Display device and method of manufacturing the same

Abstract

This application provides a display device and its manufacturing method, relating to the field of display technology. The method enables a cover plate to possess excellent impact resistance, scratch resistance, and bending resistance, effectively improving the reliability of the display device. The display device includes: an array substrate comprising a substrate and an array layer located on one side of the substrate; and a cover plate located on the side of the array layer facing away from the substrate, comprising a first film layer and a second film layer, the first film layer being located on the side of the second film layer facing away from the substrate. The first film layer is formed of a high-modulus material with an elastic modulus of E1, where 50 MPa ≤ E1 ≤ 5 GPa. The second film layer is formed of a modified energy-absorbing and impact-resistant material with viscous and shear-thickening properties.

Description

Technical Field

[0001] This invention relates to the field of display technology, and more specifically to a display device and its manufacturing method. Background Technology

[0002] With the increasing maturity of flexible foldable screen technology, foldable display devices will be a major trend in the future development of mobile terminals. When folded, these display devices look similar in size to traditional mobile phones, making them easier to carry. When unfolded, their screens can be about twice the size of traditional mobile phone screens, bringing users a brand-new visual experience and convenience in reading, gaming, and office work.

[0003] Traditional non-foldable display devices use glass covers, which can effectively resist external impacts and protect the display from cracking. However, the covers in foldable display devices are made of flexible materials. When the display screen is subjected to pressure, impacts, or other stresses, the covers are less effective at protecting the screen, resulting in poor reliability of foldable display devices in situations such as compression, ball drops, and falls. Summary of the Invention

[0004] In view of this, this application provides a display device and a method for manufacturing the same, which enables the cover plate to have good impact resistance, scratch resistance and bending resistance, thereby effectively improving the reliability of the display device.

[0005] In a first aspect, embodiments of this application provide a display device, including:

[0006] An array substrate, the array substrate comprising a substrate and an array layer located on one side of the substrate;

[0007] A cover plate, the cover plate being located on the side of the array layer facing away from the substrate, the cover plate comprising a first film layer and a second film layer, the first film layer being located on the side of the second film layer facing away from the substrate;

[0008] The first film layer is formed of a high-modulus material with an elastic modulus of E1, where 50 MPa ≤ E1 ≤ 5 GPa. The second film layer is formed of a modified energy-absorbing and impact-resistant material with viscous and shear-thickening properties.

[0009] In one embodiment, the modified energy-absorbing and impact-resistant material includes modified silicone, modified thermoplastic polyurethane elastomer rubber, modified polyurethane, or modified shear-thickening material.

[0010] In one embodiment, the molecular structure of the modified energy-absorbing and impact-resistant material includes a bonded polymer molecular backbone and a modified polymer molecular backbone, wherein the modified polymer molecular backbone has hydrogen bonds or coordination bonds, and the coordination bonds include boron-oxygen bonds, metal-catechol bonds, or metal-histidine bonds.

[0011] Furthermore, the elastic modulus of the second membrane layer is E2, where 10 kPa ≤ E2 ≤ 500 MPa.

[0012] Furthermore, in a direction perpendicular to the plane of the substrate, the thickness of the first film layer is less than the thickness of the second film layer.

[0013] In one embodiment, the cover plate further includes a third film layer located on the side of the second film layer facing the substrate. The third film layer is formed of a high-modulus material with an elastic modulus of E3, where 50 MPa ≤ E3 ≤ 5 GPa.

[0014] In one embodiment, the cover plate further includes a fourth film layer located on the side of the second film layer facing the substrate, the fourth film layer being formed of a modified energy-absorbing and impact-resistant material having viscous and shear-thickening properties.

[0015] In one embodiment, the array layer includes an inorganic insulating layer, at least one of the inorganic insulating layers having a hollow portion filled with an organic portion.

[0016] Furthermore, the array layer includes a protective layer, a semiconductor layer, a first gate insulating layer, a first gate layer, a second gate insulating layer, a second gate layer, an interlayer insulating layer, and a source / drain layer stacked along the back of the substrate, and the inorganic insulating layer includes the protective layer, the first gate insulating layer, the second gate insulating layer, and the interlayer insulating layer;

[0017] The protective layer has a first cutout portion, which does not overlap with the semiconductor layer in a direction perpendicular to the plane of the substrate.

[0018] The first gate insulating layer has a second cutout portion, and in a direction perpendicular to the plane of the substrate, the second cutout portion does not overlap with the first gate layer;

[0019] The second gate insulating layer has a third cutout portion, which does not overlap with the second gate layer in a direction perpendicular to the plane of the substrate.

[0020] The interlayer insulating layer has a fourth cutout portion, and the display device includes a display area, wherein the fourth cutout portion covers the display area in a direction perpendicular to the plane of the substrate.

[0021] Furthermore, the display device includes a display area and a non-display area. The non-display area includes a shift register circuit area and a fan-shaped trace area. The cutout portion is located in the display area and the shift register circuit area. In a direction perpendicular to the plane of the substrate, the cutout portion does not overlap with the fan-shaped trace area.

[0022] In one embodiment, the display device further includes a protective film located on the side of the cover plate facing away from the substrate;

[0023] The protective film includes an anti-reflective layer, which includes hollow anti-reflective particles with a particle size of r, 25nm≤r≤30nm, and / or a particle wall thickness of k, 10nm≤k≤12nm.

[0024] In one embodiment, the protective film further includes a hard coating layer located between the anti-reflective layer and the cover plate;

[0025] The hardness of the hard coating is h, 1H≤h≤2H, and / or, in the direction perpendicular to the plane of the substrate, the film thickness of the hard coating is D1, 5μm≤D1≤8μm, and / or, the elastic modulus of the hard coating is E4, 80Gpa≤E4≤100Gpa.

[0026] In one embodiment, the display device further includes an adhesive layer located between the cover plate and the array layer, the adhesive layer having a glass transition temperature of Tg, where Tg ≤ -40°C.

[0027] Furthermore, the adhesive solution forming the adhesive layer is synthesized from materials comprising the following mass percentages: 40%–66% first soft monomer, 2%–8% second soft monomer, 0.05%–0.4% initiator, 0.05%–0.5% crosslinking agent, 2%–10% hard monomer, and 30%–50% macromolecular polymer;

[0028] The glass transition temperature of the first soft monomer and the second soft monomer is less than or equal to -40°C, and the glass transition temperature of the hard monomer is greater than or equal to 0°C.

[0029] Furthermore, the first soft monomer and the second soft monomer respectively include one or more of isooctyl acrylate, n-hexyl acrylate, hydroxybutyl acrylate, and n-butyl acrylate;

[0030] The hard monomer includes at least one of hydroxy acrylate monomers, carboxy acrylate monomers, amino acrylate monomers, and dicyclopentyl acrylate;

[0031] The initiator includes a free radical photoinitiator;

[0032] The crosslinking agent comprises a bifunctional acrylate active polymer, and the molecular weight of the crosslinking agent is greater than or equal to 200 g / mol and less than or equal to 5000 g / mol;

[0033] The macromolecular polymer is prepared by prepolymerization of the first soft monomer, the second soft monomer, and the hard monomer, and the molecular weight of the macromolecular polymer is greater than or equal to 10 × 10⁻⁶. 4 g / mol and less than or equal to 100 × 10 4 g / mol.

[0034] In one embodiment, the film thickness of the adhesive layer is D2 in a direction perpendicular to the plane of the substrate, 15μm≤D2≤100μm, and / or the elastic modulus of the adhesive layer is E5, 5Kpa≤E5≤50Mpa.

[0035] Based on the same inventive concept, embodiments of this application also provide a method for manufacturing a display device, including:

[0036] An array layer is formed on the substrate;

[0037] The process of forming the cover plate includes: forming a second film layer on the side of the array layer facing away from the substrate, the second film layer being formed of a modified energy-absorbing and impact-resistant material having viscous and shear-thickening properties; forming a first film layer on the side of the second film layer facing away from the substrate, the first film layer being formed of a high-modulus material, the elastic modulus of the high-modulus material being E1, 50 MPa ≤ E1 ≤ 5 GPa.

[0038] In one embodiment, before forming the second film layer, the process of forming the cover plate further includes: forming a third film layer on the side of the array layer opposite to the substrate, the third film layer being formed of a high-modulus material having an elastic modulus of E3, where 50 MPa ≤ E3 ≤ 5 GPa.

[0039] In one embodiment, before forming the second film layer, the process of forming the cover plate further includes: a fourth film layer on the side of the array layer opposite to the substrate, the fourth film layer being formed of a modified energy-absorbing and impact-resistant material having viscous and shear-thickening properties.

[0040] In one embodiment, the process of forming the array layer includes: forming an inorganic insulating layer, forming a hollow portion in at least one layer of the inorganic insulating layer, and filling the hollow portion with an organic material to form an organic portion.

[0041] Furthermore, the process of forming the array layer includes:

[0042] A protective layer, a semiconductor layer, a first gate insulating layer, a first gate layer, a second gate insulating layer, a second gate layer, and an interlayer insulating layer are sequentially formed on the substrate. The inorganic insulating layer includes the protective layer, the first gate insulating layer, the second gate insulating layer, and the interlayer insulating layer.

[0043] The interlayer insulating layer and the second gate insulating layer are etched to form a fourth cutout on the interlayer insulating layer and a third cutout on the second gate insulating layer. In a direction perpendicular to the plane of the substrate, the fourth cutout covers the display area of ​​the display device, and the third cutout does not overlap with the second gate layer.

[0044] The first gate insulating layer and the protective layer are etched to form a second cutout on the first gate insulating layer and a first cutout on the protective layer. Furthermore, in a direction perpendicular to the plane of the substrate, the second cutout and the first cutout do not overlap with the semiconductor layer and the first gate layer.

[0045] Organic material is filled into the first hollowed-out portion, the second hollowed-out portion, the third hollowed-out portion, and the fourth hollowed-out portion;

[0046] The source and drain layers are formed.

[0047] In one embodiment, after forming the cover plate, the manufacturing method further includes forming a protective film including an anti-reflective layer;

[0048] The process of forming the antireflective layer includes: forming a core microsphere / microemulsion through self-assembly or surfactant; preparing a silica shell on the surface of the core microsphere using a sol-gel method; and then repeatedly washing away the core microsphere with a solvent to form hollow silica. The particle size of the hollow silica is r, 25nm≤r≤30nm, and / or the particle wall thickness of the hollow silica is k, 10nm≤k≤12nm.

[0049] In one embodiment, before forming the antireflective layer, the process of forming the protective film further includes forming a hard coating layer, wherein the hard coating layer has a hardness of h, 1H≤h≤2H; and / or, in a direction perpendicular to the plane of the substrate, the film thickness of the hard coating layer is d4, 5μm≤d4≤8μm; and / or, the elastic modulus of the hard coating layer is E4, 80Gpa≤E4≤100Gpa.

[0050] In one embodiment, the fabrication method further includes forming an adhesive layer before forming the second film layer;

[0051] The process of forming the adhesive layer includes: preparing an adhesive layer solution and preparing the adhesive layer using the prepared adhesive layer solution, wherein the adhesive layer solution is synthesized from materials comprising the following mass percentages: 40%–66% of a first soft monomer, 2%–8% of a second soft monomer, 0.05%–0.4% of an initiator, 0.05%–0.5% of a crosslinking agent, 2%–10% of a hard monomer, and 30%–50% of a macromolecular polymer; the glass transition temperature of the first soft monomer and the second soft monomer is less than or equal to -40°C, and the glass transition temperature of the hard monomer is greater than or equal to 0°C.

[0052] The display device and its manufacturing method provided in this application have the following beneficial effects:

[0053] In this embodiment of the invention, the cover plate in the display device is a laminated structure formed by at least a first film layer and a second film layer. By designing the first film layer and the second film layer to have different characteristics, the cover plate can have good impact resistance, scratch resistance and bending resistance by utilizing the mutual cooperation of the performance of the first film layer and the second film layer, thereby improving the protection capability of the display device.

[0054] Specifically, the first film layer has a high elastic modulus and a correspondingly high hardness. By placing it on the outside of the display device, when the display device is subjected to external impact or compression, the impact stress or compression stress will act on the first film layer first. At this time, the first film layer with high hardness can not only improve scratch resistance and prevent the screen of the display device from being scratched, but also effectively reduce the deformation under impact stress or compression stress, thereby effectively reducing the strain of the film layers inside the display device, such as the inorganic layer. Furthermore, by adding a second energy-absorbing and shock-resistant film layer with adhesive and shear-thickening properties inside the first film layer, the buffering effect can be further achieved: on the one hand, the second film layer can convert the mechanical energy generated by impact or compression into heat energy, absorbing the impact or compression energy; on the other hand, the second film layer has shear-thickening properties, maintaining material softness and better bending performance at low stress rates, and increasing the elastic modulus of the second film layer at high stress rates, effectively blocking external impact or compression stress and protecting the display device from damage; furthermore, the second film layer has adhesiveness, improving the adhesion between the second film layer and the adjacent two-sided film layers, reducing the risk of the second film layer detaching when the display device is bent or subjected to external force, thereby improving the reliability of the energy-absorbing and shock-resistant properties of the second film layer. Attached Figure Description

[0055] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of the present invention. For those skilled in the art, other drawings can be obtained from these drawings without creative effort.

[0056] Figure 1 This is a schematic diagram of a display device in the prior art;

[0057] Figure 2 This is a schematic diagram of another structure of a display device in the prior art;

[0058] Figure 3 This is a schematic diagram of the structure of the light-emitting device layer in the prior art;

[0059] Figure 4 This is a schematic diagram of the structure of the display device provided in an embodiment of the present invention;

[0060] Figure 5 This is a schematic diagram of the molecular structure of the modified energy-absorbing and impact-resistant material provided in the embodiments of the present invention;

[0061] Figure 6A This is another structural schematic diagram of the display device provided in an embodiment of the present invention;

[0062] Figure 6B This is another structural schematic diagram of the display device provided in an embodiment of the present invention;

[0063] Figure 7 This is a schematic diagram of inorganic insulating layer cracking in the prior art;

[0064] Figure 8 for Figure 7 Enlarged schematic diagram of region A in the middle;

[0065] Figure 9 This is a schematic diagram of the bending direction of a display device in the prior art;

[0066] Figure 10 This is a schematic diagram of the bending of a display device in the prior art;

[0067] Figure 11 This is a schematic diagram of a display device in the prior art when the front side is squeezed.

[0068] Figure 12 This is another structural schematic diagram of the display device provided in an embodiment of the present invention;

[0069] Figure 13 This is another structural schematic diagram of the display device provided in an embodiment of the present invention;

[0070] Figure 14 This is a schematic diagram of the bending condition provided in an embodiment of the present invention;

[0071] Figure 15 This is a schematic diagram of the extrusion condition provided in an embodiment of the present invention;

[0072] Figure 16 This is a top view of the display device provided in an embodiment of the present invention;

[0073] Figure 17 for Figure 16 A sectional view along the A1-A2 direction;

[0074] Figure 18 This is a schematic diagram of the structure of the protective film provided in an embodiment of the present invention;

[0075] Figure 19 This is a schematic diagram of the protective film provided in an embodiment of the present invention being scratched.

[0076] Figure 20 This is a schematic diagram of the deformation of the protective film provided in an embodiment of the present invention;

[0077] Figure 21 This is a schematic diagram comparing the structures of the two anti-reflection layers provided in the embodiments of the present invention;

[0078] Figure 22 Simulation curves of force versus simulation time provided for embodiments of the present invention.

[0079] Figure 23 This is another structural schematic diagram of the display device provided in an embodiment of the present invention;

[0080] Figure 24 A flowchart illustrating the manufacturing method provided in an embodiment of the present invention;

[0081] Figure 25 This is a flowchart illustrating the structure of the array layer fabrication method provided in an embodiment of the present invention.

[0082] Figure 26A A schematic diagram of the molecular structure of the thionium salt provided in the embodiments of the present invention;

[0083] Figure 26B This is a schematic diagram of the molecular structure of the ladder-shaped siloxane provided in the embodiments of the present invention;

[0084] Figure 26C This is a schematic diagram of the molecular structure of the cage-like siloxane provided in an embodiment of the present invention. Detailed Implementation

[0085] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0086] The terminology used in the embodiments of this invention is for the purpose of describing particular embodiments only and is not intended to limit the invention. The singular forms “a,” “the,” and “the” as used in the embodiments of this invention and the appended claims are also intended to include the plural forms unless the context clearly indicates otherwise.

[0087] Before describing the technical solution provided by this invention, this invention first provides a detailed description of the structure of the display device to provide a more in-depth understanding of the display device:

[0088] Figure 1 This is a schematic diagram of a display device in the prior art, such as... Figure 1 As shown, the display device includes a substrate 101, an array substrate 102, a light-emitting device layer 103, an encapsulation layer 104, a polarizer 105, a touch layer 106, and a cover plate 107 stacked together. In addition, the display device also includes a driver chip 108 bonded to the array substrate 102.

[0089] Figure 2 This is a schematic diagram of another structure of a display device in the prior art, such as... Figure 2 As shown, the substrate 101 may specifically include a steel sheet 109, and a transition layer 110 such as a base film and adhesive. The array substrate 102 may specifically include a substrate 111 formed of polyimide (PI) material, and an array layer 112 located on one side of the substrate 111. The array layer 112 may specifically include a semiconductor layer and a metal layer for forming electronic devices (such as transistors and storage capacitors), as well as multiple inorganic insulating layers. Figure 3 This is a schematic diagram of the structure of the light-emitting device layer in the prior art, such as... Figure 3 As shown, the light-emitting device layer 103 may specifically include an anode 113, a hole injection layer 114, a hole transport layer 115, a light-emitting layer 116, an electron transport layer 117, an electron injection layer 118, and a cathode 119 stacked together. When driving the display device to emit light, the electronic devices in the array layer 112 transmit driving current to the anode 113, and electrons and holes are injected into the light-emitting layer 116 respectively for composite light emission. Please refer again. Figure 2The encapsulation layer 104 may specifically include a first inorganic encapsulation layer 120, an organic encapsulation layer 121, and a second inorganic encapsulation layer 122 stacked together. The encapsulation layer 104 is used to prevent external water and oxygen from penetrating and to protect the light-emitting devices and electronic devices inside the display device.

[0090] In existing technologies, the cover plate 107 in foldable display devices is typically a single-layer film structure formed from materials such as polyethylene glycol terephthalate (PET), thermoplastic polyurethanes (TPU), or clear polyimide (CPI). Because the material used to form the cover plate 107 is limited, its properties are also relatively limited. For example, when the cover plate 107 is a PET film, the PET film is relatively hard and has poor impact resistance. When the screen of the display device is subjected to external impact, it is difficult to absorb or dissipate the impact energy. When the cover plate 107 is a TPU film, TPU is a rubber material. Although the TPU film is relatively soft and can absorb some impact energy, its surface has poor scratch and abrasion resistance, and it is also not resistant to compression.

[0091] Therefore, the cover plate 107 in existing display devices cannot simultaneously possess good impact resistance, scratch resistance, and bending resistance, resulting in poor reliability of the display device.

[0092] Therefore, embodiments of the present invention provide a display device. Figure 4 This is a schematic diagram of the structure of the display device provided in an embodiment of the present invention, such as... Figure 4 As shown, the display device includes an array substrate 1, which includes a substrate 2 and an array layer 3 located on one side of the substrate 2. The display device also includes a cover plate 4, which is located on the side of the array layer 3 facing away from the substrate 2. The cover plate 4 includes a first film layer 5 and a second film layer 6, with the first film layer 5 located on the side of the second film layer 6 facing away from the substrate 2.

[0093] The first film layer 5 is formed of a high-modulus material with an elastic modulus of E1, where 50 MPa ≤ E1 ≤ 5 GPa. For example, the first film layer 5 can be formed of organic materials such as TPU, polyurethane (PU), polycarbonate (PC), PET, PI, or polymethyl methacrylate (PMMA). The second film layer 6 is formed of a modified energy-absorbing and impact-resistant material with viscous and shear-thickening properties.

[0094] It should be noted that you should refer to [the website / platform] again. Figure 4The display device also includes a substrate 7, a light-emitting device layer 8, an encapsulation layer 9, a polarizer 10, and a touch layer 11. The specific film structure of this part and its relative positional relationship with the array substrate 1 and the cover plate 4 are the same as those in the prior art, and will not be described in detail here.

[0095] In this embodiment of the invention, the cover plate 4 in the display device is a stacked structure formed by at least a first film layer 5 and a second film layer 6. By designing the first film layer 5 and the second film layer 6 to have different characteristics, the cover plate 4 can have good impact resistance, scratch resistance and bending resistance by utilizing the mutual cooperation of the performance of the first film layer 5 and the second film layer 6, thereby improving the protection capability of the display device.

[0096] Specifically, the first film layer 5 has a high elastic modulus and a correspondingly high hardness. By placing it on the outside of the display device, when the display device is subjected to external impact or compression, the impact stress or compression stress will act on the first film layer 5 firstly. At this time, the first film layer 5 with higher hardness can not only improve scratch resistance and prevent the screen of the display device from being scratched, but also effectively reduce the deformation under impact stress or compression stress, thereby effectively reducing the strain of the film layers inside the display device, such as the inorganic layer. Furthermore, by adding a second energy-absorbing and impact-resistant film layer 6 with adhesive and shear-thickening properties inside the first film layer 5, the buffering effect can be further achieved using the second film layer 6: On the one hand, the second film layer 6 can convert the mechanical energy generated by impact or compression into heat energy, absorbing the impact or compression energy; on the other hand, the second film layer 6 has shear-thickening properties, maintaining material softness and better bending performance at low stress rates, and increasing the elastic modulus of the second film layer 6 at high stress rates, effectively blocking external impact or compression stress and protecting the display device from damage; furthermore, the second film layer 6 has adhesiveness, improving the adhesion between the second film layer 6 and the adjacent two-sided film layers, reducing the risk of the second film layer 6 detaching when the display device is bent or subjected to external force, thereby improving the reliability of the energy-absorbing and impact-resistant properties of the second film layer 6.

[0097] It has been verified that, compared with a PET single-layer film or a TPU single-layer film of the same thickness, the impact resistance of the cover plate 4 with the laminated structure provided in this embodiment of the invention can be improved by at least 100%.

[0098] In one embodiment, the modified energy-absorbing and impact-resistant material used to form the second film layer 6 may specifically include modified silicone, modified thermoplastic polyurethanes (TPU), modified polyurethane (PU), or modified shear-thickening materials. These materials are relatively soft and have greater deformation, thus exhibiting better energy absorption. Further, the modified energy-absorbing and impact-resistant material may specifically be polyborosiloxane-modified silicone.

[0099] In one implementation, Figure 5 This is a schematic diagram of the molecular structure of the modified energy-absorbing and impact-resistant material provided in the embodiments of the present invention, as shown below. Figure 5 As shown, the molecular structure of the modified energy-absorbing and impact-resistant material includes a bonded polymer molecular backbone 71 and a modified polymer molecular backbone 72. The modified polymer molecular backbone 72 has hydrogen bonds or coordinate bonds, including boron-oxygen bonds, metal-catechol bonds, or metal-histidine bonds. Figure 5 Hydrogen bonds or coordinate bonds are indicated by reference numeral 73 in the attached figure.

[0100] Wherein, the polymer molecular backbone is a silicone molecular backbone, the modified polymer molecular backbone is a modified silicone molecular backbone, or the polymer molecular backbone is a TPU molecular backbone, the modified polymer molecular backbone is a modified TPU molecular backbone, or the polymer molecular backbone is a PU molecular backbone, the modified polymer molecular backbone is a modified PU molecular backbone.

[0101] In this embodiment of the invention, by adjusting the molecular structure of the material forming the second film layer 6 at the microscopic level, and introducing coordination bonds such as hydrogen bonds, boron-oxygen bonds, boron-oxygen bonds, metal-catechol bonds, or metal-histidine bonds into the molecular structure, the material can be made to have shear thickening properties. Furthermore, by bonding the polymer molecular backbone and the modified polymer molecular backbone, the modified polymer molecular backbone can also be used to make the material viscous. Thus, the second film layer 6 formed in the end has both viscous and shear thickening properties, thereby optimizing the performance of the second film layer 6.

[0102] In one embodiment, the elastic modulus of the second membrane layer 6 is E2, where 10 kPa ≤ E2 ≤ 500 MPa. For the second membrane layer 6 to achieve good energy absorption, it needs sufficient deformation to absorb energy. Therefore, the elastic modulus of the second membrane layer 6 should not be too high. However, if the elastic modulus of the second membrane layer 6 is too low, the material of the second membrane layer 6 will be too soft, and under impact or compressive stress, the second membrane layer 6 will undergo significant deformation. Since the second membrane layer 6 has a certain degree of viscosity, this will cause the second membrane layer 6 to pull against adjacent side membrane layers, increasing the risk of the second membrane layer 6 detaching. Therefore, this embodiment of the invention sets the elastic modulus of the second membrane layer 6 within the range of 10 kPa to 500 MPa. This avoids both excessively low elastic modulus, ensuring good energy absorption, and excessively high elastic modulus, reducing the risk of the second membrane layer 6 detaching under external forces.

[0103] It should be noted that when the display device is subjected to impact or compression, the stress acting on each film layer mainly manifests as lateral shear force and longitudinal compressive force. When stress acts on the first film layer 5, the shear force will spread laterally to the surrounding area as the first film layer 5 vibrates, while the compressive force will continue to spread longitudinally to the second film layer 6, where the second film layer 6 absorbs the compressive force to a certain extent. To ensure that the first film layer 5 and the second film layer 6 have sufficient thickness to optimize their vibration energy dissipation or energy absorption effects and reduce the impact of stress on other film layers, please refer again to... Figure 4 In the direction perpendicular to the plane of substrate 2, the thickness of the first film layer 5 is d1, 20μm≤d1≤200μm, and the thickness of the second film layer 6 is d2, 20μm≤d2≤200μm.

[0104] Furthermore, in the direction perpendicular to the plane of the substrate 2, the thickness of the first film layer 5 is less than the thickness of the second film layer 6. For example, the thickness of the first film layer 5 is 50 μm, and the thickness of the second film layer 6 is 100 μm. By making the second film layer 6 thicker, the deformation of the second film layer 6 in the thickness direction can be increased, thereby further improving the energy absorption and impact resistance of the second film layer 6.

[0105] In one implementation, Figure 6A This is another structural schematic diagram of the display device provided in an embodiment of the present invention, such as... Figure 6A As shown, the cover plate 4 also includes a third film layer 12, which is located on the side of the second film layer 6 facing the substrate 2. The third film layer 12 is formed of a high-modulus material, and the elastic modulus of the high-modulus material is E3, where 50 MPa ≤ E3 ≤ 5 GPa. For example, the third film layer 12 can be formed of TPU, PU, ​​or organic materials such as PC, PET, PMMA, and PI.

[0106] By adding a high-modulus third film layer 12 to the second film layer 6, the third film layer 12 has a correspondingly higher hardness, which can block the large deformation generated by the second film layer 6 and prevent the deformation from continuing to accumulate inward, causing the film layer in the array layer 3 to also generate large deformation, thus giving the cover plate 4 better impact resistance.

[0107] Furthermore, to optimize the impact resistance of the third membrane layer 12, please refer again. Figure 6A In the direction perpendicular to the plane of substrate 2, the thickness of the third film layer 12 is d3, 20μm≤d3≤200μm.

[0108] It should be noted that the third film layer 12 can be made of the same material and have the same film thickness as the first film layer 5, or it can be made of different materials and have different film thicknesses. For example, the first film layer 5 is formed of PI material with a film thickness of 50 μm, the second film layer 6 is formed of polyborosiloxane modified silicone with a film thickness of 100 μm, and the third film layer 12 is formed of PET material with a film thickness of 50 μm.

[0109] In one implementation, Figure 6B This is another structural schematic diagram of the display device provided in the embodiment of the present invention, such as... Figure 6B As shown, the cover plate 4 also includes a fourth film layer 44, which is located on the side of the second film layer 6 facing the substrate 2. The fourth film layer 44 is formed of a modified energy-absorbing and impact-resistant material with viscous and shear-thickening properties.

[0110] By further adding a fourth membrane layer 44 made of modified energy-absorbing and impact-resistant material inside the second membrane layer 6, not only can the fourth membrane layer 44 further absorb impact energy or extrusion energy to achieve a better buffering effect, but the adhesiveness and shear thickening properties of the fourth membrane layer 44 can also make the cover plate 4 have better extrusion resistance.

[0111] Furthermore, please see again Figure 6B In the direction perpendicular to the plane of substrate 2, the thickness of the fourth film layer 44 is d4, 20μm≤d4≤200μm.

[0112] Furthermore, it should be noted that the film structure of a display device includes multiple inorganic layers. For example, the array substrate includes multiple inorganic insulating layers, and the encapsulation layer includes multiple inorganic encapsulation layers. Compared to organic materials, inorganic materials have poorer bending resistance, which makes it difficult to release the stress on the internal film layers of the display device. Taking the inorganic insulating layer in the array substrate as an example, combined with... Figure 1 and Figure 2 , Figure 7 This is a schematic diagram of inorganic insulating layer cracking in the prior art. Figure 8 for Figure 7 An enlarged schematic diagram of region A in the middle, as shown below. Figure 7 and Figure 8 As shown, the array substrate 102 includes multiple inorganic insulating layers 123 and multiple metal layers 124. When the display device is bent or subjected to external force, if the stress accumulation exceeds the cracking threshold of the inorganic insulating layer 123, the inorganic insulating layer 123 will crack, making it difficult to ensure the impact resistance and bending reliability of the display device. Moreover, the cracking of the inorganic insulating layer 123 will further cause the breakage of the metal layer 124 adjacent to the inorganic insulating layer 123, resulting in poor display phenomena such as broken bright spots and bright lines in the display device.

[0113] In particular, for outward-folding display devices, combined with Figure 1 and Figure 2 , Figure 9 This is a schematic diagram of the bending direction of a display device in the prior art. Figure 10 A schematic diagram of the bending of a display device in the prior art, such as... Figure 9 and Figure 10 As shown, as the outer fold radius R becomes smaller, the bending or compressive stress on the array substrate 102 will become larger and larger, and the risk of cracking in the inorganic insulating layer 123 in the array substrate 102 will also be greater. In particular, when the bending radius R is reduced to 3 mm or even 1 mm, the inorganic insulating layer 123 has a greater risk of fracture, which restricts the further development of the bending radius R.

[0114] also, Figure 11 This is a schematic diagram of a display device when its front surface is squeezed, in the prior art. Figure 11 The bamboo book structure 125 shown is used to improve bending performance, such as Figure 11 As shown, since the cover plate 107 on the surface of the existing display device is a single-layer flexible thin film structure, when the front of the display device is squeezed, the cover plate 107 deforms greatly, and the corresponding array substrate 102 deforms greatly. This makes the inorganic insulating layer 123 in the array substrate 102 more prone to cracking.

[0115] It is evident that the inorganic insulating layer 123 in existing display devices has a significant impact on the reliability of the display device.

[0116] Therefore, in the embodiments of the present invention, Figure 12 This is another structural schematic diagram of the display device provided in the embodiment of the present invention, such as... Figure 12 As shown, the array layer 3 includes an inorganic insulating layer 13, at least one of which has a hollow portion 14 filled with an organic portion 15. Compared to an inorganic insulating layer 13 that covers the entire surface, this embodiment of the invention, by providing a hollow portion 14 in the inorganic insulating layer 13 and filling the hollow portion 14 with organic material, can utilize the organic material to disperse the stress concentrated in the inorganic insulating layer 13, preventing stress accumulation to the cracking threshold of the inorganic insulating layer 13. This effectively reduces the risk of fracture of the inorganic insulating layer 13 and the metal layer in the array substrate 1, improving the extrusion resistance and bending resistance of the display device, and avoiding poor display phenomena such as broken bright spots and bright lines caused by broken lines in the metal layer.

[0117] Furthermore, please see again Figure 12The display device includes a display area 16. The array layer 3 includes a protective layer 17, a semiconductor layer 18, a first gate insulating layer 19, a first gate layer 20, a second gate insulating layer 21, a second gate layer 22, an interlayer insulating layer 23, and a source / drain layer 24, stacked along the back of the substrate 2. The inorganic insulating layer 13 includes the protective layer 17, the first gate insulating layer 19, the second gate insulating layer 21, and the interlayer insulating layer 23. It should be noted that the electronic devices in the array layer 3 include a transistor 25 and a storage capacitor 26. The transistor 25 includes an active layer 27 located in the semiconductor layer 18, a gate 28 located in the first gate layer 20, a source 29 located in the source / drain layer 24, and a drain 30. The storage capacitor 26 includes a first electrode 31 located in the first gate layer 20 and a second electrode 32 located in the second gate layer 22.

[0118] The protective layer 17 has a first cutout portion 33, which does not overlap with the semiconductor layer 18 in a direction perpendicular to the plane of the substrate 2. The first gate insulating layer 19 has a second cutout portion 34, which does not overlap with the first gate layer 20 in a direction perpendicular to the plane of the substrate 2. The second gate insulating layer 21 has a third cutout portion 35, which does not overlap with the second gate layer 22 in a direction perpendicular to the plane of the substrate 2. The interlayer insulating layer 23 has a fourth cutout portion 36, which covers the display area 16 in a direction perpendicular to the plane of the substrate 2.

[0119] Based on the above configuration, each of the multiple inorganic insulating layers 13, including the protective layer 17, the first gate insulating layer 19, the second gate insulating layer 21, and the interlayer insulating layer 23, has a cutout portion 14. This maximizes the utilization of the organic portion 15 filled in the cutout portion 14, thereby improving the display device's resistance to compression and bending. Furthermore, the cutout portions 14 in the protective layer 17, the first gate insulating layer 19, and the second gate insulating layer 21 do not overlap with the metal layer or semiconductor layer 18 on the side of the film layer facing away from the substrate 2. That is, the lower side of the metal layer or semiconductor layer 18 remains adjacent to the inorganic material, thus enabling the inorganic material to provide better insulation. For example, an inorganic material is still spaced between the two plates of the storage capacitor 26, and the capacitor dielectric layer of the storage capacitor 26 is still an inorganic layer. Because the inorganic material has a high dielectric constant, the electronic characteristics of the storage capacitor 26 are superior.

[0120] It should be noted that you should refer to [the website / platform] again. Figure 12A planarization layer 56 for forming a flat surface is provided between the array layer 3 and the light-emitting device layer 8. The light-emitting device layer 8 includes an anode 37, a light-emitting layer 38, and a cathode 39 stacked along the back of the substrate 2. The encapsulation layer 9 includes a first inorganic encapsulation layer 40, an organic encapsulation layer 41, and a second inorganic encapsulation layer 42 stacked along the back of the substrate 2. The display device also includes a pixel definition layer 43 located on the side of the anode 37 facing away from the substrate 2. The pixel definition layer 43 has an opening, and the light-emitting layer 38 is located within the opening. In addition, the light-emitting device layer 8 also includes a support pillar 45 located on the side of the pixel definition layer 43 facing away from the substrate 2. The support pillar 45 serves to support the fine metal mask (FMM) during the subsequent evaporation of the light-emitting layer 38.

[0121] In addition, it should be noted that you should refer to [the website / platform] again. Figure 12 The protective layer 17 may specifically include an isolation layer 46 and a buffer layer 47 located on the side of the isolation layer 46 facing away from the substrate 2. The isolation layer 46 and the buffer layer 47 can isolate Na+ and K+ in the glass. Furthermore, the buffer layer 47 can also play a role in heat preservation during the excimer laser annealing (ELA) process. Figure 13 This is another structural schematic diagram of the display device provided in the embodiment of the present invention, such as... Figure 13 As shown, a PI layer 48 may be spaced between the isolation layer 46 and the buffer layer 47. When etching the isolation layer 46 and the buffer layer 47 to form the cutout portion 14, the same patterning process can be used to pattern the buffer layer 47, the PI layer 48 and the isolation layer 46 at the same time. Then, organic material can be filled into the cutout portion 14 of the buffer layer 47, the PI layer 48 and the isolation layer 46 to form the organic portion 15.

[0122] Furthermore, the inventors also verified the bending performance and extrusion resistance of the above structure. Compared to Figure 7 The existing structure shown adopts the structure provided by the embodiments of the present invention. Figure 14 This is a schematic diagram of the bending condition provided in an embodiment of the present invention, as shown below. Figure 14 As shown, when the display device is bent to a specific bending state defined by the dotted line in the figure, the maximum principal strain of the inorganic insulating layer, such as the buffer layer 47, in the existing structure is 4858 μe, while in the structure of the present invention, the maximum principal strain of the buffer layer 47 is reduced to 4560 μe, a reduction of 6.1%. Figure 15 This is a schematic diagram of the extrusion condition provided in an embodiment of the present invention, as shown below. Figure 15 As shown, when the display device is squeezed by the extrusion head, the maximum principal strain of the buffer layer 47 in the existing structure is 5754 μe, while in the structure of the present invention, the maximum principal strain of the buffer layer 47 is reduced to 5242 μe, a reduction of 8.7%.

[0123] In one implementation, Figure 16 This is a top view of the display device provided in an embodiment of the present invention. Figure 17 for Figure 16 A sectional view along the A1-A2 direction, as shown below. Figure 16 and Figure 17 As shown, the display device includes a display area 16 and a non-display area 49. The non-display area 49 includes a shift register circuit area 50 and a fan-shaped trace area 51. The display area 16 is provided with a pixel circuit, and the shift register circuit area 50 is provided with a shift register for outputting scanning signals or light emission control signals to the pixel circuit. The cutout portion 14 is located in the display area 16 and the shift register circuit area 50. In the direction perpendicular to the plane of the substrate 2, the cutout portion 14 does not overlap with the fan-shaped trace area 51.

[0124] Typically, the traces in the sector trace area 51 need to transmit large current signals. By retaining inorganic materials in the sector trace area 51 and only patterning the inorganic insulating layer 13 in the display area 16 and the shift register circuit area 50, the metal traces in the sector trace area 51 can remain adjacent to the inorganic materials. This allows the superior dielectric constant of the inorganic materials to be used to prevent large current breakdown.

[0125] In one implementation, Figure 18 This is a schematic diagram of the structure of the protective film provided in an embodiment of the present invention, as shown below. Figure 18 As shown, the display device also includes a protective film 80, which is located on the side of the cover plate 4 facing away from the substrate 2. The protective film 80 includes an anti-reflective layer 81, a hard coating layer 52 located on the side of the anti-reflective layer 81 facing the substrate 2, a PET layer 53 located on the side of the hard coating layer 52 facing the substrate 2, and an optical adhesive 54.

[0126] Figure 19 This is a schematic diagram of the protective film provided in an embodiment of the present invention being scratched. Figure 20 This is a schematic diagram of the deformation of the protective film provided in an embodiment of the present invention, as shown below. Figure 19 and Figure 20 As shown, when the protective film 80 is scratched, the scratching generates shear force in the z-direction and compressive force in the y-direction. The accumulated shear force will scratch the surface of the protective film 80, while the compressive force will cause the protective film 80 to deform downwards. When the protective film 80 deforms, the increase in deflection of the protective film 80 is... Where E is the elastic modulus of the protective film 80, F is the force generated by scratching, L is the length of the protective film 80, h is the thickness of the protective film 80 in the direction perpendicular to the substrate 2, and B is the width of the protective film 80. It can be seen that the deflection increment of the protective film 80 is inversely proportional to its elastic modulus; that is, the harder the protective film 80, the smaller its deflection increment and the smaller the degree of downward deformation.

[0127] In one implementation, please refer again. Figure 18 The antireflective layer 81 includes hollow antireflective particles 60, the particle size of which is r, 25nm≤r≤30nm, and / or the particle wall thickness of which is k, 10nm≤k≤12nm. Here, particle size refers to the distance from the center of the particle to its outer wall.

[0128] When the surface of the protective film 80 is scratched, the shear force is first applied to the antireflective layer 81. In the prior art, the particle size of the antireflective particles 60 in the antireflective layer 81 is between 35 and 40 nm, and the particle wall thickness is between 5 and 7 nm. In this embodiment of the invention, by reducing the particle size of the antireflective particles 60 and / or increasing the particle wall thickness, the ability of the antireflective layer 81 to resist shear force can be improved, the shear force can be dispersed more quickly, and external forces can be used to scratch the surface of the protective film 80.

[0129] Specifically, Figure 21 This is a schematic diagram comparing the structures of the two anti-reflective layers provided in the embodiments of the present invention, as shown below. Figure 21 As shown, the particle size r1 of antireflective particles 60 in antireflective layer A is 30 nm, and the particle wall thickness k1 is 10 nm. In antireflective layer B, the particle size r2 of antireflective particles 60 is 40 nm, and the particle wall thickness k2 is 6 nm. When antireflective layers A and B are scratched to the same degree, Figure 22 This is a simulation curve of force versus simulation time provided in an embodiment of the present invention. Figure 22 The two dashed lines in the diagram correspond to the linear fitting lines of antireflective layer A and antireflective layer B, respectively, as shown in the diagram. Figure 22 As shown, the maximum force in the z-direction of the anti-reflective layer A is approximately 5 × E. 15 ~6×E 15 The maximum force in the z-direction of the anti-reflective layer B is approximately 1 × E. 15 ~3×E 15 It can be seen that the wear resistance of anti-reflective layer A is 2 to 3 times that of anti-reflective layer B.

[0130] In one embodiment, the hard coating 52 has a hardness of h, where 1H ≤ h ≤ 2H; and / or, in the direction perpendicular to the plane of the substrate 2, the film thickness of the hard coating 52 is D1, where 5μm ≤ D1 ≤ 8μm; and / or, the elastic modulus of the hard coating 52 is E4, where 80Gpa ≤ E4 ≤ 100Gpa. For example, in the protective film 80, the antireflective layer 81 has a film thickness of 200nm, the hard coating 52 has a film thickness of 5μm, the PET layer 53 has a film thickness of 50μm, and the optical adhesive layer 54 has a film thickness of 25μm.

[0131] The hardness of the protective film 80 is mainly affected by the hardness of the hard coating 52. By setting the hardness, film thickness, and elastic modulus of the hard coating 52 within the above range, the overall hardness of the protective film 80 can be increased, the deflection increment ΔW of the protective film 80 can be reduced, and the longitudinal (y direction) deformation resistance of the protective film 80 can be improved, thereby further improving the scratch resistance of the protective film 80 and enhancing the protective effect of the protective film 80 on the display device.

[0132] In one implementation, Figure 23 This is another structural schematic diagram of the display device provided in the embodiment of the present invention, such as... Figure 23 As shown, the display device also includes an adhesive layer 55, which is located between the cover plate 4 and the array layer 3. The glass transition temperature of the adhesive layer 55 is Tg, where Tg ≤ -40℃, specifically -50℃ ≤ Tg ≤ -40℃. At this temperature, the glass transition temperature of the adhesive layer 55 is relatively low, thus giving it high viscoelastic properties over a wide temperature range, improving the bending performance of the display device at low temperatures, and extending its service life.

[0133] Furthermore, referring to Table 1, the adhesive solution forming layer 55 is synthesized from materials comprising the following mass percentages: 40%–66% first soft monomer, 2%–8% second soft monomer, 0.05%–0.4% initiator, 0.05%–0.5% crosslinking agent, 2%–10% hard monomer, and 30%–50% macromolecular polymer. The glass transition temperature of the first and second soft monomers is less than or equal to -40°C, and the glass transition temperature of the hard monomer is greater than or equal to 0°C. This utilizes the first and second soft monomers to lower the overall glass transition temperature of adhesive layer 55 and improve the bonding strength at the adhesive interface, while the hard monomer and macromolecular polymer enhance the stability of the molecular structure of adhesive layer 55 at high temperatures and reduce high-temperature creep. It has been verified that adhesive layer 55 formed by this adhesive solution can withstand 100,000 bends at -20°C.

[0134] Table 1

[0135]

[0136] Further, the first and second soft monomers each comprise one or more of isooctyl acrylate, n-hexyl acrylate, hydroxybutyl acrylate, and n-butyl acrylate. The hard monomers comprise at least one of hydroxyacrylate monomers, carboxyacrylate monomers, aminoacrylate monomers, and dicyclopentyl acrylate. The initiator comprises a free radical photoinitiator. Specifically, it may include pyrolytic photoinitiators and hydrogen-abstracting photoinitiators, including but not limited to 1-hydroxycyclohexylphenyl ketone, 2,4,6-trimethylbenzophenone, 4-methylbenzophenone, benzophenone, and dihydroxydimethylphenylacetone. The crosslinking agent comprises a bifunctional acrylate reactive polymer, and the molecular weight of the crosslinking agent is greater than or equal to 200 g / mol and less than or equal to 5000 g / mol. The macromolecular polymer is prepared by prepolymerization of the first soft monomer, the second soft monomer, and the hard monomer, and the molecular weight of the macromolecular polymer is greater than or equal to 10 × 10⁻⁶. 4 g / mol and less than or equal to 100 × 10 4 g / mol, for example, macromolecular polymers include macromolecular acrylate prepolymers.

[0137] In one embodiment, to ensure that the adhesive layer 55 has high viscoelasticity and improve the bending performance of the display device, please refer again to... Figure 23 In the direction perpendicular to the plane of substrate 2, the film thickness of adhesive layer 55 is D2, 15μm≤d5≤100μm; and / or, the elastic modulus of adhesive layer 55 is E5, 5Kpa≤E5≤50Mpa.

[0138] Based on the same inventive concept, embodiments of the present invention also provide a method for manufacturing a display device, combined with Figure 4 and Figure 5 , Figure 24 A flowchart of the manufacturing method provided in the embodiments of the present invention, such as... Figure 24 As shown, the manufacturing method includes:

[0139] Step S1: Form an array layer 3 on the substrate 2. The substrate 2 and the array layer 3 constitute the array substrate 1.

[0140] Step S2: Forming cover plate 4. The process of forming cover plate 4 includes: forming a second film layer 6 on the side of array layer 3 facing away from substrate 2. The second film layer 6 is formed of a modified energy-absorbing and impact-resistant material with adhesive and shear-thickening properties; forming a first film layer 5 on the side of second film layer 6 facing away from substrate 2. The first film layer 5 is formed of a high-modulus material. The elastic modulus of the high-modulus material is E1, 50 MPa ≤ E1 ≤ 5 GPa.

[0141] The cover plate 4 formed by the above manufacturing method is a laminated structure formed by at least a first film layer 5 and a second film layer 6. Specifically, the first film layer 5 has a high elastic modulus and a correspondingly high hardness. By placing it on the outside of the display device, when the display device is subjected to external impact or compression, the impact stress or compression stress will act on the first film layer 5 firstly. At this time, the first film layer 5 with higher hardness can not only improve the scratch resistance and prevent the screen of the display device from being scratched, but also effectively reduce the deformation under impact stress or compression stress, thereby effectively reducing the strain of the film layers inside the display device, such as the inorganic layer. Furthermore, by adding a second energy-absorbing and impact-resistant film layer 6 with adhesive and shear-thickening properties inside the first film layer 5, the buffering effect can be further achieved using the second film layer 6: On the one hand, the second film layer 6 can convert the mechanical energy generated by impact or compression into heat energy, absorbing the impact or compression energy; on the other hand, the second film layer 6 has shear-thickening properties, maintaining material softness and better bending performance at low stress rates, and increasing the elastic modulus of the second film layer 6 at high stress rates, effectively blocking external impact or compression stress and protecting the display device from damage; furthermore, the second film layer 6 has adhesiveness, improving the adhesion between the second film layer 6 and the adjacent two-sided film layers, reducing the risk of the second film layer 6 detaching when the display device is bent or subjected to external force, thereby improving the reliability of the energy-absorbing and impact-resistant properties of the second film layer 6.

[0142] Therefore, by designing the first film layer 5 and the second film layer 6 to have different characteristics, the protective performance of the cover plate 4 for the display device can be improved by utilizing the mutual cooperation between the performance of the first film layer 5 and the second film layer 6, so that the display device has better impact resistance, scratch resistance and bending resistance.

[0143] It should be noted that the forming materials and film thicknesses of the first film layer 5 and the second film layer 6 have been described in the above embodiments and will not be repeated here.

[0144] In one implementation, combined with Figure 6A Before forming the second film layer 6, the process of forming the cover plate 4 also includes: a third film layer 12 on the side of the array layer 3 facing away from the substrate 2. The third film layer 12 is formed of a high-modulus material with an elastic modulus of E3, where 50 MPa ≤ E3 ≤ 5 GPa. By further adding a high-modulus third film layer 12 to the second film layer 6, the third film layer 12 has a correspondingly higher hardness, which can block the large deformation generated by the second film layer 6, preventing the deformation from continuing to accumulate inward and causing the film layers in the array layer 3 to also undergo large deformation, thus giving the cover plate 4 better impact resistance.

[0145] When the cover plate 4 includes a first film layer 5, a second film layer 6, and a third film layer 12, taking the first film layer 5 as a CPI film, the second film layer 6 as a polyborosiloxane modified silicone film, and the third film layer 12 as a PET film as an example, the process of forming the cover plate 4 may specifically include: forming a PET film (third film layer 12), then dissolving the polyborosiloxane modified silicone film in a solvent and coating it onto the third film layer 12, drying the solvent with hot air, attaching the CPI film (first film layer 5), and finally curing.

[0146] In one implementation, combined with Figure 6B Before forming the second film layer 6, the process of forming the cover plate 4 also includes: a fourth film layer 44 on the side of the array layer 3 facing away from the substrate 2. The fourth film layer 44 is formed of a modified energy-absorbing and impact-resistant material with viscous and shear-thickening properties. By further adding a fourth film layer 44 formed of modified energy-absorbing and impact-resistant material inside the second film layer 6, not only can the fourth film layer 44 further absorb impact energy or extrusion energy to achieve a better buffering effect, but the viscous and shear-thickening properties of the fourth film layer 44 itself can also give the cover plate 4 better extrusion resistance.

[0147] In one implementation, combined with Figure 12 The process of forming the array layer 3 includes: forming an inorganic insulating layer 13, forming a hollow portion 14 in at least one inorganic insulating layer 13, and filling the hollow portion 14 with organic material to form an organic portion 15. Compared with the inorganic insulating layer 13 that covers the entire layer in the prior art, the present invention provides a hollow portion 14 in the inorganic insulating layer 13 and fills the hollow portion 14 with organic material. This allows the organic material to disperse the stress concentrated in the inorganic insulating layer 13, preventing stress accumulation to the cracking threshold of the inorganic insulating layer 13. This effectively reduces the risk of fracture of the inorganic insulating layer 13 and the metal layer in the array substrate 1, improving the extrusion resistance and bending resistance of the display device, and avoiding poor display phenomena such as broken bright spots and bright lines caused by broken lines in the metal layer.

[0148] Furthermore, Figure 25 This is a structural flowchart of the array layer fabrication method provided in an embodiment of the present invention, as shown below. Figure 25 As shown, the process of forming array layer 3 includes:

[0149] Step K1: A protective layer 17, a semiconductor layer 18, a first gate insulating layer 19, a first gate layer 20, a second gate insulating layer 21, a second gate layer 22 and an interlayer insulating layer 23 are sequentially formed on the substrate 2. The inorganic insulating layer 13 includes the protective layer 17, the first gate insulating layer 19, the second gate insulating layer 21 and the interlayer insulating layer 23.

[0150] Specifically, step K1 includes:

[0151] Step K11: Coat a PI material with a thickness of 9μm to 11μm on the cleaned glass substrate and cure it to form substrate 2.

[0152] Step K12: Deposit a 650 nm thick isolation layer 46 and a 5 nm thick amorphous silicon layer on substrate 2 using plasma enhanced chemical vapor deposition (PECVD) technology. The isolation layer 46 is used to absorb laser lift-off (LLO) energy during the subsequent ELA process on the amorphous silicon layer.

[0153] Step K13: Deposit buffer layer 47 using PECVD technology. Buffer layer 47 is a 200nm thick SiN layer. x A composite film of SiO2 with a thickness of 350 nm is used, with buffer layer 47 serving to provide insulation during the subsequent ELA process on the amorphous silicon layer. It should be noted that before depositing buffer layer 47, a combination of... Figure 13 Alternatively, a PI layer with a thickness of 9–11 μm can be formed first.

[0154] Step K14: Deposit an amorphous silicon layer using PECVD technology, and perform hydrogen removal treatment on the amorphous silicon layer (450℃, 2h). Then, perform ELA process to realize the conversion of the amorphous silicon layer to a polycrystalline silicon layer. Perform exposure, development and etching processes on the polycrystalline silicon layer to form a semiconductor layer 18 with a certain pattern.

[0155] Step K15: Deposit a first gate insulating layer 19 with a thickness of 120nm using PECVD. The first gate insulating layer 19 can be a SiO2 layer.

[0156] Step K16: Deposit a 220nm thick Mo metal layer using magnetron sputtering technology, and perform exposure, development and etching processes on the Mo metal layer to form a first gate layer 20 with a certain pattern. The first gate layer 20 is used as the gate 28 of the transistor 25 and the first plate 31 of the storage capacitor 26.

[0157] Step K17: Deposit a second gate insulating layer 21 with a thickness of 130nm using PECVD technology. The second gate insulating layer 21 can be SiN. x The second gate insulating layer 21 is used as the capacitor dielectric layer of the storage capacitor 26.

[0158] Step K18: Deposit a 220nm thick Mo metal layer using Sputter technology, and perform exposure, development, etching and other processes on the Mo metal layer to form a second gate layer 22 with a certain pattern. The second gate layer 22 is used as the second electrode 32 of the storage capacitor 26.

[0159] Step K19: Deposit an interlayer insulating layer 23 using PECVD technology. The interlayer insulating layer 23 is composed of 300nm thick SiN. x The composite film formed by the layer and the underlying 300nm thick SiO2 layer was then subjected to hydrogenation treatment (350 degrees Celsius, 2h) to repair the dangling bonds on the polycrystalline silicon surface.

[0160] Step K2: Etch the interlayer insulating layer 23 and the second gate insulating layer 21 to form a fourth cutout 36 on the interlayer insulating layer 23 and a third cutout 35 on the second gate insulating layer 21. In a direction perpendicular to the plane of the substrate 2, the fourth cutout 36 covers the display area 16 of the display device, and the third cutout 35 does not overlap with the second gate layer 22.

[0161] Step K3: Etch the first gate insulating layer 19 and the protective layer 17 to form a second cutout 34 on the first gate insulating layer 19 and a first cutout 33 on the protective layer 17. In the direction perpendicular to the plane of the substrate 2, the second cutout 34 and the first cutout 33 do not overlap with the semiconductor layer 18 and the first gate layer 20.

[0162] Step K4: Fill the first cutout portion 33, the second cutout portion 34, the third cutout portion 35 and the fourth cutout portion 36 with organic material. The organic portion 15 can be an organic material of polyimide system or the same organic material as the planarization layer, pixel definition layer and support pillar. After filling with organic material to form the organic portion 15, it is necessary to further form vias on the organic portion 15.

[0163] It should be noted that, in order to improve the screen-to-body ratio of the display device and further reduce the bezel width, the edge portion of the array substrate 1 located in the non-display area can be bent backward (pad bending) to bond the driver chip. To prevent the inorganic insulating layer 13 in the bending area from cracking during the bending process, the inorganic insulating layer 13 in the bending area can be etched and filled with organic material. When etching the inorganic insulating layer 13 in the bending area, a two-stage etching process is usually used. Based on this, in this embodiment of the invention, the pattern of the mask in the first etching process can be adjusted to simultaneously etch the interlayer insulating layer 23 and the second gate insulating layer 21 in the first etching process, and the pattern of the mask in the second etching process can be adjusted to simultaneously etch the first gate insulating layer 19 and the protective layer 17 in the second etching process, thereby simplifying the process flow and reducing the number of masks required. In addition, organic materials can be filled into the first hollowed-out section 33, the second hollowed-out section 34, the third hollowed-out section 35, the fourth hollowed-out section 36, and the hollowed-out section in the bending area at the same time to simplify the process.

[0164] Step K5: Form source / drain layer 24. Source / drain layer 24 is connected to semiconductor layer 18 through vias in organic part 15.

[0165] Specifically, the source-drain layer 24 is a Ti-Al-Ti composite film layer with thicknesses of 50nm, 650nm and 50nm, respectively. After the composite film layer is deposited, exposure, development and etching processes are performed to form a source-drain layer 24 with a certain pattern. The source-drain layer 24 serves as the source 29 and drain 30 of the transistor 25, and is used to transmit data signals to the light-emitting device layer 8 to control the light-emitting brightness of the light-emitting device.

[0166] Based on the above configuration, each of the multiple inorganic insulating layers 13, including the protective layer 17, the first gate insulating layer 19, the second gate insulating layer 21, and the interlayer insulating layer 23, has a cutout portion 14. This maximizes the utilization of the organic portion 15 filled in the cutout portion 14, thereby improving the display device's resistance to compression and bending. Furthermore, the cutout portions 14 in the protective layer 17, the first gate insulating layer 19, and the second gate insulating layer 21 do not overlap with the metal layer or semiconductor layer 18 on the side of the film layer facing away from the substrate 2. In other words, the lower side of the metal layer or semiconductor layer 18 remains adjacent to the inorganic material, thus enabling the inorganic material to provide better insulation.

[0167] In addition, the display device also includes film layers such as a planarization layer 56, a light-emitting device layer 8, an encapsulation layer 9, a polarizer 10, and a touch layer 11. Among these, [the following is a description of the process:] combining... Figure 12 The process of forming the planarization layer 56, the light-emitting device layer 8, and the encapsulation layer 9 may specifically include:

[0168] Step Q1: Form a planarization layer 56 with a thickness of 1.5 μm, and perform processes such as exposure, development and etching on the planarization layer 56 to form vias on the planarization layer 56.

[0169] Step Q2: Deposit ITO-Ag-ITO composite films with thicknesses of 10 nm, 100 nm and 7 nm, respectively, and perform exposure, development and etching processes on the composite films to complete the preparation of anode 37.

[0170] Step Q3: Form a 1.5μm thick pixel definition layer 43 (PDL), and perform exposure, development, etching and other processes on the pixel definition layer 43 to form an opening.

[0171] Step Q4: Form a 2μm thick support pillar 45, which is used to support the FMM during the subsequent deposition of the light-emitting layer 38.

[0172] Step Q5: Form a 300nm thick light-emitting layer 38 and a 12nm thick cathode 39, and deposit a coupling layer (CPL) and a LiF layer by vapor deposition. The CPL layer is an organic layer used to adjust the refractive index and increase the light extraction efficiency, and the LiF layer is an inorganic layer used for electromagnetic shielding.

[0173] Step Q6: Form a first inorganic encapsulation layer 40 with a thickness of 1 μm. The first inorganic encapsulation layer 40 can be a SiON layer. Then, an organic material is coated to form an organic encapsulation layer 41 with a thickness of 10 μm. Finally, a second inorganic encapsulation layer 42 with a thickness of 1 μm is formed. The second inorganic encapsulation layer 42 can be a SiOx layer. The first inorganic encapsulation layer 40, the organic encapsulation layer 41, and the second inorganic encapsulation layer 42 constitute the encapsulation layer 9.

[0174] In one implementation, combined with Figure 18 After forming the cover plate 4, the fabrication method further includes forming a protective film 80 including an anti-reflective layer 81. The process of forming the anti-reflective layer 81 includes: forming a core microsphere / microemulsion by self-assembly or surfactant; preparing a silica shell on the surface of the core microsphere using a sol-gel method; and then repeatedly washing away the core microsphere with a solvent to form hollow silica. The hollow silica is anti-reflective particles 60, the particle size of the hollow silica is r, 25nm≤r≤30nm, and / or the particle wall thickness of the hollow silica is k, 10nm≤k≤12nm. By reducing the particle size of the anti-reflective particles 60 and increasing the particle wall thickness, the ability of the anti-reflective layer 81 to resist shear force is improved, the shear force is dispersed more quickly, and external forces are prevented from scratching the surface of the protective film 80.

[0175] Furthermore, the process of forming core microspheres / microemulsions through self-assembly or surfactants, preparing a silica shell on the surface of the core microspheres using the sol-gel method, and then repeatedly washing away the core microspheres with a solvent to form hollow silica may specifically include:

[0176] Step H1: Disperse 0.3g to 0.5g of polyacrylic acid into 15ml to 20ml of ammonia water and stir until the polyacrylic acid is completely and uniformly dispersed in the ammonia water.

[0177] Step H2: Pour the polyacrylic acid ammonia solution into an anhydrous ethanol beaker. After the polyacrylic acid ammonia solution is evenly dispersed, slowly add 2-3 ml of tetraethyl orthosilicate while magnetically stirring the beaker.

[0178] Step H3: After adding tetraethyl orthosilicate, the mixed solution is stirred at room temperature for 10 hours to finally form a transparent solution of hollow spherical silica sol.

[0179] Step H4: Hybridize the hollow spherical silica sol. First, reflux the silica nanoparticle sol at about 80°C to remove ammonia from the solution. After cooling to room temperature, add dilute hydrochloric acid to adjust the pH value. Finally, adjust the pH value to about 2-3. Then, add 1-2 ml of tetraethyl orthosilicate to the solution and stir for 1-2 hours.

[0180] Step H5: Preparation of antireflective coating: Solution coating is performed on a PET substrate (or a PET substrate with HC coating). The final film thickness is controlled between 150nm and 200nm by adjusting the spin coating speed and the number of coatings at room temperature.

[0181] Step H6: After the coating is completed, soak the product in about 30% hydrogen peroxide and heat it to 80-100°C to remove tetraethyl orthosilicate from the solution, forming a dense hollow silicon oxide coating, which is the anti-reflective layer 81.

[0182] In one implementation, combined with Figure 18 Before forming the antireflective layer 81, the process of forming the protective film 80 also includes forming a hard coating 52, the hard coating 52 having a hardness of h, 1H≤h≤2H; and / or, in the direction perpendicular to the plane of the substrate 2, the film thickness of the hard coating 52 having d4, 5μm≤d4≤8μm; and / or, the elastic modulus of the hard coating 52 having E4, 80Gpa≤E4≤100Gpa.

[0183] The hardness of the protective film 80 is mainly affected by the hardness of the hard coating 52. By setting the hardness, film thickness, and elastic modulus of the hard coating 52 within the above range, the overall hardness of the protective film 80 can be increased, the deflection increment ΔW of the protective film 80 can be reduced, and the longitudinal deformation resistance of the protective film 80 can be improved, thereby further improving the scratch resistance of the protective film 80 and enhancing the protective effect of the protective film 80 on the display device.

[0184] The process of forming the hard coating 52 includes:

[0185] Step G1: Mix a cationic initiator, such as a thioonium salt, with a methyl ladder-type silsesquioxane or a cage-type silsesquioxane at a ratio of 3% and 97%, respectively. Then, mix this mixture with tetrahydrofuran at a ratio of 1:2 and stir until homogeneous. The molecular structure of the thioonium salt is as follows: Figure 26A As shown, the analytical structure of methyl ladder-like silsesquioxanes is as follows: Figure 26B As shown, the molecular structure of cage-like silsesquioxanes is as follows: Figure 26C As shown.

[0186] Step G2: Use a 5μm wire rod to coat the solution onto the PET layer at a coating speed of approximately 5–10 mm / s.

[0187] Step G3: Remove the solvent by heating in a vacuum environment. Specifically, the heating temperature is between 25°C and 80°C, and the heating time is between 5 and 10 minutes.

[0188] Step G4: UV curing for 15-20 minutes, with UV energy of 1-3 J / cm2. During the curing process, the photoinitiator will generate a large amount of H, which will promote the epoxy groups to undergo polymerization in the ACE (active-chain end) mode. As the active centers of the epoxy groups gradually decrease, the polymerization reaction will gradually stop and the conversion rate will reach saturation.

[0189] Step G5: Perform moist heat annealing at 60°C and 90% humidity for 2 hours. Introducing moisture during annealing can anneal the R3O groups on the epoxy groups. + It reacts with water molecules, producing a -OH group at the end and generating an H+ ion. The newly generated H+ ion reacts with a neutral epoxy group to produce a reactive secondary R2HO group. + This causes the ACE reaction to occur again, increasing polymerization until film formation is complete and a hard coating is formed 52.

[0190] In one implementation, combined with Figure 23 Before forming the second film layer 6, the manufacturing method also includes forming an adhesive layer 55.

[0191] The process of forming the adhesive layer 55 includes: preparing an adhesive layer solution and preparing the adhesive layer 55 using the prepared adhesive layer solution. The adhesive layer solution is synthesized from materials comprising the following mass percentages: 40%–66% first soft monomer, 2%–8% second soft monomer, 0.05%–0.4% initiator, 0.05%–0.5% crosslinking agent, 2%–10% hard monomer, and 30%–50% macromolecular polymer. The glass transition temperatures of the first and second soft monomers are less than or equal to -40°C, and the glass transition temperature of the hard monomer is greater than or equal to 0°C. At this temperature, the glass transition temperature of the adhesive layer 55 is relatively low, thus giving the adhesive layer 55 high viscoelastic properties over a wide temperature range, improving the bending performance of the display device at low temperatures, and extending its service life.

[0192] The process of preparing the adhesive layer solution includes:

[0193] Step W1: Use the first soft monomer (such as isooctyl acrylate) as a solution to dilute the initiator and crosslinking agent, and prepare initiator solutions and crosslinking agent solutions with a concentration of 1% respectively.

[0194] Step W2: According to the formula, use a stirrer or reactor to dissolve and dilute the first soft monomer (such as isooctyl acrylate) into the macromolecular polymer (such as modified acrylate prepolymer).

[0195] Step W3: According to the mixing ratio, prepare the adhesive solution by mixing the second soft monomer (e.g., hydroxybutyl acrylate), the hard monomer (e.g., dicyclopentyl acrylate), and the initiator solution diluted with the first soft monomer (e.g., isooctyl acrylate). It should be noted that the actual mass of the solution added can be multiplied by 100 from the values ​​in Table 1.

[0196] Step W4: Irradiate the above adhesive solution under an ultraviolet lamp with a wavelength of about 365nm and observe and measure its viscosity in real time. Stop irradiation when the viscosity is about 4000 to 6000 cps.

[0197] Step W5: According to the ratio, add the crosslinking agent solution diluted with the first soft monomer (such as isooctyl acrylate) to the solution, and stir to form a gel layer solution.

[0198] The process of preparing adhesive layer 55 includes:

[0199] Step R1: Set the gasket thickness or the scraper gap of the coating machine according to the required thickness of the adhesive layer.

[0200] Step R2: Apply the prepared adhesive solution onto release film or PET film or other film materials using a coating filament or coating machine.

[0201] Step R3: Apply a release film or PET film or other film material onto the coated adhesive solution.

[0202] Step R4: Irradiate the adhesive layer under a 365nm ultraviolet lamp for 1 to 5 minutes until the adhesive layer is cured.

[0203] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the scope of protection of the present invention.

[0204] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, and not to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features; and these modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A display device, characterized in that, include: An array substrate, the array substrate comprising a substrate and an array layer located on one side of the substrate; A cover plate, the cover plate being located on the side of the array layer facing away from the substrate, the cover plate comprising a first film layer and a second film layer, the first film layer being located on the side of the second film layer facing away from the substrate; The first film layer is formed of a high modulus material, the elastic modulus of which is E1, 50 MPa ≤ E1 ≤ 5 GPa, and the elastic modulus of the second film layer is E2, 10 kPa ≤ E2 ≤ 500 MPa. The cover plate further includes a third film layer, which is located on the side of the second film layer facing the substrate. The third film layer is formed of a high-modulus material, and the elastic modulus of the high-modulus material is E3, 50 MPa ≤ E3 ≤ 5 GPa. The second film layer includes a modified energy-absorbing and impact-resistant material. The molecular structure of the modified energy-absorbing and impact-resistant material includes a bonded polymer molecular backbone and a modified polymer molecular backbone. The modified polymer molecular backbone has hydrogen bonds or coordination bonds, and the coordination bonds include boron-oxygen bonds, metal-catechol bonds, or metal-histidine bonds.

2. The display device according to claim 1, characterized in that, The second film layer is formed of a modified energy-absorbing and impact-resistant material with viscous and shear-thickening properties, including modified silicone, modified thermoplastic polyurethane elastomer rubber, modified polyurethane, or modified shear-thickening material.

3. The display device according to claim 1, characterized in that, The modified energy-absorbing and impact-resistant material has viscous and shear-thickening properties.

4. The display device according to claim 1, characterized in that, In a direction perpendicular to the plane of the substrate, the thickness of the first film layer is less than the thickness of the second film layer.

5. The display device according to claim 1, characterized in that, The cover plate further includes a fourth film layer located on the side of the second film layer facing the substrate, the fourth film layer being formed of a modified energy-absorbing and impact-resistant material having viscous and shear-thickening properties.

6. The display device according to claim 1, characterized in that, The array layer includes an inorganic insulating layer, at least one of the inorganic insulating layers having a hollow portion, the hollow portion being filled with an organic portion.

7. The display device according to claim 6, characterized in that, The array layer includes a protective layer, a semiconductor layer, a first gate insulating layer, a first gate layer, a second gate insulating layer, a second gate layer, an interlayer insulating layer, and a source / drain layer stacked along the back of the substrate. The inorganic insulating layer includes the protective layer, the first gate insulating layer, the second gate insulating layer, and the interlayer insulating layer. The protective layer has a first cutout portion, which does not overlap with the semiconductor layer in a direction perpendicular to the plane of the substrate. The first gate insulating layer has a second cutout portion, and in a direction perpendicular to the plane of the substrate, the second cutout portion does not overlap with the first gate layer; The second gate insulating layer has a third cutout portion, which does not overlap with the second gate layer in a direction perpendicular to the plane of the substrate. The interlayer insulating layer has a fourth cutout portion, and the display device includes a display area, wherein the fourth cutout portion covers the display area in a direction perpendicular to the plane of the substrate.

8. The display device according to claim 6, characterized in that, The display device includes a display area and a non-display area. The non-display area includes a shift register circuit area and a fan-shaped trace area. The cutout portion is located in the display area and the shift register circuit area. In a direction perpendicular to the plane of the substrate, the cutout portion does not overlap with the fan-shaped trace area.

9. The display device according to claim 1, characterized in that, The display device further includes a protective film located on the side of the cover plate facing away from the substrate; The protective film includes an anti-reflective layer, which includes hollow anti-reflective particles with a particle size of r, 25nm≤r≤30nm, and / or a particle wall thickness of k, 10nm≤k≤12nm.

10. The display device according to claim 9, characterized in that, The protective film also includes a hard coating layer, which is located between the anti-reflective layer and the cover plate; The hardness of the hard coating is h, 1H≤h≤2H, and / or, in the direction perpendicular to the plane of the substrate, the film thickness of the hard coating is D1, 5μm≤D1≤8μm, and / or, the elastic modulus of the hard coating is E4, 80Gpa≤E4≤100Gpa.

11. The display device according to claim 1, characterized in that, The display device further includes an adhesive layer located between the cover plate and the array layer, wherein the glass transition temperature of the adhesive layer is Tg, and Tg≤-40℃.

12. The display device according to claim 11, characterized in that, The adhesive solution forming the adhesive layer is synthesized from materials comprising the following mass percentages: 40%~66% first soft monomer, 2%~8% second soft monomer, 0.05%~0.4% initiator, 0.05%~0.5% crosslinking agent, 2%~10% hard monomer, and 30%~50% macromolecular polymer; The glass transition temperature of the first soft monomer and the second soft monomer is less than or equal to -40°C, and the glass transition temperature of the hard monomer is greater than or equal to 0°C.

13. The display device according to claim 12, characterized in that, The first soft monomer and the second soft monomer each comprise one or more of isooctyl acrylate, n-hexyl acrylate, hydroxybutyl acrylate, and n-butyl acrylate. The hard monomer includes at least one of hydroxy acrylate monomers, carboxy acrylate monomers, amino acrylate monomers, and dicyclopentyl acrylate; The initiator includes a free radical photoinitiator; The crosslinking agent comprises a bifunctional acrylate active polymer, and the molecular weight of the crosslinking agent is greater than or equal to 200 g / mol and less than or equal to 5000 g / mol; The macromolecular polymer is prepared by prepolymerization of the first soft monomer, the second soft monomer, and the hard monomer, and the molecular weight of the macromolecular polymer is greater than or equal to 10 × 10⁻⁶. 4 g / mol and less than or equal to 100 × 10 4 g / mol.

14. The display device according to claim 11, characterized in that, In a direction perpendicular to the plane of the substrate, the film thickness of the adhesive layer is D2, 15μm ≤D2≤100μm, and / or the elastic modulus of the adhesive layer is E5, 5Kpa≤E5≤50Mpa.

15. A method for manufacturing a display device, characterized in that, include: An array layer is formed on the substrate; The process of forming the cover plate includes: forming a second film layer on the side of the array layer facing away from the substrate; forming a first film layer on the side of the second film layer facing away from the substrate, the first film layer being formed of a high-modulus material, the elastic modulus of the high-modulus material being E1, 50 MPa ≤ E1 ≤ 5 GPa; the elastic modulus of the second film layer being E2, 10 kPa ≤ E2 ≤ 500 MPa; the second film layer comprising a modified energy-absorbing and impact-resistant material, the molecular structure of the modified energy-absorbing and impact-resistant material comprising a bonded polymer molecular backbone and a modified polymer molecular backbone, wherein the modified polymer molecular backbone has hydrogen bonds or coordination bonds, the coordination bonds including boron-oxygen bonds, metal-catechol or metal-histidine; Before forming the second film layer, the process of forming the cover plate further includes: forming a third film layer on the side of the array layer opposite to the substrate, the third film layer being formed of a high modulus material, the high modulus material having an elastic modulus of E3, 50 MPa ≤ E3 ≤ 5 GPa.

16. The manufacturing method according to claim 15, characterized in that, Before forming the second film layer, the process of forming the cover plate further includes: a fourth film layer on the side of the array layer opposite to the substrate, the fourth film layer being formed of a modified energy-absorbing and impact-resistant material having viscous and shear-thickening properties.

17. The manufacturing method according to claim 15, characterized in that, The process of forming the array layer includes: forming an inorganic insulating layer, forming a hollow portion in at least one layer of the inorganic insulating layer, and filling the hollow portion with an organic material to form an organic portion.

18. The manufacturing method according to claim 17, characterized in that, The process of forming the array layer includes: A protective layer, a semiconductor layer, a first gate insulating layer, a first gate layer, a second gate insulating layer, a second gate layer, and an interlayer insulating layer are sequentially formed on the substrate. The inorganic insulating layer includes the protective layer, the first gate insulating layer, the second gate insulating layer, and the interlayer insulating layer. The interlayer insulating layer and the second gate insulating layer are etched to form a fourth cutout on the interlayer insulating layer and a third cutout on the second gate insulating layer. In a direction perpendicular to the plane of the substrate, the fourth cutout covers the display area of ​​the display device, and the third cutout does not overlap with the second gate layer. The first gate insulating layer and the protective layer are etched to form a second cutout on the first gate insulating layer and a first cutout on the protective layer. Furthermore, in a direction perpendicular to the plane of the substrate, the second cutout and the first cutout do not overlap with the semiconductor layer and the first gate layer. Organic material is filled into the first hollowed-out portion, the second hollowed-out portion, the third hollowed-out portion, and the fourth hollowed-out portion; Forming source and drain layers.

19. The manufacturing method according to claim 15, characterized in that, After forming the cover plate, the manufacturing method further includes forming a protective film including an anti-reflective layer; The process of forming the antireflective layer includes: forming a core microsphere / microemulsion through self-assembly or surfactant; preparing a silica shell on the surface of the core microsphere using a sol-gel method; and then repeatedly washing away the core microsphere with a solvent to form hollow silica. The particle size of the hollow silica is r, 25nm≤r≤30nm, and / or the particle wall thickness of the hollow silica is k, 10nm≤k≤12nm.

20. The manufacturing method according to claim 19, characterized in that, Before forming the antireflective layer, the process of forming the protective film further includes forming a hard coating layer, wherein the hard coating layer has a hardness of h, 1H≤h≤2H; and / or, in a direction perpendicular to the plane of the substrate, the film thickness of the hard coating layer is d4, 5μm≤d4≤8μm; and / or, the elastic modulus of the hard coating layer is E4, 80Gpa≤E4≤100Gpa.

21. The manufacturing method according to claim 15, characterized in that, Before forming the second film layer, the manufacturing method further includes forming an adhesive layer; The process of forming the adhesive layer includes: preparing an adhesive layer solution and preparing the adhesive layer using the prepared adhesive layer solution, wherein the adhesive layer solution is synthesized from materials comprising the following mass percentages: 40%~66% of a first soft monomer, 2%~8% of a second soft monomer, 0.05%~0.4% of an initiator, 0.05%~0.5% of a crosslinking agent, 2%~10% of a hard monomer, and 30%~50% of a macromolecular polymer; the glass transition temperature of the first soft monomer and the second soft monomer is less than or equal to -40°C, and the glass transition temperature of the hard monomer is greater than or equal to 0°C.

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