An electrostatic chucking device and a substrate processing system having the same

Abstract

The application discloses an electrostatic adsorption device and a substrate processing system with the same. The electrostatic adsorption device comprises a device body, an electrostatic generation module and an electrostatic control module in the device body. The electrostatic generation module is used for generating electrostatic, and the electrostatic control module is used for controlling whether the electrostatic generation module generates electrostatic and the size of the generated electrostatic. The bottom of the electrostatic adsorption device is provided with an insulating component. The electrostatic adsorption device can generate the adsorption edge ring or the particulate matter in the electrostatic vacuum reaction cavity, so that the damaged edge ring can be replaced or the particulate matter in the vacuum reaction cavity can be removed without opening the vacuum reaction cavity. In addition, the insulating component at the bottom of the electrostatic adsorption device can improve the electrostatic adsorption force when the electrostatic adsorption device adsorbs the edge ring, thereby reducing the operation cost of the electrostatic adsorption device.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of manufacturing semiconductor devices, and more particularly to an electrostatic chucking device and a substrate processing system in which the electrostatic chucking device is used. BACKGROUND

[0002] The plasma processing device has a vacuum reaction chamber, and uses the working principle of the vacuum reaction chamber to process semiconductor substrates. The working principle of the vacuum reaction chamber is to introduce a reaction gas containing a proper etching agent or deposition source gas into the vacuum reaction chamber, and then input radio frequency energy into the vacuum reaction chamber to activate the reaction gas, so as to ignite and maintain plasma, so as to etch a material layer on the surface of the semiconductor substrate or deposit a material layer on the surface of the semiconductor substrate, and then process the semiconductor substrate.

[0003] The vacuum reaction chamber of the plasma processing device contains a susceptor, and an electrostatic chuck is arranged on the susceptor. The electrostatic chuck is used to chuck the semiconductor substrate, so as to perform plasma processing (etching or deposition) on the semiconductor substrate. A plurality of edge rings such as a focus ring, a cover ring, and an isolation ring are arranged around the susceptor and the electrostatic chuck, so as to adjust the temperature, electric field intensity, and gas distribution in the vacuum reaction chamber of the plasma processing device, so as to ensure the uniformity of etching (or deposition) in the central region and the edge region of the semiconductor substrate.

[0004] When the plasma processing device processes the semiconductor substrate, the edge ring is often lost and has a short service life. Due to the loss of the edge ring, the adjustment of the temperature, electric field intensity, and gas distribution in the edge region of the semiconductor substrate by the edge ring changes, which causes the uniformity of the processing of the semiconductor substrate in different time periods to be poor. In addition, after the edge ring is lost, the gap between the electrostatic chuck and the edge ring becomes larger, which causes more etching gas, radicals, plasma, and other gases with corrosive and contaminating properties to pass through the above-mentioned larger gap between the electrostatic chuck and the edge ring, corrode and attack the sidewall of the electrostatic chuck, the sealing ring of the sidewall of the electrostatic chuck, and other components, and also pollute the semiconductor wafer with impurities such as polymers and metal particles, thereby affecting the quality of the finished product.

[0005] To solve the above problems, the currently commonly used method is to regularly replace the edge ring and regularly clean the susceptor and the electrostatic chuck in the vacuum reaction chamber. The process of replacing the edge ring or cleaning the impurity particles on the susceptor and the electrostatic chuck is relatively complex, and requires opening the vacuum reaction chamber in the plasma processing device, which is time-consuming and labor-intensive.

[0006] The statements herein merely provide background technology related to the present application, and do not necessarily constitute the prior art. SUMMARY

[0007] The application provides an electrostatic adsorption device for a plasma processing device and a substrate processing system thereof, which can generate electrostatic adsorption edge rings or impurity particles on a pedestal and an electrostatic chuck, and can replace the edge rings consumed in the vacuum reaction chamber without opening the vacuum reaction chamber or remove the impurity particles on the pedestal and the electrostatic chuck in the vacuum reaction chamber by controlling the electrostatic adsorption device to enter or exit the vacuum reaction chamber of the plasma processing device.

[0008] To achieve the above object, one of the technical solutions of the application provides an electrostatic adsorption device for a plasma processing device, which comprises a device body, an electrostatic generation module and an electrostatic control module in the device body; the electrostatic generation module is used for generating electrostatic, the electrostatic control module is connected with the electrostatic generation module and is used for controlling whether the electrostatic generation module generates electrostatic and the size of the generated electrostatic; and the bottom of the electrostatic adsorption device is provided with an insulating component.

[0009] Optionally, the electrostatic adsorption device is used for entering or exiting the vacuum reaction chamber of the plasma processing device, and the adsorption and desorption of the edge rings in the vacuum reaction chamber are realized by controlling the electrostatic generation module to generate or not generate electrostatic or the size of the generated electrostatic, so that the edge rings are replaced.

[0010] Optionally, the electrostatic adsorption device is used for entering or exiting the vacuum reaction chamber of the plasma processing device, and the adsorption and desorption of the edge rings in the vacuum reaction chamber are realized by controlling the electrostatic generation module to generate or not generate electrostatic or the size of the generated electrostatic, so that the edge rings are replaced.

[0011] Optionally, the device body is made of an insulating material.

[0012] Optionally, the thickness of the electrostatic adsorption device is not more than 6 mm.

[0013] Optionally, the electrostatic generation module comprises a power module and at least one pair of embedded electrodes, the input voltage polarities of the two electrodes in each pair of embedded electrodes are opposite; the electrostatic control module comprises a voltage control module, the input end of the voltage control module is connected with the output end of the power module, and the output end of the voltage control module is connected with the two electrodes in each pair of embedded electrodes respectively; and the voltage control module is used for raising the voltage output by the power module to a first adsorption voltage sufficient for adsorbing the edge rings or controlling the voltage output by the power module to a first desorption voltage which is opposite in polarity to the first adsorption voltage.

[0014] Optionally, the first desorption voltage is smaller than the first adsorption voltage.

[0015] Optionally, the electrostatic control module further comprises a wireless transmission module connected with the voltage control module, for receiving an external control signal and sending it to the voltage control module, so that the voltage control module processes the voltage output by the power module.

[0016] Optionally, the two electrodes in each pair of the embedded electrodes are uniformly spaced on the outer ring of the electrostatic adsorption device.

[0017] Optionally, the bottom surface of the insulating component protrudes or is flush with the bottom surface of the device body of the electrostatic adsorption device.

[0018] Optionally, the insulating component is uniformly or non-uniformly arranged at the bottom of the electrostatic adsorption device along the radial direction of the electrostatic adsorption device.

[0019] Optionally, the insulating component is annularly arranged at the bottom of the outer ring of the electrostatic adsorption device.

[0020] Optionally, the insulating component comprises a planar adsorption part and a beveled adsorption part matching the shape of the edge ring, so as to more closely fit the edge ring and reduce the voltage of the first adsorption voltage.

[0021] Optionally, the shape of the outer ring of the device body matches the shape of the insulating component.

[0022] Optionally, the insulating component is elastic.

[0023] Optionally, the material used by the insulating component includes at least one of Teflon, epoxy resin, silicone, and polyacrylic rubber.

[0024] Optionally, the lower surface of the electrostatic adsorption device is provided with a notch for accommodating the pick-and-place and conveying of the electrostatic adsorption device by a robot.

[0025] Optionally, the upper surface of the electrostatic adsorption device is provided with a handle-shaped structure for facilitating the pick-and-place and conveying of the electrostatic adsorption device by a robot.

[0026] Optionally, the bottom of the electrostatic adsorption device is further provided with a positioning part for positioning contact with the edge ring.

[0027] Another technical solution of the present application further provides a substrate processing system, comprising:

[0028] A plasma processing device, comprising:

[0029] A vacuum reaction chamber for processing a substrate;

[0030] A lower electrode in the vacuum reaction chamber for supporting the substrate.

[0031] a peripheral ring disposed around the lower electrode; and

[0032] a plurality of liftable pin assemblies disposed through the lower electrode;

[0033] The substrate processing system further comprises:

[0034] the electrostatic chucking device; and

[0035] a robot for moving the electrostatic chucking device into or out of a vacuum reaction chamber in the plasma processing device.

[0036] Optionally, the substrate processing system further comprises a storage chamber for storing the electrostatic chucking device and a damaged peripheral ring or a new peripheral ring.

[0037] Optionally, the substrate processing system further comprises a host computer for storing and executing a plasma processing procedure; the wireless transmission module in the electrostatic chucking device is communicatively connected to the host computer to obtain control instructions from the host computer.

[0038] Optionally, the peripheral ring is a focus ring.

[0039] The present application has the following advantages:

[0040] The electrostatic chucking device can generate electrostatically-chucked peripheral rings or particles, and can be controlled by the robot to enter or exit the vacuum reaction chamber, so that the damaged peripheral ring can be replaced or the particles in the vacuum reaction chamber can be removed without opening the vacuum reaction chamber, which is simple to operate, improves the work efficiency, and greatly reduces the maintenance cost of the plasma processing device. In addition, the bottom of the electrostatic chucking device is provided with an insulating part, which can better closely fit the uneven surface of the damaged peripheral ring, improve the electrostatic chucking force when the electrostatic chucking device chucks the peripheral ring, reduce the chucking voltage of the electrostatic chucking device, and thus reduce the operating cost of the electrostatic chucking device. BRIEF DESCRIPTION OF DRAWINGS

[0041] Figure 1 FIG. 1 is a structural schematic diagram of a substrate processing system.

[0042] Figure 2 FIG. 2 is a structural schematic diagram of a plasma processing device.

[0043] Figure 3 FIG. 3 is a structural schematic diagram of an electrostatic chucking device.

[0044] Figure 4 FIG. 4 is a structural schematic diagram of a clamping part with a notch structure.

[0045] Figure 5This is a schematic diagram of the clamping part, which uses a handle-like structure.

[0046] Figure 6 This is a schematic diagram of the first structure of the insulating component.

[0047] Figure 7 for Figure 6 A schematic diagram of the cross-section at point X.

[0048] Figure 8 This is a schematic diagram of the second structure of the insulating component.

[0049] Figure 9 This is a schematic diagram of the first structure of the positioning component.

[0050] Figure 10 This is a schematic diagram of the second structure of the positioning component.

[0051] Figure 11 This is a schematic diagram of the third structure of the positioning component.

[0052] Figure 12 A cross-sectional schematic diagram of the electrostatic adsorption device provided in the second embodiment. Detailed Implementation

[0053] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0054] like Figure 1 The figure shows a schematic diagram of a substrate processing system according to the present invention. The substrate processing system includes: at least one plasma processing device 1 for plasma processing of the substrate, a transmission cavity 2, and a robot arm 5, a storage cavity 3 and a host (not shown in the figure) provided in the transmission cavity.

[0055] The edge ring 104 in the plasma processing device 1 is eroded by plasma bombardment after working in the vacuum reaction chamber 101 for a period of time, and the shape and thickness of the edge ring 104 are changed. As described in the background section, the edge ring 104 is changed to affect the adjustment of the temperature, electric field intensity and gas distribution of the edge region of the substrate, and the uniformity of the substrate processing in different time periods is changed, so the edge ring 104 needs to be replaced regularly. The storage chamber 3 is used to store the electrostatic adsorption device 4, the edge ring to be replaced or the new edge ring, the edge ring to be replaced is the eroded edge ring, and the electrostatic adsorption device 4 is used to generate static electricity to electrostatically adsorb the edge ring to be replaced or the new edge ring, so as to replace the edge ring 104. The robot 2 is used to take and place and transfer the electrostatic adsorption device 4, so as to move the electrostatic adsorption device 4 adsorbing the edge ring 104 into or out of the plasma processing device 1, so as to replace the edge ring 104 without opening the plasma processing device. The host computer is used to store and execute the plasma processing process, and generates corresponding control instructions according to the progress of the substrate processing system.

[0056] As shown in Figure 2 The plasma processing device 1 includes a vacuum reaction chamber 101 for processing a substrate, an electrostatic chuck 102 and a susceptor 103 arranged in the vacuum reaction chamber 101 for supporting the substrate, an edge ring 104 arranged around the electrostatic chuck 102, and a plurality of pin assemblies 106 arranged through the electrostatic chuck 102 and the susceptor 103. A transmission port 105 for transmitting the substrate or the electrostatic adsorption device 4 is arranged on the side wall of the vacuum reaction chamber 101, and the robot 2 moves the electrostatic adsorption device 4 into or out of the vacuum reaction chamber 101 in the plasma processing device 1 through the transmission port 105. The electrostatic chuck 102 and the susceptor 103 are collectively referred to as a lower electrode, and a plurality of through holes 107 are arranged on the lower electrode in the vertical direction of the lower electrode. The edge ring 104 is used to adjust the electric field intensity, temperature and gas distribution in the vacuum reaction chamber 101, so as to ensure the uniformity of the plasma processing rate of the center region and the edge region of the substrate. The edge ring 104 is a focusing ring, a cover ring or an isolation ring. A plurality of pin assemblies 106 are arranged in the corresponding through holes 107 on the lower electrode, and the pin assemblies 106 are used to take and place the substrate by lifting, and are also used to take and place the electrostatic adsorption device 4.

[0057] Embodiment one:

[0058] As shown in Figure 3As shown, a structural schematic diagram of the electrostatic adsorption device 4 is shown, which comprises a device body 401, and an electrostatic generation module 402 and an electrostatic control module 403 located in the device body 401.

[0059] The device body 401 can adopt a disc shape, a rectangular shape or a polygonal shape, etc., and the size of the device body 401 is greater than or equal to the size of the edge ring. Preferably, the device body 401 adopts a disc shape, and the diameter of the device body 401 is greater than or equal to the outer diameter of the edge ring 401. The device body 401 adopts an insulating material, and optionally, the device body 401 adopts a ceramic insulating material.

[0060] The electrostatic generation module 402 comprises a power supply module 404 for providing a voltage, and a pair of embedded electrodes, which comprises two electrodes 405 with opposite input voltage polarities, and the two electrodes 405 are uniformly spaced apart at the outer circle of the device body 401.

[0061] The electrostatic control module 403 comprises a voltage control module 406, the input end of the voltage control module 406 is connected with the output end of the power supply module 404, and the output end of the voltage control module 406 is connected with the two electrodes 405 in the embedded electrodes respectively, forming two electrode loops. The voltage control module 406 is used to control whether the voltage output by the power supply module 404 is conducted to the embedded electrodes, thereby controlling whether the electrostatic adsorption device 4 generates static electricity. The voltage control module 406 is also used to raise the voltage output by the power supply module 404 to a first adsorption voltage. The first adsorption voltage generates static electricity through the embedded electrodes to adsorb the edge ring 104, and the static adsorption force generated by the first adsorption voltage should be sufficient to overcome the gravity of the edge ring 104. Alternatively, the voltage control module 406 is also used to control the voltage output by the power supply module 404 to a first desorption voltage with opposite polarity to the first adsorption voltage. The first desorption voltage is used to neutralize the residual charge in the electrostatic adsorption device 4 when it releases the edge ring 104. The first desorption voltage is less than the first adsorption voltage.

[0062] The static electricity control module 403 further comprises a wireless transmission module 407, which is in wireless communication connection with the host computer to receive the control instructions issued by the host computer. The wireless transmission module 407 is also connected with the voltage control module 406, for forwarding the control instructions to the voltage control module 406. The voltage control module 406 further processes the voltage output by the power module 404 according to the control instructions, specifically: the voltage control module 406 turns on or off the connection between the power module 404 and the embedded electrode, to control whether the electrostatic adsorption device 4 generates static electricity; or, the voltage control module 406 raises the voltage output by the power module 404 to the first adsorption voltage according to the control instructions; or, the voltage control module 406 converts the voltage output by the power module 404 into the first desorption voltage according to the control instructions.

[0063] In order to facilitate the mechanical hand 2 to take, place and convey the electrostatic adsorption device 4 in and out of the vacuum reaction cavity 101, a clamping part is arranged on the electrostatic adsorption device 4. As shown in Figure 4 , the clamping part is a notch 408 arranged at the bottom of the device body 401. The mechanical hand 2 realizes the taking, placing and conveying of the electrostatic adsorption device 4 by inserting into the notch 408. As shown in Figure 5 , the clamping part can also be a handle-shaped structure 410 arranged at the top of the device body 401. The mechanical hand 2 realizes the taking, placing and conveying of the electrostatic adsorption device 4 by clamping the handle-shaped structure 410. Due to the size limitation of the transmission port 105 on the vacuum reaction cavity 101, the overall thickness of the electrostatic adsorption device 4 is preferably not more than 6 mm. In this embodiment, the clamping part is the notch 408 arranged at the bottom of the device body 401, so as to ensure the thickness of the device body 401 and facilitate the integration of the static electricity generation module 402 and the static electricity control module 403 in the device body 401.

[0064] The bottom of the device body 401 of the electrostatic adsorption device 4 is provided with an insulating part 409, and the bottom surface of the insulating part 409 is protruded from or flush with the bottom surface of the device body 401. As shown in Figure 6 to Figure 7 , the insulating part 409 is arranged in a ring shape at the bottom of the outer circle of the device body 401 and is located directly below the embedded electrode. As shown in Figure 8 , the insulating part 409 can also be arranged in a radial radiation shape at the bottom of the device body 401 along the radial direction of the electrostatic adsorption device 4. Preferably, the insulating part 409 is uniformly arranged in a radial radiation shape at the bottom of the device body 401 along the radial direction of the electrostatic adsorption device 4. In this embodiment, the insulating part 409 is arranged in a ring shape at the bottom of the outer circle of the device body 401.

[0065] Optionally, the insulating component 409 is elastic, and deforms to tightly contact the uneven upper surface of the edge ring to be replaced when the electrostatic chucking device 4 is chucking the edge ring 104, thereby ensuring the stability of the electrostatic chucking device 4 chucking the edge ring 104. The insulating component 409 can be made of at least one polymer material such as Teflon, epoxy resin, silicone resin, polyacrylic rubber, etc.

[0066] The smaller the first chucking voltage, the smaller the size of the voltage control module 406, which is conducive to integrating the voltage control module 406 in the device body 401 with limited space. The size of the first chucking voltage is affected by the following factors: the contact area between the electrostatic chucking device 4 and the edge ring 104, the thickness of the insulating component 409, the material of the insulating component 409, and the material and weight of the edge ring 104.

[0067] The larger the contact area between the electrostatic chucking device 4 and the edge ring 104, the smaller the value of the first chucking voltage required when the electrostatic chucking device 4 is chucking the edge ring 104. The thinner the thickness of the insulating component 409, the smaller the value of the first chucking voltage. Since the electrostatic chucking device 4 is applied after the process of the plasma processing device is completed, the insulating component 409 of the electrostatic chucking device 4 does not need to consider high voltage resistance and does not need to consider corrosion problems, so the thickness of the insulating component 409 can be minimized. However, there is a lower limit to the thickness of the insulating component 409 to avoid the insulating component 409 being directly broken down by the first chucking voltage. The material factor of the insulating component 409 mainly refers to the dielectric coefficient of the insulating component 409. Under the condition that the value of the first chucking voltage is the same, the higher the dielectric coefficient of the insulating component 409, the higher the electrostatic chucking force generated by the electrostatic chucking device 4, and selecting an insulating component 409 with a higher dielectric coefficient can reduce the value of the first chucking voltage. The material factor of the edge ring 104 also refers to the dielectric coefficient of the edge ring 104. Under the condition that the value of the first chucking voltage is the same, when the edge ring 104 is made of SiC, Si or other semiconductor or conductor materials, the electrostatic chucking force generated by the electrostatic chucking device 4 is greater than that when the edge ring 104 is made of insulating materials.

[0068] The above influencing factors all change the capacitance value between the two electrode loops, thereby affecting the size of the electrostatic chucking force.

[0069] Optionally, the electrostatic adsorption device 4 is provided with a positioning component 411 at the bottom. The positioning component 411 is used to position the edge ring 104 to ensure that the position of the new edge ring and the replaced edge ring 104 in the vacuum reaction chamber 101 remains unchanged. The positioning component 411 can adopt various structures, such as a ring-shaped protruding structure provided at the bottom of the device body 401, the inner edge of the protruding structure matching the outer edge of the edge ring 104, as shown in Figure 9 Optionally, the electrostatic adsorption device 4 is provided with a positioning component 411 at the bottom. The positioning component 411 is used to position the edge ring 104 to ensure that the position of the new edge ring and the replaced edge ring 104 in the vacuum reaction chamber 101 remains unchanged. The positioning component 411 can adopt various structures, such as a ring-shaped protruding structure provided at the bottom of the device body 401, the inner edge of the protruding structure matching the outer edge of the edge ring 104, as shown in Figure 9 Optionally, the electrostatic adsorption device 4 is provided with a positioning component 411 at the bottom. The positioning component 411 is used to position the edge ring 104 to ensure that the position of the new edge ring and the replaced edge ring 104 in the vacuum reaction chamber 101 remains unchanged. The positioning component 411 can adopt various structures, such as a ring-shaped protruding structure provided at the bottom of the device body 401, the inner edge of the protruding structure matching the outer edge of the edge ring 104, as shown in Figure 10 Optionally, the electrostatic adsorption device 4 is provided with a positioning component 411 at the bottom. The positioning component 411 is used to position the edge ring 104 to ensure that the position of the new edge ring and the replaced edge ring 104 in the vacuum reaction chamber 101 remains unchanged. The positioning component 411 can adopt various structures, such as a ring-shaped protruding structure provided at the bottom of the device body 401, the inner edge of the protruding structure matching the outer edge of the edge ring 104, as shown in

[0070] The electrostatic adsorption device 4 in the present application can replace the damaged edge ring 104 in the vacuum reaction chamber 101 without opening the vacuum reaction chamber 101. Specifically, the method for replacing the damaged edge ring 104 by using the electrostatic adsorption device 4 comprises the following steps:

[0071] S1, the idle electrostatic adsorption device 4 is moved into the vacuum reaction chamber 101 to generate electrostatic adsorption of the edge ring to be replaced, and then the transmission mechanical hand 2 moves the edge ring to be replaced out of the vacuum reaction chamber 101.

[0072] Specifically, the mechanical hand 2 is inserted into the notch 408 of the idle electrostatic adsorption device 4 to clamp the electrostatic adsorption device 4, and then the electrostatic adsorption device 4 is transmitted into the vacuum reaction chamber 101 through the transmission port 105 on the vacuum reaction chamber 101 in the plasma processing device 1. At this time, the height of the electrostatic adsorption device 4 in the vacuum reaction chamber 101 is recorded as the first height.

[0073] The several needle assemblies 106 in the plasma processing device 1 are raised to support the electrostatic adsorption device 4, and the mechanical hand 2 is retracted to move out of the vacuum reaction chamber 101. The needle assemblies 106 are lowered until the insulating component 409 of the electrostatic adsorption device 4 is in close contact with the uneven surface of the edge ring to be replaced. During the lowering process of the needle assemblies 106, it is necessary to ensure that the positioning component 411 of the electrostatic adsorption device 4 is engaged with the replaced edge ring 104.

[0074] The voltage control module 406 in the electrostatic adsorption device 4 raises the voltage output by the power module 404 to a first adsorption voltage, and the first adsorption voltage generates electrostatic adsorption to the edge ring to be replaced.

[0075] The needle assembly 106 is raised again to lift the electrostatic adsorption device 4 adsorbing the edge ring to be replaced to the first height. The robot 2 is inserted into the notch 408 of the electrostatic adsorption device 4 again to transfer the electrostatic adsorption device 4 into the storage cavity 3 to realize the recycling of the edge ring to be replaced.

[0076] The voltage control module 406 in the electrostatic adsorption device 4 disconnects the power module 404 from the embedded electrode to release the edge ring to be replaced. When the electrostatic adsorption device 4 releases the edge ring to be replaced, the voltage control module 406 converts the voltage output by the power module 404 to a first desorption voltage to neutralize the residual charge in the electrostatic adsorption device 4.

[0077] S2, the electrostatic adsorption device 4 adsorbs a new edge ring and moves into the vacuum reaction cavity 101, and then releases the new edge ring to complete the replacement of the edge ring 104.

[0078] Specifically, the electrostatic adsorption device 4 generates electrostatic adsorption to the new edge ring after the positioning component 411 contacts the new edge ring. The robot 2 transfers the electrostatic adsorption device 4 adsorbing the new edge ring into the vacuum reaction cavity 101, and ensures that the position where the robot 2 transfers the electrostatic adsorption device 4 adsorbing the new edge ring into the vacuum reaction cavity 101 is the same as the position where the robot 2 transfers the empty electrostatic adsorption device 4 into the vacuum reaction cavity 101 in step S1.

[0079] The needle assembly 106 is raised to support the electrostatic adsorption device 4 adsorbing the new edge ring, and is slowly lowered to the corresponding position. After the electrostatic adsorption device 4 releases the new edge ring, the electrostatic adsorption device 4 is lifted to the first height by the needle assembly 106, and is then moved out of the vacuum reaction cavity 101 by the robot 2 to complete the replacement of the edge ring 104.

[0080] In addition, the electrostatic adsorption device 4 can also be used to remove impurity particles in the vacuum reaction cavity 101. Since the weight of the impurity particles is much smaller than the weight of the edge ring 104, the electrostatic adsorption device 4 needs to generate smaller electrostatic adsorption when used to remove the impurity particles. When the electrostatic adsorption device 4 adsorbs the impurity particles in the vacuum reaction cavity 101, the voltage control module 406 raises the voltage output by the power module 404 to a second adsorption voltage. When the electrostatic adsorption device 4 desorbs the impurity particles, the voltage control module 406 converts the voltage output by the power module 404 to a second desorption voltage opposite in polarity to the second adsorption voltage.

[0081] Specifically, the method for removing the particles in the vacuum reaction chamber 101 by using the electrostatic adsorption device 4 comprises the following steps:

[0082] The robot 2 inserts into the notch 408 of the idle electrostatic adsorption device 4 to clamp the electrostatic adsorption device 4, and then transfers the electrostatic adsorption device 4 into the vacuum reaction chamber 101 through the transmission port 105 on the vacuum reaction chamber 101 in the plasma processing device 1. At this time, the height of the electrostatic adsorption device 4 in the vacuum reaction chamber 101 is recorded as the first height.

[0083] The needle assembly 106 in the plasma processing device 1 rises to support the idle electrostatic adsorption device 4, and then slowly descends until the electrostatic adsorption device 4 is in contact with the lower electrode. The voltage control module 406 in the electrostatic adsorption device 4 increases the voltage output by the power module 404 to a second adsorption voltage, and the second adsorption voltage generates electrostatic adsorption vacuum in the chamber 101 to the impurity particles through the embedded electrode.

[0084] The needle assembly 106 rises again to lift the electrostatic adsorption device 4 adsorbed with the impurity particles to the first height, and then the robot 2 inserts into the notch 408 of the electrostatic adsorption device 4 again to transfer the electrostatic adsorption device 4 into the storage chamber 3.

[0085] The voltage control module 406 in the electrostatic adsorption device 4 disconnects the connection between the power module 404 and the embedded electrode to release the impurity particles. When the electrostatic adsorption device 4 releases the impurity particles, the voltage control module 406 converts the voltage output by the power module 404 to a second desorption voltage to neutralize the residual charge in the electrostatic adsorption device 4. The removal of the impurity particles in the vacuum reaction chamber 101 is completed.

[0086] The electrostatic adsorption device 4 of the present application can generate an electrostatic adsorption edge ring 104 or particles, and can be controlled by the robot 2 to enter and exit the vacuum reaction chamber 101, so as to replace the damaged edge ring or remove the particles in the vacuum reaction chamber 101 without opening the vacuum reaction chamber 101. The present application is simple to operate, improves the work efficiency and greatly reduces the cost of maintenance of the plasma processing device 1. In addition, the bottom of the electrostatic adsorption device 4 is provided with an insulating part 409, which can better tightly fit the uneven surface of the damaged edge ring 104, improve the electrostatic adsorption force of the electrostatic adsorption device 4 when adsorbing the edge ring 104, and reduce the adsorption voltage of the electrostatic adsorption device 4, thereby reducing the operating cost of the electrostatic adsorption device 4.

[0087] Example two:

[0088] Based on the structural characteristics of the substrate processing system and the plasma processing device of the first embodiment, the structure of the electrostatic chucking device 4 is changed in this embodiment, mainly the device body 401, the electrostatic generating module 402 and the insulation component 409.

[0089] The electrostatic chucking device 4 comprises a device body 401, an electrostatic generating module 402 and an electrostatic control module 403 in the device body 401. The electrostatic generating module 402 comprises a power module 404 and two pairs of embedded electrodes. The power module 404 is used to provide voltage, and each pair of embedded electrodes comprises two electrodes 405 with opposite input voltage polarities, which are uniformly spaced on the outer circle of the device body 401. The electrostatic control module 403 comprises a voltage control module 406, the input end of which is connected to the output end of the power module 404, and the output end of which is connected to two electrodes 405 in the embedded electrodes.

[0090] The bottom of the device body 401 of the electrostatic chucking device 4 is provided with an insulation component 409, the bottom surface of which is protruding or flat with the bottom surface of the device body 401. Specifically, the insulation component 409 is annularly arranged at the bottom of the outer circle of the device body 401 and located directly below the embedded electrodes. Further, as shown in Figure 12 The insulation component 409 comprises a flat chucking portion 412 and a bevel chucking portion 413 matching the shape of the edge ring 104. The upper part of the flat chucking portion 412 and the bevel chucking portion 413 corresponds to a pair of embedded electrodes, and the vertical distance between the lower surface of each pair of embedded electrodes and the lower surface of the flat chucking portion 412 or the bevel chucking portion 413 of the insulation component 409 is less than 100 μm. Correspondingly, the shape of the outer circle of the device body 401 should match the shape of the insulation component 409. The bevel chucking portion 413 can be more closely attached to the edge ring 104, thereby improving the electrostatic chucking force of the electrostatic chucking device 4 and reducing the requirement of the first chucking voltage.

[0091] In addition, the other structures and the action modes of the components of this embodiment, as well as the replacement method of the edge ring 104 in the plasma processing device and the removal method of the impurity particles in the vacuum reaction chamber 101, are the same as those of the first embodiment, and this embodiment will not be repeated.

[0092] The electrostatic adsorption device 4 of the application can generate the electrostatic adsorption edge ring 104 or the particles, and can enter and exit the vacuum reaction chamber 101 under the control of the robot 2, so as to replace the damaged edge ring 104 or remove the particles in the vacuum reaction chamber 101 without opening the vacuum reaction chamber 101, which is simple in operation, improves the work efficiency, greatly reduces the maintenance cost of the plasma processing device 1, and has the advantages of simple structure, low cost, high efficiency, and the like. In addition, the bottom of the electrostatic adsorption device 4 is provided with an insulating part 409, the insulating part 409 comprises a planar adsorption part 412 and a bevel adsorption part 413 matched with the shape of the edge ring 104, the bevel adsorption part 413 of the insulating part 409 can be more closely attached to the uneven surface of the damaged edge ring 104, the electrostatic adsorption force of the electrostatic adsorption device 4 when adsorbing the edge ring 104 is improved, the adsorption voltage of the electrostatic adsorption device 4 is reduced, and thus the operation cost of the electrostatic adsorption device 4 is reduced.

[0093] Although the content of the application has been described in detail through the above preferred embodiments, it should be recognized that the above description should not be considered as a limitation of the application. After reading the above content, various modifications and alternatives of the application will be obvious to those skilled in the art. Therefore, the protection scope of the application should be defined by the appended claims.

Claims

1. An electrostatic chucking device for a plasma processing device, characterized in that The electrostatic adsorption device is used for entering and exiting the vacuum reaction chamber of the plasma processing device, and comprises a device body and an electrostatic generation module and an electrostatic control module in the device body; the electrostatic generation module is used for generating static electricity, and the electrostatic control module is connected with the electrostatic generation module and used for controlling whether the electrostatic generation module generates static electricity and the size of the generated static electricity, so as to realize adsorption and desorption of the edge ring in the vacuum reaction chamber and further realize replacement of the edge ring; the bottom of the electrostatic adsorption device is provided with an insulating component, and the insulating component comprises a planar adsorption part and a bevel adsorption part matched with the shape of the edge ring.

2. The electrostatic chucking device of claim 1, wherein, The electrostatic adsorption device is used for entering and exiting the vacuum reaction chamber of the plasma processing device, and the static electricity generated by the electrostatic generation module is controlled to realize adsorption and removal of particulate matters in the vacuum reaction chamber.

3. The electrostatic chucking device of claim 1, wherein, The device body is made of insulating material.

4. The electrostatic chuck of claim 1, wherein The thickness of the electrostatic adsorption device is not more than 6 mm.

5. The electrostatic chuck of claim 1, wherein the ceramic material comprises a ceramic material having a dielectric constant of at least 10. The electrostatic generation module comprises a power module and at least one pair of embedded electrodes, and the input voltage polarities of the two electrodes in each pair of embedded electrodes are opposite; the electrostatic control module comprises a voltage control module, the input end of the voltage control module is connected with the output end of the power module, and the output end of the voltage control module is connected with the two electrodes in each pair of embedded electrodes respectively; the voltage control module is used for raising the voltage output by the power module to a first adsorption voltage sufficient for adsorbing the edge ring or controlling the voltage output by the power module to a first desorption voltage opposite in polarity to the first adsorption voltage.

6. The electrostatic chuck of claim 5, wherein the ceramic material is a ceramic material having a dielectric constant of at least 10. The first desorption voltage is smaller than the first adsorption voltage.

7. The electrostatic adsorption device as described in claim 5, characterized in that, The electrostatic control module further comprises a wireless transmission module connected with the voltage control module, used for receiving an external control signal and sending the control signal to the voltage control module, so that the voltage control module processes the voltage output by the power module.

8. The electrostatic chuck of claim 5, wherein the ceramic material is a ceramic material having a dielectric constant of at least 10. The two electrodes in each pair of embedded electrodes are uniformly spaced apart at the outer ring of the electrostatic adsorption device.

9. The electrostatic chuck of claim 1, wherein, The bottom surface of the insulating component is convex or flat with respect to the bottom surface of the device body of the electrostatic adsorption device.

10. The electrostatic chuck of claim 1, wherein, The insulating component is uniformly or non-uniformly arranged at the bottom of the electrostatic adsorption device in a radial direction of the electrostatic adsorption device.

11. The electrostatic chuck of claim 1, wherein The insulating component is annularly arranged at the bottom of the outer ring of the electrostatic adsorption device.

12. The electrostatic chuck of claim 11, wherein the ceramic material is a ceramic material having a dielectric constant of at least 10. The shape of the outer ring of the device body is matched with the shape of the insulating component.

13. The electrostatic chuck of claim 1, wherein The insulating component has elasticity.

14. The electrostatic chuck of claim 13, wherein the ceramic material is a ceramic material having a dielectric constant of at least 10. The material used by the insulating component comprises at least one of Teflon, epoxy resin, silicone resin and polyacrylic rubber.

15. The electrostatic chuck of claim 1, wherein The lower surface of the electrostatic adsorption device is provided with a notch for accommodating a mechanical hand to take, place and convey the electrostatic adsorption device.

16. The electrostatic chuck of claim 1, wherein The upper surface of the electrostatic adsorption device is provided with a handle structure for accommodating a mechanical hand to take, place and convey the electrostatic adsorption device.

17. The electrostatic chuck of claim 1, wherein The bottom of the electrostatic adsorption device is further provided with a positioning part for positioning contact with the edge ring.

18. A substrate processing system, comprising: a plasma processing device, the plasma processing device comprising: a vacuum reaction chamber for processing a substrate; and an electrostatic adsorption device for entering and exiting the vacuum reaction chamber of the plasma processing device, the electrostatic adsorption device comprising: a lower electrode positioned within the vacuum reaction chamber for supporting a substrate; a edge ring disposed around the lower electrode; and A plurality of liftable needle assemblies arranged through the lower electrode; characterized in that, The system further comprises: The electrostatic chucking device according to any one of claims 1-17; and A robot for moving the electrostatic chucking device into or out of a vacuum reaction chamber in the plasma processing device.

19. The substrate processing system of claim 18, wherein, Further comprising a storage chamber for storing the electrostatic chucking device and an edge ring to be replaced or a new edge ring.

20. The substrate processing system of claim 18, wherein, Further comprising a host computer for storing and executing a plasma processing process; the wireless transmission module in the electrostatic chucking device is in communication connection with the host computer to obtain control instructions of the host computer.

21. The substrate processing system of claim 18, wherein, The edge ring is a focus ring.

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