Wafer processing method and wafer processing system

Abstract

This disclosure relates to a wafer processing method and system. The method includes: gripping a wafer assembly, the wafer assembly including a support frame and a wafer; moving the wafer assembly to a designated position within a processing tank, such that the support frame is connected to a first support mechanism, and the bottom of the wafer within the support frame is supported on a second support mechanism through a clearance opening at the bottom of the support frame; filling the processing tank with drying gas based on a drying command, and driving the first support mechanism to descend and / or driving the second support mechanism to rise; when the separation gap between the support frame and the wafer is greater than a preset gap value, driving an expansion shaft to move horizontally between the wafer and the support frame; when the gap between the expansion shaft and the wafer is greater than the minimum expansion size of the expansion shaft, controlling the expansion shaft to expand so that the expansion shaft contacts the wafer; when the expansion shaft contacts the wafer, driving the expansion shaft to rotate, thereby causing the wafer to rotate. This solution can improve wafer drying efficiency and drying effect.

Description

Technical Field

[0001] This disclosure pertains to the field of chip manufacturing, specifically relating to a wafer processing method and a wafer processing system. Background Technology

[0002] Currently, in the chip manufacturing process, cleaning and drying processes are commonly used to process wafers. The cleaning process mainly removes impurities such as particles and natural oxide films from the wafer, while the drying process mainly dries the wafer after the cleaning process. However, existing drying methods are inefficient and easily leave watermarks on the dried wafer. Summary of the Invention

[0003] The purpose of this disclosure is to provide a wafer processing method and a wafer processing system to improve drying efficiency and reduce residual watermarks on wafers.

[0004] The first aspect of this disclosure provides a wafer processing method, comprising:

[0005] A wafer assembly is gripped, the wafer assembly including a support frame and a wafer, the support frame having a first locking position, the wafer standing upright at the first locking position, and the bottom of the support frame having a clearance opening that exposes the bottom of the wafer;

[0006] The wafer assembly is moved to a designated position within the processing tank so that the support frame is connected to the first support mechanism, and the bottom of the wafer within the support frame is supported on the second support mechanism through the clearance opening.

[0007] Drying gas is introduced into the processing tank based on the drying command, and the first support mechanism is driven to descend and / or the second support mechanism is driven to rise, so that the support frame is separated from the wafer.

[0008] When the separation gap between the support frame and the wafer is greater than a preset gap value, the expansion shaft is driven to move horizontally between the wafer and the support frame, and there is a gap between the expansion shaft and the wafer;

[0009] When the gap between the expansion shaft and the wafer is greater than the minimum expansion size of the expansion shaft, the expansion shaft is controlled to expand so that the expansion shaft contacts the wafer;

[0010] When the expansion shaft comes into contact with the wafer, the expansion shaft is driven to rotate, thereby causing the wafer to rotate.

[0011] In one exemplary embodiment of this disclosure, after the wafer assembly is moved to a designated position within the processing tank, and before the processing tank is filled with drying gas based on a drying command, and the first support mechanism is driven to descend and / or the second support mechanism is driven to rise, the wafer processing method further includes:

[0012] Move the cover plate to the top of the processing tank, and align the second locking position on the bottom surface of the cover plate with the first locking position of the support frame.

[0013] In one exemplary embodiment of this disclosure, driving the first support mechanism to descend and / or driving the second support mechanism to rise based on a drying command includes:

[0014] Based on the drying command, the second support mechanism is driven to rise a first distance so that the top of the wafer on the second support mechanism is engaged in the second locking position;

[0015] Based on the drying command, the first support mechanism is driven to descend a second distance so that the separation gap between the support frame and the wafer is greater than a preset gap value.

[0016] In one exemplary embodiment of this disclosure, after moving the wafer assembly to a designated position within the processing tank and before moving the cover plate to the top of the processing tank, the wafer processing method further includes:

[0017] Cleaning fluid is injected into the treatment tank based on the cleaning command;

[0018] When the cleaning fluid in the treatment tank reaches the target level, the injection of cleaning fluid into the treatment tank shall be stopped.

[0019] The target liquid level is higher than the top of the wafer, and there is a gap between the cover plate and the second locking position when the cover plate is moved to the top of the processing tank.

[0020] In one exemplary embodiment of this disclosure, after the cover plate is moved to the top of the processing tank, and before the processing tank is filled with drying gas based on a drying command, and the first support mechanism is driven to descend and / or the second support mechanism is driven to rise, the wafer processing method further includes:

[0021] The wafer assembly is cleaned using the cleaning solution in the processing tank;

[0022] After the cleaning time reaches the target time, the drain port of the treatment tank is opened to allow the cleaning solution in the treatment tank to be discharged through the drain port.

[0023] In one exemplary embodiment of this disclosure, the drying command is triggered after the drain port of the processing tank is opened and the cleaning liquid level in the processing tank is lower than that of the wafer.

[0024] In one exemplary embodiment of this disclosure, the driving expansion and contraction shafts are moved horizontally between the wafer and the support frame, which includes: driving two expansion and contraction shafts to move horizontally simultaneously and move them between the wafer and the support frame, and located on both sides of the second support mechanism.

[0025] In one exemplary embodiment of this disclosure, controlling the expansion shaft to expand includes: filling the expansion shaft with gas to cause it to expand.

[0026] A second aspect of this disclosure provides a wafer processing system comprising:

[0027] Processing tank;

[0028] An expansion shaft, which mates with the processing groove;

[0029] The first support mechanism and the second support mechanism are installed inside the processing tank;

[0030] A wafer processing apparatus, connected to the expansion and contraction shaft, the first support mechanism, and the second support mechanism, is used to implement the wafer processing method described in any one of the above embodiments.

[0031] In one exemplary embodiment of this disclosure, the wafer processing system further includes a cover plate, the bottom surface of which is provided with a second locking slot; wherein,

[0032] The bottom of the treatment tank is provided with a drain port for discharging the cleaning fluid.

[0033] The wafer processing method and wafer processing system disclosed in this disclosure have the following beneficial effects:

[0034] In this disclosure, drying gas can be introduced into the processing tank based on a drying command. Furthermore, the support frame can be separated from the wafer by driving at least one of the first and second support mechanisms to move. This allows the wafer to be fully exposed to the drying gas in the processing tank without being obstructed by the support frame, thereby improving the wafer drying efficiency. In addition, the separation of the support frame from the wafer also allows the inner surface of the support frame to be fully exposed to the drying gas in the processing tank, thereby avoiding or mitigating the situation of water stains remaining on the support frame. This, in turn, avoids or improves the situation of watermarks caused by secondary contamination of the dried wafer by water stains remaining on the support frame, thus improving the wafer processing effect.

[0035] In this process, when the separation gap between the support frame and the wafer is greater than a preset gap value, the expansion shaft is driven to move horizontally between the wafer and the support frame. At this time, there is a gap between the expansion shaft and the wafer, which can prevent the expansion shaft from hitting the wafer and damaging it when it extends horizontally. Then, when the gap between the expansion shaft and the wafer is greater than the minimum expansion size of the expansion shaft, the expansion shaft is controlled to expand so that it contacts the wafer. At this time, the expansion shaft can support the wafer. In addition, when the expansion shaft contacts the wafer, it can also be driven to rotate, thereby causing the wafer to rotate. This makes the drying of the wafer more uniform and improves the drying efficiency of the wafer.

[0036] Other features and advantages of this disclosure will become apparent from the following detailed description, or may be learned in part from practice of this disclosure.

[0037] It should be understood that the above general description and the following detailed description are exemplary and explanatory only, and are not intended to limit this disclosure. Attached Figure Description

[0038] The accompanying drawings, which are incorporated in and form part of this specification, illustrate embodiments consistent with this disclosure and, together with the description, serve to explain the principles of this disclosure. It is obvious that the drawings described below are merely some embodiments of this disclosure, and those skilled in the art can obtain other drawings based on these drawings without any inventive effort.

[0039] Figure 1 A schematic flowchart of the wafer processing method according to Embodiment 1 of this disclosure is shown;

[0040] Figure 2 A cross-sectional schematic diagram of the wafer assembly according to an embodiment of the present disclosure is shown;

[0041] Figure 3 This diagram shows a structural schematic corresponding to step S200 in the wafer processing method according to Embodiment 1 of this disclosure;

[0042] Figure 4 This diagram shows a structural schematic corresponding to step S300 in the wafer processing method according to Embodiment 1 of this disclosure;

[0043] Figure 5 A schematic diagram of the structure corresponding to step S400 in the wafer processing method according to Embodiment 1 of this disclosure is shown;

[0044] Figure 6 A schematic diagram of the structure corresponding to step S500 in the wafer processing method according to Embodiment 1 of this disclosure is shown;

[0045] Figure 7A structural block diagram of the wafer processing system according to Embodiment 2 of this disclosure is shown.

[0046] Explanation of reference numerals in the attached figures:

[0047] 10. Support frame; 10a. First clamping position; 11. Wafer; 12. Processing tank; 13. First support mechanism; 14. Second support mechanism; 15. Cover plate; 15a. Second clamping position; 16. Expansion shaft; 160. Main shaft; 161. Airbag; 17. Wafer processing device. Detailed Implementation

[0048] Exemplary embodiments will now be described more fully with reference to the accompanying drawings. However, these exemplary embodiments can be implemented in many forms and should not be construed as limited to the examples set forth herein; rather, these embodiments are provided so that this disclosure will be more thorough and complete, and will fully convey the concept of the exemplary embodiments to those skilled in the art.

[0049] Furthermore, the described features, structures, or characteristics can be combined in any suitable manner in one or more embodiments. Numerous specific details are provided in the following description to give a thorough understanding of embodiments of this disclosure. However, those skilled in the art will recognize that the technical solutions of this disclosure can be practiced without one or more of the specific details, or other methods, components, apparatuses, steps, etc., may be employed. In other instances, well-known methods, apparatuses, implementations, or operations are not shown or described in detail to avoid obscuring various aspects of this disclosure.

[0050] The present disclosure will now be described in further detail with reference to the accompanying drawings and specific embodiments. It should be noted that the technical features involved in the various embodiments of the present disclosure described below can be combined with each other as long as they do not conflict with each other. The embodiments described below with reference to the accompanying drawings are exemplary and intended to explain the present disclosure, and should not be construed as limiting the present disclosure.

[0051] Example 1

[0052] This disclosure provides a wafer processing method, such as... Figure 1 As shown, it includes steps S100, S200, S300, S400, S500, and S600, wherein:

[0053] In step S100, the wafer assembly is picked up, such as... Figure 2 As shown, the wafer assembly may include a support frame 10 and a wafer 11. The support frame 10 has a first locking position 10a, the wafer 11 is erected at the first locking position 10a, and the bottom of the support frame 10 has a clearance opening that exposes the bottom of the wafer 11.

[0054] For example, the support frame 10 of this wafer assembly may have multiple first slots 10a, with a wafer 11 erected at each first slot 10a. However, it is not limited to this; the support frame 10 may also have only one first slot 10a, that is, each support frame 10 is used to support one wafer 11.

[0055] The embodiments disclosed herein are mainly illustrated by taking the wafer assembly support frame 10 having a plurality of first slots 10a, with a wafer 11 erected at each first slot 10a.

[0056] In this embodiment, the wafer assembly can be assembled automatically. For example, the method for assembling the wafer assembly may include:

[0057] First, the empty support frame 10 is moved to the loading position of the machine. The support frame 10 may include a ring-shaped side panel and a bottom plate at the bottom of the side panel. The bottom plate has a clearance opening in the central area. The side panel includes a plurality of first locking positions 10a spaced apart in the first direction. It should be understood that the two opposite inner surfaces of the side panel in the second direction are provided with slots to form the first locking positions 10a.

[0058] Then, the wafer 11 is grasped and vertically inserted from the top of the side panel into the first locking position 10a, that is, the two ends of the wafer 11 in the second direction are located in the locking slots of the side panel to ensure that the wafer 11 is stably locked in the support frame 10.

[0059] Afterwards, a wafer 11 is erected at each of the first slots 10a of the support frame 10, thus forming a wafer assembly.

[0060] In this embodiment, the multiple first locking positions 10a of the side panel are spaced apart in a first direction. This allows each wafer 11 supported in the support frame 10 to be inserted into the first locking position 10a in a corresponding manner, while remaining spaced apart from each other, facilitating subsequent overall cleaning and drying. The aforementioned first direction can be understood as the axial direction of the wafer 11, and the second direction can be understood as the radial direction of the wafer 11. Both the axial and radial directions are perpendicular to the vertical direction Z.

[0061] In step S200, the wafer assembly is moved to a designated position within the processing tank 12, so that the support frame 10 is connected to the first support mechanism 13, and the bottom of the wafer 11 within the support frame 10 is supported on the second support mechanism 14 through a clearance opening. Figure 3 As shown.

[0062] For example, the support frame 10 and the first support mechanism 13 can be connected magnetically, but are not limited to this; they can also be connected by clamping. For instance, the first support mechanism 13 includes two clamping plates that clamp the support frame 10 when the wafer assembly moves to a designated position within the processing tank 12. The second support mechanism 14 can be located below the wafer 11. The second support mechanism 14 makes line contact with the wafer 11. This design allows the second support mechanism 14 to support the wafer 11 while reducing the contact area between the second support mechanism 14 and the wafer 11, facilitating subsequent cleaning and drying of the wafer 11.

[0063] In step S300, drying gas is introduced into the processing tank 12 based on a drying command, and the first support mechanism 13 is driven to descend and / or the second support mechanism 14 is driven to rise, so that the support frame 10 is separated from the wafer 11. Figure 4 As shown.

[0064] In other words, during the drying process in this embodiment, while filling the processing tank 12 with drying gas, the first support mechanism 13 can be driven to descend and the second support mechanism 14 can be driven to rise, so that the support frame 10 is separated from the wafer 11. This allows the wafer 11 to be fully exposed to the drying gas in the processing tank 12 without being obstructed by the support frame 10, thereby improving the drying efficiency of the wafer 11. In addition, the separation of the support frame 10 from the wafer 11 also allows the inner surface of the support frame 10 to be fully exposed to the drying gas in the processing tank 12, thereby avoiding or mitigating the situation of water stains remaining on the support frame 10. This, in turn, avoids or improves the situation of watermarks caused by secondary contamination of the dried wafer 11 by water stains remaining on the support frame 10, thus improving the processing effect of the wafer 11.

[0065] For example, the drying gas in this embodiment can be a hot gas mixture of IPA (isopropanol) and N2 (nitrogen) to achieve the purpose of drying the wafer 11 and the support frame 10.

[0066] For example, after step S200 and before step S300, the wafer processing method further includes:

[0067] Step S250: Move the cover plate 15 to the top of the processing groove 12, and align the second locking position 15a on the bottom surface of the cover plate 15 with the first locking position 10a of the support frame 10, as shown. Figure 4 As shown.

[0068] In this embodiment, the gripped wafer assembly can be fed into a designated position in the processing tank 12 through the top opening of the processing tank 12 for drying. Since drying gas needs to be filled into the processing tank 12 during the drying process, in order to ensure the drying environment in the processing tank 12 and improve the drying efficiency, the cover plate 15 can be moved to the top of the processing tank 12 to seal the top opening of the processing tank 12.

[0069] The cover plate 15 has a second locking position 15a on its bottom surface. When the cover plate 15 moves to the top of the processing tank 12 to cover the processing tank 12, the second locking position 15a on the bottom surface of the cover plate 15 can be opposite to the first locking position 10a of the support frame 10 in the vertical Z direction. It should be understood that this second locking position 15a can also be a slot, so as to play the same role as the first locking position 10a, to limit the displacement of the wafer 11 in the axial and radial directions. When there are multiple first locking positions 10a, there can also be multiple second locking positions 15a, and they are set one to one.

[0070] The step S300, which mentions driving the first support mechanism 13 to descend and / or driving the second support mechanism 14 to rise based on a drying command, may specifically include:

[0071] Step S3001: Based on the drying command, drive the second support mechanism 14 to rise a first distance so that the top of the wafer 11 on the second support mechanism 14 is engaged in the second locking position 15a;

[0072] Step S3002: Based on the drying command, drive the first support mechanism 13 to descend a second distance so that the separation gap between the support frame 10 and the wafer 11 is greater than the preset gap value.

[0073] In other words, this embodiment achieves separation of the support frame 10 from the wafer 11 by adjusting the positions of the first support mechanism 13 and the second support mechanism 14, thereby improving work efficiency. Furthermore, during the separation process of the support frame 10 and the wafer 11, the wafer 11, driven by the second support mechanism 14, can have its top engaged in the second locking position 15a. The combined action of the second locking position 15a and the second support mechanism 14 ensures that the wafer 11 is stably supported on the second support mechanism 14.

[0074] It should be noted that when the second locking slot 15a is inserted into the top of the wafer 11, there can be a gap between the top of the wafer 11 and the second locking slot 15a to alleviate the wear of the wafer 11.

[0075] For example, the descent of the first support mechanism 13 and the rise of the second support mechanism 14 can start simultaneously. That is, while the second support mechanism 14 is driven to rise based on the drying command, the first support mechanism 13 is also driven to fall based on the drying command. This can further improve the speed of separation between the support frame 10 and the wafer 11.

[0076] The first distance at which the second support mechanism 14 rises can be less than the second distance at which the first support mechanism 13 falls, so as to ensure that before the wafer 11 is completely separated from the support frame 10, the top of the wafer 11 is first inserted into the second locking position 15a, so as to ensure the overall support stability of the wafer 11.

[0077] For example, after step S200 and before step S250, the wafer processing method may further include:

[0078] Step S210: Inject cleaning fluid into the treatment tank 12 based on the cleaning command;

[0079] Step S230: When the cleaning fluid in the treatment tank 12 reaches the target level, stop injecting the cleaning fluid into the treatment tank 12.

[0080] The target liquid level is higher than the top of the wafer 11, and there is a gap between the cover plate 15 and the second locking position 15a when the cover plate 15 is moved to the top of the processing tank 12.

[0081] In this embodiment, before sealing the processing tank 12 with the cover plate 15, a target amount of cleaning solution is injected into the processing tank 12 so that the cleaning solution is higher than the top of the wafer 11, that is, the wafer 11 is completely immersed in the cleaning solution for subsequent cleaning. Furthermore, by injecting the cleaning solution into the processing tank 12 first and then sealing the top of the processing tank 12 with the cover plate 15, compared to sealing the top of the processing tank 12 with the cover plate 15 first and then injecting the cleaning solution, this embodiment avoids or reduces the possibility of the second locking position 15a of the cover plate 15 getting wet with the cleaning solution, thereby ensuring the subsequent drying effect and drying efficiency of the wafer 11.

[0082] For example, after step S250 and before step S300, the wafer processing method further includes:

[0083] Step S270: Clean the wafer assembly using the cleaning solution in the processing tank 12; for example, the cleaning solution in the processing tank 12 can be agitated using an oscillator to clean the wafer assembly.

[0084] In step S290, after the cleaning time reaches the target duration, the drain port of the treatment tank 12 is opened to allow the cleaning solution in the treatment tank 12 to be discharged through the drain port, i.e., to achieve an automatic drainage process. It should be understood that, in order to ensure more thorough drainage, this drain port can be located at the bottom of the treatment tank 12.

[0085] Furthermore, in this embodiment, after the drain port of the control processing tank 12 is opened and the cleaning liquid level in the processing tank 12 is lower than that of the wafer 11, a drying command can be triggered. In other words, the drying command during the drying process is automatically generated after the drain port is opened and the cleaning liquid level in the processing tank 12 is lower than that of the wafer 11. This can improve the automation of the wafer 11 processing program.

[0086] The drying command is generated only when the cleaning liquid level in the processing tank 12 is lower than that of the wafer 11. This allows the drying gas to be sprayed directly onto the surface of the wafer 11, thereby improving the drying efficiency of the wafer 11.

[0087] It should be understood that this drying instruction can be generated after the cleaning liquid in the treatment tank 12 has been completely drained, or it can be generated during the draining process, depending on the specific circumstances.

[0088] Based on the above, in this embodiment, the wafer assembly is first placed in the designated position in the processing tank 12, and then the cleaning fluid is injected. When the height of the cleaning fluid meets the requirements, the cover plate 15 is moved to the top of the processing tank 12, and then the cleaning and draining process is carried out. After the draining is completed or during the draining process, the drying procedure is carried out.

[0089] Furthermore, in addition to using the aforementioned drying gas to dry the wafer 11, this embodiment can also assist in drying by driving the wafer 11 to rotate, so as to improve the drying efficiency. Specifically, it includes steps S400, S500 and S600.

[0090] In step S400, when the separation gap between the support frame 10 and the wafer 11 is greater than a preset gap value, the expansion shaft 16 is driven to move horizontally between the wafer 11 and the support frame 10. At this time, there is a gap between the expansion shaft 16 and the wafer 11. Figure 5 As shown, this avoids the situation where the expansion shaft 16 hits the wafer 11 when it extends horizontally, thus preventing damage to the wafer 11.

[0091] It should be understood that this preset gap can be the maximum size of the expansion shaft 16 in the contracted state.

[0092] For example, step S400 may specifically include: driving the two expansion shafts 16 to move horizontally simultaneously and move them between the wafer 11 and the support frame 10, and located on both sides of the second support mechanism 14. This can ensure that the force is more uniform when the wafer 11 is driven to rotate by the expansion shafts 16, so as to avoid damage to the wafer 11 due to uneven force during rotation. In addition, it can also ensure the support stability when the wafer 11 rotates.

[0093] In step S500, when the gap between the expansion shaft 16 and the wafer 11 is greater than the minimum expansion size of the expansion shaft 16, the expansion shaft 16 is controlled to expand so that the expansion shaft 16 contacts the wafer 11. Figure 6 As shown; in this embodiment, the expansion shaft 16 is expanded by controlling it to contact the wafer 11. This adjustment method is simple and the contact with the wafer 11 is relatively gentle, so as to avoid or alleviate the damage to the wafer 11 during the adjustment of the contact with the wafer 11.

[0094] It should be understood that when the gap between the expansion shaft 16 and the wafer 11 is detected to be less than the minimum expansion size of the expansion shaft 16, the horizontal extension position of the expansion shaft 16 can be adjusted downward; in addition, when the gap between the expansion shaft 16 and the wafer 11 is detected to be greater than the maximum expansion size of the expansion shaft 16, the horizontal extension position of the lower expansion shaft 16 can be adjusted upward.

[0095] For example, the expansion shaft 16 in this embodiment can be an inflatable structure. That is, controlling the expansion shaft 16 to expand can specifically include: filling the expansion shaft 16 with gas to make it expand. Specifically, the expansion shaft 16 can include a main shaft 160 and an air bladder 161 sleeved on the outside of the main shaft 160. By filling the air bladder 161 with gas, it expands. It should be understood that the inflated air bladder 161 is cylindrical. In this embodiment, the gas can be slowly filled to make it expand. This ensures that the expansion shaft 16 is in contact with the wafer 11, and can further avoid or mitigate the possibility of damage to the wafer 11 during the adjustment of the contact with the wafer 11.

[0096] In step S600, when the expansion shaft 16 contacts the wafer 11, the expansion shaft 16 is driven to rotate, thereby causing the wafer 11 to rotate. This can drive the gas flow around the wafer 11, thereby improving the drying efficiency. In addition, by making the wafer 11 rotate, it can also avoid the situation where the part of the wafer 11 stuck in the second clamping position 15a is not dried sufficiently, that is, to ensure the uniformity of drying in all parts of the wafer 11 and improve the drying effect.

[0097] It should be understood that in this embodiment, the expansion and contraction shaft 16 is parallel to the axis of the wafer 11, and each expansion and contraction shaft 16 can correspond to multiple wafer assemblies. This allows the expansion and contraction shaft 16 to contact more wafers 11 at the same time, so as to drive multiple wafers 11 to rotate and dry at the same time, thereby achieving batch drying of wafers 11.

[0098] Example 2

[0099] This embodiment also provides a wafer processing system, such as Figure 7As shown, it includes a processing tank 12, an expansion and contraction shaft 16, a first support mechanism 13, a second support mechanism 14, and a wafer processing device 17. The expansion and contraction shaft 16 can cooperate with the processing tank 12. The first support mechanism 13 and the second support mechanism 14 are installed in the processing tank 12. The wafer processing device 17 is connected to the expansion and contraction shaft 16, the first support mechanism 13, and the second support mechanism 14 to implement the wafer processing method mentioned in Embodiment 1.

[0100] In this embodiment, the wafer processing system may further include, for example, Figures 4 to 6 The cover plate 15 shown has a second locking position 15a on its bottom surface; the bottom of the treatment tank 12 is provided with a drain port for the discharge of cleaning fluid.

[0101] It should be noted that the method by which the wafer processing system of this embodiment 2 processes wafer 11 can refer to the content of embodiment 1, and will not be repeated here.

[0102] The terms "first," "second," etc., are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Therefore, a feature defined with "first," "second," etc., may explicitly or implicitly include one or more of that feature. In the description of this disclosure, "a plurality of" means two or more, unless otherwise explicitly specified.

[0103] In this disclosure, unless otherwise expressly specified and limited, the terms "assembly," "connection," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this disclosure according to the specific circumstances.

[0104] In the description of this specification, references to terms such as "some embodiments," "exemplarily," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of this disclosure. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples. Moreover, without contradiction, those skilled in the art can combine and integrate the different embodiments or examples described in this specification, as well as the features of different embodiments or examples.

[0105] Although embodiments of the present disclosure have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present disclosure. Those skilled in the art can make changes, modifications, substitutions and variations to the above embodiments within the scope of the present disclosure. Therefore, any changes or modifications made in accordance with the claims and description of the present disclosure should fall within the scope of the patent coverage of the present disclosure.

Claims

1. A wafer processing method, characterized in that, include: The wafer assembly is gripped, the wafer assembly includes a support frame and a wafer, the support frame includes an annular side panel and a base plate located at the bottom of the side panel, the side panel has slots on its two opposite inner surfaces in a second direction to form a first gripping position, the wafer is erected at the first gripping position, and the center area of ​​the base plate has a clearance opening that exposes the bottom of the wafer, the second direction being the radial direction of the wafer; The wafer assembly is moved to a designated position within the processing tank so that the support frame is connected to the first support mechanism, and the bottom of the wafer within the support frame is supported on the second support mechanism through the clearance opening. Drying gas is introduced into the processing tank based on the drying command, and the first support mechanism is driven to descend and / or the second support mechanism is driven to rise, so that the support frame is separated from the wafer. When the separation gap between the support frame and the wafer is greater than a preset gap value, the expansion shaft is driven to move horizontally between the wafer and the support frame. There is a gap between the expansion shaft and the wafer. The expansion shaft is parallel to the axial direction of the wafer. Each expansion shaft is configured to correspond to multiple wafer assemblies. When the gap between the expansion shaft and the wafer is greater than the minimum expansion size of the expansion shaft, the expansion shaft is controlled to expand so that the expansion shaft contacts the wafer; When the expansion shaft comes into contact with the wafer, the expansion shaft is driven to rotate, thereby causing the wafer to rotate.

2. The wafer processing method according to claim 1, characterized in that, After moving the wafer assembly to a designated position within the processing tank, and before filling the processing tank with drying gas based on a drying command, and before driving the first support mechanism to descend and / or driving the second support mechanism to rise, the wafer processing method further includes: Move the cover plate to the top of the processing tank, and align the second locking position on the bottom surface of the cover plate with the first locking position of the support frame.

3. The wafer processing method according to claim 2, characterized in that, Drive the first support mechanism to descend and / or drive the second support mechanism to rise based on a drying command, including: Based on the drying command, the second support mechanism is driven to rise a first distance so that the top of the wafer on the second support mechanism is engaged in the second locking position; Based on the drying command, the first support mechanism is driven to descend a second distance so that the separation gap between the support frame and the wafer is greater than a preset gap value.

4. The wafer processing method according to claim 2, characterized in that, After moving the wafer assembly to a designated position within the processing bay, and before moving the cover plate to the top of the processing bay, the wafer processing method further includes: Cleaning fluid is injected into the treatment tank based on the cleaning command; When the cleaning fluid in the treatment tank reaches the target level, the injection of cleaning fluid into the treatment tank shall be stopped. The target liquid level is higher than the top of the wafer, and there is a gap between the cover plate and the second locking position when the cover plate is moved to the top of the processing tank.

5. The wafer processing method according to claim 4, characterized in that, After the cover plate is moved to the top of the processing tank, and before the processing tank is filled with drying gas based on a drying command, and the first support mechanism is driven to descend and / or the second support mechanism is driven to rise, the wafer processing method further includes: The wafer assembly is cleaned using the cleaning solution in the processing tank; After the cleaning time reaches the target time, the drain port of the treatment tank is opened to allow the cleaning solution in the treatment tank to be discharged through the drain port.

6. The wafer processing method according to claim 5, characterized in that, The drying command is triggered when the drain port of the processing tank is opened and the cleaning fluid level in the processing tank is lower than that of the wafer.

7. The wafer processing method according to claim 1, characterized in that, The method of driving the expansion and contraction shafts to move horizontally between the wafer and the support frame includes: driving two expansion and contraction shafts to move horizontally simultaneously and move them between the wafer and the support frame, and located on both sides of the second support mechanism.

8. The wafer processing method according to claim 1, characterized in that, Controlling the expansion shaft to expand includes: filling the expansion shaft with gas to cause it to expand.

9. A wafer processing system, characterized in that, include: Processing tank; An expansion shaft, which mates with the processing groove; The first support mechanism and the second support mechanism are installed inside the processing tank; A wafer processing apparatus, connected to the expansion shaft, the first support mechanism, and the second support mechanism, is used to implement the wafer processing method as described in any one of claims 1 to 8.

10. The wafer processing system according to claim 9, characterized in that, The wafer processing system also includes a cover plate, the bottom surface of which has a second locking slot; wherein, The bottom of the treatment tank is provided with a drain port for discharging the cleaning fluid.

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