Method of manufacturing a semiconductor package

Abstract

The manufacturing method of a semiconductor package according to the present application includes: (A) a step of forming a temporary fixing material layer on a first surface of a board member including a plurality of semiconductor packages and a circuit exposure surface; (B) a step of adhering a pressure-sensitive adhesive film to a second surface of the board member; (C) a step of singulating the board member and the temporary fixing material layer on the pressure-sensitive adhesive film into a plurality of semiconductor packages with temporary fixing material pieces; (D) a step of arranging the plurality of semiconductor packages with temporary fixing material pieces on a support carrier in such a manner that the interval between adjacent semiconductor packages with temporary fixing material pieces is 0.1 mm or more; (E) a step of peeling the pressure-sensitive adhesive film from the support carrier and the plurality of semiconductor packages with temporary fixing material pieces; and (F) a step of forming a functional layer on the surface of the plurality of semiconductor packages with temporary fixing material pieces.

Description

TECHNICAL FIELD

[0001] The present application relates to a method for manufacturing a semiconductor package, and more particularly, to a method for manufacturing a semiconductor package having a functional layer (e.g., an electromagnetic wave shielding layer) on at least a part of a surface. BACKGROUND

[0002] In recent years, with the miniaturization, high functionality, and high integration of semiconductor packages, the multi-pin and high-density of semiconductor chips, and the narrow pitch of wiring have been developed. As a result, impedance increase or signal interference between signal lines easily causes a hindrance to the original performance of the semiconductor package. Patent Literature 1 discloses an adhesive film for semiconductor devices having an adhesive layer and an electromagnetic wave shielding layer. The adhesive film for semiconductor devices is produced by forming an electromagnetic wave shielding layer on the surface of the adhesive layer by a sputtering method or an evaporation method.

[0003] PRIOR ART DOCUMENTS

[0004] PATENT LITERATURE

[0005] Patent Literature 1: Japanese Patent Application Publication No. 2012-124466 SUMMARY

[0006] PROBLEMS TO BE SOLVED BY THE INVENTION

[0007] The present inventors and others have studied the following: by directly forming a functional layer such as an electromagnetic wave shielding layer on the surface of a semiconductor package, the semiconductor package is given a related function. The present application provides a method for efficiently manufacturing a semiconductor package in which at least a part of the surface is covered with a functional layer.

[0008] MEANS FOR SOLVING THE PROBLEMS

[0009] The method for manufacturing a semiconductor package according to the present application includes the following steps.

[0010] (A) A step of forming a temporary fixing material layer on a first surface of a board member having a plurality of semiconductor packages, and exposing a circuit surface or a first surface of a rewiring layer of the plurality of semiconductor packages.

[0011] (B) A step of attaching a first pressure-sensitive adhesive film to a second surface of the board member.

[0012] (C) A step of singulating the board member and the temporary fixing material layer on the first pressure-sensitive adhesive film into a plurality of semiconductor packages with temporary fixing material pieces.

[0013] (D) A process of arranging a plurality of the semiconductor packages with the temporary fixing material sheet on the support carrier in such a manner that the interval between the temporary fixing material sheets of the semiconductor packages adjacent to each other becomes 0.1 mm or more.

[0014] (E) A process of peeling the first pressure-sensitive adhesive film from the support carrier and the plurality of the semiconductor packages with the temporary fixing material sheet.

[0015] (F) A process of forming a functional layer on the surface of the plurality of the semiconductor packages with the temporary fixing material sheet exposed by the peeling of the first pressure-sensitive adhesive film.

[0016] In addition, after the process (A), a process of curing the temporary fixing material layer by ultraviolet irradiation or heat treatment can be performed.

[0017] According to the manufacturing method described above, in the process (D), the plurality of the semiconductor packages with the temporary fixing material sheet is arranged on the support carrier in such a manner that the interval between the semiconductor packages with the temporary fixing material sheet adjacent to each other becomes 0.1 mm or more, and therefore, in the process (F), a functional layer of a desired thickness can be formed on the side surface of the semiconductor package, for example, by sputtering or vapor deposition. In addition, in the process (F), since the functional layer is formed on the semiconductor package whose circuit surface is covered with the temporary fixing material sheet, it is possible to suppress the material constituting the functional layer from being caught in the circuit surface of the semiconductor package. The functional layer is, for example, an electromagnetic wave shielding layer (metal layer).

[0018] As the first pressure-sensitive adhesive film described above, a film having extensibility (hereinafter referred to as "extensible film") can be used. At this time, the process (D) can include the following steps.

[0019] (d1) The interval between the semiconductor packages with the temporary fixing material sheet adjacent to each other is enlarged by applying tension to the first pressure-sensitive adhesive film.

[0020] (d2) The plurality of the semiconductor packages with the temporary fixing material sheet on the first pressure-sensitive adhesive film is transferred to the support carrier in a state where tension is applied to the first pressure-sensitive adhesive film.

[0021] In the process (D), by performing these steps, the plurality of the semiconductor packages with the temporary fixing material sheet on the first pressure-sensitive adhesive film can be arranged on the support carrier uniformly.

[0022] After the process (F), in order to pick up the semiconductor package efficiently, the following process can be appropriately performed.

[0023] (G) A process of applying a second pressure-sensitive adhesive film in such a way as to cover a functional layer formed on the surface of a plurality of semiconductor packages with temporary fixing material sheets.

[0024] (H) The process of peeling the temporary fixing material sheet together with the support carrier from the multiple semiconductor packages on the second pressure-sensitive adhesive film.

[0025] When the aforementioned functional layer is an electromagnetic wave shielding layer, the semiconductor package can have a redistribution layer of less than 50 μm and a grounding point disposed on the side of the redistribution layer. Even if the redistribution layer of the semiconductor package is as thin as less than 50 μm, an electromagnetic wave shielding layer can be stably formed on the side of the redistribution layer in process (F). Therefore, the grounding point on the side of the redistribution layer can be electrically connected to the electromagnetic wave shielding layer (see reference). Figure 1 ).

[0026] Invention Effects

[0027] According to the present invention, a method for efficiently manufacturing a semiconductor package in which at least a portion of the surface is covered by a functional layer is provided. Attached Figure Description

[0028] Figure 1 This is a schematic cross-sectional view illustrating an example of a semiconductor package (fan-out wafer-level package) manufactured by the manufacturing method of the present invention.

[0029] Figure 2 This is a schematic plan view illustrating an example of a board component for a fan-out wafer-level package.

[0030] Figure 3 middle, Figure 3 (a) is a schematic cross-sectional view showing a state in which a temporary fixing material layer is formed on the first surface of the plate component. Figure 3 (b) is a schematic cross-sectional view showing the state in which the first pressure-sensitive adhesive film is attached to the second surface of the board component. Figure 3 (c) is a cross-sectional view schematically showing the state in which the board components and temporary fixing material layers are monolithically divided into multiple semiconductor packages with temporary fixing material sheets.

[0031] Figure 4 middle, Figure 4 (a) is a cross-sectional view schematically showing the state in which the spacing between two adjacent semiconductor packages with temporary fixing material sheets is increased by applying tension to the first pressure-sensitive adhesive film. Figure 4 (b) is a schematic cross-sectional view showing a plurality of semiconductor packages with temporary fixing material sheets attached to a first pressure-sensitive adhesive film under tension. Figure 4 (c) is a schematic representation of from Figure 4(b) is a cross-sectional view schematically showing a state of peeling off the first pressure-sensitive adhesive film.

[0032] Figure 5 is a cross-sectional view schematically showing a state in which an electromagnetic wave shielding layer (functional layer) is formed on the surface of a plurality of semiconductor packages with pieces of temporary fixing material.

[0033] Figure 6 In this embodiment, Figure 6 (a) to Figure 6 (c) is a cross-sectional view schematically showing a process of picking up the semiconductor package. DETAILED DESCRIPTION

[0034] Hereinafter, an embodiment of the present application will be described in detail with reference to the drawings. In the following description, the same or equivalent portions are denoted by the same reference numerals, and repetitive description will be omitted. Also, unless otherwise specified, positional relationships such as up and down, left and right, and the like are based on the positional relationships shown in the drawings. Moreover, the dimensional proportions of the drawings are not limited to the illustrated proportions.

[0035] In the present specification and technical solutions, the terms "left", "right", "front", "back", "up", "down", "upper", "lower", and the like are intended to be illustrative and do not mean that they are always in the relative position. Also, the term "layer" includes not only a structure formed in an entire plane as viewed in plan, but also a structure formed in a partial shape.

[0036] (semiconductor package)

[0037] Figure 1 is a cross-sectional view schematically showing a semiconductor package manufactured by the manufacturing method according to the present embodiment. The semiconductor package 10 shown in the drawing is referred to as a fan-out wafer level package (FO-WLP). The semiconductor package 10 has a semiconductor chip 1, a sealing layer 3, a rewiring layer 4, and an electromagnetic wave shielding layer 5 (functional layer). Note that the package form is not limited to the FO-WLP, and can be a wafer level package (WLP), a flip-chip chip size package (FC-CSP), a flip-chip ball grid array (FC-BGA), a memory package, or the like.

[0038] The shape of the semiconductor package 10 as viewed in plan is, for example, a square or a rectangle. The area of the semiconductor package 10 as viewed in plan is, for example, 1 to 900 mm 2 , 9 to 625 mm 2 , or 25 to 400 mm 2The length of one side of the semiconductor package 10 as viewed from above is, for example, 1 to 30 mm, and can also be 3 to 25 mm or 5 to 20 mm. The thickness of the semiconductor package 10 (excluding the height of the bump 4c) is, for example, 100 to 1500 μm, and can also be 200 to 1000 μm.

[0039] The semiconductor chip 1 has a circuit surface la and a plurality of bumps lb (protruding electrodes) formed on the circuit surface la. The circuit surface la can have a relatively flat metal pad such as a Ni / Au-plated pad. The bumps lb are, for example, copper bumps and solder bumps. The shape of the semiconductor chip 1 as viewed from above is, for example, a square or a rectangle. The area of the semiconductor chip 1 as viewed from above is, for example, 1 to 400 mm 2 , and can also be 9 to 225 mm 2 or 25 to 100 mm 2 The length of one side of the semiconductor chip 1 as viewed from above is, for example, 1 to 20 mm, and can also be 3 to 15 mm or 5 to 10 mm. The thickness of the semiconductor chip 1 (excluding the height of the bump lb) is, for example, 50 to 775 μm, and can also be 100 to 500 μm.

[0040] The sealing layer 3 is composed of a thermosetting resin composition. The sealing layer 3 protects the semiconductor chip 1 from light, heat, moisture, dust, physical impact, and the like. The sealing layer 3 is formed, for example, by a compression molding mold, a transfer molding mold, or a laminate of a film-like sealing material. The thickness of the sealing layer 3 is, for example, 50 μm or more, and can also be 100 μm or more.

[0041] The rewiring layer 4 is electrically connected to the bumps lb of the semiconductor chip 1. The rewiring layer 4 is composed of a conductor portion 4a, an insulating portion 4b, and bumps 4c and 4d. The conductor portion 4a electrically connects the bumps lb of the semiconductor chip 1 to the bump 4c. Figure 1 The bump 4d shown at the left end is electrically connected to the electromagnetic wave shielding layer 5. The side surface 4f of the rewiring layer 4 has a ground point 4g. The ground point 4g is in contact with the electromagnetic wave shielding layer 5. Thus, the electromagnetic wave shielding layer 5 can be grounded. In addition, Figure 1 One ground point 4g is shown, but the semiconductor package 10 can have a plurality of ground points on the side surface 4f of the rewiring layer 4.

[0042] The electromagnetic wave shielding layer 5 covers the surface 3a and the side surface 3b of the sealing layer 3, and covers at least a part of the side surface 4f of the rewiring layer 4. The electromagnetic wave shielding layer 5 is, for example, a metal layer formed by sputtering or evaporation. The electromagnetic wave shielding layer 5 contains, for example, a metal element such as copper, chromium, nickel, or the like. The metal element constituting the electromagnetic wave shielding layer 5 can be one kind or two or more kinds. The thickness of the electromagnetic wave shielding layer 5 is, for example, 0.01 to 100 μm, or 0.05 to 50 μm. Note that the method of forming the electromagnetic wave shielding layer 5 is not limited to sputtering or evaporation, and can be, for example, a screen printing method, a jet printing method, an electroless plating method, or an electrolytic plating method.

[0043] (Method for manufacturing semiconductor package)

[0044] Next, a method for manufacturing the semiconductor package 10 will be described. The semiconductor package 10 can be manufactured, for example, by the following steps.

[0045] (a) a step of forming a temporary fixing material layer 15 on a first surface 30a of a board member 30 provided with a plurality of semiconductor packages 10A (see Figure 3 (a)).

[0046] (b) a step of adhering a pressure-sensitive adhesive film 21 (first pressure-sensitive adhesive film) to a second surface 30b of the board member 30 (see Figure 3 (b)).

[0047] (c) a step of singulating the board member 30 and the temporary fixing material layer 15 on the pressure-sensitive adhesive film 21 into a plurality of temporary fixing material sheet-equipped semiconductor packages 25P (see Figure 3 (c)).

[0048] (d) a step of arranging a plurality of temporary fixing material sheet-equipped semiconductor packages 25P on a support carrier 35 in such a manner that the interval between the temporary fixing material sheet 15P of the temporary fixing material sheet-equipped semiconductor package 25P and the adjacent temporary fixing material sheet-equipped semiconductor package 25P becomes 0.1 mm or more (see Figure 4 (b)).

[0049] (e) a step of peeling the pressure-sensitive adhesive film 21 from the support carrier 35 and the plurality of temporary fixing material sheet-equipped semiconductor packages 25P (see Figure 4 (c)).

[0050] (f) a step of forming an electromagnetic wave shielding layer 5 by sputtering or evaporation on the surfaces of the plurality of temporary fixing material sheet-equipped semiconductor packages 25P exposed by the peeling of the pressure-sensitive adhesive film 21 (see Figure 5 ).

[0051] According to the manufacturing method described above, the following effects can be achieved.

[0052] • In the process (d), the plurality of semiconductor packages 25P with the temporary fixing material sheet are arranged on the support carrier 35 in a state where the interval between the adjacent two semiconductor packages 25P with the temporary fixing material sheet is expanded, and thus in the process (f), the electromagnetic wave shielding layer 5 of the desired thickness can be formed on the side surface of the semiconductor package 10P by sputtering or evaporation. In addition, the semiconductor package 25P with the temporary fixing material sheet is composed of the semiconductor package 10P (before the formation of the electromagnetic wave shielding layer 5) and the temporary fixing material sheet 15P.

[0053] • In the process (f), since the electromagnetic wave shielding layer 5 is formed on the semiconductor package 10P in which the rewiring layer 4 is covered with the temporary fixing material sheet 15P, the material constituting the electromagnetic wave shielding layer 5 can be prevented from being rolled into the side of the rewiring layer 4 of the semiconductor package 10.

[0054] In addition, the first surface 30a of the board member 30 is a surface on which the rewiring layer 4 is exposed. The rewiring layer 4 can be said to belong to the semiconductor package 10A or the board member 30, and after the semiconductor package 10P or the semiconductor package 10 is formed, it can be said to belong to the semiconductor package 10P or the semiconductor package 10. In addition, on the first surface 30a of the board member 30, a part of the circuit surface la of the semiconductor chip 1 can be exposed.

[0055] [(a) process]

[0056] The process (a) is a process of forming a temporary fixing material layer 15 on the first surface 30a of the board member 30 provided with a plurality of semiconductor chips 1 and a sealing material 13 that seals the plurality of semiconductor chips 1. In the present embodiment, an example in which a fan-out wafer level package (FO-WLP) is used as the board member 30 is described. Figure 2 is a schematic plan view of the FO-WLP, that is, the board member 30. The board member 30 is substantially circular in plan view, and has a diameter of, for example, 100 to 300 mm. The board member 30 is composed of a plurality of semiconductor chips 1 and a sealing material 13 that seals the semiconductor chips 1. In addition, in Figure 2 In the drawing, 21 semiconductor chips 1 are shown for convenience, but the number of semiconductor chips 1 provided in the FO-WLP is, for example, 100 or more, and can be 400 to 6000 or 1600 to 24000.

[0057] Figure 3(a) is a cross-sectional view schematically showing a state in which the temporary fixing material layer 15 is formed on the first surface 30a of the board member 30. The temporary fixing material layer 15 is composed of a resin composition having adhesion to the board member 30. In addition, the temporary fixing material layer 15 can be formed using a paste of the relevant resin composition, or the resin composition can be formed into a film in advance and attached to the first surface 30a. As shown in (a), it is preferable to set the state in which the temporary fixing material layer 15 is in contact with the circuit surface la of the board member 30 and the bump lb is buried in the temporary fixing material layer 15. By the adhesion of the temporary fixing material layer 15 to the circuit surface la, even if the electromagnetic wave shielding layer 5 is formed in the (F) process, it is possible to highly suppress the material constituting the electromagnetic wave shielding layer 5 from being caught in the circuit surface la. Figure 3 (a) shown, it is preferable to set the state in which the temporary fixing material layer 15 is in contact with the circuit surface la of the board member 30 and the bump lb is buried in the temporary fixing material layer 15. By the adhesion of the temporary fixing material layer 15 to the circuit surface la, even if the electromagnetic wave shielding layer 5 is formed in the (F) process, it is possible to highly suppress the material constituting the electromagnetic wave shielding layer 5 from being caught in the circuit surface la.

[0058] [(b) process]

[0059] The (b) process is a process of adhering the pressure-sensitive adhesive film 21 (first pressure-sensitive adhesive film) to the second surface 30b of the board member 30 (refer to FIG. 2 (b)). Figure 3 The pressure-sensitive adhesive film 21 has a base film 21a and a pressure-sensitive adhesive layer 21b. The pressure-sensitive adhesive film 21 is preferably an extensible film. As the extensible film, for example, an inflation film used in stealth cutting or the like can be used. The pressure-sensitive adhesive film 21 is used for singulation of the board member 30 in the (c) process and for expansion of the interval between the adjacent temporary fixing material piece-equipped semiconductor packages 25P in the (d) process. The interval after the expansion does not necessarily need to be uniform as a whole as long as the electromagnetic wave shielding layer 5 can be appropriately formed on the side surface of the semiconductor package 10P in the (f) process. Therefore, as the pressure-sensitive adhesive film 21, an extensible pressure-sensitive adhesive film (for example, a cutting film) having a certain degree of extensibility can be used instead of the inflation film.

[0060] [(c) process]

[0061] The (c) process is a process of singulating the board member 30 and the temporary fixing material layer 15 on the pressure-sensitive adhesive film 21 into a plurality of temporary fixing material piece-equipped semiconductor packages 25P (refer to FIG. 2 (c)). Figure 3 The separation distance between the adjacent two temporary fixing material piece-equipped semiconductor packages 25P is substantially the same as the blade width for cutting, and is, for example, about 50 pm.

[0062] [(d) process]

[0063] (d) The (d) process is a process of arranging a plurality of the temporary fixing material sheet-attached semiconductor packages 25P on the support carrier 35 in a manner that the temporary fixing material sheet 15P of the temporary fixing material sheet-attached semiconductor package 25P is in contact with the support carrier 35 and the interval between the adjacent temporary fixing material sheet-attached semiconductor packages 25P is 0.1 mm or more. In the (d) process, for example, by performing the following steps, the plurality of the temporary fixing material sheet-attached semiconductor packages 25P on the pressure-sensitive adhesive film 21 can be arranged on the support carrier 35.

[0064] (d1) The interval between the adjacent two temporary fixing material sheet-attached semiconductor packages 25P is expanded by applying tension to the pressure-sensitive adhesive film 21 (refer to Figure 4 (a)).

[0065] (d2) The plurality of the temporary fixing material sheet-attached semiconductor packages 25P on the pressure-sensitive adhesive film 21 is transferred to the support carrier 35 in a state where tension is applied to the pressure-sensitive adhesive film 21.

[0066] The support carrier 35 is composed of a material having sufficient heat resistance due to exposure to sputtering or vapor deposition in the (f) process. The support carrier 35 has, for example, a laminated structure including a base material film 35a having heat resistance and a pressure-sensitive adhesive layer 35b having high adhesion to the temporary fixing material sheet 15P. As described above, the base material film 35a can be, for example, a polyimide film, a PET film (stretch), polyvinylidene chloride, or the like, as long as it has heat resistance. The base material film 35a can be a single layer film or a multi-layer film obtained by combining two or more of the above-described plastic films or combining two or more of the same kind of plastic films. The pressure-sensitive adhesive layer 35b is composed of, for example, an adhesive composition and can exhibit strong tightness to the temporary fixing material sheet 15P by heating.

[0067] The expanded separation distance of the adjacent two temporary fixing material sheet-attached semiconductor packages 25P is preferably 100 to 2000 μm, and more preferably 200 to 800 μm. By the distance being 2000 μm or less, it is possible to easily suppress the breakage of the temporary fixing material layer 15. The ratio (D / T) of the distance D to the thickness T of the semiconductor package is preferably 1 or more. Since the ratio D / T is 1 or more, by sputtering or vapor deposition in the (E) process, it is possible to stably form an electromagnetic wave shielding layer 5 of a desired thickness on the side surface of the semiconductor package 10P.

[0068] [(e) Process]

[0069] The (e) process is a process of peeling the pressure-sensitive adhesive film 21 from the support carrier 35 and the plurality of the temporary fixing material sheet-attached semiconductor packages 25P. Figure 4 (c) is schematically shown as a process of arranging the plurality of the temporary fixing material sheet-attached semiconductor packages 25P on the support carrier 35 in a manner that the temporary fixing material sheet 15P of the temporary fixing material sheet-attached semiconductor package 25P is in contact with the support carrier 35 and the interval between the adjacent temporary fixing material sheet-attached semiconductor packages 25P is 0.1 mm or more. Figure 4(b) is a cross-sectional view schematically showing a state of the pressure-sensitive adhesive film 21. In addition, Figure 4 (c) is a cross-sectional view schematically showing a state of the pressure-sensitive adhesive film 21. In addition, Figure 4 (b) is a cross-sectional view schematically showing a state of the pressure-sensitive adhesive film 21. In addition,

[0070] [(f) Process]

[0071] The (f) process is a process of forming the electromagnetic wave shielding layer 5 on the surfaces of the plurality of semiconductor packages 25P with the temporary fixing material pieces by sputtering or vapor deposition. For example, sputtering can be performed using CCS-2110 (trade name) manufactured by SHIBAURA MECHATRONICS CORPORATION. For example, vapor deposition can be performed using AIP-G series (trade name, "AIP" is a registered trademark) manufactured by Kobe Steel, Ltd. (KOBELCO). Figure 5 (b) is a cross-sectional view schematically showing a state of the pressure-sensitive adhesive film 21. In addition,

[0072] After the (f) process, the plurality of semiconductor packages 25P with the temporary fixing material pieces can be transferred from the support carrier 35 to the pressure-sensitive adhesive film 22 (second pressure-sensitive adhesive film), and the semiconductor packages 10 can be picked up from the pressure-sensitive adhesive film 22, to pick up the semiconductor packages 10 efficiently. That is, after the (f) process, the following processes can be appropriately performed. In addition, as the pressure-sensitive adhesive film 22, for example, a film whose adhesion is reduced by ultraviolet irradiation or heating can be used.

[0073] (g) is a process of attaching the pressure-sensitive adhesive film 22 so as to cover the electromagnetic wave shielding layer 5 of the plurality of semiconductor packages 25P with the temporary fixing material pieces after the (f) process (refer to Figure 6 (a)).

[0074] (h) is a process of peeling the temporary fixing material pieces 15P together with the support carrier 35 from the plurality of semiconductor packages 10 on the pressure-sensitive adhesive film 22 (refer to Figure 6 (b)).

[0075] (i) is a process of reducing the adhesion of the pressure-sensitive adhesive film 22 to the semiconductor packages 10. (j) is a process of picking up the semiconductor packages 10 from the pressure-sensitive adhesive film 22.

[0076] Figure 6 (c) is a cross-sectional view schematically showing a state of the pressure-sensitive adhesive film 21. In addition, Figure 6(c) shown, the semiconductor package 10 is pushed up from the lower side of the pressure-sensitive adhesive film 22 with the push-up jig 51, and the semiconductor package 10 is picked up by suction with the collet 52.

[0077] The above describes embodiments of the present application, but the present application is not limited to the above-described embodiments. For example, in the above-described embodiments, the case where the electromagnetic wave shielding layer 5 is formed as the functional layer is exemplified, but instead of the electromagnetic wave shielding layer 5, a heat dissipation layer and / or a protective layer can be formed on the surface of the semiconductor package 10P. Also, in the above-described embodiments, the case where the pressure-sensitive adhesive film 21 having extensibility is used in the (c) process and the plurality of semiconductor packages 25P with the temporary fixing material sheet are collectively transferred to the support carrier 35 in the (d) process is exemplified, but instead of the semiconductor packages 25P with the temporary fixing material sheet, a cut film having no extensibility or low extensibility can be used in the (c) process, and the semiconductor packages 25P with the temporary fixing material sheet after cutting can be picked up one by one and disposed on the support carrier 35.

[0078] According to the present embodiment, even if the rewiring layer 4 of the semiconductor package 10 is as thin as less than 50 μm, the effect of stably achieving grounding of the electromagnetic wave shielding layer 5 can be obtained. That is, in the (f) process, the electromagnetic wave shielding layer 5 can be stably formed on the side surface of the rewiring layer 41, and the grounding point 42 can be provided on the side surface 41f of the rewiring layer 41. The thickness of the rewiring layer 41 can be less than 50 μm, or less than 30 μm. The lower limit of the thickness of the rewiring layer 41 is, for example, about 10 μm.

[0079] Example

[0080] The present application will be described in further detail by examples below, but the present application is not limited to these examples.

[0081] A board member for WLP (diameter: 24 mm, thickness: 0.3 mm, number of semiconductor chips: 16, bump on circuit surface: solder) was prepared. A temporary fixing film having a pressure-sensitive adhesive layer was attached to the first surface (circuit surface) of the board member for WLP ((A) process). An extensible film (cut film having extensibility, first pressure-sensitive adhesive film) was attached to the second surface (surface on the opposite side of the circuit surface) of the board member for WLP ((B) process). A plurality of semiconductor packages with temporary fixing material sheets (size of 6 mm x 6 mm in plan view) were formed on the extensible film by performing blade cutting under the following conditions ((C) process).

[0082] • Cutter: DFD3361 (manufactured by Disco Corporation)

[0083] • Blade: ZH05-SD3000-N1-70 (manufactured by Disco Corporation)

[0084] • Blade width: 28 μm

[0085] • Blade rotation speed: 30000 rpm

[0086] • Cutting speed: 10 mm / sec

[0087] A tension was applied to the extensible film by abutting a ring having a larger inner diameter than the diameter of the plate member for WLP from below the extensible film ((d1) step). Thereby, the interval of the two semiconductor packages each having a piece of temporary fixing material was expanded to about 320 μm. In a state where the tension was applied to the extensible film, a support carrier was attached with a vacuum laminator in a manner to cover the pieces of temporary fixing material, and the semiconductor packages each having a piece of temporary fixing material were transferred to the support carrier ((d1) step). As the support carrier, a polyimide film having a layer of ultraviolet-cured pressure-sensitive adhesive on the surface was used. Thereafter, the extensible film was peeled from the semiconductor packages each having a piece of temporary fixing material ((E) process).

[0088] An electromagnetic wave shielding layer (thickness: 4380 nm) was formed on the surfaces of the semiconductor packages each having a piece of temporary fixing material on the polyimide film by sputtering ((F) process). As the target material, chromium and copper were used.

[0089] As a result of observing the circuit surface of the semiconductor package enlarged, no material constituting the electromagnetic wave shielding layer was found to be wound to the circuit surface.

[0090] Industrial applicability

[0091] According to the present application, there is provided a method of efficiently manufacturing a semiconductor package in which at least a part of the surface is covered with a functional layer.

[0092] Explanation of symbols

[0093] 1 - semiconductor chip, 1a - circuit surface, 1b - bump, 3 - sealing layer, 3a - surface, 3b - side surface, 4 - rewiring layer, 4a - conductor portion, 4b - insulating portion, 4c, 4d - bump, 4f - side surface, 4g - ground point, 5 - electromagnetic wave shielding layer (functional layer), 10 - semiconductor package, 10A - semiconductor package (before singulation), 10P - semiconductor package (before functional layer formation), 13 - sealing material, 15 - temporary fixing material layer, 15P - temporary fixing material sheet, 21 - pressure-sensitive adhesive film (first pressure-sensitive adhesive film), 21a - base material film, 21b - pressure-sensitive adhesive layer, 22 - pressure-sensitive adhesive film (second pressure-sensitive adhesive film), 25P - semiconductor package, 30 - board member, 30a - first surface, 30b - second surface, 35 - support carrier, 35a - base material film, 35b - pressure-sensitive adhesive layer, 51 - jig, 52 - collet.

Claims

1. A method for manufacturing semiconductor packages, comprising: (A) a step of forming a temporary fixing material layer on a first surface of a board member having a plurality of semiconductor packages and exposing a circuit surface or a rewiring layer of the plurality of semiconductor packages; (B) a step of adhering a first pressure-sensitive adhesive film to a second surface of the board member; (C) a step of singulating the board member and the temporary fixing material layer on the first pressure-sensitive adhesive film into a plurality of semiconductor packages with temporary fixing material pieces; (D) a step of arranging a plurality of the semiconductor packages with temporary fixing material pieces on a support carrier in such a manner that the interval between the semiconductor packages with temporary fixing material pieces adjacent to each other becomes 0.1 mm or more with the temporary fixing material pieces of the semiconductor packages with temporary fixing material pieces in contact with the support carrier; (E) a step of peeling the first pressure-sensitive adhesive film from the support carrier and the plurality of semiconductor packages with temporary fixing material pieces; (F) a step of forming a functional layer on the surface of the plurality of semiconductor packages with temporary fixing material pieces exposed by peeling the first pressure-sensitive adhesive film; (G) a step of adhering a second pressure-sensitive adhesive film in such a manner as to cover the functional layer formed on the surface of the plurality of semiconductor packages with temporary fixing material pieces; and (H) a step of peeling the semiconductor packages with temporary fixing material pieces together with the support carrier from the plurality of semiconductor packages on the second pressure-sensitive adhesive film.

2. The method for manufacturing semiconductor packages according to claim 1, wherein: the first pressure-sensitive adhesive film has extensibility, the step (D) includes steps of (dl) expanding the interval between two semiconductor packages with temporary fixing material pieces adjacent to each other by applying tension to the first pressure-sensitive adhesive film; and (d2) transferring the plurality of semiconductor packages with temporary fixing material pieces on the first pressure-sensitive adhesive film to the support carrier in a state where tension is applied to the first pressure-sensitive adhesive film.

3. The method of manufacturing a semiconductor package according to claim 2, wherein, The expanded separation distance between two semiconductor packages with temporary fixing material pieces adjacent to each other is 200 to 800 μm.

4. The method of manufacturing a semiconductor package according to claim 2, wherein, The ratio D / T of the expanded separation distance D between two semiconductor packages with temporary fixing material pieces adjacent to each other to the thickness T of the semiconductor package is 1 or more.

5. The method for manufacturing semiconductor packages according to any one of claims 1 to 4, wherein: the functional layer is a metal layer formed by sputtering or evaporation.

6. The method for manufacturing semiconductor packages according to any one of claims 1 to 4, wherein: the functional layer is an electromagnetic wave shielding layer.

7. The method for manufacturing semiconductor packages according to claim 6, wherein: the semiconductor package has a rewiring layer with a thickness of less than 50 μm and a ground point provided on the side surface of the rewiring layer.

8. The method of manufacturing a semiconductor package according to any one of claims 1 to 4, wherein, the functional layer is a heat dissipation layer.

9. The method of manufacturing a semiconductor package according to any one of claims 1 to 4, wherein, the board member is a fan-out wafer level package.

10. The method of manufacturing a semiconductor package according to any one of claims 1 to 4, wherein, the board member has 1600 to 24000 semiconductor chips.

11. The method of manufacturing a semiconductor package according to any one of claims 1 to 4, wherein the plurality of semiconductor packages provided to the board member each have a plurality of bumps formed on the circuit surface, in the (A) process, the temporary fixing material layer is formed on the first surface in a manner so as to be in contact with the circuit surface and to be buried in the plurality of bumps.

12. The method of manufacturing a semiconductor package according to any one of claims 1 to 4, wherein, The first pressure-sensitive adhesive film is an expansion film used in stealth dicing.

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