Method and apparatus for leak detection of a semiconductor process equipment reaction chamber

Abstract

This invention discloses a method and device for detecting the leakage rate of a reaction chamber in semiconductor process equipment. The method includes: evacuating the reaction chamber of the semiconductor process equipment to bring the gas pressure of the reaction chamber to a preset value; controlling the semiconductor process equipment to a preset operating state; detecting the current gas pressure value inside the reaction chamber when the semiconductor process equipment has been in the preset operating state for a preset time; and calculating the leakage rate of the reaction chamber based on the current gas pressure value and the preset gas pressure value. This invention solves the problem that static testing is used for leakage rate detection of the reaction chamber in semiconductor process equipment, which cannot accurately reflect the airtightness of the reaction chamber and leads to an increase in silicon wafer defect rate.

Description

Technical Field

[0001] This invention relates to the field of semiconductor manufacturing technology, and in particular to a method and device for detecting the leakage rate of a reaction chamber in semiconductor process equipment. Background Technology

[0002] Hermeticity characterizes the ability of a vacuum system to prevent gas infiltration. In semiconductor chemical vapor deposition (CVD) processes, the hermeticity of the reaction chamber is of paramount importance. Gas leakage can affect reaction pressure, gas flow distribution, and generate impurity particles, leading to abnormalities or even scrapping of silicon wafers in the semiconductor process. The airtightness of the reaction chamber is generally measured by its "leakage rate"; a lower leakage rate indicates better sealing.

[0003] Traditional processes typically only perform leak rate testing after maintenance of the reaction chamber, or after a process anomaly has occurred, requiring shutdown testing for troubleshooting. However, a single maintenance cycle can produce thousands or even tens of thousands of silicon wafers, and the equipment cannot reflect the leak rate during daily production, leading to potential product quality risks. Furthermore, traditional methods usually only employ static testing (no component movement after closing the inlet and outlet valves). During semiconductor chemical vapor deposition (CVD) processes, the stage within the reaction chamber may move (up and down, or rotate, etc.). In some cases, there may be no leaks when static, but leaks can occur after mechanical movement. Therefore, traditional leak detection methods cannot detect leaks accurately and promptly, resulting in product quality issues. Summary of the Invention

[0004] The technical problem to be solved by the present invention is to provide a method and device for detecting the leakage rate of a reaction chamber in a semiconductor process equipment, so as to solve the problem that the use of static testing for leakage rate detection of the reaction chamber in a semiconductor process equipment cannot truly and accurately reflect the airtightness of the reaction chamber, resulting in an increase in the defect rate of silicon wafers.

[0005] To address the aforementioned technical problems, according to one aspect of the present invention, a method for detecting the leakage rate of a reaction chamber in a semiconductor process equipment is provided, comprising:

[0006] The reaction chamber of the semiconductor process equipment is evacuated so that the gas pressure value of the reaction chamber is at a preset gas pressure value;

[0007] Control the semiconductor process equipment to be in a preset operating state;

[0008] When the semiconductor process equipment is in the preset operating state for a preset time, the current gas pressure value in the reaction chamber is detected;

[0009] The leakage rate of the reaction chamber is calculated based on the current air pressure value and the preset air pressure value.

[0010] In some embodiments, the leak rate detection method for the reaction chamber of semiconductor process equipment further includes:

[0011] Detect whether the semiconductor process equipment has completed the preset operating program;

[0012] If so, then the step of evacuating the reaction chamber of the semiconductor process equipment to bring the gas pressure value of the reaction chamber to a preset gas pressure value is performed.

[0013] In some embodiments, the preset operating program of the semiconductor process equipment is a cleaning program;

[0014] After the cleaning procedure is completed, the step of evacuating the reaction chamber of the semiconductor process equipment is performed so that the gas pressure value of the reaction chamber is at a preset gas pressure value.

[0015] In some embodiments, the step of controlling the semiconductor process equipment to a preset operating state includes:

[0016] The stage of the semiconductor process equipment is controlled to operate according to preset actions.

[0017] In some embodiments, the step of evacuating the reaction chamber of the semiconductor process equipment to bring the gas pressure of the reaction chamber to a preset gas pressure value includes:

[0018] Close the air inlet valve of the reaction chamber and open the air outlet valve of the reaction chamber to evacuate the reaction chamber;

[0019] When the gas pressure in the reaction chamber reaches the preset gas pressure value, the exhaust valve is closed so that the gas pressure in the reaction chamber remains at the preset gas pressure value.

[0020] According to another aspect of the present invention, a leak rate detection device for a reaction chamber of a semiconductor process apparatus is provided, comprising:

[0021] The vacuum module is configured to evacuate the reaction chamber of the semiconductor process equipment so that the gas pressure value of the reaction chamber is at a preset gas pressure value.

[0022] The control module is configured to control the semiconductor process equipment to be in a preset operating state;

[0023] The detection module is configured to detect the current gas pressure value inside the reaction chamber when the semiconductor process equipment is in the preset operating state for a preset duration.

[0024] The calculation module is configured to calculate the leakage rate of the reaction chamber based on the current air pressure value and the preset air pressure value.

[0025] In some implementations, the detection module is further configured to:

[0026] Detect whether the semiconductor process equipment has completed the preset operating program;

[0027] The vacuum module is configured to evacuate the reaction chamber when the semiconductor process equipment completes the preset operating program.

[0028] In some embodiments, the preset operating program of the semiconductor process equipment is a cleaning program;

[0029] The vacuum module is configured to evacuate the reaction chamber after the cleaning process is completed.

[0030] In some implementations, the control module is specifically configured as follows:

[0031] The stage of the semiconductor process equipment is controlled to operate according to preset actions.

[0032] In some embodiments, the vacuum module includes:

[0033] The vacuum unit is configured to close the inlet valve of the reaction chamber and open the exhaust valve of the reaction chamber to evacuate the reaction chamber.

[0034] The pressure-holding unit is configured to close the exhaust valve when the gas pressure in the reaction chamber reaches the preset gas pressure value, so that the gas pressure in the reaction chamber is maintained at the preset gas pressure value.

[0035] Compared with existing technologies, this invention has significant advantages and beneficial effects. Through the above technical solution, the leak rate detection method and device for the reaction chamber of semiconductor process equipment of this invention achieve considerable technological advancement and practicality, and have broad industrial application value. It possesses at least the following advantages:

[0036] (1) In the process of leak detection of the reaction chamber of semiconductor process equipment, the present invention controls the semiconductor process equipment to operate according to the preset operating state, so that the semiconductor process equipment is still in the normal process operating state when the leak detection is performed, making the leak detection more in line with the real situation, ensuring the authenticity and accuracy of the leak detection of the reaction chamber of semiconductor process equipment, and thereby reducing the defect rate of silicon wafers caused by airtightness problems.

[0037] (2) When the semiconductor process equipment is detected to be in a preset operating program, the present invention starts to perform leakage rate detection of the semiconductor process equipment, avoiding the need to perform leakage rate detection only when the equipment is under maintenance or when the equipment malfunctions, which would lead to untimely leakage rate detection of the semiconductor process equipment. This improves the timeliness of leakage rate detection of the reaction chamber of the semiconductor process equipment, and does not require increasing the downtime of the equipment, thus ensuring the operating efficiency of the equipment.

[0038] The above description is merely an overview of the technical solution of the present invention. In order to better understand the technical means of the present invention and to implement it in accordance with the contents of the specification, and to make the above and other objects, features and advantages of the present invention more apparent and understandable, preferred embodiments are described in detail below with reference to the accompanying drawings. Attached Figure Description

[0039] Figure 1 A schematic flowchart of a method for detecting the leakage rate of a reaction chamber in a semiconductor process apparatus according to an embodiment of the present invention is shown.

[0040] Figure 2 A schematic block diagram of the structure of a reaction chamber of a semiconductor process apparatus according to an embodiment of the present invention is shown;

[0041] Figure 3 A schematic block diagram of a leak rate detection device for a reaction chamber in a semiconductor process apparatus according to an embodiment of the present invention is shown.

[0042] Figure 4 It shows Figure 3 The diagram shown is a schematic block diagram of the vacuum module. Detailed Implementation

[0043] To further illustrate the present invention, the following detailed description, in conjunction with the accompanying drawings, provides a specific embodiment of the leakage rate detection method and device for the reaction chamber of a semiconductor process equipment according to the present invention.

[0044] like Figure 1 As shown, this embodiment of the invention provides a leak rate detection method for a reaction chamber in a semiconductor process equipment, comprising:

[0045] Step S20: Evacuate the reaction chamber of the semiconductor process equipment to bring the gas pressure of the reaction chamber to a preset gas pressure value.

[0046] Specifically, before detecting the leakage rate of the reaction chamber of the semiconductor process equipment, the gas in the reaction chamber of the semiconductor process equipment needs to be extracted, that is, the reaction chamber of the semiconductor process equipment needs to be evacuated so that the gas pressure value in the reaction chamber of the semiconductor process equipment reaches the preset gas pressure value.

[0047] It is understandable that, based on existing technology and methods, it is impossible or very difficult to achieve a completely vacuum state within the reaction chamber. Therefore, the vacuuming described in this invention does not mean creating a complete vacuum state within the reaction chamber, but rather ensuring that the gas pressure within the reaction chamber reaches a preset value.

[0048] The preset air pressure value can be set according to the equipment accuracy, the usage environment, etc., and the present invention does not specifically limit the preset air pressure value.

[0049] In one embodiment, such as Figure 2 As shown, the reaction chamber 1 of the semiconductor process equipment is equipped with an inlet valve 2 and an exhaust valve 3. One end of the exhaust valve 3 is connected to the reaction chamber 1, and the other end is connected to a pump 4, used to extract gas from the reaction chamber 1. A stage 5 is provided inside the reaction chamber 1 to support the silicon wafer placed inside the reaction chamber 1. A barometer 6 is connected inside the reaction chamber 1 to detect the gas pressure value inside the reaction chamber 1.

[0050] In this embodiment, step S20 specifically includes: closing the air inlet valve of the reaction chamber, opening the air outlet valve of the reaction chamber, and evacuating the reaction chamber; when the air pressure in the reaction chamber reaches the preset air pressure value, closing the air outlet valve so that the air pressure in the reaction chamber is maintained at the preset air pressure value.

[0051] Specifically, when performing leak rate detection on the reaction chamber of semiconductor process equipment, the inlet valve on the reaction chamber is first closed, and the exhaust valve is opened. A pump connected to the exhaust valve is used to evacuate the reaction chamber. During the evacuation process, a barometer connected to the reaction chamber is used to detect the pressure value inside the reaction chamber. When the pressure value inside the reaction chamber reaches a preset pressure value, the evacuation is stopped and the exhaust valve is closed to maintain the pressure inside the reaction chamber at the preset pressure value.

[0052] Step S30: Control the semiconductor process equipment to be in a preset operating state.

[0053] It is known that the impact on the airtightness of the reaction chamber differs when the semiconductor process equipment is in operation versus when it is stationary. Furthermore, when detecting the leak rate of the reaction chamber in a semiconductor process equipment, keeping the equipment stationary can affect the accuracy and reliability of the leak rate detection.

[0054] Based on this, when detecting the leakage rate of the reaction chamber of a semiconductor process equipment, the present invention controls the semiconductor process equipment to always be in a preset operating state. In other words, when detecting the leakage rate of the reaction chamber of a semiconductor process equipment, the semiconductor process equipment is always in a simulated operating state, which can be more realistic and ensure the authenticity and accuracy of the leakage rate detection of the reaction chamber of the semiconductor process equipment.

[0055] In one embodiment, the preset operating state refers to the stage within the reaction chamber of the semiconductor process equipment being in operation. For example, controlling the stage to rotate or rise, or simultaneously controlling both rotation and rise. This simulates the actual operating state of the semiconductor process equipment, making leak rate detection of the reaction chamber more closely resemble real-world conditions.

[0056] Step S40: When the semiconductor process equipment has been in a preset operating state for a preset duration, the current gas pressure value in the reaction chamber is detected.

[0057] Specifically, after the reaction chamber of the semiconductor process equipment is evacuated and the semiconductor process equipment is controlled to run in a preset operating state for a preset time, the current gas pressure value in the reaction chamber of the semiconductor process equipment is detected by a barometer.

[0058] The preset duration of this embodiment can be set according to the environment of the semiconductor process equipment and the equipment precision, etc., and the present invention is not limited to a specific duration.

[0059] Step S50: Calculate the leakage rate of the reaction chamber based on the current air pressure value and the preset air pressure value.

[0060] After the semiconductor process equipment has been running in a preset operating state for a preset time, the current gas pressure value detected in the reaction chamber is obtained. When the reaction chamber of the semiconductor process equipment is evacuated, the gas pressure value in the reaction chamber is controlled to reach the preset gas pressure value.

[0061] Then, the leakage rate of the reaction chamber of the semiconductor process equipment is calculated based on the change in the current air pressure value compared to the preset air pressure value.

[0062] In one embodiment, such as Figure 1 As shown, step S10 is included before step S20. Step S10 detects whether the semiconductor process equipment has completed the preset running program.

[0063] If the semiconductor process equipment is detected to have completed the preset running program (i.e., after the preset running program has finished running), then step S20 is executed. If the semiconductor process equipment is detected to have not completed the preset running program, then step S10 is executed repeatedly.

[0064] Typically, leakage rate detection of the reaction chambers in semiconductor process equipment is performed during equipment maintenance or when equipment malfunctions, which cannot guarantee the timeliness of leakage rate detection and thus affects the yield of silicon wafers.

[0065] The present invention detects the leakage rate of the reaction chamber of the semiconductor process equipment when the equipment is in normal operation (i.e., the preset operation program has ended), which will not affect the normal operation of the semiconductor process equipment and can ensure the timeliness of leakage rate detection.

[0066] It is known that during the operation of semiconductor process equipment, especially in thin film deposition processes, films will also be deposited on the walls of the reaction chamber and electrodes. Therefore, after a certain period of operation, a cleaning process is required to remove the deposited films inside the reaction chamber to ensure its cleanliness.

[0067] Therefore, the leak rate detection of the reaction chamber of the semiconductor process equipment of the present invention is set after the cleaning program (i.e., the preset running program) is completed. Performing leak rate detection after the cleaning program is completed eliminates the need for a separate shutdown for leak rate detection, while ensuring the timeliness of the detection.

[0068] The leak rate detection of the present invention is set after the cleaning process is completed. When the cleaning process of the semiconductor process equipment is detected to be completed, step S20 is controlled to be executed to complete the leak rate detection of the reaction chamber of the semiconductor process equipment.

[0069] like Figure 3 As shown, this embodiment of the invention also provides a leak rate detection device for a reaction chamber of a semiconductor process equipment. The device includes: a vacuum module 10, a control module 20, a detection module 30, and a calculation module 40.

[0070] The vacuum module 10 is configured to evacuate the reaction chamber of the semiconductor process equipment so that the gas pressure value of the reaction chamber is at a preset gas pressure value.

[0071] Specifically, before detecting the leakage rate of the reaction chamber of the semiconductor process equipment, the vacuum module 10 needs to extract the gas from the reaction chamber of the semiconductor process equipment, that is, to perform vacuum treatment on the reaction chamber of the semiconductor process equipment so that the gas pressure value in the reaction chamber of the semiconductor process equipment reaches the preset gas pressure value.

[0072] It is understandable that, based on existing technology and methods, it is impossible to achieve a completely vacuum state within the reaction chamber. Therefore, the vacuuming described in this invention does not mean creating a completely vacuum state within the reaction chamber, but rather ensuring that the gas pressure within the reaction chamber reaches a preset value.

[0073] The preset air pressure value can be set according to the equipment accuracy, the usage environment, etc., and the present invention does not specifically limit the preset air pressure value.

[0074] In one embodiment, such as Figure 2 As shown, the reaction chamber of the semiconductor process equipment is equipped with an inlet valve and an exhaust valve. One end of the exhaust valve is connected to the reaction chamber, and the other end is connected to a pump to extract gas from the reaction chamber. A stage is installed inside the reaction chamber to support the silicon wafer placed inside. A barometer is connected inside the reaction chamber to detect the gas pressure value inside the reaction chamber.

[0075] In this embodiment, such as Figure 4 As shown, the vacuum module 10 specifically includes a vacuum pumping unit 101 and a pressure holding unit 102.

[0076] The vacuum pumping unit 101 is configured to close the inlet valve of the reaction chamber and open the exhaust valve of the reaction chamber to evacuate the reaction chamber. The pressure holding unit 102 is configured to close the exhaust valve when the gas pressure in the reaction chamber reaches the preset gas pressure value, so that the gas pressure in the reaction chamber is maintained at the preset gas pressure value.

[0077] Specifically, when performing leak rate detection on the reaction chamber of semiconductor process equipment, the vacuum pumping unit 101 first closes the inlet valve on the reaction chamber and opens the exhaust valve, then uses a pump connected to the exhaust valve to evacuate the reaction chamber. During the vacuuming process, a barometer connected to the reaction chamber detects the pressure value inside the reaction chamber. When the pressure value inside the reaction chamber reaches a preset pressure value, the pressure holding unit 102 controls the pumping to stop and closes the exhaust valve, so that the pressure inside the reaction chamber is maintained at the preset pressure value.

[0078] The control module 20 is configured to control the semiconductor process equipment to be in a preset operating state.

[0079] It is known that the impact on the airtightness of the reaction chamber differs when the semiconductor process equipment is in operation versus when it is stationary. Furthermore, when detecting the leak rate of the reaction chamber in a semiconductor process equipment, keeping the equipment stationary can affect the accuracy and reliability of the leak rate detection.

[0080] Based on this, when detecting the leakage rate of the reaction chamber of the semiconductor process equipment, the control module 20 controls the semiconductor process equipment to always be in a preset operating state. In other words, when detecting the leakage rate of the reaction chamber of the semiconductor process equipment, the semiconductor process equipment is always in a simulated operating state, which can be more realistic and ensure the authenticity and accuracy of the leakage rate detection of the reaction chamber of the semiconductor process equipment.

[0081] In one embodiment, the preset operating state refers to the stage within the reaction chamber of the semiconductor process equipment being in operation. For example, controlling the stage to rotate or rise, or simultaneously controlling both rotation and rise. This simulates the actual operating state of the semiconductor process equipment, making leak rate detection of the reaction chamber more closely resemble real-world conditions.

[0082] The detection module 30 is configured to detect the current gas pressure value inside the reaction chamber when the semiconductor process equipment is in a preset operating state for a preset duration.

[0083] Specifically, after the reaction chamber of the semiconductor process equipment is evacuated and the semiconductor process equipment is controlled to run in a preset operating state for a preset duration, the detection module 30 detects the current gas pressure value in the reaction chamber of the semiconductor process equipment through a barometer.

[0084] The preset duration of this embodiment can be set according to the environment of the semiconductor process equipment and the equipment precision, etc., and the present invention is not limited to a specific duration.

[0085] The calculation module 40 is configured to calculate the leakage rate of the reaction chamber based on the current air pressure value and the preset air pressure value.

[0086] The control module 20 acquires the current gas pressure value detected in the reaction chamber after controlling the semiconductor process equipment to run in the preset operating state for a preset time, and the gas pressure value in the reaction chamber is controlled to reach the preset gas pressure value when the reaction chamber of the semiconductor process equipment is evacuated.

[0087] Then, the calculation module 40 calculates the leakage rate of the reaction chamber of the semiconductor process equipment based on the change in the current air pressure value compared to the preset air pressure value.

[0088] In one embodiment, the detection module 30 is further configured to detect whether the semiconductor process equipment has completed a preset operating program. The vacuum module 10 is configured to evacuate the reaction chamber when the semiconductor process equipment completes the preset operating program.

[0089] Typically, leakage rate detection of the reaction chambers in semiconductor process equipment is performed during equipment maintenance or when equipment malfunctions, which cannot guarantee the timeliness of leakage rate detection and thus affects the yield of silicon wafers.

[0090] The present invention detects the leakage rate of the reaction chamber of the semiconductor process equipment when the equipment is in normal operation (i.e., the preset operation program has ended), which will not affect the normal operation of the semiconductor process equipment and can ensure the timeliness of leakage rate detection.

[0091] It is known that during the operation of semiconductor process equipment, especially in thin film deposition processes, films will also be deposited on the walls of the reaction chamber and electrodes. Therefore, after a certain period of operation, a cleaning process is required to remove the deposited films inside the reaction chamber to ensure its cleanliness.

[0092] Therefore, the leak rate detection of the reaction chamber of the semiconductor process equipment of the present invention is set after the cleaning program (i.e., the preset running program) is completed. Performing leak rate detection after the cleaning program is completed eliminates the need for a separate shutdown for leak rate detection, while ensuring the timeliness of the detection.

[0093] The leak rate detection of the present invention is set after the cleaning process is completed. When the detection module 30 detects that the cleaning process of the semiconductor process equipment is completed, the vacuum module 10 controls the vacuuming of the reaction chamber of the semiconductor process equipment to complete the leak rate detection of the reaction chamber of the semiconductor process equipment.

[0094] The above description is merely a preferred embodiment of the present invention and is not intended to limit the present invention in any way. Although the present invention has been disclosed above with reference to preferred embodiments, it is not intended to limit the present invention. Any person skilled in the art can make some modifications or alterations to the above-disclosed technical content to create equivalent embodiments without departing from the scope of the present invention. Any simple modifications, equivalent changes, and alterations made to the above embodiments based on the technical essence of the present invention without departing from the scope of the present invention shall still fall within the scope of the present invention.

Claims

1. A method for detecting the leakage rate of a reaction chamber in a semiconductor process equipment, characterized in that, include: The reaction chamber of the semiconductor process equipment is evacuated so that the gas pressure value of the reaction chamber is at a preset gas pressure value; The stage of the semiconductor process equipment is controlled to operate according to preset actions to simulate the actual operating state of the semiconductor process equipment; When the stage of the semiconductor process equipment operates according to the preset actions for a preset time, the current gas pressure value inside the reaction chamber is detected; The leakage rate of the reaction chamber is calculated based on the current air pressure value and the preset air pressure value.

2. The leakage rate detection method for the reaction chamber of semiconductor process equipment according to claim 1, characterized in that, Also includes: Detect whether the semiconductor process equipment has completed the preset operating program; If so, then the step of evacuating the reaction chamber of the semiconductor process equipment to bring the gas pressure value of the reaction chamber to a preset gas pressure value is performed.

3. The leakage rate detection method for the reaction chamber of semiconductor process equipment according to claim 2, characterized in that, The preset operating program of the semiconductor process equipment is a cleaning program; After the cleaning procedure is completed, the step of evacuating the reaction chamber of the semiconductor process equipment is performed so that the gas pressure value of the reaction chamber is at a preset gas pressure value.

4. The leakage rate detection method for the reaction chamber of semiconductor process equipment according to claim 1, characterized in that, The step of evacuating the reaction chamber of the semiconductor process equipment to bring the gas pressure of the reaction chamber to a preset gas pressure value includes: Close the air inlet valve of the reaction chamber and open the air outlet valve of the reaction chamber to evacuate the reaction chamber; When the gas pressure in the reaction chamber reaches the preset gas pressure value, the exhaust valve is closed so that the gas pressure in the reaction chamber remains at the preset gas pressure value.

5. A leak rate detection device for a reaction chamber in semiconductor process equipment, characterized in that, include: The vacuum module is configured to evacuate the reaction chamber of the semiconductor process equipment so that the gas pressure value of the reaction chamber is at a preset gas pressure value. The control module is configured to control the stage of the semiconductor process equipment to operate according to preset actions, so as to simulate the actual operating state of the semiconductor process equipment; The detection module is configured to detect the current gas pressure value inside the reaction chamber when the stage of the semiconductor process equipment operates according to a preset action for a preset time. The calculation module is configured to calculate the leakage rate of the reaction chamber based on the current air pressure value and the preset air pressure value.

6. The leakage rate detection device for the reaction chamber of semiconductor process equipment according to claim 5, characterized in that, The detection module is also configured to: Detect whether the semiconductor process equipment has completed the preset operating program; The vacuum module is configured to evacuate the reaction chamber when the semiconductor process equipment completes the preset operating program.

7. The leakage rate detection device for the reaction chamber of semiconductor process equipment according to claim 6, characterized in that, The preset operating program of the semiconductor process equipment is a cleaning program; The vacuum module is configured to evacuate the reaction chamber after the cleaning process is completed.

8. The leakage rate detection device for the reaction chamber of semiconductor process equipment according to claim 5, characterized in that, The vacuum module includes: The vacuum unit is configured to close the inlet valve of the reaction chamber and open the exhaust valve of the reaction chamber to evacuate the reaction chamber. The pressure-holding unit is configured to close the exhaust valve when the gas pressure in the reaction chamber reaches the preset gas pressure value, so that the gas pressure in the reaction chamber is maintained at the preset gas pressure value.

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