A circuit arrangement and method for ultra-wideband optical signal probing and amplification

Abstract

The application discloses a kind of circuit device and method for ultra-wideband optical signal detection and amplification, belong to photoelectric signal detection and processing technical field, including optical detection conversion unit, for detecting optical signal and the optical signal detected is converted into electrical signal;DC high-frequency separation unit, for separating electrical signal into DC signal and high-frequency signal;Current-voltage conversion and DC voltage amplification unit, for converting DC signal into DC voltage signal and amplifying the DC voltage signal converted;DC drive unit;High-frequency amplification unit, for amplifying high-frequency signal;DC high-frequency combination unit, for the DC voltage signal amplified after current and the amplified high-frequency signal are synthesized and output;High-frequency amplification unit is the radio frequency amplifier or microwave amplifier prepared using gallium arsenide process.It can detect and amplify from DC to 20GHz optical modulation signal.A kind of method for ultra-wideband optical signal detection and amplification is also disclosed.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of photoelectric signal detection and processing, and in particular to a circuit device and method for ultra-wideband optical signal detection and amplification. BACKGROUND

[0002] With the continuous development of optical communication, optical transmission, microwave photonics, optical fiber sensing and other technologies, optical signal detection and processing is an important and widely used technology in the field of optoelectronics, especially in some high-speed, high-bandwidth pulse signal transmission and synchronization systems, the transmission quality of optical modulation signals is required to be very high, especially in the optical detection at the receiving end, not only the weak optical modulation signal needs to be detected, but also the speed and bandwidth of the optical detection and processing circuit (amplification) of the optical detection part are also increasing. First, the weak optical signal needs to be optoelectronic detected with a large bandwidth, and the optical signal is converted into an electrical signal with as little distortion as possible, because the modulated optical signal has both DC components and very high frequency components, and the full frequency domain needs to be restored from DC to high frequency during transmission, and the distortion needs to be small. In addition, due to the weak signal, the converted electrical signal also needs to be amplified synchronously with as little distortion as possible in the full frequency domain including DC components to achieve the ideal amplitude. Therefore, the amplification circuit of the electrical signal is also crucial for the restoration and amplification of high-speed and ultra-wideband signals. Ultra-wideband here is defined as a frequency range from DC to 20GHz.

[0003] The conventional optical detection technology generally uses APD (avalanche photodiode type photodetector) detector for photoelectric conversion, uses the avalanche effect of APD to obtain high gain amplification, and the subsequent amplification processing is generally a simple amplification based on a BJT transistor operational amplifier. The conventional technology has several problems: 1. The signal modulation bandwidth of APD is narrow, generally below GHz, and cannot reach the level of 10GHz, 20GHz and above high bandwidth; 2. The price of APD is high; 3. The operational amplifier used is limited by the silicon material process, and the bandwidth is limited, and is generally in the hundreds of megahertz level, which is difficult to meet the requirements of high-speed and high-bandwidth amplification up to 20GHz. Some existing technologies also use PIN detectors for photoelectric conversion, but are also limited by the subsequent operational amplifier circuit, and are difficult to meet the requirements of high-speed and high-bandwidth up to 20GHz. The conventional technology generally amplifies the signal through a BJT transistor type operational amplifier, which can amplify DC and low frequency (below several hundred megahertz), but is powerless for high frequency, which greatly limits the range of use.

[0004] Therefore, it is desirable to seek a technical solution to at least alleviate the above problems. SUMMARY

[0005] The present application aims to provide a circuit device and method for ultra-wideband optical signal detection and amplification, which can realize detection and amplification of ultra-wideband weak light modulation signals from direct current to 20GHz, and achieve the purpose of restoring and amplifying useful signals as much as possible without distortion.

[0006] The present application is realized by the following technical solutions:

[0007] A circuit device for ultra-wideband optical signal detection and amplification comprises:

[0008] An optical detection conversion unit for detecting an optical signal and converting the detected optical signal into an electrical signal;

[0009] A direct current-high frequency separation unit for separating the electrical signal into a direct current signal and a high frequency signal;

[0010] A current-to-voltage and direct current voltage amplification unit for converting the direct current signal into a direct current voltage signal and amplifying the converted direct current voltage signal;

[0011] A direct current driving unit for amplifying the driving current of the amplified direct current voltage signal;

[0012] A high frequency amplification unit for amplifying the high frequency signal;

[0013] A direct current-high frequency combination unit for combining and outputting the current-amplified direct current voltage signal and the amplified high frequency signal;

[0014] The high frequency amplification unit is a radio frequency amplifier or a microwave amplifier prepared by using a gallium arsenide process.

[0015] The optical detection conversion unit comprises a PIN optical detection chip, a first capacitor, an optical input port, an electrical signal output port, a positive electrode of a power supply input port, and a ground terminal. The PIN optical detection chip comprises a photodiode, a first resistor, and a second resistor. The positive electrode of the photodiode is electrically connected to the electrical signal output port. One end of the first resistor is electrically connected to the positive electrode of the photodiode. The other end of the first resistor is electrically connected to the ground terminal. One end of the second resistor is electrically connected to the negative electrode of the photodiode. The other end of the second resistor is electrically connected to the positive electrode of the power supply input port. One end of the first capacitor is electrically connected to the positive electrode of the power supply input port. The other end of the first capacitor is electrically connected to the ground terminal.

[0016] The direct current high frequency combination unit comprises a third inductor, a fourth capacitor, an amplified high frequency signal input port, a current-amplified direct current voltage signal input port and a combination signal output port.

[0017] The light detection conversion unit is a PIN type photoelectric detector.

[0018] The direct current amplification unit comprises:

[0019] A current detection chip or a differential amplification circuit is used to convert the direct current signal into a direct current voltage signal.

[0020] An operational amplification circuit is used to amplify the converted direct current voltage signal.

[0021] The operational amplification circuit is a gain-adjustable operational amplification circuit.

[0022] A method for ultra-wideband light signal detection and amplification comprises the following steps:

[0023] Step 1: detecting a light signal and converting the detected light signal into an electric signal;

[0024] Step 2: separating the electric signal into a direct current signal and a high frequency signal;

[0025] Step 3: converting the direct current signal into a direct current voltage signal and amplifying the converted direct current voltage signal;

[0026] Step 4: amplifying the driving current of the amplified direct current voltage signal;

[0027] Step 5: amplifying the high frequency signal by using a radio frequency amplifier or a microwave amplifier prepared by using a gallium arsenide process;

[0028] Step 6: combining and outputting the current-amplified direct current voltage signal and the amplified high frequency signal.

[0029] In step 1, the optical detection and conversion unit for detecting the optical signal and converting the detected optical signal into an electrical signal comprises a PIN optical detection chip, a first capacitor, an optical input port, an electrical signal output port, a power supply input port positive pole and a ground terminal, the PIN optical detection chip comprises a photodiode, a first resistor and a second resistor, the positive pole of the photodiode is electrically connected with the electrical signal output port, one end of the first resistor is electrically connected with the positive pole of the photodiode, the other end of the first resistor is electrically connected with the ground terminal, one end of the second resistor is electrically connected with the negative pole of the photodiode, the other end of the second resistor is electrically connected with the power supply input port positive pole, one end of the first capacitor is electrically connected with the power supply input port positive pole, the other end of the first capacitor is electrically connected with the ground terminal;

[0030] In step 6, the direct current and high frequency combining unit for combining and outputting the direct current voltage signal amplified by the current and the amplified high frequency signal comprises a third inductor, a fourth capacitor, an amplified high frequency signal input port, a current amplified direct current voltage signal input port and a combined signal output port, one end of the fourth capacitor is electrically connected with the amplified high frequency signal input port, the other end of the fourth capacitor is electrically connected with the combined signal output port, one end of the third inductor is electrically connected with the current amplified direct current voltage signal input port, the other end of the third inductor is electrically connected with one end of a fifth resistor, the other end of the fifth resistor is electrically connected with the combined signal output port.

[0031] The step 1 adopts a PIN type photoelectric detector to detect an optical signal and convert the detected optical signal into an electrical signal.

[0032] The step 3 adopts a current detection chip or a differential amplification circuit to convert a direct current signal into a direct current voltage signal, and adopts an operational amplification circuit to amplify the converted direct current voltage signal.

[0033] Compared with the prior art, the present application has the following beneficial technical effects:

[0034] The present application firstly uses an innovative direct current and high frequency separating unit, the direct current part path still uses an operational amplifier and a driving circuit signal for amplification, the amplification multiple of the operational amplifier, i.e. the gain, can be adjusted according to the amplification multiple of the high frequency, to ensure the amplitude flatness in the full frequency domain; the high frequency part path introduces a GaAs material type high frequency amplifier or a microwave amplifier to amplify the high frequency signal, and a direct current and high frequency combining circuit is used at the output end to completely restore and output the signal. The present application greatly improves the speed and bandwidth of the photoelectric detection and signal processing, has small distortion, flat in-band fluctuation, is easy to realize, and greatly expands the application field. BRIEF DESCRIPTION OF DRAWINGS

[0035] Figure 1 It is a schematic diagram of the principle structure of the circuit of the present application;

[0036] Figure 2 A typical detector circuit structure diagram of the light detection conversion unit of the present application;

[0037] Figure 3 A direct current high frequency separation circuit structure diagram of the direct current high frequency separation unit of the present application;

[0038] Figure 4 A current-to-voltage conversion and direct current voltage amplification circuit structure diagram of the current-to-voltage conversion and direct current voltage amplification unit of the present application;

[0039] Figure 5 A direct current driving circuit structure diagram of the direct current driving unit of the present application;

[0040] Figure 6 A high frequency amplification circuit structure diagram of the high frequency amplification unit of the present application;

[0041] Figure 7 A direct current high frequency combination circuit structure diagram of the direct current high frequency combination unit of the present application;

[0042] Figure 8 A gain curve diagram of the measured data of the present application;

[0043] Figure 9 A structure diagram of the connection of the test equipment used in the measured data of the present application.

[0044] Meaning of the reference numerals in the drawings: 1 - light detection conversion unit, 2 - direct current high frequency separation unit, 3 - current-to-voltage conversion and direct current voltage amplification unit, 4 - direct current driving unit, 5 - high frequency amplification unit, 6 - direct current high frequency combination unit, 7 - vector network analyzer, 8 - laser light source, 9 - short optical fiber, 10 - circuit device for ultra-wideband optical signal detection and amplification, C1 - first capacitor, C2 - second capacitor, C3 - third capacitor, C4 - fourth capacitor, D1 - current detection chip, D2 - operational amplifier circuit, D3 - radio frequency amplifier or microwave amplifier prepared by using GaAs process, L1 - first inductor, L2 - second inductor, L3 - third inductor, M - MOS tube, P1 - light input port, P2 - electrical signal output port, P3 - positive power supply input port, P4 - electrical signal input port, P5 - direct current signal output port, P6 - high frequency signal output port, P7 - input port of amplified direct current voltage signal, P8 - output port of direct current voltage signal after current amplification, P9 - input port of amplified high frequency signal, P10 - input port of direct current voltage signal after current amplification, P11 - combined signal output port, P12 - feedback interface, R1 - first resistor, R2 - second resistor, R3 - third resistor, R4 - fourth resistor, R5 - fifth resistor, PD - photodiode. DETAILED DESCRIPTION

[0045] All features disclosed in this specification, and / or all steps of any methods or processes disclosed in this specification, may be combined in any combination, unless the context explicitly indicates otherwise, and all combinations of features and / or steps are specifically contemplated, even if not explicitly stated in or described in the specification, unless the context explicitly indicates otherwise. In addition, any feature or step of any embodiment of the present application can be excluded from any embodiment of the application, even if the context explicitly indicates otherwise, and any embodiment of the application can be made without any feature or step of any embodiment of the present application, even if the context explicitly indicates otherwise.

[0046] The ultra-wideband optical signal referred to in the present application can be an optical modulation signal, and the optical wave is mainly used as a carrier wave, and the modulation signal can include but is not limited to square wave signals, narrow pulse signals, sine waves, etc. The ultra-wideband refers to the frequency range of the modulation signal from 0 Hz to 20 GHz, or even higher.

[0047] Embodiment 1

[0048] Referring to Figure 1 , one of the many embodiments of the present application for ultra-wideband optical signal detection and amplification circuit device 10, including optical detection conversion unit 1, DC high frequency separation unit 2, current to voltage and DC voltage amplification unit 3, DC drive unit 4, high frequency amplification unit 5, DC high frequency combination unit 6.

[0049] The optical detection conversion unit 1 is used to detect the optical signal and convert the detected optical signal into an electrical signal. The optical detection conversion unit 1 can use a mature PIN photodetector (PD) process to realize the conversion of the optical signal to the electrical signal, thereby obtaining a weak electrical signal containing ultra-wideband information, which contains DC components and high frequency components. A typical detector circuit of the optical detection conversion unit 1 is shown in Figure 2 The optical detection conversion unit 1 includes a PIN photodetector chip, a first capacitor C1, an optical input port P1, an electrical signal output port P2, a positive power supply input port P3, and a ground terminal GND. The PIN photodetector chip includes a photodiode PD, a first resistor R1, and a second resistor R2. The positive electrode of the photodiode PD is electrically connected to the electrical signal output port P2. One end of the first resistor R1 is electrically connected to the positive electrode of the photodiode PD, and the other end of the first resistor R1 is electrically connected to the ground terminal GND. One end of the second resistor R2 is electrically connected to the negative electrode of the photodiode PD, and the other end of the second resistor R2 is electrically connected to the positive power supply input port P3. One end of the first capacitor C1 is electrically connected to the positive power supply input port P3, and the other end of the first capacitor C1 is electrically connected to the ground terminal GND. The second resistor R2 is a bias resistor for the operation of the photodiode PD, and its resistance is relatively small, less than 50 ohms, which does not affect the response bandwidth of the photodiode PD, and the maximum bandwidth can exceed 20 GHz.

[0050] The direct current high frequency separation unit 2 is used for separating the electric signal into direct current signal and high frequency signal. The direct current high frequency separation unit 2 mainly realizes the automatic separation function of the direct current component, i.e. the direct current signal, and the high frequency component, i.e. the high frequency signal, in the ultra-wideband electric signal. The roughly realized principle block diagram of the direct current high frequency separation unit 2 is shown in Figure 3 The direct current high frequency separation unit 2 comprises an electric signal input port P4, a direct current signal output port P5, a high frequency signal output port P6, a first inductor L1 and a second capacitor C2. One end of the first inductor L1 is electrically connected with the electric signal input port P4, the other end of the first inductor L1 is electrically connected with the direct current signal output port P5, one end of the second capacitor C2 is electrically connected with the electric signal input port P4, the other end of the second capacitor C2 is electrically connected with the high frequency signal output port P6. The first inductor L1 mainly realizes the sufficient coupling of the direct current signal and simultaneously isolates the high frequency signal; the second capacitor C2 mainly realizes the coupling of the alternating current signal and simultaneously isolates the direct current signal. The automatic separation of the direct current component and the high frequency component in the ultra-wideband electric signal is realized through the circuit.

[0051] The current to voltage and direct current voltage amplification unit 3 is used for converting the direct current signal into direct current voltage signal and amplifying the converted direct current voltage signal. The current to voltage and direct current voltage amplification unit 3 firstly adopts a current detection chip D1 to convert the direct current signal (current) into direct current voltage signal, and then amplifies the converted direct current voltage signal through a gain adjustable operational amplifier circuit D2. The gain size is adjusted according to the size of the high frequency gain, and the best is that the gains of the two are equal or close. The roughly principle block diagram is shown in Figure 4 The current detection chip D1 can also adopt a differential amplifier circuit to differentially amplify the direct current component, so as to convert the direct current signal into direct current voltage signal output. Since the differential amplifier circuit is a classical analog general circuit, it is not described here.

[0052] The current detection chip D1 can be but not limited to the SGM8199A2XC6G integrated product of the domestic Shengbang Microelectronics Company or other similar current detection integrated chip. The operational amplifier D2 can be but not limited to the LM2904 and other similar operational amplifiers of the domestic Shengbang Microelectronics Company.

[0053] The direct current driving unit 4 is used for amplifying the driving current of the amplified direct current voltage signal. Considering that the output direct current voltage signal current of the operational amplifier D2 is small and the load capacity is low, the direct current driving unit 4 adds a MOS tube M as a driver, which can increase the driving capacity of the direct current part. The roughly circuit is shown in Figure 5The direct current driving unit 4 includes a MOS tube M, a third resistor R3, a fourth resistor R4, and a feedback interface P12. The feedback interface P12 is electrically connected to one end of a feedback resistor of an operational amplifier D2. The gate of the MOS tube M is electrically connected to one end of the third resistor R3. The other end of the third resistor R3 is electrically connected to an input port P7 of the amplified direct current voltage signal. The source of the MOS tube M is electrically connected to one end of the fourth resistor R4 and the feedback interface P12. The other end of the third resistor R3 is electrically connected to an output port P8 of the current-amplified direct current voltage signal. The drain of the MOS tube M is electrically connected to the positive pole Vcc of the power supply. The selection of the MOS tube M mainly considers the power supply voltage and the maximum current index, and many models can be selected. The specific model is not specified here. The existence of the direct current driving unit can provide a large driving current (which can exceed the level of hundreds of milliamperes) even if the load resistor is large.

[0054] The high-frequency amplification unit 5 is used for amplifying high-frequency signals. The high-frequency amplification unit 5 is mainly responsible for amplifying optical high-frequency signals. Since the frequency of the high-frequency path here can cover a very wide frequency range from several KHz to 20 GHz, a radio frequency amplifier or microwave amplifier D3 prepared by using a gallium arsenide (GaAs) process is required to be used here at the same time. The power supply biasing part of the amplifier also needs to be processed in the same wideband manner. The approximate principle block diagram is shown in Figure 6 The high-frequency amplification unit 5 includes a radio frequency amplifier or microwave amplifier D3 prepared by using a gallium arsenide (GaAs) process, a second inductor L2, and a third capacitor C3. One end of the second inductor L2 is electrically connected to the output port of the radio frequency amplifier or microwave amplifier D3. The other end of the second inductor L2 is electrically connected to the positive pole Vcc of the power supply. One end of the third capacitor C3 is electrically connected to the positive pole Vcc of the power supply. The other end of the third capacitor C3 is grounded. The third capacitor C3 is a decoupling capacitor.

[0055] The direct current high-frequency combining unit 6 is used for combining and outputting the current-amplified direct current voltage signal and the amplified high-frequency signal. Referring to Figure 7The direct current high frequency combination unit 6 includes a third inductor L3, a fourth capacitor C4, an amplified high frequency signal input port P9, a current amplified direct current voltage signal input port P10, and a combination signal output port P11. One end of the fourth capacitor C4 is electrically connected to the amplified high frequency signal input port P9, the other end of the fourth capacitor C4 is electrically connected to the combination signal output port P11, one end of the third inductor L3 is electrically connected to the current amplified direct current voltage signal input port P10, the other end of the third inductor L3 is electrically connected to one end of a fifth resistor R5, and the other end of the fifth resistor R5 is electrically connected to the combination signal output port P11. The third inductor L3 mainly realizes the coupling of direct current and isolates high frequency components, and the fifth resistor R5 mainly isolates low frequency components (excluding direct current). The fourth capacitor C4 mainly realizes the coupling of alternating current components and isolates direct current. The current amplified direct current voltage signal and the amplified high frequency signal in the super wideband electrical signal are automatically combined through the circuit. It can be seen that the series combination of the third inductor L3 and the fifth resistor R5 and the common use of the fourth capacitor C4 (the fourth capacitor C4 is a direct current isolation capacitor) can realize the super wideband combination from DC to several tens of KHz (direct current path) and several tens of KHz to 20GHz (high frequency path), thereby ensuring the integrity of signal transmission.

[0056] Embodiment 2

[0057] A method for super wideband optical signal detection and amplification provided by the present application comprises the following steps:

[0058] Step 1, detecting an optical signal and converting the detected optical signal into an electrical signal;

[0059] Step 2, separating the electrical signal into a direct current signal and a high frequency signal;

[0060] Step 3, converting the direct current signal into a direct current voltage signal and amplifying the converted direct current voltage signal;

[0061] Step 4, amplifying the driving current of the amplified direct current voltage signal;

[0062] Step 5, amplifying the high frequency signal by using a radio frequency amplifier or a microwave amplifier prepared by a gallium arsenide (GaAs) process;

[0063] Step 6, combining and outputting the current amplified direct current voltage signal and the amplified high frequency signal.

[0064] In some embodiments, step 1 uses a PIN type photodetector to detect an optical signal and convert the detected optical signal into an electrical signal.

[0065] In some embodiments, step 3 uses a current detection chip or a differential amplifier circuit to convert the DC signal into a DC voltage signal, and uses an operational amplifier circuit to amplify the converted DC voltage signal.

[0066] By combining the above circuit units and designing a specific circuit, it is possible to perform the function of detecting and amplifying ultra-wideband weak optical signals from DC to 20GHz.

[0067] To verify and test the effectiveness of the present invention, such as Figure 9 As shown, a vector network analyzer 7 with a bandwidth ≥ 20 GHz was used for testing. After calibration, one port of the vector network analyzer 7 emitted a first radio frequency signal with a bandwidth of 20 GHz. The first radio frequency signal (sine wave signal) emitted by the vector network analyzer 7 was input from the radio frequency port of the laser source 8 with a modulation bandwidth ≥ 20 GHz. The optical port of the laser source 8 output a modulated optical signal. This modulated optical signal was emitted through a 1-meter-long short optical fiber 9 and fed into the optical input port P1 (i.e., the optical port of the PIN photodetector) of the circuit device 10 of the present invention. After being processed by the circuit device 10 of the present invention, a second radio frequency signal with a bandwidth ≥ 20 GHz was output from the radio frequency port of the circuit device 10 of the present invention. The whole process completed the transmission process of the useful 20 GHz bandwidth radio frequency signal from electricity to light, then from light to electricity, and then electrical amplification. The aforementioned second radio frequency signal was input through another port of the vector network analyzer 7. At this time, the gain curve (S21 curve) tested by the vector network analyzer 7 can be used to evaluate whether the circuit and method of the present invention can achieve the effect of detecting and amplifying the modulated optical signal with a bandwidth of 20 GHz across the entire frequency band.

[0068] The measured bandwidth data of the optical transmission system implemented by this invention are as follows: Figure 8 As shown, the present invention can perform the function of detecting and amplifying ultra-wideband weak optical signals from DC to 20GHz.

[0069] The advantages of this invention are as follows:

[0070] 1) The circuits of this invention use lumped parameter components, which are convenient to select and have relatively low cost.

[0071] 2) By introducing gallium arsenide (GaAs) radio frequency amplifiers or microwave amplifiers and PIN photodetectors, this invention can realize the detection and amplification process of ultra-wideband optical signals from DC to 20GHz, breaking through the bandwidth bottleneck in the traditional field of optical detection and amplification.

[0072] 3) This invention makes it possible to detect and amplify high-speed, high-bandwidth optical signals, greatly expanding the application fields and scope of optoelectronic technology, and has very important practical value.

[0073] The above merely illustrates the preferred embodiments of the present application, and is not intended to limit the present application in any form. Any simple modification or equivalent change of the above embodiments according to the technical essence of the present application shall fall within the protection scope of the present application.

Claims

1. A circuit arrangement for ultra-wideband optical signal probing and amplification, characterized by The application relates to a light detection and conversion unit for detecting a light signal and converting the detected light signal into an electric signal; a direct-current high-frequency separation unit for separating the electric signal into a direct-current signal and a high-frequency signal; a current-to-voltage and direct-current voltage amplification unit for converting the direct-current signal into a direct-current voltage signal and amplifying the converted direct-current voltage signal; a direct-current driving unit for amplifying a driving current of the amplified direct-current voltage signal; a high-frequency amplification unit for amplifying the high-frequency signal; and a direct-current high-frequency combination unit for combining and outputting the current-amplified direct-current voltage signal and the amplified high-frequency signal. The high-frequency amplification unit is a radio frequency amplifier or a microwave amplifier prepared by using a gallium arsenide process; and the amplification multiple of the current-to-voltage and direct-current voltage amplification unit for the direct-current voltage signal is adjusted to be aligned with the amplification multiple of the high-frequency signal. The light detection and conversion unit comprises a PIN light detection chip, a first capacitor, a light input port, an electric signal output port, a power supply input port positive electrode and a grounding terminal; the PIN light detection chip comprises a photodiode, a first resistor and a second resistor; the positive electrode of the photodiode is electrically connected with the electric signal output port; one end of the first resistor is electrically connected with the positive electrode of the photodiode; the other end of the first resistor is electrically connected with the grounding terminal; one end of the second resistor is electrically connected with the negative electrode of the photodiode; the other end of the second resistor is electrically connected with the power supply input port positive electrode; one end of the first capacitor is electrically connected with the power supply input port positive electrode; and the other end of the first capacitor is electrically connected with the grounding terminal. The direct-current high-frequency combination unit comprises a third inductor, a fourth capacitor, an amplified high-frequency signal input port, a current-amplified direct-current voltage signal input port and a combined signal output port; one end of the fourth capacitor is electrically connected with the amplified high-frequency signal input port; the other end of the fourth capacitor is electrically connected with the combined signal output port; one end of the third inductor is electrically connected with the current-amplified direct-current voltage signal input port; the other end of the third inductor is electrically connected with one end of a fifth resistor; and the other end of the fifth resistor is electrically connected with the combined signal output port. The light detection and conversion unit is a PIN type photoelectric detector. The direct-current amplification unit comprises a current detection chip or a differential amplification circuit for converting the direct-current signal into a direct-current voltage signal; and an operational amplification circuit for amplifying the converted direct-current voltage signal. The operational amplification circuit is a gain-adjustable operational amplification circuit. The application further discloses a method for detecting a light signal and converting the detected light signal into an electric signal, which comprises the following steps: Step 1: detecting a light signal and converting the detected light signal into an electric signal; Step 2: separating the electric signal into a direct-current signal and a high-frequency signal; 2. The circuit arrangement for the detection and amplification of ultra-wideband optical signals according to claim 1, characterized in that Step 3: converting the direct-current signal into a direct-current voltage signal and amplifying the converted direct-current voltage signal; 3. The circuit arrangement for ultra-wideband optical signal detection and amplification according to claim 1, characterized in that, Step 4: amplifying a driving current of the amplified direct-current voltage signal; Step 5: amplifying the high-frequency signal by using a radio frequency amplifier or a microwave amplifier prepared by using a gallium arsenide process; Step 6: combining and outputting the current-amplified direct-current voltage signal and the amplified high-frequency signal.

4. The circuit arrangement for ultra-wideband optical signal detection and amplification according to claim 3, characterized in that ​ 5. A method for ultra-wideband optical signal probing and amplification, characterized by, ​ ​ ​ ​ ​ ​ ​ In step 1, the optical detection and conversion unit for detecting the optical signal and converting the detected optical signal into an electrical signal comprises a PIN optical detection chip, a first capacitor, an optical input port, an electrical signal output port, a power supply input port positive pole and a ground terminal, the PIN optical detection chip comprises a photodiode, a first resistor and a second resistor, the positive pole of the photodiode is electrically connected with the electrical signal output port, one end of the first resistor is electrically connected with the positive pole of the photodiode, the other end of the first resistor is electrically connected with the ground terminal, one end of the second resistor is electrically connected with the negative pole of the photodiode, the other end of the second resistor is electrically connected with the power supply input port positive pole, one end of the first capacitor is electrically connected with the power supply input port positive pole, the other end of the first capacitor is electrically connected with the ground terminal; In step 6, the direct current high frequency combining unit for combining and outputting the current-amplified direct current voltage signal and the amplified high frequency signal comprises a third inductor, a fourth capacitor, an amplified high frequency signal input port, a current-amplified direct current voltage signal input port and a combined signal output port, one end of the fourth capacitor is electrically connected with the amplified high frequency signal input port, the other end of the fourth capacitor is electrically connected with the combined signal output port, one end of the third inductor is electrically connected with the current-amplified direct current voltage signal input port, the other end of the third inductor is electrically connected with one end of a fifth resistor, the other end of the fifth resistor is electrically connected with the combined signal output port; The step further comprises a step of adjusting and aligning the amplification multiple of the direct current voltage signal according to the amplification multiple of the high frequency signal.

6. The method for ultra-wideband optical signal detection and amplification according to claim 5, wherein, In step 1, the PIN optical detector is used to detect the optical signal and convert the detected optical signal into an electrical signal.

7. The method for ultra-wideband optical signal detection and amplification according to claim 5, wherein, In step 3, the current detection chip or the differential amplification circuit is used to convert the direct current signal into a direct current voltage signal, and the operational amplification circuit is used to amplify the converted direct current voltage signal.

8. The method for ultra-wideband optical signal detection and amplification according to claim 7, wherein, The operational amplification circuit is a gain-adjustable operational amplification circuit.

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