Wafer needle prodding test method and system

Abstract

The application discloses a wafer needle pressure test method and system, the wafer needle pressure test method comprises the following steps: obtaining preset needle pressure test parameters to control the probe and the wafer under test to carry out needle pressure test; when the probe and the wafer under test are in contact, the current needle pressure data of the probe and the wafer under test is obtained, and it is judged whether the current needle pressure data is within the first preset threshold range; in response, the contact trace is obtained, the needle mark data is obtained based on the contact trace, and it is judged whether the needle mark data is within the second preset threshold range; wherein the contact trace is the contact trace left on the wafer under test when the probe and the wafer under test are in contact; in response, the current needle pressure data and the needle mark data are stored. The application realizes real-time regulation and control of needle pressure test by obtaining the current needle pressure data of the probe and the wafer under test when the probe and the wafer under test are in contact, and judging whether the current needle pressure data is within the first preset threshold range.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of wafer needle pressure testing, in particular to a wafer needle pressure testing method and system. BACKGROUND

[0002] In wafer testing, the contact condition of the wafer and the probe card directly affects the test result and the wafer yield, and the parameter reflecting the contact condition of the wafer and the probe card is called needle pressure. If the needle pressure is not enough, the test result is not reliable and the wafer yield is abnormal; if the needle pressure is too large, there is a risk of damage to the probe and the chip pin, therefore, the selection of appropriate needle pressure is particularly important in wafer testing.

[0003] In traditional wafer testing, a fixed needle pressure is usually set before wafer testing, and a plurality of test items included in wafer testing are completed according to the fixed needle pressure, and when wafer testing is completed, if it is found that the test data is abnormal, the needle pressure is adjusted. Since the traditional wafer testing uses a fixed needle pressure to test a plurality of test items included in wafer testing for the same wafer, if the test of one test item is abnormal, the tests of the test items related to it may also be abnormal, and the needle pressure is not adjusted when different test items are tested, therefore, the traditional wafer testing cannot monitor whether the wafer testing is abnormal in real time, and cannot adjust the needle pressure in real time according to whether the test data is abnormal. SUMMARY

[0004] The present application at least provides a wafer needle pressure testing method and system to solve the problem that the wafer testing cannot be monitored in real time whether it is abnormal, and the needle pressure cannot be adjusted in real time.

[0005] The first aspect of the present application provides a wafer needle pressure testing method, which comprises:

[0006] acquiring a preset needle pressure test parameter to control the probe and the wafer to be tested to perform needle pressure testing;

[0007] acquiring current needle pressure data of the probe and the wafer to be tested when the probe and the wafer to be tested are in contact, and determining whether the current needle pressure data is within a first preset threshold range;

[0008] in response to yes, acquiring a contact trace, obtaining needle mark data based on the contact trace, and determining whether the needle mark data is within a second preset threshold range; wherein the contact trace is a contact trace left on the wafer to be tested when the probe and the wafer to be tested are in contact;

[0009] in response to yes, storing the current needle pressure data and the needle mark data.

[0010] Optionally, the step of determining whether the current needle pressure data is within the first preset threshold range comprises:

[0011] In response to judging that the current needle pressure data is not within the first preset threshold range, the probe and the wafer under test are controlled to stop the needle pressure test.

[0012] A compensation value is calculated based on the current needle pressure data, and the needle pressure test parameters are adjusted based on the compensation value to obtain new needle pressure test parameters, so that the probe and the wafer under test are controlled to perform the needle pressure test based on the new needle pressure test parameters.

[0013] Optionally, the step of calculating the compensation value based on the current needle pressure data and adjusting the needle pressure test parameters based on the compensation value comprises:

[0014] A preset data classification table is obtained, the data classification table comprising a plurality of continuous needle pressure ranges and parameter levels corresponding to the needle pressure ranges;

[0015] The current needle pressure data is matched with the data classification table to obtain a parameter level corresponding to the current needle pressure data, so as to obtain a standard adjustment value corresponding to the parameter level;

[0016] The standard adjustment value is set as the compensation value, and the needle pressure test parameters are adjusted based on the compensation value.

[0017] Optionally, the step of calculating the compensation value based on the current needle pressure data and adjusting the needle pressure test parameters based on the compensation value comprises:

[0018] A preset data classification table is obtained, the data classification table comprising a plurality of continuous needle pressure ranges and parameter levels corresponding to the needle pressure ranges;

[0019] The current needle pressure data is matched with the data classification table to obtain a parameter level corresponding to the current needle pressure data, so as to obtain a standard adjustment value corresponding to the parameter level;

[0020] A first difference value between the current needle pressure data and a minimum value of a corresponding needle pressure range, a second difference value between a maximum value and the minimum value of the needle pressure range, and a ratio of the first difference value to the second difference value are calculated;

[0021] The standard adjustment value is multiplied by the ratio to obtain the compensation value, and the needle pressure test parameters are adjusted based on the compensation value.

[0022] Optionally, the step of judging whether the needle mark data is within the second preset threshold range comprises:

[0023] In response to judging that the needle mark data is not within the second preset threshold range, the probe and the wafer under test are controlled to stop the needle pressure test;

[0024] A difference value between the needle mark data and the second preset threshold range is calculated;

[0025] The needle pressure test parameters are adjusted based on the difference value to obtain new needle pressure test parameters, so that the probe and the wafer under test are controlled to perform needle pressure test based on the new needle pressure test parameters.

[0026] Optionally, the step of obtaining the contact trace and obtaining the needle mark data based on the contact trace comprises:

[0027] The wafer under test is controlled to move to an initial position to expose the contact trace of the wafer under test.

[0028] The shooting angle is adjusted to a preset shooting angle.

[0029] An image of the contact trace is obtained at the preset shooting angle.

[0030] The needle mark data is extracted based on the image; wherein the extracted needle mark data comprises length, width, depth and distance from the center of the metal pin of the wafer under test.

[0031] Optionally, the method further comprises:

[0032] A test image is generated based on the current needle pressure data.

[0033] A test chart is generated based on the needle mark data.

[0034] The test image and the test chart are output.

[0035] The second aspect of the present application provides a wafer needle pressure test system, comprising:

[0036] A test device comprising a probe, configured to perform needle pressure test on a wafer under test;

[0037] A collection device configured to obtain current needle pressure data of the probe and the wafer under test, obtain a contact trace, and obtain needle mark data based on the contact trace; wherein the contact trace is a contact trace left on the wafer under test when the probe contacts the wafer under test.

[0038] An analysis and judgment device connected to the collection device, configured to judge whether the current needle pressure data is within a first preset threshold range, and further configured to judge whether the needle mark data is within a second preset threshold range.

[0039] An adjustment device connected to the analysis and judgment device and the collection device, configured to calculate a compensation value based on the current needle pressure data, and adjust the needle pressure test parameters based on the compensation value to obtain new needle pressure test parameters.

[0040] A storage device connected to the adjustment device, configured to store the current needle pressure data, the needle mark data and the preset needle pressure test parameters.

[0041] Optionally, the wafer needle pressure test system further comprises:

[0042] a screen output device connected to the collecting device, configured to generate a test image and / or a test chart according to the current needle pressure data and / or the needle mark data and output;

[0043] a mail triggering device connected to the analysis and judgment device, configured to arrange the test data into a mail and send it to the mailbox of the relevant test personnel according to the judgment result of the analysis and judgment device.

[0044] Optionally, the collecting device comprises a first collecting device and a second collecting device, the first collecting device is configured to acquire the needle pressure data and generate a test image according to the needle pressure data;

[0045] the second collecting device is configured to acquire the needle mark data and generate a test chart according to the needle mark data;

[0046] the screen output device comprises a first output device and a second output device, the first output device is connected to the first collecting device and configured to output the test image, and the second output device is connected to the second collecting device and configured to output the test chart.

[0047] The beneficial effects of the present application are as follows: Different from the prior art, the present application is provided with a first preset threshold range and an adjustment parameter value corresponding to the first preset threshold range, whether the test data is abnormal can be judged by judging whether the value of the test data is located in the first preset threshold range, and the parameter value of the needle pressure test is further adjusted according to the adjustment parameter value corresponding to the first preset threshold range, so as to realize the real-time regulation and control of the needle pressure test.

[0048] It should be understood that the above general description and the following detailed description are only exemplary and explanatory, but not limiting the present application. BRIEF DESCRIPTION OF DRAWINGS

[0049] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed in the embodiment description will be briefly introduced. Obviously, the drawings in the following description are only some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative labor.

[0050] Figure 1 is a flowchart of an embodiment of the wafer needle pressure test method of the present application;

[0051] Figure 2 is Figure 1 a specific flowchart of an embodiment of step S12 in

[0052] Figure 3 is Figure 2 a specific flowchart of the first embodiment of step S122 in

[0053] Figure 4 is Figure 2 is a specific flowchart of the second embodiment of step S122 in

[0054] Figure 5 is Figure 1 is a specific flowchart of the first embodiment of step S13 in

[0055] Figure 6 is Figure 1 is a specific flowchart of the second embodiment of step S13 in

[0056] Figure 7 is a flowchart of another embodiment of the wafer needle pressure test method of the present application;

[0057] Figure 8 is a structural schematic diagram of an embodiment of the wafer needle pressure test system of the present application;

[0058] Figure 9 is Figure 8 is a structural schematic diagram of the carrier table, the probe, and the second collecting device;

[0059] Figure 10 is an output result schematic diagram of the screen output device of the present application. DETAILED DESCRIPTION

[0060] In order for those skilled in the art to better understand the technical solutions of the present application, the wafer needle pressure test method and system provided by the present application are further described in detail below in combination with the drawings and specific embodiments. It can be understood that the described embodiments are only a part of the embodiments of the present application, not all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative labor fall within the scope of protection of the present application.

[0061] The terms "first", "second", and the like in the present application are used to distinguish different objects, not to describe a specific order. In addition, the terms "include" and "have" and any variations thereof are intended to cover non-exclusive inclusion. For example, a process, method, system, product, or device that includes a series of steps or units is not limited to the listed steps or units, but can optionally include steps or units not listed, or can optionally include other steps or units inherent to the process, method, product, or device.

[0062] The present application provides a wafer test method to solve the problem that the wafer test cannot be monitored in real time whether it is abnormal, and the test needle pressure cannot be adjusted in real time. Please refer to Figure 1 , Figure 1 is a flowchart of an embodiment of the wafer test method of the present application.

[0063] The execution subject of the wafer testing method of the present application can be a wafer testing system, which can be specifically as shown in Figure 8 and Figure 9 . Please refer to Figure 8 and Figure 9 , Figure 8 is a structural schematic diagram of an embodiment of the wafer testing system of the present application, Figure 9 is Figure 8 a structural schematic diagram of the carrying table, the probe and the second collecting device in

[0064] As shown in Figure 7 , the wafer needle pressure testing system 70 comprises a testing device 71, a collecting device 72, an analysis and judgment device 73, an adjusting device 74, a storage device 75, a mail triggering device 76 and a screen output device 77.

[0065] Among them, the collecting device 72 is connected to the testing device 71, the analysis and judgment device 73 is connected to the collecting device 72, the adjusting device 74 is connected to the analysis and judgment device 73, the storage device 75 is connected to the adjusting device 74, the screen output device 77 is connected to the collecting device 72, and the mail triggering device 76 is connected to the analysis and judgment device 73.

[0066] Specifically, as shown in Figure 9 , the testing device 71 comprises a carrying table 711 and a probe 712, the carrying table 711 is used for setting a wafer to be tested 80, and the wafer to be tested 80 is controlled to contact the needle tip of the probe 712 by controlling the movement of the carrying table 711, and the probe 712 is used for needle pressure testing of the wafer to be tested 80.

[0067] Optionally, the carrying table 711 can move along a first direction, a second direction or a third direction, the first direction is perpendicular to the second direction and the third direction, and the second direction and the third direction are perpendicular. Among them, the first direction and the second direction are two directions parallel to the plane on which the wafer to be tested 80 is arranged on the carrying table 711, which are also the X direction and the Y direction in the ground coordinate system; the third direction is the direction perpendicular to the carrying table 711, which is also the Z direction in the ground coordinate system.

[0068] The collecting device 72 is used for collecting the test data obtained by the needle pressure testing of the wafer to be tested 80, and extracting the numerical value of the test data and transmitting it to the analysis and judgment device 73. Among them, the test data includes the current needle pressure data of the probe 712 and the wafer to be tested 80, and the contact trace, which is the contact trace left on the wafer to be tested 80 when the probe 712 contacts the wafer to be tested 80. The screen output device 77 obtains the test data collected by the collecting device 72, generates a test image and / or a test chart according to the test data and outputs.

[0069] The collection device 72 includes a first collection device 721 and a second collection device 722. The first collection device 721 is used to acquire current needle pressure data and generate a test image based on the current needle pressure data. The second collection device 722 is used to acquire contact marks and obtain needle mark data based on the contact marks, and generate a test chart based on the needle mark data. Optionally, in this embodiment, the first collection device 721 can be a probe station, used to receive the electrical signal generated by the contact between the tip of the probe 712 and the wafer 80 under test.

[0070] like Figure 8 As shown, the second collecting device 722 is disposed on the side of the support stage 711 where the wafer 80 to be tested is placed. Optionally, in this embodiment, the second collecting device 722 can be a camera. After each needle pressure test is completed, the support stage 711 returns to its initial position, the second collecting device 722 is activated, automatically finds the optimal shooting position, and automatically completes focusing, magnification, and photographing to obtain a needle mark image.

[0071] The screen output device 77 includes a first output device 771 and a second output device 772. The first output device 771 is connected to the first collection device 721 and is used to output the test image generated by the first collection device 721. The second output device 772 is connected to the second collection device 722 and is used to output the test chart generated by the second collection device 722.

[0072] In this embodiment, a first preset threshold range is preset. The analysis and judgment device 73 is used to determine whether the value of the test data is within the first preset threshold range, and when it is determined that the current needle pressure data is not within the first preset threshold range, it is determined that the test data is abnormal.

[0073] The adjustment device 74 acquires the current needle pressure data obtained by the analysis and judgment device 73, calculates a compensation value based on the current needle pressure data, and adjusts the needle pressure test parameters according to the compensation value to obtain new needle pressure test parameters. Optionally, the needle pressure test parameters may include the moving distance of the support platform 711 in the X, Y, and Z directions, that is, the initial coordinate value of the support platform 711 is (0, 0, 0), the target coordinate value is (x, y, z), and the moving distance of the support platform 711 is adjusted by adjusting the x, y, and z values.

[0074] The storage device 75 is used to store needle pressure test parameters, current needle pressure data, and needle mark data. It is also used to store test data obtained by re-performing the needle pressure test on the wafer 80 under test after adjustment by the adjustment device 74.

[0075] The email triggering device 76 is used to organize the test data into an email and send it to the relevant test personnel's mailbox based on the judgment result of the analysis and judgment device 73.

[0076] Specifically, such asFigure 1 As shown, the wafer testing method of the present application can comprise the following steps:

[0077] Step S11: Obtain preset needle pressure testing parameters to control the probe and the wafer under test to perform needle pressure testing.

[0078] In this embodiment, the wafer needle pressure testing system 70 can be pre-set with needle pressure testing parameters, wherein the preset needle pressure testing parameters can be set by a person skilled in the art according to working experience. The wafer needle pressure testing system 70 controls the carrier table 711 to move based on the preset needle pressure testing parameters, controls the probe 712 to contact the wafer under test 80, and controls the probe 712 and the wafer under test 80 to perform needle pressure testing.

[0079] Step S12: Obtain current needle pressure data of the probe and the wafer under test, and determine whether the current needle pressure data is within a first preset threshold range.

[0080] In this embodiment, the first collection device 721 can obtain the current needle pressure data of the probe 712 and the wafer under test 80 in real time when the probe 712 contacts the wafer under test 80. Specifically, the current needle pressure data can be an electrical signal generated by the contact between the probe 712 and the wafer under test 80, including voltage and / or current. Specifically, the first collection device 721 can further extract the numerical value of the current needle pressure data, such as voltage value and / or current value.

[0081] In this embodiment, the wafer needle pressure testing system 70 is pre-set with a first preset threshold range, which can be stored in the analysis and judgment device 73. The analysis and judgment device 73 determines whether the current needle pressure data is within the first preset threshold range to determine whether the current needle pressure testing is abnormal. Alternatively, the first preset threshold range in this embodiment can be (-5mV-10mV).

[0082] In response to determining that the current needle pressure data is not within the first preset threshold range, step 121 is performed. In response to determining that the current needle pressure data is not within the first preset threshold range, step 13 is performed.

[0083] Alternatively, the process of determining whether the current needle pressure data is within the first preset threshold range can be as shown in the flowchart, please continue to refer to Figure 2 , Figure 2 , Figure 2 is Figure 1 a specific flowchart of an embodiment of step S12. Specifically, it comprises the following steps:

[0084] Step S121: Control the probe and the wafer under test to stop needle pressure testing.

[0085] When the analysis and judgment device 73 judges that the current needle pressure data is not within the first preset threshold range, i.e., the analysis processing and judgment device 73 judges that the test is abnormal, the analysis processing and judgment device 73 sends a stop test instruction to the test device 71 to control the test device 71 to stop the current needle pressure test, and then further automatically calculates a compensation value according to the current needle pressure data through the adjustment device 74 to adjust the preset needle pressure test parameters, i.e., step S122 is executed.

[0086] Specifically, the adjustment device 74 adjusts the x, y, z values of the carrier table 711 according to the previous needle pressure data and according to the experience values stored in the storage device 75, and then restarts the wafer test.

[0087] Meanwhile, the analysis processing and judgment device 73 automatically arranges the abnormal test data into a document form and sends it to the mailbox of the relevant test personnel through the mail triggering device 76.

[0088] Step S122: Calculate a compensation value through the current needle pressure data, adjust the needle pressure test parameters based on the compensation value, obtain new needle pressure test parameters, and control the probe and the wafer to be tested to perform needle pressure test based on the new needle pressure test parameters.

[0089] Among them, the adjustment device 74 calculates a compensation value through the current needle pressure data, adjusts the needle pressure test parameters based on the compensation value, obtains new needle pressure test parameters, and transmits the new needle pressure test parameters to the test device 71, so that the test device 71 controls the probe 712 and the wafer 80 to be tested to perform needle pressure test based on the new needle pressure test parameters.

[0090] Optionally, the process of specifically adjusting the needle pressure test parameters can be as shown in the flow Figure 3 Please continue to refer to Figure 3 , Figure 3 is Figure 2 the specific flowchart of the first embodiment of step S122. Specifically, the following steps are included:

[0091] Step S1221: Obtain a preset data classification table.

[0092] Among them, the data classification table includes a plurality of continuous needle pressure ranges and parameter levels corresponding to the needle pressure ranges. Specifically, the data classification table can include 7 parameter levels, which are X, 0, I, II, III, IV and V, the needle pressure range of X is < -5mV, the needle pressure range of 0 is (-5mV, 0mV), the needle pressure range of I is (0mV, 5mV), the needle pressure range of II is (5mV, 10mV), the needle pressure range of III is (10mV, 15mV), the needle pressure range of IV is (15mV, 20mV), and the needle pressure range of V is > 20mV.

[0093] When the current needle pressure data is located in the 0th, 1st, and 2nd levels, it can be known that the needle pressure test of the wafer 80 is normal; when the current needle pressure data is located in the 3rd, 4th, and 5th levels, the wafer 80 may encounter a lower probability of test problems, and when the voltage value is in the interval of (15 mV-20 mV) to ≥20 mV, the probability of the wafer 80 encountering test problems gradually increases.

[0094] Different parameter levels correspond to different needle pressure tolerances, as shown in Table 1.

[0095] Table 1

[0096]

[0097]

[0098] When the current needle pressure data is located in the safe window, it can be known that the probe 712 and the wafer 80 are in good contact, and the voltage and current excitation can be normally mounted. The needle pressure tolerance represents that when the same wafer 80 has a corresponding tolerance ratio of abnormal data, the needle pressure test can still be judged to be normal, and the lower the needle pressure tolerance, the higher the probability of the wafer 80 encountering test problems when the test data corresponds to a higher level.

[0099] Step S1222: Match the current needle pressure data with the data classification table to obtain the parameter level corresponding to the current needle pressure data, so as to obtain the standard adjustment value corresponding to the parameter level.

[0100] Different parameter levels correspond to different standard adjustment values, as shown in Table 2.

[0101] Table 2

[0102]

[0103] Wherein, TGT represents that there is no standard adjustment value, i.e. when the current needle pressure data is located in the 0th, 1st, and 2nd levels, the needle pressure test is normal.

[0104] Specifically, the analysis and judgment device 73 obtains the preset data classification table according to step S1221, and can know the standard adjustment value corresponding to the level by looking up the table, and sets the standard adjustment value as the adjustment parameter value, i.e. adjusts the parameters of the needle pressure test according to the standard adjustment value. Further, the standard adjustment value calibrates the movement distance of the bearing table 711 in the third direction Z, i.e. increases the value of z.

[0105] Step S1223: Set the standard adjustment value as a compensation value, and adjust the needle pressure test parameters based on the compensation value.

[0106] In the embodiment, the standard adjustment value is set as a compensation value, and the probe pressure test parameter is adjusted based on the compensation value. Specifically, when the adjustment device 74 adjusts the positions of the carrier table 711 in the X and Y directions, the carrier table 711 rises in the direction of the probe 712 according to the set Z value, i.e., the original Z value plus the standard adjustment value. When the first probe tip of the probe 712 contacts the surface of the wafer 80 under test, the carrier table 711 slows down to a safe moving speed, i.e., 1 / 10 of the initial speed, and then continues to rise to the preset Z value. At this time, the carrier table 711 stops rising, and the wafer under test resumes wafer testing.

[0107] Optionally, the process of adjusting the probe pressure test parameter can also be as shown in the flowchart, please continue to refer to Figure 4 Figure 4 Figure 4 Figure 2 The second embodiment of step S122 is specifically shown in the flowchart. Specifically, the following steps are included:

[0108] Step S2221: Obtain a preset data classification table.

[0109] The step S2221 is the same as step S1221, and will not be repeated here.

[0110] Step S2222: Match the current probe pressure data with the data classification table to obtain a parameter level corresponding to the current probe pressure data, so as to obtain a standard adjustment value corresponding to the parameter level.

[0111] The step S2222 is the same as step S1222, and will not be repeated here.

[0112] Step S2223: Calculate a first difference value between the current probe pressure data and the minimum value of the corresponding probe pressure range, a second difference value between the maximum value and the minimum value of the probe pressure range, and a ratio of the first difference value to the second difference value.

[0113] In the embodiment, the first difference value between the current probe pressure data and the minimum value of the corresponding probe pressure range is calculated, the second difference value between the maximum value and the minimum value of the probe pressure range is calculated, and then the ratio of the first difference value to the second difference value is calculated.

[0114] Step S2224: Multiply the standard adjustment value by the ratio to obtain a compensation value, and adjust the probe pressure test parameter based on the compensation value.

[0115] The ratio of the first difference value to the second difference value indicates the proportion of the test data in the corresponding first sub-parameter range. The standard adjustment value is allocated according to the proportion, i.e., the standard adjustment value is multiplied by the ratio, and then the compensation value is obtained.

[0116] ​​​Step S13: Obtain the contact trace, obtain the needle mark data based on the contact trace, and determine whether the needle mark data is within a second preset threshold range.

[0117] In this embodiment, the second collecting device 722 obtains the contact trace of the probe 712 on the wafer 80 under test, and obtains the needle mark data based on the contact trace. Specifically, the contact trace is photographed to obtain a needle mark picture, and the needle mark data is obtained by extracting data in the needle mark picture. Specifically, the obtained needle mark data includes length, width, depth, and distance from the center of the metal pin of the wafer 80 under test. Optionally, the needle mark data can also include the metal everted condition.

[0118] Optionally, the process of obtaining the needle mark data can be as shown in the flowchart of Figure 5 , please continue to refer to Figure 5 , Figure 5 is Figure 1 the specific flowchart of step S13 of the first embodiment. Specifically, the following steps are included:

[0119] Step S131: Control the wafer under test to move to an initial position to expose the contact trace of the wafer under test.

[0120] In this embodiment, the wafer needle pressure test system 70 controls the carrier table 711 to move back to the initial position after the wafer under test 80 completes the needle pressure test, i.e., controls the wafer under test 80 to move to the initial position, so that the contact trace generated by the probe 712 on the wafer under test 80 is exposed.

[0121] Step S132: Adjust the shooting angle to a preset shooting angle.

[0122] After the wafer under test 80 is controlled to expose the contact trace, the second collecting device 722 is started and automatically moves to the preset shooting angle. Specifically, the contact trace generated by each needle pressure test is different, and it is necessary to move to the best angle for shooting the complete contact trace after each needle pressure test, so as to shoot a complete image.

[0123] Step S133: Obtain an image of the contact trace at the preset shooting angle.

[0124] The second collecting device 722 automatically completes focusing, zooming, and shooting actions at the preset shooting angle obtained in step S132 to obtain a needle mark picture.

[0125] Step S134: Extract the needle mark data based on the image.

[0126] The second collecting device 722 further processes the shooting image obtained in step S133 to extract the needle mark data in the image.

[0127] Optionally, after the needle mark data is acquired, the second collecting device 722 transmits the needle mark data to the analysis and judgment device 73, and the analysis and judgment device 73 further judges whether the needle mark data is within the second preset threshold range.

[0128] Specifically, when the needle mark data is specifically a length value, the second preset threshold range is specifically ≤10 μm; when the needle mark data is specifically a width value, the second preset threshold range is specifically ≤5 μm; and when the needle mark data is specifically a depth value, the second preset threshold range is specifically (5 μm-20 μm).

[0129] Optionally, in response to judging that the needle mark data is not within the second preset threshold range, step S135 can be executed; and in response to judging that the needle mark data is within the second preset threshold range, step S14 can be executed.

[0130] Optionally, the process of specifically judging whether the needle mark data is within the second preset threshold range can also be as shown in the flowchart of Figure 6 , please continue to refer to Figure 6 , Figure 6 is Figure 1 the specific flowchart of the second embodiment of step S13. Specifically, the following steps are included:

[0131] Step S135: controlling the probe and the wafer under test to stop the needle pressure test.

[0132] In response to the analysis and judgment device 73 judging that the needle mark data is not within the second preset threshold range, i.e., the analysis processing and judgment device 73 judging that the test is abnormal, the analysis processing and judgment device 73 sends a stop test instruction to the test device 71 to control the test device 71 to stop working, and further controls the probe 71 and the wafer under test 80 to stop the needle pressure test.

[0133] Further, the adjustment device 74 adjusts the x, y, z values of the carrier table 711 according to the needle mark data and according to the experience values saved in the storage device 75, and then restarts the wafer test.

[0134] Step S136: calculating the difference between the needle mark data and the second preset threshold range.

[0135] The adjustment device 74 calculates the difference between the needle mark data and the second preset threshold range according to the needle mark data obtained in step S134. For example, the obtained needle mark data is a length value, and specifically 12 μm. At this time, the difference between the needle mark data and the second preset threshold range is 12 μm-10 μm=2 μm.

[0136] Step S137: adjusting the needle pressure test parameters based on the difference value to obtain new needle pressure test parameters, so as to control the probe and the wafer under test to perform needle pressure test based on the new needle pressure test parameters.

[0137] The adjustment device 74 adjusts the needle pressure test parameters based on the difference value obtained in step S136 to obtain new needle pressure test parameters. Specifically, adjusting the needle pressure test parameters means adjusting the x, y, and z values of the carrier table 711. For example, when the difference value is a length value, a width value, and / or a distance from the center of the metal pin of the wafer under test 80, the moving distance of the carrier table 711 in the first direction X and / or the second direction Y can be adjusted, that is, the values of x and / or y are changed; when the difference value is a depth value, the moving distance of the carrier table 711 in the third direction Z can be adjusted, that is, the value of z is changed.

[0138] After the adjustment of the needle pressure test parameters is completed, the wafer needle pressure test system 70 controls the test device 71 to perform needle pressure test with the new needle pressure test parameters, that is, controls the probe 712 and the wafer under test 80 to perform needle pressure test.

[0139] Meanwhile, the analysis processing and judgment device 73 can automatically send the abnormal test data to the mailbox of the relevant test personnel in the form of a manuscript through the email triggering device 76.

[0140] Step S14: storing the current needle pressure data and the needle mark data.

[0141] After the needle pressure test is completed, the storage device 75 can also store the current needle pressure data obtained in step S12 and the needle mark data obtained in step S13.

[0142] Specifically, the optimal needle pressure and needle mark data after the automatic adjustment of the wafer needle pressure test system 70 during the needle pressure test, as well as the product-related information, can be stored in the storage device 75, and the storage device 75 can automatically sort and classify the stored data. The stored data can be used as experience values for adjusting the needle pressure test parameters at any later time.

[0143] Optionally, after the current needle pressure data is obtained by the first collection device 721 and the needle mark data is obtained by the second collection device 722, steps S31-S33 shown in Figure 7 may be performed, please continue to refer to Figure 7 , Figure 7 is a flowchart of another embodiment of the wafer needle pressure test method of the present application. Specifically, the following steps are included:

[0144] Step S31: generating a test image based on the current needle pressure data.

[0145] The first collection device 721 of the embodiment acquires the current needle pressure data, and further generates a test image according to the current needle pressure data, so as to output the test image to the first output device 771. Alternatively, in other embodiments, the first output device 771 can also receive the current needle pressure data output by the first collection device 721, and generate a test image according to the current needle pressure data.

[0146] Step S32: generating a test chart based on the needle mark data.

[0147] The second collection device 722 of the embodiment acquires the needle mark data, and further generates a test chart according to the needle mark data, so as to output the test chart to the second output device 772. Alternatively, in other embodiments, the second output device 772 can also receive the needle mark data output by the second collection device 722, and generate a test chart according to the needle mark data.

[0148] Step S33: outputting the test image and the test chart.

[0149] The first collection device 721 and the second collection device 722 of the embodiment output the test image and the test chart respectively. For details, refer to Figure 10 , Figure 10 is a schematic diagram of the output result of the screen output device of the application.

[0150] As shown in Figure 10 , the first collection device 721 generates a test image 773 of the wafer to be tested 80 according to the current needle pressure data, specifically a wafer map, and labels the parameter level corresponding to the test point on the wafer map, and the second collection device 722 generates a test chart 775 of the wafer to be tested 80 according to the needle mark data, and at the same time, the screen output device 77 also outputs the needle mark picture 774 taken by the second collection device 722.

[0151] The application is provided with a first preset threshold range. By judging whether the current needle pressure data of the probe 712 and the wafer to be tested 80 is located in the first preset threshold range, it can be judged whether the test result of the wafer to be tested 80 is abnormal, and at the same time, the parameter level corresponding to the current needle pressure data and the standard adjustment value are obtained according to the data classification table, and the needle pressure test parameter is further adjusted according to the standard adjustment value, so as to realize the real-time regulation and control of the needle pressure test. At the same time, the application is also provided with a second preset threshold range. By judging whether the needle mark data obtained according to the contact mark of the probe 712 is located in the second preset threshold range, it can be judged whether the test result of the wafer to be tested 80 is abnormal, and at the same time, the needle pressure test parameter is adjusted according to the difference between the needle mark data and the second preset threshold range, so as to realize the real-time regulation and control of the needle pressure test, which can effectively reduce the result uncertainty caused by the contact problem in the needle pressure test.

[0152] In another aspect, the application can accurately locate the test data with errors by judging whether the current needle pressure data is within a first preset threshold range and whether the needle mark data is within a second preset threshold range, and thus can quickly and effectively locate the corresponding production line problem of the needle pressure test.

[0153] The above are only embodiments of the application, and do not limit the patent scope of the application. Any equivalent structure or equivalent process transformation using the content of the application specification and drawings, or direct or indirect application in other related technical fields, are also included in the patent protection scope of the application.

Claims

1. A wafer needle prodding test method, characterized by, The method comprises the following steps: acquiring preset needle pressure test parameters to control a probe and a wafer under test to perform needle pressure test; acquiring current needle pressure data of the probe and the wafer under test when the probe and the wafer under test are in contact, and judging whether the current needle pressure data is within a first preset threshold range; in response to yes, acquiring a contact trace, obtaining needle mark data based on the contact trace, and judging whether the needle mark data is within a second preset threshold range; wherein the contact trace is a contact trace left on the wafer under test when the probe and the wafer under test are in contact; in response to yes, storing the current needle pressure data and the needle mark data; the step of acquiring the contact trace and obtaining the needle mark data based on the contact trace comprises: controlling the wafer under test to move to an initial position to expose the contact trace of the wafer under test; adjusting the shooting angle to a preset shooting angle; acquiring an image of the contact trace under the preset shooting angle; extracting the needle mark data based on the image; wherein the extracted needle mark data includes length, width, depth, and distance from the center of the metal pin of the wafer under test; the step of judging whether the current needle pressure data is within the first preset threshold range comprises: in response to judging that the current needle pressure data is not within the first preset threshold range, controlling the probe and the wafer under test to stop needle pressure test; calculating a compensation value from the current needle pressure data, adjusting the needle pressure test parameters based on the compensation value to obtain new needle pressure test parameters, and controlling the probe and the wafer under test to perform needle pressure test based on the new needle pressure test parameters; the step of judging whether the needle mark data is within the second preset threshold range comprises: in response to judging that the needle mark data is not within the second preset threshold range, controlling the probe and the wafer under test to stop needle pressure test; calculating the difference between the needle mark data and the second preset threshold range; adjusting the needle pressure test parameters based on the difference to obtain new needle pressure test parameters, and controlling the probe and the wafer under test to perform needle pressure test based on the new needle pressure test parameters.

2. The method of claim 1, wherein, the step of calculating a compensation value from the current needle pressure data and adjusting the needle pressure test parameters based on the compensation value comprises: acquiring a preset data grading table, the data grading table comprising a plurality of continuous needle pressure ranges and parameter levels corresponding to the needle pressure ranges; matching the current needle pressure data with the data grading table to obtain a parameter level corresponding to the current needle pressure data, and acquiring a standard adjustment value corresponding to the parameter level; setting the standard adjustment value as the compensation value, and adjusting the needle pressure test parameters based on the compensation value.

3. The method of claim 1, wherein, the step of calculating a compensation value from the current needle pressure data and adjusting the needle pressure test parameters based on the compensation value comprises: acquiring a preset data grading table, the data grading table comprising a plurality of continuous needle pressure ranges and parameter levels corresponding to the needle pressure ranges; matching the current needle pressure data with the data grading table to obtain a parameter level corresponding to the current needle pressure data, so as to obtain a standard adjustment value corresponding to the parameter level; calculating a first difference value between the current needle pressure data and a minimum value of the corresponding needle pressure range, a second difference value between a maximum value and the minimum value of the needle pressure range, and a ratio of the first difference value to the second difference value; multiplying the standard adjustment value by the ratio to obtain the compensation value, and adjusting the needle pressure test parameter based on the compensation value.

4. The method of claim 1, wherein, The method further comprises: generating a test image based on the current needle pressure data; generating a test chart based on the needle mark data; outputting the test image and the test chart.

5. A wafer needle prodding test system, characterized by, The wafer needle pressure test system is used to implement the method according to any one of claims 1-4, comprising: a test device comprising a probe for performing needle pressure test on a wafer to be tested; a collection device for obtaining current needle pressure data of the probe and the wafer to be tested, obtaining contact marks, and obtaining needle mark data based on the contact marks; wherein the contact marks are contact marks left on the wafer to be tested when the probe contacts the wafer to be tested; an analysis and judgment device connected to the collection device, for judging whether the current needle pressure data is within a first preset threshold range, and for judging whether the needle mark data is within a second preset threshold range; an adjustment device connected to the analysis and judgment device and the collection device, for calculating a compensation value based on the current needle pressure data, adjusting the needle pressure test parameter based on the compensation value to obtain a new needle pressure test parameter, and for calculating a difference value between the needle mark data and the second preset threshold range, adjusting the needle pressure test parameter based on the difference value to obtain a new needle pressure test parameter; a storage device connected to the adjustment device, for storing the current needle pressure data, the needle mark data, and a preset needle pressure test parameter.

6. The wafer needle prodding test system of claim 5, wherein, The wafer needle pressure test system further comprises: a screen output device connected to the collection device, for generating a test image and / or a test chart based on the current needle pressure data and / or the needle mark data and outputting the test image and / or the test chart; a mail triggering device connected to the analysis and judgment device, for arranging test data into a mail based on a judgment result of the analysis and judgment device and sending the mail to an email box of a relevant test personnel.

7. The wafer needle pressure test system according to claim 6, wherein: the collection device comprises a first collection device and a second collection device, the first collection device is used to obtain the needle pressure data and generate the test image based on the needle pressure data; the second collection device is used to obtain the needle mark data and generate the test chart based on the needle mark data; the screen output device comprises a first output device and a second output device, the first output device is connected to the first collection device and used to output the test image, and the second output device is connected to the second collection device and used to output the test chart.

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