Display devices, display modules and electronic devices

Abstract

This disclosure relates to display devices, display modules, and electronic devices. A novel display device with a small gate capacitance of a transistor connected to a scan line is provided. A novel display device with low resistance of the scan line is provided, etc. A novel display device capable of configuring pixels with high resolution is provided, etc. A novel display device capable of being manufactured without increasing costs is provided, etc. In a transistor including a first gate electrode and a second gate electrode, the first gate electrode is made of a low-resistance metal material, and the second gate electrode is made of a metal oxide material capable of reducing oxygen defects in an oxide semiconductor layer. The first gate electrode is connected to a scan line, and the second gate electrode is connected to a wiring supplied with a constant potential.

Description

[0001] This divisional application is a divisional application of Chinese patent application No. 201680076694.4, filed on December 19, 2016, entitled "Display Device, Display Module and Electronic Device". Technical Field

[0002] One aspect of the present invention relates to a display device having transistors comprising oxide semiconductors.

[0003] Note that one aspect of the present invention is not limited to the technical fields described above. The technical field of one aspect of the invention disclosed in this specification relates to an object, method, or manufacturing method. Furthermore, the present invention relates to a process, machine, manufacture, or composition of matter. One aspect of the present invention particularly relates to a semiconductor device, display device, light-emitting device, energy storage device, memory device, its driving method, or its manufacturing method. Background Technology

[0004] The technology of constructing transistors (also known as field-effect transistors (FETs) or thin-film transistors (TFTs)) by utilizing semiconductor layers formed on a substrate with an insulating surface has attracted attention. These transistors are widely used in electronic devices such as integrated circuits (ICs) and image display devices (display devices). Silicon is a well-known semiconductor material that can be used as a semiconductor layer in transistors. In addition, oxide semiconductors have also garnered attention as other materials.

[0005] For example, techniques for forming transistors using amorphous oxides containing In, Zn, Ga, Sn, etc., as oxide semiconductors have been disclosed (see Patent Document 1). Additionally, techniques for forming self-aligned top-gate transistors using oxide layers have been disclosed (see Patent Document 2). Furthermore, techniques for forming transistors in which an oxide layer forming a channel is electrically surrounded by the electric field of the upper and lower gate electrodes to improve field-effect mobility have been disclosed (see Patent Document 3).

[0006] In addition, a manufacturing technique for a transistor with high electrical reliability, such as low threshold voltage drift, has been disclosed, wherein an insulating layer that releases oxygen by heating is used as a base insulating layer for an oxide semiconductor layer in which a channel is formed, thereby reducing oxygen defects in the oxide semiconductor layer (see Patent Document 4).

[0007] [References]

[0008] [Patent Literature]

[0009] [Patent Document 1] Japanese Patent Application Publication No. 2006-165529

[0010] [Patent Document 2] Japanese Patent Application Publication No. 2009-278115

[0011] [Patent Document 3] Japanese Patent Application Publication No. 2014-241404

[0012] [Patent Document 4] Japanese Patent Application Publication No. 2012-009836 Summary of the Invention

[0013] Transistors including oxide layers are expected to be used in display devices. These transistors are required to have high field-effect mobility and high reliability. To achieve high field-effect mobility, it is effective to form transistors with an oxide layer electrically surrounding the channel therein. However, when a transistor with a structure having an oxide layer with a channel electrically surrounded by the electric field of the gate electrode is driven by a scan line signal, there is a problem of excessively large gate capacitance.

[0014] To reduce gate capacitance, using a single-gate structure instead of a structure where the gate electrode surrounds an oxide layer is effective. However, when using a gate electrode with an oxide layer that releases oxygen upon heating as the top gate to achieve high reliability, there are issues with increased gate electrode resistance or increased scan line resistance compared to using a gate electrode made of metal.

[0015] Using a gate electrode that releases oxygen through heating as the top gate is effective in improving transistor reliability. Therefore, to reduce scan line resistance in this structure, using a metal gate electrode as the bottom gate and forming the scan line using metal wiring on one side of the bottom gate is effective. However, the openings used to connect the top and bottom gates are formed in very small areas, such as pixel regions, making their configuration difficult and leading to challenges in manufacturing high-resolution display devices. Furthermore, the structure of reducing scan line resistance by stacking metal wiring on the gate electrode that releases oxygen through heating has the problem of increased manufacturing costs due to added engineering work.

[0016] In view of the above-mentioned problems, one objective of the present invention is to provide a display device, etc., with a novel structure having a small gate capacitance of the transistor connected to the scan line. Another objective of the present invention is to provide a novel display device, etc., with low resistance of the scan line. Another objective of the present invention is to provide a novel display device, etc., capable of configuring pixels with high resolution. Another objective of the present invention is to provide a novel display device, etc., that can be manufactured without increasing costs.

[0017] Note that the purpose of one aspect of the present invention is not limited to the above-described objectives. The above-described objectives do not preclude the existence of other objectives. Other objectives are those not mentioned above but will be described below. Those skilled in the art will derive and extract these other objectives from the description, drawings, etc. Furthermore, one aspect of the present invention achieves at least one of the above-described and other objectives.

[0018] One aspect of the present invention is a display device including a first transistor, a second transistor, a first wiring, and a second wiring. The first transistor includes a first gate electrode, a second gate electrode, and a first semiconductor layer. The second transistor includes a first gate electrode, a second gate electrode, and a second semiconductor layer. The first wiring transmits a signal controlling the conduction state of the first and second transistors. The second wiring transmits a constant voltage. The first gate electrode of the first transistor and the first gate electrode of the second transistor are electrically connected to the first wiring. The second gate electrode of the first transistor and the second gate electrode of the second transistor are electrically connected to the second wiring. The first and second semiconductor layers comprise oxide semiconductors. The first gate electrode of the first transistor and the first gate electrode of the second transistor comprise a metallic material. Furthermore, the second gate electrode of the first transistor and the second gate electrode of the second transistor comprise a metal oxide material.

[0019] One aspect of the present invention is a display device comprising a first transistor, a second transistor, a third transistor, a first wiring, and a second wiring. The first transistor includes a first gate electrode, a second gate electrode, and a first semiconductor layer. The second transistor includes a first gate electrode, a second gate electrode, and a second semiconductor layer. The third transistor includes a first gate electrode, a second gate electrode, and a third semiconductor layer. The first wiring transmits a signal controlling the conduction state of the first and second transistors. The second wiring transmits a constant voltage. The first gate electrode of the first transistor and the first gate electrode of the second transistor are electrically connected to the first wiring. The second gate electrode of the first transistor and the second gate electrode of the second transistor are electrically connected to the second wiring. The first gate electrode of the third transistor and the second gate electrode of the third transistor are electrically connected to each other. The first, second, and third semiconductor layers comprise oxide semiconductors. The first gate electrode of the first transistor, the first gate electrode of the second transistor, and the first gate electrode of the third transistor comprise a metallic material. The second gate electrode of the first transistor, the second gate electrode of the second transistor, and the second gate electrode of the third transistor comprise a metal oxide material.

[0020] One aspect of the present invention is a display device comprising a first transistor, a second transistor, a third transistor, a capacitor element, a light-emitting element, a first wiring, and a second wiring. The first transistor includes a first gate electrode, a second gate electrode, and a first semiconductor layer. The second transistor includes a first gate electrode, a second gate electrode, and a second semiconductor layer. The third transistor includes a first gate electrode, a second gate electrode, and a third semiconductor layer. The first wiring transmits a signal controlling the conduction state of the first and second transistors. The second wiring transmits a constant voltage. The first gate electrode of the first transistor and the first gate electrode of the second transistor are electrically connected to the first wiring. The second gate electrode of the first transistor and the second gate electrode of the second transistor are electrically connected to the second wiring. One of the source and drain electrodes of the first transistor is electrically connected to the first gate electrode of the third transistor, one electrode of the capacitor element, and the second gate electrode of the third transistor. One of the source and drain electrodes of the second transistor is electrically connected to one of the source and drain electrodes of the third transistor, the other electrode of the capacitor element, and one electrode of the light-emitting element. The first, second, and third semiconductor layers comprise oxide semiconductors. The first gate electrode of the first transistor, the first gate electrode of the second transistor, and the first gate electrode of the third transistor comprise a metallic material. The second gate electrode of the first transistor, the second gate electrode of the second transistor, and the second gate electrode of the third transistor are made of metal oxide material.

[0021] One aspect of the present invention is a display device including a pixel electrically connected to a first wiring and a second wiring. The pixel includes a first transistor and a second transistor. The first transistor includes a first gate electrode, a second gate electrode, and a first semiconductor layer. The second transistor includes a first gate electrode, a second gate electrode, and a second semiconductor layer. The first wiring transmits a signal controlling the conduction state of the first transistor and the second transistor. The second wiring transmits a constant voltage. The first gate electrode of the first transistor and the first gate electrode of the second transistor are electrically connected to the first wiring. The second gate electrode of the first transistor and the second gate electrode of the second transistor are electrically connected to the second wiring. The first semiconductor layer and the second semiconductor layer comprise oxide semiconductors. The first gate electrode of the first transistor and the first gate electrode of the second transistor comprise a metallic material. The second gate electrode of the first transistor and the second gate electrode of the second transistor comprise a metal oxide material.

[0022] In one aspect of the display device of the present invention, it is preferred that the oxide semiconductor comprises oxygen, In, Zn and M (M is Al, Ga, Y or Sn).

[0023] In one aspect of the display device of the present invention, the oxide semiconductor preferably includes a crystalline portion having a c-axis orientation.

[0024] In one aspect of the display device of the present invention, the metal oxide material preferably comprises oxygen, In, Zn and M (M is Al, Ga, Y or Sn) and preferably has a higher carrier density than that of an oxide semiconductor.

[0025] In addition, other aspects of the present invention will be described in the following embodiments with reference to the accompanying drawings.

[0026] One aspect of the present invention can provide a novel display device, etc., with a small gate capacitance of the transistor connected to the scan line. Another aspect of the present invention can provide a novel display device, etc., with low resistance of the scan line. Another aspect of the present invention can provide a novel display device, etc., capable of configuring pixels with high resolution. Another aspect of the present invention can provide a novel display device, etc., that can be manufactured without increasing costs.

[0027] Note that the effects of one aspect of the present invention are not limited to those described above. The above-described effects do not preclude the existence of other effects. Other effects are those not mentioned above but will be described below. Those skilled in the art will derive and extract these other effects from the description and drawings, etc. Furthermore, one aspect of the present invention has at least one of the above-described effects and other effects. Therefore, one aspect of the present invention may sometimes not have the above-described effects. Attached Figure Description

[0028] Figure 1A and Figure 1B These are circuit diagrams and timing diagrams of the display device according to the implementation method;

[0029] Figures 2A to 2C These are top views and cross-sectional views of the display device according to the embodiment;

[0030] Figure 3 This is a top view of the display device according to the embodiment;

[0031] Figure 4 This is a perspective view of the display device according to the embodiment;

[0032] Figure 5A and Figure 5B This is a cross-sectional view of the display device according to the embodiment;

[0033] Figure 6A and Figure 6B This is a top view of the display device according to the embodiment;

[0034] Figure 7A and Figure 7B This is a circuit diagram of the display device according to the implementation method;

[0035] Figures 8A to 8C This is a circuit diagram of the display device according to the implementation method;

[0036] Figure 9 Examples of the structure of the display device illustrating the implementation method;

[0037] Figure 10 Examples of the structure of the display device illustrating the implementation method;

[0038] Figure 11 Examples of the structure of the display device illustrating the implementation method;

[0039] Figure 12 An example illustrating the structure of the touch panel in the implementation method;

[0040] Figures 13A to 13D A method for manufacturing the display device according to the embodiments is described;

[0041] Figures 14A to 14D A method for manufacturing the display device according to the embodiments is described;

[0042] Figures 15A to 15D A method for manufacturing the display device according to the embodiments is described;

[0043] Figure 16A and Figure 16B A method for manufacturing the display device according to the embodiments is described;

[0044] Figures 17A to 17C A method for manufacturing the display device according to the embodiments is described;

[0045] Figures 18A to 18F An electronic device describing the implementation method;

[0046] Figures 19A to 19I An electronic device describing the implementation method;

[0047] Figures 20A to 20F An electronic device describing the implementation method;

[0048] Figures 21A to 21E An electronic device describing the implementation method;

[0049] Figures 22A to 22C An electronic device describing the implementation method;

[0050] Figure 23 This is a diagram of the energy band structure of a transistor that contains an oxide semiconductor film in the channel region.

[0051] Figure 24A and Figure 24B This is a circuit diagram of the display device according to the implementation method;

[0052] Figures 25A to 25B This is a circuit diagram of a display device according to an embodiment;

[0053] Figure 26A and Figure 26B These are block diagrams and circuit diagrams of the embodiments;

[0054] Figure 27 This is a top view of an embodiment. Detailed Implementation

[0055] The embodiments and examples will be described in detail with reference to the accompanying drawings. Note that the present invention is not limited to the following description. Those skilled in the art will readily understand that the methods and details can be varied in many ways without departing from the spirit and scope of the invention. Therefore, the present invention should not be construed as being limited to the contents described in the embodiments shown below.

[0056] Furthermore, in the inventive structure described below, the same reference numerals are used in different figures to indicate the same parts or parts with the same function, and repeated descriptions are omitted. In addition, the same shading lines are used to indicate parts with the same function, and sometimes no special reference numerals are added.

[0057] Furthermore, in the various figures described in this specification, the size of each component, the thickness of a layer, or the area are sometimes exaggerated for ease of understanding. Therefore, the size, thickness of a layer, or area is not necessarily limited to the dimensions already described.

[0058] The ordinal numbers such as "first" and "second" used in this specification are appended to avoid confusion of the constituent elements, and are not intended to limit the quantity.

[0059] A transistor is a type of semiconductor device that can amplify current or voltage, control switching operations (turning the device on or off), etc. The transistors discussed in this specification include IGFETs (Insulated Gate Field Effect Transistors) and thin-film transistors (TFTs).

[0060] Furthermore, in cases where transistors with different polarities are used or the current direction changes during circuit operation, the functions of the "source" and "drain" are sometimes interchanged. Therefore, in this specification, the "source" and "drain" can be interchanged.

[0061] Implementation Method 1

[0062] In this embodiment, an example of the structure of a display device according to one aspect of the present invention is described.

[0063] [Example of circuit diagram structure]

[0064] Figure 1AIt is a circuit diagram of the pixels included in the display device.

[0065] A pixel (PIX) includes transistors M1, M2, and M3, a capacitor C1, and a light-emitting element EL. The pixel (PIX) is connected to the scan line GL, signal line SL, current supply line ANODE, wiring V0, and common wiring CATHODE. A pixel (PIX) corresponds to the sub-pixels included in a pixel used for color display. Furthermore, although transistors M1 to M3 are described as n-channel transistors, they can also be p-channel transistors.

[0066] The scan line GL is the wiring that supplies the scan signal to the pixel. The scan signal is the signal that controls the conduction state of the transistor to which the scan signal is supplied. The signal line SL is the wiring that supplies the pixel with the signal corresponding to the image data. The current supply line ANODE and the common wiring CATHODE are wiring used to allow current to flow through the light-emitting element EL. The wiring V0 is the wiring supplied with a constant voltage.

[0067] In transistors M1 and M2, gate electrodes are disposed above and below the semiconductor layer. The gate electrode, made of a metal material and located below the semiconductor layer, is called the first gate electrode (also known as the bottom gate electrode). The gate electrode, made of a metal oxide material and located above the semiconductor layer, is called the second gate electrode (also known as the top gate electrode). Examples of transistor structures that can be used for transistors M1 and M2 will be described later. Although in Figure 1A Transistor M3 has the same structure as transistors M1 and M2, but the structure of transistor M3 is not limited to this. Furthermore, the metal oxide material contains metal elements and oxygen.

[0068] The first gate electrode of transistor M1 is connected to the scan line GL. The second gate electrode of transistor M1 is connected to the wiring V0. One of the source and drain electrodes of transistor M1 is connected to the signal line SL. The other of the source and drain electrodes of transistor M1 is connected to the first and second gate electrodes of transistor M3 and one electrode of capacitor element C1.

[0069] The first gate electrode of transistor M2 is connected to the scan line GL. The second gate electrode of transistor M2 is connected to the wiring V0. One of the source and drain electrodes of transistor M2 is connected to the wiring V0. The other of the source and drain electrodes of transistor M2 is connected to one of the source and drain electrodes of transistor M3, the other electrode of capacitor C1, and one electrode of light-emitting element EL.

[0070] The first gate electrode of transistor M3 is connected to the other of the source and drain electrodes of transistor M1, the second gate electrode of transistor M3, and one electrode of capacitor C1. One of the source and drain electrodes of transistor M3 is connected to the other of the source and drain electrodes of transistor M2, the other electrode of capacitor C1, and one electrode of light-emitting element EL. The other of the source and drain electrodes of transistor M3 is connected to the current supply line ANODE.

[0071] One electrode of capacitor C1 is connected to the other of the source and drain of transistor M1, the first gate electrode of transistor M3, and the second gate electrode of transistor M3. The other electrode of capacitor C1 is connected to the other of the source and drain of transistor M2, one of the source and drain of transistor M3, and one electrode of light-emitting element EL.

[0072] One electrode of the light-emitting element EL is connected to the other of the source and drain of transistor M2, one of the source and drain of transistor M3, and the other electrode of capacitor C1. The other electrode of the light-emitting element EL is connected to the common wiring CATHODE.

[0073] The scan line GL, connected to the first gate electrode of transistor M1 and the first gate electrode of transistor M2, is formed of a metal material beneath the semiconductor layer. The scan line GL is not connected to the first gate electrode of transistor M1 and the first gate electrode of transistor M2 through an opening. The wiring V0, connected to the second gate electrode of transistor M1 and the second gate electrode of transistor M2, is formed of a metal material included in the conductive layer above transistors M1 and M2. The wiring V0 is connected to the second gate electrode of transistor M1 and the second gate electrode of transistor M2 through an opening.

[0074] Figure 1B It is simply shown Figure 1A The timing diagram for the operation of the circuit. Figure 1B This shows a scan selection period (P) for scan line GL(n) in the nth row. SCAN The voltage of wiring V0 and the image signal of signal line SL in the diagram.

[0075] like Figure 1B As shown, in P SCAN In the process, the image signal of signal line SL is converted from signal DATA(n-1) in row n-1 to signal DATA(n) in row n. During this period, the voltage of wiring VO is a constant voltage V0.

[0076] In the above structure, the first and second gate electrodes of transistors M1 and M2 are not connected to each other. Due to this structure, unlike the case where the first and second gate electrodes are connected, the gate capacitance between the scan line GL and the transistor is formed only between the scan line GL and the first gate electrode. Since the wiring V0 is supplied with a constant voltage, the gate capacitance between the wiring V0 and transistors M1 and M2 is not a problem. Therefore, compared to the case where the first and second gate electrodes are connected, the above structure can reduce the gate capacitance between the scan line GL and the transistor. Furthermore, by controlling the constant voltage V0 supplied to the wiring V0, the threshold voltages of transistors M1 and M2 can be adjusted.

[0077] Furthermore, in the above structure, in transistors M1 and M2, scan lines GL made of a metallic material can be arranged in the same layer as the first gate electrode. Therefore, even if the first gate electrode is formed using a conductive layer containing a metallic material and the second gate electrode is formed using a conductive layer containing a metal oxide material such as an oxide semiconductor, problems such as increased resistance of the scan lines GL can be avoided. In addition, the manufacturing cost of the redundant wiring using metallic materials that is set up to reduce the resistance of the scan lines GL can be reduced.

[0078] In the above structure, a conductive layer containing a metallic material can be used to form the first gate electrode, and a conductive layer containing a metal oxide material such as an oxide semiconductor can be used to form the second gate electrode. This allows for the use of a gate electrode that releases oxygen upon heating as the second gate electrode, thereby improving the reliability of the transistor. Furthermore, since the first and second gate electrodes are not connected in transistors M1 and M2, they are not connected in very small areas, such as pixel areas, enabling the manufacture of high-resolution display devices.

[0079] [Example of transistor structure]

[0080] Here, refer to Figures 2A to 2C Provide examples of transistor structures that can be used in transistors M1 and M2.

[0081] Figures 2A to 2C This section describes an example of a semiconductor device that includes transistors. Figures 2A to 2C The transistor shown has a structure in which gate electrodes are disposed on the top and bottom of a semiconductor layer.

[0082] Figure 2A This is a top view of transistor 100. Figure 2B It is along Figure 2A A cross-sectional view of the area between the dotted and dashed lines X1 and X2. Figure 2C It is along Figure 2A The cross-sectional view between the dashed lines Y1 and Y2. For clarity, in Figure 2A In the diagram, components such as insulator 110 are omitted. Sometimes, in the top view of the transistor later, [the following text is incomplete and likely refers to a different context]. Figure 2A Similarly, a portion of the constituent elements is omitted. Furthermore, the direction of the dashed line X1-X2 can be referred to as the channel length (L) direction, and the direction of the dashed line Y1-Y2 can be referred to as the channel width (W) direction.

[0083] Figures 2A to 2C The transistor 100 shown includes: a conductive layer 106 formed on a substrate 102; an insulating layer 104 on the conductive layer 106; an oxide semiconductor layer 108 on the insulating layer 104; an insulating layer 110 on the oxide semiconductor layer 108; an oxide semiconductor layer 112 on the insulating layer 110; and an insulating layer 116 on the insulating layer 104, the oxide semiconductor layer 108, and the oxide semiconductor layer 112. The oxide semiconductor layer 108 has a channel region 108i in contact with the insulating layer 110, a source region 108s in contact with the insulating layer 116, and a drain region 108d in contact with the insulating layer 116.

[0084] The transistor 100 may also include a conductive layer 120a electrically connected to the source region 108s through an opening 141a provided in the insulating layer 116, and a conductive layer 120b electrically connected to the drain region 108d through an opening 141b provided in the insulating layer 116.

[0085] The conductive layer 106 functions as a first gate electrode and is made of a metallic material. The oxide semiconductor layer 112 functions as a second gate electrode and is made of a metal oxide material. The insulating layer 104 functions as a first gate insulating layer, and the insulating layer 110 functions as a second gate insulating layer.

[0086] The insulating layer 116 contains one or both of nitrogen and hydrogen. Nitrogen and / or hydrogen can be supplied to the oxide semiconductor layer 108 and the oxide semiconductor layer 112 from the insulating layer 116 containing nitrogen and / or hydrogen.

[0087] As the insulating layer 116, a nitride insulating layer can be used, for example. This nitride insulating layer can be formed using silicon nitride, silicon oxynitride, aluminum nitride, aluminum oxynitride, etc. The hydrogen concentration contained in the insulating layer 116 is preferably 1 × 10⁻⁶. 22 atoms / cm 3 above.

[0088] The oxide semiconductor layer 112 has the function of supplying oxygen to the insulating layer 110. The oxide semiconductor layer 112's function of supplying oxygen to the insulating layer 110 allows the insulating layer 110 to contain excess oxygen. When the insulating layer 110 has excess oxygen regions, the excess oxygen can be supplied to the oxide semiconductor layer 108, specifically, the channel region 108i. Therefore, a highly reliable semiconductor device can be provided.

[0089] The insulating layer 110 can be formed as a single-layer structure or a stacked structure having an oxide insulating layer or a nitride insulating layer. For example, the insulating layer 110 can be formed as a single-layer structure or a stacked structure having silicon oxide, silicon oxynitride, silicon oxynitride, silicon nitride, aluminum oxide, hafnium oxide, gallium oxide or Ga-Zn oxide, etc.

[0090] Since the insulating layer 110 formed on the oxide semiconductor layer 108 contains excess oxygen, the excess oxygen can be selectively supplied to the channel region 108i. Alternatively, after supplying excess oxygen to the channel region 108i, the source region 108s and the drain region 108d, the carrier density of the source region 108s and the drain region 108d can be selectively increased.

[0091] The thickness of insulating layer 110 is preferably less than the thickness of insulating layer 104. As described above, a constant voltage is supplied from wiring V0 to the oxide semiconductor layer 112, which serves as the second gate electrode. Because the insulating layer 110 is thin, a large parasitic capacitance is formed in transistor 100 using the second gate electrode, the second gate insulating layer, and the oxide semiconductor layer 108. This can suppress insulation breakdown of the transistor caused by electrostatic discharge, etc.

[0092] By supplying nitrogen and / or hydrogen from insulating layer 116, the carrier density in oxide semiconductor layer 112, which supplies oxygen to insulating layer 110, is increased. In other words, oxide semiconductor layer 112 also functions as an oxide conductor (OC). Therefore, the carrier density of oxide semiconductor layer 112 is higher than that of oxide semiconductor layer 108.

[0093] The source region 108s, drain region 108d, and oxide semiconductor layer 112 of oxide semiconductor layer 108 may all contain elements that form oxygen vacancies. Typical examples of elements that form oxygen vacancies are hydrogen, boron, carbon, nitrogen, fluorine, phosphorus, sulfur, chlorine, and noble gases. Typical examples of noble gas elements are helium, neon, argon, krypton, and xenon.

[0094] Impurity elements added to the oxide semiconductor layer break the bonds between the metal elements and oxygen in the oxide semiconductor layer, forming oxygen defects. Alternatively, when an impurity element is added to the oxide semiconductor layer, oxygen bondsed to the metal elements in the oxide semiconductor layer bonds to the impurity element, and the oxygen detaches from the metal elements, forming oxygen defects. As a result, the oxide semiconductor layer has a higher carrier density, and therefore, the conductivity is improved.

[0095] The transistor 100 preferably has a region where the side ends of the insulating layer 110 and the side ends of the oxide semiconductor layer 112 are aligned. In other words, in the transistor 100, the upper end of the insulating layer 110 and the lower end of the oxide semiconductor layer 112 are substantially aligned. For example, the above structure can be achieved by processing the insulating layer 110 using the oxide semiconductor layer 112 as a mask.

[0096] The oxide semiconductor layer 108 and oxide semiconductor layer 112 are formed using metal oxides such as In-M-Zn oxides (M being Al, Ga, Y, or Sn). In-Ga oxides and In-Zn oxides can also be used as the oxide semiconductor layer 108 and oxide semiconductor layer 112. In particular, when the oxide semiconductor layer 108 and oxide semiconductor layer 112 are formed using metal oxides formed from the same constituent elements, manufacturing costs can be reduced, and therefore this is preferred.

[0097] When the oxide semiconductor layer 108 and oxide semiconductor layer 112 are both In-M-Zn oxides, it is preferable that the atomic ratio of the metal elements in the sputtering target used to form the In-M-Zn oxide film satisfies In≥M and Zn≥M. Such atomic ratios of the metal elements in the sputtering target are preferably In:M:Zn = 1:1:1, In:M:Zn = 1:1:1.2, In:M:Zn = 2:1:1.5, In:M:Zn = 2:1:2.3, In:M:Zn = 2:1:3, In:M:Zn = 3:1:2, In:M:Zn = 4:2:4.1, In:M:Zn = 5:1:7, etc. Note that the atomic ratio of the formed oxide semiconductor layer 108 and oxide semiconductor layer 112 sometimes varies within a range of approximately ±40% of the atomic ratio of the metal elements contained in the sputtering target. For example, when a sputtering target with an atomic ratio of In:Ga:Zn = 4:2:4.1 is used as a sputtering target, the atomic ratio of the oxide semiconductor layer formed is sometimes around In:Ga:Zn = 4:2:3.

[0098] When an oxide semiconductor layer with low impurity concentration and low defect state density is used in the channel region 108i, the transistor can exhibit superior electrical characteristics. Here, the state of low impurity concentration and low defect state density (low amount of oxygen defects) is referred to as "high-purity intrinsic" or "substantially high-purity intrinsic." It can also be simply called intrinsic or substantially intrinsic. High-purity intrinsic or substantially high-purity intrinsic oxide semiconductors have fewer carrier generation sources, thus sometimes reducing carrier density. Therefore, transistors with channel regions formed in this oxide semiconductor layer tend to have positive threshold voltage electrical characteristics (also known as normally-off characteristics). Because high-purity intrinsic or substantially high-purity intrinsic oxide semiconductor layers have low defect state density, they sometimes have low trap state density. Furthermore, high-purity intrinsic or substantially high-purity intrinsic oxide semiconductor layers have significantly low off-state current. Therefore, transistors with channel regions formed in this oxide semiconductor layer sometimes exhibit small electrical characteristic variations and high reliability.

[0099] On the other hand, the source region 108s, the drain region 108d, and the oxide semiconductor layer 112 are in contact with the insulating layer 116. Hydrogen and / or nitrogen from the insulating layer 116 are added to the source region 108s, the drain region 108d, and the oxide semiconductor layer 112 in contact with the insulating layer 116 to increase the carrier density in the source region 108s, the drain region 108d, and the oxide semiconductor layer 112.

[0100] The carrier density of oxide semiconductors will be explained below.

[0101] Examples of factors that affect the carrier density of an oxide semiconductor layer include oxygen defects (Vo) or impurities in the oxide semiconductor layer.

[0102] As the amount of oxygen defects in an oxide semiconductor layer increases, the defect state density increases further when hydrogen bonds to these oxygen defects (this state is also called VoH). The defect state density also increases with the increase of impurities in the oxide semiconductor layer. Therefore, by controlling the defect state density in the oxide semiconductor layer, the carrier density of the oxide semiconductor layer can be adjusted.

[0103] A transistor using an oxide semiconductor layer in the channel region is described.

[0104] To suppress negative drift of the threshold voltage of a transistor or reduce its off-state current, it is preferable to reduce the carrier density of the oxide semiconductor layer. To reduce the carrier density of the oxide semiconductor layer, the impurity concentration in the oxide semiconductor layer can be reduced to decrease the defect state density. In this specification, a state with low impurity concentration and low defect state density is referred to as "high-purity intrinsic" or "substantially high-purity intrinsic." The carrier density of a high-purity intrinsic oxide semiconductor layer is less than 8 × 10⁻⁶. 15 cm-3 Preferably less than 1×10 11 cm -3 More preferably, less than 1×10 10 cm -3 And it is 1×10 -9 cm -3 above.

[0105] On the other hand, to increase the on-state current or improve the field-effect mobility of the transistor, it is preferable to increase the carrier density of the oxide semiconductor layer. To increase the carrier density of the oxide semiconductor layer, it is preferable to slightly increase the impurity concentration or defect state density in the oxide semiconductor layer, or to narrow the band gap of the oxide semiconductor layer. For example, an oxide semiconductor layer with a slightly higher impurity concentration or defect state density can be considered substantially intrinsic within the range of the on / off ratio that yields the Id-Vg characteristic of the transistor. Furthermore, an oxide semiconductor layer with increased thermally excited electron (carrier) density due to its high electron affinity and small band gap can be considered substantially intrinsic. Additionally, transistors using oxide semiconductor layers with high electron affinity have lower threshold voltages.

[0106] The aforementioned oxide semiconductor layer with increased carrier density exhibits some n-type conductivity. Therefore, it can also be referred to as a "slightly-n" oxide semiconductor layer.

[0107] The carrier density of the intrinsic oxide semiconductor layer is preferably 1 × 10⁻⁶. 5 cm -3 Above and below 1×10 18 cm -3 Further preferred is 1×10 7 cm -3 Above and 1×10 17 cm -3 Hereinafter, 1×10 is further preferred. 9 cm -3 Above and 5×10 16 cm -3 Hereinafter, 1×10 is further preferred. 10 cm -3 Above and 1×10 16 cm -3 Hereinafter, 1×10 is further preferred. 11 cm -3 Above and 1×10 15 cm -3 the following.

[0108] Furthermore, by using the aforementioned substantially intrinsic oxide semiconductor layer, the reliability of transistors can sometimes be improved. Here, refer to... Figure 23This explains why transistors containing an oxide semiconductor layer in the channel region have high reliability. Figure 23 This is a diagram of the energy band structure of a transistor that contains an oxide semiconductor layer in the channel region.

[0109] exist Figure 23 In this context, GE represents the gate electrode, GI represents the gate insulating film, OS represents the oxide semiconductor layer, and SD represents the source or drain electrode. That is to say, Figure 23 It is an example of the energy band of the gate electrode, gate insulating film, oxide semiconductor layer, source electrode or drain electrode in contact with oxide semiconductor layer.

[0110] exist Figure 23 In this design, silicon oxide is used as the gate insulating film, and In-Ga-Zn oxide is used as the oxide semiconductor layer. The migration energy level (εf) of defects that may form in the silicon oxide film is located approximately 3.1 eV below the conduction band of the gate insulating film. Furthermore, at a gate voltage (Vg) of 30 V, the Fermi level (Ef) of the silicon oxide film at the interface between the oxide semiconductor layer and the silicon oxide film is located approximately 3.6 eV below the conduction band of the gate insulating film. The variation of the Fermi level Ef of the silicon oxide film depends on the gate voltage. For example, the higher the gate voltage, the lower the Fermi level Ef of the silicon oxide film at the interface between the oxide semiconductor layer and the silicon oxide film. Figure 23 In the diagram, white circles represent electrons (charge carriers), and X represents the defect energy level in the silicon oxide film.

[0111] like Figure 23 As shown, for example, when charge carriers are thermally excited under the applied gate voltage, they are trapped in the defect energy level (X in the figure), and the charge state of the defect energy level changes from positive ("+") to neutral ("0"). That is, when the value of the Fermi level Ef of the silicon oxide film plus the value of the thermally excited energy level is higher than the migration energy level εf of the defect, the charge state of the defect energy level in the silicon oxide film changes from positive to neutral, and the threshold voltage of the transistor changes in the positive direction.

[0112] When using oxide semiconductor layers with different electron affinities, the Fermi level at the interface between the gate insulating film and the oxide semiconductor layer is sometimes altered. When using an oxide semiconductor layer with a higher electron affinity, the conduction band bottom of the gate insulating film is relatively increased at or near the interface between the gate insulating film and the oxide semiconductor layer. In this case, defect levels may form in the gate insulating film. Figure 23The Fermi level (X) in the silicon oxide film is also located at a relatively high position, thus increasing the energy difference between the Fermi level of the gate insulating film and the Fermi level of the oxide semiconductor film. This results in less charge being trapped in the gate insulating film. For example, it is possible that the charge state changes of the defect levels formed in the aforementioned silicon oxide film are less, thereby potentially reducing the threshold voltage variation of the transistor caused by gate bias temperature (GBT) stress.

[0113] The above is an explanation of the carrier density of the oxide semiconductor layer.

[0114] like Figure 2C As shown, the oxide semiconductor layer 108i faces the conductive layer 106, which is used as the first gate electrode, and the oxide semiconductor layer 112, which is used as the second gate electrode. The oxide semiconductor layer 108i is located between the conductive layer used as the gate electrode and the oxide semiconductor layer.

[0115] By adopting the above structure, the electric field generated by the scan signal in the conductive layer 106 used as the first gate electrode and the electric field generated by the constant voltage in the oxide semiconductor layer 112 used as the second gate electrode can electrically surround the oxide semiconductor layer 108 contained in the transistor 100.

[0116] like Figure 1A As shown, in transistor 100, a scan signal controlling the conduction state of transistor 100 is supplied from the first gate electrode, and a constant voltage is supplied from the second gate electrode. Therefore, the wiring V0 is supplied with a constant voltage, so the gate capacitance between wiring V0 and transistors M1 and M2 is not a problem. Compared with the case where the first and second gate electrodes are connected to each other, the gate capacitance between scan line GL and transistors can be reduced.

[0117] Furthermore, the conduction state of transistor 100 is controlled by a scan line disposed in the same layer as the first gate electrode. The first gate electrode is formed using a metallic material. This metallic material has a lower resistance value than the metal oxide material such as the oxide semiconductor layer 112 used as the second gate electrode. Therefore, the resistance of the scan line formed using the same material as the conductive layer 106 can be reduced.

[0118] Furthermore, the transistor 100 includes an oxide semiconductor layer 112, which serves as the second gate electrode, and acts as a gate electrode that releases oxygen upon heating, similar to an oxide layer. Therefore, the transistor 100 can have high reliability. Since the resistance of the conductive layer 106 of the first gate electrode and the scan lines located in the same layer as the conductive layer 106 can be reduced as described above, the disadvantage of the high resistance of the second gate electrode can be offset. Moreover, compared to a structure that stacks oxide semiconductor layers with metal wiring to reduce the resistance of the oxide semiconductor layer used as the second gate electrode, the number of processes can be reduced, thereby reducing manufacturing costs.

[0119] Furthermore, there is no opening in transistor 100 for connecting the first gate electrode and the second gate electrode. This avoids the need to configure openings in very small areas, such as pixel areas. Therefore, transistor 100 is suitable for high-resolution display devices.

[0120] [Example of a top-view structure]

[0121] then, Figure 3 Showing what can be used Figure 1A An example of a circuit structure excluding the structure of light-emitting elements, etc., shown in a top view. Figure 4 The description is shown separately for each layer. Figure 3 The top view shows conductive and semiconductor layers positioned above and below each other, illustrating the interconnected state of these components through openings. Figure 5A It is along Figure 3 A cross-sectional view of the area between the dotted and dashed lines P1 and P2. Figure 5B It is along Figure 3 The cross-sectional view between the dotted and dashed lines Q1 and Q2. Figure 6A and Figure 6B It is shown side by side Figure 3 A top view of the structure, including light-emitting elements, etc.

[0122] exist Figure 3 The top view shows the scan line GL, signal line SL, wiring V0, current supply line ANODE, transistor M1, transistor M2, transistor M3, and capacitor C1. In the layer structure of the conductive layer and oxide semiconductor layer, insulating layers are omitted.

[0123] according to Figure 4 and Figure 5A and Figure 5B Understandable Figure 3The structure comprises conductive layers and oxide semiconductor layers forming wiring, etc. Conductive layers 151 and 152, serving as first gate electrodes, are provided on a substrate SUB. Next, oxide semiconductor layers 161, 162, and 163 are provided across an insulating layer 153, serving as a first gate insulating layer. Next, oxide semiconductor layers 171, 172, and 173, serving as second gate electrodes, are provided across an insulating layer 164, serving as a second gate insulating layer. Next, conductive layers 181, 182, 183, 184, and 185, serving as source and drain electrodes of a transistor and wiring, are provided across an insulating layer 174. The insulating layer 174 selectively increases the carrier density in oxide semiconductor layers 161, 162, and 163, as well as oxide semiconductor layers 171, 172, and 173, to improve the conductivity of the oxide semiconductor layers. Next, conductive layers 191 and 192 are provided on conductive layers 181, 182, 183, 184, and 185, separated by insulating layers 186 and 187 which serve as interlayer insulating layers. An insulating layer 193, serving as an interlayer insulating layer, is provided on conductive layers 191 and 192. Furthermore, openings 190 extending to conductive layer 183 are provided in insulating layers 186, 187, and 193. These openings 190 facilitate the connection between a pixel electrode formed subsequently and a light-emitting element disposed on that pixel electrode.

[0124] In addition, Figure 3 and Figure 4 In the diagram, the cross on the square represents an opening formed in the insulating layer. Through this opening, as... Figure 4 As shown by the arrows, the conductive layers and oxide semiconductor layers in each layer are interconnected. Figure 4 The diagram shows a conductive layer 151 used as a scan line GL, a conductive layer 191 used as a signal line SL, a conductive layer 181 used as a wiring V0, and a conductive layer 192 used as a current supply line ANODE.

[0125] according to Figure 3 , Figure 4 and Figure 5A and Figure 5B It is known that the first and second gate electrodes in transistors M1 and M2 are not connected to each other. Due to this structure, contrary to the case where the first and second gate electrodes are connected, the gate capacitance between the scan line GL and transistors M1 and M2 is formed only between the scan line GL and the first gate electrode. Therefore, compared to the case where the first and second gate electrodes are connected, the above structure can reduce the gate capacitance between the scan line GL and the transistor.

[0126] In addition, according to Figure 3 , Figure 4 and Figure 5A and Figure 5B It is known that in transistors M1 and M2, scan lines GL made of metallic material can be arranged in the same layer as the first gate electrode. Therefore, even if the first gate electrode is formed using a conductive layer containing metallic material and the second gate electrode is formed using a conductive layer containing a metal oxide material such as an oxide semiconductor, problems such as increased resistance of scan lines GL can be avoided. Furthermore, the unnecessary wiring made of metallic material required to reduce the resistance of scan lines GL can be reduced, thereby lowering manufacturing costs.

[0127] In addition, according to Figure 3 , Figure 4 and Figure 5A and Figure 5B It can be seen that the two electrodes forming the capacitor element C1 can be composed of a conductive layer 152 and an oxide semiconductor layer 163. By reducing the thickness of the insulating layer 153 between the two electrodes, the capacitance of the capacitor element can be increased.

[0128] in addition, Figure 6A It is a top view of 2×3 subpixels used as three colors (e.g., red (R), green (G), blue (B)), each corresponding to Figure 3 , Figure 4 and Figure 5A and Figure 5B The pixels shown. Figure 6A The subpixels (R1, R2, G1, G2, B1, and B2) are arranged in a configuration of two rows in the m-th row and two rows in the (m+1)-th row, and three columns in the n-th column, the (n+1)-th column, and the (n+2)-th column. Figure 6A Also shown are the light-emitting layer 198 and the partition layer 199 contained in the light-emitting element EL. Figures 3 to 5A and Figure 5B The opening shown is 190. Figure 6A It also shows the scan line GL_m in row m, the scan line GL_m+1 in row m+1, the signal line SL_n in column n, the signal line SL_n+1 in column n+1, the signal line SL_n+2 in column n+2, the wiring V0, and the current supply line ANODE.

[0129] Figure 6B yes Figure 6A A schematic diagram of the top view in [the image / image]. Figure 6B In the middle, region 22 is provided with a light-emitting layer 198 and a partition layer 199, etc., and region 24 is provided with a circuit including transistors M1 to M3, etc. For example Figure 6AAs shown, the opening 190 is positioned near the center of region 24. Region 24 is configured not to align with region 22, thus allowing the opening 190 to be located at the end of region 22. This structure allows the light-emitting area to be configured regardless of the position of the opening 190.

[0130] [Example of variation]

[0131] The circuit structure that can be used in one aspect of the present invention is not limited to Figure 1A The pixel structure shown includes transistors M1 to M3. For example, as... Figure 7A As shown, one aspect of the present invention can also be used for pixel structures comprising two or fewer transistors.

[0132] Figure 7A The pixel structure shown includes transistor M4, transistor M5, capacitor C2, and light-emitting element EL. In other words, this pixel structure is equivalent to omitting transistor M2. Figure 1A The circuit structure in it.

[0133] Still Figure 7A In the structure shown, the first and second gate electrodes of transistor M4 are not connected. Due to this structure, unlike the case where the first and second gate electrodes are connected, the gate capacitance between the scan line GL and the transistor is formed only between the scan line GL and the first gate electrode. Since the wiring V0 is supplied with a constant voltage, the gate capacitance between the wiring V0 and transistor M4 is not a problem. Therefore, compared to the case where the first and second gate electrodes are connected, the above structure can reduce the gate capacitance between the scan line GL and the transistor. Furthermore, by controlling the constant voltage supplied to the wiring V0, the threshold voltage of transistor M4 can be adjusted.

[0134] Furthermore, in the above structure, the scan line GL, made of a metallic material, can be disposed in the same layer as the first gate electrode in transistor M4. Therefore, even if the first gate electrode is formed using a conductive layer containing a metallic material and the second gate electrode is formed using a conductive layer containing a metal oxide material such as an oxide semiconductor, problems such as increased resistance of the scan line GL can be avoided. In addition, the manufacturing cost of the redundant wiring made of metallic material used to reduce the resistance of the scan line GL can be reduced.

[0135] In the above structure, a conductive layer containing a metallic material can be used to form the first gate electrode, and a conductive layer containing a metal oxide material such as an oxide semiconductor can be used to form the second gate electrode. This allows for the use of a gate electrode that releases oxygen upon heating as the second gate electrode, thereby improving the reliability of the transistor. Furthermore, since the first and second gate electrodes are not connected in transistor M4, high-resolution display devices can be manufactured even in very small areas, such as pixel areas, where the gate electrodes are not connected.

[0136] The circuit structure that can be used in one aspect of the present invention is not limited to Figure 1A and Figure 7A The pixel structure shown. For example, as Figure 7B As shown, one aspect of the present invention can also be used for pixel structures comprising three or more transistors.

[0137] Figure 7B The pixel structure shown includes transistors M6, M7, M8, M9, M10, and M11, capacitors C3, C4, and C5, and a light-emitting element EL. A pixel with this structure operates via signal line SL, current supply line ANODE, wiring V0, common wiring CATHODE, scan lines GL1 to GL4, and wirings V1 and V2. Wirings V1 and V2 are supplied with a constant voltage.

[0138] Still Figure 7B In the structure shown, the first and second gate electrodes of transistors M6 to M10 are not connected to each other. Due to this structure, unlike the case where the first and second gate electrodes are connected, the gate capacitance between scan lines GL1 to GL4 and the transistors is formed only between scan lines GL1 to GL4 and the first gate electrode. Since wiring V0 is supplied with a constant voltage, the gate capacitance between wiring V0 and transistors M6 to M10 is not a problem. Therefore, compared to the case where the first and second gate electrodes are connected, the above structure can reduce the gate capacitance between scan lines GL1 to GL4 and the transistors. By controlling the constant voltage supplied to wiring V0, the threshold voltage of transistors M6 to M10 can be adjusted.

[0139] Furthermore, in the above structure, scan lines GL1 to GL4 made of a metallic material can be arranged in the same layer as the first gate electrode in transistors M6 to M10. Therefore, even if the first gate electrode is formed using a conductive layer containing a metallic material and the second gate electrode is formed using a conductive layer containing a metal oxide material such as an oxide semiconductor, problems such as increased resistance of scan lines GL1 to GL4 can be avoided. In addition, the manufacturing cost of the redundant wiring using metallic materials that is set up to reduce the resistance of scan lines GL1 to GL4 can be reduced.

[0140] In the above structure, a conductive layer containing a metallic material can be used to form the first gate electrode, and a conductive layer containing a metal oxide material such as an oxide semiconductor can be used to form the second gate electrode. This allows for the use of a gate electrode that releases oxygen upon heating as the second gate electrode, thereby improving the reliability of the transistor. Furthermore, since the first and second gate electrodes are not connected in transistors M6 to M10, they are not connected in very small areas, such as pixel areas, enabling the manufacture of high-resolution display devices.

[0141] Although Figure 1A The first and second gate electrodes of transistor M3 are not connected to each other, but one aspect of the invention is not limited to this structure. For example, as Figure 8A As shown, the second gate electrode of transistor M3 can be connected to wiring V0.

[0142] Or, such as Figure 8B As shown, for example, the first gate electrode of transistor M3 can be omitted. Or, as... Figure 8C As shown, for example, the first gate electrode of transistor M3 can be connected to one of the source and drain electrodes of transistor M3.

[0143] Still Figures 8A to 8C In the structure shown, the first and second gate electrodes of transistors M1 and M2 are not connected to each other. Due to this structure, unlike the case where the first and second gate electrodes are connected, the gate capacitance between the scan line GL and the transistor is formed only between the scan line GL and the first gate electrode. Since the wiring V0 is supplied with a constant voltage, the gate capacitance between the wiring V0 and transistors M1 and M2 is not a problem. Therefore, compared to the case where the first and second gate electrodes are connected, the above structure can reduce the gate capacitance between the scan line GL and the transistor. By controlling the constant voltage supplied to the wiring V0, the threshold voltages of transistors M1 and M2 can be adjusted.

[0144] Furthermore, in the above structure, in transistors M1 and M2, scan lines GL made of a metallic material can be arranged in the same layer as the first gate electrode. Therefore, even if the first gate electrode is formed using a conductive layer containing a metallic material and the second gate electrode is formed using a conductive layer containing a metal oxide material such as an oxide semiconductor, problems such as increased resistance of the scan lines GL can be avoided. In addition, the manufacturing cost of the redundant wiring using metallic materials that is set up to reduce the resistance of the scan lines GL can be reduced.

[0145] In the above structure, a conductive layer containing a metallic material can be used to form the first gate electrode, and a conductive layer containing a metal oxide material such as an oxide semiconductor can be used to form the second gate electrode. This allows for the use of a gate electrode that releases oxygen upon heating as the second gate electrode, thereby improving the reliability of the transistor. Furthermore, since the first and second gate electrodes are not connected in transistors M1 and M2, they are not connected in very small areas, such as pixel areas, enabling the manufacture of high-resolution display devices.

[0146] Although Figure 1A The second gate electrodes of both transistors M1 and M2 are connected to wiring V0, but one embodiment of the invention is not limited to this structure. For example, as... Figure 24A As shown, the second gate electrode of transistor M1 can be connected to wiring V0, and the second gate electrode of transistor M2 can be connected to scan line GL. By adopting this structure, the current supply capability of transistor M2 can be improved.

[0147] Or, such as Figure 24B As shown, the second gate electrode of transistor M2 can be connected to wiring V0, and the second gate electrode of transistor M1 can be connected to scan line GL. By adopting this structure, the current supply capability of transistor M1 can be improved.

[0148] Additionally, it can be used with Figure 1A In this context, multiple scan lines GL1 and GL2 are configured instead of the actual scan lines GL. For example, as shown in the example... Figure 25A As shown, the first gate electrode of transistor M1 can be connected to scan line GL1 and the first gate electrode of transistor M2 can be connected to scan line GL2.

[0149] Additionally, it can be used with Figure 1A In this context, routing V0 is used to configure multiple routings V0_1 and V0_2. For example, as... Figure 25B As shown, the second gate electrode of transistor M1 can be connected to wiring V0_1 and the second gate electrode of transistor M2 can be connected to wiring V0_1.

[0150] At least a portion of this embodiment can be implemented in combination with other embodiments described in this specification.

[0151] Implementation Method 2

[0152] In this embodiment, an example of the cross-sectional structure of a display device according to one aspect of the present invention will be described.

[0153] [Structure Example of a Display Device]

[0154] Figure 9This is a top view of the display device 10 described below. The display device 10 includes a pixel unit 11, a scan line driving circuit 12, a signal line driving circuit 13, a terminal unit 15, a plurality of wirings 16a and a plurality of wirings 16b, etc.

[0155] [Example 1 of cross-sectional structure]

[0156] Figure 10 This is a cross-sectional schematic diagram of the display device 10. Figure 10 For example, equivalent to along Figure 9 The cross section of line A1-A2.

[0157] The display device 10 includes a first substrate 201 and a second substrate 202 bonded together by an adhesive layer 220.

[0158] A terminal portion 15, wiring 16b, a transistor 255 included in the signal line driving circuit 13, a transistor 251 and a transistor 252 included in the pixel portion 11, a capacitor element 253, and a light-emitting element 254 are provided on the first substrate 201. In addition, insulating layers 211, 212, 213, and 214, as well as spacers 215, are provided on the first substrate 201.

[0159] An insulating layer 221, a light-shielding layer 231, a coloring layer 232, a structure 230a, and a structure 230b are provided on one side of the first substrate 201 of the second substrate 202.

[0160] A light-emitting element 254 is disposed on the insulating layer 213. The light-emitting element 254 includes a pixel electrode 225 serving as a first electrode, an EL layer 222, and a second electrode 223. In addition, an optical adjustment layer 224 is disposed between the pixel electrode 225 and the EL layer 222. The insulating layer 214 covers the ends of the pixel electrode 225 and the optical adjustment layer 224.

[0161] Transistor 251 is used in Embodiment 1 described above. Figure 1A The transistors M1 or M2 described herein. Transistor 252 is used in Embodiment 1 described above. Figure 1A The transistor M3 is described.

[0162] Transistors 251, 252, and 255 are provided with a conductive layer 275 serving as a first gate electrode and a conductive layer 272 serving as a second gate electrode. That is, the semiconductor forming the channel is sandwiched between the two gate electrodes. The conductive layer 275 corresponds to the reference in Embodiment 1 described above. Figures 2A to 2C The conductive layer 106 serves as the first gate electrode. The conductive layer 272 corresponds to the reference in Embodiment 1 described above. Figures 2A to 2C The oxide semiconductor layer 112 serves as the second gate electrode.

[0163] When the conductive layer 275 is used as an electrode that can fill oxygen defects in the semiconductor layer 271 by releasing oxygen, the electrical characteristics of the transistor can be stabilized.

[0164] Furthermore, in transistors such as transistor 252 that are connected to a light-emitting element, it is preferable to electrically connect the two gate electrodes to each other so as to supply the same signal. Compared to other transistors, such transistors can have higher field-effect mobility and larger on-state current. As a result, circuits capable of high-speed operation can be obtained.

[0165] Although Figure 10 As shown, the capacitor element 253 is composed of a portion of the conductive layer 274, a portion of the insulating layer 217, and a portion of the conductive layer 273. However, the capacitor element 253 may also be composed of a portion of the conductive layer 275, a portion of the insulating layer 211, and a portion of the semiconductor layer 271.

[0166] Figure 10 The example shown is a top-emitting light-emitting element 254. Light from the light-emitting element 254 is emitted from the second substrate 202 side. By adopting this structure, transistors, capacitors, circuits, wiring, etc., can be arranged on the underside of the light-emitting element 254 (on the side of the first substrate 201), thereby increasing the aperture ratio of the pixel section 11.

[0167] A coloring layer 232, overlapping the light-emitting element 254, is provided on the surface of the second substrate 202 on one side of the first substrate 201. Alternatively, a light-shielding layer 231 may be provided in the portion where the coloring layer 232 is not provided. Figure 10 As shown, the light-shielding layer 231 can also overlap with the signal line driving circuit 13. Alternatively, a light-transmitting protective layer can be provided to cover the coloring layer 232 and the light-shielding layer 231.

[0168] On the first substrate 201 side of the second substrate 202, structure 230a is located inside the adhesive layer 220, and structure 230b is located outside the adhesive layer 220. Both structure 230a and structure 230b function to suppress the development of cracks in the insulating layer 221 or the second substrate 202 at the ends of the second substrate 202. Figure 10The diagram shows a stacked structure comprising structures 230a and 230b, each consisting of a layer made of the same film as the light-shielding layer 231 and a layer made of the same film as the coloring layer 232. By having two or more such stacked structures, the effect of suppressing crack development can be improved. Although structures 230a and 230b are disposed on both sides of the adhesive layer 220, they can also be disposed on one side. When cracks will not occur (e.g., due to high rigidity of the second substrate 202, etc.), structures 230a and 230b can be omitted.

[0169] Spacers 215 are disposed on insulating layer 214. Spacers 215 function as gap spacers to prevent the distance between the first substrate 201 and the second substrate 202 from being too short. Furthermore, the angle between a portion of the side surface of spacer 215 and the surface on which spacer 215 is formed is preferably 45 degrees or more and 120 degrees or less, more preferably 60 degrees or more and 100 degrees or less, and even more preferably 75 degrees or more and 90 degrees or less. By employing this structure, a thin region of EL layer 222 can be easily formed on the side surface of spacer 215. Therefore, the phenomenon of light emission due to current flowing through EL layer 222 between adjacent light-emitting elements can be suppressed. In particular, when pixel portion 11 has high resolution, it is effective to provide spacers 215 with this shape between light-emitting elements because it reduces the distance between adjacent light-emitting elements. Furthermore, this is particularly effective when EL layer 222 includes a layer containing a highly conductive material.

[0170] When using a masking mask to form the EL layer 222 or the second electrode 223, the spacer 215 can also prevent the masking mask from damaging the surface to be formed.

[0171] The spacer 215 preferably overlaps with the wiring that intersects the scan line.

[0172] Figure 10 A display device 10 employing a color filter approach is shown. For example, a color structure can be presented using sub-pixels of any of the color layers 232, namely red (R), green (G), and blue (B). Furthermore, since color reproducibility can be improved and power consumption can be reduced, it is preferable to use white (W) or yellow (Y) sub-pixels.

[0173] In the light-emitting element 254, by combining the color layer 232 with the microcavity structure utilizing the optical adjustment layer 224, light with high color purity can be extracted from the display device 10. The thickness of the optical adjustment layer 224 is determined according to the color of each sub-pixel. Alternatively, the optical adjustment layer may be omitted in some sub-pixels.

[0174] Furthermore, the EL layer 222, which serves as the light-emitting element 254, is preferably an EL layer that emits white light. By employing this type of light-emitting element 254, it is not necessary to provide an EL layer 222 for each sub-pixel, thereby reducing costs and increasing productivity. Additionally, it is easier to achieve higher resolution for the pixel section 11. Furthermore, sub-pixels may include optical adjustment layers of different thicknesses, and the EL layer 222 in each sub-pixel may be individually colored; in this case, one or both of the optical adjustment layer and the coloring layer can be omitted. In this situation, apart from the light-emitting layer EL layer 222, the layers in each sub-pixel do not need to be individually colored.

[0175] exist Figure 10 In the example shown, FPC242 is electrically connected to terminal 15. Therefore, it is also possible to... Figure 10 The display device 10 shown is called a display module. A display device without an FPC or similar component can also be called a display panel.

[0176] Terminal 15 is electrically connected to FPC242 via connection layer 243.

[0177] Figure 10 The terminal portion 15 is shown to have a stacked structure including wiring 16b and a conductive layer composed of the same conductive film as the pixel electrode 225. The terminal portion 15 preferably has a stacked structure including multiple conductive layers, which can reduce resistance and improve mechanical strength.

[0178] The insulating layers 211 and 221 are preferably made of materials from which impurities such as water or hydrogen do not easily diffuse. That is, the insulating layers 211 and 221 can be used as barrier films. By employing this structure, even if a moisture-permeable material is used as the first substrate 201 or the second substrate 202, the diffusion of impurities from the outside into the light-emitting element 254 or transistors can be effectively suppressed, thereby enabling a highly reliable display device.

[0179] Figure 10 The example shown has a hollow sealing structure with a space 250 provided between the first substrate 201 and the second substrate 202. For example, the space 250 may also be filled with an inert gas such as nitrogen or a rare gas. Alternatively, the space 250 may be filled with a flowing material such as oil, or the space 250 may be depressurized. Furthermore, the sealing method is not limited to these; solid sealing can also be performed using resin or the like.

[0180] [Example 2 of cross-sectional structure]

[0181] Figure 11 An example of the structure of a display device is shown that is suitable for use in situations where the pixel section 11 and the signal line drive circuit 13 are bent.

[0182] Figure 11The display device 10 shown has a solid sealing structure in which a first substrate 201 and a second substrate 202 are bonded together using a sealant 260.

[0183] An adhesive layer 261 is disposed on the first substrate 201. An insulating layer 216 is disposed on the adhesive layer 261. Transistors and light-emitting elements are disposed on the insulating layer 216. Similar to the insulating layer 221, the insulating layer 216 can be made of a material from which impurities such as water or hydrogen do not easily diffuse.

[0184] An adhesive layer 262 is provided between the second substrate 202 and the insulating layer 221.

[0185] like Figure 11 As shown, the insulating layer 213 has an opening located further outward than the pixel portion 11 and the signal line driving circuit 13. For example, when the insulating layer 213 is made of a resin material, it is preferable to provide an opening surrounding the pixel portion 11 and the signal line driving circuit 13, etc. In this structure, the side of the insulating layer 213 that contacts the outside of the display device 10 and the portion that overlaps with the pixel portion 11 and the signal line driving circuit 13, etc., do not form a continuous layer, thereby suppressing the diffusion of impurities such as water or hydrogen from the outside through the insulating layer 213.

[0186] Figure 11 The solid sealing structure shown facilitates maintaining a certain distance between the first substrate 201 and the second substrate 202. Therefore, flexible substrates can preferably be used for the first substrate 201 and the second substrate 202. Consequently, part or all of the pixel portion 11, the scan line driving circuit 12, and the signal line driving circuit 13 can be bent for use. For example, by attaching the display device 10 to a curved surface or folding the pixel portion of the display device 10, various types of electronic devices can be realized.

[0187] [Example of variation]

[0188] The following is an example of a touch panel that includes a touch sensor.

[0189] Figure 12 Showing the Figure 10 The structure shown is an example of a touch panel that uses an on-cell touch sensor.

[0190] On the second substrate 202, conductive layers 291 and 292 are covered by an insulating layer 294. A conductive layer 293 is disposed on the insulating layer 294. The conductive layer 293 is electrically connected to two conductive layers 292 that are sandwiched between conductive layers 291 through an opening in the insulating layer 294. The insulating layer 294 is attached to the substrate 296 by using an adhesive layer 295.

[0191] The capacitance formed between conductive layers 291 and 292 changes according to the proximity of the object being detected, thereby enabling the detection of proximity or contact with the object. By arranging the multiple conductive layers 291 and 292 in a lattice pattern, position data can be obtained.

[0192] Terminal portion 299 is disposed near the outer end of the second substrate 202. Terminal portion 299 is electrically connected to FPC 297 via connection layer 298.

[0193] The substrate 296 can also be used as a substrate that is in direct contact with the object being detected, such as a finger or a stylus. In this case, it is preferable to provide a protective layer (such as a ceramic coating) on ​​the substrate 296. As a protective layer, inorganic insulating materials such as silicon oxide, aluminum oxide, yttrium oxide, and yttrium-stabilized zirconium oxide (YSZ) can be used, for example. Alternatively, tempered glass can be used as the substrate 296. As tempered glass, it can be tempered glass whose surface is subjected to compressive stress through physical or chemical treatments such as ion exchange or air-cooling strengthening. By providing touch sensors on one side and the opposite side of the tempered glass, for example, by providing them on the outermost surface of the electronic device as a touch surface, the overall thickness of the device can be reduced.

[0194] Capacitive touch sensors can be used as touch sensors. Examples of capacitive touch sensors include surface-type capacitive touch sensors and projected capacitive touch sensors. Projected capacitive touch sensors include self-capacitive touch sensors and mutual-capacitive touch sensors. Mutual-capacitive touch sensors are preferred because they allow for simultaneous multi-point detection. An example of using a projected capacitive touch sensor will be described below.

[0195] In addition, not limited to this example, various sensors capable of detecting the proximity or contact of the detected object, such as a finger or stylus, can also be used.

[0196] The example above shows an on-cell touch panel with wiring constituting a touch sensor formed on the outer surface of the second substrate 202, but it is not limited to this structure. For example, out-cell or in-cell touch panels can also be used. When using on-cell or in-cell touch panels, the thickness of the display panel can be reduced even if the display panel has the function of a touch panel.

[0197] The above is an explanation of examples of cross-sectional structures.

[0198] [Components]

[0199] The following explains each of the above-mentioned components.

[0200] [Substrate]

[0201] The substrate included in the display device can be made of a material with a flat surface. As the substrate for extracting light from the light-emitting element, a material that allows the light to pass through is used. For example, materials such as glass, quartz, ceramic, sapphire, and organic resins can be used.

[0202] By using a thin substrate, the weight and thickness of the display device can be reduced. Furthermore, by using a substrate whose thickness allows for flexibility, a flexible display device can be obtained.

[0203] As glass, for example, alkali-free glass, barium borosilicate glass, aluminum borosilicate glass, etc. can be used.

[0204] Materials that are flexible and transparent to visible light include, for example, glass whose thickness allows for flexibility, polyester resins such as polyethylene terephthalate (PET) or polyethylene naphthalate (PEN), polyacrylonitrile resin, polyimide resin, polymethyl methacrylate resin, polycarbonate (PC) resin, polyethersulfone (PES) resin, polyamide resin, cycloolefin resin, polystyrene resin, polyamide-imide resin, polyvinyl chloride resin, or polytetrafluoroethylene (PTFE) resin. Materials with low coefficients of thermal expansion are particularly suitable, such as polyamide-imide resin, polyimide resin, and PET. Additionally, substrates in which organic resins are impregnated into glass fibers or substrates whose coefficients of thermal expansion are reduced by mixing inorganic fillers and organic resins can also be used. Because of the use of substrates made of such materials, display devices using such substrates can also achieve lightweight design.

[0205] Since the substrate does not extract light, it does not necessarily need to be transparent. Therefore, in addition to the substrates mentioned above, metal substrates can also be used. Because metal substrates have high thermal conductivity, they can easily conduct heat to the entire sealing substrate, thus suppressing the local temperature rise of the display device, making them a preferred choice.

[0206] Although there are no particular restrictions on the material of the metal substrate, it is preferred to use metals such as aluminum, copper, and nickel, or alloys such as aluminum alloys or stainless steel.

[0207] Alternatively, substrates that have undergone insulating treatment, such as surface oxidation of the metal substrate or formation of an insulating film on its surface, can be used. For example, the insulating film can be formed using methods such as spin coating or dip coating, electrodeposition, vapor deposition, or sputtering. An oxide film can be formed on the surface of the substrate by placing it in an oxygen atmosphere or heating it, or by using methods such as anodic oxidation.

[0208] Hard coatings (e.g., silicon nitride layers) that protect the surface of the display device from damage, and layers of materials capable of dispersing pressure (e.g., aramid resin layers) can also be laminated on the flexible substrate. Furthermore, to suppress moisture and other factors that reduce the lifespan of the light-emitting elements, a low-water-permeability insulating film can be laminated on the flexible substrate. For example, inorganic insulating materials such as silicon nitride, silicon oxynitride, aluminum oxide, and aluminum nitride can be used.

[0209] Substrates with multiple layers can also be used as substrates. In particular, when a glass layer is used, the barrier properties against water and oxygen can be improved, resulting in a highly reliable display device. For example, a substrate in which a glass layer, an adhesive layer, and an organic resin layer are stacked from the side closest to the light-emitting element can be used. By incorporating this organic resin layer, the mechanical strength can be improved by suppressing the breakage or cracking of the glass layer. By applying this composite material of glass and organic resin to the substrate, a highly reliable flexible display device can be manufactured.

[0210] [transistor]

[0211] The transistors included in the display device include: a conductive layer serving as a front gate electrode; a conductive layer serving as a back gate electrode; a semiconductor layer; a conductive layer serving as a source electrode; a conductive layer serving as a drain electrode; and an insulating layer serving as a gate insulating layer.

[0212] In other words, in a display device according to one aspect of the present invention, gate electrodes are disposed above and below the channel of the transistor.

[0213] There are no particular restrictions on the crystallinity of the semiconductor material used in transistors; amorphous semiconductors or crystalline semiconductors (microcrystalline semiconductors, polycrystalline semiconductors, single-crystal semiconductors, or semiconductors with crystalline regions in some of their components) can be used. Crystalline semiconductors are preferred because they can suppress transistor performance degradation.

[0214] Furthermore, oxide semiconductors can be used as semiconductor materials for transistors, for example. Oxide semiconductors with a wider bandgap than silicon are particularly preferred. It is preferable to use semiconductor materials with a wider bandgap and lower carrier density than silicon, thus reducing the off-state current of the transistor.

[0215] For example, the oxide semiconductor described above preferably contains at least indium (In) or zinc (Zn). More preferably, the oxide semiconductor contains an oxide represented by an In-M-Zn type oxide (where M is a metal such as Al, Ti, Ga, Ge, Y, Zr, Sn, La, Ce, or Hf).

[0216] As a semiconductor layer, an oxide semiconductor layer is preferably used that has a plurality of crystal portions, the c-axis of which is oriented in a direction substantially perpendicular to the surface on which the semiconductor layer is formed or the top surface of the semiconductor layer, and no grain boundaries are observed between adjacent crystal portions.

[0217] Because this type of oxide semiconductor lacks grain boundaries, it can suppress the formation of cracks in the oxide semiconductor layer caused by stress when the display panel is bent. Therefore, this type of oxide semiconductor can be used in flexible display devices that are bent for use.

[0218] Furthermore, by using this crystalline oxide semiconductor as a semiconductor layer, a transistor with suppressed electrical characteristic variations and high reliability can be realized.

[0219] Furthermore, transistors using oxide semiconductors, whose bandgap is wider than that of silicon, can retain the charge stored in the capacitor element connected in series with the transistor for extended periods due to their low off-state current. By using such transistors in pixels, it is possible to stop the driving circuitry while maintaining the grayscale of each pixel. As a result, display devices with extremely low power consumption can be realized.

[0220] [Conductive layer]

[0221] Materials used as gates, sources, and drains of transistors, and as conductive layers for wiring and electrodes included in display devices, include metals such as aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, or tungsten, or alloys with the aforementioned metals as the main component. Furthermore, films containing these materials can be used in single-layer or multi-layer structures. Examples include a single-layer structure of an aluminum film containing silicon; a two-layer structure of an aluminum film stacked on a titanium film; a two-layer structure of an aluminum film stacked on a tungsten film; a two-layer structure of a copper film stacked on a copper-magnesium-aluminum alloy film; a two-layer structure of a copper film stacked on a titanium film; a two-layer structure of a copper film stacked on a tungsten film; a three-layer structure of a titanium film or titanium nitride film, an aluminum film or a copper film, and a titanium film or titanium nitride film stacked sequentially; and a three-layer structure of a molybdenum film or molybdenum nitride film, an aluminum film or a copper film, and a molybdenum film or molybdenum nitride film stacked sequentially. Additionally, oxides such as indium oxide, tin oxide, or zinc oxide can be used. In addition, using copper containing manganese can improve the controllability of the shape during etching, so it is preferred.

[0222] Furthermore, as a transparent material suitable for use as a conductive layer in wiring and electrodes included in a display device, conductive oxides such as indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, and gallium-added zinc oxide, or graphene, can be used. Alternatively, metallic materials such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, or titanium, or alloys containing such metallic materials, can be used. Alternatively, nitrides of the metallic materials (e.g., titanium nitride) can also be used. When using metallic materials or alloys (or their nitrides), it is sufficient to form them thin enough to be transparent. Furthermore, a laminate of the above materials can be used as a conductive layer. For example, a laminate of an alloy of silver and magnesium with indium tin oxide is preferred, as this improves conductivity.

[0223] [Insulating layer]

[0224] As an insulating material that can be used in various insulating layers, protective layers, spacers, etc., it can be resins such as acrylic resin or epoxy resin, resins with siloxane bonds such as silicone, and inorganic insulating materials such as silicon oxide, silicon oxynitride, silicon oxynitride, silicon nitride, or aluminum oxide.

[0225] In addition, the light-emitting element is preferably disposed between a pair of insulating films with low water permeability, which can prevent water and other impurities from entering the light-emitting element. This can prevent a decrease in the reliability of the device.

[0226] As an insulating membrane with low water permeability, membranes containing nitrogen and silicon, such as silicon nitride membranes or silicon oxynitride membranes, and membranes containing nitrogen and aluminum, such as aluminum nitride membranes, can be used. Alternatively, silicon oxide membranes, silicon oxynitride membranes, and aluminum oxide membranes can also be used.

[0227] For example, the water vapor permeability of a low-permeability insulating membrane is 1×10 -5 [g / (m 2 ·day)] or less, preferably 1×10 -6 [g / (m 2 ·day)] or less, preferably 1×10 -7 [g / (m 2 ·day)] or less, is further preferably 1×10 -8 [g / (m 2 ·day)] below.

[0228] [Adhesive layer, sealant]

[0229] As an adhesive layer or sealant, various curing adhesives can be used, including UV-curing adhesives, reactive curing adhesives, thermosetting adhesives, and anaerobic adhesives. Examples of these adhesives include epoxy resins, acrylic resins, silicone resins, phenolic resins, polyimide resins, imide resins, PVC (polyvinyl chloride) resins, PVB (polyvinyl butyral) resins, and EVA (ethylene vinyl acetate) resins. Materials with low moisture permeability, such as epoxy resins, are particularly preferred. Two-component mixed resins can also be used. Furthermore, adhesive sheets can also be used.

[0230] In addition, a desiccant may be included in the aforementioned resin. For example, a substance that adsorbs moisture through chemical adsorption, such as an oxide of an alkaline earth metal (calcium oxide or barium oxide, etc.), may be used. Alternatively, a substance that adsorbs moisture through physical adsorption, such as zeolite or silica gel, may be used. Since the inclusion of a desiccant is preferred because it prevents impurities such as moisture from penetrating the functional components, thereby improving the reliability of the display panel, it is preferable to include a desiccant.

[0231] Furthermore, by mixing fillers or light-scattering components with high refractive indices into the aforementioned resins, the light extraction efficiency of the light-emitting element can be improved. For example, titanium oxide, barium oxide, zeolite, zirconium, etc., can be used.

[0232] [Light-emitting element]

[0233] As a light-emitting element, a self-emissive element can be used, and within this scope, elements whose brightness is controlled by current or voltage can be used. For example, light-emitting diodes (LEDs), organic EL elements, or inorganic EL elements can be used.

[0234] The light-emitting element can employ a top-emitting structure, a bottom-emitting structure, or a double-sided emitting structure. The electrode on the light-extracting side uses a conductive film that allows visible light to pass through. Conversely, the electrode on the non-light-extracting side preferably uses a conductive film that reflects visible light.

[0235] The EL layer includes at least a light-emitting layer. In addition to the light-emitting layer, the EL layer may also include layers containing materials with high hole injection capacity, materials with high hole transport capacity, hole blocking materials, materials with high electron transport capacity, materials with high electron injection capacity, or bipolar materials (materials with both high electron and hole transport capacity).

[0236] Low-molecular-weight compounds or high-molecular-weight compounds can be used as EL layers, and inorganic compounds can also be included. The layers constituting the EL layer can be formed by methods such as vapor deposition (including vacuum vapor deposition), transfer printing, printing, inkjet printing, and coating.

[0237] When a voltage higher than the threshold voltage of the light-emitting element is applied between the cathode and anode, holes are injected into the EL layer from the anode side, while electrons are injected into the EL layer from the cathode side. The injected electrons and holes recombine in the EL layer, thereby causing the light-emitting material contained in the EL layer to emit light.

[0238] When using a white-emitting light-emitting element as the light-emitting element, it is preferable that the EL layer contains two or more light-emitting materials. For example, white emission can be obtained by selecting the light-emitting materials in such a way that the emission of each of the two or more light-emitting materials is a complementary color relationship. For example, it is preferable to include two or more of the following light-emitting materials: light-emitting materials that emit light in the form of R (red), G (green), B (blue), Y (yellow), and O (orange), and light-emitting materials that emit light with spectral components containing two or more colors of R, G, and B. In addition, it is preferable to use a light-emitting element whose emission spectrum has two or more peaks in the wavelength range (e.g., 350 nm to 750 nm) of the visible light region. Furthermore, the emission spectrum of the material that has a peak in the yellow wavelength range preferably also has spectral components in the green and red wavelength ranges.

[0239] The EL layer preferably employs a stacked structure, comprising an emitting layer containing a emitting material that emits light of one color and emitting layers containing emitting materials that emit light of other colors. For example, multiple emitting layers in the EL layer can be stacked in contact with each other, or they can be stacked with regions that do not contain any emitting material between them. For instance, a region can be provided between a fluorescent emitting layer and a phosphorescent emitting layer that contains the same material (e.g., a host material, auxiliary material) as the fluorescent or phosphorescent emitting layer, but does not contain any emitting material. This simplifies the fabrication of the light-emitting element and reduces the driving voltage.

[0240] In addition, the light-emitting element can be either a single unit including one EL layer or a series element with multiple EL layers stacked together to generate light through charge.

[0241] As a conductive film that transmits visible light, indium oxide, indium tin oxide (ITO), indium zinc oxide, zinc oxide, and zinc oxide with gallium addition can be used, for example. Alternatively, it can be used by forming metals such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, or titanium, alloys containing these metals, or nitrides of these metals (e.g., titanium nitride) into a thin film that is transparent to light. Furthermore, a laminate of the above materials can be used as the conductive layer. For example, a laminate of an alloy of silver and magnesium with ITO is preferred, as this improves conductivity. Graphene can also be used.

[0242] As a conductive film that reflects visible light, materials such as aluminum, gold, platinum, silver, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, or palladium, or alloys containing these materials, can be used. Additionally, lanthanum, neodymium, or germanium can be added to the aforementioned materials or alloys. Furthermore, alloys containing aluminum (aluminum alloys), such as aluminum-titanium alloys, aluminum-nickel alloys, and aluminum-neodymium alloys, as well as alloys containing silver, such as silver-copper alloys, silver-palladium-copper alloys, and silver-magnesium alloys, can be used. Alloys containing silver and copper have high heat resistance and are therefore preferred. Furthermore, by laminating a metal film or metal oxide film in contact with the aluminum alloy film, oxidation of the aluminum film or aluminum alloy film can be suppressed. Examples of materials for the metal film or metal oxide film include titanium and titanium oxide. Additionally, a conductive film that transmits visible light can be laminated with a film made of a metallic material. For example, a laminated film of silver and ITO, or a laminated film of a silver-magnesium alloy and ITO, can be used.

[0243] The conductive layer can be formed using vapor deposition or sputtering. Alternatively, it can be formed using inkjet printing, screen printing, or plating.

[0244] Note that the aforementioned light-emitting layer, as well as layers containing substances with high hole injection capacity, high hole transport capacity, high electron transport capacity, high electron injection capacity, bipolar substances, etc., may contain inorganic compounds or polymeric compounds (oligomers, dendritic polymers, or polymers, etc.) such as quantum dots. For example, when used in a light-emitting layer, quantum dots can be used as the light-emitting material.

[0245] Quantum dots can be colloidal quantum dots, alloy quantum dots, core-shell quantum dots, nucleated quantum dots, etc. Furthermore, quantum dots can use elements from Groups 12 and 16, 13 and 15, and 14 and 16. Alternatively, they can use quantum dots containing elements such as cadmium, selenium, zinc, sulfur, phosphorus, indium, tellurium, lead, gallium, arsenic, and aluminum.

[0246] [Shading layer]

[0247] Examples of materials that can be used for coloring layers include metallic materials, resin materials, and resin materials containing pigments or dyes.

[0248] [Light-shielding layer]

[0249] Examples of materials suitable for use as light-shielding layers include carbon black, metal oxides, and composite oxides comprising solid solutions of multiple metal oxides. Additionally, laminated films using films containing colored layers can also be used as light-shielding layers. For example, a laminated structure can be used consisting of a film containing a colored layer for transmitting one color of light and a film containing a colored layer for transmitting other colors of light. It is preferable to form both the colored layer and the light-shielding layer using the same materials because the same apparatus can be used and the process can be simplified.

[0250] [Connection Layer]

[0251] As a connection layer for connecting FPC or IC to terminals, anisotropic conductive film (ACF) or anisotropic conductive paste (ACP) can be used.

[0252] The above is an explanation of each component element.

[0253] At least a portion of this embodiment can be implemented in combination with other embodiments described in this specification.

[0254] Implementation Method 3

[0255] In this embodiment, an example of a method for manufacturing a display device using a flexible substrate will be described.

[0256] Here, the layer comprising optical components such as light-emitting elements, circuits, wiring, electrodes, insulating layers, coloring layers, and light-shielding layers is collectively referred to as the component layer. The component layer includes, for example, light-emitting elements, and may also include wiring electrically connected to the light-emitting elements, transistors for pixels or circuits, and other components.

[0257] Furthermore, here, the flexible component that supports the element layer during the stage after the light-emitting element is completed (the manufacturing process is finished) is called a substrate. Examples of substrates include extremely thin films with a thickness of 10 nm or more and 300 μm or less.

[0258] There are typically two methods for forming a device layer on a flexible substrate with an insulating surface. One method is to form the device layer directly on the flexible substrate. The other method is to form the device layer on a support substrate different from the flexible substrate, and then separate the device layer from the support substrate and transfer the device layer to the substrate. In addition to these two methods, which are not described in detail here, there is also a method of forming a device layer on a non-flexible substrate and then thinning the substrate through polishing or other means to make the substrate flexible.

[0259] When the material constituting the substrate is heat-resistant to the heating process during the formation of the element layer, it is preferable to form the element layer directly on the substrate, as this simplifies the process. Alternatively, forming the element layer while the substrate is fixed to a support substrate facilitates transfer within and between devices, which is also preferable.

[0260] Furthermore, when using a method that transfers the element layer to the substrate after forming it on a support substrate, a release layer and an insulating layer are first stacked on the support substrate, and the element layer is formed on the insulating layer. Next, the element layer is peeled off from the support substrate and transferred to the substrate. At this time, a material is selected that causes peeling at the interface between the support substrate and the release layer, at the interface between the release layer and the insulating layer, or within the release layer. In the above method, by using a material with high heat resistance for the support substrate or the release layer, the upper limit of the temperature applied during the formation of the element layer can be increased, and an element layer including elements with higher reliability can be formed, which is therefore preferred.

[0261] For example, preferably, a layer containing a high-melting-point metal material such as tungsten and a layer containing an oxide of that metal material are used as the release layer. Alternatively, multiple layers, such as a silicon oxide layer, a silicon nitride layer, a silicon oxynitride layer, and a silicon oxynitride layer, are used as the insulating layer on the release layer. Note that in this specification, "oxynitride" contains more oxygen than nitrogen, and "oxynitride" contains more nitrogen than oxygen.

[0262] The element layer and the support substrate can be separated by applying mechanical force, etching the release layer, or allowing liquid to penetrate the release interface. Alternatively, the difference in thermal expansion coefficients at the release interface can be utilized to perform the separation by heating or cooling.

[0263] When peeling begins, it is preferable to form a peeling start point so that peeling can proceed from this point. The peeling start point can be formed by locally heating a portion of the insulation layer or peel layer using a laser or similar means, or by physically cutting or piercing a portion of the insulation layer or peel layer using a sharp component.

[0264] When peeling can be performed at the interface between the support substrate and the insulating layer, it is not necessarily necessary to provide a release layer.

[0265] For example, glass can be used as a supporting substrate, and organic resins such as polyimide can be used as an insulating layer, thereby allowing for separation at the interface between the glass and the organic resin. Residual organic resins such as polyimide can also be used as a substrate.

[0266] Alternatively, a heating layer can be disposed between the supporting substrate and the insulating layer made of organic resin. By heating the heating layer, the interface between the heating layer and the insulating layer can be peeled off. Various materials can be used as the heating layer, such as materials that generate heat through current flow, materials that generate heat through light absorption, and materials that generate heat through the application of a magnetic field. For example, the heating layer can be selected from semiconductors, metals, and insulators.

[0267] The following describes a more specific example of a manufacturing method. In the manufacturing method described below, a flexible input / output device according to one aspect of the present invention can be manufactured by changing the layer used as the peeling layer.

[0268] First, an island-shaped release layer 303 is formed on a substrate 301. Then, a release layer 305 is formed on the release layer 303. Figure 13A Additionally, an island-shaped release layer 323 is provided on the substrate 321. Then, a release layer 325 is provided on the release layer 323. Figure 13B ).

[0269] Although an example of forming the release layer into an island shape is described herein, the invention is not limited to this example. In this process, the material used for the release layer is the material that causes peeling at the interface between the forming substrate and the release layer, at the interface between the release layer and the released layer, or within the release layer itself when the release layer is peeled off from the forming substrate. In this embodiment, although the case of peeling occurring at the interface between the release layer and the release layer is illustrated, the invention is not limited to this example depending on the material used for the release layer or the release layer. Note that when the release layer has a stacked structure, the layer in contact with the release layer is specifically referred to as the first layer.

[0270] For example, when the release layer uses a laminated structure of tungsten film and tungsten oxide film and release occurs at (or near) the interface between the tungsten film and tungsten oxide film, a portion of the release layer (in this case, tungsten oxide film) may remain on the side of the released layer. Furthermore, the release layer remaining on the side of the released layer can be removed after release.

[0271] As the substrate for forming, a substrate with heat resistance that can withstand at least the processing temperature in the manufacturing process is used. Examples of substrates for forming include glass substrates, quartz substrates, sapphire substrates, semiconductor substrates, ceramic substrates, metal substrates, resin substrates, and plastic substrates.

[0272] When a glass substrate is used as the forming substrate, it is preferred to form an insulating film such as a silicon oxide film, silicon oxynitride film, silicon nitride film, or silicon oxynitride film as a base film between the forming substrate and the release layer, as this can prevent contamination from the glass substrate.

[0273] The release layer can be formed using materials selected from tungsten, molybdenum, titanium, tantalum, niobium, nickel, cobalt, zirconium, zinc, ruthenium, rhodium, palladium, osmium, iridium, and silicon; alloy materials containing these elements; or compound materials containing these elements. The silicon-containing layer can have an amorphous, microcrystalline, or polycrystalline crystalline structure. Additionally, metal oxides such as alumina, gallium oxide, zinc oxide, titanium dioxide, indium oxide, indium tin oxide, indium zinc oxide, or In-Ga-Zn oxide can also be used. Using high-melting-point metals such as tungsten, titanium, and molybdenum as the release layer increases the freedom of the release layer formation process, making it a preferred choice.

[0274] The release layer can be formed, for example, by sputtering, plasma CVD, coating (including spin coating, droplet jetting, distributor coating, etc.), printing, etc. The thickness of the release layer is, for example, 10 nm or more and 200 nm or less, preferably 20 nm or more and 100 nm or less.

[0275] When the release layer has a single-layer structure, it is preferable to form a tungsten layer, a molybdenum layer, or a layer containing a mixture of tungsten and molybdenum. Alternatively, it may form a layer containing an oxide or oxynitride of tungsten, a layer containing an oxide or oxynitride of molybdenum, or a layer containing an oxide or oxynitride of a mixture of tungsten and molybdenum. Furthermore, a mixture of tungsten and molybdenum may be, for example, an alloy of tungsten and molybdenum.

[0276] Furthermore, when forming a laminated structure of a tungsten-containing layer and a tungsten oxide-containing layer as a release layer, the tungsten oxide-containing layer can be formed at the interface between the tungsten layer and the insulating film by forming the tungsten-containing layer and then forming an insulating film made of oxide thereon. Alternatively, the tungsten oxide-containing layer can be formed by thermal oxidation treatment, oxygen plasma treatment, nitrous oxide (N₂O) plasma treatment, or treatment with a highly oxidizing solution such as ozone water. The plasma treatment or heat treatment can be performed in an atmosphere using only oxygen, nitrogen, or nitrous oxide, or in a mixed atmosphere of the above gases and other gases. By performing the above plasma treatment or heat treatment, the surface state of the release layer is changed, thereby controlling the adhesion between the release layer and the insulating film formed subsequently.

[0277] Alternatively, when peeling can be performed at the interface between the forming substrate and the release layer, a release layer may not be necessary. For example, a glass substrate is used as the forming substrate, and organic resins such as polyimide, polyester, polyolefin, polyamide, polycarbonate, and acrylic resin are formed in contact with the glass substrate. Next, the adhesion between the forming substrate and the organic resin is improved by laser irradiation or heat treatment. Furthermore, an insulating film and transistors are formed on the organic resin. Then, by laser irradiation with a higher energy density than the previous laser irradiation or by heat treatment at a higher temperature than the previous heat treatment, peeling can be performed at the interface between the forming substrate and the organic resin. Alternatively, during peeling, separation can also be achieved by immersing a liquid into the interface between the forming substrate and the organic resin.

[0278] Because insulating films and transistors are formed on organic resins with low heat resistance, the substrate cannot be exposed to high temperatures during the aforementioned manufacturing processes. Note that since transistors using oxide semiconductors do not necessarily require high-temperature processing, they can be appropriately formed on organic resins.

[0279] The organic resin can be used as a substrate for the device. Alternatively, the organic resin can be removed and the exposed surface of the release layer can be bonded to other substrates using an adhesive. Additionally, other substrates (support films) can be bonded to the organic resin using an adhesive.

[0280] Alternatively, a metal layer can be formed between the substrate and the organic resin, and the metal layer can be heated by passing an electric current through it to perform peeling at the interface between the metal layer and the organic resin.

[0281] The insulating layer (first layer) in contact with the release layer preferably has a single-layer or multi-layer structure made of silicon nitride film, silicon oxynitride film, silicon oxide film, or silicon oxynitride film. Note that the material of the insulating layer is not limited to this, and the optimal material can be selected according to the material used for the release layer.

[0282] The insulating layer can be formed by sputtering, plasma CVD, coating, or printing. For example, by using plasma CVD at a temperature of 250°C or higher and 400°C, the insulating layer can be a dense film with high moisture resistance. Furthermore, the thickness of the insulating layer is preferably 10 nm or more and 3000 nm or less, more preferably 200 nm or more and 1500 nm or less.

[0283] Next, the forming substrate 301 and the forming substrate 321 are bonded together with their respective surfaces having the release layer facing each other using the adhesive layer 307, and the adhesive layer 307 is cured. Figure 13C ).

[0284] Note that it is preferable to bond the forming substrate 301 and the forming substrate 321 together under a reduced pressure atmosphere.

[0285] In addition, although Figure 13C This illustrates the case where the sizes of the peeling layer 303 and the peeling layer 323 are different, but as... Figure 13D The same size peel layer can also be used as shown.

[0286] The adhesive layer 307 is arranged to overlap with the release layer 303, layer 305, layer 325, and release layer 323. Furthermore, the end of the adhesive layer 307 is preferably located inside the end of at least one of the release layers 303 and 323 (the layer to be released first). This prevents the forming substrate 301 from becoming tightly bonded to the forming substrate 321, thereby suppressing a decrease in yield in subsequent peeling processes.

[0287] As the adhesive layer 307, various curing adhesives such as reaction-curing adhesives, thermosetting adhesives, anaerobic adhesives, and light-curing adhesives such as UV-curing adhesives can be used. Examples of these adhesives include epoxy resins, acrylic resins, silicone resins, phenolic resins, polyimide resins, imide resins, PVC resins, PVB resins, and EVA resins. Materials with low moisture permeability, such as epoxy resins, are particularly preferred. As the adhesive, materials with low flowability that can be applied only to the desired area are preferred. For example, adhesive sheets, bonding sheets, sheet-like or film-like adhesives can also be used. For example, OCA (Optical Clear Adhesive) films can be suitably used.

[0288] Adhesives can be adhesive before bonding or become adhesive after bonding by heating or light exposure.

[0289] In addition, the resin described above may also contain a desiccant. For example, substances that adsorb moisture through chemical adsorption, such as oxides of alkaline earth metals (calcium oxide or barium oxide), or substances that adsorb moisture through physical adsorption, such as zeolite or silica gel, can be used. When a desiccant is included, the deterioration of functional components caused by the intrusion of moisture from the atmosphere can be suppressed, thereby improving the reliability of the device, and is therefore preferred.

[0290] Next, a peeling start point is formed by irradiating with a laser. Figure 14A , Figure 14B ).

[0291] The substrate 301 for forming can be peeled off first, or the substrate 321 for forming can be peeled off first. When the sizes of the release layers are different, the substrate with the larger release layer can be peeled off first, or the substrate with the smaller release layer can be peeled off first. When semiconductor devices, light-emitting devices, or other devices are formed on only one substrate, the substrate on the side where the device is formed can be peeled off first, or the other substrate can be peeled off first. Here, an example of peeling off the substrate 301 for forming first is shown.

[0292] Laser irradiation is applied to the overlapping areas of the cured bonding layer 307, layer 305, and release layer 303 (see reference). Figure 14A Arrow P1).

[0293] By removing a portion of the first layer, a peeling start point can be formed (with) Figure 14B (The area surrounded by the dotted line in the diagram). At this point, in addition to the first layer, the peeling layer 303, the bonding layer 307, or other layers contained in layer 305 can be partially removed.

[0294] Preferably, the laser is irradiated from the substrate side where the release layer to be peeled is provided. When the laser is irradiated on the area where the release layer 303 and the release layer 323 overlap, the laser passes through layers 305 and 325 only in layer 305 (refer to...). Figure 14B Cracks are formed in the area (surrounded by dashed lines) where the substrate 301 and the release layer 303 can be selectively peeled off. An example of partially removing each layer of layer 305 is shown here.

[0295] Next, layer 305 is separated from the substrate 301 at the peeling start point. Figure 14C , Figure 14D Therefore, layer 305 can be transferred from the forming substrate 301 to the forming substrate 321.

[0296] For example, layer 305 can be separated from substrate 301 by physical force (such as peeling by hand or clamp, or separating by rotating rollers) from the peeling point.

[0297] Alternatively, the substrate 301 and layer 305 can be separated by allowing a liquid such as water to permeate the interface between the release layer 303 and layer 305. Separation is facilitated by the capillary action of the liquid penetrating between the release layer 303 and layer 305. Furthermore, the adverse effects of static electricity generated during release on the functional elements contained in layer 305 (such as damage to semiconductor elements due to static electricity) can be suppressed.

[0298] Next, adhesive layer 333 is used to bond the exposed layer 305 to the substrate 331, and adhesive layer 333 is cured. Figure 15A ).

[0299] Note that it is preferable to bond layer 305 to substrate 331 under a reduced pressure atmosphere.

[0300] Next, a peeling start point is formed by irradiating with a laser. Figure 15B , Figure 15C ).

[0301] Laser irradiation is applied to the overlapping areas of the cured adhesive layer 333, layer 325, and release layer 323 (see reference). Figure 15B Arrow P2). A portion of the first layer is removed, thus creating a peeling start point (with...). Figure 15C The area enclosed by the dotted line in the diagram. (An example is shown here where the layers constituting layer 325 are partially removed). In this case, in addition to the first layer, the peeling layer 323, the adhesive layer 333, or other layers contained in layer 325 may also be partially removed.

[0302] Preferably, a laser is irradiated onto a substrate 321 on which a release layer 323 is provided.

[0303] Next, layer 325 is separated from the substrate 321 formed from the peeling start point (see reference). Figure 15D Therefore, layers 305 and 325 can be transposed onto substrate 331.

[0304] Then, layer 325 can also be bonded to other substrates.

[0305] The exposed layer 325 is bonded to the substrate 341 using adhesive layer 343, and the adhesive layer 343 is then cured. Figure 16A ). Figure 16A An example is shown where an opening is pre-formed in the substrate 341.

[0306] In this way, the stripped layer can be clamped between a pair of flexible substrates.

[0307] Then, as Figure 16B As shown, unwanted ends of substrates 331 and 341 are removed by cutting. At the same time, a portion of the ends of layers 305 and 325 can also be cut off.

[0308] Flexible devices can be manufactured using the methods described above. The peelable layer having the structure shown in the above embodiments can be used to manufacture flexible display devices.

[0309] In the manufacturing method of the display device according to one aspect of the present invention, after a pair of forming substrates, each having a release layer and a peelable layer respectively, are bonded together, a peeling starting point is formed by irradiating with a laser, making it easy to peel the peelable layer from the release layer. As a result, the yield of the peeling process can be improved.

[0310] Furthermore, after pre-bonding the forming substrates, each having a release layer, together, the release layer is peeled off, and then the substrate constituting the device to be manufactured can be bonded to the release layer. As described above, when the release layers are bonded together, forming substrates with low flexibility can be bonded together, thus improving the alignment accuracy during bonding compared to bonding flexible substrates together.

[0311] like Figure 17A As shown, the end of the peeled region 351 of layer 305 is preferably located inside the end of the peeling layer 303. This improves the yield of the peeling process. When multiple regions 351 exist, it can be arranged as follows: Figure 17B As shown, a peeling layer 303 can be set for each region 351, or as shown in the figure. Figure 17C As shown, multiple regions 351 are set on a peeling layer 303.

[0312] The above is an explanation of the manufacturing method of flexible display devices.

[0313] At least a portion of this embodiment can be implemented in combination with other embodiments described in this specification.

[0314] Implementation Method 4

[0315] In this embodiment, an example of an electronic device that may include a display device according to one aspect of the present invention will be described.

[0316] By using the display device according to one aspect of the present invention, electronic devices and lighting devices can be manufactured. Electronic devices and lighting devices with high display quality can be manufactured by using the display device according to one aspect of the present invention. Electronic devices and lighting devices with high viewing angle characteristics can be manufactured by using the display device according to one aspect of the present invention. Electronic devices and lighting devices with low power consumption can be manufactured by using the display device according to one aspect of the present invention. Furthermore, electronic devices and lighting devices with high reliability can be manufactured by using the display device according to one aspect of the present invention.

[0317] Examples of electronic devices include: television sets; desktop or laptop personal computers; monitors for computers, etc.; digital cameras; digital video cameras; digital photo frames; mobile phones; portable game consoles; portable information terminals; sound reproduction devices; and large game machines such as pinball machines.

[0318] An electronic device or lighting device of one aspect of the present invention can be assembled along the curved surface of the inner or outer wall of a house or high-rise building, or the interior or exterior decoration of a car.

[0319] Furthermore, an electronic device according to one aspect of the present invention may also include a secondary battery, which is preferably charged by contactless power transmission.

[0320] Examples of secondary batteries include lithium-ion secondary batteries such as lithium polymer batteries (lithium-ion polymer batteries) that use gel electrolytes, nickel-metal hydride batteries, nickel-cadmium batteries, organic free radical batteries, lead-acid batteries, air secondary batteries, nickel-zinc batteries, silver-zinc batteries, etc.

[0321] An electronic device according to one aspect of the present invention may also include an antenna. By receiving signals through the antenna, images or data can be displayed on a display unit. Furthermore, when the electronic device includes both an antenna and a secondary battery, the antenna can be used for contactless power transmission.

[0322] An electronic device according to one aspect of the present invention includes a sensor (the sensor having the function of measuring factors such as force, displacement, position, velocity, acceleration, angular velocity, number of rotations, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, tilt, vibration, odor, or infrared radiation).

[0323] An electronic device according to one aspect of the present invention may have the following functions: displaying various information (static images, dynamic images, text images, etc.) on a display unit; a touch panel; displaying calendars, dates, or times, etc.; executing various software (programs); performing wireless communication; and reading programs or data stored in a storage medium.

[0324] Furthermore, electronic devices including multiple display units may have the function of primarily displaying image information on one display unit and primarily displaying text information on another display unit, or the function of displaying three-dimensional images by displaying images that take parallax into account on multiple display units. Moreover, electronic devices with image receiving units may have the following functions: capturing still images; capturing moving images; automatically or manually correcting captured images; storing captured images in a recording medium (an external recording medium or a recording medium built into the electronic device); displaying captured images on a display unit; and so on. However, the functions of the electronic device according to one aspect of the present invention are not limited to these; the electronic device may have various functions.

[0325] Figures 18A to 18E An example of an electronic device with a curved display unit 7000 is shown. Because the display surface of the display unit 7000 is curved, it is possible to display along the curved display surface. The display unit 7000 may also be flexible.

[0326] The display unit 7000 is formed using a display device according to one aspect of the present invention. According to one aspect of the present invention, an electronic device with low power consumption, a flexible display unit, and high reliability can be provided.

[0327] Figure 18A and Figure 18B An example of a mobile phone is shown. Figure 18A The mobile phone 7100 shown is Figure 18B The mobile phone 7110 shown includes a housing 7101, a display 7000, operation buttons 7103, an external connection port 7104, a speaker 7105, a microphone 7106, etc. Figure 18B The mobile phone 7110 shown also includes a camera 7107.

[0328] Each of the aforementioned mobile phones includes a touch sensor in its display unit 7000. Various operations, such as making calls or inputting text, can be performed by touching the display unit 7000 with a finger or stylus.

[0329] By operating button 7103, the power can be switched on and off. Furthermore, the type of image displayed on the display unit 7000 can be switched; for example, the email composing screen can be switched to the main menu screen.

[0330] When a gyroscope sensor or accelerometer is installed inside the mobile phone, the display on the display unit 7000 is automatically switched by determining the orientation of the mobile phone (whether it is horizontal or vertical). Alternatively, the display can be switched by touching the display unit 7000, operating the operation button 7103, or inputting sound using the microphone 7106.

[0331] Figure 18C and Figure 18D An example of a portable information terminal is shown. Figure 18C The portable information terminal 7200 shown is Figure 18D The portable information terminals 7210 shown all include a housing 7201 and a display unit 7000. Each portable information terminal may also include operation buttons, an external connection port, a speaker, a microphone, an antenna, a camera, or a battery. The display unit 7000 is equipped with a touch sensor. The portable information terminal can be operated by touching the display unit 7000 with a finger or a stylus.

[0332] The portable information terminal illustrated in this embodiment has one or more functions selected from telephones, e-notebooks, and information reading devices. Specifically, this portable information terminal can be used as a smartphone. The portable information terminal illustrated in this embodiment can execute various applications such as mobile phone, email, article reading and writing, music playback, network communication, and computer games.

[0333] Portable information terminals 7200 and 7210 can display text and image information on multiple surfaces. For example, Figure 18C , Figure 18D As shown, three operation buttons 7202 can be displayed on one surface, while information 7203 represented by rectangles can be displayed on other surfaces. Figure 18C An example is shown where information is displayed on the top surface of a portable information terminal, while Figure 18D An example is shown where information is displayed on the side of a portable information terminal. Information can also be displayed on three or more sides of the portable information terminal.

[0334] In addition, examples of such information could include notifications from SNS (Social Networking Services), emails, or phone calls; email subject lines or sender names; dates; times; battery levels; and antenna reception strength. Alternatively, action buttons or icons could be displayed in place of the information.

[0335] For example, the user of the portable information terminal 7200 can check its display (information 7203) while the portable information terminal 7200 is placed in a shirt pocket.

[0336] Specifically, the caller's phone number or name is displayed in a location visible above the portable information terminal 7200. Users can see this display without taking the portable information terminal 7200 out of their pocket, thus determining whether to answer the call.

[0337] Figure 18E An example of a television device is shown. In the television device 7300, a display unit 7000 is assembled in a housing 7301. Here is shown the structure in which the housing 7301 is supported by a bracket 7303.

[0338] Figure 18E The television device 7300 shown can be operated using the operation switch on the housing 7301 or a separate remote control 7311. Alternatively, a touch sensor can be included in the display unit 7000, allowing operation by touching the display unit 7000 with a finger or similar object. The remote control 7311 may also have a display unit that shows data output from the remote control 7311. Using the operation keys or touch panel on the remote control 7311, channel and volume adjustments can be made, and the image displayed on the display unit 7000 can be manipulated.

[0339] Note that the television device 7300 is equipped with a receiver and a modem. It can receive general television broadcasts using the receiver. Furthermore, the television device can be connected to a wired or wireless communication network via a modem to perform one-way (from sender to receiver) or two-way (between sender and receiver, or between receivers, etc.) information communication.

[0340] Figure 18F An example of a lighting device with a curved light-emitting part is shown.

[0341] Manufacturing a display device, etc., using one aspect of the present invention Figure 18F The lighting device shown has a light-emitting portion. According to one aspect of the present invention, a highly reliable lighting device with low power consumption and a curved light-emitting portion can be provided.

[0342] Figure 18F The lighting device 7400 shown has a light-emitting part 7411 with two light-emitting parts symmetrically arranged and bent into a convex shape. Therefore, light shines from the lighting device 7400 in all directions.

[0343] Furthermore, the various light-emitting parts 7411 provided in the lighting device 7400 can also be flexible. A structure can also be adopted in which the light-emitting parts 7411 are fixed using plastic components or movable frames, and the light-emitting surface of the light-emitting parts 7411 can be bent freely according to the application.

[0344] The lighting device 7400 includes a base 7401 with an operation switch 7403 and a light-emitting part 7411 supported by the base 7401.

[0345] Although a lighting device with a base supporting the light-emitting part is illustrated here, the lighting device can also be used by fixing or suspending the housing containing the light-emitting part from the ceiling. Since the lighting device can be used with the light-emitting surface bent, it is possible to make the light-emitting surface bend concavely to illuminate a specific area or bend the light-emitting surface convexly to illuminate the entire room.

[0346] Figures 19A to 19I An example of a portable information terminal with a flexible and bendable display 7001 is shown.

[0347] The display unit 7001 can be manufactured using a display device or the like according to one aspect of the present invention. For example, a display device or the like capable of being bent with a radius of curvature of 0.01 mm or more and 150 mm or less can be used. Furthermore, the display unit 7001 can be equipped with a touch sensor, allowing operation of a portable information terminal by touching the display unit 7001 with a finger or the like. Through one aspect of the present invention, an electronic device with a flexible display unit and high reliability can be provided.

[0348] Figure 19A and Figure 19B This is a perspective view showing an example of a portable information terminal. The portable information terminal 7500 includes a housing 7501, a display unit 7001, a removable component 7502, and operation buttons 7503, etc.

[0349] The portable information terminal 7500 includes a flexible display section 7001 rolled into a cylindrical shape within a housing 7501. The display section 7001 can be removed using a removal member 7502.

[0350] Furthermore, the portable information terminal 7500 can receive image signals via its built-in control unit and display the received images on the display unit 7001. Additionally, a battery is built into the portable information terminal 7500. Alternatively, the housing 7501 can be equipped with terminals for connecting connectors, allowing for wired direct supply of image signals or power from an external source.

[0351] In addition, the power can be switched on / off or the displayed image can be switched using the operation button 7503. Figure 19A and Figure 19B An example is shown with operation buttons 7503 configured on the side of the portable information terminal 7500, but it is not limited to this. Operation buttons 7503 may also be configured on the same side (front) as the display surface (front) of the portable information terminal 7500 or on the back.

[0352] Figure 19B The portable information terminal 7500 is shown in a state where the display unit 7001 is removed. In this state, images can be displayed on the display unit 7001. Alternatively, the portable information terminal 7500 can also roll a portion of the display unit 7001 into a cylindrical shape. Figure 19A The status shown and the removal of the display unit 7001 Figure 19B The displayed state is shown in different ways. For example, by... Figure 19A In this state, the rolled-up portion of the display unit 7001 is made non-displaying, reducing the power consumption of the portable information terminal 7500.

[0353] Additionally, a reinforcement frame can be provided on the side of the display unit 7001 so that the display surface of the display unit 7001 is fixed as a flat surface when the display unit 7001 is removed.

[0354] In addition to this structure, a structure can also be adopted in which a speaker is installed in the housing and the sound is output using an audio signal that is received simultaneously with the video signal.

[0355] Figures 19C to 19E An example of a foldable portable information terminal is shown. Figure 19C The portable information terminal 7600 is shown unfolded. Figure 19DThe portable information terminal 7600 is shown unfolding or folding. Figure 19E The portable information terminal 7600 is shown in its folded state. The portable information terminal 7600 is highly portable in its folded state, and offers excellent visibility when unfolded due to its large, seamlessly integrated display area.

[0356] The display unit 7001 is supported by three housings 7601 connected by hinges 7602. By folding between two housings 7601 using hinges 7602, the portable information terminal 7600 can be changed from an unfolded state to a folded state.

[0357] Figure 19F and Figure 19G An example of a foldable portable information terminal is shown. Figure 19F The portable information terminal 7650 is shown folded so that the display 7001 is on the inside. Figure 19G The portable information terminal 7650 is shown folded so that the display unit 7001 is on the outside. The portable information terminal 7650 includes a display unit 7001 and a non-display unit 7651. By folding the display unit 7001 inward when the portable information terminal 7650 is not in use, it is possible to prevent the display unit 7001 from getting dirty and damaged.

[0358] Figure 19H An example of a flexible portable information terminal is shown. The portable information terminal 7700 includes a housing 7701 and a display unit 7001. It may also include buttons 7703a and 7703b used as input units, speakers 7704a and 7704b used as audio output units, an external connection port 7705, and a microphone 7706. Furthermore, the portable information terminal 7700 may be equipped with a flexible battery 7709. The battery 7709 may also overlap with the display unit 7001, for example.

[0359] The outer casing 7701, display unit 7001, and battery 7709 are flexible. Therefore, the portable information terminal 7700 can be easily bent into a desired shape and twisted. For example, the portable information terminal 7700 can also be used with the display unit 7001 positioned on the inside or outside. Alternatively, it can be used while rolled into a cylinder. Thus, because the outer casing 7701 and display unit 7001 can be freely deformed, the portable information terminal 7700 has the advantage of not easily breaking even if dropped or subjected to unintentional external force.

[0360] Because the portable information terminal 7700 is lightweight, it can be used conveniently in various situations. For example, the portable information terminal 7700 can be used with the upper part of the casing 7701 hanging with a clip or the casing 7701 fixed to a wall with a magnet or the like.

[0361] Figure 19I An example of a wristwatch-type portable information terminal is shown. The portable information terminal 7800 includes a watch strap 7801, a display unit 7001, an input / output terminal 7802, and operation buttons 7803, etc. The watch strap 7801 functions as a housing. Additionally, the portable information terminal 7800 may be equipped with a flexible battery 7805. The battery 7805 may also overlap, for example, the display unit 7001 or the watch strap 7801.

[0362] The watch strap 7801, display unit 7001, and battery 7805 are flexible. Therefore, the portable information terminal 7800 can be easily bent into a desired shape.

[0363] In addition to time setting, the operation button 7803 can also function as a power switch, a wireless communication switch, a silent mode switch, and a power-saving mode switch. For example, the functions of the operation button 7803 can be freely configured using the operating system integrated into the portable information terminal 7800.

[0364] The application can be launched by touching the icon 7804 displayed on the display unit 7001 with a finger or the like.

[0365] In addition, the portable information terminal 7800 can perform short-range wireless communication according to communication standards. For example, it can make hands-free calls by communicating with a headset that can perform wireless communication.

[0366] Furthermore, the portable information terminal 7800 may also include an input / output terminal 7802. When the input / output terminal 7802 is included, the portable information terminal 7800 can directly exchange data with other information terminals via a connector. Additionally, charging can also be performed via the input / output terminal 7802. Furthermore, the charging operation of the portable information terminal illustrated in this embodiment can also be performed using contactless power transmission, without using the input / output terminal 7802.

[0367] Figure 20A This is an exterior view of the 7900 car. Figure 20B The driver's seat of car 7900 is shown. Car 7900 includes body 7901, wheels 7902, windshield 7903, lights 7904, fog lights 7905, etc.

[0368] The display device according to one aspect of the present invention can be used in the display unit of an automobile 7900, etc. For example, the display device according to one aspect of the present invention can be used in... Figure 20B The display units 7910 to 7917 shown.

[0369] Display units 7910 and 7911 are installed on the windshield of an automobile. By using a conductive material with light transmittance to manufacture the electrodes in the display device, the display device of one aspect of the present invention can be made into a so-called transparent display device that allows the view to be seen from the other side. This transparent display device will not obstruct the driver's view when driving the automobile 7900. Therefore, the display device of one aspect of the present invention can be installed on the windshield of the automobile 7900. In addition, when transistors or the like are installed in the display device, it is preferable to use transistors with light transmittance, such as organic transistors using organic semiconductor materials or transistors using oxide semiconductor materials.

[0370] Display unit 7912 is installed on the pillar section. Display unit 7913 is installed on the instrument panel section. For example, by displaying images from an imaging unit installed on the vehicle body on display unit 7912, the field of vision obstructed by the pillar can be supplemented. Similarly, display unit 7913 can supplement the field of vision obstructed by the instrument panel, and display unit 7914 can supplement the field of vision obstructed by the doors. In other words, by displaying images from imaging units installed on the exterior of the vehicle, blind spots can be filled, thereby improving safety. In addition, by displaying images to supplement areas that the driver cannot see, it is possible to make it easier and more comfortable for the driver to confirm safety.

[0371] Additionally, display unit 7917 is located on the steering wheel. Display units 7915, 7916, or 7917 can display navigation information, speedometer, tachometer, driving distance, fuel level, gear position, air conditioning settings, and various other information. Furthermore, the user can appropriately change the displayed content and layout on the display units. Display units 7910 to 7914 can also display the aforementioned information.

[0372] Display units 7910 to 7917 can also be used as lighting devices.

[0373] The display portion of a display device according to one aspect of the present invention may be flat. In this case, the display device according to one aspect of the present invention does not necessarily need to be curved or flexible.

[0374] Figure 20C and Figure 20DThis example shows a digital signage unit. Digital signage typically includes a housing 8000, a display unit 8001, and a speaker 8003. Additionally, digital signage may include LED lights, operation buttons (including power switches or operation switches), connection terminals, various sensors, and a microphone.

[0375] Figure 20D The image shows a digital signboard mounted on a cylindrical column.

[0376] The larger display unit 8001 can provide more information at once. In addition, the larger display unit 8001 attracts more attention, and is therefore expected to improve advertising effectiveness, for example.

[0377] By using a touch panel for the display unit 8001, not only can static or dynamic images be displayed on the display unit 8001, but users can also operate it intuitively, making it preferable. Furthermore, when used to provide information such as route information or traffic information, intuitive operation enhances ease of use.

[0378] Figure 20E The portable game console shown includes a casing 8101, a casing 8102, a display unit 8103, a display unit 8104, a microphone 8105, a speaker 8106, operation keys 8107, and a stylus 8108, etc.

[0379] Figure 20E The portable game console shown includes two display units 8103 and 8104. Furthermore, the number of display units included in an electronic device according to one aspect of the present invention is not limited to two; as long as at least one display unit includes a display device according to one aspect of the present invention, it can be one or more display units.

[0380] Figure 20F A notebook computer is shown, including a casing 8111, a display 8112, a keyboard 8113, and a pointing device 8114.

[0381] The display device according to one aspect of the present invention can be used in the display unit 8112.

[0382] Figure 21A This is an exterior view of the camera 8400, which is equipped with a viewfinder 8500.

[0383] The camera 8400 includes a housing 8401, a display unit 8402, operation buttons 8403, a shutter button 8404, etc. In addition, the camera 8400 is equipped with a detachable lens 8406.

[0384] Although the lens 8406 of this camera 8400 can be removed from the housing 8401 and replaced, the lens 8406 can also be moved into the housing.

[0385] The camera 8400 can take an image by pressing the shutter button 8404. Additionally, the display unit 8402 is used as a touch panel, and images can also be taken when the display unit 8402 is touched.

[0386] The housing 8401 of the camera 8400 includes an insert with electrodes and can be connected to a viewfinder 8500, a flash unit, etc.

[0387] The viewfinder 8500 includes a housing 8501, a display unit 8502, and buttons 8503, etc.

[0388] The housing 8501 includes an inserter that fits into the camera 8400, allowing the viewfinder 8500 to be mounted onto the camera 8400. The inserter includes electrodes that can display moving images or the like received from the camera 8400 onto the display unit 8502.

[0389] Button 8503 is used as a power button. By using button 8503, the display unit 8502 can be switched between displaying and not displaying.

[0390] One embodiment of the present invention provides a display device that can be used in the display unit 8402 of a camera 8400 and the display unit 8502 of a viewfinder 8500.

[0391] Although, Figure 21A In this invention, the camera 8400 and the viewfinder 8500 are separate and detachable electronic devices, but the viewfinder with a display device according to one aspect of the present invention can also be built into the housing 8401 of the camera 8400.

[0392] also, Figure 21B This is the appearance of the 8200 head-mounted display.

[0393] The head-mounted display 8200 includes a mounting section 8201, a lens 8202, a main body 8203, a display section 8204, and a cable 8205. Additionally, a battery 8206 is built into the mounting section 8201.

[0394] Power is supplied from battery 8206 to main body 8203 via cable 8205. Main body 8203 includes a wireless receiver and can display image information, such as received image data, on display unit 8204. In addition, by using a camera installed in main body 8203 to capture the user's eyeball and eyelid movements, and calculating the coordinates of the user's viewpoint based on this information, the user's viewpoint can be used as an input unit.

[0395] Alternatively, multiple electrodes can be provided at the locations on the mounting section 8201 that are touched by the user. The main body 8203 can also have the function of identifying the user's gaze point by detecting the current flowing through the electrodes according to the user's eye movements. Furthermore, the main body 8203 can have the function of monitoring the user's pulse by detecting the current flowing through the electrodes. The mounting section 8201 can have various sensors such as temperature sensors, pressure sensors, or acceleration sensors, thereby enabling the display of the user's biometric information on the display section 8204. In addition, the main body 8203 can also detect the user's head movements, etc., and move the image displayed on the display section 8204 in sync with the user's head movements, etc.

[0396] A display device to which one aspect of the present invention can be applied to the display unit 8204.

[0397] Figure 21C and Figure 21D This is the appearance of the 8300 head-mounted display.

[0398] The head-mounted display 8300 includes a housing 8301, two display units 8302, operation buttons 8303, and a strap-shaped fixing tool 8304.

[0399] The head-mounted display 8300 has the functions of the head-mounted display 8200 described above and has two display units.

[0400] Because it includes two display units 8302, the user's eyes see different display units. Therefore, even in situations such as 3D display using parallax, high-definition images can be displayed. Furthermore, the display unit 8302 is curved into an arc shape approximately centered on the user's eyes. This ensures that the distance from the user's eyes to the display surface of the display unit is constant, allowing the user to see a more natural image. Since the user's eyes are located in the normal direction to the display surface, the changes in brightness or color of light from the display unit depending on the viewing angle are practically negligible, resulting in more realistic images.

[0401] Operation button 8303 has functions such as a power button. Alternatively, it may include buttons other than operation button 8303.

[0402] In addition, such as Figure 21E As shown, a lens 8305 can be provided between the display unit 8302 and the user's eyes. The user can view the magnified image on the display unit 8302 through the lens 8305, thus improving the realism. At this time, as... Figure 21E As shown, it can also be set as a dial 8306 for adjusting the eyepiece focus and changing the position of the lens.

[0403] The display device according to one aspect of the present invention can be used in the display unit 8302. Because the display device according to one aspect of the present invention has extremely high resolution, even if... Figure 21E Using the 8305 lens to magnify the image in that way allows for a more realistic image to be displayed without the user seeing the pixels.

[0404] Figures 22A to 22C An example including a display unit 8302 is shown. By adopting this structure, the number of components can be reduced.

[0405] The display unit 8302 displays two images, one for the right eye and one for the left eye, side by side in two areas. This allows for the display of stereoscopic dynamic images utilizing binocular parallax.

[0406] Alternatively, an image that can be viewed by both eyes can be displayed across the entire area of ​​the display unit 8302. This allows for the display of a panoramic dynamic image spanning both ends of the field of view, thus providing a more realistic representation.

[0407] In addition, such as Figure 22C As shown, lens 8305 can also be provided. Two images can be displayed side by side on display unit 8302, or one image can be displayed on display unit 8302 and seen by both eyes through lens 8305.

[0408] At least a portion of this embodiment can be implemented in combination with other embodiments described in this specification.

[0409] Example

[0410] The time required for charging and discharging of each wire in a display device according to one aspect of the present invention is calculated. Figure 26A This is a block diagram of the display device used in computing. Figure 26B It is a circuit diagram of the manufactured pixels corresponding to the top view.

[0411] Figure 26A The block diagram of the display device shown illustrates a so-called 8K panel with a 65-inch screen, comprising 7680 × 4320 pixels (PIX) composed of RGBW (red, green, blue, white) sub-pixels arranged in stripes. Scan line drive circuits (gate drivers) configured on both sides are fabricated using Gate on Array (GOA) technology, and scan signals are output to the pixels (PIX). Signal line drive circuits (source drivers) are located externally.

[0412] Figure 26B yes Figure 26A The circuit diagram of the pixel shown. Figure 26B The circuit diagram shown has a structure equivalent to Figure 7AThe configuration of capacitor C2 in the structure has been changed.

[0413] exist Figure 26B In the structure, such as Figure 7A In transistor M4, the first gate electrode and the second gate electrode are not connected. Due to this structure, compared to the case where the gate electrodes are connected to each other, the gate capacitance between the scan line GL and transistor M4 can be formed only between the scan line GL and the first gate electrode.

[0414] Figure 27 Is with Figure 26B A top view of the corresponding pixels. Figure 27 The pixel shown includes four sub-pixels of RGBW. Note that the corresponding structures in the circuit diagram are accompanied by the same symbols. By utilizing... Figure 26A , Figure 26B and Figure 27 The estimated charging and discharging times for each structure, including scan lines and signal lines, are shown. Various calculations are performed using SILVACO's "SmartSpice" software to estimate the charging and discharging times. Furthermore, the pixel size is 188μm × 188μm, transistor M4 has a channel length L of 4μm and a channel width W of 4μm, and transistor M5 has a channel length L of 6μm and a channel width W of 6μm.

[0415] Table 1 shows the calculation results. In Table 1, "Gate fall time" represents the time until the signal falls off the scan line, "Signal line charging time (>95%)" represents the time required for the signal line to charge to 95%, "Total" represents the sum of the gate fall time and the signal line charging time, and "One horizontal scan period" represents one horizontal scan period.

[0416] Table 1

[0417]

[0418] As shown in Table 1, the charging and discharging times of the scan lines and signal lines are within one horizontal scan period. This means that the gate capacitance of the transistors connected to the scan lines is small, and the display device of one aspect of the present invention is suitable for 8K panels.

[0419] Explanation of reference numerals in the attached figures

[0420] GL: Scan line; SL: Signal line; VO: Wiring; ANODE: Current supply line; M1: Transistor; M2: Transistor; M3: Transistor; C1: Capacitor; EL: Light-emitting element; CATHODE: Common wiring; 100: Transistor; 102: Substrate; 104: Insulating layer; 106: Conductive layer; 108: Oxide semiconductor layer; 110: Insulating layer; 112: Oxide semiconductor layer; 116: Insulating layer; 108i: Channel region; 108s: Source region; 108d: Drain region; 141a: Opening; 141b: Opening; 120a: Conductive layer; 120b: Conductive layer; 151: Conductive layer; 152: Conductive layer; 153: Insulating layer; 161: Oxide semiconductor Layer; 162: Oxide semiconductor layer; 163: Oxide semiconductor layer; 164: Insulating layer; 171: Oxide semiconductor layer; 172: Oxide semiconductor layer; 173: Oxide semiconductor layer; 174: Insulating layer; 181: Conductive layer; 182: Conductive layer; 183: Conductive layer; 184: Conductive layer; 185: Conductive layer; 186: Insulating layer; 187: Insulating layer; 190: Opening; 191: Conductive layer; 192: Conductive layer; 193: Insulating layer; 198: Light-emitting layer; 199: Spacer layer; 10: Display device; 11: Pixel unit; 12: Scan line drive circuit; 13: Signal line drive circuit; 15: Terminal; 16a: Wiring; 16b: Wiring; 22: Area; 24: Area M4: Transistor; M5: Transistor; M6: Transistor; M7: Transistor; M8: Transistor; M9: Transistor; M10: Transistor; M11: Transistor; C2: Capacitor; C3: Capacitor; C4: Capacitor; C5: Capacitor; GL1: Scan line; GL2: Scan line; GL3: Scan line; GL4: Scan line; V1: Wiring; V2: Wiring; 201: Substrate; 202: Substrate; 211: Insulating layer; 212: Insulating layer; 213: Insulating layer; 214: Insulating layer; 215: Spacer; 216: Insulating layer; 217: Insulating layer; 218: Insulating layer; 220: Adhesive layer; 221: Insulating layer; 222: EL layer; 223: Electrode; 224: Optical layer 225: Pixel electrode; 230a: Structure; 230b: Structure; 231: Light-shielding layer; 232: Color layer; 242: FOP; 243: Connecting layer; 250: Spatial layer; 251: Transistor; 252: Transistor; 253: Capacitor element; 254: Light-emitting element; 255: Transistor; 260: Sealant; 261: Adhesive layer; 262: Adhesive layer; 271: Semiconductor layer; 272: Conductive layer; 273: Conductive layer; 274: Conductive layer; 275: Conductive layer; 276: Insulating layer; 291: Conductive layer; 292: Conductive layer; 293: Conductive layer; 294: Insulating layer; 295: Adhesive layer; 296: Substrate; 297: FOP; 298: Connecting layer;299: Terminal portion; 301: Substrate for forming; 303: Release layer; 305: Released layer; 307: Adhesive layer; 321: Substrate for forming; 323: Release layer; 325: Released layer; 331: Substrate; 333: Adhesive layer; 341: Substrate; 343: Adhesive layer; 351: Area; 7000: Display unit; 7001: Display unit; 7100: Mobile phone; 7101: Housing; 7103: Operation button; 7104: External connection port; 7105: Speaker; 7106: Microphone; 7107: Camera; 7110: Mobile phone; 7200: Portable information terminal; 7201: Housing; 7202: Operation button; 7203: Information; 7210: Portable information terminal; 7300: Television device; 7301: Housing; 7303: Stand; 7311: Remote control; 7400: Lighting device; 7401: Base; 7403: Operation switch; 7411: Light-emitting part; 7500: Portable information terminal; 7501: Housing; 7502: Removal component; 7503: Operation button; 7600: Portable information terminal; 7601: Housing; 7602: Hinge; 7650: Portable information terminal; 7651: Non-display part; 7700: Portable information terminal; 7701: Housing; 7703a: Button; 7703b: Button; 7704a: Speaker; 7704b: Speaker; 7705: External connection port; 770 6: Microphone; 7709: Battery; 7800: Portable Information Terminal; 7801: Watch Strap; 7802: Input-Output Terminal; 7803: Operation Button; 7804: Icon; 7805: Battery; 7900: Car; 7901: Vehicle Body; 7902: Wheel; 7903: Windshield; 7904: Light; 7905: Fog Light; 7910: Display Unit; 7911: Display Unit; 7912: Display Unit; 7913: Display Unit; 7914: Display Unit; 7915: Display Unit; 7916: Display Unit; 7917: Display Unit; 8000: Housing; 8001: Display Unit; 8003: Speaker; 8101: Housing; 8102: Housing; 8103: Display Unit; 810 4: Display unit; 8105: Microphone; 8106: Speaker; 8107: Operation keys; 8108: Stylus; 8111: Housing; 8112: Display unit; 8113: Keyboard; 8114: Pointing device; 8200: Head-mounted display; 8201: Mounting unit; 8202: Lens; 8203: Main body; 8204: Display unit; 8205: Cable; 8206: Battery; 8300: Head-mounted display; 8301: Housing; 8302: Display unit; 8303: Operation buttons; 8304: Fixing tool; 8305: Lens; 8306: Dial; 8400: Camera; 8401: Housing; 8402: Display unit; 8403: Operation buttons; 8404: Shutter button;8406: Lens; 8500: Viewfinder; 8501: Housing; 8502: Display unit; 8503: Button;

[0421] This application is based on Japanese Patent Application No. 2015-256583, filed with the Japan Patent Office on December 28, 2015, and Japanese Patent Application No. 2016-218998, filed with the Japan Patent Office on November 9, 2016, the entire contents of which are incorporated herein by reference.

Claims

1. A semiconductor device, wherein, The pixel unit includes a first transistor, a second transistor, a third transistor, and a light-emitting element. The first transistor has the function of controlling the supply of current from the current supply line to the light-emitting element according to a signal corresponding to the image data. The second transistor has the function of controlling the input of signals corresponding to the image data to the pixels. One of the source and drain of the third transistor is electrically connected to the wiring, and the other of the source and drain of the third transistor is electrically connected to the pixel electrode of the light-emitting element. in, A first conductive layer, which functions as a current supply line, and a second conductive layer, which functions as a signal line for inputting image data, are disposed on the same layer. The first conductive layer is electrically connected to one of the source and drain of the first transistor through a third conductive layer disposed below the first conductive layer. The fourth conductive layer, located below the first conductive layer, is electrically connected to another of the source and drain terminals of the first transistor. The fourth conductive layer is electrically connected to another of the source and drain terminals of the third transistor. A fifth conductive layer, which functions as the wiring, is disposed below the first conductive layer and the second conductive layer. The fifth conductive layer overlaps with the first conductive layer. The sixth conductive layer of the first transistor, which functions as a gate electrode, and the seventh conductive layer of the third transistor, which functions as a gate electrode, are disposed below the third conductive layer, the fourth conductive layer, and the fifth conductive layer. The sixth conductive layer is disposed above the channel region of the first transistor. The seventh conductive layer is disposed above the channel region of the third transistor. The fourth conductive layer is electrically connected to the pixel electrode. The thickness of the first insulating layer disposed below the sixth conductive layer is less than the thickness of the second insulating layer disposed below the channel region of the first transistor.

2. A semiconductor device, wherein, The pixel unit includes a first transistor, a second transistor, a third transistor, and a light-emitting element. The first transistor has the function of controlling the supply of current from the current supply line to the light-emitting element according to a signal corresponding to the image data. The second transistor has the function of controlling the input of signals corresponding to the image data to the pixels. One of the source and drain of the third transistor is electrically connected to the wiring, and the other of the source and drain of the third transistor is electrically connected to the pixel electrode of the light-emitting element. The second transistor and the third transistor each have a first gate electrode and a second gate electrode, and the second gate electrode of the second transistor is electrically connected to the second gate electrode of the third transistor. in, A first conductive layer, which functions as a current supply line, and a second conductive layer, which functions as a signal line for inputting image data, are disposed on the same layer. The first conductive layer is electrically connected to one of the source and drain of the first transistor through a third conductive layer disposed below the first conductive layer. The fourth conductive layer, located below the first conductive layer, is electrically connected to another of the source and drain terminals of the first transistor. The fourth conductive layer is electrically connected to another of the source and drain terminals of the third transistor. A fifth conductive layer, which functions as the wiring, is disposed below the first conductive layer and the second conductive layer. The fifth conductive layer overlaps with the first conductive layer. The sixth conductive layer of the first transistor, which functions as a gate electrode, and the seventh conductive layer of the third transistor, which functions as either the first or the second gate electrode, are disposed below the third, fourth, and fifth conductive layers. The sixth conductive layer is disposed above the channel region of the first transistor. The seventh conductive layer is disposed above the channel region of the third transistor. The fourth conductive layer is electrically connected to the pixel electrode. The thickness of the first insulating layer disposed below the sixth conductive layer is less than the thickness of the second insulating layer disposed below the channel region of the first transistor.

3. The semiconductor device according to claim 1 or claim 2, wherein, The seventh conductive layer overlaps with the first conductive layer.

4. The semiconductor device according to claim 1 or claim 2, wherein, The third conductive layer and the fourth conductive layer are disposed on the same layer.

5. The semiconductor device according to claim 1 or claim 2, wherein, The first conductive layer and the second conductive layer each have a first film containing titanium or titanium nitride, a second film containing aluminum on the first film, and a third film containing titanium or titanium nitride on the second film.

6. The semiconductor device according to claim 1 or claim 2, wherein, The channel region of the first transistor contains polycrystalline semiconductor.

7. A semiconductor device, wherein, The pixel unit includes a first transistor, a second transistor, a third transistor, and a light-emitting element. The first transistor has the function of controlling the supply of current from the current supply line to the light-emitting element according to a signal corresponding to the image data. The second transistor has the function of controlling the input of signals corresponding to the image data to the pixels. One of the source and drain of the third transistor is electrically connected to the wiring, and the other of the source and drain of the third transistor is electrically connected to the pixel electrode of the light-emitting element. in, The first conductive layer, which functions as a current supply line, is electrically connected to one of the source and drain of the first transistor via a second conductive layer disposed below the first conductive layer. The third conductive layer, located below the first conductive layer, is electrically connected to another of the source and drain terminals of the first transistor. The third conductive layer is electrically connected to the other of the source and drain terminals of the third transistor. A fourth conductive layer, which functions as the wiring, is disposed below the first conductive layer. The fourth conductive layer overlaps with the first conductive layer. The fifth conductive layer of the first transistor, which functions as a gate electrode, and the sixth conductive layer of the third transistor, which functions as a gate electrode, are disposed below the first insulating layer. The first insulating layer is disposed below the second conductive layer, the third conductive layer, and the fourth conductive layer. The fifth conductive layer is disposed above the channel region of the first transistor. The sixth conductive layer is disposed above the channel region of the third transistor. The third conductive layer is electrically connected to the pixel electrode. The thickness of the first insulating layer disposed below the fifth conductive layer is less than the thickness of the second insulating layer disposed below the channel region of the first transistor.

8. A semiconductor device, wherein, The pixel unit includes a first transistor, a second transistor, a third transistor, and a light-emitting element. The first transistor has the function of controlling the supply of current from the current supply line to the light-emitting element according to a signal corresponding to the image data. The second transistor has the function of controlling the input of signals corresponding to the image data to the pixels. One of the source and drain of the third transistor is electrically connected to the wiring, and the other of the source and drain of the third transistor is electrically connected to the pixel electrode of the light-emitting element. The second transistor and the third transistor each have a first gate electrode and a second gate electrode, and the second gate electrode of the second transistor is electrically connected to the second gate electrode of the third transistor. in, The first conductive layer, which functions as a current supply line, is electrically connected to one of the source and drain of the first transistor via a second conductive layer disposed below the first conductive layer. The third conductive layer, located below the first conductive layer, is electrically connected to another of the source and drain terminals of the first transistor. The third conductive layer is electrically connected to the other of the source and drain terminals of the third transistor. A fourth conductive layer, which functions as the wiring, is disposed below the first conductive layer. The fourth conductive layer overlaps with the first conductive layer. The fifth conductive layer of the first transistor, which functions as a gate electrode, and the sixth conductive layer of the third transistor, which functions as either the first gate electrode or the second gate electrode, are disposed below the first insulating layer. The first insulating layer is disposed below the second conductive layer, the third conductive layer, and the fourth conductive layer. The fifth conductive layer is disposed above the channel region of the first transistor. The sixth conductive layer is disposed above the channel region of the third transistor. The third conductive layer is electrically connected to the pixel electrode. The thickness of the first insulating layer disposed below the fifth conductive layer is less than the thickness of the second insulating layer disposed below the channel region of the first transistor.

9. The semiconductor device according to claim 7 or claim 8, wherein, The sixth conductive layer overlaps with the first conductive layer.

10. The semiconductor device according to claim 7 or claim 8, wherein, The second conductive layer and the third conductive layer are disposed on the same layer.

11. The semiconductor device according to claim 7 or claim 8, wherein, The first conductive layer has a first film containing titanium or titanium nitride, a second film containing aluminum on the first film, and a third film containing titanium or titanium nitride on the second film.

12. The semiconductor device according to claim 7 or claim 8, wherein, The channel region of the first transistor contains polycrystalline semiconductor.

13. A light-emitting device, wherein, The pixel unit includes a first transistor, a second transistor, a third transistor, a light-emitting element, and a capacitor. One of the source and drain of the first transistor is always connected to the current supply line, and the other of the source and drain of the first transistor is always connected to the pixel electrode of the light-emitting element. One of the source and drain of the second transistor is always connected to the signal line where the image data is input, and the other of the source and drain of the second transistor is always connected to the first gate electrode of the first transistor. One of the source and drain of the third transistor is always connected to the wiring, and the other of the source and drain of the third transistor is always connected to the pixel electrode of the light-emitting element. The capacitor element has the function of maintaining the voltage between the second gate electrode of the first transistor and the other of the source and drain electrodes of the first transistor. The first oxide semiconductor layer having a channel region of the first transistor is disposed above the first conductive layer of the first transistor, which functions as the first gate electrode. The second conductive layer of the first transistor, which functions as either a source or a drain, has a region that contacts the surface of the first oxide semiconductor layer. The third conductive layer of the first transistor, which functions as either the source or the drain, has a region that contacts the surface of the first oxide semiconductor layer. The fourth conductive layer of the first transistor, which functions as a second gate electrode, is disposed above the first oxide semiconductor layer. The first conductive layer functions as an electrode of the capacitor element. In the top view, the region in the first oxide semiconductor layer that overlaps with the fourth conductive layer is entirely overlapped with the first conductive layer. In the top view, the second conductive layer does not overlap with the first conductive layer. In the top view, the third conductive layer overlaps with the first conductive layer.

14. A light-emitting device, wherein, The pixel unit includes a first transistor, a second transistor, a third transistor, a light-emitting element, and a capacitor. One of the source and drain of the first transistor is always connected to the current supply line, and the other of the source and drain of the first transistor is always connected to the pixel electrode of the light-emitting element. One of the source and drain of the second transistor is always connected to the signal line where the image data is input, and the other of the source and drain of the second transistor is always connected to the first gate electrode of the first transistor. One of the source and drain of the third transistor is always connected to the wiring, and the other of the source and drain of the third transistor is always connected to the pixel electrode of the light-emitting element. The capacitor element has the function of maintaining the voltage between the second gate electrode of the first transistor and the other of the source and drain electrodes of the first transistor. The first oxide semiconductor layer having a channel region of the first transistor is disposed above the first conductive layer of the first transistor, which functions as the first gate electrode. The second conductive layer of the first transistor, which functions as either a source or a drain, has a region that contacts the surface of the first oxide semiconductor layer. The third conductive layer of the first transistor, which functions as either the source or the drain, has a region that contacts the surface of the first oxide semiconductor layer. The fourth conductive layer of the first transistor, which functions as a second gate electrode, is disposed above the first oxide semiconductor layer. The fifth conductive layer of the second transistor, which functions as either a source or a drain, has a region that contacts the surface of the second oxide semiconductor layer having a channel region. The sixth conductive layer of the second transistor, which functions as either the source or the drain, has a region that contacts the surface of the second oxide semiconductor layer. The seventh conductive layer of the third transistor, which functions as either a source or a drain, has a region that contacts the surface of the third oxide semiconductor layer having a channel region. The eighth conductive layer, which functions as the current supply line, is always connected to the second conductive layer. The ninth conductive layer, which functions as the signal line, is always connected to the fifth conductive layer. The second conductive layer, the third conductive layer, the fifth conductive layer, and the sixth conductive layer are disposed on the same layer. The eighth conductive layer and the ninth conductive layer are disposed on the same layer. The second conductive layer, the third conductive layer, the fifth conductive layer, and the sixth conductive layer are disposed on different layers from the eighth conductive layer and the ninth conductive layer. The first conductive layer functions as an electrode of the capacitor element. In the top view, the region in the first oxide semiconductor layer that overlaps with the fourth conductive layer is entirely overlapped with the first conductive layer. In the top view, the second conductive layer does not overlap with the first conductive layer. In the top view, the third conductive layer overlaps with the first conductive layer.

15. The light-emitting device according to claim 14, wherein, The seventh conductive layer serves as the wiring layer.

16. The light-emitting device according to claim 13 or claim 14, wherein, The third conductive layer is always in contact with the pixel electrode through an opening in the insulating layer on the third conductive layer. In the top view, the opening overlaps with the first conductive layer.

17. The light-emitting device according to claim 13 or claim 14, wherein, The first conductive layer and the second conductive layer each have a first film containing titanium and a second film containing copper on the first film.

Images