High frequency module and communication device

Abstract

The present invention seeks to improve the heat dissipation of an elastic wave filter. A high-frequency module (100) comprises a mounting substrate (9), an elastic wave filter (1), a resin layer (5) and a shielding layer (6). The mounting substrate (9) has a first main surface (91) and a second main surface (92) facing each other. The elastic wave filter (1) is arranged on the first main surface (91) side of the mounting substrate (9). The resin layer (5) is arranged on the first main surface (91) of the mounting substrate (9) and covers the outer peripheral surface (803) of the elastic wave filter (1). The shielding layer (6) covers the resin layer (5) and the elastic wave filter (1). The shielding layer (6) is in contact with the second main surface (802) of the elastic wave filter (1) on the opposite side of the mounting substrate (9).

Description

Technical Field

[0001] The present invention generally relates to a high-frequency module and a communication device, and more particularly, to a high-frequency module including an elastic wave filter, and a communication device including the high-frequency module. Background Art

[0002] Patent Document 1 discloses a high-frequency module including: a mounting substrate having a first main surface and a second main surface facing each other; a transmission power amplifier mounted on the first main surface of the mounting substrate; a resin member covering the transmission power amplifier; and a shield electrode layer.

[0003] In the high-frequency module disclosed in Patent Document 1, the shield electrode layer is formed so as to cover the top surface and side surfaces of the resin member.

[0004] Furthermore, Patent Document 1 discloses a communication device including a high-frequency module.

[0005] Prior Art Literature

[0006] Patent Literature

[0007] Patent Document 1: International Publication No. 2019 / 181590 Summary of the invention

[0008] Problem that the invention aims to solve

[0009] In a high-frequency module, improvement in heat dissipation is sometimes required in order to suppress a temperature increase of an electronic component (elastic wave filter).

[0010] An object of the present invention is to provide a high-frequency module and a communication device capable of improving the heat dissipation performance of an elastic wave filter.

[0011] Technical solutions to solve problems

[0012] A high-frequency module according to one embodiment of the present invention comprises a mounting substrate, an elastic wave filter, a resin layer, and a shielding layer. The mounting substrate has a first main surface and a second main surface facing each other. The elastic wave filter is arranged on the first main surface side of the mounting substrate. The resin layer is arranged on the first main surface of the mounting substrate and covers the outer peripheral surface of the elastic wave filter. The shielding layer covers the resin layer and the elastic wave filter. The shielding layer is in contact with the main surface of the elastic wave filter on the opposite side of the mounting substrate.

[0013] A communication device according to one embodiment of the present invention includes the high-frequency module and a signal processing circuit. The signal processing circuit is connected to the high-frequency module and performs signal processing on the high-frequency signal.

[0014] Effects of the Invention

[0015] A high-frequency module and a communication device according to one embodiment of the present invention can improve the heat dissipation performance of an elastic wave filter. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 This is a circuit configuration diagram of a communication device including the high-frequency module according to the first embodiment.

[0017] Figure 2 This is a cross-sectional view of the high-frequency module as above.

[0018] Figure 3 This is an enlarged cross-sectional view of a portion of the high-frequency module shown above.

[0019] Figure 4 This is a top view of the high-frequency module as above.

[0020] Figure 5 This is an enlarged cross-sectional view of a part of a high-frequency module according to Modification 1 of Embodiment 1.

[0021] Figure 6 This is an enlarged cross-sectional view of a part of a high-frequency module according to a second modification of the first embodiment.

[0022] Figure 7 This is an enlarged cross-sectional view of a part of a high-frequency module according to Modification 3 of Embodiment 1.

[0023] Figure 8 This is an enlarged cross-sectional view of a part of a high-frequency module according to Modification 4 of Embodiment 1.

[0024] Fig. 9 This is an enlarged cross-sectional view of a part of a high-frequency module according to a fifth modification of the first embodiment.

[0025] Fig.10 This is a cross-sectional view of a high-frequency module according to the second embodiment.

[0026] Fig.11 This is a cross-sectional view of a high-frequency module according to the third embodiment.

[0027] Fig.12 It is a cross-sectional view of a high-frequency module according to a fourth embodiment.

[0028] Fig.13 It is a cross-sectional view of a high-frequency module according to the fifth embodiment.

[0029] Fig.14 It is a cross-sectional view of a high-frequency module according to the sixth embodiment.

[0030] Fig.15It is a cross-sectional view of a high-frequency module according to the seventh embodiment.

[0031] Fig.16 It is a cross-sectional view of a high-frequency module according to the eighth embodiment.

[0032] Fig.17 This is a top view of the high-frequency module as above.

[0033] Fig.18 It is a cross-sectional view of a high-frequency module according to the ninth embodiment.

[0034] Fig.19 This is a cross-sectional view of a high-frequency module according to a tenth embodiment.

[0035] Fig. 20 This is a top view of the high-frequency module as above.

[0036] Fig.21 It is a cross-sectional view of a high-frequency module according to a modification of the tenth embodiment.

[0037] Fig. 22 This is a circuit configuration diagram of a communication device including the high-frequency module according to the eleventh embodiment.

[0038] Fig.23 This is a cross-sectional view of the high-frequency module as above.

[0039] Fig.24 This is a cross-sectional view of a high-frequency module according to Embodiment 12. DETAILED DESCRIPTION

[0040] In the following embodiments, etc., reference is made to Figure 2 to Figure 21 , Fig.23 as well as Fig.24 These are schematic drawings, and the sizes and thickness ratios of the components in the drawings do not necessarily reflect the actual dimensional ratios.

[0041] (Implementation Method 1)

[0042] like Figure 2As shown, the high-frequency module 100 according to the first embodiment includes a mounting substrate 9, an elastic wave filter 1, a resin layer 5, and a shielding layer 6. The mounting substrate 9 has a first main surface 91 and a second main surface 92 facing each other. The elastic wave filter 1 is arranged on the first main surface 91 side of the mounting substrate 9. The resin layer 5 is arranged on the first main surface 91 of the mounting substrate 9 and covers the outer peripheral surface 803 of the elastic wave filter 1. The shielding layer 6 covers the resin layer 5 and the elastic wave filter 1. The shielding layer 6 is in contact with the main surface (second main surface 802) of the elastic wave filter 1 on the opposite side to the mounting substrate 9. Thus, the high-frequency module 100 according to the first embodiment can improve the heat dissipation of the elastic wave filter 1. In this specification, etc., the term "arranged on the first main surface side" includes the case where the elastic wave filter 1 is arranged on the first main surface 91 of the mounting substrate 9 and the case where the elastic wave filter 1 is arranged (laminated) on the main surface of other electronic components arranged on the first main surface 91 of the mounting substrate 9 on the opposite side to the mounting substrate 9.

[0043] Below, refer to Figures 1 to 9 The high-frequency module 100 and the communication device 300 according to the first embodiment will be described.

[0044] (1) High-frequency module and communication device

[0045] (1.1) Circuit structure of high-frequency module and communication device

[0046] First, refer to Figure 1 The circuit configurations of the high-frequency module 100 and the communication device 300 according to the first embodiment will be described.

[0047] The high-frequency module 100 involved in embodiment 1 is used in a communication device 300, for example. The communication device 300 is, for example, a portable phone (for example, a smart phone), but is not limited thereto, and may be, for example, a wearable terminal (for example, a smart watch). The high-frequency module 100 is, for example, a module that can cope with the 4G (4th generation mobile communication) standard and the 5G (5th generation mobile communication) standard. The 4G standard is, for example, the 3GPP (Third Generation Partnership Project) LTE (Long Term Evolution) standard. The 5G standard is, for example, 5G NR (New Radio). The high-frequency module 100 is a module that can cope with carrier aggregation and dual connectivity.

[0048] The high-frequency module 100 is configured, for example, to amplify a transmission signal (high-frequency signal) input from a signal processing circuit 301 and output it to an antenna 310. In addition, the high-frequency module 100 is configured to amplify a reception signal (high-frequency signal) input from an antenna 310 and output it to the signal processing circuit 301. The signal processing circuit 301 is not a component of the high-frequency module 100, but a component of a communication device 300 having the high-frequency module 100. The high-frequency module 100 is controlled, for example, by the signal processing circuit 301 of the communication device 300. The communication device 300 includes the high-frequency module 100 and the signal processing circuit 301. The communication device 300 also includes an antenna 310. The communication device 300 also includes a circuit substrate on which the high-frequency module 100 is mounted. The circuit substrate is, for example, a printed wiring board. The circuit substrate has a ground electrode for providing a ground potential.

[0049] The signal processing circuit 301 includes, for example, an RF signal processing circuit 302 and a baseband signal processing circuit 303. The RF signal processing circuit 302 is, for example, an RFIC (Radio Frequency Integrated Circuit), which performs signal processing on a high-frequency signal. The RF signal processing circuit 302 performs signal processing such as up-conversion on a high-frequency signal (transmitting signal) output from the baseband signal processing circuit 303, and outputs the high-frequency signal subjected to signal processing. In addition, the RF signal processing circuit 302 performs signal processing such as down-conversion on a high-frequency signal (receiving signal) output from the high-frequency module 100, and outputs the high-frequency signal subjected to signal processing to the baseband signal processing circuit 303. The baseband signal processing circuit 303 is, for example, a BBIC (Baseband Integrated Circuit). The baseband signal processing circuit 303 generates an I-phase signal and a Q-phase signal from a baseband signal. The baseband signal is, for example, a sound signal, an image signal, etc. input from the outside. The baseband signal processing circuit 303 performs IQ modulation processing by synthesizing the I-phase signal and the Q-phase signal, and outputs a transmit signal. At this time, the transmission signal is generated as a modulated signal (IQ signal) obtained by amplitude modulating a carrier signal of a given frequency with a period longer than the period of the carrier signal. The received signal processed by the baseband signal processing circuit 303 is used as an image signal for image display, or as a sound signal for communication. The high-frequency module 100 transmits high-frequency signals (received signals, transmitted signals) between the antenna 310 and the RF signal processing circuit 302 of the signal processing circuit 301.

[0050] The high-frequency module 100 includes a power amplifier 111 and a low-noise amplifier 121. In addition, the high-frequency module 100 includes a plurality of (two in the example shown in the figure) transmission filters 112A and 112B and a plurality of (two in the example shown in the figure) reception filters 122A and 122B. In addition, the high-frequency module 100 includes an output matching circuit 113 and an input matching circuit 123. In addition, the high-frequency module 100 includes a first switch 104, a second switch 105, and a third switch 106. In addition, the high-frequency module 100 includes a controller 115. In the high-frequency module 100 according to Embodiment 1, the transmission filter 112A constitutes the elastic wave filter 1 described above. In other words, the elastic wave filter 1 is a transmission filter 112A provided in a signal path T1 for transmitting a signal.

[0051] In addition, the high frequency module 100 includes a plurality of external connection terminals 80. The plurality of external connection terminals 80 include an antenna terminal 81, a signal input terminal 82, a signal output terminal 83, and a plurality of ground terminals 85 (see Figure 2 The plurality of ground terminals 85 are terminals that are electrically connected to the ground electrode of the circuit board included in the communication device 300 to provide a ground potential.

[0052] The power amplifier 111 is provided on a signal path T1 for transmitting signals. The power amplifier 111 has an input terminal and an output terminal. The power amplifier 111 amplifies the transmission signal of the first frequency band input to the input terminal and outputs it to the output terminal. The first frequency band includes, for example, a first communication frequency band and a second communication frequency band. The first communication frequency band corresponds to the transmission signal passing through the transmission filter 112A, for example, Band 11 of the 3GPP LTE standard. The second communication frequency band corresponds to the transmission signal passing through the transmission filter 112B, for example, Band 22 of the 3GPP LTE standard.

[0053] The input terminal of the power amplifier 111 is connected to the signal input terminal 82. The input terminal of the power amplifier 111 is connected to the signal processing circuit 301 via the signal input terminal 82. The signal input terminal 82 is a terminal for inputting a high-frequency signal (transmission signal) from an external circuit (for example, the signal processing circuit 301) to the high-frequency module 100. The output terminal of the power amplifier 111 is connected to the common terminal 150 of the second switch 105 via the output matching circuit 113. The power amplifier 111 is controlled by the controller 115.

[0054] The low noise amplifier 121 is provided in the signal path R1 for receiving signals. The low noise amplifier 121 has an input terminal and an output terminal. The low noise amplifier 121 amplifies the received signal of the second frequency band input to the input terminal and outputs it from the output terminal. The second frequency band is, for example, the same as the first frequency band, and includes a first communication frequency band and a second communication frequency band.

[0055] The input terminal of the low noise amplifier 121 is connected to the common terminal 160 of the third switch 106 via the input matching circuit 123. The output terminal of the low noise amplifier 121 is connected to the signal output terminal 83. The output terminal of the low noise amplifier 121 is connected to the signal processing circuit 301, for example, via the signal output terminal 83. The signal output terminal 83 is a terminal for outputting a high frequency signal (received signal) from the low noise amplifier 121 to an external circuit (for example, the signal processing circuit 301).

[0056] The transmission filter 112A is, for example, a filter that uses the transmission band of the first communication frequency band as a passband, and the transmission filter 112B is, for example, a filter that uses the transmission band of the second communication frequency band as a passband.

[0057] The reception filter 122A is, for example, a filter that uses the reception band of the first communication frequency band as a passband, and the reception filter 122B is, for example, a filter that uses the reception band of the second communication frequency band as a passband.

[0058] The first switch 104 has a common terminal 140 and a plurality of (two in the example shown) selection terminals 141 and 142. The common terminal 140 is connected to the antenna terminal 81. The antenna 310 is connected to the antenna terminal 81. The selection terminal 141 is connected to a connection point between an output terminal of the transmission filter 112A and an input terminal of the reception filter 122A. The selection terminal 142 is connected to a connection point between an output terminal of the transmission filter 112B and an input terminal of the reception filter 122B. The first switch 104 is, for example, a switch capable of connecting at least one of the plurality of selection terminals 141 and 142 to the common terminal 140. Here, the first switch 104 is, for example, a switch capable of performing one-to-one and one-to-many connections.

[0059] The first switch 104 is provided on both sides of the signal path T1 (T11, T12) for the transmission signal and the signal path R1 (R11, R12) for the reception signal. More specifically, the first switch 104 is provided on the signal path T11 for the transmission signal in which the power amplifier 111, the output matching circuit 113, the second switch 105, and the transmission filter 112A are provided. In addition, the first switch 104 is provided on the signal path T12 for the transmission signal in which the power amplifier 111, the output matching circuit 113, the second switch 105, and the transmission filter 112B are provided. In addition, the first switch 104 is provided on the signal path R11 for the reception signal in which the reception filter 122A, the third switch 106, the input matching circuit 123, and the low noise amplifier 121 are provided. In addition, the first switch 104 is provided on the signal path R12 for the reception signal in which the reception filter 122B, the third switch 106, the input matching circuit 123, and the low noise amplifier 121 are provided.

[0060] The first switch 104 is controlled by, for example, the signal processing circuit 301. The first switch 104 switches the connection state between the common terminal 140 and the plurality of selection terminals 141 and 142 according to a control signal from the RF signal processing circuit 302 of the signal processing circuit 301. The first switch 104 is, for example, a switch IC (Integrated Circuit).

[0061] The second switch 105 has a common terminal 150 and a plurality of (two in the example shown) selection terminals 151, 152. The common terminal 150 is connected to the output terminal of the power amplifier 111 via the output matching circuit 113. The selection terminal 151 is connected to the input terminal of the transmission filter 112A. The selection terminal 152 is connected to the input terminal of the transmission filter 112B. The second switch 105 is, for example, a switch capable of connecting at least one of the plurality of selection terminals 151, 152 to the common terminal 150. Here, the second switch 105 is, for example, a switch capable of one-to-one and one-to-many connections. The second switch 105 is a switch having a function of switching the signal paths T11, T12 for a plurality of transmission signals having different communication frequency bands.

[0062] The second switch 105 is controlled by, for example, the signal processing circuit 301. The second switch 105 switches the connection state between the common terminal 150 and the plurality of selection terminals 151 and 152 according to a control signal from the RF signal processing circuit 302 of the signal processing circuit 301. The second switch 105 is, for example, a switch IC.

[0063] The third switch 106 has a common terminal 160 and a plurality of (two in the example shown) selection terminals 161 and 162. The common terminal 160 is connected to the input terminal of the low noise amplifier 121 via the input matching circuit 123. The selection terminal 161 is connected to the output terminal of the receiving filter 122A. The selection terminal 162 is connected to the output terminal of the receiving filter 122B. The third switch 106 is, for example, a switch capable of connecting at least one of the plurality of selection terminals 161 and 162 to the common terminal 160. Here, the third switch 106 is, for example, a switch capable of one-to-one and one-to-many connections. The third switch 106 is a switch having a function of switching the signal paths R11 and R12 for a plurality of reception signals having different communication frequency bands.

[0064] The third switch 106 is controlled by, for example, the signal processing circuit 301. The third switch 106 switches the connection state between the common terminal 160 and the plurality of selection terminals 161 and 162 according to a control signal from the RF signal processing circuit 302 of the signal processing circuit 301. The third switch 106 is, for example, a switch IC.

[0065] The output matching circuit 113 is provided in a signal path between the output terminal of the power amplifier 111 and the common terminal 150 of the second switch 105. The output matching circuit 113 is a circuit for obtaining impedance matching between the power amplifier 111 and the transmission filters 112A and 112B. The output matching circuit 113 includes, for example, one inductor, but is not limited thereto, and may include, for example, a plurality of inductors and a plurality of capacitors.

[0066] The input matching circuit 123 is provided in a signal path between the input terminal of the low noise amplifier 121 and the common terminal 160 of the third switch 106. The input matching circuit 123 is a circuit for obtaining impedance matching between the low noise amplifier 121 and the reception filters 122A and 122B. The input matching circuit 123 includes, for example, one inductor, but is not limited thereto, and may include, for example, a plurality of inductors and a plurality of capacitors.

[0067] The controller 115 is connected to the power amplifier 111. The controller 115 controls the power amplifier 111 according to a control signal from the RF signal processing circuit 302 of the signal processing circuit 301.

[0068] (1.2) Structure of high-frequency module

[0069] Next, refer to Figure 2 to Figure 4 The structure of the high-frequency module 100 according to the first embodiment will be described.

[0070] like Figure 2 As shown, the high frequency module 100 according to the first embodiment includes a mounting substrate 9, a plurality of electronic components 8, and a plurality of external connection terminals 80. The plurality of electronic components 8 include the above-mentioned power amplifier 111, the low noise amplifier 121, the plurality of transmission filters 112A, 112B, the plurality of reception filters 122A, 122B, the output matching circuit 113, and the input matching circuit 123. In addition, the plurality of electronic components 8 further include the above-mentioned first switch 104, the second switch 105, and the third switch 106. That is, the plurality of electronic components 8 include the first electronic component 1 and the second electronic component 2. The first electronic component 1 is, for example, the transmission filter 112A. The second electronic component 2 is, for example, the reception filter 122A.

[0071] The mounting substrate 9 has a first main surface 91 and a second main surface 92 which are opposite to each other in the thickness direction D1 of the mounting substrate 9. The mounting substrate 9 is, for example, a multilayer substrate including a plurality of dielectric layers and a plurality of conductive layers. The plurality of dielectric layers and the plurality of conductive layers are stacked in the thickness direction D1 of the mounting substrate 9. The plurality of conductive layers are formed into a given pattern specified for each layer. Each of the plurality of conductive layers includes one or more conductor portions in a plane orthogonal to the thickness direction D1 of the mounting substrate 9. The material of each conductive layer is, for example, copper. The plurality of conductive layers include a ground layer. In the high-frequency module 100, the plurality of ground terminals 85 and the ground layer are electrically connected via via conductors or the like provided by the mounting substrate 9. The mounting substrate 9 is, for example, an LTCC (Low Temperature Co-fired Ceramics) substrate. The mounting substrate 9 is not limited to an LTCC substrate, and may be, for example, a printed wiring board, an HTCC (High Temperature Co-fired Ceramics) substrate, or a resin multilayer substrate.

[0072] In addition, the mounting substrate 9 is not limited to the LTCC substrate, and may be, for example, a wiring structure. The wiring structure is, for example, a multilayer structure. The multilayer structure includes at least one insulating layer and at least one conductive layer. The insulating layer is formed into a given pattern. When there are multiple insulating layers, the multiple insulating layers are formed into a given pattern specified for each layer. The conductive layer is formed into a given pattern different from the given pattern of the insulating layer. When there are multiple conductive layers, the multiple conductive layers are formed into a given pattern specified for each layer. The conductive layer may also include one or more rewiring portions. In the wiring structure, of the two surfaces facing each other in the thickness direction of the multilayer structure, the first surface is the first main surface 91 of the mounting substrate 9, and the second surface is the second main surface 92 of the mounting substrate 9. The wiring structure may also be, for example, an interposer. The interposer may be an interposer using a silicon substrate or a substrate composed of multiple layers.

[0073] The first principal surface 91 and the second principal surface 92 of the mounting substrate 9 are separated in the thickness direction D1 of the mounting substrate 9 and intersect with the thickness direction D1 of the mounting substrate 9. The first principal surface 91 in the mounting substrate 9 is, for example, orthogonal to the thickness direction D1 of the mounting substrate 9, but for example, the side surface of the conductor part may be included as a surface that is not orthogonal to the thickness direction D1. In addition, the second principal surface 92 in the mounting substrate 9 is, for example, orthogonal to the thickness direction D1 of the mounting substrate 9, but for example, the side surface of the conductor part may be included as a surface that is not orthogonal to the thickness direction D1. In addition, the first principal surface 91 and the second principal surface 92 of the mounting substrate 9 may also be formed with tiny bumps, recesses or protrusions. When viewed from above in the thickness direction D1 of the mounting substrate 9, the mounting substrate 9 is rectangular, but is not limited to this, and may be, for example, square.

[0074] In the high-frequency module 100 according to the first embodiment, a plurality of electronic components 8 are mounted on the first principal surface 91 of the mounting substrate 9. In this specification, etc., the term "mounting" includes a case where the electronic component 8 is arranged on the first principal surface 91 of the mounting substrate 9 (a case where the electronic component 8 is mechanically connected) and a case where the electronic component 8 is electrically connected to (an appropriate conductor portion of) the mounting substrate 9. Therefore, in the high-frequency module 100, a plurality of electronic components 8 are arranged on the first principal surface 91 of the mounting substrate 9. Each of the plurality of electronic components 8 has a first principal surface 801 and a second principal surface 802 that are opposed to each other. Furthermore, each of the plurality of electronic components 8 is arranged on the first principal surface 91 of the mounting substrate 9 so that the first principal surface 801 is on the first principal surface 91 side of the mounting substrate 9 in the thickness direction D1 of the mounting substrate 9. Therefore, the second principal surface 802 of the electronic component 8 constitutes a principal surface that is located on the opposite side of the mounting substrate 9 in the thickness direction D1 of the mounting substrate 9. In addition, each of the plurality of electronic components 8 has an outer peripheral surface 803 that connects the first principal surface 801 and the second principal surface 802. In addition, the high-frequency module 100 is not limited to including only the plurality of electronic components 8 mounted on the mounting substrate 9 , but may also include circuit elements provided in the mounting substrate 9 .

[0075] The power amplifier 111 is, for example, an IC chip, which includes: a substrate having a first main surface and a second main surface facing each other, and a circuit portion (IC portion) having a transistor formed on the first main surface side of the substrate. The substrate is, for example, a gallium arsenide substrate. The circuit portion has a function of amplifying a transmission signal input to an input terminal of the power amplifier 111. The transistor is, for example, an HBT (Heterojunction Bipolar Transistor). The power amplifier 111 may also include, for example, a capacitor for DC blocking. The IC chip including the power amplifier 111 is flip-chip mounted on the first main surface 91 of the mounting substrate 9 so that the first main surface of the first main surface and the second main surface of the substrate is on the first main surface 91 side of the mounting substrate 9. When viewed from above in the thickness direction D1 of the mounting substrate 9, the outer peripheral shape of the IC chip including the power amplifier 111 is a quadrilateral. The substrate in the IC chip including the power amplifier 111 is not limited to a gallium arsenide substrate, and may also be a silicon substrate, a silicon germanium substrate, or a gallium nitride substrate. In addition, the transistor is not limited to a bipolar transistor such as an HBT, and may be, for example, a FET (Field Effect Transistor), for example, a MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor).

[0076] The low noise amplifier 121 is, for example, an IC chip, which includes: a substrate having a first main surface and a second main surface facing each other, and a circuit portion (IC portion) formed on the first main surface side of the substrate. The substrate is, for example, a silicon substrate. The circuit portion has a function of amplifying a received signal input to an input terminal of the low noise amplifier 121. The low noise amplifier 121 is flip-chip mounted on the first main surface 91 of the mounting substrate 9, so that the first main surface of the first main surface and the second main surface of the substrate becomes the first main surface 91 side of the mounting substrate 9. When viewed from above in the thickness direction D1 of the mounting substrate 9, the outer peripheral shape of the low noise amplifier 121 is a quadrilateral.

[0077] Each of the plurality of transmission filters 112A, 112B and the plurality of reception filters 122A, 122B is, for example, a ladder filter having a plurality of (for example, 4) series arm resonators and a plurality of (for example, 3) parallel arm resonators. Each of the plurality of transmission filters 112A, 112B and the plurality of reception filters 122A, 122B is, for example, an elastic wave filter. In the elastic wave filter, the plurality of series arm resonators and the plurality of parallel arm resonators are each constituted by an elastic wave resonator. The elastic wave filter is, for example, a surface acoustic wave filter utilizing surface acoustic waves. That is, in the high frequency module 100 according to the first embodiment, the transmission filter 112A as the first electronic component 1 is an elastic wave filter (hereinafter also referred to as "elastic wave filter 1").

[0078] In the surface acoustic wave filter, each of the plurality of series arm resonators and the plurality of parallel arm resonators is, for example, a SAW (Surface Acoustic Wave) resonator.

[0079] The surface acoustic wave filter includes, for example, a substrate having a first main surface and a second main surface facing each other, and a circuit unit formed on the first main surface side of the substrate. The substrate is a piezoelectric substrate. The piezoelectric substrate is, for example, a lithium niobate substrate. The circuit unit has a plurality of IDT (Interdigital Transducer) electrodes corresponding one-to-one to a plurality of series arm resonators and a plurality of IDT electrodes corresponding one-to-one to a plurality of parallel arm resonators.

[0080] Each of the plurality of transmission filters 112A, 112B and the plurality of reception filters 122A, 122B is, for example, an elastic wave filter of a bare chip. When viewed from above in the thickness direction D1 of the mounting substrate 9, the outer peripheral shape of each of the plurality of transmission filters 112A, 112B and the plurality of reception filters 122A, 122B is a quadrilateral. Each of the plurality of transmission filters 112A, 112B and the plurality of reception filters 122A, 122B is flip-chip mounted on the first main surface 91 of the mounting substrate 9, so that the first main surface of the first main surface and the second main surface of the substrate becomes the mounting substrate 9 side.

[0081] The first switch 104, the second switch 105, and the third switch 106 are each a switch IC. In more detail, the first switch 104, the second switch 105, and the third switch 106 are each, for example, an IC chip, which includes: a substrate having a first main surface and a second main surface facing each other, and a circuit portion (IC portion) having a FET (Field Effect Transistor) formed on the first main surface side of the substrate. The substrate is, for example, a silicon substrate. The circuit portion is a functional portion having a function of switching the connection state of a common terminal and a plurality of selection terminals. When viewed from above in the thickness direction D1 of the mounting substrate 9, the outer peripheral shape of the IC chip constituting each of the first switch 104, the second switch 105, and the third switch 106 is a quadrilateral. The first switch 104 , the second switch 105 , and the third switch 106 are each flip-chip mounted on the first principal surface 91 of the mounting substrate 9 such that the first principal surface of the substrate is on the first principal surface 91 side of the mounting substrate 9 .

[0082] The inductor in the output matching circuit 113 is, for example, a chip inductor. The inductor in the output matching circuit 113 is mounted on, for example, the first main surface 91 of the mounting substrate 9, but is not limited thereto. When viewed from above in the thickness direction D1 of the mounting substrate 9, the outer peripheral shape of the inductor is a quadrilateral.

[0083] The inductor in the input matching circuit 123 is, for example, a chip inductor. The inductor in the input matching circuit 123 is mounted on, for example, the first main surface 91 of the mounting substrate 9, but is not limited thereto. When viewed from above in the thickness direction D1 of the mounting substrate 9, the outer peripheral shape of the inductor is a quadrilateral.

[0084] The plurality of external connection terminals 80 are arranged on the second main surface 92 of the mounting substrate 9. The material of the plurality of external connection terminals 80 is, for example, metal (for example, copper, copper alloy, etc.).

[0085] The plurality of external connection terminals 80 include a plurality of ground terminals 85 in addition to the antenna terminal 81, the signal input terminal 82, and the signal output terminal 83. As described above, the plurality of ground terminals 85 are electrically connected to the ground layer of the mounting substrate 9. The ground layer is a circuit ground of the high-frequency module 100. The plurality of electronic components 8 include an electronic component 8 electrically connected to the ground layer.

[0086] The resin layer 5 covers at least a portion of each of the plurality of electronic components 8 disposed on the first main surface 91 of the mounting substrate 9 on the first main surface 91 side of the mounting substrate 9. The resin layer 5 contains resin. The resin layer 5 may also contain filler in addition to the resin. The resin layer 5 covers the outer peripheral surface 803 of each of the plurality of electronic components 8. In addition, the resin layer 5 also covers the second main surface 802 of the electronic components 8 that are part of the plurality of electronic components 8.

[0087] The shielding layer 6 covers the main surface 51 of the resin layer 5 on the opposite side to the mounting substrate 9, the outer peripheral surface 53 of the resin layer 5, and the outer peripheral surface 93 of the mounting substrate 9. The material of the shielding layer 6 includes, for example, one or more metals. The material of the shielding layer 6 includes, for example, silver. The shielding layer 6 is in contact with the grounding layer of the mounting substrate 9. As a result, the potential of the shielding layer 6 can be made the same as the potential of the grounding layer.

[0088] In the high frequency module 100 according to the first embodiment, Figure 3 As shown, the first electronic component 1 has a first substrate 10, a first circuit portion 14, and a plurality of first pad electrodes 16. The first circuit portion 14 includes a plurality of IDT electrodes 15. The plurality of first pad electrodes 16 are formed on the first main surface 11 side of the first substrate 10 and are connected to the first circuit portion 14. The high-frequency module 100 further includes a plurality of first bumps 101 bonded to the plurality of first pad electrodes 16 and the mounting substrate 9. In the high-frequency module 100, the plurality of IDT electrodes 15 constituting the elastic wave filter of the bare chip of the first electronic component 1 are arranged in a first space SP1, which is a space formed between the first substrate 10 and the mounting substrate 9 by the plurality of first pad electrodes 16, the plurality of first bumps 101, the first substrate 10, the mounting substrate 9, and the resin layer 5.

[0089] In the high-frequency module 100 according to the first embodiment, the thickness of the substrate constituting the first electronic component 1 is different from the thickness of the substrate constituting the second electronic component 2. Specifically, in the high-frequency module 100 according to the first embodiment, the thickness of the substrate constituting the first electronic component 1 is thicker than the thickness of the substrate constituting the second electronic component 2.

[0090] Regarding the first electronic component 1, when the second main surface 12 of the first substrate 10 is roughened, the adhesion with the shielding layer 6 can be improved compared with the case where it is not roughened. Therefore, from the viewpoint of improving the adhesion with the shielding layer 6, it is preferable to roughen the second main surface 12 of the first substrate 10 in advance. In the high-frequency module 100 according to the first embodiment, the second main surface 12 of the first substrate 10 is a rough surface (larger surface roughness) than the main surface (second main surface 802) on the opposite side of the mounting substrate 9 in the electronic component 8 arranged on the first main surface 91 of the mounting substrate 9 and covered with the resin layer 5. Here, the maximum height roughness (Rz) of the second main surface 12 of the first substrate 10 is greater than the maximum height roughness of the second main surface 802 of the electronic component 8 covered with the resin layer 5. Regarding the surface roughness, the maximum height roughness is a value measured from a STEM image when a cross section of the high-frequency module 100 is observed by STEM (Scanning Transmission Electron Microscope). The maximum height roughness is the sum of the maximum value of the peak height and the maximum value of the valley depth in each of the second main surface 12 of the first substrate 10 and the second main surface 802 of the electronic component 8 in the STEM image. In other words, the maximum height roughness is the peak-to-valley value of the concave and convex in each of the second main surface 12 of the first substrate 10 and the second main surface 802 of the electronic component 8. The surface roughness of the second main surface 12 of the first substrate 10 can be changed, for example, according to the conditions of the roughening treatment of the second main surface 12 of the first substrate 10 by grinding or the like during manufacturing. When discussing the relative size relationship of the surface roughness, it is not limited to STEM, and the surface roughness can also be a value obtained from a SEM (Scanning Electron Microscope) image, for example.

[0091] In addition, in the high frequency module 100 according to the first embodiment, as Figure 4 As shown, the shielding layer 6 has an identification mark 600. The identification mark 600 includes a first portion 601. The first portion 601 is a portion of the shielding layer 6 that overlaps with the elastic wave filter 1 in the thickness direction D1 of the mounting substrate 9. Hereinafter, the portion of the shielding layer 6 that does not overlap with the elastic wave filter 1 in the thickness direction D1 of the mounting substrate 9 is referred to as a second portion 602. In the high-frequency module 100 involved in Embodiment 1, for example, light incident from the outside is reflected differently by the first portion 601 and the second portion 602. Therefore, in the high-frequency module 100 involved in Embodiment 1, the color of the first portion 601 and the color of the second portion 602 appear different to a human being. In addition, Figure 4This is a top view of the high-frequency module 100, but dotted hatching is added to the first portion 601 to facilitate identification of the first portion 601 and the second portion 602. The principal surface of the first portion 601 opposite to the first substrate 10 side may have irregularities reflecting the irregularities of the second principal surface 12 of the first substrate 10.

[0092] (2) Method for manufacturing high-frequency module

[0093] Next, a method for manufacturing the high-frequency module 100 according to the first embodiment will be briefly described.

[0094] The manufacturing method of the high-frequency module 100 includes, for example, a first step, a second step, a third step, and a fourth step. The first step is a step of arranging a plurality of electronic components 8 including a first electronic component (elastic wave filter) 1 on the first main surface 91 of the mounting substrate 9. The second step is a step of forming a resin material layer that covers the plurality of electronic components 8 and serves as a base of the resin layer 5 on the first main surface 91 side of the mounting substrate 9. The third step is a step of grinding the resin material layer from the main surface of the resin material layer on the opposite side of the mounting substrate 9 to expose the first substrate 10 of the first electronic component 1, and then grinding the resin material layer and the first substrate 10 to form the resin layer 5 and thin the first substrate 10. The fourth step is a step of forming a shielding layer 6 that is in contact with the main surface 51 of the resin layer 5 and the second main surface 12 of the first substrate 10 by, for example, sputtering, evaporation, or printing.

[0095] (3) Summary

[0096] (3.1) High frequency module

[0097] The high-frequency module 100 according to the first embodiment includes a mounting substrate 9, an elastic wave filter 1, a resin layer 5, and a shielding layer 6. The mounting substrate 9 has a first main surface 91 and a second main surface 92 facing each other. The elastic wave filter 1 is arranged on the first main surface 91 side of the mounting substrate 9. The resin layer 5 is arranged on the first main surface 91 of the mounting substrate 9 and covers the outer peripheral surface 803 of the elastic wave filter 1. The shielding layer 6 covers the resin layer 5 and the elastic wave filter 1. The shielding layer 6 is in contact with the second main surface 802 of the elastic wave filter 1 on the opposite side of the mounting substrate 9.

[0098] In the high-frequency module 100 according to the first embodiment, as described above, the second main surface 802 of the elastic wave filter 1 is in contact with the shielding layer 6, so that the heat generated in the elastic wave filter 1 can be transferred to the shielding layer 6. As a result, the heat dissipation of the elastic wave filter 1 can be improved. Here, in the high-frequency module 100 according to the first embodiment, from the viewpoint of improving the heat dissipation, it is preferable that the shielding layer 6 is in contact with the entire area of ​​the second main surface 12 of the first substrate 10. However, it is not essential that the shielding layer 6 is in contact with the entire area of ​​the second main surface 12 of the first substrate 10.

[0099] Furthermore, in the high-frequency module 100 according to the first embodiment, the heat generated in the elastic wave filter 1 can be dissipated through the second main surface 12 of the first substrate 10 and the shield layer 6. Therefore, in the high-frequency module 100 according to the first embodiment, the temperature rise of the lithium niobate substrate constituting the first substrate 10 can be suppressed. As a result, in the high-frequency module 100 according to the first embodiment, the temperature characteristics of the elastic wave filter 1 can be stabilized, and the characteristics of the high-frequency module 100 can be stabilized.

[0100] Furthermore, in the high-frequency module 100 according to the first embodiment, the second main surface 12 of the first substrate 10 is a rough surface compared to the main surface (second main surface 802) of the electronic component 8 covered by the resin layer 5 on the opposite side to the mounting substrate 9. Thus, in the high-frequency module 100 according to the first embodiment, the adhesion between the first electronic component 1 and the shielding layer 6 can be improved.

[0101] Furthermore, in the high-frequency module 100 according to the first embodiment, unnecessary waves (for example, unnecessary bulk waves) propagating in the direction along the thickness direction of the lithium niobate substrate constituting the first substrate 10 can be scattered at the interface between the first substrate 10 and the shielding layer 6, and the filter characteristics of the elastic wave filter 1 can be improved. Examples of the improvement in the filter characteristics include suppression of harmonic distortion and the like.

[0102] Furthermore, in the high-frequency module 100 according to the first embodiment, the shield layer 6 has the identification mark 600. Thus, in the high-frequency module 100 according to the first embodiment, for example, a person can visually check the identification mark 600.

[0103] (3.2) Communication device

[0104] The communication device 300 according to the first embodiment includes the high-frequency module 100 described above and a signal processing circuit 301. The signal processing circuit 301 is connected to the high-frequency module 100 and performs signal processing on the high-frequency signal.

[0105] Since the communication device 300 according to the first embodiment includes the high-frequency module 100 , it is possible to improve the heat dissipation performance of the elastic wave filter 1 .

[0106] The plurality of electronic components constituting the signal processing circuit 301 may be mounted on the above-mentioned circuit board or on a circuit board (second circuit board) different from the circuit board (first circuit board) on which the high-frequency module 100 is mounted.

[0107] In the high frequency module 100 according to the first embodiment, the first substrate 10 constituting the elastic wave filter 1 is a lithium niobate substrate, but the present invention is not limited thereto. For example, the first substrate 10 may be a lithium tantalate substrate. When the first substrate 10 is a lithium tantalate substrate, the temperature characteristics are inferior to those of a lithium niobate substrate, and the temperature characteristics of the elastic wave filter 1 may be deteriorated. However, by making the second main surface 12 of the first substrate 10 contact the shielding layer 6, the temperature rise of the first substrate 10 can be suppressed, and the temperature characteristics of the elastic wave filter 1 can be stabilized.

[0108] Furthermore, in the high frequency module 100 according to the first embodiment, the second electronic component 2 is the reception filter 122A, but may be another circuit element such as the power amplifier 111 .

[0109] (4) Modification

[0110] The following lists modifications of Embodiment 1. The modifications described below can be combined as appropriate and applied.

[0111] (4.1) Modification 1

[0112] Reference Figure 5 A high frequency module 100a according to Modification 1 of Embodiment 1 will be described. In the high frequency module 100a according to Modification 1, components identical to those of the high frequency module 100 according to Embodiment 1 are denoted by the same reference numerals, and description thereof will be omitted.

[0113] High-frequency module 100 a according to Modification 1 differs from high-frequency module 100 according to Embodiment 1 in that first electronic component 1 constituting elastic wave filter 1 includes first spacer layer 17 , first covering member 18 , and a plurality of first terminals 19 as components of a first package structure.

[0114] The first spacer layer 17 is provided on the first main surface 11 side of the first substrate 10. The first spacer layer 17 surrounds the plurality of IDT electrodes 15 when viewed from above in the thickness direction D1 of the mounting substrate 9. The first spacer layer 17 is in a rectangular frame shape when viewed from above in the thickness direction D1 of the mounting substrate 9. The first spacer layer 17 has electrical insulation. The material of the first spacer layer 17 is epoxy resin, polyimide, etc.

[0115] The first covering member 18 is provided on the first main surface 11 side of the first substrate 10. The first covering member 18 is in the shape of a plate. The first covering member 18 is arranged on the first spacer layer 17 so as to be opposed to the first substrate 10 in the thickness direction D1 of the mounting substrate 9. The first covering member 18 overlaps with the plurality of IDT electrodes 15 in the thickness direction D1 of the mounting substrate 9, and is separated from the plurality of IDT electrodes 15 in the thickness direction D1 of the mounting substrate 9. The first covering member 18 has electrical insulation. The material of the first covering member 18 is epoxy resin, polyimide, etc.

[0116] The first electronic component 1 has a first space S1 surrounded by the first substrate 10, the first spacer 17, and the first cover member 18. A gas such as air or an inert gas (for example, nitrogen) enters the first space S1.

[0117] The plurality of first terminals 19 are exposed from the first covering member 18. Each of the plurality of first terminals 19 is, for example, a bump. Each bump is, for example, a solder bump. Each bump is not limited to a solder bump, and may be, for example, a gold bump.

[0118] In the high-frequency module 100a according to the first modification, the shielding layer 6 is in contact with the second main surface 12 of the first substrate 10, similarly to the high-frequency module 100 according to the first embodiment. In other words, in the high-frequency module 100a according to the first modification, the shielding layer 6 is in contact with the main surface (the second main surface 802) of the elastic wave filter 1 on the opposite side to the mounting substrate 9. Thus, in the high-frequency module 100a according to the first modification, similarly to the high-frequency module 100 according to the first embodiment, it is possible to improve the heat dissipation of the elastic wave filter 1.

[0119] (4.2) Modification 2

[0120] Reference Figure 6 A high frequency module 100b according to a second modification of the first embodiment will be described. In the high frequency module 100b according to the second modification, components identical to those of the high frequency module 100 according to the first embodiment are denoted by the same reference numerals, and description thereof will be omitted.

[0121] The high-frequency module 100b involved in variant example 2 is different from the high-frequency module 100 involved in embodiment 1 in that the first electronic component 1 constituting the elastic wave filter 1, in addition to the first filter chip 171 including the first substrate 10, the first circuit portion 14 and a plurality of first pad electrodes 16, also has a first packaging substrate 173, a plurality of bumps 174 and a first sealing resin portion 175 as components of the first packaging structure.

[0122] The first package substrate 173 includes a first support 1730, a plurality of electrodes 1733, and a plurality of external connection electrodes 1734. The first support 1730 is in the form of a plate, and has a first main surface 1731 and a second main surface 1732 facing each other. The plurality of electrodes 1733 are arranged on the first main surface 1731 of the first support 1730. In addition, the plurality of external connection electrodes 1734 are arranged on the second main surface 1732 of the first support 1730.

[0123] The first package substrate 173 further includes a plurality of through electrodes 1735 that electrically connect the plurality of electrodes 1733 and the plurality of external connection electrodes 1734 one to one. The first support 1730 has electrical insulation. The first support 1730 is, for example, a ceramic substrate (for example, an alumina substrate). The outer peripheral shape of the first package substrate 173 is a rectangle, but is not limited thereto, and may be, for example, a square.

[0124] The plurality of bumps 174 connect the plurality of first pad electrodes 16 of the first filter chip 171 and the plurality of electrodes 1733 of the first package substrate 173 .

[0125] The first sealing resin portion 175 is disposed on the first package substrate 173 and covers the outer peripheral surface of the first filter chip 171. A first space S1 surrounded by the first filter chip 171, the first package substrate 173, and the first sealing resin portion 175 is formed in the first electronic component 1.

[0126] The first electronic component 1 is a CSP (Chip Size Package) type elastic wave filter, in which a first filter chip 171 is flip-chip mounted on a first package substrate 173, and the outer peripheral surface of the first filter chip 171 is covered by a first sealing resin portion 175 on the first package substrate 173. When viewed from the thickness direction of the first filter chip 171, the size of the first package substrate 173 and the first sealing resin portion 175 is slightly larger than the chip size of the first filter chip 171.

[0127] The high-frequency module 100 b further includes a plurality of first bumps 191 bonded to the plurality of external connection electrodes 1734 of the elastic wave filter 1 and the mounting substrate 9 .

[0128] In the high-frequency module 100b according to the second modification, the shielding layer 6 is in contact with the second main surface 12 of the first substrate 10, similarly to the high-frequency module 100 according to the first embodiment. In other words, in the high-frequency module 100b according to the second modification, the shielding layer 6 is in contact with the main surface (the second main surface 802) of the elastic wave filter 1 on the opposite side to the mounting substrate 9. Thus, in the high-frequency module 100b according to the second modification, similarly to the high-frequency module 100 according to the first embodiment, it is possible to improve the heat dissipation of the elastic wave filter 1.

[0129] (4.3) Modification 3

[0130] Reference Figure 7 A high frequency module 100c according to Modification 3 of Embodiment 1 will be described. In the high frequency module 100c according to Modification 3, components identical to those of the high frequency module 100a according to Modification 1 of Embodiment 1 are denoted by the same reference numerals, and description thereof will be omitted.

[0131] The high-frequency module 100c according to the third modification is different from the high-frequency module 100a according to the first modification in that the first electronic component 1 constituting the elastic wave filter 1 is a BAW filter. In the high-frequency module 100c according to the third modification, the first substrate 10 in the first electronic component 1 is a silicon substrate, and each of the plurality of elastic wave resonators is a first BAW (Bulk Acoustic Wave) resonator 180. That is, in the high-frequency module 100c according to the third modification, the first substrate 10 is a support substrate composed of a silicon substrate.

[0132] The first BAW resonator 180 includes a first electrode 181 , a piezoelectric film 182 , and a second electrode 183 . The piezoelectric film 182 is formed on the first electrode 181 . The second electrode 183 is formed on the piezoelectric film 182 .

[0133] The first BAW resonator 180 further includes an electrical insulating film 185 formed on the first main surface 11 of the first substrate 10. The material of the electrical insulating film 185 is, for example, silicon oxide. The material of the piezoelectric film 182 is, for example, AlN, ScAlN, or PZT.

[0134] The first BAW resonator 180 has a cavity 184 on the opposite side of the piezoelectric film 182 in the first electrode 181. The first BAW resonator 180 can suppress the propagation of elastic wave energy toward the first substrate 10 side by increasing the acoustic impedance ratio between the first electrode 181 and the medium directly below the first electrode 181, and can improve the electromechanical coupling coefficient compared to the case without the cavity 184. The first BAW resonator 180 is a FBAR (Film Bulk Acoustic Resonator).

[0135] In the high-frequency module 100c according to the modification example 3, the shielding layer 6 is in contact with the second main surface 12 of the first substrate 10, similarly to the high-frequency module 100a according to the modification example 1. In other words, in the high-frequency module 100c according to the modification example 3, the shielding layer 6 is in contact with the main surface (the second main surface 802) of the elastic wave filter 1 on the opposite side to the mounting substrate 9. Thus, in the high-frequency module 100c according to the modification example 3, similarly to the high-frequency module 100a according to the modification example 1, it is possible to improve the heat dissipation of the elastic wave filter 1.

[0136] (4.4) Modification 4

[0137] Reference Figure 8 A high frequency module 100d according to Modification 4 of Embodiment 1 will be described. In the high frequency module 100d according to Modification 4, components identical to those of the high frequency module 100c according to Modification 3 of Embodiment 1 are denoted by the same reference numerals, and description thereof will be omitted.

[0138] The high-frequency module 100d according to the modification example 4 is different from the high-frequency module 100c according to the modification example 3 in that the first BAW resonator 180 has an acoustic reflection layer A1 interposed between the first substrate 10 and the first electrodes 181 of the plurality of first BAW resonators 180. In the high-frequency module 100d according to the modification example 4, the first substrate 10 is a support substrate composed of a silicon substrate.

[0139] The acoustic reflection layer A1 is provided on the first main surface 11 of the first substrate 10. A plurality of first electrodes 181 are provided on the acoustic reflection layer A1. The acoustic reflection layer A1 has at least one (three in the example shown) low acoustic impedance layer A11 and at least one (two in the example shown) high acoustic impedance layer A12. The acoustic impedance of the low acoustic impedance layer A11 is lower than the acoustic impedance of the high acoustic impedance layer A12.

[0140] In the high-frequency module 100d involved in the modification example 4, the first BAW resonator 180 is an SMR (Solidly Mounted Resonator). The material of the multiple high acoustic impedance layers A12 is, for example, platinum. In addition, the material of the multiple low acoustic impedance layers A11 is, for example, silicon oxide. The material of the multiple high acoustic impedance layers A12 is not limited to platinum, and may be, for example, a metal such as tungsten or tantalum. In addition, the material of the multiple high acoustic impedance layers A12 is not limited to metal, and may be, for example, an insulator. In addition, the multiple high acoustic impedance layers A12 are not limited to the same material as each other, and may be, for example, different materials from each other. In addition, the multiple low acoustic impedance layers A11 are not limited to the same material as each other, and may be, for example, different materials from each other. In addition, the number of high acoustic impedance layers A12 and the number of low acoustic impedance layers A11 are not limited to different situations, and may be the same.

[0141] In the high-frequency module 100d according to the modification example 4, the shielding layer 6 is in contact with the second main surface 12 of the first substrate 10, similarly to the high-frequency module 100c according to the modification example 3. In other words, in the high-frequency module 100d according to the modification example 4, the shielding layer 6 is in contact with the main surface (the second main surface 802) of the elastic wave filter 1 on the opposite side to the mounting substrate 9. Thus, in the high-frequency module 100d according to the modification example 4, similarly to the high-frequency module 100c according to the modification example 3, it is possible to improve the heat dissipation of the elastic wave filter 1.

[0142] (4.5) Modification 5

[0143] Reference Fig. 9 A high frequency module 100e according to a fifth modification of the first embodiment will be described. In the high frequency module 100e according to the fifth modification, components identical to those of the high frequency module 100 according to the first embodiment are denoted by the same reference numerals, and description thereof will be omitted.

[0144] The first electronic component 1 constituting the elastic wave filter 1 is a bare chip elastic wave filter. Fig. 9 As shown, the first electronic component 1 has a first substrate 10, a low acoustic velocity film 193, a piezoelectric layer 194, a plurality of IDT electrodes 15, and a plurality of first pad electrodes 16. The low acoustic velocity film 193 is provided on the first main surface 11 of the first substrate 10. The piezoelectric layer 194 is provided on the low acoustic velocity film 193. A plurality of IDT electrodes 15 are provided on the piezoelectric layer 194. A plurality of first pad electrodes 16 are provided on the first main surface 11 of the first substrate 10. The first electronic component 1 is rectangular when viewed from above in the thickness direction thereof, but is not limited thereto, and may be square, for example.

[0145] The low acoustic velocity film 193 is located at a position separated from the outer periphery of the first substrate 10 when viewed from above in the thickness direction of the elastic wave filter 1. The elastic wave filter 1 further includes an insulating layer 195. The insulating layer 195 covers the area of ​​the first main surface 11 of the first substrate 10 that is not covered by the low acoustic velocity film 193. The insulating layer 195 has electrical insulation. The insulating layer 195 is formed on the first main surface 11 of the first substrate 10 along the outer periphery of the first substrate 10. The insulating layer 195 surrounds the plurality of IDT electrodes 15. When viewed from above in the thickness direction of the elastic wave filter 1, the insulating layer 195 is in a frame shape (for example, a rectangular frame shape). A portion of the insulating layer 195 overlaps with the outer periphery of the piezoelectric layer 194 in the thickness direction of the elastic wave filter 1. The outer periphery of the piezoelectric layer 194 and the outer periphery of the low acoustic velocity film 193 are covered by the insulating layer 195. The material of the insulating layer 195 is epoxy resin, polyimide, or the like.

[0146] The plurality of first pad electrodes 16 are provided on the first main surface 11 of the first substrate 10 via the insulating layer 195 .

[0147] The material of the piezoelectric layer 194 is, for example, lithium niobate or lithium tantalate. The material of the low-acoustic-velocity film 193 is, for example, silicon oxide. In the low-acoustic-velocity film 193, the acoustic velocity of the body wave propagating in the low-acoustic-velocity film 193 is lower than the acoustic velocity of the body wave propagating in the piezoelectric layer 194. The material of the low-acoustic-velocity film 193 is not limited to silicon oxide, and may be, for example, silicon oxide, glass, silicon oxynitride, tantalum oxide, a compound to which fluorine, carbon or boron is added to silicon oxide, or a material having the above materials as main components.

[0148] The first substrate 10 is, for example, a silicon substrate. In the first substrate 10, the acoustic velocity of the bulk wave propagating in the first substrate 10 is higher than the acoustic velocity of the elastic wave propagating in the piezoelectric layer 194. Here, the bulk wave propagating in the first substrate 10 is the bulk wave having the lowest acoustic velocity among the plurality of bulk waves propagating in the first substrate 10. In the high-frequency module 100e involved in the modification example 5, the high-acoustic-velocity member is constituted by the first substrate 10 and the low-acoustic-velocity film 193 provided on the first substrate 10. In addition, in the high-frequency module 100e involved in the modification example 5, the first substrate 10 is a supporting substrate constituted by a silicon substrate.

[0149] When the wavelength of the elastic wave determined by the electrode finger period of the IDT electrode 15 is λ, the thickness of the piezoelectric layer 194 is, for example, 3.5λ or less. The thickness of the low acoustic velocity film 193 is, for example, 2.0λ or less.

[0150] The elastic wave filter 1 may further include a high acoustic velocity film provided between the first substrate 10 and the low acoustic velocity film 193. In the high acoustic velocity film, the acoustic velocity of the body wave propagating in the high acoustic velocity film is higher than the acoustic velocity of the elastic wave propagating in the piezoelectric layer 194. The material of the high acoustic velocity film is, for example, at least one material selected from the group consisting of diamond-like carbon, aluminum nitride, aluminum oxide, silicon carbide, silicon nitride, silicon, sapphire, piezoelectric body (lithium tantalate, lithium niobate, or quartz), alumina, zirconium oxide, cordierite, mullite, steatite, forsterite, magnesium oxide, and diamond. The material of the high acoustic velocity film may also be a material having any of the above materials as a main component, or a material having a mixture containing any of the above materials as a main component.

[0151] The elastic wave filter 1 may include, for example, a bonding layer between the low acoustic velocity film 193 and the piezoelectric layer 194. The bonding layer may include, for example, a resin (epoxy resin, polyimide resin). In addition, the elastic wave filter 1 may include a dielectric film between the low acoustic velocity film 193 and the piezoelectric layer 194, on the piezoelectric layer 194, or under the low acoustic velocity film 193.

[0152] In the high-frequency module 100e according to the fifth modification, the shielding layer 6 is in contact with the second main surface 12 of the first substrate 10, similarly to the high-frequency module 100 according to the first embodiment. In other words, in the high-frequency module 100e according to the fifth modification, the shielding layer 6 is in contact with the main surface (the second main surface 802) of the elastic wave filter 1 on the opposite side to the mounting substrate 9. Thus, in the high-frequency module 100e according to the fifth modification, similarly to the high-frequency module 100 according to the first embodiment, it is possible to improve the heat dissipation of the elastic wave filter 1.

[0153] (Implementation Method 2)

[0154] Reference Fig.10 A high frequency module 100f according to the second embodiment will be described. Regarding the high frequency module 100f according to the second embodiment, the same components as those of the high frequency module 100 according to the first embodiment are denoted by the same reference numerals and the description thereof will be omitted. Figure 1 The high frequency module 100 according to the first embodiment described above has the same circuit configuration.

[0155] In the high-frequency module 100f according to the second embodiment, the first electronic component 1 is an elastic wave filter (hereinafter also referred to as “elastic wave filter 1”). The first electronic component 1 is provided in a signal path T1 for transmitting a signal (see Figure 1 ) of the transmission filter 112A. The second electronic component 2 is provided in the signal path R1 (refer to Figure 1 ) of the receiving filter 122A. The second main surface 802 on the side opposite to the mounting substrate 9 in the first electronic component 1 protrudes in a direction away from the mounting substrate 9 (toward the shielding layer 6 side) relative to the main surface 51 on the side opposite to the mounting substrate 9 in the resin layer 5. As a result, the second main surface 802 of the first electronic component 1 is in contact with the shielding layer 6, and a portion of the outer peripheral surface 803 of the first electronic component 1 is in contact with the shielding layer 6. That is, in the high-frequency module 100f involved in the second embodiment, the shielding layer 6 is in contact with the second main surface 802 and a portion of the outer peripheral surface 803 of the first electronic component 1 constituting the elastic wave filter 1.

[0156] In the high-frequency module 100f according to the second embodiment, the thickness of the substrate constituting the first electronic component 1 is different from the thickness of the substrate constituting the second electronic component 2. Specifically, in the high-frequency module 100f according to the second embodiment, the thickness of the substrate constituting the first electronic component 1 is thicker than the thickness of the substrate constituting the second electronic component 2.

[0157] In the high frequency module 100f according to the second embodiment, the shield layer 6 has an identification mark 600. Fig.10As shown, the identification mark 600 includes a first portion 601. The first portion 601 is a portion of the shielding layer 6 that overlaps with the first electronic component (elastic wave filter) 1 in the thickness direction D1 of the mounting substrate 9. The first portion 601 protrudes in the thickness direction D1 of the mounting substrate 9 in a direction away from the mounting substrate 9 than a second portion 602 of the shielding layer 6 other than the first portion 601.

[0158] In the high-frequency module 100f according to the second embodiment, as described above, the second main surface 802 and a portion of the outer peripheral surface 803 of the first electronic component 1 are in contact with the shielding layer 6. Thus, the heat generated in the first electronic component 1 can be transferred to the shielding layer 6 via the second main surface 802 and the outer peripheral surface 803 of the first electronic component 1, so that the heat dissipation of the first electronic component (elastic wave filter) 1 can be further improved compared to the case where only the second main surface 802 is in contact with the shielding layer 6.

[0159] In the high-frequency module 100f according to the second embodiment, as described above, the first portion 601 of the shield layer 6 protrudes in a direction away from the mounting substrate 9 in the thickness direction D1 of the mounting substrate 9 relative to the second portion 602. Thus, the first portion 601 and the second portion 602 can be distinguished, and the orientation of the high-frequency module 100f can be identified based on the position of the first portion 601. In other words, the first portion 601 of the shield layer 6 functions as an identification mark 600 of the high-frequency module 100f.

[0160] (Implementation method 3)

[0161] Reference Fig.11 A high frequency module 100g according to the third embodiment will be described. Regarding the high frequency module 100g according to the third embodiment, the same components as those of the high frequency module 100 according to the first embodiment are denoted by the same reference numerals and the description thereof will be omitted. Figure 1 The high frequency module 100 according to the first embodiment described above has the same circuit configuration.

[0162] In the high-frequency module 100g according to the third embodiment, the first electronic component 1 is an elastic wave filter (hereinafter also referred to as “elastic wave filter 1”). The first electronic component 1 is provided in a signal path T1 for transmitting a signal (see Figure 1 ) of the transmission filter 112A. The second electronic component 2 is provided in the signal path R1 (refer to Figure 1 ) receiving filter 122A. In the high frequency module 100g according to the third embodiment, as shown in FIG. Fig.11 As shown in FIG. 8 , the second main surface 802 and the outer peripheral surface 803 of the first electronic component 1 constituting the elastic wave filter 1 are in contact with the shielding layer 6. In other words, Fig.11 As shown, the shielding layer 6 includes a first contact portion 61 and a second contact portion 62. The first contact portion 61 is a portion in contact with the second main surface 802 of the first electronic component (elastic wave filter) 1. The second contact portion 62 is a portion in contact with the outer peripheral surface 803 of the first electronic component 1. In the high-frequency module 100g according to the third embodiment, the second main surface 802 of the first electronic component 1 and the main surface 51 of the resin layer 5 on the opposite side to the mounting substrate 9 are substantially flush.

[0163] In the high-frequency module 100g according to the third embodiment, the thickness of the substrate constituting the first electronic component 1 is different from the thickness of the substrate constituting the second electronic component 2. Specifically, in the high-frequency module 100g according to the third embodiment, the thickness of the substrate constituting the first electronic component 1 is thicker than the thickness of the substrate constituting the second electronic component 2.

[0164] In the high-frequency module 100g according to the third embodiment, the second main surface 802 and the outer peripheral surface 803 of the first electronic component (elastic wave filter) 1 are in contact with the shielding layer 6, so that the heat generated in the elastic wave filter 1 can be transferred to the shielding layer 6 via the second main surface 802 and the outer peripheral surface 803. Thus, compared with the case where only the second main surface 802 of the first electronic component 1 is in contact with the shielding layer 6, the heat dissipation of the elastic wave filter 1 can be further improved.

[0165] In the high frequency module 100g according to the third embodiment, the second principal surface 802 of the first electronic component 1 is substantially flush with the principal surface 51 of the resin layer 5 . However, the second principal surface 802 of the first electronic component 1 may protrude in a direction away from the mounting substrate 9 relative to the principal surface 51 of the resin layer 5 .

[0166] (Implementation 4)

[0167] Reference Fig.12 A high frequency module 100h according to a fourth embodiment will be described. In the high frequency module 100h according to the fourth embodiment, the same components as those of the high frequency module 100 according to the first embodiment are denoted by the same reference numerals and their descriptions are omitted. Figure 1 The high frequency module 100 according to the first embodiment described above has the same circuit configuration.

[0168] In the high-frequency module 100h according to the fourth embodiment, the first electronic component 1 is an elastic wave filter (hereinafter also referred to as “elastic wave filter 1”). The first electronic component 1 is provided in a signal path T1 for transmitting a signal (see Figure 1 ) of the transmission filter 112A. The second electronic component 2 is provided in the signal path R1 (refer to Figure 1 )'s receiving filter 122A.

[0169] In the high frequency module 100h according to the fourth embodiment, the first electronic component (elastic wave filter) 1 is mounted on the first main surface 91 of the mounting substrate 9 via a plurality of first bumps 201. In addition, other electronic components 8 including the second electronic component 2 are each mounted on the first main surface 91 of the mounting substrate 9 via a plurality of second bumps 202.

[0170] In the high frequency module 100h according to the fourth embodiment, Fig.12 As shown, the size of each of the plurality of first bumps 201 is larger than the size of each of the plurality of second bumps 202. Specifically, the diameter of each of the first bumps 201 is, for example, 180 nm, and the diameter of each of the second bumps 202 is, for example, 80 nm. In the high-frequency module 100h according to the fourth embodiment, the thickness of the substrate constituting the first electronic component 1 and the thickness of the substrate constituting the second electronic component 2 are substantially the same.

[0171] In the high-frequency module 100 h according to the fourth embodiment, the second main surface 802 of the first electronic component 1 can be brought into contact with the shield layer 6 by making the size of the first bump 201 larger than the size of the second bump 202 .

[0172] In the high-frequency module 100h involved in embodiment 4, when the first electronic component 1 and the second electronic component 2 are mounted on the mounting substrate 9, the first principal surface 801 on the mounting substrate 9 side of the first electronic component (elastic wave filter) 1 is farther away from the mounting substrate 9 than the first principal surface 801 on the mounting substrate 9 side of the second electronic component 2.

[0173] In the high-frequency module 100h according to the fourth embodiment, the size of the first bump 201 is made larger than the size of the second bump 202, so that the second main surface 802 of the first electronic component 1 can be in contact with the shielding layer 6, and the heat generated in the first electronic component 1 can be transferred to the shielding layer 6 via the second main surface 802. Thus, the heat dissipation of the elastic wave filter 1 can be improved.

[0174] In the high-frequency module 100h according to the fourth embodiment, as described above, the position of the first principal surface 801 of the first electronic component 1 is different from the position of the first principal surface 801 of the second electronic component 2. When the first electronic component 1 and the second electronic component 2 are each a filter as in the high-frequency module 100h according to the fourth embodiment, it is possible to reduce signal interference between the first electronic component 1 and the second electronic component 2. In the high-frequency module 100h according to the fourth embodiment, the second electronic component 2 is another element.

[0175] In the high frequency module 100h according to the fourth embodiment, the position of the first electronic component 1 relative to the mounting substrate 9 is changed by changing the size of the first bump 201, but the present invention is not limited thereto. For example, the position of the first electronic component 1 relative to the mounting substrate 9 may be changed by arranging a plurality of bumps of the same size as the second bump 202 in the thickness direction D1 of the mounting substrate 9.

[0176] In the high frequency module 100 h according to the fourth embodiment, the second principal surface 802 of the first electronic component 1 is substantially flush with the principal surface 51 of the resin layer 5 . However, the second principal surface 802 of the first electronic component 1 may protrude in a direction away from the mounting substrate 9 relative to the principal surface 51 of the resin layer 5 .

[0177] (Implementation method 5)

[0178] Reference Fig.13 A high frequency module 100i according to the fifth embodiment will be described. Regarding the high frequency module 100i according to the fifth embodiment, the same components as those of the high frequency module 100 according to the first embodiment are denoted by the same reference numerals and their descriptions are omitted. Figure 1 The high frequency module 100 according to the first embodiment described above has the same circuit configuration.

[0179] In the high-frequency module 100i according to the fifth embodiment, the first electronic component 1 is an elastic wave filter (hereinafter also referred to as “elastic wave filter 1”). The first electronic component 1 is provided in a signal path T1 for transmitting a signal (see Figure 1 ) of the transmission filter 112A. The second electronic component 2 is provided in the signal path R1 (refer to Figure 1 )'s receiving filter 122A.

[0180] The second electronic component 2 is arranged on the first principal surface 91 of the mounting substrate 9. The first electronic component 1 is arranged on the second principal surface 802 of the second electronic component 2. That is, in the high-frequency module 100i involved in the fifth embodiment, the first electronic component 1 and the second electronic component 2 are stacked (stacked) on the first principal surface 91 of the mounting substrate 9. In addition, in the high-frequency module 100i involved in the fifth embodiment, the second principal surface 802 of the first electronic component 1 constituting the elastic wave filter 1 is in contact with the shielding layer 6. In addition, in the high-frequency module 100i involved in the fifth embodiment, the second principal surface 802 of the first electronic component 1 and the principal surface 51 of the resin layer 5 on the opposite side to the mounting substrate 9 are substantially flush. In the high-frequency module 100i involved in the fifth embodiment, the second electronic component 2 is a high-frequency element.

[0181] In the high-frequency module 100i according to the fifth embodiment, the second main surface 802 of the first electronic component (elastic wave filter) 1 is in contact with the shielding layer 6, so that the heat generated in the first electronic component 1 can be transferred to the shielding layer 6 via the second main surface 802 of the first electronic component 1. As a result, the heat dissipation of the elastic wave filter 1 can be improved. In particular, by making the transmission filter 112A, which has a relatively large heat generation, contact the shielding layer 6 among the transmission filter 112A formed by the first electronic component 1 and the reception filter 122A formed by the second electronic component 2, the temperature characteristics of the high-frequency module 100i can be stabilized. In addition, by dissipating the heat generated in the transmission filter 112A via the shielding layer 6, the heat diffusion to other electronic components 8 (including the second electronic component 2 as the reception filter 122A) can be suppressed, and the characteristic fluctuation of other electronic components 8 can be suppressed.

[0182] Furthermore, in the high-frequency module 100i according to the fifth embodiment, by configuring the first electronic component 1 on the second principal surface 802 of the second electronic component 2, the area of ​​the first principal surface 91 of the mounting substrate 9 can be reduced compared to the case where both the first electronic component 1 and the second electronic component 2 are configured on the mounting substrate 9, thereby achieving miniaturization of the size observed in the thickness direction D1 of the mounting substrate 9.

[0183] (Implementation 6)

[0184] Reference Fig.14 A high frequency module 100j according to a sixth embodiment will be described. In the high frequency module 100j according to the sixth embodiment, the same components as those of the high frequency module 100i according to the fifth embodiment are denoted by the same reference numerals and their descriptions are omitted. Figure 1 The high frequency module 100 according to the first embodiment described above has the same circuit configuration.

[0185] In the high-frequency module 100j according to the sixth embodiment, the first electronic component 1 is an elastic wave filter (hereinafter also referred to as “elastic wave filter 1”). The first electronic component 1 is provided in a signal path T1 for transmitting a signal (see Figure 1 ) of the transmission filter 112A. The second electronic component 2 is provided in the signal path R1 (refer to Figure 1 )'s receiving filter 122A.

[0186] The second electronic component 2 is arranged on the first main surface 91 of the mounting substrate 9. The first electronic component 1 is arranged on the second main surface 802 of the second electronic component 2. That is, in the high-frequency module 100j according to the sixth embodiment, the first electronic component 1 and the second electronic component 2 are stacked (stacked) on the first main surface 91 of the mounting substrate 9. In addition, in the high-frequency module 100j according to the sixth embodiment, the second main surface 802 of the first electronic component 1 constituting the elastic wave filter 1 is in contact with the shielding layer 6. In the high-frequency module 100j according to the sixth embodiment, the second electronic component 2 is a high-frequency element.

[0187] Furthermore, in the high-frequency module 100j according to the sixth embodiment, the second principal surface 802 of the first electronic component 1 protrudes in the direction away from the mounting substrate 9 (toward the shielding layer 6 side) from the principal surface 51 of the resin layer 5 on the opposite side to the mounting substrate 9 in the thickness direction D1 of the mounting substrate 9. As a result, the second principal surface 802 of the first electronic component 1 is in contact with the shielding layer 6, and a portion of the outer peripheral surface 803 of the first electronic component 1 is in contact with the shielding layer 6. That is, in the high-frequency module 100j according to the sixth embodiment, the shielding layer 6 is in contact with a portion of the second principal surface 802 and the outer peripheral surface 803 of the first electronic component 1 constituting the elastic wave filter 1. Thus, compared with the case where only the second principal surface 802 of the first electronic component (elastic wave filter) 1 is in contact with the shielding layer 6, it is possible to further improve the heat dissipation of the elastic wave filter 1.

[0188] In the high frequency module 100j according to the sixth embodiment, the shield layer 6 has an identification mark 600. Fig.14 As shown, the identification mark 600 includes a first portion 601. The first portion 601 is a portion of the shield layer 6 that overlaps with the first electronic component (elastic wave filter) 1 in the thickness direction D1 of the mounting substrate 9. The first portion 601 protrudes in the direction away from the mounting substrate 9 than the second portion 602 of the shield layer 6 other than the first portion 601 in the thickness direction D1 of the mounting substrate 9. Thus, the first portion 601 and the second portion 602 can be distinguished, and the direction of the high-frequency module 100j can be identified based on the position of the first portion 601. In other words, the first portion 601 of the shield layer 6 functions as the identification mark 600 of the high-frequency module 100j.

[0189] (Implementation 7)

[0190] Reference Fig.15 A high frequency module 100k according to a seventh embodiment will be described. Regarding the high frequency module 100k according to the seventh embodiment, the same components as those of the high frequency module 100 according to the first embodiment are denoted by the same reference numerals and their descriptions are omitted. In addition, the circuit structure of the high frequency module 100k is the same as that of the reference numeral 100. Figure 1The high frequency module 100 according to the first embodiment described above has the same circuit configuration.

[0191] In the high-frequency module 100k according to the seventh embodiment, the first electronic component 1 is, for example, a single-chip electronic component including a transmission filter 112A and a reception filter 122A. Thus, the high-frequency module 100k according to the seventh embodiment can reduce the area of ​​the first main surface 91 of the mounting substrate 9 compared to the high-frequency module 100 according to the first embodiment, and can achieve miniaturization of the size viewed in the thickness direction D1 of the mounting substrate 9. In the high-frequency module 100k according to the seventh embodiment, the transmission filter 112A of the transmission filter 112A and the reception filter 122A included in the first electronic component 1 is an elastic wave filter (hereinafter also referred to as "elastic wave filter 1").

[0192] In the high-frequency module 100k according to the seventh embodiment, similarly to the high-frequency module 100 according to the first embodiment, the shielding layer 6 and the first substrate 10 (see Figure 3 ) is in contact with the second main surface 12, so that the heat dissipation of the first electronic component (elastic wave filter) 1 can be improved.

[0193] In the high frequency module 100 k according to the seventh embodiment, the second principal surface 802 of the first electronic component 1 is substantially flush with the principal surface 51 of the resin layer 5 . However, the second principal surface 802 of the first electronic component 1 may protrude in a direction away from the mounting substrate 9 relative to the principal surface 51 of the resin layer 5 .

[0194] (Implementation 8)

[0195] Reference Fig.16 as well as Fig.17 A high frequency module 100m according to the eighth embodiment will be described. Regarding the high frequency module 100m according to the eighth embodiment, the same components as those of the high frequency module 100 according to the first embodiment are denoted by the same reference numerals and description thereof will be omitted. Figure 1 The high frequency module 100 according to the first embodiment described above has the same circuit configuration.

[0196] In the high-frequency module 100m according to the eighth embodiment, the first electronic component 1 and the second electronic component 2 are each an elastic wave filter (hereinafter, also referred to as "elastic wave filters 1, 2"). In addition, in the high-frequency module 100m according to the eighth embodiment, the elastic wave filters 1, 2 are each a surface acoustic wave filter. In addition, in the high-frequency module 100m according to the eighth embodiment, the elastic wave filter 1 is provided in the signal path T1 for transmitting signals (refer to Figure 1) of the transmission filter 112A. In the high frequency module 100m according to the eighth embodiment, the elastic wave filter 2 is provided in the signal path R1 (see Figure 1 )'s receiving filter 122A.

[0197] Each of the elastic wave filters 1 and 2 includes, for example, a substrate having a first main surface and a second main surface facing each other, and a circuit unit formed on the first main surface side of the substrate. The substrate is a piezoelectric substrate. The piezoelectric substrate is, for example, a lithium tantalate substrate. The circuit unit has a plurality of IDT electrodes corresponding one-to-one to a plurality of series arm resonators, and a plurality of IDT electrodes corresponding one-to-one to a plurality of parallel arm resonators.

[0198] The elastic wave filters 1 and 2 are each flip-chip mounted on the first main surface 91 of the mounting substrate 9, so that the first main surface of the first and second main surfaces of the substrate is on the mounting substrate 9 side. In the high-frequency module 100m according to the eighth embodiment, the second main surface 802 of each of the elastic wave filters 1 and 2 on the opposite side to the mounting substrate 9 is in contact with the shielding layer 6.

[0199] In the high-frequency module 100m according to the eighth embodiment, the second main surface 802 of the elastic wave filters 1 and 2 on the opposite side to the mounting substrate 9 is in contact with the shielding layer 6. As a result, the heat generated in the elastic wave filters 1 and 2 can be transferred to the shielding layer 6 via the second main surface 802, thereby improving the heat dissipation of the elastic wave filters 1 and 2. In the high-frequency module 100m according to the eighth embodiment, the elastic wave filter (second electronic component) 2 is an electronic component.

[0200] In the high-frequency module 100m according to the eighth embodiment, the substrate constituting the elastic wave filters 1 and 2 is a lithium tantalate substrate having poorer temperature characteristics than a lithium niobate substrate. Therefore, by making the second main surface of the substrate of the elastic wave filters 1 and 2 contact with the shielding layer 6, the temperature characteristics of the elastic wave filters 1 and 2 can be improved.

[0201] In the high frequency module 100m according to the eighth embodiment, the shield layer 6 has an identification mark 600. Fig.17As shown, the identification mark 600 includes a first portion 601 and a third portion 603. The first portion 601 is a portion of the shielding layer 6 that overlaps with the first electronic component (elastic wave filter) 1 in the thickness direction D1 of the mounting substrate 9. The third portion 603 is a portion of the shielding layer 6 that overlaps with the second electronic component 2 in the thickness direction D1 of the mounting substrate 9. In the high-frequency module 100m involved in Embodiment 8, for example, light incident from the outside is reflected differently by the first portion 601 and the third portion 603 and the second portion 602. Therefore, in the high-frequency module 100m involved in Embodiment 8, the colors of the first portion 601 and the third portion 603 are different from the color of the second portion 602 as seen by a human. In addition, Fig.17 This is a plan view of the high-frequency module 100 m , but dotted hatching is given to the first portion 601 and the third portion 603 in order to make the first portion 601 and the third portion 603 and the second portion 602 easier to distinguish.

[0202] In the high-frequency module 100m according to the eighth embodiment, the substrates of the elastic wave filters 1 and 2 are both lithium tantalate substrates, but for example, the substrate of at least one of the elastic wave filters 1 and 2 may be a lithium niobate substrate. Even in this case, by making the elastic wave filters 1 and 2 contact with the shielding layer 6, the temperature characteristics of the elastic wave filters 1 and 2 can be improved.

[0203] (Implementation method 9)

[0204] Reference Fig.18 A high frequency module 100n according to a ninth embodiment will be described. Regarding the high frequency module 100n according to the ninth embodiment, the same components as those of the high frequency module 100 according to the first embodiment are denoted by the same reference numerals and their descriptions are omitted. Figure 1 The high frequency module 100 according to the first embodiment described above has the same circuit configuration.

[0205] In the high-frequency module 100n according to the ninth embodiment, the plurality of electronic components 8 include a first electronic component 1, a second electronic component 2, and a third electronic component 3. The first electronic component 1 and the second electronic component 2 are arranged on the first principal surface 91 of the mounting substrate 9. The third electronic component 3 is arranged on the second principal surface 92 of the mounting substrate 9. That is, the plurality of electronic components 8 are mounted on both the first principal surface 91 and the second principal surface 92 of the mounting substrate 9. Thus, the high-frequency module 100n according to the ninth embodiment can achieve a smaller size as viewed in the thickness direction D1 of the mounting substrate 9 than the high-frequency module 100 according to the first embodiment. In the high-frequency module 100n according to the ninth embodiment, the third electronic component 3 is a circuit element.

[0206] In the high-frequency module 100n according to the ninth embodiment, each of the plurality of external connection terminals 80 includes a columnar electrode 800. Each columnar electrode 800 is, for example, a cylindrical electrode.

[0207] The high frequency module 100 n according to the ninth embodiment further includes a resin layer 7 . The resin layer 7 covers the outer peripheral surface 803 of the third electronic component 3 arranged on the second main surface 92 of the mounting substrate 9 and the outer peripheral surface of the columnar electrode 800 .

[0208] The resin layer 7 is formed so as to expose the second main surface 802 of the electronic component 8 constituting the third electronic component 3. The resin layer 7 contains a resin (e.g., an epoxy resin). The resin layer 7 may contain a filler in addition to the resin. The material of the resin layer 7 may be the same material as that of the resin layer 5 or a material different from that of the resin layer 5. In the high-frequency module 100n according to the ninth embodiment, the shielding layer 6 also covers the outer peripheral surface 73 of the resin layer 7.

[0209] In the high-frequency module 100 n according to the ninth embodiment, the second principal surface 802 of the electronic component 8 constituting the third electronic component 3 is substantially flush with the principal surface 71 of the resin layer 7 on the opposite side to the mounting substrate 9 .

[0210] In the high-frequency module 100n according to the ninth embodiment, similarly to the high-frequency module 100 according to the first embodiment, the shielding layer 6 and the first substrate 10 (see Figure 3 ) is in contact with the second main surface 12, so that the heat dissipation of the first electronic component (elastic wave filter) 1 can be improved.

[0211] In the high frequency module 100n according to the ninth embodiment, the resin layer 7 is formed so as to expose the second main surface 802 of the third electronic component 3, so that the temperature rise of the third electronic component 3 can be suppressed. In the high frequency module 100n according to the ninth embodiment, the height can be reduced in the structure in which the electronic component 8 is also arranged on the second main surface 92 of the mounting substrate 9.

[0212] (Implementation 10)

[0213] Reference Fig.19 as well as Fig. 20 A high frequency module 100p according to a tenth embodiment will be described. Regarding the high frequency module 100p according to the tenth embodiment, the same components as those of the high frequency module 100k according to the seventh embodiment are denoted by the same reference numerals and their descriptions are omitted. Figure 1 The high frequency module 100 according to the first embodiment described above has the same circuit configuration.

[0214] In the high frequency module 100p according to the tenth embodiment, the plurality of electronic components 8 include a first electronic component 1 and a third electronic component 3. The first electronic component 1 includes, for example, a transmission filter 112A (see Figure 1 ) and the receiving filter 122A (refer to Figure 1 ) of a single chip electronic component. The third electronic component 3 includes, for example, a low noise amplifier 121 (see Figure 1 ) IC chip. In the high frequency module 100p according to the tenth embodiment, the mounting substrate 9 includes an inner layer inductor 94 (see Fig. 20 ). The inner layer inductor 94 is, for example, an inductor between the reception filter 122A and the selection terminal 161 of the third switch 106. In the high frequency module 100p according to the tenth embodiment, the third electronic component 3 is a circuit element.

[0215] In the high frequency module 100p according to the tenth embodiment, as shown in FIG. Fig. 20 As shown, at least a portion of the first electronic component 1, at least a portion of the third electronic component 3, and the inner layer inductor 94 overlap in the thickness direction D1 of the mounting substrate 9. This can suppress the parasitic capacitance generated between the inner layer inductor 94 and the ground layer, resulting in reduced power loss.

[0216] In the high-frequency module 100 p according to the tenth embodiment, the entire second principal surface 802 of the third electronic component 3 is exposed, but only a portion of the second principal surface 802 may be exposed.

[0217] (Variation of Implementation Example 10)

[0218] Reference Fig.21 A high frequency module 100r according to a modification of the tenth embodiment will be described. In the high frequency module 100r according to the modification of the tenth embodiment, components identical to those of the high frequency module 100p according to the tenth embodiment are denoted by the same reference numerals, and description thereof will be omitted.

[0219] The high-frequency module 100r according to the modification of the tenth embodiment is different from the high-frequency module 100p according to the tenth embodiment in that the plurality of external connection terminals 80 are ball bumps. The high-frequency module 100r according to the modification of the tenth embodiment is different from the high-frequency module 100p according to the tenth embodiment in that the high-frequency module 100p according to the tenth embodiment does not include the resin layer 7.

[0220] The material constituting the ball bumps of each of the plurality of external connection terminals 80 is, for example, gold, copper, or solder.

[0221] The plurality of external connection terminals 80 may include a mixture of external connection terminals 80 formed of ball bumps and external connection terminals 80 formed of columnar electrodes.

[0222] In the high-frequency module 100r according to the modification of the tenth embodiment, similarly to the high-frequency module 100p according to the tenth embodiment, the shielding layer 6 and the first substrate 10 (see Figure 3 ) is in contact with the second main surface 12 of the first embodiment. Thus, in the high-frequency module 100r according to the modification of the tenth embodiment, the heat dissipation of the elastic wave filter 1 can be improved, similarly to the high-frequency module 100p according to the tenth embodiment. In the high-frequency module 100r according to the modification of the tenth embodiment, the third electronic component 3 is a circuit element.

[0223] (Implementation 11)

[0224] Reference Fig. 22 as well as Fig.23 A high frequency module 100s and a communication device 300s according to Embodiment 11 are described. The same components as those of the high frequency module 100 and the communication device 300 according to Embodiment 1 are denoted by the same reference numerals and their description is omitted.

[0225] The high frequency module 100s according to the eleventh embodiment differs from the high frequency module 100 according to the first embodiment in that the transmission filter 112C and the reception filter 122C constitute the duplexer 132A, and the transmission filter 112D and the reception filter 122D constitute the duplexer 132B.

[0226] The communication device 300 s according to the eleventh embodiment includes the high-frequency module 100 s instead of the above-mentioned high-frequency module 100 . The communication device 300 s according to the eleventh embodiment further includes a signal processing circuit 301 and an antenna 310 .

[0227] In the high frequency module 100s according to the eleventh embodiment, the first electronic component 1 and the second electronic component 2 are elastic wave filters (hereinafter also referred to as “elastic wave filters 1 and 2”). The elastic wave filter 1 is provided in a signal path T1 for transmitting signals (see Fig. 22 ) of the transmission filter 112C. In addition, the elastic wave filter 2 is provided in the signal path R1 (refer to Fig. 22). That is, the first electronic component 1 is the transmission filter 112C of the duplexer 132A having the narrowest interval between the transmission band and the reception band among the plurality of duplexers 132A and 132B. In addition, the second electronic component 2 is the reception filter 122C of the duplexer 132A having the narrowest interval between the transmission band and the reception band among the plurality of duplexers 132A and 132B.

[0228] The first electronic component 1 and the second electronic component 2 each include, for example: a substrate having a first main surface and a second main surface facing each other, and a circuit unit formed on the first main surface side of the substrate. The substrate is a piezoelectric substrate. The piezoelectric substrate is, for example, a lithium niobate substrate. The circuit unit has a plurality of IDT electrodes corresponding one-to-one to a plurality of series arm resonators, and a plurality of IDT electrodes corresponding one-to-one to a plurality of parallel arm resonators.

[0229] The first electronic component 1 and the second electronic component 2 are each flip-chip mounted on the first main surface 91 of the mounting substrate 9 so that the first main surface of the substrate is on the mounting substrate 9 side. In addition, in the high-frequency module 100s according to the eleventh embodiment, the second main surface 802 of each of the first electronic component 1 and the second electronic component 2 on the opposite side to the mounting substrate 9 is in contact with the shielding layer 6. Thus, the heat generated in the first electronic component 1 and the second electronic component 2 can be transferred to the shielding layer 6 via the second main surface 802. Therefore, the heat transferred from the first electronic component 1 to the second electronic component 2 can also be transferred to the shielding layer 6 via the second main surface 802 of the second electronic component 2, and the characteristic degradation of the reception filter 122C constituted by the second electronic component 2 can be reduced. Furthermore, the temperature characteristics of the first electronic component 1 and the second electronic component 2 can be improved, so that degradation of characteristics such as isolation between the transmission filter 112C formed by the first electronic component 1 and the reception filter 122C formed by the second electronic component 2 can be reduced.

[0230] In the high-frequency module 100s involved in embodiment 11, the piezoelectric substrates constituting the first electronic component 1 and the second electronic component 2 are lithium niobate substrates, but at least one of the piezoelectric substrates constituting the first electronic component 1 and the piezoelectric substrates constituting the second electronic component 2 may be, for example, a lithium tantalate substrate or a quartz substrate.

[0231] (Implementation 12)

[0232] Reference Fig.24 A high frequency module 100t according to the twelfth embodiment will be described. Regarding the high frequency module 100t according to the twelfth embodiment, the same components as those of the high frequency module 100s according to the eleventh embodiment are denoted by the same reference numerals and their descriptions are omitted. In addition, the circuit structure of the high frequency module 100t is the same as that of the reference numeral 100s. Fig. 22 The high frequency module 100s according to the eleventh embodiment described above has the same circuit configuration.

[0233] In the high frequency module 100t according to the twelfth embodiment, the plurality of electronic components 8 include a first electronic component 1, a second electronic component 2, and a third electronic component 3. The first electronic component 1, the second electronic component 2, and the third electronic component 3 are each an elastic wave filter (hereinafter also referred to as "elastic wave filters 1, 2, 3"). The elastic wave filter 1 is, for example, provided in a signal path T1 for transmitting a signal (see Fig. 22 ) of the transmission filter 112C. The elastic wave filter 3 is provided in, for example, a signal path R1 (see Fig. 22 ) of the receiving filter 122C. That is, the first electronic component 1 is the transmitting filter 112C of the duplexer 132A having the narrowest interval between the transmitting band and the receiving band among the plurality of duplexers 132A and 132B. In addition, the third electronic component 3 is the receiving filter 122C of the duplexer 132A having the narrowest interval between the transmitting band and the receiving band among the plurality of duplexers 132A and 132B. Furthermore, the elastic wave filter 2 is, for example, provided in the signal path T1 (refer to Fig. 22 )'s transmit filter 112D.

[0234] The first electronic component 1, the second electronic component 2, and the third electronic component 3 each include, for example: a substrate having a first main surface and a second main surface facing each other, and a circuit unit formed on the first main surface side of the substrate. The substrate is a piezoelectric substrate. In the first electronic component 1 and the second electronic component 2, the piezoelectric substrate is, for example, a lithium tantalate substrate. In the third electronic component 3, the piezoelectric substrate is, for example, a lithium niobate substrate. The circuit unit has a plurality of IDT electrodes corresponding one-to-one to a plurality of series arm resonators, and a plurality of IDT electrodes corresponding one-to-one to a plurality of parallel arm resonators.

[0235] The first electronic component 1 and the second electronic component 2 are each flip-chip mounted on the first main surface 91 of the mounting substrate 9 so that the first main surface of the first and second main surfaces of the substrate is on the mounting substrate 9 side. The third electronic component 3 is flip-chip mounted on the second main surface 92 of the mounting substrate 9 so that the first main surface of the first and second main surfaces of the substrate is on the mounting substrate 9 side. That is, the first electronic component 1 and the second electronic component 2 are arranged on the first main surface 91 of the mounting substrate 9, and the third electronic component 3 is arranged on the second main surface 92 of the mounting substrate 9. In the high-frequency module 100t according to the twelfth embodiment, a plurality of electronic components 8 are mounted on both the first main surface 91 and the second main surface 92 of the mounting substrate 9. In the high-frequency module 100t according to the twelfth embodiment, the third electronic component 3 is a circuit element.

[0236] In addition, in the high-frequency module 100t involved in the twelfth embodiment, the first electronic component 1 located on the first main surface 91 of the mounting substrate 9 and the third electronic component 3 located on the second main surface 92 of the mounting substrate 9 are connected by a through electrode 95 that penetrates the mounting substrate 9 in the thickness direction D1 of the mounting substrate 9. The through electrode 95 is, for example, a TSV (through silicon via). An electrical insulating portion is between the through electrode 95 and the mounting substrate 9. The material of the electrical insulating portion is, for example, silicon oxide. The through electrode 95 is, for example, cylindrical.

[0237] In the high-frequency module 100 t according to the twelfth embodiment, a portion of the first electronic component 1 , a portion of the third electronic component 3 , and the through-electrode 95 overlap each other in a plan view from the thickness direction D1 of the mounting substrate 9 .

[0238] In the high-frequency module 100t according to the twelfth embodiment, the first electronic component 1 arranged on the first main surface 91 of the mounting substrate 9 and the second main surface 802 of the second electronic component 2 are in contact with the shielding layer 6. That is, in the high-frequency module 100t according to the twelfth embodiment, the second main surface 802 of the first electronic component 1 whose piezoelectric substrate is a lithium tantalate substrate is in contact with the shielding layer 6, so that the temperature characteristics of the duplexer 132A formed by the transmission filter 112C formed by the first electronic component 1 and the reception filter 122C formed by the third electronic component 3 can be improved. In addition, by respectively arranging the transmitting filter 112C and the receiving filter 122C constituting the duplexer 132A on the first main surface 91 and the second main surface 92 of the mounting substrate 9, and arranging the transmitting filter 112C and the receiving filter 122C to overlap in the thickness direction D1 of the mounting substrate 9, the connecting portion (through electrode 95) between the transmitting filter 112C and the receiving filter 122C becomes shorter, resulting in that the parasitic component can be reduced.

[0239] (Other Modifications)

[0240] The above-mentioned Embodiments 1 to 12 are merely one of various embodiments of the present invention. As long as the object of the present invention can be achieved, the above-mentioned Embodiments 1 to 12 can be variously modified according to design and the like.

[0241] The BAW filter constituting the first electronic component 1 described above has elements of a package structure, but is not limited thereto, and may also be a bare chip BAW filter. In addition, in the BAW filter, when the first BAW resonator 180 is set as an FBAR, it is not limited to Figure 7For example, the first BAW resonator 180 may be configured to form a cavity between a portion of the electrical insulating film 185 and the first main surface 11 of the first substrate 10 instead of forming the cavity 184 in the first substrate 10. In this case, the structure may be such that a first electrode 181 is formed on the side of the electrical insulating film 185 opposite to the cavity, a piezoelectric film 182 is formed on the first electrode 181, and a second electrode 183 is formed on the piezoelectric film 182. The cavity between a portion of the electrical insulating film 185 and the first main surface 11 of the first substrate 10 can be formed, for example, by using a sacrificial layer etching technique.

[0242] Furthermore, filters such as the transmission filters 112A and 112B and the reception filters 122A and 122B are not limited to ladder-type filters, and may be, for example, longitudinally coupled resonator-type surface acoustic wave filters.

[0243] Furthermore, the elastic wave filter described above is an elastic wave filter using surface acoustic waves or bulk acoustic waves, but is not limited thereto, and for example, an elastic wave filter using boundary acoustic waves, plate waves, or the like may also be used.

[0244] Each of the plurality of first bumps 101 and 201 and the plurality of second bumps 202 is, for example, a solder bump, but is not limited thereto, and may be, for example, a gold bump.

[0245] Electronic components 8 other than the first electronic component 1 and the second electronic component 2 among the plurality of electronic components 8 are not limited to being electrically connected to the mounting substrate 9 via bumps, and may be electrically connected to the mounting substrate 9 via bonding wires, for example.

[0246] The circuit configuration of the high-frequency modules 100 to 100 t is not limited to the above-mentioned example. In addition, the high-frequency modules 100 to 100 t may include a high-frequency front-end circuit that supports MIMO (Multi Input Multi Output) as a circuit configuration, for example.

[0247] The communication device 300 according to the first embodiment may include any one of the high-frequency modules 100a to 100r instead of the high-frequency module 100. The communication device 300s according to the eleventh embodiment may include a high-frequency module 100t instead of the high-frequency module 100s.

[0248] The first electronic component 1 is a transmission filter 112A provided in a signal path T1 for transmitting a signal, but the first electronic component 1 is not limited to the transmission filter 112A, and may be, for example, a transceiver filter. The transceiver filter is provided in the signal path T1 for transmitting a signal. In addition, the transceiver filter is provided in the signal path R1 for receiving a signal. The transceiver filter is connected to a power amplifier via a switch in the signal path T1, and allows the transmission signal amplified by the power amplifier to pass. In addition, the transceiver filter is connected to a low noise amplifier via the switch in the signal path R1, and outputs the received signal passed to the low noise amplifier. The transceiver filter is, for example, a filter for TDD.

[0249] (Way)

[0250] The following aspects are disclosed in this specification.

[0251] The high-frequency module (100; 100a to 100t) involved in the first embodiment comprises a mounting substrate (9), an elastic wave filter (1), a resin layer (5), and a shielding layer (6). The mounting substrate (9) has a first main surface (91) and a second main surface (92) facing each other. The elastic wave filter (1) is arranged on the first main surface (91) side of the mounting substrate (9). The resin layer (5) is arranged on the first main surface (91) of the mounting substrate (9) and covers the outer peripheral surface (803) of the elastic wave filter (1). The shielding layer (6) covers the resin layer (5) and the elastic wave filter (1). The shielding layer (6) is in contact with the main surface (802) of the elastic wave filter (1) on the opposite side to the mounting substrate (9).

[0252] According to this aspect, it is possible to improve the heat dissipation performance of the elastic wave filter (1).

[0253] In the high-frequency module (100; 100a; 100b) according to the second embodiment, in the first embodiment, the elastic wave filter (1) has a piezoelectric substrate (10). The principal surface (802) of the elastic wave filter (1) is the principal surface (12) on the opposite side of the piezoelectric substrate (10) from the mounting substrate (9).

[0254] According to this aspect, the temperature rise of the elastic wave filter (1) can be suppressed, and the characteristics can be stabilized.

[0255] In the high-frequency module (100e) involved in the third embodiment, in the first embodiment, the elastic wave filter (1) includes a piezoelectric layer (194), an IDT electrode (15) and a high-acoustic-velocity component (a first substrate 10 and a low-acoustic-velocity film 193). The IDT electrode (15) is arranged on the piezoelectric layer (194). The high-acoustic-velocity component is arranged on the opposite side of the IDT electrode (15) with the piezoelectric layer (194) sandwiched therebetween. In the high-acoustic-velocity component, the acoustic velocity of the propagated body wave is higher than the acoustic velocity of the elastic wave propagating in the piezoelectric layer (194). The high-acoustic-velocity component includes a supporting substrate (10) composed of a silicon substrate. The main surface (802) of the elastic wave filter (1) is the main surface (12) on the opposite side of the mounting substrate (9) in the supporting substrate (10).

[0256] According to this aspect, it is possible to improve the filter performance of the elastic wave filter (1).

[0257] In the high-frequency module (100c; 100d) according to the fourth aspect, in the first aspect, the elastic wave filter (1) has a support substrate (10) formed of a silicon substrate. The principal surface (802) of the elastic wave filter (1) is the principal surface (12) on the opposite side of the support substrate (10) from the mounting substrate (9).

[0258] According to this aspect, it is possible to improve the filter performance of the elastic wave filter (1).

[0259] In a high frequency module (100; 100a to 100t) according to a fifth aspect, in any one of the first to fourth aspects, the elastic wave filter (1) is a transmission filter (112A) or a transmission / reception filter provided in a signal path (T1) for transmitting a signal.

[0260] According to this aspect, it is possible to improve the heat dissipation performance of the transmission filter (112A) or the transmission / reception filter.

[0261] In a high-frequency module (100g) according to a sixth aspect, in any one of the first to fifth aspects, the shielding layer (6) includes a first contact portion (61) and a second contact portion (62). The first contact portion (61) is a portion in contact with a main surface (802) of an elastic wave filter (1). The second contact portion (62) is a portion in contact with an outer peripheral surface (803) of the elastic wave filter (1) along a thickness direction (D1) of a mounting substrate (9).

[0262] According to this aspect, it is possible to further improve the heat dissipation performance of the elastic wave filter (1).

[0263] The high-frequency module (100i; 100j) according to the seventh aspect further comprises a high-frequency element (2) in any one of the first to sixth aspects. The high-frequency element (2) is arranged on a first main surface (91) of a mounting substrate (9). The elastic wave filter (1) is arranged on a main surface (802) of the high-frequency element (2) on the opposite side to the mounting substrate (9).

[0264] According to this embodiment, the heat dissipation of the elastic wave filter (1) can be improved while reducing the area of ​​the first main surface (91) of the mounting substrate (9).

[0265] In the high-frequency module (100i; 100j) according to the eighth aspect, in the seventh aspect, the elastic wave filter (1) is a transmission filter (112A) provided in a signal path (T1) for transmitting signals, and the high-frequency element (2) is a reception filter (122A) provided in a signal path (R1) for receiving signals.

[0266] According to this embodiment, the heat dissipation of the elastic wave filter (1) can be improved while reducing the area of ​​the first main surface (91) of the mounting substrate (9).

[0267] The high-frequency module (100h) according to the ninth aspect further comprises another element (2) in any one of the first to eighth aspects. The other element (2) is arranged on a first main surface (91) of a mounting substrate (9). A main surface (801) on the mounting substrate (9) side of the elastic wave filter (1) is farther from the mounting substrate (9) than a main surface (801) on the mounting substrate (9) side of the other element (2).

[0268] According to this aspect, it is possible to improve the heat dissipation performance of the elastic wave filter (1).

[0269] The high-frequency module (100; 100a to 100t) according to the tenth embodiment is further provided with another electronic component (8) in any one of the first to ninth embodiments. The other electronic component (8) is arranged on the first main surface (91) of the mounting substrate (9) and is covered by the resin layer (5). The maximum height roughness of the main surface (802) of the elastic wave filter (1) is greater than the maximum height roughness of the main surface (802) of the other electronic component (8) covered by the resin layer (5) on the opposite side to the mounting substrate (9).

[0270] According to this aspect, the adhesion between the elastic wave filter (1) and the shielding layer (6) can be improved.

[0271] In the high-frequency module (100; 100a to 100t) according to the eleventh aspect, in any one of the first to ninth aspects, the shielding layer (6) has an identification mark (600). The identification mark (600) is a portion of the shielding layer (6) that overlaps with the elastic wave filter (1) in the thickness direction (D1) of the mounting substrate (9).

[0272] According to this method, a person can visually check the identification mark (600).

[0273] In the high-frequency module (100f; 100j) involved in the twelfth embodiment, in any one of the first to eleventh embodiments, the main surface (802) of the elastic wave filter (1) protrudes toward the shielding layer (6) side relative to the main surface (51) of the resin layer (5) on the opposite side to the mounting substrate (9).

[0274] According to this aspect, it is possible to further improve the heat dissipation performance of the elastic wave filter (1).

[0275] The high-frequency module (100m) according to the 13th aspect is further provided with an electronic component (2) in any one of the first to 12th aspects. The electronic component (2) is arranged on a first main surface (91) of a mounting substrate (9). The shielding layer (6) is in contact with a main surface (802) of the electronic component (2) on the opposite side to the mounting substrate (9).

[0276] According to this embodiment, it is possible to improve the heat dissipation properties of the elastic wave filter (1) and the electronic component (2).

[0277] A high-frequency module (100s) according to a fourteenth aspect is provided in any one of the first to thirteenth aspects, and comprises a transmission filter (112C) and a reception filter (122C) constituting a duplexer (132A) as an elastic wave filter (1). The shielding layer (6) is in contact with a main surface (802) of each of the transmission filter (112C) and the reception filter (122C) on the opposite side to the mounting substrate (9).

[0278] According to this aspect, it is possible to improve the heat dissipation properties of the transmission filter (112C) and the reception filter (122C).

[0279] A high-frequency module (100n; 100p; 100r; 100t) according to a fifteenth aspect is further provided with a circuit element (3) in any one of the first to fourteenth aspects. The circuit element (3) is arranged on a second main surface (92) of a mounting substrate (9).

[0280] According to this embodiment, it is possible to achieve miniaturization of the size viewed in the thickness direction (D1) of the mounting substrate (9).

[0281] In the high-frequency module (100n; 100p; 100r) according to the sixteenth aspect, in the fifteenth aspect, a main surface (802) of the circuit element (3) on the opposite side to the mounting substrate (9) is exposed.

[0282] According to this embodiment, it is possible to achieve miniaturization of the size viewed in the thickness direction (D1) of the mounting substrate (9).

[0283] A high-frequency module (100; 100a to 100t) according to a seventeenth aspect is further provided with an external connection terminal (80) in any one of the first to sixteenth aspects. The external connection terminal (80) is arranged on a second main surface (92) of a mounting substrate (9).

[0284] According to this aspect, it is possible to improve the heat dissipation performance of the elastic wave filter (1).

[0285] A communication device (300; 300s) according to an eighteenth aspect comprises a high frequency module (100; 100a to 100t) according to any one of the first to seventeenth aspects and a signal processing circuit (301). The signal processing circuit (301) is connected to the high frequency module (100; 100a to 100t) and performs signal processing on a high frequency signal.

[0286] According to this aspect, it is possible to improve the heat dissipation performance of the elastic wave filter (1).

[0287] Description of Reference Numerals

[0288] 100, 100a, 100b, 100c, 100d, 100e, 100f, 100g, 100h, 100i, 100j, 100k, 100m, 100n, 100p, 100r, 100s, 100t: high frequency module;

[0289] 1: The first electronic component (elastic wave filter);

[0290] 10: 1st substrate (piezoelectric substrate, supporting substrate);

[0291] 11: The first main surface;

[0292] 12: The second main side;

[0293] 13: outer peripheral surface;

[0294] 14: 1st circuit part;

[0295] 15: IDT electrode;

[0296] 16: 1st pad electrode;

[0297] 17: 1st spacer layer;

[0298] 18: first covering member;

[0299] 19: Terminal 1;

[0300] 193: Low sound velocity membrane;

[0301] 194: piezoelectric layer;

[0302] 195: insulation layer;

[0303] 2: Second electronic components (high frequency components, other components, electronic components);

[0304] 3: The third electronic component (circuit element);

[0305] 5: resin layer;

[0306] 51: Main side;

[0307] 53: outer peripheral surface;

[0308] 6: Shielding layer;

[0309] 61: 1st contact part;

[0310] 62: second contact portion;

[0311] 600: identification mark;

[0312] 601: Part 1;

[0313] 602: Part 2;

[0314] 603: Part 3;

[0315] 7: resin layer;

[0316] 71: Main side;

[0317] 8: Electronic components;

[0318] 801: 1st main surface;

[0319] 802: 2nd main surface;

[0320] 803: outer peripheral surface;

[0321] 9: Install the substrate;

[0322] 91: 1st main surface;

[0323] 92: 2nd main surface;

[0324] 93: outer peripheral surface;

[0325] 80: External connection terminal;

[0326] 81: antenna terminal;

[0327] 82: Signal input terminal;

[0328] 83: signal output terminal;

[0329] 85: ground terminal;

[0330] 101: No. 1 bump;

[0331] 104: 1st switch;

[0332] 140: Common terminal;

[0333] 141, 142: Select terminal;

[0334] 105: 2nd switch;

[0335] 150: common terminal;

[0336] 151, 152: Select terminal;

[0337] 106: 3rd switch;

[0338] 160: Common terminal;

[0339] 161, 162: Select terminal;

[0340] 111: power amplifier;

[0341] 112A, 112B, 112C, 112D: transmission filters;

[0342] 113: output matching circuit;

[0343] 115: controller;

[0344] 121: Low noise amplifier;

[0345] 122A, 122B, 122C, 122D: receiving filters;

[0346] 123: input matching circuit;

[0347] 132A, 132B: duplexer;

[0348] 171: 1st filter chip;

[0349] 173: first packaging substrate;

[0350] 1730: the first supporting body;

[0351] 1731: 1st main surface;

[0352] 1732: 2nd main surface;

[0353] 1733: Electrode;

[0354] 1734: External connection electrodes;

[0355] 1735: through electrode;

[0356] 174: bump;

[0357] 175: 1st sealing resin portion;

[0358] 180: 1st BAW resonator;

[0359] 181: 1st electrode;

[0360] 182: Piezoelectric film;

[0361] 183: second electrode;

[0362] 184: Hollow;

[0363] 185: Electrical insulating film;

[0364] 201: No. 1 bump;

[0365] 202: 2nd bump;

[0366] 300, 300s: communication device;

[0367] 301: signal processing circuit;

[0368] 302: RF signal processing circuit;

[0369] 303: baseband signal processing circuit;

[0370] 310: Antenna;

[0371] A1: sound reflection layer;

[0372] A11: low acoustic impedance layer;

[0373] A12: high acoustic impedance layer;

[0374] D1: thickness direction;

[0375] S1: space 1;

[0376] SP1: Space 1.

Claims

1. A high frequency module, comprising: A mounting substrate having a first main surface and a second main surface facing each other; an elastic wave filter arranged on the first main surface side of the mounting substrate; a resin layer disposed on the first main surface of the mounting substrate and covering the outer peripheral surface of the elastic wave filter; as well as a shielding layer covering the resin layer and the elastic wave filter, The shield layer is in contact with a main surface of the elastic wave filter on the opposite side to the mounting substrate. The shielding layer covers the main surface of the resin layer on the opposite side to the mounting substrate, the outer peripheral surface of the resin layer, and the outer peripheral surface of the mounting substrate. The shield layer includes a first portion overlapping the elastic wave filter in a thickness direction of the mounting substrate and a second portion other than the first portion, and the first portion and the second portion have different colors.

2. The high frequency module according to claim 1, wherein: The elastic wave filter has a piezoelectric substrate. The principal surface of the elastic wave filter is a principal surface on the opposite side to the mounting substrate in the piezoelectric substrate.

3. The high frequency module according to claim 1, wherein: The elastic wave filter has: Piezoelectric layer; An IDT electrode is arranged on the piezoelectric layer; as well as The high-acoustic-velocity member is disposed on the opposite side of the IDT electrode with the piezoelectric layer sandwiched therebetween, and the acoustic velocity of the propagating bulk wave is higher than the acoustic velocity of the elastic wave propagating through the piezoelectric layer. The high acoustic velocity component includes a support substrate composed of a silicon substrate. The main surface of the elastic wave filter is a main surface on the opposite side of the supporting substrate to the mounting substrate.

4. The high frequency module according to claim 1, wherein: The elastic wave filter includes a support substrate formed of a silicon substrate. The main surface of the elastic wave filter is a main surface on the opposite side of the supporting substrate to the mounting substrate.

5. The high frequency module according to any one of claims 1 to 4, wherein: The elastic wave filter is a transmission filter or a transceiver filter provided in a signal path for transmitting a signal.

6. The high frequency module according to any one of claims 1 to 4, wherein: The shielding layer comprises: a first contact portion in contact with the main surface of the elastic wave filter; and The second contact portion is in contact with the outer peripheral surface of the elastic wave filter along the thickness direction of the mounting substrate.

7. The high frequency module according to any one of claims 1 to 4, wherein: It also includes: a high-frequency element arranged on the first main surface of the mounting substrate, The elastic wave filter is disposed on a main surface of the high-frequency element on the opposite side from the mounting substrate.

8. The high frequency module according to claim 7, wherein: The elastic wave filter is a transmission filter provided in a signal path for transmitting a signal. The high-frequency element is a reception filter provided in a signal path for receiving a signal.

9. The high frequency module according to any one of claims 1 to 4, wherein: It also comprises: another element, which is arranged on the first main surface of the mounting substrate, The main surface of the elastic wave filter on the mounting substrate side is further away from the mounting substrate than the main surface of the other element on the mounting substrate side.

10. The high frequency module according to any one of claims 1 to 4, wherein: The device further comprises: another electronic component, which is arranged on the first main surface of the mounting substrate and is covered by the resin layer; The maximum height roughness of the main surface of the elastic wave filter is greater than the maximum height roughness of the main surface of the other electronic component covered by the resin layer on the side opposite to the mounting substrate.

11. The high frequency module according to any one of claims 1 to 4, wherein: The shield layer includes an identification mark that overlaps the elastic wave filter in the thickness direction of the mounting substrate in the shield layer.

12. The high frequency module according to any one of claims 1 to 4, wherein: The main surface of the elastic wave filter protrudes toward the shield layer more than a main surface of the resin layer on the opposite side to the mounting substrate.

13. The high frequency module according to any one of claims 1 to 4, wherein: It also comprises: an electronic component arranged on the first main surface of the mounting substrate, The shielding layer is in contact with a main surface of the electronic component on the opposite side to the mounting substrate.

14. The high frequency module according to any one of claims 1 to 4, wherein: The elastic wave filter includes a transmission filter and a reception filter constituting a duplexer. The shield layer is in contact with a main surface of each of the transmission filter and the reception filter, which main surface is opposite to the mounting substrate.

15. The high frequency module according to any one of claims 1 to 4, wherein: The device further includes a circuit element disposed on the second main surface of the mounting substrate.

16. The high frequency module according to claim 15, wherein: The main surface of the circuit element on the opposite side to the mounting substrate is exposed.

17. The high frequency module according to any one of claims 1 to 4, wherein: The device further includes an external connection terminal disposed on the second main surface of the mounting substrate.

18. A communication device comprising: The high frequency module according to any one of claims 1 to 17; and The signal processing circuit is connected to the high frequency module and performs signal processing on the high frequency signal.

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