A method for preparing flexible organic semiconductor nanowires

Abstract

The present invention provides a method for preparing flexible organic semiconductor nanowires, the preparation method comprising the following steps: S1) mixing a certain mass of organic semiconductor material with an elastomer and a solvent to obtain a blended solution; S2) covering a mask plate on the surface of a substrate, performing surface modification on the substrate by etching, and forming a groove on the substrate; S3) fixing the substrate on one side of a rotating table, dripping the blended solution on the substrate, and turning on the rotating table, and the solution solidifies along the substrate groove to form a nanowire. Using the blended solution of an organic semiconductor and an elastomer, during the centrifugal spin coating process, the semiconductor material forms a phase-separated continuous network inside the elastomer, and simultaneously solidifies in the substrate groove to form a nanowire, so that an organic semiconductor nanowire with a narrow width, a long length, high flexibility and tensile resistance, and high carrier mobility can be efficiently prepared.

Description

Technical Field

[0001] The invention relates to the field of organic semiconductors, and in particular to a method for preparing flexible organic semiconductor nanowires. Background Art

[0002] With the increasing innovation of modern wearable devices, semiconductor materials are developing in the direction of lightweight and flexible foldable and stretchable. Currently, most commercial flexible semiconductor materials use inorganic materials (such as silicon) as the electrical active layer, flexible polymers as the substrate, and mechanical control (such as hinges) to maintain material stability, but the deformation degree of similar materials is still not high. After a large deformation, their mechanical and electrical properties have decreased to varying degrees. Organic semiconductor materials as electrical active layers have the advantages of light weight, insulation, high strength, heat resistance, corrosion resistance, good elasticity, and good ductility. Organic polymer compounds with different structures and molecular weights can also be derived into a variety of uses to meet the different needs of different industries. Organic semiconductor materials can be prepared as nanowires and used as substrates to prepare semiconductor devices. However, the current preparation technology for organic semiconductor nanowires is still imperfect, the prepared wire length is short, the continuous preparation capability is weak, and the flexibility and tensile resistance are not strong. Summary of the invention

[0003] In order to solve the problems of imperfect preparation technology of organic semiconductor nanowires in the prior art, short length of prepared wires, weak continuous preparation capability, weak flexibility and tensile strength, etc., the present invention provides a method for preparing flexible organic semiconductor nanowires.

[0004] In order to achieve the above-mentioned purpose, the present invention adopts the following technical solutions:

[0005] In a first aspect, the present invention provides a method for preparing flexible organic semiconductor nanowires, the preparation method comprising the following steps: S1) mixing a certain mass of organic semiconductor material with an elastomer and a solvent to obtain a blended solution; S2) covering a surface of a substrate with a mask plate, modifying the surface of the substrate by etching, and forming grooves on the substrate; S3) fixing the substrate on one side of a rotating table, dripping the blended solution on the substrate, and turning on the rotating table, so that the solution solidifies along the grooves of the substrate to form nanowires.

[0006] Furthermore, in S1, the organic semiconductor material is selected from conjugated polymer semiconductor materials, and the conjugated polymer semiconductor material includes at least one conjugated structural unit and a plasticizer compound having a straight-chain or branched aliphatic hydrocarbon group dispersed in a polymer network, and the conjugated structural unit includes at least one long-chain structural unit, and the side chain is a straight-chain or branched aliphatic hydrocarbon group.

[0007] Furthermore, the organic semiconductor material includes one or more of polyacetylene semiconductor materials, polyphenyl semiconductor materials, polythiophene semiconductor materials, polyaniline semiconductor materials, and polypyrrole semiconductor materials.

[0008] Furthermore, in S1, the elastomer is selected from one or more of polydimethylsiloxane, polycyclomethylsiloxane, polymethylphenylsiloxane, ethylene-butylene copolymer, and styrene-butylene copolymer; and the solvent is selected from one or more of toluene, chlorobenzene, dichlorobenzene, chloroform, dichloromethane, monochloromethane, acetone, ether, and ethyl acetate.

[0009] Furthermore, in S1, the mass ratio of the organic semiconductor material to the elastomer is 1:10 to 10:1; and the concentration of the organic semiconductor material in the solvent is 0.1 to 50 mg / mL.

[0010] Furthermore, in S2, the mask plate contains a long strip of slits, the width of the slits is 50 to 2000 nm, and the length is 1 μm to 1 mm.

[0011] Further, in S2, the substrate is selected from a glass substrate, a silicon wafer substrate, an ITO glass substrate, an FTO glass substrate or a flexible polyethylene naphthalate, polyethylene terephthalate, or a polyimide substrate; preferably a silicon wafer substrate; more preferably, the silicon wafer substrate is treated with a silicon surface modifier, and the silicon surface modifier is selected from one or more of perfluorooctyltriethoxysilane, perfluorodecyltrichlorosilane, tetrahydrooctylmethyldichlorosilane, and octadecyltrichlorosilane.

[0012] Further, in S2, in S2, the etching method is selected from plasma etching, electron beam etching or laser etching; preferably plasma etching.

[0013] Furthermore, in S3, the rotation speed of the rotating table is 200-5000 r / min, the rotation time is 10 s-5 min, the temperature of the rotating table is 0-70° C.; and the distance from the fixed point of the substrate to the rotation center is 0.5-10 cm.

[0014] Furthermore, the curing time is 10s to 5min, and the temperature is 0 to 70°C.

[0015] Furthermore, the method for preparing the organic semiconductor nanowires also includes: S4) after the rotating table stops, the elastic carrier is turned upside down on the substrate and the prepared organic semiconductor nanowires are adhered; preferably, the elastic carrier is one or more of polydimethylsiloxane, ethylene-butylene copolymer, and styrene-butylene copolymer.

[0016] By applying the technical solution of the present invention, compared with the prior art, the present invention has the following beneficial effects:

[0017] The present invention proposes a method based on centrifugal groove spin coating of an organic semiconductor blend solution. A blend solution of an organic semiconductor and an elastomer is used. During the centrifugal spin coating process, the semiconductor material forms a phase-separated continuous network inside the elastomer, and simultaneously forms nanowires in the grooves of a substrate. Organic semiconductor nanowires with narrow width, long length, high flexibility, tensile resistance, and high carrier mobility can be efficiently prepared. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 It is a schematic diagram of the structure of the preparation equipment of the organic semiconductor nanowires of the present invention;

[0019] The reference numerals are: 10 is a high-speed rotating table, 11 is a rotating shaft, 12 is a silicon substrate, and 13 is a solution dropper. DETAILED DESCRIPTION

[0020] It should be noted that, in the case of no conflict, the embodiments in the present application and the features in the embodiments can be combined with each other. The present invention will be described in detail below in conjunction with the embodiments. In this article, the relational terms such as the first and second, etc. are only used to distinguish an entity or operation from another entity or operation, and do not necessarily require or imply that there is any such actual relationship or order between these entities or operations. Moreover, the term "comprise", "comprising" or any other variant thereof is intended to cover non-exclusive inclusion, so that the process, method, article or equipment including a series of elements not only include those elements, but also include other elements not clearly listed, or also include elements inherent to such process, method, article or equipment. In the absence of more restrictions, the elements limited by the sentence "comprise one ..." do not exclude that there are other identical elements in the process, method, article or equipment including the elements.

[0021] In order to enable those skilled in the art to better understand the solutions of the present invention, the technical solutions in the embodiments of the present invention are described clearly and completely below. Obviously, the described embodiments are only embodiments of a part of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work should fall within the scope of protection of the present invention.

[0022] Unless otherwise defined, technical or scientific terms used in the present disclosure shall have the common meanings understood by one of ordinary skill in the art to which the present invention belongs.

[0023] Organic semiconductor materials as electrically active layers have the advantages of light weight, insulation, high strength, heat resistance, corrosion resistance, good elasticity, and good ductility. Organic polymer compounds with different structures and molecular weights can also be derived into a variety of uses to meet the different needs of different industries. Organic semiconductor materials can be prepared into nanowires and used as substrates to prepare semiconductor devices. However, the current preparation technology for organic semiconductor nanowires is still imperfect, the prepared wires are short, the continuous preparation capability is weak, and the flexibility and tensile strength are not strong.

[0024] To solve this problem, Figure 1 1 is a schematic diagram of the structure of the preparation equipment of the organic semiconductor nanowires of the present invention. The preparation equipment includes a high-speed rotating table 10, a rotating shaft 11, a silicon substrate 12 and a solution dropper 13. The preparation equipment will not be described in detail.

[0025] The present application provides a method for preparing flexible organic semiconductor nanowires.

[0026] In a typical embodiment of the present application, in the first aspect, the present invention provides a method for preparing flexible organic semiconductor nanowires, the preparation method comprising the following steps: S1) mixing a certain mass of organic semiconductor material with an elastomer and a solvent to obtain a blended solution; S2) covering the surface of a substrate with a mask plate, modifying the surface of the substrate by etching, and forming grooves on the substrate; S3) fixing the substrate on one side of a rotating table, dripping the blended solution on the substrate, and turning on the rotating table, and the solution solidifies along the grooves of the substrate to form nanowires.

[0027] In a specific embodiment, in S1, the organic semiconductor material is selected from conjugated polymer semiconductor materials, and the conjugated polymer semiconductor material includes at least one conjugated structural unit and a plasticizer compound having a straight or branched aliphatic hydrocarbon group dispersed in a polymer network, and the conjugated structural unit includes at least one long-chain structural unit, and the side chain is a straight or branched aliphatic hydrocarbon group. Conjugated polymers refer to polymers in which the carbon-carbon bonds of the polymer skeleton are alternately connected by single bonds and double bonds. Conjugated polymers include helical conjugated polymers that take a helical structure in a stable state (a state where no external force is applied), and straight-chain conjugated polymers that do not take a helical structure and stretch straight in a stable state, and any of them can be used in the present invention.

[0028] In a specific embodiment, the organic semiconductor material includes one or more of polyacetylene semiconductor materials, polyphenyl semiconductor materials, polythiophene semiconductor materials, polyaniline semiconductor materials, and polypyrrole semiconductor materials.

[0029] Polyacetylene consists of a conjugated structure with alternating single and double bonds. Due to the irreversible nature of the double bonds, each structural unit of polyacetylene has two structures: cis and trans.

[0030] The polythiophene semiconductor material refers to a polymer having a polythiophene skeleton, including a polymer having a side chain structure. Specifically, poly-3-alkylthiophenes such as poly-3-methylthiophene, poly-3-butylthiophene, poly-3-hexylthiophene, poly-3-octylthiophene, and poly-3-decylthiophene, poly-3-methoxythiophene, poly-3-ethoxythiophene, and poly-3-dodecyloxythiophene, and poly-3-alkoxythiophenes such as poly-3-methoxy-4-methylthiophene and poly-3-dodecyloxy-4-methylthiophene can be cited.

[0031] Polyaniline is a polymer compound with special electrical and optical properties. It can have electrical conductivity and electrochemical properties after doping. The electrical activity of polyaniline comes from the P electron conjugated structure in the molecular chain: as the P electron system in the molecular chain expands, the P bonding state and the P* anti-bonding state form the valence band and the conduction band respectively. This non-localized P electron conjugated structure can form P-type and N-type conductive states after doping. Different from the doping mechanism of other conductive polymers that produce cationic vacancies under the action of oxidants, the number of electrons in the doping process of polyaniline does not change. Instead, the doped proton acid decomposes to produce H+ and anions (such as Cl-, sulfate, phosphate, etc.) that enter the main chain and combine with the N atoms in the amine and imine groups to form polar and dipole delocalized to the P bonds of the entire molecular chain, thereby making polyaniline exhibit higher conductivity. This unique doping mechanism makes the doping and dedoping of polyaniline completely reversible. The doping degree is affected by factors such as pH value and potential, and is manifested as a corresponding change in the appearance color. Therefore, polyaniline has electrochemical activity and electrochromic properties.

[0032] Polypyrrole is a heterocyclic conjugated conductive polymer with a conjugated chain oxidation and corresponding anion doping structure. Its conductivity can reach 102-103S / cm, its tensile strength can reach 50-100MPa, and it has good electrochemical oxidation-reduction reversibility.

[0033] In a specific embodiment, in S1, the elastomer is selected from one or more of polydimethylsiloxane, polycyclomethylsiloxane, polymethylphenylsiloxane, ethylene-butylene copolymer, and styrene-butylene copolymer; the above-mentioned elastomeric materials have good tensile properties and good compatibility with conjugated polymer semiconductor materials in solvents; during the curing process, these materials can phase separate from the conjugated polymer semiconductor materials and form a network structure.

[0034] Specifically, the solvent is selected from one or more of toluene, chlorobenzene, dichlorobenzene, chloroform, dichloromethane, monochloromethane, acetone, ether, and ethyl acetate.

[0035] In a preferred embodiment of the present application, in S1, the mass ratio of the organic semiconductor material to the elastomer is 1:10 to 10:1; the concentration of the organic semiconductor material to the solvent is 0.1 to 50 mg / mL. If the mass ratio of the organic semiconductor material to the elastomer is lower than 1:10, it is difficult for the obtained organic semiconductor material to form a conjugated polymer network structure, resulting in a significant decrease in electrical properties; if the mass ratio of the organic semiconductor material to the elastomer is higher than 10:1, the elastomer content of the obtained organic semiconductor material is too low, and the flexibility and tensile strength are significantly reduced.

[0036] In a preferred embodiment of the present application, in S2, the mask contains a long slit, the width of the slit is 50 to 2000 nm, and the length is 1 μm to 5 mm. If the width of the slit is not within this range, and is less than 50 nm, it is difficult for ordinary etching equipment to do it; if the length of the slit is not within this range, the length is too short, which is not conducive to later reprocessing, and the length is too long, which is not conducive to removing the nanowires from the substrate.

[0037] In an embodiment of the present application, in S2, the substrate is selected from a glass substrate, a silicon wafer substrate, an ITO glass substrate, an FTO glass substrate or a flexible polyethylene naphthalate, polyethylene terephthalate, or polyimide substrate; preferably a silicon wafer substrate.

[0038] In a preferred embodiment of the present application, the silicon wafer substrate is treated with a silicon surface modifier, and the silicon surface modifier is selected from one or more of perfluorooctyltriethoxysilane, perfluorodecyltrichlorosilane, tetrahydrooctylmethyldichlorosilane, and octadecyltrichlorosilane. The silicon wafer substrate is treated with a silicon surface modifier to facilitate the removal of the nanowires from the substrate.

[0039] In the embodiment of the present application, in S2, the etching method is selected from plasma etching, electron beam etching or laser etching; plasma etching is preferred. Plasma etching is the most common form of dry etching. Its principle is that the gas exposed to the electron area forms plasma, and the ionized gas and the gas composed of released high-energy electrons are generated, thereby forming plasma or ions. When the ionized gas atoms are accelerated by the electric field, they will release enough force to tightly bond the material or etch the surface with the surface expulsion force.

[0040] In a preferred embodiment of the present application, the groove has a length of 10 μm and a width of 100 nm.

[0041] In a specific embodiment of the present application, in S3, the rotation speed of the rotating table is 200-5000r / min, the rotation time is 10s-5min, and the temperature of the rotating table is 0-70°C; the distance between the fixed position of the substrate and the rotation center is 0.5-10cm, the curing time is 10s-5min, and the temperature is 0-70°C. If the rotation speed of the rotating table is lower than 200r / min, the thickness is too thick, and the mechanical and electrical properties are reduced; if the rotation speed of the rotating table is higher than 5000r / min, the thickness is too thin, and the mechanical and electrical properties are very poor. If the rotation time of the rotating table is lower than 10s, the solution cannot be dried and nanowires cannot be formed; if the rotation time of the rotating table is higher than 5min, the solvent has already been dried at this time, and the processing time is extended. If the temperature of the rotating table is not within the range of 0-70°C, the temperature is too low, the solution cannot be dried thoroughly, and it is difficult to form nanowires. Too high a temperature will cause the solvent to dry too quickly, the thickness is too thick, and the electrical and mechanical properties are affected, and dewetting is prone to occur, and the nanowires are prone to breakage. If the distance between the fixed point of the substrate and the rotation center is less than 0.5 cm, it is difficult to prepare nanowires by centrifugal force; if the distance between the fixed point of the substrate and the rotation center is greater than 10 cm, the solution is easily over-dried, resulting in the nanowires being too thin.

[0042] In an embodiment of the present application, the method for preparing the organic semiconductor nanowires further includes: S4) after the rotating table stops, the elastic carrier is turned upside down on the substrate and the prepared organic semiconductor nanowires are adhered; preferably, the elastic carrier is one or more of polydimethylsiloxane, ethylene-butylene copolymer, and styrene-butylene copolymer.

[0043] The present application is further described in detail below in conjunction with specific embodiments. These embodiments should not be construed as limiting the scope of protection claimed in the present application.

[0044] Example 1

[0045] The organic semiconductor material poly(3-hexylthiophene) and the elastomer poly(dimethylsiloxane) were dissolved in a chloroform solution in a mass ratio of 3:7 to prepare a blended solution, wherein the concentration of the organic semiconductor material in chloroform was 20 mg / mL. A mask containing a slit with a width of 500 nm and a length of 10 μm was covered on the surface of a silicon wafer, a silicon wafer substrate was etched using plasma to form a groove, and the silicon substrate was surface modified using perfluorooctyl triethoxysilane; the substrate was fixed on a high-speed rotating table 1 cm away from the center of rotation, and the rotating table was turned on at a speed of 3000 r / min and a temperature of 40°C after the solution was dripped on the substrate, and the rotating table was turned on at a speed of 3000 r / min and a temperature of 40°C, and the rotation was continued for 60 seconds, and the solution was cured along the groove of the substrate by centrifugal force to form nanowires, and the curing time was 3 min and the temperature was 50°C; after the rotating table stopped, a piece of polydimethylsiloxane elastomer was turned upside down on the substrate and the prepared organic semiconductor nanowires were adhered.

[0046] Example 2

[0047] The difference from Example 1 is that the mass ratio of the organic semiconductor material poly(3-hexylthiophene) to the elastomer polydimethylsiloxane is 2:8, and the rest is the same as Example 1.

[0048] Example 3

[0049] The difference from Example 1 is that the mass ratio of the organic semiconductor material poly(3-hexylthiophene) to the elastomer polydimethylsiloxane is 1:9, and the rest is the same as Example 1.

[0050] Example 4

[0051] The difference from Example 1 is that the mass ratio of the organic semiconductor material poly (3-hexylthiophene) to the elastomer polydimethylsiloxane is 4:6, and the rest is the same as Example 1.

[0052] Example 5

[0053] The difference from the first embodiment is that the slit width is 50 nm and the length is 100 μm. The other aspects are the same as the first embodiment.

[0054] Example 6

[0055] The difference from the first embodiment is that the slit width is 50 nm and the length is 500 μm. The other aspects are the same as the first embodiment.

[0056] Example 7

[0057] The difference from the first embodiment is that the slit width is 500 nm and the length is 500 μm. The other aspects are the same as the first embodiment.

[0058] Example 8

[0059] The difference from the first embodiment is that the slit width is 2000 nm and the length is 500 μm. The other aspects are the same as the first embodiment.

[0060] Example 9

[0061] The difference from the first embodiment is that the slit width is 2000 nm and the length is 10 μm. The other aspects are the same as the first embodiment.

[0062] Example 10

[0063] The difference from Example 1 is that after the solution is dripped onto the substrate, the rotating table is turned on at a rotation speed of 2000 rpm and a temperature of 50° C., and the rotation is continued for 90 seconds. The rest is the same as Example 1.

[0064] Embodiment 11

[0065] The difference from Example 1 is that after the solution is dripped onto the substrate, the rotating table is turned on at a speed of 200 r / min and a temperature of 50° C., and the rotation is continued for 5 minutes. The rest is the same as Example 1.

[0066] Example 12

[0067] The difference from Example 1 is that after the solution is dripped onto the substrate, the rotating table is turned on at a speed of 5000 r / min and a temperature of 50° C., and the rotation is continued for 30 seconds. The rest is the same as Example 1.

[0068] Embodiment 13

[0069] The difference from Example 1 is that the distance between the base fixing point and the rotation center is 10 cm. The rest is the same as Example 1.

[0070] Embodiment 14

[0071] The difference from Example 1 is that the distance between the base fixing point and the rotation center is 5 cm. The rest is the same as Example 1.

[0072] Embodiment 15

[0073] The difference from Example 1 is that the mass ratio of the organic semiconductor material poly-2-butylthieno[3,2-b]thiophene and the elastomer styrene-butylene copolymer is 3:7. The rest is the same as Example 1.

[0074] Example 16

[0075] The difference from Example 1 is that the mass ratio of the organic semiconductor material polypyrrolopyrrole diketoacetate and the elastomer polymethylphenylsiloxane is 3:7. The rest is the same as Example 1.

[0076] Embodiment 17

[0077] The difference from Example 1 is that the concentration of the organic semiconductor material in chloroform is 0.1 mg / mL. The other aspects are the same as Example 1.

[0078] Embodiment 18

[0079] The difference from Example 1 is that the concentration of the organic semiconductor material in chloroform is 50 mg / mL. The other aspects are the same as Example 1.

[0080] Comparative Example 1

[0081] The difference from Example 1 is that the mass ratio of the organic semiconductor material poly(3-hexylthiophene) to the elastomer poly(dimethylsiloxane) is 1:12. The rest is the same as Example 1.

[0082] Comparative Example 2

[0083] The difference from Example 1 is that the mass ratio of the organic semiconductor material poly(3-hexylthiophene) to the elastomer poly(dimethylsiloxane) is 12:1. The rest is the same as Example 1.

[0084] Comparative Example 3

[0085] The difference from Example 1 is that the slit width is 20 nm and the length is 5 mm. The other features are the same as those in Example 1.

[0086] Comparative Example 4

[0087] The difference from Example 1 is that the distance between the base fixing point and the rotation center is 0.2 cm. The rest is the same as Example 1.

[0088] Comparative Example 5

[0089] The difference from Example 1 is that the distance between the base fixing point and the rotation center is 12 cm. The rest is the same as Example 1.

[0090] Performance Testing

[0091] Carrier mobility: Mobility reflects the speed of carrier movement and is the most important performance parameter of organic semiconductor materials. The mobility of organic semiconductor materials can be obtained by preparing organic field effect transistors and testing their electrical properties. The transfer curve of the organic field effect transistor is measured by applying a scanning voltage to the gate of the transistor and a constant voltage between the source and drain, from which the mobility, threshold voltage, and switching ratio information of the organic semiconductor material can be obtained. By applying a step-like voltage to the gate of the transistor and a scanning voltage between the source and drain, the output curve of the OFET can be obtained. According to the output curve, when VD is small, the contact resistance of the device is calculated using Ohm's law according to the slope relationship between VD and ID. According to the obtained transfer curve, the source-drain current is squared to obtain the relationship curve between ID1 / 2 and VG. The slope of the straight line segment in the relationship curve is taken and substituted into formula (1) to calculate the mobility data.

[0092]

[0093] (2) Elongation at break: A film with a length of 50 mm and a width of 10 mm was floated on the water surface. A linear telescopic stage with a PDMS sheet on the bottom was attached to both ends of the film. A stepper motor was used to apply a traction stretch of 10 mm / min to the film. During the entire stretching process, a camera was placed directly above the film to record the film in real time and measure its length. When the film broke, the ratio of the stretched length to its original length was its elongation at break.

[0094] The test results of Examples 1-18 and Comparative Examples 1-5 are as follows:

[0095]

[0096]

[0097] From the above description, it can be seen that the above embodiments of the present invention achieve the following technical effects: 1. The embodiments of the present invention improve the carrier mobility of organic semiconductor nanowires; 2. Improve the tensile strength of organic semiconductor nanowires, that is, the maximum tensile range that can be sustained before its electrical performance decays to 10-7cm2 / V-1 / s-1. If the mass ratio of the organic semiconductor material to the elastomer is lower than 1:10, the obtained organic semiconductor material is difficult to form a conjugated polymer network structure, resulting in a significant decrease in electrical performance; if the mass ratio of the organic semiconductor material to the elastomer is higher than 10:1, the elastomer content of the obtained organic semiconductor material is too low, and the flexibility and tensile strength are greatly reduced.

[0098] The above embodiments are only used to help understand the method of the present invention and its core concept. It should be noted that, for those skilled in the art, without departing from the principles of the present invention, several improvements and modifications may be made to the present invention, and these improvements and modifications also fall within the scope of protection of the claims of the present invention.

Claims

1. A method for preparing flexible organic semiconductor nanowires, characterized in that: The preparation method comprises the following steps: S1) mixing a certain mass of organic semiconductor material, an elastomer and a solvent to obtain a blend solution; S2) covering the surface of the substrate with a mask, modifying the surface of the substrate by etching, and forming a groove on the substrate; S3) fixing the substrate on one side of a rotating table, dripping the blended solution onto the substrate, and then turning on the rotating table, so that the solution solidifies along the grooves of the substrate to form nanowires.

2. The method for preparing flexible organic semiconductor nanowires according to claim 1, characterized in that: In S1, the organic semiconductor material is selected from conjugated polymer semiconductor materials, and the conjugated polymer semiconductor material includes at least one conjugated structural unit and a plasticizer compound having a straight-chain or branched aliphatic hydrocarbon group dispersed in a polymer network, and the conjugated structural unit includes at least one long-chain structural unit, and the side chain is a straight-chain or branched aliphatic hydrocarbon group.

3. The method for preparing flexible organic semiconductor nanowires according to claim 1 or 2, characterized in that: The organic semiconductor material includes one or more of polyacetylene semiconductor materials, polyphenyl semiconductor materials, polythiophene semiconductor materials, polyaniline semiconductor materials, and polypyrrole semiconductor materials.

4. The method for preparing flexible organic semiconductor nanowires according to claim 1, characterized in that: In S1, the elastomer is selected from one or more of polydimethylsiloxane, polycyclomethylsiloxane, polymethylphenylsiloxane, ethylene-butylene copolymer, and styrene-butylene copolymer; the solvent is selected from one or more of toluene, chlorobenzene, dichlorobenzene, chloroform, dichloromethane, monochloromethane, acetone, ether, and ethyl acetate.

5. The method for preparing flexible organic semiconductor nanowires according to claim 1, characterized in that: In S1, the mass ratio of the organic semiconductor material to the elastomer is 1:10 to 10:1; and the concentration of the organic semiconductor material in the solvent is 0.1 to 50 mg / mL.

6. The method for preparing flexible organic semiconductor nanowires according to claim 1, characterized in that: In S2, the mask plate contains long strip-shaped slits, and the width of the slits is 50 to 2000 nm and the length is 1 μm to 1 mm.

7. The method for preparing flexible organic semiconductor nanowires according to claim 1, characterized in that: In S2, the substrate is selected from a glass substrate, a silicon wafer substrate, an ITO glass substrate, an FTO glass substrate or a flexible polyethylene naphthalate, polyethylene terephthalate, or polyimide substrate; The silicon wafer substrate is treated with a silicon surface modifier, and the silicon surface modifier is selected from one or more of perfluorooctyltriethoxysilane, perfluorodecyltrichlorosilane, tetrahydrooctylmethyldichlorosilane, and octadecyltrichlorosilane.

8. The method for preparing flexible organic semiconductor nanowires according to claim 1, characterized in that: In S2, the etching method is selected from plasma etching, electron beam etching or laser etching.

9. The method for preparing flexible organic semiconductor nanowires according to claim 1, characterized in that: In S3, the rotation speed of the rotating table is 200-5000 r / min, the rotation time is 10s-5min, and the temperature of the rotating table is 0-70°C; the distance between the fixed point of the substrate and the rotation center is 0.5-10cm; the curing time is 10s-5min, and the temperature is 0-70°C.

10. The method for preparing flexible organic semiconductor nanowires according to claim 1, characterized in that: The method for preparing organic semiconductor nanowires also includes: S4) after the rotating table stops, the elastic carrier is turned upside down on the substrate and the prepared organic semiconductor nanowires are adhered thereto; the elastic carrier is one or more of polydimethylsiloxane, ethylene-butylene copolymer, and styrene-butylene copolymer.

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