness of the semiconductor wafer to the target value. By utilizing the force applied during the grinding process, the semiconductor wafer is diced (single-chip) at the location where the modified layer is formed, thus fabricating multiple semiconductor chips. This method of dicing semiconductor wafers with the formation of a modified layer is called Stealth Dicing (registered trademark), and it is fundamentally different from laser cutting, which involves irradiating the semiconductor wafer with a laser to cut the surface of the semiconductor wafer while simultaneously cutting the irradiated area.

[0012] Next, a die bond is attached to the back side (in other words, the polished surface) of all these semiconductor chips, which are fixed to the back polishing tape, after the aforementioned polishing. Examples of die bonds include the same sheet material as the diced die bond described above. As mentioned above, die bonds can sometimes be designed to have the same structure as diced die bonds, but are not used during semiconductor wafer dicing. Die bonds can also be attached to the back side of the semiconductor chips using a film-like adhesive within the die bond.

[0013] Next, after removing the backing tape from the semiconductor chip, the die is cooled and stretched in a direction parallel to its surface (e.g., the surface of the film adhesive attached to the semiconductor chip) to perform so-called expansion (cold expansion), thereby cutting the film adhesive along the outer periphery of the semiconductor chip.

[0014] Thus, a semiconductor chip with a film-like adhesive can be obtained, which has a semiconductor chip and a cut film-like adhesive disposed on the back of the semiconductor chip.

[0015] Next, in the same manner as in the case of cutting with a blade described above, the semiconductor chip with film-like adhesive is pulled away from the support sheet to pick it up, thereby obtaining a semiconductor chip with film-like adhesive for manufacturing semiconductor devices.

[0016] Another example of a method for manufacturing a semiconductor chip with a film-like binder is the following method.

[0017] First, trenches are formed on one side of the circuit-forming surface of the semiconductor wafer using methods such as blade cutting, laser cutting, or water jet cutting. This process is also known as half-cut.

[0018] Next, a backing tape (sometimes called "surface protection tape") is attached to the circuit forming surface of the semiconductor wafer.

[0019] Next, a grinding machine is used to grind the side of the semiconductor wafer opposite to the circuit formation surface until the formed trench is reached, thereby dividing the semiconductor wafer (individualizing) and producing multiple semiconductor chips.

[0020] Next, a die is attached to the back side (in other words, the polished surface) of all these semiconductor chipsets fixed on the back polishing tape.

[0021] Next, the backing tape is removed from the semiconductor chip. The semiconductor chip assembly is then fixed to the substrate using a film adhesive.

[0022] The film-like adhesive can be cut along the outer periphery of a semiconductor chip by laser irradiation or spreading. This method, which reverses the previous process of cutting the wafer after grinding the back side, is called Dicing Before Grinding (DBG).

[0023] In addition, Stealth Dicing (a registered trademark) mentioned above is also known as SDBG (Stealth Dicing Before Grinding), and is considered a variation of the pre-cutting method.

[0024] Both diced wafers and die-bonded wafers can be used to manufacture semiconductor chips with film-like adhesives, and ultimately to manufacture target semiconductor devices. In this specification, diced wafers and die-bonded wafers are collectively referred to as "semiconductor device manufacturing wafers".

[0025] As a wafer for manufacturing semiconductor devices, for example, a die-bonding tape (equivalent to the die-bonding wafer) is disclosed having a substrate layer (equivalent to the support sheet) and an adhesive layer (equivalent to the film adhesive) laminated in direct contact (see Patent Document 1). With this die-bonding tape, since the 90-degree peel force of the substrate layer and the adhesive layer at -15°C is adjusted to a specific range, the adhesive layer can be separated with good precision by spreading. Furthermore, since the 90-degree peel force of the substrate layer and the adhesive layer at 23°C is adjusted to a specific range, when using this die-bonding tape, semiconductor chips with adhesive layers (equivalent to the semiconductor chips with film adhesive) can be picked up without difficulty, and the semiconductor wafer and semiconductor chip can be prevented from peeling off from the adhesive layer until the picking process.

[0026] Existing technical documents

[0027] Patent documents

[0028] Patent Document 1: Japanese Patent Application Publication No. 2018-56289 Summary of the Invention

[0029] The technical problem to be solved by the present invention

[0030] By attaching the die-cut wafer (semiconductor device manufacturing wafer) described in Patent Document 1 to a semiconductor chip obtained by the DBG method and expanding it, a semiconductor chip with a film adhesive can be obtained.

[0031] In the expansion process, the surface of the substrate of the semiconductor device manufacturing wafer opposite to the side with the adhesive layer (the back side of the substrate) is pushed upward using an adsorption stage and an upward pushing member, thereby expanding the substrate.

[0032] At this point, the semiconductor chip assembly with film adhesive is fixed by using an adsorption stage to attract the back side of the substrate of the semiconductor device manufacturing wafer.

[0033] When using an adsorption stage to attract the back side of a substrate for manufacturing semiconductor devices, a gap may sometimes occur during the adsorption process, causing the adsorption between the back side of the substrate and the adsorption stage to be released.

[0034] Therefore, the object of the present invention is to provide a semiconductor device manufacturing wafer in which the release of adsorption between the back side of the substrate and the adsorption stage is suppressed.

[0035] Technical means to solve technical problems

[0036] The present invention has the following solution.

[0037] (1) A wafer for manufacturing a semiconductor device, comprising a substrate, an adhesive layer, an intermediate layer, and a film adhesive.

[0038] The semiconductor device manufacturing wafer is formed by sequentially laminating the adhesive layer, the intermediate layer, and the film adhesive on the substrate.

[0039] The intermediate layer contains a non-silicone resin with a weight-average molecular weight of less than 100,000 as its main component.

[0040] The maximum cross-sectional height of the surface of the substrate opposite to the side having the adhesive layer is less than 2000 nm.

[0041] (2) The semiconductor device manufacturing wafer according to (1), wherein the surface roughness of the surface of the substrate opposite to the side having the adhesive layer is 200 nm or less.

[0042] (3) A semiconductor device manufacturing wafer according to (1) or (2), wherein the haze of the support sheet formed by the substrate and the adhesive layer is 10 or more, or the total light transmittance of the support sheet is 70% or less.

[0043] (4) A wafer for manufacturing a semiconductor device according to any one of (1) to (3), wherein,

[0044] The semiconductor device manufacturing wafer is used to manufacture the semiconductor chip with film adhesive using a method for manufacturing semiconductor chips with film adhesive.

[0045] The manufacturing method includes:

[0046] The process of forming a laminate by attaching the semiconductor device manufacturing wafer to the back side of a semiconductor chip;

[0047] At temperatures below 0°C, while adsorbing the surface of the substrate opposite to the side containing the adhesive layer using an adsorption stage, the entire area of ​​the semiconductor device manufacturing wafer having the interlayer and the film adhesive stacked is pushed upward from the substrate side using the adsorption stage and the pushing member, expanding and cutting the film adhesive, to obtain a semiconductor chip assembly with multiple semiconductor chips with film adhesive neatly arranged on the interlayer; and

[0048] The process of heating the peripheral portion of the expanded laminated wafer, where the semiconductor chip without the film-like adhesive is not placed.

[0049] The area of ​​the semiconductor chip is 9mm². 2 the following.

[0050] (5) A wafer for manufacturing a semiconductor device according to any one of (1) to (4), wherein the adhesive layer contains one or more selected from the group consisting of colorants and fillers.

[0051] (6) A method for manufacturing a semiconductor chip with a wafer for manufacturing semiconductor devices, comprising:

[0052] The process of forming a laminate by attaching a semiconductor device manufacturing wafer, as described in any one of (1) to (5), to the back side of a semiconductor chip;

[0053] At temperatures below 0°C, while adsorbing the surface of the substrate opposite to the side containing the adhesive layer using an adsorption stage, the entire area of ​​the semiconductor device manufacturing wafer having the interlayer and the film adhesive stacked is pushed upward from the substrate side using the adsorption stage and the pushing member, expanding and cutting the film adhesive, to obtain a semiconductor chip assembly with multiple semiconductor chips with film adhesive neatly arranged on the interlayer; and

[0054] A process of heating the periphery of the semiconductor chip in the expanded laminate that does not contain the film-like adhesive.

[0055] Invention Effects

[0056] According to the present invention, a semiconductor device manufacturing wafer in which the release of adsorption between a substrate and an adsorption stage is suppressed can be provided. Attached Figure Description

[0057] Figure 1 A cross-sectional view of a semiconductor device manufacturing wafer according to one embodiment of the present invention is shown for illustrative purposes.

[0058] Figure 2 for Figure 1 The diagram shows a top view of a semiconductor device manufacturing wafer.

[0059] Figure 3A This is a cross-sectional view illustrating an example of a method of using a semiconductor device manufacturing wafer according to one embodiment of the present invention.

[0060] Figure 3B This is a cross-sectional view illustrating an example of a method of using a semiconductor device manufacturing wafer according to one embodiment of the present invention.

[0061] Figure 3C This is a cross-sectional view illustrating an example of a method of using a semiconductor device manufacturing wafer according to one embodiment of the present invention.

[0062] Figure 4A This is a cross-sectional view illustrating an example of a method for manufacturing a semiconductor chip.

[0063] Figure 4B This is a cross-sectional view illustrating an example of a method for manufacturing a semiconductor chip.

[0064] Figure 4C This is a cross-sectional view illustrating an example of a method for manufacturing a semiconductor chip.

[0065] Figure 5A This is a cross-sectional view illustrating another example of a method of using a semiconductor device manufacturing wafer according to one embodiment of the present invention.

[0066] Figure 5B This is a cross-sectional view illustrating another example of a method of using a semiconductor device manufacturing wafer according to one embodiment of the present invention.

[0067] Figure 5C This is a cross-sectional view illustrating another example of a method of using a semiconductor device manufacturing wafer according to one embodiment of the present invention.

[0068] Figure 6A This is a cross-sectional view illustrating a method for forming trenches in a semiconductor wafer to obtain a semiconductor chip.

[0069] Figure 6B This is a cross-sectional view illustrating a method for forming trenches in a semiconductor wafer to obtain a semiconductor chip.

[0070] Figure 6C This is a cross-sectional view illustrating a method for forming trenches in a semiconductor wafer to obtain a semiconductor chip.

[0071] Figure 7 A top view of the object being evaluated is shown schematically to illustrate the location for measuring the cut width when evaluating cut retention in the embodiments. Detailed Implementation

[0072] ◇ Semiconductor device manufacturing wafers

[0073] A semiconductor device manufacturing wafer according to one embodiment of the present invention comprises a substrate, an adhesive layer, an intermediate layer and a film adhesive, which is formed by sequentially laminating the adhesive layer, the intermediate layer and the film adhesive on the substrate, wherein the intermediate layer contains a non-silicone resin with a weight average molecular weight of less than 100,000 as the main component.

[0074] In this embodiment, the semiconductor device manufacturing wafer is attached to a semiconductor chip assembly obtained, for example, using the DBG method described above, and is used as a die-bonded wafer.

[0075] The semiconductor device manufacturing wafer includes the intermediate layer, and the maximum cross-sectional height of the surface of the substrate opposite to the side having the adhesive layer (the back side of the substrate) is 2000 nm or less.

[0076] This can suppress the release of adsorption between the back of the substrate and the adsorption stage.

[0077] As a result, by using an adsorption stage to adsorb the surface (back side of the substrate) of the semiconductor device manufacturing wafer that has been attached to the semiconductor chip assembly at a temperature below 0°C, and by using the adsorption stage and the pushing member to push it upward from the substrate side to expand it, the film adhesive can be cut with good precision at the target position, and poor cutting can be suppressed.

[0078] Furthermore, it is easier to pick up the semiconductor device manufacturing wafer when the back side of the substrate is adsorbed by the adsorption stage, the entire area of ​​the wafer with the interlayer and film adhesive is pushed up from the substrate side by the adsorption stage and the push member, and the surface of the semiconductor chip is adsorbed and lifted by the pull tool.

[0079] Furthermore, when using the semiconductor device manufacturing wafer of this embodiment as a die-casting wafer and performing dicing (stealth dicing) accompanied by the formation of a modifier layer in the semiconductor wafer, since the semiconductor device manufacturing wafer has the intermediate layer, it is possible to suppress dicing defects by then stretching the semiconductor device manufacturing wafer in a direction parallel to its surface (e.g., the surface of the film adhesive attached to the semiconductor chip) in a so-called expansion.

[0080] As described above, the semiconductor device manufacturing wafer of this embodiment can suppress the generation of cutting chips from the substrate and intermediate layer during blade cutting, and can suppress poor cutting of the film adhesive during the expansion process. It has the characteristic of suppressing the generation of defects when dividing semiconductor wafers, and has excellent dicing suitability for semiconductor wafers.

[0081] On the other hand, when the semiconductor device manufacturing wafer of this embodiment is used for cutting solid wafers and for blade cutting, since the semiconductor device manufacturing wafer has the intermediate layer, it is possible to easily prevent the blade from reaching the substrate and suppress the generation of whisker-like cutting chips (also known as: whisker-like material, hereinafter, not limited to cutting chips from the substrate, sometimes simply referred to as "cutting chips") from the substrate. Furthermore, by making the main component of the intermediate layer that is cut by the blade a non-silicone resin with a weight average molecular weight of 100,000 or less, and especially by making the weight average molecular weight of 100,000 or less, the generation of cutting chips from the intermediate layer can also be suppressed.

[0082] Unless otherwise specified in this specification, "weight-average molecular weight" refers to the converted value of polystyrene determined by gel permeation chromatography (GPC).

[0083] The method of using the semiconductor device manufacturing wafer of this embodiment will be described in detail later.

[0084] Hereinafter, with reference to the accompanying drawings, the semiconductor device manufacturing wafer of this embodiment will be described in detail. Furthermore, for ease of understanding of the features of the present invention, important parts of the figures used in the following description may be shown enlarged, and the dimensional ratios of the constituent elements may not be the same as the actual figures.

[0085] Figure 1 For illustrative purposes, a cross-sectional view of a semiconductor device manufacturing wafer according to one embodiment of the present invention is shown. Figure 2 for Figure 1 The diagram shows a top view of a semiconductor device manufacturing wafer.

[0086] In addition, Figure 2 In subsequent figures, for components that are the same as those shown in the previously described figures, the same reference numerals are used as in the previously described figures, and their detailed descriptions are omitted.

[0087] The semiconductor device manufacturing wafer 101 shown here includes a substrate 11 and is formed by sequentially laminating an adhesive layer 12, an intermediate layer 13, and a film adhesive 14 on the substrate 11. The semiconductor device manufacturing wafer 101 further includes a release film 15 on the side of the film adhesive 14 opposite to the side where the intermediate layer 13 is provided (hereinafter, sometimes referred to as the "first side") 14a.

[0088] In the semiconductor device manufacturing wafer 101, an adhesive layer 12 is provided on one side (sometimes referred to as the "first side" in this specification) 11a of the substrate 11. An intermediate layer 13 is provided on the side of the adhesive layer 12 opposite to the side where the substrate 11 is provided (sometimes referred to as the "first side" in this specification). A film-like adhesive 14 is provided on the side of the intermediate layer 13 opposite to the side where the adhesive layer 12 is provided (sometimes referred to as the "first side" in this specification). A release film 15 is provided on the first side 14a of the film-like adhesive 14. Thus, the semiconductor device manufacturing wafer 101 is constructed by sequentially stacking the substrate 11, the adhesive layer 12, the intermediate layer 13, and the film-like adhesive 14 along their thickness directions.

[0089] The semiconductor device manufacturing wafer 101 is used in such a way that, with the release film 15 removed, the first side 14a of the film adhesive 14 in the semiconductor device manufacturing wafer 101 is attached to the back side of a semiconductor wafer, a semiconductor chip, or an incompletely diced semiconductor wafer (not shown).

[0090] In this specification, regardless of whether it is a semiconductor wafer or a semiconductor chip, the side on which the circuit is formed is referred to as the "circuit forming side", and the side opposite to the circuit forming side is referred to as the "back side".

[0091] In this specification, a laminate consisting of a substrate and an adhesive layer stacked along their thickness direction, without an intermediate layer, is sometimes referred to as a "support sheet". Figure 1 In the figure, reference numeral 1 is used to indicate the support piece.

[0092] In addition, a laminate consisting of a substrate, an adhesive layer, and an intermediate layer stacked sequentially along their thickness direction is called a "laminated sheet". Figure 1 The reference numeral 10 in the accompanying drawings indicates a laminated sheet. The laminate containing the support sheet and the intermediate layer is included in the laminated sheet.

[0093] The surface of the substrate opposite to the side containing the adhesive layer. Figure 1 The maximum cross-sectional height Rt of the back side 11b) of the substrate is 2000 nm or less, preferably 1800 nm or less, and more preferably 1600 nm or less.

[0094] By making the maximum cross-sectional height Rt of the back side 11b of the substrate below the upper limit value, the disengagement of the adsorption between the substrate and the adsorption table when adsorbing the back side of the substrate using the adsorption table can be suppressed.

[0095] By suppressing the release of adhesion between the back side of the substrate and the adsorption stage, the process of heating the periphery of the semiconductor chip in the laminate that is not covered with a film-like adhesive can be performed more precisely. This allows for maintaining the distance (i.e., the kerf width) between adjacent semiconductor chips.

[0096] Furthermore, by suppressing the release of adsorption between the back side of the substrate and the adsorption stage, it is easier to pick up the semiconductor device manufacturing wafer when the back side of the substrate is adsorbed by the adsorption stage and the entire area of ​​the wafer with the interlayer and film adhesive is pushed up from the substrate side by the adsorption stage and the push member, and the surface of the semiconductor chip is picked up by adsorbing and lifting it with the pull tool.

[0097] The lower limit of the maximum cross-sectional height Rt of the back side 11b of the substrate is not particularly limited, for example, it can be set to 100nm.

[0098] The surface roughness Ra of the back side 11b of the substrate is preferably 200 nm or less, more preferably 175 nm or less, and even more preferably 150 nm or less.

[0099] By setting the surface roughness Ra of the back side 11b of the substrate to below the upper limit value, it is possible to suppress the release of adsorption between the substrate and the adsorption stage when the back side of the substrate is adsorbed using the adsorption stage after expansion. This allows for the maintenance of the cut width.

[0100] The lower limit of the surface roughness Ra of the back side 11b of the substrate is not particularly limited, for example, it can be set to 5 nm.

[0101] Generally, the smaller the size of a semiconductor chip, the larger the ratio of the area of ​​the gap between adjacent semiconductor chips to the total area of ​​the wafer used in semiconductor device manufacturing becomes, making it increasingly difficult to use an adsorption stage to adsorb the back side of the substrate.

[0102] Even when the semiconductor device manufacturing wafer 101 of this embodiment has a usage area of ​​9 mm², 2 In the case of the following semiconductor chips, the detachment of the adsorption between the substrate and the adsorption stage can also be effectively suppressed.

[0103] Preferred: The haze of the support sheet is above 10, or the total light transmittance of the support sheet is below 70%.

[0104] More preferably: the haze of the support sheet is 11 or higher, or the total light transmittance of the support sheet is 65% or lower.

[0105] More preferably, the haze of the support sheet is 11.5 or higher, or the total light transmittance of the support sheet is 63% or lower.

[0106] There is no specific upper limit to the haze of the support sheet; for example, it can be set to 50.

[0107] There is no specific limit to the lower limit of the total light transmittance of the support sheet; for example, it can be set to 30%.

[0108] When attaching a semiconductor device manufacturing die to a semiconductor chipset, a tape mounter is used, as detailed below. At this time, the tape mounter identifies the periphery of the area (non-laminated area) of the unlaminated intermediate layer 13 and film adhesive 14 on the first surface 12a of the adhesive layer 12.

[0109] By ensuring that the haze of the support sheet is above the lower limit or below the upper limit, identification of the periphery of the non-laminated area based on the laminating machine becomes easier. As a result, semiconductor device manufacturing wafers can be attached to semiconductor wafers more accurately.

[0110] When viewed from above, the intermediate layer 13 and the film adhesive 14 are both circular in shape, and the diameter of the intermediate layer 13 is the same as the diameter of the film adhesive 14.

[0111] Furthermore, in the semiconductor device manufacturing wafer 101, the intermediate layer 13 and the film adhesive 14 are arranged such that their centers are aligned, in other words, the outer peripheries of the intermediate layer 13 and the film adhesive 14 are aligned in their radial directions.

[0112] The areas of the first surface 13a of the intermediate layer 13 and the first surface 14a of the film adhesive 14 are both smaller than the first surface 12a of the adhesive layer 12. Furthermore, the width W of the intermediate layer 13... 13 The maximum value (i.e., diameter) is related to the width W of the film adhesive 14. 14 The maximum value (i.e., diameter) is smaller than the maximum value of the width of the adhesive layer 12 and the maximum value of the width of the substrate 11. Therefore, in the semiconductor device manufacturing wafer 101, a portion of the first surface 12a of the adhesive layer 12 is not covered by the intermediate layer 13 and the film adhesive 14. The release film 15 is in direct contact with and stacked on this unstacked area of ​​the first surface 12a of the adhesive layer 12. When the release film 15 is removed, this area is exposed (hereinafter, in this specification, this area is sometimes referred to as the "non-stacked area").

[0113] In addition, in the semiconductor device manufacturing wafer 101 equipped with the release film 15, there may be areas of the adhesive layer 12 that are not covered by the intermediate layer 13 and the film adhesive 14, as shown here, or there may be areas of the release film 15 that are not stacked.

[0114] The semiconductor device manufacturing wafer 101, which is in a state where the film adhesive 14 is not cut and is attached to the semiconductor wafer or semiconductor chip by the film adhesive 14, can be fixed by attaching a portion of the non-stacked area of ​​the adhesive layer 12 therein to a jig such as an annular frame for fixing the semiconductor wafer. Therefore, it is not necessary to provide a separate jig adhesive layer on the semiconductor device manufacturing wafer 101 for fixing the semiconductor device manufacturing wafer 101 to the jig. Furthermore, since it is not necessary to provide a jig adhesive layer, the semiconductor device manufacturing wafer 101 can be manufactured efficiently and at low cost.

[0115] While the semiconductor device manufacturing wafer 101 achieves beneficial effects by not having a fixture adhesive layer as described above, it may also have a fixture adhesive layer. In this case, the fixture adhesive layer is disposed in a region near the periphery of the surface of any layer constituting the semiconductor device manufacturing wafer 101. Examples of such regions include the non-stacked region on the first surface 12a of the adhesive layer 12.

[0116] The adhesive layer for the clamp can be a known adhesive layer for clamps, such as a single-layer structure containing adhesive components, or a multi-layer structure in which layers containing adhesive components are stacked on both sides of the sheet that serves as the core material.

[0117] Furthermore, when the semiconductor device manufacturing wafer 101 is stretched in a direction parallel to its surface (e.g., the first surface 12a of the adhesive layer 12) in the manner described below, i.e., when it is so-called extended, the semiconductor device manufacturing wafer 101 can be easily extended because of the non-stacked region on the first surface 12a of the adhesive layer 12. Moreover, not only can the film adhesive 14 be easily cut, but sometimes the peeling of the intermediate layer 13 and the film adhesive 14 from the adhesive layer 12 can also be prevented.

[0118] In the semiconductor device manufacturing wafer 101, the intermediate layer 13 contains a non-silicone resin with a weight average molecular weight of less than 100,000 as the main component.

[0119] The semiconductor device manufacturing wafer in this embodiment is not limited to Figure 1 and Figure 2 The semiconductor device manufacturing wafer shown can be used to manufacture semiconductor devices without compromising the effects of the present invention. Figure 1 and Figure 2 The components of the semiconductor device manufacturing wafer shown may be changed, deleted, or added.

[0120] For example, the semiconductor device manufacturing wafer of this embodiment may also include other layers that are not among the substrate, adhesive layer, intermediate layer, film adhesive, release film, and clamping adhesive layer. However, the semiconductor device manufacturing wafer of this embodiment is preferably as follows: Figure 1 As shown, an adhesive layer is provided in a state where the adhesive layer is in direct contact with the substrate, an intermediate layer is provided in a state where the intermediate layer is in direct contact with the adhesive layer, and a film adhesive is provided in a state where the film adhesive is in direct contact with the intermediate layer.

[0121] For example, in the semiconductor device manufacturing wafer of this embodiment, the planar shapes of the intermediate layer and the film adhesive can be shapes other than circular, and the planar shapes of the intermediate layer and the film adhesive can be the same as each other or different from each other. Furthermore, it is preferable that the area of ​​the first surface of the intermediate layer and the first surface of the film adhesive are both smaller than the area of ​​the surface of the layer closer to the substrate (e.g., the first surface of the adhesive layer), and the areas of the first surface of the intermediate layer and the first surface of the film adhesive can be the same as each other or different from each other. Moreover, the outer periphery positions of the intermediate layer and the film adhesive can be the same or different in their radial directions.

[0122] Next, the various layers of the semiconductor device manufacturing wafer constituting this embodiment will be described in more detail.

[0123] ○ Substrate

[0124] The substrate is in sheet or film form.

[0125] The maximum cross-sectional height Rt of the surface of the substrate opposite to the side having the adhesive layer (the back side of the substrate) is 2000 nm or less, preferably 1800 nm or less, and more preferably 1600 nm or less.

[0126] The lower limit of the maximum cross-sectional height Rt of the substrate surface opposite to the side with the adhesive layer (the back side of the substrate) is not particularly limited, for example, it can be set to 100 nm.

[0127] The surface roughness Ra of the surface of the substrate opposite to the side having the adhesive layer (the back side of the substrate) is preferably 200 nm or less, more preferably 175 nm or less, and even more preferably 150 nm or less.

[0128] The lower limit of the surface roughness Ra of the substrate (the back side of the substrate) is not particularly limited, for example, it can be set to 5 nm.

[0129] The aforementioned substrate can be manufactured, for example, by adding the raw material substrate between two rollers and passing the raw material substrate between the roller surfaces while rotating the two rollers.

[0130] By adjusting the Rt and Ra of the roller surface that contacts the raw material substrate, it is possible to manufacture a substrate with the desired Rt and Ra.

[0131] Alternatively, the aforementioned substrate can also be manufactured by pressing the raw material substrate onto the surface of a roller, a process known as stamping. By adjusting the Rt and Ra of the roller surface, a substrate with the desired Rt and Ra can be manufactured.

[0132] The constituent material of the substrate is preferably a variety of resins, specifically, examples include polyethylene (low-density polyethylene (LDPE), linear low-density polyethylene (LLDPE), high-density polyethylene (HDPE), etc.), polypropylene (PP), polybutene, polybutadiene, polymethylpentene, styrene-ethylene-butene-styrene block copolymer, polyvinyl chloride, vinyl chloride copolymer, polyethylene terephthalate (PET), polybutylene terephthalate (PBT), polyurethane, polyurethane acrylate, polyimide (PI), ionomer resin, ethylene-(meth)acrylic acid copolymer, ethylene-(meth)acrylic acid copolymer, ethylene copolymer other than ethylene-(meth)acrylic acid copolymer and ethylene-(meth)acrylic acid copolymer, polystyrene, polycarbonate, fluororesin, hydrogenated, modified, crosslinked or copolymerized resins of any of the above resins, etc.

[0133] In addition, in this specification, "(meth)acrylic acid" is a concept that includes both "acrylic acid" and "methacrylic acid". Similar terms to "(meth)acrylic acid" are also used; for example, "(meth)acrylate" includes both "acrylate" and "methacrylate", and "(meth)acryloyl" includes both "acryloyl" and "methacryloyl".

[0134] The resin constituting the substrate can be of only one type or two or more types. When there are two or more types, their combination and ratio can be arbitrarily selected.

[0135] The substrate can consist of one layer (single layer) or multiple layers (two or more layers). When the substrate consists of multiple layers, these multiple layers can be the same as each other or different from each other. There are no particular limitations on the combination of these multiple layers as long as it does not impair the effect of the present invention.

[0136] In this specification, the term "multiple layers may be the same as each other or different from each other" means "all layers may be the same, all layers may be different, or only some layers may be the same". Furthermore, "multiple layers may be different from each other" means "at least one of the constituent materials and thicknesses of each layer is different from each other".

[0137] The thickness of the substrate can be appropriately selected according to the purpose, preferably 50 to 300 μm, more preferably 60 to 150 μm. By making the substrate thickness above the lower limit, the structure of the substrate is more stable. By making the substrate thickness below the upper limit, the film adhesive can be cut more easily when performing blade cutting and when expanding the wafer for semiconductor device manufacturing.

[0138] Here, "thickness of substrate" refers to the overall thickness of the substrate. For example, the thickness of a substrate composed of multiple layers refers to the total thickness of all the layers that make up the substrate.

[0139] To improve the adhesion between the substrate and other layers such as the adhesive layer disposed thereon, the surface of the substrate can be subjected to surface treatments such as sandblasting, solvent treatment, embossing, corona discharge treatment, electron beam irradiation treatment, plasma treatment, ozone / ultraviolet irradiation treatment, flame treatment, chromic acid treatment, hot air treatment, etc.

[0140] The surface of the substrate can also be treated with a primer.

[0141] The substrate may also have: an antistatic coating; a layer that prevents the substrate from adhering to other sheets or to the adsorption stage when the wafer is stacked and stored.

[0142] In addition to the main constituent materials such as the resin, the substrate may also contain various known additives such as fillers, colorants, antistatic agents, antioxidants, organic lubricants, catalysts, and softeners (plasticizers).

[0143] Preferably, the haze of the support sheet, which is composed of a substrate and an adhesive layer, is 10 or higher, or the total light transmittance of the support sheet is 70% or less.

[0144] The substrate may contain one or more of the following: selected from the group consisting of filler materials and colorants.

[0145] As fillers and colorants that can be included in the substrate, examples of fillers and colorants for adhesive compositions described later can be listed.

[0146] By including filler material in the substrate, the haze of the support sheet can be adjusted to the desired value.

[0147] By including a colorant in the substrate, the total light transmittance of the support sheet can be adjusted to the desired value.

[0148] There are no particular limitations on the optical properties of the substrate, provided that they do not impair the effects of the invention. For example, the substrate may be a substrate that allows laser light or energy rays to pass through.

[0149] The substrate can be manufactured using known methods. For example, a resin-containing substrate (with resin as a constituent material) can be manufactured by molding the resin or a resin composition containing the resin.

[0150] ○Adhesive layer

[0151] The adhesive layer is in sheet or film form and contains adhesive.

[0152] The adhesive layer can be formed using an adhesive composition containing the adhesive. For example, the adhesive composition is applied to the surface of the object to which the adhesive layer is to be formed, and then dried as needed, thereby forming an adhesive layer at the target location.

[0153] In the adhesive layer, the total content of one or more of the components described below in the adhesive layer is no more than 100% by mass relative to the total mass of the adhesive layer.

[0154] Similarly, in the adhesive composition, the total content of one or more of the ingredients described below in the adhesive composition is not more than 100 by mass relative to the total mass of the adhesive composition.

[0155] Preferably, the haze of the support sheet, which is composed of a substrate and an adhesive layer, is 10 or higher, or the total light transmittance of the support sheet is 70% or less.

[0156] The adhesive composition can be coated using known methods, such as air knife coating machines, scraper coating machines, bar coating machines, gravure coating machines, roller coating machines, roller knife coating machines, curtain coating machines, mold coating machines, doctor blade coating machines, screen coating machines, Mayer bar coating machines, kiss coating machines, and other coating machines.

[0157] There are no particular limitations on the drying conditions of the adhesive composition, but when the adhesive composition contains the solvent described later, it is preferable to heat it for drying, for example, preferably at 70 to 130°C for 10 seconds to 5 minutes.

[0158] Examples of adhesives include acrylic resins, urethane resins, rubber resins, silicone resins, epoxy resins, polyethylene ethers, polycarbonates, ester resins, and other adhesive resins, with acrylic resins being preferred.

[0159] Furthermore, in this specification, "adhesive resin" includes both adhesive resins and bonding resins. For example, the adhesive resin includes not only resins that are adhesive in themselves, but also resins that exhibit adhesiveness when used in conjunction with other components such as additives, or resins that exhibit bonding due to the presence of triggers such as heat or water.

[0160] The adhesive layer can be either curable or non-curable, for example, either energy-curable or non-energy-curable. Curable adhesive layers allow for easy adjustment of their properties before and after curing.

[0161] In this specification, "energy rays" refers to rays containing energy quanta within electromagnetic waves or beams of charged particles. Examples of energy rays include ultraviolet light, radiation, and electron beams. For instance, ultraviolet light can be emitted by using a high-pressure mercury lamp, fusion lamp, xenon lamp, black light lamp, or LED lamp as the ultraviolet light source. Electron beams can be emitted by irradiating with electron beams generated using electron beam accelerators or similar devices.

[0162] Furthermore, in this specification, "energy-ray curing property" refers to the property of curing by irradiation with energy rays, and "non-energy-ray curing property" refers to the property of not curing even when irradiated with energy rays.

[0163] The adhesive layer can consist of one layer (single layer) or multiple layers (two or more layers). When it consists of multiple layers, these multiple layers can be the same as each other or different from each other, and there are no particular restrictions on the combination of these multiple layers.

[0164] The thickness of the adhesive layer is preferably 1 to 100 μm, more preferably 1 to 60 μm, and particularly preferably 1 to 30 μm.

[0165] The "thickness of the adhesive layer" refers to the overall thickness of the adhesive layer. For example, the thickness of an adhesive layer consisting of multiple layers refers to the total thickness of all the layers that make up the adhesive layer.

[0166] There are no particular limitations on the optical properties of the adhesive layer, provided that they do not impair the effects of the invention. For example, the adhesive layer may be an adhesive layer that allows energy rays to pass through.

[0167] Next, the adhesive composition will be described.

[0168] <<Adhesive Composition>>

[0169] When the adhesive layer is energy-curable, examples of adhesive compositions containing energy-curable adhesives, i.e., energy-curable adhesive compositions, include: an adhesive composition (I-1) containing a non-energy-curable adhesive resin (I-1a) (hereinafter sometimes abbreviated as "adhesive resin (I-1a)") and an energy-curable compound; an adhesive composition (I-2) containing an energy-curable adhesive resin (I-2a) (hereinafter sometimes abbreviated as "adhesive resin (I-2a)") with unsaturated groups introduced into the side chains of the non-energy-curable adhesive resin (I-1a); and an adhesive composition (I-3) containing the aforementioned adhesive resin (I-2a) and an energy-curable compound.

[0170] <Adhesive Composition (I-1)>

[0171] As described above, the adhesive composition (I-1) contains a non-energy-curable adhesive resin (I-1a) and an energy-curable compound.

[0172] [Adhesive resin (I-1a)]

[0173] Preferably, the adhesive resin (I-1a) is an acrylic resin.

[0174] Examples of acrylic resins include acrylic polymers having at least structural units derived from (meth)acrylate alkyl esters.

[0175] The acrylic resin may have only one structural unit or two or more structural units. When there are two or more structural units, their combination and ratio can be arbitrarily selected.

[0176] The adhesive composition (I-1) may contain only one type of adhesive resin (I-1a) or two or more types. When there are two or more types, their combination and ratio can be arbitrarily selected.

[0177] In the adhesive composition (I-1), the content of the adhesive resin (I-1a) relative to the total mass of the adhesive composition (I-1) is preferably 5 to 99% by mass, more preferably 10 to 95% by mass, and particularly preferably 15 to 90% by mass.

[0178] [Energy-cured compounds]

[0179] The energy-curable compound contained in the adhesive composition (I-1) can be exemplified by monomers or oligomers having energy-curable unsaturated groups and being curable by energy irradiation.

[0180] Monomers used in energy-curable compounds include, for example, trimethylolpropane tri(meth)acrylate, pentaerythritol(meth)acrylate, pentaerythritol tetra(meth)acrylate, dipentaerythritol hexa(meth)acrylate, 1,4-butanediol di(meth)acrylate, 1,6-hexanediol(meth)acrylate, and other poly(meth)acrylates; urethane (meth)acrylates; polyester (meth)acrylates; polyether (meth)acrylates; epoxy (meth)acrylates, etc.

[0181] Oligomers in energy-ray-curable compounds include, for example, oligomers formed by the polymerization of monomers as exemplified above.

[0182] In terms of the larger molecular weight and the fact that it does not easily reduce the storage modulus of the adhesive layer, the preferred energy-curable compounds are urethane (meth)acrylates and urethane (meth)acrylate oligomers.

[0183] The adhesive composition (I-1) may contain only one or more energy-curable compounds, and when there are two or more, their combination and ratio can be arbitrarily selected.

[0184] In the adhesive composition (I-1), the content of the energy-curable compound relative to the total mass of the adhesive composition (I-1) is preferably 1 to 95% by mass, more preferably 5 to 90% by mass, and particularly preferably 10 to 85% by mass.

[0185] The adhesive composition (I-1) preferably contains one or more of the group consisting of filler materials and colorants.

[0186] By including filler material in the adhesive composition (I-1), the haze of the support sheet can be adjusted to the desired value.

[0187] By including a colorant in the adhesive composition (I-1), the total light transmittance of the support sheet can be adjusted to the desired value.

[0188] [Filling Material]

[0189] When using filler materials, examples of well-known filler materials include organic fillers and inorganic fillers. Organic fillers are preferred.

[0190] There are no particular restrictions on the use of organic fillers; any known organic filler materials may be used. Examples of organic fillers include styrene-type particles, butadiene-type particles, acrylic-type particles, rubber particles, silicone resin particles, silicone rubber particles, and other organosilicon composite particles.

[0191] The organic filler material is preferably organosilicon composite particles, and more preferably silicone resin particles.

[0192] There are no particular restrictions on the use of inorganic filler materials; any known inorganic filler materials may be used.

[0193] Examples of inorganic filler materials include powders such as silica, alumina, talc, calcium carbonate, titanium dioxide, red iron oxide, silicon carbide, and boron nitride; beads formed by spherizing these inorganic filler materials; surface modifiers of these inorganic filler materials; single-crystal fibers of these inorganic filler materials; and glass fibers.

[0194] The inorganic filler material is preferably silicon dioxide or aluminum oxide, and more preferably silicon dioxide.

[0195] The adhesive composition (I-1) may contain only one type of filler or two or more types of fillers. When there are two or more types of fillers, their combination and ratio can be arbitrarily selected.

[0196] When using a filler material, in the adhesive composition (I-1), the content of the filler material is preferably 0.01 to 50 parts by mass relative to 100 parts by mass of the adhesive resin (I-1a), more preferably 0.1 to 20 parts by mass, and particularly preferably 0.3 to 15 parts by mass.

[0197] [Coloring agent]

[0198] Examples of known colorants include inorganic pigments, organic pigments, and organic dyes. Inorganic pigments are preferred as colorants.

[0199] Examples of organic pigments and dyes include, for example, aminium pigments, anthocyanin pigments, croconium pigments, squarylium pigments, azulenium pigments, polymethystylene pigments, naphthoquinone pigments, pyranium pigments, phthalocyanine pigments, naphthocyanin pigments, naphtholactam pigments, azo pigments, and condensed azo pigments. Indigo pigments, perinone pigments, perylene pigments, dioxazine pigments, quinacridone pigments, isoindolineone pigments, quinolineone pigments, pyrrole pigments, thioindigo pigments, metal complex pigments (metal complex salt dyes), dithiol metal complex pigments, indolephenol pigments, triarylmethane pigments, anthraquinone pigments, dioxazine pigments, naphthol pigments, azomethyl alkaloid pigments, benzimidazole ketone pigments, pinantrone pigments, and threne pigments, etc.

[0200] Examples of inorganic pigments include carbon black, cobalt pigments, iron pigments, chromium pigments, titanium pigments, vanadium pigments, zirconium pigments, molybdenum pigments, ruthenium pigments, platinum pigments, ITO (indium tin oxide) pigments, and ATO (antimony tin oxide) pigments. Among these, carbon black is preferred.

[0201] The adhesive composition may contain only one colorant or two or more colorants. When there are two or more colorants, their combination and ratio can be arbitrarily selected.

[0202] When using a colorant, in the adhesive composition (I-1), the content of the colorant is preferably 0.01 to 50 parts by mass relative to 100 parts by mass of the adhesive resin (I-1a), more preferably 0.1 to 20 parts by mass, and particularly preferably 0.3 to 15 parts by mass.

[0203] [Cross-linking agent]

[0204] When the acrylic polymer, in addition to having structural units from alkyl methacrylates, is used as an adhesive resin (I-1a), the adhesive composition (I-1) preferably further contains a crosslinking agent.

[0205] The crosslinking agent, for example, crosslinks the adhesive resins (I-1a) with each other by reacting with the functional groups.

[0206] Examples of crosslinking agents include isocyanate crosslinking agents (crosslinking agents with isocyanate groups) such as toluene diisocyanate, hexamethylene diisocyanate, phenyl diisocyanate, and adducts of these diisocyanates; epoxy crosslinking agents (crosslinking agents with glycidyl groups) such as ethylene glycol glycidyl ether; aziridinium crosslinking agents (crosslinking agents with aziridinium groups) such as hexa[1-(2-methyl)-aziridinyl]triphosphatriazine; metal chelate crosslinking agents (crosslinking agents with metal chelate structures) such as aluminum chelates; and isocyanurate crosslinking agents (crosslinking agents with isocyanuric acid backbones).

[0207] Based on the factors of increasing the cohesive force of the adhesive and thus improving the adhesion of the adhesive layer, and its ease of availability, isocyanate crosslinking agents are preferred.

[0208] The adhesive composition (I-1) may contain only one crosslinking agent or two or more crosslinking agents. When there are two or more crosslinking agents, their combination and ratio can be arbitrarily selected.

[0209] When a crosslinking agent is used, in the adhesive composition (I-1), the content of the crosslinking agent is preferably 0.01 to 50 parts by mass relative to 100 parts by mass of the adhesive resin (I-1a), more preferably 0.1 to 20 parts by mass, and particularly preferably 0.3 to 15 parts by mass.

[0210] [Photopolymerization initiator]

[0211] The adhesive composition (I-1) may further contain a photopolymerization initiator. Even when irradiated with low-energy rays such as ultraviolet light, the adhesive composition (I-1) containing the photopolymerization initiator can undergo a sufficient curing reaction.

[0212] Examples of photopolymerization initiators include benzoin compounds such as benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzoin isobutyl ether, benzoin benzoic acid, benzoin methyl benzoate, and benzoin dimethyl ketal; acetophenone compounds such as 2-hydroxy-2-methyl-1-phenyl-propane-1-one and 2,2-dimethoxy-1,2-diphenylethane-1-one; and phenylbis(2,4,6-trimethylbenzoyl)phosphine oxide and 2,4,6-trimethylbenzoyl diphenylphosphine oxide. Acylphosphine oxides; benzylphenyl sulfide, tetramethylthiuram monosulfide, and other sulfides; α-keto alcohols such as 1-hydroxycyclohexylphenyl ketone; azo compounds such as azobisisobutyronitrile; diacetic compounds such as diaceticotrope; thioxanthone compounds such as thioxanthone; peroxides; diketones such as butanedione; benzoylayl; dibenzoylayl; benzophenone; 2,4-diethylthioxanthone; 1,2-diphenylmethane; 2-hydroxy-2-methyl-1-[4-(-1-methylvinyl)phenyl]propanone; 2-chloroanthraquinone, etc.

[0213] In addition, quinone compounds such as 1-chloroanthraquinone and photosensitizers such as amines can also be used as photopolymerization initiators.

[0214] The photopolymerization initiator contained in the adhesive composition (I-1) may be only one type or two or more types. When there are two or more types, their combination and ratio can be arbitrarily selected.

[0215] When using a photopolymerization initiator, in the adhesive composition (I-1), the content of the photopolymerization initiator is preferably 0.01 to 20 parts by mass relative to 100 parts by mass of the energy-curable compound, more preferably 0.03 to 10 parts by mass, and particularly preferably 0.05 to 5 parts by mass.

[0216] [Other Additives]

[0217] The adhesive composition (I-1) may also contain other additives that are not among the above-mentioned components, to the extent that it does not impair the effects of the present invention.

[0218] Other additives mentioned above include, for example, well-known additives such as antistatic agents, antioxidants, softeners (plasticizers), fillers (fillers), rust inhibitors, colorants (pigments, dyes), sensitizers, thickeners, reaction delayers, and crosslinking promoters (catalysts).

[0219] A reaction delaying agent is, for example, a component used to suppress unintended crosslinking reactions in the stored adhesive composition (I-1) due to the action of a catalyst incorporated into the adhesive composition (I-1). Examples of reaction delaying agents include those that form chelate complexes using chelates corresponding to the catalyst; more specifically, examples include reaction delaying agents having two or more carbonyl groups (-C(=O)-) in one molecule.

[0220] The adhesive composition (I-1) may contain only one other additive or two or more additives. When there are two or more additives, their combination and ratio can be arbitrarily selected.

[0221] The content of other additives in the adhesive composition (I-1) is not particularly limited; they can be selected appropriately according to their type.

[0222] [solvent]

[0223] The adhesive composition (I-1) may contain a solvent. By containing a solvent, the coating suitability of the adhesive composition (I-1) to the object surface is improved.

[0224] The solvent is preferably an organic solvent.

[0225] <Adhesive Composition (I-2)>

[0226] As described above, the adhesive composition (I-2) contains an energy-curable adhesive resin (I-2a) with unsaturated groups introduced into the side chains of a non-energy-curable adhesive resin (I-1a).

[0227] [Adhesive resin (I-2a)]

[0228] The adhesive resin (I-2a) can be obtained, for example, by reacting a compound containing unsaturated groups with energy-ray polymerizable unsaturated groups with the functional groups in the adhesive resin (I-1a).

[0229] The unsaturated group compound is a compound that, in addition to having the energy-ray polymerizable unsaturated group, further has a group that can bond with the adhesive resin (I-1a) by reacting with the functional groups in the adhesive resin (I-1a).

[0230] Examples of polymerizable unsaturated groups that can be used as energy-ray polymerizable groups include (meth)acryloyl, vinyl (ethene), allyl (2-propenyl), etc., with (meth)acryloyl being preferred.

[0231] Examples of functional groups that can bond with the adhesive resin (I-1a) include isocyanate groups and glycidyl groups that can bond with hydroxyl or amino groups, as well as hydroxyl and amino groups that can bond with carboxyl or epoxy groups.

[0232] Examples of compounds containing unsaturated groups include (meth)acryloyloxyethyl isocyanate, (meth)acryloyl isocyanate, and (meth)acrylate glycidyl ester.

[0233] The adhesive composition (I-2) may contain only one type of adhesive resin (I-2a) or two or more types. When there are two or more types, their combination and ratio can be arbitrarily selected.

[0234] In the adhesive composition (I-2), the content of the adhesive resin (I-2a) relative to the total mass of the adhesive composition (I-2) is preferably 5 to 99% by mass, more preferably 10 to 95% by mass, and particularly preferably 10 to 90% by mass.

[0235] The adhesive composition (I-2) preferably contains one or more of the group consisting of filler materials and colorants.

[0236] By including filler material in the adhesive composition (I-2), the haze of the support sheet can be adjusted to the desired value.

[0237] By including a colorant in the adhesive composition (I-2), the total light transmittance of the support sheet can be adjusted to the desired value.

[0238] [Filling Material]

[0239] The adhesive composition (I-2) may further contain filler material.

[0240] As filler materials that may be contained in adhesive composition (I-2), examples of filler materials that are the same as those in adhesive composition (I-1) can be listed.

[0241] The adhesive composition may contain only one type of filler or two or more types of fillers. When there are two or more types of fillers, their combination and ratio can be arbitrarily selected.

[0242] When using a filler material, in the adhesive composition (I-2), the content of the filler material is preferably 0.01 to 50 parts by mass relative to 100 parts by mass of the adhesive resin (I-2a), more preferably 0.1 to 20 parts by mass, and particularly preferably 0.3 to 15 parts by mass.

[0243] [Coloring agent]

[0244] The adhesive composition (I-2) may further contain a colorant.

[0245] As colorants that may be contained in the adhesive composition (I-2), examples of colorants that are the same as those in the adhesive composition (I-1) can be listed.

[0246] The adhesive composition may contain only one colorant or two or more colorants. When there are two or more colorants, their combination and ratio can be arbitrarily selected.

[0247] When using a colorant, in the adhesive composition (I-2), the content of the colorant is preferably 0.01 to 50 parts by mass relative to 100 parts by mass of the adhesive resin (I-2a), more preferably 0.1 to 20 parts by mass, and particularly preferably 0.3 to 15 parts by mass.

[0248] [Cross-linking agent]

[0249] For example, when the acrylic polymer having the same structural units from functional group monomers as in adhesive resin (I-1a) is used as adhesive resin (I-2a), the adhesive composition (I-2) may further contain a crosslinking agent.

[0250] As the crosslinking agent in the adhesive composition (I-2), the same crosslinking agents as those in the adhesive composition (I-1) can be listed.

[0251] The adhesive composition (I-2) may contain only one crosslinking agent or two or more crosslinking agents. When there are two or more crosslinking agents, their combination and ratio can be arbitrarily selected.

[0252] When a crosslinking agent is used, in the adhesive composition (I-2), the content of the crosslinking agent is preferably 0.01 to 50 parts by mass relative to 100 parts by mass of the adhesive resin (I-2a), more preferably 0.1 to 20 parts by mass, and particularly preferably 0.3 to 15 parts by mass.

[0253] [Photopolymerization initiator]

[0254] The adhesive composition (I-2) may further contain a photopolymerization initiator. Even when irradiated with low-energy rays such as ultraviolet light, the adhesive composition (I-2) containing the photopolymerization initiator can undergo a sufficient curing reaction.

[0255] As the photopolymerization initiator in the adhesive composition (I-2), the same photopolymerization initiator as that in the adhesive composition (I-1) can be listed.

[0256] The photopolymerization initiator contained in the adhesive composition (I-2) may be only one type or two or more types. When there are two or more types, their combination and ratio can be arbitrarily selected.

[0257] When using a photopolymerization initiator, in the adhesive composition (I-2), the content of the photopolymerization initiator is preferably 0.01 to 20 parts by mass relative to 100 parts by mass of the adhesive resin (I-2a), more preferably 0.03 to 10 parts by mass, and particularly preferably 0.05 to 5 parts by mass.

[0258] [Other additives, solvents]

[0259] The adhesive composition (I-2) may also contain other additives that are not among the above-mentioned components, to the extent that it does not impair the effects of the present invention.

[0260] In addition, for the same purpose as in the case of adhesive composition (I-1), adhesive composition (I-2) may also contain a solvent.

[0261] Other additives and solvents used in the adhesive composition (I-2) may be the same as those used in the adhesive composition (I-1). The adhesive composition (I-2) may contain only one or more other additives and solvents; when there are more than two, their combination and ratio can be arbitrarily selected.

[0262] The content of other additives and solvents in the adhesive composition (I-2) is not particularly limited, and can be selected appropriately according to their types.

[0263] <Adhesive Composition (I-3)>

[0264] As described above, the adhesive composition (I-3) contains the adhesive resin (I-2a) and an energy-curable compound.

[0265] In the adhesive composition (I-3), the content of the adhesive resin (I-2a) relative to the total mass of the adhesive composition (I-3) is preferably 5 to 99% by mass, more preferably 10 to 95% by mass, and particularly preferably 15 to 90% by mass.

[0266] [Energy-cured compounds]

[0267] As the energy-curable compound contained in the adhesive composition (I-3), examples include monomers or oligomers having energy-curable unsaturated groups that can be cured by irradiation with energy rays, and examples include energy-curable compounds that are the same as those contained in the adhesive composition (I-1).

[0268] The adhesive composition (I-3) may contain only one or more energy-curable compounds, and when there are two or more, their combination and ratio can be arbitrarily selected.

[0269] The adhesive composition (I-3) preferably contains one or more of the group consisting of filler materials and colorants.

[0270] By including filler material in the adhesive composition (I-3), the haze of the support sheet can be adjusted to the desired value.

[0271] By including a colorant in the adhesive composition (I-3), the total light transmittance of the support sheet can be adjusted to the desired value.

[0272] [Filling Material]

[0273] The adhesive composition (I-3) may further contain filler material.

[0274] As filler materials that may be contained in adhesive composition (I-3), examples of filler materials that are the same as those in adhesive composition (I-1) can be listed.

[0275] The adhesive composition may contain only one type of filler or two or more types of fillers. When there are two or more types of fillers, their combination and ratio can be arbitrarily selected.

[0276] When using a filler material, in the adhesive composition (I-3), the content of the filler material is preferably 0.01 to 50 parts by mass relative to 100 parts by mass of the adhesive resin (I-2a), more preferably 0.1 to 20 parts by mass, and particularly preferably 0.3 to 15 parts by mass.

[0277] [Coloring agent]

[0278] The adhesive composition (I-3) may further contain a colorant.

[0279] As colorants that may be contained in the adhesive composition (I-3), examples of colorants that are the same as those in the adhesive composition (I-1) can be listed.

[0280] The adhesive composition may contain only one colorant or two or more colorants. When there are two or more colorants, their combination and ratio can be arbitrarily selected.

[0281] When using a colorant, in the adhesive composition (I-3), the content of the colorant is preferably 0.01 to 50 parts by mass relative to 100 parts by mass of the adhesive resin (I-2a), more preferably 0.1 to 20 parts by mass, and particularly preferably 0.3 to 15 parts by mass.

[0282] In the adhesive composition (I-3), the content of the energy-curable compound is preferably 0.01 to 300 parts by mass relative to 100 parts by mass of the adhesive resin (I-2a), more preferably 0.03 to 200 parts by mass, and particularly preferably 0.05 to 100 parts by mass.

[0283] [Photopolymerization initiator]

[0284] The adhesive composition (I-3) may further contain a photopolymerization initiator. Even when irradiated with low-energy rays such as ultraviolet light, the adhesive composition (I-3) containing the photopolymerization initiator can undergo a sufficient curing reaction.

[0285] As the photopolymerization initiator in the adhesive composition (I-3), the same photopolymerization initiator as that in the adhesive composition (I-1) can be listed.

[0286] The photopolymerization initiator contained in the adhesive composition (I-3) may be only one type or two or more types. When there are two or more types, their combination and ratio can be arbitrarily selected.

[0287] When using a photopolymerization initiator, in the adhesive composition (I-3), the content of the photopolymerization initiator is preferably 0.01 to 20 parts by mass relative to 100 parts by mass of the total content of the adhesive resin (I-2a) and the energy ray curable compound, more preferably 0.03 to 10 parts by mass, and particularly preferably 0.05 to 5 parts by mass.

[0288] [Other additives, solvents]

[0289] The adhesive composition (I-3) may also contain other additives that are not among the above-mentioned components, to the extent that it does not impair the effects of the present invention.

[0290] In addition, for the same purpose as in the case of adhesive composition (I-1), adhesive composition (I-3) may also contain a solvent.

[0291] Other additives and solvents used in the adhesive composition (I-3) may be the same as those used in the adhesive composition (I-1). The adhesive composition (I-3) may contain only one or more other additives and solvents; when there are more than two, their combination and ratio can be arbitrarily selected.

[0292] The content of other additives and solvents in the adhesive composition (I-3) is not particularly limited, and can be selected appropriately according to their types.

[0293] <Adhesive compositions other than adhesive compositions (I-1) to (I-3)>

[0294] So far, adhesive compositions (I-1), (I-2), and (I-3) have been described in detail. However, the components described as their constituents can also be used in all other adhesive compositions (referred to in this specification as "adhesive compositions other than adhesive compositions (I-1) to (I-3)").

[0295] In addition to adhesive compositions (I-1) to (I-3), non-energy-ray-curable adhesive compositions may also be listed as adhesive compositions other than those that can be cured by energy rays.

[0296] Examples of non-energy-curable adhesive compositions include adhesive compositions (I-4) containing non-energy-curable adhesive resins such as acrylic resin, urethane resin, rubber resin, silicone resin, epoxy resin, polyethylene ether, polycarbonate, and ester resin (I-1a), with a preferred non-energy-curable adhesive composition containing acrylic resin.

[0297] Preferably, the adhesive composition other than adhesive compositions (I-1) to (I-3) contains one or more crosslinking agents, and their content can be set to be the same as that of the adhesive compositions (I-1) mentioned above.

[0298] <Adhesive Composition (I-4)>

[0299] As a preferred example of the adhesive composition (I-4), an adhesive composition containing the adhesive resin (I-1a) and a crosslinking agent can be cited, for example.

[0300] [Adhesive resin (I-1a)]

[0301] As the adhesive resin (I-1a) in the adhesive composition (I-4), the same adhesive resin as the adhesive resin (I-1a) in the adhesive composition (I-1) can be listed.

[0302] The adhesive composition (I-4) may contain only one type of adhesive resin (I-1a) or two or more types. When there are two or more types, their combination and ratio can be arbitrarily selected.

[0303] In the adhesive composition (I-4), the content of the adhesive resin (I-1a) relative to the total mass of the adhesive composition (I-4) is preferably 5 to 99% by mass, more preferably 10 to 95% by mass, and particularly preferably 15 to 90% by mass.

[0304] The adhesive composition (I-4) preferably contains one or more of the group consisting of filler materials and colorants.

[0305] By including filler material in the adhesive composition (I-4), the haze of the support sheet can be adjusted to the desired value.

[0306] By including a colorant in the adhesive composition (I-4), the total light transmittance of the support sheet can be adjusted to the desired value.

[0307] [Filling Material]

[0308] The adhesive composition (I-4) may further contain filler material.

[0309] As filler materials that may be contained in the adhesive composition (I-4), examples of filler materials that are the same as those in the adhesive composition (I-1) can be listed.

[0310] The adhesive composition may contain only one type of filler or two or more types of fillers. When there are two or more types of fillers, their combination and ratio can be arbitrarily selected.

[0311] When using a filler material, in the adhesive composition (I-4), the content of the filler material is preferably 0.01 to 50 parts by mass relative to 100 parts by mass of the adhesive resin (I-1a), more preferably 0.1 to 20 parts by mass, and particularly preferably 0.3 to 15 parts by mass.

[0312] [Coloring agent]

[0313] The adhesive composition (I-4) may further contain a colorant.

[0314] As colorants that may be contained in the adhesive composition (I-4), examples of colorants that are the same as those in the adhesive composition (I-1) can be listed.

[0315] The adhesive composition may contain only one colorant or two or more colorants. When there are two or more colorants, their combination and ratio can be arbitrarily selected.

[0316] When using a colorant, in the adhesive composition (I-4), the content of the colorant is preferably 0.01 to 50 parts by mass relative to 100 parts by mass of the adhesive resin (I-1a), more preferably 0.1 to 20 parts by mass, and particularly preferably 0.3 to 15 parts by mass.

[0317] [Cross-linking agent]

[0318] When the acrylic polymer having structural units from functionalized monomers in addition to structural units from (meth)acrylates is used as an adhesive resin (I-1a), the adhesive composition (I-4) preferably further contains a crosslinking agent.

[0319] As the crosslinking agent in the adhesive composition (I-4), the same crosslinking agents as those in the adhesive composition (I-1) can be listed.

[0320] The adhesive composition (I-4) may contain only one crosslinking agent or two or more crosslinking agents. When there are two or more crosslinking agents, their combination and ratio can be arbitrarily selected.

[0321] In the adhesive composition (I-4), the content of crosslinking agent is preferably 0.01 to 50 parts by mass, more preferably 0.1 to 25 parts by mass, and particularly preferably 0.1 to 10 parts by mass, relative to 100 parts by mass of adhesive resin (I-1a).

[0322] [Other additives, solvents]

[0323] The adhesive composition (I-4) may also contain other additives not belonging to any of the above-mentioned components, to the extent that it does not impair the effects of the present invention.

[0324] In addition, for the same purpose as in the case of adhesive composition (I-1), adhesive composition (I-4) may also contain a solvent.

[0325] Other additives and solvents used in the adhesive composition (I-4) may be the same as those used in the adhesive composition (I-1). The adhesive composition (I-4) may contain only one or more other additives and solvents; when there are more than two, their combination and ratio can be arbitrarily selected.

[0326] The content of other additives and solvents in the adhesive composition (I-4) is not particularly limited, and can be selected appropriately according to their types.

[0327] <<Preparation Method of Adhesive Composition>>

[0328] Adhesive compositions other than adhesive compositions (I-1) to (I-3), or adhesive compositions (I-4), can be obtained by incorporating the adhesive with other components other than the adhesive as needed to form the adhesive composition.

[0329] There is no particular restriction on the order of addition when mixing the components, and more than two components can be added at the same time.

[0330] When using a solvent, the component can be pre-diluted by mixing the solvent with any other component besides the solvent, or it can be used by mixing the solvent with any other component besides the solvent without pre-diluting it.

[0331] When blending, there are no particular limitations on the method of mixing the components. You may choose an appropriate method from the following known methods: mixing by rotating a stir bar or stirring blade; mixing by using a mixer; mixing by applying ultrasound, etc.

[0332] As long as the individual blended components do not deteriorate, there are no particular limitations on the temperature and time when adding and mixing the components; they can be adjusted appropriately. However, the preferred temperature is 15–30°C.

[0333] ○ Intermediate layer, composition for forming intermediate layer

[0334] The intermediate layer is in sheet or film form and contains the non-silicone resin as the main component.

[0335] The intermediate layer can be a layer containing only non-silicone resin (a layer formed of non-silicone resin), or a layer containing non-silicone resin and other components besides non-silicone resin.

[0336] The intermediate layer can be formed, for example, using an intermediate layer forming composition containing the aforementioned non-silicone resin. For instance, the intermediate layer can be formed on the target area by applying the intermediate layer forming composition to the surface on which the intermediate layer is to be formed and drying it as needed.

[0337] In the intermediate layer, the total content of one or more of the components described below in the intermediate layer is no more than 100% by mass relative to the total mass of the intermediate layer.

[0338] Similarly, in the intermediate layer forming composition, the total content of one or more of the components described below in the intermediate layer forming composition is not more than 100 by mass relative to the total mass of the intermediate layer forming composition.

[0339] The coating of the intermediate layer forming composition can be carried out by the same method as the coating of the adhesive composition described above.

[0340] There are no particular limitations on the drying conditions of the composition for forming the intermediate layer. When the composition for forming the intermediate layer contains the solvent described later, it is preferable to perform heat drying, for example, preferably at 60–130°C.

[0341] Dry for 1 to 6 minutes.

[0342] The weight-average molecular weight of the non-silicone resin is below 100,000.

[0343] From the point of view of further improving the slitting suitability of the semiconductor wafers used in the manufacture of the semiconductor device, the weight-average molecular weight of the non-silicone resin can be, for example, any range of 80,000 or less, 60,000 or less, and 40,000 or less.

[0344] There is no particular limitation on the lower limit of the weight average molecular weight of the non-silicone resin. For example, non-silicone resins with a weight average molecular weight of 5000 or more are easier to obtain.

[0345] The weight-average molecular weight of the non-silicone resin can be appropriately adjusted within a range set by any combination of the aforementioned lower and upper limits. For example, in one embodiment, the weight-average molecular weight can be any range from 5000 to 100000, 5000 to 80000, 5000 to 60000, and 5000 to 40000.

[0346] In this embodiment, "the intermediate layer contains a non-silicone resin with a weight average molecular weight of 100,000 or less as a main component" means "the non-silicone resin is contained in an amount sufficient to fully exert the effect of the non-silicone resin with a weight average molecular weight of 100,000 or less in the intermediate layer." From the above perspective, in the intermediate layer, the ratio of the content of the non-silicone resin to the total mass of the intermediate layer (in other words, in the composition for forming the intermediate layer, the ratio of the content of the non-silicone resin to the total content of all components except the solvent) is preferably 80% by mass or more, more preferably 90% by mass or more, and for example, it can be any range of 95% by mass or more, 97% by mass or more, and 99% by mass or more.

[0347] On the other hand, the ratio is less than 100% by mass.

[0348] The non-silicone resins with a weight average molecular weight of 100,000 or less are not particularly limited as long as they are resin components that do not have silicon atoms as constituent atoms and have a weight average molecular weight of 100,000 or less.

[0349] The non-silicone resin can be, for example, any one of a polar resin with polar groups and a non-polar resin without polar groups.

[0350] For example, the non-silicone resin is preferably a polar resin, based on its high solubility in the intermediate layer forming composition and its superior coating suitability.

[0351] Unless otherwise specified in this specification, "non-silicone resin" refers to the aforementioned non-silicone resin with a weight-average molecular weight of 100,000 or less.

[0352] The non-silicone resin can be, for example, a homopolymer of a polymer with one monomer (in other words, having only one structural unit) or a copolymer of polymers with two or more monomers (in other words, having two or more structural units).

[0353] Examples of such polar groups include carbonyloxy groups (-C(=O)-O-) and oxycarbonyl groups (-OC(=O)-).

[0354] The polar resin may have only structural units with polar groups, or it may have both structural units with polar groups and structural units without polar groups.

[0355] Examples of structural units with polar groups include those derived from vinyl acetate.

[0356] Examples of structural units that do not have polar groups include, for example, structural units derived from ethylene.

[0357] In the polar resin, the proportion of the mass of structural units having polar groups relative to the total mass of all structural units is preferably 5 to 70% by mass, for example, it can be any range from 7.5 to 55% by mass and 10 to 40% by mass. In other words, in the polar resin, the proportion of the mass of structural units without polar groups relative to the total mass of all structural units is preferably 30 to 95% by mass, for example, it can be any range from 45 to 92.5% by mass and 60 to 90% by mass. By making the proportion of the mass of structural units having polar groups above the lower limit, the polar resin more significantly possesses the characteristic of having polar groups. By making the proportion of the mass of structural units having polar groups below the upper limit, the polar resin more moderately possesses the characteristic of not having polar groups.

[0358] Examples of such polar resins include ethylene vinyl acetate copolymers.

[0359] Among the preferred polar resins, examples include those in which the mass ratio of vinyl acetate-derived structural units to the total mass of all structural units (sometimes referred to in this specification as "the content of vinyl acetate-derived structural units") in an ethylene-vinyl acetate copolymer is 10 to 40% by mass. In other words, examples of preferred polar resins include those in which the mass ratio of ethylene-derived structural units to the total mass of all structural units in an ethylene-vinyl acetate copolymer is 60 to 90% by mass.

[0360] Examples of non-polar resins include low-density polyethylene (LDPE), linear low-density polyethylene (LLDPE), metallocene-catalyzed linear low-density polyethylene (metallocene LLDPE), medium-density polyethylene (MDPE), high-density polyethylene (HDPE), and polypropylene (PP).

[0361] The composition for forming the intermediate layer and the non-silicone resin contained in the intermediate layer may be only one type or two or more types. When there are two or more types, their combination and ratio can be arbitrarily selected.

[0362] For example, the composition for forming the intermediate layer and the intermediate layer may contain one or more non-silicone resins as polar resins and not contain non-silicone resins as non-polar resins; it may contain one or more non-silicone resins as non-polar resins and not contain non-silicone resins as polar resins; or it may simultaneously contain one or more non-silicone resins as polar resins and one or more non-silicone resins as non-polar resins.

[0363] The composition for forming the intermediate layer and the intermediate layer preferably contain at least a non-silicone resin as a polar resin.

[0364] In the composition for forming the intermediate layer and the intermediate layer, the content of the non-silicone resin as the polar resin relative to the total content of the non-silicone resin is preferably 80% by mass or more, more preferably 90% by mass or more, and for example, it can be any range from 95% by mass or more, 97% by mass or more, and 99% by mass or more. By setting the ratio to the lower limit or above, the effects of using the polar resin can be obtained more significantly.

[0365] On the other hand, the ratio is less than 100% by mass.

[0366] That is, in the composition for forming the intermediate layer and the intermediate layer, the content of the non-silicone resin as a non-polar resin relative to the total content of the non-silicone resin is preferably 20% by mass or less, more preferably 10% by mass or less, for example, it can be any range of 5% by mass or less, 3% by mass or less and 1% by mass or less.

[0367] On the other hand, the ratio is 0% by mass or more.

[0368] From the perspective of the good operability of the composition for forming the intermediate layer, the composition for forming the intermediate layer preferably contains a solvent in addition to the non-silicone resin, and may also contain a component that is not a component of either the non-silicone resin or the solvent (sometimes referred to as "additive" in this specification).

[0369] The intermediate layer may contain only the non-silicone resin, or it may contain both the non-silicone resin and the additives.

[0370] The additive can be any of the resin components (sometimes referred to as "other resin components" in this specification) and non-resin components.

[0371] Other resin components include, for example, non-silicone resins and silicone resins with a weight-average molecular weight (Mw) greater than 100,000.

[0372] For non-silicone resins with a weight average molecular weight greater than 100,000, there are no special restrictions as long as this condition is met.

[0373] As will be described later, the intermediate layer containing the silicon-based resin facilitates the pickup of semiconductor chips with film-like adhesives.

[0374] The silicone resin is not particularly limited as long as it is a resin component having silicon atoms as constituent atoms. For example, the weight-average molecular weight of the silicone resin is not particularly limited.

[0375] Preferred silicone resins include, for example, resin components that exhibit a release effect on adhesive components, and more preferably, siloxane resins (also known as resin components having siloxane bonds (-Si-O-Si-), siloxane compounds).

[0376] Examples of such siloxane resins include polydialkylsiloxanes.

[0377] The polydialkylsiloxane preferably has 1 to 20 carbon atoms in its alkyl groups.

[0378] In the polydialkylsiloxane, the two alkyl groups bonded to one silicon atom can be the same or different from each other. When the two alkyl groups bonded to one silicon atom are different from each other, there is no particular limitation on the combination of these two alkyl groups.

[0379] Examples of polydialkylsiloxanes include polydimethylsiloxane.

[0380] The non-resin component can be any of the organic and inorganic compounds, without particular limitation.

[0381] The composition for forming the intermediate layer and the additives contained in the intermediate layer may be only one or more. When there are more than two additives, their combination and ratio can be arbitrarily selected.

[0382] For example, the composition for forming the intermediate layer and the intermediate layer may contain one or more resin components as the additive and not contain any non-resin components, or may contain one or more non-resin components as the additive and not contain any resin components, or may simultaneously contain one or more resin components and one or more non-resin components as the additive.

[0383] When the composition for forming the intermediate layer and the intermediate layer contain the additive, the ratio of the content of the non-silicone resin to the total mass of the intermediate layer (in other words, the ratio of the content of the non-silicone resin to the total content of all components except the solvent in the composition for forming the intermediate layer) is preferably 90 to 99.99% by mass, for example, it can be any range of 90 to 97.5% by mass, 90 to 95% by mass, and 90 to 92.5% by mass, or any range of 92.5 to 99.99% by mass, 95 to 99.99% by mass, and 97.5 to 99.99% by mass, or 92.5 to 97.5% by mass.

[0384] When the composition for forming the intermediate layer and the intermediate layer contain the additive, the ratio of the content of the additive to the total mass of the intermediate layer (in other words, the ratio of the content of the additive to the total content of all components except the solvent in the composition for forming the intermediate layer) is preferably 0.01 to 10% by mass, for example, it can be any range of 2.5 to 10% by mass, 5 to 10% by mass, and 7.5 to 10% by mass, or any range of 0.01 to 7.5% by mass, 0.01 to 5% by mass, and 0.01 to 2.5% by mass, or 2.5 to 7.5% by mass.

[0385] The solvent contained in the composition for forming the intermediate layer is not particularly limited, but preferred solvents include, for example, hydrocarbons such as toluene and xylene; alcohols such as methanol, ethanol, 2-propanol, isobutanol (2-methylpropane-1-ol), and 1-butanol; esters such as ethyl acetate; ketones such as acetone and methyl ethyl ketone; ethers such as tetrahydrofuran; and amides (compounds having amide bonds) such as dimethylformamide and N-methylpyrrolidone.

[0386] The composition for forming the intermediate layer may contain only one solvent or two or more solvents. When there are two or more solvents, their combination and ratio can be arbitrarily selected.

[0387] From the perspective of enabling more uniform mixing of the components contained in the composition for forming the intermediate layer, the solvent contained in the composition for forming the intermediate layer is preferably tetrahydrofuran or the like.

[0388] The content of solvent in the composition for forming the intermediate layer is not particularly limited; for example, it can be appropriately selected according to the types of components other than the solvent.

[0389] As will be described later, from the perspective of making it easier to pick up semiconductor chips with film-like adhesives, the preferred intermediate layer can be, for example, an intermediate layer containing ethylene vinyl acetate copolymer as the non-silicone resin and siloxane compound as the additive, wherein the content of the ethylene vinyl acetate copolymer (the non-silicone resin) in the intermediate layer is in the ratio of the total mass of the intermediate layer to any of the above-mentioned numerical ranges, and the content of the siloxane compound (the additive) in the intermediate layer is in the ratio of the total mass of the intermediate layer to any of the above-mentioned numerical ranges.

[0390] Examples of such intermediate layers include: an intermediate layer containing an ethylene vinyl acetate copolymer as the non-silicone resin and a siloxane compound as the additive, wherein the content of the ethylene vinyl acetate copolymer in the intermediate layer is 90 to 99.99% by mass relative to the total mass of the intermediate layer, and the content of the siloxane compound in the intermediate layer is 0.01 to 10% by mass relative to the total mass of the intermediate layer. However, this is only a preferred example of an intermediate layer.

[0391] As a more preferred intermediate layer, an example can be described as follows: an intermediate layer containing an ethylene vinyl acetate copolymer as the non-silicone resin and a siloxane compound as the additive, wherein the mass ratio of the structural units derived from vinyl acetate to the total mass of all structural units in the ethylene vinyl acetate copolymer (in other words, the content of structural units derived from vinyl acetate) is 10 to 40% by mass, and wherein the content of the ethylene vinyl acetate copolymer in the intermediate layer is 90 to 99.99% by mass relative to the total mass of the intermediate layer, and the content of the siloxane compound in the intermediate layer is 0.01 to 10% by mass relative to the total mass of the intermediate layer. However, this is only a more preferred example of an intermediate layer.

[0392] For wafers used in semiconductor device manufacturing, X-ray photoelectron spectroscopy (XPS, sometimes referred to as "XPS") is used to examine the film-like adhesive side of the intermediate layer (e.g., on...). Figure 1 When analyzing the first surface 13a) of the intermediate layer 13, the ratio of silicon concentration to the total concentration of carbon, oxygen, nitrogen and silicon (sometimes referred to simply as "silicon concentration ratio" in this specification) is preferably 1 to 20% in molar terms. As described below, by using a semiconductor device manufacturing wafer having such an intermediate layer, it is easier to pick up semiconductor chips with film-like binders.

[0393] The silicon concentration ratio can be calculated using the following formula:

[0394] [Silicon concentration measured by XPS analysis (atomic%)] / {[Carbon concentration measured by XPS analysis (atomic%)] + [Oxygen concentration measured by XPS analysis (atomic%)] + [Nitrogen concentration measured by XPS analysis (atomic%)] + [Silicon concentration measured by XPS analysis (atomic%)]} × 100

[0395] For XPS analysis, X-ray photoelectron spectroscopy (XPS) analyzers (e.g., the Quantra SXM manufactured by ULVAC, Inc.) can be used with an irradiation angle of 45° and an X-ray beam diameter of [missing information]. XPS analysis was performed on the surface of the film adhesive side of the intermediate layer under a 4.5W output condition.

[0396] Based on the point that the above-mentioned effect is more significant, the proportion of silicon concentration is based on the molar ratio of the element, for example, it can be any range of 4-20%, 8-20% and 12-20%, or any range of 1-16%, 1-12% and 1-8%, or any range of 4-16% and 8-12%.

[0397] When performing XPS analysis in the manner described above, elements other than carbon, oxygen, nitrogen, and silicon may sometimes be detected in the intermediate layer (the surface to be analyzed by XPS). However, even if these other elements are detected, their concentrations are usually trace. Therefore, when calculating the proportion of silicon concentration, the proportion of silicon concentration can be calculated with high accuracy simply by using the measured values ​​of the concentrations of carbon, oxygen, nitrogen, and silicon.

[0398] The intermediate layer can consist of one layer (single layer) or multiple layers (two or more layers). When it consists of multiple layers, these multiple layers can be the same as each other or different from each other. There are no particular restrictions on the combination of these multiple layers.

[0399] As explained above, the maximum width of the intermediate layer is preferably smaller than the maximum width of the adhesive layer and the maximum width of the substrate.

[0400] The maximum width of the intermediate layer can be appropriately selected considering the size of the semiconductor wafer. For example, the maximum width of the intermediate layer can be 150–160 mm, 200–210 mm, or 300–310 mm. These three ranges correspond to semiconductor wafers with a maximum width of 150 mm, 200 mm, or 300 mm in the direction parallel to the attachment surface of the semiconductor device manufacturing wafer. However, as explained above, after dicing the semiconductor wafer with the formation of the modified layer, when the film adhesive is cut by expanding the semiconductor device manufacturing wafer, as described later, the diced multiple semiconductor chips (semiconductor chip sets) are grouped together, and the semiconductor device manufacturing wafer is attached to these semiconductor chips.

[0401] In this specification, unless otherwise stated, "width of the intermediate layer" refers, for example, "width of the intermediate layer in the direction parallel to the first surface of the intermediate layer." For example, in the case of an intermediate layer with a circular planar shape, the maximum value of the width of the intermediate layer is the diameter of the circle of the planar shape.

[0402] This also applies to semiconductor wafers. That is, "the width of a semiconductor wafer" refers to...

[0403] "The width of the semiconductor wafer in a direction parallel to the attachment surface of the semiconductor wafer to the wafer used for manufacturing semiconductor devices." For example, in the case of a semiconductor wafer with a planar circular shape, the maximum value of the width of the semiconductor wafer is the diameter of the circle with the planar shape.

[0404] The maximum width of the intermediate layer, which is 150-160 mm, refers to the maximum width of the semiconductor wafer, which is equal to or greater than 150 mm within a range not exceeding 10 mm.

[0405] Similarly, the maximum width of the intermediate layer of 200-210 mm refers to the maximum width of the semiconductor wafer that is equal to or greater than 200 mm within a range not exceeding 10 mm.

[0406] Similarly, the maximum width of the intermediate layer of 300-310 mm refers to the maximum width of the semiconductor wafer that is equal to or greater than 300 mm within a range not exceeding 10 mm.

[0407] That is, in this embodiment, regardless of whether the maximum width of the semiconductor wafer is 150mm, 200mm, or 300mm, the difference between the maximum width of the intermediate layer and the maximum width of the semiconductor wafer can be, for example, 0 to 10mm.

[0408] The thickness of the intermediate layer can be appropriately selected according to the purpose, preferably 5–150 μm, more preferably 5–120 μm, for example, it can be any range of 10–90 μm and 10–60 μm, or any range of 30–120 μm and 60–120 μm. By making the thickness of the intermediate layer above the lower limit value, the structure of the intermediate layer is more stable. By making the thickness of the intermediate layer below the upper limit value, the film adhesive can be cut more easily when performing blade cutting and when expanding the wafer for semiconductor device manufacturing.

[0409] Here, "thickness of intermediate layer" refers to the overall thickness of intermediate layer. For example, the thickness of intermediate layer composed of multiple layers refers to the total thickness of all layers that make up the intermediate layer.

[0410] When the intermediate layer contains the aforementioned silicon-based resin, especially when the compatibility between the silicon-based resin and the non-silicone resin, which is a major component, is low, the silicon-based resin in the intermediate layer tends to be unevenly distributed on both sides of the intermediate layer (the first side and the side opposite to the first side) and in the surrounding area in a semiconductor device manufacturing wafer. Moreover, the stronger this tendency, the easier it is for the film adhesive adjacent to (in direct contact with) the intermediate layer to be peeled off from the intermediate layer, and the easier it is to pick up the semiconductor chip with the film adhesive in the manner described later.

[0411] For example, when comparing intermediate layers that differ only in thickness but are identical in composition, area of ​​both sides, etc., except for thickness, the proportion (mass %) of silicone resin content relative to the total mass of the intermediate layers is the same in all these intermediate layers. However, the thicker intermediate layers contain more silicone resin (parts by mass) than the thinner intermediate layers. Therefore, when silicone resin tends to be unevenly distributed in the intermediate layers as described above, the thicker intermediate layers contain more silicone resin unevenly distributed on both sides (the first side and the side opposite to the first side) and in their vicinity compared to the thinner intermediate layers. Therefore, even without changing the proportions, the pick-up suitability of semiconductor chips with film-like adhesives can be adjusted by adjusting the thickness of the intermediate layers in the semiconductor device manufacturing wafer. For example, by increasing the thickness of the intermediate layers in the semiconductor device manufacturing wafer, semiconductor chips with film-like adhesives can be picked up more easily.

[0412] ○ Film adhesive

[0413] The film-like adhesive has curable properties, preferably thermosetting properties, and even more preferably pressure-sensitive adhesive properties. A film-like adhesive possessing both thermosetting and pressure-sensitive adhesive properties can be applied to various substrates by gentle pressing in its uncured state. Furthermore, the film-like adhesive can also be an adhesive that can be softened by heat and applied to various substrates. Upon curing, the film-like adhesive ultimately forms a highly impact-resistant cured product that maintains sufficient adhesive properties even under harsh high-temperature and high-humidity conditions.

[0414] When viewing a semiconductor device manufacturing wafer from above, the area of ​​the film adhesive (i.e., the area of ​​the first side) is preferably set to be smaller than the area of ​​the substrate (i.e., the area of ​​the first side) and the area of ​​the adhesive layer (i.e., the area of ​​the first side), in a manner close to the area of ​​the semiconductor wafer before dicing. In this semiconductor device manufacturing wafer, a portion of the first side of the adhesive layer contains areas that are not in contact with the intermediate layer and the film adhesive (i.e., the non-stacked areas). This makes the expansion of the semiconductor device manufacturing wafer easier, and the force applied to the film adhesive during expansion is not dispersed, thus making it easier to cut the film adhesive.

[0415] Film-like adhesives can be formed using adhesive compositions containing their constituent materials. For example, a film-like adhesive can be formed at a target site by applying an adhesive composition to the surface of the object to which the film-like adhesive is to be formed and allowing it to dry as needed.

[0416] In film adhesives, the total content of one or more of the components described below in the film adhesive is no more than 100% by mass relative to the total mass of the film adhesive.

[0417] Similarly, in the adhesive composition, the total content of one or more of the ingredients described below in the adhesive composition is not more than 100 by mass relative to the total mass of the adhesive composition.

[0418] The adhesive composition can be applied using the same method as the adhesive composition described above.

[0419] There are no particular limitations on the drying conditions of the adhesive composition. When the adhesive composition contains the solvent described later, it is preferable to perform heat drying, for example, at 70 to 130°C for 10 seconds to 5 minutes.

[0420] Film adhesives can consist of one layer (single layer) or multiple layers (two or more layers). When multiple layers are used, these multiple layers can be the same as each other or different from each other, and there are no particular restrictions on the combination of these multiple layers.

[0421] As described above, the maximum width of the film adhesive is preferably less than the maximum width of the adhesive layer and the maximum width of the substrate.

[0422] The maximum width of the film adhesive relative to the size of the semiconductor wafer can be the same as the maximum width of the intermediate layer described above.

[0423] That is, the maximum width of the film adhesive can be appropriately selected considering the size of the semiconductor wafer. For example, the maximum width of the film adhesive can be 150–160 mm, 200–210 mm, or 300–310 mm. These three ranges correspond to semiconductor wafers with a maximum width of 150 mm, 200 mm, or 300 mm in the direction parallel to the bonding surface of the semiconductor device manufacturing wafer.

[0424] In this specification, unless otherwise stated, "width of the film adhesive" refers to, for example,

[0425] "The width of the film adhesive in the direction parallel to the first surface of the film adhesive." For example, in the case of a film adhesive with a circular planar shape, the maximum value of the width of the film adhesive described above is the diameter of the circle with the planar shape.

[0426] Furthermore, unless otherwise stated, “width of film adhesive” refers to “width of film adhesive before (uncut)”, and not the width of film adhesive after cutting during the manufacturing process of a semiconductor chip with film adhesive as described later.

[0427] The maximum width of the 150-160 mm film adhesive refers to the maximum width of the semiconductor wafer that is equal to or greater than 150 mm within a range not exceeding 10 mm.

[0428] Similarly, the maximum width of the film adhesive, which is 200 to 210 mm, refers to the maximum width of the semiconductor wafer, which is equal to or greater than 200 mm within a range not exceeding 10 mm.

[0429] Similarly, the maximum width of the film adhesive, 300–310 mm, refers to the maximum width of the semiconductor wafer, which is equal to or greater than 300 mm within a range not exceeding 10 mm.

[0430] That is, in this embodiment, regardless of whether the maximum width of the semiconductor wafer is 150mm, 200mm, or 300mm, the difference between the maximum width of the film adhesive and the maximum width of the semiconductor wafer can be, for example, 0 to 10mm.

[0431] In this embodiment, the maximum width of the intermediate layer and the maximum width of the film adhesive can both be any of the values ​​within the range described above.

[0432] That is, as an example of a semiconductor device manufacturing wafer according to this embodiment, a semiconductor device manufacturing wafer in which the maximum width of the intermediate layer and the maximum width of the film adhesive are both 150-160 mm, 200-210 mm, or 300-310 mm can be listed.

[0433] The thickness of the film adhesive is not particularly limited, but is preferably 1 to 30 μm, more preferably 2 to 20 μm, and particularly preferably 3 to 10 μm. By making the thickness of the film adhesive above or below the lower limit, a higher adhesion to the substrate (semiconductor chip) can be obtained. By making the thickness of the film adhesive below or below the upper limit, the film adhesive can be cut more easily during blade cutting and the expansion of the wafer for semiconductor device manufacturing.

[0434] The “thickness of the film adhesive” refers to the overall thickness of the film adhesive. For example, the thickness of a film adhesive consisting of multiple layers refers to the total thickness of all the layers that make up the film adhesive.

[0435] Next, the adhesive composition will be described.

[0436] <<Adhesive Compositions>>

[0437] Preferred adhesive compositions include, for example, adhesive compositions containing a polymer component (a) and a thermosetting component (b). The components will be described below.

[0438] Furthermore, the adhesive composition shown below is only a preferred example, and the adhesive composition of this embodiment is not limited to the adhesive composition shown below.

[0439] [Polymer component (a)]

[0440] Polymer component (a) is a component formed by the polymerization reaction of a polymeric compound. It is a polymeric compound that imparts film-forming properties, flexibility, etc., to the film-forming adhesive and improves the adhesion (in other words, the bonding properties) to objects such as semiconductor chips. Polymer component (a) is thermoplastic but not thermosetting.

[0441] The polymer components (a) contained in the adhesive composition and the film adhesive may be only one or more, and when there are more than two, their combination and ratio can be arbitrarily selected.

[0442] Examples of polymer components (a) include acrylic resins, urethane resins, phenoxy resins, silicone resins, saturated polyester resins, etc.

[0443] The polymer component (a) is preferably an acrylic resin.

[0444] In the adhesive composition, the ratio of the content of polymer component (a) to the total content of all components except the solvent (i.e., the ratio of the content of polymer component (a) in the film adhesive to the total mass of the film adhesive) is preferably 20 to 75% by mass, more preferably 30 to 65% by mass.

[0445] [Thermosetting component (b)]

[0446] Thermosetting component (b) is a thermosetting component used to heat-cure film adhesives.

[0447] The thermosetting component (b) contained in the adhesive composition and film adhesive may be only one type or two or more types. When there are two or more types, their combination and ratio can be arbitrarily selected.

[0448] Examples of thermosetting components (b) include epoxy thermosetting resins, polyimide resins, and unsaturated polyester resins.

[0449] Thermosetting component (b) is preferably an epoxy thermosetting resin.

[0450] ○ Epoxy thermosetting resins

[0451] Epoxy thermosetting resins are formed from epoxy resin (b1) and thermosetting agent (b2). The adhesive composition and film adhesive may contain only one type of epoxy thermosetting resin or two or more types. When there are two or more types, their combination and ratio can be arbitrarily selected.

[0452] ·Epoxy resin (b1)

[0453] As for epoxy resin (b1), well-known epoxy resins can be listed, such as multifunctional epoxy resins, biphenyl compounds, bisphenol A diglycidyl ether and its hydrides, o-cresol phenolic varnish (novolak) epoxy resin, dicyclopentadiene type epoxy resin, biphenyl type epoxy resin, bisphenol A type epoxy resin, bisphenol F type epoxy resin, phenylene skeleton type epoxy resin, and other epoxy compounds with more than one function.

[0454] As the epoxy resin (b1), epoxy resins with unsaturated hydrocarbon groups can also be used. Epoxy resins with unsaturated hydrocarbon groups have better compatibility with acrylic resins than epoxy resins without unsaturated hydrocarbon groups. Therefore, by using epoxy resins with unsaturated hydrocarbon groups, the reliability of encapsulation obtained using film adhesives is increased.

[0455] The epoxy resin (b1) contained in the adhesive composition and film adhesive may be only one type or two or more types. When there are two or more types, their combination and ratio can be arbitrarily selected.

[0456] • Thermosetting agent (b2)

[0457] The thermosetting agent (b2) functions as a curing agent for the epoxy resin (b1).

[0458] As a thermosetting agent (b2), examples include compounds having two or more functional groups in one molecule that can react with epoxy groups. Examples of such functional groups include phenolic hydroxyl groups, alcoholic hydroxyl groups, amino groups, carboxyl groups, and groups formed by anhydride modification of acid groups; phenolic hydroxyl groups, amino groups, or groups formed by anhydride modification of acid groups are preferred, and phenolic hydroxyl groups or amino groups are more preferred.

[0459] Phenolic curing agents with phenolic hydroxyl groups, such as polyfunctional phenolic resins, biphenyl, phenolic varnish-type phenolic resins, dicyclopentadiene-type phenolic resins, and aralkyl-type phenolic resins, are examples of thermosetting agents (b2).

[0460] As a thermosetting agent (b2), amine curing agents containing amino groups can be listed as examples such as dicyandiamide (DICY).

[0461] Thermosetting agent (b2) may have unsaturated hydrocarbon groups.

[0462] The thermosetting agent (b2) contained in the adhesive composition and film adhesive may be only one type or two or more types. When there are two or more types, their combination and ratio can be arbitrarily selected.

[0463] In the adhesive composition and film adhesive, the content of thermosetting agent (b2) is preferably 0.1 to 500 parts by weight, more preferably 1 to 200 parts by weight, relative to 100 parts by weight of epoxy resin (b1), for example, any range from 1 to 100 parts by weight, 1 to 50 parts by weight, and 1 to 25 parts by weight. By setting the content of thermosetting agent (b2) to the lower limit or above, the curing of the film adhesive is easier. By setting the content of thermosetting agent (b2) to the upper limit or below, the moisture absorption rate of the film adhesive is reduced, and the reliability of the encapsulation obtained using the film adhesive is further increased.

[0464] In the adhesive composition and film adhesive, relative to 100 parts by weight of polymer component (a), the content of thermosetting component (b) (e.g., the total content of epoxy resin (b1) and thermosetting agent (b2)) is preferably 5 to 100 parts by weight, more preferably 5 to 75 parts by weight, particularly preferably 5 to 50 parts by weight, and for example, any range from 5 to 35 parts by weight and 5 to 20 parts by weight. By keeping the content of thermosetting component (b) within the above range, the peel force between the intermediate layer and the film adhesive is more stable.

[0465] In order to improve the various physical properties of the film adhesive, in addition to containing the polymer component (a) and the thermosetting component (b), the adhesive composition and the film adhesive may further contain other components that are not polymer components (a) and thermosetting components (b) as needed.

[0466] Preferred components among the other ingredients contained in the adhesive composition and film adhesive include, for example, curing accelerators (c), fillers (d), coupling agents (e), crosslinking agents (f), energy-curable resins (g), photopolymerization initiators (h), and general additives (i).

[0467] [Curing accelerator (c)]

[0468] The curing accelerator (c) is a component used to adjust the curing speed of the adhesive composition.

[0469] Preferred curing accelerators (c) include, for example, tertiary amines such as triethylenediamine, benzyldimethylamine, triethanolamine, dimethylaminoethanol, and tris(dimethylaminomethyl)phenol; imidazoles (imidazoles in which one or more hydrogen atoms are replaced by groups other than hydrogen atoms) such as 2-methylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole, 2-phenyl-4,5-dihydroxymethylimidazole, and 2-phenyl-4-methyl-5-hydroxymethylimidazole; organophosphines (phosphines in which one or more hydrogen atoms are replaced by organic groups) such as tributylphosphine, diphenylphosphine, and triphenylphosphine; and tetraphenylboron salts such as tetraphenyl phosphonium tetraphenyl borate and triphenylphosphine tetraphenylborate.

[0470] The curing accelerator (c) contained in the adhesive composition and the film adhesive may be only one type or two or more types. When there are two or more types, their combination and ratio can be arbitrarily selected.

[0471] When using curing accelerator (c), the content of curing accelerator (c) in the adhesive composition and film adhesive is preferably 0.01 to 10 parts by mass relative to 100 parts by mass of the thermosetting component (b), more preferably 0.1 to 5 parts by mass. By setting the content of curing accelerator (c) to the lower limit or above, the effects of using curing accelerator (c) can be obtained more significantly. By setting the content of curing accelerator (c) to the upper limit or below, for example, the effect of suppressing the highly polar curing accelerator (c) from migrating to the bonding interface with the adherend under high temperature and high humidity conditions is improved, and the reliability of the encapsulation obtained by using the film adhesive is further increased.

[0472] [Fill material (d)]

[0473] By including filler material (d) in the film adhesive, the cutability of the extended film adhesive is further improved. Furthermore, by including filler material (d) in the film adhesive, the adjustment of the coefficient of thermal expansion of the film adhesive becomes easier, and by optimizing this coefficient of thermal expansion for the object to which the film adhesive is applied, the reliability of the encapsulation obtained using the film adhesive is further improved. In addition, by including filler material (d) in the film adhesive, the moisture absorption rate of the cured film adhesive can be reduced, or its heat dissipation can be improved.

[0474] The filler material (d) can be either organic or inorganic, preferably inorganic.

[0475] Preferred inorganic filler materials include, for example, powders of silicon dioxide, alumina, talc, calcium carbonate, titanium dioxide, red iron oxide, silicon carbide, boron nitride, etc.; beads obtained by spherizing these inorganic filler materials; surface modifiers of these inorganic filler materials; single crystal fibers of these inorganic filler materials; glass fibers, etc.

[0476] The inorganic filler material is preferably silicon dioxide or aluminum oxide.

[0477] The filler material (d) contained in the adhesive composition and the film adhesive may be only one type or two or more types. When there are two or more types, their combination and ratio can be arbitrarily selected.

[0478] When using filler material (d), the ratio of the content of filler material (d) in the adhesive composition to the total content of all components except the solvent (i.e., the ratio of the content of filler material (d) in the film adhesive to the total mass of the film adhesive) is preferably 5 to 80% by mass, more preferably 10 to 70% by mass, and particularly preferably 20 to 60% by mass. By keeping the ratio within the above range, the effects of using the filler material (d) can be obtained more significantly.

[0479] [Coupled agent(e)]

[0480] By incorporating a coupling agent (e) into the film adhesive, its adhesion and bonding strength to the adhered objects are improved. Furthermore, by including a coupling agent (e) in the film adhesive, the water resistance of the cured film adhesive is improved without compromising its heat resistance. The coupling agent (e) has functional groups that can react with inorganic or organic compounds.

[0481] The coupling agent (e) is preferably a compound having functional groups that can react with functional groups present in polymer component (a), thermosetting component (b), etc., and more preferably a silane coupling agent.

[0482] The coupling agent (e) contained in the adhesive composition and the film adhesive may be only one type or two or more types. When there are two or more types, their combination and ratio can be arbitrarily selected.

[0483] When using coupling agent (e), in the adhesive composition and film adhesive, the content of coupling agent (e) is preferably 0.03 to 20 parts by mass, more preferably 0.05 to 10 parts by mass, and particularly preferably 0.1 to 5 parts by mass, relative to 100 parts by mass of the total content of polymer component (a) and thermosetting component (b). By setting the content of coupling agent (e) to the lower limit or above, the effects of using coupling agent (e), such as improving the dispersibility of filler material (d) in the resin or improving the adhesion between the film adhesive and the adherend, can be obtained more significantly. By setting the content of coupling agent (e) to the upper limit or below, the generation of outgassing can be further suppressed.

[0484] [Crosslinking agent (f)]

[0485] When the aforementioned acrylic resin or other substances having functional groups such as vinyl, (meth)acryloyl, amino, hydroxyl, carboxyl, and isocyanate groups that can bond with other compounds are used as polymer component (a), the adhesive composition and film adhesive may also contain a crosslinking agent (f). The crosslinking agent (f) is a component used to bond and crosslink the functional groups in polymer component (a) with other compounds. By crosslinking in this manner, the initial adhesive force and cohesive force of the film adhesive can be adjusted.

[0486] Examples of crosslinking agents (f) include organic polyisocyanate compounds, organic polyimide compounds, metal chelate crosslinking agents (crosslinking agents with metal chelate structures), and aziridine crosslinking agents (crosslinking agents with aziridine groups).

[0487] When an organic polyisocyanate compound is used as a crosslinking agent (f), a hydroxyl-containing polymer is preferably used as the polymer component (a). When the crosslinking agent (f) has isocyanate groups and the polymer component (a) has hydroxyl groups, the crosslinked structure can be easily introduced into the film adhesive through the reaction of the crosslinking agent (f) and the polymer component (a).

[0488] The crosslinking agent (f) contained in the adhesive composition and the film adhesive may be only one type or two or more types. When there are two or more types, their combination and ratio can be arbitrarily selected.

[0489] When using a crosslinking agent (f), in the adhesive composition, the content of the crosslinking agent (f) is preferably 0.01 to 20 parts by mass relative to 100 parts by mass of the polymer component (a), more preferably 0.1 to 10 parts by mass, and particularly preferably 0.3 to 5 parts by mass. By setting the content of the crosslinking agent (f) to the lower limit or above, the effects of using the crosslinking agent (f) can be obtained more significantly. By setting the content of the crosslinking agent (f) to the upper limit or below, the excessive use of the crosslinking agent (f) can be suppressed.

[0490] [Energy-cured resin (g)]

[0491] By including an energy-curable resin (g) in the adhesive composition and the film adhesive, the properties of the film adhesive can be altered by irradiation with energy rays.

[0492] Energy-curable resin (g) is a resin obtained from an energy-curable compound.

[0493] Examples of energy-curable compounds include those having at least one polymerizable double bond within the molecule, with acrylate compounds having a (meth)acryloyl group being preferred.

[0494] The adhesive composition may contain only one type of energy-curable resin (g), or two or more types. When there are two or more types, their combination and ratio can be arbitrarily selected.

[0495] When using an energy-curable resin (g), the content of the energy-curable resin (g) in the adhesive composition relative to the total mass of the adhesive composition is preferably 1 to 95% by mass, more preferably 5 to 90% by mass, and particularly preferably 10 to 85% by mass.

[0496] [Photopolymerization initiator (h)]

[0497] When the adhesive composition and film adhesive contain an energy-curable resin (g), a photopolymerization initiator (h) may be included in order to efficiently promote the polymerization reaction of the energy-curable resin (g).

[0498] Examples of photopolymerization initiators (h) in adhesive compositions include, for example, benzoin compounds such as benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzoin isobutyl ether, benzoin benzoic acid, methyl benzoate, and benzoin dimethyl ketal; acetophenone compounds such as 2-hydroxy-2-methyl-1-phenyl-propane-1-one and 2,2-dimethoxy-1,2-diphenylethane-1-one; and phenylbis(2,4,6-trimethylbenzoyl)phosphine oxide and 2,4,6-trimethylbenzoyl diphenylphosphine oxide. Acylphosphine oxides; sulfides such as benzylphenyl sulfide and tetramethylthiuram monosulfide; α-keto alcohols such as 1-hydroxycyclohexylphenyl ketone; azo compounds such as azobisisobutyronitrile; diacetic compounds such as diaceticotrope; thioxanthone compounds such as thioxanthone; peroxides; diketone compounds such as butanedione; benzoylayl; dibenzoylayl; benzophenone; 2,4-diethylthioxanthone; 1,2-diphenylmethane; 2-hydroxy-2-methyl-1-[4-(1-methylvinyl)phenyl]propanone; quinone compounds such as 1-chloroanthraquinone and 2-chloroanthraquinone, etc.

[0499] In addition, photosensitizers such as amines can also be listed as photopolymerization initiators (h).

[0500] The photopolymerization initiator (h) contained in the adhesive composition may be only one type or two or more types. When there are two or more types, their combination and ratio can be arbitrarily selected.

[0501] When using a photopolymerization initiator (h), the content of the photopolymerization initiator (h) in the adhesive composition is preferably 0.1 to 20 parts by mass relative to 100 parts by mass of the energy-curable resin (g), more preferably 1 to 10 parts by mass, and particularly preferably 2 to 5 parts by mass.

[0502] [General Additives (i)]

[0503] General additives (i) can be known additives, which can be selected arbitrarily according to the purpose without particular limitation, but preferred additives include, for example, plasticizers, antistatic agents, antioxidants, colorants (dyes, pigments), gettering agents, etc.

[0504] The adhesive composition and the film adhesive may contain only one or more general additives (i), and when there are more than two, their combination and ratio can be arbitrarily selected.

[0505] There are no particular limitations on the content of adhesive compositions and film adhesives; appropriate selection can be made according to the purpose.

[0506] [solvent]

[0507] The adhesive composition preferably further contains a solvent. The operability of the adhesive composition becomes better with the addition of a solvent.

[0508] The solvent is not particularly limited, but preferred solvents include, for example, hydrocarbons such as toluene and xylene; alcohols such as methanol, ethanol, 2-propanol, isobutanol (2-methylpropane-1-ol), and 1-butanol; esters such as ethyl acetate; ketones such as acetone and methyl ethyl ketone; ethers such as tetrahydrofuran; and amides (compounds with amide bonds) such as dimethylformamide and N-methylpyrrolidone.

[0509] The adhesive composition may contain only one solvent or two or more solvents. When there are two or more solvents, their combination and ratio can be arbitrarily selected.

[0510] From the perspective of enabling more uniform mixing of the components contained in the adhesive composition, the solvent contained in the adhesive composition is preferably methyl ethyl ketone or the like.

[0511] There is no particular limitation on the solvent content of the adhesive composition; for example, it can be appropriately selected based on the types of components other than the solvent.

[0512] <<Preparation Method of Adhesive Composition>>

[0513] An adhesive composition can be obtained by incorporating the components used to form the composition.

[0514] For example, apart from the different types of admixtures, adhesive compositions can be prepared using the same method as the adhesive compositions described above.

[0515] ◇Manufacturing method for semiconductor device manufacturing wafers

[0516] The semiconductor device wafer can be manufactured by stacking the layers in a corresponding positional relationship. The method for forming each layer is the same as described above.

[0517] For example, the semiconductor device manufacturing wafer can be manufactured by pre-preparing a substrate, an adhesive layer, an intermediate layer and a film adhesive, and then bonding and stacking them in the order of substrate, adhesive layer, intermediate layer and film adhesive.

[0518] However, this is just one example of the manufacturing method for semiconductor device wafers.

[0519] The semiconductor device manufacturing wafer can also be manufactured by pre-fabricating two or more intermediate laminates, which are composed of multiple layers stacked together, to form the semiconductor device manufacturing wafer, and then bonding these intermediate laminates together. The composition of the intermediate laminates can be chosen arbitrarily as appropriate. For example, a first intermediate laminate (equivalent to the support sheet) having a composition of a substrate and an adhesive layer stacked together, and a second intermediate laminate having a composition of an intermediate layer and a film-like adhesive layer stacked together can be pre-fabricated, and the adhesive layer in the first intermediate laminate can be bonded to the intermediate layer in the second intermediate laminate, thereby manufacturing the semiconductor device manufacturing wafer.

[0520] However, this is just one example of the manufacturing method for semiconductor device wafers.

[0521] For example, in manufacturing such as Figure 1 When manufacturing a semiconductor device wafer where the area of ​​the first side of the intermediate layer and the area of ​​the first side of the film adhesive are both smaller than the areas of the first side of the adhesive layer and the first side of the substrate, a step of processing the intermediate layer and the film adhesive to the target size can be added at any stage of the above-described manufacturing method. For example, in the manufacturing method using the second intermediate layer stack, a semiconductor device wafer can be manufactured by adding a step of processing the intermediate layer and the film adhesive in the second intermediate layer stack to the target size.

[0522] When manufacturing a semiconductor device wafer in a state where a release film is attached to a film-like adhesive, for example, the film-like adhesive can be formed on the release film and maintained in this state, and the remaining layers can be laminated to manufacture the semiconductor device wafer; alternatively, after all the substrate, adhesive layer, intermediate layer, and film-like adhesive have been laminated, the release film can be laminated on the film-like adhesive to manufacture the semiconductor device wafer. The release film can be removed at a necessary stage before using the semiconductor device wafer.

[0523] A semiconductor device manufacturing wafer having other layers that are not among the substrate, adhesive layer, intermediate layer, film adhesive and release film can be manufactured by adding the other layers at an appropriate time and stacking them in the above manufacturing method.

[0524] ◇Method for using semiconductor device manufacturing wafers (method for manufacturing semiconductor chips with film adhesive)

[0525] The semiconductor device manufacturing wafer can be used in the manufacturing process of semiconductor devices, specifically in the manufacture of semiconductor chips with film-like adhesives.

[0526] Hereinafter, the method of using the semiconductor device manufacturing wafer (method of manufacturing a semiconductor chip with film adhesive) will be described in detail with reference to the accompanying drawings.

[0527] (First Implementation Plan)

[0528] Figure 3A , Figure 3B , Figure 3C This is a schematic cross-sectional view illustrating an example of a method of using a semiconductor device manufacturing wafer, showing the wafer being attached to a semiconductor wafer for use. In this method, the semiconductor device manufacturing wafer is used as a die-cutting fixture. Here, [the following is an example of a method using a semiconductor device manufacturing wafer as a die-cutting fixture]. Figure 1 Taking the semiconductor device manufacturing chip 101 shown as an example, its usage will be explained.

[0529] First, such as Figure 3A As shown, while heating the semiconductor device manufacturing wafer 101 which is in a state where the release film 15 has been removed, the film adhesive 14 therein is attached to the back side 9b' of the semiconductor wafer 9'.

[0530] The symbol 9a' represents the circuit formation surface of semiconductor wafer 9'.

[0531] There is no particular limitation on the heating temperature when attaching the semiconductor device manufacturing wafer 101, but from the point of view to further improve the heating and attachment stability of the semiconductor device manufacturing wafer 101, it is preferred to be 40 to 70°C.

[0532] The width W of the intermediate layer 13 in the semiconductor device manufacturing wafer 101 13 The maximum value and the width W of the film adhesive 14 14 The maximum values ​​are all related to the width W of the 9' of the semiconductor wafer. 9’ The maximum values ​​are exactly the same, or although they are different, the error is slight and they are almost identical.

[0533] Next, a blade is inserted (blade cutting) into the laminate of the semiconductor device manufacturing wafer 101 and the semiconductor wafer 9' obtained above from the circuit forming surface 9a' side of the semiconductor wafer 9', thereby dividing the semiconductor wafer 9' and cutting the film adhesive 14 at the same time.

[0534] Blade cutting can be performed using known methods. For example, after fixing the area near the periphery of the unlaminated intermediate layer 13 and film adhesive 14 in the first surface 12a of the adhesive layer 12 in the semiconductor device manufacturing wafer 101 to a jig such as an annular frame (not shown), a blade can be used to cleave the semiconductor wafer 9' and cut the film adhesive 14.

[0535] like Figure 3BAs shown, through this process, a plurality of semiconductor chips 914 with film-like adhesive, each having a semiconductor chip 9 and a cut film-like adhesive 140 disposed on its back side 9b, can be obtained. These semiconductor chips 914 with film-like adhesive are arranged in a neat manner and fixed on the intermediate layer 13 in the laminate 10, forming a semiconductor chip group 910 with film-like adhesive.

[0536] The back surface 9b of semiconductor chip 9 corresponds to the back surface 9b' of semiconductor wafer 9'. Furthermore, Figure 3A , Figure 3B , Figure 3C In the figure, reference numeral 9a indicates the circuit forming surface of semiconductor chip 9, which corresponds to the circuit forming surface 9a' of semiconductor wafer 9'.

[0537] When performing blade cutting, it is preferable to cut the entire area of ​​the semiconductor wafer 9' in the thickness direction to divide it, while cutting the blade from the first surface 14a of the film adhesive 14 to the middle area of ​​the intermediate layer 13 of the semiconductor device manufacturing wafer 101, thereby cutting the film adhesive 14 in the entire area in its thickness direction without cutting into the adhesive layer 12.

[0538] That is, when cutting with a blade, it is preferable to cut the blade from the circuit forming surface 9a' of the semiconductor wafer 9' at least to the first surface 13a of the intermediate layer 13 along the stacking direction of the stack of the semiconductor device manufacturing wafer 101 and the semiconductor wafer 9', and not to the surface of the intermediate layer 13 opposite to the first surface 13a (i.e., the contact surface with the adhesive layer 12).

[0539] In this process, the blade can be easily prevented from reaching the substrate 11 by the above method, thereby suppressing the generation of cutting chips from the substrate 11. Furthermore, by making the main component of the intermediate layer 13 cut by the blade a non-silicone resin with a weight average molecular weight of 100,000 or less, and especially by making the weight average molecular weight of 100,000 or less, the generation of cutting chips from the intermediate layer 13 can also be suppressed.

[0540] The cutting conditions can be adjusted appropriately according to the purpose, and there are no particular limitations. Generally, the preferred blade rotation speed is 15,000 to 50,000 rpm, and the preferred blade movement speed is 5 to 75 mm / s.

[0541] like Figure 3C As shown, after blade cutting, the semiconductor chip 914 with film-like adhesive is pulled away from the intermediate layer 13 in the laminate 10 to pick it up. Here, it is shown that the semiconductor chip 914 with film-like adhesive is pulled away in the direction of arrow P using a pulling tool 7 such as a vacuum collet. In addition, the cross-section of the pulling tool 7 is not shown here.

[0542] The semiconductor chip 914 with a film-like adhesive can be picked up using known methods.

[0543] As a method for picking up the semiconductor chip 914 with a film-like adhesive, for example, it can be a method of adsorbing and lifting the surface of the semiconductor chip 914 using a pull-off tool 7.

[0544] Alternatively, a method can be used whereby the back side 11b of the substrate is adsorbed using the adsorption stage 40, and the entire area of ​​the semiconductor device manufacturing wafer with the interlayer and film adhesive is pushed upward from the substrate side using the adsorption stage and the pushing member, while the surface of the semiconductor chip 914 is adsorbed and lifted using the pull-away tool 7.

[0545] When the adsorption stage 40 is used for pickup in the manner described above, by making the maximum cross-sectional height of the back surface 11b of the substrate 11 below 2000 nm, the dissipation of adsorption between the back surface 11b of the substrate 11 and the adsorption stage 40 can be suppressed, thereby improving the pickup suitability.

[0546] Furthermore, by making the surface roughness of the back surface 11b of the substrate 11 less than 200 nm, the dissipation of adsorption between the back surface 11b of the substrate 11 and the adsorption stage 40 can be suppressed, thereby improving the pick-up suitability.

[0547] When the silicon concentration in the first surface 13a of the intermediate layer 13 is 1 to 20%, the semiconductor chip 914 with film adhesive can be picked up more easily.

[0548] When the intermediate layer 13 contains, for example, an ethylene vinyl acetate copolymer as the non-silicone resin and a siloxane compound as the additive, and the content of the ethylene vinyl acetate copolymer in the intermediate layer is 90 to 99.99% by mass relative to the total mass of the intermediate layer, and the content of the siloxane compound in the intermediate layer is 0.01 to 10% by mass relative to the total mass of the intermediate layer, the semiconductor chip 914 with the film adhesive can be picked up more easily.

[0549] As a preferred embodiment of the method for manufacturing the semiconductor chip with the film-like adhesive described above, examples include:

[0550] A method for manufacturing a semiconductor chip with a film-like adhesive, comprising a semiconductor chip and a film-like adhesive disposed on the back side of the semiconductor chip, wherein the manufacturing method,

[0551] The semiconductor device manufacturing wafer includes the substrate, adhesive layer, intermediate layer, and film adhesive.

[0552] The manufacturing method includes: a step of heating the semiconductor device manufacturing wafer while attaching the film-like adhesive thereto to the back side of the semiconductor wafer; a step of cutting the semiconductor wafer with the film-like adhesive attached from its circuit forming surface side into its entire thickness direction to fabricate the semiconductor chip, and simultaneously cutting the semiconductor device manufacturing wafer from its film-like adhesive side into the middle region of the intermediate layer in its thickness direction, cutting the film-like adhesive without cutting into the adhesive layer, thereby obtaining a semiconductor chip group with film-like adhesive in which a plurality of semiconductor chips with film-like adhesive are neatly arranged on the intermediate layer; and a step of pulling the semiconductor chips with film-like adhesive from the intermediate layer to pick them up (in this specification, it is sometimes referred to as "manufacturing method 1").

[0553] After obtaining the semiconductor chip assembly with the film-like adhesive, before picking up the semiconductor chip with the film-like adhesive, the laminate can be extended in a direction parallel to the surface (first surface) of the intermediate layer side of the adhesive layer, and this state can be maintained while the periphery of the semiconductor chip without the film-like adhesive (semiconductor chip assembly with film-like adhesive) in the laminate is heated.

[0554] This allows the peripheral portion to contract while ensuring that the distance between adjacent semiconductor chips in the laminate, i.e., the slit width, is sufficiently wide and maintains this slit width with high uniformity. Furthermore, it makes it easier to pick up semiconductor chips with film-like adhesive.

[0555] (Second Implementation Plan)

[0556] Figure 4A , Figure 4B , Figure 4C This is a cross-sectional view illustrating an example of a method for manufacturing a semiconductor chip intended for use as a wafer in semiconductor device manufacturing, showing the manufacture of a semiconductor chip by dicing a semiconductor wafer with the formation of a modifier layer.

[0557] Figure 5A , Figure 5B , Figure 5C This is a cross-sectional view illustrating another example of a method of using a semiconductor device manufacturing wafer, showing the wafer being attached to a semiconductor chip for use. In this method, the semiconductor device manufacturing wafer is used as a die bond. Here, [the following is taken as an example]. Figure 1 Taking the semiconductor device manufacturing chip 101 shown as an example, its usage will be explained.

[0558] First, before using the semiconductor device manufacturing wafer 101, such as Figure 4A As shown, a semiconductor wafer 9' is prepared, and a backing tape (sometimes called surface protection tape) 8 is attached to its circuit forming surface 9a'.

[0559] exist Figure 4A , Figure 4B , Figure 4C In the attached figure, the symbol W 9’ This indicates the width of the semiconductor wafer at 9'.

[0560] Next, as Figure 4B As shown, a modified layer 90' is formed inside the semiconductor wafer 9' by irradiating a laser with a focal point set inside the semiconductor wafer 9' (illustration omitted).

[0561] The laser is preferably irradiated onto the semiconductor wafer 9' from the back side 9b' side.

[0562] At this point, the focal point is the predetermined dicing (cutting) position of the semiconductor wafer 9', which is set in such a way that semiconductor chips of the target size, shape and number can be obtained from the semiconductor wafer 9'.

[0563] Next, the back side 9b' of the semiconductor wafer 9' is ground using a grinder (illustration omitted). This adjusts the thickness of the semiconductor wafer 9' to the target value, and simultaneously, by utilizing the force applied during grinding, the semiconductor wafer 9' is diced at the location where the modified layer 90' is formed, as shown. Figure 4C As shown, multiple semiconductor chips 9 are fabricated.

[0564] Unlike other locations on the semiconductor wafer 9', the modified layer 90' of the semiconductor wafer 9' is modified by irradiation with a laser, and its strength is weakened. Therefore, by applying a force to the semiconductor wafer 9' on which the modified layer 90' is formed, the semiconductor wafer 9' cracks at the location of the modified layer 90', and multiple semiconductor chips 9 can be obtained.

[0565] Through the above method, a semiconductor chip 9, which is intended for use as a semiconductor device manufacturing wafer 101, can be obtained. More specifically, through this process, a semiconductor chip assembly 901 can be obtained in which multiple semiconductor chips 9 are neatly arranged and fixed on a back-abrasion adhesive tape 8.

[0566] When viewed from above, the planar shape formed by connecting the outermost portion of the semiconductor chipset 901 (sometimes referred to in this specification as the "planar shape of the semiconductor chipset") is exactly the same as the planar shape of the semiconductor wafer 9' when viewed from above in the same manner, or the difference between the two planar shapes is so slight as to be negligible that it can be said that the planar shape of the semiconductor chipset 901 is substantially the same as the planar shape of the semiconductor wafer 9'.

[0567] Therefore, as Figure 4C As shown, the width of the planar shape of the semiconductor chipset 901 can be considered to be the same as the width W of the semiconductor wafer 9'. 9’ The same. Furthermore, the maximum width of the planar shape of the semiconductor chipset 901 can be considered to be the same as the width W of the semiconductor wafer 9'. 9’ The maximum values ​​are the same.

[0568] In addition, although this shows a case where a semiconductor chip 9 can be made from a semiconductor wafer 9', depending on the conditions when grinding the back side 9b' of the semiconductor wafer 9', a portion of the semiconductor wafer 9' may not be divided into semiconductor chips 9.

[0569] Next, using the semiconductor chip 9 (semiconductor chip set 901) obtained above, a semiconductor chip with a film adhesive is manufactured.

[0570] First, such as Figure 5A As shown, while heating a semiconductor device manufacturing wafer 101 in a state where the release film 15 has been removed, a film-like adhesive 14 is applied to the back surface 9b of all semiconductor chips 9 in the semiconductor chip assembly 901. At this time, the film-like adhesive 14 can be applied to an incompletely diced semiconductor wafer.

[0571] The width W of the intermediate layer 13 in the semiconductor device manufacturing wafer 101 13 The maximum value and the width W of the film adhesive 14 14 The maximum values ​​are all related to the width W of the 9' of the semiconductor wafer. 9’ (In other words, the maximum value of the width of semiconductor chipset 901) is exactly the same, or although different, the error is slight and they are almost identical.

[0572] The attachment of the film adhesive 14 (semiconductor device manufacturing wafer 101) to the semiconductor chip assembly 901 at this time can be performed using the same method as the attachment of the film adhesive 14 (semiconductor device manufacturing wafer 101) to the semiconductor wafer 9' in the manufacturing method 1, except that the semiconductor chip assembly 901 is used instead of the semiconductor wafer 9'.

[0573] Next, the backing adhesive tape 8 is removed from the semiconductor chip assembly 901, which is in a fixed state. Then, as... Figure 5B As shown, the semiconductor device manufacturing wafer 101 is cooled while being stretched in a direction parallel to its surface (e.g., the first surface 12a of the adhesive layer 12), thereby expanding it. Here, arrow E1 indicates the direction of expansion of the semiconductor device manufacturing wafer 101. By expanding in this way, the film adhesive 14 can be cut along the outer periphery of the semiconductor chip 9.

[0574] More specifically, the extended process can be described as follows.

[0575] Through an extended process, a plurality of semiconductor chips 914 with film-like adhesive are obtained, each having a semiconductor chip 9 and a cut film-like adhesive 140 disposed on its back side 9b. These semiconductor chips 914 with film-like adhesive are arranged in a neat manner and fixed on the intermediate layer 13 in the laminate 10, forming a semiconductor chip assembly 910 with film-like adhesive.

[0576] The semiconductor chip 914 with film-like adhesive and the semiconductor chip assembly 910 with film-like adhesive obtained here are basically the same as the semiconductor chip 914 with film-like adhesive and the semiconductor chip assembly 910 with film-like adhesive obtained in manufacturing method 1 described above.

[0577] In cases where a portion of the semiconductor wafer 9' is not divided into semiconductor chips 9 when it is divided as described above, this process can divide that portion into semiconductor chips.

[0578] In the expansion process, it is preferable to set the temperature of the semiconductor device manufacturing wafer 101 to below 0°C for expansion, and more preferably to set the temperature of the semiconductor device manufacturing wafer 101 to -5 to 5°C for expansion. By cooling and expanding the semiconductor device manufacturing wafer 101 in the above manner (performing cold expansion), it is easier to cut the film adhesive 14 with high precision.

[0579] The expansion process can be performed using known methods. For example, the area near the periphery of the unlaminated intermediate layer 13 and film adhesive 14 on the first surface 12a of the adhesive layer 12 in the semiconductor device manufacturing wafer 101 (the unlaminated area) can be fixed to a jig such as an annular frame (not shown). While adsorbing the back surface 11b of the substrate 11 of the semiconductor device manufacturing wafer 101 using an adsorption stage 40, the entire area of ​​the semiconductor device manufacturing wafer 101 in which the intermediate layer 13 and film adhesive 14 are laminated is pushed upward from the substrate 11 side along the direction from the substrate 11 to the adhesive layer 12 using the adsorption stage 40 and the pushing member (not shown), thereby expanding the semiconductor device manufacturing wafer 101.

[0580] The expansion speed (the speed at which the adsorption worktable and the pushing component rise) in the expansion process is, for example, 1 to 400 mm / s. Furthermore, the expansion amount in the expansion process is, for example, 3 to 16 mm.

[0581] Next, the adsorption worktable 40 and the pushing component are lowered, and the extended state of the extended process is released.

[0582] Typically, the adsorption stage 40 has a gap extending through its thickness direction. By depressurizing the side of the adsorption stage opposite to the side that contacts the semiconductor device manufacturing wafer 101, the semiconductor device manufacturing wafer 101 is adsorbed and fixed on the adsorption stage 40.

[0583] By making the maximum cross-sectional height of the back surface 11b of the substrate 11 below 2000 nm, the dissorption of the adsorption between the back surface 11b of the substrate 11 and the adsorption stage 40 can be suppressed during the extension process.

[0584] By making the surface roughness of the back surface 11b of the substrate 11 below 200 nm, the release of adsorption between the back surface 11b of the substrate 11 and the adsorption stage 40 can be suppressed during the extension process.

[0585] like Figure 5B As shown, in the expansion process, although the non-stacked area of ​​the unstacked intermediate layer 13 and film adhesive 14 in the first surface 12a of the adhesive layer 12 is almost parallel to the first surface 13a of the intermediate layer 13, as described above, in the state of expansion by pushing the semiconductor device manufacturing wafer 101 upward, the non-stacked area includes an inclined surface, and the height of the inclined surface gradually decreases as it approaches the outer periphery of the adhesive layer 12 in a direction opposite to the upward pushing direction.

[0586] In the extended process, by providing an intermediate layer 13 to the semiconductor device manufacturing wafer 101 (in other words, by providing a film adhesive 14 on the intermediate layer 13 before cutting), the film adhesive 14 can be cut with good precision at the target location (in other words, along the outer periphery of the semiconductor chip 9), thus suppressing cutting defects.

[0587] like Figure 5C As shown, after expansion, the semiconductor chip 914 with film adhesive is pulled away from the intermediate layer 13 in the laminate 10 to pick it up.

[0588] At this point, the picking can be performed using the same method as the picking in manufacturing method 1 described above, and the picking suitability is also the same as that in manufacturing method 1.

[0589] For example, in this process, when the silicon concentration in the first surface 13a of the intermediate layer 13 is 1 to 20%, the semiconductor chip 914 with film adhesive can be picked up more easily.

[0590] Furthermore, when the intermediate layer 13 contains, for example, an ethylene vinyl acetate copolymer as the non-silicone resin and a siloxane compound as the additive, and the content of the ethylene vinyl acetate copolymer in the intermediate layer is 90 to 99.99% by mass relative to the total mass of the intermediate layer, and the content of the siloxane compound in the intermediate layer is 0.01 to 10% by mass relative to the total mass of the intermediate layer, the semiconductor chip 914 with the film adhesive can be picked up more easily.

[0591] As a preferred embodiment of the method for manufacturing the semiconductor chip with the film-like adhesive described above, examples include:

[0592] A method for manufacturing a semiconductor chip with a film-like adhesive, comprising a semiconductor chip and a film-like adhesive disposed on the back side of the semiconductor chip, wherein the manufacturing method,

[0593] The semiconductor device manufacturing wafer includes the substrate, adhesive layer, intermediate layer, and film adhesive.

[0594] The manufacturing method includes: a step of forming a modified layer inside a semiconductor wafer by irradiating it with a laser focused at a focal point set inside the semiconductor wafer; a step of grinding the back side of the semiconductor wafer after the modified layer is formed, and simultaneously using the force applied to the semiconductor wafer during grinding, dividing the semiconductor wafer at the location where the modified layer is formed to obtain a semiconductor chip group in which multiple semiconductor chips are arranged in an orderly manner; a step of heating the semiconductor device manufacturing wafer while attaching the film-like adhesive thereto to the back side of all the semiconductor chips in the semiconductor chip group; and a step of cooling the semiconductor device manufacturing wafer after the semiconductor chips are attached, and using an adsorption stage to adsorb the substrate with the adhesive layer. The process involves: first, using the opposite side of the surface, and simultaneously using the adsorption stage and the pushing member to push the entire area of ​​the semiconductor device manufacturing wafer, where the interlayer and the film adhesive are stacked, upward from the substrate side; stretching the wafer in a direction parallel to its surface, thereby cutting the film adhesive along the outer periphery of the semiconductor chip to obtain a semiconductor chip assembly with film adhesive in which multiple semiconductor chips with film adhesive are neatly arranged on the interlayer; second, heating the periphery of the semiconductor chip assembly without film adhesive in the stretched laminate; and third, pulling the semiconductor chip with film adhesive from the interlayer to pick it up (in this specification, sometimes referred to as "manufacturing method 2").

[0595] At this point, either manufacturing method 1 or manufacturing method 2 is... Figure 1 The semiconductor device manufacturing wafer 101 shown is an example of its usage, but other semiconductor device manufacturing wafers involved in this embodiment can also be used in the same way. In this case, other processes can be appropriately added as needed based on the differences in the structure between the semiconductor device manufacturing wafer and the semiconductor device manufacturing wafer 101, thereby using the semiconductor device manufacturing wafer.

[0596] By heating the periphery of a semiconductor chip without a film-like binder (a semiconductor chip assembly with a film-like binder) in a laminate, the periphery can be caused to shrink. Simultaneously, the distance between adjacent semiconductor chips in the laminate, i.e., the slit width, can be made sufficiently wide and maintained with high uniformity. Furthermore, semiconductor chips with film-like binder can be picked up more easily.

[0597] (Third Implementation Plan)

[0598] Figure 6A , Figure 6B , Figure 6CThis is a cross-sectional view illustrating an example of a method for manufacturing a semiconductor chip intended for use in the manufacture of semiconductor devices. It shows a case where a semiconductor chip is manufactured by dicing a semiconductor wafer using a method such as Dicing before Grinding (DBG).

[0599] like Figure 6A As shown, in this method, a groove 90' ​​is formed by half-cutting one surface 9a' of the semiconductor wafer 9', which serves as the circuit formation surface, using methods such as blade cutting, laser cutting, and water cutting.

[0600] Next, as Figure 6B As shown, the back surface (back side) 9b' of the semiconductor wafer 9', which is opposite to the surface (circuit forming surface) 9a', is polished. The polishing of the back surface 9b' can be performed using known methods, such as using a polishing machine 62. The polishing of the back surface 9b' is preferably performed by attaching a back polishing tape 8 to the surface 9a' of the semiconductor wafer 9' as shown here.

[0601] Next, the back surface 9b' is ground until the groove 90' ​​is reached, as shown below. Figure 6C As shown, a plurality of semiconductor chips 9 are obtained from a semiconductor wafer 9'. The back surface 9b' of the semiconductor wafer 9' is the back surface 9b of the semiconductor chip 9, that is, the surface for which the film adhesive 14 is disposed.

[0602] exist Figure 6A , Figure 6C In the attached figure, the symbol W 9’ This indicates the width of the semiconductor wafer at 9'.

[0603] Thus, a semiconductor chip 9, which is intended for use in semiconductor device manufacturing wafer 101, can be obtained. More specifically, through this process, a semiconductor chip assembly 902 can be obtained in which multiple semiconductor chips 9 are neatly arranged and fixed on a back-abrasion tape 8.

[0604] In the manufacturing method of the third embodiment, except that the semiconductor chip set 902 is replaced by the semiconductor chip set 901 in the manufacturing method of the second embodiment, the semiconductor chip with film adhesive can be obtained by expansion in the same way.

[0605] The extension in the third embodiment of the manufacturing method can be carried out using the same method as the extension in manufacturing method 2 described above, and the suitability of the extension is also the same as that of the extension in manufacturing method 2.

[0606] In the third embodiment of the manufacturing method, the picking can be performed using the same method as the picking in manufacturing method 1 described above, and the picking suitability is also the same as that in manufacturing method 1.

[0607] As a preferred embodiment of the method for manufacturing the semiconductor chip with film-like adhesive, for example, a method for manufacturing a semiconductor chip with film-like adhesive is provided, comprising a semiconductor chip and a film-like adhesive disposed on the back side of the semiconductor chip. In this method, the semiconductor device manufacturing wafer comprises a substrate, an adhesive layer, an intermediate layer, and a film-like adhesive. The method includes: a step of halving a semiconductor wafer to form trenches on one surface of the semiconductor wafer that serves as a circuit formation surface; grinding the back side of the semiconductor wafer after the trenches are formed until the trench formation portion is reached, and dividing the semiconductor wafer at the trench formation portion to obtain a semiconductor chip group in which multiple semiconductor chips are arranged in an orderly manner; and attaching the film-like adhesive to the semiconductor chip while heating the semiconductor device manufacturing wafer. The process includes: processing the back side of all semiconductor chips in the group; cooling the semiconductor device manufacturing wafer attached to the semiconductor chips while using an adsorption stage to adsorb the surface of the substrate opposite to the side with the adhesive layer, and simultaneously using the adsorption stage and an upward pushing member to push the entire area of ​​the semiconductor device manufacturing wafer with the interlayer and the film adhesive stacked on it upward from the substrate side, stretching it in a direction parallel to its surface, thereby cutting the film adhesive along the outer periphery of the semiconductor chip, and obtaining a semiconductor chip group with film adhesive in which multiple semiconductor chips with film adhesive are neatly arranged on the interlayer; heating the periphery of the semiconductor chips without film adhesive (the semiconductor chip group with film adhesive) in the stretched laminate; and picking up the semiconductor chips with film adhesive by pulling them away from the interlayer.

[0608] Example

[0609] The present invention will now be described in more detail using specific embodiments. However, the present invention is not limited to the embodiments shown below.

[0610] <<Raw Materials for the Preparation of Adhesive Compositions>>

[0611] The following are the raw materials used to prepare the adhesive composition.

[0612] [Polymer component (a)]

[0613] (a)-1: An acrylic resin (weight average molecular weight of 800,000 and glass transition temperature of 9°C) obtained by copolymerizing methyl acrylate (95 parts by mass) and 2-hydroxyethyl acrylate (5 parts by mass).

[0614] [Epoxy Resin (b1)]

[0615] (b1)-1: Cresol phenolic varnish epoxy resin with addition of acryloyl groups ("CNA147" manufactured by Nippon Kayaku Co., Ltd., with an epoxy equivalent of 518 g / eq, a number-average molecular weight of 2100, and an equal amount of unsaturated groups to epoxy groups)

[0616] [Thermosetting agent (b2)]

[0617] (b2)-1: Aryl alkyl phenolic resin (Milex XLC-4L manufactured by Mitsui Chemicals, Inc., with a number average molecular weight of 1100 and a softening point of 63°C)

[0618] [Fill material (d)]

[0619] (d)-1: Spherical silica (Admatechs. “YA050C-MJE”, average particle size 50nm, methacrylate silane treated product)

[0620] [Coupled agent(e)]

[0621] (e)-1: Silane coupling agent, 3-glycidyl etheroxypropylmethyldiethoxysilane ("KBE-402" manufactured by Shin-Etsu Chemical Co., Ltd.)

[0622] [Crosslinking agent (f)]

[0623] (f)-1: Toluene diisocyanate crosslinking agent (TOSOH CORPORATION manufactures "CORONATE L")

[0624] [Reference Example 1]

[0625] <<Manufacturing and Evaluation of Semiconductor Device Wafers (1)>>

[0626] <Substrate Manufacturing>

[0627] Low-density polyethylene (LDPE, "SUMIKATHENE L705" manufactured by Sumitomo Chemical Co., Ltd.) is melted using an extruder, the melt is extruded using a T-die method, and the extrudate is biaxially stretched using cooling rollers to obtain a substrate made of LDPE (110 μm thick).

[0628] <Preparation of the Adhesive Layer>

[0629] A non-energy-curable adhesive composition was prepared, comprising 100 parts by weight of acrylic resin ("ORIBAIN BPS 6367X" manufactured by TOYOCHEM CO.,LTD.) as an adhesive resin (I-1a) and crosslinking agent ("BXX 5640" manufactured by TOYOCHEM CO.,LTD.) (1 part by weight).

[0630] Next, using a release film that has undergone a single-sided release treatment on polyethylene terephthalate film prepared by silicone treatment, the adhesive composition obtained above is applied to the release-treated surface of the release film, and then heated and dried at 100°C for 2 minutes, thereby producing a non-energy-curable adhesive layer (10 μm thick).

[0631] <Creating the Intermediate Layer>

[0632] At room temperature, 15 g of ethylene vinyl acetate copolymer (EVA, weight average molecular weight of 30,000, content of structural units derived from vinyl acetate of 25% by mass) was dissolved in 85 g of tetrahydrofuran. 1.5 g of a siloxane compound (polydimethylsiloxane, "BYK-333" manufactured by BYK Japan KK., with 45 to 230 structural units represented by the chemical formula "-Si(-CH3)2-O-" in 1 molecule) was added to the resulting solution and stirred to prepare a composition for forming an intermediate layer.

[0633] Using a release film that has undergone a single-sided release treatment on polyethylene terephthalate film prepared by silicone treatment, the aforementioned intermediate layer forming composition is applied to the release-treated surface of the release film, and then heated and dried at 70°C for 5 minutes to produce an intermediate layer (20 μm thick).

[0634] <Preparation of film adhesives>

[0635] A thermosetting adhesive composition containing polymer component (a)-1 (100 parts by mass), epoxy resin (b1)-1 (10 parts by mass), thermosetting agent (b2)-1 (1.5 parts by mass), filler (d)-1 (75 parts by mass), coupling agent (e)-1 (0.5 parts by mass) and crosslinking agent (f)-1 (0.5 parts by mass) is prepared.

[0636] Next, using a release film that has undergone a single-sided release treatment on polyethylene terephthalate film prepared by silicone treatment, the adhesive composition obtained above is applied to the release-treated surface of the release film, and then heated and dried at 80°C for 2 minutes to produce a thermosetting film adhesive (7 μm thick).

[0637] <Manufacturing of Semiconductor Device Wafers>

[0638] The exposed side of the adhesive layer obtained above, opposite to the side with the release film, is bonded to a surface of the substrate obtained above, thereby producing a first intermediate laminate with a release film (in other words, a support sheet with a release film).

[0639] The exposed side of the film adhesive obtained above, which is opposite to the side with the release film, is bonded to the exposed side of the intermediate layer obtained above, which is opposite to the side with the release film, thereby producing a second intermediate laminate with a release film (a laminate of release film, intermediate layer, film adhesive and release film).

[0640] Next, for the second intermediate laminate with a release film, a cutting blade is used to punch holes from the release film to the film adhesive on the intermediate layer side, and the unwanted parts are removed, thereby creating a second intermediate laminate with a release film formed by sequentially stacking a film adhesive (7 μm thick), an intermediate layer (20 μm thick), and a release film with a circular planar shape (305 mm in diameter) on the release film on the film adhesive side along their thickness direction.

[0641] Next, the release film is removed from the first intermediate laminate with the release film obtained above, exposing one side of the adhesive layer.

[0642] Furthermore, the circular release film is removed from the second intermediate laminate with the release film obtained above, exposing one side of the intermediate layer.

[0643] Next, the newly exposed surface of the adhesive layer in the first intermediate laminate is bonded to the newly exposed surface of the intermediate layer in the processed second intermediate laminate. For the substrate and adhesive layer (i.e., support sheets) in the resulting laminate, a cutting blade (370 mm) is used to punch holes from the substrate side, with the support sheets having a circular planar shape (370 mm in diameter) and the circular film adhesive and intermediate layer (305 mm in diameter) being concentric, and unwanted portions are removed.

[0644] Thus, a semiconductor device manufacturing wafer with a release film is obtained, which is formed by sequentially stacking a substrate (110 μm thick), an adhesive layer (10 μm thick), an intermediate layer (20 μm thick), a film adhesive (7 μm thick) and a release film along their thickness directions.

[0645] <Calculation of the silicon concentration ratio on the side of the intermediate film adhesive>

[0646] In the manufacturing process of the aforementioned semiconductor device wafer, XPS is used to analyze the exposed surface of the intermediate layer before bonding with the adhesive layer to determine the concentration (atomic%) of carbon (C), oxygen (O), nitrogen (N), and silicon (Si), and the ratio (%) of silicon concentration to the total concentration (%) of carbon, oxygen, nitrogen, and silicon is calculated based on the measured values.

[0647] XPS analysis used an X-ray photoelectron spectroscopy analyzer (the "Quantra SXM" manufactured by ULVAC, Inc.), with an illumination angle of 45° and an X-ray beam diameter of [missing information]. The output was implemented under conditions of 4.5W. The results, along with the concentrations of other elements (%), are shown in the "Proportion of element concentrations in the intermediate layer (%)" column of Table 1.

[0648] <Evaluation of the effect of suppressing chip generation during blade cutting>

[0649] [Manufacturing of silicon chipsets with film-like binders]

[0650] Remove the release film from the semiconductor device manufacturing wafer obtained above.

[0651] Using a silicon wafer (300 mm in diameter and 75 μm thick) that has undergone dry polishing, the semiconductor device manufacturing wafer is heated to 60°C and then bonded to the back side (polished surface) of the silicon wafer using a laminator (Adwill RAD2500 manufactured by Lintec Corporation). This results in a laminate consisting of a substrate, adhesive layer, intermediate layer, film adhesive, and silicon wafer stacked sequentially along their thickness directions.

[0652] Next, the area near the periphery of the first side of the adhesive layer in the laminate (the non-laminated area) where no intermediate layer is provided is fixed to the annular frame for wafer dicing.

[0653] Next, a dicing device (DISCO Corporation's "DFD6361") is used to dice the silicon wafer, thereby cutting the film adhesive to obtain a wafer of 8mm in size.

[0654] The silicon chip measures 8mm x 100mm. The dicing is performed as follows: the blade rotation speed is set to 30,000 rpm and the blade travel speed is set to 30mm / second. For semiconductor device manufacturing wafers, the blade cuts from the adhesive-coated surface of the silicon wafer to the midpoint of the intermediate layer (i.e., the entire thickness of the adhesive-coated surface and the midpoint of the intermediate layer from its adhesive-coated side). The blade used is a DISCO Corporation "Z05-SD2000-D1-90 CC".

[0655] Thus, a silicon chip assembly with film adhesive is obtained, in which multiple silicon chips with film adhesive, having silicon chips and cut film adhesive disposed on their back sides, are neatly arranged and fixed on the middle layer of the laminate through the film adhesive.

[0656] [Evaluation of the effect of suppressing chip generation]

[0657] Using a digital microscope (KEYENCE CORPORATION's "VH-Z100"), the silicon chip assembly with the aforementioned film-like adhesive was observed from above the silicon chip side to confirm whether cutting chips were generated. Cases with no cutting chips at all were categorized as "A," and cases with even a small amount of cutting chips were categorized as "B." The results are shown in Table 1.

[0658] <Evaluation of the cutability of the film adhesive during expansion>

[0659] [Manufacturing of silicon chipsets with film-like binders]

[0660] A silicon wafer with a planar circular shape, a diameter of 300 mm, and a thickness of 775 μm is used. A backing adhesive tape ("Adwill E-3100TN" manufactured by LINTEC Corporation) is attached to one side of the silicon wafer.

[0661] Next, a laser irradiation device (DISCO Corporation's "DFL73161") is used to irradiate the silicon wafer, focusing the laser light onto a focal point located inside the silicon wafer, thereby forming a modified layer inside the silicon wafer. At this time, the focal point can be obtained from the silicon wafer in multiple 8mm increments.

[0662] The silicon wafer is configured as an 8mm x 10mm silicon chip. Furthermore, a laser is irradiated onto the silicon wafer from the other side (the side without the backing adhesive tape).

[0663] Next, the other side of the silicon wafer is ground using a grinder, thereby reducing the thickness of the silicon wafer to 30 μm. Simultaneously, by utilizing the force applied during grinding, the silicon wafer is diced at the location where the modified layer is formed, thus forming multiple silicon chips. This results in a silicon chip assembly in which multiple silicon chips are neatly arranged and fixed on a back-polishing tape.

[0664] Next, using a laminator ("Adwill RAD2500" manufactured by LINTEC Corporation), while heating the semiconductor device manufacturing wafer obtained above to 60°C, the film-like adhesive therein is applied to the other side (in other words, the polished side) of all the silicon chips (silicon chipsets).

[0665] Next, the area near the periphery of the first side of the adhesive layer of the semiconductor device manufacturing wafer attached to the silicon chip assembly (the non-stacked area) where no intermediate layer is provided is fixed to the annular frame for wafer dicing.

[0666] Next, the back-abrasion tape is removed from the silicon chip assembly, which is now in a fixed state. Then, using a fully automated chip dicing machine (DISCO Corporation's "DDS2300"), the semiconductor device fabrication wafer is cooled at 0°C while being extended in a direction parallel to its surface, thereby cutting the film adhesive along the outer periphery of the silicon chip. At this time, the periphery of the semiconductor device fabrication wafer is fixed, and from the substrate side of the semiconductor device fabrication wafer, the area where the interlayer and film adhesive are stacked is pushed upwards by only 15 mm, thereby extending the wafer.

[0667] Thus, a silicon chip assembly with film adhesive is obtained, in which multiple silicon chips with film adhesive, having silicon chips and cut film adhesive disposed on the other side (polished surface) of the silicon chips, are neatly arranged and fixed on an intermediate layer.

[0668] Next, after temporarily releasing the expansion of the semiconductor device manufacturing wafer, at room temperature, the laminate (i.e., the laminated sheet) formed by stacking the substrate, adhesive layer, and intermediate layer is expanded in a direction parallel to the first surface of the adhesive layer. Furthermore, while maintaining this expanded state, the periphery of the silicon chip in the laminate that does not have the film-like adhesive is heated. This causes the periphery to shrink, while simultaneously maintaining the cut width between adjacent silicon chips on the laminate at a certain value or higher.

[0669] [Evaluation of the cutability of film adhesives]

[0670] During the manufacturing of the aforementioned silicon chip assembly with film-like adhesive, a digital microscope (KEYENCE CORPORATION's "VH-Z100") was used to observe the silicon chip assembly from above the silicon chip side. Next, the number of cut lines that should have formed along one direction and those extending orthogonally to that direction, assuming the film-like adhesive is normally cut by the expansion of the semiconductor device manufacturing wafer, was determined. The number of cut lines that were not actually formed and the number of incomplete cut lines were also identified. The cutability of the film-like adhesive was evaluated according to the following evaluation criteria. The results are shown in Table 1.

[0671] (Evaluation Criteria)

[0672] A: The total number of cut lines of the actually unformed film adhesive and the cut lines of the incompletely formed film adhesive is less than 5.

[0673] B: The total number of cut lines of the actually unformed film adhesive and the cut lines of the incomplete film adhesive is more than 6.

[0674] <Evaluation of the pick-up performance of the extended silicon chip with film-like adhesive>

[0675] After evaluating the cutability of the film adhesive as described above, a silicon chip assembly with film adhesive and a die bonding device ("PU100" manufactured by FASFORD TECHNOLOGY CO.,LTD.) were used to pick up silicon chips with film adhesive from the middle layer of the laminate under the conditions of a push-up height of 250 μm, a push-up speed of 5 mm / s, and a push-up time of 500 ms. The case where all silicon chips with film adhesive could be picked up normally was evaluated as "A", and the case where more than one silicon chip with film adhesive could not be picked up normally was evaluated as "B". The results are shown in Table 1.

[0676] <Determination of T-peel strength between interlayer and film adhesive>

[0677] Remove the release film from the semiconductor device manufacturing wafer obtained above.

[0678] The entire exposed surface of the film-like adhesive in the resulting semiconductor device manufacturing wafer is attached to the adhesive surface of an adhesive tape ("PET50(A)PLシン8LK" manufactured by Lintec Corporation) having a polyethylene terephthalate layer. The resulting laminate is then cut into 50mm×100mm sizes to produce a test piece.

[0679] For this test piece, following JIS K6854-3, the laminate of the substrate, adhesive layer, and intermediate layer (i.e., the laminated sheet), and the laminate of the film adhesive and adhesive tape were pulled apart, thereby causing the test piece to peel in a T-shape. The maximum value of the peel force (mN / 50mm) measured at this time was used as the T-peel strength. At this time, the peel speed was set to 50mm / min. The results are shown in Table 1.

[0680] <<Follow-up to <<Manufacturing and Evaluation of Semiconductor Device Manufacturing Wafers (1)>>>

[0681] [Reference Example 2]

[0682] Except for increasing the coating amount of the composition for forming the intermediate layer to make the thickness of the intermediate layer 80 μm instead of 20 μm, a wafer for manufacturing a semiconductor device was manufactured and evaluated using the same method as in Reference Example 1. The results are shown in Table 1.

[0683] [Reference Example 3]

[0684] Except that the siloxane compound was not added when preparing the composition for forming the intermediate layer, and the amount of the ethylene vinyl acetate copolymer was set to 16.5 g instead of 15 g (in other words, the same mass of the ethylene vinyl acetate copolymer was used to replace the siloxane compound, thereby dissolving only the ethylene vinyl acetate copolymer in tetrahydrofuran), a semiconductor device manufacturing wafer was manufactured and evaluated using the same method as in Reference Example 1. The results are shown in Table 1. A "-" in the additives column of Table 1 indicates that the additive was not used.

[0685] [Comparative Example 1]

[0686] Except that, in preparing the interlayer forming composition, the same mass of ethylene vinyl acetate copolymer (EVA, weight average molecular weight of 200,000, and 25% by mass of structural units derived from vinyl acetate) was used instead of the ethylene vinyl acetate copolymer, and the coating amount of the interlayer forming composition was increased to make the interlayer thickness 80 μm instead of 20 μm, a semiconductor device manufacturing wafer was manufactured and evaluated using the same method as in Reference Example 1. The results are shown in Table 1.

[0687] [Comparative Example 2]

[0688] Except that, in preparing the composition for forming the intermediate layer, the same mass of ethylene vinyl acetate copolymer (EVA, weight-average molecular weight of 200,000, and 25% by mass of structural units derived from vinyl acetate) was used instead of the ethylene vinyl acetate copolymer, a semiconductor device manufacturing wafer was manufactured and evaluated using the same method as in Reference Example 1. The results are shown in Table 1.

[0689] [Table 1]

[0690]

[0691] Based on the above results, it can be seen that, for Reference Examples 1 to 3, the generation of cutting chips is suppressed during blade cutting, and the poor cutting of the film adhesive is suppressed during expansion, resulting in excellent dicing suitability of the silicon wafer.

[0692] For Reference Examples 1 to 3, the weight-average molecular weight of the ethylene vinyl acetate copolymer, which is the main component in the intermediate layer of the semiconductor device manufacturing wafer, is 30,000.

[0693] In addition, for Reference Examples 1 to 3, the content of the ethylene vinyl acetate copolymer in the intermediate layer is 90.9% by mass or more relative to the total mass of the intermediate layer, and the content of the siloxane compound is 9.1% by mass or less relative to the total mass of the intermediate layer.

[0694] Furthermore, for Reference Examples 1-2, the extended silicon chip with film-like adhesive exhibits excellent pick-up performance.

[0695] For Reference Examples 1 and 2, the T-peel strength between the intermediate layer and the film adhesive was less than 100 mN / 50 mm, which is moderately low, and the silicon concentration of the intermediate layer was 9%, which is moderately high. These evaluation results are consistent with the above-mentioned evaluation results of the pick-up performance of silicon chips with film adhesive.

[0696] For Reference Example 3, the intermediate layer in the semiconductor device manufacturing wafer does not contain the siloxane compound.

[0697] Although the only difference between the semiconductor device manufacturing wafers in Reference Examples 1 and 2 is the thickness of the intermediate layer, the T-shaped peel strength between the intermediate layer and the film adhesive in Reference Example 2 is smaller than that in Reference Example 1. Therefore, the silicon chip with film adhesive in Reference Example 2 is easier to pick up compared to Reference Example 1. This is presumably because, even though the ratio (mass%) of the siloxane compound content in the intermediate layer to the total mass of the intermediate layer is the same in Reference Examples 1 and 2, the siloxane compound content (mass parts) in the intermediate layer of Reference Example 2 is higher than that in Reference Example 1. This makes it easier for the siloxane compounds to exist unevenly on both sides and in the vicinity of the intermediate layer, resulting in a higher amount of unevenly distributed siloxane compounds in Reference Example 2 compared to Reference Example 1.

[0698] In addition, for Reference Examples 1-3, no nitrogen was detected when performing XPS analysis on the exposed surface of the intermediate layer.

[0699] However, in Comparative Examples 1 and 2, the generation of cutting chips was not suppressed during blade cutting, resulting in poor dicing suitability of the silicon wafers.

[0700] For Comparative Examples 1 and 2, the weight-average molecular weight of the ethylene vinyl acetate copolymer, which is the main component in the intermediate layer of the semiconductor device manufacturing wafer, is 200,000.

[0701] Furthermore, the only difference between the semiconductor device manufacturing wafers in Comparative Examples 1 and 2 is the thickness of the intermediate layer. The relationship between the T-type peel strength between the intermediate layer and the film adhesive in Comparative Examples 1 and 2 shows the same tendency as in Reference Examples 1 and 2.

[0702] Furthermore, for Comparative Examples 1 and 2, no nitrogen was detected when XPS analysis was performed on the exposed surface of the intermediate layer.

[0703] [Example 1]

[0704] <<Manufacturing and Evaluation of Semiconductor Device Wafers (2)>>

[0705] <Manufacturing of Semiconductor Device Wafers>

[0706] The substrate is manufactured in the same manner as in Reference Example 1.

[0707] The maximum cross-sectional height Rt of one side of the substrate is 1500 nm, and the surface roughness Ra is 140 nm (sometimes this side is referred to as a smooth surface).

[0708] Furthermore, the maximum cross-sectional height Rt of the other surface is 6000 nm, and the surface roughness Ra is 600 nm (this surface is sometimes referred to as the rough surface).

[0709] In addition, carbon black (0.5 parts by weight) as a coloring pigment was added to the adhesive composition. Furthermore, the coating amount of the adhesive composition was increased, and the thickness of the adhesive layer was set to 20 μm instead of 10 μm.

[0710] Furthermore, when preparing the composition for forming the intermediate layer, ethylene vinyl acetate copolymer (EVA, weight average molecular weight of 30,000, content of structural units derived from vinyl acetate of 20% by mass) is used instead of ethylene vinyl acetate copolymer (EVA, weight average molecular weight of 30,000, content of structural units derived from vinyl acetate of 25% by mass).

[0711] The exposed surface of the adhesive layer obtained above, opposite to the side with the release film, is bonded to a rough surface of the substrate obtained above, thereby producing a first intermediate laminate with a release film (in other words, a support sheet with a release film).

[0712] Apart from the points mentioned above, a semiconductor device manufacturing wafer is manufactured using the same method as in Reference Example 1.

[0713] Thus, a semiconductor device manufacturing wafer with a release film is obtained, which is formed by sequentially stacking a substrate (110 μm thick), an adhesive layer (20 μm thick), an intermediate layer (20 μm thick), a film adhesive (7 μm thick) and a release film along their thickness directions.

[0714] The surface of the substrate of the semiconductor device manufacturing wafer of Example 1, which is opposite to the side with the adhesive layer, is a smooth surface.

[0715] <Determination of Total Transmittance and Haze of Support Sheet>

[0716] The release film on the first intermediate laminate obtained above is removed to obtain a support sheet composed of a substrate and an adhesive layer.

[0717] For the obtained support sheet, the total transmittance (%) was measured using a haze meter (manufactured by Nippon Denshoku Industries, Co., LTD., NDH7000) according to JIS K7361-1:1997, and the haze value (%) was measured according to JIS K7136:2000. The results are shown in Table 2.

[0718] <Determination of the maximum cross-sectional height Rt and arithmetic mean roughness Ra on the back side of the substrate>

[0719] The maximum cross-sectional height Rt and arithmetic mean roughness Ra of the substrate of the semiconductor device manufacturing wafer obtained above, on the side opposite to the side with the adhesive layer (the back side of the substrate), are measured.

[0720] The maximum cross-sectional height Rt was determined according to JIS B 0601:2013 (ISO 4287:1997, Amd.1:2009). The arithmetic mean roughness Ra was determined according to JIS B0601:2001. The results are shown in Table 2.

[0721] <Evaluation of the identification of the periphery of the non-laminated region of the adhesive layer>

[0722] In the semiconductor device manufacturing wafer obtained above, the maximum width (i.e., diameter) of the intermediate layer and the maximum width (i.e., diameter) of the film adhesive are both smaller than the maximum width of the adhesive layer and the maximum width of the substrate.

[0723] To evaluate whether the periphery of the unlaminated intermediate layer of the adhesive layer and the film adhesive area (non-laminated area) can be identified using a laminator, the following steps should be followed.

[0724] First, the release film on the semiconductor device manufacturing wafer obtained above is removed.

[0725] A silicon wafer (300 mm in diameter and 75 μm in thickness) with its back side ground by dry polishing is prepared.

[0726] To evaluate whether the aforementioned semiconductor device manufacturing wafer could be heated to 60°C and then bonded to the back side (polished surface) of a silicon wafer using a laminator (Lintec Corporation's "Adwill RAD2700"), the following steps were performed. The results are shown in Table 2.

[0727] (Evaluation Criteria)

[0728] A: It can identify the periphery of the non-stacked area of ​​the adhesive layer and can attach semiconductor device manufacturing wafers to silicon wafers.

[0729] B: Unable to identify the periphery of the non-stacked area of ​​the adhesive layer, making it impossible to attach the semiconductor device manufacturing chip to the silicon wafer.

[0730] <Evaluation of incision retention during cold expansion>

[0731] [Manufacturing of silicon chipsets with film-like binders]

[0732] First, a cutting device (DISCO Corporation's "DFD6361") is used to cut a silicon wafer (300 mm in diameter and 775 μm thick) from one of the surfaces of the silicon wafer that serves as the circuit formation surface, thereby halving the silicon wafer.

[0733] The cutting at this time is carried out using a blade (DISCO Corporation's "ZH05-SD2000-N1-90") at a blade rotation speed of 50,000 rpm, a blade movement speed of 25 mm / s, and a cutting depth of 75 μm.

[0734] Next, a backing tape ("Adwill E-3100TN" manufactured by Lintec Corporation) is attached to the surface of the silicon wafer (i.e. the circuit forming surface).

[0735] Next, a back-grinding device (DISCO CORPORATION's "DGP8761") was used to grind the other side of the silicon wafer (the side without the back-grinding tape), thereby reducing the thickness of the silicon wafer to 30 μm. Simultaneously, the silicon wafer was diced to create multiple silicon chips with a size of 3 mm × 3 mm. This resulted in a silicon chip assembly with multiple silicon chips neatly arranged and fixed on the back-grinding tape.

[0736] Next, the release film on the semiconductor device manufacturing wafer obtained above is removed.

[0737] Using a laminator (Lintec Corporation's "Adwill RAD2700"), the aforementioned semiconductor device manufacturing wafer is heated to 60°C and then adhered to the side of the silicon chip assembly with the backing adhesive tape that is not attached, using its film-like adhesive. This results in a silicon chip assembly with film-like adhesive, formed by sequentially stacking a substrate, adhesive layer, intermediate layer, film-like adhesive tape, and silicon chip assembly along their thickness directions.

[0738] Next, the area near the periphery of the first side of the adhesive layer of the semiconductor device manufacturing wafer attached to the silicon chip assembly (the non-stacked area) without an intermediate layer is fixed to the annular frame for wafer dicing.

[0739] Next, the backing tape is removed from the silicon chip assembly with the film adhesive.

[0740] Next, the extended process is carried out using a fully automated chip dicing machine (DISCO Corporation's "DDS2300") in the following manner.

[0741] First, the surface of the silicon chip assembly substrate with the adhesive film, opposite to the side containing the adhesive layer (the back side of the substrate), is brought into contact with the adsorption stage and the pushing member. Next, the back side of the substrate is adsorbed using the adsorption stage.

[0742] At 0°C, while cooling the wafer used for manufacturing semiconductor devices, it is extended in a direction parallel to its surface, thereby cutting the film adhesive along the outer periphery of the silicon chip.

[0743] At this time, while fixing the periphery of the semiconductor device manufacturing wafer and adsorbing the back side of the substrate using an adsorption stage, the entire area of ​​the semiconductor device manufacturing wafer without the interlayer and film adhesive is pushed upward from the substrate side using the adsorption stage and the pushing member, thereby expanding it. The expansion speed at this time is 100 mm / s, and the expansion amount is 10 mm.

[0744] Next, the adsorption worktable and the upward pushing component are lowered to release the expanded state.

[0745] Thus, a silicon chip assembly with film adhesive is obtained, in which multiple silicon chips with film adhesive, having silicon chips and cut film adhesive disposed on the other side (polished surface) of the silicon chips, are neatly arranged and fixed on an intermediate layer.

[0746] Next, the semiconductor device manufacturing wafer is de-adsorbed and expanded from its state on the adsorption worktable.

[0747] Next, the periphery of the silicon chip in the laminate that does not have the film-like adhesive is heated.

[0748] [Evaluation of incision retention]

[0749] Next, the incision retention was evaluated using the following method.

[0750] That is, assuming that the film adhesive is normally cut through the expansion of the wafer used to manufacture the semiconductor device, in the expanded silicon chip assembly with film adhesive, multiple cuts extending along the MD of the intermediate layer and multiple cuts extending along the TD of the intermediate layer form a grid. Using a digital microscope (KEYENCE CORPORATION's "VH-Z100"), above the silicon chip side of the silicon chip assembly with its own film adhesive, the width of the cuts at a total of five locations at the intersection of the cuts extending along the MD of the intermediate layer and the cuts extending along the TD of the intermediate layer (in other words, the orthogonal locations) is measured: the central intersection location corresponding to approximately the center of the silicon wafer before dicing (sometimes referred to as the "first intersection location" in this specification); the intersection location located closest to the outer periphery of the silicon wafer before dicing, and located at two locations on the TD of the intermediate layer at the same position as the central intersection location (the first intersection location) (sometimes referred to as the "second intersection location" and the "fourth intersection location" in this specification); and the intersection location located closest to the outer periphery of the silicon wafer before dicing, and located at two locations on the MD of the intermediate layer at the same position as the central intersection location (the first intersection location) (sometimes referred to as the "third intersection location" and the "fifth intersection location" in this specification). That is, for each intersection position, there are 1 measured value of the cut width at both MD and TD, totaling 2, and thus the total number of measured values ​​of the cut width is 10 at 5 intersection positions.

[0751] Figure 7 The image shows the location where the incision width was measured at this point. Figure 7 In the figure, reference numeral 7 indicates a silicon chip, reference numeral 79a indicates a cut extending along the MD layer of the intermediate layer, and reference numeral 79b indicates a cut extending along the TD layer of the intermediate layer. When the semiconductor device manufacturing wafer used is... Figure 1 When manufacturing the semiconductor device shown, the first surface 13a of the intermediate layer 13 is exposed in the cuts 79a and 79b. Furthermore, the reference numeral W... a1 W a2 W a3 W a4 and W a5 Both refer to the width of the cut extending along the MD of the intermediate layer (in other words, the cut width of the TD at the intersection), while the reference numeral W... b1 W b2 W b3 W b4 and W b5 Both represent the width of the cut extending along the TD of the intermediate layer (in other words, the cut width of the MD at the intersection). The cut width W is measured. a1 and W b1The intersection is the first intersection. Furthermore, the cut width W is measured. a2 and W b2 The intersection is the second intersection, and the cut width W is measured. a4 and W b4 The intersection is the fourth intersection. Furthermore, the cut width W is measured. a3 and W b3 The intersection is the third intersection, and the cut width W is measured. a5 and W b5 The intersection is the fifth intersection.

[0752] in addition, Figure 7 A top view of a silicon chip assembly with a film-like adhesive is schematically shown to illustrate the location for measuring the notch width. While this illustrates a case where the notch width is constant regardless of location, it is merely an example. Even within the same silicon chip assembly with a film-like adhesive, the notch width may vary depending on the notch location. Furthermore, for each embodiment and comparative example, the notch width may vary even for notches at the same location within the silicon chip assembly with a film-like adhesive.

[0753] Next, based on the measured values ​​of the 10 incision widths mentioned above, the incision retention was evaluated according to the following evaluation criteria. The results are shown in Table 2.

[0754] (Evaluation Criteria)

[0755] A: The measured values ​​of the slit width are all above 10μm.

[0756] B: The measured width of one or more slits is less than 10 μm.

[0757] <Evaluation of the pick-up performance of the extended silicon chip with film-like adhesive>

[0758] After evaluating the cut retention during cold expansion as described above, a silicon chip assembly with film adhesive and a die bonding device ("PU100" manufactured by FASFORD TECHNOLOGY CO.,LTD.) were used. Under the conditions of a push-up height of 250 μm, a push-up speed of 5 mm / s, a push-up time of 500 ms, an expansion amount of 4 mm, and a push-up method of one pin, the back side of the substrate was adsorbed using an adsorption stage, and the support sheet was pushed up using the adsorption stage and the push-up member. At the same time, silicon chips with film adhesive were picked up from the middle layer of the laminate. The case where all silicon chips with film adhesive could be picked up normally was evaluated as "A", and the case where more than one silicon chip with film adhesive could not be picked up normally was evaluated as "B".

[0759] The results are shown in Table 2.

[0760] A silicon chip with adhesive film can be bonded to the circuit formation surface of a substrate using a film adhesive. Next, other semiconductor chips are further stacked on this semiconductor chip, wire-bonded, and then the entire assembly is sealed with resin. This process fabricates the target semiconductor device.

[0761] <<Manufacturing and Evaluation of Semiconductor Device Wafers>>

[0762] [Example 2]

[0763] Except that microparticles formed from a silicon-containing compound (“Tospearl120”, average particle size: 2.0 μm, refractive index: 1.43) (1.5 parts by mass) were added as filler material during the preparation of the adhesive composition, and no coloring pigment was added, a semiconductor device manufacturing wafer was manufactured and evaluated using the same method as in Example 1. The results are shown in Table 2.

[0764] [Example 3]

[0765] Except that no coloring pigment was added when preparing the adhesive composition, a semiconductor device manufacturing wafer was manufactured and evaluated using the same method as in Example 1. The results are shown in Table 2.

[0766] [Reference Example 4]

[0767] In manufacturing a semiconductor device wafer, the exposed surface of the adhesive layer opposite to the side with the release film is bonded to the smooth surface of the substrate obtained above, thereby obtaining a first intermediate laminate with a release film. The surface of the substrate of the semiconductor device wafer of Reference Example 4 opposite to the side with the adhesive layer is rough.

[0768] Except for the points mentioned above, a semiconductor device manufacturing wafer was manufactured and evaluated using the same method as in Example 1. The results are shown in Table 2.

[0769] [Reference Example 5]

[0770] Except for changing the blade cutting setting so that the size of the silicon chip assembly obtained from the silicon wafer is 4mm×4mm, the silicon wafer is half-cut using the same method as in Example 1.

[0771] Furthermore, during the manufacturing of the semiconductor device wafer, the exposed side of the adhesive layer opposite to the side with the release film is bonded to the smooth surface of the substrate obtained above, thereby obtaining a first intermediate laminate with a release film. Except as described above, the semiconductor device wafer is manufactured using the same method as in Example 1.

[0772] Except for the points mentioned above, a semiconductor device manufacturing wafer was manufactured and evaluated using the same method as in Example 1. The results are shown in Table 2.

[0773] [Table 2]

[0774]

[0775] For Examples 1-2 and Reference Examples 4-5, since the adhesive layer contains coloring pigments or filler materials, the haze of the support sheet composed of the substrate and the adhesive layer is 10 or more, or the total light transmittance of the support sheet is 70% or less.

[0776] Therefore, for Examples 1-2 and Reference Examples 4-5, the laminating machine can identify non-stacked areas of the adhesive layer and can attach semiconductor device manufacturing wafers to silicon wafers.

[0777] In Example 3, since the adhesive layer does not contain coloring pigments, the laminator failed to identify the non-overlapping areas of the adhesive layer.

[0778] Therefore, the device was set to semi-automatic mode, the attachment position was manually confirmed, and the semiconductor device manufacturing die was attached to the silicon wafer to continue evaluating the cut retention.

[0779] For Examples 1 to 3, the maximum cross-sectional height of the back side of the substrate is less than 2000 nm, and the surface roughness of the back side of the substrate is less than 200 nm.

[0780] Therefore, for Examples 1 to 3, the incision retention is sufficient.

[0781] This result is believed to be due to the ability to suppress the release of adsorption between the back side of the substrate and the adsorption stage during the expansion process, and to heat and fix the periphery of the silicon chip assembly without film-like adhesive in the laminate.

[0782] However, for Reference Example 4, the maximum cross-sectional height of the back side of the substrate is greater than 2000 nm, and the surface roughness of the back side of the substrate is greater than 200.

[0783] Therefore, for Reference Example 4, where the silicon chipset size is 3mm × 3mm, the cutout retention is not sufficient.

[0784] This result is believed to be due to the fact that, during the expansion, the adsorption between the back of the substrate and the adsorption stage was released, and the heating of the peripheral portion failed to proceed rapidly.

[0785] However, for Reference Example 5, the maximum cross-sectional height of the back side of the substrate is greater than 2000 nm, and the surface roughness of the back side of the substrate is greater than 200 nm.

[0786] For Reference Example 5, where the silicon chipset size is 4mm × 4mm, the cutout retention is sufficient.

[0787] Since the size of the silicon chip assembly in Reference Example 5 is larger than that in Reference Example 4, the area of ​​the gap between adjacent semiconductor chips is smaller relative to the total area of ​​the wafer used for manufacturing the semiconductor device. As a result, it is speculated that during expansion, the release of the adsorption between the back side of the substrate and the adsorption stage can be suppressed, and the peripheral portion can be heated and fixed.

[0788] When using the semiconductor device manufacturing wafers of Examples 1-3 and Reference Example 5, the adsorption between the back side of the substrate and the adsorption stage was not released during the pick-up process described above.

[0789] However, when using the semiconductor device manufacturing wafer of Reference Example 4, the adsorption between the back side of the substrate and the adsorption stage is released during the pick-up process described above.

[0790] For Reference Example 5, although the maximum cross-sectional height of the back side of the substrate is greater than 2000 nm and the surface roughness of the back side of the substrate is greater than 200 nm, the adsorption between the back side of the substrate and the adsorption stage is not released because the size of the silicon chip is 4 mm × 4 mm.

[0791] Industrial applicability

[0792] This invention can be used to manufacture semiconductor devices.

[0793] Explanation of reference numerals in the attached figures

[0794] 101: Semiconductor device manufacturing wafer; 11: Substrate; 12: Adhesive layer; 13: Intermediate layer; 13a: First side of the intermediate layer; 14: Film adhesive.

Claims

1. A wafer for manufacturing a semiconductor device, comprising a substrate, an adhesive layer, an intermediate layer, and a film-like adhesive. The semiconductor device manufacturing wafer is formed by sequentially laminating the adhesive layer, the intermediate layer, and the film adhesive on the substrate. The intermediate layer contains a non-silicone resin with a weight-average molecular weight of less than 100,000 as its main component. The maximum cross-sectional height of the surface of the substrate opposite to the side having the adhesive layer is less than 2000 nm. The surface roughness of the substrate surface opposite to the side having the adhesive layer is less than 200 nm.

2. The wafer for manufacturing a semiconductor device according to claim 1, wherein, The non-silicone resin is an ethylene vinyl acetate copolymer, and the content of the non-silicone resin is 90~99.99% by mass relative to the total mass of the intermediate layer.

3. The wafer for manufacturing a semiconductor device according to claim 1 or 2, wherein, The haze of the support sheet composed of the substrate and the adhesive layer is 10 or higher, or The total light transmittance of the support sheet is below 70%.

4. The wafer for manufacturing a semiconductor device according to claim 1 or 2, wherein, The semiconductor device manufacturing wafer is used to manufacture the semiconductor chip with film adhesive using a method for manufacturing semiconductor chips with film adhesive. The manufacturing method includes: The process of forming a laminate by attaching the semiconductor device manufacturing wafer to the back side of a semiconductor chip; At temperatures below 0°C, while adsorbing the surface of the substrate opposite to the side containing the adhesive layer using an adsorption stage, the entire area of ​​the semiconductor device manufacturing wafer having the interlayer and the film adhesive stacked is pushed upward from the substrate side using the adsorption stage and the pushing member, expanding and cutting the film adhesive, to obtain a semiconductor chip assembly with multiple semiconductor chips with film adhesive neatly arranged on the interlayer; and The process of heating the peripheral portion of the semiconductor chip in the expanded laminate that is not covered with the film-like adhesive. The area of ​​the semiconductor chip is 9mm². 2 the following.

5. The wafer for manufacturing a semiconductor device according to claim 1 or 2, wherein, The adhesive layer contains one or more selected from the group consisting of colorants and fillers.

6. A method for manufacturing a semiconductor chip with a wafer for manufacturing semiconductor devices, comprising: The process of forming a laminate by attaching a semiconductor device manufacturing wafer according to any one of claims 1 to 5 to the back side of a semiconductor chip; At a temperature below 0°C, while adsorbing the surface of the substrate opposite to the side having the adhesive layer using an adsorption stage, the entire area of ​​the semiconductor device manufacturing wafer having the interlayer and the film adhesive stacked is pushed upward from the substrate side using the adsorption stage and the pushing member, the film adhesive is expanded and cut, and a semiconductor chip assembly with multiple semiconductor chips with film adhesive neatly arranged on the interlayer is obtained. and A process of heating the periphery of the semiconductor chip in the expanded laminate that does not contain the film-like adhesive.

7. The application of a substrate, an adhesive layer, an intermediate layer, and a film-like adhesive in the manufacture of a semiconductor chip wafer with a film-like adhesive. Methods for manufacturing semiconductor chips with film-like adhesives include: The process of forming a laminate by attaching a semiconductor device manufacturing wafer to the back side of a semiconductor chip, wherein the semiconductor device manufacturing wafer is a semiconductor device manufacturing wafer as described in any one of claims 1 to 3 and 5, which is constructed by sequentially stacking the substrate, adhesive layer, intermediate layer and film adhesive. At a temperature below 0°C, while adsorbing the surface of the substrate opposite to the side having the adhesive layer using an adsorption stage, the entire area of ​​the semiconductor device manufacturing wafer having the interlayer and the film adhesive stacked is pushed upward from the substrate side using the adsorption stage and the pushing member, the film adhesive is expanded and cut, and a semiconductor chip assembly with multiple semiconductor chips with film adhesive neatly arranged on the interlayer is obtained. and The process of heating the peripheral portion of the semiconductor chip in the expanded laminate that is not covered with the film-like adhesive. The area of ​​the semiconductor chip is 9mm². 2 the following.

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